Mold Design Method, Mold and Growth Furnace for Growing Gallium Oxide Crystals by the Edge-defined Film-fed Growth (EFG) Method

Abstract

The present invention provides a mold design method, a mold and a growth furnace for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method, which relates to the technical field of crystal growth; the method includes: determining a crystallization interface based on a crystal growth furnace including the mold to be designed and a gallium oxide crystal; when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than a target distance and the crystallization interface does not meet the target conditions, performing a first grooving treatment on the mold to be designed; when the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions, performing a second grooving treatment on the mold to be designed until the crystallization interface meets the target conditions; when the maximum distance is less than or equal to the target distance and the crystallization interface meets the target conditions, determining the mold to be designed as the target mold. The embodiments of the present invention improve the stability of the crystal growth process and the crystal growth quality of gallium oxide crystals.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal growth, and in particular, to a method for designing a mold, a mold, and a growth furnace for growing gallium oxide crystals by the edge-defined film-fed growth method. Background Art

[0002] Gallium oxide (Ga 2 O 3 ) crystals have attracted much attention due to their high bandgap width (4.8 eV), high breakdown electric field strength, and excellent thermal stability, and are widely used in high-power electronic devices, ultraviolet photodetectors, transparent conductive films, and other optoelectronic devices. The edge-defined film-fed growth method (The Edge-defined Film-fed Growth Method) is one of the methods for growing large-size gallium oxide single crystals. By placing a gallium oxide melt in a crucible fixed with a mold, a capillary slit is left in the middle of the mold, and the gallium oxide melt rises to the top of the mold through the capillary action of the capillary slit, forms a thin film and diffuses around, and is induced to crystallize by a seed crystal to form a gallium oxide single crystal.

[0003] During the process of growing gallium oxide crystals by the edge-defined film-fed growth method, the shape of the top of the mold affects the shape of the crystallization interface of the gallium oxide crystal, and the shape of the crystallization interface further determines the stability of crystal growth; specifically, when the shape of the top of the mold is in a groove shape, a crystallization interface convex toward the gallium oxide melt is easily formed, and this kind of crystallization interface is beneficial to improving the stability of crystal growth. When the shape of the top of the mold is a plane or even convex upward, it is easy to cause the crystallization interface to be concave toward the crystal, and then the stability of crystal growth decreases. Therefore, the shape of the top of the mold currently used for growing gallium oxide crystals by the edge-defined film-fed growth method is generally in a groove shape as Figure 1 shown.

[0004] However, the grooves at the top of the current mold are all designed to penetrate through both ends, which easily causes the surface tension of the gallium oxide melt to be separated from the gallium oxide crystal because it cannot overcome its own gravity at the two end regions of the top of the mold, resulting in a decrease in the stability of the gallium oxide crystal growth process and further a decrease in the crystal growth quality of the gallium oxide crystal. Summary of the Invention

[0005] Embodiments of the present invention provide a method for designing a mold, a mold, and a growth furnace for growing gallium oxide crystals by the edge-defined film-fed growth method, which can solve the problem that the mold in the related technology easily causes the separation of the gallium oxide melt from the gallium oxide crystal, and further leads to a decrease in the growth stability and crystal growth quality of the gallium oxide crystal.

[0006] In a first aspect, embodiments of the present invention provide a method for designing a mold for growing gallium oxide crystals by the edge-defined film-fed growth method, the method comprising:

[0007] Based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown using the crystal growth furnace, determine a crystallization interface corresponding to the gallium oxide crystal; the crystallization interface is a solid-liquid interface between the gallium oxide crystal and a gallium oxide melt at the top of the mold to be designed;

[0008] Obtain the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface;

[0009] Determine whether the crystallization interface meets a target condition; the target condition is that the crystallization interface bulges towards the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed;

[0010] In the case where the maximum distance is less than a target distance and the crystallization interface does not meet the target condition, perform a first grooving process on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed after the first grooving process and the edge of the crystallization interface is equal to the target distance and / or the crystallization interface meets the target condition;

[0011] In the case where the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, perform a second grooving process on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed after the second grooving process and the edge of the crystallization interface is equal to the target distance;

[0012] In the case where the maximum distance is less than or equal to the target distance and the crystallization interface meets the target condition, determine the mold to be designed as a target mold.

[0013] In a second aspect, an embodiment of the present invention provides a mold, and the mold is designed by the mold design method for growing a gallium oxide crystal by the edge-defined film-fed growth (EFG) method as described in any one of the above.

[0014] In a third aspect, an embodiment of the present invention provides a crystal growth furnace, and the crystal growth furnace includes the mold as described above.

[0015] The mold design method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the embodiments of the present invention first determines the crystallization interface corresponding to the gallium oxide crystal based on a crystal growth furnace including the mold to be designed and the gallium oxide crystal grown by using the crystal growth furnace. Then, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than the target distance and the crystallization interface does not meet the target conditions, the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is increased to the target distance or the crystallization interface is made to meet the target conditions through a single groove treatment; when the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions, through a secondary groove treatment, while ensuring that the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, the mold to be designed is subjected to a secondary groove treatment according to the crystallization interface to increase the depression degree of the top of the mold to be designed until the crystallization interface meets the target conditions. When the maximum distance is less than or equal to the target distance and the crystallization interface meets the target conditions, the mold to be designed is determined as the target mold. The embodiments of the present invention, on the premise of ensuring that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, increase the depression degree of the top of the mold to be designed through a single groove treatment and a secondary groove treatment so that the crystallization interface meets the target conditions, avoiding the problem of the decline in crystal growth stability caused by the crystallization interface concaving towards the gallium oxide crystal. Further, the embodiments of the present invention also avoid the problem of the detachment of the gallium oxide melt from the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, improving the stability of the crystal growth process for growing gallium oxide crystals by using the crystal growth furnace including the target mold, and thus improving the crystal growth quality of the grown gallium oxide crystals. Description of the Drawings

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other drawings based on these drawings without creative efforts.

[0017] Figure 1 is a schematic structural diagram of a mold in a crystal growth furnace of a related technology provided by the present invention;

[0018] Figure 2 is a flowchart of the steps of a mold design method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the present invention;

[0019] Figure 3 is a schematic structural diagram of a crystal growth furnace provided by the present invention;

[0020] Figure 4 It is a schematic side view of a crystal growth furnace provided by the present invention Figure 1 ;

[0021] Figure 5 It is a schematic side view of a crystal growth furnace provided by the present invention Figure 2 ;

[0022] Figure 6 It is a schematic structure of a mold to be designed provided by the present invention Figure 1 ;

[0023] Figure 7 It is a schematic cross-sectional structure of a mold to be designed along the width direction provided by the present invention Figure 1 ;

[0024] Figure 8 It is a schematic side view of a mold to be designed along the thickness direction provided by the present invention Figure 1 ;

[0025] Figure 9 It is a schematic structure of a mold to be designed provided by the present invention Figure 2 ;

[0026] Figure 10 It is a schematic cross-sectional structure of a mold to be designed along the width direction provided by the present invention Figure 2 ;

[0027] Figure 11 It is a schematic side view of a mold to be designed along the thickness direction provided by the present invention Figure 2 ;

[0028] Figure 12 It is a schematic structure of a mold to be designed provided by the present invention Figure 3 ;

[0029] Figure 13 It is a schematic cross-sectional structure of a mold to be designed along the width direction provided by the present invention Figure 3 ;

[0030] Figure 14 It is a schematic cross-sectional structure of a mold to be designed along the width direction provided by the present invention Figure 4 ;

[0031] Figure 15 It is a schematic cross-sectional structure of a mold to be designed along the thickness direction provided by the present invention Figure 1 ;

[0032] Figure 16 It is a schematic structure of a mold to be designed provided by the present invention Figure 4 ;

[0033] Figure 17 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the width direction Figure 5 ;

[0034] Figure 18 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the thickness direction Figure 2 ;

[0035] Figure 19 It is a schematic structure of a mold to be designed provided by the present invention Figure 5 ;

[0036] Figure 20 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the width direction Figure 6 ;

[0037] Figure 21 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the thickness direction Figure 3 ;

[0038] Figure 22 It is a schematic structure of a mold to be designed provided by the present invention Figure 6 ;

[0039] Figure 23 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the width direction Figure 7 ;

[0040] Figure 24 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the thickness direction Figure 4 ;

[0041] Figure 25 It is a schematic structure of a mold to be designed provided by the present invention Figure 7 ;

[0042] Figure 26 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the width direction Figure 8 ;

[0043] Figure 27 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the thickness direction Figure 5 ;

[0044] Figure 28 It is a schematic structure of a mold to be designed provided by the present invention Figure 8 ;

[0045] Figure 29 It is a schematic cross-sectional structure of a mold to be designed provided by the present invention along the width direction Figure 9 ;

[0046] Figure 30 It is a structural schematic diagram of a mold to be designed provided by the present invention Figure 9 ;

[0047] Figure 31 It is a cross-sectional structural schematic diagram of a mold to be designed provided by the present invention along the width direction Figure 10 ;

[0048] Figure 32 It is a logic block diagram of a mold design device for growing gallium oxide crystals by the guiding mold method provided by the present invention

[0049] Reference numerals:

[0050] 11 - Crystal growth furnace; 12 - Gallium oxide crystal; 121 - Mold to be designed; 1211 - Capillary slit; 122 - Induction coil; 123 - Crucible; 13 - Gallium oxide melt; 131 - Liquid bridge; 01 - Crystallization interface; 011 - Edge region; 012 - Intermediate region; 21 - First edge; 22 - Second edge; 23 - Third edge; 24 - Fourth edge; 31 - First concave path; 32 - Second concave path; 33 - Third concave path; 331 - Third concave sub-path; 332 - Fourth concave sub-path; 34 - Fourth concave path; 341 - First concave sub-path; 342 - Second concave sub-path; 35 - Connection path; 001 - First concave position; 002 - Second concave position; 003 - Third concave position; 004 - Fourth concave position; 41 - First side; 42 - Second side Specific embodiments

[0051] To make the above objects, features, and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention

[0052] Method embodiments

[0053] Referring to Figure 2 , a step flowchart of a mold design method for growing gallium oxide crystals by the guiding mold method of the present invention is shown. The method may specifically include the following steps:

[0054] Step S101, based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by using the crystal growth furnace, determine the crystallization interface corresponding to the gallium oxide crystal

[0055] Among them, the mold to be designed is provided with a capillary slit along the width direction of the mold to be designed, and the capillary slit is used to transport the gallium oxide melt to the top of the mold to be designed, and the crystallization interface is the solid-liquid interface between the gallium oxide crystal and the gallium oxide melt at the top of the mold to be designed.

[0056] Step S102: Obtain the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface.

[0057] Step S103: Determine whether the crystallization interface meets the target conditions.

[0058] Among them, the target condition is that the crystallization interface bulges towards the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed.

[0059] Step S104: In the case where the maximum distance is less than the target distance and the crystallization interface does not meet the target conditions, perform a first grooving process on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed after the first grooving process and the edge of the crystallization interface is equal to the target distance and / or the crystallization interface meets the target conditions.

[0060] Among them, the target distance is the limit distance between the top of the mold to be designed and the crystallization interface when the surface tension and gravity of the gallium oxide melt are balanced.

[0061] Step S105: In the case where the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions, perform a second grooving process on the mold to be designed according to the crystallization interface until the crystallization interface meets the target conditions.

[0062] Among them, the maximum distance between the top edge of the mold to be designed after the second grooving process and the edge of the crystallization interface is equal to the target distance.

[0063] Step S106: In the case where the maximum distance is less than or equal to the target distance and the crystallization interface meets the target conditions, determine the mold to be designed as the target mold.

[0064] The mold design method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided by the embodiments of the present invention can be applied to any electronic device with data processing functions, and the electronic device may include, but is not limited to, mobile terminals such as laptop computers, personal digital assistants (PDAs), handheld devices, computing devices, etc., and fixed terminals such as digital TVs, desktop computers, etc.

[0065] The mold to be designed is a mold provided in a crystal growth furnace for growing gallium oxide crystals by the mold guiding method. Refer to Figure 3 , a schematic structural diagram of a crystal growth furnace provided by the present invention is shown. As Figure 3 shown, the crystal growth furnace 11 includes a mold 121 to be designed, a crucible 123, and an induction coil 122. Among them, the crucible 123 contains a gallium oxide melt 13. The induction coil 122 is arranged on the outer wall of the crucible 123. When an electric current is passed into the induction coil 122, the induction coil 122 heats the gallium oxide melt 13 in the crucible 123 through the crucible 123. The bottom of the mold 121 to be designed is fixed in the crucible 123. A capillary slit 1211 is arranged in the mold 121 to be designed along the width direction of the mold 121 to be designed. The gallium oxide melt 13 in the crucible 123 can rise to the top of the mold 121 to be designed by capillary action, form a thin film at the top of the mold 121 to be designed and spread around, and form a liquid bridge 131 between the mold 121 to be designed and the gallium oxide crystal 12. The liquid bridge 131 is induced by the seed crystal to crystallize to form the gallium oxide crystal 12. Among them, the gallium oxide crystal 12 is specifically a gallium oxide single crystal.

[0066] It can be understood that the gallium oxide melt 13 between the top of the mold 121 to be designed and the gallium oxide crystal 12 is the liquid bridge 131. The upper surface of the liquid bridge 131 is the solid-liquid interface between the gallium oxide crystal 12 and the gallium oxide melt 13, and this solid-liquid interface is the crystallization interface 01 corresponding to the gallium oxide crystal 12.

[0067] In step S101, the electronic device can determine the crystallization interface corresponding to the gallium oxide crystal based on the method for determining the crystallization interface known to those skilled in the art, based on the crystal growth furnace including the mold to be designed and the gallium oxide crystal grown by using the crystal growth furnace. In some embodiments, the crystallization interface determined through step S101 is the crystallization interface simulated by the electronic device based on the current mold to be designed in the crystal growth furnace and the gallium oxide crystal grown by the mold guiding method using the crystal growth furnace, and this crystallization interface is infinitely close to the actual solid-liquid interface between the gallium oxide crystal and the gallium oxide melt.

[0068] Among them, the width direction of the mold to be designed refers to the direction of the side with a larger size in the plane perpendicular to the height direction of the mold to be designed in the mold to be designed; refer to Figure 3 , the width direction of the mold 121 to be designed is parallel to the direction where the y-axis is located. In the plane perpendicular to the height direction of the mold 121 to be designed in the mold 121 to be designed, the size of the side with a larger size is the width of the mold 121 to be designed.

[0069] The thickness direction of the mold to be designed refers to the direction of the side perpendicular to the width direction in the plane perpendicular to the height direction of the mold to be designed; refer toFigure 3 The thickness direction of the mold 121 to be designed is parallel to the direction of the x-axis. In the plane of the mold 121 to be designed that is perpendicular to the height direction of the mold 121 to be designed, the dimension of the side perpendicular to the width direction is the thickness of the mold 121 to be designed.

[0070] After determining the crystallization interface corresponding to the gallium oxide crystal through step S101, the electronic device may execute step S102 to obtain the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface determined in step S101, and execute step S103 to determine whether the crystallization interface meets the target condition. Based on the maximum distance obtained through step S102 and the determination result of whether the crystallization interface meets the target condition determined in step S103, perform operations corresponding to the maximum distance and the determination result of whether the crystallization interface meets the target condition.

[0071] Among them, the top edge is the outermost edge in the top of the mold to be designed, that is, the edges around the top.

[0072] After step S101, the electronic device may execute step S102 and step S103 in parallel, or may execute step S102 and step S103 sequentially. The embodiments of the present invention do not make specific limitations on the execution order of step S102 and step S103.

[0073] Specifically, in step S102, the electronic device may respectively determine the vertical distance between each point in the top edge of the mold to be designed and the crystallization interface determined through step S101, and then determine the maximum value among the vertical distances as the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface.

[0074] As an example, referring to Figure 4 , a schematic side structure of a crystal growth furnace provided by the present invention is shown Figure 1 , specifically, Figure 4 is a schematic side structure diagram in the A-A direction of the crystal growth furnace 11 shown in Figure 3 ; as shown in Figure 4 , when the shape of the top of the mold 121 to be designed is a plane and the crystallization interface 01 bulges towards the mold 121 to be designed, the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01 is the vertical distance between the highest point in the edge of the crystallization interface 01 and the top edge of the mold 121 to be designed.

[0075] As another example, referring to Figure 5 , a schematic side structure of a crystal growth furnace provided by the present invention is shown Figure 2 , specifically, Figure 5 is in Figure 3Schematic side view of the crystal growth furnace 11 shown in the A-A direction; when the shape of the top of the mold 121 to be designed is a groove shape penetrating both ends and the crystallization interface 01 protrudes towards the mold 121 to be designed, the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01 can be the vertical distance between the lowest point of the edge of the crystallization interface 01 and the lowest point of the top edge of the mold 121 to be designed.

[0076] In the embodiment of the present invention, the target condition is that the crystallization interface as a whole protrudes towards the mold to be designed and the crystallization interface is not adhered to the mold to be designed; it can be understood that, when the crystallization interface as a whole protrudes towards the mold to be designed, the crystal growth process of growing gallium oxide crystals by the edge-defined film-fed growth method using a crystal growth furnace including the mold to be designed has relatively high stability. Further, when the crystallization interface is not adhered to the mold to be designed, it indicates that the crystallization interface protruding towards the mold to be designed will not adhere to the top of the mold to be designed during the crystal growth process, which is beneficial to further improving the stability of the crystal growth process and the crystal quality of the grown gallium oxide crystals.

[0077] The target distance is the limit distance between the top of the mold to be designed and the crystallization interface when the surface tension and gravity of the gallium oxide melt are in balance, and the limit distance is the maximum distance that can be reached between the top edge of the mold to be designed and the edge of the crystallization interface when the surface tension and gravity of the gallium oxide melt are in balance; specifically, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, the surface tension of the gallium oxide melt is equal in magnitude and opposite in direction to its own gravity, that is, the surface tension of the gallium oxide melt can be balanced with its own gravity, so that the gallium oxide melt will not separate from the gallium oxide crystal because it cannot overcome its own gravity; when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is greater than the target distance, the surface tension of the gallium oxide melt will not be able to overcome its own gravity and will separate from the gallium oxide crystal.

[0078] Refer to Figure 4 and Figure 5 , the process for the electronic device to determine the target distance includes steps A11 to step A12:

[0079] Step A11, calculate the limit height of the liquid bridge meniscus according to the Young-Laplace equation, as shown in Figure 4 and Figure 5 shown, the meniscus refers to the liquid surface in the liquid bridge 131 that contacts the air.

[0080] Specifically, the shape of the meniscus can be described by the Young-Laplace equation shown as follows:

[0081] (1)

[0082] Among them, represents the density of the gallium oxide melt 13; represents the acceleration due to gravity; represents the vertical distance between the free surface of the gallium oxide melt 13 in the crucible and the top of the mold 121 to be designed; represents the function between the height of the meniscus in the z-axis direction and the distance in the x-axis direction; represents the surface tension of the gallium oxide melt 13; and represents the radius of curvature of the meniscus.

[0083] Integrating formula 1 along the x-axis direction can obtain the following formula:

[0084] (2)

[0085] Among them, represents the integration constant.

[0086] It can be understood that to achieve the equal-diameter growth of the gallium oxide crystal 12, it is necessary to ensure that the growth angle α is between 10° and 20°. As Figure 4 and Figure 5 shown, the growth angle α is the angle between the meniscus and the direction of the length of the gallium oxide crystal 12.

[0087] Thus, the initial value conditions shown below can be determined:

[0088] (3)

[0089] (4)

[0090] Among them, represents the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01, that is, the height of the meniscus; represents the growth angle.

[0091] In addition, since gravity and surface tension are balanced forces, then , so the boundary value condition corresponding to the limit height (h = h max ) of the meniscus of the liquid bridge 131 is:

[0092] (5)

[0093] (6)

[0094] Substituting the initial value conditions and the boundary value conditions into formula 2, we get:

[0095] (7)

[0096] Among them, represents the limit height of the meniscus.

[0097] After arrangement, it can be obtained:

[0098] (8)

[0099] According to formula (8), the limit height of the meniscus can be determined , and the limit height of the meniscus depends on the vertical distance between the free surface of the gallium oxide melt 13 in the crucible and the top of the mold 121 to be designed .

[0100] Step A12: Determine the target distance according to the limit height of the liquid bridge meniscus.

[0101] Specifically, in some embodiments, the target distance can be equal to the limit height of the meniscus ; in other embodiments, the target distance can be any value less than the limit height of the meniscus .

[0102] In the embodiments of the present invention, when the crystallization interface meets the target conditions and the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, it indicates that the crystal growth process of growing gallium oxide crystals by the edge-defined film-fed growth method using a crystal growth furnace including the mold to be designed has high stability and the crystallization interface will not adhere to the mold to be designed. And when the maximum distance is less than or equal to the target distance, the gallium oxide melt will not separate from the gallium oxide crystal because the surface tension cannot overcome its own gravity. The electronic device can execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold, and use the crystal growth furnace including the target mold to grow gallium oxide crystals.

[0103] It should be noted that the crystallization interface convex towards the mold to be designed as a whole means that there is no area in the crystallization interface concave towards the gallium oxide crystal.

[0104] In step S103, the electronic device can determine whether the crystallization interface is convex to the mold to be designed as a whole according to the shape of the crystallization interface, and determine whether the crystallization interface adheres to the mold to be designed according to the positional relationship between the crystallization interface and the top of the mold to be designed. In the case where the crystallization interface is convex to the mold to be designed as a whole and the crystallization interface does not adhere to the mold to be designed, it is determined that the crystallization interface meets the target condition; in the case where the shape of the crystallization interface does not meet the condition of being convex to the mold to be designed as a whole, and / or the crystallization interface adheres to the mold to be designed, it is determined that the crystallization interface does not meet the target condition, and the groove processing of the mold to be designed needs to be performed through the operations corresponding to step S104 or step S105 to make the crystallization interface meet the target condition.

[0105] Among them, the electronic device determines whether the crystallization interface adheres to the mold to be designed according to the positional relationship between the crystallization interface and the top of the mold to be designed. Specifically: First, obtain the first z-axis coordinate of the lowest point of the crystallization interface and the second z-axis coordinate of the lowest point of the top edge of the mold to be designed; then, calculate the difference between the first z-axis coordinate and the second z-axis coordinate; in the case where the difference is greater than 0, it is determined that the crystallization interface does not adhere to the mold to be designed; in the case where the difference is less than or equal to 0, it is determined that the crystallization interface adheres to the mold to be designed.

[0106] In the embodiment of the present invention, in the case where the maximum distance is greater than the target distance, the electronic device can send a prompt message to the user to prompt the user to adjust the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface to be less than or equal to the target distance, and in the case where the maximum distance is less than or equal to the target distance, the electronic device continues to perform any one of step S104, step S105, and step S106.

[0107] In the case where the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, the electronic device can perform step S104 to perform a groove processing on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed after the one-time groove processing and the edge of the crystallization interface is equal to the target distance or the crystallization interface meets the target condition.

[0108] Specifically, in the case where the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, the electronic device can perform the operations corresponding to step S104 multiple times until the maximum distance between the top edge of the mold to be designed after the one-time groove processing and the edge of the crystallization interface is equal to the target distance, or the crystallization interface meets the target condition.

[0109] In other words, when the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is less than or equal to the target distance, and the crystallization interface determined based on the crystal growth furnace including the mold to be designed after the first groove treatment and the gallium oxide crystal grown by using the crystal growth furnace meets the target conditions, the electronic device may execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold. When the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is equal to the target distance, and the crystallization interface determined based on the crystal growth furnace including the mold to be designed after the first groove treatment and the gallium oxide crystal grown by using the crystal growth furnace does not meet the target conditions, the electronic device may execute step S105 to perform a second groove treatment on the mold to be designed.

[0110] Among them, the method of performing the first groove treatment on the mold to be designed can be the groove treatment method well known to those skilled in the art, as long as the maximum distance between the top edge of the mold to be designed after the first groove treatment in step S104 and the edge of the crystallization interface is less than or equal to the target distance. Exemplarily, the mold to be designed after the first groove treatment can be as Figure 1 shown, or can be as Figure 6 shown.

[0111] It should be noted that after step S104, the electronic device needs to execute step S101 again to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace including the mold to be designed after the first groove treatment and the gallium oxide crystal grown by using the crystal growth furnace, execute step S102 to obtain the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface, and execute step S103 to determine whether the crystallization interface meets the target conditions.

[0112] When the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is equal to the target distance and the crystallization interface still does not meet the target conditions, execute step S105; when the maximum distance between the top edge of the mold to be designed after the first groove treatment and the edge of the crystallization interface is less than or equal to the target distance and the crystallization interface meets the target conditions, then execute step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold.

[0113] In the embodiment of the present invention, when the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions, the electronic device executes step S105 to perform a second groove treatment on the mold to be designed whose maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions.

[0114] It can be understood that in step S105, before the electronic device executes step S105, the mold to be designed can be the mold to be designed after one groove treatment, or the mold to be designed without the first groove treatment, or the mold to be designed after two groove treatments but the crystal interface still does not meet the target conditions.

[0115] Specifically, in step S105, the electronic device can increase the depression depth of the top of the mold to be designed in any way on the premise that the maximum distance between the top edge of the mold to be designed after the two groove treatments and the edge of the crystal interface is equal to the target distance; after obtaining the mold to be designed after the two groove treatments, the electronic device needs to execute step S101 again to determine the crystal interface corresponding to the gallium oxide crystal based on the crystal growth furnace including the mold to be designed after the two groove treatments and the gallium oxide crystal grown by the crystal growth furnace, and execute step S102 to obtain the maximum distance between the top edge of the mold to be designed after the two groove treatments and the edge of the crystal interface, and execute step S103 to determine whether the crystal interface meets the target conditions; in the case where the maximum distance is equal to the target distance and the crystal interface still does not meet the target conditions, the electronic device can repeatedly execute the operations corresponding to step S105 until the maximum distance is equal to the target distance and the crystal interface meets the target conditions, and the electronic device executes step S106 to determine the current mold to be designed in the crystal growth furnace as the target mold.

[0116] In the related art, to solve the problem of the decrease in crystal growth stability caused by the concave crystal growth interface towards the gallium oxide crystal, the shape of the top of the mold in the crystal growth furnace is designed as Figure 1It is in the shape of a groove that penetrates both ends as shown. However, when the groove at the top of the mold penetrates both ends, the distance between the top edge of the mold to be designed and the crystallization interface in the two end regions at the top of the mold increases. As a result, the height of the liquid bridge meniscus in the two end regions at the top of the mold increases, and the surface tension of the gallium oxide melt cannot overcome its own gravity and separates from the gallium oxide crystal, resulting in a decrease in the stability of the gallium oxide crystal growth process, and further leading to a decrease in the crystal growth quality of the gallium oxide crystal. The mold design method for growing gallium oxide crystals by the edge-defined film-fed growth (EFG) method provided in the embodiments of the present invention, on the premise that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, increases the degree of depression of the top of the mold to be designed through a first groove treatment and a second groove treatment so that the crystallization interface meets the target conditions, avoiding the problem of decreased crystal growth stability caused by the crystallization interface concaving towards the gallium oxide crystal. Further, the embodiments of the present invention also avoid the problem of separation between the gallium oxide melt and the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold, and further improving the crystal growth quality of the grown gallium oxide crystal.

[0117] In an alternative embodiment, in the case where the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions in step S105, performing a second groove treatment on the mold to be designed according to the crystallization interface includes:

[0118] Step B11, in the case where the maximum distance is equal to the target distance, the middle region of the crystallization interface bulges towards the mold to be designed, and the edge region of the crystallization interface concaves towards the gallium oxide crystal, obtaining the width value of the edge region.

[0119] Step B12, according to the width value, the first expected depression depth of the second groove treatment, and the target plane where the capillary slit is located in the mold to be designed, determining the first depression position corresponding to the edge region from the mold to be designed.

[0120] Step B13, determining the connection path between the first depression positions in the mold to be designed.

[0121] Step B14, according to the first edge of the mold to be designed and the first depression position corresponding to the edge region, determining the first depression path corresponding to the edge region.

[0122] Step B15, according to the second edge of the mold to be designed and the connection path, determining the second depression path corresponding to the middle region.

[0123] Step B16: Perform secondary groove processing on the mold to be designed according to the first concave path and the second concave path.

[0124] In the embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the middle area of the crystallization interface bulges towards the mold to be designed, and the edge area of the crystallization interface concaves towards the gallium oxide crystal (i.e., the shape of the crystallization interface is "m" shaped), it indicates that the crystallization interface does not meet the target conditions. And since the maximum distance is equal to the target distance, the electronic device cannot perform groove processing on the mold to be designed through the primary groove processing in step S104. In this scenario, during the process of the electronic device performing secondary groove processing on the mold to be designed according to the crystallization interface, it can be achieved through the operations corresponding to steps B11 to B16.

[0125] In some embodiments, before the electronic device executes step B11, the mold to be designed can be, for example, Figures 6 to 8 the mold to be designed 121 after the primary groove processing in step S104 as shown. The shape of the top of the mold to be designed 121 is a groove shape that penetrates both ends. It should be noted that Figure 7 is a schematic cross-sectional structure diagram along the Figure 6 width direction of the mold to be designed 121 shown, Figure 8 is a schematic side structure diagram along the Figure 6 thickness direction of the mold to be designed 121 shown.

[0126] In other embodiments, before the electronic device executes step B11, the mold to be designed can be, for example, Figures 9 to 11 the mold to be designed 121 that has not undergone the primary groove processing in step S104 as shown. The shape of the top of the mold to be designed 121 is a plane. It should be noted that Figure 10 is a schematic cross-sectional structure diagram along the Figure 9 width direction of the mold to be designed 121 shown, Figure 11 is a schematic side structure diagram along the Figure 9 thickness direction of the mold to be designed 121 shown.

[0127] In still other embodiments, before the electronic device executes step B11, the mold to be designed can be the mold to be designed after secondary groove processing, and the shape of the top of the mold to be designed is a groove shape with the concave depth in the middle part greater than that in the edge part.

[0128] Referring to Figures 12 to 15 , and Figures 16 to 18, the maximum distance between the top edge of the mold 121 to be designed and the edge of the crystallization interface 01 is equal to the target distance, and when, in the width direction of the mold 121 to be designed, the middle region 012 of the crystallization interface 01 bulges towards the mold 121 to be designed and the edge region 011 of the crystallization interface 01 concaves towards the gallium oxide crystal 12, the electronic device first executes step B11 to obtain the width value S of the edge region 011.

[0129] It should be noted that Figure 12 is the mold 121 to be designed obtained by performing a secondary groove treatment on the basis of the mold 121 to be designed shown in Figures 6 to 8 ; Figure 13 and Figure 14 is a schematic cross-sectional structure diagram along the width direction of the mold 121 to be designed shown in Figure 12 ; Figure 15 is a schematic cross-sectional structure diagram along the thickness direction of the mold 121 to be designed shown in Figure 12 .

[0130] Figure 16 is the mold 121 to be designed obtained by performing a secondary groove treatment on the basis of the mold 121 to be designed shown in Figures 9 to 11 ; Figure 17 is a schematic cross-sectional structure diagram along the width direction of the mold 121 to be designed shown in Figure 16 ; Figure 18 is a schematic cross-sectional structure diagram along the thickness direction of the mold 121 to be designed shown in Figure 16 .

[0131] Among them, the width value S of the edge region 011 is the distance of the edge region 011 of the crystallization interface 01 in the width direction of the mold 121 to be designed; in step B11, the electronic device can measure the width value S of the edge region 011 by using a measuring tool.

[0132] In step B12, the electronic device can determine the first concave position 001 corresponding to the edge region 011 from the mold 121 to be designed according to the width value S obtained in step B11, the first expected concave depth L1 of the secondary groove treatment, and the target plane where the capillary slit 1211 is located.

[0133] Among them, the first expected concave depth L1 of the secondary groove treatment is a concave depth preset according to the depth required for the secondary groove treatment; as Figure 12 and Figure 16 shown, the target plane where the capillary slit 1211 is located is a plane parallel to the capillary slit 1211 in the mold 121 to be designed, and the target plane is parallel to the width direction of the mold 121 to be designed.

[0134] It can be understood that when the crystallization interface 01 is of the "m" type, the number of edge regions 011 in the crystallization interface 01 that are concave towards the gallium oxide crystal 12 is 2. Through step B11, the electronic device can respectively determine the width value S of each edge region 011.

[0135] In step B12, the electronic device can determine the first concave position 001 corresponding to each edge region 011 from the mold to be designed 121 according to the width value S of the edge region 011, the first expected concave depth L1, and the target plane.

[0136] Specifically, the electronic device can determine the intersection point of the first position indicated by the width value S of the edge region 011, the second position indicated by the first expected concave depth L1, and the target plane in the mold to be designed 121 as the first concave position 001 corresponding to this edge region 011. The number of first concave positions 001 determined by the electronic device through step B12 is equal to the number of edge regions 011, which is also 2.

[0137] In step B13, the electronic device can further determine the connection path between the two first concave positions in the mold to be designed according to the two first concave positions determined through step B12.

[0138] In the embodiment of the present invention, the connection path between the two first concave positions in the mold to be designed is a smooth connection path between the two first concave paths. As an example, referring to Figure 13 and Figure 17 , the connection path 35 between the two first concave positions 001 in the mold to be designed 121 can be a straight connection path between the two first concave positions 001; as another example, referring to Figure 14 , the connection path 35 between the two first concave positions 001 in the mold to be designed 121 can be a curved connection path between the two first concave positions 001.

[0139] It should be noted that the connection path between the first concave positions is the path corresponding to the middle region of the crystallization interface in the mold to be designed. Since the middle region of the crystallization interface protrudes towards the mold to be designed and the shape of the crystallization interface in the middle region meets the requirements of protruding towards the mold to be designed, when the middle region is not adhered to the top of the mold to be designed, there is no need to additionally increase the concave depth of the region corresponding to the middle region in the mold to be designed. In the embodiment of the present invention, it is only necessary to design the connection path corresponding to the middle region of the crystallization interface as a smooth connection path.

[0140] When the shape of the crystallization interface is of the "m" type, the concave depth of the connection path in the mold to be designed can be equal to the concave depth corresponding to the first concave position, or can be greater than the concave depth corresponding to the first concave position.

[0141] In step B14, the electronic device may use the first edge in the mold to be designed as the starting position of the path and the first concave position as the ending position of the path to determine the first concave path corresponding to the edge area of the crystallization interface; referring to Figure 12 and Figure 16 , the first edge 21 is the top edge of the mold 121 to be designed corresponding to the edge area 011 of the crystallization interface 01.

[0142] Specifically, referring to Figure 12 and Figure 13 , and Figure 16 and Figure 17 , the first concave path 31 may be a path formed by the connection between a point on the first edge 21 and the first concave position 001.

[0143] In step B15, the electronic device may use the second edge in the mold to be designed as the starting position of the path and the connection path determined in step B13 as the ending position of the path to determine the second concave path corresponding to the intermediate area; referring to Figure 12 and Figure 16 , the second edge 22 is the top edge of the mold 121 to be designed corresponding to the intermediate area 012 of the crystallization interface 01.

[0144] Specifically, referring to Figure 12 and Figure 15 , and Figure 16 and Figure 18 , the second concave path 32 may be a path formed by the connection between a point on the second edge 22 and the point on the connection path 35 with the shortest straight-line distance.

[0145] The first concave path and the second concave path are paths in the mold to be designed corresponding to the edge area of the crystallization interface. After determining the first concave path in step B14 and the second concave path in step B15, the electronic device may execute step B16 to perform secondary groove processing on the mold to be designed according to the first concave path and the second concave path, and after step B16, execute step S101 again based on the crystal growth furnace including the mold to be designed after secondary groove processing and the gallium oxide crystal grown by using the crystal growth furnace to determine the crystallization interface corresponding to the gallium oxide crystal until the crystallization interface meets the target conditions.

[0146] It should be noted that since the maximum distance between the top edge of the mold to be designed after secondary groove processing and the edge of the crystallization interface is still equal to the target distance, performing secondary groove processing on the mold to be designed according to the first concave path and the second concave path, the schematic side structure diagram of the mold to be designed after secondary groove processing is the same as that of the mold to be designed before secondary groove processing. Exemplarily, in Figure 12The schematic side view of the mold 121 to be designed in the thickness direction shown in Figure 8 is the same; in Figure 16 The schematic side view of the mold 121 to be designed in the thickness direction shown in Figure 11 is the same.

[0147] In the embodiment of the present invention, on the premise that the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, the maximum depression depth of the area corresponding to the edge area in the mold to be designed after the secondary groove treatment is increased to the first expected depression depth, so as to reduce the degree of the edge area of the crystallization interface concave towards the gallium oxide crystal. Without avoiding the separation of the gallium oxide melt from the gallium oxide crystal, the crystallization interface corresponding to the mold to be designed after the secondary groove treatment meets or approaches the target conditions, which is beneficial to obtaining a target mold with a maximum distance equal to the target distance and a crystallization interface meeting the target conditions, thereby improving the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold and the crystal quality of the grown gallium oxide crystals.

[0148] In an alternative embodiment, along the direction from the first edge to the position where the first depression is located, the angle between the first depression path and the horizontal plane remains unchanged or gradually increases; along the direction from the second edge to the connection path, the angle between the second depression path and the horizontal plane remains unchanged or gradually increases. Thus, the depression modes of the first depression path and the second depression path can be controlled more precisely, which is beneficial to improving the improvement effect on the crystallization interface concave towards the gallium oxide crystal, making the shape of the crystallization interface change from concave towards the gallium oxide crystal to convex towards the mold to be designed as a whole, and improving the degree of the crystallization interface approaching the target conditions.

[0149] Specifically, along the direction from the first edge to the position where the first depression is located, the first depression path can be a straight path with an angle between the path and the horizontal plane remaining unchanged as shown in Figure 13 and Figure 17 shown, or the first depression path can also be a curved path with an angle between the path and the horizontal plane gradually increasing.

[0150] Correspondingly, along the direction from the second edge to the connection path, the second depression path can be a straight path with an angle between the path and the horizontal plane remaining unchanged as shown in Figure 15 and Figure 18 shown, or the second depression path can also be a curved path with an angle between the path and the horizontal plane gradually increasing.

[0151] In an alternative embodiment, step S105, in the case that the maximum distance is equal to the target distance and the crystallization interface does not meet the target conditions, performing secondary groove treatment on the mold to be designed according to the crystallization interface includes:

[0152] Step B21: When the maximum distance is equal to the target distance and the crystallization interface is concave as a whole towards the gallium oxide crystal, obtain the ratio of the width to the thickness of the mold to be designed, and obtain the width-thickness ratio.

[0153] Step B22: Determine the second concave position according to the second expected concave depth of the secondary groove treatment, the target plane where the capillary slit is located in the mold to be designed, and the position of the highest point of the crystallization interface.

[0154] Step B23: Determine the third concave path along the width direction of the mold to be designed and the fourth concave path along the thickness direction of the mold to be designed according to the width-thickness ratio, the top edge of the mold to be designed, and the second concave position.

[0155] Step B24: Perform secondary groove treatment on the mold to be designed according to the third concave path and the fourth concave path.

[0156] In the embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, and the crystallization interface is concave as a whole towards the gallium oxide crystal (that is, the shape of the crystallization interface is "n" type), it indicates that the crystallization interface does not meet the target conditions. And because the maximum distance is equal to the target distance, the electronic device cannot perform groove treatment on the mold to be designed through the primary groove treatment in step S104. In this scenario, during the process of the electronic device performing secondary groove treatment on the mold to be designed according to the crystallization interface, it can be realized through the operations corresponding to steps B21 to B24.

[0157] The crystallization interface being concave as a whole towards the gallium oxide crystal means that there is no area in the crystallization interface that protrudes towards the mold to be designed.

[0158] Among them, before the electronic device executes step B21, the mold to be designed can be the mold to be designed after the primary groove treatment in step S104; before the electronic device executes step B21, the mold to be designed can also be the mold to be designed that has not undergone the primary groove treatment in step S104; before the electronic device executes step B21, the mold to be designed can also be the mold to be designed after the secondary groove treatment.

[0159] Refer to Figures 19 to 21 and Figures 22 to 24 When the maximum distance between the top edge of the mold to be designed 121 and the edge of the crystallization interface 01 is equal to the target distance, and in the width direction of the mold to be designed 121, the crystallization interface 01 is concave as a whole towards the gallium oxide crystal 12, the electronic device executes step B21 to obtain the width-thickness ratio of the mold to be designed 121, and executes step B22 to determine the second concave position 002.

[0160] It should be noted that Figure 19 Based on the to-be-designed mold 121 shown Figures 6 to 8 The to-be-designed mold 121 is obtained by performing a secondary groove treatment on the to-be-designed mold 121 shown; Figure 20 It is Figure 19 A schematic cross-sectional structure diagram along the width direction of the to-be-designed mold 121 shown, Figure 21 It is Figure 19 A schematic cross-sectional structure diagram along the thickness direction of the to-be-designed mold 121 shown.

[0161] Figure 22 Based on the to-be-designed mold 121 shown Figures 9 to 11 The to-be-designed mold 121 is obtained by performing a secondary groove treatment on the to-be-designed mold 121 shown; Figure 23 It is Figure 22 A schematic cross-sectional structure diagram along the width direction of the to-be-designed mold 121 shown, Figure 24 It is Figure 22 A schematic cross-sectional structure diagram along the thickness direction of the to-be-designed mold 121 shown.

[0162] Specifically, in step B21, the electronic device first obtains the width dimension and thickness dimension of the to-be-designed mold 121, then calculates the ratio between the width dimension and the thickness dimension to obtain the width-to-thickness ratio of the to-be-designed mold 121, and determines the width-to-thickness ratio of the to-be-designed mold 121 as the aspect ratio of the to-be-designed mold 121.

[0163] In step B22, the electronic device determines the second concave position 002 according to the third position indicated by the second expected concave depth L2 of the secondary groove treatment, the target plane where the capillary slit 1211 is located, and the position of the highest point of the crystallization interface 01. Specifically, the electronic device may use the intersection point of the third position indicated by the second expected concave depth L2, the target plane, and the position of the highest point of the crystallization interface 01 in the to-be-designed mold 121 as the second concave position 002. In the embodiments of the present invention, the number of the second concave positions 002 determined by the electronic device through step B22 is 1.

[0164] Among them, the second expected concave depth L2 of the secondary groove treatment is a concave depth preset according to the depth that needs to be concave during the secondary groove treatment. The second expected concave depth L2 may be the same as or different from the first expected concave depth L1; as Figure 19 and Figure 22 shown, the target plane where the capillary slit 1211 is located is a plane parallel to the capillary slit 1211 in the to-be-designed mold 121, and the target plane is parallel to the width direction of the to-be-designed mold 121.

[0165] In addition, referring toFigures 19 to 21 , and Figures 22 to 24 , when the crystallization interface 01 is of the "n" type, there is a highest point on the crystallization interface 01. In the embodiments of the present invention, the second concave position 002 is determined according to the position of the highest point of the crystallization interface 01, and based on the second concave position 002, step B23 is executed to determine the third concave path 33 and the fourth concave path 34, which can improve the improvement effect on the shape of the crystallization interface 01 after the secondary groove processing of the mold to be designed 121 according to the third concave path 33 and the fourth concave path 34. Furthermore, the crystallization interface 01 can be efficiently made to meet the target conditions, and the target mold can be obtained.

[0166] Specifically, in the case of obtaining the aspect ratio and the second concave position, the electronic device can execute step B23 to determine the third concave path 33 along the width direction of the mold to be designed 121 and the fourth concave path 34 along the thickness direction of the mold to be designed 121 according to the aspect ratio, the top edge of the mold to be designed 121, and the second concave position 002.

[0167] Among them, as Figure 19 and Figure 22 shown, the top edge of the mold to be designed 121 includes a third edge 23 and a fourth edge 24; the third edge 23 is the top edge of the mold to be designed 121 in the thickness direction of the mold to be designed 121, and the fourth edge 24 is the top edge of the mold to be designed 121 in the width direction of the mold to be designed 121.

[0168] In the case of a relatively small aspect ratio, it indicates that the gap between the width and the thickness of the mold to be designed is relatively small. The top edge of the mold to be designed can be used as the path starting position, and the second concave position can be used as the path ending position. The third concave path is determined along the width direction of the mold to be designed, and the fourth concave path is determined along the thickness direction of the mold to be designed; the third concave path and the fourth concave path can be straight lines or curves. Among them, along the direction from the top edge of the mold to be designed to the second concave position, the angle between the third concave path and the horizontal plane remains unchanged or gradually increases, and the angle between the fourth concave path and the horizontal plane remains unchanged or gradually increases.

[0169] In the case of a relatively large aspect ratio, it indicates that the gap between the width and the thickness of the mold to be designed is relatively large. If the top edge of the mold to be designed is directly used as the path starting position and the second concave position is used as the path ending position, and the straight line or curve along the width direction of the mold to be designed is determined as the third concave path, and the straight line or curve along the thickness direction of the mold to be designed is determined as the fourth concave path, the improvement effect on the shape of the crystallization interface after the secondary groove processing of the mold to be designed according to the third concave path and the fourth concave path is not obvious.

[0170] In an embodiment of the present invention, in order to improve the improvement effect on the shape of the crystallization interface, when the aspect ratio is relatively large, the electronic device may, in the process of determining the third concave path and / or the fourth concave path, determine at least two concave sub-paths that make up the third concave path and / or the fourth concave path in stages, and along the direction from the top edge of the mold to be designed to the second concave position, the angle between the concave sub-paths that make up the third concave path and / or the fourth concave path and the horizontal plane gradually increases. Thus, the problem that the improvement effect on the shape of the crystallization interface is not obvious after the secondary groove treatment caused by the relatively large aspect ratio of the mold to be designed can be overcome, and further, the crystallization interface can meet the target conditions more accurately and efficiently, and the target mold can be obtained.

[0171] In the case of obtaining the third concave path and the fourth concave path through step B23, the electronic device may perform secondary groove treatment on the mold to be designed according to the third concave path and the fourth concave path, and then execute step S101 again to determine the crystallization interface corresponding to the gallium oxide crystal based on the crystal growth furnace including the mold to be designed after the secondary groove treatment and the gallium oxide crystal grown by using the crystal growth furnace until the crystallization interface meets the target conditions.

[0172] In an alternative embodiment, step B23 of determining the third concave path along the width direction of the mold to be designed and the fourth concave path along the thickness direction of the mold to be designed according to the aspect ratio, the top edge of the mold to be designed, and the second concave position includes:

[0173] Step B231: When the aspect ratio is less than or equal to a preset parameter, taking the third edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, determine the third concave path along the width direction of the mold to be designed.

[0174] Step B232: Taking the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, determine the fourth concave path along the thickness direction of the mold to be designed.

[0175] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the crystallization interface is concave towards the gallium oxide crystal as a whole, and the aspect ratio of the mold to be designed is less than or equal to the preset parameter, the electronic device may execute steps B231 to B232 to determine the third concave path and the fourth concave path.

[0176] Wherein, the preset parameter is the aspect ratio threshold of the mold to be designed. When the aspect ratio of the mold to be designed is less than or equal to the preset parameter, it indicates that the gap between the width and thickness of the mold to be designed is relatively small. In this case, the top edge of the mold to be designed can be used as the starting position of the path, and the second concave position can be used as the ending position of the path. The third concave path is determined along the width direction of the mold to be designed, and the fourth concave path is determined along the thickness direction of the mold to be designed. The third concave path and the fourth concave path can be straight lines or curves respectively.

[0177] Specifically, the preset parameter can be 6. When the preset parameter is 6, the included angle between the intersection line of the third concave path and the fourth concave path and the first side of the mold to be designed is 10°. In the embodiments of the present invention, when the included angle between the intersection line of the third concave path and the fourth concave path and the first side of the mold to be designed is greater than or equal to 10°, it indicates that the aspect ratio is less than or equal to the preset parameter 6, and the electronic device executes steps B231 to B232 to determine the third concave path and the fourth concave path.

[0178] When the included angle between the intersection line of the third concave path and the fourth concave path and the first side of the mold to be designed is less than 10°, it indicates that the aspect ratio is greater than the preset parameter 6. When the aspect ratio of the mold to be designed is greater than the preset parameter, the gap between the width and thickness of the mold to be designed is relatively large. By executing steps B231 to B232 to determine the third concave path and the fourth concave path and performing secondary groove processing on the mold to be designed according to the third concave path and the fourth concave path, the improvement effect on the shape of the crystal interface is not obvious. In this scenario, the electronic device can execute steps B233 to B238 described below to determine the third concave path and the fourth concave path.

[0179] Refer to Figure 27 , the first side 41 is the side parallel to the width direction of the mold to be designed 121 in the mold to be designed 121.

[0180] In step B231, in some embodiments, refer to Figure 19 and Figure 20 , and Figure 22 and Figure 23 , the electronic device uses the third edge 23 of the mold to be designed 121 as the starting position of the path and the second concave position 002 as the ending position of the path, and determines the straight line formed by connecting the points on the third edge 23 and the second concave position 002 as the third concave path 33 along the width direction of the mold to be designed 121. Wherein, the third edge 23 is the top edge of the mold to be designed 121 in the thickness direction of the mold to be designed 121.

[0181] In some embodiments, taking the third edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, a curve with an increasingly larger angle between the line connecting the points on the third edge and the second concave position and the horizontal plane can be determined as the third concave path along the width direction of the mold to be designed.

[0182] In step B232, in some embodiments, with reference to Figure 19 and Figure 21 , and Figure 22 and Figure 24 , taking the fourth edge 24 of the mold 121 to be designed as the starting position of the path and the second concave position 002 as the ending position of the path, a straight line formed by connecting the points on the fourth edge 24 and the second concave position 002 can be determined as the fourth concave path 34 along the thickness direction of the mold 121 to be designed. Among them, the fourth edge 24 is the top edge of the mold 121 to be designed in the width direction of the mold 121 to be designed.

[0183] In some embodiments, taking the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, a curve with an increasingly larger angle between the line connecting the points on the fourth edge and the second concave position and the horizontal plane can be determined as the fourth concave path along the thickness direction of the mold to be designed.

[0184] It should be noted that since the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, after the secondary groove treatment of the mold to be designed according to the third concave path and the fourth concave path, the side structure schematic diagram of the mold to be designed after the secondary groove treatment is the same as that of the mold to be designed before the secondary groove treatment. Exemplarily, since the maximum distance between the top edge of the mold to be designed after the secondary groove treatment and the edge of the crystallization interface is equal to the target distance, according to the third concave path determined by step B231 and the fourth concave path determined by step B232, the mold to be designed is subjected to secondary groove treatment, and the side structure schematic diagram of the mold to be designed after the secondary groove treatment is the same as that of the mold to be designed before the secondary groove treatment. Exemplarily, in Figure 19 the side structure schematic diagram in the thickness direction of the mold 121 to be designed shown is the same as Figure 8 ; in Figure 22 the side structure schematic diagram in the thickness direction of the mold 121 to be designed shown is the same as Figure 11 .

[0185] In an alternative embodiment, step B23 of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the aspect ratio, the top edge of the mold to be designed, and the second concave position includes:

[0186] Step B233: When the aspect ratio is greater than a preset parameter, determine a third concave path along the width direction of the mold to be designed with the third edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path.

[0187] Step B234: Obtain a first included angle between the third concave path and the horizontal plane.

[0188] Step B235: Obtain a first projection distance of a first sub-concave path along the thickness direction of the mold to be designed in the thickness direction of the mold to be designed.

[0189] Step B236: Determine a third concave position according to the first included angle and the first projection distance.

[0190] Step B237: Determine a first sub-concave path along the thickness direction of the mold to be designed with the fourth edge of the mold to be designed as the starting position of the path and the third concave position as the ending position of the path.

[0191] Step B238: Determine a second sub-concave path along the thickness direction of the mold to be designed with the third concave position as the starting position of the path and the second concave position as the ending position of the path. The first sub-concave path and the second sub-concave path are connected to form a fourth concave path along the thickness direction of the mold to be designed.

[0192] In an embodiment of the present invention, when the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is equal to the target distance, the crystallization interface is concave towards the gallium oxide crystal as a whole, and the aspect ratio of the mold to be designed is greater than a preset parameter, the electronic device may execute steps B233 to B238 to determine the third concave path and the fourth concave path.

[0193] It can be understood that when the width-to-thickness ratio of the mold to be designed is greater than a preset parameter, it indicates that the gap between the width and thickness of the mold to be designed is relatively large. Directly using the straight line or curve formed by connecting the top edge of the mold to be designed and the second concave position as the third concave path and the fourth concave path has an insignificant improvement effect on the shape of the crystallization interface. In the embodiments of the present invention, the electronic device can determine the first concave sub-path and the second concave sub-path that make up the fourth concave path in segments through the operations corresponding to steps B234 to B238, so as to improve the improvement effect on the shape of the crystallization interface in the scenario where the width-to-thickness ratio of the mold to be designed is greater than the preset parameter.

[0194] Specifically, in step B233, with reference to Figure 26 , the electronic device can determine the third concave path 33 along the width direction of the mold 121 to be designed in the same or similar manner as in step B231. To avoid repetition, it will not be elaborated here.

[0195] After determining the third concave path through step B233, the electronic device can execute step B234 to obtain the first included angle between the third concave path and the horizontal plane. In some embodiments, when the third concave path 33 is a straight line with a constant included angle with the horizontal plane as shown in Figure 26 , the first included angle β1 is the included angle between this straight line and the horizontal plane; in other embodiments, when the third concave path is a curve with an increasing included angle with the horizontal plane, the first included angle can be the minimum value of the included angle between the third concave path and the horizontal plane; in still other embodiments, when the third concave path includes at least two concave sub-paths, the first included angle is the included angle between the first concave sub-path in the direction from the third edge to the second concave position along the third concave path and the horizontal plane.

[0196] In step B235, the first projection distance is the distance that the preset first concave sub-path extends from the edge of the mold to be designed into the interior of the mold to be designed, that is, the projection distance of the first concave sub-path in the thickness direction of the mold to be designed, and the first projection distance is less than the distance between the second concave position and the first side of the mold to be designed, where the first side is the side of the mold to be designed parallel to the width direction of the mold to be designed.

[0197] In step B236, with reference to Figure 25 and Figure 27 , the electronic device can determine the third concave position 003 from the mold 121 to be designed according to the first included angle β1 and the first projection distance. The concave depth of the third concave position 003 is less than the concave depth of the second concave position 002.

[0198] In step B237, with reference to Figure 25 andFigure 27 For the electronic device, with the fourth edge 24 of the to-be-designed mold 121 as the starting position of the path and the third concave position 003 as the ending position of the path, the connection line between the point on the third edge 23 and the point with the shortest straight-line distance to the third concave position 003 in the third concave position 003 can be determined as the first concave sub-path 341 along the thickness direction of the to-be-designed mold 121. It should be noted that the second included angle between the first concave sub-path 341 and the horizontal plane is equal to the first included angle β1, and when the second included angle β2 is equal to the first included angle β1, the included angle between the intersection line between the first concave sub-path 341 and the third concave path 33 and the first side 41 of the to-be-designed mold 121 is equal to 45°, and the included angle between the intersection line between the first concave sub-path 341 and the third concave path 33 and the second side 42 of the to-be-designed mold 121 is equal to 45°.

[0199] Refer to Figure 29 The second side 42 is the side of the to-be-designed mold 121 that is parallel to the thickness direction of the to-be-designed mold 121.

[0200] Among them, the third edge 23 is the top edge of the to-be-designed mold 121 in the thickness direction of the to-be-designed mold 121; the fourth edge 24 is the top edge of the to-be-designed mold 121 in the width direction of the to-be-designed mold 121.

[0201] In step B238, refer to Figure 25 and Figure 27 For the electronic device, with the third concave position 003 as the starting position of the path and the second concave position 002 as the ending position of the path, the connection line between the point with the minimum straight-line distance between the second concave position 002 and the third concave position 003 in the third concave position 003 can be determined as the second concave sub-path 342 along the thickness direction of the to-be-designed mold 121.

[0202] Refer to Figure 27 The second included angle β2 between the first concave sub-path 341 and the horizontal plane is smaller than the third included angle β3 between the second concave sub-path 342 and the horizontal plane.

[0203] It can be understood that the first concave sub-path determined by the electronic device through step B237 and the second concave sub-path determined by step B238 are connected through the third concave position to form the fourth concave path along the thickness direction of the to-be-designed mold.

[0204] In an optional embodiment, step B233, which determines the third concave path along the width direction of the to-be-designed mold with the third edge of the to-be-designed mold as the starting position of the path and the second concave position as the ending position of the path, includes:

[0205] Step B2331: Obtain the third expected concave depth of the third concave sub-path along the width direction of the to-be-designed mold and the second projection distance of the third concave sub-path in the width direction of the to-be-designed mold.

[0206] Step B2332: Determine the fourth concave position according to the third expected concave depth and the second projection distance.

[0207] Step B2333: With the third edge of the to-be-designed mold as the starting position of the path and the fourth concave position as the ending position of the path, determine the third concave sub-path along the width direction of the to-be-designed mold.

[0208] Step B2334: With the fourth concave position as the starting position of the path and the second concave position as the ending position of the path, determine the fourth concave sub-path along the width direction of the to-be-designed mold. The third concave sub-path and the fourth concave sub-path are connected to form the third concave path along the width direction of the to-be-designed mold.

[0209] In an embodiment of the present invention, when the maximum distance between the top edge of the to-be-designed mold and the edge of the crystallization interface is equal to the target distance, the crystallization interface is integrally concave towards the gallium oxide crystal, and the aspect ratio of the to-be-designed mold is greater than a preset parameter, when the electronic device determines the first concave sub-path and the second concave sub-path that constitute the third concave path in segments through steps B233 to B238, it can also determine the third concave sub-path and the fourth concave sub-path that constitute the fourth concave path in segments through steps B2331 to B2334, further improving the improvement effect on the shape of the crystallization interface in the scenario where the aspect ratio of the to-be-designed mold is greater than the preset parameter. Furthermore, it can more accurately and efficiently make the crystallization interface meet the target conditions by performing secondary groove processing on the to-be-designed mold, and obtain the target mold.

[0210] Specifically, in step B2331, referring to Figure 28 and Figure 29 , the third expected concave depth L3 is the depth that the third concave sub-path needs to be concave as preset in advance, and the third expected concave depth L3 needs to be less than the second expected concave depth L2.

[0211] The second projection distance is the distance that the third concave sub-path extends from the edge of the to-be-designed mold to the inside of the to-be-designed mold as preset in advance, that is, the projection distance of the third concave sub-path in the thickness direction of the to-be-designed mold, and the second projection distance is less than the distance between the second concave position and the second side of the to-be-designed mold. The second side is the side of the to-be-designed mold that is parallel to the thickness direction of the to-be-designed mold.

[0212] In step B2332, referring to Figure 28 andFigure 29 The electronic device may determine the line segment obtained by the intersection of the third expected concave depth L3 and the second projection distance in the to-be-designed mold 121 as the fourth concave position 004.

[0213] In step B2333, referring to Figure 28 and Figure 29 the electronic device may determine the connection line between the point on the third edge 23 of the to-be-designed mold 121 and the point with the shortest straight-line distance in the fourth concave position 004 as the third sub-concave path 331 along the width direction of the to-be-designed mold 121, with the third edge 23 of the to-be-designed mold 121 as the starting position of the path and the fourth concave position 004 as the ending position of the path.

[0214] In step B2334, referring to Figure 28 and Figure 29 the electronic device may determine the connection line between the second concave position 002 and the point with the shortest straight-line distance in the fourth concave position 004 as the fourth sub-concave path 332 along the width direction of the to-be-designed mold 121, with the fourth concave position 004 as the starting position of the path and the second concave position 002 as the ending position of the path.

[0215] Referring to Figure 28 and Figure 29 the fourth included angle β4 between the third sub-concave path 331 and the horizontal plane is less than the fifth included angle β5 between the fourth sub-concave path 332 and the horizontal plane; the fourth included angle β4 is equal to the second included angle β2 and the fifth included angle β5 is less than the third included angle β3.

[0216] It can be understood that the third sub-concave path determined by the electronic device through step B2333 and the fourth sub-concave path determined by step B2334 are connected through the fourth concave position to form the third concave path along the width direction of the to-be-designed mold.

[0217] In an alternative embodiment, determining whether the crystallization interface meets the target conditions in step S103 includes:

[0218] Step C11, determining the shape of the crystallization interface and the positional relationship between the crystallization interface and the to-be-designed mold.

[0219] Step C12, determining that the crystallization interface adheres to the to-be-designed mold when the positional relationship indicates that there is an intersection between the crystallization interface and the top of the to-be-designed mold.

[0220] Step C13, determining that the crystallization interface does not meet the target conditions when the shape of the crystallization interface meets the first shape or the crystallization interface adheres to the to-be-designed mold.

[0221] Step C14: When the shape of the crystallization interface satisfies the second shape and the crystallization interface is not adhered to the mold to be designed, it is determined that the crystallization interface meets the target conditions.

[0222] In the embodiments of the present invention, in the process of determining whether the crystallization interface meets the target conditions, the electronic device can be implemented through the operations corresponding to steps C11 to C14, which improves the feasibility and flexibility of the implementation process of the embodiments of the present invention.

[0223] Among them, the first shape is a preset crystallization interface shape that affects the stability of crystal growth. The first shape includes any one of the middle region of the crystallization interface protruding towards the mold to be designed and the edge region concave towards the gallium oxide crystal (i.e., the shape of the crystallization interface is "m" type), the crystallization interface as a whole concave towards the gallium oxide crystal (i.e., the shape of the crystallization interface is "n" type), and the crystallization interface being a plane.

[0224] The second shape is a preset crystallization interface shape that does not affect the stability of crystal growth. The second shape includes the crystallization interface protruding towards the mold to be designed as a whole.

[0225] Specifically, in step C11, the electronic device can match the crystallization interface determined in step S101 with the preset crystallization interface shapes included in the first shape and the second shape, and determine the preset crystallization interface shape that matches the crystallization interface determined in step S101 as the shape of the crystallization interface determined in step S101.

[0226] In addition, in step C11, the electronic device can determine the vertical distance between each point on the top edge of the mold to be designed and the crystallization interface determined in step S101, and determine the vertical distance between each point on the top edge of the mold to be designed and the crystallization interface determined in step S101 as the positional relationship between the crystallization interface and the mold to be designed.

[0227] Among them, in the vertical distances between each point on the top edge of the mold to be designed and the crystallization interface determined in step S101, when there is at least one vertical distance equal to 0, the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed; when the vertical distances between each point on the top edge of the mold to be designed and the crystallization interface determined in step S101 are all greater than 0, the positional relationship indicates that there is no intersection between the crystallization interface and the top of the mold to be designed.

[0228] When the positional relationship indicates that there is no intersection between the crystallization interface and the top of the mold to be designed, the electronic device can determine that the crystallization interface is not adhered to the mold to be designed; when the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed, the electronic device can execute step C12 to determine that the crystallization interface is adhered to the mold to be designed.

[0229] When the shape of the crystallization interface determined in step S101 matches any of the preset crystallization interface shapes included in the first shape, it is determined that the shape of the crystallization interface meets the first shape; when the shape of the crystallization interface determined in step S101 matches the preset crystallization interface shape included in the second shape, it is determined that the shape of the crystallization interface meets the second shape.

[0230] Specifically, when the shape of the crystallization interface meets the first shape, or when the crystallization interface adheres to the mold to be designed, the electronic device executes step C13 to determine that the crystallization interface does not meet the target conditions.

[0231] When the shape of the crystallization interface meets the second shape and the crystallization interface does not adhere to the mold to be designed, the electronic device executes step C14 to determine that the crystallization interface meets the target conditions.

[0232] In an alternative embodiment, when the shape of the crystallization interface meets the second shape, the crystallization interface adheres to the mold to be designed and the maximum distance is less than the target distance, the electronic device can execute the one-time groove processing method described in any of the above to increase the concave depth at the top of the mold to be designed until the crystallization interface does not adhere to the mold to be designed, or the maximum distance between the top edge of the mold to be designed after one-time groove processing and the edge of the crystallization interface is equal to the target distance.

[0233] When the shape of the crystallization interface meets the second shape, the crystallization interface adheres to the mold to be designed and the maximum distance is equal to the target distance, the electronic device can execute the two-time groove processing method described in any of the above to increase the concave depth at the top of the mold to be designed until the crystallization interface does not adhere to the mold to be designed.

[0234] As an example, the crystallization interface adheres to the mold to be designed and the maximum distance is equal to the target distance. Refer to Figure 30 and Figure 31 , Figure 30 is the mold to be designed obtained by performing two-time groove processing on the basis of the mold to be designed shown in Figures 9 to 11 . Figure 31 is a schematic cross-sectional structure diagram along the width direction of the mold to be designed 121 shown in Figure 30 , and the schematic side structure diagram along the thickness direction of the mold to be designed 121 shown in Figure 30 is the same as Figure 11 .

[0235] In an alternative embodiment, when the shape of the crystallization interface is planar, ideally it will not cause instability in the crystal growth process. However, in actual application scenarios, the shape of the crystallization interface is in a state of real-time change. When the shape of the crystallization interface is planar, as the crystal growth process progresses, the probability that the shape of the crystallization interface changes to an "m" shape or an "n" shape is relatively high, resulting in a decrease in the stability of the crystal growth process.

[0236] In the embodiment of the present invention, when the shape of the crystallization interface is planar and the maximum distance is less than the target distance, the electronic device can perform the one-time groove processing method described in any of the above to increase the concave depth of the top of the mold to be designed, so that the shape of the crystallization interface meets the second shape, which is beneficial to improving the stability of the crystal growth process and the crystal growth quality of the grown gallium oxide crystal.

[0237] In the case where the shape of the crystallization interface is planar and the maximum distance is equal to the target distance, the electronic device can perform the two-time groove processing method described in any of the above to increase the concave depth of the top of the mold to be designed, so that the shape of the crystallization interface meets the second shape, which is beneficial to improving the stability of the crystal growth process and the crystal growth quality of the grown gallium oxide crystal.

[0238] In summary, the mold design method for growing gallium oxide crystals by the guiding mold method provided in the embodiment of the present invention, on the premise that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface is less than or equal to the target distance, increases the depression degree of the top of the mold to be designed through one-time groove processing and two-time groove processing so that the crystallization interface meets the target conditions, avoiding the problem of decreased crystal growth stability caused by the crystallization interface concave towards the gallium oxide crystal. Further, the embodiment of the present invention also avoids the problem of detachment between the gallium oxide melt and the gallium oxide crystal caused by the excessive distance between the top edge of the mold to be designed and the edge of the crystallization interface, improves the stability of the crystal growth process of growing gallium oxide crystals using a crystal growth furnace including the target mold, and further improves the crystal growth quality of the grown gallium oxide crystal.

[0239] Device embodiment

[0240] Refer to Figure 32 , which shows a logic block diagram of a mold design device for growing gallium oxide crystals by the guiding mold method provided in the embodiment of the present invention. The device may include:

[0241] A first determination module 201, configured to determine the crystallization interface corresponding to the gallium oxide crystal based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown using the crystal growth furnace; the crystallization interface is the solid-liquid interface between the gallium oxide crystal and the gallium oxide melt at the top of the mold to be designed;

[0242] An acquisition module 202, configured to acquire the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface;

[0243] A second determination module 203, configured to determine whether the crystallization interface meets a target condition; the target condition is that the crystallization interface bulges towards the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed;

[0244] A first processing module 204, configured to, when the maximum distance is less than a target distance and the crystallization interface does not meet the target condition, perform a first groove processing on the mold to be designed according to the target distance, so that the maximum distance between the top edge of the mold to be designed after the first groove processing and the edge of the crystallization interface is equal to the target distance and / or the crystallization interface meets the target condition;

[0245] A second processing module 205, configured to, when the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, perform a second groove processing on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed after the second groove processing and the edge of the crystallization interface is equal to the target distance.

[0246] A third determination module 206, configured to, when the maximum distance is less than or equal to the target distance and the crystallization interface meets the target condition, determine the mold to be designed as a target mold.

[0247] Optionally, the second processing module includes:

[0248] A first acquisition sub-module, configured to, when the maximum distance is equal to the target distance, the middle region of the crystallization interface bulges towards the mold to be designed, and the edge region of the crystallization interface concaves towards the gallium oxide crystal, acquire the width value of the edge region;

[0249] A first determination sub-module, configured to determine a first concave position corresponding to the edge region from the mold to be designed according to the width value, the first expected concave depth of the second groove processing, and the target plane where the capillary slit is located in the mold to be designed;

[0250] A second determination sub-module, configured to determine a connection path between the first concave positions in the mold to be designed;

[0251] A third determination sub-module, configured to determine a first concave path corresponding to the edge region according to the first edge of the mold to be designed and the first concave position corresponding to the edge region; the first edge is the top edge corresponding to the edge region in the mold to be designed.

[0252] A fourth determination sub-module, configured to determine a second concave path corresponding to the intermediate region according to the second edge of the mold to be designed and the connection path; the second edge is the top edge corresponding to the intermediate region in the mold to be designed.

[0253] A first processing sub-module, configured to perform a secondary groove processing on the mold to be designed according to the first concave path and the second concave path.

[0254] Optionally, along the direction from the first edge to the position where the first concave position is located, the angle between the first concave path and the horizontal plane remains unchanged or gradually increases.

[0255] Along the direction from the second edge to the position where the connection path is located, the angle between the second concave path and the horizontal plane remains unchanged or gradually increases.

[0256] Optionally, the second processing module includes:

[0257] A second acquisition sub-module, configured to obtain the ratio of the width to the thickness of the mold to be designed to obtain a width-to-thickness ratio when the maximum distance is equal to the target distance and the crystallization interface is concave towards the gallium oxide crystal as a whole.

[0258] A fifth determination sub-module, configured to determine a second concave position according to the second expected concave depth of the secondary groove processing, the target plane where the capillary slit is located in the mold to be designed, and the position of the highest point of the crystallization interface.

[0259] A sixth determination sub-module, configured to determine a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed, and the second concave position.

[0260] A second processing sub-module, configured to perform a secondary groove processing on the mold to be designed according to the third concave path and the fourth concave path.

[0261] Optionally, the sixth determination sub-module includes:

[0262] A first determination unit, configured to, when the aspect ratio is less than or equal to a preset parameter, use the third edge of the to-be-designed mold as the path starting position and the second concave position as the path ending position to determine a third concave path along the width direction of the to-be-designed mold; the third edge is the top edge of the to-be-designed mold in the thickness direction of the to-be-designed mold;

[0263] A second determination unit, configured to use the fourth edge of the to-be-designed mold as the path starting position and the second concave position as the path ending position to determine a fourth concave path along the thickness direction of the to-be-designed mold; the fourth edge is the top edge of the to-be-designed mold in the width direction of the to-be-designed mold.

[0264] Optionally, the sixth determination sub-module includes:

[0265] A third determination unit, configured to, when the aspect ratio is greater than the preset parameter, use the third edge of the to-be-designed mold as the path starting position and the second concave position as the path ending position to determine a third concave path along the width direction of the to-be-designed mold; the third edge is the top edge of the to-be-designed mold in the thickness direction of the to-be-designed mold;

[0266] A first acquisition unit, configured to acquire a first angle between the third concave path and the horizontal plane;

[0267] A second acquisition unit, configured to acquire a first projection distance of a first concave sub-path along the thickness direction of the to-be-designed mold in the thickness direction of the to-be-designed mold; the first projection distance is less than the minimum distance between the second concave position and the first side of the to-be-designed mold, and the first side is the side of the to-be-designed mold parallel to the width direction of the to-be-designed mold;

[0268] A fourth determination unit, configured to determine a third concave position according to the first angle and the first projection distance;

[0269] A fifth determination unit, configured to use the fourth edge of the to-be-designed mold as the path starting position and the third concave position as the path ending position to determine a first concave sub-path along the thickness direction of the to-be-designed mold; the fourth edge is the top edge of the to-be-designed mold in the width direction of the to-be-designed mold; the second angle between the first concave sub-path and the horizontal plane is equal to the first angle;

[0270] A sixth determination unit is configured to determine a second concave sub-path along the thickness direction of the to-be-designed mold, with the third concave position as the starting position of the path and the second concave position as the ending position of the path. The first concave sub-path and the second concave sub-path are connected to form a fourth concave path along the thickness direction of the to-be-designed mold; the second included angle is smaller than the third included angle between the second concave sub-path and the horizontal plane.

[0271] Optionally, the third determination unit includes:

[0272] An acquisition subunit is configured to acquire a third expected concave depth of the third concave sub-path along the width direction of the to-be-designed mold and a second projected distance of the third concave sub-path in the width direction of the to-be-designed mold; the third expected concave depth is smaller than the second expected concave depth, and the second projected distance is smaller than the minimum distance between the second concave position and the second side of the to-be-designed mold, where the second side is the side of the to-be-designed mold parallel to the thickness direction of the to-be-designed mold;

[0273] A first determination subunit is configured to determine a fourth concave position according to the third expected concave depth and the second projected distance;

[0274] A second determination subunit is configured to determine a third concave sub-path along the width direction of the to-be-designed mold, with the third edge of the to-be-designed mold as the starting position of the path and the fourth concave position as the ending position of the path;

[0275] A third determination subunit is configured to determine a fourth concave sub-path along the width direction of the to-be-designed mold, with the fourth concave position as the starting position of the path and the second concave position as the ending position of the path. The third concave sub-path and the fourth concave sub-path are connected to form a third concave path along the width direction of the to-be-designed mold; the fourth included angle between the third concave sub-path and the horizontal plane is smaller than the fifth included angle between the fourth concave sub-path and the horizontal plane, the fourth included angle is equal to the second included angle, and the fifth included angle is smaller than the third included angle.

[0276] Optionally, the second determination module includes:

[0277] A seventh determination sub-module is configured to determine the shape of the crystal interface and the positional relationship between the crystal interface and the to-be-designed mold;

[0278] An eighth determination sub-module is configured to determine that the crystal interface adheres to the to-be-designed mold when the positional relationship indicates that there is an intersection between the crystal interface and the top of the to-be-designed mold;

[0279] A ninth determination sub-module, configured to determine that the crystallization interface does not meet the target condition when the shape of the crystallization interface meets the first shape or when the crystallization interface adheres to the mold to be designed;

[0280] A tenth determination sub-module, configured to determine that the crystallization interface meets the target condition when the shape of the crystallization interface meets the second shape and the crystallization interface does not adhere to the mold to be designed;

[0281] Wherein, the first shape includes any one of the middle region of the crystallization interface bulging towards the mold to be designed and the edge region concaving towards the gallium oxide crystal, the crystallization interface as a whole concaving towards the gallium oxide crystal, and the crystallization interface being a plane;

[0282] The second shape includes the crystallization interface bulging towards the mold to be designed as a whole.

[0283] For the apparatus embodiment, since it is basically similar to the method embodiment, the description is relatively simple. For the relevant parts, refer to the partial description of the method embodiment.

[0284] An embodiment of the present invention further provides a mold, which is designed by the mold design method for growing gallium oxide crystals by the guiding mold method as described in any one of the above.

[0285] An embodiment of the present invention further provides a crystal growth furnace, which includes the mold as described above.

[0286] Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0287] An embodiment of the present invention further provides an electronic device, including a memory and a processor. The memory is used to store a computer program, and the processor is used to implement the mold design method for growing gallium oxide crystals by the guiding mold method as described above when executing the computer program.

[0288] An embodiment of the present application further provides a readable storage medium, which stores a computer program. When the computer program is executed by a processor, it implements the mold design method for growing gallium oxide crystals by the guiding mold method as described above.

[0289] Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts among the embodiments, reference can be made to each other.

[0290] Although the preferred embodiments of the embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concept. Therefore, the appended claims are intended to be construed to include the preferred embodiments and all changes and modifications falling within the scope of the embodiments of the present invention.

[0291] Finally, it should also be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or terminal device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the existence of additional identical elements in the process, method, article or terminal device comprising the element.

[0292] The above has introduced in detail a method for designing a mold, a mold and a growth furnace for growing gallium oxide crystals by the guiding mode method provided by the present invention. Specific examples are used in this text to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A mold design method for growing gallium oxide crystals by guided mode method, characterized in that: The method comprises: Based on a crystal growth furnace including a mold to be designed and a gallium oxide crystal grown by the crystal growth furnace, determining a crystallization interface corresponding to the gallium oxide crystal; the crystallization interface is a solid-liquid interface between the gallium oxide crystal and a gallium oxide melt at the top of the mold to be designed; Obtaining the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface; the maximum distance is the maximum value of the vertical distance between the top edge of the mold to be designed and the edge of the crystallization interface; Determine whether the crystallization interface meets the target condition; the target condition is that the crystallization interface is convex to the mold to be designed as a whole and the crystallization interface is not adhered to the mold to be designed; When the maximum distance is less than the target distance and the crystallization interface does not meet the target condition, the mold to be designed is subjected to a groove treatment according to the target distance, so that the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the groove treatment is equal to the target distance and / or the crystallization interface meets the target condition; the target distance is the limit distance between the top of the mold to be designed and the crystallization interface when the surface tension and gravity of the gallium oxide melt are balanced; When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface until the crystallization interface meets the target condition; the maximum distance between the top edge of the mold to be designed and the edge of the crystallization interface after the secondary groove processing is equal to the target distance; When the maximum distance is less than or equal to the target distance and the crystallization interface satisfies the target condition, the mold to be designed is determined as a target mold.

2. The method according to claim 1, characterized in that When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: When the maximum distance is equal to the target distance, the middle area of ​​the crystallization interface is convex toward the mold to be designed, and the edge area of ​​the crystallization interface is concave toward the gallium oxide crystal, obtaining a width value of the edge area; Determine a first concave position corresponding to the edge region from the mold to be designed according to the width value, the first expected concave depth of the secondary groove treatment, and the target plane where the capillary slit in the mold to be designed is located; Determining a connection path between the mold to be designed and the first concave position; Determine a first concave path corresponding to the edge area according to a first edge of the mold to be designed and a first concave position corresponding to the edge area; the first edge is a top edge of the mold to be designed corresponding to the edge area; Determine a second concave path corresponding to the middle area according to the second edge of the mold to be designed and the connecting path; the second edge is the top edge of the mold to be designed corresponding to the middle area; The mold to be designed is subjected to secondary groove processing according to the first concave path and the second concave path.

3. The method according to claim 2, characterized in that Along the direction from the first edge to the first concave position, the angle between the first concave path and the horizontal plane remains unchanged or gradually increases; Along the direction from the second edge to the connecting path, the angle between the second concave path and the horizontal plane remains unchanged or gradually increases.

4. The method according to claim 1, characterized in that: When the maximum distance is equal to the target distance and the crystallization interface does not meet the target condition, performing secondary groove processing on the mold to be designed according to the crystallization interface includes: When the maximum distance is equal to the target distance and the crystallization interface is entirely concave toward the gallium oxide crystal, obtaining a ratio of a width to a thickness of the mold to be designed to obtain a width-to-thickness ratio; Determining the second concave position according to the second expected concave depth of the secondary groove treatment, the target plane where the capillary slit in the mold to be designed is located, and the position of the highest point of the crystallization interface; Determine a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position; The mold to be designed is subjected to secondary groove processing according to the third concave path and the fourth concave path.

5. The method according to claim 4, characterized in that The step of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position comprises: When the width-to-thickness ratio is less than or equal to a preset parameter, a third concave path along the width direction of the mold to be designed is determined with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; Taking the fourth edge of the mold to be designed as the starting position of the path and the second concave position as the ending position of the path, determine the fourth concave path along the thickness direction of the mold to be designed; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed.

6. The method according to claim 4, characterized in that The step of determining a third concave path along the width direction of the mold to be designed and a fourth concave path along the thickness direction of the mold to be designed according to the width-to-thickness ratio, the top edge of the mold to be designed and the second concave position comprises: In the case where the width-to-thickness ratio is greater than a preset parameter, a third concave path along the width direction of the mold to be designed is determined with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position; the third edge is the top edge of the mold to be designed in the thickness direction of the mold to be designed; Acquire a first angle between the third concave path and a horizontal plane; Acquire a first projection distance of a first concave sub-path along the thickness direction of the mold to be designed in the thickness direction of the mold to be designed; the first projection distance is less than a minimum distance between the second concave position and a first side edge of the mold to be designed, the first side edge being a side edge of the mold to be designed that is parallel to the width direction of the mold to be designed; determining a third concave position according to the first angle and the first projection distance; Taking the fourth edge of the mold to be designed as the path starting position and the third concave position as the path ending position, a first concave sub-path along the thickness direction of the mold to be designed is determined; the fourth edge is the top edge of the mold to be designed in the width direction of the mold to be designed; the second angle between the first concave sub-path and the horizontal plane is equal to the first angle; Taking the third concave position as the path starting position and the second concave position as the path ending position, a second concave sub-path along the thickness direction of the mold to be designed is determined, and the first concave sub-path and the second concave sub-path are connected to form a fourth concave path along the thickness direction of the mold to be designed; the second angle is smaller than the third angle between the second concave sub-path and the horizontal plane.

7. The method according to claim 6, characterized in that The method of determining a third concave path along the width direction of the mold to be designed with the third edge of the mold to be designed as the path starting position and the second concave position as the path ending position comprises: Acquire a third expected concave depth of a third concave subpath along the width direction of the mold to be designed and a second projection distance of the third concave subpath in the width direction of the mold to be designed; the third expected concave depth is less than the second expected concave depth, and the second projection distance is less than a minimum distance between the second concave position and a second side edge of the mold to be designed, wherein the second side edge is a side edge of the mold to be designed that is parallel to the thickness direction of the mold to be designed; determining a fourth concave position according to the third expected concave depth and the second projection distance; Taking the third edge of the mold to be designed as the path starting position and the fourth concave position as the path ending position, determining a third concave sub-path along the width direction of the mold to be designed; Taking the fourth concave position as the path starting position and the second concave position as the path ending position, a fourth concave sub-path along the width direction of the mold to be designed is determined, and the third concave sub-path and the fourth concave sub-path are connected to form a third concave path along the width direction of the mold to be designed; a fourth angle between the third concave sub-path and the horizontal plane is smaller than a fifth angle between the fourth concave sub-path and the horizontal plane, the fourth angle is equal to the second angle and the fifth angle is smaller than the third angle.

8. The method according to claim 1, characterized in that: The determining whether the crystallization interface meets the target condition comprises: Determining the shape of the crystallization interface and the positional relationship between the crystallization interface and the mold to be designed; When the positional relationship indicates that there is an intersection between the crystallization interface and the top of the mold to be designed, determining that the crystallization interface is adhered to the mold to be designed; When the shape of the crystallization interface satisfies the first shape, or the crystallization interface is adhered to the mold to be designed, determining that the crystallization interface does not satisfy the target condition; When the shape of the crystallization interface satisfies the second shape and the crystallization interface is not adhered to the mold to be designed, determining that the crystallization interface satisfies the target condition; The first shape includes any one of the following: the middle region of the crystallization interface is convex toward the mold to be designed and the edge region is concave toward the gallium oxide crystal, the entire crystallization interface is concave toward the gallium oxide crystal, and the crystallization interface is a plane; The second shape includes the crystallization interface being entirely convex toward the mold to be designed.

9. A mold, characterized in that: The mold is designed by the mold design method for growing gallium oxide crystal by the guided mode method as claimed in any one of claims 1 to 8.

10. A crystal growth furnace, characterized in that: The crystal growth furnace includes the mold according to claim 9.

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