Semiconductor light-emitting element and light-emitting device

Abstract

The invention provides a semiconductor light-emitting element and a light-emitting device. The semiconductor light-emitting element comprises a light-emitting epitaxial layer, a first insulating layer, a contact electrode, a second insulating layer, a first bonding pad electrode, a second bonding pad electrode and a first buffer part, the light-emitting epitaxial layer comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; the first insulating layer has a first opening and a second opening; the contact electrodes comprise a first contact electrode and a second contact electrode; the first contact electrode extends along the second direction to form a first protruding part; the first bonding pad electrode is electrically connected with the first conductive type semiconductor layer; the second bonding pad electrode is electrically connected with the second conductive type semiconductor layer; in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer part is overlapped with the first convex part; in the first direction, the projection of the second bonding pad electrode, the projection of the first protruding part and the projection of the first buffer part have an overlapped part; the first direction is perpendicular to the second direction.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor devices and packaging technology, and in particular, relates to a semiconductor light-emitting element and a light-emitting device. Background Art

[0002] Semiconductor light-emitting elements, namely light-emitting diodes (LEDs), have high conversion efficiency and are widely used in lighting, display screens, automobiles, communications and other fields.

[0003] At present, the structure of LED chips usually includes a substrate and an epitaxial structure, as well as a metal reflective layer, an insulating layer, a contact electrode and a pad electrode arranged on the side of the epitaxial structure away from the substrate, wherein part of the insulating layer covers the contact electrode and has an opening to expose part of the contact electrode. However, during the existing process, defects (such as impurities and foreign matter in the process chamber, etc.) are inevitably introduced, which may cause cracks or perforations in the insulating layer. When soldering the pad electrode, the solder AuSn overflows from the position where the insulating layer is broken and penetrates into the contact electrode with different electrical polarity, causing leakage. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor light emitting element and a light emitting device to solve the problems existing in the above-mentioned background technology.

[0005] The present application provides a semiconductor light emitting element, comprising:

[0006] A light-emitting epitaxial layer, the light-emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence;

[0007] A first insulating layer, located on the light-emitting epitaxial layer, wherein the first insulating layer has a first opening and a second opening;

[0008] A contact electrode is provided on the first insulating layer, the contact electrode comprises a first contact electrode and a second contact electrode, the first contact electrode is electrically insulated from the second contact electrode; the first contact electrode is electrically connected to the first conductive type semiconductor layer through the first opening; the second contact electrode is electrically connected to the second conductive type semiconductor layer through the second opening; wherein the first contact electrode extends along the second direction to form at least one first protrusion;

[0009] A second insulating layer is disposed on the contact electrode;

[0010] A first pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the first conductive type semiconductor layer;

[0011] a second pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the second conductive type semiconductor layer;

[0012] A first buffer portion is formed in the second insulating layer; in the stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion overlaps with the first protruding portion; and in the first direction, a projection of the second pad electrode, a projection of the first protruding portion, and a projection of the first buffer portion have an overlapping portion;

[0013] The first direction and the second direction are perpendicular.

[0014] The present application also provides a light-emitting device, comprising the above-mentioned semiconductor light-emitting element.

[0015] Compared with the prior art, the beneficial effects of the present invention include at least:

[0016] The present application sets a first buffer portion, which can strengthen the structure of the second insulating layer, so that the insulating layer above the contact electrode is not easily prone to defects such as cracks or holes due to impurities and foreign matter, so that the solder on the pad electrode overflows to the contact electrode with different electrical polarity during crystal bonding, causing a short circuit abnormality. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a schematic diagram of the cross-sectional structure of a semiconductor light-emitting element in the prior art;

[0019] Figure 2a is a schematic diagram of the longitudinal cross-section structure of a semiconductor light emitting element according to the first embodiment of the present invention;

[0020] Figure 2b is a schematic diagram of the longitudinal cross-section structure of a semiconductor light emitting element according to the second embodiment of the present invention;

[0021] Figures 3 to 8 is a schematic cross-sectional structure diagram of a semiconductor light emitting element in some embodiments of the present invention;

[0022] Fig. 9 Schematic diagram of the top view of the light emitting device according to the third embodiment of the present invention; reference numerals:

[0023] 11. first contact electrode; 11a. first recessed portion; 12. first pad electrode; 21. second contact electrode; 21a. first protruding portion; 22. second pad electrode; 101. substrate; 102. light-emitting epitaxial layer; 102a. first conductive type semiconductor layer; 102b. active layer; 102c. second conductive type semiconductor layer; 104. insulating layer; 105. metal reflective layer; 106. first insulating layer; 106a. first opening; 106b. second opening; 106c. third opening; 106d. second buffer portion; 106e. fourth opening; 107. second insulating layer; 107c. first buffer portion; 107c1. second portion; 107c2. first portion; 300. light-emitting device; 301. light-emitting element; 302. circuit substrate; X. first direction; Y. second direction. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0026] The present application provides a semiconductor light emitting element, comprising:

[0027] A light-emitting epitaxial layer, the light-emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence;

[0028] A first insulating layer, located on the light-emitting epitaxial layer, wherein the first insulating layer has a first opening and a second opening;

[0029] A contact electrode is provided on the first insulating layer, the contact electrode comprises a first contact electrode and a second contact electrode, the first contact electrode is electrically insulated from the second contact electrode; the first contact electrode is electrically connected to the first conductive type semiconductor layer through the first opening; the second contact electrode is electrically connected to the second conductive type semiconductor layer through the second opening; wherein the first contact electrode extends along the second direction to form at least one first protrusion;

[0030] A second insulating layer is disposed on the contact electrode;

[0031] A first pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the first conductive type semiconductor layer;

[0032] a second pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the second conductive type semiconductor layer;

[0033] A first buffer portion is formed in the second insulating layer; in the stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion overlaps with the first protruding portion; and in the first direction, a projection of the second pad electrode, a projection of the first protruding portion, and a projection of the first buffer portion have an overlapping portion;

[0034] The first direction and the second direction are perpendicular.

[0035] Optionally, in the stacking direction of the light-emitting epitaxial layers, a projection of the first buffer portion covers the first protruding portion.

[0036] Optionally, in the stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion and the second contact electrode have an overlapping area.

[0037] Optionally, the first pad electrode and the second pad electrode are arranged at intervals along the second direction;

[0038] The second contact electrode forms at least one first recessed portion along a second direction;

[0039] In the stacking direction of the light-emitting epitaxial layer, the first protruding portion is located in the corresponding first recessed portion, and a projection of the first buffer portion has an overlapping area with the first recessed portion.

[0040] Optionally, the material of the first buffer portion is Au, Ti, Ni, Al, Ag, Cr, Pt or Al2O3;

[0041] Optionally, the thickness of the first buffer portion is between 800A and 8000A.

[0042] Optionally, the thickness of the second insulating layer located above the first buffer portion is between 2000A and 6000A; the thickness of the second insulating layer located below the first buffer portion is between 2000A and 6000A.

[0043] Optionally, the second insulating layer has a third opening and a fourth opening;

[0044] The first pad electrode is electrically connected to the first contact electrode through the third opening, and the second pad electrode is electrically connected to the second contact electrode through the fourth opening;

[0045] A projection of the first buffer portion in the stacking direction of the light-emitting epitaxial layer is located between the first pad electrode and the second pad electrode.

[0046] Optionally, the first buffer portion includes a first part and a second part;

[0047] The first part extends along the first direction; the second part extends along the second direction; in the stacking direction of the light-emitting epitaxial layer, the projection of the first part is located between the first pad electrode and the second pad electrode, and the projection of the second part at least covers the first opening.

[0048] Optionally, a second buffer portion is provided inside the first insulating layer, and in the stacking direction of the light-emitting epitaxial layer, a projection of the second buffer portion at least covers the first opening.

[0049] The present application also provides a light-emitting device, comprising the above-mentioned semiconductor light-emitting element.

[0050] Figure 1 The cross-sectional structure diagram of a light-emitting element according to the prior art is shown. The light-emitting element includes a substrate 101, a light-emitting epitaxial layer 102, a first contact electrode 11, a first pad electrode 12, a second contact electrode 21, a second pad electrode 22, a first insulating layer 106, and a second insulating layer 107, wherein the second insulating layer 107 covers the contact electrode and has an opening to expose a portion of the contact electrode. When the pad electrode is soldered, the solder AuSn may penetrate from the position where cracks or holes are easily formed in the second insulating layer 107 and cause leakage to the contact electrode with different electrical polarity.

[0051] Combined with the following Figure 2a-Figure 9 , the specific implementation methods of the present invention for solving the above problems are described in detail.

[0052] Embodiment 1

[0053] This embodiment is for explaining the light emitting element of the present invention in detail with reference to the drawings.

[0054] Reference Figure 2a The light emitting element of this embodiment includes a substrate 101, a light emitting epitaxial layer 102, a contact electrode and a pad electrode.

[0055] Reference Figure 3 The substrate 101 includes a first side E1, a second side E2, a third side E3 and a fourth side E4 connected in sequence, and the fourth side E4 is connected to the first side E1 to form a closed loop. The first side E1 and the third side E3 extend along the first direction X, and the second side E2 and the fourth side E4 extend along the second direction Y. The substrate 101 can be a conductive substrate or an insulating substrate, for example, a sapphire substrate.

[0056] Reference Figure 2a The light-emitting epitaxial layer 102 includes a first conductive type semiconductor layer 102a, an active layer 102b, and a second conductive type semiconductor layer 102c sequentially formed on the substrate 101. The light-emitting epitaxial layer 102 is used to emit light of a preset wavelength or an emission angle. The active layer 102b includes a multi-quantum well structure (MQW) that can emit a desired wavelength.

[0057] Reference Figure 2a , a transparent conductive layer 103, an insulating layer 104 and a metal reflective layer 105 are sequentially formed on the side of the second conductive type semiconductor layer 102c away from the active layer 102b. The transparent conductive layer 103 has good light transmittance, so that the light emitted from the light-emitting epitaxial layer 102 has less energy loss when passing through the transparent conductive layer 103. The transparent conductive layer 103 can be formed by physical vapor deposition or chemical vapor deposition. The metal reflective layer 105 is arranged above the insulating layer 104, and the insulating layer 104 and the metal reflective layer 105 together form a full-angle reflector (i.e., an ODR reflective structure), which can further improve the light extraction efficiency of the light-emitting diode. The material of the metal reflective layer 105 can include a combination of one or more metals such as silver, aluminum, titanium, tungsten, and nickel.

[0058] Reference Figure 2a The first insulating layer 106 is located on the light-emitting epitaxial layer 102, and has a first opening 106a and a second opening 106b; the first insulating layer 106 covers the metal reflective layer 105, and extends to cover the edge of the insulating layer 104. The first insulating layer 106 can be formed by physical vapor deposition or chemical vapor deposition, and the formed first insulating layer 106 can be patterned by photolithography or etching. The material of the first insulating layer 106 includes silicon dioxide, silicon nitride, etc.

[0059] Reference Figure 2a The contact electrodes are formed on the light-emitting epitaxial layer 102, and the contact electrodes include a first contact electrode 11 and a second contact electrode 21, and the first contact electrode 11 is electrically insulated from the second contact electrode 21. The second contact electrode 21 contacts the metal reflective layer 105 through the second opening 106b and is electrically connected to the second conductive type semiconductor layer 102c; the first contact electrode 11 is electrically connected to the first conductive type semiconductor layer 102a through the first opening 106a. The materials of the first contact electrode 11 and the second contact electrode 21 can be metal materials, including a combination of one or more of chromium, titanium, nickel, platinum, aluminum, and gold.

[0060] Reference Figure 2aThe pad electrode includes a first pad electrode 12 and a second pad electrode 22 provided with an insulating interval. The second pad electrode 22 is formed on the second contact electrode 21 and is electrically connected to the second contact electrode 21. The first pad electrode 12 is formed on the first contact electrode 11 and is electrically connected to the first contact electrode 11. The first pad electrode 12 and the second pad electrode 22 can be formed by evaporation or vapor deposition of a conductive material. The conductive material can be a metal material or an alloy material, such as a combination of one or more of Au, Ag, Al, Cu, Pt, Ti, and Cr.

[0061] Reference Figure 3 The first contact electrode 11 extends along the second direction Y to form at least one first protrusion 11a. Figure 3 , the first contact electrode 11 has three first protrusions 11a. Since the projection of the first opening 106a in the stacking direction of the light-emitting epitaxial layer has an overlapping area with the first protrusion 11a, if the second insulating layer 107 above the first opening 106a is broken, the solder AuSn is easy to penetrate from the cracks or holes in the second insulating layer 107 and contact with the contact electrodes of different electrical polarities, thereby causing leakage risk.

[0062] Reference Figure 2a , the second insulating layer 107 is disposed on the contact electrode. The second insulating layer 107 has a third opening 106c and a fourth opening 106e; the first pad electrode 12 is electrically connected to the first contact electrode 11 through the third opening 106c, and the second pad electrode 22 is electrically connected to the second contact electrode 21 through the fourth opening 106e. The second insulating layer 107 can be formed by physical vapor deposition or chemical vapor deposition, and the formed second insulating layer 107 can be patterned by photolithography or etching. The material of the second insulating layer 107 includes silicon dioxide, silicon nitride, etc.

[0063] Reference Figure 4 , a first buffer portion 107c is provided inside the second insulating layer 107. The first buffer portion 107c can strengthen the structure of the second insulating layer 107, so that the second insulating layer 107 is not easily defective such as cracks or holes due to impurities and foreign matter, so that during the die bonding, the solder on the first pad electrode 12 overflows to the second contact electrode 21 to cause a short circuit abnormality, or the solder on the second pad electrode 22 overflows to the first contact electrode 11 to cause a short circuit abnormality.

[0064] Reference Figure 4 In the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c overlaps with the first protruding portion 11a, so that the second insulating layer 107 has a higher structural strength in the portion overlapping with the first protruding portion 11a. This improvement in structural strength helps to avoid defects such as cracks or holes in the overlapping portion.

[0065] Reference Figure 5 In the first direction X, the projection of the second pad electrode 22 and the projection of the first protrusion 11a and the projection of the first buffer portion 107c have an overlapping portion, so that the first pad electrode 12 is blocked by the first buffer portion 107c between the first pad electrode 12 and the first protrusion 11a in the first direction X, that is, the second insulating layer 107 between the second pad electrode 22 and the first protrusion 11a in the first direction X has a higher structural strength. The improvement of the structural strength helps to avoid defects such as cracks or holes in the overlapping portions.

[0066] Reference Figure 4 In some embodiments of the present invention, in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c covers the first protrusion 11a, so that the second insulating layer 107 is completely blocked by the first buffer portion 107c from the first protrusion 11a in the stacking direction of the light-emitting epitaxial layer, that is, the entire second insulating layer 107 above the first protrusion 11a has a higher structural strength, thereby preventing solder from overflowing from cracks or holes in the second insulating layer 107 above the first protrusion 11a to the vicinity of the first protrusion 11a of the second contact electrode 21 below, causing leakage.

[0067] In some embodiments of the present invention, in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c has an overlapping area with the first contact electrode 11, so that the range of the first buffer portion 107c is not limited to above the first protrusion 11a, and covers a partial area of ​​the first contact electrode 11 adjacent to the first protrusion 11a. That is to say, the first buffer portion 107c is arranged above the first contact electrode 11 and is located at the edge of the first pad electrode 12 close to the first opening 106a, further reducing the possibility of solder overflowing from the first pad electrode 12 toward cracks or holes in the second insulating layer 107.

[0068] Reference Figure 5 The first pad electrode 12 and the second pad electrode 22 are arranged in a spaced relationship along the second direction Y, and the second contact electrode 21 is sunken along the second direction Y to form at least one first recessed portion 21a. Figure 3 The first contact electrode 11 has three first recessed portions 21 a , and in the stacking direction of the light-emitting epitaxial layer, the first protruding portion 11 a is located in the corresponding first recessed portion 21 a .

[0069] Since the projection of the first opening 106a in the stacking direction of the light-emitting epitaxial layer has an overlapping area with the first recessed portion 21a, if the second insulating layer 107 above the first opening 106a is broken, the solder AuSn is easy to penetrate from the position of the crack or hole in the second insulating layer 107 and contact with the contact electrode of different electrical polarity to form a leakage risk. Therefore, in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c has an overlapping area with the first recessed portion 21a, so that the second insulating layer 107 has a higher structural strength in the portion overlapping with the first recessed portion 21a, and the improvement of this structural strength helps to avoid defects such as cracks or holes in the overlapping portion.

[0070] In some embodiments of the present invention, the material of the first buffer portion 107c is a metal material such as Au, Ti, Ni, Al, Ag, Cr, Pt, or a non-metal material such as Al2O3.

[0071] In some embodiments of the present invention, the thickness of the first buffer portion 107c is between 800A and 8000A to ensure that the first buffer portion 107c can enhance the strength of the second insulating layer 107 and provide durability for the second insulating layer 107. The second insulating layer 107 above the contact electrode is not prone to defects such as cracks or holes due to impurities and foreign matter, which would cause the solder on the pad electrode to overflow to the contact electrode with different electrical polarity during die bonding and cause a short circuit anomaly.

[0072] Reference Figure 2a In some embodiments of the present invention, the second insulating layer 107 can be divided into an upper insulating layer and a lower insulating layer (not shown in the figure) according to the position of the first buffer portion 107c. The upper insulating layer is located above the first buffer portion 107c and covers the edge of the first buffer portion 107c, and is used to separate the first buffer portion 107c from the first pad electrode 12 and the second pad electrode 22. The thickness of the upper insulating layer is between 2000A and 6000A. The lower insulating layer is located below the first buffer portion 107c, and is used to separate the first buffer portion 107c from the second contact electrode 21 and the first contact electrode 11, and provide support for the first buffer portion 107c. The thickness of the lower insulating layer is between 2000A and 6000A.

[0073] Reference Figure 5 The projection of the first buffer portion 107c in the stacking direction of the light-emitting epitaxial layer is located between the first pad electrode 12 and the second pad electrode 22, so that the second insulating layer 107 between the second pad electrode 22 and the first pad electrode 12 has a higher structural strength. The improvement of this structural strength helps to avoid defects such as cracks or holes in the overlapping parts, and prevent the solder of the second pad electrode 22 and the first pad electrode 12 from overflowing from defects such as cracks or holes in the second insulating layer 107.

[0074] The projection area and projection shape of the first buffer portion 107c in the stacking direction of the light-emitting epitaxial layer may not be limited to Figure 4 As shown, it can also be other suitable shapes to make the second insulating layer 107 between the second pad electrode 22 and the first pad electrode 12 have a higher structural strength. Figure 6 and Figure 7 The first buffer portion 107c includes a first portion 107c2 and a second portion 107c1 (shown by a dotted line in the figure). The first portion 107c2 and the second portion 107c1 are connected. The first portion 107c2 extends along the first direction X. In the stacking direction of the light-emitting epitaxial layer, the projection of the first portion 107c2 is located between the first pad electrode 12 and the second pad electrode 22. The second portion 107c1 extends along the second direction Y. There may be a plurality of second portions 107c1, and the plurality of second portions 107c1 are arranged at intervals along the first direction X. In the stacking direction of the light-emitting epitaxial layer, the projection of the second portion 107c1 at least covers the first opening 106a.

[0075] In some embodiments of the present invention, reference Figures 3 to 7 In the stacking direction of the light-emitting epitaxial layer, the first contact electrode 11 and the second contact electrode 21 are arranged at intervals along the second direction Y, so at least a portion of the first buffer portion 107c is also arranged along the second direction Y to fill the gap between the first contact electrode 11 and the second contact electrode 21, ensuring that the second insulating layer 107 between the first contact electrode 11 and the second contact electrode 21 has a higher structural strength.

[0076] In other embodiments of the present invention, referring to Figure 8 In the stacking direction of the light-emitting epitaxial layer, the first contact electrode 11 is arranged around the circumference of the second contact electrode 21 and extends to cover the edge of the substrate 101. In order to make the second insulating layer 107 between the first contact electrode 11 and the second contact electrode 21 have a higher structural strength, the projection of the first buffer portion 107c (shown by a dotted line in the figure) in the stacking direction of the light-emitting epitaxial layer is located between the first contact electrode 11 and the second contact electrode 21, and the first buffer portion 107c has an overlapping portion with the second contact electrode 21 and the first contact electrode 11.

[0077] Embodiment 2

[0078] This embodiment is used to further illustrate the semiconductor light emitting element of the present invention. Figure 2b The features of this embodiment that are the same as those of the first embodiment will not be described in detail, and only the differences will be described in detail.

[0079] In some embodiments of the present invention, a second buffer portion 106d is provided inside the first insulating layer 106, and the second buffer portion 106d can strengthen the structure of the first insulating layer 106, so that the first insulating layer 106 is not easily cracked or pore-like due to impurities and foreign matter, causing the contact electrode to contact the metal reflective layer 105 with opposite polarity, resulting in a short circuit abnormality. Figure 2b By simultaneously providing the second buffer portion 106d and the first buffer portion 107c, the overall structure of the first insulating layer 106 and the second insulating layer 107 between the first pad electrode 12 and the second pad electrode 22 is stabilized, thereby reducing the probability of the first insulating layer 106 and the second insulating layer 107 being broken, thereby reducing the risk of short circuit abnormalities.

[0080] In some embodiments of the present invention, in the stacking direction of the light-emitting epitaxial layer, the projection of the second buffer portion 106d overlaps with the first protrusion 11a, so that the first insulating layer 106 has a higher structural strength in the portion overlapping with the first protrusion 11a. This increase in structural strength helps to avoid defects such as cracks or holes in the overlapping portion.

[0081] Furthermore, in the stacking direction of the light-emitting epitaxial layer, the projection of the second buffer portion 106d covers the first protrusion 11a, so that the first insulating layer 106 is blocked by the second buffer portion 106d between the first protrusion 11a in the stacking direction of the light-emitting epitaxial layer, thereby avoiding defects such as cracks or holes in the portion of the first insulating layer 106 overlapping with the first protrusion 11a.

[0082] The material of the second buffer portion 106 d is a metal material such as Au, Ti, Ni, Al, Ag, Cr, Pt or a non-metal material such as Al 2 O 3 , and may be the same as the material used for the first contact electrode 11 and the second contact electrode 21 .

[0083] Embodiment 3

[0084] This embodiment is used to illustrate the light emitting device of the present application. Fig. 9 As shown, the light emitting device 300 of the present application includes a plurality of light emitting elements 301 of the present application, and also includes a circuit substrate 302 and solder.

[0085] The circuit substrate 302 includes a plurality of pad electrodes, and a plurality of light emitting elements 301 are arranged on the circuit substrate 302. The light emitting elements 301 are attached to the pad electrodes on the circuit substrate 302 by solder.

[0086] The light-emitting element of the present application has a first insulating layer 106 and a second insulating layer 107 that are not easily broken. Therefore, the light-emitting device of the present application has reliable quality and a low risk of failure.

[0087] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor light emitting element, characterized in that: include: A light-emitting epitaxial layer, the light-emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence; A first insulating layer, located on the light-emitting epitaxial layer, wherein the first insulating layer has a first opening and a second opening; A contact electrode, disposed on the first insulating layer, the contact electrode comprising a first contact electrode and a second contact electrode, the first contact electrode being electrically insulated from the second contact electrode; The first contact electrode is electrically connected to the first conductive type semiconductor layer through the first opening; the second contact electrode is electrically connected to the second conductive type semiconductor layer through the second opening; wherein the first contact electrode extends along the second direction to form at least one first protrusion; A second insulating layer is disposed on the contact electrode; A first pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the first conductive type semiconductor layer; a second pad electrode, formed on the light-emitting epitaxial layer and electrically connected to the second conductive type semiconductor layer; A first buffer portion is formed in the second insulating layer; in the stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion overlaps with the first protruding portion; and in the first direction, a projection of the second pad electrode, a projection of the first protruding portion, and a projection of the first buffer portion have an overlapping portion; The first direction and the second direction are perpendicular.

2. The semiconductor light emitting element according to claim 1, characterized in that In the stacking direction of the light-emitting epitaxial layers, the projection of the first buffer portion covers the first protruding portion.

3. The semiconductor light emitting element according to claim 2, characterized in that: In the stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion and the second contact electrode have an overlapping area.

4. The semiconductor light emitting element according to claim 3, characterized in that: The first pad electrode and the second pad electrode are arranged at intervals along a second direction; The second contact electrode forms at least one first recessed portion along a second direction; In the stacking direction of the light-emitting epitaxial layer, the first protruding portion is located in the corresponding first recessed portion, and a projection of the first buffer portion has an overlapping area with the first recessed portion.

5. The semiconductor light emitting element according to claim 1, characterized in that The material of the first buffer portion is Au, Ti, Ni, Al, Ag, Cr, Pt or Al2O3.

6. The semiconductor light emitting element according to claim 1, characterized in that The thickness of the first buffer portion is between 800A and 8000A.

7. The semiconductor light emitting element according to claim 1, wherein: The thickness of the second insulating layer located above the first buffer portion is between 2000A and 6000A; the thickness of the second insulating layer located below the first buffer portion is between 2000A and 6000A.

8. The semiconductor light emitting element according to claim 1, wherein: The second insulating layer has a third opening and a fourth opening; The first pad electrode is electrically connected to the first contact electrode through the third opening, and the second pad electrode is electrically connected to the second contact electrode through the fourth opening; A projection of the first buffer portion in the stacking direction of the light-emitting epitaxial layer is located between the first pad electrode and the second pad electrode.

9. The semiconductor light emitting element according to claim 8, characterized in that The first buffer portion includes a first portion and a second portion; The first portion extends along the first direction; the second portion extends along the second direction; In the stacking direction of the light-emitting epitaxial layer, the projection of the first portion is located between the first pad electrode and the second pad electrode, and the projection of the second portion at least covers the first opening.

10. The semiconductor light emitting element according to claim 1, wherein: A second buffer portion is provided inside the first insulating layer, and in the stacking direction of the light-emitting epitaxial layer, a projection of the second buffer portion at least covers the first opening.

11. A light emitting device, characterized in that: It comprises the semiconductor light emitting element as claimed in any one of claims 1 to 10.

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