Radio frequency front-end module and electronic equipment

Abstract

The embodiment of the invention provides a radio frequency front-end module and electronic equipment. The radio frequency front-end module comprises a substrate, a first radio frequency signal link, a second radio frequency signal link and a third radio frequency signal link, the first radio-frequency signal link and the second radio-frequency signal link can perform radio-frequency signal transmission at the same time, and the third radio-frequency signal link performs radio-frequency signal transmission with the first radio-frequency signal link and the second radio-frequency signal link at different time; the distance between the filters in the first radio frequency signal link and the second radio frequency signal link is greater than the distance between the filters in the third radio frequency signal link and the first radio frequency signal link and is greater than the distance between the filters in the third radio frequency signal link and the second radio frequency signal link; and / or the distance between the matching circuits in the first radio-frequency signal link and the second radio-frequency signal link is greater than the distance between the matching circuits in the third radio-frequency signal link and the first radio-frequency signal link and is greater than the distance between the matching circuits in the third radio-frequency signal link and the second radio-frequency signal link. The isolation degree among a plurality of radio frequency signal links supporting a carrier aggregation working mode can be improved, so that the radio frequency front-end module has relatively high performance.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic equipment. Background Art

[0002] In communication equipment, the RF front-end module refers to the part between the antenna and the transceiver, which usually includes a power amplifier, a switch, a low-noise amplifier, a filter, etc. Among them, the filter can form a receiving link with the low-noise amplifier, and can also form a transmitting link with the power amplifier.

[0003] With the continuous development of RF technology, there are more and more frequency bands in RF front-end modules. Some RF front-end modules can support carrier aggregation (CA) of multiple frequency bands, that is, they can simultaneously receive / transmit signals of multiple different frequency bands. If signals of different frequency bands are received and transmitted at the same time, crosstalk is likely to occur. Therefore, it is necessary to improve the isolation between multiple RF signal links that support the carrier aggregation working mode so that the RF front-end module has higher performance. Summary of the invention

[0004] The present application provides a radio frequency front-end module and an electronic device, which can improve the isolation between multiple radio frequency signal links supporting a carrier aggregation working mode, so that the radio frequency front-end module has higher performance.

[0005] In a first aspect, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module comprising:

[0006] substrate;

[0007] A first RF signal link, a second RF signal link and a third RF signal link are arranged on the substrate, the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can simultaneously transmit RF signals, and the third RF signal link and the first RF signal link and the second RF signal link transmit RF signals at different times;

[0008] Wherein, the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or

[0009] The distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit.

[0010] In a second aspect, an embodiment of the present application provides an electronic device, which includes the aforementioned radio frequency front-end module.

[0011] The RF front-end module and electronic device provided in the embodiment of the present application include: a substrate and a first RF signal link, a second RF signal link and a third RF signal link arranged on the substrate; the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can simultaneously transmit RF signals, and the third RF signal link and the first RF signal link and the second RF signal link can transmit RF signals at different times; wherein the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the matching circuit. It is possible to improve the isolation between multiple RF signal links supporting the carrier aggregation working mode, so that the RF front-end module has higher performance.

[0012] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory and cannot limit the disclosure of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0014] Figure 1 is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application;

[0015] Figures 2 to 10 is a schematic diagram of a radio frequency front-end module in some embodiments of the present application;

[0016] Fig.11It is a schematic block diagram of an electronic device provided in an embodiment of the present application.

[0017] Description of reference numerals:

[0018] 10. substrate; 11. first region; 12. second region; 13. first signal output port; 14. antenna port; 15. third region; 101. first substrate region; 102. second substrate region;

[0019] 20, first filter chip; 21, first output terminal; 22, second output terminal; 23, first input terminal; 24, second input terminal; 25, third input terminal; 211, first filter; 231, third filter; 241, fourth filter; 60, second filter chip; 61, second filter; 203, third filter chip;

[0020] 91. a first matching circuit; 92. a second matching circuit; 93. a third matching circuit; 94. a fourth matching circuit;

[0021] 201, fifth matching circuit; 30, input matching circuit; 31, second inductor; 32, third inductor; 33, fourth inductor; 40, output matching circuit; 41, first inductor; 42, first connecting line; 43, second connecting line; 44, third connecting line;

[0022] 50. Grounded metal film; 51. First metal film; 52. Second metal film; 53. Third metal film; 70. Matching circuit; 601. Sixth matching circuit; 80. Switch chip. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0025] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0026] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0027] See also Figure 1 , Figure 1 It is a schematic block diagram of a radio frequency front-end module provided in an embodiment of the present application.

[0028] like Figure 1 As shown, the RF front-end module includes: a substrate 10 and a first RF signal chain, a second RF signal chain and a third RF signal chain arranged on the substrate 10.

[0029] The RF front-end module may include an RF transmission link and an RF receiving link. The RF transmission link is mainly responsible for amplifying the power of the RF signal and transmitting it to the antenna port so that it can be sent out through the antenna; the RF transmission link mainly includes an RF power amplifier and a filter. The RF power amplifier is used to amplify the power of the RF signal, and the filter is used to filter the amplified RF signal to ensure the quality of the RF signal; the RF transmission link also includes a matching circuit, for example, a matching circuit connected between the RF power amplifier and the filter, and / or a matching circuit connected between the filter and the antenna; the matching circuit can ensure that the RF signal is transmitted with less loss in the RF transmission link.

[0030] The RF receiving link mainly includes a filter and a low noise amplifier. The filter is used to filter the RF signal received by the antenna to ensure the quality of the RF signal, and the low noise amplifier is used to amplify the filtered RF signal to improve the signal-to-noise ratio of the RF signal. The RF receiving link also includes a matching circuit, such as a matching circuit connected between the antenna and the filter, and / or a matching circuit connected between the filter and the low noise amplifier; the matching circuit can ensure that the RF signal is transmitted with less loss in the RF receiving link.

[0031] For ease of explanation, the embodiments of the present application are mainly described by taking the example that the first RF signal link, the second RF signal link and the third RF signal link are all RF receiving links.

[0032] The first RF signal chain includes a first filter 211 and a first matching circuit 91 , the second RF signal chain includes a second filter 61 and a second matching circuit 92 , and the third RF signal chain includes a third filter 231 and a third matching circuit 93 .

[0033] The filter is used to filter the radio frequency signal to improve the signal quality of the radio frequency signal.

[0034] Wherein, the filter includes a plurality of resonators, each of which may be a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator. Exemplarily, the resonator in the filter may be a Normal SAW resonator, a TC-SAW (Temperature compensated SAW) resonator, a resonator with a multilayer structure arranged below the piezoelectric layer, an X-BAR (transversely excited film bulk acoustic wave) resonator, a DMS (Double-mode SAW) resonator, a longitudinally coupled surface acoustic wave resonator, etc. The filter may be integrated in a filter chip, for example, the filter chip may integrate one or more filters.

[0035] In each RF signal chain, the matching circuit is connected to the corresponding filter. In some embodiments, the matching circuit in the RF signal chain includes a matching circuit connected to the input end of the filter, and / or a matching circuit connected to the output end of the filter. The matching circuit connected to the input end of the filter can be called an input matching circuit, and the input matching circuit is used to impedance match the RF signal input to the filter to reduce the loss during the transmission of the RF signal; the matching circuit connected to the output end of the filter can be called an output matching circuit, and the output matching circuit is used to impedance match the RF signal output by the filter to reduce the loss during the transmission of the RF signal. For ease of explanation, the embodiments of the present application are mainly described by taking the input matching circuit as an example.

[0036] The first RF signal link and the second RF signal link can transmit RF signals at the same time, and the third RF signal link transmits RF signals at different times from the first RF signal link and the second RF signal link. That is, the RF signal transmitted by the first RF signal link in the RF front-end module is carrier aggregated with the RF signal transmitted by the second RF signal link, and the RF signal transmitted by the third RF signal link is not carrier aggregated with the RF signal transmitted by the first RF signal link, and the RF signal transmitted by the third RF signal link is not carrier aggregated with the RF signal transmitted by the second RF signal link.

[0037] See also Figure 1 , the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the second filter 61.

[0038] By increasing the distance between multiple filters that support the carrier aggregation working mode, the filters working simultaneously can be isolated, and the crosstalk between different RF signal links when transmitting RF signals of different frequency bands at the same time can be reduced, thereby improving the performance of the RF front-end module.

[0039] In some embodiments, see Figure 3 , the distances between different filters include: the distances between the input ends (IN) of different filters, and / or the distances between the output ends (OUT) of different filters. For example, the distance between the input end of the first filter 211 and the input end of the second filter 61 is greater than the distance between the input end of the third filter 231 and the input end of the first filter 211; or, the distance between the input end of the first filter 211 and the input end of the second filter 61 is greater than the distance between the input end of the third filter 231 and the input end of the second filter 61; or, the distance between the input end of the first filter 211 and the input end of the second filter 61 is greater than the distance between the input end of the third filter 231 and the input end of the first filter 211, and the distance between the input end of the first filter 211 and the input end of the second filter 61 is greater than the distance between the input end of the third filter 231 and the input end of the second filter 61.

[0040] See also Figure 1 or Figure 3 , the distance between the first matching circuit 91 and the second matching circuit 92 is greater than the distance between the third matching circuit 93 and the first matching circuit 91; and the distance between the first matching circuit 91 and the second matching circuit 92 is greater than the distance between the third matching circuit 93 and the matching circuit.

[0041] By increasing the distance between the matching circuits in multiple RF signal links that support the carrier aggregation working mode, the crosstalk between different RF signal links when simultaneously transmitting RF signals of different frequency bands can be reduced, thereby improving the performance of the RF front-end module.

[0042] In some embodiments, the distance between different matching circuits includes: the distance between the input ends of different matching circuits, and / or the distance between the output ends of different matching circuits, and / or the distance between the centers of different matching circuits. Exemplarily, if the input matching inductor of the input matching circuit is a metal coil wound in a ring shape, the distance between different matching circuits may be the distance between the centers of different metal coils.

[0043] For example, see Figure 2The first matching circuit 91 includes a first input matching circuit, the second matching circuit 92 includes a second input matching circuit, and the third matching circuit 93 includes a third input matching circuit; each input matching circuit is connected to the input end of the corresponding filter.

[0044] The RF front-end module also includes an antenna port 14 and a switch chip 80, which are arranged on the substrate 10. The switch chip 80 includes at least a first switch path, a second switch path and a third switch path, the first switch path is connected between the antenna port 14 and the first filter 211, the second switch path is connected between the antenna port 14 and the second filter 61, and the third switch path is connected between the antenna port 14 and the third filter 231; the switch chip 80 is used to conduct the corresponding switch path according to the frequency band of the RF signal received by the antenna port 14, so as to transmit the received RF signal to the filter corresponding to the conducted switch path.

[0045] Exemplarily, the input end of the first filter 211 is grounded through a first input matching circuit, the input end of the second filter 61 is grounded through a second input matching circuit, and the input end of the third filter 231 is grounded through a third input matching circuit.

[0046] For example, the input matching circuit includes an input matching inductor. The input matching circuit is connected in parallel between the switch chip 80 and the corresponding filter. For example, the input matching circuit includes an inductor, a first end of the inductor in the input matching circuit is connected to the input end of the filter, and a second end of the inductor is grounded, so as to perform impedance matching on the RF signal between the switch chip 80 and the filter, so as to reduce the loss during the transmission of the RF signal.

[0047] Optionally, as an implementation, the input matching inductor may include a metal trace inductor, which is formed on one or more metal layers of the substrate 10. The metal trace inductor may be a coil-shaped inductor, a straight metal trace, a zigzag metal trace, or a curved metal trace. As another implementation, the input matching circuit may also use a surface mount device (SMD) inductor.

[0048] In some embodiments, Figure 3 As shown, the first filter 211 is disposed on the first filter chip 20, the second filter 61 is disposed on the second filter chip 60, and the third filter 231 is disposed on the third filter chip 203. One or more filters may be integrated in each filter chip.

[0049] The first filter 211 and the second filter 61 supporting the carrier aggregation working mode are set in different filter chips, which can enhance the isolation effect between the first filter 211 and the second filter 61, so as to further reduce the crosstalk between different RF signal links when working in the carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0050] The distance between the first filter chip 20 and the second filter chip 60 is greater than the distance between the third filter chip 203 and the first filter chip 20 and the distance between the third filter chip 203 and the second filter chip 60. Thus, the distance between the first filter 211 and the second filter 61 can be greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 can be greater than the distance between the third filter 231 and the second filter 61.

[0051] In other embodiments, Figure 4 As shown, the first filter 211 and the third filter 231 are arranged on the first filter chip 20, the second filter 61 is arranged on the second filter chip 60, and the second filter chip 60 is arranged separately from the first filter chip 20. The first filter 211 and the second filter 61 supporting the carrier aggregation working mode are arranged in different filter chips, which can enhance the isolation effect between the first filter 211 and the second filter 61, so as to further reduce the crosstalk between different RF signal links when working in the carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0052] Among them, the first filter chip 20 includes a first end (such as an upper end) and a second end (such as a lower end) that are relatively arranged, and in the first filter chip 20, the first filter 211 is arranged closer to the first end of the first filter chip 20 than the third filter 231, and the second end of the first filter chip 20 is closer to the second filter chip 60 than the first end of the first filter chip 20. Therefore, the distance between the first filter 211 and the second filter 61 can be greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the second filter 61. By increasing the distance between multiple filters supporting the carrier aggregation working mode, the filters supporting the carrier aggregation working mode can be isolated, and the crosstalk between different RF signal links when working in the carrier aggregation mode can be reduced, thereby improving the performance of the RF front-end module.

[0053] For example, see Figure 3 or Figure 4, the projection of the first filter chip 20 along the first direction does not overlap with the projection of the second filter chip 60 along the first direction at least partially; and / or, the projection of the first filter chip 20 along the second direction does not overlap with the projection of the second filter chip 60 along the second direction; the first direction is parallel to the first side of the substrate 10, the second direction is parallel to the second side of the substrate 10, and the first side of the substrate 10 is adjacent to the second side.

[0054] For example, see Figure 3 or Figure 4 , the first direction is horizontal, the first side of the substrate 10 is the upper side or the lower side of the substrate 10; the second direction is vertical, the second side of the substrate 10 is the left side or the right side of the substrate 10; the projections of the first filter chip 20 and the second filter chip 60 on the left side of the substrate 10 along the first direction do not overlap, the projections of the first filter chip 20 and the second filter chip 60 on the right side of the substrate 10 along the first direction do not overlap, the projections of the first filter chip 20 and the second filter chip 60 on the upper side of the substrate 10 along the second direction do not overlap, and the projections of the first filter chip 20 and the second filter chip 60 on the lower side of the substrate 10 along the second direction do not overlap; that is, the positions of the first filter chip 20 and the second filter chip 60 in the first direction and the second direction are staggered. The positions of the first filter chip 20 and the second filter chip 60 in at least one direction are staggered, which can further enhance the isolation effect between the first filter 211 and the second filter 61, so as to further reduce the crosstalk between different RF signal links when working in the carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0055] In some embodiments, see Figure 4 The RF front-end module also includes a fourth RF signal chain, the fourth RF signal chain includes a fourth filter 241 and a fourth matching circuit 94, and the fourth matching circuit 94 includes at least a fourth input matching circuit.

[0056] The fourth radio frequency signal link can transmit radio frequency signals simultaneously with the first radio frequency signal link, that is, the frequency band of the fourth radio frequency signal link is carrier aggregated with the frequency band of the first radio frequency signal link.

[0057] Among them, the fourth RF signal link transmits RF signals at different times from the second RF signal link and the third RF signal link, the frequency band of the fourth RF signal link and the frequency band of the second RF signal link are not carrier aggregated, and the frequency band of the fourth RF signal link and the frequency band of the third RF signal link are not carrier aggregated.

[0058] like Figure 4 As shown, the fourth filter 241 and the first filter 211 are arranged on the first filter chip 20; the first filter chip 20 includes a first end and a second end arranged opposite to each other.

[0059] Optionally, the first filter 211 is arranged at the first end (such as the upper end) of the first filter chip 20, and the fourth filter 241 is arranged at the second end (such as the lower end) of the first filter chip 20; and / or in the first filter chip 20, at least one filter (such as the third filter 231 or a filter other than the first filter 211, the third filter 231, and the fourth filter 241) is arranged between the first filter 211 and the fourth filter 241.

[0060] For the same filter chip, by setting the fourth filter 241 supporting the carrier aggregation working mode and the first filter 211 at opposite ends of the filter chip, that is, increasing the distance between the fourth filter 241 supporting the carrier aggregation working mode and the first filter 211, and / or setting other filters between the fourth filter 241 and the first filter 211 for isolation, the crosstalk between different RF signal links when working in the carrier aggregation mode can be reduced, thereby improving the performance of the RF front-end module.

[0061] Exemplarily, the operating frequency band of the first RF signal link is higher than the operating frequency band of the fourth RF signal link, and the first end of the first filter chip 20 is farther away from the other filter chips on the substrate 10 than the second end of the first filter chip 20, that is, the distance between the first filter 211 and the other filter chips on the substrate 10 is greater than the distance between the fourth filter 241 and the other filter chips on the substrate 10. The operating frequency band of the first RF signal link is relatively high, and higher frequency RF signals are more likely to cause crosstalk with other RF signals; by increasing the distance between the first filter 211 having a higher operating frequency band and the other filter chips on the substrate 10, the crosstalk between the RF signal of the first filter 211 and the RF signal of other filter chips can be more significantly reduced, for example, the crosstalk between the RF signal of the first filter 211 and the RF signal of the second filter 61 can be reduced, thereby improving the performance of the RF front-end module.

[0062] In some embodiments, the matching circuit of at least one RF signal link is disposed between the first filter 211 and the second filter 61. Figure 4 As shown, the third matching circuit 93 of the third RF signal chain and the fourth matching circuit 94 corresponding to the fourth RF signal chain are arranged between the first filter 211 and the second filter 61 .

[0063] Preferably, the frequency band corresponding to the RF signal link (such as the third RF signal link) where the matching circuit between the first filter 211 and the second filter 61 is located is not carrier aggregated with the frequency band corresponding to the first RF signal link and the frequency band corresponding to the second RF signal link.

[0064] By setting matching circuits of other RF signal links between multiple filters supporting the carrier aggregation working mode, the matching circuit can isolate the first filter 211 from the second filter 61, and increase the distance between the first filter 211 and the second filter 61, which can reduce the crosstalk between different RF signal links when working in the carrier aggregation mode, thereby improving the performance of the RF front-end module. And setting matching circuits of other RF signal links between the first filter 211 and the second filter 61 can make the layout of the substrate 10 more compact, which is conducive to reducing the volume of the RF front-end module.

[0065] In some embodiments, at least one matching circuit is disposed between the first matching circuit 91 and the second matching circuit 92 , and the at least one matching circuit is a matching circuit for a radio frequency signal chain other than the first radio frequency signal chain and the second radio frequency signal chain.

[0066] like Figure 4 As shown, the third matching circuit 93 of the third RF signal chain is arranged between the first matching circuit 91 and the second matching circuit 92. Exemplarily, the first matching circuit 91 includes a first input matching circuit, the second matching circuit 92 includes a second input matching circuit, and the third matching circuit 93 includes a third input matching circuit; each input matching circuit is connected to the input end of the corresponding filter; and the third input matching circuit is arranged between the first input matching circuit and the second input matching circuit.

[0067] Preferably, the frequency band corresponding to the RF signal link (such as the third RF signal link) where the matching circuit arranged between the first matching circuit 91 and the second matching circuit 92 is located, and the frequency band corresponding to the first RF signal link and the frequency band corresponding to the second RF signal link are not carrier aggregated.

[0068] By setting matching circuits of other RF signal links between the matching circuits in multiple RF signal links supporting the carrier aggregation working mode, the matching circuits corresponding to the first filter 211 and the second filter 61 can be isolated, and the distance between the matching circuits corresponding to the first filter 211 and the second filter 61 is increased. The crosstalk between different RF signal links when working in the carrier aggregation mode can be reduced, thereby improving the performance of the RF front-end module.

[0069] Exemplarily, a projection of at least one matching circuit arranged between the first matching circuit 91 and the second matching circuit 92 along the first direction is at least partially located between the projections of the first matching circuit 91 and the second matching circuit 92 along the first direction; and / or a projection of at least one matching circuit along the second direction is at least partially located between the projections of the first matching circuit 91 and the second matching circuit 92 along the second direction, and the second direction intersects with the first direction; the first direction is parallel to a side edge of the substrate 10.

[0070] For example, see Figure 3 or Figure 4 , the first direction is horizontal, and the first side of the substrate 10 is the upper side or the lower side of the substrate 10; the second direction is vertical, and the second side of the substrate 10 is the left side or the right side of the substrate 10; the projection of the third matching circuit 93 on the left side of the substrate 10 along the first direction is at least partially located between the projection of the first matching circuit 91 on the left side of the substrate 10 along the first direction and the projection of the second matching circuit 92 on the left side of the substrate 10 along the first direction.

[0071] For example, the projections of the first matching circuit 91 and the second matching circuit 92 on the left side of the substrate 10 along the first direction do not overlap, the projections of the first matching circuit 91 and the second matching circuit 92 on the right side of the substrate 10 along the first direction do not overlap, the projections of the first matching circuit 91 and the second matching circuit 92 on the upper side of the substrate 10 along the second direction do not overlap, and the projections of the first matching circuit 91 and the second matching circuit 92 on the lower side of the substrate 10 along the second direction do not overlap; that is, the positions of the first matching circuit 91 and the second matching circuit 92 in the first direction and the second direction are staggered. Among them, the projection of the third matching circuit 93 on the left side of the substrate 10 along the first direction is at least partially located between the projection of the first matching circuit 91 on the left side of the substrate 10 along the first direction and the projection of the second matching circuit 92 on the left side of the substrate 10 along the first direction.

[0072] There is a gap between the projections of the first matching circuit 91 and the second matching circuit 92 in at least one direction, and at least one matching circuit is arranged at a position corresponding to the gap on the substrate 10. This can enhance the isolation effect between the matching circuit corresponding to the first filter 211 and the matching circuit corresponding to the second filter 61, so as to further reduce the crosstalk between different RF signal links when working in the carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0073] In some embodiments, please combine Figure 2 See also Figure 4The RF front-end module also includes an antenna port 14 and a switch chip 80, and the switch chip 80 is arranged between the first matching circuit 91 and the second matching circuit 92. The switch chip 80 is arranged between the matching circuits in the multiple RF signal links supporting the carrier aggregation working mode, so that the distance between the matching circuits in the multiple RF signal links supporting the carrier aggregation working mode can be increased, and the matching circuits in the multiple RF signal links can also be isolated by the switch chip 80, so that the crosstalk between different RF signal links when working in the carrier aggregation mode can be reduced, thereby improving the performance of the RF front-end module.

[0074] Exemplarily, the projection of the first matching circuit 91 on the first straight line, the projection of the switch chip 80 on the first straight line, and the projection of the second matching circuit 92 on the first straight line are spaced apart, and the projection of the first matching circuit 91 on the first straight line and the projection of the second matching circuit 92 on the first straight line are respectively located on both sides of the projection of the switch chip 80 on the first straight line; wherein the first straight line is parallel to the side of the switch chip 80.

[0075] For example, see Figure 4 , taking the case where the first straight line is parallel to the left side or right side of the switch chip 80, the projection of the switch chip 80 on the first straight line is located between the projection of the first matching circuit 91 on the first straight line and the projection of the second matching circuit 92 on the first straight line. The distance between the matching circuit corresponding to the first filter 211 and the matching circuit corresponding to the second filter 61 can be increased, and the matching circuit corresponding to the first filter 211 and the matching circuit corresponding to the second filter 61 can be isolated by the switch chip 80, which can reduce the crosstalk between the RF signals of different frequency bands of the carrier aggregation when they are transmitted simultaneously in different RF signal links, thereby improving the performance of the RF front-end module.

[0076] For example, see Figure 4 , the switch chip 80 is rectangular, and the switch chip 80 includes a first side (such as the upper side) and a second side (such as the lower side) opposite to each other, and a third side (such as the left side or the right side) adjacent to the first side and the second side, and the length of the third side is greater than the length of the first side and the length of the second side; the first straight line is parallel to the third side. Compared with the case where the first straight line is parallel to the shorter first side and the second side, the first straight line is parallel to the longer side of the switch chip 80 and the projection of the first matching circuit 91 on the first straight line and the projection of the second matching circuit 92 on the first straight line are respectively located on both sides of the projection of the switch chip 80 on the first straight line, the distance between the first matching circuit 91 and the second matching circuit 92 is larger, which can further reduce the crosstalk of RF signals of different frequency bands between the matching circuit corresponding to the first filter 211 and the matching circuit corresponding to the second filter 61, thereby improving the performance of the RF front-end module.

[0077] In some embodiments, Figure 5 As shown, the RF front-end module includes at least two first RF signal links, wherein the first RF signal link can transmit RF signals simultaneously with the second RF signal link, and the first RF signal link, the second RF signal link and the third RF signal link transmit RF signals at different times. The filters of different first RF signal links can be integrated into the same filter chip or into different filter chips, such as Figure 4 As shown, the filters of the two first RF signal chains are integrated into the first filter chip 20 .

[0078] The at least two first RF signal links include a first RF signal link in a first working frequency band and a first RF signal link in a second working frequency band. For ease of distinction, the first filter 211 in the first RF signal link in the first working frequency band is represented as filter 21a, and the first matching circuit 91 in the first RF signal link in the first working frequency band is represented as matching circuit 91a; the first filter 211 in the first RF signal link in the second working frequency band is represented as filter 21b, and the first matching circuit 91 in the first RF signal link in the second working frequency band is represented as matching circuit 91b.

[0079] For example, see Figure 5 , the projection of the switch chip 80 on the first straight line is at least partially located between the projection of the first matching circuit 91 (such as matching circuit 91a) corresponding to the first working frequency band and the projection of the second matching circuit 92 on the first straight line, for example, the first matching circuit 91 corresponding to the first working frequency band is arranged close to the upper side of the switch chip 80, and the second matching circuit 92 is arranged close to the lower side of the switch chip 80; the projection of the first matching circuit 91 (such as matching circuit 91b) corresponding to the second working frequency band on the first straight line at least partially overlaps with the projection of the switch chip 80 on the first straight line, for example, the first matching circuit 91 (such as matching circuit 91b) corresponding to the second working frequency band is arranged close to the right side of the switch chip 80; wherein the first straight line is parallel to the side of the switch chip 80. It can be understood that the distance between the first matching circuit 91 (such as matching circuit 91a) corresponding to the first working frequency band and the second matching circuit 92 is greater than the distance between the first matching circuit 91 (such as matching circuit 91b) and the second matching circuit 92 corresponding to the second working frequency band. The crosstalk between the RF signal of the first matching circuit 91 (such as the matching circuit 91a) corresponding to the first working frequency band and the RF signal of the second matching circuit 92 can be more significantly reduced, thereby improving the performance of the RF front-end module.

[0080] The first working frequency band is higher than the second working frequency band, and / or the bandwidth of the first working frequency band is greater than the bandwidth of the second working frequency band, and / or the first RF signal link of the first working frequency band can also transmit RF signals simultaneously with at least one RF signal link other than the second RF signal link. For example, the first working frequency band is higher than the second working frequency band, and the first RF signal link of the first working frequency band can also transmit RF signals simultaneously with the fourth RF signal link.

[0081] The first operating frequency band is higher than the second operating frequency band, and higher frequency RF signals are more likely to cause crosstalk with other RF signals. By setting the distance between the first matching circuit 91 (such as matching circuit 91a) of the higher operating frequency band and the second matching circuit 92 to be farther, the crosstalk between the RF signal of the first matching circuit 91 (such as matching circuit 91a) of the higher operating frequency band and the RF signal of the second matching circuit 92 can be more significantly reduced, thereby improving the performance of the RF front-end module.

[0082] For example, the bandwidth of the first working frequency band is 150 MHz to 500 MHz, and the bandwidth of the second working frequency band is 60 MHz to 120 MHz. The RF signal of the working frequency band with a wider bandwidth is more likely to cause crosstalk with other RF signals. By setting the distance between the first matching circuit 91 (such as matching circuit 91a) and the second matching circuit 92 of the working frequency band with a wider bandwidth to be farther, the crosstalk between the RF signal of the first matching circuit 91 (such as matching circuit 91a) and the RF signal of the matching circuit supporting the carrier aggregation working mode can be more significantly reduced, thereby improving the performance of the RF front-end module.

[0083] For example, the first RF signal link of the first working frequency band can also transmit RF signals simultaneously with the fourth RF signal link. Since the first RF signal link corresponding to the first working frequency band can work simultaneously with RF signal links of more frequency bands, the first RF signal link corresponding to the first working frequency band is more likely to generate crosstalk with other RF signals. By setting the distance between the first matching circuit 91 (such as matching circuit 91a) and the second matching circuit 92 in the first RF signal link corresponding to the first working frequency band to be farther, the crosstalk between the RF signal of the first matching circuit 91 (such as matching circuit 91a) and the RF signals of the remaining matching circuits can be more significantly reduced, thereby improving the performance of the RF front-end module.

[0084] For example, the switch chip 80 is rectangular, and the switch chip 80 includes a first side and a second side opposite to each other, and a third side adjacent to the first side and the second side, and the length of the third side is greater than the length of the first side and the length of the second side; the first straight line is parallel to the third side. Compared with the case where the first straight line is parallel to the shorter first side and the second side, the first straight line is parallel to the longer side of the switch chip 80, and the projection of the switch chip 80 on the first straight line is at least partially located between the projection of the first matching circuit 91 (such as the matching circuit 91a) corresponding to the first working frequency band and the projection of the second matching circuit 92 on the first straight line, the distance between the first matching circuit 91 (such as the matching circuit 91a) and the second matching circuit 92 corresponding to the first working frequency band is larger, which can further reduce the crosstalk of the RF signal between the first matching circuit 91 (such as the matching circuit 91a) and the second matching circuit 92 corresponding to the first working frequency band, thereby improving the performance of the RF front-end module.

[0085] In some embodiments, Figure 4 As shown, the RF front-end module also includes a fourth RF signal link, and the fourth RF signal link includes a fourth filter 241 and a fourth matching circuit 94; the fourth filter 241 and the first filter 211 of the first RF signal link are arranged on the first filter chip 20. The fourth RF signal link can transmit RF signals simultaneously with the first RF signal link. That is, the frequency band corresponding to the fourth RF signal link is carrier aggregated with the frequency band corresponding to the first RF signal link.

[0086] Optionally, the first matching circuit 91 and the fourth matching circuit 94 are arranged near different sides of the first filter chip 20, for example, the first matching circuit 91 (such as the matching circuit 91a) is arranged near the upper side and the left side of the first filter chip 20, and the fourth matching circuit 94 is arranged near the lower side of the first filter chip 20. The distance between the first matching circuit 91 and the fourth matching circuit 94 can be increased to reduce the crosstalk of the RF signal between the first matching circuit 91 and the fourth matching circuit 94, and since the first filter chip 20 isolates the first matching circuit 91 from the fourth matching circuit 94, the crosstalk of the RF signal between the first matching circuit 91 and the fourth matching circuit 94 can also be reduced, thereby better improving the performance of the RF front-end module.

[0087] Exemplarily, the projection of the first filter chip 20 along the first direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 along the first direction; and / or the projection of the first filter chip 20 along the second direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 along the second direction, and the second direction intersects with the first direction; the first direction is parallel to a side edge of the substrate 10.

[0088] For example, see Figure 4 , the first direction is horizontal, the first side of the substrate 10 is the upper side or the lower side of the substrate 10; the second direction is vertical, the second side of the substrate 10 is the left side or the right side of the substrate 10. The projection of the first filter chip 20 on the left side of the substrate 10 along the first direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 on the left side of the substrate 10 along the first direction; for example, the projection of the first filter chip 20 on the left side of the substrate 10 along the first direction is located between the projections of the first matching circuit 91 (such as the matching circuit 91a) and the fourth matching circuit 94 on the left side of the substrate 10 corresponding to the first working frequency band along the first direction; the projection of the first filter chip 20 on the left side of the substrate 10 along the first direction is partially located between the projections of the first matching circuit 91 (such as the matching circuit 91b) and the fourth matching circuit 94 on the left side of the substrate 10 along the first direction corresponding to the second working frequency band. It can be understood that the distance between the first matching circuit 91 (such as matching circuit 91a) and the fourth matching circuit 94 corresponding to the first working frequency band is greater than the distance between the first matching circuit 91 (such as matching circuit 91b) and the fourth matching circuit 94 corresponding to the second working frequency band, which can further reduce the crosstalk of the RF signal between the first matching circuit 91 (such as matching circuit 91a) and the fourth matching circuit 94 supporting the carrier aggregation working mode, thereby improving the performance of the RF front-end module.

[0089] The RF front-end module of the embodiment of the present application includes: a substrate and a first RF signal link, a second RF signal link and a third RF signal link arranged on the substrate; the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can simultaneously transmit RF signals, and the third RF signal link and the first RF signal link and the second RF signal link transmit RF signals at different times; wherein the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the matching circuit. It is possible to improve the isolation between multiple RF signal links supporting the carrier aggregation working mode, so that the RF front-end module has higher performance.

[0090] In some embodiments, Figure 6As shown, the RF front-end module includes: a substrate 10, a first filter chip 20, an input matching circuit 30 and an output matching circuit 40. The first filter chip 20, the input matching circuit 30 and the output matching circuit 40 are arranged on the substrate 10.

[0091] Among them, one or more filters are arranged inside the first filter chip 20, for example, the filter chip can be a single filter, or multiple filters can share the same wafer, specifically, the filter includes multiple resonators, each resonator can be a surface acoustic wave (Surface Acoust ic Wave, SAW) resonator or a bulk acoustic wave (Bulk Acoust icWave, BAW) resonator. Exemplarily, the resonator in the filter can be a Normal SAW resonator, a TC-SAW (Temperature compensated SAW, temperature compensated surface acoustic wave) resonator, a resonator with a multi-layer structure arranged under the piezoelectric layer, an X-BAR (laterally excited film bulk acoustic wave) resonator, a DMS (Double-mode SAW, dual-mode surface acoustic wave) resonator, a longitudinally coupled surface acoustic wave resonator, etc.

[0092] The input matching circuit 30 is connected to the input end of the first filter chip 20, and the output matching circuit 40 is connected to the output end of the first filter chip 20. Specifically, the input end of at least one filter in the first filter chip 20 is connected to the corresponding input matching circuit 30, and the output end of at least one filter in the first filter chip 20 is connected to the corresponding output matching circuit 40.

[0093] The input matching circuit 30 can match the output impedance of the signal source with the input impedance of the first filter chip 20, reduce signal reflection and transmission loss, and thus improve signal transmission efficiency; for example, the input matching circuit 30 includes an input matching inductor, a first end of the input matching inductor is connected to the input end of the first filter chip 20, and a second end of the input matching inductor is grounded.

[0094] The output matching circuit 40 can match the output impedance of the first filter chip 20 with the input impedance of the subsequent circuit or load, further reducing signal reflection and transmission loss, thereby improving signal transmission efficiency. For example, the output matching circuit 40 includes an output matching inductor, a first end of the output matching inductor is connected to the output end of the first filter chip 20, and a second end of the output matching inductor is used to connect to the subsequent circuit or load.

[0095] In some embodiments, see Figure 7 and Figure 8The RF front-end module also includes an antenna port 14 and a switch chip 80. The switch chip 80 includes multiple switch paths, and the switch paths are connected between the antenna port 14 and the corresponding filters. The switch chip 80 is used to turn on the corresponding switch path according to the frequency band of the RF signal received by the antenna port 14 to transmit the received RF signal to the corresponding filter.

[0096] As an implementation mode, the input matching circuit 30 is connected in parallel between the switch chip 80 and the corresponding filter, that is, one end of the input matching circuit 30 is connected to the connection path between the switch chip 80 and the corresponding filter, and the other end is used for grounding. For example, the input matching circuit 30 includes an inductor (which can be called an input matching inductor), and the first end of the inductor in the input matching circuit 30 is connected to the input end of the filter, and the second end of the inductor is grounded to perform impedance matching on the RF signal between the switch chip 80 and the filter, so as to reduce the loss during the transmission of the RF signal.

[0097] The filter is used to filter the radio frequency signal to improve the signal quality of the radio frequency signal. The output matching circuit 40 is used to perform impedance matching on the radio frequency signal output by the filter to reduce the loss during the transmission of the radio frequency signal.

[0098] Among them, Figure 6 and Figure 7 As shown, a grounding metal film 50 for grounding is provided on the substrate 10. For example, the substrate 10 includes a grounding layer, and the grounding metal film 50 is connected to the grounding layer through a metal through hole; of course, it is not limited thereto, for example, multiple metal layers of the substrate 10 each include a grounding metal film 50, and the grounding metal films 50 of each metal layer can be connected through a metal through hole, so that the grounding port of the RF device can be grounded.

[0099] The grounding metal film 50 at least includes a first metal film 51, and the first metal film 51 is at least partially located between the first area 11 and the second area 12 of the substrate 10; the first area 11 is the area corresponding to the input end of the first filter chip 20 and / or the input matching circuit 30, and the second area 12 is the area corresponding to the output end of the first filter chip 20 and / or the output matching circuit 40. For example, the first metal film 51 can be arranged between the input end and the output end of the first filter chip 20, or between the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, or extend from between the input end and the output end of the first filter chip 20 to between the input matching circuit 30 and the output matching circuit 40.

[0100] For the convenience of description, the first area 11 can be referred to as a signal input area corresponding to the first filter chip 20 , and the second area 12 can be referred to as a signal output area corresponding to the first filter chip 20 .

[0101] By setting a first metal film 51 between the signal input area corresponding to the first filter chip 20 and the signal output area corresponding to the first filter chip 20, the signal input area and the signal output area of ​​the first filter chip 20 are isolated, which can prevent the radio frequency signal in the signal input area from coupling to the signal output area and causing coupling interference to the radio frequency signal output by the first filter chip 20. It can also prevent the radio frequency signal in the signal output area from coupling to the signal input area and causing coupling interference to the radio frequency signal input to the first filter chip 20. The signal quality of the radio frequency signal input to the first filter chip 20 and the radio frequency signal output by the first filter chip 20 can be improved, thereby improving the performance of the radio frequency front-end module.

[0102] In some embodiments, the first metal film 51 is at least partially located between the input matching circuit 30 of the first filter chip 20 and the output matching circuit 40 of the first filter chip 20. For the input matching circuit 30 and the output matching circuit 40 of the same filter, the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20 can be improved by isolating them through the grounded first metal film 51, thereby improving the performance of the RF front-end module.

[0103] For example, Figure 7 As shown, the input end of the first filter chip 20 includes the first input end 23 corresponding to the fourth filter 241, and the first input end 23 is configured to input the radio frequency signal of the first frequency band; the output end of the first filter chip 20 includes the first output end 21 corresponding to the fourth filter 241, and the first output end 21 is configured to output the radio frequency signal of the first frequency band; wherein, the output matching circuit 40 of the fourth filter 241 in the first filter chip 20 includes the first inductor 41, and the input matching circuit 30 of the fourth filter 241 includes the second inductor 31; the first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31. Optionally, the first metal film 51 can be set in the metal layer where the first inductor 41 is located, or can be set in the metal layer where the second inductor 31 is located, or can be set in the metal layer where the first inductor 41 and the second inductor 31 are located; the isolation effect of the first metal film 51 can be enhanced, and the number of layers of the occupied metal layer can be saved. Optionally, the first metal film 51 may also be arranged in a metal layer other than the metal layer where the first inductor 41 is located or the metal layer where the second inductor 31 is located. For example, it is convenient to set a metal wiring in the metal layer where the first inductor 41 is located to connect to the output end of the filter, and it is convenient to set a metal wiring in the metal layer where the second inductor 31 is located to connect to the input end of the filter.

[0104] For example, Figure 7As shown, the output end of the first filter chip 20 includes a first output end 21 and a second output end 22. The first output end 21 is configured to output a radio frequency signal of a first frequency band, and the second output end 22 is configured to output a radio frequency signal of a second frequency band. The second frequency band is a different operating frequency band from the first frequency band.

[0105] The substrate 10 is provided with a first signal output port 13 , and the first output port 21 and the second output port 22 are connected to the first signal output port 13 through an output matching circuit 40 , that is, the first output port 21 and the second output port 22 of the first filter chip 20 are connected to the same signal output port.

[0106] For example, the frequency of the first frequency band is lower than the frequency of the second frequency band, and the output matching circuit 40 corresponding to the first filter chip 20 includes a first inductor 41, the first inductor 41 is connected in series between the first output terminal 21 and the first signal output port 13, and the second output terminal 22 is connected to the first signal output port 13. The first output terminal 21 and the second output terminal 22 are connected to the same signal output port. Since the frequency of the first frequency band in which the first output terminal 21 works is lower than the frequency of the second frequency band in which the second output terminal 22 works, the inductance required for impedance matching of the first output terminal 21 is larger than the inductance required for impedance matching of the second output terminal 22. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the output matching circuit 40 can meet both the output matching requirements of the first frequency band and the output matching requirements of the second frequency band.

[0107] Exemplarily, the first metal film 51 is at least partially disposed between the first inductor 41 and the input matching circuit 30. By disposing the first metal film 51 between the first inductor 41 and the input matching circuit 30, the RF signal input to the first filter chip 20 and the RF signal output from the first output terminal 21 of the first filter chip 20 can be isolated to prevent coupling interference, thereby improving the signal quality of the RF signal input to the first filter chip 20 and the RF signal output from the first filter chip 20, thereby improving the performance of the RF front-end module.

[0108] For example, Figure 7As shown, the output matching circuit 40 corresponding to the first filter chip 20 also includes a first connection line 42, a second connection line 43 and a third connection line 44; the first end of the first inductor 41 is connected to the first output end 21 of the first filter chip 20 through the first connection line 42, and the second end of the first inductor 41 is connected to the first signal output port 13 through the second connection line 43; the second output end 22 of the first filter chip 20 is connected to the first signal output port 13 through the third connection line 44; the first connection line 42, the second connection line 43 and the third connection line 44 include metal traces and / or bonding wires on the substrate 10. The first connection line 42, the second connection line 43 and the third connection line 44 have inductance characteristics for radio frequency signals, and can be used as inductors to perform impedance matching on the radio frequency signal output by the first filter chip 20.

[0109] For example, Figure 7 As shown, the first connection line 42, the second connection line 43 and the third connection line 44 are straight connection lines or folded line connection lines, and the folded line connection lines are open and non-closed connection lines; compared with the impedance matching method of winding a metal coil as an inductor (such as the first inductor 41) on the substrate 10, the impedance matching by the first connection line 42, the second connection line 43 and the third connection line 44 occupies a smaller area on the substrate 10, which is conducive to the miniaturization design of the RF front-end module. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the first connection line 42 and the second connection line 43 can be supplemented to meet the output impedance matching requirements of the first frequency band.

[0110] Exemplarily, the first metal film 51 is at least partially disposed between the input matching circuit 30 (including the second inductor 31 and / or the third inductor 32) and at least one of the first connecting wire 42, the second connecting wire 43, and the third connecting wire 44. By disposing the first metal film 51 between the connecting wires in the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20 can be isolated to prevent coupling interference, so as to improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be disposed in the metal layer where at least one of the first connecting wire 42, the second connecting wire 43, and the third connecting wire 44 is located, or can be disposed in the metal layer where the input matching circuit 30 and the at least one connecting wire are located; the isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved. Optionally, the first metal film 51 may also be disposed on a metal layer other than the metal layer where the input matching circuit 30 is located or the metal layer where the first connecting line 42 , the second connecting line 43 , and the third connecting line 44 are located.

[0111] In some embodiments, please combine Figure 7 See also Figure 8 The input end of the first filter chip 20 includes a first input end 23 and a second input end 24, and the first input end 23 and the second input end 24 are configured to input radio frequency signals of different frequency bands; for example, the first input end 23 is configured to input radio frequency signals of a first frequency band, and the second input end 24 is configured to input radio frequency signals of a second frequency band.

[0112] The input matching circuit 30 of the first filter chip 20 includes a second inductor 31 and a third inductor 32. The second inductor 31 is connected to the first input terminal 23, and is used to perform impedance matching on the RF signal input to the first input terminal 23; for example, the fourth matching circuit 94 in the fourth RF signal chain includes the second inductor 31. The third inductor 32 is connected to the second input terminal 24, and is used to perform impedance matching on the RF signal input to the second input terminal 24; for example, the third matching circuit 93 in the third RF signal chain includes the third inductor 32. For example, Figure 8 As shown, the second inductor 31 and the third inductor 32 are respectively connected in parallel at the corresponding input terminals. For example, the first input terminal 23 is grounded through the second inductor 31 , and the second input terminal 24 is grounded through the third inductor 32 .

[0113] The first metal film 51 is at least partially located between the output matching circuit 40 and the second inductor 31, and / or the first metal film 51 is at least partially located between the output matching circuit 40 and the third inductor 32. For example, the first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31, and / or at least partially located between the first inductor 41 and the third inductor 32, and / or at least partially located between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and / or at least partially located between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44.

[0114] Optionally, the first metal film 51 can be disposed on the metal layer where the output matching circuit 40 is located, or can be disposed on the metal layer where the second inductor 31 is located, or can be disposed on the metal layer where the third inductor 32 is located, or can be disposed on the metal layer where the output matching circuit 40 and the second inductor 31 and / or the third inductor 32 are located; the isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved. For example, the first metal film 51 can be disposed on the metal layer of the top layer of the substrate 10 or on the metal layer inside the substrate 10.

[0115] It should be noted that the first metal films 51 arranged at different positions can be arranged at intervals or connected. For example, adjacent first metal films 51 can be arranged in an integrated manner. For example, the first metal film 51 between the output matching circuit 40 and the third inductor 32, the first metal film 51 between the first inductor 41 and the second inductor 31, the first metal film 51 between the first inductor 41 and the third inductor 32, the first metal film 51 between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and the first metal film 51 between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44 can be connected to each other. When the first metal films 51 at different positions are connected, the isolation effect can be improved.

[0116] In some embodiments, Figure 7 As shown, the input end of the first filter chip 20 also includes a third input end 25, and the input matching circuit 30 also includes a fourth inductor 33, and the fourth inductor 33 is connected to the third input end 25. For example, the first matching circuit 91 in the aforementioned first RF signal chain includes the fourth inductor 33. For example, Figure 8 As shown, the third input terminal 25 is grounded via a fourth inductor 33 .

[0117] Exemplarily, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and / or the third inductor 32 and the output matching circuit 40; for example, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the third inductor 32 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40 and greater than the distance between the third inductor 32 and the output matching circuit 40. By increasing the distance between the fourth inductor 33 and the output matching circuit 40, the RF signal at the fourth inductor 33 can be prevented from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip 20. The RF signal in the signal output area can also be prevented from coupling to the fourth inductor 33 and input into the first filter chip 20 through the third input terminal 25. Therefore, the signal quality of the RF signal input into the first filter chip 20 and the RF signal output from the first filter chip 20 can be improved, thereby improving the performance of the RF front-end module.

[0118] In some embodiments, the third input terminal 25 is configured to output a radio frequency signal in a third frequency band, the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20, and is more susceptible to interference; by increasing the distance between the fourth inductor 33 and the output matching circuit 40, it is possible to more thoroughly prevent the radio frequency signal at the fourth inductor 33 from coupling to the signal output area and causing coupling interference to the radio frequency signal output by the first filter chip 20, and it is also possible to more thoroughly prevent the radio frequency signal in the signal output area from coupling to the fourth inductor 33 and being input into the first filter chip 20 through the third input terminal 25.

[0119] Optional, such as Figure 7 As shown, the first metal film 51 is at least partially located between the output matching circuit 40 and the fourth inductor 33. For example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, and / or at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44; for example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, or the first metal film 51 is at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, or the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33 and at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44. To improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be set in the metal layer where the output matching circuit 40 is located, or can be set in the metal layer where the fourth inductor 33 is located, or can be set in the metal layer where the output matching circuit 40 and the fourth inductor 33 are located; the isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved.

[0120] Optional, such as Fig. 9 As shown, the first metal film 51 is not disposed in the area Z around the fourth inductor 33 , and the size of the area Z around the fourth inductor 33 is less than or equal to twice the size of the fourth inductor 33 .

[0121] Optionally, the first metal film 51 is not disposed between the fourth inductor 33 and at least one other inductor in the input matching circuit 30. Fig. 9 As shown, the first metal film 51 is not disposed between the fourth inductor 33 and the third inductor 32 , so that other devices or metal wirings can be disposed between the fourth inductor 33 and the third inductor 32 .

[0122] In some embodiments, the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20; and / or the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals; for example, the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20; or the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals; or the third input terminal 25 is configured to output a radio frequency signal of a third frequency band, and the frequency of the third frequency band is greater than the frequency of the frequency band corresponding to each of the remaining input terminals of the first filter chip 20, and the number of frequency bands carrier aggregated (CA) with the third frequency band is greater than the number of frequency bands carrier aggregated with the frequency bands corresponding to each of the remaining input terminals. The distance between the fourth inductor 33 and the first filter chip 20 is greater than the distance between the inductor corresponding to each other input end in the input matching circuit 30 (such as the second inductor 31 and the third inductor 32) and the first filter chip 20. Optionally, the distance between the inductor and the chip may be the distance between the two points closest to the inductor and the chip, or may be the distance between the center of the inductor and the center of the chip.

[0123] Carrier aggregation combines multiple frequency bands together so that the RF front-end module can transmit data in multiple frequency bands at the same time, thereby achieving higher data throughput. However, since signals in different frequency bands are received or transmitted at the same time during carrier aggregation, crosstalk is easily generated between them. In this embodiment, the fourth inductor 33 corresponding to the third frequency band aggregated with more frequency bands is set at a position away from the first filter chip 20, which can reduce the crosstalk between the RF signal at the fourth inductor 33 and other RF signals corresponding to the first filter chip 20.

[0124] For example, Figure 7 and Figure 8 As shown, the first filtering chip 20 includes at least a fourth filter 241 corresponding to the first input terminal 23, a third filter 231 corresponding to the second input terminal 24, and a first filter 211 corresponding to the third input terminal 25; the third frequency band corresponding to the third input terminal 25 is at least carrier aggregated with the first frequency band corresponding to the first input terminal 23.

[0125] It should be noted that the frequency of the third frequency band corresponding to the third input terminal 25 is relatively large, and / or the number of frequency bands requiring carrier aggregation is larger, making it easier for the RF signal of the third frequency band to generate crosstalk with other RF signals. By increasing the distance between the fourth inductor 33 and the first filter chip 20, the crosstalk between the RF signal at the fourth inductor 33 and other RF signals corresponding to the first filter chip 20 can be reduced, thereby improving the performance of the RF front-end module.

[0126] The third frequency band corresponding to the third input terminal 25 is at least aggregated with the first frequency band carrier corresponding to the first input terminal 23, and the second frequency band corresponding to the second input terminal 24 is not aggregated with the first frequency band carrier corresponding to the first input terminal 23 and is not aggregated with the third frequency band carrier corresponding to the third input terminal 25. Optionally, at least the third filter 231 corresponding to the second input terminal 24 is arranged between the fourth filter 241 corresponding to the first input terminal 23 and the first filter 211 corresponding to the third input terminal 25. By arranging a filter that does not participate in the carrier aggregation between multiple filters in the carrier aggregation, the multiple filters in the carrier aggregation can be isolated, and the distance between the multiple filters in the carrier aggregation can be made farther, which can reduce the crosstalk of the RF signals between different filters in the carrier aggregation, thereby improving the performance of the RF front-end module.

[0127] The third frequency band corresponding to the third input terminal 25 is at least aggregated with the first frequency band carrier corresponding to the first input terminal 23, and the second frequency band corresponding to the second input terminal 24 is not aggregated with the first frequency band carrier corresponding to the first input terminal 23 and is not aggregated with the third frequency band carrier corresponding to the third input terminal 25. Optionally, the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the second inductor 31 corresponding to the first input terminal 23 is greater than the distance between the second inductor 31 corresponding to the first input terminal 23 and the third inductor 32 corresponding to the second input terminal 24, and is greater than the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the third inductor 32 corresponding to the second input terminal 24. For example, at least the third filter 231 is arranged between the fourth filter 241 and the first filter 211, and the distance between the fourth inductor 33 and the second inductor 31 is greater than the distance between the second inductor 31 and the third inductor 32, and is greater than the distance between the fourth inductor 33 and the third inductor 32.

[0128] By increasing the distance between the input matching inductors corresponding to the multiple filters of the carrier aggregation (such as the fourth inductor 33 and the second inductor 31), the crosstalk of the RF signals between the input matching inductors corresponding to the different filters of the carrier aggregation can be reduced, thereby improving the performance of the RF front-end module.

[0129] In some embodiments, Figure 7As shown, the grounded metal film 50 also includes a second metal film 52, and the second metal film 52 is at least partially disposed between the second inductor 31 and the third inductor 32. For the input matching inductors corresponding to filters of different frequency bands, the input matching inductors corresponding to the different frequency bands can be isolated by the second metal film 52 to prevent crosstalk between the input matching inductors of different frequency bands, thereby improving the performance of the RF front-end module. Optionally, the second metal film 52 can be disposed in the metal layer where the second inductor 31 is located, or can be disposed in the metal layer where the third inductor 32 is located, or can be disposed in the metal layer where the second inductor 31 and the third inductor 32 are located; the isolation effect of the first metal film 51 can be enhanced, and the number of layers of the occupied metal layer can be saved. Optionally, the second metal film 52 can also be disposed in a metal layer other than the metal layer where the second inductor 31 is located or the metal layer where the third inductor 32 is located, for example, it can be convenient to set a metal trace in the metal layer where the second inductor 31 is located or the metal layer where the third inductor 32 is located to connect with the input end of the filter.

[0130] In some embodiments, the inductor in the input matching circuit 30 (such as the second inductor 31, the third inductor 32, and the fourth inductor 33) and / or the inductor in the output matching circuit 40 (such as the first inductor 41) includes a metal trace inductor, and the metal trace inductor is formed on one or more metal layers of the substrate 10. Exemplarily, the number of turns of the metal trace inductor is greater than or equal to 1.

[0131] Exemplarily, the first metal film 51 is formed in at least one metal layer where the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 are located, and the first metal film 51 is spaced apart from the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40; for example, the first metal film 51 can be set in the metal layer where the output matching circuit 40 is located, or can be set in the metal layer where the second inductor 31 is located, or can be set in the metal layer where the third inductor 32 is located, or can be set in the metal layer where the output matching circuit 40 and the second inductor 31 and / or the third inductor 32 are located. The isolation effect of the first metal film 51 can be enhanced, and the number of metal layers occupied can be saved.

[0132] For example, the first metal film 51 and the second metal film 52 can be disposed on the metal layer of the top layer of the substrate 10 or on the metal layer inside the substrate 10. For example, the first surface of the top layer of the substrate 10 is provided with a first metal layer, and the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 is at least provided on the first metal layer; the first metal film 51 and the second metal film 52 can be formed on the first metal layer. In some embodiments, the other metal layers below the metal layer where the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 are located are not provided with the first metal film 51 and the second metal film 52 in the area corresponding to the inductor, so as to reduce the mutual interference between the inductor and other adjacent circuits and improve the anti-interference capability.

[0133] The metal layer corresponding to the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 forms the first metal film 51 for isolation, which can enhance the isolation effect of the first metal film 51 and save the number of metal layers.

[0134] In some embodiments, Figure 7 As shown, the first metal film 51 is at least partially located between the input end of the first filter chip 20 and the output end of the first filter chip 20 .

[0135] For the input and output ends of the same filter chip, isolation is performed through the grounded first metal film 51, which can improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20, thereby improving the performance of the RF front-end module.

[0136] For example, Figure 7 As shown, the input ends of the first filter chip 20 (such as the first input end 23, the second input end 24, and the third input end 25) are arranged in the first filter chip 20 along the first side edge (such as the left side edge) of the first filter chip 20, and the output ends of the first filter chip 20 (such as the first output end 21, the second output end 22 and the third output end corresponding to the third input end 25) are arranged in the first filter chip 20 along the second side edge (such as the right side edge) of the first filter chip 20, wherein the first side edge and the second side edge are two opposite side edges; the first metal film 51 is at least partially located between the projection of the first side edge of the first filter chip 20 on the substrate 10 and the projection of the second side edge of the first filter chip 20 on the substrate 10.

[0137] Exemplarily, a first metal layer is provided on the first surface of the substrate 10, and the input and output ends of the first filter chip 20 are connected to the first metal layer; the first metal film 51 is at least partially provided on the first metal layer, and is located between the area corresponding to the input end of the first filter chip 20 and the area corresponding to the output end of the first filter chip 20.

[0138] For example, the first filter chip 20 is a surface mount device (SMD), and no other ports may be set in the area between the input end and the output end of the surface of the first filter chip 20 facing the substrate 10; a first metal film 51 may be set at a position corresponding to the area on the first metal layer to isolate the input end and the output end of the first filter chip 20.

[0139] In some embodiments, the projection of the input matching circuit 30 along the first preset direction does not overlap with the projection of the output matching circuit 40 along the first preset direction at least in part; and / or the projection of the input matching circuit 30 along the second preset direction does not overlap with the projection of the output matching circuit 40 along the second preset direction; the first preset direction is parallel to the first side of the substrate 10, the second preset direction is parallel to the second side of the substrate 10, and the first side of the substrate 10 is adjacent to the second side. For example, the first preset direction and the second preset direction are perpendicular to each other.

[0140] For example, Figure 7 As shown, the projections of the first inductor 41 and the second inductor 31 of the fourth filter 241 in the first filter chip 20 along the first preset direction do not overlap, and the projections along the second preset direction do not overlap, that is, the positions of the first inductor 41 and the second inductor 31 on the substrate 10 are staggered. Compared with the arrangement of the input matching inductor and the output matching inductor of the same filter along a preset direction, the staggered arrangement of the input matching inductor and the output matching inductor of the same filter on the substrate 10 can reduce the coupling between the input matching inductor and the output matching inductor, reduce the signal crosstalk between the matching inductor and the output matching inductor, and thus improve the performance of the RF front-end module.

[0141] In some embodiments, the input matching circuit 30 is disposed close to the input end of the first filter chip 20, which can shorten the wiring length between the input matching circuit 30 and the first filter chip 20, thereby reducing the transmission loss of the RF signal, and reducing parasitic impedance and interference. Optionally, the grounded metal film 50 is at least partially located between the input matching circuit 30 and the first filter chip 20 to reduce signal crosstalk between the input matching circuit 30 and the first filter chip 20.

[0142] In some embodiments, Fig. 9As shown, the filter chip further includes a second filter chip 60 and a matching circuit 70 connected to the second filter chip 60, for example, the matching circuit 70 includes a second matching circuit 92 corresponding to the second RF signal link; the grounded metal film 50 further includes a third metal film 53. The third metal film 53 is at least partially located between the third area 15 and the first area 11 of the substrate 10, and / or the third metal film 53 is at least partially located between the third area 15 and the second area 12 of the substrate 10; the third area 15 is the area corresponding to the second filter chip 60 and / or the matching circuit 70 connected to the second filter chip 60.

[0143] By setting a grounded third metal film 53 between the signal input areas and signal input areas corresponding to different filter chips, and / or between the signal input area and the signal output area, the areas corresponding to different filter chips are isolated, which can prevent the RF signals of different filter chips and their matching circuits 70 from coupling with each other and causing coupling interference, and can improve the signal quality of the RF signals corresponding to each filter chip, thereby improving the performance of the RF front-end module.

[0144] like Fig.10 As shown, the RF front-end module includes: a substrate 10, a first filter chip 20 and a fifth matching circuit 201 connected to the first filter chip 20, a second filter chip 60 and a sixth matching circuit 601 connected to the second filter chip 60.

[0145] Among them, the first filter chip 20 and the fifth matching circuit 201 are arranged in the first substrate area 101 of the substrate 10, and the second filter chip 60 and the sixth matching circuit 601 are arranged in the second substrate area 102 of the substrate 10; wherein a grounding metal film 50 for grounding is arranged on the substrate 10; the grounding metal film 50 is at least partially located between the first substrate area 101 and the second substrate area 102.

[0146] In some embodiments, the fifth matching circuit 201 includes an input matching circuit (such as an input matching inductor) connected to the input end of the first filter chip 20 , and the first substrate region 101 includes at least the first region 11 of the substrate 10 .

[0147] Optionally, the fifth matching circuit 201 further includes an output matching circuit (such as an output matching inductor) connected to the output end of the first filter chip 20; the grounding metal film 50 is at least partially located between the output matching circuit of the first filter chip 20 and the input matching circuit of the first filter chip 20. The first substrate region 101 may further include the second region 12 of the substrate 10.

[0148] The second substrate region 102 of the substrate 10 may also be referred to as the third region 15 of the substrate 10 .

[0149] The sixth matching circuit 601 connected to the second filter chip 60 at least includes an input matching circuit (such as an input matching inductor) connected to the input end of the second filter chip 60. Optionally, the sixth matching circuit 601 may include an output matching circuit (such as an output matching inductor) connected to the output end of the second filter chip 60, or may not include an output matching circuit connected to the output end of the second filter chip 60.

[0150] Among them, Fig.10 As shown, the grounded metal film 50 is at least partially located between an input matching circuit connected to the input end of the first filter chip 20 and an input matching circuit connected to the input end of the second filter chip 60 .

[0151] Please refer to the above examples. Fig.11 ,like Fig.11 The figure is a schematic block diagram of an electronic device provided in an embodiment of the present application. The electronic device includes the aforementioned radio frequency front-end module.

[0152] The electronic device may be a communication device such as a mobile phone, a tablet computer, a vehicle-mounted terminal, or of course, may also be other communication devices with communication functions. The embodiments of the present application do not limit the specific type of the electronic device.

[0153] The specific principles and implementation methods of the electronic device provided in the embodiment of the present application are similar to those of the RF front-end module of the aforementioned embodiment and will not be repeated here.

[0154] It should be understood that the terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0155] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below may be represented as a second element, component, region, layer or part.

[0156] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0157] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0158] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the protection scope of the present application. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A radio frequency front-end module, characterized in that: The radio frequency front-end module comprises: substrate; A first RF signal link, a second RF signal link and a third RF signal link are arranged on the substrate, the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can simultaneously transmit RF signals, and the third RF signal link and the first RF signal link and the second RF signal link transmit RF signals at different times; Wherein, the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or The distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit.

2. The RF front-end module according to claim 1, characterized in that: The first filter and the third filter are arranged on a first filter chip, the first filter chip comprises a first end and a second end arranged opposite to each other, and the first filter is arranged closer to the first end of the first filter chip than the third filter; The second filter is arranged on a second filter chip, the second filter chip is arranged apart from the first filter chip, and the second end of the first filter chip is closer to the second filter chip than the first end of the first filter chip.

3. The RF front-end module according to claim 1, characterized in that: The first filter is arranged on a first filter chip, the second filter is arranged on a second filter chip, and the third filter is arranged on a third filter chip; The distance between the first filter chip and the second filter chip is greater than the distance between the third filter chip and the first filter chip and the distance between the third filter chip and the second filter chip.

4. The RF front-end module according to claim 2, characterized in that: The projection of the first filter chip along the first direction does not overlap with the projection of the second filter chip along the first direction at least in part; and / or the projection of the first filter chip along the second direction does not overlap with the projection of the second filter chip along the second direction; The first direction is parallel to a first side of the substrate, the second direction is parallel to a second side of the substrate, and the first side of the substrate is adjacent to the second side.

5. The RF front-end module according to any one of claims 1 to 4, characterized in that: The RF front-end module further includes a fourth RF signal link, and the fourth RF signal link can transmit RF signals simultaneously with the first RF signal link; the fourth RF signal link includes a fourth filter, and the fourth filter and the first filter are arranged on the first filter chip; The first filter chip comprises a first end and a second end which are arranged opposite to each other, the first filter is arranged at the first end of the first filter chip, and the fourth filter is arranged at the second end of the first filter chip; and / or On the first filter chip, at least one filter is arranged between the first filter and the fourth filter.

6. The RF front-end module according to claim 5, characterized in that: The operating frequency band of the first RF signal link is higher than the operating frequency band of the fourth RF signal link, and the first end of the first filter chip is arranged farther away from the other filter chips on the substrate than the second end of the first filter chip.

7. The RF front-end module according to any one of claims 1 to 4, characterized in that: At least one matching circuit of a radio frequency signal chain is arranged between the first filter and the second filter.

8. The RF front-end module according to any one of claims 1 to 4, characterized in that: At least one matching circuit is provided between the first matching circuit and the second matching circuit, and the at least one matching circuit is a matching circuit of a radio frequency signal chain other than the first radio frequency signal chain and the second radio frequency signal chain.

9. The RF front-end module according to claim 8, characterized in that: The first matching circuit includes a first input matching circuit, the second matching circuit includes a second input matching circuit, and the third matching circuit includes a third input matching circuit; each input matching circuit is connected to an input end of a corresponding filter; The third input matching circuit is provided between the first input matching circuit and the second input matching circuit.

10. The RF front-end module according to claim 8, characterized in that: A projection of the at least one matching circuit along the first direction is at least partially located between a projection of the first matching circuit and a projection of the second matching circuit along the first direction; and / or A projection of the at least one matching circuit along a second direction is at least partially located between projections of the first matching circuit and the second matching circuit along the second direction, and the second direction intersects the first direction; The first direction is parallel to a side of the substrate.

11. The RF front-end module according to any one of claims 1 to 4, characterized in that: The RF front-end module further includes an antenna port and a switch chip, wherein the switch chip includes at least a first switch path, a second switch path, and a third switch path, wherein the first switch path is connected between the antenna port and the first filter, the second switch path is connected between the antenna port and the second filter, and the third switch path is connected between the antenna port and the third filter; the switch chip is used to conduct the corresponding switch path according to the frequency band of the RF signal received by the antenna port, so as to transmit the received RF signal to the filter corresponding to the conducted switch path; The switch chip is arranged between the first matching circuit and the second matching circuit.

12. The RF front-end module according to claim 11, characterized in that: The projection of the first matching circuit on the first straight line, the projection of the switch chip on the first straight line and the projection of the second matching circuit on the first straight line are spaced apart, and the projection of the first matching circuit on the first straight line and the projection of the second matching circuit on the first straight line are respectively located on both sides of the projection of the switch chip on the first straight line; wherein the first straight line is parallel to the side of the switch chip.

13. The RF front-end module according to claim 11, characterized in that: The RF front-end module includes at least two of the first RF signal links, and the at least two first RF signal links include a first RF signal link of a first working frequency band and a first RF signal link of a second working frequency band, and the first working frequency band is higher than the second working frequency band, and / or the bandwidth of the first working frequency band is greater than the bandwidth of the second working frequency band, and / or the first RF signal link of the first working frequency band can also simultaneously transmit RF signals with at least one RF signal link other than the second RF signal link; The projection of the switch chip on the first straight line is at least partially located between the projection of the first matching circuit corresponding to the first operating frequency band on the first straight line and the projection of the second matching circuit on the first straight line; the projection of the first matching circuit corresponding to the second operating frequency band on the first straight line at least partially overlaps with the projection of the switch chip on the first straight line; the first straight line is parallel to the side of the switch chip.

14. The RF front-end module according to claim 12 or 13, characterized in that: The switch chip is rectangular, and includes a first side and a second side opposite to each other, and a third side adjacent to the first side and the second side, wherein the length of the third side is greater than the length of the first side and the length of the second side; the first straight line is parallel to the third side.

15. The radio frequency front-end module according to any one of claims 1 to 4, characterized in that: The distance between different filters includes: the distance between input ends of different filters, and / or the distance between output ends of different filters; The distances between different matching circuits include: the distances between input ends of different matching circuits, and / or the distances between output ends of different matching circuits, and / or the distances between centers of different matching circuits.

16. The radio frequency front-end module according to any one of claims 1 to 4, characterized in that: The RF front-end module also includes a fourth RF signal link, the fourth RF signal link can transmit RF signals simultaneously with the first RF signal link, the fourth RF signal link includes a fourth filter and a fourth matching circuit, and the fourth filter and the first filter of the first RF signal link are arranged on a first filter chip; The first matching circuit and the fourth matching circuit are arranged close to different sides of the first filter chip.

17. The RF front-end module according to claim 16, characterized in that: The projection of the first filter chip along the first direction is at least partially located between the projections of the first matching circuit and the fourth matching circuit along the first direction; and / or The projection of the first filter chip along the second direction is at least partially located between the projections of the first matching circuit and the fourth matching circuit along the second direction, and the second direction intersects with the first direction; The first direction is parallel to a side of the substrate.

18. An electronic device, characterized in that: The electronic device comprises a radio frequency front-end module as claimed in any one of claims 1 to 17.

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