A beam corona detection device and method based on semiconductor sensors

Abstract

This invention discloses a beam corona detection device and method based on a semiconductor sensor. The device includes a semiconductor sensor, a driving module, a data acquisition module, and a processing module. A first end of the driving module is connected to the semiconductor sensor, and a second end of the driving module is connected to a first end of the processing module. The driving module is used to move the semiconductor sensor along a first direction to scan the beam corona. The second end of the semiconductor sensor is connected to the data acquisition module. The semiconductor sensor generates a corresponding radio frequency (RF) signal based on the beam corona scanning signal. The data acquisition module receives the RF signal and transmits it to the processing module. The processing module calculates the beam corona distribution based on the RF signal. The beam corona detection device provided by this invention obtains the beam corona distribution by detecting the beam corona using a semiconductor sensor. It not only has a sufficiently high signal-to-noise ratio but can also achieve a signal-to-noise ratio greater than 10. 6 The measurement dynamic range.

Description

Technical Field

[0001] This invention relates to the field of particle accelerator technology, and in particular to a beam corona detection device and method based on a semiconductor sensor. Background Technology

[0002] For modern high-current particle accelerators, beam loss can cause serious consequences such as accelerator operation interruption, superconducting magnet quenching, and beamline element activation. In order to ensure the steady increase of particle accelerator power and high-quality and safe operation, it is necessary to effectively control beam quality and beam loss.

[0003] Beam loss typically occurs due to factors such as high-order nonlinear magnetic fields, beam optical mismatch, beam clustering effects, and particle scattering, which increase the influence of a small number of particles beyond the accelerator's transverse acceptability, ultimately resulting in beam loss within the beam channel. In the beam phase space, these particles with significant influence are located far from the beam nucleus in at least one degree of freedom and are commonly referred to as the beam halo.

[0004] In existing technologies for measuring the corona, a complete measurement takes more than 30 minutes, which is inefficient and has a low dynamic range. Summary of the Invention

[0005] This invention provides a beam corona detection device and method based on a semiconductor sensor. By utilizing a semiconductor sensor to detect the beam corona, not only is the signal-to-noise ratio of the radio frequency signal output by the semiconductor sensor sufficiently high, but it can also achieve a signal-to-noise ratio greater than 10. 6 The measurement dynamic range.

[0006] According to a first aspect of the present invention, a beam corona detection device based on a semiconductor sensor is provided, comprising: a semiconductor sensor, a driving module, a data acquisition module, and a processing module;

[0007] The first end of the driving module is connected to the semiconductor sensor, and the second end of the driving module is connected to the first end of the processing module. The driving module is used to move the semiconductor sensor along a first direction to scan the corona beam, and the first direction is perpendicular to the transmission direction of the corona beam.

[0008] The second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency electrical signal based on the scanning signal of the beam corona;

[0009] The second end of the data acquisition module is connected to the second end of the processing module, and the data acquisition module is used to receive the radio frequency electrical signal and transmit it to the processing module.

[0010] The processing module calculates the corona distribution of the beam based on the radio frequency electrical signal.

[0011] Optional components also include a vacuum chamber, a support frame, a vacuum coaxial cable, and a vacuum feedthrough;

[0012] The first and second ends of the bracket are both connected to the semiconductor sensor, and the third end of the bracket is connected to the drive module. The bracket is fixedly connected to the semiconductor sensor and drives the semiconductor sensor to scan the beam halo.

[0013] The first end of the vacuum coaxial cable is connected to the semiconductor sensor, and the second end of the vacuum coaxial cable is connected to the data acquisition module through the vacuum feedthrough. The vacuum coaxial cable is used to transmit the radio frequency electrical signal to the data acquisition module.

[0014] The semiconductor sensor, the bracket, and the vacuum coaxial cable are all located inside the vacuum chamber, and the vacuum feedthrough is fixed to the side wall of the vacuum chamber.

[0015] Optionally, a filtering module may also be included;

[0016] The first end of the filtering module is connected to the semiconductor sensor, and the second end of the filtering module is connected to the data acquisition module.

[0017] Optional features also include a DC bias and an amplifier module;

[0018] The first terminal of the DC bias is connected to the semiconductor sensor, and the second terminal of the DC bias is connected to the filter module. The DC bias is used to provide a DC bias voltage to the semiconductor sensor.

[0019] The first end of the amplifier module is connected to the filter module, and the second end of the amplifier module is connected to the data acquisition module. The amplifier module is used to adjust the signal amplitude of the radio frequency electrical signal.

[0020] Optionally, it may also include a first power module and a second power module;

[0021] The first terminal of the first power module is connected to the DC bias, and the second terminal of the first power module is connected to the processing module. The first power module is used to provide the operating voltage of the DC bias.

[0022] The first end of the second power module is connected to the amplifier module, and the second end of the second power module is connected to the processing module. The second power module is used to provide the operating voltage of the amplifier module.

[0023] Optionally, a control module may also be included;

[0024] The first end of the control module is connected to the drive module, and the second end of the control module is connected to the processing module. The control module is used to control the drive module to drive the semiconductor sensor to scan the halo beam and monitor the position information of the semiconductor sensor in real time.

[0025] Optionally, the semiconductor sensor includes a semiconductor strip with a width of 0.1 mm to 1 mm.

[0026] Optionally, the sampling rate of the data acquisition module is 5-10 times the bandwidth of the radio frequency electrical signal.

[0027] According to a second aspect of the present invention, a beam corona detection method based on a semiconductor sensor is provided, wherein beam corona detection is performed using a beam corona detection device based on a semiconductor sensor as described in any one of the first aspects of the present invention, and the beam corona measurement method includes:

[0028] The initial and final positions of the semiconductor sensor for measuring the beam corona are preset;

[0029] The semiconductor sensor is controlled to move to the initial position and scan the halo beam;

[0030] Acquire the radio frequency electrical signal of the semiconductor sensor;

[0031] The particle beam intensity corresponding to the semiconductor sensor at the initial position is generated based on the radio frequency electrical signal;

[0032] Based on the initial position, the semiconductor sensor is controlled to perform multiple step displacements along the first direction, and then returns to the step of acquiring the radio frequency electrical signal of the semiconductor sensor until the average value and standard deviation of M groups of charge integrals are obtained.

[0033] The corona distribution is determined based on the average value and standard deviation of the charge integrals in group M; where M is the number of displacements required for the semiconductor sensor to move to the final position; and the first direction is perpendicular to the transmission direction of the corona.

[0034] Optionally, the step of generating the particle beam intensity corresponding to the semiconductor sensor at the initial position based on the radio frequency electrical signal further includes:

[0035] The M×N radio frequency electrical signals corresponding to the M positions of the semiconductor sensor are collected N times repeatedly;

[0036] Obtain the N beam current intensities and amplifier gains corresponding to each position of the semiconductor sensor;

[0037] The M×N radio frequency electrical signals are preprocessed to generate the average value and standard deviation of the charge integral of the M radio frequency electrical signals; where N is a positive integer greater than or equal to 10;

[0038] The particle beam intensity at the location of the semiconductor sensor is determined based on the average and standard deviation of the M charge integrals.

[0039] This invention discloses a beam corona detection device based on a semiconductor sensor, comprising: a semiconductor sensor, a driving module, a data acquisition module, and a processing module; a first end of the driving module is connected to the semiconductor sensor, and a second end of the driving module is connected to the first end of the processing module. The driving module is used to move the semiconductor sensor along a first direction to scan the beam corona, the first direction being perpendicular to the beam corona transmission direction; the second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency (RF) signal based on the beam corona scanning signal; the second end of the data acquisition module is connected to the second end of the processing module, and the data acquisition module is used to receive the RF signal and transmit it to the processing module; the processing module calculates the beam corona distribution based on the RF signal. This invention provides a beam corona detection device and method based on a semiconductor sensor. By utilizing a semiconductor sensor to detect the beam corona, not only is the signal-to-noise ratio of the RF signal output by the semiconductor sensor sufficiently high, but it can also achieve a signal-to-noise ratio greater than 10. 6 The measurement dynamic range.

[0040] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of the present invention, nor is it intended to limit the scope of the invention. Other features of the invention will become readily apparent from the following description. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the structure of a beam halo detection device in the prior art;

[0043] Figure 2 This is a schematic diagram of another existing halo detection device.

[0044] Figure 3 This is a schematic diagram of another existing halo detection device.

[0045] Figure 4 This is a schematic diagram of another existing halo detection device.

[0046] Figure 5 This is a schematic diagram of another existing halo detection device.

[0047] Figure 6 This is a structural diagram of a beam corona detection device based on a semiconductor sensor provided in an embodiment of the present invention;

[0048] Figure 7 This is a flowchart of a beam corona detection method based on a semiconductor sensor provided in an embodiment of the present invention;

[0049] Figure 8 This is a flowchart of another beam corona detection method based on a semiconductor sensor provided in an embodiment of the present invention.

[0050] Figure 9 This is a schematic diagram of the test results of a beam corona detection device based on a semiconductor sensor provided in an embodiment of the present invention. Detailed Implementation

[0051] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0052] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0053] It should be understood that the various forms of processes shown above can be used, with steps reordered, added, or deleted. For example, the steps described in this invention can be executed in parallel, sequentially, or in different orders, as long as the desired result of the technical solution of this invention can be achieved, and this is not limited herein.

[0054] In quantitative studies of beam halos, we can define the particles outside the 3σ region of the beam as the beam halo. We can also divide the beam distribution into three parts based on particle density: the core, the tail, and the halo, with corresponding particle densities of 1-10. -2 10 -2 -10 -4 10 -4 -10 -6 In beam halo diagnostics research, the core-halo boundary is often blurred, and particles with extremely low density are considered as the halo. It can be seen that from different perspectives of accelerator physics and beam diagnostics, the definition of the halo varies in the literature, but the general consensus is that the halo has extremely low density, is extremely difficult to measure, and is very likely to cause beam loss.

[0055] The formation and evolution of beam halos are closely related to the accelerator beam optics design, hardware status, and operating mode. The beam halo formation mechanism often differs for each accelerator, and even for the same accelerator, its halo distribution characteristics and dominant physical mechanisms may vary with the operating mode. For high-current proton accelerators, especially large particle accelerators with megawatt-level beam power, the importance of establishing a beam halo physical model through extensive experimental measurements and conducting targeted beam loss optimization is self-evident. This has become an important part of the design and commissioning of large particle accelerators such as the Large Hadron Collider (LHC) at CERN, the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory in the United States, and the Japan Proton Accelerator Research Complex (J-PARC).

[0056] For one-dimensional beam corona distribution measurements, internationally advanced detectors generally aim for a dynamic range exceeding six orders of magnitude as their optimization goal. However, the dynamic range for multi-dimensional beam halos within phase space decreases by orders of magnitude with increasing dimension. To achieve large dynamic range and high-sensitivity beam corona diagnosis, the primary key scientific issue is to propose and develop advanced beam corona diagnostic methods. Even though most beam profile detectors have the potential to be upgraded to beam corona detectors, the optimal dynamic range and technical difficulty achievable by different beam profile detection methods vary. An ideal beam corona detector should possess the following characteristics: large detection dynamic range, high sensitivity, technical reliability, and reasonable cost. Typically, direct beam corona measurement mainly includes wire scanning methods and optical imaging-based methods.

[0057] Existing technology 1

[0058] Wire scan detectors (FSDs) possess advantages such as simple structure, high sensitivity, and reliable performance, and are widely used in beam profile measurements. Therefore, numerous laboratories both domestically and internationally have conducted research on beam corona diagnosis based on FSDs. For relativistic particle beams, scintillators and photomultiplier tubes (PMTs) are typically used to measure the intensity of secondary particles downstream of the FSD and to provide the transverse beam distribution. A simple FSD corona detector scheme places a scintillator and PMT assembly downstream of the wire target (1-5 meters). Utilizing the positive correlation between PMT gain and operating voltage, the sensitivity of the scintillator detector is optimized by controlling the PMT bias to ensure a sufficiently high signal-to-noise ratio (SNR) for different secondary particle intensities and to avoid PMT output signal saturation. This scheme has a measurement dynamic range of approximately 10... 5 , Figure 1 This is a schematic diagram of a beam corona detection device in the prior art, for reference. Figure 1 It mainly includes: filament 101, wire target support 102, wire target driver 103, scintillator 104, photomultiplier tube 105, electrical signal conditioning module 106, data acquisition module 107, and control module 108.

[0059] Existing technology 2

[0060] To overcome the influence of background secondary particles on the lower limit of the measurement dynamic range, A. Freyberger et al. used multiple laterally symmetrically distributed secondary particle probes (counting mode) and coincidence techniques for signal discrimination at the Continuous Electron Beam Accelerator Facility (CEBAF), thereby increasing the measurement dynamic range to approximately 10. 8 , Figure 2 This is a schematic diagram of another existing halo detection device, such as... Figure 2 As shown, it mainly includes: driver 201, wire target support 202, filament 203, vacuum chamber 204, secondary particle probe 205, electrical signal conditioning module 206, data acquisition and matching module 207, and control module 208.

[0061] Existing technology 3

[0062] In 2016, Voroshilov et al. at the Budker Institute of Nuclear Physics (BINP) conducted exploratory research on fiber-optic scanning beam corona detectors. In the experiment, a 1 mm diameter optical fiber interacted with the beam, and PMT probes at both ends of the fiber collected Cherenkov radiation generated as charged particles passed through the fiber. The corona was measured based on the variation in photon count at different fiber locations. The experiment only observed the corona portion far from the beam nucleus, and its dynamic range reached 10. 4 . Figure 3 This is a schematic diagram of another existing halo detection device, such as... Figure 3 As shown, it mainly includes: a drive motor 301, an optical fiber support 302, an optical fiber 303, a vacuum chamber 304, a photon probe 305, a current amplifier 306, a data acquisition module 307, and a control module 308.

[0063] Existing technology 4

[0064] The dynamic range of beam halo diagnostic methods based on optical imaging is generally limited by factors such as the number of bits in the camera, vignetting effects on the pixel array, and optical diffraction effects. To avoid vignetting effects caused by scattering or coupling of light from the bright beam nucleus to surrounding pixels, the most direct solution is to image extremely low-density beam halo particles while effectively shielding light from the beam nucleus. This has led to the development of beam halo measurement methods based on digital microlens arrays (DMDs) and coronagraphs.

[0065] Digital micromirror devices (DMDs) precisely modulate the image on a mirror array by programming and controlling the deflection angle of each microlens. Typically, the deflection angle of the microlenses in a DMD is 0 degrees and ±12 degrees, and it is widely used in optical projection and laser shaping.

[0066] Figure 4 This is a schematic diagram of another existing halo detection device, such as... Figure 4As shown, it mainly includes: a fluorescent screen or transit radiation target 401, an optical lens module 402, a DMD module 403, a filter module 404, a digital camera 405, and a light collector 406. Its working principle is as follows: When the beam bombards the fluorescent screen or transit radiation target, the forward light generated (which can be fluorescence, transit radiation, diffraction radiation, etc.) enters the optical lens module after passing through the vacuum observation window. The controlled beam then illuminates the DMD surface. Adjusting the deflection state of the DMD microlenses so that when the deflection angle is 0 degrees, the reflected light enters the digital camera sensor; when the deflection angle is -12 degrees or +12 degrees, the reflected light enters the light collector. The optical lens module is mainly used to control the size, scaling, and aberrations of the beam, generally requiring the beam to be focused onto the sensor surface of the digital camera. In halo imaging, the deflection angle of each microlens is controlled by DMD encoding, so that light from the halo portion is reflected onto the camera sensor surface, while light from the beam nucleus portion is reflected into the light collector. This avoids the influence of the bright beam nucleus portion on halo imaging (vignetting effect and optical diffraction effect). Due to the small number of halo particles, it is necessary to reduce the light attenuation of the filter module and increase the camera gain when performing halo imaging to ensure that the signal-to-noise ratio of the camera sensor output signal is within a reasonable range (generally greater than 5).

[0067] Existing technology 5

[0068] Figure 5 This is a schematic diagram of another existing halo detection device, for reference. Figure 5 A coronagraph is a type of astronomical telescope structure that uses a diffuser to shield a central bright spot, allowing observation of faint light signals from the surrounding corona, prominences, and exoplanets. Examples of coronagraph-based halo detection structures include... Figure 5As shown, it mainly includes: fluorescent screen or transit radiation target 501, objective lens module 502, objective lens holder 503, diaphragm module 504, light mask 505, field lens module 506, optical diaphragm (Lyot ​​stop) 507, relay lens 508, filter 509, and digital camera 510. Among them, a fluorescent screen or transit radiation target is used to generate radiation light related to the beam distribution 501; the objective lens module can be a high-purity single lens or cemented lens 502; the septum module 504 is generally a tightly arranged combination of light baffles used to suppress reflected and scattered light; the photomask 505 and the field lens module 506 are located on the image plane of the objective lens module; the photomask 505 is used to shield the bright light in the beam nucleus and form an "annular eclipse" image; the field lens module 506 is used to project a real image of the objective lens aperture at the downstream optical septum 507; the aperture of the optical septum 507 is slightly smaller than the image of the objective lens aperture, which can shield relatively bright edge diffraction light; the relay lens 508 is used to project the shielded image onto the focal plane; the filter 509 is used to adjust the light flux; and the digital camera 510 has a charge-coupled device (CCD) or a complementary metal-oxide-semiconductor sensor. The sensor (CMOS) is located on the focal plane of the relay mirror 508 and is used for image acquisition. Optimizing the optical baffle size can effectively suppress diffraction light caused by the objective lens aperture, reducing it to a normal level of 10. -6 This improves the dynamic range of cycloid measurement to 10. 5 Magnitude.

[0069] There are still many technical problems in the existing technology:

[0070] 1. The beam corona measurement method using wire scanning and scintillators to detect secondary particles has a lower limit of measurement resolution primarily dependent on the background noise level, i.e., the intensity of secondary particles generated in the vacuum tube by beam loss near the scintillator. Limited by the intensity and fluctuations of secondary particles near the high-energy electron accelerator beamline, the dynamic range of this method for measuring beam corona is at most only 10... 4 The magnitude is significant. Furthermore, to improve the resolution of the corona distribution measurement, the wire scanning step size must be minimized; a single complete corona measurement takes 30-60 minutes, resulting in low efficiency.

[0071] 2. The wire-scanning corona detection method using multi-stage particle probe coincidence counting can effectively improve the measurement dynamic range and sensitivity. However, the multi-channel signal coincidence module and ionizing radiation shielding are structurally complex and costly, exceeding the detector itself, making them unsuitable for the multi-site corona measurement requirements of large-scale, high-current particle accelerators. Furthermore, to ensure measurement accuracy, multiple data acquisitions are required at each scanning position to reduce statistical errors, resulting in a time-consuming and inefficient complete corona measurement.

[0072] 3. Fiber scanning beam corona is suitable for high-energy electron accelerators with large lateral dimensions. However, its application in high-current high-energy proton accelerators is limited by factors such as fiber thermal breakage, the requirement for charged particles to move at near the speed of light, and radiation damage.

[0073] (1) The existing fiber scanning beam corona detector uses an optical fiber with a diameter of 1 mm. Assuming a beam current of 10 mA, a pulse width of 100 μs, and a transverse root mean square dimension of 2 mm (Gaussian distribution), the number of single-pulse particles bombarding the fiber when it passes through the beam center is greater than 10. 12 If the local temperature rise caused by energy deposition exceeds the melting point of the optical fiber material, it will cause the optical fiber to break.

[0074] (2) The premise of Cherenkov radiation emission is that the speed of charged particles is greater than the speed of light in the optical fiber. Assuming that the refractive index of the optical fiber medium is 1.5 and the speed of light in the medium is c0 / 1.5, the lower limit of the proton beam energy is 300MeV. Therefore, it cannot be used for low- and medium-energy proton and heavy-ion accelerators.

[0075] (3) According to foreign laboratory test reports, after the total radiation dose reaches 100kGy, the optical properties of the optical fiber will change significantly after the radiation damage caused by the direct interaction between the optical fiber and the high-current proton beam.

[0076] 4. In beam corona measurement using DMD optical spatial modulation, the DMD needs to be encoded according to the beam shape. Typically, multiple concentric ring shapes are used to image each region individually from the beam center outwards, ensuring that the light intensity of each ring region is similar. To achieve complete beam corona distribution measurement, approximately 10-20 ring regions of different shapes are required. Therefore, this method is relatively complex and not suitable for directly performing beam corona measurements.

[0077] 5. A coronagraph is a sophisticated and complex astronomical telescope structure. To suppress stray light introduced by reflection and diffraction effects, extremely high precision is required in the processing, surface roughness, and adjustment of each optical element. The entire system occupies a large space, is difficult to construct, and is expensive.

[0078] This invention proposes a semiconductor strip-type beam corona detection device and method for measuring particle accelerator beam corona in high-radiation environments. The basic principle is as follows: With the development of chip technology and semiconductor precision processing technology, semiconductor sensors have been widely used in particle physics, nuclear physics, and radiation device research. Taking a proton beam as an example, protons first interact with the nuclei or extranuclear electrons of atoms in the semiconductor material, depositing some energy along their flight path and converting it into ionization energy, generating a large number of electron-hole pairs. The remaining energy is dissipated as phonons (lattice vibrations). Compared to other radiation sensors, semiconductor sensors have advantages such as high gain, high integration, and high time resolution. Furthermore, several new radiation-resistant semiconductor sensor materials have been developed; for example, diamond sensors and low-gain avalanche silicon sensors can withstand approximately 10... 16 n eq / cm 2 Irradiation with an equivalent neutron flux is suitable for low-current beam measurements in extreme high-radiation environments. When the semiconductor sensor operates, an electrostatic field is formed in its semiconductor layer under the bias voltages (front and back sides). When charged particles bombard the semiconductor sensor, some energy is lost within the semiconductor layer, generating a large number of electron-hole pairs. These electron-hole pairs move towards both sides of the sensor under the influence of the electrostatic field, forming a current signal output. This output current signal is modulated by an analog preamplifier and then enters the data acquisition system. Typically, the width of the designed semiconductor strip is smaller than the root mean square dimension of the beam. A fixed-step scanning method is used to change the relative position of the semiconductor strip and the beam center. The electrical signal output of the semiconductor strip sensor is recorded at each step. The beam corona distribution can be determined based on the relative position and the corresponding integral intensity change of the output signal at each step. Thanks to the high gain characteristics of semiconductor sensors, this type of detector generally has single-particle sensitivity; however, in the complex electromagnetic environment of particle accelerators, the lower limit of beam corona measurement sensitivity depends on factors such as the spatial electric field coupling of the beam, electromagnetic interference from the spatial coupling of radio frequency components to the signal collection loop, and fluctuations in the intensity of background secondary particles in high-radiation environments.

[0079] As can be seen from the above, there are still many technical problems that have not been solved in the existing technology. The embodiments of the present invention provide a beam corona detection device based on a semiconductor sensor. Figure 6 This is a structural diagram of a beam corona detection device based on a semiconductor sensor provided in an embodiment of the present invention. (Refer to...) Figure 6The beam corona detection device based on a semiconductor sensor provided by the present invention includes: a semiconductor sensor 1, a driving module 2, a data acquisition module 3, and a processing module 4; the first end of the driving module 2 is connected to the semiconductor sensor 1, and the second end of the driving module 2 is connected to the first end of the processing module 4. The driving module 2 is used to move the semiconductor sensor 1 along a first direction X to scan the beam corona A, wherein the first direction X is perpendicular to the transmission direction S of the beam corona A; the second end of the semiconductor sensor 1 is connected to the data acquisition module 3; the semiconductor sensor 1 is used to generate a corresponding radio frequency signal based on the scanning signal of the beam corona A; the second end of the data acquisition module 3 is connected to the second end of the processing module 4, and the data acquisition module 3 is used to receive the radio frequency signal and transmit it to the processing module 4; the processing module 4 calculates the beam corona distribution of the beam corona A based on the radio frequency signal.

[0080] Among them, the semiconductor sensor 1 is a sensor based on semiconductor materials that can convert the distribution information of charged particle beams into analog electrical signals. The semiconductor sensor 1 also includes a semiconductor strip 11, which is a thin semiconductor material, usually made of diamond, silicon carbide or low-gain avalanche silicon sensors.

[0081] Specifically, the embodiment of the present invention provides a beam corona detection device based on a semiconductor sensor, comprising: a semiconductor sensor 1, a driving module 2, a data acquisition module 3, and a processing module 4. The first end of the driving module 2 is connected to the semiconductor sensor 1, and the second end of the driving module 2 is connected to the processing module 4. The beam corona A moves along the S direction (i.e., the transmission direction of the beam corona A). The driving module 2 controls the semiconductor sensor 1 and, in conjunction with it, the semiconductor strip 11 extends into and retracts from the beam track (i.e., displaces along the first direction X) to scan the beam corona A. Simultaneously, it precisely adjusts the positions of the semiconductor sensor 1 and the semiconductor strip 11 relative to the beam center. For example, the driving module 2 can be a displacement stage assembly composed of a linear sliding stage. The second end of the semiconductor sensor 1 is connected to the data acquisition module 3. After the driving module 2 controls the semiconductor sensor 1 to extend into and retract from the beam track to scan the beam corona A, the semiconductor sensor 1 generates a corresponding radio frequency signal based on the scanning signal of the beam corona A (i.e., the distribution information of charged particles in the beam), and transmits this radio frequency signal to the data acquisition module 3. For example, this can be a ceramic printed circuit board (CPCB). Semiconductor sensors on a PCB (Printed Circuit Board) are designed to create an electrostatic field within the semiconductor for electron-hole pair collection. Typically, a metal layer of approximately 10nm-100nm thickness is plated on the sensor's surface (front side, i.e., the particle incident surface). The back of the circuit board usually contains analog circuitry (capacitors, inductors) to maintain the electron-hole collection bias voltage under large signal conditions, preventing electrical signal output saturation. To avoid crosstalk between multiple semiconductor strip sensors due to particle scattering and electrical signal coupling, a single semiconductor strip sensor design can be used. The first end of the data acquisition module 3 is connected to the semiconductor sensor 1, and the second end is connected to the processing module 4. After receiving the radio frequency (RF) signal, the data acquisition module 3 transmits it to the processing module 4. For example, the data acquisition module 3 can be a high-speed digitizer, a real-time spectrum analyzer, etc., all possessing high sampling rates and high precision. The processing module 4 calculates the corona distribution of the beam corona A based on the RF signal emitted by the semiconductor sensor 1. For example, the processing module 4 can be a data server, a personal computer, or a small server, used for motor control, DC bias configuration, data storage and preprocessing, equipment status information monitoring, etc.

[0082] Optionally, the semiconductor sensor 1 includes a semiconductor strip 11, the width of which is 0.1mm-1mm.

[0083] Specifically, the semiconductor sensor 1 includes a semiconductor strip 11. In this embodiment of the invention, the width of the semiconductor strip 11 is required to be much smaller than the root mean square (RMS) size of the beam current. Considering current microelectronic precision processing technology and PCB board soldering technology, the width of the semiconductor strip 11 can be on the order of 0.1 mm to 1 mm. Therefore, this embodiment of the invention is suitable for beam corona measurement with a RMS size on the order of millimeters.

[0084] Optionally, the sampling rate of data acquisition module 3 is 5-10 times the bandwidth of the radio frequency electrical signal.

[0085] Specifically, in this embodiment of the invention, the sampling rate of the data acquisition module 3 is set to be 5-10 times the bandwidth of the radio frequency electrical signal to ensure that the complete signal waveform is recorded.

[0086] The beam corona detection device based on a semiconductor sensor provided in this invention, by utilizing a semiconductor sensor to detect beam corona, not only ensures that the radio frequency electrical signal output by the semiconductor sensor has a sufficiently high signal-to-noise ratio, but also achieves a signal-to-noise ratio greater than 10. 6 The measurement dynamic range.

[0087] Optionally, the beam corona detection device based on a semiconductor sensor provided in this embodiment of the invention further includes a vacuum chamber 5, a support 6, a vacuum coaxial cable 7, and a vacuum feedthrough 8; the first and second ends of the support 6 are both connected to the semiconductor sensor 1, and the third end of the support 6 is connected to the drive module 2. The support 6 is fixedly connected to the semiconductor sensor 1 and drives the semiconductor sensor 1 to scan the beam corona A; the first end of the vacuum coaxial cable 7 is connected to the semiconductor sensor 1, and the second end of the vacuum coaxial cable 7 is connected to the data acquisition module 3 through the vacuum feedthrough 8. The vacuum coaxial cable 7 is used to transmit radio frequency electrical signals to the data acquisition module 3; the semiconductor sensor 1, the support 6, and the vacuum coaxial cable 7 are all located inside the vacuum chamber 5, and the vacuum feedthrough 8 is fixed to the side wall of the vacuum chamber 5.

[0088] The vacuum chamber 5 is a sealed container used for experiments or operations in a vacuum environment. A vacuum system reduces the internal pressure to levels far below atmospheric pressure. The vacuum coaxial cable 7 is a specially designed coaxial cable used to transmit high-frequency signals (e.g., radio frequency signals) in a vacuum environment. For example, it can be a special cable with polyimide (Kapton) insulation. It also includes a connector. Figure 1 (Not shown in the image), for example, the vacuum coaxial cable 7 is used with a connector, which is an MMCX insertion structure, to transmit the radio frequency signal emitted by the semiconductor sensor 1. The vacuum feedthrough 8 is mainly used to transmit signals in the vacuum chamber 5 while maintaining the vacuum seal. The vacuum feedthrough 8 provided in this embodiment of the invention can be multiple independent single-core feedthroughs or multi-core feedthroughs.

[0089] Specifically, the first and second ends of the bracket 6 are connected to the semiconductor sensor 1, and the third end of the bracket 6 is connected to the drive module 2. The bracket 6 is fixedly connected to the semiconductor sensor 1 to clamp the semiconductor sensor 1 and drive the semiconductor sensor 1 to scan the halo A. For example, the bracket 6 can be made of aluminum alloy or stainless steel. The first end of the vacuum coaxial cable 7 is connected to the semiconductor sensor 1, and the second end of the vacuum coaxial cable 7 is connected to the data acquisition module 3 through the vacuum feedthrough 8. The vacuum coaxial cable 7 is used to transmit the radio frequency electrical signal generated by the semiconductor sensor 1 according to the scanning signal of the halo A to the data acquisition module 3. The semiconductor sensor 1, the bracket 6 and the vacuum coaxial cable 7 are all located in the vacuum chamber 5. For example, the vacuum chamber 5 can be a chamber formed by welding stainless steel or titanium alloy to isolate the vacuum of the beam pipe from the atmospheric environment. The vacuum feedthrough 8 is fixed to the side wall of the vacuum chamber 5.

[0090] Optionally, the corona detection device based on a semiconductor sensor provided in this embodiment of the invention further includes a filtering module 9; the first end of the filtering module 9 is connected to the semiconductor sensor 1, and the second end of the filtering module 9 is connected to the data acquisition module 3.

[0091] Specifically, the first end of the filtering module 9 is connected to the semiconductor sensor 1, and the second end of the filtering module 9 is connected to the data acquisition module 3. The filtering module 9 is used to suppress radio frequency interference signals in the radio frequency electrical signals generated by the semiconductor sensor 1, and then transmit them to the data acquisition module 3. For example, the filtering module 9 can be a low-pass filter, a band-pass filter, or a high-pass filter, etc.

[0092] Optionally, it also includes a DC bias 10 and an amplifier module 11; the first end of the DC bias 10 is connected to the semiconductor sensor 1, and the second end of the DC bias 10 is connected to the filter module 9. The DC bias 10 is used to provide a DC bias voltage to the semiconductor sensor 1; the first end of the amplifier module 11 is connected to the filter module 9, and the second end of the amplifier module 11 is connected to the data acquisition module 3. The amplifier module 11 is used to adjust the signal amplitude of the radio frequency signal.

[0093] The DC bias unit 10 achieves the superposition and transmission of DC power supply and high-frequency signal (RF signal) through the synergistic effect of inductor and capacitor, and adds DC bias voltage to prevent the RF port signal from leaking into the power supply system. The amplifier module 11 is used to realize the gain of the RF signal and modulate the RF signal output by the semiconductor sensor 1 to match the signal input range of the data acquisition module 3.

[0094] Specifically, the first end of the DC bias 10 is connected to the semiconductor sensor 1, and the second end of the DC bias 10 is connected to the filter module 9. The DC bias 10 not only provides a DC bias voltage to the radio frequency signal output by the semiconductor sensor 1, but also prevents the radio frequency signal of the radio frequency port from leaking into the power supply system.

[0095] The first end of the amplifier module 11 is connected to the filter module 9, and the second end of the amplifier module 11 is connected to the data acquisition module 3. The amplifier module 11 is used to adjust the amplitude of the radio frequency electrical signal output by the semiconductor sensor 1 to match the signal input range of the data acquisition module 3. For example, the amplifier module 11 can be a variable gain amplifier circuit module.

[0096] Optionally, the corona detection device based on a semiconductor sensor provided in this embodiment of the invention further includes a first power module 12 and a second power module 13; the first end of the first power module 12 is connected to the DC bias 10, the second end of the first power module 12 is connected to the processing module 4, and the first power module 12 is used to provide the operating voltage of the DC bias 10; the first end of the second power module 13 is connected to the amplifier module 11, the second end of the second power module 13 is connected to the processing module 4, and the second power module 13 is used to provide the operating voltage of the amplifier module 11.

[0097] Specifically, the first end of the first power module 12 is connected to the DC bias 10, and the second end of the first power module 12 is connected to the processing module 4. The first power module 12 is used to provide the operating voltage of the DC bias 10. For example, the first power module 12 can be a programmable DC power module.

[0098] The first end of the second power module 13 is connected to the amplifier module 11, and the second end of the second power module 13 is connected to the processing module 4. The second power module 13 is used to provide the operating voltage of the amplifier module 11. For example, the second power module 13 can be a programmable DC power module.

[0099] Optionally, a control module 14 is also included; the first end of the control module 14 is connected to the drive module 2, and the second end of the control module 14 is connected to the processing module 4. The control module 14 is used to control the drive module 2 to drive the semiconductor sensor 1 to scan the halo A and to monitor the position information of the semiconductor sensor 1 in real time.

[0100] Specifically, the beam corona detection device based on a semiconductor sensor provided in this embodiment of the invention further includes a control module 14. The first end of the control module 14 is connected to the drive module 2, and the second end of the control module 14 is connected to the processing module 4. The control module 14 is used to send control commands to the drive module 2 to drive the semiconductor sensor 1 to extend into and withdraw from the beam track to scan the beam corona A. For example, the control module 14 can be a programmable logic controller (PLC) module component and monitor the position information of the semiconductor sensor 1 in real time.

[0101] Optionally, the corona detection device based on a semiconductor sensor provided in this embodiment of the invention further includes a signal transmission cable 15 for transmitting radio frequency electrical signals between the semiconductor sensor 1 and the data acquisition module 3. For example, it can be a coaxial cable or a triaxial cable.

[0102] The beam corona detection device based on a semiconductor sensor provided in this invention has the following requirements and features:

[0103] 1. During the beam flight of the particle accelerator in an ultra-high vacuum environment, the exhaust rate of the components (including PCB boards, connectors, and signal transmission cables 15) within the vacuum chamber 5 must meet the requirements of the ultra-high vacuum environment, typically requiring a thermal exhaust rate of less than 1×10⁻⁶. -11 Pa×m 3 / (s×cm 2 ).

[0104] 2. The PCB board containing semiconductor sensor 1 needs to be equipped with a charging capacitor circuit to quickly charge semiconductor sensor 1 after the sensor signal is output, in order to avoid a drop in DC bias voltage and a decrease in electron-hole collection efficiency. The value of the charging capacitor depends on the expected integrated charge strength of the sensor output electrical signal and the tolerance for DC bias voltage drop. Assuming the maximum integrated charge of the electrical signal is 500nC and the acceptable collection bias voltage drop is 5V, the minimum value of the charging capacitor is 100nF.

[0105] 3. When using a semiconductor sensor to measure the beam nucleus distribution, the high local particle density at the beam center may reduce the electron-hole collection efficiency within the semiconductor sensor, thereby decreasing the charge integral value of the output electrical signal and causing distortion in the measured beam nucleus distribution (generally manifested as a wider beam nucleus distribution). In this case, it can be suppressed by increasing the DC bias voltage applied to the semiconductor sensor, but the maximum bias voltage must be lower than the breakdown voltage.

[0106] 4. The rise time of the output electrical signal of semiconductor sensor 1 is greater than the bundle length and the sensor's response time. The bundle length of modern particle accelerators can be on the order of femtoseconds to nanoseconds; the signal response time of semiconductor sensor 1 is closely related to the electron-hole pair migration rate and the sensor thickness, and the response time of diamond and low-gain avalanche silicon sensors may be less than 1 nanosecond. Therefore, the bandwidth of vacuum coaxial cable 7 and connector, vacuum feedthrough 8, signal transmission cable 15, DC bias 10, amplifier module 11, and data acquisition module 3 needs to be determined based on the expected signal rise time, typically requiring a bandwidth on the order of GHz.

[0107] 5. To avoid radio frequency interference generated by high-power radio frequency devices in the particle accelerator, the signal transmission cable 15 should have a sufficiently high electromagnetic shielding effectiveness (greater than 90dB).

[0108] 6. Vacuum coaxial cable 7. Vacuum feedthrough 8. and signal transmission cable 15 must maintain a 50-ohm impedance match to avoid signal distortion and interference due to electrical signal reflection.

[0109] 7. It is necessary to pre-calibrate the position information of semiconductor sensor 1 and the drive motor when it coincides with the geometric center of the beam channel.

[0110] Based on the same inventive concept Figure 7 This is a flowchart of a beam corona detection method based on a semiconductor sensor provided in an embodiment of the present invention. (Refer to...) Figure 7 This invention provides a beam corona detection method based on a semiconductor sensor, using any of the semiconductor sensor-based beam corona detection devices described in the above embodiments. The beam corona measurement method includes:

[0111] S101, Preset the initial and final positions of the semiconductor sensor for measuring the corona.

[0112] Specifically, the initial position X of the semiconductor sensor is preset. min and final position X max Based on the characteristics of the semiconductor sensor's sensitivity and linearity, combined with the size of the corona, the possible coverage area of ​​the corona can be determined through numerical simulation, thereby enabling the scanning of the corona.

[0113] Optionally, before step S101, the method further includes:

[0114] The DC bias voltage added to the DC biaser by the first power supply module can be set from 100V to 500V; the output voltage added to the amplifier module by the second power supply module can be set to 12V.

[0115] S102, control the semiconductor sensor to move to the initial position and scan the halo.

[0116] Specifically, the control module sends a movement command to the drive module, which then controls the semiconductor sensor and the support to move the semiconductor sensor to the initial position X. min And scan the halo.

[0117] Optionally, after moving the semiconductor sensor to the initial position X min Then, adjust the signal amplifier gain to ensure that the signal amplitude input to the data acquisition module is within an acceptable range.

[0118] S103. Acquire the radio frequency electrical signal from the semiconductor sensor.

[0119] Specifically, the semiconductor sensor at the initial position X min The beam halo is scanned and a corresponding radio frequency (RF) signal is generated. The data acquisition module acquires the RF signal output by the semiconductor sensor.

[0120] S104. Generate the particle beam intensity corresponding to the initial position of the semiconductor sensor based on the radio frequency electrical signal.

[0121] Specifically, in step S102 above, the semiconductor sensor is moved to the initial position by the driving module, and the radio frequency signal of the semiconductor sensor at the initial position is acquired. The particle beam intensity corresponding to the semiconductor sensor at the initial position is generated based on the radio frequency signal. S105, the semiconductor sensor is controlled to perform multiple step displacements along the first direction based on the initial position, and the process returns to the step of acquiring the radio frequency signal of the semiconductor sensor until the average value and standard deviation of the M groups of charge integrals are obtained.

[0122] Specifically, the drive module controls the semiconductor sensor to perform multiple step-by-step displacements along the first direction X from the initial position to scan the beam halo. The data acquisition module sequentially collects the beam current intensity and amplifier gain corresponding to each movement position, normalizes the beam current intensity and amplifier gain, and calculates the corresponding charge integral average and standard deviation. Based on M sets of beam current intensity and M sets of amplifier gain, M sets of charge integral average and M sets of standard deviation are calculated, where M is the number of displacements of the semiconductor sensor to the final position. The first direction is perpendicular to the beam halo transmission direction. For example, when M is 5, the semiconductor sensor moves a total of 5 times from the initial position to the final position, and the average and standard deviation of the charge integral are collected 5 times.

[0123] S106. Determine the corona distribution based on the average value and standard deviation of the charge integrals of group M.

[0124] Specifically, the halo distribution is determined based on the average value and standard deviation of multiple sets of charge integrals collected in step S105. For example, the halo distribution is determined based on the average value and standard deviation of the five charge integrals collected in step S105.

[0125] The beam corona detection method based on a semiconductor sensor provided in this embodiment of the invention can achieve the same technical effect as the beam corona detection device based on a semiconductor sensor provided in the above-described embodiment of the invention, and will not be described again here.

[0126] Optional, Figure 8 This is a flowchart of another beam corona detection method based on a semiconductor sensor provided in an embodiment of the present invention, for reference. Figure 8 The process of generating corresponding beam current intensity and amplifier gain based on radio frequency electrical signals also includes:

[0127] S201. Preset the initial and final positions of the semiconductor sensor measuring the corona.

[0128] S202, Control the semiconductor sensor to move to the initial position and scan the halo.

[0129] S203. Acquire the radio frequency electrical signal from the semiconductor sensor.

[0130] S204. Repeatedly collect M×N radio frequency electrical signals corresponding to M positions of the semiconductor sensor N times.

[0131] Specifically, in order to reduce statistical errors during the measurement process, in this embodiment of the invention, radio frequency electrical signals are repeatedly collected for each displacement of the semiconductor sensor, that is, the M×N radio frequency electrical signals corresponding to the M positions of the semiconductor sensor are collected N times repeatedly. Here, N is recommended to be a positive integer greater than or equal to 10. N can be adjusted according to actual needs, and this embodiment of the invention does not limit it.

[0132] S205. Obtain the N beam current intensities and amplifier gain corresponding to each position of the semiconductor sensor.

[0133] Specifically, the N beam current intensities and amplifier gains corresponding to the semiconductor sensor at each position are obtained. For example, the semiconductor sensor is displaced 5 times from the initial position to the final position, i.e., M is 5. Assuming that the acquisition is repeated 10 times, i.e., N is 10, the 10 beam current intensities and amplifier gains corresponding to the semiconductor sensor at five positions are obtained.

[0134] S206. Preprocess M×N radio frequency electrical signals to generate the average value and standard deviation of the charge integral of the M radio frequency electrical signals.

[0135] Specifically, the M×N radio frequency electrical signals obtained in step S204 above are preprocessed to generate the average value and standard deviation of the charge integral of the M radio frequency electrical signals. The preprocessing includes normalizing the M×N radio frequency electrical signals.

[0136] S207. Determine the particle beam intensity at each semiconductor sensor location based on the average value and standard deviation of the M charge integrals.

[0137] Specifically, the particle beam intensity of the semiconductor sensor at the M locations is determined based on the average value and standard deviation of the charge integrals of the M radio frequency electrical signals calculated in step S205 above.

[0138] Optionally, by determining the particle beam intensity at M locations of the semiconductor sensor in steps S205 to S207 above, the beam halo distribution information can be obtained.

[0139] Optionally, after obtaining the distribution information of the halo, the following may also be included:

[0140] The semiconductor sensor is placed in its original position, i.e., the rear limit position of the control module, by the drive module.

[0141] The beam corona detection device and method based on a semiconductor sensor provided in this invention can achieve the following technical effects:

[0142] 1. Due to the low ionization energy of semiconductor materials (e.g., silicon and diamond have ionization energies of 3.64 eV and 13.6 eV, respectively), and the generally high energy deposition of high-energy charged particles in sensors (on the order of keV-MeV), the number of electron-hole pairs generated can be 3-4 orders of magnitude higher than the number of incident charged particles. Assuming an electron-hole pair collection efficiency of 10%–100%, the signal gain could be 100–10000 times. Furthermore, the signal gain generated by the avalanche effect in low-gain avalanche silicon sensors is 10–50 times. Therefore, the output signal of semiconductor sensors has a sufficiently high signal-to-noise ratio, and the background noise mainly originates from electromagnetic interference in the signal loop.

[0143] 2. Experiments conducted on an electron accelerator with a beam energy of 1.3 GeV show that, under conditions of a bundle charge of 1.1 nC and a beam RMS size of approximately 2 mm, the dynamic range of the one-dimensional beam halo distribution observed using a single-crystal diamond strip sensor with a width of 0.1 mm, a thickness of 0.5 mm, and a length of 10 mm is greater than 6 orders of magnitude. Figure 9 This is a schematic diagram of the test results of a beam corona detection device based on a semiconductor sensor provided in an embodiment of the present invention, as shown below. Figure 9As shown, the measurement sensitivity of this experiment is about 100 electrons. The background noise mainly comes from the electromagnetic field generated by the beam's own radiation field and the interaction between the beam and the irregular inner wall of the vacuum chamber, which is coupled to the output electrical signal circuit of the diamond sensor.

[0144] The specific embodiments described above do not constitute a limitation on the scope of protection of this invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this invention should be included within the scope of protection of this invention.

Claims

1. A beam corona detection method based on a semiconductor sensor, characterized in that, A beam corona detection device employing a semiconductor sensor is used for beam corona detection, and the beam corona detection method includes: The initial and final positions of the semiconductor sensor for measuring the beam corona are preset; The semiconductor sensor is controlled to move to the initial position and scan the halo beam; Acquire the radio frequency electrical signal of the semiconductor sensor; The particle beam intensity corresponding to the semiconductor sensor at the initial position is generated based on the radio frequency electrical signal; Based on the initial position, the semiconductor sensor is controlled to perform multiple step displacements along the first direction, and then returns to the step of acquiring the radio frequency electrical signal of the semiconductor sensor until the average value and standard deviation of M groups of charge integrals are obtained. The corona distribution is determined based on the average value and standard deviation of the charge integrals in group M; where M is the number of displacements required for the semiconductor sensor to move to the final position; and the first direction is perpendicular to the transmission direction of the corona.

2. The beam corona detection method based on a semiconductor sensor according to claim 1, characterized in that, The step of generating the particle beam intensity corresponding to the semiconductor sensor at the initial position based on the radio frequency electrical signal further includes: The semiconductor sensor is repeatedly sampled at M locations N times. N radio frequency electrical signals; Obtain the N beam current intensities and amplifier gains corresponding to each position of the semiconductor sensor; The M×N radio frequency electrical signals are preprocessed to generate the average value and standard deviation of the charge integral of the M radio frequency electrical signals; where N is a positive integer greater than or equal to 10; The particle beam intensity at the location of the semiconductor sensor is determined based on the average and standard deviation of the M charge integrals.

3. The beam corona detection method based on a semiconductor sensor according to claim 1 or 2, characterized in that, The corona detection device includes: a semiconductor sensor, a driving module, a data acquisition module, and a processing module; The first end of the driving module is connected to the semiconductor sensor, and the second end of the driving module is connected to the first end of the processing module. The driving module is used to move the semiconductor sensor along a first direction to scan the corona beam. The first direction is perpendicular to the transmission direction of the corona beam. The second end of the semiconductor sensor is connected to the data acquisition module; the semiconductor sensor is used to generate a corresponding radio frequency electrical signal based on the scanning signal of the beam corona; The second end of the data acquisition module is connected to the second end of the processing module, and the data acquisition module is used to receive the radio frequency electrical signal and transmit it to the processing module. The processing module calculates the corona distribution of the beam based on the radio frequency electrical signal.

4. The beam corona detection method based on a semiconductor sensor according to claim 3, characterized in that, The corona detection device also includes a vacuum chamber, a support frame, a vacuum coaxial cable, and a vacuum feedthrough. The first and second ends of the bracket are both connected to the semiconductor sensor, and the third end of the bracket is connected to the drive module. The bracket is fixedly connected to the semiconductor sensor and drives the semiconductor sensor to scan the beam halo. The first end of the vacuum coaxial cable is connected to the semiconductor sensor, and the second end of the vacuum coaxial cable is connected to the data acquisition module through the vacuum feedthrough. The vacuum coaxial cable is used to transmit the radio frequency electrical signal to the data acquisition module. The semiconductor sensor, the bracket, and the vacuum coaxial cable are all located inside the vacuum chamber, and the vacuum feedthrough is fixed to the side wall of the vacuum chamber.

5. The beam corona detection method based on a semiconductor sensor according to claim 3, characterized in that, The corona detection device also includes a filtering module; The first end of the filtering module is connected to the semiconductor sensor, and the second end of the filtering module is connected to the data acquisition module.

6. The beam corona detection method based on a semiconductor sensor according to claim 5, characterized in that, The corona detection device also includes a DC biaser and an amplifier module; The first terminal of the DC bias is connected to the semiconductor sensor, and the second terminal of the DC bias is connected to the filter module. The DC bias is used to provide a DC bias voltage to the semiconductor sensor. The first end of the amplifier module is connected to the filter module, and the second end of the amplifier module is connected to the data acquisition module. The amplifier module is used to adjust the signal amplitude of the radio frequency electrical signal.

7. The beam corona detection method based on a semiconductor sensor according to claim 6, characterized in that, The corona detection device also includes a first power module and a second power module. The first terminal of the first power module is connected to the DC bias, and the second terminal of the first power module is connected to the processing module. The first power module is used to provide the operating voltage of the DC bias. The first end of the second power module is connected to the amplifier module, and the second end of the second power module is connected to the processing module. The second power module is used to provide the operating voltage of the amplifier module.

8. The beam corona detection method based on a semiconductor sensor according to claim 3, characterized in that, The halo detection device also includes a control module; The first end of the control module is connected to the drive module, and the second end of the control module is connected to the processing module. The control module is used to control the drive module to drive the semiconductor sensor to scan the halo beam and monitor the position information of the semiconductor sensor in real time.

9. The beam corona detection method based on a semiconductor sensor according to claim 3, characterized in that, The semiconductor sensor includes a semiconductor strip with a width of 0.1 mm to 1 mm.

10. The beam corona detection method based on a semiconductor sensor according to claim 3, characterized in that, The sampling rate of the data acquisition module is 5-10 times the bandwidth of the radio frequency signal.

Images