Beam halo detection device and method based on semiconductor sensor

Abstract

The invention discloses a beam halo detection device and method based on a semiconductor sensor. The device comprises the semiconductor sensor, a driving module, a data acquisition module and a processing module, a first end of the driving module is connected with the semiconductor sensor, a second end of the driving module is connected with a first end of the processing module, the driving module is used for moving the semiconductor sensor along a first direction to scan a beam halo, and a second end of the semiconductor sensor is connected with the data acquisition module; the semiconductor sensor is used for generating a corresponding radio frequency electric signal according to a scanning signal of the beam halo; the data acquisition module is used for receiving radio frequency electric signals and transmitting the signals to the processing module; and the processing module calculates the beam halo distribution of the beam halo according to the radio frequency electric signal. According to the beam halo detection device provided by the invention, the beam halo is detected through the semiconductor sensor so as to obtain beam halo distribution, so that the beam halo detection device not only has an enough high signal-to-noise ratio, but also can realize a measurement dynamic range greater than 106.

Description

Technical Field

[0001] The present invention relates to the technical field of particle accelerators, and in particular to a beam halo detection device and method based on semiconductor sensors. Background Art

[0002] For modern high-intensity particle accelerators, beam loss may cause serious consequences such as interruption of accelerator operation, quench of superconducting magnets and activation of beam line elements. In order to ensure the steady increase of particle accelerator power and high-quality and safe operation, beam quality and beam loss must be effectively controlled.

[0003] The occurrence of beam loss is generally due to the high-order nonlinear magnetic field, beam optical mismatch, beam grouping effect and particle scattering, which cause the action of a small number of particles to increase and exceed the lateral acceptance of the accelerator, and finally be lost in the beam pipeline. In the beam phase space, these particles with large action are far away from the beam core in at least one degree of freedom, which is usually called beam halo.

[0004] In the existing technology for measuring beam halo, a complete measurement takes more than 30 minutes, which is inefficient and has a low measurement dynamic range. Summary of the invention

[0005] The present invention provides a beam halo detection device and method based on semiconductor sensors. By using semiconductor sensors to detect beam halo, not only can the radio frequency electrical signal output by the semiconductor sensors have a sufficiently high signal-to-noise ratio, but also can achieve a signal-to-noise ratio greater than 10 6 The dynamic range of the measurement.

[0006] According to a first aspect of the present invention, there is provided a beam halo detection device based on a semiconductor sensor, comprising: a semiconductor sensor, a driving module, a data acquisition module and a processing module;

[0007] The first end of the driving module is connected to the semiconductor sensor, the second end of the driving module is connected to the first end of the processing module, and the driving module is used to move the semiconductor sensor along a first direction to scan the beam halo, and the first direction is perpendicular to the transmission direction of the beam halo;

[0008] The second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency electrical signal according to the scanning signal of the beam halo;

[0009] The second end of the data acquisition module is connected to the second end of the processing module, and the data acquisition module is used to receive the radio frequency electrical signal and transmit it to the processing module;

[0010] The processing module calculates the halo distribution of the halo according to the radio frequency electrical signal.

[0011] Optionally, a vacuum chamber, a bracket, a vacuum coaxial cable and a vacuum feedthrough are also included;

[0012] The first end and the second end of the bracket are both connected to the semiconductor sensor, the third end of the bracket is connected to the driving module, and the bracket is fixedly connected to the semiconductor sensor and drives the semiconductor sensor to scan the beam halo;

[0013] The first end of the vacuum coaxial cable is connected to the semiconductor sensor, the second end of the vacuum coaxial cable is connected to the data acquisition module through the vacuum feedthrough, and the vacuum coaxial cable is used to transmit the radio frequency electrical signal to the data acquisition module;

[0014] The semiconductor sensor, the bracket and the vacuum coaxial cable are all located in the vacuum chamber, and the vacuum feedthrough is fixed to the side wall of the vacuum chamber.

[0015] Optionally, a filtering module is also included;

[0016] The first end of the filter module is connected to the semiconductor sensor, and the second end of the filter module is connected to the data acquisition module.

[0017] Optionally, a DC bias and amplifier module are also included;

[0018] The first end of the DC bias device is connected to the semiconductor sensor, the second end of the DC bias device is connected to the filter module, and the DC bias device is used to provide a DC bias voltage to the semiconductor sensor;

[0019] The first end of the amplifier module is connected to the filter module, the second end of the amplifier module is connected to the data acquisition module, and the amplifier module is used to adjust the signal amplitude of the radio frequency electrical signal.

[0020] Optionally, it also includes a first power module and a second power module;

[0021] The first end of the first power supply module is connected to the DC bias device, the second end of the first power supply module is connected to the processing module, and the first power supply module is used to provide a working voltage for the DC bias device;

[0022] A first end of the second power module is connected to the amplifier module, a second end of the second power module is connected to the processing module, and the second power module is used to provide a working voltage for the amplifier module.

[0023] Optionally, a control module is also included;

[0024] The first end of the control module is connected to the driving module, and the second end of the control module is connected to the processing module. The control module is used to control the driving module to drive the semiconductor sensor to scan the beam halo and monitor the position information of the semiconductor sensor in real time.

[0025] Optionally, the semiconductor sensor comprises a semiconductor strip, and the width of the semiconductor strip is 0.1 mm-1 mm.

[0026] Optionally, the sampling rate of the data acquisition module is 5-10 times the bandwidth of the radio frequency electrical signal.

[0027] According to a second aspect of the present invention, a beam halo detection method based on a semiconductor sensor is provided, wherein the beam halo detection device based on a semiconductor sensor according to any one of the first aspects of the present invention is used to perform beam halo detection, and the beam halo measurement method comprises:

[0028] The semiconductor sensor is preset to measure the initial position and final position of the beam halo;

[0029] Controlling the semiconductor sensor to move to the initial position and scanning the beam halo;

[0030] collecting the radio frequency electrical signal of the semiconductor sensor;

[0031] generating a particle beam intensity corresponding to the semiconductor sensor at the initial position according to the radio frequency electrical signal;

[0032] Based on the initial position, the semiconductor sensor is controlled to perform multiple step-wise displacements along the first direction, and the step of collecting the radio frequency electrical signal of the semiconductor sensor is returned to be executed until the average value and standard deviation of the M groups of charge integrals are obtained;

[0033] The halo distribution of the halo is determined according to the average value and the standard deviation of the charge integrals of the M groups; wherein M is the number of displacements of the semiconductor sensor to the final position; and the first direction is perpendicular to the transmission direction of the halo.

[0034] Optionally, the step of generating a particle beam intensity corresponding to the semiconductor sensor at the initial position according to the radio frequency electrical signal further includes:

[0035] Repeating N times to collect M×N radio frequency electrical signals corresponding to the semiconductor sensor at M positions;

[0036] Obtaining N beam current intensities and amplifier gains corresponding to each position of the semiconductor sensor;

[0037] Preprocessing the M×N radio frequency electrical signals to generate an average value and a standard deviation of the charge integrals of the M radio frequency electrical signals; wherein N is a positive integer greater than or equal to 10;

[0038] The particle beam intensity at the semiconductor sensor position is determined according to an average value and a standard deviation of the M charge integrals.

[0039] The present invention discloses a beam halo detection device based on a semiconductor sensor, comprising: a semiconductor sensor, a driving module, a data acquisition module and a processing module; the first end of the driving module is connected to the semiconductor sensor, the second end of the driving module is connected to the first end of the processing module, the driving module is used to move the semiconductor sensor along a first direction to scan the beam halo, the first direction is perpendicular to the transmission direction of the beam halo; the second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency electrical signal according to the scanning signal of the beam halo; the second end of the data acquisition module is connected to the second end of the processing module, the data acquisition module is used to receive the radio frequency electrical signal and transmit it to the processing module; the processing module calculates the beam halo distribution of the beam halo according to the radio frequency electrical signal. The present invention provides a beam halo detection device and method based on a semiconductor sensor, by using a semiconductor sensor to detect the beam halo, not only the radio frequency electrical signal output by the semiconductor sensor has a sufficiently high signal-to-noise ratio, but also can achieve a signal-to-noise ratio greater than 10 6 The dynamic range of the measurement.

[0040] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 It is a schematic diagram of the structure of a beam halo detection device in the prior art;

[0043] Figure 2 is a schematic structural diagram of another beam halo detection device in the prior art;

[0044] Figure 3 is a schematic structural diagram of another beam halo detection device in the prior art;

[0045] Figure 4 is a schematic structural diagram of another beam halo detection device in the prior art;

[0046] Figure 5 is a schematic structural diagram of another beam halo detection device in the prior art;

[0047] Figure 6 is a structural diagram of a beam halo detection device based on a semiconductor sensor provided in an embodiment of the present invention;

[0048] Figure 7 is a flow chart of a beam halo detection method based on a semiconductor sensor provided by an embodiment of the present invention;

[0049] Figure 8 This is another flow chart of a beam halo detection method based on a semiconductor sensor provided by an embodiment of the present invention.

[0050] Fig. 9 It is a schematic diagram of test results of a beam halo detection device based on a semiconductor sensor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0051] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0052] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0053] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0054] In the quantitative study of beam halo, we can define the particles outside the beam 3σ as beam halo. At the same time, we can also divide the beam distribution into three parts: "beam core-tail-beam halo" according to the particle density, and the corresponding particle densities are 1-10 -2 , 10 -2 -10 -4 , 10 -4 -10 -6 In the research of beam halo diagnosis technology, the boundary between the beam core and the beam halo is generally blurred, and some particles with extremely low density are regarded as beam halo. It can be seen that from the different perspectives of accelerator physics and beam diagnosis, the definitions of beam halo in the literature vary, but the general consensus that can be reached is that beam halo has extremely low density, is extremely difficult to measure, and is very likely to cause beam loss.

[0055] The formation and evolution of beam halo are closely related to the accelerator beam optical design, hardware status and operation mode. The beam halo formation mechanism of each accelerator is often different. For the same accelerator, its beam halo distribution characteristics and dominant physical mechanism may also change with the operation mode. For high-intensity proton accelerators, especially large particle accelerators with megawatt beam power, it is of great significance to establish beam halo physical models through a large number of experimental measurements and carry out targeted beam loss optimization. It has become an important part of the design and commissioning of large particle accelerators such as the Large Hadron Collider (LHC) at the European Organization for Nuclear Research, the Relativistic Heavy Ion Collider (RHIC) at the Brookhaven National Laboratory in the United States, and the Japan Proton Accelerator Research Complex (J-PARC).

[0056] For the measurement of one-dimensional beam halo distribution, the internationally advanced detectors generally take the measurement dynamic range better than six orders of magnitude as their optimization goal, while the measurement dynamic range of multi-dimensional beam halo in phase space decreases by orders of magnitude as the dimension increases. In order to achieve large dynamic range and high sensitivity beam halo diagnosis, the first key scientific issue is to propose and develop advanced beam halo diagnosis methods. Even though most beam profile detectors have the potential to be upgraded to beam halo detectors, the optimal dynamic range and technical difficulty that can be achieved by different beam profile detection methods vary. An ideal beam halo detector should have the following characteristics: large detection dynamic range, high sensitivity, reliable technology and reasonable cost. Usually, direct beam halo measurement mainly includes filament scanning methods and methods based on optical imaging.

[0057] Prior art 1.

[0058] Wire scanning detectors have the advantages of simple structure, high sensitivity and reliable performance, and are widely used in beam profile measurement. Therefore, many laboratories at home and abroad have carried out beam halo diagnosis research based on wire scanning detectors. For relativistic particle beams, scintillators and photomultiplier tubes (PMTs) are usually used to measure the secondary particle intensity downstream of the wire scanning detector and give the lateral distribution of the beam. A simple wire scanning beam halo detector scheme is to place a scintillator and PMT assembly downstream of the wire target (1 meter to 5 meters), and use the characteristic that the PMT gain is positively correlated with the operating voltage. By controlling the PMT bias voltage, the sensitivity of the scintillator detector is optimized to ensure that the PMT output signal-to-noise ratio is large enough under different secondary particle intensities and to avoid saturation of the PMT output signal. The measurement dynamic range of this scheme is about 10 5 , Figure 1 is a schematic diagram of the structure of a beam halo detection device in the prior art, refer to Figure 1 , mainly including: a filament 101, a wire target bracket 102, a wire target driver 103, a scintillator 104, a photomultiplier tube 105, an electrical signal conditioning module 106, a data acquisition module 107 and a control module 108.

[0059] Prior art 2.

[0060] In order to overcome the influence of background secondary particles on the lower limit of the measurement dynamic range, A. Freyberger et al. used multiple secondary particle probes (counting mode) with lateral symmetry distribution and coincidence technology for signal identification on the Continuous Electron Beam Accelerator Facility (CEBAF) device, and increased the measurement dynamic range to about 10 8 , Figure 2 is another schematic diagram of the structure of a beam halo detection device in the prior art. Figure 2 As shown, it mainly includes: a driver 201, a wire target support 202, a filament 203, a vacuum chamber 204, a secondary particle probe 205, an electrical signal conditioning module 206, a data acquisition and compliance module 207 and a control module 208.

[0061] Prior art 3.

[0062] In 2016, Voroshilov and others from the Budker Institute of Nuclear Physics (BINP) conducted an exploratory study on fiber-optic scanning beam halo detectors. During the experiment, a 1mm diameter optical fiber was used to interact with the beam, and then the PMT probes at both ends of the optical fiber were used to collect the Cherenkov radiation light generated by the charged particles passing through the optical fiber. The beam halo was measured based on the change in the number of photons at different optical fiber positions. In the experiment, only the halo part far away from the beam core was observed, and the measurement dynamic range has reached 10 4 . Figure 3 is another schematic diagram of the structure of a beam halo detection device in the prior art. Figure 3 As shown, it mainly includes: a driving motor 301, an optical fiber bracket 302, an optical fiber 303, a vacuum chamber 304, a photon probe 305, a current amplifier 306, a data acquisition module 307 and a control module 308.

[0063] Prior art 4.

[0064] The dynamic range of the halo diagnosis method based on optical imaging is generally limited by the number of bits of the camera, the vignetting effect on the pixel array, and the optical diffraction effect. In order to avoid the vignetting effect caused by the bright beam core part scattering or coupling to the surrounding pixels, the most direct solution is to image the extremely low-density halo particles while effectively shielding the light from the beam core part, which gave rise to the halo measurement method based on the digital microlens array (DMD) and the coronagraph.

[0065] A digital micromirror device (DMD) precisely modulates the image on the mirror array by programming and controlling the deflection angle of each microlens. Usually, the deflection angle of the microlens of a DMD is 0 degree and ±12 degrees. It is widely used in optical projection and laser shaping.

[0066] Figure 4 is another schematic diagram of the structure of a beam halo detection device in the prior art. Figure 4As shown, it mainly includes: a fluorescent screen or a transition radiation target 401, an optical lens module 402, a DMD module 403, a filter module 404, a digital camera 405 and a light collector 406. Its working principle is as follows: the forward light (which can be fluorescence, transition radiation light, diffraction radiation light, etc.) generated when the beam bombards the fluorescent screen or the transition radiation target enters the optical lens module after passing through the vacuum observation window, and the regulated light beam is irradiated on the DMD surface. The deflection state of the DMD microlens is adjusted so that when the deflection angle is 0 degrees, the reflected light enters the sensor of the digital camera, and when the deflection angle is -12 degrees or +12 degrees, the reflected light enters the light collector. Among them, the optical lens module is mainly used to adjust the size, scaling and aberration of the light beam, and generally requires the light beam to be focused on the sensor surface of the digital camera. During beam vignetting imaging, the deflection angle of each microlens is regulated by DMD coding, so that the light from the beam vignetting part is reflected to the camera sensor surface, while the light from the beam core part is reflected to the light collector, thereby avoiding the influence of the bright beam core part on beam vignetting imaging (vignetting effect and optical diffraction effect). Due to the small number of beam vignetting particles, it is necessary to reduce the light attenuation of the filter module and increase the camera gain when imaging the beam vignetting part to ensure that the signal-to-noise ratio of the camera sensor output signal is within a reasonable range (generally greater than 5).

[0067] Prior art 5.

[0068] Figure 5 is another schematic diagram of the structure of a beam halo detection device in the prior art, referring to Figure 5 A coronagraph is an astronomical telescope structure that uses a light shield structure to shield the central bright spot and observe weak light signals such as the surrounding corona, prominences and exoplanets. Figure 5As shown, it mainly includes: a fluorescent screen or a transition radiation target 501, an objective lens module 502, an objective lens frame 503, a partition module 504, a light mask 505, a field lens module 506, an optical partition (Lyot ​​stop) 507, a relay lens 508, a filter 509, and a digital camera 510. Among them, the fluorescent screen or the transition radiation target is used to generate radiation light 501 related to the beam distribution, the objective lens module can be a high-purity single lens or a cemented lens 502, the partition module 504 is generally a combination of closely arranged light baffles, used to suppress reflected and scattered light, the light mask 505 and the field lens module 506 are located on the image plane of the objective lens module, the light mask 505 is used to shield the bright light of the beam core part and form an "annular solar eclipse" image, the field lens module 506 is used to make the objective lens aperture at the downstream optical partition 507 present a real image, the aperture of the optical partition 507 is slightly smaller than the image of the objective lens aperture, and can shield the relatively bright edge diffraction light, the relay lens 508 is used to present the shielded image on the focal plane, the filter 509 is used to adjust the light flux, the charge-coupled device (CCD) or complementary metal-oxide-semiconductor sensor (Complementary Metal-Oxide-Semiconductor) of the digital camera 510 The sensor (CMOS) is located on the focal plane of the relay lens 508 for image acquisition. By optimizing the size of the optical baffle, the diffraction light caused by the objective lens aperture can be effectively suppressed to a level of 10% of the normal level. -6 , thereby increasing the dynamic range of beam halo measurement to 10 5 Magnitude.

[0069] There are still many technical problems in the existing technology:

[0070] 1. The beam halo measurement method using filament scanning and scintillator detection of secondary particles has a lower limit of measurement resolution that mainly depends on the background noise level, that is, the intensity of secondary particles generated in the vacuum pipe by the beam loss near the scintillator. Limited by the intensity and fluctuation of secondary particles near the beam line of high-energy electron accelerators, the dynamic range of this method for measuring beam halo is only 10 at most. 4 In addition, in order to improve the resolution of the beam halo distribution measurement, it is required to reduce the wire scanning step as much as possible. A complete beam halo measurement takes 30 minutes to 60 minutes, which is inefficient.

[0071] 2. The wire scanning halo detection method using multi-stage particle probe coincidence counting can effectively improve the measurement dynamic range and sensitivity. However, the structure of the multi-channel signal coincidence module and the ionizing radiation shielding are complex and the cost is higher than the detector itself, which is not suitable for the multi-site halo measurement needs of large-scale high-current particle accelerators. In addition, in order to ensure the accuracy of the measurement, it is required to perform repeated data collection at each scanning position to reduce statistical errors. A complete halo measurement takes a long time and is inefficient.

[0072] 3. Fiber scanning halo is suitable for high-energy electron accelerators with large lateral dimensions. Its application in high-current high-energy proton accelerators is limited by factors such as fiber thermal melting, the requirement that the speed of charged particles is close to the speed of light, and radiation damage:

[0073] (1) The fiber diameter used in the existing fiber scanning beam halo detector is 1 mm. Assuming the beam current intensity is 10 mA, the pulse width is 100 μs, and the transverse root mean square size is 2 mm (Gaussian distribution), the number of single pulse particles bombarding the fiber when it passes through the center of the beam is greater than 10 12 , the local temperature rise caused by energy deposition exceeds the melting point of the optical fiber material, which will cause the optical fiber to fuse;

[0074] (2) The premise of Cherenkov radiation emission is that the speed of charged particles is greater than the propagation speed of light in the optical fiber. Assuming that the refractive index of the optical fiber medium is 1.5, the propagation speed of light in the medium is c0 / 1.5, and the corresponding lower limit of the proton beam energy is 300 MeV. Therefore, it cannot be used in medium and low energy proton and heavy ion accelerators.

[0075] (3) According to foreign laboratory test reports, when the total radiation dose reaches 100 kGy, the optical properties of the optical fiber will change significantly after being damaged by radiation from the direct action of the high-current proton beam.

[0076] 4. In the process of halo measurement using DMD optical spatial modulation, it is necessary to encode the DMD according to the beam shape. Usually, multiple concentric ring shapes are used to image each area from the center of the beam to the periphery, and the light intensity of each ring area is similar. In order to achieve complete halo distribution measurement, the number of ring areas of different shapes is about 10-20. Therefore, the operation steps of this method are complicated and it is not suitable for direct halo measurement.

[0077] 5. The coronagraph is a sophisticated astronomical telescope with a complex structure. In order to suppress the stray light introduced by reflection and diffraction effects, the processing accuracy, roughness and adjustment accuracy of each optical element are extremely high. The whole system occupies a large space, is difficult to build and has a high cost.

[0078] Aiming at the measurement of particle accelerator halo in a strong radiation environment, the present invention proposes a semiconductor strip-type halo detection device and method. The basic principle is: with the development of chip technology and semiconductor precision processing technology, semiconductor sensors have been widely used in particle physics, nuclear physics and radiation device research. Taking the proton beam as an example, the protons first interact with the nuclei or extranuclear electrons of the semiconductor material, deposit a part of the energy along the flight path and convert it into ionization energy, and generate a large number of electron-hole pairs, and the remaining energy is converted into phonons (lattice vibrations) and dissipated. Compared with other radiation sensors, semiconductor sensors have the advantages of high gain, high integration and high time resolution, and gradually developed a variety of new radiation-resistant semiconductor sensor materials. For example, diamond sensors and low-gain avalanche silicon sensors can withstand about 10 16 n eq / cm 2 The equivalent neutron flux of is irradiated, which is suitable for low-intensity beam measurement in strong radiation extreme environment. When the semiconductor sensor is working, the semiconductor layer forms an electrostatic field under the bias voltage on both sides of the sensor (front and back). When the charged particles bombard the semiconductor sensor, part of the energy is lost in the semiconductor layer and a large number of electron-hole pairs are generated. The electron-hole pairs move to both sides of the sensor under the action of the electrostatic field to form a current signal output. The output current signal enters the data acquisition system after being modulated by the analog preamplifier. Usually, the designed semiconductor strip width is smaller than the root mean square size of the beam. The relative position of the semiconductor strip and the center of the beam is changed by a fixed step scanning method. The electrical signal output of the semiconductor strip sensor is recorded at each step. The beam halo distribution can be given according to the relative position and the corresponding output signal integral intensity change each time. Thanks to the high gain characteristics of semiconductor sensors, this type of detector generally has single-particle sensitivity; but in the complex electromagnetic environment of particle accelerators, the lower limit of the sensitivity of beam halo measurement depends on factors such as the spatial electric field coupling of the beam and the electromagnetic interference of the spatial coupling of RF components to the signal collection circuit, and the intensity fluctuation of background secondary particles in the strong radiation environment.

[0079] It can be seen from the above that in the prior art, there are still many technical problems that have not been solved. The embodiment of the present invention provides a beam halo detection device based on a semiconductor sensor. Figure 6 is a structural diagram of a beam halo detection device based on a semiconductor sensor provided by an embodiment of the present invention, with reference to Figure 6The semiconductor sensor-based beam halo detection device provided by the present invention includes: a semiconductor sensor 1, a driving module 2, a data acquisition module 3 and a processing module 4; the first end of the driving module 2 is connected to the semiconductor sensor 1, the second end of the driving module 2 is connected to the first end of the processing module 4, the driving module 2 is used to move the semiconductor sensor 1 along a first direction X to scan the beam halo A, and the first direction X is perpendicular to the transmission direction S of the beam halo A; the second end of the semiconductor sensor 1 is connected to the data acquisition module 3; the semiconductor sensor 1 is used to generate a corresponding radio frequency electrical signal according to the scanning signal of the beam halo A; the second end of the data acquisition module 3 is connected to the second end of the processing module 4, the data acquisition module 3 is used to receive the radio frequency electrical signal and transmit it to the processing module 4; the processing module 4 calculates the beam halo distribution of the beam halo A according to the radio frequency electrical signal.

[0080] Among them, the semiconductor sensor 1 is a sensor based on semiconductor materials, which can convert the distribution information of charged particle beam into analog electrical signals. The semiconductor sensor 1 also includes a semiconductor strip 11, which is a slender semiconductor material, usually made of diamond, silicon carbide or low-gain avalanche silicon sensor.

[0081] Specifically, a beam halo detection device based on a semiconductor sensor provided in an embodiment of the present invention includes: a semiconductor sensor 1, a driving module 2, a data acquisition module 3 and a processing module 4, wherein the first end of the driving module 2 is connected to the semiconductor sensor 1, and the second end of the driving module 2 is connected to the processing module 4, the beam halo A moves along the S direction (i.e., the transmission direction of the beam halo A), the driving module 2 controls the semiconductor sensor 1 and links the semiconductor strip 11 to extend into and withdraw from the beam track (i.e., displacement along the first direction X) to realize scanning of the beam halo A, and at the same time, precisely adjusts the positions of the semiconductor sensor 1 and the semiconductor strip 11 relative to the center of the beam. Exemplarily, the driving module 2 can be a displacement stage assembly composed of a linear sliding stage; the second end of the semiconductor sensor 1 is connected to the data acquisition module 3, and after the driving module 2 controls the semiconductor sensor 1 to extend into and withdraw from the beam track to scan the beam halo A, the semiconductor sensor 1 generates a corresponding radio frequency electrical signal according to the scanning signal of the beam halo A (i.e., the distribution information of the charged particles in the beam), and transmits the radio frequency electrical signal to the data acquisition module 3, which can be, for example, a ceramic printed circuit board (Printed Circuit The semiconductor sensor on the printed circuit board (PCB) is used to establish an electrostatic field in the semiconductor for collecting electron-hole pairs. A layer of metal is usually plated on the surface of the sensor (front side, i.e., the particle incident side) with a thickness of about 10nm-100nm. Usually, there is an analog circuit (capacitor, inductor) on the back of the circuit board to maintain the electron-hole collection bias under large signal conditions to avoid the saturation effect of the electrical signal output. In order to avoid the crosstalk of the multi-semiconductor strip sensor signals caused by particle scattering and electrical signal coupling, a single semiconductor strip sensor design can be selected; the first end of the data acquisition module 3 is connected to the semiconductor sensor 1, and the second end of the data acquisition module 3 is connected to the processing module 4. After the data acquisition module 3 receives the radio frequency electrical signal, the radio frequency electrical signal is transmitted to the processing module 4. Exemplarily, the data acquisition module 3 can be a high-speed digitizer, a real-time spectrum analyzer, etc., all of which have the characteristics of high sampling rate and high precision. The processing module 4 calculates the beam halo distribution of the beam halo A according to the radio frequency electrical signal emitted by the semiconductor sensor 1. Exemplarily, the processing module 4 can be a data server, or a personal computer or a small server, which is used for motor control, DC bias configuration, data storage and preprocessing, equipment status information monitoring, etc.

[0082] Optionally, the semiconductor sensor 1 includes a semiconductor strip 11, and the width of the semiconductor strip 11 is 0.1 mm-1 mm.

[0083] Specifically, the semiconductor sensor 1 includes a semiconductor strip 11. In the embodiment of the present invention, the width of the semiconductor strip 11 is required to be much smaller than the root mean square size of the beam. Considering the current microelectronic precision processing technology and PCB board welding technology, the width of the semiconductor strip 11 can be in the order of 0.1mm-1mm. Therefore, the embodiment of the present invention is suitable for beam halo measurement with a beam root mean square size of millimeters.

[0084] Optionally, the sampling rate of the data acquisition module 3 is 5-10 times the bandwidth of the radio frequency electrical signal.

[0085] Specifically, in the embodiment of the present invention, the sampling rate of the data acquisition module 3 is set to be 5-10 times the bandwidth of the radio frequency electrical signal to ensure that a complete signal waveform is recorded.

[0086] The semiconductor sensor-based beam halo detection device provided by the embodiment of the present invention detects beam halo by using the semiconductor sensor, which not only makes the radio frequency electrical signal output by the semiconductor sensor have a sufficiently high signal-to-noise ratio, but also can achieve a signal-to-noise ratio greater than 10 6 The dynamic range of the measurement.

[0087] Optionally, the semiconductor sensor-based beam halo detection device provided in an embodiment of the present invention also includes a vacuum chamber 5, a bracket 6, a vacuum coaxial cable 7 and a vacuum feedthrough 8; the first end and the second end of the bracket 6 are both connected to the semiconductor sensor 1, the third end of the bracket 6 is connected to the driving module 2, the bracket 6 is fixedly connected to the semiconductor sensor 1 and drives the semiconductor sensor 1 to scan the beam halo A; the first end of the vacuum coaxial cable 7 is connected to the semiconductor sensor 1, the second end of the vacuum coaxial cable 7 is connected to the data acquisition module 3 through the vacuum feedthrough 8, and the vacuum coaxial cable 7 is used to transmit the radio frequency electrical signal to the data acquisition module 3; the semiconductor sensor 1, the bracket 6 and the vacuum coaxial cable 7 are all located in the vacuum chamber 5, and the vacuum feedthrough 8 is fixed to the side wall of the vacuum chamber 5.

[0088] The vacuum chamber 5 is a closed container for conducting experiments or operations in a vacuum environment. The internal air pressure is reduced to a level far below the atmospheric pressure through a vacuum pumping system. The vacuum coaxial cable 7 is a specially designed coaxial cable for transmitting high-frequency signals (such as radio frequency electrical signals) in a vacuum environment. For example, it can be a special cable with polyimide (Kapton) as the insulating material, and also includes a connector ( Figure 1 (not shown), illustratively, the vacuum coaxial cable 7 is used in conjunction with a connector, and the connector is an MMCX plug-in structure, so as to realize the transmission of the radio frequency electrical signal emitted by the semiconductor sensor 1. The vacuum feedthrough 8 is mainly used to transmit the signal in the vacuum chamber 5 while maintaining the sealing of the vacuum. The vacuum feedthrough 8 provided in the embodiment of the present invention can be a plurality of independent single-core feedthroughs or multi-core feedthroughs.

[0089] Specifically, the first end and the second end of the bracket 6 are connected to the semiconductor sensor 1, and the third end of the bracket 6 is connected to the driving module 2. The bracket 6 is fixedly connected to the semiconductor sensor 1 to clamp the semiconductor sensor 1 and drive the semiconductor sensor 1 to scan the beam halo A. Exemplarily, the bracket 6 can be a structure made of aluminum alloy or stainless steel. The first end of the vacuum coaxial cable 7 is connected to the semiconductor sensor 1, and the second end of the vacuum coaxial cable 7 is connected to the data acquisition module 3 through the vacuum feedthrough 8. The vacuum coaxial cable 7 is used to transmit the radio frequency electrical signal generated by the semiconductor sensor 1 according to the scanning signal of the beam halo A to the data acquisition module 3. The semiconductor sensor 1, the bracket 6 and the vacuum coaxial cable 7 are all located in the vacuum chamber 5. Exemplarily, the vacuum chamber 5 can be a chamber formed by welding stainless steel or titanium alloy, which is used to isolate the beam pipeline vacuum and the atmospheric environment, and the vacuum feedthrough 8 is fixed to the side wall of the vacuum chamber 5.

[0090] Optionally, the semiconductor sensor-based beam halo detection device provided in an embodiment of the present invention further includes a filter module 9 ; a first end of the filter module 9 is connected to the semiconductor sensor 1 , and a second end of the filter module 9 is connected to the data acquisition module 3 .

[0091] Specifically, the first end of the filter module 9 is connected to the semiconductor sensor 1, and the second end of the filter module 9 is connected to the data acquisition module 3. The filter module 9 is used to suppress the radio frequency interference signal in the radio frequency electrical signal generated by the semiconductor sensor 1, and then transmit it to the data acquisition module 3. Exemplarily, the filter module 9 can be a low-pass filter, a band-pass filter or a high-pass filter, etc.

[0092] Optionally, it also includes a DC bias device 10 and an amplifier module 11; the first end of the DC bias device 10 is connected to the semiconductor sensor 1, the second end of the DC bias device 10 is connected to the filter module 9, and the DC bias device 10 is used to provide a DC bias voltage to the semiconductor sensor 1; the first end of the amplifier module 11 is connected to the filter module 9, the second end of the amplifier module 11 is connected to the data acquisition module 3, and the amplifier module 11 is used to adjust the signal amplitude of the radio frequency electrical signal.

[0093] Among them, the DC bias device 10 realizes the superposition transmission of DC power supply and high-frequency signal (RF electrical signal) through the synergistic effect of inductance and capacitance, and adds a DC bias voltage to prevent the electrical signal of the RF port from leaking into the power supply system. The amplifier module 11 is used to achieve the gain of the RF electrical signal and modulate the RF electrical signal output by the semiconductor sensor 1 to match the signal input range of the data acquisition module 3.

[0094] Specifically, a first end of the DC bias device 10 is connected to the semiconductor sensor 1, and a second end of the DC bias device 10 is connected to the filter module 9. The DC bias device 10 not only provides a DC bias voltage to the RF electrical signal output by the semiconductor sensor 1, but also prevents the RF electrical signal of the RF port from leaking to the power supply system.

[0095] The first end of the amplifier module 11 is connected to the filter module 9, and the second end of the amplifier module 11 is connected to the data acquisition module 3. The amplifier module 11 is used to adjust the amplitude of the radio frequency electrical signal output by the semiconductor sensor 1 to match the signal input range of the data acquisition module 3. Exemplarily, the amplifier module 11 can be a variable gain amplifier circuit module.

[0096] Optionally, the beam halo detection device based on semiconductor sensors provided in an embodiment of the present invention also includes a first power supply module 12 and a second power supply module 13; the first end of the first power supply module 12 is connected to the DC bias device 10, the second end of the first power supply module 12 is connected to the processing module 4, and the first power supply module 12 is used to provide an operating voltage for the DC bias device 10; the first end of the second power supply module 13 is connected to the amplifier module 11, the second end of the second power supply module 13 is connected to the processing module 4, and the second power supply module 13 is used to provide an operating voltage for the amplifier module 11.

[0097] Specifically, a first end of the first power module 12 is connected to the DC bias device 10, and a second end of the first power module 12 is connected to the processing module 4. The first power module 12 is used to provide a working voltage for the DC bias device 10. Exemplarily, the first power module 12 may be a programmable DC power module.

[0098] The first end of the second power module 13 is connected to the amplifier module 11, and the second end of the second power module 13 is connected to the processing module 4. The second power module 13 is used to provide an operating voltage for the amplifier module 11. Exemplarily, the second power module 13 can be a programmable DC power module.

[0099] Optionally, a control module 14 is also included; the first end of the control module 14 is connected to the driving module 2, and the second end of the control module 14 is connected to the processing module 4. The control module 14 is used to control the driving module 2 to drive the semiconductor sensor 1 to scan the beam halo A, and monitor the position information of the semiconductor sensor 1 in real time.

[0100] Specifically, the semiconductor sensor-based beam halo detection device provided in an embodiment of the present invention also includes a control module 14. The first end of the control module 14 is connected to the driving module 2, and the second end of the control module 14 is connected to the processing module 4. The control module 14 is used to issue control instructions to the driving module 2 to drive the semiconductor sensor 1 to extend into and out of the beam track to scan the beam halo A. Exemplarily, the control module 14 can be a programmable logic controller (PLC) module component, and monitor the position information of the semiconductor sensor 1 in real time.

[0101] Optionally, the semiconductor sensor-based beam halo detection device provided in an embodiment of the present invention further includes a signal transmission cable 15 for realizing radio frequency electrical signal transmission between the semiconductor sensor 1 and the data acquisition module 3, which can be, for example, a coaxial cable or a triaxial cable.

[0102] The beam halo detection device based on semiconductor sensors provided in the embodiments of the present invention has the following requirements and characteristics:

[0103] 1. The beam of the particle accelerator flies in an ultra-high vacuum environment. The outgassing rate of the components in the vacuum chamber 5 (including PCB boards, connectors and signal transmission cables 15) must meet the requirements of the ultra-high vacuum environment. Usually, the thermal outgassing rate is required to be less than 1×10 -11 Pa×m 3 / (s×cm 2 ).

[0104] 2. The PCB board where the semiconductor sensor 1 is located needs to be equipped with a charging capacitor circuit to quickly charge the semiconductor sensor 1 after the sensor signal is output to avoid the DC bias drop and the decrease in the electron hole collection efficiency. The charging capacitor value depends on the expected sensor output signal charge integration strength and the DC bias drop tolerance. Assuming that the maximum signal integration charge is 500nC and the acceptable collection bias drop is 5V, the minimum charging capacitor value is 100nF.

[0105] 3. When using semiconductor sensors to measure beam core distribution, the high local particle density at the center of the beam may cause the electron-hole collection efficiency in the semiconductor sensor to decrease, thereby reducing the charge integral value of the output electrical signal and causing the measured beam core distribution to be distorted (generally manifested as a widening of the beam core distribution). At this time, it can be suppressed by increasing the DC bias voltage applied to the semiconductor sensor, but the maximum bias voltage value must be lower than the breakdown voltage.

[0106] 4. The rise time of the output electrical signal of the semiconductor sensor 1 is greater than the bunch length and the response time of the sensor. The bunch length of a modern particle accelerator may be in the order of femtoseconds to nanoseconds; the signal response time of the semiconductor sensor 1 is closely related to the electron-hole pair migration rate and the sensor thickness, and the response time of diamond and low-gain avalanche silicon sensors may be less than 1 nanosecond. Therefore, the bandwidth of the vacuum coaxial cable 7 and connector, vacuum feedthrough 8, signal transmission cable 15, DC bias device 10, amplifier module 11 and data acquisition module 3 needs to be determined according to the expected signal rise time, which usually needs to reach the GHz level.

[0107] 5. To avoid radio frequency interference caused by high-power radio frequency devices of the particle accelerator, the signal transmission cable 15 should have a sufficiently large electromagnetic shielding effectiveness (greater than 90dB).

[0108] 6. The vacuum coaxial cable 7, vacuum feedthrough 8 and signal transmission cable 15 need to maintain 50 ohm impedance matching to avoid signal distortion and interference due to electrical signal reflection.

[0109] 7. It is necessary to pre-calibrate the semiconductor sensor 1 and the position information of the drive motor when it coincides with the geometric center of the beam pipe.

[0110] According to the same inventive concept, Figure 7 is a flow chart of a beam halo detection method based on a semiconductor sensor provided by an embodiment of the present invention, with reference to Figure 7 The embodiment of the present invention provides a beam halo detection method based on a semiconductor sensor, and uses any of the beam halo detection devices based on a semiconductor sensor in the above-mentioned invention embodiments to perform beam halo detection. The beam halo measurement method includes:

[0111] S101, pre-setting the initial position and final position of the semiconductor sensor to measure the beam halo.

[0112] Specifically, the initial position X of the semiconductor sensor is pre-set. min and the final position X max According to the sensitivity and linearity characteristics of the semiconductor sensor and the size of the beam halo, the possible coverage area of ​​the beam halo can be determined through numerical simulation to achieve scanning of the beam halo.

[0113] Optionally, before step S101, the method further includes:

[0114] The DC bias voltage added by the first power module to the DC bias device may be set to 100V-500V; the output voltage added by the second power module to the amplifier module may be set to 12V.

[0115] S102, controlling the semiconductor sensor to move to an initial position and scanning the beam halo.

[0116] Specifically, the control module sends a movement instruction to the drive module, and the drive module controls the semiconductor sensor and the bracket to control the semiconductor sensor to move to the initial position X min , and scan the beam halo.

[0117] Optionally, before moving the semiconductor sensor to the initial position X min Finally, adjust the signal amplifier gain to ensure that the signal amplitude input to the data acquisition module is within an acceptable range.

[0118] S103, collecting radio frequency electrical signals from semiconductor sensors.

[0119] Specifically, the semiconductor sensor is at the initial position X min The beam halo is scanned and a corresponding radio frequency electrical signal is generated. The data acquisition module collects the radio frequency electrical signal output by the semiconductor sensor.

[0120] S104, generating a particle beam intensity corresponding to the semiconductor sensor at the initial position according to the radio frequency electrical signal.

[0121] Specifically, in the above step S102, the semiconductor sensor is moved to the initial position by the driving module, and the radio frequency electrical signal of the semiconductor sensor at the initial position is collected, and the particle beam intensity corresponding to the semiconductor sensor at the initial position is generated according to the radio frequency electrical signal. S105, based on the initial position, the semiconductor sensor is controlled to perform multiple step-by-step displacements along the first direction, and the step of collecting the radio frequency electrical signal of the semiconductor sensor is returned until the average value and standard deviation of the M groups of charge integrals are obtained.

[0122] Specifically, the driving module controls the semiconductor sensor to perform multiple step-by-step displacements along the first direction X starting from the initial position to realize scanning of the beam halo, and collects the beam current intensity and amplifier gain corresponding to each moving position in turn through the data acquisition module, normalizes the beam current intensity and amplifier gain and calculates the corresponding charge integral average value and standard deviation, calculates M groups of charge integral average values ​​and M groups of standard deviations according to M groups of beam current intensities and M groups of amplifier gains, wherein M is the number of displacements of the semiconductor sensor to the final position; the first direction is perpendicular to the transmission direction of the beam halo, exemplarily, when M is 5, that is, the semiconductor sensor is displaced a total of 5 times from the initial position to the final position, that is, the average value and standard deviation of the charge integral are collected 5 times.

[0123] S106. Determine the beam halo distribution according to the average value and standard deviation of the charge integrals of the M groups.

[0124] Specifically, the halo distribution of the beam is determined according to multiple groups of charge integral average values ​​and multiple groups of standard deviations collected in step S105. Exemplarily, the halo distribution of the beam is determined according to the average value and standard of 5 charge integrals collected in the above step S105.

[0125] A beam halo detection method based on a semiconductor sensor provided in an embodiment of the present invention can achieve the same technical effect as a beam halo detection device based on a semiconductor sensor provided in the above-mentioned embodiment of the invention, which will not be described in detail here.

[0126] Optional, Figure 8 is another flow chart of a beam halo detection method based on a semiconductor sensor provided by an embodiment of the present invention, with reference to Figure 8 , generating corresponding beam current intensity and amplifier gain according to the radio frequency electrical signal, and also including:

[0127] S201, pre-setting the initial position and final position of the semiconductor sensor to measure the beam halo.

[0128] S202, controlling the semiconductor sensor to move to an initial position and scanning the beam halo.

[0129] S203, collecting radio frequency electrical signals from semiconductor sensors.

[0130] S204 , repeatedly collect M×N radio frequency electrical signals corresponding to the semiconductor sensors at M positions N times.

[0131] Specifically, in order to reduce the statistical error in the measurement process, in an embodiment of the present invention, the radio frequency electrical signal is repeatedly collected for each displacement of the semiconductor sensor, that is, the M×N radio frequency electrical signals corresponding to the semiconductor sensor at M positions are collected N times, wherein N is recommended to be a positive integer greater than or equal to 10, and N can be adjusted according to actual needs, and the embodiment of the present invention does not impose any restrictions on this.

[0132] S205 , obtaining N beam current intensities and amplifier gains corresponding to the semiconductor sensor at each position.

[0133] Specifically, N beam current intensities and amplifier gains corresponding to the semiconductor sensor at each position are obtained. For example, the semiconductor sensor is displaced 5 times from the initial position to the final position, that is, M is 5. Assuming that the collection is repeated 10 times, that is, N is 10, 10 beam current intensities and amplifier gains corresponding to the semiconductor sensor at five positions are obtained.

[0134] S206 , pre-processing the M×N radio frequency electrical signals to generate average values ​​and standard deviations of charge integrations of the M radio frequency electrical signals.

[0135] Specifically, preprocessing is performed on the M×N RF electrical signals acquired in step S204 to generate an average value and a standard deviation of the charge integration of the M RF electrical signals, wherein the preprocessing includes normalizing the M×N RF electrical signals.

[0136] S207 , determining the particle beam intensity at each semiconductor sensor position according to the average value and standard deviation of the M charge integrations.

[0137] Specifically, the particle beam intensity of the semiconductor sensor at M positions is determined according to the average value and standard deviation of the charge integrals of the M radio frequency electrical signals calculated in the above step S205.

[0138] Optionally, in the above steps S205 to S207, the particle beam intensities of the semiconductor sensors at M positions are determined to obtain beam halo distribution information.

[0139] Optionally, after obtaining the distribution information of the beam halo, the following is also included:

[0140] The semiconductor sensor is placed in the original position, that is, the rear limit position of the control module, through the driving module.

[0141] The embodiment of the present invention provides a semiconductor sensor-based beam halo detection device and method that can achieve the following technical effects:

[0142] 1. Since the ionization energy of semiconductor materials is low (for example, the ionization energy of silicon and diamond is 3.64eV and 13.6eV respectively), and the energy deposition of high-energy charged particles in the sensor is generally high (keV-MeV level), the number of electron-hole pairs generated may be 3-4 orders of magnitude higher than the number of incident charged particles. Assuming that the collection efficiency of electron-hole pairs is 10% to 100%, the signal gain may be 100-10000 times; in addition, the signal gain generated by the avalanche effect of low-gain avalanche silicon sensors is 10-50 times. Therefore, the output signal of the semiconductor sensor has a sufficiently high signal-to-noise ratio, and the detection background noise mainly comes from the electromagnetic interference in the signal circuit.

[0143] 2. Experiments conducted on an electron accelerator with a beam energy of 1.3 GeV show that under the conditions of a bunch charge of 1.1 nC and a beam RMS size of about 2 mm, the dynamic range of the one-dimensional beam halo distribution measured by a single-crystal diamond strip sensor with a width of 0.1 mm, a thickness of 0.5 mm and a length of 10 mm is greater than 6 orders of magnitude. Fig. 9 is a schematic diagram of test results of a beam halo detection device based on a semiconductor sensor provided by an embodiment of the present invention, such as Fig. 9As shown, the experimental measurement sensitivity is about 100 electrons, and the background noise mainly comes from the radiation field of the beam itself and the electromagnetic field excited by the interaction between the beam and the irregular inner wall of the vacuum chamber, which is coupled to the output electrical signal circuit of the diamond sensor.

[0144] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A beam halo detection device based on semiconductor sensors, characterized in that: include: Semiconductor sensors, drive modules, data acquisition modules and processing modules; The first end of the driving module is connected to the semiconductor sensor, the second end of the driving module is connected to the first end of the processing module, and the driving module is used to move the semiconductor sensor along a first direction to scan the beam halo, and the first direction is perpendicular to the transmission direction of the beam halo; The second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency electrical signal according to the scanning signal of the beam halo; The second end of the data acquisition module is connected to the second end of the processing module, and the data acquisition module is used to receive the radio frequency electrical signal and transmit it to the processing module; The processing module calculates the halo distribution of the halo according to the radio frequency electrical signal.

2. The beam halo detection device based on semiconductor sensor according to claim 1, characterized in that: Also included are a vacuum chamber, a bracket, a vacuum coaxial cable, and a vacuum feedthrough; The first end and the second end of the bracket are both connected to the semiconductor sensor, the third end of the bracket is connected to the driving module, and the bracket is fixedly connected to the semiconductor sensor and drives the semiconductor sensor to scan the beam halo; The first end of the vacuum coaxial cable is connected to the semiconductor sensor, the second end of the vacuum coaxial cable is connected to the data acquisition module through the vacuum feedthrough, and the vacuum coaxial cable is used to transmit the radio frequency electrical signal to the data acquisition module; The semiconductor sensor, the bracket and the vacuum coaxial cable are all located in the vacuum chamber, and the vacuum feedthrough is fixed to the side wall of the vacuum chamber.

3. The beam halo detection device based on semiconductor sensor according to claim 1, characterized in that: Also includes a filtering module; The first end of the filter module is connected to the semiconductor sensor, and the second end of the filter module is connected to the data acquisition module.

4. The beam halo detection device based on semiconductor sensor according to claim 3, characterized in that: Also included are DC bias and amplifier modules; The first end of the DC bias device is connected to the semiconductor sensor, the second end of the DC bias device is connected to the filter module, and the DC bias device is used to provide a DC bias voltage to the semiconductor sensor; The first end of the amplifier module is connected to the filter module, the second end of the amplifier module is connected to the data acquisition module, and the amplifier module is used to adjust the signal amplitude of the radio frequency electrical signal.

5. The beam halo detection device based on semiconductor sensor according to claim 4, characterized in that: Also includes a first power module and a second power module; The first end of the first power supply module is connected to the DC bias device, the second end of the first power supply module is connected to the processing module, and the first power supply module is used to provide a working voltage for the DC bias device; A first end of the second power module is connected to the amplifier module, a second end of the second power module is connected to the processing module, and the second power module is used to provide a working voltage for the amplifier module.

6. The beam halo detection device based on semiconductor sensor according to claim 1, characterized in that: Also includes a control module; The first end of the control module is connected to the driving module, and the second end of the control module is connected to the processing module. The control module is used to control the driving module to drive the semiconductor sensor to scan the beam halo and monitor the position information of the semiconductor sensor in real time.

7. The beam halo detection device based on semiconductor sensor according to claim 1, characterized in that: The semiconductor sensor comprises a semiconductor strip, and the width of the semiconductor strip is 0.1 mm-1 mm.

8. The beam halo detection device based on semiconductor sensor according to claim 1, characterized in that: The sampling rate of the data acquisition module is 5-10 times the bandwidth of the radio frequency electrical signal.

9. A beam halo detection method based on semiconductor sensors, characterized in that: A beam halo detection device based on a semiconductor sensor as claimed in any one of claims 1 to 8 is used to perform beam halo detection, and the beam halo measurement method comprises: The semiconductor sensor is preset to measure the initial position and final position of the beam halo; Controlling the semiconductor sensor to move to the initial position and scanning the beam halo; collecting the radio frequency electrical signal of the semiconductor sensor; generating a particle beam intensity corresponding to the semiconductor sensor at the initial position according to the radio frequency electrical signal; Based on the initial position, the semiconductor sensor is controlled to perform multiple step-wise displacements along the first direction, and the step of collecting the radio frequency electrical signal of the semiconductor sensor is returned to be executed until the average value and standard deviation of the M groups of charge integrals are obtained; The halo distribution of the halo is determined according to the average value and the standard deviation of the charge integrals of the M groups; wherein M is the number of displacements of the semiconductor sensor to the final position; and the first direction is perpendicular to the transmission direction of the halo.

10. The beam halo detection method based on semiconductor sensor according to claim 9, characterized in that: The step of generating a particle beam intensity corresponding to the semiconductor sensor at the initial position according to the radio frequency electrical signal further includes: Repeating N times to collect M×N radio frequency electrical signals corresponding to the semiconductor sensor at M positions; Obtaining N beam current intensities and amplifier gains corresponding to each position of the semiconductor sensor; Preprocessing the M×N radio frequency electrical signals to generate an average value and a standard deviation of the charge integrals of the M radio frequency electrical signals; wherein N is a positive integer greater than or equal to 10; The particle beam intensity at the semiconductor sensor position is determined according to an average value and a standard deviation of the M charge integrals.

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