A trans-perovskite solar cell with ultraviolet and water stability and a preparation method thereof

Abstract

The application provides a trans-perovskite solar cell with ultraviolet and water stability and a preparation method thereof. x The trans-perovskite solar cell comprises, from bottom to top, a transparent conductive substrate, a first hole transport layer, a second hole transport layer, a perovskite light absorption layer, an electron transport layer, an interface modification layer and a metal electrode layer. 12 The first hole transport layer comprises NiO The second hole transport layer comprises FLUO-C5-COOH The perovskite thin film has the advantages of flatness, small defect density and fast carrier transport, and the overall perovskite solar cell exhibits excellent power conversion efficiency, good ultraviolet operation stability and water stability.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of solar cells, and in particular, the present application relates to a trans-perovskite solar cell with ultraviolet and water stability and a preparation method thereof. BACKGROUND

[0002] With the development of society and the growth of population, the demand for energy of human beings is increasing day by day, and the shortage of traditional fossil fuel resources and the emission of carbon dioxide from its combustion cause great pollution to the environment. In response to the call of China's "double carbon" policy, developing renewable clean energy to reduce carbon emissions has become the only way for human development. Among many new energy sources, solar energy is the most abundant, has no cost itself and will not cause any burden to the ecological environment, and is recognized as the most promising energy to replace traditional fossil fuels. Solar cells are one of the important solar energy utilization technologies, and perovskite solar cells have attracted widespread attention due to their low cost, high efficiency, easy preparation and other advantages. So far, the PCE of single-junction perovskite solar cells has increased from 3.8% in 2009 to 26.7% certified in 2024, which has exceeded those of commercialized silicon-based counterparts and is approaching the Shockley-Queisser (S-Q) limit. However, the perovskite light-absorbing layer has poor long-term stability due to the existence of internal defects, especially under harsh operating conditions, which is still a serious challenge to the commercialization of perovskite solar cells.

[0003] The perovskite thin film prepared by the solution method is easy to introduce a high defect state density, especially causing serious non-radiative recombination at the buried bottom interface, resulting in a decrease in device efficiency, and triggering thin film degradation under water, oxygen, high temperature and light, further deteriorating the stability of the device.

[0004] In order to reduce various defects in perovskite and enhance its adaptability to environmental conditions at the same time, construct high-stability PSC, a large number of studies are devoted to suppressing the defect state in perovskite and improving the operating stability of the device under humidity, heat and light by various strategies such as crystallization control, interface engineering, precursor engineering and strain engineering. However, the important factor that high-energy ultraviolet radiation has serious destructive effect on perovskite lattice has not been paid enough attention. Therefore, how to enhance the buried bottom interface by improving the preparation process and other methods to improve the efficiency of perovskite solar cells and improve the ultraviolet operating stability without losing other performance is still a problem and challenge that needs to be solved urgently. SUMMARY

[0005] In view of the above technical problems, especially for the trans-perovskite solar cell, the purpose of the present application is to solve the problems of defects, energy level mismatching, poor ultraviolet operation stability and poor water stability of the existing buried interface layer, i.e. hole transport layer, and to provide an ethanol solution of a green fluorescent protein chromophore derivative FLUO-C5-COOH as a hole transport layer modifier with ultraviolet conversion function, and a chlorobenzene solution of a green fluorescent protein chromophore derivative FLUO-C 12 with a hydrophobic long carbon chain as an extraction agent to solve the above problems, and to provide a method for preparing a high-efficiency and stable trans-perovskite solar cell, which has the characteristics of good quality of hole transport layer film, uniform and dense perovskite film, high photoelectric conversion efficiency, good ultraviolet stability and water stability, etc.

[0006] In one aspect of the present application, a trans-perovskite solar cell is disclosed. According to an embodiment of the present application, the trans-perovskite solar cell comprises, in order from bottom to top, a transparent conductive substrate, a first layer of hole transport layer, a second layer of hole transport layer, a perovskite light-absorbing layer, an electron transport layer, an interface modification layer and a metal electrode layer, the first layer of hole transport layer comprises NiO x , the second layer of hole transport layer comprises FLUO-C5-COOH, and the perovskite light-absorbing layer comprises a FLUO-C 12 film extracted from a chlorobenzene solution added with a green fluorescent protein chromophore derivative FLUO-C . The perovskite film has the advantages of being smoother, having a smaller defect density, and faster carrier transport, and the overall perovskite solar cell exhibits excellent power conversion efficiency, good ultraviolet operation stability and water stability.

[0007] According to an embodiment of the present application, the trans-perovskite solar cell can further comprise at least one of the following additional technical features:

[0008] According to an embodiment of the present application, the second layer of hole transport layer is a MeO-4PACz film added with FLUO-C5-COOH.

[0009] According to an embodiment of the present application, the perovskite light-absorbing layer is an APbX3 film extracted from a chlorobenzene solution added with a green fluorescent protein chromophore derivative FLUO-C 12 , wherein A is Cs + , methylammonium (MA + ) or formamidinium (FA + ), and X is I - or Br - .

[0010] According to an embodiment of the present application, the transparent conductive substrate is FTO conductive glass.

[0011] According to an embodiment of the present application, the electron transport layer is PCBM.

[0012] According to an embodiment of the present application, the interface modification layer is BCP.

[0013] According to an embodiment of the present application, the metal electrode layer is a silver electrode layer.

[0014] In another aspect of the present application, the present application further provides a method for preparing a trans-perovskite solar cell. According to an embodiment of the present application, the method comprises:

[0015] S1: spin-coating a NiO x water solution on a transparent conductive substrate, performing a first annealing process to obtain a first hole transport layer;

[0016] S2: spin-coating a mixed solution of FLUO-C5-COOH and MeO-4PACz on the first hole transport layer, performing a second annealing process to obtain a second hole transport layer;

[0017] S3: spin-coating a perovskite solution on the second hole transport layer, performing an extraction process with a chlorobenzene solution of FLUO-C 12 , and then performing a third annealing process to obtain a perovskite light-absorbing layer. The method is simple to operate, and the perovskite solar cell prepared according to the method has the characteristics of good quality of the hole transport layer, uniform and dense perovskite film, high photoelectric conversion efficiency, good ultraviolet stability and water stability, etc.

[0018] According to an embodiment of the present application, the above method can further comprise at least one of the following accessory technical features:

[0019] According to an embodiment of the present application, the method further comprises:

[0020] S4: spin-coating a PCBM solution on the perovskite light-absorbing layer, performing a fourth annealing process to obtain an electron transport layer;

[0021] S5: spin-coating a BCP solution on the electron transport layer, performing a fifth annealing process to obtain an interface modification layer;

[0022] S6: evaporating a metal layer on the interface modification layer to obtain a metal electrode layer.

[0023] According to an embodiment of the present application, the transparent conductive substrate is pre-processed by cleaning.

[0024] According to an embodiment of the present application, the cleaning process is performed by the following method:

[0025] The transparent conductive substrate is first rinsed with deionized water and ultrasonically treated. Then it is placed in anhydrous ethanol, isopropanol, acetone and anhydrous ethanol in sequence for ultrasonic treatment. When used, it is dried with high-purity nitrogen gas and then treated with ultraviolet ozone.

[0026] According to an embodiment of the present invention, the transparent conductive substrate is FTO conductive glass.

[0027] According to an embodiment of the present invention, the transparent conductive substrate has a size of 1.5 cm x 1.5 cm.

[0028] According to an embodiment of the present invention, the NiO x NiO in aqueous solution x The concentration should be 5-10 mg / ml. Exceeding this range will lead to a decrease in the efficiency of solar cell devices.

[0029] According to an embodiment of the present invention, the NiO x The aqueous solution is prepared by the following method:

[0030] Nickel nitrate hexahydrate and ammonia solution were dissolved in deionized water and reacted with stirring. The mixture was then washed three times with deionized water by centrifugation. The resulting product was dried under vacuum and finally NiO was obtained in a muffle furnace. x NiO powder x Nanoparticles were dispersed in deionized water at a concentration of 5–10 mg / ml to obtain the NiO. x Aqueous solution.

[0031] According to an embodiment of the present invention, the temperature of the muffle furnace is 250~300°C. Temperatures outside this range will result in reduced efficiency of the solar cell device.

[0032] According to an embodiment of the present invention, the spinning speed in step S1 is 3000~5000 rpm / s. Speeds outside this range will lead to a decrease in the efficiency of the solar cell device.

[0033] According to an embodiment of the present invention, the spinning time in step S1 is 30~60 s. A time outside this range will lead to a decrease in the efficiency of the solar cell device.

[0034] According to an embodiment of the present invention, the temperature of the first annealing treatment is 100~200°C. Temperatures outside this range will result in reduced efficiency of the solar cell device.

[0035] According to an embodiment of the present invention, the first annealing process takes 30 minutes. Steps outside this range will result in reduced efficiency of the solar cell device.

[0036] According to an embodiment of the present invention, the NiO xThe amount of the aqueous solution is 40-60 ul. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0037] According to an embodiment of the present application, the molar ratio of FLUO-C5-COOH and MeO-4PACz in the mixed solution of FLUO-C5-COOH and MeO-4PACz is 0.25%.

[0038] According to an embodiment of the present application, the mixed solution of FLUO-C5-COOH and MeO-4PACz is prepared by the following method:

[0039] The ethanol solutions of FLUO-C5-COOH and MeO-4PACz are prepared respectively, and the mixed solution of FLUO-C5-COOH and MeO-4PACz is obtained by mixing and stirring according to the molar ratio of FLUO-C5-COOH and MeO-4PACz of 0.25%.

[0040] According to an embodiment of the present application, the speed of spin coating in step S2 is 3000-5000 rpm / s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0041] According to an embodiment of the present application, the time of spin coating in step S2 is 30-60 s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0042] According to an embodiment of the present application, the temperature of the second annealing treatment is 100-150 ℃. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0043] According to an embodiment of the present application, the time of the second annealing treatment is 10-20 min. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0044] According to an embodiment of the present application, the amount of the mixed solution of FLUO-C5-COOH and MeO-4PACz is 40-50 ul. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0045] According to an embodiment of the present application, the perovskite solution includes FAPbI3, CsPbI3 and MAPbBr3.

[0046] According to an embodiment of the present application, the perovskite solution is prepared by the following method:

[0047] FAPbI3, CsPbI3 and MAPbBr3 are dissolved in a mixed solvent of DMF and DMSO in a volume ratio of 9:1 to prepare a perovskite precursor solution with a concentration of 1.3 mol / L, and 3% of CsPbI3 and 3% of MAPbBr3 with a molar concentration are added to the FAPbI3 solution after being fully dissolved to obtain the perovskite solution.

[0048] According to an embodiment of the present application, the speed of spin coating in step S3 is 4000-6000 rpm / s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0049] According to an embodiment of the present application, the time of spin coating in step S3 is 20-40 s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0050] According to an embodiment of the present application, 150-200 ul of 0.15% mmol / ml FLUO-C 12 solution is added dropwise uniformly and quickly at the 1st to 5th seconds of spin coating in step S3 for extraction, and then the perovskite intermediate phase film is transferred to perform a third annealing treatment.

[0051] According to an embodiment of the present application, the temperature of the third annealing treatment is 100°C.

[0052] According to an embodiment of the present application, the time of the third annealing treatment is 10-30 min. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0053] According to an embodiment of the present application, the amount of the perovskite solution used is 45 ul.

[0054] According to an embodiment of the present application, the concentration of the PCBM solution is 20-40 mg / ml. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0055] According to an embodiment of the present application, the PCBM solution is obtained by dissolving PCBM in a chlorobenzene solution.

[0056] According to an embodiment of the present application, the speed of spin coating in step S4 is 2000-3000 rpm / s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0057] According to an embodiment of the present application, the time of spin coating in step S4 is 20-40 s. If it is not in this range, the efficiency of the solar cell device will be reduced.

[0058] According to an embodiment of the present application, the temperature of the fourth annealing process is 70-100 ℃. Out of this range, the efficiency of the solar cell device is reduced.

[0059] According to an embodiment of the present application, the time of the fourth annealing process is 10-20 min. Out of this range, the efficiency of the solar cell device is reduced.

[0060] According to an embodiment of the present application, the amount of the PCBM solution is 30 ul.

[0061] According to an embodiment of the present application, the concentration of the BCP solution is 0.5-1 mg / ml. Out of this range, the efficiency of the solar cell device is reduced.

[0062] According to an embodiment of the present application, the BCP solution is obtained by dissolving BCP in trifluoroethanol.

[0063] According to an embodiment of the present application, the speed of the spin-coating in step S5 is 5000-6000 rpm / s. Out of this range, the efficiency of the solar cell device is reduced.

[0064] According to an embodiment of the present application, the time of the spin-coating in step S5 is 20-40 s. Out of this range, the efficiency of the solar cell device is reduced.

[0065] According to an embodiment of the present application, the temperature of the fifth annealing process is 70-100 ℃. Out of this range, the efficiency of the solar cell device is reduced.

[0066] According to an embodiment of the present application, the time of the fifth annealing process is 5-10 min. Out of this range, the efficiency of the solar cell device is reduced.

[0067] According to an embodiment of the present application, the amount of the BCP solution is 50 ul.

[0068] According to an embodiment of the present application, the evaporation in step S6 is performed under vacuum condition.

[0069] According to an embodiment of the present application, the evaporation in step S6 is performed by a vacuum coating machine.

[0070] According to an embodiment of the present application, the evaporation in step S6 is performed by a thermal evaporation method.

[0071] According to an embodiment of the present application, the metal electrode layer is a silver electrode layer.

[0072] According to an embodiment of the present application, the thickness of the metal electrode layer is 150-200 nm. Out of this range, the efficiency of the solar cell device is reduced.

[0073] According to the embodiments of the present application, the present application has at least one of the following advantages:

[0074] (1) The present application provides a trans-perovskite solar cell with ultraviolet and water stability and a preparation method thereof. The method for preparing the perovskite solar cell is first proposed by the inventors. The carboxyl group of FLUO-C5-COOH can perform Lewis acid-base defect passivation on the perovskite. The surface roughness of the MeO-4PACz:FLUO-C5-COOH hole transport layer is very low, and the nucleation sites on the surface are more dispersed, which is conducive to the film crystallization and improvement of the film quality of the perovskite. At the same time, the MeO-4PACz:FLUO-C5-COOH hole transport layer has a very suitable energy level matching with the perovskite, which is more conducive to the extraction and transport of carriers. In addition, the ultraviolet conversion function of FLUO-C5-COOH can convert ultraviolet short waves into long wave visible light that can be absorbed by the perovskite, thereby improving the overall utilization rate of sunlight, and improving the photoelectric conversion efficiency of the perovskite and the ultraviolet stability of the perovskite solar cell. In addition, the FLUO-C5-COOH modification layer on the upper interface of the perovskite has a long carbon chain structure, which has hydrophobic properties and can improve the water stability of the perovskite solar cell. 12 The long carbon chain structure inherent in the modification layer itself has hydrophobic properties, which can improve the water stability of the perovskite solar cell.

[0075] (2) The present application adopts the MeO-4PACz:FLUO-C5-COOH hole transport layer, and the FLUO-C5-COOH modification layer on the upper interface of the perovskite. 12 The two materials have good inherent stability, and no adverse chemical reactions occur between the interface and the perovskite. The obtained perovskite solar cell has excellent stability, and lays a good foundation for maintaining long-term stability in practical applications.

[0076] (3) The trans-perovskite solar cell prepared by the present application has high conversion efficiency, small defect density, good ultraviolet stability, and good water stability, and many other advantages. BRIEF DESCRIPTION OF DRAWINGS

[0077] The above and / or additional aspects and advantages of the present application will become apparent and be readily understood from the following description, taken in conjunction with the following drawings, in which:

[0078] Figure 1 is the molecular formula of a green fluorescent protein chromophore derivative FLUO-C5-COOH;

[0079] Figure 2 is the molecular formula of a green fluorescent protein chromophore derivative FLUO-C 12 ;

[0080] Figure 3Device structure diagram of trans-film perovskite solar cell;

[0081] Figure 4 SEM plan view of perovskite thin film prepared in Example 1;

[0082] Figure 5 XRD pattern of perovskite thin film prepared in Example 1;

[0083] Figure 6 Energy level diagram of each layer of trans-film perovskite solar cell device in Example 1;

[0084] Figure 7 Current density-voltage curve of perovskite solar cell prepared in Example 1;

[0085] Figure 8 UV stability curve of encapsulated perovskite solar cell prepared in Example 1;

[0086] Figure 9 Humidity stability curve of unencapsulated perovskite solar cell prepared in Example 1. DETAILED DESCRIPTION

[0087] The embodiments described below are exemplary and are intended to be illustrative of the present application, and are not to be construed as limiting the present application.

[0088] Furthermore, the terms "first", "second", and the like, do not denote any quantity or order, but are used to distinguish one element from another. Thus, a first feature discussed below could be termed a second feature, and, similarly, a second feature could be termed a first feature, without departing from the scope of the present application. As used herein, the term "exemplary" means "an example of." As used herein, the term "exemplary" means "an example of."

[0089] In the present application, unless specifically stated and limited otherwise, the first feature "on", "above", or "over" the second feature can be directly on, above, or over the second feature, or indirectly on, above, or over the second feature with one or more intervening features. Further, the first feature "on", "above", or "over" the second feature can be directly on, above, or over the second feature, or indirectly on, above, or over the second feature with one or more intervening features. The first feature "under", "below", or "underneath" the second feature can be directly under, below, or underneath the second feature, or indirectly under, below, or underneath the second feature with one or more intervening features.

[0090] The present application is described below with reference to specific embodiments, it is to be understood that these embodiments are merely illustrative of and are not in any way limiting the present application.

[0091] Example 1

[0092] Preparation of trans-perovskite solar cell (structure as shown Figure 1 The steps are as follows:

[0093] (1) Substrate cleaning: Use a glass cutting knife to cut a large piece of transparent conductive substrate FTO into 1.5 cm x 1.5 cm uniform size, then rinse the FTO surface with deionized water and use an ultrasonic machine for ultrasonic treatment for 15 min. Then place in anhydrous ethanol, isopropanol, acetone and anhydrous ethanol in turn for 15 min each time, after cleaning, place in anhydrous ethanol solution for storage, use high-purity nitrogen to dry, and use ultraviolet ozone treatment for 30 min.

[0094] (2) Hole transport layer preparation:

[0095] First layer of hole transport layer: First, stir the nickel nitrate hexahydrate and ammonia water for 30-60 min, then stand for 30 min to take out the supernatant, centrifuge the settled powder with deionized water for 3 times, then vacuum dry in a vacuum drying oven at 100 degrees for 12 hours, finally calcine the obtained powder in a muffle furnace for 2 hours, the calcination temperature is 250-300℃, and the NiO x nanoparticle powder can be obtained. Then disperse and dissolve the NiO x powder in clean deionized water to prepare a 5-10 mg / ml NiO x aqueous solution and filter. Then take out 50 ul and evenly drop on the prepared conductive glass base with a pipette, spin coating with a spin coater, speed 4000 rpm / s, spin coating time 30 s, then anneal at 150℃ on a heating table for 30 min, and the NiO x hole transport layer is obtained.

[0096] Second layer of hole transport layer: Prepare 1.5 mg / ml MeO-4PACz ethanol solution and 0.05 mg / ml FLUO-C5-COOH ethanol solution respectively, mix and stir according to the mass ratio of FLUO-C5-COOH to MeO-4PACz of 0.25% to obtain a mixed solution of FLUO-C5-COOH and MeO-4PACz. Then take out 50 ul and evenly drop on the prepared nickel oxide hole transport layer with a pipette, spin coating with a spin coater, speed 5000 rpm / s, spin coating time 30 s, then anneal at 150℃ on a heating table for 30 min, and the MeO-4PACz:FLUO-C5-COOH hole transport layer is obtained.

[0097] (3) Perovskite light-absorbing layer preparation: FAPbI3, CsPbI3 and MAPbBr3 were dissolved in a mixed solvent of DMF and DMSO in a volume ratio of 9:1 to prepare a perovskite precursor solution with a concentration of 1.3 mol / L. After being fully dissolved, 3% molar concentration of CsPbI3 and 3% molar concentration of MAPbBr3 were added to the FAPbI3 solution, and stirred at a uniform speed for 30-60 min until uniformly mixed to obtain a perovskite solution. Then 45 ul of the perovskite precursor solution was uniformly dropped onto the hole transport layer prepared in step (2) using a pipette, and spin-coated using a spin coater at a speed of 5000 rpm / s for 30 s. At the 3rd second of spin-coating, 150 ul of 0.15% mmol / ml FLUO-C 12 chlorobenzene solution was uniformly and quickly added for extraction, and then transferred to a hot plate for annealing at 100°C for 30 min to obtain a perovskite light-absorbing layer.

[0098] (4) Electron transport layer preparation: First, 30 mg of PCBM powder sample was weighed, then 1 ml of chlorobenzene solution was added, stirred uniformly and filtered to prepare a 30 mg / ml PCBM solution. Then 30 ul was uniformly dropped onto the perovskite light-absorbing layer prepared in step (3) using a pipette, and spin-coated using a spin coater at a speed of 3000 rpm / s for 30 s. Then it was transferred to a hot plate for annealing at 100°C for 10 min to obtain a PCBM electron transport layer.

[0099] (5) Interface modification layer: First, 0.5 mg of BCP powder sample was weighed, then 1 ml of trifluoroethanol solution was added, stirred uniformly and filtered to prepare a 0.5 mg / ml BCP solution. Then 50 ul was uniformly dropped onto the electron transport layer prepared in step (4) using a pipette, and spin-coated using a spin coater at a speed of 5000 rpm / s for 30 s. Then it was transferred to a hot plate for annealing at 70°C for 5 min to obtain a BCP interface modification layer.

[0100] (6) Electrode evaporation: A silver metal electrode layer was uniformly deposited on the electron transport layer by thermal evaporation method under vacuum conditions using a vacuum coating instrument. The film thickness monitor showed that the electron layer thickness was 150-200 nm.

[0101] J-V test: The battery was tested under AM1.5, active layer effective area of 0.06 cm 2 , to obtain an open-circuit voltage of 1.128 V, a short-circuit current density of 23.45 mA cm -2 , a fill factor of 0.806, and a photoelectric conversion efficiency of 21.33%.

[0102] The above examples are tested and analyzed as follows:

[0103] 1. The green fluorescent protein chromophore derivatives FLUO-C5-COOH and FLUO-C 12 The molecular formulas are shown in Figure 1 , Figure 2 .

[0104] 2. The device structure of the trans perovskite solar cell prepared in Example 1 is shown in Figure 3 .

[0105] 3. The SEM plan view of the perovskite thin film prepared in Example 1.

[0106] The SEM plan view of the perovskite thin film prepared in Example 1 is shown in Figure 4 , which is smooth and has good crystallinity.

[0107] 4. The XRD spectrum of the perovskite thin film prepared in Example 1.

[0108] The XRD spectrum of the perovskite thin film prepared in Example 1 is shown in Figure 5 , which has all the diffraction characteristic peaks of the perovskite of this system and good crystallinity, which also corresponds to the test results of Figure 4 .

[0109] 5. The energy level diagram of each layer of the trans perovskite solar cell device in Example 1.

[0110] The energy level diagram of each layer of the trans perovskite solar cell device in Example 1 is shown in Figure 6 , which shows that the valence band of the modified hole transport layer and the perovskite is very close, which is more conducive to promoting the extraction and transport of carriers.

[0111] 6. The current density-voltage curve of the perovskite solar cell prepared in Example 1.

[0112] The current density-voltage curve of the perovskite solar cell prepared in Example 1 is shown in Figure 7 , which exhibits an open-circuit voltage of 1.128 V, a short-circuit current density of 23.45 mA cm -2 , a fill factor of 0.806, and a champion efficiency of 21.33%, which is due to the good crystallinity of the perovskite and the fast carrier transport between the interfaces.

[0113] 7. The ultraviolet stability curve of the encapsulated perovskite solar cell prepared in Example 1.

[0114] In order to exclude the influence of other environmental factors on the stability of the device, the device was packaged for ultraviolet stability test. The ultraviolet stability curve of the packaged perovskite solar cell prepared in Example 1 is shown in Figure 8 It can be seen that the device can still maintain more than 80% working efficiency after 800h of continuous irradiation of ultraviolet light, which indicates that the device of Example 1 has excellent ultraviolet stability.

[0115] 8. Humidity stability curve of the packaged perovskite solar cell prepared in Example 1.

[0116] The humidity stability curve of the unpackaged perovskite solar cell prepared in Example 1 is shown in Figure 9 It can be seen that the device can still maintain more than 50% working efficiency after 200h under the condition of (25±3)℃ and (40±5)% RH, which indicates that the device of Example 1 has excellent humidity stability.

[0117] From the above analysis results, by adding the green fluorescent protein chromophore derivative FLUO-C5-COOH in the hole transport layer MeO-4PACz and adding FLUO-C5-COOH in the extracting agent chlorobenzene, the trans perovskite solar cell prepared in Example 1 has higher power conversion efficiency, excellent ultraviolet stability and humidity stability, which also makes it have great potential in practical application. 12 The trans perovskite solar cell prepared in Example 1 has higher power conversion efficiency, excellent ultraviolet stability and humidity stability, which also makes it have great potential in practical application.

[0118] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, the person skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

Claims

1. A trans-faimiliar perovskite solar cell, characterized by, The anti-trans perovskite solar cell comprises, from bottom to top, a transparent conductive substrate, a first hole transport layer, a second hole transport layer, a perovskite light absorption layer (PVK), an electron transport layer, an interface modification layer and a metal electrode layer, wherein the first hole transport layer comprises NiO x , the second hole transport layer comprises FLUO-C5-COOH, the second hole transport layer is a MeO-4PACz film added with FLUO-C5-COOH, the perovskite light absorption layer comprises FLUO-C 12 , and the material of the perovskite light absorption layer is APbX3, wherein A is Cs + , and X is I - or Br - . 2.The trans-film solar cell of claim 1, wherein, The perovskite light-absorbing layer is an APbX3 thin film prepared by extraction with a chlorobenzene solution added with a green fluorescent protein chromophore derivative FLUO-C 12 , wherein A is Cs + , methylammonium (MA + ) or formamidinium (FA + ), and X is I - or Br - .

3. The inverse perovskite solar cell according to claim 1, characterized in that, the transparent conductive substrate is FTO conductive glass.

4. The inverse perovskite solar cell according to claim 1, characterized in that, the electron transport layer is PCBM.

5. The inverse perovskite solar cell according to claim 1, characterized in that, the interface modification layer is BCP.

6. The inverse perovskite solar cell according to claim 1, characterized in that, the metal electrode layer is a silver electrode layer.

7. A method of preparing a trans-perovskite solar cell, characterized by, comprising: S1: depositing NiO x The aqueous solution is spin-coated on a transparent conductive substrate, and a first annealing treatment is performed to obtain a first hole transport layer. S2: spin-coating a mixed solution of FLUO-C5-COOH and MeO-4PACz on the first hole transport layer, and performing a second annealing treatment to obtain a second hole transport layer; S3: spin-coating a perovskite solution on the second hole transport layer, extracting with a chlorobenzene solution of FLUO-C 12 , and then performing a third annealing treatment to obtain a perovskite light-absorbing layer, the material of the perovskite light-absorbing layer being APbX3, wherein A is Cs + , and X is I - or Br - .

8. The method of claim 7, wherein, the method further comprises: S4: spin-coating a PCBM solution on the perovskite light-absorbing layer, and performing a fourth annealing treatment to obtain an electron transport layer; S5: spin-coating a BCP solution on the electron transport layer, and performing a fifth annealing treatment to obtain an interface modification layer; S6: evaporating a metal layer on the interface modification layer to obtain a metal electrode layer.

9. The method of claim 7, wherein, the transparent conductive substrate is pre-treated by cleaning.

10. The method of claim 9, wherein, the cleaning treatment is performed by: firstly washing the transparent conductive substrate with deionized water and performing ultrasonic treatment, and then placing it in anhydrous ethanol, isopropanol, acetone and anhydrous ethanol for ultrasonic treatment; when used, dry it with high-purity nitrogen, and then perform ultraviolet ozone treatment.

11. The method of claim 7, wherein, the transparent conductive substrate is FTO conductive glass.

12. The method of claim 7, wherein, the size of the transparent conductive substrate is 1.5 cm x 1.5 cm.

13. The method of claim 7, wherein, The NiO x The concentration of NiO in the aqueous solution is 5-10 mg / ml. x The concentration of NiO in the aqueous solution is 5-10 mg / ml.

14. The method of claim 7, wherein, The NiO x The aqueous solution is prepared by NiO was obtained by stirring the reaction of nickel nitrate hexahydrate and ammonia dissolved in deionized water, washing the product three times by centrifugation with deionized water, vacuum drying the product, and finally calcining in a muffle furnace x powder, NiO x nanoparticles were dispersed in deionized water at a concentration of 5-10 mg / ml to obtain the NiO x aqueous solution.

15. The method of claim 14, wherein, the temperature of the muffle furnace is 250-300℃.

16. The method of claim 7, wherein, the spin-coating speed in step S1 is 3000-5000 rpm / s.

17. The method of claim 7, wherein, the spin-coating time in step S1 is 30-60 s.

18. The method of claim 7, wherein, the first annealing treatment temperature is 100-200℃.

19. The method of claim 7, wherein, the first annealing treatment time is 30 min.

20. The method of claim 7, wherein, The NiO x The aqueous solution was used in an amount of 40-60 ul.

21. The method of claim 7, wherein, the molar ratio of FLUO-C5-COOH to MeO-4PACz in the mixed solution of FLUO-C5-COOH and MeO-4PACz is 0.25%.

22. The method of claim 7, wherein, the mixed solution of FLUO-C5-COOH and MeO-4PACz is prepared by: respectively preparing ethanol solutions of FLUO-C5-COOH and MeO-4PACz with a certain concentration, mixing and stirring according to the molar ratio of FLUO-C5-COOH to MeO-4PACz of 0.25% to obtain the mixed solution of FLUO-C5-COOH and MeO-4PACz.

23. The method of claim 7, wherein, the spin-coating speed in step S2 is 3000-5000 rpm / s.

24. The method of claim 7, wherein, the spin-coating time in step S2 is 30-60 s.

25. The method of claim 7, wherein, the second annealing treatment temperature is 100-150℃.

26. The method of claim 7, wherein, the second annealing treatment time is 10-30 min.

27. The method of claim 7, wherein, the amount of the mixed solution of FLUO-C5-COOH and MeO-4PACz is 40-50 ul.

28. The method of claim 7, wherein, the perovskite solution comprises FAPbI3, CsPbI3 and MAPbBr3.

29. The method of claim 7, wherein, the perovskite solution is prepared by: FAPbI3, CsPbI3 and MAPbBr3 are respectively dissolved in a mixed solvent of DMF and DMSO in a volume ratio of 9:1 to prepare a perovskite precursor solution with a concentration of 1.3 mol / L, and after being fully dissolved, 3% of CsPbI3 and 3% of MAPbBr3 with a molar concentration are added to the FAPbI3 solution to obtain the perovskite solution.

30. The method of claim 7, wherein, The speed of spin coating in step S3 is 4000-6000 rpm / s.

31. The method of claim 7, wherein, The time of spin coating in step S3 is 20-40 s.

32. The method of claim 7, wherein, In step S3, 150-200 ul of 0.15% mmol / ml FLUO-C 12 solution in chlorobenzene was added uniformly and rapidly at the 1st to 5th seconds of the spin coating count down, followed by transferring the perovskite intermediate phase thin film to perform a third annealing process.

33. The method of claim 7, wherein, The temperature of the third annealing treatment is 100℃.

34. The method of claim 7, wherein, The time of the third annealing treatment is 10-30 min.

35. The method of claim 7, wherein, The amount of the perovskite solution is 45 ul.

36. The method of claim 8, wherein, The concentration of the PCBM solution is 20-40 mg / ml.

37. The method of claim 8, wherein, The PCBM solution is obtained by dissolving PCBM in a chlorobenzene solution.

38. The method of claim 8, wherein, The speed of spin coating in step S4 is 2000-3000 rpm / s.

39. The method of claim 8, wherein, The time of spin coating in step S4 is 20-40 s.

40. The method of claim 8, wherein, The temperature of the fourth annealing treatment is 70-100℃.

41. The method of claim 8, wherein, The time of the fourth annealing treatment is 10-20 min.

42. The method of claim 8, wherein, The amount of the PCBM solution is 30 ul.

43. The method of claim 8, wherein, The concentration of the BCP solution is 0.5-1 mg / ml.

44. The method of claim 8, wherein, The BCP solution is obtained by dissolving BCP in trifluoroethanol.

45. The method of claim 8, wherein, The speed of spin coating in step S5 is 5000-6000 rpm / s.

46. The method of claim 8, wherein, The time of spin coating in step S5 is 20-40 s.

47. The method of claim 8, wherein, The temperature of the fifth annealing treatment is 70-100℃.

48. The method of claim 8, wherein, The time of the fifth annealing treatment is 5-10 min.

49. The method of claim 8, wherein, The amount of the BCP solution is 50 ul.

50. The method of claim 8, wherein, The evaporation in step S6 is performed under vacuum conditions.

51. The method of claim 8, wherein, The evaporation in step S6 is performed by a vacuum coating machine.

52. The method of claim 8, wherein, The evaporation in step S6 is performed by a thermal evaporation method.

53. The method of claim 8, wherein, The metal electrode layer is a silver electrode layer.

54. The method of claim 8, wherein, The thickness of the metal electrode layer is 150-200 nm.

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