Semiconductor light emitting element and light emitting device

Abstract

The application provides a semiconductor light-emitting element and a light-emitting device. The semiconductor light-emitting element comprises a light-emitting epitaxial layer, a first insulating layer, a contact electrode, a second insulating layer, a first pad electrode, a second pad electrode and a first buffer portion. The light-emitting epitaxial layer comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. The first insulating layer has a first opening and a second opening. The contact electrode comprises a first contact electrode and a second contact electrode. The first contact electrode extends along a second direction to form a first protruding portion. The first pad electrode is electrically connected to the first conductive type semiconductor layer. The second pad electrode is electrically connected to the second conductive type semiconductor layer. In a stacking direction of the light-emitting epitaxial layer, a projection of the first buffer portion overlaps the first protruding portion. In a first direction, a projection of the second pad electrode and projections of the first protruding portion and the first buffer portion have an overlapping portion. The first direction and the second direction are perpendicular.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor devices and packaging, in particular, relates to a semiconductor light emitting element and a light emitting device. BACKGROUND

[0002] The semiconductor light emitting element, i.e. light emitting diode (LED), has high conversion efficiency and is widely used in lighting, display screen, automobile, communication and other fields.

[0003] The current LED chip structure generally includes a substrate and an epitaxial structure, and a metal reflection layer, an insulating layer, a contact electrode and a pad electrode are arranged on the side of the epitaxial structure away from the substrate, wherein part of the insulating layer covers the contact electrode and has an opening to expose part of the contact electrode. However, in the process of the existing process, defects (such as impurities and foreign matters in the process chamber) will inevitably be introduced, which will cause cracks or perforation damage of the insulating layer, and the solder AuSn will overflow from the broken position of the insulating layer and penetrate into the contact electrode with different electrode polarity during the welding of the pad electrode, resulting in the phenomenon of electric leakage. SUMMARY

[0004] The purpose of the present application is to provide a semiconductor light emitting element and a light emitting device to solve the problems existing in the background art.

[0005] The present application provides a semiconductor light emitting element, comprising:

[0006] A light emitting epitaxial layer, the light emitting epitaxial layer comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence;

[0007] A first insulating layer is located on the light emitting epitaxial layer, and the first insulating layer has a first opening and a second opening;

[0008] A contact electrode is arranged on the first insulating layer, the contact electrode comprises a first contact electrode and a second contact electrode, the first contact electrode and the second contact electrode are electrically insulated; the first contact electrode is electrically connected with the first conductive type semiconductor layer through the first opening; the second contact electrode is electrically connected with the second conductive type semiconductor layer through the second opening; wherein the first contact electrode extends along a second direction to form at least one first protruding part;

[0009] A second insulating layer is arranged on the contact electrode;

[0010] A first pad electrode is formed on the light emitting epitaxial layer and is electrically connected with the first conductive type semiconductor layer;

[0011] A second pad electrode is formed on the light emitting epitaxial layer and is electrically connected with the second conductive type semiconductor layer.

[0012] A first buffer portion is formed in the second insulating layer, a projection of the first buffer portion overlaps the first protruding portion in the stacking direction of the light emitting epitaxial layer, and a projection of the second pad electrode, a projection of the first protruding portion and a projection of the first buffer portion have an overlapping portion in the first direction.

[0013] The first direction and the second direction are perpendicular.

[0014] The application also provides a light emitting device comprising the semiconductor light emitting element.

[0015] Compared with the prior art, the application has at least the following beneficial effects:

[0016] The first buffer portion can strengthen the structure of the second insulating layer, so that the insulating layer above the contact electrode is not prone to cracks or holes and other defects due to impurities and foreign matters, and the solder on the pad electrode does not overflow to the contact electrode of different polarity during die bonding, thereby preventing short circuit and abnormality. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some of the embodiments of the application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0018] Figure 1 A cross-sectional structure schematic diagram of a semiconductor light emitting element of the prior art;

[0019] Figure 2a A longitudinal cross-sectional structure schematic diagram of a semiconductor light emitting element of the first embodiment of the application;

[0020] Figure 2b A longitudinal cross-sectional structure schematic diagram of a semiconductor light emitting element of the second embodiment of the application;

[0021] Figures 3 to 8 A horizontal cross-sectional structure schematic diagram of a semiconductor light emitting element in some embodiments of the application;

[0022] Figure 9 A top view structure schematic diagram of a light emitting device of the third embodiment of the application; reference signs:

[0023] 11, first contact electrode; 11a, first recessed portion; 12, first pad electrode; 21, second contact electrode; 21a, first protruding portion; 22, second pad electrode; 101, substrate; 102, light emitting epitaxial layer; 102a, first conductive type semiconductor layer; 102b, active layer; 102c, second conductive type semiconductor layer; 104, insulating layer; 105, metal reflective layer; 106, first insulating layer; 106a, first opening; 106b, second opening; 106c, third opening; 106d, second buffer portion; 106e, fourth opening; 107, second insulating layer; 107c, first buffer portion; 107c1, second portion; 107c2, first portion; 300, light emitting device; 301, light emitting element; 302, circuit substrate; X, first direction; Y, second direction. DETAILED DESCRIPTION

[0024] In order to make the objects, technical solutions, and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings for the embodiments of the present application to make a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. All other embodiments obtained by a person of ordinary skill in the art without making creative efforts based on the embodiments in the present application belong to the scope of protection of the present application.

[0026] The present application provides a semiconductor light emitting element, comprising:

[0027] a light emitting epitaxial layer, the light emitting epitaxial layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer stacked in sequence;

[0028] a first insulating layer on the light emitting epitaxial layer, the first insulating layer having a first opening and a second opening;

[0029] a contact electrode on the first insulating layer, the contact electrode comprising a first contact electrode and a second contact electrode, the first contact electrode being electrically insulated from the second contact electrode; the first contact electrode being electrically connected to the first conductive type semiconductor layer through the first opening; the second contact electrode being electrically connected to the second conductive type semiconductor layer through the second opening; wherein the first contact electrode extends along a second direction to form at least one first protruding portion;

[0030] a second insulating layer disposed on the contact electrode;

[0031] a first pad electrode formed on the light emitting epitaxial layer and electrically connected to the first conductive type semiconductor layer;

[0032] a second pad electrode formed on the light emitting epitaxial layer and electrically connected to the second conductive type semiconductor layer;

[0033] a first buffer portion formed in the second insulating layer; a projection of the first buffer portion overlaps the first protruding portion in the light emitting epitaxial layer stacking direction; and a projection of the second pad electrode and a projection of the first protruding portion and a projection of the first buffer portion have overlapping portions in the first direction;

[0034] the first direction and the second direction are perpendicular.

[0035] Optionally, a projection of the first buffer portion covers the first protruding portion in the light emitting epitaxial layer stacking direction.

[0036] Optionally, a projection of the first buffer portion has an overlapping area with the second contact electrode in the light emitting epitaxial layer stacking direction.

[0037] Optionally, the first pad electrode and the second pad electrode are arranged along the second direction with intervals;

[0038] the second contact electrode forms at least one first recessed portion along the second direction;

[0039] the first protruding portion is located in the corresponding first recessed portion in the light emitting epitaxial layer stacking direction, and a projection of the first buffer portion has an overlapping area with the first recessed portion.

[0040] Optionally, a material of the first buffer portion is Au, Ti, Ni, Al, Ag, Cr, Pt or Al2O3;

[0041] Optionally, a thickness of the first buffer portion is between 800A and 8000A.

[0042] Optionally, a thickness of the second insulating layer above the first buffer portion is between 2000A and 6000A; a thickness of the second insulating layer below the first buffer portion is between 2000A and 6000A.

[0043] Optionally, the second insulating layer has a third opening and a fourth opening;

[0044] the first pad electrode is electrically connected to the first contact electrode through the third opening, and the second pad electrode is electrically connected to the second contact electrode through the fourth opening.

[0045] The projection of the first buffer portion in the light-emitting epitaxial layer stacking direction is located between the first pad electrode and the second pad electrode.

[0046] Optionally, the first buffer portion comprises a first part and a second part.

[0047] The first part extends along the first direction, the second part extends along the second direction, the projection of the first part in the light-emitting epitaxial layer stacking direction is located between the first pad electrode and the second pad electrode, and the projection of the second part covers at least the first opening.

[0048] Optionally, the first insulating layer is internally provided with a second buffer portion, and the projection of the second buffer portion in the light-emitting epitaxial layer stacking direction covers at least the first opening.

[0049] The application also provides a light-emitting device comprising the above semiconductor light-emitting element.

[0050] Figure 1 A cross-sectional structure of a light-emitting element according to the prior art is shown. The light-emitting element comprises a substrate 101, a light-emitting epitaxial layer 102, a first contact electrode 11, a first pad electrode 12, a second contact electrode 21, a second pad electrode 22, a first insulating layer 106, and a second insulating layer 107 covering the contact electrodes and having an opening to expose part of the contact electrodes. When the pad electrodes are soldered, the solder AuSn can penetrate from the position where the second insulating layer 107 is easy to crack or have holes to cause the phenomenon of leakage between the contact electrodes of different electrode polarities.

[0051] The specific embodiments of the application for solving the above problems are described in detail below in combination with Figures 2a-9

[0052] Embodiment One

[0053] This embodiment is used to describe the light-emitting element of the application in detail with reference to the accompanying drawings.

[0054] With reference to Figure 2a , the light-emitting element of this embodiment comprises a substrate 101, a light-emitting epitaxial layer 102, a contact electrode, and a pad electrode.

[0055] With reference to Figure 3 , the substrate 101 comprises a first edge E1, a second edge E2, a third edge E3, and a fourth edge E4 connected in sequence, and the fourth edge E4 is connected to the first edge E1 to form a closed loop. The first edge E1 and the third edge E3 extend along a first direction X, and the second edge E2 and the fourth edge E4 extend along a second direction Y. The substrate 101 can be a conductive substrate or an insulating substrate, for example, a sapphire substrate.​

[0056] Referring to Figure 2a The light emitting epitaxial layer 102 includes a first conductive type semiconductor layer 102a, an active layer 102b, and a second conductive type semiconductor layer 102c formed in sequence on the substrate 101. The light emitting epitaxial layer 102 is used to emit light of a preset wavelength or exit angle. The active layer 102b includes a multi-quantum well structure (MQW) and can emit a desired wavelength.

[0057] Referring to Figure 2a The second conductive type semiconductor layer 102c is formed with a transparent conductive layer 103, an insulating layer 104, and a metal reflective layer 105 in sequence away from the active layer 102b. The transparent conductive layer 103 has good light transmittance, so that the light emitted by the light emitting epitaxial layer 102 has little energy loss when passing through the transparent conductive layer 103. The transparent conductive layer 103 can be formed by physical vapor deposition or chemical vapor deposition. The metal reflective layer 105 is disposed above the insulating layer 104, and the insulating layer 104 and the metal reflective layer 105 together form a full-angle reflector (i.e., an ODR reflective structure), which can further improve the light extraction efficiency of the light emitting diode. The metal reflective layer 105 can include one or more combinations of silver, aluminum, titanium, tungsten, nickel, and the like.

[0058] Referring to Figure 2a The first insulating layer 106 is located on the light emitting epitaxial layer 102, and the first insulating layer 106 has a first opening 106a and a second opening 106b; the first insulating layer 106 covers the metal reflective layer 105 and extends to cover the edge of the insulating layer 104. The first insulating layer 106 can be formed by physical vapor deposition or chemical vapor deposition, and the formed first insulating layer 106 can be patterned by photolithography and etching. The material of the first insulating layer 106 includes silicon dioxide, silicon nitride, and the like.

[0059] Referring to Figure 2a The contact electrode is formed on the light emitting epitaxial layer 102, and the contact electrode includes a first contact electrode 11 and a second contact electrode 21, and the first contact electrode 11 and the second contact electrode 21 are electrically insulated. The second contact electrode 21 is electrically connected to the second conductive type semiconductor layer 102c through the second opening 106b and the metal reflective layer 105; the first contact electrode 11 is electrically connected to the first conductive type semiconductor layer 102a through the first opening 106a. The materials of the first contact electrode 11 and the second contact electrode 21 can be metal materials, including one or more combinations of chromium, titanium, nickel, platinum, aluminum, gold, and the like.

[0060] Referring to Figure 2aThe pad electrodes include a first pad electrode 12 and a second pad electrode 22, which are insulated from each other. The second pad electrode 22 is formed on and electrically connected to the second contact electrode 21. The first pad electrode 12 is formed on and electrically connected to the first contact electrode 11. The first pad electrode 12 and the second pad electrode 22 can be formed by vapor deposition or chemical vapor deposition of conductive materials. The conductive material can be a metallic material or an alloy material, such as one or more combinations of Au, Ag, Al, Cu, Pt, Ti, and Cr.

[0061] Reference Figure 3 The first contact electrode 11 extends along the second direction Y to form at least one first protrusion 11a. (Refer to...) Figure 3 The first contact electrode 11 has three first protrusions 11a. Since the projection of the first opening 106a in the stacking direction of the light-emitting epitaxial layer overlaps with the first protrusions 11a, if the second insulating layer 107 above the first opening 106a is broken, the solder AuSn can easily seep in from the cracks or holes in the second insulating layer 107 and come into contact with the contact electrodes of different polarities, thus creating a risk of leakage.

[0062] Reference Figure 2a A second insulating layer 107 is disposed on the contact electrode. The second insulating layer 107 has a third opening 106c and a fourth opening 106e; the first pad electrode 12 is electrically connected to the first contact electrode 11 through the third opening 106c, and the second pad electrode 22 is electrically connected to the second contact electrode 21 through the fourth opening 106e. The second insulating layer 107 can be formed by physical vapor deposition or chemical vapor deposition, and the formed second insulating layer 107 can be patterned by photolithography and etching. The material of the second insulating layer 107 includes silicon dioxide, silicon nitride, etc.

[0063] Reference Figure 4 The second insulating layer 107 has a first buffer portion 107c inside. The first buffer portion 107c can strengthen the structure of the second insulating layer 107, making the second insulating layer 107 less prone to defects such as cracks or holes due to impurities and foreign matter. This prevents solder from overflowing from the first pad electrode 12 to the second contact electrode 21 and causing a short circuit during die bonding, or solder from the second pad electrode 22 to the first contact electrode 11 and causing a short circuit.

[0064] Reference Figure 4 In the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c overlaps with the first protrusion 11a, so that the second insulating layer 107 has a higher structural strength in the part that overlaps with the first protrusion 11a. This improvement in structural strength helps to avoid defects such as cracks or holes in the overlapping part.

[0065] Reference Figure 5 In the first direction X, the projection of the second pad electrode 22 overlaps with the projection of the first protrusion 11a and the projection of the first buffer portion 107c, so that the first pad electrode 12 is blocked by the first buffer portion 107c between it and the first protrusion 11a in the first direction X. That is, the second insulating layer 107 between the second pad electrode 22 and the first protrusion 11a in the first direction X has high structural strength. This improvement in structural strength helps to avoid defects such as cracks or holes in the overlapping part.

[0066] Reference Figure 4 In some embodiments of the present invention, in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c covers the first protrusion 11a, so that the second insulating layer 107 is completely blocked from the first protrusion 11a in the stacking direction of the light-emitting epitaxial layer by the first buffer portion 107c. That is, the entire second insulating layer 107 above the first protrusion 11a has high structural strength, thereby preventing solder from overflowing from cracks or holes in the second insulating layer 107 above the first protrusion 11a to the vicinity of the first protrusion 11a of the lower second contact electrode 21, which would cause leakage.

[0067] In some embodiments of the present invention, in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion 107c overlaps with the first contact electrode 11, such that the range of the first buffer portion 107c is not limited to above the first protrusion 11a, and covers a portion of the first contact electrode 11 adjacent to the first protrusion 11a. That is, the first buffer portion 107c is disposed above the first contact electrode 11 and located at the edge of the first pad electrode 12 near the first opening 106a, further reducing the possibility of solder overflowing from the first pad electrode 12 toward the cracks or holes of the second insulating layer 107.

[0068] Reference Figure 5 The first pad electrode 12 and the second pad electrode 22 are arranged at intervals along the second direction Y, and the second contact electrode 21 is recessed along the second direction Y to form at least one first recess 21a. (Refer to...) Figure 3 The first contact electrode 11 has three first recesses 21a, and in the stacking direction of the light-emitting epitaxial layer, the first protrusion 11a is located in the corresponding first recess 21a.

[0069] Because the projection of the first opening 106a in the light-emitting epitaxial layer stacking direction overlaps with the first recess 21a, if the second insulating layer 107 above the first opening 106a cracks, the solder AuSn can easily seep in from the cracks or holes in the second insulating layer 107 and come into contact with the contact electrodes of different polarities, creating a risk of leakage. Therefore, in the light-emitting epitaxial layer stacking direction, the projection of the first buffer portion 107c overlaps with the first recess 21a, giving the second insulating layer 107 higher structural strength in the overlapping portion. This increased structural strength helps to avoid defects such as cracks or holes in the overlapping portion.

[0070] In some embodiments of the present invention, the material of the first buffer part 107c is a metallic material such as Au, Ti, Ni, Al, Ag, Cr, Pt or a non-metallic material such as Al2O3.

[0071] In some embodiments of the present invention, the thickness of the first buffer portion 107c is between 800 Å and 8000 Å, so as to ensure that the first buffer portion 107c can strengthen the strength of the second insulating layer 107 and provide the durability of the second insulating layer 107. The second insulating layer 107 above the contact electrode is not prone to defects such as cracks or holes due to impurities and foreign matter, so that the solder on the pad electrode overflows to the contact electrode with different polarity during die bonding, causing short circuit abnormalities.

[0072] Reference Figure 2a In some embodiments of the present invention, the second insulating layer 107 may be divided into an upper insulating layer and a lower insulating layer (not shown in the figure) according to the position of the first buffer portion 107c. The upper insulating layer is located above the first buffer portion 107c and covers the edge of the first buffer portion 107c, serving to space the first buffer portion 107c from the first pad electrode 12 and the second pad electrode 22. The thickness of the upper insulating layer is between 2000 Å and 6000 Å. The lower insulating layer is located below the first buffer portion 107c, serving to space the first buffer portion 107c from the second contact electrode 21 and the first contact electrode 11, and providing support for the first buffer portion 107c. The thickness of the lower insulating layer is between 2000 Å and 6000 Å.

[0073] Reference Figure 5 The projection of the first buffer portion 107c in the stacking direction of the light-emitting epitaxial layer is located between the first pad electrode 12 and the second pad electrode 22, so that the second insulating layer 107 between the second pad electrode 22 and the first pad electrode 12 has high structural strength. This improvement in structural strength helps to avoid defects such as cracks or holes in the overlapping part, and prevents the solder of the second pad electrode 22 and the first pad electrode 12 from overflowing from the second insulating layer 107 due to defects such as cracks or holes.

[0074] The projection area and projection shape of the first buffer section 107c in the stacking direction of the light-emitting epitaxial layer are not limited to... Figure 4 As shown, other suitable shapes can also be used to give the second insulating layer 107 between the second pad electrode 22 and the first pad electrode 12 higher structural strength. For example, see reference... Figure 6 and Figure 7 The first buffer portion 107c includes a first portion 107c2 and a second portion 107c1 (shown as dashed lines in the figure). The first portion 107c2 and the second portion 107c1 are connected. The first portion 107c2 extends along a first direction X. In the light-emitting epitaxial layer stacking direction, the projection of the first portion 107c2 is located between the first pad electrode 12 and the second pad electrode 22. The second portion 107c1 extends along a second direction Y. There can be multiple second portions 107c1, and the multiple second portions 107c1 are arranged at intervals along the first direction X. In the light-emitting epitaxial layer stacking direction, the projection of the second portion 107c1 at least covers the first opening 106a.

[0075] In some embodiments of the present invention, reference is made to... Figures 3 to 7 In the stacking direction of the light-emitting epitaxial layer, the first contact electrode 11 and the second contact electrode 21 are arranged at intervals along the second direction Y. Therefore, at least a portion of the first buffer portion 107c is also arranged along the second direction Y to fill the gap between the first contact electrode 11 and the second contact electrode 21, ensuring that the second insulating layer 107 between the first contact electrode 11 and the second contact electrode 21 has high structural strength.

[0076] In other embodiments of the present invention, reference is made to Figure 8 In the stacking direction of the light-emitting epitaxial layer, the first contact electrode 11 is disposed around the periphery of the second contact electrode 21 and extends to cover the edge of the substrate 101. In order to make the second insulating layer 107 between the first contact electrode 11 and the second contact electrode 21 have high structural strength, the projection of the first buffer portion 107c (shown as a dashed line in the figure) in the stacking direction of the light-emitting epitaxial layer is located between the first contact electrode 11 and the second contact electrode 21, and the first buffer portion 107c overlaps with the second contact electrode 21 and the first contact electrode 11.

[0077] Example 2

[0078] This embodiment is used to further illustrate the semiconductor light-emitting element of the present invention. (Refer to...) Figure 2b The features that are the same as those in Embodiment 1 will not be described in detail here; only the differences will be described in detail.

[0079] In some embodiments of the present invention, a second buffer portion 106d is provided inside the first insulating layer 106. The second buffer portion 106d can strengthen the structure of the first insulating layer 106, making the first insulating layer 106 less prone to defects such as cracks or holes caused by impurities or foreign matter, which could lead to short circuits caused by the contact electrode contacting the metal reflective layer 105 with opposite polarity. (Refer to...) Figure 2b By simultaneously providing the second buffer 106d and the first buffer 107c, the overall structure of the first insulating layer 106 and the second insulating layer 107 located between the first pad electrode 12 and the second pad electrode 22 is stabilized, reducing the probability of the first insulating layer 106 and the second insulating layer 107 breaking and thus reducing the risk of short circuit abnormalities.

[0080] In some embodiments of the present invention, the projection of the second buffer portion 106d overlaps with the first protrusion 11a in the stacking direction of the light-emitting epitaxial layer, so that the first insulating layer 106 has higher structural strength in the part that overlaps with the first protrusion 11a. This improvement in structural strength helps to avoid defects such as cracks or holes in the overlapping part.

[0081] Furthermore, in the stacking direction of the light-emitting epitaxial layer, the projection of the second buffer portion 106d covers the first protrusion 11a, so that the first insulating layer 106 is blocked by the second buffer portion 106d between it and the first protrusion 11a in the stacking direction of the light-emitting epitaxial layer, thereby avoiding defects such as cracks or holes in the part of the first insulating layer 106 that overlaps with the first protrusion 11a.

[0082] The material of the second buffer section 106d is a metallic material such as Au, Ti, Ni, Al, Ag, Cr, Pt or a non-metallic material such as Al2O3, and can be the same as the material used for the first contact electrode 11 and the second contact electrode 21.

[0083] Example 3

[0084] This embodiment is used to illustrate the light-emitting device of this application. For example... Figure 9 As shown, the light-emitting device 300 of this application includes a plurality of light-emitting elements 301 of this application, as well as a circuit board 302 and solder.

[0085] The circuit board 302 includes multiple pad electrodes, and multiple light-emitting elements 301 are arranged on the circuit board 302. Solder is used to attach the light-emitting elements 301 to the pad electrodes on the circuit board 302.

[0086] The light-emitting element of this application has reliable quality and low failure risk because its first insulating layer 106 and second insulating layer 107 are not easily broken.

[0087] The above are merely preferred embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A semiconductor light-emitting element, characterized in that, include: The light-emitting epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked sequentially. A first insulating layer is located on the light-emitting epitaxial layer, and the first insulating layer has a first opening and a second opening; A contact electrode is disposed on the first insulating layer. The contact electrode includes a first contact electrode and a second contact electrode, and the first contact electrode and the second contact electrode are electrically insulated from each other. The first contact electrode is electrically connected to the first conductive type semiconductor layer through the first opening; the second contact electrode is electrically connected to the second conductive type semiconductor layer through the second opening; wherein, the first contact electrode extends along the second direction to form at least one first protrusion; A second insulating layer is disposed on the contact electrode; The first pad electrode is formed on the light-emitting epitaxial layer and is electrically connected to the first conductivity type semiconductor layer. The second pad electrode is formed on the light-emitting epitaxial layer and is electrically connected to the second conductivity type semiconductor layer. A first buffer portion is formed within the second insulating layer; in the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion overlaps with the first protrusion; and in the first direction, the projections of the second pad electrode, the first protrusion, and the first buffer portion overlap. The first direction and the second direction are perpendicular; The first insulating layer has a second buffer portion inside, and the projection of the second buffer portion at least covers the first opening in the stacking direction of the light-emitting epitaxial layer.

2. The semiconductor light-emitting element according to claim 1, characterized in that, In the stacking direction of the light-emitting epitaxial layers, the projection of the first buffer portion covers the first protrusion.

3. The semiconductor light-emitting element according to claim 2, characterized in that, In the stacking direction of the light-emitting epitaxial layer, the projection of the first buffer portion overlaps with the second contact electrode.

4. The semiconductor light-emitting element according to claim 3, characterized in that, The first pad electrode and the second pad electrode are arranged at intervals along a second direction; The second contact electrode has at least one first recess along the second direction; In the stacking direction of the light-emitting epitaxial layer, the first protrusion is located in the corresponding first recess, and the projection of the first buffer portion overlaps with the first recess.

5. The semiconductor light-emitting element according to claim 1, characterized in that, The material of the first buffer section is Au, Ti, Ni, Al, Ag, Cr, Pt, or Al2O. 3。 6. The semiconductor light-emitting element according to claim 1, characterized in that, The thickness of the first buffer section is between 800A and 8000A.

7. The semiconductor light-emitting element according to claim 1, characterized in that, The thickness of the second insulating layer located above the first buffer portion is between 2000A and 6000A; the thickness of the second insulating layer located below the first buffer portion is between 2000A and 6000A.

8. The semiconductor light-emitting element according to claim 1, characterized in that, The second insulating layer has a third opening and a fourth opening; The first pad electrode is electrically connected to the first contact electrode through the third opening, and the second pad electrode is electrically connected to the second contact electrode through the fourth opening; The projection of the first buffer portion in the stacking direction of the light-emitting epitaxial layer is located between the first pad electrode and the second pad electrode.

9. The semiconductor light-emitting element according to claim 8, characterized in that, The first buffer section includes a first part and a second part; The first portion extends along the first direction; the second portion extends along the second direction; In the stacking direction of the light-emitting epitaxial layer, the projection of the first portion is located between the first pad electrode and the second pad electrode, and the projection of the second portion at least covers the first opening.

10. A light-emitting device, characterized in that, Includes the semiconductor light-emitting element as described in any one of claims 1-9.

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