Magnetic focusing transmission-type pulse laser deposition method and device

Abstract

The invention provides a magnetic focusing transmission-type pulse laser deposition method and device, and the method comprises the following steps: obtaining a corresponding relation between a laser-induced plasma plume sputtering process and a magnetic field property; designing a magnetic lens according to the corresponding relation; a transparent deposition substrate and a target material are fixed in the magnetic lens, the transparent deposition substrate is arranged right above the target material in parallel, a certain distance is formed between the transparent deposition substrate and the target material, and the deposition device is arranged in the atmospheric environment; the electromagnetic lens applies a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate; pulse laser vertically enters along the central axis of the magnetic lens and penetrates through the transparent deposition substrate to vertically bombard the target material to induce generation of plasma plume; and under the action of a magnetic field of the electromagnetic lens, the plasma plume is focused in the sputtering process and then upwards deposited on the transparent deposition substrate, and a two-dimensional patterned material structure is obtained through laser scanning. The problems that in an existing pulse laser deposition technology, the material deposition area is large and uncontrollable, and a two-dimensional patterned structure is difficult to achieve are solved.

Description

Technical Field

[0001] The present invention relates to the field of micro-nano manufacturing technology, and in particular to a magnetic focusing transmission pulse laser deposition method and device. Background Art

[0002] In the field of thin film preparation, pulsed laser deposition (PLD) technology has attracted much attention due to its ability to prepare high-quality, compositionally controllable thin films.

[0003] However, traditional PLD technology has some limitations, and the deposition patterning accuracy is difficult to precisely control, which limits its application in certain application scenarios that require high deposition accuracy.

[0004] The deposition accuracy directly affects its physical and chemical properties, such as optical properties, electrical properties, mechanical properties, and chemical stability. In the fields of optoelectronic devices, sensors, catalysts, etc., there are strict requirements on the accuracy of deposition.

[0005] Therefore, it is necessary to improve the existing pulsed laser deposition technology to overcome the defects of the existing technology. Summary of the invention

[0006] In order to overcome the problems existing in the related art, one of the objects of the present invention is to provide a magnetic focusing transmission pulsed laser deposition method. The magnetic focusing transmission pulsed laser deposition method obtains the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties, and uses a magnetic lens to actively control the deposition accuracy of the laser sputtering plasma plume during the pulsed laser deposition process, so as to overcome the problems of the existing pulsed laser deposition technology such as large material deposition area, uncontrollable material deposition area, and difficulty in achieving two-dimensional patterned structure.

[0007] A magnetic focusing transmission pulsed laser deposition method comprises the following steps:

[0008] Obtain the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties;

[0009] Design a magnetic lens according to the corresponding relationship;

[0010] A magnetic focusing transmission pulse laser deposition device is designed. A transparent deposition substrate and a target are fixed inside a magnetic lens. The transparent deposition substrate is placed parallel to and directly above the target and at a certain distance from the target. Both the transparent deposition substrate and the target are perpendicular to the central axis of the magnetic lens. The deposition device is placed in the atmosphere as a whole.

[0011] Applying a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate through an electromagnetic lens;

[0012] The pulsed laser is incident vertically along the central axis of the magnetic lens and vertically bombards the target through the transparent deposition substrate, inducing the generation of plasma plume;

[0013] Under the action of the magnetic field of the electromagnetic lens, the plasma plume is focused during the sputtering process and then deposited upward onto the transparent deposition substrate, and a two-dimensional patterned material structure is obtained by laser scanning.

[0014] Furthermore, the corresponding relationship between the laser-induced plasma plume sputtering process and the magnetic field properties is obtained, including:

[0015] Under different magnetic field properties, a pulsed laser is used to bombard the target material through a transparent deposition substrate, and a two-dimensional patterned material structure is obtained by deposition on the transparent deposition substrate and laser scanning;

[0016] Measure the sediment line width of laser single line scanning under different magnetic field properties;

[0017] Based on the measured line width of the laser single-line scanning deposit, the corresponding relationship between the laser-induced plasma plume sputtering process and the magnetic field properties is established.

[0018] By measuring the line width of the deposits scanned by a single laser line under different magnetic field properties, the corresponding relationship between the laser-induced plasma plume sputtering process and the magnetic field properties was established, which provides a theoretical basis for the design of the magnetic lens. The magnetic field parameters can be accurately controlled according to the line width of the target deposits, thereby achieving precise control of the deposition process.

[0019] Furthermore, the measurement of the line width of the deposits scanned by a single laser line under different magnetic field properties is performed by observation using an electron microscope or an atomic force microscope.

[0020] Using an electron microscope or an atomic force microscope to observe the sediment line width can achieve nanometer-level precision measurement, further improving the accuracy of the correspondence between the magnetic field parameters and the sediment line width, thereby better guiding the design of the magnetic lens and the optimization of the magnetic field parameters.

[0021] Furthermore, designing a magnetic lens according to the corresponding relationship includes:

[0022] According to the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties, the magnetic field properties corresponding to the single line width and thickness of the target deposit are determined;

[0023] The magnetic lens is designed according to the magnetic field properties corresponding to the single line width and thickness of the target sediment.

[0024] The magnetic field properties include magnetic field strength and magnetic flux lines distribution.

[0025] By determining the magnetic field properties corresponding to the single-line width and thickness of the target sediment and designing the magnetic lens based on this, it is possible to achieve precise control of the sediment morphology and size, obtain sediments with specific line width and thickness, and meet the needs of different application scenarios. Clarifying the magnetic field properties, including magnetic field intensity and magnetic flux line distribution, makes the design of the magnetic lens more specific and operational.

[0026] Furthermore, during the process of pulse laser bombarding the target material, the deposition rate of the plasma plume is measured in real time, and the magnetic field properties of the magnetic lens are adjusted in real time according to the deposition rate.

[0027] By measuring the deposition rate of the plasma plume in real time and adjusting the magnetic field properties of the magnetic lens accordingly, dynamic control of the deposition process is achieved. This can effectively compensate for changes in deposition rate caused by factors such as target material consumption and environmental fluctuations, ensure the stability and consistency of the deposition process, and improve deposition quality.

[0028] Furthermore, the pulse laser is a femtosecond laser.

[0029] The use of femtosecond laser as the pulse laser source can achieve finer material removal and lower thermal effects due to its ultrashort pulse width and high peak power, thereby improving the quality and accuracy of the deposits and expanding the range of depositable materials.

[0030] Furthermore, the pulse width of the femtosecond laser is 350fs to 10ps, the pulse repetition frequency is 1MHz to 50MHz, and the pulse energy is 10μJ to 80μJ.

[0031] The ranges of femtosecond laser pulse width, pulse repetition frequency and pulse energy are limited, and the deposition process parameters are further optimized, which provides more specific guidance for obtaining high-quality deposits and is beneficial to the stability and repeatability of the deposition process.

[0032] Furthermore, the distance between the target and the transparent deposition substrate is 0.1 mm to 10 mm.

[0033] The distance between the target material and the transparent deposition substrate is limited, which optimizes the plasma plume transmission and focusing effect during the deposition process, and is conducive to controlling the thickness and uniformity of the deposit.

[0034] The second object of the present invention is to provide a magnetic focusing transmission type pulsed laser deposition device for implementing the magnetic focusing transmission type pulsed laser deposition method as described above, comprising:

[0035] A laser, used for emitting the pulsed laser;

[0036] A transparent deposition substrate, used for transmitting the pulse laser and depositing the plasma plume;

[0037] A magnetic lens, used to generate a magnetic field between the target and the transparent deposition substrate;

[0038] A controller is used to control the working states of the laser and the magnetic field generating device.

[0039] Furthermore, it also includes a deposition rate measuring device for measuring the deposition rate of the plasma plume in real time, and the deposition rate measuring device is electrically connected to the controller.

[0040] Since the deposition substrate and the target are located in the central area of ​​the magnetic lens and the distance between them is small, it can be considered that the deposition substrate and the target are located in a uniform magnetic field.

[0041] By adding a deposition rate measuring device to the device and connecting it to the controller, real-time monitoring and feedback control of the deposition rate are achieved, which can further improve the uniformity and accuracy of the deposits and enhance the automation and intelligence level of the device.

[0042] Furthermore, the deposition rate measuring device is a quartz crystal microbalance.

[0043] Furthermore, the deposition rate measuring device is integrated on the magnetic focusing transmission pulse laser deposition device.

[0044] The beneficial effects of the present invention are:

[0045] The present invention provides a magnetic focusing transmission pulsed laser deposition method. The magnetic focusing transmission pulsed laser deposition method obtains the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties, and uses a magnetic lens to actively control the deposition accuracy of the laser sputtering plasma plume during the pulsed laser deposition process, so as to overcome the problems of the existing pulsed laser deposition technology such as large material deposition area, uncontrollable material deposition area, and difficulty in achieving two-dimensional patterned structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1 It is a schematic diagram of the process of the magnetic focusing transmission pulsed laser deposition method provided in this application;

[0047] Figure 2 It is an observation diagram of patterned deposits corresponding to different magnetic field intensities under an optical microscope in Example 1 provided in the present application;

[0048] Figure 3 It is an observation diagram of patterned deposits corresponding to different magnetic field intensities under a scanning electron microscope in Example 1 provided in the present application;

[0049] Figure 4 is a schematic diagram of the patterned Cs4PbBr6 deposit obtained in Example 1 provided in the present application;

[0050] Figure 5 It is an observation diagram of patterned deposits corresponding to different magnetic field intensities under an optical microscope in Example 2 provided in the present application;

[0051] Figure 6 is a deposition thickness observation diagram of the deposits of 0Gs and 310Gs under an atomic force microscope (AFM) in Example 2 provided in the present application;

[0052] Figure 7 It is an image of a patterned deposit obtained under the conditions of 0Gs and 771Gs obtained in Example 2 provided in the present application. DETAILED DESCRIPTION

[0053] The preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the preferred embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to make the present invention more thorough and complete, and to fully convey the scope of the present invention to those skilled in the art.

[0054] Example 1

[0055] like Figures 1 to 7 As shown, this embodiment provides a magnetic focusing transmission pulsed laser deposition method, which includes the following steps:

[0056] Step 100, obtaining a correspondence between a laser-induced plasma plume sputtering process and a magnetic field property;

[0057] Step 200, designing a magnetic lens according to the corresponding relationship;

[0058] Step 300, designing a magnetic focusing transmission pulse laser deposition device, fixing a transparent deposition substrate and a target material inside a magnetic lens, placing the transparent deposition substrate parallel to and above the target material and at a certain distance therefrom, the transparent deposition substrate and the target material are both perpendicular to the central axis of the magnetic lens, and placing the deposition device as a whole in an atmospheric environment;

[0059] Step 400, applying a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate through an electromagnetic lens;

[0060] Step 500, a pulsed laser is incident vertically along the central axis of the magnetic lens and vertically bombards the target material through the transparent deposition substrate to induce the generation of a plasma plume;

[0061] Step 600: Under the action of the magnetic field of the electromagnetic lens, the plasma plume is focused during the sputtering process and then deposited upward on the transparent deposition substrate, and a two-dimensional patterned material structure is obtained by laser scanning.

[0062] In step 100, the obtaining of the correspondence between the laser induced plasma plume sputtering process and the magnetic field property includes:

[0063] Step 110, using a pulsed laser to bombard the target material through a transparent deposition substrate under different magnetic field properties, depositing on the transparent deposition substrate and obtaining a two-dimensional patterned material structure by laser scanning;

[0064] Step 120, measuring the sediment line width of the laser single line scan under different magnetic field properties;

[0065] Step 130 , establishing a corresponding relationship between the laser induced plasma plume sputtering process and the magnetic field property according to the measured line width of the laser single line scanning deposit.

[0066] In step 120, the line width of the deposits scanned by a single laser line under different magnetic field properties is measured by observation using an electron microscope and / or an atomic force microscope.

[0067] In step 200, designing a magnetic lens according to the corresponding relationship includes:

[0068] Step 210, determining the magnetic field properties corresponding to the single line width and thickness of the target deposit according to the correspondence between the laser induced plasma plume sputtering process and the magnetic field properties;

[0069] Step 220 , designing a magnetic lens according to the magnetic field properties corresponding to the single line width and thickness of the target deposit.

[0070] The magnetic field properties include magnetic field strength and magnetic flux lines distribution.

[0071] In step 600, during the process of the pulse laser bombarding the target material, the deposition rate of the plasma plume is measured in real time, and the magnetic field properties of the magnetic lens are adjusted in real time according to the deposition rate.

[0072] The pulse laser is a femtosecond laser.

[0073] The femtosecond laser has a pulse width of 350 fs to 10 ps, ​​a pulse repetition frequency of 1 MHz to 50 MHz, and a pulse energy of 10 μJ to 80 μJ.

[0074] The distance between the target and the transparent deposition substrate is 0.1 mm to 10 mm.

[0075] This embodiment also provides a magnetic focusing transmission type pulsed laser deposition device, which is used to implement the magnetic focusing transmission type pulsed laser deposition method as described above, including:

[0076] A laser, used for emitting the pulsed laser;

[0077] A transparent deposition substrate, used for transmitting the pulse laser and depositing the plasma plume;

[0078] A magnetic lens, used to generate a magnetic field between the target and the transparent deposition substrate;

[0079] A controller is used to control the working states of the laser and the magnetic field generating device.

[0080] The device also comprises a deposition rate measuring device for measuring the deposition rate of the plasma plume in real time, and the deposition rate measuring device is electrically connected to the controller.

[0081] Specifically, in this embodiment, the deposition rate measuring device is a quartz crystal microbalance.

[0082] More specifically, the magnetic lens includes an energized solenoid.

[0083] In this embodiment, the method is used to prepare a high-precision Cs4PbBr6 patterned deposit, including the following steps:

[0084] Step 1: Obtain the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties:

[0085] Use Cs4PbBr6 quantum dot pressed target and quartz glass deposition substrate.

[0086] The transparent deposition substrate and the target material are fixed inside the magnetic lens. The transparent deposition substrate is placed parallel to and just above the target material and is spaced a certain distance from the target material. Both the transparent deposition substrate and the target material are perpendicular to the central axis of the magnetic lens. The deposition device as a whole is placed in an atmospheric environment.

[0087] A femtosecond laser (pulse width 500 fs, repetition rate 20 MHz, pulse energy 50 μJ) was used to bombard the target through the quartz glass deposition substrate.

[0088] The uniform magnetic field strength generated by the magnetic field generating device was changed (310Gs, 771Gs, 1237Gs, 1545Gs).

[0089] Square Cs4PbBr6 deposits of 8 mm × 8 mm with a gap of 50 μm were deposited at each magnetic field strength.

[0090] like Figure 2 As shown, the sediments obtained under different magnetic field strengths were observed under an optical microscope. Figure 3In order to use scanning electron microscopy (SEM) to observe the deposition line width of each deposit, it is obvious that when the magnetic field intensity is 771Gs, the deposition spacing of Cs4PbBr6 quantum dots is obvious, the deposition line density is high, and the deposition line width is smaller. According to the measured laser single-line scanning deposition line width, the corresponding relationship between the laser induced plasma plume sputtering process and the magnetic field properties is established, and the relationship curve is fitted.

[0091] Step 2: Design the magnetic lens according to the magnetic field properties corresponding to the single line width and thickness of the target sediment:

[0092] The goal is to prepare a patterned Cs4PbBr6 deposit with low line width and high definition. According to the relationship curve obtained in step 1, the magnetic field strength corresponding to the minimum deposit line width is selected.

[0093] Step 3: Preparation of dense and clear patterned Cs4PbBr6 deposits:

[0094] The fixing bracket and the quartz glass deposition substrate are placed in the magnetic lens.

[0095] Place the Cs4PbBr6 target on a fixed bracket.

[0096] The distance between the target and the quartz glass deposition substrate was adjusted to 5 mm.

[0097] Start the magnetic lens and set the magnetic field strength to 771Gs.

[0098] Start the femtosecond laser to bombard the target through the quartz glass deposition substrate.

[0099] The deposition rate is monitored in real time, and the magnetic field strength is fine-tuned according to the deposition rate to maintain a stable deposition rate.

[0100] After the deposition is completed, the Figure 4 High-precision patterned Cs4PbBr6 deposition shown.

[0101] The magnetic focusing transmission pulsed laser deposition method and device provided in this embodiment can specifically select the optimal magnetic field properties for preparing high-precision patterned Cs4PbBr6 deposits by obtaining the corresponding relationship between the laser-induced plasma plume sputtering process and the magnetic field properties. In addition, by real-time monitoring of the deposition rate and feedback control of the magnetic field intensity, the fluctuations that may occur during the experiment are dynamically compensated to ensure the stability of the deposition process, and finally a uniform, high-precision patterned Cs4PbBr6 deposit is obtained, which significantly improves the controllability, consistency and preparation efficiency of the patterned deposition accuracy.

[0102] Example 2

[0103] like Figures 1 to 7As shown, this embodiment provides a magnetic focusing transmission pulsed laser deposition method, which includes the following steps:

[0104] Step 100, obtaining a correspondence between a laser-induced plasma plume sputtering process and a magnetic field property;

[0105] Step 200, designing a magnetic lens according to the corresponding relationship;

[0106] Step 300, designing a magnetic focusing transmission pulse laser deposition device, fixing a transparent deposition substrate and a target material inside a magnetic lens, placing the transparent deposition substrate parallel to and above the target material and at a certain distance therefrom, the transparent deposition substrate and the target material are both perpendicular to the central axis of the magnetic lens, and placing the deposition device as a whole in an atmospheric environment;

[0107] Step 400, applying a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate through an electromagnetic lens;

[0108] Step 500, a pulsed laser is incident vertically along the central axis of the magnetic lens and vertically bombards the target material through the transparent deposition substrate to induce the generation of a plasma plume;

[0109] Step 600: Under the action of the magnetic field of the electromagnetic lens, the plasma plume is focused during the sputtering process and then deposited upward on the transparent deposition substrate, and a two-dimensional patterned material structure is obtained by laser scanning.

[0110] In step 100, the obtaining of the correspondence between the laser induced plasma plume sputtering process and the magnetic field property includes:

[0111] Step 110, using a pulsed laser to bombard the target material through a transparent deposition substrate under different magnetic field properties, depositing on the transparent deposition substrate and obtaining a two-dimensional patterned material structure by laser scanning;

[0112] Step 120, measuring the sediment line width of the laser single line scan under different magnetic field properties;

[0113] Step 130 , establishing a corresponding relationship between the laser induced plasma plume sputtering process and the magnetic field property according to the measured line width of the laser single line scanning deposit.

[0114] In step 120, the line width of the deposits scanned by a single laser line under different magnetic field properties is measured by observation using an electron microscope and / or an atomic force microscope.

[0115] In step 200, designing a magnetic lens according to the corresponding relationship includes:

[0116] Step 210, determining the magnetic field properties corresponding to the single line width and thickness of the target deposit according to the correspondence between the laser induced plasma plume sputtering process and the magnetic field properties;

[0117] Step 220 , designing a magnetic lens according to the magnetic field properties corresponding to the single line width and thickness of the target deposit.

[0118] The magnetic field properties include magnetic field strength and magnetic flux lines distribution.

[0119] In step 600, during the process of the pulse laser bombarding the target material, the deposition rate of the plasma plume is measured in real time, and the magnetic field properties of the magnetic lens are adjusted in real time according to the deposition rate.

[0120] The pulse laser is a femtosecond laser.

[0121] The femtosecond laser has a pulse width of 350 fs to 10 ps, ​​a pulse repetition frequency of 1 MHz to 50 MHz, and a pulse energy of 10 μJ to 80 μJ.

[0122] The distance between the target and the transparent deposition substrate is 0.1 mm to 10 mm.

[0123] This embodiment also provides a magnetic focusing transmission type pulsed laser deposition device, which is used to implement the magnetic focusing transmission type pulsed laser deposition method as described above, including:

[0124] A laser, used for emitting the pulsed laser;

[0125] A transparent deposition substrate, used for transmitting the pulse laser and depositing the plasma plume;

[0126] A magnetic lens, used to generate a magnetic field between the target and the transparent deposition substrate;

[0127] A controller is used to control the working states of the laser and the magnetic field generating device.

[0128] The device also comprises a deposition rate measuring device for measuring the deposition rate of the plasma plume in real time, and the deposition rate measuring device is electrically connected to the controller.

[0129] Specifically, in this embodiment, the deposition rate measuring device is a quartz crystal microbalance.

[0130] More specifically, the magnetic lens includes an energized solenoid.

[0131] In this embodiment, the method is used to prepare a high-precision CuO / Cu2O mixed patterned deposit, including the following steps:

[0132] Step 1: Obtain the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties:

[0133] The substrate was deposited using a copper target and quartz glass.

[0134] The transparent deposition substrate and the copper target are fixed inside the magnetic lens. The transparent deposition substrate is placed parallel to and directly above the copper target and separated from it by a certain distance. The transparent deposition substrate and the copper target are both perpendicular to the central axis of the magnetic lens. The deposition device as a whole is placed in an atmospheric environment.

[0135] A femtosecond laser (pulse width 500 fs, repetition rate 20 MHz, pulse energy 50 μJ) was used to bombard the target through the quartz glass deposition substrate.

[0136] The uniform magnetic field intensity generated by the magnetic field generating device was changed (0Gs, 310Gs, 771Gs, 1237Gs, 1545Gs).

[0137] Square CuO / Cu2O deposits of 5 mm × 5 mm with a gap of 0.08 mm were deposited at each magnetic field strength.

[0138] like Figure 5 As shown in the figure, the sediments obtained under different magnetic field strengths were observed under an optical microscope. Obviously, the samples under 310Gs and 771Gs magnetic fields had the best deposition effect, showing distinct and evenly distributed strip-shaped sediments with obvious gaps. The deposition line density was high and the deposition line width was smaller. The atomic force microscope (AFM) was used to observe the deposition thickness changes of the sediments. Figure 6 As shown, Figure 6 The thickness of the deposits at 0Gs and 310Gs was observed using an atomic force microscope (AFM). After applying a 310Gs magnetic field, the deposited sample became denser, with a thickness of up to 600nm. More importantly, the surface roughness increased from 209.82nm to 363.75nm, and the magnetic field showed a very obvious focusing effect.

[0139] According to the measured sediment line width and thickness results of equal laser single line scanning, the corresponding relationship between the laser induced plasma plume sputtering process and the magnetic field properties is established, and the relationship curve is fitted.

[0140] Step 2: Design the magnetic lens according to the magnetic field properties corresponding to the single line width and thickness of the target sediment:

[0141] The goal is to prepare a patterned deposit with low line width and high definition. According to the relationship curve obtained in step 1, the magnetic field strength corresponding to the minimum deposit line width is selected.

[0142] Step 3: Prepare dense and clear patterned deposits at 771 Gs:

[0143] The fixing bracket and the quartz glass deposition substrate are placed in the magnetic lens.

[0144] Place the copper target on a fixed support.

[0145] The distance between the target and the quartz glass deposition substrate was adjusted to 5 mm.

[0146] Start the magnetic lens and set the magnetic field strength to 771Gs.

[0147] Start the femtosecond laser to bombard the target through the quartz glass deposition substrate.

[0148] The deposition rate is monitored in real time, and the magnetic field strength is fine-tuned according to the deposition rate to maintain a stable deposition rate.

[0149] After the deposition is completed, a high-precision patterned deposit of 5 mm × 5 mm is obtained.

[0150] Similarly, under the same conditions, the magnetic field strength was changed to 0 Gs to produce a 5 mm × 5 mm patterned deposit.

[0151] like Figure 7 The images of patterned deposits obtained under 0Gs and 771Gs are shown in the figure. Under the condition of magnetic field strength of 771Gs, the deposited lines are dense and clear, and the deposited line width is only 79.8μm. However, the deposited lines obtained without magnetic field are blurred due to the small deposited size and small deposited amount, and the whole pattern has no obvious boundary.

[0152] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the application. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a restriction. Therefore, other examples of exemplary embodiments can have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in the subsequent accompanying drawings.

[0153] In addition, it should be noted that the use of terms such as "first" and "second" to limit is only for the convenience of distinction. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0154] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A magnetic focusing transmission pulsed laser deposition method, characterized in that: The following steps are involved: Obtain the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties; Design a magnetic lens according to the corresponding relationship; A magnetic focusing transmission pulse laser deposition device is designed. A transparent deposition substrate and a target are fixed inside a magnetic lens. The transparent deposition substrate is placed parallel to and directly above the target and at a certain distance from the target. Both the transparent deposition substrate and the target are perpendicular to the central axis of the magnetic lens. The deposition device is placed in the atmosphere as a whole. Applying a parallel magnetic field perpendicular to the target material between the target material and the transparent deposition substrate through an electromagnetic lens; The pulsed laser is incident vertically along the central axis of the magnetic lens and vertically bombards the target through the transparent deposition substrate, inducing the generation of plasma plume; Under the action of the magnetic field of the electromagnetic lens, the plasma plume is focused during the sputtering process and then deposited upward onto the transparent deposition substrate, and a two-dimensional patterned material structure is obtained by laser scanning.

2. The magnetic focusing transmission pulsed laser deposition method according to claim 1, characterized in that: Obtain the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties, including: Under different magnetic field properties, a pulsed laser is used to bombard the target material through a transparent deposition substrate, and a two-dimensional patterned material structure is obtained by deposition on the transparent deposition substrate and laser scanning; Measure the sediment line width of laser single line scanning under different magnetic field properties; Based on the measured line width of the laser single-line scanning deposit, the corresponding relationship between the laser-induced plasma plume sputtering process and the magnetic field properties is established.

3. The magnetic focusing transmission pulsed laser deposition method according to claim 2, characterized in that: The measurement of the line width of the deposits scanned by laser single line under different magnetic field properties is carried out by observation using an electron microscope and / or an atomic force microscope.

4. The magnetic focusing transmission pulsed laser deposition method according to claim 3, characterized in that: The method of designing a magnetic lens according to the corresponding relationship comprises: According to the correspondence between the laser-induced plasma plume sputtering process and the magnetic field properties, the magnetic field properties corresponding to the single line width and thickness of the target deposit are determined; Design the magnetic lens according to the magnetic field properties corresponding to the single line width and thickness of the target sediment; The magnetic field properties include magnetic field strength and magnetic flux lines distribution.

5. The magnetic focusing transmission pulsed laser deposition method according to claim 1, characterized in that: During the process of pulse laser bombarding the target material, the deposition rate of the plasma plume is measured in real time, and the magnetic field properties of the magnetic lens are adjusted in real time according to the deposition rate.

6. The magnetic focusing transmission pulsed laser deposition method according to claim 1, characterized in that: The pulse laser is a femtosecond laser.

7. The magnetic focusing transmission pulsed laser deposition method according to claim 6, characterized in that: The femtosecond laser has a pulse width of 350 fs to 10 ps, ​​a pulse repetition frequency of 1 MHz to 50 MHz, and a pulse energy of 10 μJ to 80 μJ.

8. The magnetic focusing transmission pulsed laser deposition method according to claim 1, characterized in that: The distance between the target and the transparent deposition substrate is 0.1 mm to 10 mm.

9. A magnetic focusing transmission pulsed laser deposition device, used to implement the magnetic focusing transmission pulsed laser deposition method according to any one of claims 1 to 8, characterized in that: include: A laser, used for emitting the pulse laser; A transparent deposition substrate, used for transmitting the pulse laser and depositing the plasma plume; A magnetic lens, used to generate a magnetic field between the target and the transparent deposition substrate; A controller is used to control the working states of the laser and the magnetic field generating device.

10. The magnetic focusing transmission pulse laser deposition device according to claim 9, characterized in that: The device also comprises a deposition rate measuring device for measuring the deposition rate of the plasma plume in real time, and the deposition rate measuring device is electrically connected to the controller.

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