Single-mode semiconductor microcavity laser

Abstract

This disclosure provides a single-mode semiconductor microcavity laser, comprising: an N-type substrate; a whispering-gallery microcavity located on the N-type substrate, the area of ​​the whispering-gallery microcavity being smaller than the area of ​​the N-type substrate; and a waveguide disposed on the N-type substrate and connected to a preset output terminal of the whispering-gallery microcavity. The single-mode semiconductor microcavity laser of this disclosure enables the manipulation of the mode field distribution of light within the microcavity, ultimately achieving stable and controllable single-mode lasing, meeting the requirements of coherent optical communication systems for light sources, thereby realizing high-capacity, long-distance data transmission.

Description

Technical Field

[0001] This disclosure relates to the fields of optical communication and semiconductor laser technology, specifically to a single-mode semiconductor microcavity laser. Background Technology

[0002] Optical communication, as a modern communication technology, boasts advantages such as faster transmission speed, larger bandwidth, and better anti-interference performance, and has gradually replaced traditional electrical communication technologies for widespread application. Semiconductor lasers, as the light source of optical communication systems, are one of the most important components. Single-mode lasers, due to their good coherence and strong anti-interference capabilities, are an ideal light source for coherent optical communication, effectively meeting the demands of modern communication for high-capacity, long-distance data transmission. Currently, there are three main approaches to realizing single-mode lasers: The first is to achieve single-mode lasing by reducing the size of the resonant cavity. Since the free spectral range (FSR) is inversely proportional to the length of the laser resonant cavity, reducing the cavity size ensures that only one high-Q mode exists within the gain spectrum, thus achieving single-mode lasing. However, this method still struggles to prevent adjacent mode lasing for lasers with high gain bandwidth. The second approach is to introduce a periodic grating structure into the resonant cavity for mode selection, thereby achieving single-mode lasing. However, this laser structure is complex and requires sophisticated fabrication processes. The third method utilizes the vernier effect of the coupled cavity structure to couple two cavities of different structures or sizes together for mode selection to achieve single-mode lasing. However, this structure increases the size of the laser cavity. Summary of the Invention

[0003] (a) Technical problems to be solved

[0004] In view of the above problems, this disclosure provides a single-mode semiconductor microcavity laser to at least partially solve the technical problems of poor stability, complex structure, high fabrication requirements and large laser cavity size of current single-mode lasers.

[0005] (II) Technical Solution

[0006] This disclosure provides a single-mode semiconductor microcavity laser, comprising: an N-type substrate; a whispering-gallery microcavity located on the N-type substrate, wherein the area of ​​the whispering-gallery microcavity is smaller than the area of ​​the N-type substrate; and a waveguide disposed on the N-type substrate and connected to a preset output terminal of the whispering-gallery microcavity.

[0007] According to an embodiment of this disclosure, the whispering-gallery microcavity includes: an N-type confinement layer disposed on the upper surface of the N-type substrate; an active layer disposed on the upper surface of the N-type confinement layer; and a P-type confinement layer disposed on the upper surface of the active layer.

[0008] According to an embodiment of this disclosure, the sounding wall microcavity is formed by the intersection and combination of two arc-sided quadrilateral parts obtained by deforming a square.

[0009] According to an embodiment of this disclosure, the waveguide includes a first end face and a second end face; wherein the first end face is connected to a preset output end of the whispering-gallery microcavity, and the second end face is a cleavage surface located at the other end of the waveguide connected to the whispering-gallery microcavity.

[0010] According to an embodiment of this disclosure, the waveguide is a strip waveguide.

[0011] According to an embodiment of this disclosure, the original square side lengths and arc deformations of the two arc-edged quadrilaterals are not equal, and their centers are a certain distance apart.

[0012] According to embodiments of this disclosure, it further includes: an N-side electrode disposed on the lower surface of the N-type substrate, having the same shape and size as the N-type substrate; and a P-side electrode disposed on the upper surface of the whispering-gallery microcavity, having the same shape and size as the whispering-gallery microcavity.

[0013] According to an embodiment of this disclosure, the height of the whispering-gallery microcavity is the same as the height of the waveguide.

[0014] According to an embodiment of this disclosure, the sidewalls of the whispering wall microcavity are wrapped with a filling material, the refractive index of which is less than that of the whispering wall microcavity.

[0015] According to embodiments of this disclosure, the deformation of the two curved sides of the two curved quadrilaterals is... and They are respectively:

[0016]

[0017]

[0018] Where a1, a2, r1 and r2 represent the side length and radius of the original square of the two arc-side quadrilaterals, respectively.

[0019] (III) Beneficial Effects

[0020] The single-mode semiconductor microcavity laser disclosed herein, through optimized design of the shape and structure of the whispering-gallery microcavity, enables the modulation of the light mode field distribution within the microcavity, ultimately achieving stable and controllable single-mode lasing, meeting the requirements of coherent optical communication systems for light sources, thereby realizing high-capacity, long-distance data transmission. Attached Figure Description

[0021] To gain a more complete understanding of this disclosure and its advantages, reference will now be made to the following description taken in conjunction with the accompanying drawings, wherein:

[0022] Figure 1A schematic three-dimensional structural diagram of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure is shown.

[0023] Figure 2 A schematic diagram illustrating a planar structure of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure is shown.

[0024] Figure 3 The diagram schematically illustrates the correspondence between the whispering-gallery microcavity mode quality factor (Q value) and the characteristic wavelength of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure.

[0025] Figure 4 The schematic diagram illustrates the mode field distribution of the fundamental mode and the first-order mode of a whispering-gallery microcavity according to an embodiment of the present disclosure;

[0026] Figure 5 The diagram schematically illustrates the quality factors of the fundamental mode and the first-order mode of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure, as well as the correspondence between the mode spacing of the fundamental mode and the first-order mode and the arc edge deformation.

[0027] Figure 6 The schematic diagram illustrates the spectrum of an injection current of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure, which is continuously varied from 0 to 100 mA in 1 mA intervals.

[0028] Figure 7 The schematic diagram illustrates detailed spectra of a single-mode semiconductor microcavity laser according to embodiments of the present disclosure at injection currents of 30 mA, 50 mA, and 70 mA.

[0029] Figure 8 The illustration schematically shows the change in side-mode suppression ratio of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure as the injection current changes continuously from 0 to 100mA in 1mA intervals.

[0030] Explanation of reference numerals in the attached figures:

[0031] 1-N surface electrodes;

[0032] 2-P surface electrode;

[0033] 3-N type substrate;

[0034] 4-Sounding wall microcavities;

[0035] 403-N type confinement layer;

[0036] 402 - Active Layer;

[0037] 401-P type confinement layer;

[0038] 5-Waveguide;

[0039] 6-Second end face;

[0040] 7- First arc-side quadrilateral;

[0041] 8-Second-arc quadrilateral. Detailed Implementation

[0042] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0043] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0044] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0045] The inventors discovered through research that, with the current development of 5G technology, data volume has shown an explosive growth trend, and traditional electrical communication technology can no longer meet the needs of daily life and production. Optical communication, as an alternative technology, has proven to be the future direction of communication technology development. Optical communication uses photons as the carrier of information transmission, requiring lasers to provide photons through stable lasing over long periods. However, due to their high gain and bandwidth characteristics and the lack of mode selection capability of the resonant cavity itself, lasers often tend towards multimode lasing. To achieve single-mode lasing, special design is required for mode modulation and suppression of other modes. Therefore, to solve the above problems, this disclosure provides a single-mode semiconductor microcavity laser with good stability, simple fabrication, and small size.

[0046] Figure 1 A schematic three-dimensional structural diagram of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure is shown.

[0047] like Figure 1 As shown, the single-mode semiconductor microcavity laser includes: an N-face electrode 1, a P-face electrode 2, an N-type substrate 3, a whispering-gallery microcavity 4, and a waveguide 5.

[0048] In the embodiments of this disclosure, the N-face electrode 1 is disposed on the lower surface of the N-type substrate 3, i.e., the bottom of the semiconductor microcavity laser, and its shape and size are the same as those of the N-type substrate 3. The N-face electrode 1 is connected to an external circuit for carrier injection.

[0049] P-side electrode 2 is disposed on the upper surface of the whispering-gallery microcavity 4, that is, the top of the single-mode semiconductor microcavity laser, and its shape and size are the same as those of the whispering-gallery microcavity 4. P-side electrode 2 is connected to an external circuit to achieve uniform electrical injection into the laser, that is, to inject current into the whispering-gallery microcavity 4.

[0050] The N-type substrate 3 is located on the upper surface of the N-face electrode 1 to ensure the thermal and structural stability of the device.

[0051] Alternatively, the N-type substrate 3 can be made of silicon, gallium arsenide, indium phosphide, or other compound semiconductor materials.

[0052] The whispering-gallery microcavity 4 is an active medium located between the N-side electrode 1 and the P-side electrode 2, i.e., on the N-type substrate. The area of ​​the whispering-gallery microcavity 4 is smaller than the area of ​​the N-type substrate 3, and it is used to achieve total internal reflection of light to form a stable light field pattern distribution.

[0053] Specifically, the whispering wall microcavity 4 is formed by the intersection and combination of two curved quadrilateral parts obtained by deforming a square. That is, the top view of the whispering wall microcavity 4 shows at least two overlapping curved quadrilaterals of different sizes connected by straight edges.

[0054] The projection of the whispering-gallery microcavity 4 onto the N-type substrate is a deformed arc-edged quadrilateral. The original square side lengths and arc deformations of the two arc-edged quadrilaterals are different, and their centers are separated by a certain distance. This is used to confine the light field in the vertical direction and generate a stable light field mode distribution, so that photons can form a stable lasing mode in the whispering-gallery microcavity 4 through total internal reflection.

[0055] Figure 2 A schematic diagram of a planar structure of a single-mode semiconductor microcavity laser according to an embodiment of the present disclosure is shown.

[0056] like Figure 2 As shown, the whispering-gallery microcavity 4 comprises two partially overlapping arc-sided quadrilaterals 7 and 8 connected by straight edges. The arc-sided deformation of the quadrilateral is defined as the perpendicular distance between the midpoint of the arc and the straight edge. and express.

[0057]

[0058]

[0059] Where a1 and r1 represent the side length and radius of the original square of the first arc-side quadrilateral 7, and a2 and r2 represent the side length and radius of the original square of the second arc-side quadrilateral 8.

[0060] Specifically, in some exemplary embodiments, the side lengths a1 and a2 of the original square are used to describe the size of the first arc-sided quadrilateral 7 and the second arc-sided quadrilateral 8, respectively. The area of ​​the corresponding whispering-gallery microcavity 4 determines the optical path length of total internal reflection of light within it, thereby determining the size of the longitudinal mode spacing of the optical field. Arc-sided deformation amount and The deformation of the original squares corresponding to the first arc-sided quadrilateral 7 and the second arc-sided quadrilateral 8, respectively, can affect the trajectory of light within the whispering-gallery microcavity 4, thus influencing pattern formation. The distance xl between the centers of the first arc-sided quadrilateral 7 and the second arc-sided quadrilateral 8 describes the distance between the two arc-sided quadrilaterals, which in turn determines the degree of overlap between them. The three vertices of the larger arc-sided quadrilateral are defined by a radius r. c The fillet is replaced by a rounded corner, i.e., the fillet radius r. c The radius r is used to describe the degree of deformation at the vertex of quadrilateral 7 with the first arc side. c It can also affect the trajectory of light within the whispering-gallery microcavity 4, thereby affecting the formation of the light field pattern.

[0061] It is understood that the semiconductor microcavity laser provided in this disclosure, through optimized structure and parameters, can achieve wavelength-stable and tunable single-mode lasing over a large current range, meeting the basic requirements of coherent optical communication, thereby increasing data transmission capacity and transmission distance.

[0062] Figure 3 The diagram illustrates the correspondence between the whispering-gallery microcavity mode quality factor (Q value) and the characteristic wavelength of the semiconductor microcavity laser provided in the embodiments of this disclosure.

[0063] For example, the first arc-side quadrilateral 7 and the second arc-side quadrilateral 8 partially overlap, with their top and bottom vertices connected by a straight line. The original square side lengths of the first arc-side quadrilateral 7 and the second arc-side quadrilateral 8 are taken as a1 = 25 μm and a2 = 20 μm, respectively, and the deformation amounts of the first arc-side quadrilateral 7 and the second arc-side quadrilateral 8 are taken as follows. =2.75 μm and =2.10 μm, and the center distance between the two arc-side quadrilaterals is xl=9 μm. At the same time, the three vertices of the first arc-side quadrilateral 7 are respectively marked with a radius of r. c =11 μm fillet replacement. For example Figure 3As shown, three sets of longitudinal modes exist within the wavelength range of 1540-1560 nm, with a mode spacing of approximately 7.8 nm. Each set of longitudinal modes contains one high-Q mode with a Q value above 10000, defined as the fundamental mode, and another high-Q mode with a Q value above 7000, defined as the first-order mode. Considering the second set of longitudinal modes near 1550 nm, the fundamental mode wavelength is approximately 1549.58 nm with a Q value of approximately 10328.51, and the first-order mode wavelength is approximately 1549.40 nm with a Q value of approximately 8168.53. The wavelength spacing between the two modes is approximately 0.18 nm.

[0064] Continue to refer to Figure 1 The sounding-gallery microcavity 4 includes an N-type confinement layer 403, an active layer 402, and a P-type confinement layer 401.

[0065] The N-type confinement layer 403 is an N-type confinement layer disposed on the upper surface of the N-type substrate 3 to reduce the radiation loss of light in the vertical direction.

[0066] The active layer 402 is disposed on the upper surface of the N-type confinement layer 403 and is used for stimulated emission to generate light, that is, to generate light under the action of injected current and form a specific light field pattern distribution.

[0067] The P-type confinement layer 401 is a P-type confinement layer disposed on the upper surface of the active layer 402, used to match the N-type confinement layer 403 to increase the ability to confine the light field in the vertical direction.

[0068] It is understandable that the whispering-gallery microcavity 4 confines the light field by superimposing the first deformed arc-side quadrilateral 7 and the second deformed arc-side quadrilateral 8. At the same time, the presence of two arc-side quadrilaterals of different sizes makes the distribution of light in the whispering-gallery microcavity 4 relatively dispersed, which can effectively reduce the confinement ability of the microcavity on the light field and improve the output power of the laser.

[0069] It should be noted that the whispering-gallery microcavity 4 can be configured to be asymmetrical to suppress higher-order modes within it and to modulate the quality factor of the optical field mode. When the arc edge deformation is large, the corresponding quality factor of the microcavity mode is also large. By adjusting the arc edge deformation, the quality factor of the fundamental mode can exceed 10. 4 .

[0070] In embodiments of this disclosure, the single-mode semiconductor microcavity laser further includes a waveguide 5 disposed on an N-type substrate 3, connected to a preset output terminal of a whispering-gallery microcavity 4, i.e., connected to one corner of the whispering-gallery microcavity 4, for directional laser output within the microcavity. The waveguide 5 and the whispering-gallery microcavity 4 are at the same height in the vertical direction and are located on the same epitaxial wafer.

[0071] For example, such as Figure 2As shown, waveguide 5 extends radially from the intersection of the two arc sides of the second deformed arc quadrilateral 8 to guide the light in the whispering-gallery microcavity 4 to be emitted in a directional manner, thereby improving the coupling efficiency between the emitted light and the optical fiber.

[0072] Optionally, waveguide 5 is a strip waveguide.

[0073] Furthermore, waveguide 5 includes a first end face and a second end face 6.

[0074] The first end face is connected to the preset output end of the sounding wall microcavity 4, that is, it is located at the apex corner of the sounding wall microcavity 4 and is directly connected to one apex corner of the small arc-shaped quadrilateral of the sounding wall microcavity 4.

[0075] The second end face 6 is a cleavage surface, located at the other end where the waveguide 5 connects to the whispering-gallery microcavity 4, i.e., the outward-extending end. The second end face 6 serves as the laser's output port (output end face), used to achieve directional laser emission for docking and coupling with the optical fiber.

[0076] Figure 4 The schematic diagram illustrates the mode field distribution of the fundamental mode and the first-order mode of a whispering-gallery microcavity provided in an embodiment of this disclosure.

[0077] For example, the whispering gantry microcavity 4 is composed of two overlapping deformed arc-edged quadrilaterals 7 and 8 of unequal size, with their upper and lower vertices connected by straight lines. Each quadrilateral retains two arc edges, and the three vertices of the arc-edged quadrilateral 7 are smoothly replaced by rounded arcs. Figure 4 As shown, the fundamental mode and the first-order mode are selected to be around 1550 nm. Due to the asymmetrical shape distribution of the whispering-gallery microcavity 4, compared with the symmetrically distributed arc-edged deformed square microcavity, the mode distribution within the microcavity is non-uniform, and the reflection point of the light within the microcavity is not at the midpoint of the arc edge. Simultaneously, it can be seen that the mode field intensity of the fundamental mode and the first-order mode is very weak at the vertices of the deformed arc-edged quadrilateral 8, indicating that the direct connection to the waveguide has little effect on the mode field at this location.

[0078] Figure 5 The diagram schematically illustrates the quality factors of the fundamental mode and the first-order mode of a semiconductor microcavity laser provided in an embodiment of the present disclosure, as well as the correspondence between the mode spacing of the fundamental mode and the first-order mode and the arc edge deformation.

[0079] For example, the whispering gantry microcavity 4 is composed of two overlapping deformed arc-edged quadrilaterals 7 and 8 of unequal size, with their upper and lower vertices connected by straight lines. Each quadrilateral retains two arc edges, and the three vertices of the arc-edged quadrilateral 7 are smoothly replaced by rounded arcs. Figure 5 As shown, the deformation of the curved edge of the fixed deformable quadrilateral 8 is... =2.10 μm, changing the amount of arc deformation of the curved edge of quadrilateral 7. The diagram illustrates the variation of the quality factors of the fundamental and first-order modes in the whispering-gallery microcavity 4 when the size of the curve changes. This is related to the deformation of the curved edge of the quadrilateral 7. As the magnitude increases, the Q values ​​of the fundamental mode and the first-order mode gradually increase, and the difference between the Q values ​​of the fundamental mode and the first-order mode also gradually increases. This is especially true when the arc edge deformation... When the microcavity is 2.75 μm, the corresponding wavelengths of the fundamental mode and the first-order mode are approximately 1549.58 nm and 1549.40 nm, respectively, with Q values ​​of approximately 10328.51 and 8168.53, and a mode spacing of approximately 22.73 GHz. Therefore, based on this microcavity geometry, by changing the arc edge deformation... It can achieve a large Q-value difference between the fundamental mode and the first-order mode, thereby realizing single-mode lasing to meet the basic requirements of coherent optical communication for light sources.

[0080] Figure 6 The illustration shows the spectrum of an injection current of a semiconductor microcavity laser provided in an embodiment of the present disclosure, which varies continuously from 0 to 100 mA in 1 mA intervals.

[0081] For example, the deformation amount of the arc edge of the first deformed arc-edge quadrilateral 7 is set to =2.75μm, such as Figure 6 As shown, with the increase of the injection current, the semiconductor microcavity laser begins single-mode lasing at a current of 13mA, and this state is maintained up to 100mA. However, due to the temperature rise of the laser caused by the increase in injection current, the wavelength of the lasing mode gradually increases from 1531nm to 1537nm, achieving a wavelength tunable range of 6nm.

[0082] Figure 7 The illustration schematically shows detailed spectra of a semiconductor microcavity laser provided in this disclosure at injection currents of 30mA, 50mA, and 70mA.

[0083] For example, such as Figure 7 As shown, when the injected current increases from 30mA to 70mA, the semiconductor microcavity laser maintains single-mode lasing without any mode hopping. Furthermore, the side-mode suppression ratio can be stably controlled above 30dB, meeting the basic conditions for single-mode laser lasing.

[0084] Figure 8 The illustration shows the variation of the side-mode rejection ratio of a semiconductor microcavity laser provided in an embodiment of the present disclosure as the injection current increases from 0 to 100 mA.

[0085] In some embodiments of this disclosure, such as Figure 8As shown, when the injection current is 13mA, the side mode suppression ratio initially shows a gradual increasing trend as the current increases, and then stabilizes at over 40dB after the current reaches 60mA.

[0086] Based on the above embodiments, in this embodiment, the sidewalls of the whispering wall microcavity are wrapped with a filling material, and the refractive index of the filling material is less than that of the whispering wall microcavity.

[0087] In some exemplary embodiments, the filling material is benzocyclobutene, that is, benzocyclobutene surrounds the whispering wall microcavity 4. The refractive index of benzocyclobutene is lower than that of the whispering wall microcavity 4. By forming a high refractive index difference with the cavity, the total internal reflection condition of light is satisfied, so that the light continuously undergoes total internal reflection in the whispering wall microcavity 4, forming a specific and stable lasing light field mode.

[0088] For example, the refractive index of the whispering-gallery microcavity is set to 3.2, and the cavity is surrounded by benzocyclobutene with a refractive index of 1.54, forming a high refractive index difference with the cavity, thereby satisfying the total internal reflection constraint condition of the light inside the cavity.

[0089] In some exemplary embodiments, a perfectly matched layer is placed on the outside of the whispering-gallery microcavity during simulation.

[0090] Specifically, the outermost layer of the whispering-gallery microcavity is a perfectly matched layer (PML) to prevent light from reflecting off the boundary and affecting the cavity pattern, while terminating the calculation at the model boundary.

[0091] The single-mode semiconductor microcavity laser provided in this embodiment can adjust the wavelength spacing and Q value of the lasing mode by adjusting the arc edge deformation of the whispering galvanic microcavity 4, thereby achieving tunable single-mode lasing with a side-mode suppression ratio greater than 30 dB in the high current range.

[0092] The semiconductor microcavity laser provided in this disclosure has a deep-etched structure, eliminating the need for complex epitaxial growth processes. It enables simultaneous single-mode lasing over a high current range with controllable lasing intensity. Compared to existing semiconductor single-mode lasers, the semiconductor microcavity laser of this disclosure offers advantages such as flexible structural design, controllable modes, small device size, simple fabrication process, high yield, and low cost.

[0093] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0094] Although this disclosure has been shown and described with reference to specific exemplary embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made to this disclosure without departing from the spirit and scope of the disclosure as defined by the appended claims and their equivalents. Therefore, the scope of this disclosure should not be limited to the above embodiments, but should be defined not only by the appended claims, but also by their equivalents.

Claims

1. A single-mode semiconductor microcavity laser, characterized in that, include: N-type substrate; A whispering-gallery microcavity, located on an N-type substrate, has an area smaller than that of the N-type substrate. The microcavity is formed by the intersection and combination of two curved-side quadrilateral portions obtained by deforming a square. The deformation amount of the two curved sides of the two quadrilaterals... and They are respectively: Where a1, a2, r1 and r2 represent the side length and radius of the original square of the two arc-side quadrilaterals, respectively; A waveguide, disposed on the N-type substrate, is connected to the preset output terminal of the whispering-gallery microcavity.

2. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, The whispering wall microcavity includes: An N-type confinement layer is disposed on the upper surface of the N-type substrate; An active layer is disposed on the upper surface of the N-type confinement layer; A P-type confinement layer is disposed on the upper surface of the active layer.

3. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, The waveguide includes: First end face and second end face; wherein The first end face is connected to the preset output end of the whispering-gallery microcavity, and the second end face is a cleavage surface located at the other end of the waveguide connected to the whispering-gallery microcavity.

4. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, The waveguide is a strip waveguide.

5. The single-mode semiconductor microcavity laser according to claim 3, characterized in that, The original square side lengths and arc deformations of the two arc-sided quadrilaterals are not equal, and their centers are a certain distance apart.

6. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, Also includes: The N-face electrode is disposed on the lower surface of the N-type substrate and has the same shape and size as the N-type substrate; The P-side electrode is disposed on the upper surface of the whispering wall microcavity and has the same shape and size as the whispering wall microcavity.

7. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, The height of the whispering-gallery microcavity is the same as the height of the waveguide.

8. The single-mode semiconductor microcavity laser according to claim 1, characterized in that, The sidewalls of the whispering wall microcavity are covered with a filling material, the refractive index of which is less than that of the whispering wall microcavity.

Images