SIP (Session Initiation Protocol) module integrated straight wave amplifier

Abstract

An SIP module integrated direct wave amplifier comprises a power supply control module, an X-band down-conversion module and an L-band down-conversion module, the power supply control module provides attenuation control signals and a low-ripple power supply for the X-band down-conversion module and the L-band down-conversion module, the X-band down-conversion module performs primary frequency conversion on externally received radio frequency signals, and the L-band down-conversion module performs secondary frequency conversion on the externally received radio frequency signals. The L-band down-conversion module performs secondary frequency conversion on the radio frequency signal subjected to primary frequency conversion by the X-band down-conversion module, the two down-conversion modules are arranged to realize structure modularization and standardization by adopting a SiP modularization mode, and each module is independent in function, so that the structure is simple, the cost is low, and the cost is low. Meanwhile, the serial-parallel conversion chip control circuit is adopted to control the numerical control attenuator to meet the requirements for high gain and large dynamic range of the direct wave amplifier, the architecture and the number of control circuits are simplified, and the circuit is easy to build, easy to use, convenient to integrate and high in selection flexibility.

Description

Technical Field

[0001] The invention belongs to the technical field of direct wave amplifiers, and in particular relates to a SIP module integrated direct wave amplifier. Background Art

[0002] With the development of modern wireless communication technology, direct wave amplifiers are an important part of radar systems as RF receiving front ends. They have received increasing attention and applications in the fields of communications, microelectronic systems, and electronic countermeasures. Their main function is to amplify, convert, and filter the external direct wave RF signals, and then output direct wave intermediate frequency signals to digital processors. The development of direct wave amplifiers is mainly restricted by RF devices. Direct wave amplifiers mainly include RF devices such as low noise amplifiers, attenuators, filters, and mixers. With the development of microwave circuits, microwave circuits have evolved from the initial three-dimensional waveguide circuits to planar microwave circuits, and microwave hybrid integrated circuits (HMICs) have come into being; followed by the maturity of semiconductor devices and the development of process technology, the emergence of microwave monolithic integrated circuits (MMICs) has made RF devices leap forward in miniaturization and high performance. To date, system-on-chip (SOC) technology, system-in-package (SIP) technology, and system-in-package (SOP) technology have become research hotspots in the field of electronics at home and abroad, and RF devices have achieved good results in high integration and ultra-miniaturization.

[0003] However, with the development of electronic warfare and microelectronics technology, the performance requirements of radar receivers are constantly increasing. The modularization, miniaturization and standardized design of the RF receiving front end have become the basic requirements for the engineering design of high-performance radar receiving systems. However, the existing technology has not formed a modular and standardized technical solution, and has only made improvements in miniaturization.

[0004] For example, the patent document with the publication number CN106374840B specifically discloses a radio frequency conversion chip, including: a first mixer, a first amplifier, an attenuator, a filter, a second amplifier, a phase shifter, and a second mixer packaged on a substrate, wherein the bare tube cores of the mixer, the amplifier, the attenuator, the filter, and the phase shifter are bonded to the exposed soldering points of the substrate by gold wires or the bare tube cores are directly bonded to the bare tube cores by gold wires to form a radio frequency path; the input radio frequency signal passes through the first mixer, the first amplifier, the attenuator, the filter, the second amplifier, the phase shifter, and the second mixer, and then outputs as an intermediate frequency signal. The use of bare tube core packaging to integrate a single SIP chip solves the problems of large size, large weight, high power consumption, and long mass production cycle of the down-conversion component.

[0005] For example, the patent document with publication number CN203661047U specifically discloses a 2.4G direct down-conversion receiver RF front-end device, including a 2.4G RF signal input circuit, a bandpass filter circuit and a low-noise amplifier connected in sequence, the low-noise amplifier is connected to two parallel direct down-conversion circuits, a phase-locked loop frequency synthesis circuit is provided between the two direct down-conversion circuits, and a gain amplifier circuit, a filter circuit, an analog-to-digital conversion circuit and a DSP processor are provided in sequence after the direct down-conversion circuit. The structure is simple and easy to integrate; most of the gain of the received signal is completed in the baseband, which reduces the system power consumption.

[0006] For example, the patent document with the publication number CN205051653U specifically discloses a 6-18GHz down-conversion component, including a transceiver switch, a limiting low noise amplifier, a pre-selection filter unit, a primary mixer, a first intermediate frequency switch filter, a secondary mixer, a digitally controlled attenuation unit, a second intermediate frequency filter, a third mixer and a third intermediate frequency amplification unit connected in sequence, and also includes two local oscillation phase shift units, which are connected to the secondary mixer. The pre-selection filter unit adopts a MEMS filter, which greatly reduces the size of the component; each functional unit is directly assembled using a chip, with high integration and compact structure; and the circuit size is small.

[0007] In summary, the existing technology has not solved the technical problems of modularization and standardization of the RF receiving front end. In actual use, the scope of use is small and the flexibility of selection is low. Therefore, it is necessary to design a modular and standardized RF receiving front end to improve the scope of use and flexibility. Summary of the invention

[0008] To solve the above technical problems, the present application provides a SIP module integrated direct wave amplifier, comprising: a power control module, an X-band down-conversion module and an L-band down-conversion module, wherein the power control module provides an attenuation control signal and a low ripple power supply for the X-band down-conversion module and the L-band down-conversion module, the X-band down-conversion module performs a primary frequency conversion on an externally received radio frequency signal, and the L-band down-conversion module performs a secondary frequency conversion on the radio frequency signal that has undergone the primary frequency conversion of the X-band down-conversion module.

[0009] Furthermore, the power control module converts the external SPI serial port control signal into the attenuation control signal through a serial-to-parallel conversion chip.

[0010] Furthermore, the external SPI serial port control signal includes a clock signal, an enable signal and a serial port signal.

[0011] Furthermore, the primary frequency conversion of the X-band down-conversion module comprises the following steps:

[0012] A limiter is set at the front end to obtain the externally received radio frequency signal; when the radio frequency signal is less than the limiter threshold, the limiter does not respond; when the radio frequency signal is greater than the limiter threshold, the limiter responds and limits the radio frequency signal to below the limiter threshold and inputs it into the first-stage digitally controlled attenuator;

[0013] Under the action of the attenuation control signal, the first-stage digitally controlled attenuator is connected in series with the fixed attenuator to attenuate the radio frequency signal; then the attenuated radio frequency signal is transmitted to the first-stage low-noise amplifier to amplify the attenuated radio frequency signal; and then the attenuated radio frequency signal is transmitted to mixer A through filter A;

[0014] At this time, the local oscillator signal A is transmitted to the mixer A through the amplifier A, and the local oscillator signal A and the radio frequency signal are frequency-converted by the mixer A to output an intermediate frequency signal, which is transmitted to the second-stage low-noise amplifier through the filter B for gain supplementation and then transmitted to the L-band down-conversion module through the temperature-compensated attenuator A.

[0015] Furthermore, the secondary frequency conversion of the L-band down-conversion module comprises the following steps:

[0016] A second-stage digitally controlled attenuator is arranged at the front end of the L-band down-conversion module, and the second-stage digitally controlled attenuator attenuates the radio frequency signal transmitted from the temperature-compensated attenuator A by means of the acquired attenuation control signal;

[0017] Then it is amplified by the third-stage low-noise amplifier and enters the mixer B to perform frequency conversion with the local oscillator signal B amplified by the amplifier B to output an intermediate frequency signal;

[0018] Then, after filtering out the intermediate frequency noise and stray harmonic signals generated after the frequency conversion through the filter C, the fourth-stage low-noise amplifier, the temperature-compensated attenuator B and the filter D, the signal is transmitted to the third-stage digitally controlled attenuator, and the third-stage digitally controlled attenuator attenuates the radio frequency signal again through the acquired attenuation control signal;

[0019] Finally, the radio frequency signal is attenuated again by the third-stage digitally controlled attenuator, transmitted to the amplifier for gain compensation, and then outputs the target intermediate frequency signal through the coupler.

[0020] Furthermore, the attenuation dynamic range controlled by the first-stage digitally controlled attenuator is within 16 dB.

[0021] Furthermore, the attenuation dynamic range controlled by the second-stage digitally controlled attenuator and the third-stage digitally controlled attenuator are both within 31.5 dB, with a step of 0.5 dB.

[0022] Furthermore, the limiting threshold set by the limiter is 17.5dBm.

[0023] Furthermore, the X-band down-conversion module realizes the functions of limiting, filtering, amplifying, and down-converting signals within the 8-12 GHz frequency band, and the L-band down-conversion module realizes the functions of filtering, amplifying, attenuating, and down-converting signals within the 1-2 GHz frequency band.

[0024] Furthermore, the attenuation control signal is acquired by the first-stage digitally controlled attenuator, the second-stage digitally controlled attenuator and the third-stage digitally controlled attenuator, and attenuation is performed synchronously.

[0025] The beneficial effects of the present invention are:

[0026] (1) The overall design adopts three modules, namely, X-band down-conversion module, L-band down-conversion module and power control module, forming a modular system with independent functions of each module, which simplifies the architecture and quantity of the control circuit. The circuit is simple to build and use, easy to integrate and highly flexible to select.

[0027] (2) The SiP modular design is adopted, and an X-band down-conversion module and an L-band down-conversion module are set up. The gain and noise coefficient of each level of the amplifier circuit are reasonably allocated, and low-noise, wide-band, and large-dynamic devices are selected. The two down-conversion modules are standardized and normalized in structure and performance. The corresponding down-conversion module can be selected according to actual needs. In addition, the X-band down-conversion module and the L-band down-conversion module are standardized in design, with fixed size and high versatility.

[0028] (3) A serial-to-parallel conversion chip is used to build a serial-to-parallel conversion circuit to provide an attenuation control signal, thereby achieving the requirements of high gain and large dynamic range of the direct wave amplifier, overcoming the problems of complex structure and high cost of serial-to-parallel signal conversion. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a principle block diagram of a SIP module integrated direct wave amplifier provided according to an embodiment of the present invention;

[0030] Explanation of the accompanying numbers: 1-serial-to-parallel conversion chip, 2-limiter, 3-first-stage digitally controlled attenuator, 4-fixed attenuator, 5-first-stage low-noise amplifier, 6-filter A, 7-mixer A, 8-filter B, 9-second-stage low-noise amplifier, 10-temperature compensated attenuator A, 11-second-stage digitally controlled attenuator, 12-third-stage low-noise amplifier, 13-mixer B, 14 filter C, 15-fourth-stage low-noise amplifier, 16-temperature compensated attenuator B, 17-filter D, 18-third-stage digitally controlled attenuator, 19-amplifier A, 20-coupler, 21-local oscillator signal A, 22-amplifier B, 23-local oscillator signal B, 24-amplifier C, 25-linear voltage regulator chip. DETAILED DESCRIPTION

[0031] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.

[0032] The embodiment of the present invention provides a SIP module integrated direct wave amplifier, which adopts the SiP modularization method, sets two down-conversion modules with standardized structure and normalized performance, reasonably allocates the gain and noise coefficient of each level of amplification circuit, selects low-noise, wide-band, and large dynamic devices, and adopts a serial-to-parallel conversion chip control circuit to control a digitally controlled attenuator to achieve the requirements of high gain and large dynamic range of the direct wave amplifier.

[0033] The following is attached to the instruction manual Figure 1 The specific implementation of the present invention is described in detail.

[0034] The embodiment of the present invention provides a SIP module integrated direct wave amplifier, including: a power control module, an X-band down-conversion module and an L-band down-conversion module, wherein the power control module provides an attenuation control signal and a low ripple power supply for the X-band down-conversion module and the L-band down-conversion module, wherein the X-band down-conversion module performs a primary frequency conversion on an externally received radio frequency signal, and the L-band down-conversion module performs a secondary frequency conversion on a radio frequency signal that has undergone a primary frequency conversion by the X-band down-conversion module, and adopts a SiP modular design method, wherein two down-conversion modules are set to be standardized in structure and normalized in performance, and each module has independent functions. The X-band down-conversion module and the L-band down-conversion module are both 16mm×11mm×3mm in size, and can process the limiting, amplification, filtering, and down-conversion of the direct wave signal at the front end of the radio frequency receiving, and the operating frequency covers 8-12GHz, providing a suitable size of intermediate frequency signal for the back-end digital signal processor.

[0035] In this embodiment, the power control module converts the external SPI serial port control signal into the attenuation control signal through the serial-to-parallel conversion chip 1, which simplifies the architecture and number of the control circuit. The serial-to-parallel conversion chip control circuit is used to control the digitally controlled attenuator to achieve the requirements of high gain and large dynamic range of the direct wave amplifier. The circuit is simple to build and use, and overcomes the problems of complex structure and high cost of serial-to-parallel signal conversion.

[0036] The power control module converts the external power into a suitable low-ripple power supply through the linear voltage regulator chip 25 to power the active devices in the X-band down-conversion module and the L-band down-conversion module.

[0037] In this embodiment, the external SPI serial port control signal includes a clock signal, an enable signal and a serial port signal.

[0038] In this embodiment, the first-level frequency conversion of the X-band down-conversion module includes the following steps:

[0039] A limiter 2 is provided at the front end for acquiring an externally received radio frequency signal; when the radio frequency signal is less than a threshold value of the limiter 2, the limiter 2 does not respond; when the radio frequency signal is greater than the threshold value of the limiter 2, the limiter 2 responds and limits the radio frequency signal to below the limiter threshold value and inputs it into the first-stage digitally controlled attenuator 3;

[0040] Under the action of the attenuation control signal, the first-stage digitally controlled attenuator 3 is connected in series with the fixed attenuator 4 to attenuate the RF signal; then the attenuated RF signal is transmitted to the first-stage low-noise amplifier 5 to amplify the signal; and then the attenuated RF signal is transmitted to the mixer A7 through the filter A6;

[0041] At this time, the local oscillator signal A21 is transmitted to the mixer A7 through the amplifier B22, and the local oscillator signal A and the RF signal are frequency-converted by the mixer A7 to output an intermediate frequency signal, which is transmitted to the L-band down-conversion module through the filter B8 for line gain supplement and then transmitted through the temperature compensated attenuator A10.

[0042] The X-band down-conversion module includes a limiter 2, a first-stage digitally controlled attenuator 3, a fixed attenuator 4, a first-stage low-noise amplifier 5, a filter A6, a mixer A7, a filter B8, a second-stage low-noise amplifier 9 and a temperature-compensated attenuator A10.

[0043] The limiter 2 is provided to prevent the signal from being transmitted along the front-stage RF link to the inside of the module when a high-energy, high-current signal is received, thereby breaking down and burning the first-stage low-noise amplifier 5 chip of the front stage, causing irreparable damage to the entire circuit.

[0044] Arranging the first-stage digitally controlled attenuator 3 and the fixed attenuator 4 in series can achieve a larger dynamic range of the circuit, and improve the anti-blocking interference capability and input signal range requirement of the RF receiving front end.

[0045] Placing the filter A6 and the filter B8 before and after the mixer A7 can suppress unnecessary signal components to the greatest extent.

[0046] The second stage low noise amplifier 9 controls the system noise and compensates for the gain of the system receiving link, so that the gain of the entire link is reasonably distributed. Placing a temperature compensation attenuator A10 at the end can compensate the gain change of the low noise amplifier in high and low temperature environments to the greatest extent.

[0047] In this embodiment, the secondary frequency conversion of the L-band down-conversion module includes the following steps:

[0048] A second-stage digitally controlled attenuator 11 is provided at the front end of the L-band down-conversion module, and the second-stage digitally controlled attenuator 11 attenuates the radio frequency signal transmitted from the temperature-compensated attenuator A10 by means of the acquired attenuation control signal;

[0049] Then it is amplified by the third-stage low-noise amplifier 12, enters the mixer B13, and is frequency-converted with the local oscillator signal B23 amplified by the amplifier C24 to output an intermediate frequency signal;

[0050] Then, after filtering out the intermediate frequency noise and stray harmonic signals generated after the frequency conversion through the filter C14, the fourth-stage low-noise amplifier 15, the temperature-compensated attenuator B16 and the filter D17, the signal is transmitted to the third-stage digitally controlled attenuator 18, and the third-stage digitally controlled attenuator 18 attenuates the radio frequency signal again through the acquired attenuation control signal;

[0051] Finally, the RF signal is attenuated again by the third-stage digitally controlled attenuator 18 , and then transmitted to the amplifier A19 for gain compensation, and then outputs the target intermediate frequency signal through the coupler 20 .

[0052] The L-band down-conversion module includes a second-stage digitally controlled attenuator 11, a third-stage low-noise amplifier 12, a mixer B13, a filter C14, a fourth-stage low-noise amplifier 15, a temperature-compensated attenuator B16, a filter D17, a third-stage digitally controlled attenuator 18, an amplifier A19 and a coupler 20.

[0053] The second digital controlled attenuator 11 and the third digital controlled attenuator 18 are used in series to achieve 0.5dB attenuation step and 63dB attenuation to meet the large dynamic range requirements of the system. The third low noise amplifier 12 can meet the low noise requirements of the module.

[0054] The amplifier A19 is a final amplifier that compensates for the gain of the entire RF link. A coupler 20 is added at the end. The through port of the coupler 20 directly outputs the intermediate frequency signal after filtering and amplification to the RF receiving back end for signal processing and digital processing. The intermediate frequency signal output by the coupler 20 is sent to the detector.

[0055] In this embodiment, the attenuation dynamic range controlled by the first-stage digitally controlled attenuator 3 is within 16 dB.

[0056] In this embodiment, the attenuation dynamic range controlled by the second-stage digitally controlled attenuator 11 and the third-stage digitally controlled attenuator 18 are both within 31.5 dB, with a step of 0.5 dB.

[0057] In this embodiment, the limiting threshold set by the limiter 2 is 17.5dBm, which limits the signal power output greater than 17.5dBm to 17.5dBm. The anti-burning power of the limiter 2 is 10W (CW), which can protect the entire receiving link and prevent the device from being burned by external strong signals entering the link.

[0058] In this embodiment, the X-band down-conversion module implements the limiting, filtering, amplifying, and down-converting functions of signals in the 8-12 GHz frequency band, and the L-band down-conversion module implements the filtering, amplifying, attenuating, and down-converting functions of signals in the 1-2 GHz frequency band.

[0059] In this embodiment, the attenuation control signal is acquired by the first-stage digitally controlled attenuator 3 , the second-stage digitally controlled attenuator 11 and the third-stage digitally controlled attenuator 18 , and attenuation is performed synchronously.

[0060] In this embodiment, the first-stage low noise amplifier 5, the second-stage low noise amplifier 9, the third-stage low noise amplifier 12 and the fourth-stage low noise amplifier 15 can achieve a linear gain of 106 dB for the output signal, providing a weak signal amplification function for the entire link.

[0061] In this embodiment, the temperature compensating attenuator A10 and the temperature compensating attenuator B16 can compensate for the gain variation of the low noise amplifier in high and low temperature environments to the greatest extent, and ensure the gain flatness of the entire receiving link within the full temperature range.

[0062] In this embodiment, the Figure 1 Some of the device models used in the circuit are shown in Table 1:

[0063] Table 1 Part of the device list

[0064]

[0065] The above disclosure is only a specific embodiment of the present invention, but the present invention is not limited thereto, and any changes that can be conceived by those skilled in the art should fall within the protection scope of the present invention.

Claims

1. A SIP module integrated direct wave amplifier, characterized in that: include: A power control module, an X-band down-conversion module and an L-band down-conversion module, wherein the power control module provides an attenuation control signal and a low-ripple power supply for the X-band down-conversion module and the L-band down-conversion module, the X-band down-conversion module performs a primary frequency conversion on an externally received radio frequency signal, and the L-band down-conversion module performs a secondary frequency conversion on the radio frequency signal that has undergone a primary frequency conversion by the X-band down-conversion module.

2. The SIP module integrated direct wave amplifier according to claim 1, characterized in that: The power control module converts the external SPI serial port control signal into the attenuation control signal through a serial-to-parallel conversion chip (1).

3. The SIP module integrated direct wave amplifier as claimed in claim 2, characterized in that: The external SPI serial port control signal includes a clock signal, an enable signal and a serial port signal.

4. The SIP module integrated direct wave amplifier according to claim 1, characterized in that: The first-level frequency conversion of the X-band down-conversion module comprises the following steps: A limiter (2) is provided at the front end for acquiring a radio frequency signal received from the outside; when the radio frequency signal is less than a threshold value of the limiter (2), the limiter (2) does not respond; when the radio frequency signal is greater than the threshold value of the limiter (2), the limiter (2) responds and limits the radio frequency signal to below the threshold value of the limiter and inputs it into a first-stage digitally controlled attenuator (3); Under the action of the attenuation control signal, the first-stage digitally controlled attenuator (3) is connected in series with the fixed attenuator (4) to attenuate the radio frequency signal; the attenuated radio frequency signal is then transmitted to the first-stage low-noise amplifier (5) to amplify the attenuated radio frequency signal; and then transmitted to the mixer A (7) through the filter A (6); At this time, the local oscillator signal A (21) is transmitted to the mixer A (7) through the amplifier B (22), and the local oscillator signal A and the radio frequency signal are frequency-converted by the mixer A (7), and an intermediate frequency signal is output. The intermediate frequency signal is transmitted to the second-stage low noise amplifier (9) through the filter B (8) for gain compensation, and then transmitted to the L-band down-conversion module through the temperature-compensated attenuator A (10).

5. The SIP module integrated direct wave amplifier according to claim 1, characterized in that: The secondary frequency conversion of the L-band down-conversion module comprises the following steps: A second-stage digitally controlled attenuator (11) is arranged at the front end of the L-band down-conversion module, and the second-stage digitally controlled attenuator (11) attenuates the radio frequency signal transmitted from the temperature-compensated attenuator A (10) by means of the acquired attenuation control signal; Then, it is amplified by the third-stage low-noise amplifier (12), enters the mixer B (13), and undergoes frequency conversion with the local oscillator signal B (23) amplified by the amplifier C (24), and outputs an intermediate frequency signal; Subsequently, after filtering out the intermediate frequency noise and stray harmonic signals generated after the frequency conversion through the filter C (14), the fourth-stage low-noise amplifier (15), the temperature-compensated attenuator B (16) and the filter D (17), the signal is transmitted to the third-stage digitally controlled attenuator (18), and the third-stage digitally controlled attenuator (18) attenuates the radio frequency signal again by using the acquired attenuation control signal; Finally, the radio frequency signal is attenuated again by the third-stage digitally controlled attenuator (18), transmitted to the amplifier A (19) for gain compensation, and then outputs the target intermediate frequency signal through the coupler (20).

6. The SIP module integrated direct wave amplifier as claimed in claim 4, characterized in that: The attenuation dynamic range controlled by the first-stage digitally controlled attenuator (3) is within 16 dB.

7. The SIP module integrated direct wave amplifier as claimed in claim 5, characterized in that: The attenuation dynamic range controlled by the second-stage digitally controlled attenuator (11) and the third-stage digitally controlled attenuator (18) is both within 31.5 dB, with a step of 0.5 dB.

8. The SIP module integrated direct wave amplifier as claimed in claim 4, characterized in that: The limiter (2) sets a limit threshold of 17.5 dBm.

9. The SIP module integrated direct wave amplifier according to claim 1, characterized in that: The X-band down-conversion module realizes the functions of limiting, filtering, amplifying and down-converting signals in the 8-12 GHz frequency band, and the L-band down-conversion module realizes the functions of filtering, amplifying, attenuating and down-converting signals in the 1-2 GHz frequency band.

10. The SIP module integrated direct wave amplifier according to claim 1, characterized in that: The attenuation control signal is acquired by the first-stage digitally controlled attenuator (3), the second-stage digitally controlled attenuator (11) and the third-stage digitally controlled attenuator (18), and attenuation is performed synchronously.

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