Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises a substrate, a display function layer, a blocking structure and an encapsulation layer. The substrate comprises a display area and a non-display area. The display function layer is located on one side of the substrate. The blocking structure is located on the side of the display function layer away from the substrate and in the non-display area. The blocking structure comprises a dam and a buffer structure. The encapsulation layer is located on the side of the blocking structure away from the display function layer. The buffer structure is located on the side of the dam close to the display area and / or the bottom surface of the groove away from the display area. The height of the buffer structure is less than the height of the dam. The technical scheme provided by the embodiment of the application reduces the slope of the dam, thereby improving the formation quality of the touch signal wire covering the sidewall of the dam.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to the technical field of semiconductor technology, and in particular to a display panel and a display device. BACKGROUND

[0002] An organic light-emitting diode (OLED) display panel has advantages of lightness, high brightness, low power consumption, fast response, high definition, good flexibility, and high light-emitting efficiency, and is applied more and more widely in the field of display technology.

[0003] The current organic light-emitting diode display panel sets a dam in a non-display area, and the formation quality of a touch signal trace covering the sidewall of the dam is not high. SUMMARY

[0004] Therefore, the purpose of the present application is to provide a display panel and a display device to improve the formation quality of a touch signal trace covering the sidewall of a dam.

[0005] Embodiments of the present application provide a display panel, comprising:

[0006] A substrate, the substrate comprising a display area and a non-display area;

[0007] A display functional layer, the display functional layer being located on one side of the substrate;

[0008] A blocking structure, the blocking structure being located on a side of the display functional layer away from the substrate and in the non-display area; the blocking structure comprising a dam and a slope angle reducing structure;

[0009] An encapsulation layer, the encapsulation layer being located on a side of the blocking structure away from the display functional layer; wherein,

[0010] A buffer structure is located on a side of the dam close to the display area and / or on a side of the dam away from the display area; the height of the buffer structure is less than the height of the dam.

[0011] In the technical solution, the buffer structure is arranged on the groove bottom surface of the dam on the side close to the display area and / or on the groove bottom surface of the dam on the side away from the display area, and the height of the buffer structure is less than the height of the dam, so that the depth of the groove of the sidewall of the dam is reduced, the slope of the sidewall of the dam is reduced, the formation quality of the touch signal trace covering the sidewall of the dam is improved, and the problem of easy disconnection is avoided.

[0012] Optionally, the buffer structure comprises a plurality of strip structures, the plurality of strip structures are arranged at a first preset distance in a direction from the display area to the non-display area, the minimum distance between the plurality of strip structures and the dam in the direction from the display area to the non-display area is a second preset distance, the first preset distance is greater than the minimum value of the exposure distance of the photolithography process, and the second preset distance is greater than the minimum value of the exposure distance of the photolithography process.

[0013] Preferably, the slope angle of the plurality of strip structures near the sidewall of the display area and the sidewall away from the display area is less than 90°.

[0014] In the technical solution, the plurality of strip structures and the dam are arranged at intervals, which reduces the depth of the groove of the sidewall of the dam, thereby reducing the slope of the sidewall of the dam, improving the formation quality of the touch signal wire covering the sidewall of the dam, and avoiding the problem of easy disconnection. In addition, the adjacent two strip structures are arranged at a first preset distance greater than the minimum value of the exposure pitch of the photolithography process in the direction from the display area to the non-display area, and the plurality of strip structures and the dam are arranged at a second preset distance greater than the minimum value of the exposure pitch of the photolithography process in the direction from the display area to the non-display area, which means that the plurality of strip structures and the dam are arranged at intervals in the direction from the display area to the non-display area, and the adjacent two strip structures are also arranged at intervals. When the strip structure is an organic material, the above technical solution can prevent water vapor from entering the display area from the non-display area along the strip structure, thereby improving the reliability of the display panel.

[0015] Preferably, the slope angle of the plurality of strip structures near the sidewall of the display area and the sidewall away from the display area is less than 90°, which can further reduce the slope of the sidewall of the dam to improve the formation quality of the touch signal wire covering the sidewall of the dam and avoid the problem of easy disconnection.

[0016] Optionally, the buffer structure comprises a plurality of comb structures, and the plurality of comb structures are arranged at a third preset distance as the minimum pitch in the direction perpendicular to the display area to the non-display area, and the third preset distance is less than the minimum value of the exposure pitch of the photolithography process.

[0017] Preferably, the plurality of comb structures are connected with the dam, and the slope angle of the plurality of comb structures away from the sidewall of the dam connected therewith is less than 90°.

[0018] In the technical solution, the buffer structure comprises a plurality of comb structures, and the buffer structure comprising the plurality of comb structures reduces the depth of the groove of the sidewall of the dam, thereby reducing the slope of the sidewall of the dam, improving the formation quality of the touch signal wire covering the sidewall of the dam, and avoiding the problem of easy disconnection. In addition, the plurality of comb structures are arranged at a third preset distance less than the minimum value of the exposure pitch of the photolithography process in the direction perpendicular to the display area to the non-display area, so that the adjacent two comb structures also form a relatively gentle slope, which can avoid the problem of disconnection of the touch signal wire at the position between the adjacent two comb structures.

[0019] Preferably, the plurality of comb tooth structures and the dam are connected, and the thickness of the plurality of comb tooth structures gradually decreases in a direction away from the dam connected thereto, that is, the slope angle of the plurality of combs away from the side wall of the dam connected thereto is less than 90°, which can further reduce the slope of the side wall of the dam to improve the formation quality of the touch signal wire covering the side wall of the dam and avoid the problem of easy disconnection.

[0020] Optionally, the buffer structure further comprises a plurality of strip structures, the plurality of strip structures are arranged at a first preset distance in a direction from the display area to the non-display area, and the minimum distance between the plurality of strip structures and the plurality of comb tooth structures in the direction from the display area to the non-display area is a fourth preset distance, the first preset distance is greater than the minimum exposure distance of the photolithography process, and the fourth preset distance is greater than the minimum exposure distance of the photolithography process.

[0021] Preferably, the slope angle of the plurality of strip structures near the side wall of the display area and away from the side wall of the display area is less than 90°.

[0022] In the technical solution, the plurality of comb tooth structures reduces the depth of the groove of the side wall of the dam, thereby reducing the slope of the side wall of the dam, improving the formation quality of the touch signal wire covering the side wall of the dam, and avoiding the problem of easy disconnection. And the plurality of comb tooth structures are arranged at a third preset distance less than the minimum exposure distance of the photolithography process in a direction perpendicular to the display area to the non-display area, so that a relatively gentle slope is also formed between the adjacent two comb tooth structures, which can avoid the problem of disconnection of the touch signal wire at the position between the adjacent two comb tooth structures. The plurality of strip structures and the dam are arranged at a distance, which reduces the depth of the groove of the side wall of the dam, thereby reducing the slope of the side wall of the dam, improving the formation quality of the touch signal wire covering the side wall of the dam, and avoiding the problem of easy disconnection. And the adjacent two strip structures are arranged at a first preset distance greater than the minimum exposure distance of the photolithography process in the direction from the display area to the non-display area, and the plurality of strip structures and the plurality of comb tooth structures are arranged at a fourth preset distance greater than the minimum exposure distance of the photolithography process in the direction from the display area to the non-display area. It is indicated that the plurality of strip structures and the plurality of comb tooth structures are arranged at a distance in the direction from the display area to the non-display area, and the adjacent two strip structures are also arranged at a distance. When the strip structure is an organic material, the above technical solution can prevent water vapor from entering the display area from the non-display area along the strip structure, thereby improving the reliability of the display panel.

[0023] Preferably, the slope angle of the plurality of strip structures near the side wall of the display area and away from the side wall of the display area is less than 90°, which can further reduce the slope of the side wall of the dam to improve the formation quality of the touch signal wire covering the side wall of the dam and avoid the problem of easy disconnection.

[0024] Optionally, the dam comprises at least two sub-layers arranged in layers.

[0025] The buffer structure and the partial film layer of the dam are located in the same layer.

[0026] In the technical solution, the buffer structure and the partial film layer of the dam are located in the same layer and are made of the same material. In the process of completing the dam, the preparation of the buffer structure is completed, the preparation process is simplified, and the preparation cost is reduced. The dam includes at least two sub-layers arranged in a stack. In the direction in which the substrate points to the display function layer, the area of the at least two sub-layers gradually decreases to ensure that the sidewall of the dam has a certain angle slope.

[0027] Optionally, the dam includes at least a first dam and a second dam. The first dam is located on the side of the second dam close to the display area. A groove is arranged between the first dam and the second dam. The height of the second dam is greater than that of the first dam.

[0028] The second dam includes a first sub-layer, a second sub-layer, and a third sub-layer arranged in a stack in the direction in which the substrate points to the display function layer.

[0029] The first dam includes a second sub-layer and a third sub-layer arranged in a stack in the direction in which the substrate points to the display function layer.

[0030] The buffer structure is located on the bottom surface of the groove at at least one of the following positions: the side of the first dam close to the display area, between the first dam and the second dam, and the side of the second dam away from the first dam.

[0031] Preferably, the buffer structure and any one of the first sub-layer, the second sub-layer, and the third sub-layer are located in the same layer.

[0032] In the technical solution, the dam includes at least a first dam and a second dam. Taking the organic layer as an example, the first dam and the second dam are arranged to avoid ink overflow to the side of the second dam away from the display area during the inkjet printing process of the organic layer of the encapsulation layer, thereby ensuring the encapsulation effect. The first dam can also block external water and oxygen from invading the display area, thereby ensuring the display effect of the display panel. The height of the second dam is greater than that of the first dam, and the second dam has the effect of further blocking the overflow of the organic layer and the invasion of water and oxygen into the display area. The more the number of dams included in the dam, the better the effect of blocking the overflow of the organic layer and the invasion of water and oxygen into the display area.

[0033] Preferably, the first sub-layer, the second sub-layer, and the third sub-layer constitute the second dam, and the second sub-layer and the third sub-layer constitute the first dam. The buffer structure can be located in the same layer as the first sub-layer and be made of the same material. The buffer structure can be located in the same layer as the second sub-layer and be made of the same material. Alternatively, the buffer structure can also be located in the same layer as the third sub-layer and be made of the same material. In the process of preparing the dam, the preparation of the buffer structure is completed, the preparation process is simplified, and the preparation cost is reduced.

[0034] Optionally, the display function layer comprises a driving circuit layer, a planarization layer, a pixel definition layer, a support layer and a display layer;

[0035] The driving circuit layer is located on one side of the substrate;

[0036] The planarization layer is located on the side of the driving circuit layer away from the substrate;

[0037] The pixel definition layer is located on the side of the planarization layer away from the driving circuit layer, wherein the pixel definition layer comprises a plurality of openings;

[0038] The support layer is located on the side of the pixel definition layer away from the driving circuit layer;

[0039] The display layer is located in the openings of the pixel definition layer;

[0040] The first sub-layer and the planarization layer are located in the same layer;

[0041] The second sub-layer and the pixel definition layer are located in the same layer;

[0042] The third sub-layer and the support layer are located in the same layer.

[0043] In the technical solution, the planarization layer, the pixel definition layer and the support layer are usually made of organic materials, i.e. the sub-layers included in the dam comprising at least the first dam and the second dam are organic layers. Since the buffer structure and the partial film layers of the dam are located in the same layer and are made of the same material, the buffer structure is also made of organic materials. The preparation of the buffer structure and the dam is completed at the same time as the preparation of the planarization layer, the pixel definition layer and the support layer, which simplifies the preparation process and reduces the preparation cost.

[0044] Preferably, when the first sub-layer and the planarization layer are located in the same layer and are made of the same material; the second sub-layer and the pixel definition layer are located in the same layer and are made of the same material; and the third sub-layer and the support layer are located in the same layer and are made of the same material, if the pixel definition layer and the support layer are prepared by the same half-tone mask (Half-tone Mask), the buffer structure and the first sub-layer can be set to be located in the same layer and be made of the same material and be prepared by a common mask, thereby reducing the difficulty of simultaneous preparation of the buffer structure and the partial sub-layers of the dam.

[0045] Optionally, the driving circuit layer comprises an insulating layer, a driving circuit and a plurality of signal lines located inside the insulating layer, the plurality of signal lines are electrically connected with the driving circuit, the driving circuit is located in the display area, and the plurality of signal lines are located in the non-display area; at least part of the plurality of signal lines are located on the side of the first dam close to the display area, at least part of the plurality of signal lines are located between the first dam and the second dam, and at least part of the plurality of signal lines are arranged in the display area in the direction pointing to the non-display area.

[0046] In the technical solution, at least part of the plurality of signal lines is located at least on one side of the first dam close to the display area, and at least part of the plurality of signal lines is located between the first dam and the second dam and is arranged at intervals in the direction from the display area to the non-display area. Since the signal lines are located inside the insulating layer, the surface of the insulating layer away from the signal lines has an acute angle recess. The buffer structure is made of an organic material and has good flexibility and filling performance, which relieves the surface unevenness caused by the acute angle recess, avoids the problem of easy disconnection when the touch signal line passes through the area corresponding to the acute angle recess at the groove bottom surface of the side wall of the first dam and the second dam, and avoids delamination of the inorganic layer at the groove bottom surface of the side wall of the first dam and the second dam, thereby avoiding water and oxygen intrusion and ensuring the packaging effect of the packaging layer.

[0047] Optionally, the packaging layer comprises an inorganic layer and an organic layer arranged in layers; the organic layer is located on one side of the barrier structure close to the display area, and the inorganic layer is located in the display area and the non-display area and covers the barrier structure.

[0048] The display panel further comprises a touch layer, the touch layer being located on one side of the packaging layer away from the barrier structure, the touch layer comprising a touch electrode and a touch signal line, the touch electrode being located in the display area, and the touch signal line being located in the non-display area and covering the barrier structure.

[0049] In the technical solution, the inorganic layer is located in the display area and the non-display area and covers the barrier structure, for blocking external water and oxygen from intruding into the display area, thereby ensuring the display effect of the display panel. The touch electrode is located in the display area, for realizing a display panel with a touch function. The touch signal line is located in the non-display area and covers the barrier structure, the height of the buffer structure in the barrier structure being less than the height of the dam, which reduces the depth of the groove of the dam side wall, thereby reducing the slope of the dam side wall, improving the formation quality of the touch signal line covering the dam side wall, and avoiding the problem of easy disconnection.

[0050] The display device provided by the embodiment of the present application also has the beneficial effects of the display panel described in the above embodiments, which will not be repeated here.

[0051] In the technical solution, the display device also has the beneficial effects of the display panel described in the above embodiments, which will not be repeated here.

[0052] The technical solution provided by the embodiment of the present application is that a buffer structure is arranged at the groove bottom surface of the dam on one side close to the display area and / or on one side away from the display area, and the height of the buffer structure is less than the height of the dam, which reduces the depth of the groove of the dam side wall, thereby reducing the slope of the dam side wall, improving the formation quality of the touch signal line covering the dam side wall, and avoiding the problem of easy disconnection. BRIEF DESCRIPTION OF DRAWINGS

[0053] Figure 1 is a top view of a display panel provided by the prior art;

[0054] Figure 2 is Figure 1 is a cross-sectional structure schematic view in A1-A2 direction in the figure;

[0055] Figure 3 is a top view of a display panel provided by an embodiment of the present application;

[0056] Figure 4 is Figure 3 is a cross-sectional structure schematic view in A1-A2 direction in the figure;

[0057] Figure 5 is Figure 3 is an enlarged view of a top view of a first dam, a second dam and a buffer structure in the figure;

[0058] Figure 6 is Figure 5 is a cross-sectional structure schematic view in B1-B2 direction in the figure;

[0059] Figure 7 is Figure 3 is another cross-sectional structure schematic view in A1-A2 direction in the figure;

[0060] Figure 8 is Figure 3 is an enlarged view of another top view of a first dam, a second dam and a buffer structure in the figure;

[0061] Figure 9 is Figure 8 is a cross-sectional structure schematic view in B1-B2 direction in the figure;

[0062] Figure 10 is Figure 3 is still another cross-sectional structure schematic view in A1-A2 direction in the figure;

[0063] Figure 11 is Figure 3 is an enlarged view of still another top view of a first dam, a second dam and a buffer structure in the figure;

[0064] Figure 12 is Figure 11 is a cross-sectional structure schematic view in B1-B2 direction in the figure;

[0065] Figure 13 is Figure 3 is a cross-sectional structure schematic view in C1-C2 direction of a display area in the figure;

[0066] Figure 14 is a structure schematic view of a display device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0067] The application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely intended for the purpose of interpretation of the present application and are not limiting of the present application. In addition, it should be noted that only the parts related to the present application are shown in the accompanying drawings for the purpose of description.

[0068] In the current organic light-emitting diode display panel, the forming quality of the touch signal wire covering the side wall of the dam is not high. Figure 1 and Figure 2 As shown in Figure 1 is a top view of a display panel provided by the prior art, Figure 2 is Figure 1 A1-A2 direction cross-sectional structure diagram, the display panel includes a substrate 100, a display function layer 200, a dam L1, an encapsulation layer 400, a touch layer 500, a filling layer 600, a polarizer 700, and a cover plate 800, the substrate 100 includes a display area AA and a non-display area NA located on at least one side of the display area AA, Figure 2 only part of the display area AA and part of the non-display area NA are shown. The display function layer 200 is located on one side of the substrate 100, the dam L1 is located on the non-display area NA away from the display function layer 200 on the side of the display function layer 200, and is arranged around the display area AA. The side of the dam L1 close to the display area AA is provided with a groove T01, and the side of the dam L1 away from the display area AA is provided with a groove T02. The encapsulation layer 400 exemplarily includes a first inorganic layer 401, a second inorganic layer 402, and an organic layer 403, and the organic layer 403 is located between the first inorganic layer 401 and the second inorganic layer 402. The touch layer 500 includes a touch electrode 501 and a touch signal wire 502, and the touch signal wire 502 needs to pass through the side wall of the dam L1 close to the display area AA, the top surface of the dam L1 away from the display function layer 200, and the side wall of the dam L1 away from the display area AA in sequence to reach the solder pad of the binding area 900 and be connected therewith.

[0069] In the process of implementing the present application, the inventors found that the prior art has the following problems: in the prior art, before forming the touch signal wire 502, the bottom of the groove T01 on the side of the dam L1 close to the display area AA and the bottom of the groove T02 on the side of the dam L1 away from the display area AA are not provided with other film layers to alleviate the relatively large slope of the dam L1, thereby resulting in that the forming quality of the touch signal wire 502 covering the side wall of the dam L1 is not high and is prone to disconnection.

[0070] In view of the above technical problems, the embodiments of the present application provide the following technical solutions:

[0071] As shown in Figure 3 andFigure 4 As shown, Figure 3 is a top view of a display panel provided by an embodiment of the present application, Figure 4 is Figure 3 A1-A2 direction, the display panel comprises: a substrate 100, the substrate 100 comprising a display area AA and a non-display area NA; a display function layer 200, the display function layer 200 being located on one side of the substrate 100; a blocking structure L0, the blocking structure L0 being located on the side of the display function layer 200 away from the substrate 100 and in the non-display area NA; the blocking structure L0 comprising a dam L1 and a buffer structure L2; an encapsulation layer 400, the encapsulation layer 400 being located on the side of the blocking structure L0 away from the display function layer 200. Wherein, the buffer structure L2 is located on the groove bottom surface of the dam L1 on the side close to the display area AA and / or on the groove bottom surface on the side away from the display area AA; the height of the buffer structure L2 is less than the height of the dam L1, for reducing the slope of the sidewall of the dam L1, it should be noted that the slope and the slope angle in the present application are well-known definitions, the slope can be understood as the ratio of the vertical height and the horizontal width of the slope surface, and the slope angle is the tangent value of the slope.

[0072] For example, in the present embodiment, the blocking structure L0 is arranged around the display area AA, for preventing water and oxygen from invading the display area AA, so as to ensure the display effect of the display panel.

[0073] As Figure 4 shown, when the dam L1 comprises at least a first dam 300 and a second dam 301, the buffer structure L2 is located on the groove bottom surface of the dam L1 on the side close to the display area AA and / or on the groove bottom surface on the side away from the display area AA, including the following schemes:

[0074] The buffer structure L2 is located on the groove T03 bottom surface of the first dam 300 on the side close to the display area AA and / or on the groove T04 bottom surface on the side away from the display area AA; and the buffer structure L2 is located on the groove T04 bottom surface of the second dam 301 on the side close to the display area AA and / or on the groove T05 bottom surface on the side away from the display area AA. In the present embodiment, only the buffer structure L2 is located on the groove T03 bottom surface of the first dam 300 on the side close to the display area AA, the buffer structure L2 is located on the groove T04 bottom surface of the first dam 300 on the side away from the display area AA, the buffer structure L2 is located on the groove T04 bottom surface of the second dam 301 on the side close to the display area AA, and the buffer structure L2 is located on the groove T05 bottom surface of the second dam 301 on the side away from the display area AA. It should be noted that the groove T04 on the side away from the display area AA of the first dam 300 and the groove T04 on the side close to the display area AA of the second dam 301 are the same groove, i.e. the groove between the first dam 300 and the second dam 301.

[0075] The technical solution provided in this embodiment of the invention provides a buffer structure L2 on the bottom surface of the groove on the side of the dam L1 near the display area AA, and / or on the bottom surface of the groove on the side away from the display area AA. The height of the buffer structure L2 is less than the height of the dam L1, which reduces the depth of the groove on the side wall of the dam L1, thereby reducing the slope of the side wall of the dam L1 and improving the formation quality of the touch signal trace 502 covering the side wall of the dam L1, thus avoiding the problem of easy breakage.

[0076] In this embodiment of the invention, the height of the buffer structure L2 is less than the height of the dam L1, which can reduce the slope angle of the side wall of the dam L1 to less than or equal to 20°, thereby improving the formation quality of the touch signal trace 502 covering the side wall of the dam L1 and avoiding the problem of easy breakage.

[0077] The specific structure of the buffer structure L2 is described below.

[0078] The first structure of the L2 buffer is as follows:

[0079] Optionally, based on the above technical solutions, such as Figure 3 and Figure 4 as well as Figure 5 and Figure 6 As shown, Figure 4 yes Figure 3 A schematic diagram of a cross-sectional structure along the A1-A2 direction. Figure 5 for Figure 3 An enlarged top view of a first dam, a second dam, and a buffer structure. Figure 6 for Figure 5 A cross-sectional structural diagram along the B1-B2 direction shows that the buffer structure L2 includes multiple strip structures 306, which point from the display area AA to the non-display area NA (i.e., Figure 5 The multiple strip structures 306 and the dam L1 are arranged at a first preset distance interval in the Y direction of the display area AA pointing to the non-display area NA. The minimum distance between them is the second preset distance. The first preset distance is greater than the minimum exposure distance of the photolithography process, and the second preset distance is greater than the minimum exposure distance of the photolithography process.

[0080] In this embodiment, the dam L1, including the first dam 300 and the second dam 301, is used as an example for description. The direction from the display area AA to the non-display area NA is the Y direction.

[0081] It should be noted that, Figure 5 Only the structures of the first dam 300, the second dam 301, and the multiple strip structures 306 included in the buffer structure L2 are shown. Figure 6The substrate 100, the display function layer 200, the first inorganic layer 401 and the second inorganic layer 402 included in the encapsulation layer 400, the filling layer 600, the polarizer 700, and the cover plate 800 are also shown.

[0082] Specifically, the plurality of strip structures 306 and the dam L1 are arranged at intervals, which reduces the depth of the groove of the sidewall of the dam L1, thereby reducing the slope of the sidewall of the dam L1, improving the formation quality of the touch signal trace 502 covering the sidewall of the dam L1, and avoiding the problem of easy disconnection. In addition, the adjacent two strip structures 306 are arranged at a first preset distance greater than the minimum exposure pitch of the photolithography process in the direction from the display area AA to the non-display area NA (i.e., the Y direction in Figure 5 The plurality of strip structures 306 and the dam L1 are arranged at a second preset distance greater than the minimum exposure pitch of the photolithography process in the direction from the display area AA to the non-display area NA. It is illustrated that the plurality of strip structures 306 and the dam L1 are arranged at intervals in the direction from the display area AA to the non-display area NA, and the adjacent two strip structures 306 are also arranged at intervals. When the strip structure 306 is an organic material, the above technical solution can prevent water vapor from entering the display area AA from the non-display area NA along the strip structure 306, thereby improving the reliability of the display panel.

[0083] Preferably, the slope angles of the plurality of strip structures 306 close to the sidewall of the display area AA and away from the sidewall of the display area AA are less than 90°, which can further reduce the slope of the sidewall of the dam L1, improve the formation quality of the touch signal trace 502 covering the sidewall of the dam L1, and avoid the problem of easy disconnection.

[0084] For example, the minimum exposure pitch of the photolithography process is 2 microns, and the first preset distance and the second preset distance can be specifically set in the range of greater than or equal to 3 microns and less than or equal to 5 microns, such as 3 microns, 3.5 microns, 4 microns, 4.5 microns, or 5 microns.

[0085] The second structure of the buffer structure L2 is as follows:

[0086] Optionally, based on the above technical solution, as Figure 3 and Figure 7 and Figure 8 and Figure 9 shown, Figure 8 is another enlarged view of the top view of the first dam, the second dam, and the buffer structure in Figure 3 Figure 9 is a cross-sectional structure schematic view of the B1-B2 direction in Figure 8 The buffer structure L2 includes a plurality of comb tooth structures 305, and the plurality of comb tooth structures 305 are arranged at intervals in the direction perpendicular to the display area AA and pointing to the non-display area NA (i.e., the X direction in Figure 8 ​The third preset distance is less than the minimum value of the exposure pitch of the photoetching process.

[0087] In the embodiment, the dam L1 includes the first dam 300 and the second dam 301. The Y direction is the direction from the display area AA to the non-display area NA, and the X direction is the direction perpendicular to the display area AA and pointing to the non-display area NA.

[0088] It should be noted that, Figure 8 Only the first dam 300, the second dam 301, and the plurality of comb structures 305 included in the buffer structure L2 are shown. Figure 9 The substrate 100, the display functional layer 200, the first inorganic layer 401 and the second inorganic layer 402 included in the encapsulation layer 400, the filling layer 600, the polarizer 700, and the cover plate 800 are also shown.

[0089] Specifically, the buffer structure L2 includes the plurality of comb structures 305. The buffer structure L2 including the plurality of comb structures 305 reduces the depth of the groove of the sidewall of the dam L1, thereby reducing the slope of the sidewall of the dam L1, improving the formation quality of the touch signal wire 502 covering the sidewall of the dam L1, and avoiding the problem of easy disconnection. The plurality of comb structures 305 are arranged at the third preset distance less than the minimum value of the exposure pitch of the photoetching process in the direction perpendicular to the display area AA and pointing to the non-display area NA (i.e., the X direction in the figure). Figure 8 The third preset distance is less than the minimum value of the exposure pitch of the photoetching process.

[0090] Preferably, the plurality of comb structures 305 are connected with the dam L1, and the thickness of the plurality of comb structures 305 gradually decreases in the direction away from the dam L1 connected therewith, i.e., the slope angle of the plurality of comb structures 305 away from the sidewall of the dam L1 connected therewith is less than 90°, which can further reduce the slope of the sidewall of the dam L1, improve the formation quality of the touch signal wire 502 covering the sidewall of the dam L1, and avoid the problem of easy disconnection.

[0091] The third structure of the buffer structure L2 is as follows:

[0092] Optionally, on the basis of the above technical solutions, as shown in Figure 3 and Figure 10 and Figure 11 and Figure 12 , Figure 10 is Figure 3A cross-sectional structure schematic view in the A1-A2 direction, Figure 11 A cross-sectional structure schematic view in the A1-A2 direction, Figure 3 A cross-sectional structure schematic view in the A1-A2 direction, Figure 12 A cross-sectional structure schematic view in the A1-A2 direction, Figure 11 A cross-sectional structure schematic view in the A1-A2 direction, the buffer structure L2 comprises a plurality of comb structures 305, the plurality of comb structures 305 are connected with the dam L1, the plurality of comb structures 305 are arranged at a third preset distance in a direction perpendicular to the display area AA and pointing to the non-display area NA (i.e. Figure 11 X direction in the A1-A2 direction), and the third preset distance is less than the minimum exposure pitch of the photolithography process; the buffer structure L2 further comprises a plurality of strip structures 306, the plurality of strip structures 306 are arranged at a first preset distance in a direction pointing to the non-display area NA from the display area AA (i.e. Figure 11 Y direction in the A1-A2 direction), and the minimum distance between the plurality of strip structures 306 and the plurality of comb structures 305 in the direction pointing to the non-display area NA from the display area AA (i.e. Figure 11 Y direction in the A1-A2 direction) is a fourth preset distance, the first preset distance is greater than the minimum exposure pitch of the photolithography process, and the fourth preset distance is greater than the minimum exposure pitch of the photolithography process.

[0093] In this embodiment, the dam L1 comprises the first dam 300 and the second dam 301 as an example. The direction pointing to the non-display area NA from the display area AA is the Y direction, and the direction perpendicular to the direction pointing to the non-display area NA from the display area AA is the X direction.

[0094] It should be noted that, Figure 11 Only the first dam 300, the second dam 301, and the plurality of comb structures 305 included in the buffer structure L2 are shown. Figure 12 The substrate 100, the display functional layer 200, the first inorganic layer 401 and the second inorganic layer 402 included in the encapsulation layer 400, the filling layer 600, the polarizer 700, and the cover plate 800 are also shown.

[0095] Specifically, the plurality of comb structures 305 reduces the depth of the groove of the side wall of the dam L1, thereby reducing the slope of the side wall of the dam L1, improving the formation quality of the touch signal line 502 covering the side wall of the dam L1, and avoiding the problem of easy disconnection. Moreover, the plurality of comb structures 305 are arranged at a third preset distance in a direction perpendicular to the display area AA and pointing to the non-display area NA (i.e. Figure 11The third preset distance is less than the minimum exposure pitch of the photolithography process, so that a relatively gentle slope is formed between the two adjacent comb tooth structures 305, and the problem of broken lines of the touch signal wire 502 at the position between the two adjacent comb tooth structures 305 can be avoided. The plurality of strip structures 306 and the dam L1 are arranged at intervals, which reduces the depth of the groove on the side wall of the dam L1, thereby reducing the slope of the side wall of the dam L1, improving the formation quality of the touch signal wire 502 covering the side wall of the dam L1, and avoiding the problem of easy broken lines. And the direction in which the two adjacent strip structures 306 point to the non-display area NA in the display area AA (i.e. Figure 11 The Y direction in the display area AA) is greater than the minimum exposure pitch of the photolithography process, and the plurality of strip structures 306 and the plurality of comb tooth structures 305 are arranged at intervals in the direction in which the display area AA points to the non-display area NA (i.e. Figure 11 The Y direction in the display area AA) is greater than the minimum exposure pitch of the photolithography process, and the plurality of strip structures 306 and the plurality of comb tooth structures 305 are arranged at intervals in the direction in which the display area AA points to the non-display area NA (i.e.

[0096] For example, the minimum exposure pitch of the photolithography process is 2 microns, and the third preset distance can be selected to be 1.5 microns or 1.4 microns, but is not limited to this. The first preset distance and the fourth preset distance can be set to be greater than or equal to 3 microns and less than or equal to 5 microns, for example, 3 microns, 4 microns, or 5 microns.

[0097] Preferably, in the embodiment, the slope angles of the plurality of strip structures 306 close to the side wall of the display area AA and away from the side wall of the display area AA are less than 90°, which can further reduce the slope of the side wall of the dam L1, improve the formation quality of the touch signal wire 502 covering the side wall of the dam L1, and avoid the problem of easy broken lines.

[0098] In order to simplify the preparation process of the buffer structure L2 and the dam L1, the present embodiment further provides the following technical solutions: optionally, on the basis of the above technical solutions, the dam L1 comprises at least two sub-layers arranged in layers; and the buffer structure L2 and part of the film layer of the dam L1 are located in the same layer and have the same material.

[0099] Specifically, the partial film layers of the buffer structure L2 and the dam L1 are located in the same layer and have the same material, and the preparation of the buffer structure L2 is completed in the process of completing the dam L1, thereby simplifying the preparation process and reducing the preparation cost. The dam L1 includes at least two sub-layers arranged in a stack, and the area of the at least two sub-layers gradually decreases in the direction in which the substrate 100 points to the display functional layer 200, so as to ensure that the sidewall of the dam L1 forms a slope with a certain angle.

[0100] Optionally, based on the above technical solutions, as shown in Figure 4 、 Figure 6 、 Figure 7 、 Figure 9 、 Figure 10 and Figure 12 , the dam L1 includes at least a first dam 300 and a second dam 301, the first dam 300 is located on the side of the second dam 301 close to the display area AA, a groove T04 is arranged between the first dam 300 and the second dam 301, and the height of the second dam 301 is greater than the height of the first dam 300; the second dam 301 includes a first sub-layer 302, a second sub-layer 303 and a third sub-layer 304 arranged in a stack in the direction in which the substrate 100 points to the display functional layer 200; the first dam 300 includes the second sub-layer 303 and the third sub-layer 304 arranged in a stack in the direction in which the substrate 100 points to the display functional layer 200; and the buffer structure L2 is located at least one position of the groove bottom surface between the first dam 300 close to the display area AA, the first dam 300 and the second dam 301, and the side of the second dam 301 away from the first dam 300.

[0101] For example, in the embodiment of the present application, only the buffer structure L2 located at the groove T03 bottom surface of the first dam 300 close to the display area AA, the groove T04 bottom surface between the first dam 300 and the second dam 301, and the groove T05 bottom surface located at the side of the second dam 301 away from the first dam 300 is shown in the figure.

[0102] Specifically, the dam L1 at least includes a first dam 300 and a second dam 301, and in this embodiment, the dam L1 includes the first dam 300 and the second dam 301 as an example. Taking the organic layer 403 as an example of the inkjet printing layer, the first dam 300 and the second dam 301 can avoid the ink overflow to the side of the second dam 301 away from the display area AA during the inkjet printing process of the organic layer 403 of the packaging layer 400, thereby ensuring the packaging effect. The first dam 300 can also block the external water and oxygen from invading the display area AA, thereby ensuring the display effect of the display panel. The height of the second dam 301 is greater than the height of the first dam 300, and the second dam 301 has the effect of further blocking the overflow of the organic layer 403 and the invasion of water and oxygen into the display area AA. The more the number of dams included in the dam L1, the better the effect of blocking the overflow of the organic layer 403 and the invasion of water and oxygen into the display area AA.

[0103] The following specifically introduces that the sub-layer included in the dam L1 can be located in the same layer as part of the film layer of the display functional layer 200 located in the display area AA, and the materials are the same.

[0104] Preferably, the buffer structure L2 and any one of the first sub-layer 302, the second sub-layer 303, and the third sub-layer 304 are located in the same layer, and the materials are the same.

[0105] Specifically, the first sub-layer 302, the second sub-layer 303, and the third sub-layer 304 constitute the second dam 301, and the second sub-layer 303 and the third sub-layer 304 constitute the first dam 300; the buffer structure L2 can be located in the same layer as the first sub-layer 302, and the materials are the same; the buffer structure L2 can be located in the same layer as the second sub-layer 303, and the materials are the same; or the buffer structure L2 can also be located in the same layer as the third sub-layer 304, and the materials are the same. In the process of preparing the dam L1, the preparation of the buffer structure L2 is completed, which simplifies the preparation process and reduces the preparation cost. Alternatively, on the basis of the above technical solutions, as shown in Figure 13 Figure 13 is Figure 3 is a cross-sectional structure diagram of the display area C1-C2 direction in FIG. 1, and the display functional layer 200 includes a drive circuit layer 201, a planarization layer 202, a pixel definition layer 203, a support layer 204, and a display layer 205; the drive circuit layer 201 is located on one side of the substrate 100; the planarization layer 202 is located on the side of the drive circuit layer 201 away from the substrate 100; the pixel definition layer 203 is located on the side of the planarization layer 202 away from the drive circuit layer 201, wherein the pixel definition layer 203 includes a plurality of openings; the support layer 204 is located on the side of the pixel definition layer 203 away from the planarization layer 202; the display layer 205 is located in the openings of the pixel definition layer 203; as shown in Figure 4 , Figure 6 , Figure 7 , Figure 9 ​、 Figure 10 and Figure 12 As shown in FIG. 3, the first sub-layer 302 and the planarization layer 202 are in the same layer and have the same material; the second sub-layer 303 and the pixel definition layer 203 are in the same layer and have the same material; and the third sub-layer 304 and the support layer 204 are in the same layer and have the same material.

[0106] Specifically, the planarization layer 202, the pixel definition layer 203 and the support layer 204 are usually made of organic material, i.e., the sub-layers included in the dam L1 including at least the first dam 300 and the second dam 301 are organic layers. Since the partial film layers of the buffer structure L2 and the dam L1 are in the same layer and have the same material, the buffer structure L2 is also made of organic material. The preparation of the buffer structure L2 and the dam L1 is completed at the same time as the formation of the planarization layer 202, the pixel definition layer 203 and the support layer 204, which simplifies the preparation process and reduces the preparation cost.

[0107] Preferably, when the first sub-layer 302 and the planarization layer 202 are in the same layer and have the same material; the second sub-layer 303 and the pixel definition layer 203 are in the same layer and have the same material; and the third sub-layer 304 and the support layer 204 are in the same layer and have the same material, if the pixel definition layer 203 and the support layer 204 are prepared by the same half-tone mask (Half-tone Mask), the buffer structure L2 and the first sub-layer 302 can be set to be in the same layer and have the same material, and be prepared by a common mask, thereby reducing the difficulty of simultaneous preparation of the partial sub-layers of the buffer structure L2 and the dam L1.

[0108] Optionally, in the above technical solution, in combination with Figure 13 and Figure 4 、 Figure 6 、 Figure 7 、 Figure 9 、 Figure 10 and Figure 12 The driving circuit layer 201 includes an insulating layer 2010, a driving circuit and a plurality of signal lines located inside the insulating layer 2010, the plurality of signal lines are electrically connected with the driving circuit, the driving circuit is located in the display area AA, and the plurality of signal lines are located in the non-display area NA; at least part of the plurality of signal lines are located on the side of the first dam 300 close to the display area AA, and at least part of the plurality of signal lines are located between the first dam 300 and the second dam 301 and are arranged at intervals in the direction from the display area AA to the non-display area NA.

[0109] Specifically, at least part of the plurality of signal lines are located at least on one side of the first dam 300 close to the display area, and at least part of the plurality of signal lines are located between the first dam 300 and the second dam 301, and are arranged at intervals in the direction from the display area AA to the non-display area NA. Since the signal lines are located inside the insulating layer 2010, the surface of the insulating layer 2010 away from the signal lines has an acute angle recess S0. The buffer structure L2 is made of an organic material and has good flexibility and filling performance, which alleviates the surface unevenness caused by the acute angle recess S0. The problem of easy disconnection of the touch signal wire 502 when passing through the area corresponding to the acute angle recess S0 at the bottom surface of the side wall groove of the first dam 300 and the second dam 301 can be avoided, and the delamination of the inorganic layer at the bottom surface of the side wall groove of the first dam 300 and the second dam 301 can also be avoided, thereby avoiding water and oxygen intrusion, and further ensuring the packaging effect of the packaging layer 400.

[0110] It should be noted that the driving circuit is not explicitly shown in the drawings of the embodiments of the present application, and is composed of a storage capacitor and a plurality of thin film transistors, and is used to provide driving signals for the light emitting units included in the display layer 205. For example, the plurality of signal lines in the driving circuit layer 201 include first signal lines made of the first metal layer M1 and second signal lines made of the second metal layer M2. The first metal layer M1 and the second metal layer M2 can be located in the same layer as the metal layer provided in the driving circuit and have the same material, so as to simplify the preparation process and reduce the preparation cost. The first signal lines and the second signal lines can be used as data lines or scan lines electrically connected to the driving circuit.

[0111] As Figure 4 , Figure 6 , Figure 7 , Figure 9 , Figure 10 and Figure 12As shown, the first signal line prepared by the first metal layer M1 and the second signal line prepared by the second metal layer M2 are located at least on one side of the first dam 300 close to the display area AA and at least between the first dam 300 and the second dam 301, and are arranged at intervals in the direction of the display area AA pointing to the non-display area NA. The surface of the insulating layer 2010 away from the first signal line prepared by the first metal layer M1 and the second signal line prepared by the second metal layer M2 has an acute angle recess S0 at the adjacent two signal lines. When the touch signal wire 502 passes through the groove bottom surface at the side wall of the first dam 300 and the second dam 301, the flexibility and filling performance of the first inorganic layer 401 and the second inorganic layer 402 are not good, and the touch signal wire 502 is prone to breakage when passing through the area corresponding to the acute angle recess S0 at the side wall of the first dam 300 and the second dam 301. In the embodiment, the planarization layer 202, the pixel definition layer 203 and the support layer 204 are usually prepared by organic materials, so that the sub-layers included in the first dam 300 and the second dam 301 are organic layers. Since the buffer structure L2 and part of the film layer of the dam L1 are in the same layer and have the same material, the buffer structure L2 is also prepared by organic material, so that the buffer structure L2 has good flexibility and filling performance, and can avoid the problem of easy breakage when the touch signal wire 502 passes through the area corresponding to the acute angle recess S0 at the side wall of the first dam 300 and the second dam 301. Moreover, the buffer structure L2 is prepared by organic material and has good flexibility and filling performance, which can avoid delamination between the first inorganic layer 401 and the second inorganic layer 402 at the groove bottom surface of the side wall of the first dam 300 and the second dam 301, thereby avoiding water and oxygen invasion, and further ensuring the packaging effect of the packaging layer 400.

[0112] Optionally, in combination with Figure 13 and Figure 4 , Figure 6 , Figure 7 , Figure 9 , Figure 10 and Figure 12 , the driving circuit layer 201 also shows a third signal line prepared by the third metal layer M3, which can be used as a power signal line. The third signal line prepared by the third metal layer M3 is located on the side of the insulating layer 2010 away from the substrate 100.

[0113] Optionally, in the above technical solution, as Figure 4As shown, the encapsulation layer 400 is located on the side of the blocking structure L0 away from the display functional layer 200, and the encapsulation layer 400 comprises inorganic layers (for example, the inorganic layers comprise a first inorganic layer 401 and a second inorganic layer 402) and an organic layer 403 arranged in a stack; the organic layer 403 is located on the side of the blocking structure L0 close to the display area AA, the inorganic layers are located in the display area AA and the non-display area NA, and cover the blocking structure L0; the touch layer 500 is located on the side of the encapsulation layer 400 away from the blocking structure L0, and the touch layer 500 comprises a touch electrode 501 and a touch signal trace 502; the touch electrode 501 is located in the display area AA, and the touch signal trace 502 is located in the non-display area NA and covers the blocking structure L0.

[0114] Specifically, the inorganic layers are located in the display area AA and the non-display area NA, and cover the blocking structure L0, for blocking external water and oxygen from invading the display area AA, thereby ensuring the display effect of the display panel. The touch electrode 501 is located in the display area AA, for realizing a display panel with a touch function. The touch signal trace 502 is located in the non-display area NA and covers the blocking structure L0, the height of the buffer structure L2 in the blocking structure L0 is less than the height of the dam L1, the depth of the groove in the side wall of the dam L1 is reduced, thereby reducing the slope of the side wall of the dam L1, improving the formation quality of the touch signal trace 502 covering the side wall of the dam L1, and avoiding the problem of easy disconnection.

[0115] The embodiment of the present application also provides a display device, Figure 14 A structural schematic diagram of a display device provided by the embodiment of the present application is shown in FIG. 1. Figure 14 The display device 01a comprises the display panel 01b described in the above embodiment, and therefore, the display device provided by the embodiment of the present application also has the beneficial effects described in the above embodiment, which will not be described herein. For example, the display device can be a mobile phone, a computer, or an electronic device such as a wearable device, and the specific form of the display device is not limited in the embodiment of the present application.

[0116] It should be noted that the above is only the preferred embodiment of the present application and the applied technical principles. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and those skilled in the art can make various obvious changes, readjustments and substitutions without departing from the protection scope of the present application. Therefore, although the present application has been described in more detail through the above embodiments, the present application is not limited to the above embodiments, and can include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.

Claims

1. A display panel, characterized by, The display panel comprises: a substrate comprising a display area and a non-display area; a display functional layer on one side of the substrate; a barrier structure on the side of the display functional layer away from the substrate and in the non-display area; the barrier structure comprises a dam and a buffer structure; an encapsulation layer on the side of the barrier structure away from the display functional layer; wherein the buffer structure is on the side of the dam close to and / or away from the display area, and the height of the buffer structure is less than that of the dam; the buffer structure comprises a plurality of comb structures, which are arranged at a minimum distance of a third preset distance in a direction perpendicular to the display area and pointing to the non-display area, and the third preset distance is less than the minimum exposure distance of a photolithography process; the buffer structure further comprises a plurality of strip structures, which are arranged at a first preset distance in a direction of the display area and pointing to the non-display area, and the minimum distance of the plurality of strip structures and the plurality of comb structures in the direction of the display area and pointing to the non-display area is a fourth preset distance, the first preset distance is greater than the minimum exposure distance of the photolithography process, and the fourth preset distance is greater than the minimum exposure distance of the photolithography process.

2. The display panel of claim 1, wherein the plurality of comb structures are connected to the dam, and the slope angle of the plurality of comb structures away from the sidewall of the dam is less than 90°.

3. The display panel of any of claims 1-2, wherein, the dam comprises at least two sub-layers arranged in a stack; at least part of the film layers of the buffer structure and the dam are in the same layer.

4. The display panel of claim 3, wherein, the dam comprises at least a first dam and a second dam, the first dam is on the side of the second dam close to the display area, a groove is arranged between the first dam and the second dam, and the height of the second dam is greater than that of the first dam; the second dam comprises a first sub-layer, a second sub-layer and a third sub-layer arranged in a stack in the direction of the substrate pointing to the display functional layer; the first dam comprises the second sub-layer and the third sub-layer arranged in a stack in the direction of the substrate pointing to the display functional layer; the buffer structure is located at least at the groove bottom surface of at least one of the side of the first dam close to the display area, between the first dam and the second dam, and the side of the second dam away from the first dam.

5. The display panel of claim 4, wherein, the buffer structure and any one of the first sub-layer, the second sub-layer and the third sub-layer are in the same layer.

6. The display panel of claim 5, wherein, the display functional layer comprises a drive circuit layer, a planarization layer, a pixel definition layer, a support layer and a display layer; the drive circuit layer is on one side of the substrate; the planarization layer is on the side of the drive circuit layer away from the substrate; the pixel definition layer is on the side of the planarization layer away from the drive circuit layer, wherein the pixel definition layer comprises a plurality of openings; the support layer is on the side of the pixel definition layer away from the drive circuit layer; the display layer is in the openings of the pixel definition layer; The first sub-layer and the planarization layer are in the same layer; The second sub-layer and the pixel defining layer are in the same layer; The third sub-layer and the support layer are in the same layer.

7. The display panel of claim 6, wherein, The driving circuit layer comprises an insulating layer, a driving circuit and a plurality of signal lines in the insulating layer, the plurality of signal lines are electrically connected with the driving circuit, the driving circuit is located in the display area, the plurality of signal lines are at least located in the non-display area; at least part of the plurality of signal lines are located on one side of the first dam close to the display area, at least part of the plurality of signal lines are located between the first dam and the second dam, and at least part of the plurality of signal lines are arranged in the display area in a direction pointing to the non-display area. 8.The display panel of any one of claims 1-2 or 4-7, wherein, The encapsulation layer comprises inorganic layers and organic layers arranged in a stack; the organic layer is located on one side of the barrier structure close to the display area, the inorganic layer is located in the display area and the non-display area, and covers the barrier structure.

9. The display panel of claim 8, wherein, The display panel further comprises a touch layer, the touch layer is located on one side of the encapsulation layer away from the barrier structure, the touch layer comprises a touch electrode and a touch signal trace, the touch electrode is located in the display area, the touch signal trace is at least located in the non-display area, and covers the barrier structure.

10. A display device, characterized by comprising: The display panel comprises any one of claims 1-9.

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