Low-layer-number one-dimensional infrared low-emissivity film system structure insensitive to polarization and incidence angle

Abstract

The invention relates to a low-layer-number one-dimensional infrared low-emissivity film system structure insensitive to polarization and an incident angle. According to the technical scheme, the low-layer one-dimensional infrared low-emissivity film system structure is formed by compounding a one-dimensional lambda / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure, and the tail layer of the one-dimensional lambda / 4 periodic photonic crystal structure is connected with the top layer of the quasi-periodic photonic crystal structure. The structure of the low-layer-number one-dimensional infrared low-emissivity film system is expressed by the following formula: (AB) 2 (CD) 5, wherein (AB) 2 represents a one-dimensional lambda / 4 periodic photonic crystal structure, and (AB) represents a sub-periodic photonic crystal structure formed by sequentially arranging Ge and ZnO; (CD) 5 represents a quasi-periodic photonic crystal structure, and (CD) represents a sub-quasi-periodic photonic crystal structure formed by sequentially arranging Ge and ZnO. The dual-band low-emission antenna has the advantages of being small in layer number, short in production period, high in reliability, capable of achieving dual-band low emission and insensitive to polarization and incidence angles.

Description

Technical Field

[0001] The present invention belongs to the technical field of low-layer one-dimensional infrared low-emissivity film system structure, and specifically relates to a low-layer one-dimensional infrared low-emissivity film system structure which is insensitive to polarization and incident angle. Background Art

[0002] Light in the infrared band is an electromagnetic wave that cannot be observed by the human eye, but infrared detectors can detect and track targets by detecting infrared radiation emitted by target objects. At present, military equipment with infrared detection functions have been used by various combat platforms on land, sea and air, and it is of great significance to quickly control the battlefield situation. Therefore, infrared detection technology is indispensable in modern warfare. With the widespread use of infrared detection technology, infrared low-emissivity materials have also attracted the attention of technicians.

[0003] For example, Liu et al. (Liu Y, Li H, Tong H, et al. Rational design and construction of [Si / SiO 2 ] N one-dimensional photonic crystal for low infrared emissivityandvisible light camouflage[J].Optics and Lasers in Engineering, 2023,168:107673.) conducted research on Si / SiO 2 Theoretical and experimental studies on one-dimensional photonic crystals. 2 ] N The average reflectivity of photonic crystals in the 3-5 μm band can reach 95.23%. However, it does not achieve the high reflectivity of photonic crystal structures in the 8-14 μm band, and the working band is single.

[0004] For example, the patented technology of "one-dimensional metal-enhanced film structure with low number of layers and high reflection in the far infrared" (CN 108873111 A) uses a one-dimensional metal-enhanced film structure with a total of 23 layers, which can simultaneously achieve high reflection in the infrared bands of 3-5μm and 8-14μm. Although the superposition of photonic crystals can simultaneously achieve high infrared and high reflection characteristics in the 3-5μm and 8-14μm bands, this generally requires the design of a film structure with more than 20 layers, resulting in a long production cycle and reduced reliability.

[0005] For example, Jiang et al. (Jiang X, Yuan H, He X, et al. Implementing of infrared camouflage with thermal management based on inverse design and hierarchical metamaterial [J]. Nanophotonics, 2023, 5 (10): 1891-1902) proposed a method of using SiO 2 The multilayer film structure consists of five materials: Ge, ZnS, Pt and Au. When the TM polarization angle is 60°, SiO 2 The reflectivity of the multilayer film structure composed of Ge, ZnS, Pt and Au at 12.5μm is about 40%, and good polarization insensitivity is not achieved.

[0006] In summary, the prior art has the following technical defects: many layers, long production cycle, low reliability, single working band, and generally low emissivity films do not have the characteristics of being insensitive to polarization and incident angle. Summary of the invention

[0007] The present invention aims to overcome the defects of the prior art and aims to provide a low-layer one-dimensional infrared low-emissivity film structure with few layers, short production cycle, high reliability and insensitivity to polarization and incident angle that can achieve dual-band low emission.

[0008] To achieve the above object, the technical solution adopted by the present invention is:

[0009] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0010] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0011] (AB) 2 (CD) 5 (1) In formula (1):

[0012] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0013] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0014] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0015] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0016] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0017] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0018] The A indicates that the material is Ge and the thickness is 200-250 nm.

[0019] The B indicates that the material is ZnO and the thickness is 500-550 nm.

[0020] The C indicates that the material is Ge and the thickness is 600-900 nm.

[0021] The D indicates that the material is ZnO and the thickness is 1100-1800 nm.

[0022] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0023] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 200-250nm, 500-550nm, 220-250nm and 500-550nm respectively. The sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 700-800nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1400-1600nm.

[0024] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are stacked from top to bottom in the order of the first layer, the second layer, the third layer and the fourth layer.

[0025] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thickness of Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 600-700nm, 1100-1200nm, 700-740nm, 1200-1250nm, 750-780nm, 1300nm, 800-830nm, 1450-1500nm, 850-900nm, 1600-1800nm ​​respectively. The sum of the thickness of Ge3 layer and ZnO3 layer of the one sub-quasi-periodic photonic crystal structure is 1700-1850nm, and the sum of the thickness of Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10510-10850nm.

[0026] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0027] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0028] The average emissivity at 3-5 μm can be between 0.018 and 0.045 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.024 and 0.054 when TE polarization is used.

[0029] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.025 and 0.130, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.040 and 0.080.

[0030] Due to the adoption of the above technical solution, the present invention has the following positive effects compared with the prior art:

[0031] The one-dimensional λ / 4 periodic photonic crystal structure in the present invention is composed of a semiconductor material (Ge, with a refractive index of about 4.2) and an oxide material (ZnO, with a refractive index of about 1.7). The sum of the thicknesses of the Ge layer and the ZnO layer of a sub-periodic photonic crystal structure is 700-800nm. The number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4, and a low emissivity in the mid-infrared band of 3-5μm is achieved by using fewer thin film layers.

[0032] The quasi-periodic photonic crystal structure in the present invention is composed of a semiconductor material (Ge, with a refractive index of about 4.2) and an oxide material (ZnO, with a refractive index of about 1.7). The sum of the thicknesses of the Ge layer and the ZnO layer of a sub-quasi-periodic photonic crystal structure is between 1700 and 2700 nm. The quasi-periodic photonic crystal structure has 10 layers, which is a small number of layers. While being compatible with low emission in the mid-infrared band of 3 to 5 μm, it can achieve low emissivity in the far-infrared band of 8 to 14 μm, further realizing dual-band low emission.

[0033] The low-layer one-dimensional infrared low-emissivity film system structure of the present invention has 14 layers, which can shorten the production cycle of the coating process, reduce production costs, and improve product reliability.

[0034] The present invention is simulated by electromagnetic field simulation software CST. When the incident light angle is 0-60 degrees, the TE polarization can achieve an average emissivity between 0.018 and 0.045 at 3-5 μm, and the TE polarization can achieve an average emissivity between 0.024 and 0.054 at 8-14 μm; the TM polarization can achieve an average emissivity between 0.025 and 0.130 at 3-5 μm; and the TM polarization can achieve an average emissivity between 0.040 and 0.080 at 8-14 μm, thereby achieving polarization insensitivity to the incident angle.

[0035] Therefore, the present invention has the characteristics of less layers, short production cycle, high reliability, ability to achieve dual-band low emission and insensitivity to polarization and incident angle. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is an infrared reflectivity spectrum of a low-layer one-dimensional infrared low-emissivity film structure of the present invention that is insensitive to polarization and incident angle when incident light is incident in the positive direction;

[0037] Figure 2 for Figure 1 The infrared emissivity spectrum of the low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle when the incident light is incident in the positive direction. DETAILED DESCRIPTION

[0038] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments, which are not intended to limit the scope of use of the present invention.

[0039] A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle.

[0040] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0041] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0042] (AB) 2 (CD) 5 (1) In formula (1):

[0043] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0044] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0045] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0046] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0047] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0048] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0049] The A indicates that the material is Ge and the thickness is 200-250 nm.

[0050] The B indicates that the material is ZnO and the thickness is 500-550 nm.

[0051] The C indicates that the material is Ge and the thickness is 600-900 nm.

[0052] The D indicates that the material is ZnO and the thickness is 1100-1800 nm.

[0053] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0054] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 200-250nm, 500-550nm, 220-250nm and 500-550nm respectively; the sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 700-800nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1400-1600nm.

[0055] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are formed by stacking the first layer, the second layer, the third layer and the fourth layer in order from top to bottom.

[0056] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thickness of Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 600-700nm, 1100-1200nm, 700-740nm, 1200-1250nm, 750-780nm, 1300nm, 800-830nm, 1450-1500nm, 850-900nm, 1600-1800nm ​​respectively. The sum of the thickness of Ge3 layer and ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1700-1850nm, and the sum of the thickness of Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10510-10850nm.

[0057] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0058] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0059] The average emissivity at 3-5 μm can be between 0.018 and 0.045 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.024 and 0.054 when TE polarization is used.

[0060] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.025 and 0.130, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.040 and 0.080.

[0061] Example 1

[0062] A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle. The film structure described in this embodiment is:

[0063] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0064] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0065] (AB) 2 (CD) 5 (1) In formula (1):

[0066] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0067] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0068] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0069] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0070] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0071] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0072] The A indicates that the material is Ge and the thickness is 220 nm.

[0073] The B indicates that the material is ZnO and the thickness is 520 nm.

[0074] The C indicates that the material is Ge and the thickness is 650 nm.

[0075] The D indicates that the material is ZnO and the thickness is 1200 nm.

[0076] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0077] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 220nm, 520nm, 220nm and 520nm respectively. The sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 740nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1480nm.

[0078] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are formed by stacking the first layer, the second layer, the third layer and the fourth layer in order from top to bottom.

[0079] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 650nm, 1200nm, 700nm, 1250nm, 750nm, 1300nm, 800nm, 1500nm, 900nm and 1800nm ​​respectively. The sum of the thicknesses of the Ge3 layer and the ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1850nm, and the sum of the thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10850nm.

[0080] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0081] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0082] The average emissivity at 3-5 μm can be between 0.020 and 0.026 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.027 and 0.040 when TE polarization is used.

[0083] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.025 and 0.125, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.040 and 0.072.

[0084] Example 2

[0085] A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle. The film structure described in this embodiment is:

[0086] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0087] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0088] (AB) 2 (CD) 5 (1) In formula (1):

[0089] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0090] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0091] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0092] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0093] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0094] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0095] The A indicates that the material is Ge and the thickness is 200 nm.

[0096] The B indicates that the material is ZnO and the thickness is 500 nm.

[0097] The C indicates that the material is Ge and the thickness is 700 nm.

[0098] The D indicates that the material is ZnO and the thickness is 1100 nm.

[0099] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0100] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 200nm, 500nm, 200nm and 500nm respectively. The sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 700nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1400nm.

[0101] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are formed by stacking the first layer, the second layer, the third layer and the fourth layer in order from top to bottom.

[0102] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 700nm, 1100nm, 740nm, 1200nm, 770nm, 1300nm, 810nm, 1500nm, 850nm and 1600nm respectively. The sum of the thicknesses of the Ge3 layer and the ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1800nm, and the sum of the thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10570nm.

[0103] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0104] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0105] The average emissivity at 3-5 μm can be between 0.021 and 0.034 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.024 and 0.044 when TE polarization is used.

[0106] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.034 and 0.125, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.045 and 0.077.

[0107] Example 3

[0108] A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle. The film structure described in this embodiment is:

[0109] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0110] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0111] (AB) 2 (CD) 5 (1) In formula (1):

[0112] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0113] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0114] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0115] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0116] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0117] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0118] The A indicates that the material is Ge and the thickness is 230 nm.

[0119] The B indicates that the material is ZnO and the thickness is 540 nm.

[0120] The C indicates that the material is Ge and the thickness is 600 nm.

[0121] The D indicates that the material is ZnO and the thickness is 1100 nm.

[0122] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0123] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 230nm, 540nm, 230nm and 540nm respectively. The sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 770nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1540nm.

[0124] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are formed by stacking the first layer, the second layer, the third layer and the fourth layer in order from top to bottom.

[0125] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 600nm, 1100nm, 720nm, 1200nm, 780nm, 1300nm, 830nm, 1500nm, 850nm and 1700nm respectively. The sum of the thicknesses of the Ge3 layer and the ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1700nm, and the sum of the thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10580nm.

[0126] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0127] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0128] The average emissivity at 3-5 μm can be between 0.020 and 0.039 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.026 and 0.045 when TE polarization is used.

[0129] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.039 and 0.130, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.045 and 0.077.

[0130] Example 4

[0131] A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle. The film structure described in this embodiment is:

[0132] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure. The last layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are bonded.

[0133] The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula:

[0134] (AB) 2 (CD) 5 (1) In formula (1):

[0135] (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where:

[0136] (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0137] 2 indicates that there are 2 sub-periodic photonic crystal structures;

[0138] (CD) 5 represents a quasi-periodic photonic crystal structure, where:

[0139] (CD) represents a sub-quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence;

[0140] 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

[0141] The A indicates that the material is Ge and the thickness is 250 nm.

[0142] The B indicates that the material is ZnO and the thickness is 550 nm.

[0143] The C indicates that the material is Ge and the thickness is 600 nm.

[0144] The D indicates that the material is ZnO and the thickness is 1100 nm.

[0145] The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

[0146] The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 250nm, 550nm, 250nm and 550nm respectively. The sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 800nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1600nm.

[0147] The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are stacked from top to bottom in the order of the first layer, the second layer, the third layer and the fourth layer.

[0148] The quasi-periodic photonic crystal structure is composed of 5 sub-quasi-periodic photonic crystal structures, the first sub-quasi-periodic photonic crystal structure is composed of the 5th Ge3 layer and the 6th ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the 7th Ge4 layer and the 8th ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the 9th Ge5 layer and the 10th ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the 11th Ge6 layer and the 12th ZnO6 layer, and the fifth sub-quasi-periodic photonic crystal structure is composed of the 13th Ge7 layer and the 14th ZnO7 layer. The thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ..., Ge7 layer and ZnO7 layer are 600nm, 1100nm, 720nm, 1200nm, 780nm, 1300nm, 830nm, 1450nm, 880nm and 1650nm respectively. The sum of the thicknesses of the Ge3 layer and the ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1700nm, and the sum of the thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10510nm.

[0149] The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

[0150] The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°:

[0151] The average emissivity at 3-5 μm can be between 0.018 and 0.036 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.024 and 0.054 when TE polarization is used.

[0152] When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.036 and 0.125, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.054 and 0.080.

[0153] The one-dimensional λ / 4 periodic photonic crystal structure in this specific embodiment is composed of semiconductor material (Ge, with a refractive index of about 4.2) and oxide material (ZnO, with a refractive index of about 1.7). The sum of the thicknesses of the Ge layer and the ZnO layer of a sub-periodic photonic crystal structure is 700-800nm. The number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4, and low emissivity in the mid-infrared band of 3-5μm is achieved by using fewer thin film layers.

[0154] The quasi-periodic photonic crystal structure in this specific embodiment is composed of semiconductor materials (Ge, with a refractive index of about 4.2) and oxide materials (ZnO, with a refractive index of about 1.7). The sum of the thickness of the Ge layer and the ZnO layer of a sub-quasi-periodic photonic crystal structure is between 1700 and 2700nm. The number of layers of the quasi-periodic photonic crystal structure is 10, and the number of layers is small. While being compatible with the low emission in the 3-5μm mid-infrared band, it can achieve low emissivity in the 8-14μm far-infrared band, further achieving dual-band low emission. The low-layer one-dimensional infrared low-emissivity film system structure designed in this specific embodiment that is insensitive to polarization and incident angle is shown in the attached figure, Figure 1 The infrared reflectivity spectrum of a low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle in Example 1 when incident light is incident in the positive direction; Figure 2 for Figure 1 The infrared emissivity spectrum of the low-layer one-dimensional infrared low-emissivity film structure which is insensitive to polarization and incident angle when the incident light is incident in the positive direction; Figure 1 and Figure 2 It can be seen that the low-layer one-dimensional infrared low-emissivity film system structure has higher infrared reflectivity and lower infrared emissivity.

[0155] The low-layer one-dimensional infrared low-emissivity film system structure in this specific implementation has 14 layers, which can shorten the production cycle of the coating process, reduce production costs, and improve product reliability.

[0156] According to the simulation of the electromagnetic field simulation software CST, when the incident light angle is 0-60°, the TE polarization can achieve an average emissivity between 0.018 and 0.045 at 3-5 μm, and the TE polarization can achieve an average emissivity between 0.024 and 0.054 at 8-14 μm; the TM polarization can achieve an average emissivity between 0.025 and 0.130 at 3-5 μm; and the TM polarization can achieve an average emissivity between 0.040 and 0.080 at 8-14 μm, thus achieving insensitivity between polarization and incident angle.

[0157] Therefore, this specific implementation has the characteristics of fewer layers, shorter production cycle, higher reliability, and the ability to achieve dual-band low emission and insensitivity to polarization and incident angle.

Claims

1. A low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle, characterized by: The low-layer one-dimensional infrared low-emissivity film system structure that is insensitive to polarization and incident angle is composed of a one-dimensional λ / 4 periodic photonic crystal structure and a quasi-periodic photonic crystal structure, and the bottom layer of the one-dimensional λ / 4 periodic photonic crystal structure and the top layer of the quasi-periodic photonic crystal structure are laminated; The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle is expressed by the following formula: (AB) 2 (CD) 5 (1) In formula (1): (AB) 2 represents a one-dimensional λ / 4 periodic photonic crystal structure, where: (AB) represents a sub-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence. 2 indicates that there are 2 sub-periodic photonic crystal structures; (CD) 5 represents a quasi-periodic photonic crystal structure, where: (CD) represents a quasi-periodic photonic crystal structure in which Ge and ZnO are arranged in sequence. 5 indicates that there are 5 sub-quasi-periodic photonic crystal structures.

2. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The A indicates that the material is Ge and the thickness is 200-250 nm.

3. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The B indicates that the material is ZnO and the thickness is 500-550 nm.

4. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The C indicates that the material is Ge and the thickness is 600-900 nm.

5. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The D indicates that the material is ZnO and the thickness is 1100-1800 nm.

6. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The total number of layers of the low-layer one-dimensional infrared low-emissivity film system structure is 14 layers; among them, the number of layers of the one-dimensional λ / 4 periodic photonic crystal structure is 4 layers, and the number of layers of the quasi-periodic photonic crystal structure is 10 layers.

7. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The one-dimensional λ / 4 periodic photonic crystal structure is composed of two sub-periodic photonic crystal structures, the first sub-periodic photonic crystal structure is composed of the first Ge1 layer and the second ZnO1 layer, and the second sub-periodic photonic crystal structure is composed of the third Ge2 layer and the fourth ZnO2 layer; the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer are 200-250nm, 500-550nm, 220-250nm and 500-550nm respectively; the sum of the thicknesses of the Ge1 layer and the ZnO2 layer of the one sub-periodic photonic crystal structure is 700-800nm, and the sum of the thicknesses of the Ge1 layer, the ZnO1 layer, the Ge2 layer and the ZnO2 layer of the two sub-periodic photonic crystal structures is 1400-1600nm; The four layers of the one-dimensional λ / 4 periodic photonic crystal structure are stacked from top to bottom in the order of the first layer, the second layer, the third layer and the fourth layer.

8. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The quasi-periodic photonic crystal structure is composed of five sub-quasi-periodic photonic crystal structures, wherein the first sub-quasi-periodic photonic crystal structure is composed of the fifth Ge3 layer and the sixth ZnO3 layer, the second sub-quasi-periodic photonic crystal structure is composed of the seventh Ge4 layer and the eighth ZnO4 layer, the third sub-quasi-periodic photonic crystal structure is composed of the ninth Ge5 layer and the tenth ZnO5 layer, the fourth sub-quasi-periodic photonic crystal structure is composed of the eleventh Ge6 layer and the twelfth ZnO6 layer, the fifth sub-quasi-periodic photonic crystal structure is composed of the thirteenth Ge7 layer and the fourteenth ZnO7 layer; Ge3 layer, ZnO3 layer, Ge4 layer, ZnO4 layer, ... ..., the thicknesses of the Ge7 layer and the ZnO7 layer are 600-700nm, 1100-1200nm, 700-740nm, 1200-1250nm, 750-780nm, 1300nm, 800-830nm, 1450-1500nm, 850-900nm, 1600-1800nm ​​respectively; the sum of the thicknesses of the Ge3 layer and the ZnO3 layer of the first sub-quasi-periodic photonic crystal structure is 1700-1850nm, and the sum of the thicknesses of the Ge3 layer, ZnO3 layer, Ge4 layer and ZnO4 layer, ..., Ge7 layer and ZnO7 layer of the five sub-quasi-periodic photonic crystal structures is 10510-10850nm; The 10 layers of the quasi-periodic photonic crystal structure are stacked from top to bottom in the order of the 5th layer, the 6th layer, the 7th layer, ..., and the 14th layer.

9. The low-layer one-dimensional infrared low-emissivity film structure that is insensitive to polarization and incident angle according to claim 1, characterized in that: The low-layer one-dimensional infrared low-emissivity film structure has the following characteristics when the incident light angle is 0-60°: The average emissivity at 3-5 μm can be between 0.018 and 0.045 when TE polarization is used, and the average emissivity at 8-14 μm can be between 0.024 and 0.054 when TE polarization is used. When TM polarization is used, the average emissivity at 3 to 5 μm can be between 0.025 and 0.130, and when TM polarization is used, the average emissivity at 8 to 14 μm can be between 0.040 and 0.080.

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