Microcrystalline semiconductor storage battery

Abstract

The invention discloses a microcrystalline semiconductor storage battery, which relates to the field of energy storage and is based on N-type and P-type microcrystalline semiconductor materials, and an electron donor unit and an electron acceptor unit are formed by a plurality of microcrystalline semiconductor units. The N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively arranged in the insulation volume and are respectively provided with a current inlet and outlet wire terminal, a current inlet of the N-type semiconductor and a current outlet of the P-type semiconductor are connected through a diode or a power diode, and migration and diffusion of electrons are realized under the action of an external electric field. The storage battery has high energy density and efficient discharge performance in an extremely cold environment, and the volume energy density of the storage battery is superior to that of a traditional chemical battery. In addition, the microcrystal semiconductor material is adopted as the basic material, efficient refrigeration and heating functions can be achieved, the refrigeration efficiency is improved compared with a traditional semiconductor refrigeration technology, and the semiconductor refrigeration device is suitable for low-power refrigeration and heating equipment.

Description

Technical Field

[0001] The present invention relates to the field of energy storage technology, in particular to a microcrystalline semiconductor storage battery. Background Art

[0002] In the era of artificial intelligence, the establishment of a large number of databases requires the reliance on database chips. However, these chips consume a lot of electricity during operation, of which about 40% is converted into heat loss and about 50% is stored in the form of information. This shows that electricity is not only the power source for chip operation, but also a key carrier for information storage and transmission. Although semiconductor materials are mainly used to store and process information, they also have the potential to store charge or energy to a certain extent. However, people are currently paying more attention to the "information storage" function of semiconductors, and not enough attention to their "energy storage" characteristics.

[0003] In solar energy utilization technology, researchers have found that microcrystalline semiconductors can significantly improve photoelectric conversion efficiency. This is because microcrystalline semiconductor materials can provide more carriers, making the hole concentration in P-type microcrystals much higher than that of traditional P-type wafer materials, and the electron concentration in N-type microcrystals also significantly higher than that of ordinary N-type wafers. This phenomenon stems from the fact that the specific surface area of ​​microcrystalline semiconductors is much larger than that of conventional wafer materials, making it easier for doped impurities to penetrate and distribute, thereby effectively improving the carrier concentration and the photoelectric performance of the material.

[0004] Chemical batteries convert electrical energy into chemical bond energy, which is a multi-dimensional electromagnetic force balance, that is, the kinetic energy of lithium ions is converted into lithium ion charge potential energy and embedded in the micropores of carbon sheets. The energy storage of semiconductor materials is to transfer the kinetic energy of electrons to holes and convert it into electron potential energy to establish an electromagnetic force balance system. Lithium batteries are electromagnetic force balance systems established by the migration of lithium ions into carbon sheet micropores. Although semiconductor holes and carbon sheet micropores can both establish electromagnetic force balance, holes are not as easily affected by ambient temperature as micropores in terms of morphology, and the effect of temperature on holes is relatively limited. Therefore, holes can cope with the charging and discharging process freely, and the charging and discharging speed is not greatly affected by extremely cold weather and relatively high temperature weather. Based on the above principle, relevant scientific and technological workers have applied for relevant patents for semiconductor chip energy storage. It is conceivable that its energy storage is not only very limited, but also there will be drift of minority carriers while the majority carriers diffuse inside the semiconductor.

[0005] For example, the Chinese patent with publication number CN2416657Y is a technical method for storing electrical energy using semiconductor chips applied at the end of the last century, and it also uses the majority-carrier diffusion charging and minority-carrier power generation of the PN junction to achieve the application purpose. This is only slightly stronger than storing information energy. The internal electric field energy established by the majority-carrier diffusion movement is very limited. Because the electron concentration is not enough, the concentration of impurities doped using chips will be greatly limited. Summary of the invention

[0006] In view of the shortcomings of the prior art, the present invention discloses a microcrystalline semiconductor storage battery, comprising:

[0007] An N-type microcrystalline semiconductor and a P-type microcrystalline semiconductor, wherein the N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively placed in respective insulating volumes and are respectively provided with current inlet and outlet terminals;

[0008] A unidirectional electronic component, wherein the positive electrode of the unidirectional electronic component is connected to the current outlet of the P-type microcrystalline semiconductor through a wire, and the negative electrode of the unidirectional electronic component is connected to the current inlet of the N-type microcrystalline semiconductor through a wire;

[0009] a first wiring device and a second wiring device, wherein the first wiring device is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor, and the second wiring device is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor;

[0010] Wherein, the first wiring device and the second wiring device are used to connect an electrical load, a charging device and a DC power supply.

[0011] As an optional implementation, it also includes:

[0012] a first capacitor, wherein the second wiring device is connected to a negative electrode of the first capacitor;

[0013] a second capacitor, wherein the first wiring device is connected to a positive electrode of the second capacitor;

[0014] A linkage switching switch, wherein the negative electrode of the first capacitor and the positive electrode of the second capacitor are respectively connected to the linkage switching switch through wires;

[0015] a third capacitor, wherein the positive electrode of the third capacitor is connected to the positive electrode of the first capacitor through the linkage switching switch, and the negative electrode of the third capacitor is connected to the negative electrode of the second capacitor through the linkage switching switch;

[0016] Wherein, in response to the battery being in the charging process, the linkage switching switch turns on the DC power supply, and the first capacitor and the second capacitor achieve charge balance;

[0017] In response to the completion of charging of the storage battery, the linkage switching switch disconnects the DC power supply and reopens the positive and negative electrodes of the third capacitor.

[0018] As an optional implementation, it also includes:

[0019] A linkage switch is provided between the second wiring device and the negative electrode of the first capacitor and between the first wiring device and the positive electrode of the second capacitor.

[0020] As an optional implementation, the first capacitor, the second capacitor and the third capacitor are all super capacitors, and the capacity of the third capacitor is greater than the capacity of the first capacitor and the second capacitor.

[0021] As an optional implementation, the distance between the positive and negative electrodes of the first capacitor and the second capacitor can be adjusted synchronously to achieve re-transfer and adjustment of the parallel electric field force.

[0022] As an optional implementation, the unidirectional electronic component includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

[0023] As an optional implementation, it also includes:

[0024] A first heat exchange device, disposed on the P-type microcrystalline semiconductor;

[0025] A second heat exchange device is provided on the N-type microcrystalline semiconductor;

[0026] The heat exchange device may be arranged in the following manners: arranged in the microcrystalline semiconductor or arranged on the external wall of the microcrystalline semiconductor.

[0027] As an optional implementation, it also includes:

[0028] A radiator, wherein the inlet of the first heat exchange device is connected to the outlet of the radiator through a pipeline;

[0029] A surface cooler, wherein the inlet of the second heat exchange device is connected to the outlet of the surface cooler through a pipeline;

[0030] a first circulation pump, wherein the outlet of the first heat exchange device is connected to the inlet of the first circulation pump through a pipeline, and the outlet of the first circulation pump is connected to the inlet of the radiator through a pipeline;

[0031] A second circulation pump, wherein the outlet of the second heat exchange device is connected to the inlet of the second circulation pump through a pipeline, and the outlet of the second circulation pump is connected to the inlet of the surface cooler through a pipeline.

[0032] As an optional implementation, the negative electrode of the N-type microcrystalline semiconductor is connected to the negative electrode of the DC power supply, and the positive electrode of the P-type microcrystalline semiconductor is connected to the positive electrode of the DC power supply, so as to realize microcrystalline semiconductor cooling and heating.

[0033] As an optional implementation, the system further includes: a control module, wherein the control module includes:

[0034] a memory unit, used for storing charge balance parameters, electric field adjustment strategies and capacitor spacing adjustment instructions before the linkage switch is switched from a charging state to a state where the DC power supply is disconnected and the third capacitor is turned on;

[0035] a preloading unit, configured to output the charge balance parameter, the electric field adjustment strategy and the capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor and the second capacitor when the linkage switch switches states;

[0036] The delay control unit is used to set a predetermined delay time between the linkage switching switch disconnecting the DC power supply and connecting the third capacitor.

[0037] Compared with the prior art, the beneficial effects of the present application are as follows: the microcrystalline semiconductor battery provided by the present invention is based on the design of nano-scale microcrystalline semiconductor materials, which is superior to traditional chemical batteries in energy storage density, and at the same time shows excellent adaptability in extremely cold and high temperature environments, overcoming the problem of performance degradation of existing batteries under extreme conditions. In addition, by combining the Peltier effect and an efficient heat exchange device, the present invention realizes the integrated application of refrigeration and heating functions, and its refrigeration efficiency is better than that of traditional semiconductor technology, which is suitable for miniaturized thermal management needs. The battery has fast charging and high-power discharge capabilities to meet the immediate use needs of modern high-energy equipment. At the same time, it is adapted to a variety of application scenarios through modular design, showing good scalability. The use of environmentally friendly microcrystalline semiconductor materials not only reduces the risk of environmental pollution caused by chemical batteries, but also improves the overall energy storage efficiency by optimizing electron migration and electric field distribution paths. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of a microcrystalline semiconductor storage battery according to an embodiment of the present disclosure supplying power to a load after charging is completed;

[0039] Figure 2 A schematic diagram of a microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0040] Figure 3 A schematic diagram of another microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0041] Figure 4 A schematic diagram of another microcrystalline semiconductor battery provided by an embodiment of the present disclosure;

[0042] Figure 5 A schematic diagram of a cooling process for a microcrystalline semiconductor battery provided in an embodiment of the present disclosure.

[0043] Reference numerals:

[0044] 1. First insulating volume; 2. N-type microcrystalline semiconductor; 3. Second insulating volume; 4. P-type microcrystalline semiconductor; 5. One-way electronic component; 6. Current inlet; 7. Current outlet; 8. Second wiring device; 9. First wiring device; 10. Linkage switch; 11. Load; 12. Second capacitor; 13. First capacitor; 14. Third capacitor; 15. Linkage switching switch; 16. DC power supply; 17. Radiator; 18. First circulation pump; 19. First heat exchange device; 20. First outlet; 21. First inlet; 22. Radiator; 23. Second circulation pump; 24. Second heat exchange device; 25. Second inlet; 26. Second outlet. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0046] Unless otherwise defined, technical or scientific terms used in the present disclosure should have the common meanings understood by a person having ordinary skills in the field to which the present disclosure belongs.

[0047] The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. The words "include" or "comprises" and similar words mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. The words "connected" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.

[0048] Although semiconductor storage can host electrons with the help of holes, the number of semiconductor holes is very limited. In fact, semiconductor storage of electrons does not need so many holes to provide hosting space for electrons. Even a few holes can be used because it is not for storing energy as the ultimate purpose, but only for storing information. For this reason, in view of the fact that the traditional semiconductor doping process cannot allow all the silicon atoms in the center of the lattice to penetrate to form majority carriers or hole carriers, the patent of this invention is a semiconductor battery formed by doping microcrystalline silicon particles, especially a storage device for electric energy by doping nano-scale microcrystalline particles, so the impurity penetration surface area will be larger, and there will be a large number of space conditions for the majority carriers to be hosted.

[0049] Microcrystalline semiconductor material is mixed with conductive powder or conductive paste to form N-type microcrystalline donor material and P-type microcrystalline host material, and the PN junction of the semiconductor is replaced by an insulating film. The N-type microcrystalline donor material and the P-type microcrystalline host material are placed on both sides of the insulating film respectively, thereby forming semiconductor capacitors of various structures, and a wire connected to the positive electrode is led out from the P-type microcrystalline host material, and a wire connected to the negative electrode is led out from the N-type microcrystalline donor material, thus forming multiple semiconductor battery units, each of which can be connected in parallel or in series.

[0050] See also Figure 1 , Figure 1 A schematic diagram of a microcrystalline semiconductor storage battery for powering a load after charging is completed provided for the implementation of the present disclosure; the microcrystalline semiconductor storage battery comprises:

[0051] An N-type microcrystalline semiconductor 2 and a P-type microcrystalline semiconductor 4, wherein the N-type microcrystalline semiconductor 2 and the P-type microcrystalline semiconductor 4 are respectively loaded into a first insulating volume 1 and a second insulating volume 3, and are respectively provided with current inlet and outlet terminals;

[0052] A unidirectional electronic component 5, wherein the positive electrode of the unidirectional electronic component 5 is connected to the current outlet 7 of the P-type microcrystalline semiconductor 4 through a wire, and the negative electrode of the unidirectional electronic component 5 is connected to the current inlet 6 of the N-type microcrystalline semiconductor 2 through a wire;

[0053] A first wiring device 9 and a second wiring device 8, wherein the first wiring device 9 is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor 2, and the second wiring device 8 is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor 4;

[0054] The first wiring device 9 and the second wiring device 8 are used to connect an electrical load 11 or a charging device and a DC power supply 16 actually set based on a usage scenario.

[0055] As an optional implementation, the unidirectional electronic element 5 includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

[0056] In a specific implementation, the present disclosure uses an N-type microcrystalline semiconductor 2 as an electron donor material, and a P-type microcrystalline semiconductor 4 as an electron acceptor material, which are respectively loaded into respective insulating volumes, and lead out respective current inlet and outlet terminals, and the current outflow end wire of the P-type material is connected to the positive pole of the unidirectional electronic component 5, and the lead-out end of the N-type material is connected to the negative terminal of the unidirectional electronic component 5, and the electrons migrate from the N-type microcrystalline semiconductor material to the P-type microcrystalline semiconductor material and recombine with holes, and driven by an external electric field, the carriers accumulate in the P-type material. The unidirectional electronic component 5 is used to prevent the electrons from flowing back to the N-type material, thereby maintaining the unidirectional flow of current and improving the energy storage efficiency.

[0057] In the specific implementation, the external electric field needs to use dual capacitors to couple the respective P-type or N-type microcrystalline semiconductors in series for energy storage, so that the majority electrons in the N-type microcrystalline semiconductor 2 can be continuously migrated and lodged in the holes of the P-type microcrystalline semiconductor 4 by establishing an internal electric field. At the same time, a linkage switching switch 15 is also set. After all electrons are migrated and lodged in the holes, the linkage switching switch 15 automatically disconnects the DC power supply 16 and turns on the electromagnetic force to re-constitute a balanced supercapacitor. The positive and negative charges facing the DC power supply end of the two capacitors (optional supercapacitors) coupling the N-type and P-type microcrystalline semiconductor devices will run to the supercapacitor that is re-balanced by the electromagnetic force. Then, the other side of the two coupled supercapacitors loses the attraction of opposite charges. The negative charges lodged under the action of the holes and the positive charges formed by the electrons lost by the N-type microcrystalline semiconductor material form an internal electric field through the unidirectional electronic element 5. In this way, the device to which the N-type microcrystalline semiconductor 2 belongs can be used as the positive electrode of the battery, and the corresponding device to which the P-type microcrystalline semiconductor 4 belongs constitutes the negative electrode of the battery.

[0058] As an alternative implementation, see Figure 2 , Figure 2 A schematic diagram of a microcrystalline semiconductor battery provided for the implementation of the present disclosure is Figure 1 Another solution of the embodiment in the embodiment, which is marked with Figure 1 The difference is that the N-type device formed by the first insulating volume 1 and the N-type microcrystalline semiconductor 2 and the P-type device formed by the second insulating volume 3 and the P-type microcrystalline semiconductor 4 are closely attached to each other.

[0059] This can form a more stable internal electric field, and at the same time the cold and heat of the heat-generating microcrystalline semiconductor and the cooling microcrystalline semiconductor can be partially neutralized.

[0060] See also Figure 3 , Figure 3 A schematic diagram of another microcrystalline semiconductor battery provided for the implementation of the present disclosure; as an optional implementation, the microcrystalline semiconductor battery further includes:

[0061] A first capacitor 13, wherein the second wiring device 8 is connected to a negative electrode of the first capacitor 13;

[0062] A second capacitor 12, wherein the first wiring device 9 is connected to a positive electrode of the second capacitor 12;

[0063] A linkage switching switch 15, wherein the negative electrode of the first capacitor 13 and the positive electrode of the second capacitor 12 are connected to the linkage switching switch 15 through wires;

[0064] a third capacitor 14, wherein the positive electrode of the third capacitor 14 is connected to the positive electrode of the first capacitor 13 through the linkage switching switch 15, and the negative electrode of the third capacitor 14 is connected to the negative electrode of the second capacitor 12 through the linkage switching switch 15;

[0065] In response to the battery being in the charging process, the linkage switch 15 turns on the DC power supply 16, and the first capacitor 13 and the second capacitor 12 achieve charge balance;

[0066] In response to the battery charging being completed, the linkage switch 15 disconnects the DC power supply 16 and reopens the positive and negative electrodes of the third capacitor 14 .

[0067] As an optional implementation, it also includes:

[0068] The linkage switch 10 is arranged between the second wiring device 8 and the negative electrode of the first capacitor 13 and between the first wiring device 9 and the positive electrode of the second capacitor 12 .

[0069] As an optional implementation, the first capacitor 13 , the second capacitor 12 , and the third capacitor 14 are all supercapacitors, and the capacity of the third capacitor 14 is greater than the capacity of the first capacitor 13 and the second capacitor 12 .

[0070] As an optional implementation, the distance between the positive and negative electrodes of the first capacitor 13 and the second capacitor 12 can be adjusted synchronously to achieve the re-transfer and adjustment of the parallel electric field force.

[0071] In the specific implementation, Figure 3 The example is in Figure 1 On the basis of the embodiment, a related charging device is combined to complete the charging process. If the unique charging device of the present invention is not combined, and the DC power supply 16 is directly connected, the N-type and P-type microcrystalline semiconductor materials are only conductors and cannot realize charging and energy storage. If the first capacitor 13 (coupling capacitor, which can be a super capacitor) is connected in series with the N-type microcrystalline semiconductor device, and the second capacitor 12 (coupling capacitor) is connected in series with the P-type microcrystalline semiconductor device before the DC power supply 16 is turned on, the majority carriers in the N-type microcrystalline semiconductor material migrate to the P-type microcrystalline semiconductor material through the unidirectional electronic element 5. These electrons cannot drift back to the N-type microcrystalline semiconductor material, and cannot flow into the positive electrode of the DC power supply 16. Because the capacitor has the function of blocking direct current but passing alternating current, the electrons will be retained in the holes of the P-type material and can form a relatively stable static balance of electromagnetic force.

[0072] On the other hand, the first capacitor 13 will cause the negative charges migrated from the N-type material to be bound by the positive charges on the other side of the capacitor, and the positive charges in the N-type microcrystalline semiconductor material will be bound by the negative charges on the other side of the second capacitor 12. In order to allow electrons to better reside in the P-type semiconductor holes, the positive and negative charges of the capacitors (the second capacitor 12 and the first capacitor 13) must be removed to complete the migration of the majority electrons from the N-type microcrystalline semiconductor material and completely reside in the P-type microcrystalline semiconductor holes, so that the N-type device and the P-type device themselves form an internal balanced electric field. At this time, it is necessary to disconnect the connection between the second capacitor 12 and the DC power supply 16 through the linkage switching switch 15, and then turn on the capacitor (the third capacitor 14) that re-constitutes the electromagnetic force balance, that is, the second capacitor 12 and the third capacitor 14 are turned on through the linkage switching switch 15. At the same time, the linkage switching switch 15 also cuts off the connection between the first capacitor 13 and the DC power supply 16, and then turns on the capacitor (the third capacitor 14) that re-constitutes the electromagnetic force balance, that is, the first capacitor 13 and the third capacitor 14 are turned on through the linkage switching switch 15.

[0073] Then, the positive and negative charges of the second capacitor 12 and the first capacitor 13 respectively run into the third capacitor 14, forming a new parallel electric field force balance, and the electrons migrated from the N-type microcrystalline semiconductor 2 form an internal electric field force balance with the P-type microcrystalline semiconductor 4 through the unidirectional electronic element 5. At this time, the linkage switch 10 used to connect the positive side of the first capacitor 13 to the N-type terminal device, that is, the first wiring device 9, and the linkage switch 10 used to connect the negative side of the second capacitor 12 to the P-type terminal device, that is, the second wiring device 8 can be cut off, so that the entire charging process is completed, and then the connecting line at the other end of the linkage switch 10 can be connected to the load 11 (such as Figure 1 shown).

[0074] In a specific implementation, the plates (positive and negative) of the first capacitor 13 and the second capacitor 12 can be mounted on their respective brackets, and these brackets can be precisely adjusted to the spacing between each other by mechanical or mechatronic devices. Preferably, the bracket is made of high-strength insulating material to ensure that no additional leakage path is introduced during the adjustment process. In order to achieve synchronous adjustment, a retractable micro linear drive (such as a piezoelectric actuator, an electric screw, a screw mechanism linked to a stepping motor, or a precision fine-tuning guide device) can be respectively equipped on the plate brackets of the first capacitor 13 and the second capacitor 12. During execution, the control unit will send adjustment signals to the two sets of capacitor plate brackets at the same time according to the pre-set control logic and the real-time detected charge state, internal electric field distribution or external load demand information, so that the plates of the first capacitor 13 and the second capacitor 12 move inward or outward synchronously, thereby changing the gap between the two.

[0075] This synchronous distance adjustment can be in a closed-loop control mode: when the sensor (such as a displacement sensor or an electric field strength sensor) detects that the expected electric field force state is not reached or maintained, the control unit continues to fine-tune the extension and contraction of the above-mentioned actuator until the required electric field distribution and energy state are achieved. Through this precisely controllable synchronous adjustment, the distance between the positive and negative electrodes of the two capacitors can be dynamically changed, thereby finely regulating the internal electron-hole balance process.

[0076] Such distance adjustment is of great significance for achieving efficient charge diffusion and migration and optimizing the electron hosting state inside microcrystalline semiconductors.

[0077] In addition, such synchronous adjustment also facilitates flexible tuning of the performance of the battery under different operating environments (such as temperature changes, sudden load changes), and can improve the overall energy storage and output efficiency by fine-tuning the electrode distance without changing the hardware structure.

[0078] For further information, see Figure 4 , Figure 4 A schematic diagram of another microcrystalline semiconductor battery provided for the implementation of the present disclosure; as an optional implementation, Figure 4 and Figure 3 The marked serial numbers are the same, the difference is that the N-type device and the P-type device are placed close together, which is convenient for heat transfer and makes it easier for the migrating electrons to lodge in the holes. The linkage switching switch 15 is in a state of connecting the electromagnetic force to re-constitute the balanced capacitor, that is, between the positive and negative electrodes of the third capacitor 14, and the DC power supply 16 is disconnected.

[0079] In addition, in combination with a supercapacitor charging device, a battery device based on a microcrystalline semiconductor is provided, and heat exchange devices are respectively provided inside the N-type and P-type microcrystalline semiconductors, and respective circulation pumps and radiators 17 or surface coolers 22 are respectively configured, and a DC power supply 16 is used as a thrust for heat transfer to realize a new type of semiconductor cooling and heating. The interior of the current refrigeration sheet is a thermopile formed by hundreds of pairs of electrical couplings to achieve an enhanced cooling (heating) effect. The N-type microcrystalline semiconductor material and the P-type microcrystalline semiconductor material of the present invention are connected in series with a power supply, which is equivalent to forming an electrical couple. When the majority electron migrates to the hole, a Peltier endothermic effect occurs, and the migration kinetic energy of the electron is promoted by the external molecular kinetic energy.

[0080] For this, see Figure 5 , Figure 5 A schematic diagram of a cooling process of a microcrystalline semiconductor battery provided in an embodiment of the present disclosure; as an optional implementation manner, the microcrystalline semiconductor battery further includes:

[0081] A first heat exchange device 19, disposed on the P-type microcrystalline semiconductor 4;

[0082] A second heat exchange device 24, disposed on the N-type microcrystalline semiconductor 2;

[0083] The heat exchange device may be arranged in the following manners: arranged in the microcrystalline semiconductor or arranged on the external wall of the microcrystalline semiconductor.

[0084] As an optional implementation, it also includes:

[0085] Radiator 17, the inlet of the first heat exchange device 19 is connected to the outlet of the radiator 17 through a pipeline;

[0086] A surface cooler 22, wherein the inlet of the second heat exchange device 24 is connected to the outlet of the surface cooler 22 through a pipeline;

[0087] A first circulation pump 18, wherein the outlet of the first heat exchange device 19 is connected to the inlet of the first circulation pump 18 through a pipeline, and the outlet of the first circulation pump 18 is connected to the inlet of the radiator 17 through a pipeline;

[0088] The outlet of the second circulating pump 23 and the second heat exchange device 24 are connected to the inlet of the second circulating pump 23 through a pipeline, and the outlet of the second circulating pump 23 is connected to the inlet of the surface cooler 22 through a pipeline.

[0089] In a specific implementation, the second inlet 25 of the second heat exchange device 24 is connected to the outlet of the condenser 22 through a pipeline, the second outlet 26 of the heat exchange device is connected to the inlet of the first circulation pump 23 through a pipeline, and the outlet of the first circulation pump 23 is connected to the inlet of the condenser 22 through a pipeline; and the first outlet 20 on the first heat exchange device 19 is connected to the inlet of the second circulation pump 18 through a pipeline, the outlet of the second circulation pump 18 is connected to the inlet of the radiator 17 through a pipeline, and the outlet of the radiator 17 is connected to the first inlet 21 of the first heat exchange device 19 through a pipeline.

[0090] The lead wire of the P-type microcrystalline semiconductor 4 loaded into the second insulating volume 3 is connected to the positive electrode of the unidirectional electronic component 5 (diode or power diode); the lead wire of the N-type microcrystalline semiconductor 2 loaded into the first insulating volume 1 is connected to the negative electrode of the unidirectional electronic component 5, the second wiring device 8 is connected to the positive electrode of the DC power supply 16 through a wire, and the first wiring device 9 is connected to the negative electrode of the DC power supply 16 with a wire. When the power is turned on, under the action of the external electric field, the majority electrons of the N-type microcrystalline semiconductor 2 will form a trend of flowing toward the P-type microcrystalline semiconductor 4, but lack sufficient kinetic energy and must accept external molecular kinetic energy to move. In this way, it will absorb the heat around the N-type material to push the electrons to transfer toward the P-type microcrystalline semiconductor 4, and bring the heat of the N-type microcrystalline semiconductor material to the P-type microcrystalline semiconductor material through the migration of electrons, thereby causing the temperature of the N-type microcrystalline semiconductor material to decrease, while the temperature of the P-type microcrystalline semiconductor material to increase. This is the Peltier endothermic effect.

[0091] In this way, it is different from the traditional semiconductor refrigeration sheet, which is composed of hundreds of tiny N-type semiconductors and hundreds of P-type semiconductors connected in series and in parallel. The inside of the refrigeration sheet is composed of hundreds of pairs of electrically coupled thermoelectric piles to achieve the effect of enhancing cooling (heating). A pair of P-type semiconductors and N-type semiconductors are placed in the circuit to form a unit. When powered on, electron-hole pairs will be generated at one end, the internal energy will decrease, the temperature will drop, and a cold end will be formed; the other end will increase the internal energy and the temperature will rise due to the recombination of electron-hole pairs, forming a hot end. The temperature difference between hot and cold generated by a single pair of PN units is limited. Multiple pairs can be connected in series and in parallel in the circuit, and then the upper and lower ceramic plates can be used to package them into TEC devices. In this way, one end of the TEC device is the cold side and the other end is the hot side. The more thermoelectric piles connected in series and in parallel, the greater the cooling power and the lower the cooling temperature.

[0092] In a specific implementation, the present invention realizes efficient heat transfer and regulation by setting corresponding heat exchange devices (such as the first heat exchange device 19 and the second heat exchange device 24) inside or in adjacent areas of the N-type microcrystalline semiconductor 2 and the P-type microcrystalline semiconductor 4, and using the radiator 17, the surface cooler 22 and the circulation pump. The radiator 17 can be a structure with a large heat exchange area (such as a metal radiator with fins and heat exchange tube bundles). When the fluid medium (such as water, ethylene glycol solution or other coolant) passes through it, the radiator 17 can efficiently release heat to the external ambient air, thereby reducing the temperature of the circulating medium. The surface cooler 22 is represented by a tube-fin heat exchanger or a plate heat exchanger. Its working principle is similar to that of the radiator 17, but it is usually used to cool the fluid, or to achieve heat recovery and redistribution under certain working conditions, such as passing the low-temperature refrigerant fluid on the refrigeration side through the surface cooler 22, so that the heat transfer process can be carried out under controlled conditions, thereby accurately providing cooling or pre-cooling heat exchange capacity for the N-type or P-type microcrystalline semiconductor side.

[0093] In the above heat exchange loop, the circulation pump (such as the first circulation pump 18 and the second circulation pump 23) is used to maintain a certain fluid flow and pressure in the pipeline system, thereby ensuring that the coolant or heating medium flows continuously between the radiator 17, the surface cooler 22, and the heat exchange device.

[0094] When powered on, the impeller or rotor in the pump rotates at high speed, sucking the cryogenic liquid from one end of the cooler 22 or radiator 17, and delivering it to the heat exchange device after pressurization. As heat is transferred between the heat exchange device and the semiconductor material, the temperature of the circulating fluid changes, and the radiator 17 or cooler 22 dissipates the heat to the outside, or transfers the heat to the components that need it, so as to achieve a stable thermal management cycle.

[0095] In addition, the first heat exchange device 19 and the second heat exchange device 24 can select appropriate structures and working modes according to the application scenario. Since temperature gradients may occur in different regions during the operation of the microcrystalline semiconductor battery (for example, the cooling and heating effects accompanying the migration of electrons from the N-type region to the P-type region), the heat exchange devices are arranged on both sides to help maintain the relative balance of the local temperature field.

[0096] Exemplarily, the first heat exchange device 19 and the second heat exchange device 24 may adopt mature heat transfer elements such as microchannel cold plates, heat pipes, or substrate-embedded flow channel structures with high thermal conductivity. These heat exchange devices are usually connected with a cooling medium (such as deionized water, ethylene glycol solution, or other coolants with low freezing point and good thermal conductivity). In the first heat exchange device 19 adjacent to the P-type microcrystalline semiconductor 4, the cooling medium can flow continuously through the promotion of a circulation pump, thereby quickly taking away the heat released by the encounter between electrons and holes, avoiding local overheating and affecting the charge migration ability of the semiconductor material. In the second heat exchange device 24 adjacent to the N-type microcrystalline semiconductor 2, a suitable low-temperature environment is formed in this area by circulating the cooling medium, which is conducive to enhancing the cooling effect when electrons flow from the N-type region to the P-type region.

[0097] Taking the battery compartment of an electric vehicle as an example, when a microcrystalline semiconductor battery is installed near the vehicle chassis or the electric drive system, the ambient temperature may be high and change frequently. By independently configuring the first heat exchange device 19 and the second heat exchange device 24 in the N-type and P-type regions and connecting the radiator 17, the surface cooler 22 and the circulation pump to form a closed circulation loop, the temperature distribution of the semiconductor region can be quickly adjusted under high-load conditions. Since the circulation pump can adjust the flow and pressure as needed, when the vehicle accelerates and causes the battery to discharge rapidly, the control module can increase the flow rate of the circulating medium to enhance the heat exchange capacity and avoid overheating that affects the charge migration efficiency. Conversely, under light load or standby mode, the circulation pump can reduce the flow rate to reduce energy consumption while maintaining a suitable thermal balance inside the battery.

[0098] In this way, with the coordinated operation of the above-mentioned radiator 17, surface cooler 22 and circulation pump, the microcrystalline semiconductor battery of the present invention can maintain a suitable temperature distribution under different working conditions such as power-on and energy storage and discharge. On the one hand, the heat exchange efficiency can be finely controlled by adjusting the speed or flow of the circulation pump, so that the waste heat generated inside the battery can be quickly removed when necessary to avoid local overheating; on the other hand, the working state of the radiator 17 or the surface cooler 22 can be adjusted accordingly according to the load demand or the switching of the cooling and heating mode, so as to achieve the purpose of improving the overall energy utilization rate, extending the service life of the device and improving the reliability of the battery of the present invention. Through the combination of such conventional and mature heat exchange and fluid circulation means, the microcrystalline semiconductor battery described in the present invention can stably and efficiently perform energy storage and thermal management functions in a variety of applications.

[0099] The microcrystalline semiconductor used in the present invention can be a nano-scale particle semiconductor, and the cooling effect of the semiconductor components connected in series and parallel is better than the existing semiconductor refrigerators, because the N-type and P-type microcrystalline semiconductor volume devices are mixed with conductive materials, and the conductive materials are equivalent to the copper skin of the conductive layer under the insulating layer ceramic of the traditional semiconductor refrigerator. Therefore, its cooling power will be greater and the efficiency will be correspondingly improved. Because the heat exchange device is closer to the cold source or heat source of the semiconductor, its heat transfer area will also be greatly improved.

[0100] In this way, the microcrystalline semiconductor solid-state battery of the present invention has the advantages of both supercapacitors and lithium batteries. The principle of majority carrier migration and hosting holes is similar to the principle of lithium ions embedding in carbon atom micropores, except that electrons host holes, and it is much easier for majority carriers to leave holes during discharge than for lithium ions to de-embed. Especially in low temperature environments, the advantage is more prominent, and its discharge power is also much greater.

[0101] Exemplarily, the microcrystalline semiconductor battery of the present invention is used as an electric vehicle battery without the need for a supercapacitor to start the vehicle quickly, and has a fast charging speed and a longer endurance.

[0102] As an optional implementation, the system further includes: a control module, wherein the control module includes:

[0103] A memory unit, used for storing charge balance parameters, electric field adjustment strategies and capacitor spacing adjustment instructions before the linkage switch 15 is switched from a charging state to a state where the DC power supply 16 is disconnected and the third capacitor 14 is turned on;

[0104] A preloading unit, used for outputting the charge balance parameter, electric field adjustment strategy and capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor 13 and the second capacitor 12 when the linkage switch 15 switches state;

[0105] The delay control unit is used to set a predetermined delay time between the linkage switch 15 disconnecting the DC power supply 16 and connecting the third capacitor 14 .

[0106] In the specific implementation, in this embodiment, in order to achieve accurate control of the electron-hole migration process inside the microcrystalline semiconductor battery, a control module can be added to the battery system, which includes a memory unit, a preloading unit and a delay control unit. The control module can be composed of a single-chip microcontroller (MCU) or a programmable logic controller (PLC) and a corresponding drive circuit, and is connected to the first capacitor 13, the second capacitor 12, the third capacitor 14, the linkage switch 15, and each electrode lead of the microcrystalline semiconductor battery through a data line and a control line.

[0107] During operation, when the external DC power supply 16 is close to the completion of charging the battery, the memory unit of the control module will read the charge balance parameters, electric field adjustment strategy and instructions for fine-tuning the capacitor spacing from the previously recorded data, which have been written into the memory unit in the previous charging stage or initial calibration stage. At this time, the algorithm embedded in the MCU will select a matching charge distribution scheme and capacitor plate spacing adjustment value (this value can be used to control a small motor or linear actuator to make micron-level adjustments between the plates) based on the currently detected voltage, current and internal temperature parameters, and load these data into the temporary register of the preload unit.

[0108] During the interval when the linkage switch 15 is about to switch from the "charging" state to the "disconnecting the DC power supply 16 and connecting the third capacitor 14" state, the preloading unit will, under the control of the MCU, output the predetermined voltage reference value and the charge distribution instruction to the control loop corresponding to the first capacitor 13 and the second capacitor 12. The control loop then drives the micro-actuator to start synchronous fine-tuning the distance between the capacitor plates, so that the plate gap between the two groups of capacitors reaches the preset value calculated previously. At the same time, the preloading unit will also output the rated electric field balance parameters to the relevant control circuit through a PWM (pulse width modulation) signal or a DAC (digital-to-analog conversion), so that the capacitor terminals have ideal initial field strength conditions at the moment of switching.

[0109] During this process, the delay control unit will set a short delay time (for example, in the range of 10 to 100 milliseconds, which can be adjusted according to the characteristics of the device and the application scenario). This delay will take effect after the linkage switching switch 15 cuts off the DC power supply 16, thereby ensuring that the access to the third capacitor 14 does not occur instantaneously. The delay is achieved by setting a count value in the timer module inside the MCU. From the moment the linkage switching switch 15 disconnects the DC power supply 16, the timer starts counting, and the control signal remains output during the delay time, so that the internal charge distribution has enough buffer time to complete the initial balance, reducing the electromagnetic overshoot and thermal transients that may be caused by rapid switching. When the delay time ends, the delay control unit of the control module instructs the linkage switching switch 15 to turn on the positive and negative poles of the third capacitor 14 to achieve the final step of rebalancing the internal electric field.

[0110] In a specific implementation, the N-type and P-type microcrystalline semiconductors in the microcrystalline semiconductor battery exhibit special charge distribution and migration characteristics at the nanoscale and micrometer scale. When the DC power supply 16 is charged, the external electric field drives the electrons to migrate from the N-type region to the P-type region holes, so that the internal charge balance is maintained after the power is cut off. However, unlike traditional electrochemical batteries or pure supercapacitors, the electron-hole distribution inside the microcrystalline semiconductor material is extremely sensitive to instantaneous electric field changes, plate spacing fine-tuning, and electromagnetic interference. Once the linkage switching switch 15 suddenly cuts off the DC power supply 16 and turns on the third capacitor 14 without sufficient buffering and advance pre-adjustment, the electric field will instantly change direction and intensity, resulting in the inability of electrons to fully and stably lodge in the holes. This may cause partial charge migration or disordered diffusion, reduce the available energy storage capacity, and be accompanied by problems such as local overheating of the material or obstruction of charge transfer in low-temperature areas.

[0111] This application has carried out targeted technical enhancements in the control module for the unique nano-scale charge dynamic characteristics and sensitive internal field distribution of microcrystalline semiconductor batteries. The memory unit not only simply records general charge balance parameters and electric field adjustment strategies, but also specifically includes the microcrystalline semiconductor internal electric field distribution matrix, band structure characteristic parameters and the optimal capacitor spacing control curve related to the semiconductor energy level obtained by experimental calibration and real-time sensing data. When the DC power supply 16 approaches the disconnection point, the MCU will extract the charge distribution instructions and plate spacing adjustment scheme suitable for the current scenario from the memory according to specific parameters such as the instantaneous temperature gradient of the microcrystalline semiconductor material, the internal electric field strength difference and the electron-hole recombination rate.

[0112] The preloading unit executes this set of parameter loading processes specific to the characteristics of microcrystalline semiconductors at the moment when the state of the linkage switching switch 15 is about to be changed. Unlike the general energy storage system that only precharges or presets the voltage and current, the preloading unit in this embodiment combines the information such as the particle size distribution, hole density characteristics and band offset previously obtained from the calibration experiment to accurately control the nanometer-level adjustment between the plates of the first capacitor 13 and the second capacitor 12. In actual operation, this may achieve a change of several microns or even nanometers in the gap between the plates through a high-precision piezoelectric actuator, thereby forming an internal electric field distribution suitable for the continued hosting of electrons during the transition period of the linkage switching, avoiding the charge from migrating back or oscillating disorderly due to instantaneous mismatch.

[0113] In addition, the setting of the delay control unit is no longer just to provide a time buffer, and its delay time is not a fixed value, but can be dynamically adjusted according to specific parameters such as the rate of change of the temperature field inside the microcrystalline semiconductor, the local conductivity of the N-type and P-type regions, and the electron-hole state density. When the linkage switching switch 15 disconnects the DC power supply 16, the delay control unit starts the timer countdown while monitoring the feedback data of the internal temperature sensor and the electric field strength sensor. Once it is sensed that the specific local heat diffusion rate and charge settlement rate reach a predetermined stable threshold, the delay time will automatically end, indicating that the third capacitor 14 is connected. In this way, the delay time is not set arbitrarily, but is strictly determined dynamically according to the charge and heat distribution characteristics of the microcrystalline semiconductor in the short free relaxation stage after power failure, so as to achieve an optimal state that does not consume too much time and ensures that electrons can successfully host holes.

[0114] Exemplarily, a temperature sensor and an electric field strength sensor are embedded inside the microcrystalline semiconductor battery, and these sensors collect the local temperature gradient and electric field strength changes inside the N-type and P-type microcrystalline semiconductor materials in real time. The MCU in the control module has obtained reference parameters for determining the charge stability state from the memory unit before the DC power supply 16 is about to be disconnected, including:

[0115] The threshold of the local heat diffusion rate (for example: ΔT / Δt≤0.5K / ms, where ΔT represents the temperature change and Δt represents the time interval. ΔT / Δt reflects the rate of change of temperature per unit time and is an important parameter for judging system stability and heat dissipation performance.);

[0116] The threshold of charge settlement rate (hole-electron recombination rate tends to be stable, for example: the rate of change of hole density in a certain area is less than 1% / ms);

[0117] Electric field intensity fluctuation threshold (for example, the local electric field intensity changes by less than 5% within 10ms);

[0118] When the linkage switch 15 disconnects the DC power supply 16, the delay control unit starts the internal timer to start timing, and the MCU starts to monitor the data of each sensor at a high-speed cycle (for example, sampling once every 0.5ms):

[0119] The temperature sensor is located at a key position in the adjacent area of ​​the N-type and P-type semiconductors (such as the center of the electron migration path). After the power is disconnected, the electron migration originally driven by the current is suppressed, and the system begins to relax naturally. At this time, the MCU continues to read the temperature data and calculates the short-term temperature change rate (ΔT / Δt). In the early stage, due to the readjustment of the electron distribution, a transition period of rapid temperature change may occur locally. Once ΔT / Δt is significantly reduced and stabilized below the preset threshold (such as ΔT / Δt is less than 0.5K / ms for 3 consecutive sampling periods), the MCU can assume that the heat diffusion rate is gradually stabilizing and the system no longer has significant residual heat fluctuations.

[0120] The electric field strength sensor is used to detect the strength and uniformity of the electric field in a specific area of ​​a microcrystalline semiconductor. When the DC power supply 16 is disconnected, the distribution of internal electrons and holes changes from the external electric field balance to the built-in electric field balance. This process involves the electrons gradually entering the corresponding hole positions and forming a relatively stable charge state. The MCU obtains local electric field data through a multi-point electric field sensor, and compares the data with the hole density change reference model established during the previous calibration period to estimate the change trend of the hole density and charge settlement rate. When the MCU detects that the electric field strength fluctuation amplitude is reduced to a predetermined standard (for example, less than 5% of the variation range) and is stable for more than a minimum duration (such as 5 to 10 ms) during a number of consecutive samplings (such as 10 times), it can be determined that the electrons have basically completed the redistribution and settlement of holes, and the internal charge is gradually balancing.

[0121] During the detection process, the MCU combines the judgment conditions of heat diffusion and charge settlement, and adopts a logical judgment method: only when all target threshold conditions are met at the same time (that is, the heat diffusion rate reaches the stable threshold, the electric field fluctuation drops to the low amplitude range, and the electron-hole distribution stabilizes), the MCU sends an end delay signal to the delay control unit. This process may be shorter or longer than the preset delay time. For example, if the ambient temperature is high in a certain operation, the heat diffusion is faster, and the conditions are met within 10ms, then the delay control unit immediately ends the delay after 10ms and turns on the third capacitor 14; conversely, if the ambient temperature is low or there is a local high-density charge inside the semiconductor that takes a longer time to relax, the MCU may detect the parameter stable state after 30ms, and the delay control unit ends the delay after 30ms and turns on the third capacitor 14.

[0122] In this way, when the linkage switch 15 disconnects the DC power supply 16, the delay time is no longer a fixed value, but is determined by the real state parameters inside the microcrystalline semiconductor. This ensures that the system accurately finds the best access time without excessively prolonging the waiting time (wasting time and reducing the system response speed) or blindly connecting the third capacitor 14 in advance (which may cause charge imbalance or thermal mutation), so as to achieve smooth electron-hole hosting and smooth reconstruction of the electric field.

[0123] In this way, through the parameter cache of the above-mentioned memory unit, the advance instruction output of the preloading unit, and the timing buffering of the delay control unit, the control module provided by this embodiment can effectively reduce the risk of instantaneous electric field disturbance and thermal mutation during the process of switching the battery from the charging state to the stable discharge state, thereby achieving a more stable electron-hole balance. This operation process does not require manual intervention, and the MCU can automatically complete it according to the built-in algorithm and real-time sensor data, thereby improving the reliability and service life of the system.

[0124] It should be understood that in various embodiments of the present invention, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0125] It should be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and / or other information.

[0126] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed in the present invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0127] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0128] The preferred embodiments of the present invention disclosed above are only used to help explain the present application. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to only specific implementation methods. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can well understand and use the present application. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. A microcrystalline semiconductor storage battery, characterized in that: include: An N-type microcrystalline semiconductor and a P-type microcrystalline semiconductor, wherein the N-type microcrystalline semiconductor and the P-type microcrystalline semiconductor are respectively placed in respective insulating volumes and are respectively provided with current inlet and outlet terminals; A unidirectional electronic component, wherein the positive electrode of the unidirectional electronic component is connected to the current outlet of the P-type microcrystalline semiconductor through a wire, and the negative electrode of the unidirectional electronic component is connected to the current inlet of the N-type microcrystalline semiconductor through a wire; a first wiring device and a second wiring device, wherein the first wiring device is connected to the current charging and discharging input and output terminals of the N-type microcrystalline semiconductor, and the second wiring device is connected to the current charging and discharging input and output terminals of the P-type microcrystalline semiconductor; Wherein, the first wiring device and the second wiring device are used to connect an electrical load, a charging device and a DC power supply.

2. A microcrystalline semiconductor storage battery according to claim 1, characterized in that: Also includes: a first capacitor, wherein the second wiring device is connected to a negative electrode of the first capacitor; a second capacitor, wherein the first wiring device is connected to a positive electrode of the second capacitor; A linkage switching switch, wherein the negative electrode of the first capacitor and the positive electrode of the second capacitor are respectively connected to the linkage switching switch through wires; a third capacitor, wherein the positive electrode of the third capacitor is connected to the positive electrode of the first capacitor through the linkage switching switch, and the negative electrode of the third capacitor is connected to the negative electrode of the second capacitor through the linkage switching switch; Wherein, in response to the battery being in the charging process, the linkage switching switch turns on the DC power supply, and the first capacitor and the second capacitor achieve charge balance; In response to the completion of charging of the storage battery, the linkage switching switch disconnects the DC power supply and reopens the positive and negative electrodes of the third capacitor.

3. A microcrystalline semiconductor storage battery according to claim 2, characterized in that: Also includes: A linkage switch is provided between the second wiring device and the negative electrode of the first capacitor and between the first wiring device and the positive electrode of the second capacitor.

4. A microcrystalline semiconductor storage battery according to claim 3, characterized in that: The first capacitor, the second capacitor and the third capacitor are all super capacitors, and the capacity of the third capacitor is greater than the capacity of the first capacitor and the second capacitor.

5. A microcrystalline semiconductor storage battery according to claim 4, characterized in that: The distance between the positive and negative electrodes of the first capacitor and the second capacitor can be adjusted synchronously, so as to realize the re-transfer and adjustment of the parallel electric field force.

6. A microcrystalline semiconductor storage battery according to claim 5, characterized in that: The unidirectional electronic component includes: a plurality of diodes connected in parallel or a plurality of power diodes connected in parallel.

7. A microcrystalline semiconductor storage battery according to claim 6, characterized in that: Also includes: A first heat exchange device, disposed on the P-type microcrystalline semiconductor; A second heat exchange device is provided on the N-type microcrystalline semiconductor; The heat exchange device may be arranged in the following manners: arranged in the microcrystalline semiconductor or arranged on the external wall of the microcrystalline semiconductor.

8. A microcrystalline semiconductor storage battery according to claim 7, characterized in that: Also includes: A radiator, wherein the inlet of the first heat exchange device is connected to the outlet of the radiator through a pipeline; A surface cooler, wherein the inlet of the second heat exchange device is connected to the outlet of the surface cooler through a pipeline; a first circulation pump, wherein the outlet of the first heat exchange device is connected to the inlet of the first circulation pump through a pipeline, and the outlet of the first circulation pump is connected to the inlet of the radiator through a pipeline; A second circulation pump, wherein the outlet of the second heat exchange device is connected to the inlet of the second circulation pump through a pipeline, and the outlet of the second circulation pump is connected to the inlet of the surface cooler through a pipeline.

9. A microcrystalline semiconductor storage battery according to claim 8, characterized in that: The negative electrode of the N-type microcrystalline semiconductor is connected to the negative electrode of the DC power supply, and the positive electrode of the P-type microcrystalline semiconductor is connected to the positive electrode of the DC power supply, so as to realize cooling and heating of the microcrystalline semiconductor.

10. The microcrystalline semiconductor storage battery according to claim 9, characterized in that: Also includes: A control module, the control module comprising: a memory unit, used for storing charge balance parameters, electric field adjustment strategies and capacitor spacing adjustment instructions before the linkage switch is switched from a charging state to a state where the DC power supply is disconnected and the third capacitor is turned on; a preloading unit, configured to output the charge balance parameter, the electric field adjustment strategy and the capacitor spacing adjustment instruction stored in the memory unit to the control loop of the first capacitor and the second capacitor when the linkage switch switches states; The delay control unit is used to set a predetermined delay time between the linkage switching switch disconnecting the DC power supply and connecting the third capacitor.

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