A method for predicting thermal-induced warpage distribution in a package structure and related apparatus

Abstract

The application discloses a method for predicting thermal warpage distribution in a packaging structure and a related device, which can be applied to the field of semiconductor manufacturing. In the method, firstly, material characteristic parameters and structure parameters of the packaging structure are acquired; then, in a plurality of local coordinate systems established based on the positional relationship between a reference point in the packaging structure and each die, warpage values caused by each asymmetric basic unit in the packaging structure are calculated based on the material characteristic parameters and the structure parameters; subsequently, the warpage values caused by each asymmetric basic unit are superimposed to obtain first warpage distribution data of each die in the packaging structure; finally, based on the first warpage distribution data and a preset warpage hotspot threshold, a warpage hotspot coordinate and a warpage value are determined. Thus, the thermal warpage distribution in the packaging structure is predicted by superimposing the warpage values caused by each basic unit, and the warpage of the multi-die packaging structure can be quickly predicted without increasing the calculation complexity.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a method and related apparatus for predicting thermally induced warpage distribution in a package structure. Background Technology

[0002] As semiconductor manufacturing process technology nodes continue to decrease, achieving heterogeneous integration of chips through advanced packaging technologies such as 2.5D or 3D has become a key technology for overcoming size bottlenecks. Advanced packaging processes involve complex heating and cooling processes, which can lead to thermal warpage, severely impacting the yield of the integrated chips obtained after packaging.

[0003] Currently, to address thermally induced warpage in advanced packaging processes, finite element analysis (FEM) tools are typically used to assess the impact of factors such as packaging structure, material parameters, and process parameters on warpage. This allows for adjustments to the integrated chip's design to reduce warpage. However, FEM calculations require significant computational resources, and the time required to analyze thermally induced warpage is difficult to estimate. Especially for large-scale integrated chips, using FEM tools to analyze and predict potential thermally induced warpage in the packaging structure is extremely time-consuming, severely impacting the efficiency of chip structure design.

[0004] Therefore, how to quickly predict the thermally induced warpage distribution in the packaging structure has become a problem that needs to be solved. Summary of the Invention

[0005] To address the aforementioned issues, this application provides a method and related apparatus for predicting thermally induced warpage distribution in a packaging structure, which can quickly predict the thermally induced warpage distribution in the packaging structure.

[0006] The embodiments of this application disclose the following technical solutions:

[0007] In a first aspect, embodiments of this application provide a method for predicting the thermally induced warpage distribution in a packaging structure, the method comprising:

[0008] Obtain the material characteristic parameters and structural parameters of the packaging structure;

[0009] In multiple local coordinate systems established based on the relationship between the reference point and the position of each core particle in the packaging structure, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated based on the material characteristic parameters and the structural parameters.

[0010] By superimposing the warpage values ​​caused by each asymmetric basic unit, the first warpage distribution data of each chip in the packaging structure is obtained;

[0011] Based on the first warping distribution data and the preset warping hotspot threshold, the coordinates of the warping hotspots and the warping value are determined.

[0012] Optionally, before obtaining the first warpage distribution data of each chip in the packaging structure by superimposing the warpage values ​​caused by the various asymmetric basic units, the method further includes:

[0013] Based on the material characteristic parameters and the structural parameters, the correction coefficients are determined through a pre-established correction coefficient regression model;

[0014] The warpage values ​​caused by the superposition of the various asymmetric basic units are used to obtain the first warpage distribution data of each chip in the packaging structure, including:

[0015] The first warpage distribution data of each chip in the packaging structure is obtained by superimposing the warpage value caused by each asymmetric basic unit and the correction coefficient.

[0016] Optionally, the regression model is established using the following method:

[0017] A warpage database is established based on the correspondence between the material characteristic parameters and structural parameters of the encapsulation structure and the actual warpage values.

[0018] Based on the material characteristic parameters and the structural parameters, calculate the analytical solution for the warping of the asymmetric basic unit in the packaging structure;

[0019] Based on the analytical solution of warping and the actual warping values ​​in the warping database, a correction coefficient database is established;

[0020] Using the aforementioned modified coefficient database as a sample, a modified coefficient regression model is established.

[0021] Optionally, the step of calculating the warpage value caused by each asymmetric basic unit in the packaging structure in multiple local coordinate systems established based on the relationship between the reference point in the packaging structure and the position of each chip includes:

[0022] In multiple local coordinate systems established based on the relationship between the reference point and the position of each chip in the package structure, the coordinates of the reference point and the coordinates of the two intersection points of the extended line connecting the reference point and the chip and the edge of the package structure are calculated respectively.

[0023] Based on the coordinates of the reference point corresponding to each chip and the coordinates of the two intersection points, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated.

[0024] Optionally, determining the warp hotspot coordinates and warp value based on the first warp distribution data and a preset warp hotspot threshold includes:

[0025] Based on the first warping distribution data, the stable plane with the minimum direction cosine in the first global coordinate system is determined from multiple tangent planes of the packaging structure.

[0026] Based on the stable plane, establish a second global coordinate system;

[0027] Based on the first warping distribution data and the second global coordinate system, the second warping distribution data is calculated;

[0028] Based on the second warping distribution data and the preset warping hotspot threshold, the coordinates of the warping hotspots and the warping value are determined.

[0029] Optionally, the step of calculating the second warping distribution data based on the first warping distribution data and the second global coordinate system includes:

[0030] The first warped data is calculated using coordinate axis translation and rotation formulas to obtain the second warped distribution data in the second global coordinate system.

[0031] Optionally, the asymmetric basic unit includes a core, a filler layer, and a base layer.

[0032] Secondly, embodiments of this application provide a device for predicting the thermally induced warpage distribution in a packaging structure, the device comprising: an acquisition module, a calculation module, a superposition module, and a determination module;

[0033] The acquisition module is used to acquire the material characteristic parameters and structural parameters of the packaging structure;

[0034] The calculation module is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters in multiple local coordinate systems established based on the relationship between the reference point in the packaging structure and the position of each core particle.

[0035] The superposition module is used to superimpose the warpage values ​​caused by each asymmetric basic unit to obtain the first warpage distribution data of each core in the packaging structure.

[0036] The determining module is used to determine the coordinates of the warped hotspots and the warped value based on the first warped distribution data and a preset warped hotspot threshold.

[0037] Thirdly, embodiments of this application provide a device for predicting thermally induced warpage distribution in a packaging structure, the device comprising: a memory and a processor;

[0038] The memory is used to store program code and transmit the program code to the processor;

[0039] The processor is configured to execute, according to the program code, the steps of the method for predicting thermally induced warpage distribution in the packaging structure described in any embodiment of the first aspect.

[0040] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program that, when run on a device for predicting thermally induced warpage distribution in a package structure, executes the steps of the method for predicting thermally induced warpage distribution in a package structure as described in any embodiment of the first aspect.

[0041] Compared with the prior art, this application has the following beneficial effects:

[0042] This application provides a method for predicting thermally induced warpage distribution in a packaging structure. The method first obtains the material characteristic parameters and structural parameters of the packaging structure. Then, in multiple local coordinate systems established based on the relationship between reference points and the positions of each core element in the packaging structure, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated based on the material characteristic parameters and structural parameters. Next, the warpage values ​​caused by each asymmetric basic unit are superimposed to obtain the first warpage distribution data for each core element in the packaging structure. Finally, based on the first warpage distribution data and a preset warpage hotspot threshold, the coordinates and warpage values ​​of the warpage hotspots are determined. Therefore, by first calculating the warpage values ​​caused by each asymmetric basic unit and then superimposing the warpage values ​​caused by each asymmetric basic unit, the first warpage distribution data of the thermally induced warpage distribution in the packaging structure can be predicted. This allows for warpage prediction of multi-core packaging structures without increasing computational complexity, achieving rapid prediction of the thermally induced warpage distribution in the packaging structure. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0044] Figure 1 A flowchart illustrating a method for predicting thermally induced warpage distribution in a packaging structure, as provided in an embodiment of this application.

[0045] Figure 2 A schematic diagram of a local coordinate system provided in an embodiment of this application;

[0046] Figure 3 A schematic diagram of an asymmetric basic unit structure provided in an embodiment of this application;

[0047] Figure 4 A schematic diagram of a device for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of this application;

[0048] Figure 5 This is a structural diagram of a device for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of this application. Detailed Implementation

[0049] The method and related apparatus for predicting thermally induced warpage distribution in a packaging structure provided in this application can be used in the semiconductor manufacturing field. The above is only an example and does not limit the application field of the method and related apparatus for predicting thermally induced warpage distribution in a packaging structure provided in this application.

[0050] The terms "first," "second," "third," and "fourth," etc., used in this application specification, claims, and drawings are used to distinguish different objects, not to limit a specific order.

[0051] In the embodiments of this application, the terms "as an example" or "for example" are used to indicate that they are examples, illustrations, or explanations. Any embodiment or design that is described as "as an example" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design options. Specifically, the use of terms such as "as an example" or "for example" is intended to present the relevant concepts in a specific manner.

[0052] The terminology used in the implementation section of this application is for the purpose of explaining specific embodiments of this application only, and is not intended to limit this application.

[0053] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0054] See Figure 1 The figure is a flowchart of a method for predicting thermally induced warpage distribution in a packaging structure according to an embodiment of this application. The method includes:

[0055] S101: Obtain the material characteristic parameters and structural parameters of the packaging structure.

[0056] As an example, a model of the packaging structure can be constructed in advance based on the geometric information of the packaging architecture. The packaging structure can be equivalent to a three-layer composite structure of a substrate layer, a filler layer, and a core, with materials in the same layer considered isotropic or transversely anisotropic. Material characteristic parameters can include parameters such as elastic modulus, Poisson's ratio, and coefficient of thermal expansion. In the packaging structure, the material characteristic parameters of isotropic materials can be expressed as follows: Extraction is then performed. This simplifies the encapsulation structure to a three-layer composite structure: a base layer, a filler layer, and a core, reducing the complexity of geometric modeling and making computation more efficient.

[0057] Mode In this context, X represents parameters such as elastic modulus, Poisson's ratio, or coefficient of thermal expansion; c a denoted as 'a', where 'a' represents the volume fraction of the a-th material; and 'n' represents the number of material types contained in a structural layer. In the embodiments of this application, a structural layer can be considered as being composed of binary materials. For example, a filler layer can be considered as being composed of two materials: solder joints and polyimide (PI), i.e., n = 2.

[0058] Optionally, the structural parameters of the encapsulation structure may include the height and length of each structural layer, as well as the center distance between each structural layer.

[0059] S102: In multiple local coordinate systems established based on the relationship between the reference point and the position of each core particle in the packaging structure, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated based on material characteristic parameters and structural parameters.

[0060] Each asymmetric basic unit consists of a core, a filler layer, and a base layer.

[0061] As an example, multiple local coordinate systems can be established based on the relationship between the reference point and the position of each chip in the package structure. For each of the multiple local coordinate systems, the coordinates of the reference point and the coordinates of the two intersection points of the extension line connecting the reference point and the chip and the edge of the package structure can be calculated respectively. Then, based on the coordinates of the reference point corresponding to each chip and the coordinates of the two intersection points, the warpage value caused by each asymmetric basic unit in the package structure can be calculated respectively.

[0062] Specifically, see Figure 2 The figure is a schematic diagram of a local coordinate system provided in an embodiment of this application, wherein E is any point in the encapsulation structure, and the coordinate system (x,y,z) is the first global coordinate system of the encapsulation structure.

[0063] Establish a local coordinate system (ξ) between point E and the i-th core particle. i Taking z as an example, the connection point E is connected to the centroid O of the i-th core particle. i And draw an extension line, the extension line intersects the edge of the package structure at two points C. i and D i If |O i C i |≥|O i D i |, then The direction is ξ in the local coordinate system i Establish a local coordinate system (ξ) in the positive direction.i ,z); if |O i C i |<|O i D i |, then The direction is ξ in the local coordinate system i Establish a local coordinate system (ξ) in the positive direction. i ,z).

[0064] by The direction is ξ in the local coordinate system i Taking the positive direction as an example, through the formula ξ iC =-|O i C i Calculate the intersection point C i In the local coordinate system ξ i The coordinates in the equation ξ; iD =|O i D i Calculate the intersection point D i In the local coordinate system ξ i The coordinates in the equation ξ; iE =|O i E| or ξ iE =-|O i E| Calculate the ξ of point E in the local coordinate system. i The coordinates in the diagram.

[0065] Similarly, establish a local coordinate system (ξ) between point E and the j-th core particle. j (z) can connect point E to the centroid O of the j-th core particle. j And draw an extension line, the extension line intersects the edge of the package structure at two points C. j and D j If |O j C j |≥|O j D j |, then The direction is ξ in the local coordinate system j Establish a local coordinate system (ξ) in the positive direction. j ,z); if |O j C j |<|O j D j |, then The direction is ξ in the local coordinate system j Establish a local coordinate system (ξ) in the positive direction. j ,z).

[0066] Then, based on the coordinates of the reference points corresponding to each core and the coordinates of the two intersection points, the warpage value caused by each asymmetric basic unit in the packaging structure can be calculated using the warpage calculation formula.

[0067] As an example, asymmetric basic unit structures such as Figure 3 As shown, the formula for calculating the warpage value of the asymmetric basic unit can be:

[0068]

[0069]

[0070] Equation (1) provides an analytical expression based on the hyperbolic cosine function for calculating the asymmetric basic unit at a specific point ξ. i warp value w i (ξ i Equation (2) provides a piecewise linear interpolation formula to handle the warping changes in different position intervals in the asymmetric basic unit, and improve the continuity and smoothness of the warping curve of the asymmetric basic unit; B1, B2, B3, B4 and B5 are undetermined coefficients, which can be solved based on the force balance equations and boundary conditions; r1 and r2 are characteristic roots of the interface continuity equation, and the values ​​of r1 and r2 can be obtained based on the material characteristic parameters and the interface continuity equation.

[0071] Therefore, for each chip in a heterogeneous integrated chip array, the warping analytical expression of the asymmetric basic unit structure can be obtained using beam theory. In the solution process, there is no need to iteratively solve a large set of equations, which can obtain the warping value caused by each asymmetric basic unit more quickly, and avoids the complex three-dimensional finite element modeling process, greatly reducing the demand for computing resources.

[0072] As an example, we can use symmetric boundary conditions, assuming B4 = B5 = 0, then w i (0)=w' i (0) = 0, and the values ​​of B1, B2 and B3 can be obtained by using equation (3):

[0073]

[0074] Among them, h b Let A be the thickness of the b-th layer in the asymmetric basic unit, j = 1, 2, 3; D be the sum of the rotational inertia of the three structural layers; A 11 A 12 A 21 A 22 T1 0 and T2 0 It is a process quantity related to material characteristic parameters, asymmetric basic unit structure, and process parameters.

[0075] Specifically, based on the material characteristic parameters and structural parameters of the encapsulation structure, a system of equations including free boundary conditions, continuity equations, and force / moment balance equations can be constructed to obtain a mechanical model that describes the deformation and stress distribution of the asymmetric basic unit under temperature changes. Solving based on the constructed mechanical model yields A. 11 A 12 A 21 A 22 T1 0 and T2 0 The values ​​of B1, B2, and B3 are then obtained by solving for the values ​​of B1, B2, and B3.

[0076] In the process of solving the problem based on the constructed mechanical model, the coefficient matrix is ​​an indispensable part. Elements in the coefficient matrix, such as A... 11 A 12 A 21 And A 22 This is related to the material characteristic parameters of each structural layer, such as the elastic modulus, Poisson's ratio, and coefficient of thermal expansion, as well as their geometric dimensions, relative positions, and thermal load; T1 0 and T2 0 These represent the position-independent components of the thermal mismatch-induced tensile force in structural layer 1 and structural layer 2, respectively, which are determined by the material characteristic parameters, thickness, and temperature changes before and after deformation of each structural layer.

[0077] Before solving for the values ​​of B4 and B5, a pre-built warp database can be used as a sample. A coefficient regression model can be established using machine learning algorithms such as random forest. The coefficient regression model can learn the warp behavior pattern from the existing data. Then, under new conditions, the values ​​of B4 and B5 can be accurately predicted by the coefficient regression model based on the material characteristic parameters and structural parameters.

[0078] For example, actual warpage values ​​can be obtained using experimental or finite element method (FEM) simulations, and a warpage database can be constructed based on the correspondence between the material characteristic parameters and structural parameters of the encapsulated structure and the actual warpage values. For each actual warpage value obtained from an experiment or simulation, the corresponding data in the warpage database may include, but is not limited to: material characteristic parameters such as the equivalent modulus, equivalent Poisson's ratio, and equivalent thermal expansion coefficient of each structural layer; structural parameters such as the thickness, length, and center distance between each structural layer; and data such as the temperature of the material in each structural layer.

[0079] S103: Superimpose the warpage values ​​caused by each asymmetric basic unit to obtain the first warpage distribution data of each chip in the packaging structure.

[0080] As an example, it can be expressed as follows: The warpage caused by each chip within the package structure at point E is superimposed to obtain the first warpage distribution data for each chip in the package structure. Here, m is the total number of chips within the package structure; (x, y) are the coordinates of point E in the first global coordinate system.

[0081] Therefore, by superimposing the warping values ​​caused by each asymmetric basic unit to obtain the first warping distribution data, the computational scale can be effectively controlled, thereby quickly obtaining the first warping distribution data. This avoids the problem that the computation time increases exponentially with the increase of the integrated chip scale when applying the traditional finite element method.

[0082] Optionally, the warping analytical solution w of each asymmetric basic unit in multiple experiments or simulations can be calculated using equation (1) based on the material characteristic parameters and structural parameters of the corresponding packaging structure in each experiment or simulation. i (ξ i Using a pre-established warp database, the actual warp values ​​w of each asymmetric basic unit in multiple experiments or simulations were obtained. 0i (ξ i Furthermore, by calculating the ratio of the actual warping value to the corresponding analytical solution for warping, the correction coefficient k can be obtained. i =w 0i (ξ i ) / w i (ξ i A correction coefficient database is established based on the calculated correction coefficients corresponding to different numbers of experiments or simulations. Using the correction coefficient database as a sample, a correction coefficient regression model can be established using machine learning algorithms such as random forest.

[0083] Then, in calculating the warpage value caused by each asymmetric basic unit, the correction coefficient can be determined based on the material characteristic parameters and structural parameters through a pre-established correction coefficient regression model, using the correction coefficient k. i With the analytical solution of warping w i (ξ i The product of the warpage values ​​caused by each asymmetric basic unit is used to correct the warpage analytical solution calculated by formula (1), thereby achieving high-precision and rapid prediction of the warpage values ​​caused by each asymmetric basic unit. Based on this, the first warpage distribution data of each core chip in the packaging structure can be superimposed with the product of the warpage values ​​caused by each asymmetric basic unit and the correction coefficient, and then calculated using formula (1). Calculated.

[0084] S104: Based on the first warp distribution data and the preset warp hotspot threshold, determine the warp hotspot coordinates and warp values.

[0085] Specifically, a warped hotspot threshold can be preset, and points in the first warped distribution data whose warped values ​​are greater than the warped hotspot threshold can be marked as hotspots, and the coordinates and warped values ​​of the hotspots can be output.

[0086] Optionally, to more easily set a suitable warp hotspot threshold and accurately identify hotspots, a stable plane in the package structure can be determined, and a new global coordinate system, namely the second global coordinate system, can be established based on the stable plane. The first warp distribution data can be converted into the second warp distribution data under the second global coordinate system. Then, points in the second warp distribution data with warp values ​​greater than the warp hotspot threshold are marked as hotspots, and the coordinates and warp values ​​of the hotspots are output. This helps engineers discover potential problems during the design phase of the package structure, thereby optimizing the layout design to avoid these problems, accelerating the product development cycle, and improving production yield.

[0087] Specifically, based on the first warping distribution data, p minimum points and stationary points of the warping on the bottom surface of the encapsulation structure can be obtained. From these p points, three points can be randomly selected to define a plane, which can yield a maximum of C. n 3 We take a plane and remove the combination of three points lying on the same straight line to obtain q tangent planes f(x,y). For any point (x,y) in the encapsulation structure, f(x,y) ≤ w(x,y).

[0088] Comparing the direction cosines of q tangent planes can be done using the formula: Min(cos 2 αs+cos 2 βs+cos 2 Given γs), 1≤s≤q, determine the stable plane with the minimum direction cosine in the first global coordinate system from among q tangent planes. Where α s Let β be the angle between the s-th tangent plane and the x-axis of the first global coordinate system; s γ is the angle between the s-th tangent plane and the y-axis of the first global coordinate system; s Let be the angle between the s-th tangent plane and the z-axis of the first global coordinate system.

[0089] Based on the stable plane, a new coordinate system is established, namely the second global coordinate system (x). * ,y * ,z * ). Transform the second global coordinate system (x) * ,y * ,z * The direction cosines of the first global coordinate system (x,y,z) in the x, y, and z directions are respectively denoted as: l1, m1, n1; l2, m2, n2; l3, m3, n3.

[0090] Based on the coordinate axis translation and rotation formulas, the second warped distribution data w in the second global coordinate system can be calculated using the first warped distribution data w(x,y) and the direction cosine matrices of the second global coordinate system and the first global coordinate system. * (x * ,y * ):

[0091]

[0092] The second warp distribution data can reflect the degree of warping of each point in the package structure relative to the stable plane. Therefore, based on the second warp distribution data and the preset warp hotspot threshold, the coordinates and warp values ​​of the warp hotspots relative to the stable plane can be determined more accurately.

[0093] The warpage hotspot threshold can be set to K. threshold If the second warped distribution data contains data that do not meet the threshold condition Max(w) * (x * ,y * ))≤K threshold If the points do not meet the threshold conditions, then the points that do not meet the threshold conditions will be marked as hotspots, and the warped hotspot coordinates and warping values ​​will be output.

[0094] In this embodiment, firstly, the material characteristic parameters and structural parameters of the packaging structure are obtained. Then, in multiple local coordinate systems established based on the relationship between the reference point in the packaging structure and the position of each core particle, the warpage value caused by each asymmetric basic unit in the packaging structure is calculated based on the material characteristic parameters and structural parameters. Next, the warpage values ​​caused by each asymmetric basic unit are superimposed to obtain the first warpage distribution data of each core particle in the packaging structure. Finally, based on the first warpage distribution data and a preset warpage hotspot threshold, the coordinates of the warpage hotspot and the warpage value are determined. Thus, by first calculating the warpage value caused by each asymmetric basic unit and then superimposing the warpage values ​​caused by each asymmetric basic unit, the first warpage distribution data of the thermally induced warpage distribution in the packaging structure can be predicted. This allows for warpage prediction of multi-core packaging structures without increasing computational complexity, achieving rapid prediction of the thermally induced warpage distribution in the packaging structure.

[0095] See Figure 4 The figure is a schematic diagram of a device for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of this application. The device includes: an acquisition module 401, a calculation module 402, a superposition module 403, and a determination module 404.

[0096] The acquisition module 401 is used to acquire the material characteristic parameters and structural parameters of the packaging structure;

[0097] The calculation module 402 is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on material characteristic parameters and structural parameters in multiple local coordinate systems established based on the relationship between the reference point in the packaging structure and the position of each core particle.

[0098] The superposition module 403 is used to superimpose the warpage values ​​caused by each asymmetric basic unit to obtain the first warpage distribution data of each core in the packaging structure.

[0099] The determination module 404 is used to determine the coordinates and warping values ​​of the warping hotspots based on the first warping distribution data and the preset warping hotspot threshold.

[0100] Therefore, by first calculating the warpage value caused by each asymmetric basic unit, and then superimposing the warpage values ​​caused by each non-basic unit, the first warpage distribution data of the thermally induced warpage distribution in the packaging structure can be predicted. This enables warpage prediction of multi-core packaging structures without increasing computational complexity, and achieves rapid prediction of the thermally induced warpage distribution in the packaging structure.

[0101] Optionally, the calculation module 402 is specifically used to: calculate the coordinates of the reference point and the coordinates of the two intersection points of the extension line connecting the reference point and the core particle with the edge of the package structure in multiple local coordinate systems established based on the positional relationship between the reference point and each core particle in the package structure; and calculate the warpage value caused by each asymmetric basic unit in the package structure based on the coordinates of the reference point corresponding to each core particle and the coordinates of the two intersection points.

[0102] Optionally, the determining module 404 is specifically used for: determining, based on the first warp distribution data, the stable plane with the smallest direction cosine in the first global coordinate system from multiple tangent planes of the encapsulation structure; establishing a second global coordinate system based on the stable plane; calculating the second warp distribution data based on the first warp distribution data and the second global coordinate system; and determining the warp hotspot coordinates and warp value based on the second warp distribution data and a preset warp hotspot threshold.

[0103] Optionally, based on the second warping distribution data and a preset warping hotspot threshold, the warping hotspot coordinates and warping values ​​are determined. Specifically, the first warping data is calculated using coordinate axis translation and rotation formulas to obtain the second warping distribution data in the second global coordinate system.

[0104] Optionally, the prediction device for thermally induced warpage distribution in another packaging structure provided in this application embodiment further includes a correction module, which is used to determine the correction coefficient based on the material characteristic parameters and structural parameters through a pre-established correction coefficient regression model; and a superposition module 403, which is specifically used to superimpose the warpage value caused by each asymmetric basic unit and the product of the correction coefficient to obtain the first warpage distribution data of each core in the packaging structure.

[0105] Optionally, another device for predicting thermally induced warpage distribution in a packaging structure provided in this application embodiment further includes a model building module, used to establish a warpage database based on the correspondence between the material characteristic parameters and structural parameters of the packaging structure and the actual warpage values; calculate the analytical solution of warpage for the asymmetric basic unit in the packaging structure based on the material characteristic parameters and structural parameters; establish a correction coefficient database based on the analytical solution of warpage and the actual warpage values ​​in the warpage database; and establish a correction coefficient regression model using the correction coefficient database as a sample.

[0106] See Figure 5 The figure is a structural diagram of a device for predicting thermally induced warpage distribution in a packaging structure provided in an embodiment of this application. The device includes a memory 501 and a processor 502.

[0107] Memory 501: Used to store program code and transfer program code to the processor.

[0108] Processor 502: Used to execute the steps of the method for predicting the thermally induced warpage distribution in the above-described package structure according to the instructions in the program code.

[0109] Furthermore, this application also provides a computer-readable storage medium storing computer instructions that, when executed on a device for predicting thermally induced warpage distribution in a package structure, execute the steps of the aforementioned method for predicting thermally induced warpage distribution in a package structure.

[0110] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, for the device and system embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the description of the method embodiments. The device and system embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components indicated as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of the solution in this embodiment according to actual needs. Those skilled in the art can understand and implement this without creative effort.

[0111] The above description is merely one specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A method for predicting thermally induced warpage distribution in a packaging structure, characterized in that, The method comprises: acquiring material characteristic parameters and structure parameters of a packaging structure; calculating warping values caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structure parameters in a plurality of local coordinate systems established based on the positional relationship between a reference point in the packaging structure and each die location; specifically, calculating the coordinates of the reference point and the coordinates of two intersection points between the extension line of the line connecting the reference point and a die and the edge of the packaging structure in the plurality of local coordinate systems established based on the positional relationship between the reference point in the packaging structure and each die location; and calculating the warping values caused by each asymmetric basic unit in the packaging structure based on the coordinates of the reference point and the coordinates of the two intersection points corresponding to each die, respectively; superimposing the warping values caused by each asymmetric basic unit to obtain first warping distribution data of each die in the packaging structure; determining warping hotspot coordinates and warping values based on the first warping distribution data and a preset warping hotspot threshold; specifically, determining a stable plane with the minimum directional cosine in a first overall coordinate system from a plurality of tangent planes of the packaging structure based on the first warping distribution data; establishing a second overall coordinate system based on the stable plane; calculating second warping distribution data based on the first warping distribution data and the second overall coordinate system; and determining warping hotspot coordinates and warping values based on the second warping distribution data and the preset warping hotspot threshold.

2. The method of claim 1, wherein, Before the superimposition of the warping values caused by each asymmetric basic unit to obtain the first warping distribution data of each die in the packaging structure, the method further comprises: determining a correction coefficient through a pre-established correction coefficient regression model based on the material characteristic parameters and the structure parameters; the superimposition of the warping values caused by each asymmetric basic unit to obtain the first warping distribution data of each die in the packaging structure comprises: superimposing the product of the warping values caused by each asymmetric basic unit and the correction coefficient to obtain the first warping distribution data of each die in the packaging structure.

3. The method of claim 2, wherein, The regression model is established by the following method: establishing a warping database based on the correspondence between the material characteristic parameters and the structure parameters of the packaging structure and actual warping values; calculating the warping analytical solution of the asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structure parameters; establishing a correction coefficient database based on the warping analytical solution and the actual warping values in the warping database; establishing a correction coefficient regression model based on the correction coefficient database as a sample.

4. The method of claim 1, wherein, The calculation of the second warping distribution data based on the first warping distribution data and the second overall coordinate system comprises: calculating the first warping distribution data through a coordinate axis translation and rotation formula to obtain the second warping distribution data in the second overall coordinate system.

5. The method of claim 1, wherein, The asymmetric basic unit comprises a die, a filling layer and a substrate layer.

6. An apparatus for predicting a distribution of thermally induced warpage in a package structure, comprising: The device comprises an acquisition module, a calculation module, a superimposition module and a determination module; the acquisition module is configured to acquire material characteristic parameters and structure parameters of a packaging structure; The calculation module is used to calculate the warpage value caused by each asymmetric basic unit in the packaging structure based on the material characteristic parameters and the structural parameters in multiple local coordinate systems established based on the positional relationship between the reference point and each core particle in the packaging structure. Specifically, it calculates the coordinates of the reference point and the coordinates of the two intersection points of the extended line connecting the reference point and the core particle with the edge of the packaging structure in multiple local coordinate systems established based on the positional relationship between the reference point and each core particle. Based on the coordinates of the reference point corresponding to each core particle and the coordinates of the two intersection points, it calculates the warpage value caused by each asymmetric basic unit in the packaging structure. The superposition module is used to superimpose the warpage values ​​caused by each asymmetric basic unit to obtain the first warpage distribution data of each core in the packaging structure. The determining module is used to determine the warping hotspot coordinates and warping value based on the first warping distribution data and a preset warping hotspot threshold; specifically, based on the first warping distribution data, it determines the stable plane with the smallest direction cosine in the first global coordinate system from multiple tangent planes of the encapsulation structure; based on the stable plane, it establishes a second global coordinate system; based on the first warping distribution data and the second global coordinate system, it calculates the second warping distribution data; based on the second warping distribution data and the preset warping hotspot threshold, it determines the warping hotspot coordinates and warping value.

7. A device for predicting thermally induced warpage distribution in a packaging structure, characterized in that, The device includes: a memory and a processor; The memory is used to store program code and transmit the program code to the processor; The processor is configured to execute, according to the program code, the steps of the method for predicting thermally induced warpage distribution in the packaging structure according to any one of claims 1-5.

8. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program that, when run on a device for predicting thermally induced warpage distribution in a package structure, executes the steps of the method for predicting thermally induced warpage distribution in a package structure as described in any one of claims 1-5.

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