OLED display structure, top light-emitting manufacturing method and bottom light-emitting manufacturing method

Abstract

The invention provides an OLED display structure, a top luminescence manufacturing method and a bottom luminescence manufacturing method, and the OLED display structure comprises an IC circuit board, an anode layer, a cathode layer and a sealing protection layer are sequentially stacked on the IC circuit board, the anode layer is provided with a plurality of independent pixels, the independent pixels are sequentially provided with an electron acceptor layer, a color regulation light-emitting layer and an electron donor layer in a stacked manner, and the electron donor layer is provided with an electron acceptor layer and a color regulation light-emitting layer. The electron acceptor layer and the electron donor layer are completely isolated by the color regulation and control light-emitting layers, the IC circuit board is connected with a plurality of color regulation and control light-emitting layers through a driving circuit, and the thickness of the color regulation and control light-emitting layers is regulated and controlled through regulating a current or voltage value by the driving circuit. The design of the single pixels is adopted, the independent light emitting range of each single pixel covers all colors of the visible light wave band, the idle problem existing in traditional RGB pixels is avoided, the manufacturing efficiency is further improved, and the cost is further reduced; through the mode that the gaps are reserved between the adjacent single pixels, cross interference between the pixels can be prevented, and the display performance is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of display devices, and relates to an independent light-emitting pixel, in particular to an OLED display structure and a top-emitting manufacturing method and a bottom-emitting manufacturing method. Background Art

[0002] OLED technology itself is just a light-emitting technology. Therefore, to make it into a large-scale display application such as a TV, it requires not only high-density active driving technology, but also full-color production technology. The full-color performance ability of a display is one of the important indicators of whether a display can be favored in the market. Therefore, many full-color production technologies in displays are also applied to OLED displays. There are usually three full-color production processes: light color conversion (Color Conversion), color filter (Color Filter) and RGB pixel independent light emission.

[0003] Light color conversion is to combine blue light OLED with light color conversion film array. First, prepare blue light OLED devices, and then use its blue light to excite light color conversion materials to obtain red and green light, so as to obtain full color. Color filter film technology is to combine white light OLED with color filter film. First, prepare white light OLED devices, then obtain three primary colors through color filter film, and then combine the three primary colors to achieve color display. It is the most widely used color production mode at present. RGB pixel independent light emission uses precise mask and alignment technology. First, prepare the red, green and blue primary color light emission centers, and then adjust the mixing ratio of the three color combinations to produce true color, so that the three-color OLED components emit light independently to form a pixel.

[0004] In the current mainstream LCD display and the OLED display technology that has developed rapidly in recent years, no matter which full-color technology is used, three sub-pixels form a complete RGB pixel. Taking a 1280×1024 resolution display as an example, the actual pixels should be 1280×1024×3. When one of the three sub-pixels is working, the other two pixels are in a closed state. Due to the limited resolution and response time of the human eye, it is impossible to identify which pixel emits the color, which is what the industry calls the human eye deception principle. The technical route of three sub-pixels forming a RGB full-color pixel idles two pixels during the display process, which actually increases the production cost. The means to improve the resolution are mainly to reduce the line width and increase the pixel density as much as possible. Of course, it is restricted by many factors. At this stage, it is the most mature technical route.

[0005] The three colorization technologies have their own advantages and disadvantages. The key to the colorization technology of light color conversion is to improve the color purity and efficiency of the light color conversion material, and only the blue light OLED component needs to be evaporated. However, its disadvantage is that the light color conversion material easily absorbs the blue light in the environment, resulting in a decrease in image contrast, and the light guide will also cause a decrease in picture quality. The key to the color filter film technology is to obtain high-efficiency and high-purity white light, and the mature color filter film manufacturing technology of liquid crystal display LCD can be used. However, the use of this technology causes the loss of light to be as high as two-thirds. The key to the RGB pixel independent light emitting technology is to improve the color purity and light emitting efficiency of the light emitting material. At the same time, the metal mask etching technology is also crucial, but there are shortcomings in the purity, efficiency and life of the red and blue materials, as well as various problems caused by the pixel arrangement.

[0006] In summary, the traditional RGB pixel is based on three sub-pixels (RGB) to form a complete pixel, and two pixels are idle during the display process, which increases the production cost; the traditional OLED display structure is composed of multiple materials such as organic light-emitting layer, electron transport and electron injection layer. The energy released by the exciton transition of organic molecules is as high as about 0.5eV. It is extremely difficult to arbitrarily control the exciton energy of the same molecule. There is a problem that the luminous color and lifespan of pixels made of multiple materials are difficult to regulate; in the traditional OLED display structure, the connection between pixels and the underlying circuit is mostly multi-point connection. Multi-point connection requires the design and manufacture of complex circuit boards to ensure that each pixel can be effectively connected to the underlying circuit. In the multi-point connection, signal lines may cross, resulting in signal interference and crosstalk problems, which may affect the transmission of electrical signals between pixels and reduce display performance. Summary of the invention

[0007] The purpose of the present invention is to address the above-mentioned problems in the existing technology and propose an OLED display structure and a top-emission manufacturing method and a bottom-emission manufacturing method for designing independent pixels, adjusting the film thickness by controlling the driving voltage or the driving current, thereby controlling the exciton energy to regulate the luminescent color.

[0008] The objective of the present invention can be achieved through the following technical solutions: an OLED display structure, comprising an IC circuit board, on which an anode layer, a cathode layer and a sealing protection layer are stacked in sequence, a plurality of independent pixels are arranged on the anode layer, and an electron acceptor layer, a color-regulated luminescent layer and an electron donor layer are stacked in sequence on the independent pixels, the electron acceptor layer is completely isolated from the electron donor layer by the color-regulated luminescent layer, a plurality of the color-regulated luminescent layers are connected on the IC circuit board through a driving circuit, and the thickness of the color-regulated luminescent layer is regulated by adjusting the current or voltage value through the driving circuit.

[0009] In the above-mentioned OLED display structure, the driving circuit connected between the independent pixel and the IC circuit board is in the shape of a long strip.

[0010] In the above-mentioned OLED display structure, the independent pixels are specifically single pixels, and gaps are left between adjacent single pixels.

[0011] In the above-mentioned OLED display structure, the independent light emitting range of the single pixel covers all colors in the visible light band.

[0012] A top-emitting method for manufacturing an OLED display structure, the top-emitting method is used to manufacture the above-mentioned OLED display structure, the OLED display structure is used as a top-emitting structure, and the top-emitting structure manufacturing method comprises the following steps:

[0013] S1 performs high-precision masking on the anode layer, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the anode layer of the high-precision mask to form an electron acceptor layer;

[0014] S2: replacing the mask for the first time, evaporating or inkjet printing mCBP [3,3′-di(9H-carbazole-9-yl)-1,1′-biphenyl] on the electron acceptor layer on the surface of the anode layer of the mask replaced for the first time, to form a color-controlled light-emitting layer;

[0015] S3: replacing the mask for the second time, evaporating or inkjet printing m-MTDATA [4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the anode layer of the second mask to form an electron donor layer;

[0016] S4 uses magnetron sputtering or thermal evaporation to make a cathode layer on the electron donor layer;

[0017] S5 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

[0018] In the top-emitting method for manufacturing the OLED display structure, the thickness range of the color-adjusting luminescent layer is

[0019] A bottom-light emitting manufacturing method for an OLED display structure, the bottom-light emitting manufacturing method is used to manufacture the above-mentioned OLED display structure, the OLED display structure is used as a bottom-light emitting structure, and the bottom-light emitting structure manufacturing method comprises the following steps:

[0020] S1 performs high-precision masking on the prefabricated substrate, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the prefabricated substrate with the high-precision mask to form an electron acceptor layer;

[0021] S2: replacing the mask for the first time, vapor-depositing or ink-jet-printing DPEPO bis[2-(diphenylphosphino)phenyl]ether oxide on the surface of the prefabricated substrate with the mask replaced for the first time on the electron acceptor layer to form a color-controlled light-emitting layer;

[0022] S3: replacing the mask for the second time, thermally evaporating or inkjet printing m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the prefabricated substrate with the mask replaced for the second time on the color-adjusting light-emitting layer to form an electron donor layer;

[0023] S4: peeling off the pixel structure layer from the prefabricated substrate, and then carrying the peeled pixel structure layer on the transition substrate;

[0024] S5 uses transfer tools to transfer the pixel structure layer in batches according to the product size requirements and bonds it to the anode layer of the IC circuit board;

[0025] S6 uses magnetron sputtering or thermal evaporation to make a cathode layer on the electron donor layer;

[0026] S7 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

[0027] In the above-mentioned bottom-emitting method for manufacturing an OLED display structure, the thickness range of the color-adjusting luminescent layer is

[0028] Compared with the prior art, the OLED display structure and the top-emitting manufacturing method and the bottom-emitting manufacturing method have the following beneficial effects:

[0029] 1. The single pixel design is adopted, and the independent luminous range of each single pixel covers all colors in the visible light band, avoiding the idle problem existing in traditional RGB pixels, further improving production efficiency and reducing costs; by leaving gaps between adjacent single pixels, it helps to prevent cross interference between pixels and improve display performance.

[0030] 2. By adjusting the current or voltage value of the driving circuit, the thickness of the color-controlling light-emitting layer is indirectly adjusted to achieve precise control of the pixel light-emitting color, solving the problem of difficult control of pixel light-emitting color in traditional OLED display structures.

[0031] 3. The use of a long strip drive circuit connection method reduces the complexity of the circuit board compared to the traditional multi-point connection, avoids the signal interference and crosstalk that may be caused by multi-point connection, and improves the display performance; increases the connection area between independent pixels and the underlying drive circuit, ensures that independent pixels are in a stable power supply state, and helps to improve the reliability and stability of the pixels.

[0032] 4. Through the use of methods such as evaporation or inkjet printing, high-precision material control is achieved in the manufacturing process of the electron acceptor layer, color-controlled luminescent layer, and electron donor layer. This ensures the uniformity and quality of each layer of material, thereby improving the performance and life of the entire display structure.

[0033] In general, the beneficial effects of the invention are reflected in improving display performance, reducing production costs, improving production efficiency, achieving color control, and solving many problems existing in traditional OLED display structures. The present invention has achieved significant innovations and improvements in many aspects such as pixel composition, circuit connection design, pixel optimization, display structure manufacturing method, material utilization and manufacturing process optimization, which not only improves display performance and color performance accuracy, but also reduces production costs, improves manufacturing efficiency and product durability. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a top view of the pixel distribution structure of the OLED display structure.

[0035] Figure 2 It is a schematic cross-sectional view of the pixel structure of the OLED display structure.

[0036] In the figure, 1, IC circuit board; 2, driving circuit; 3, independent pixel; 31, electron acceptor layer; 32, color control luminescent layer; 33, electron donor layer. DETAILED DESCRIPTION

[0037] The following are specific embodiments of the present invention and the accompanying drawings to further describe the technical solution of the present invention, but the present invention is not limited to these embodiments.

[0038] Embodiment 1

[0039] like Figure 1 and 2 As shown, the OLED display structure includes an IC circuit board 1, on which an anode layer, a cathode layer and a sealing protection layer are stacked in sequence, a plurality of independent pixels 3 are arranged on the anode layer, and an electron acceptor layer 31, a color-regulating luminescent layer 32 and an electron donor layer 33 are stacked in sequence on the independent pixels 3, the electron acceptor layer 31 is completely isolated from the electron donor layer 33 by the color-regulating luminescent layer 32, and a plurality of color-regulating luminescent layers 32 are connected to the IC circuit board 1 through a driving circuit 2, and the thickness of the color-regulating luminescent layer 32 is regulated by adjusting the current or voltage value through the driving circuit 2.

[0040] The driving circuit 2 connected between the independent pixel 3 and the IC circuit board 1 is in a strip shape. In the prior art, the pixel and the IC circuit board 1 are connected by a multi-point circuit, and the connection method is improved to a strip shape, which increases the connection area between the independent pixel 3 and the underlying driving circuit 2 to ensure that the independent pixel 3 is in a stable power supply state.

[0041] The independent pixel 3 is specifically a single pixel, and a gap is left between adjacent single pixels.

[0042] The independent light emission range of a single pixel covers all colors in the visible light band.

[0043] In the present invention, three sub-pixels are no longer used to form a RGB full-color pixel, and a single pixel is used to achieve full-color display, which improves the utilization rate of the pixel. Under the same resolution, the display structure designed by the present invention reduces the number of pixels by two-thirds. Under the trend of increasingly smaller line widths, the resolution of the display can be improved by such a design. The long strip connection method increases the connection area between the pixel and the underlying circuit, ensuring that the pixel is in a stable power supply state. A single pixel is no longer a traditional light-emitting structure composed of hole injection, hole transmission, organic light-emitting layer, electron transmission and electron injection layer. The entire pixel is prepared by a single organic molecule, which avoids the problem that the light-emitting color and life of pixels made of multiple materials are difficult to regulate. In the traditional structure, the energy released by the exciton transition of the organic molecule is as high as about 0.5eV, and it is extremely difficult to arbitrarily control the exciton energy of the same molecule. The driving voltage or driving current of the present invention corresponds to the film thickness of the color-regulating light-emitting layer 32. The film thickness of the color-regulating light-emitting layer 32 is adjusted by controlling the driving voltage or driving current to achieve control of the exciton energy, thereby obtaining the desired light-emitting color. This is the result of controlling the distance between the donor layer and the acceptor layer and improving the thermally activated delayed fluorescence characteristics of the exciton.

[0044] Embodiment 2

[0045] Based on the first embodiment, the difference of this embodiment is that:

[0046] A top-emitting method for manufacturing an OLED display structure, the top-emitting method is used to manufacture the above-mentioned OLED display structure, the OLED display structure is used as a top-emitting structure, and the top-emitting structure manufacturing method comprises the following steps:

[0047] S1 performs high-precision masking on the anode layer, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the anode layer with high-precision mask to form an electron acceptor layer 31;

[0048] S2: The mask is replaced for the first time, and mCBP [3,3′-di(9H-carbazole-9-yl)-1,1′-biphenyl] is evaporated or inkjet printed on the surface of the anode layer of the mask replaced for the first time on the electron acceptor layer 31 to form a color-controlled light-emitting layer 32; the thickness range of the color-controlled light-emitting layer 32 is

[0049] S3: replacing the mask for the second time, evaporating or inkjet printing m-MTDATA [4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the anode layer of the second mask to form the electron donor layer 33;

[0050] S4 uses magnetron sputtering or thermal evaporation to form a cathode layer on the electron donor layer 33;

[0051] S5 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

[0052] Embodiment 3

[0053] Based on the first embodiment, the difference of this embodiment is that:

[0054] A bottom-light emitting manufacturing method for an OLED display structure, the bottom-light emitting manufacturing method is used to manufacture the above-mentioned OLED display structure, the OLED display structure is used as a bottom-light emitting structure, and the bottom-light emitting structure manufacturing method comprises the following steps:

[0055] S1 performs high-precision masking on the prefabricated substrate, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the prefabricated substrate with the high-precision mask to form an electron acceptor layer 31;

[0056] S2: replacing the mask for the first time, vapor-depositing or ink-jet-printing DPEPO bis[2-(diphenylphosphino)phenyl]ether oxide on the surface of the prefabricated substrate with the mask replaced for the first time on the electron acceptor layer 31 to form a color-controlled luminescent layer 32; the thickness range of the color-controlled luminescent layer 32 is

[0057] S3: replacing the mask for the second time, thermally evaporating or inkjet printing m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the prefabricated substrate with the mask replaced for the second time on the color-adjusting light-emitting layer 32 to form an electron donor layer 33;

[0058] S4: peeling off the pixel structure layer from the prefabricated substrate, and then carrying the peeled pixel structure layer on the transition substrate;

[0059] Specifically, an ultraviolet stripping tool or a thermal volatile stripping tool is used to strip the pixel structure layer on the prefabricated substrate.

[0060] S5: According to the product size requirements, the pixel structure layer is transferred in batches using a transfer tool and bonded to the anode layer of the IC circuit board 1;

[0061] S6: using magnetron sputtering or thermal evaporation to form a cathode layer on the electron donor layer 33;

[0062] S7 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

[0063] Embodiment 4

[0064] The specific operation method of adjusting the thickness of the light-emitting layer 32 to adjust the color of the light is as follows:

[0065] According to the structure of the present invention, the driving voltage is set to 4V or the driving current is set to 15mA, and the corresponding spacing layer thickness is The color coordinates are (x:0.65, y:0.31), emitting red light; the driving voltage is set to 5.6V or the driving current is 25mA, and the corresponding spacer layer thickness is The color coordinates are (x:0.20, y:0.63), emitting green light; the driving voltage is set to 6.9V or the driving current is 40mA, and the corresponding spacer layer thickness is The color coordinates are (x:0.14, y:0.08), and it emits blue light.

[0066] The specific embodiments described herein are merely examples of the spirit of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, but they will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

[0067] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

Claims

1. An OLED display structure, comprising an IC circuit board, characterized in that: An anode layer, a cathode layer and a sealing protection layer are stacked on the IC circuit board in sequence, a plurality of independent pixels are arranged on the anode layer, an electron acceptor layer, a color-regulated luminescent layer and an electron donor layer are stacked on the independent pixels in sequence, the electron acceptor layer is completely isolated from the electron donor layer by the color-regulated luminescent layer, a plurality of the color-regulated luminescent layers are connected on the IC circuit board through a driving circuit, and the thickness of the color-regulated luminescent layer is regulated by adjusting the current or voltage value through the driving circuit.

2. The OLED display structure according to claim 1, characterized in that: The driving circuit connected between the independent pixel and the IC circuit board is in a strip shape.

3. The OLED display structure according to claim 1, characterized in that: The independent pixels are specifically single pixels, and gaps are left between adjacent single pixels.

4. The OLED display structure according to claim 3, characterized in that: The independent light emitting range of the single pixel covers all colors in the visible light band.

5. A top-emitting method for manufacturing an OLED display structure, characterized in that: The top-emitting manufacturing method is used to manufacture the OLED display structure according to any one of claims 1 to 4, wherein the OLED display structure is a top-emitting structure, and the top-emitting structure manufacturing method comprises the following steps: S1 performs high-precision masking on the anode layer, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the anode layer of the high-precision mask to form an electron acceptor layer; S2: replacing the mask for the first time, evaporating or inkjet printing mCBP [3,3′-di(9H-carbazole-9-yl)-1,1′-biphenyl] on the electron acceptor layer on the surface of the anode layer of the mask replaced for the first time, to form a color-controlled light-emitting layer; S3: replacing the mask for the second time, evaporating or inkjet printing m-MTDATA [4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the anode layer of the second mask to form an electron donor layer; S4 uses magnetron sputtering or thermal evaporation to make a cathode layer on the electron donor layer; S5 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

6. The top-emitting method for manufacturing an OLED display structure according to claim 5, characterized in that: The thickness range of the color-controlled luminescent layer is 7. A method for manufacturing a bottom-emitting OLED display structure, characterized in that: The bottom-emitting manufacturing method is used to manufacture the OLED display structure according to any one of claims 1 to 4, wherein the OLED display structure is a bottom-emitting structure, and the bottom-emitting structure manufacturing method comprises the following steps: S1 performs high-precision masking on the prefabricated substrate, and vapor-deposit or ink-jet prints PO-T2T{2,4,6-tris[3-(diphenylphosphino)phenyl]-1,3,5-triazine} on the surface of the prefabricated substrate with the high-precision mask to form an electron acceptor layer; S2: replacing the mask for the first time, vapor-depositing or ink-jet-printing DPEPO bis[2-(diphenylphosphino)phenyl]ether oxide on the surface of the prefabricated substrate with the mask replaced for the first time on the electron acceptor layer to form a color-controlled light-emitting layer; S3: replacing the mask for the second time, thermally evaporating or inkjet printing m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] on the surface of the prefabricated substrate with the mask replaced for the second time on the color-adjusting light-emitting layer to form an electron donor layer; S4: peeling off the pixel structure layer from the prefabricated substrate, and then carrying the peeled pixel structure layer on the transition substrate; S5 uses transfer tools to transfer the pixel structure layer in batches according to the product size requirements and bonds it to the anode layer of the IC circuit board; S6 uses magnetron sputtering or thermal evaporation to make a cathode layer on the electron donor layer; S7 uses atomic layer deposition and CVD methods to make a sealing protective layer, so that the sealing protective layer covers and encapsulates the entire top light-emitting structure.

8. The bottom light emitting manufacturing method of the OLED display structure according to claim 7, characterized in that: The thickness range of the color-controlled luminescent layer is

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