High-reliability high-density three-dimensional integrated multi-channel millimeter wave receiving and transmitting integrated radio frequency micro module

Abstract

The invention provides a high-reliability high-density three-dimensional integrated multichannel millimeter wave transceiving integrated radio frequency micro module, which adopts three-dimensional ceramic packaging as a packaging body and comprises an amplitude-phase unit and a transceiving unit, and the two units and a cover plate realize electrical vertical interconnection and airtight packaging through three-dimensional stacking. The micro module receives an input signal, the input signal enters a receiving channel after being selected by a switch, an amplitude-limiting low-noise chipset in the micro module carries out amplitude-limiting amplification on the received signal, then the received signal is output to an amplitude-phase multifunctional chip, and the received signal is synthesized and output after amplitude-phase adjustment and amplification. A transmitting input signal is input to the amplitude-phase multifunctional chip after being subjected to power division, is subjected to power amplification after being subjected to amplitude-phase adjustment and amplification, is selected by the transmitting-receiving switch, and is radiated and output through the antenna. A negative electricity protection circuit and a pulse modulation circuit are integrated in the micro module, and pulse control of transmitting and receiving work of the micro module is achieved. The micro module adopts a stepped heat dissipation technology of the chip, the substrate, the functional unit and the micro module, and has very strong practicability.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency microsystems, and specifically relates to a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule. Background Art

[0002] Moore's Law has approached its physical limit, but in the future, electronic information systems will continue to develop towards higher integration, higher performance, and higher operating frequencies. Traditional integrated packaging technology is gradually unable to meet the requirements of new system integration. The future trend of technological development will be to combine the continuation of Moore's Law with the transcendence of Moore's Law, and to achieve a higher value system - microsystem through three-dimensional heterogeneous heterogeneous integration. Microsystem integration technology is the main means to achieve higher integration, higher performance, and higher operating frequency requirements by integrating heterogeneous heterogeneous methods at the micro-nano scale.

[0003] As an advanced integrated packaging technology under the trend of system miniaturization, RF microsystem integration technology has become a major basic technology that leads equipment development and promotes electronic technology innovation. It is an important technical platform that supports the transformation of electronic information equipment capabilities in the fields of sensing and communication. It is also one of the core technologies in current electronic information technology research.

[0004] RF microsystems are mainly aimed at the application needs of miniaturization, lightness and multifunctionality of integrated RF front-ends and active arrays in cutting-edge fields such as 5G communications and the Internet of Things. Based on electronic components such as microelectronics, optoelectronics, and MEMS, RF microsystem heterogeneous and heterogeneous integration technology represented by micro-nano processing technology is adopted. In combination with architecture, software and algorithms, RF, digital, optoelectronics, energy and other subsystems are integrated at a high density to achieve the goals of significantly reducing the size and power consumption of RF systems, significantly improving performance and reliability, and significantly reducing channel costs and full life cycle costs. RF microsystem technology has a wide range of applications in cutting-edge fields such as information technology, biology, medical care, industrial control, and consumer electronics.

[0005] POP (Packaged on Package) is one of the most mainstream three-dimensional packaging technologies. POP is packaged by stacking a top-layer packaging module, several middle-layer packaging modules, and a bottom-layer packaging module. Usually, POP uses vertical interconnection methods such as solder balls or solder columns to achieve interconnection between each layer of packaging modules, which greatly reduces the lead length, reduces parasitic parameters, reduces energy loss, and has a higher signal transmission rate and better performance. POP can test each packaging module separately before assembly, thereby reducing the overall manufacturing cost. It has the advantages of relatively simple process, high yield rate, and strong reliability.

[0006] The existing high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule mainly adopts an integrated ceramic shell and tube architecture, and uses LTCC / HTCC multi-layer ceramic substrate as the wiring medium. Due to the complex structure of the millimeter-wave transceiver integrated circuit, the performance requirements such as channel isolation are very high, and the signal integrity and electromagnetic compatibility issues are prominent. However, the LTCC / HTCC multi-layer ceramic substrate cannot achieve three-dimensional packaging, and the wiring accuracy is limited, resulting in a large number of wiring layers, complex stacking structure, high processing difficulty, long processing cycle, low production yield, and high cost; in addition, once the circuit design needs to be modified, the LTCC / HTCC multi-layer ceramic substrate must be redesigned and processed. The processing cycle is very long, which is not conducive to rapid iteration of products and serious response to market demand. Summary of the invention

[0007] In view of the problems existing in the prior art, the present invention provides a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule, which can achieve compact layout to realize integrated transceiver integration and multi-channel high performance, while shortening the heat dissipation path.

[0008] In order to solve the above technical problems, the present invention provides the following technical solutions: a highly reliable, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule, comprising: a transceiver unit, an amplitude and phase unit connected to the transceiver unit, and a cover plate; the micromodule adopts a three-dimensional ceramic package as a package body, and the amplitude and phase unit, the transceiver unit and the cover plate are electrically vertically interconnected and hermetically sealed through three-dimensional stacking;

[0009] The transceiver unit includes: a transceiver unit shell, a switch amplifier circuit integrated inside the transceiver unit shell, and a drive amplifier circuit connected to the switch amplifier circuit.

[0010] The amplitude-phase unit includes: an amplitude-phase unit tube shell, and a three-dimensional heterogeneous amplitude-phase multifunctional circuit integrated inside the amplitude-phase unit tube shell.

[0011] The received input signal enters the switch amplifier circuit and the drive amplifier circuit in the transceiver unit through the cover plate, and enters the amplitude and phase unit after the switch selection; the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit performs amplitude limiting amplification and amplitude and phase adjustment on the received signal, and then outputs it through the lower substrate of the amplitude and phase unit tube shell;

[0012] After the transmitting input signal enters the micro-module through the lower substrate of the amplitude and phase unit tube shell, it enters the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit, and after amplitude and phase adjustment and amplification, it enters the transceiver unit; the switch amplifier circuit in the transceiver unit amplifies the power of the transmitting signal and selects the switch, and then outputs it through the cover plate connected to the transceiver unit.

[0013] Furthermore, the aforementioned transceiver unit tube shell includes: an upper substrate, and an upper surrounding frame integrated on the upper substrate;

[0014] The upper enclosure serves as the input end of the transceiver unit tube shell, receives the receiving input signal from the cover plate, and transmits the receiving input signal to the switch amplifier circuit in the transceiver unit;

[0015] Furthermore, the aforementioned amplitude-phase unit housing includes: a lower substrate, and a lower surrounding frame integrated on the lower substrate;

[0016] The lower substrate serves as the input end of the amplitude-phase unit tube shell, receives the transmission input signal, and transmits the received transmission input to the three-dimensional heterogeneous amplitude-phase multifunctional circuit in the amplitude-phase unit.

[0017] Furthermore, the aforementioned high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule integrates solid copper holes inside the upper substrate and the lower substrate to achieve vertical signal transmission.

[0018] Furthermore, the aforementioned high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule further includes: a chip bonding PAD, a tube-shell bonding area, and a wire bonding;

[0019] The driving amplifier circuit includes: a PMOS tube chip and a PMOS driver chip, which has negative power protection and pulse modulation functions to realize pulse control of the micromodule transmission and reception;

[0020] The switch amplifier circuit includes: a GaN switch power amplifier chip and a switch driver chip;

[0021] The PMOS chip 11, the PMOS driver chip 12, the GaN switch amplifier chip 9, and the switch driver chip 10 are all provided with a chip bonding PAD 13, and the tube shell bonding area 14 is provided on the upper substrate 3 of the tube shell of the transceiver unit.

[0022] One end of the wire bonding is connected to the chip bonding PAD on the PMOS tube chip, the PMOS driver chip, the GaN switch power amplifier chip, and the switch driver chip, and the other end is connected to the shell bonding area on the transceiver unit shell to achieve electrical interconnection between the switch amplifier circuit, the driver amplifier circuit, and the transceiver unit shell;

[0023] Furthermore, the aforementioned three-dimensional heterogeneous amplitude-phase multifunctional circuit comprises: a Si-based wave control chip, micro-bumps, and a GaAs limiting low-noise amplifier chip;

[0024] The GaAs limiting low noise amplifier chip 7 is provided with a chip bonding PAD 13, the Si-based wave control chip 8 is flip-mounted on the GaAs limiting low noise amplifier chip 7 through micro-bumps 16, and the tube shell bonding area 14 is provided on the lower substrate 5 of the amplitude and phase unit tube shell;

[0025] One end of the wire bonding is connected to the chip bonding PAD on the GaAs limiting low noise amplifier chip, and the other end is connected to the tube shell bonding area, so as to realize the electrical interconnection between the three-dimensional heterogeneous amplitude-phase multifunctional circuit and the amplitude-phase unit tube shell.

[0026] Furthermore, the lower substrate BGA solder balls are integrated below the aforementioned lower substrate for interconnection between the micromodule and the PCB; and the cover plate BGA solder balls are integrated above the cover plate for interconnection between the micromodule and the antenna.

[0027] Compared with the prior art, the beneficial technical effects of the present invention using the above technical solution are as follows:

[0028] (1) The high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts compact high-density design technology. Under the premise that the volume requirements of the micromodule are very stringent, a compact layout design must be carried out to achieve integrated transceiver integration and multi-channel high performance: ① The multi-channel receiving modulation circuit and the transmitting low-voltage modulation circuit are integrated in the silicon-based CMOS wave control chip. The transmitting high-voltage modulation circuit is limited by size and adopts a multi-channel sharing mode. ② When the transmitting channel is working, the driving stage is individually controllable, and the final power amplifier is powered on at the same time. The transmitting input microwave signal of each channel can be turned off by powering off the driver stage in standby mode. The switch and the drive power off can ensure the isolation within the channel. ③ The power amplifier circuit adopts a split cavity design, which greatly improves the isolation between channels and ensures the stable performance of each channel of the micromodule.

[0029] (2) The high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts chip integration design and multi-material chip heterogeneous integration technology, and carries out chip-level miniaturization design from multiple dimensions: ① The amplitude and phase multifunctional chip adopts multi-channel GaAs microwave chip and silicon-based CMOS wave control chip heterogeneous integration, giving full play to the microwave performance advantages of GaAs chip and the digital circuit multifunctional advantages of silicon-based CMOS chip, and significantly reducing the chip area through three-dimensional stacking. Each unit circuit of the amplitude and phase multifunctional chip is based on miniaturization design, further reducing the chip area. ② The integrated design of the switch power amplifier chip and the reasonable layout reduce the size; the matching design of the power amplifier and switch inside the chip improves efficiency. ③ The integrated design of the limiting low-noise chip, the limiter has low insertion loss, high power resistance, low noise, high gain, low noise, and low current, and fully optimizes the design and process to achieve the minimum chip size under optimal performance. ④ The switching power amplifier chip and the limiting low-noise chip are synergistically arranged, and the ports are close to each other to reduce transition loss and save the micromodule size to the greatest extent.

[0030] (3) The high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts a stepped heat dissipation technology of chip → substrate → functional unit → micromodule. Since the micromodule has high power and small size, the heat dissipation problem is a severe challenge, and a four-level heat dissipation measure is adopted: ① The power amplifier chip die is increased in spacing to reduce the power amplifier junction temperature; improve the power amplifier efficiency and reduce the heat consumption of the power amplifier chip. ② The ceramic substrate is filled with solid copper holes to improve the heat dissipation capacity of the material. ③ The upper and lower functional units are directly stacked and interconnected in three dimensions, eliminating the traditional BGA interconnection path and shortening the heat dissipation path. ④ Optimize the sintering process of the micromodule to reduce the overall thermal resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is the top view of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0032] Figure 2 This is the bottom view of the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0033] Figure 3 It is a cross-sectional view of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0034] Figure 4 It is a schematic diagram of the TOP layer of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-module cover.

[0035] Figure 5 It is a schematic diagram of the BOT layer of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-module cover.

[0036] Figure 6 This is a schematic diagram of the TOP layer of the substrate of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0037] Figure 7 It is a schematic diagram of the BOT layer on the substrate of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0038] Figure 8 It is a schematic diagram of the TOP layer of the lower substrate of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0039] Fig. 9 It is a schematic diagram of the BOT layer of the lower substrate of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0040] Fig.10 It is a schematic diagram of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-module transceiver unit.

[0041] Fig.11 It is a schematic diagram of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-module amplitude and phase unit.

[0042] Fig.12 It is a schematic diagram of the three-dimensional stacking of high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-modules.

[0043] Fig.13 It is a BGA schematic diagram of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0044] Fig.14 It is a schematic diagram of the compact high-density design technology of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0045] Fig.15 It is a schematic diagram of the integrated design of a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micro-module chip.

[0046] Fig.16 It is a schematic diagram of heterogeneous integration of multi-material chips in a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0047] Fig.17 It is a schematic diagram of the stepped heat dissipation technology of the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule.

[0048] In the figure, 1-cover, 2-upper frame, 3-upper substrate, 4-lower frame, 5-lower substrate, 6-solid copper hole, 7-GaAs limiting low noise amplifier chip, 8-Si-based wave control chip, 9-GaN switch amplifier chip, 10-switch driver chip, 11-PMOS tube chip, 12-PMOS driver chip, 13-chip bonding PAD, 14-tube shell bonding area, 15-lead bonding, 16-micro bump, 17-lower substrate BGA solder ball, 18-cover plate BGA solder ball. DETAILED DESCRIPTION

[0049] In order to better understand the technical content of the present invention, specific embodiments are given and described as follows in conjunction with the accompanying drawings.

[0050] Various aspects of the invention are described herein with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the invention are not limited to the accompanying drawings. It should be understood that the invention is implemented by any of the various concepts and embodiments described above, as well as the concepts and embodiments described in detail below, because the concepts and embodiments disclosed in the invention are not limited to any implementation. In addition, some aspects disclosed in the invention may be used alone or in any appropriate combination with other aspects disclosed in the invention.

[0051] The present invention proposes a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule, which aims to creatively integrate advanced packaging technology on the basis of traditional ceramic packaging to innovate integrated architecture and integrated process, and realize high-density three-dimensional integration of ceramic packaging, and integrate independent RF receiving channels and RF transmitting channels. The micromodule subverts the technical route of traditional LTCC / HTCC multi-layer ceramic substrates, simplifies the stacking structure, improves multi-channel RF performance, greatly reduces the packaging volume, and realizes high-density integration and high reliability of the microsystem at the same time, and has strong engineering practicality.

[0052] refer to Figure 1 , Figure 2 as well as Figure 3 The present invention provides a high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule composed of 16 parts, including a cover plate 1, an upper enclosure 2, an upper substrate 3, a lower enclosure 4, a lower substrate 5, a solid copper hole 6, a GaAs limiting low-noise amplifier chip 7, a Si-based wave control chip 8, a GaN switch amplifier chip 9, a switch driver chip 10, a PMOS tube chip 11, a PMOS driver chip 12, a chip bonding PAD 13, a tube-shell bonding area 14, a wire bonding 15, a micro bump 16, a lower substrate BGA solder ball 17, and a cover plate BGA solder ball 18.

[0053] The upper substrate 3 and the upper surrounding frame 2 integrated on the upper substrate 3 constitute a transceiver unit shell.

[0054] The lower substrate 5 and the lower surrounding frame 4 integrated on the lower substrate 5 constitute an amplitude-phase unit housing.

[0055] The driving amplifier circuit includes: a PMOS tube chip 11 and a PMOS driver chip 12, which has negative power protection and pulse modulation functions to realize pulse control of the micromodule transmission and reception.

[0056] The switch amplifier circuit includes: a GaN switch power amplifier chip 9 and a switch driver chip 10 .

[0057] The transceiver unit tube shell, the switch amplifier circuit integrated inside the transceiver unit tube shell, and the driving amplifier circuit connected to the switch amplifier circuit constitute the transceiver unit. The PMOS tube chip 11, the PMOS driver chip 12, the GaN switch power amplifier chip 9, and the switch driver chip 10 are all provided with a chip bonding PAD13, and the tube shell bonding area 14 is provided on the upper substrate 3 of the transceiver unit tube shell. One end of the lead bonding 15 is connected to the chip bonding PAD13 on the PMOS tube chip 11, the PMOS driver chip 12, the GaN switch power amplifier chip 9, and the switch driver chip 10, and the other end is connected to the tube shell bonding area 14 on the transceiver unit tube shell, so as to realize the electrical interconnection of the switch amplifier circuit, the driving amplifier circuit, and the transceiver unit tube shell.

[0058] The Si-based wave control chip 8, the micro-bumps 16, and the GaAs limiting low noise amplifier chip 7 constitute a three-dimensional heterogeneous amplitude-phase multifunctional circuit. The Si-based wave control chip 8 is flip-chip mounted on the GaAs limiting low noise amplifier chip 7 through the micro-bumps 16. The GaAs limiting low noise amplifier chip 7 is provided with a chip bonding PAD 13, and the tube-shell bonding area 14 is provided on the lower substrate 5 of the tube shell of the amplitude-phase unit;

[0059] One end of the wire bonding 15 is connected to the chip bonding PAD 13 on the GaAs limiting low noise amplifier chip 7, and the other end is connected to the tube shell bonding area 14, so as to realize the electrical interconnection between the three-dimensional heterogeneous amplitude-phase multifunctional circuit and the amplitude-phase unit tube shell.

[0060] The amplitude-phase unit tube shell and the three-dimensional heterogeneous amplitude-phase multifunctional circuit integrated inside the amplitude-phase unit tube shell constitute the amplitude-phase unit.

[0061] The micromodule uses a three-dimensional ceramic package as a package body, and the amplitude and phase unit, the transceiver unit and the cover plate 1 are three-dimensionally stacked to achieve electrical vertical interconnection and airtight packaging;

[0062] The received input signal enters the transceiver unit through the cover plate 1. The upper frame 2 serves as the input end of the transceiver unit shell, receives the received input signal from the cover plate 1, and transmits the received input signal to the switch amplifier circuit and the drive amplifier circuit in the transceiver unit; after the switch selection, it enters the amplitude and phase unit; the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit performs amplitude limiting amplification and amplitude and phase adjustment on the received signal, and then outputs it through the amplitude and phase unit shell;

[0063] After the transmitting input signal enters the micromodule through the lower substrate 5 of the amplitude and phase unit tube shell, it enters the three-dimensional heterogeneous amplitude and phase multifunctional circuit inside the amplitude and phase unit, and after amplitude and phase adjustment and amplification, it enters the transceiver unit; the switch amplifier circuit in the transceiver unit performs power amplification and switch selection on the transmitting signal, and then outputs it through the cover plate 1 connected to the transceiver unit.

[0064] The lower substrate 5 serves as the input end of the amplitude and phase unit shell, receives the transmit input signal, and transmits the received transmit input to the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit. Solid copper holes 6 are integrated inside the upper substrate 3 and the lower substrate 5 to achieve vertical signal transmission. The lower substrate BGA solder balls 17 are integrated below the lower substrate 5 for interconnection between the micromodule and the PCB; the cover plate BGA solder balls 18 are integrated above the cover plate 1 for interconnection between the micromodule and the antenna.

[0065] The micromodule of the present invention adopts a ceramic three-dimensional integrated packaging architecture, a multi-material chip heterogeneous integration architecture, a chip integration design and a stepped heat dissipation technology to realize the three-dimensional integration of the multi-channel transceiver integrated radio frequency circuit of the micromodule; the ceramic three-dimensional packaging architecture decomposes the entire micromodule into two functional units, namely, an amplitude and phase unit and a transceiver unit, and realizes electrical vertical interconnection and airtight packaging through three-dimensional stacking; the multi-material chip heterogeneous integration architecture performs chip-level heterogeneous integration of chips of different materials such as silicon-based and compound-based materials through a special integration process, giving full play to the microwave high performance advantages of compound-based chips and the digital circuit multifunctional advantages of silicon-based chips, and significantly reducing the chip area through three-dimensional stacking; the chip integration design disassembles the chip into different functional units, and achieves the optimal overall chip design by coordinating the design of each functional unit, and at the same time coordinates the chip design and process design to achieve the minimum chip size under the optimal chip performance; the stepped heat dissipation technology adopts a four-level heat dissipation path of chip→substrate→functional unit→micromodule, takes thermal management measures from the heat source, releases the heat through multiple dimensions such as materials, structures, and processes, and realizes efficient heat dissipation of the micromodule as a whole.

[0066] The input signal received by the micromodule first enters the receiving channel after being selected by the switch. The limiting low-noise chipset limits and amplifies the received signal and then outputs it to the amplitude and phase multifunctional chip. After amplitude and phase adjustment and amplification, it is synthesized and output.

[0067] The micro-module transmits the input signal which is input into the amplitude and phase multifunctional chip after the power division, and then continues to be power amplified and output after the amplitude and phase adjustment, and then radiated and output through the antenna after the switch selection.

[0068] The micro-module integrates negative power protection circuit and pulse modulation circuit to realize pulse control of the micro-module's transmission and reception.

[0069] The micromodule uses a three-dimensional ceramic package as the package body, which is divided into an amplitude and phase unit and a transceiver unit. The two functional units and the cover plate are three-dimensionally stacked to achieve electrical vertical interconnection and airtight packaging.

[0070] The micro-module adopts compact high-density design technology. Under the premise of very strict requirements on the volume of the micro-module, it realizes integrated transceiver integration and multi-channel high performance, and carries out compact layout design.

[0071] The micromodule adopts chip integration design, fully optimizing the design and process to achieve the smallest chip size with optimal performance.

[0072] The micromodule adopts multi-material chip heterogeneous integration technology, fully leveraging the microwave high performance advantages of compound-based chips and the digital circuit multifunctional advantages of silicon-based chips, and significantly reducing the chip area through three-dimensional stacking.

[0073] The micromodule adopts the stepped heat dissipation technology of chip → substrate → functional unit → micromodule. Under the harsh conditions of small size and high power of micromodule, 4-level heat dissipation measures are adopted to achieve efficient heat dissipation of the whole micromodule.

[0074] like Figure 4 , Figure 5 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention uses ceramic material as the medium of the cover plate 1, breaking through the limitation that traditional ceramic packaging cover plates can only use metal materials, and laying the foundation for the high-density three-dimensional integration of micromodules.

[0075] like Figure 6 , Figure 7 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts a cavity-divided design for power amplifier circuits such as GaN switch amplifier chip 9, switch driver chip 10, PMOS tube chip 11 and PMOS driver chip 12 on the upper substrate, which greatly improves the isolation between channels and ensures the stable performance of each channel of the power amplifier circuit.

[0076] like Figure 8 , Fig. 9 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention has a lower substrate with heterogeneous integration of GaAs limiting low-noise amplifier chip 7 and Si-based wave control chip 8, and adopts a large cavity design to meet the space requirements of multi-channel amplitude and phase multifunctional circuits.

[0077] like Fig.10 As shown, in the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention, the transmission input signal of the transceiver unit is input to the amplitude and phase multifunctional chip after power division, and then continues to be power amplified and output after amplitude and phase adjustment amplification, and then radiated and output through the antenna after switch selection. The micromodule integrates negative power protection circuit and pulse modulation circuit inside to realize pulse control of micromodule transmission and reception.

[0078] like Fig.11As shown, in the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention, the receiving input signal of the amplitude and phase unit enters the receiving channel after switch selection, and the limiting low-noise chipset limits and amplifies the received signal and outputs it to the amplitude and phase multifunctional chip, which is synthesized and output after amplitude and phase adjustment and amplification.

[0079] like Fig.12 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts a three-dimensional ceramic package as a package body, which is divided into an amplitude and phase unit and a transceiver unit. The two functional units and the cover plate 1 are three-dimensionally stacked to achieve electrical vertical interconnection and airtight packaging.

[0080] like Fig.13 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts BGA technology to lead out the signal of the lower substrate 5BOT through the lower substrate BGA solder ball 17, and lead out the signal of the cover plate 1TOP through the cover plate BGA solder ball 18.

[0081] like Fig.14 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule of the present invention adopts a compact high-density design technology. Under the premise that the volume requirements of the micromodule are very stringent, a compact layout design must be carried out to achieve integrated transceiver integration and multi-channel high performance: ① The multi-channel receiving modulation circuit and the transmitting low-voltage modulation circuit are integrated in the Si-based wave control chip 8. The transmitting modulation circuit is limited by size and adopts a multi-channel sharing mode. ② When the transmitting channel is working, the switch driver chip 10 and the PMOS driver chip 12 are individually controllable, and the final power amplifier is powered on at the same time. The transmission input microwave signal of each channel can be turned off by powering off the driver stage standby. The GaN switch power amplifier chip 9, the switch driver chip 10 and the PMOS driver chip 12 are powered off to ensure the isolation within the channel. ③ The power amplifier circuit adopts a cavity design, which greatly improves the isolation between channels and ensures the stable performance of each channel of the micromodule.

[0082] like Fig.15 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts chip integration design: ① GaN switch amplifier chip 9 integrated design, reasonable layout to reduce size; chip internal amplifier and switch matching design to improve efficiency. ② GaAs limiting low-noise amplifier chip 7 integrated design, limiter low insertion loss, high power resistance, low noise, high gain, low noise, small current, fully optimized design and process to achieve the minimum chip size with optimal performance.

[0083] like Fig.16As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts multi-material chip heterogeneous integration technology: the amplitude and phase multifunctional chip adopts a multi-channel GaAs limiting low-noise amplifier chip 7 and a Si-based wave control chip 8 heterogeneously integrated, giving full play to the microwave performance advantages of the GaAs chip and the digital circuit multifunctional advantages of the silicon CMOS chip, and significantly reducing the chip area through three-dimensional stacking.

[0084] like Fig.17 As shown, the high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule of the present invention adopts a stepped heat dissipation technology of chip → substrate → functional unit → micromodule. Since the micromodule has high power and small size, the heat dissipation problem is a severe challenge, and a four-level heat dissipation measure is adopted: ① The GaN switch amplifier chip 9 increases the spacing to reduce the junction temperature of the amplifier; improves the amplifier efficiency and reduces the heat consumption of the amplifier chip. ② The cover plate 1, the upper substrate 3, and the lower substrate 5 are filled with solid copper holes 6 to improve the heat dissipation capacity of the material. ③ The upper and lower functional units are directly stacked and interconnected in three dimensions, eliminating the traditional BGA interconnection path and shortening the heat dissipation path. ④ Optimize the sintering process of the micromodule to reduce the overall thermal resistance.

[0085] The high-reliability, high-density, three-dimensionally integrated multi-channel millimeter-wave transceiver integrated RF micromodule provided by the present invention generally adopts a ceramic three-dimensional integrated packaging architecture, a multi-material chip heterogeneous integration architecture, a chip integration design and a stepped heat dissipation technology to achieve three-dimensional integration of the multi-channel transceiver integrated RF circuit of the micromodule, and combines the advantages of the ceramic cover plate 1, the ceramic tube shell 2 / 3, the solid copper hole 6, the wire bonding 15, the micro-bump 16 and the BGA 17 / 18 technology to achieve multiple functions: (1) Ceramic material is used as the medium of the cover plate 1, breaking through the limitation that the traditional ceramic packaging cover plate can only use metal materials; (2) The upper substrate 3 is designed for power The power amplifier circuit adopts a split-cavity design, which greatly improves the isolation between channels and ensures the stable performance of each channel of the power amplifier circuit; (3) The lower substrate 5 adopts a large cavity design to meet the space requirements of multi-channel amplitude and phase multifunctional circuits; (4) The micromodule adopts a three-dimensional ceramic package as the package body, which is divided into an amplitude and phase unit and a transceiver unit. The two functional units and the cover plate 1 are electrically vertically interconnected and hermetic through three-dimensional stacking; (5) BGA technology is used to lead out the signal of the lower substrate 5BOT through the lower substrate BGA solder ball 17, and the signal of the cover plate 1TOP is led out through the cover plate BGA solder ball 18; (6) Compact high-density design technology is adopted. Under the premise that the volume requirements of the micromodule are very strict, a compact layout design must be carried out to achieve integrated transceiver integration and multi-channel high performance; (7) Adopt chip integration design, fully optimize the design and process to achieve the minimum chip size with optimal performance; (8) Adopt multi-material chip heterogeneous integration technology, and use special integration processes to integrate chips of different materials such as silicon-based and compound-based chips at the chip level, give full play to the microwave high performance advantages of compound-based chips and the digital circuit multifunctional advantages of silicon-based chips, and significantly reduce the chip area through three-dimensional stacking; (9) Adopt a four-level stepped heat dissipation technology of chip → substrate → functional unit → micromodule, take thermal management measures starting from the heat source, release heat through multiple dimensions such as materials, structure, and process, and achieve efficient heat dissipation of the micromodule as a whole.

[0086] Although the present invention has been described above with preferred embodiments, it is not intended to limit the present invention. A person skilled in the art of the present invention may make various modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the definition of the claims.

Claims

1. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated RF micromodule, characterized in that: include: A transceiver unit, an amplitude and phase unit connected to the transceiver unit, and a cover plate (1); The micromodule uses a three-dimensional ceramic package as a package body, and the amplitude and phase unit, the transceiver unit and the cover plate (1) are three-dimensionally stacked to achieve electrical vertical interconnection and airtight packaging; The transceiver unit includes: a transceiver unit shell, a switch amplifier circuit integrated inside the transceiver unit shell, and a drive amplifier circuit connected to the switch amplifier circuit. The amplitude-phase unit includes: an amplitude-phase unit tube shell, and a three-dimensional heterogeneous amplitude-phase multifunctional circuit integrated inside the amplitude-phase unit tube shell. The received input signal enters the switch amplifier circuit and the drive amplifier circuit in the transceiver unit through the cover plate (1), and after being selected by the switch, enters the amplitude and phase unit; the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit performs amplitude limiting amplification and amplitude and phase adjustment on the received signal, and then outputs the signal through the lower substrate (5) of the amplitude and phase unit tube shell; After the transmission input signal enters the micromodule through the lower substrate (5) of the amplitude and phase unit tube shell, it enters the three-dimensional heterogeneous amplitude and phase multifunctional circuit in the amplitude and phase unit, and after amplitude and phase adjustment and amplification, it enters the transceiver unit; after the switch amplifier circuit in the transceiver unit performs power amplification and switch selection on the transmission signal, it is output through the cover plate (1) connected to the transceiver unit.

2. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 1, characterized in that: The transceiver unit tube shell comprises: an upper base plate (3), and an upper surrounding frame (2) integrated on the upper base plate (3); The upper enclosure (2) serves as the input end of the transceiver unit tube shell, receiving a receiving input signal from the cover plate (1); the upper enclosure (2) transmits the receiving input signal to the upper substrate (3); and the upper substrate (3) transmits the receiving input signal to the switch amplifier circuit in the transceiver unit.

3. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 2, characterized in that: The amplitude-phase unit tube shell comprises: a lower substrate (5), and a lower surrounding frame (4) integrated on the lower substrate (5); The lower substrate (5) serves as the input end of the amplitude-phase unit tube shell, receives the transmission input signal, and transmits the received transmission input to the three-dimensional heterogeneous amplitude-phase multifunctional circuit in the amplitude-phase unit.

4. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 2 or 3, characterized in that: Solid copper holes (6) are integrated inside the upper substrate (3) and the lower substrate (5) to achieve vertical signal transmission.

5. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 3, characterized in that: Also includes: Chip bonding PAD (13), tube shell bonding area (14), wire bonding (15); The driving amplifier circuit comprises: a PMOS tube chip (11) and a PMOS driver chip (12), which has negative power protection and pulse modulation functions, and realizes pulse control of the micromodule transmission and reception work; The switch amplifier circuit comprises: a GaN switch power amplifier chip (9) and a switch drive chip (10); A chip bonding PAD (13) is provided on the PMOS tube chip (11), the PMOS driver chip (12), the GaN switch power amplifier chip (9), and the switch driver chip (10); a tube shell bonding area (14) is provided on the upper substrate (3) of the tube shell of the transceiver unit; One end of the wire bonding (15) is connected to the chip bonding PAD (13) on the PMOS tube chip (11), the PMOS driver chip (12), the GaN switch power amplifier chip (9), and the switch driver chip (10), and the other end is connected to the tube shell bonding area (14) on the tube shell of the transceiver unit, so as to realize the electrical interconnection of the switch amplifier circuit, the driver amplifier circuit and the tube shell of the transceiver unit.

6. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 5, characterized in that: The three-dimensional heterogeneous amplitude-phase multifunctional circuit comprises: a Si-based wave control chip (8), micro-bumps (16), and a GaAs limiting low-noise amplifier chip (7); A chip bonding PAD (13) is provided on the GaAs limiting low noise amplifier chip (7), a Si-based wave control chip (8) is flip-mounted on the GaAs limiting low noise amplifier chip (7) via micro-bumps (16), and a tube shell bonding area (14) is provided on the lower substrate (5) of the amplitude and phase unit tube shell; One end of the wire bonding (15) is connected to a chip bonding PAD (13) on a GaAs limiting low noise amplifier chip (7), and the other end is connected to a tube shell bonding area (14), thereby realizing electrical interconnection between a three-dimensional heterogeneous amplitude-phase multifunctional circuit and an amplitude-phase unit tube shell.

7. A high-reliability, high-density, three-dimensional integrated multi-channel millimeter-wave transceiver integrated radio frequency micromodule according to claim 3, characterized in that: The lower substrate (5) has integrated lower substrate BGA solder balls (17) for interconnecting the micromodule and the PCB; the cover plate (1) has integrated cover plate BGA solder balls (18) for interconnecting the micromodule and the antenna.

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