Dielectric resonator, dielectric filter and communication equipment

Abstract

The embodiment of the invention provides a dielectric resonator, a dielectric filter and communication equipment, relates to the technical field of communication, and is used for improving the quality factor of the dielectric resonator. The dielectric resonator includes a first dielectric block, a second dielectric block, a first conductive layer, and a second conductive layer. The first dielectric block is provided with a mounting hole, and the second dielectric block is located in the mounting hole; the dielectric constant of the second dielectric block is greater than that of the first dielectric block. The first conductive layer is located on at least part of the surface, except the surface opposite to the second dielectric block, of the surface of the first dielectric block. The second conductive layer is located on at least part of the surface, except the surface opposite to the first dielectric block, of the surface of the second dielectric block; the second conductive layer is coupled to the first conductive layer. The dielectric resonator is applied to the dielectric filter, and the Q value of the dielectric filter is improved.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a dielectric resonator, a dielectric filter and a communication device. Background Art

[0002] With the introduction of the carbon neutrality strategy, the power consumption requirements for base stations have been further improved. As a key device in base stations, the loss of filters greatly affects the loss of base stations. Dielectric filters are widely used in base stations due to their excellent performance and size advantages.

[0003] Dielectric filters generally include single-mode dielectric filters and multi-mode dielectric filters (for example, dual-mode dielectric filters or triple-mode dielectric filters, etc.). Dielectric filters are generally composed of dielectric resonators. Among them, although the multi-mode dielectric filter has a higher quality factor (Q value), it is large in size and difficult to reduce in size, and it is difficult to adapt to the current trend of miniaturization of base stations. The volume of the single-mode dielectric filter can adapt to the trend of miniaturization of base stations, but it is difficult to increase its Q value. Based on this, how to provide a dielectric filter with a high Q value has become a problem to be solved in this field. Summary of the invention

[0004] The embodiments of the present application provide a dielectric resonator, a dielectric filter and a communication device, which are used to improve the quality factor of the dielectric resonator and provide a dielectric filter with a high Q value.

[0005] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0006] In a first aspect, a dielectric resonator is provided, the dielectric resonator comprising a first dielectric block and a second dielectric block, a first conductive layer, and a second conductive layer. The first dielectric block has a mounting hole, the second dielectric block is located in the mounting hole; the dielectric constant of the second dielectric block is greater than the dielectric constant of the first dielectric block. The first conductive layer is located in a surface of the first dielectric block: at least a portion of the surface except a surface opposite to the second dielectric block. The second conductive layer is located in a surface of the second dielectric block: at least a portion of the surface except a surface opposite to the first dielectric block; the second conductive layer is coupled to the first conductive layer.

[0007] In the dielectric resonator provided in the embodiment of the present application, the first dielectric block includes a mounting hole, the second dielectric block is located in the mounting hole, and the dielectric constant of the second dielectric block is greater than the dielectric constant of the first dielectric block. Since the higher the dielectric constant, the better the material's binding property to the electric field, during the operation of the dielectric resonator, the electric field in the dielectric resonator can be concentrated in the second dielectric block, thereby generating an induced current in the second dielectric block. Since the dielectric material itself has the characteristic of a high Q value, the impedance of the second dielectric block is relatively small, and in the process of the induced current flowing through the second dielectric block, the loss generated by the dielectric resonator 300 can be relatively small, thereby effectively improving the Q value of the dielectric resonator 300.

[0008] Through simulation tests, when the height or diameter (or length and width) is increased, the Q value of the dielectric resonator provided in the embodiment of the present application can produce a large change, that is, the Q value can be effectively improved when the height and diameter (or length and width) are adjusted, and the difficulty of improving the Q value of the dielectric resonator provided in the embodiment of the present application can be relatively small. In this way, the dielectric resonator provided in the embodiment of the present application can not only have a higher Q value, but also can further obtain a higher Q value by adjusting the size of the dielectric resonator, so that the dielectric resonator can be used in scenes with medium and high power or higher loss requirements, effectively improving the applicability of the dielectric resonator.

[0009] In some embodiments, the first dielectric block includes an annular portion, which is disposed around the circumference of the second dielectric block and has a gap between the first dielectric block and the second dielectric block.

[0010] The embodiment of the present application sets a gap between the annular portion and the second dielectric block. On the one hand, it is convenient to place the second dielectric block in the mounting hole (annular portion) to avoid the situation where the second dielectric block cannot be placed in the mounting hole (annular portion) due to process errors. On the other hand, the gap can be used to adjust the high-order modes of the dielectric resonator and improve the high-order modes of the dielectric resonator, thereby facilitating the elimination of interference frequency bands such as double frequency and triple frequency, which is beneficial to improving the performance of the dielectric resonator.

[0011] In some embodiments, the dielectric resonator further includes a fixing structure located in the gap and connecting the annular portion and the second dielectric block.

[0012] In the embodiment of the present application, a fixed structure is provided in the gap, and the fixed structure connects the annular portion and the second dielectric block, so that the relative position relationship between the annular portion and the second dielectric block can be fixed by using the fixed structure, thereby avoiding the situation in which the second dielectric block and the annular portion are damaged due to relative movement between the second dielectric block and the annular portion, thereby affecting the normal operation of the dielectric resonator.

[0013] In some embodiments, the fixing structure includes an adhesive layer and a third conductive layer. The adhesive layer adheres the opposite surfaces of the annular portion and the second dielectric block; the material of the adhesive layer is an insulating material. The third conductive layer is located on the surface of the adhesive layer: except for the surface connecting the annular portion and the second dielectric block, the third conductive layer connects the first conductive layer and the second conductive layer.

[0014] The fixed structure provided in the embodiment of the present application includes an adhesive layer and a third conductive layer, so that the annular portion can be connected to the second dielectric block by using the adhesive layer, thereby avoiding the second dielectric block and the annular portion being damaged due to relative movement between the second dielectric block and the annular portion, thereby affecting the normal operation of the dielectric resonator. At the same time, the first conductive layer and the second conductive layer can be connected by using the third conductive layer, which is beneficial to simplifying the structure of the dielectric resonator and reducing costs.

[0015] In some embodiments, the dielectric constant of the adhesive layer is smaller than the dielectric constant of the first dielectric block.

[0016] In the embodiment of the present application, the dielectric constant of the bonding layer is smaller than the dielectric constant of the first dielectric block, and the dielectric constant of the first dielectric block is smaller than the dielectric constant of the second dielectric block. Therefore, the difference in dielectric constant between the bonding layer and the second dielectric block can be larger, and the second dielectric block is in direct contact with the bonding layer. During the operation of the dielectric resonator, the high-order modes of the dielectric resonator can be higher, which is beneficial to further filter interference frequencies such as the second and third times of the resonant frequency, thereby helping to improve the performance of the dielectric resonator.

[0017] In some embodiments, at at least one end along the extension direction of the mounting hole, the adhesive layer is coplanar with the annular portion and the second dielectric block.

[0018] In the dielectric resonator provided in the embodiment of the present application, at least at one end along the extension direction of the mounting hole, the adhesive layer is coplanar with the annular portion and the second dielectric block, thereby facilitating the coupling between the third conductive layer on the adhesive layer and the first conductive layer on the annular portion, and the second conductive layer on the second dielectric block, thereby facilitating the simplification of the structure of the dielectric resonator.

[0019] In some embodiments, a blind hole is provided at at least one end of the second dielectric block along the extension direction of the mounting hole.

[0020] In the embodiment of the present application, a blind hole is provided at one end of the second dielectric block along the extension direction of the mounting hole, so that after the dielectric resonator is prepared, the resonant frequency of the dielectric resonator can be fine-tuned by using the blind hole, which is beneficial to improving the yield of the dielectric resonator. For example, the resonant frequency of the dielectric resonator can be fine-tuned by grinding the second conductive layer on the bottom wall of the blind hole.

[0021] In some embodiments, the dielectric resonator further includes a first conductive cover plate, which is located on one side of the second dielectric block along an extension direction of the mounting hole, and the first conductive cover plate connects the first conductive layer and the second conductive layer.

[0022] In the dielectric resonator provided in the embodiment of the present application, a first conductive cover plate is arranged on one side of the second dielectric block along the extension direction of the mounting hole, so that the first conductive cover plate can be used to realize electrical connection between the first conductive layer and the second conductive layer, and at the same time, the relative position relationship between the first dielectric block and the second dielectric block is fixed, which is beneficial to improving the structural stability and yield of the dielectric resonator provided in the embodiment of the present application.

[0023] In some embodiments, when a blind hole is provided at one end of the second dielectric block close to the first conductive cover plate, the first conductive cover plate includes a first opening, and the first opening exposes the blind hole, so that the frequency of the dielectric resonator can be adjusted later using the blind hole.

[0024] In some embodiments, the dielectric resonator further includes a second conductive cover plate, which is located on the other side of the second dielectric block along the extension direction of the mounting hole, and the second conductive cover plate connects the first conductive layer and the second conductive layer.

[0025] In the dielectric resonator provided in the embodiment of the present application, a second conductive cover plate is arranged on the other side of the second dielectric block along the extension direction of the mounting hole, so that the first conductive cover plate and the second conductive cover plate can be used together to realize the electrical connection between the first conductive layer and the second conductive layer, and at the same time, the relative position relationship between the first dielectric block and the second dielectric block can be fixed, which is beneficial to further improve the structural stability and yield of the dielectric resonator provided in the embodiment of the present application.

[0026] In some embodiments, when a blind hole is provided at one end of the second dielectric block close to the second conductive cover plate, the second conductive cover plate includes a second opening, and the second opening exposes the blind hole, so that the frequency of the dielectric resonator 300 can be adjusted later using the blind hole.

[0027] In some embodiments, the first dielectric block further includes a block portion connected to the annular portion, and the block portion covers an opening at one end of the mounting hole.

[0028] In the embodiment of the present application, although the mounting hole is a blind hole, since a conductive layer is no longer formed on the hole wall of the mounting hole, it is not easy to cause the problem of large losses caused by current flowing through the metallized blind hole in the related art. In the dielectric resonator provided in the embodiment of the present application, the second conductive block located in the mounting hole and having a higher dielectric constant can concentrate more of the electric field in the dielectric resonator inside the second dielectric block, thereby generating an induced current in the second dielectric. Since the dielectric material itself has the characteristic of a high Q value, the impedance of the second dielectric block is relatively small. In the process of the induced current flowing through the second dielectric block, the loss generated by the dielectric resonator can be relatively small, thereby effectively improving the Q value of the dielectric resonator.

[0029] In some embodiments, the axis of the mounting hole coincides with the axis of the second dielectric block.

[0030] In this way, the second dielectric block can be located at the center of the mounting hole, and more electric fields can be gathered in the second dielectric block, thereby further reducing the loss of the dielectric resonator and improving the Q value of the dielectric resonator. At the same time, the second dielectric block is located at the center of the mounting hole, which is also conducive to making the magnetic field distribution outside the first dielectric block more uniform, thereby improving the performance of the dielectric resonator.

[0031] In a second aspect, a dielectric filter is provided, wherein the dielectric filter comprises a dielectric resonator as described in any of the above embodiments.

[0032] In some embodiments, the dielectric filter may be applied in a dynamic antenna unit.

[0033] In some embodiments, the dielectric filter may be applied in a radio remote unit.

[0034] In a third aspect, a communication device is provided, the electronic device comprising the dielectric filter as described in any one of the above embodiments. The chip is located on a circuit board and is electrically connected to the circuit board.

[0035] Among them, the technical effects brought about by any design method in the second aspect and the third aspect can refer to the technical effects brought about by different design methods in the first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the present application, the following is a brief introduction to the drawings required for use in some embodiments of the present application. Obviously, the drawings described below are only drawings of some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not intended to limit the actual size of the product involved in the embodiments of the present application, the actual process of the method, the actual timing of the signal, etc.

[0037] Figure 1 A schematic diagram of the structure of a dielectric resonator provided in an embodiment of the present application;

[0038] Figure 2 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0039] Figure 3 for Figure 2 a side view of the provided dielectric resonator;

[0040] Figure 4 A curve diagram showing the relationship between a resonance frequency and a depth provided in an embodiment of the present application;

[0041] Figure 5 A schematic diagram of the structure of a dielectric resonator provided in an embodiment of the present application;

[0042] Figure 6 A curve diagram showing the relationship between the Q value and the diameter provided in an embodiment of the present application;

[0043] Figure 7 A curve diagram showing the relationship between a Q value and a height provided in an embodiment of the present application;

[0044] Figure 8 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0045] Fig. 9 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0046] Fig.10 A schematic diagram of a three-dimensional structure of a dielectric resonator provided in an embodiment of the present application;

[0047] Fig.11 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0048] Fig.12 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0049] Fig.13 A schematic diagram of the three-dimensional structure of another dielectric resonator provided in an embodiment of the present application;

[0050] Fig.14 A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0051] Fig.15 A schematic diagram of a three-dimensional structure of another dielectric resonator provided in an embodiment of the present application;

[0052] Fig.16A schematic diagram of the structure of another dielectric resonator provided in an embodiment of the present application;

[0053] Fig.17 A schematic diagram of the structure of a dynamic antenna unit provided in an embodiment of the present application;

[0054] Fig.18 A schematic diagram of the structure of a radio remote unit provided in an embodiment of the present application. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0056] In the following, in the embodiments of the present application, the terms "first", "second", etc. are only used for convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, "plurality" means two or more.

[0057] In the embodiments of the present application, "upper", "lower", "left" and "right" are not limited to being defined relative to the positions of the components schematically placed in the drawings. It should be understood that these directional terms may be relative concepts. They are used for relative description and clarification, and may change accordingly according to the changes in the positions of the components in the drawings.

[0058] In the embodiments of the present application, unless the context requires otherwise, throughout the specification and claims, the term "including" is interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.

[0059] When describing some embodiments, the term "coupled" and its derivative expressions may be used. For example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. However, the term "coupled" may also refer to two or more components that are not in direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0060] In the embodiments of the present application, exemplary embodiments are described with reference to cross-sectional views and / or plan views and / or equivalent circuit diagrams as idealized exemplary drawings. In the drawings, the thickness of the layers and regions is magnified for clarity. Therefore, it is conceivable that the shape changes relative to the drawings are caused by, for example, manufacturing technology and / or tolerances. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations caused by, for example, manufacturing. For example, an etched region shown as a rectangle will generally have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0061] Figure 1 A multimode dielectric resonator 100 is shown, and the multimode dielectric resonator 100 includes a dielectric block 101, and no loading structure (such as a blind hole, etc.) is provided on the dielectric block 101. At this time, the multimode dielectric resonator 100 is rectangular, and a coordinate system is established at the vertices of the multimode dielectric resonator. The size of the multimode dielectric resonator 100 in the Z-axis direction (that is, the height) is a, the size of the multimode dielectric resonator 100 in the X-axis direction (that is, the width) is a, and the size of the multimode dielectric resonator in the Y-axis direction (that is, the length) is b.

[0062] The calculation formula of the resonant frequency of the multimode dielectric resonator 100 can be: Among them, f 101 is the resonant frequency, μ is the magnetic permeability, ε r is the relative dielectric constant, and ε0 is the absolute dielectric constant.

[0063] The quality factor (Q value) of the multimode dielectric resonator 100 is relatively high. For example, according to simulation tests, when the dielectric constant of the dielectric block 101 is 20, the height and width of the dielectric block 101 are both 12 mm, and the length is 15 mm, the Q value of the multimode dielectric resonator 100 can be as high as 2500.

[0064] However, the resonant frequency of the multimode dielectric resonator 100 is determined by the height (or width) and the length of the multimode dielectric resonator 100 by the dielectric constant. The resonant frequency of the multimode dielectric resonator 100 also determines the height (or width) and length of the multimode dielectric resonator 100, which makes it difficult for the multimode dielectric resonator 100 to be miniaturized. Moreover, its resonant frequency is greatly affected by the appearance size, and the frequency is more sensitive to the change of the appearance size, which makes the appearance requirements of the multimode dielectric resonator 100 higher and the preparation difficulty greater.

[0065] Figure 2The schematic diagram of the structure of a single-mode dielectric resonator 200 is shown. The single-mode dielectric resonator 200 comprises a dielectric block 201, and a metalized blind hole 202 is provided on the dielectric block 201.

[0066] The single-mode dielectric resonator 200 can be miniaturized by providing a metalized blind hole 202 on the dielectric block 201. The metalized blind hole mentioned here can be understood as a blind hole whose surface or hole wall is covered with a metal layer, or the metal layer covers the hole wall of the blind hole. Specifically, the capacitance between the bottom of the metalized blind hole 202 and the lower surface of the dielectric block 201 can be used to achieve frequency compression, thereby achieving miniaturization.

[0067] Figure 3 for Figure 2 The side view of the single-mode dielectric resonator 200 shown in FIG. 2 shows a side view of the single-mode dielectric resonator 200. Wherein, h represents the depth of the metalized blind hole 202, and Dh represents the height of the dielectric block 201. By adjusting the depth h of the metalized blind hole 202, the magnitude of the resonant frequency can be adjusted. For example, Figure 4 Figure 2 shows a schematic diagram of the resonant frequency F changing with depth h (in millimeters). Figure 4 It can be seen that the greater the depth h of the metalized blind hole 202 is, the lower the resonance frequency F is. That is, the closer the depth h of the blind hole is to the height Dh of the dielectric block, the lower the resonance frequency is.

[0068] Although the single-mode dielectric resonator 200 can adjust the resonant frequency by adjusting the depth of the metalized blind hole 202 to achieve a wider frequency band application, and the single-mode dielectric resonator 200 can also adapt to the miniaturization of communication equipment such as base stations, etc. However, the upper limit range of the Q value of the single-mode dielectric resonator 200 is low, and it is difficult to improve the Q. When it can cope with higher power working scenarios, there are problems such as high heat generation, and it is difficult to cope with scenarios with higher loss requirements.

[0069] Figure 3 The figure shows the current distribution of the single-mode dielectric resonator 200 provided by the related art during operation. The dotted arrow represents the induced current, and the solid arrow represents the conducted current. The inventor of the present application has found through research that during the operation of the single-mode dielectric resonator 200, the conducted current flowing through the side wall of the metallized blind hole is relatively large. However, due to the limitation of the preparation process, the uniformity of the distribution of the metal layer in the metallized blind hole is poor, and the conductivity is low, which results in that when the current flows through the metallized blind hole, the impedance generated by the single-mode dielectric resonator 200 is also relatively large, thereby affecting the Q value of the dielectric resonator.

[0070] Based on this, an embodiment of the present application provides a dielectric resonator. Figure 5 A schematic diagram of the structure of a dielectric resonator 300 provided in an embodiment of the present application.

[0071] like Figure 5As shown, the dielectric resonator 300 may include a first dielectric block 10, a second dielectric block 20, a first conductive layer 30, and a second conductive layer 40. The first dielectric block 10 has a mounting hole 11, and the second dielectric block 20 is located in the mounting hole 11. The dielectric constant of the second dielectric block 20 is greater than the dielectric constant of the first dielectric block 10.

[0072] The first conductive layer 30 is located in the surface of the first dielectric block 10: at least a portion of the surface except the surface opposite to the second dielectric block 20. The second conductive layer 40 is located in the surface of the second dielectric block 20: at least a portion of the surface except the surface opposite to the first dielectric block 10. The second conductive layer 40 is coupled to the first conductive layer 30.

[0073] Exemplarily, the dielectric constant of the first dielectric block 10 may be 10-20, and the dielectric constant of the second dielectric block 20 may be 45-65.

[0074] Here, “the second dielectric block 20 is located in the mounting hole 11 ” can mean that the second dielectric block 20 is completely located in the mounting hole 11 , or a portion of the second dielectric block 20 is located in the mounting hole 11 , and another portion of the second dielectric block 20 extends out of the mounting hole 11 .

[0075] Exemplarily, the first conductive layer 30 may cover the entire surface of the first dielectric block 10 except the surface opposite to the second dielectric block 20. Alternatively, the first conductive layer 30 may cover a portion of the surface of the first dielectric block 10 except the surface opposite to the second dielectric block 20.

[0076] Similarly, the second conductive layer 40 may cover the entire surface of the second dielectric block 20 except the surface opposite to the first dielectric block 10. Alternatively, the second conductive layer 40 may cover a portion of the surface of the second dielectric block 20 except the surface opposite to the first dielectric block 10.

[0077] The above “the second conductive layer 40 is coupled to the first conductive layer 30 ” includes both the case where the second conductive layer 40 is in direct contact with the first conductive layer 30 and the case where the second conductive layer 40 is in indirect contact with the first conductive layer 30 .

[0078] Exemplarily, the material of the first conductive layer 30 and the second conductive layer 40 may include metal, such as silver, copper, etc.

[0079] In some possible implementations, the material of the first conductive layer 30 may be the same as that of the second conductive layer 40. In this case, the first conductive layer 30 and the second conductive layer 40 may be prepared simultaneously, which is beneficial to simplifying the preparation process of the dielectric resonator 300, reducing costs, and improving preparation efficiency.

[0080] In some other possible implementations, the material of the first conductive layer 30 and the material of the second conductive layer 40 may also be different.

[0081] In the embodiment of the present application, there is no restriction on the thickness of the first conductive layer 30 and the thickness of the second conductive layer 40, and they can be designed according to actual needs. The thickness of the first conductive layer 30 is also the film thickness of the first conductive layer 30, that is, the distance from the surface of the first conductive layer 30 away from the first dielectric block 10 to the surface of the first conductive layer 30 close to the first dielectric block 10. Similarly, the thickness of the second conductive layer 40 is also the film thickness of the second conductive layer 40, that is, the distance from the surface of the second conductive layer 40 away from the second dielectric block 20 to the surface of the second conductive layer 40 close to the second dielectric block 20.

[0082] Exemplarily, the thickness of the first conductive layer 30 may be 2 microns to 7 microns. For example, the thickness of the first conductive layer 30 may be 2 microns, 3 microns, 4 microns, 5 microns, 6 microns or 7 microns. In this way, the thickness of the first conductive layer 30 will not be too small, so that the first conductive layer 30 is not easy to fall off from the first dielectric block 10, and the first conductive layer 30 is not easy to be lost due to wear, which effectively ensures the performance of the dielectric resonator 300. At the same time, the thickness of the first conductive layer 30 will not be too large, which is conducive to reducing costs.

[0083] Exemplarily, the thickness of the second conductive layer 40 may be 2 microns to 7 microns. For example, the thickness of the second conductive layer 40 may be 2 microns, 3 microns, 4 microns, 5 microns, 6 microns or 7 microns. In this way, the thickness of the second conductive layer 40 will not be too small, so that the second conductive layer 40 is not easy to fall off from the second dielectric block 20, and the first conductive layer 30 is not easy to be lost due to wear, which effectively ensures the performance of the dielectric resonator 300. At the same time, the thickness of the second conductive layer 40 will not be too large, which is conducive to reducing costs.

[0084] Figure 5 The diagram shows the current distribution of the dielectric resonator 300 provided in the embodiment of the present application during operation, wherein the dashed arrows also represent the induced current, and the solid arrows also represent the conducted current. Figure 5 As shown, the conduction current is transmitted on the first conductive layer 30 and the second conductive layer 40 .

[0085] In the dielectric resonator 300 provided in the embodiment of the present application, the first dielectric block 10 includes a mounting hole 11, the second dielectric block 20 is located in the mounting hole 11, and the dielectric constant of the second dielectric block 20 is greater than the dielectric constant of the first dielectric block 10. Since the higher the dielectric constant, the better the binding property of the material to the electric field, during the operation of the dielectric resonator 300, the electric field in the dielectric resonator 300 can be concentrated in the second dielectric block 20, thereby generating an induced current in the second dielectric block 20. Since the dielectric material itself has the characteristic of a high Q value, the impedance of the second dielectric block 20 is relatively small. In the process of the induced current flowing through the second dielectric block 20, compared with the solution provided in the related art, the loss generated by the dielectric resonator 300 can be relatively small, thereby effectively improving the Q value of the dielectric resonator 300.

[0086] Taking the dielectric resonator provided in the embodiment of the present application as a whole being a cylinder, and the dielectric resonator provided in the related art as a whole being a cylinder as an example, Figure 6 The diagram illustrates a relationship curve between the Q value of the dielectric resonator provided in the embodiment of the present application and the diameter of the dielectric resonator (shown as a solid line), and a relationship curve between the Q value of the dielectric resonator provided in the related art and the diameter of the dielectric resonator (shown as a dotted line). Figure 7 The diagram illustrates a relationship curve between the Q value of the dielectric resonator provided in the embodiment of the present application and the height of the dielectric resonator (shown as a solid line), and a relationship curve between the Q value of the dielectric resonator provided in the related art and the height of the dielectric resonator (shown as a dotted line).

[0087] analyze Figure 6 It can be seen that, under the condition of the same diameter, the Q value of the dielectric resonator provided by the embodiment of the present application is higher than the Q value of the dielectric resonator provided by the related art. Moreover, under the condition of increasing the same diameter, the change in the Q value of the dielectric resonator provided by the embodiment of the present application is also higher than the change in the Q value of the dielectric resonator provided by the related art.

[0088] Similarly, analysis Figure 7 It can be seen that, under the same height, the Q value of the dielectric resonator provided by the embodiment of the present application is higher than the Q value of the dielectric resonator provided by the related art. Under the same height, the change in the Q value of the dielectric resonator provided by the embodiment of the present application is also higher than the change in the Q value of the dielectric resonator provided by the related art.

[0089] It can be seen that when the height or the diameter (or the length and width) is increased, the Q value of the dielectric resonator 300 provided in the embodiment of the present application can produce a large change, that is, the Q value can be effectively improved when the height and the diameter (or the length and width) are adjusted, and the difficulty of improving the Q value of the dielectric resonator 300 provided in the embodiment of the present application can be relatively small. In this way, the dielectric resonator 300 provided in the embodiment of the present application can not only have a higher Q value, but also can further obtain a higher Q value by adjusting the size of the dielectric resonator 300, so that the dielectric resonator 300 can be used in scenes with medium and high power or higher loss requirements, effectively improving the applicability of the dielectric resonator 300.

[0090] In some embodiments, the second dielectric block 20 may be cylindrical. At this time, due to the symmetric structure of the second dielectric block 20, the electric field distribution in the second dielectric block 20 may be more uniform, which is beneficial to further reduce the loss and improve the Q value.

[0091] In some embodiments, Figure 5 As shown, the first dielectric block 10 includes an annular portion 12 , which is disposed around the second dielectric block 20 , and a gap W exists between the annular portion 12 and the second dielectric block 20 .

[0092] Of course, the cross-sectional shape of the annular portion 12 is not limited to a circular ring, a square ring, etc. The annular portion 12 can be any structure that can be maintained in a circle, or a structure with a through hole. It can be understood that when the first dielectric block 10 includes the annular portion 12, the mounting hole 11 serves as a through hole of the annular portion 12.

[0093] In some examples, the annular portion 12 may be a hollow cylinder.

[0094] There is a gap between the annular portion 12 and the second dielectric block 20. The gap may exist everywhere between the annular portion 12 and the second dielectric block 20, or the annular portion 12 and the second dielectric block 20 may contact one part of the opposite surfaces while there is a gap between the other parts of the opposite surfaces.

[0095] In the embodiment of the present application, there is no limitation on the size of the gap W, which can be designed according to actual needs. For example, at different positions of the dielectric resonator 300, the size of the gap W between the annular portion 12 and the second dielectric block 20 can be different.

[0096] In the embodiment of the present application, a gap W is set between the annular portion 12 and the second dielectric block 20. On the one hand, it is convenient to place the second dielectric block 20 in the mounting hole 11 (annular portion 12) to avoid the situation where the second dielectric block 20 cannot be placed in the mounting hole 11 (annular portion 12) due to process errors. On the other hand, the gap W can be used to adjust the high-order modes of the dielectric resonator 300, thereby improving the high-order modes of the dielectric resonator 300, thereby facilitating the elimination of interference frequency bands such as double frequency and triple frequency, which is beneficial to improving the performance of the dielectric resonator 300.

[0097] In the case where the first dielectric block 10 includes only the annular portion 12 , the dielectric resonator 300 may constitute TM (transverse magnetic) mode resonance.

[0098] In some embodiments, Figure 8 As shown, the dielectric resonator 300 further includes a fixing structure 50 , which is located in the gap W and connects the annular portion 12 and the second dielectric block 20 .

[0099] In some examples, such as Figure 8 As shown, the fixing structure 50 may fill up the entire gap W. In other examples, the fixing structure 50 may only occupy a portion of the gap W.

[0100] In the embodiment of the present application, a fixed structure 50 is provided in the gap W, and the fixed structure 50 connects the annular portion 12 and the second dielectric block 20, so that the fixed structure 50 can be used to fix the relative position relationship between the annular portion 12 and the second dielectric block 20, thereby avoiding the situation in which the second dielectric block 20 and the annular portion 12 are damaged due to relative movement between the second dielectric block 20 and the annular portion 12, thereby affecting the normal operation of the dielectric resonator 300.

[0101] In some embodiments, Fig. 9 As shown, the fixing structure 50 may include an adhesive layer 51 and a third conductive layer 52 .

[0102] The bonding layer 51 bonds the opposite surfaces of the annular portion 12 and the second dielectric block 20. The bonding layer 51 is made of an insulating material. The third conductive layer 52 is located on the surface of the bonding layer 51: except for the surface connecting the annular portion 12 and the second dielectric block 20, the third conductive layer 52 connects the first conductive layer 30 and the second conductive layer 40.

[0103] In some examples, the dielectric constant of the adhesive layer 51 is less than the dielectric constant of the first dielectric block 10 .

[0104] For example, the dielectric constant of the adhesive layer 51 may be less than 10. For example, the dielectric constant of the adhesive layer 51 may be 1, 2, 4, 6, or the like.

[0105] In some examples, the adhesive layer 51 may include an inorganic material, such as inorganic glue, etc. In other examples, the adhesive layer 51 may include an organic material, such as resin, etc.

[0106] In the embodiment of the present application, the dielectric constant of the adhesive layer 51 is smaller than the dielectric constant of the first dielectric block 10, and the dielectric constant of the first dielectric block 10 is smaller than the dielectric constant of the second dielectric block 20. Therefore, the difference in dielectric constant between the adhesive layer 51 and the second dielectric block 20 can be relatively large, and the second dielectric block 20 is in direct contact with the adhesive layer 51. During the operation of the dielectric resonator 300, the high-order modes of the dielectric resonator 300 can be relatively high, which is beneficial to further filter interference frequencies such as the second and third harmonic frequencies of the resonant frequency, thereby helping to improve the performance of the dielectric resonator 300.

[0107] In some examples, the thickness of the adhesive layer 51 may be 0.5 mm to 1 mm. For example, the thickness of the adhesive layer 51 may be 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm, 1 mm, etc.

[0108] Such arrangement, on the one hand, ensures that the thickness of the adhesive layer 51 will not be too small, thereby effectively improving the high-order modes of the dielectric resonator 300 and improving the connection stability between the annular portion 12 and the second dielectric block 20; on the other hand, ensures that the thickness of the adhesive layer 51 will not be too large, thereby affecting the structural arrangement of the first dielectric block 10 and the second dielectric block 20 in the dielectric resonator 300, which is beneficial to ensuring the structural stability of the dielectric resonator 300.

[0109] In some examples, the material of the third conductive layer 52 may include metal, such as silver, copper, etc.

[0110] In some examples, the material of the third conductive layer 52 may be the same as that of the first conductive layer 30. In this case, the third conductive layer 52 and the first conductive layer 30 may be prepared simultaneously, which is beneficial to simplify the preparation process of the dielectric resonator 300, reduce costs, and improve preparation efficiency.

[0111] In other examples, the material of the third conductive layer 52 may be the same as that of the second conductive layer 40. In this case, the third conductive layer 52 and the second conductive layer 40 may be prepared simultaneously, which is beneficial to simplify the preparation process of the dielectric resonator 300, reduce costs, and improve preparation efficiency.

[0112] In some other examples, the material of the third conductive layer 52 may be the same as that of the first conductive layer 30, and the material of the third conductive layer 52 may be the same as that of the second conductive layer 40. In this case, the first conductive layer 30, the second conductive layer 40, and the third conductive layer 52 may be prepared at the same time, which is beneficial to further simplify the preparation process of the dielectric resonator 300, reduce costs, and improve preparation efficiency.

[0113] In the embodiment of the present application, there is no limitation on the thickness of the third conductive layer 52 and it can be designed according to actual needs.

[0114] The fixed structure 50 provided in the embodiment of the present application includes an adhesive layer 51 and a third conductive layer 52, so that the adhesive layer 51 can be used to connect the annular portion 12 to the second dielectric block 20, thereby avoiding the relative movement between the second dielectric block 20 and the annular portion 12, which may cause damage to the second dielectric block and the annular portion and affect the normal operation of the dielectric resonator. At the same time, the third conductive layer 52 can be used to connect the first conductive layer 30 and the second conductive layer 40, which is beneficial to simplify the structure of the dielectric resonator 300 and reduce costs.

[0115] In other embodiments, the fixing structure 50 may be an insulating device. For example, the fixing structure 50 may include a polytetrafluoroethylene (PTFE) ring. Of course, the fixing structure 50 may also include the adhesive layer 51 alone without the third conductive layer 52.

[0116] In some embodiments, Fig. 9 As shown, at least at one end along the extension direction M of the mounting hole 11 , the adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20 . Fig. 9 In the figure, an example is taken in which the adhesive layer 51, the surface of the annular portion 12, and the surface of the second dielectric block 20 are located in the same plane N at least at one end along the extending direction M of the mounting hole 11.

[0117] It is understandable that the “adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20 ” mentioned here is not limited to a plane, and the surfaces of the adhesive layer 51 and the annular portion 12 and the second dielectric block 20 may be continuously located on the same arc surface or curved surface.

[0118] Among them, "at least one end along the extension direction M of the mounting hole 11, the adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20", includes both the situation that at one end along the extension direction M of the mounting hole 11, the adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20, while at the other end along the extension direction M of the mounting hole 11, the adhesive layer 51 is not coplanar with the annular portion 12 and the second dielectric block 20, and also includes the situation that at both ends along the extension direction M of the mounting hole 11, the adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20.

[0119] In the dielectric resonator 300 provided in the embodiment of the present application, at least at one end along the extension direction M of the mounting hole 11, the adhesive layer 51 is coplanar with the annular portion 12 and the second dielectric block 20, so that the third conductive layer 52 located on the adhesive layer 51 can be conveniently coupled with the first conductive layer 30 located on the annular portion 12 and the second conductive layer 40 on the second dielectric block 20, thereby helping to simplify the structure of the dielectric resonator 300.

[0120] Among them, when the mounting hole 11 is a through hole, the extension direction M of the mounting hole 11 is the direction from one end opening of the mounting hole 11 to the other end opening; when the mounting hole 11 is a blind hole, the extension direction M of the mounting hole 11 is the direction from the bottom wall of the mounting hole 11 to the opening of the mounting hole 11.

[0121] In some embodiments, Fig. 9 As shown, the axis R of the mounting hole 11 coincides with the axis E of the second dielectric block 20 .

[0122] In some examples, the mounting hole 11 may be a circular hole, in which case the axis of the mounting hole 11 passes through the center of the cross section of the mounting hole 11 and is perpendicular to the cross section of the mounting hole 11. In other examples, the cross section of the mounting hole 11 may be a polygon, in which case the axis of the mounting hole 11 may pass through the center of the circumscribed circle (or inscribed circle) of the polygon and be perpendicular to the cross section.

[0123] In some examples, the second dielectric block 20 may be a cylinder, in which case the axis of the second dielectric block 20 passes through the center of the cross section of the cylinder and is perpendicular to the cross section of the cylinder. In other examples, the cross section of the second dielectric block 20 may be a polygon, in which case the axis of the second dielectric block 20 may pass through the center of the circumscribed circle (or inscribed circle) of the polygon and is perpendicular to the cross section.

[0124] In this way, the second dielectric block 20 can be located at the center of the mounting hole 11, and more electric fields can be gathered in the second dielectric block 20, thereby further reducing the loss of the dielectric resonator 300 and improving the Q value of the dielectric resonator 300. At the same time, the second dielectric block 20 is located at the center of the mounting hole 11, which is also conducive to making the magnetic field distribution outside the first dielectric block 10 more uniform, thereby improving the performance of the dielectric resonator 300.

[0125] In some embodiments, see Fig.10 The second dielectric block 20 is provided with a blind hole 21 at at least one end along the extension direction M of the mounting hole 11. It can be understood that in order to more clearly show the blind hole 21, Fig.10 The first conductive layer and the second conductive layer are not shown.

[0126] In the embodiment of the present application, there is no limitation on the shape, size and depth of the blind hole 21, and the design can be made according to actual needs. In some possible designs, the second dielectric block 20 can be provided with one blind hole 21 at one end along the extension direction M of the mounting hole 11. In other possible designs, the second dielectric block 20 can also be provided with multiple blind holes 21 at one end along the extension direction M of the mounting hole 11.

[0127] In some examples, the second dielectric block 20 may have a blind hole 21 at one end along the extension direction M of the mounting hole 11 and no blind hole 21 at the other end. In other examples, the second dielectric block 20 may have blind holes 21 at both ends along the extension direction M of the mounting hole 11.

[0128] Fig.11 FIG. 3 is a schematic diagram of a structure of a dielectric resonator 300 provided in an embodiment of the present application. Fig.11 As shown, when the second dielectric block 20 is provided with a blind hole 21 at one end along the extension direction M of the mounting hole 11 , the second conductive layer 40 also covers the side wall and the bottom wall of the blind hole 21 .

[0129] In the embodiment of the present application, a blind hole 21 is provided at one end of the second dielectric block 20 along the extension direction M of the mounting hole 11, so that after the dielectric resonator 300 is prepared, the blind hole 21 can be used to fine-tune the resonant frequency of the dielectric resonator 300, which is beneficial to improving the yield of the dielectric resonator 300. For example, the resonant frequency of the dielectric resonator 300 can be fine-tuned by grinding the second conductive layer 40 on the bottom wall of the blind hole 21.

[0130] In some embodiments, Figure 5 and Fig.12 As shown, the dielectric resonator 300 further includes a first conductive cover plate 60 , which is located at one side of the second dielectric block 20 along the extension direction M of the mounting hole 11 , and connects the first conductive layer 30 and the second conductive layer 40 .

[0131] Exemplarily, the material of the first conductive cover plate 60 may include metal, such as iron, etc. In the embodiment of the present application, the thickness and size of the first conductive cover plate 60 are not limited, as long as the first conductive cover plate 60 can connect the first conductive layer 30 and the second conductive layer 40 .

[0132] In some examples, the first conductive cover plate 60 and the first conductive layer 30 may be connected by welding, and the first conductive cover plate 60 and the second conductive layer 40 may be connected by welding.

[0133] In the dielectric resonator 300 provided in the embodiment of the present application, a first conductive cover plate 60 is provided on one side of the second dielectric block 20 along the extension direction M of the mounting hole 11, so that the first conductive cover plate 60 can be used to realize electrical connection between the first conductive layer 30 and the second conductive layer 40, and at the same time, the relative position relationship between the first dielectric block 10 and the second dielectric block 20 is fixed, which is beneficial to improve the structural stability and yield of the dielectric resonator 300 provided in the embodiment of the present application.

[0134] Fig.13 FIG. 3 is a schematic diagram of a disassembled dielectric resonator 300 provided in an embodiment of the present application, wherein the first conductive layer and the second conductive layer are not shown. Fig.13 As shown, when the first conductive cover plate 60 is provided on one side of the second dielectric block 20 along the extension direction M of the mounting hole 11, the fixing structure 50 may no longer be provided in the gap W between the annular portion 12 and the second dielectric block, thereby simplifying the structure of the dielectric resonator 300 and reducing the cost.

[0135] In some examples, such as Fig.12 As shown, when the blind hole 21 is provided at one end of the second dielectric block 20 close to the first conductive cover plate 60, the first conductive cover plate 60 includes a first opening 61, and the first opening 61 exposes the blind hole 21. In this way, the frequency of the dielectric resonator 300 can be adjusted by using the blind hole 21 later.

[0136] In the embodiment of the present application, there is no limitation on the shape and size of the first opening 61, as long as the blind hole 21 can be exposed. For example, the first opening 61 may be a circular opening.

[0137] In other embodiments, Figure 5 and Fig.14 As shown, the dielectric resonator 300 further includes a second conductive cover plate 70 , which is located at the other side of the second dielectric block 20 along the extension direction M of the mounting hole 11 , and connects the first conductive layer 30 and the second conductive layer 40 .

[0138] Exemplarily, the material of the second conductive cover plate 70 may include metal, such as iron, etc. In the embodiment of the present application, the thickness and size of the second conductive cover plate 70 are not limited, as long as the second conductive cover plate 70 can connect the first conductive layer 30 and the second conductive layer 40 .

[0139] In some examples, the first conductive cover plate 60 and the second conductive cover plate 70 may be made of the same material. Thus, the first conductive cover plate 60 and the second conductive cover plate 70 have the same resistance value, which is beneficial to reduce the loss of current when flowing through the first conductive cover plate 60 and the second conductive cover plate 70.

[0140] In some examples, the second conductive cover plate 70 and the first conductive layer 30 may be connected by welding, and the second conductive cover plate 70 and the second conductive layer 40 may be connected by welding.

[0141] In the dielectric resonator 300 provided in the embodiment of the present application, a second conductive cover plate 70 is provided on the other side of the second dielectric block 20 along the extension direction M of the mounting hole 11, so that the first conductive cover plate 60 and the second conductive cover plate 70 can be used together to realize the electrical connection between the first conductive layer 30 and the second conductive layer 40, and at the same time, the relative position relationship between the first dielectric block 10 and the second dielectric block 20 is fixed, which is beneficial to further improve the structural stability and yield of the dielectric resonator 300 provided in the embodiment of the present application.

[0142] In some examples, such as Fig.14 As shown, when the blind hole 21 is provided at one end of the second dielectric block 20 close to the second conductive cover plate 70, the second conductive cover plate 70 includes a second opening 71, and the second opening 71 exposes the blind hole 21. In this way, the frequency of the dielectric resonator 300 can be adjusted by using the blind hole 21 later.

[0143] In the embodiment of the present application, there is no limitation on the shape and size of the second opening 71, as long as the blind hole 21 can be exposed. For example, the second opening 71 may be a circular opening.

[0144] Fig.15 FIG. 3 is a schematic diagram of a disassembled dielectric resonator 300 provided in an embodiment of the present application, wherein the first conductive layer and the second conductive layer are not shown. Fig.15 As shown, a first conductive cover plate 60 is provided on one side of the second dielectric block 20 along the extension direction M of the mounting hole 11. When a second conductive cover plate 70 is provided on the other side, a fixing structure 50 may no longer be provided in the gap W between the annular portion 12 and the second dielectric block, thereby simplifying the structure of the dielectric resonator 300 and reducing the cost.

[0145] In some embodiments, Fig.16 As shown, the first dielectric block 10 further includes a block portion 13 connected to the annular portion 12, and the block portion 13 covers an opening at one end of the mounting hole 11. At this time, the mounting hole 11 is a blind hole.

[0146] Exemplarily, the annular portion 12 and the block portion 13 may be an integral whole, that is, the annular portion 12 and the block portion 13 are made of the same material, and there is no separation interface between the annular portion 12 and the block portion 13 .

[0147] In some examples, along the extension direction M of the mounting hole 11, the size of the annular portion 12 may be larger than the size of the block portion 13. In other examples, along the extension direction M of the mounting hole 11, the size of the annular portion 12 may be equal to the size of the block portion 13. In still other examples, along the extension direction M of the mounting hole 11, the size of the annular portion 12 may be smaller than the size of the block portion 13.

[0148] In the case where the first dielectric block 10 includes the block portion 13 , the first conductive layer 30 may also be located on a surface of the block portion 13 other than a surface opposing the second dielectric block 20 .

[0149] In the embodiment of the present application, although the mounting hole is a blind hole, since a conductive layer is no longer formed on the hole wall of the mounting hole, it is not easy to cause the problem of large losses caused by current flowing through the metallized blind hole in the related art. In the dielectric resonator 300 provided in the embodiment of the present application, the second dielectric block 20 located in the mounting hole 11 and having a higher dielectric constant can concentrate more of the electric field in the dielectric resonator 300 inside the second dielectric block 20, thereby generating an induced current in the second dielectric block 20. Since the dielectric material itself has the characteristic of a high Q value, the impedance of the second dielectric block 20 is relatively small. In the process of the induced current flowing through the second dielectric block 20, the loss generated by the dielectric resonator 300 can be relatively small, thereby effectively improving the Q value of the dielectric resonator 300.

[0150] An embodiment of the present application provides a dielectric filter, which includes a dielectric resonator 300 provided in any of the above embodiments.

[0151] The dielectric filter provided in the embodiment of the present application can be applied to an active antenna unit (AAU) as a filter of a radio frequency unit. The dielectric filter can also be applied to a radio remote unit (RRU) to form a duplexer unit.

[0152] Among them, Fig.17As shown, the radio frequency unit RU of the dynamic antenna unit AAU may include a CPRI (Common Public Radio Interface) interface and a digital intermediate frequency module, an ADC (analog to digital converter) and a DAC (digital to analog converter) module, a PA (power amplifier) ​​module and a filter. Among them, the ADC and DAC modules are used to convert the digital baseband signal sent by the CPRI interface and the digital intermediate frequency module into an RF (Radio Frequency) small signal and send it to the PA module. The PA module amplifies the RF small signal to form a radio frequency signal and transmits it to the filter. The radio frequency signal is filtered by the filter and sent by the antenna AU to other base stations or user equipment. The dynamic antenna unit AAU also includes a power supply to power the above-mentioned radio frequency unit.

[0153] like Fig.18 As shown, the radio remote unit RRU may include a high-speed interface module, a TRX signal processing unit, a power amplifier unit, a duplexer unit, an antenna and a power supply module. Among them, the high-speed interface module is used to connect to the baseband unit BBU. The signal output by the baseband unit BBU can be transmitted to the antenna in turn through the TRX signal processing unit, the power amplifier unit, and the duplexer unit, and then to other base stations or user equipment. The signal received by the antenna can be transmitted to the baseband unit BBU through the duplexer unit, the power amplifier unit and the TRX signal processing unit in turn. Fig.18 In the figure, TX stands for sending data, RX stands for receiving data, PA stands for power amplifier, and LNA stands for low noise power amplifier. The power supply module supplies power to the above multiple units.

[0154] It can be understood that the technical effect that can be achieved by the dielectric filter provided in the embodiment of the present application is the same as the technical effect that can be achieved by the dielectric resonator provided in any of the above embodiments.

[0155] An embodiment of the present application further provides a communication device, which includes the above-mentioned dielectric filter (or dielectric resonator 300).

[0156] It should be understood that the communication device may be a network device, such as any device with wireless transceiver function. The device includes but is not limited to: evolved Node B (eNB), Radio Network Controller (RNC), Node B (NB), Base Station Controller (BSC), Base Transceiver Station (BTS), Home Base Station (e.g., Home evolved NodeB, or Home Node B, HNB), Base Band Unit (BBU), Access Point (AP) in Wireless Fidelity (WIFI) system, wireless relay node, wireless backhaul node, transmission point (TP) or transmission and reception point (RP), etc., and can also be a gNB in ​​5G, such as NR, system, or a transmission point (TRP or TP), one or a group of (including multiple antenna panels) antenna panels of a base station in a 5G system, or a network node constituting a gNB or a transmission point, such as a baseband unit (BBU), or a distributed unit (DU), etc.

[0157] The communication device may also be a terminal device. The terminal device may also be referred to as user equipment (UE), access terminal, user unit, user station, mobile station, mobile station, remote station, remote terminal, mobile device, user terminal, terminal, wireless communication device, user agent or user device. The terminal device in the embodiment of the present application may be a mobile phone, a tablet computer (Pad), a computer with wireless transceiver function, a virtual reality (VR) terminal device, an augmented reality (AR) terminal device, a wireless terminal in industrial control, a wireless terminal in self-driving, a wireless terminal in remote medical, a wireless terminal in smart grid, a wireless terminal in transportation safety, a wireless terminal in smart city, a wireless terminal in smart home, etc. The embodiment of the present application does not limit the application scenario.

[0158] It can be understood that the technical effect that can be achieved by the communication device provided in the embodiment of the present application is the same as the technical effect that can be achieved by the dielectric resonator provided in any of the above embodiments.

[0159] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0160] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A dielectric resonator, characterized in that: include: a first dielectric block and a second dielectric block, wherein the first dielectric block has a mounting hole, and the second dielectric block is located in the mounting hole; The dielectric constant of the second dielectric block is greater than the dielectric constant of the first dielectric block; A first conductive layer is located on the surface of the first dielectric block: at least a portion of the surface except for a surface opposite to the second dielectric block; A second conductive layer is located on the surface of the second dielectric block: at least a portion of the surface except the surface opposite to the first dielectric block; the second conductive layer is coupled to the first conductive layer.

2. The dielectric resonator according to claim 1, characterized in that The first dielectric block includes an annular portion, which is disposed around the circumference of the second dielectric block and has a gap between the first dielectric block and the second dielectric block.

3. The dielectric resonator according to claim 2, characterized in that Also includes: The fixing structure is located in the gap and connects the annular portion and the second dielectric block.

4. The dielectric resonator according to claim 3, characterized in that The fixed structure comprises: An adhesive layer, the adhesive layer is used to bond the annular portion and the opposing surfaces of the second dielectric block; the adhesive layer is made of insulating material; A third conductive layer is located on the surface of the adhesive layer except for the surface connecting the annular portion and the second dielectric block, and the third conductive layer connects the first conductive layer and the second conductive layer.

5. The dielectric resonator according to claim 4, characterized in that The dielectric constant of the adhesive layer is smaller than the dielectric constant of the first dielectric block.

6. The dielectric resonator according to claim 4, characterized in that At at least one end along the extending direction of the mounting hole, the adhesive layer is coplanar with the annular portion and the second dielectric block.

7. The dielectric resonator according to any one of claims 1 to 6, characterized in that: The second dielectric block is provided with a blind hole at at least one end along the extending direction of the mounting hole.

8. The dielectric resonator according to any one of claims 1 to 7, characterized in that: The dielectric resonator further includes a first conductive cover plate, which is located on one side of the second dielectric block along the extension direction of the mounting hole, and connects the first conductive layer and the second conductive layer.

9. The dielectric resonator according to claim 8, characterized in that In the case that a blind hole is provided at one end of the second dielectric block close to the first conductive cover plate, the first conductive cover plate includes a first opening, and the first opening exposes the blind hole.

10. The dielectric resonator according to claim 8 or 9, characterized in that: The dielectric resonator further includes a second conductive cover plate, which is located on the other side of the second dielectric block along the extension direction of the mounting hole, and the second conductive cover plate connects the first conductive layer and the second conductive layer.

11. The dielectric resonator according to claim 10, characterized in that In the case that a blind hole is provided at one end of the second dielectric block close to the second conductive cover plate, the second conductive cover plate includes a second opening, and the second opening exposes the blind hole.

12. The dielectric resonator according to any one of claims 2 to 9, characterized in that: The first dielectric block further includes a block portion connected to the annular portion, and the block portion covers an opening at one end of the mounting hole.

13. The dielectric resonator according to any one of claims 1 to 12, characterized in that: The axis of the mounting hole coincides with the axis of the second dielectric block.

14. A dielectric filter, characterized in that: include: A plurality of dielectric resonators according to any one of claims 1 to 13.

15. A communication device, characterized in that: Comprising the dielectric filter as claimed in claim 14.

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