Method for measuring characteristics of material between two traces

Abstract

The method for measuring the characteristic of the material between the two wires comprises the steps that a first structure and a first parameter of the two wires are determined, the first structure comprises the two wires arranged on a first insulating layer, the material to be measured is arranged between the two wires, and the first parameter comprises the wire width W1 of the two wires; a second structure and a second parameter of the single wire are determined, the second structure comprises that the single wire is arranged on a second insulating layer, the second insulating layer and the first insulating layer are made of the same material, the second parameter comprises the wire width W2 of the single wire, and the wire width W2 is equal to the wire width W1; obtaining a dielectric constant and a loss factor of a material of the second insulating layer under the condition that signals with different frequencies are applied to a single wire; obtaining dielectric constants of the to-be-measured material under the condition that signals with different frequencies are applied to the two wires; and in combination with the dielectric constant and the loss factor of the material of the second insulating layer under the condition that the signals with different frequencies are applied to the single wire, obtaining the loss factor of the to-be-measured material under the condition that the signals with different frequencies are applied to the two wires.

Description

Technical Field

[0001] At least one embodiment of the present disclosure relates to a method for measuring material properties between two traces. Background Art

[0002] With the rapid development of artificial intelligence (AI), 5G communications, and autonomous driving, the design requirements for high-bandwidth, high-computing integrated circuit chips (ICs) are becoming increasingly higher. However, with the increase in high-bandwidth demand, higher requirements are placed on the quality of high-speed IO signals in chip packaging design, so the electrical properties of packaging dielectric materials are increasingly attracting the attention of engineers.

[0003] The main material parameters of package dielectric materials that affect electrical performance are DK (dielectric constant or εr) and DF (loss factor, loss tangent). The industry has proposed many methods for testing DK / DF of package dielectric materials, but these methods often ignore the impact of the electrical properties of the materials between metal traces, resulting in inaccurate test / simulation results. Summary of the invention

[0004] At least one embodiment of the present disclosure provides a method for measuring material properties between two traces, the method comprising: determining a first structure and a first parameter of the two traces, wherein the first structure comprises the two traces being arranged on a first insulating layer, and there is a material to be measured between the two traces, and the first parameter comprises a line width W1 of the two traces; determining a second structure and a second parameter of a single trace, wherein the second structure comprises the single trace being arranged on a second insulating layer, the second insulating layer being made of the same material as the first insulating layer, and the second parameter comprises a line width W2 of the single trace, and the line width W2 is equal to the line width W1; obtaining a dielectric constant and a loss factor of a material of the second insulating layer when signals of different frequencies are applied to the single trace; obtaining a dielectric constant of the material to be measured when signals of different frequencies are applied to the two traces; and obtaining a loss factor of the material to be measured when signals of different frequencies are applied to the two traces in combination with the dielectric constant and the loss factor of the material of the second insulating layer when signals of different frequencies are applied to the single trace. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0006] Figure 1 A flow chart of a method for measuring material properties between two traces provided in at least one embodiment of the present disclosure;

[0007] Figure 2 A schematic diagram of a first structure provided for at least one embodiment of the present disclosure;

[0008] Figure 3 A schematic diagram of a second structure provided for at least one embodiment of the present disclosure;

[0009] Figure 4 A schematic diagram of forming a coupling capacitor in a second structure provided in at least one embodiment of the present disclosure;

[0010] Figure 5A-5F A schematic diagram of changing the spacing between two traces in a first structure provided for at least one embodiment of the present disclosure; and

[0011] Figure 6 A schematic diagram of forming a coupling capacitor in a second structure provided in at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0013] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons of ordinary skill in the field to which the present disclosure belongs. The words "first", "second" and similar terms used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Inside", "outside", "upper", "lower" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0014] In chip packaging structures, high-frequency signals are more susceptible to the influence of dielectric materials and processing technology than low-frequency signals. Accurately measuring the performance parameters of dielectric materials can more accurately evaluate signal quality and reduce signal loss and distortion. At low frequencies, due to the skin effect, the series resistance per unit length increases with the square root of the frequency; at high frequencies, due to the influence of dielectric loss, the parallel conductance per unit length increases with the frequency, resulting in an increase in attenuation with increasing frequency; therefore, the attenuation of high-frequency sine waves is greater than that of low-frequency ones. With the increasing design requirements for high-frequency and high-speed signals, high-frequency dielectric loss is receiving more and more attention from engineers.

[0015] Taking microstrip differential line as an example, when the signal is stimulated externally, the dielectric materials between the signals and between the signal and the reference ground will generate direct current due to ion movement and alternating current due to dipole movement, thus forming Figure 1 The electric and magnetic fields are shown. The relative dielectric constant of the material affects the capacitance, and the loss factor of the material causes the loss. Due to the limitations of the packaging process, the material between the signals and the material between the signals and the reference ground are not completely consistent, so it is urgent to accurately measure the dielectric constant and loss factor of the dielectric material of each part.

[0016] Currently, there are many methods in the industry for testing the properties of specific materials, but these methods all ignore the impact of materials between signals on signals, resulting in a deviation between the signal quality of simulation / testing and the actual situation.

[0017] At least one embodiment of the present disclosure provides a method for measuring material properties between two traces. This method can, for example, accurately measure the dielectric constant and loss factor of the dielectric material between microstrip differential lines in a chip packaging structure to more accurately evaluate signal quality and reduce signal loss and distortion.

[0018] The method for measuring material characteristics between two traces provided by the embodiment of the present disclosure is described below through several specific embodiments.

[0019] At least one embodiment of the present disclosure provides a method for measuring material properties between two traces. Figure 1 A flow chart of the method is shown, as Figure 1 As shown, the method includes steps S101 to S105.

[0020] Step S101: Determine the first structure and first parameters of two routing lines.

[0021] For example, the first structure includes the two wirings arranged on the first insulating layer, there is a material to be measured between the two wirings, and the first parameter includes the line width W1 of the two wirings.

[0022] For example, in some embodiments, the two lines L1 and L2 are microstrip differential lines in a chip packaging structure. In other embodiments, the two lines L1 and L2 may also be lines with similar structures in other electronic devices.

[0023] For example, when the two lines L1 and L2 are microstrip differential lines in a chip packaging structure, before determining the first structure and first parameters of the two lines, the chip packaging structure and its design parameters can be determined in advance, thereby determining the first structure and first parameters of the microstrip differential lines in the structure.

[0024] For example, Figure 2 A schematic diagram of a first structure of the two traces is shown, such as Figure 2 As shown, two lines L1 and L2 are arranged on the first insulating layer 11, and there is a material X to be measured between the two lines L1 and L2. For example, the first structure also includes a first reference ground layer 12 and first reference ground lines G1 and G2, the first insulating layer 11 is arranged on the first reference ground layer 12, and the first reference ground lines G1 and G2 and the two lines L1 and L2 are arranged on a side of the first insulating layer 11 away from the first reference ground layer 12. For example, the first reference ground line includes a first reference ground sub-line G1 and a second reference ground sub-line G2, and the first reference ground sub-line G1 and the second reference ground sub-line G2 are respectively arranged on both sides of the two lines L1 and L2.

[0025] For example, Figure 2 As shown, the first parameter includes the line width W1 of the two lines L1 and L2. For example, the line width W1 of the two lines L1 and L2 is substantially the same, and the value of the line width W1 is assumed to be W, then the value range of W is 20μm-40μm, such as 20μm, 40μm, such as 25μm-35μm, such as 25μm, 30μm or 35μm, etc. Of course, in some embodiments, the line width W may also adopt other values ​​according to requirements, and the embodiments of the present disclosure do not limit the specific value of the line width W.

[0026] For example, Figure 2 As shown, the first parameter also includes the thickness H1 of the two lines L1 and L2. For example, the value range of the thickness H1 is 10μm-20μm, such as 10μm, 12μm, 15μm or 18μm, 20μm, etc. Of course, in some embodiments, the thickness H1 can also adopt other values ​​according to requirements, and the embodiments of the present disclosure do not limit the specific value of the thickness H1.

[0027] For example, Figure 2As shown, the first parameter also includes that the spacings D1 and D2 between the first reference ground sub-line G1 and the second reference ground sub-line and the two traces L1 and L2, respectively, are greater than 16W, that is, greater than 16 times the line width W1. For example, in some examples, the spacings D1 and D2 may range from 450μm to 550μm, such as 450μm, 500μm, or 550μm. Of course, in some embodiments, the spacings D1 and D2 may also adopt other values ​​as required, and the embodiments of the present disclosure do not limit the specific values ​​of the spacings D1 and D2.

[0028] The larger the spacing D1 and D2, the smaller the coupling capacitance formed by the first reference ground sub-line G1 and the second reference ground sub-line and the two lines L1 and L2 respectively. When the spacing D1 and D2 between the first reference ground sub-line G1 and the second reference ground sub-line and the two lines L1 and L2 respectively are greater than 16W, in some cases, the coupling capacitance formed by the first reference ground sub-line G1 and the second reference ground sub-line and the two lines L1 and L2 respectively can be ignored.

[0029] For example, Figure 2 As shown, the first parameter also includes the thickness H2 of the first insulating layer 11. For example, the value range of the thickness H2 is 300 μm-500 μm, such as 300 μm, 500 μm, such as 350 μm-450 μm, such as 350 μm, 400 μm or 450 μm, etc. Of course, in some embodiments, the thickness H2 can also adopt other values ​​according to requirements, and the embodiments of the present disclosure do not limit the specific value of the thickness H2.

[0030] For example, Figure 2 As shown, the first parameter also includes the thickness H3 of the first reference formation 12. For example, the value range of the thickness H3 is 10 μm-20 μm, such as 10 μm, 12 μm, 15 μm or 18 μm, 20 μm, etc. Of course, in some embodiments, the thickness H3 may also adopt other values ​​according to requirements, and the embodiments of the present disclosure do not limit the specific value of the thickness H3.

[0031] For example, in some embodiments, the material X to be measured is filled between the two lines L1 and L2, for example, also filled between the line L1 and the first reference ground sub-line G1 and between the line L2 and the second reference ground sub-line G2, and the material X to be measured is an organic insulating material. For example, the organic insulating material can be polypropylene (PP), aromatic benzocyclobutane (ABF), etc. The embodiments of the present disclosure do not limit the specific form of the material X to be measured.

[0032] For example, the material of the first insulating layer 11 is also an organic insulating material, which may be polypropylene (PP), aromatic benzocyclobutane (ABF), etc., and the material of the first insulating layer 11 may be the same as or different from the material X to be measured. The embodiments of the present disclosure do not limit the specific form of the first insulating layer 11.

[0033] In the traditional measurement method, the characteristics of the material X to be detected between the two lines L1 and L2 are usually replaced by the characteristics of the first insulating layer 11. However, under different environmental conditions, due to the influence of the packaging process, the material and properties of the material X to be detected are not completely the same as those of the first insulating layer 11. Using the characteristics of the first insulating layer 11 to replace the characteristics of the material X to be detected will result in unknown deviations in the obtained signal quality results, which is risky. In the embodiments of the present disclosure, the material and properties of the first insulating layer 11 are used as a reference to accurately obtain the characteristics of the material X to be detected, such as the dielectric constant and the loss factor, so as to more accurately evaluate the signal quality and reduce signal loss and distortion.

[0034] For example, the two lines L1 and L2 , the first reference ground line and the first reference ground layer 12 may be made of metal materials such as copper, aluminum, titanium or alloy materials.

[0035] The embodiments of the present disclosure do not specifically limit the materials of each layer in the first structure.

[0036] Step S102: Determine a second structure and a second parameter of a single routing line.

[0037] For example, the second structure includes a single trace disposed on the second insulating layer, the second insulating layer is made of the same material as the first insulating layer 11 , and the second parameter includes a line width W2 of the single trace.

[0038] For example, in some embodiments, the single trace is a microstrip single-ended trace in a chip packaging structure; in other embodiments, the single trace may also be a trace with a similar structure in other electronic devices.

[0039] For example, the environment and structure of the microstrip single-ended line and the microstrip differential line in the chip packaging structure are basically the same, and the difference is that the microstrip single-ended line has only one line, and the microstrip differential line has two lines. Therefore, the microstrip single-ended line can be used as a control group to provide a basis for measuring the characteristics of the material X to be tested between the microstrip differential lines.

[0040] For example, Figure 3 A schematic diagram of the first structure of the single routing is shown, such as Figure 3 As shown, the second structure includes a single trace L3 disposed on the second insulating layer 21 , and the second insulating layer 21 is made of the same material as the first insulating layer 11 .

[0041] For example, Figure 3 As shown, the second structure also includes a second reference ground layer 22 and second reference ground wires G3 and G4, a second insulating layer 21 is arranged on the second reference ground layer 22, the second reference ground wires G3 and G4 and the single routing line L3 are arranged on the side of the second insulating layer 21 away from the second reference ground layer 22, the second reference ground wire includes a third reference ground sub-wire G3 and a fourth reference ground sub-wire G4, and the third reference ground sub-wire G3 and the fourth reference ground sub-wire G4 are respectively arranged on both sides of the single routing line L3.

[0042] For example, the second parameter includes the line width W2 of the single line L3. For example, the line width W2 is substantially the same as the line width W1, and its value is W, and the value range of W is 20μm-40μm, such as 25μm-35μm, such as 25μm, 30μm or 35μm.

[0043] For example, the second parameter also includes a thickness H4 of the single line L3, for example, the thickness H4 has a value range of 10 μm-20 μm, such as 12 μm, 15 μm or 18 μm, etc. For example, the thickness H4 is substantially the same as the thickness H1.

[0044] For example, the second parameter also includes that the spacings D3 and D4 between the third reference ground sub-line G3 and the fourth reference ground sub-line G4 and the single routing line L3 are respectively greater than 16W, that is, greater than 16 times the line width W2. For example, in some examples, the spacings D3 and D4 may range from 450μm to 550μm, such as 500μm, etc. The larger the spacings D3 and D4, the smaller the coupling capacitance formed between the third reference ground sub-line G3 and the fourth reference ground sub-line G4 and the single routing line L3. When the spacings D3 and D4 between the third reference ground sub-line G3 and the fourth reference ground sub-line G4 and the single routing line L3 are respectively greater than 16W, in some cases, the coupling capacitance formed between the third reference ground sub-line G3 and the fourth reference ground sub-line G4 and the single routing line L3 may be negligible.

[0045] For example, the second parameter also includes the thickness H5 of the second insulating layer 21 , for example, the thickness H5 has a value range of 300 μm-500 μm, for example, 350 μm-450 μm, for example, 350 μm, 400 μm or 450 μm, etc. For example, the thickness H5 is substantially the same as the thickness H2.

[0046] For example, the second parameter also includes a thickness H6 of the second reference layer 22. For example, the thickness H6 has a value range of 10 μm-20 μm, such as 12 μm, 15 μm or 18 μm, etc. For example, the thickness H6 is substantially the same as the thickness H3.

[0047] For example, the material of the second insulating layer 21 is also an organic insulating material, and the organic insulating material may be polypropylene (PP), aromatic benzocyclobutane (ABF), etc., and the material of the second insulating layer 21 is the same as the material of the first insulating layer 11. Since the environment in which the second insulating layer 21 is located in the second structure is substantially the same as the environment in which the first insulating layer 11 is located in the first structure, the properties of the second insulating layer 21 (such as dielectric constant and dissipation factor) are substantially the same as the properties of the first insulating layer 11 (such as dielectric constant and dissipation factor).

[0048] For example, the single line L3 is made of the same material as the two lines L1 and L2 , the second reference ground line is made of the same material as the first reference ground line, and the second reference ground layer 22 is made of the same material as the first reference ground layer 21 .

[0049] Step S103: obtaining the dielectric constant and loss factor of the material of the second insulating layer when signals of different frequencies are applied to a single wiring.

[0050] For example, when signals of different frequencies are applied to the single line L3 , the first coupling capacitance between the single line L3 and the reference ground and the loss of the single line L3 at different lengths are measured respectively to obtain a plurality of first coupling capacitance data and a plurality of loss data.

[0051] For example, in some embodiments, Figure 4 As shown, the first coupling capacitor includes a coupling capacitor C1 between the single line L3 and the second reference ground layer 22. Since the spacing between the single line L3 and the third reference ground sub-line G3 / the fourth reference ground sub-line G4 is relatively large, the coupling capacitance between the single line L3 and the third reference ground sub-line G3 / the fourth reference ground sub-line G4 is very small and can be generally ignored.

[0052] For example, in other embodiments, under the condition of high accuracy requirement, the first coupling capacitor may include a coupling capacitor C2 between the single line L3 and the third reference ground sub-line G3, a coupling capacitor C3 between the single line L3 and the fourth reference ground sub-line G4, and a coupling capacitor C1 between the single line L3 and the second reference ground layer 22. This can make the final data processing result and the subsequent calculation result more accurate.

[0053] For example, the loss of the single line L3 at different lengths includes: the loss of the single line L3 at different lengths between 500 μm and 2000 μm. For example, in some examples, the loss of the single line L3 at lengths of 500 μm, 1000 μm, 1500 μm and 2000 μm can be measured respectively.

[0054] For example, a plurality of first coupling capacitance data and a plurality of loss data are processed to obtain the dielectric constant and loss factor of the material of the second insulating layer 21 when signals of different frequencies are applied to the single line L3.

[0055] For example, multiple first coupling capacitance data and multiple loss data can be simulated and fitted respectively to obtain the relationship between the dielectric constant of the material of the second insulating layer 21 and different frequencies when signals of different frequencies are applied to a single line L3, and the relationship between the loss factor and different frequencies. For example, fitting curves can be obtained respectively, so that the values ​​of the dielectric constant and the loss factor at different frequencies can be obtained from the curves.

[0056] Step S104: obtaining the dielectric constant of the material to be measured when signals of different frequencies are applied to two traces.

[0057] For example, the line width W1 of the two lines L1 and L2 is kept the same as the line width W2 of the single line L3, which is W, and the spacing W3 between the two lines L1 and L2 is changed. The second coupling capacitance between the two lines L1 and L2 and the third coupling capacitance between the two lines L1 and L2 and the reference ground are respectively measured when the spacing W3 is different and signals of different frequencies are applied to the two lines L1 and L2, and multiple second coupling capacitance data and multiple third coupling capacitance data are obtained.

[0058] For example, in some embodiments, Figure 5A-Figure 5C As shown, the spacing W3 can be measured as W (as Figure 5A )、2W(such as Figure 5B ) and 3W (such as Figure 5C ) and when the two lines L1 and L2 are applied with signals of different frequencies, the second coupling capacitor between the two lines L1 and L2 and the third coupling capacitor between the two lines L1 and L2 and the reference ground respectively; or, in other embodiments, in order to improve the accuracy of data processing (for example, to improve the accuracy of subsequent data fitting), as Figure 5A-5F As shown, the spacing W3 can be measured as W (as Figure 5A )、2W(such as Figure 5B )、3W(such as Figure 5C )、4W(such as Figure 5D )、5W(such as Figure 5E ) and 6W (such as Fig. 5F ) and when signals of different frequencies are applied to the two lines L1 and L2, the second coupling capacitor between the two lines L1 and L2 and the third coupling capacitor between the two lines L1 and L2 and the reference ground respectively.

[0059] For example, in some embodiments, the two traces L1 and L2 include a first trace L1 and a second trace L2. Figure 6As shown, the second coupling capacitor is C4 , and the third coupling capacitor may include a coupling capacitor C5 between the first wiring L1 and the first reference ground layer 12 , and a coupling capacitor C6 between the second wiring L2 and the first reference ground layer 12 .

[0060] For example, in some other embodiments, in order to improve the accuracy of data processing (for example, to improve the accuracy of subsequent data fitting), the third coupling capacitor includes a coupling capacitor C7 between the first routing line L1 and the first reference ground sub-line G1, a coupling capacitor C10 between the first routing line L1 and the second reference ground sub-line G2, a coupling capacitor C5 between the first routing line L1 and the first reference ground layer, a coupling capacitor C9 between the second routing line L2 and the first reference ground sub-line G1, a coupling capacitor C8 between the second routing line L2 and the second reference ground sub-line G2, and a coupling capacitor C6 between the second routing line L2 and the first reference ground layer 12.

[0061] For example, a plurality of second coupling capacitance data and a plurality of third coupling capacitance data are processed to obtain the dielectric constant of the material X to be measured when signals of different frequencies are applied to the two lines L1 and L2.

[0062] For example, in some embodiments, the above steps specifically include: simulating and fitting the plurality of second coupling capacitance data and the plurality of third coupling capacitance data, finding a rule, obtaining a relationship between the dielectric constant of the material X to be measured and the different frequencies applied to the two lines L1 and L2, such as a simulation curve, and then obtaining the dielectric constant of the material X to be measured when the two lines L1 and L2 are applied with signals of different frequencies, for example, reading the dielectric constant of the material X to be measured when the two lines L1 and L2 are applied with signals of different frequencies from the above simulation curve.

[0063] Step S105: combining the dielectric constant and loss factor of the second insulating layer 21 when the single line L3 is applied with signals of different frequencies, obtain the loss factor of the material X to be measured when the two lines L1 and L2 are applied with signals of different frequencies.

[0064] For example, in some embodiments, a manual calculation method using formula derivation or a computer processing method may be used, such as using the Djordjevic-Sarkar model, to obtain the relationship between the dielectric constant and the loss factor of the material X to be measured when signals of different frequencies are applied to the two lines L1 and L2. For example, in the Djordjevic-Sarkar model, the dielectric constant and loss factor data of the material of the second insulating layer 21 when signals of different frequencies are applied to the single line L3 are introduced, such as obtaining ε in the model. ∞ and K (refer to Formula 2), the loss factor of the material X to be measured when signals of different frequencies are applied to the two lines L1 and L2 is obtained.

[0065] It should be noted that, in the embodiment of the present disclosure, the execution order of at least some steps in step S101 to step S105 can be swapped and is not limited to being executed in sequence.

[0066] For example, in some embodiments, the execution order of step S101 and step S102 can be swapped, or they can be executed simultaneously. For example, step S104 can be executed simultaneously with step S103.

[0067] For example, the solution of the Djordjevic-Sarkar model is as follows:

[0068] The frequency to be measured is ω1, and the dielectric constant of the material X to be measured at this frequency is ε(ω1); the loss factor is tanδ1; using the Djordjevic-Sarkar formula model, the following formula 1 can be obtained:

[0069]

[0070] Among them, ε ∞ is the dielectric constant at infinite frequency, which needs to be obtained through experimental measurement; △ε is the relative dielectric constant, which is a variable that changes with frequency; ε0 is the dielectric constant at low frequency, which is a known quantity; ω B is a high frequency much larger than the frequency to be measured, ω A is a low frequency much smaller than the frequency to be measured, σ DC is the DC conductivity, the default value can be set to 0; j is the imaginary unit in the dielectric constant (complex number), j 2 =-1.

[0071] From this, we can get the formula 2 of relative dielectric constant:

[0072]

[0073] We can also get the conductivity formula three:

[0074]

[0075] And because:

[0076]

[0077]

[0078]

[0079] K is a variable related to the test frequency and has Formula 4 and Formula 5:

[0080]

[0081]

[0082] The relative dielectric constant of the material to be tested can be obtained from formula 3, and the relationship between the relative dielectric constant and the loss factor of the material to be tested can be obtained using formulas 4 and 5, that is:

[0083]

[0084] Thus, the loss factor of the material X to be measured can be obtained when signals of different frequencies are applied to the two lines L1 and L2.

[0085] By using the above method provided in the embodiment of the present disclosure, the properties of the material between two traces can be accurately obtained. For example, when used in a chip packaging structure, the dielectric constant and loss factor of the dielectric material between microstrip differential lines can be accurately obtained to more accurately evaluate signal quality and reduce signal loss and distortion.

[0086] There are a few points to note:

[0087] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0088] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is enlarged or reduced, that is, these drawings are not drawn according to the actual scale.

[0089] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0090] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A method for measuring material properties between two traces, comprising: Determine a first structure and a first parameter of the two routing lines, wherein the first structure includes the two routing lines being arranged on a first insulating layer, and a material to be measured is provided between the two routing lines, and the first parameter includes a line width W1 of the two routing lines; Determine a second structure and a second parameter of a single routing line, wherein the second structure includes the single routing line being disposed on a second insulating layer, the second insulating layer being made of the same material as the first insulating layer, and the second parameter includes a line width W2 of the single routing line, and the line width W2 is equal to the line width W1; Obtaining the dielectric constant and loss factor of the material of the second insulating layer when signals of different frequencies are applied to the single trace; Obtaining the dielectric constant of the material to be measured when signals of different frequencies are applied to the two traces; and The loss factor of the material to be measured when signals of different frequencies are applied to the two traces is obtained by combining the dielectric constant and the loss factor of the material of the second insulating layer when the single trace is applied with signals of different frequencies.

2. The method according to claim 1, wherein: Obtaining the dielectric constant and loss factor of the material of the second insulating layer when signals of different frequencies are applied to the single trace, comprising: Respectively measuring the first coupling capacitance between the single line and the reference ground and the loss of the single line at different lengths when signals of different frequencies are applied to the single line, to obtain a plurality of first coupling capacitance data and a plurality of loss data; and The plurality of first coupling capacitance data and the plurality of loss data are processed to obtain the dielectric constant and the loss factor of the material of the second insulating layer when signals of different frequencies are applied to the single trace.

3. The method according to claim 1, wherein: Obtaining the dielectric constant of the material to be measured when signals of different frequencies are applied to the two traces, comprising: Keeping the line width W1 of the two lines the same as the line width W2 of the single line, which is W, and changing the spacing W3 between the two lines, and respectively measuring the second coupling capacitance between the two lines and the third coupling capacitance between the two lines and the reference ground when the spacing W3 is different and signals of different frequencies are applied to the two lines, to obtain a plurality of second coupling capacitance data and a plurality of third coupling capacitance data; The plurality of second coupling capacitance data and the plurality of third coupling capacitance data are processed to obtain the dielectric constant of the material to be measured when signals of different frequencies are applied to the two traces.

4. The method according to claim 1, wherein: Processing the plurality of second coupling capacitance data and the plurality of third coupling capacitance data to obtain the dielectric constant of the material to be measured when signals of different frequencies are applied to the two traces includes: Perform simulation fitting on the plurality of second coupling capacitance data and the plurality of third coupling capacitance data, Obtaining the relationship between the dielectric constant of the material to be measured and the different frequencies applied to the two traces, and The dielectric constant of the material to be measured is obtained when signals of different frequencies are applied to the two traces.

5. The method according to claim 1, wherein: in, The Djordjevic-Sarkar model is used to obtain the loss factor of the material to be measured when signals of different frequencies are applied to the two traces.

6. The method according to claim 5, wherein: Using the Djordjevic-Sarkar model, the loss factor of the material to be measured when the two traces are applied with signals of different frequencies is obtained, including: Obtaining the relationship between the dielectric constant and the loss factor of the material to be measured when signals of different frequencies are applied to the two traces, data on the dielectric constant and loss factor of the material of the second insulating layer when signals of different frequencies are applied to the single trace, and The loss factor of the material to be measured when signals of different frequencies are applied to the two traces is obtained.

7. The method according to claim 1, wherein: The two traces are microstrip differential lines, and the single trace is a microstrip single-ended line.

8. The method according to any one of claims 1 to 7, wherein: The first structure also includes a first reference ground layer and a first reference ground line. Wherein, the first insulating layer is arranged on the first reference ground layer, The first reference ground line and the two wirings are arranged on a side of the first insulating layer away from the first reference ground layer. The first reference ground line includes a first reference ground sub-line and a second reference ground sub-line, and the first reference ground sub-line and the second reference ground sub-line are respectively arranged on both sides of the two routing lines.

9. The method according to claim 8, wherein: The first parameter also includes: The distances between the first reference ground sub-line and the second reference ground sub-line and the two routing lines are respectively greater than 16W.

10. The method according to claim 8, wherein: The two traces include a first trace and a second trace, and the third coupling capacitor includes: The coupling capacitance between the first trace and the first reference ground layer, and A coupling capacitor between the second wiring and the first reference ground layer.

11. The method according to claim 8, wherein: The two traces include a first trace and a second trace, and the third coupling capacitor includes: The coupling capacitance between the first wiring and the first reference ground sub-line, The coupling capacitance between the first wiring and the second reference ground sub-line, The coupling capacitance between the first wiring and the first reference ground layer, The coupling capacitance between the second wiring and the first reference ground sub-line, The coupling capacitance between the second wiring and the second reference ground sub-line, and A coupling capacitor between the second wiring and the first reference ground layer.

12. The method according to any one of claims 1 to 7, wherein: The second structure also includes a second reference ground layer and a second reference ground line. Wherein, the second insulating layer is arranged on the second reference ground layer, The second reference ground line and the single wiring are arranged on a side of the second insulating layer away from the second reference ground layer. The second reference ground line includes a third reference ground sub-line and a fourth reference ground sub-line, and the third reference ground sub-line and the fourth reference ground sub-line are respectively arranged on both sides of the single routing line.

13. The method according to claim 12, wherein: The second parameter also includes: The distances between the third reference ground sub-line and the fourth reference ground sub-line and the single routing line are respectively greater than 16W.

14. The method according to claim 12, wherein: The first coupling capacitor comprises: A coupling capacitor between the single trace and the second reference ground layer.

15. The method according to claim 12, wherein: The first coupling capacitor comprises: The coupling capacitance between the single wiring and the third reference ground sub-line, The coupling capacitance between the single line and the fourth reference ground sub-line, and A coupling capacitor between the single trace and the second reference ground layer.

16. The method according to any one of claims 1 to 7, wherein: The spacing W3 has different values, including: The intervals W3 are W, 2W and 3W respectively.

17. The method according to any one of claims 1 to 7, wherein: The spacing W3 has different values, including: The intervals W3 are W, 2W, 3W, 4W, 5W and 6W respectively.

18. The method according to any one of claims 1 to 7, wherein: The value of W is 20 micrometers to 40 micrometers.

19. The method according to any one of claims 1 to 7, wherein: The losses of a single trace at different lengths include: The loss of the single trace at different lengths between 500 μm and 2000 μm.

20. The method according to any one of claims 1 to 7, wherein: The material to be measured is an organic insulating material.

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