Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device, a preparation method thereof and a display device, the photoelectric device comprises an anode, a light emitting layer, an electronic function layer and a cathode which are stacked in sequence, and the electronic function layer comprises an electronic function material and a metal trapping agent of metal ions. An electronic functional layer of the photoelectric device comprises the metal trapping agent, when metal ions in the cathode are diffused into the electronic functional layer, the metal trapping agent can trap the metal ions diffused into the electronic functional layer from the cathode, and therefore the metal trapping agent can be used for trapping the metal ions diffused into the electronic functional layer from the cathode. According to the invention, short circuit of the device possibly caused by diffusion of the metal ions into the electronic functional layer can be effectively avoided, and the metal ions diffused into the electronic functional layer can be effectively prevented from reacting with the electronic functional material to generate a metal compound to influence injection and transmission of electrons, so that the stability of the photoelectric device is effectively improved.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to an optoelectronic device, a method for preparing an optoelectronic device, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] The lifespan of existing optoelectronic devices is relatively short and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a method for preparing a photoelectric device, aiming to improve the problem of short life of the photoelectric device prepared by the existing preparation method.

[0006] The embodiment of the present application is implemented as follows: a photoelectric device includes an anode, a light-emitting layer, an electronic functional layer and a cathode stacked in sequence, wherein the electronic functional layer includes an electronic functional material and a metal capture agent.

[0007] Optionally, in some embodiments, the electronic functional layer is composed of the electronic functional material and the metal capture agent.

[0008] Optionally, in some embodiments, the mass ratio of the metal capture agent to the electronic functional material is 1-10%, or the mass ratio of the metal capture agent to the electronic functional material is 1-5%.

[0009] Optionally, in some embodiments, the metal capture agent includes a nitrogen-containing polymer, and the nitrogen-containing polymer includes one or more of an amine polymer or an ammonium polymer.

[0010] Optionally, in some embodiments, the amine polymer includes one or more of polyethyleneimine, polyacrylamide, polyaniline, and polyethoxyethyleneimine; and / or

[0011] The ammonium polymer includes one or more of polydimethyldiallylammonium chloride and trimethylvinylbenzylammonium chloride.

[0012] Optionally, in some embodiments, the cathode includes a first metal single substance electrode and a first alloy electrode, the material of the first metal single substance electrode includes Ag, Ca, Ba, Al or Mg, and the material of the first alloy electrode includes one or more of Au:Mg and Ag:Mg; and / or

[0013] The anode includes a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a second metal single substance electrode or a second alloy electrode, the material of the doped metal oxide electrode includes one or more of indium doped tin oxide, fluorine doped tin oxide, and antimony doped tin oxide, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, and the material of the second metal single substance electrode includes one or more of Ni, Pt, Au, Ir, Cu, and Mo; and / or

[0014] The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or

[0015] The electronic functional material is selected from one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional material includes one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5. The metal oxide in the doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3. The doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor materials include one or more of InP and GaP; the IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS; the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives; and / or

[0016] The photoelectric device also includes a hole transport layer located between the anode and the light-emitting layer, and the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3 -methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4- 4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines , 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or

[0017] The photoelectric device also includes a hole injection layer located between the anode and the light-emitting layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

[0018] Accordingly, some embodiments of the present application also provide a method for preparing a photoelectric device, comprising the following steps:

[0019] Providing a photovoltaic device preform, the photovoltaic device preform comprising a stacked anode and a light-emitting layer;

[0020] Providing a material for an electronic functional layer, the material for the electronic functional layer comprising an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the light-emitting layer to obtain the electronic functional layer;

[0021] Prepare a cathode on the surface of the electronic functional layer away from the anode to obtain a photoelectric device;

[0022] or,

[0023] Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a cathode;

[0024] Providing a material for an electronic functional layer, the material for the electronic functional layer comprising an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the cathode to obtain the electronic functional layer;

[0025] A stacked light-emitting layer and an anode are sequentially prepared on the surface of the electronic functional layer away from the cathode to obtain a photoelectric device.

[0026] Optionally, in some embodiments of the present application, the optoelectronic device preform further includes a hole functional layer located between the anode and the light-emitting layer; or

[0027] The sequentially preparing a stacked light-emitting layer and an anode on a surface of the electronic functional layer away from the cathode comprises: sequentially forming a stacked light-emitting layer, a hole functional layer and an anode on a surface of the electronic functional layer away from the cathode.

[0028] Optionally, in some embodiments of the present application, the method of disposing the material of the electronic functional layer on the light-emitting layer includes: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion, and disposing the first dispersion on the light-emitting layer; or

[0029] The method for disposing the material of the electronic functional layer on the cathode comprises: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion liquid, and disposing the first dispersion liquid on the cathode.

[0030] Optionally, in some embodiments of the present application, the first solvent includes one or more of isopropanol, ethanol, dimethyl sulfoxide, N-methylpyrrolidone and chlorobenzene; and / or

[0031] In the first dispersion, the concentration of the electronic functional material is 10 to 50 mg / ml; and / or

[0032] In the first dispersion, the mass ratio of the metal capture agent to the electronic functional material is 1-5%; and / or

[0033] The metal capture agent comprises a nitrogen-containing polymer, wherein the nitrogen-containing polymer comprises one or more of an amine polymer or an ammonium polymer; and / or

[0034] After the first dispersion liquid is disposed on the light-emitting layer or the first dispersion liquid is disposed on the cathode, an annealing treatment is further included, wherein the annealing treatment is performed at a temperature of 80 to 100° C. and for a time of 10 to 60 minutes.

[0035] Correspondingly, an embodiment of the present application also provides a display device, comprising the above-mentioned optoelectronic device.

[0036] The electronic functional layer of the optoelectronic device described in the present application includes the metal scavenger. When the metal ions in the cathode diffuse into the electronic functional layer, the metal scavenger can capture the metal ions diffused from the cathode to the electronic functional layer. In this way, it is possible to effectively avoid the short circuit of the device caused by the diffusion of metal ions from the cathode into the electronic functional layer, and it is possible to effectively avoid the metal ions diffused into the electronic functional layer from reacting with the electronic functional materials to generate metal compounds and affecting the injection and transmission of electrons, thereby effectively improving the stability of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application;

[0039] Figure 2is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0040] Figure 3 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0041] Figure 4 This is a flow chart of another method for preparing a photoelectric device provided in an embodiment of the present application.

[0042] Reference numerals:

[0043] Optoelectronic device 100 ; anode 10 ; light-emitting layer 20 ; electronic functional layer 30 ; cathode 40 ; hole transport layer 50 ; hole injection layer 60 . DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0045] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0046] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0047] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0048] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0049] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0050] Metal elements or alloys are often used as cathode materials in optoelectronic devices, and organic semiconductor materials or inorganic semiconductor particles are often used as electronic functional layer materials. The metal ions in the cathode are easily diffused in the organic materials or inorganic particles, causing the device to short-circuit, or react with the organic materials or inorganic particles to form metal compounds, which affect the injection and transmission of carriers, resulting in poor device stability and short life.

[0051] The technical solution of this application is as follows:

[0052] First, see Figure 1 The embodiment of the present application provides a photoelectric device 100, comprising an anode 10, a light-emitting layer 20, an electronic functional layer 30 and a cathode 40 which are stacked in sequence, wherein the electronic functional layer 30 comprises an electronic functional material and a metal capture agent.

[0053] The electronic functional layer 30 of the optoelectronic device 100 described in the present application includes the metal scavenger. When the metal ions in the cathode 40 diffuse into the electronic functional layer 30, the metal scavenger can capture the metal ions diffused from the cathode 40 to the electronic functional layer 30. In this way, it is possible to effectively avoid the device short circuit that may be caused by the diffusion of metal ions into the electronic functional layer 30, and it is possible to effectively avoid the metal ions diffused into the electronic functional layer 30 from reacting with the electronic functional materials to generate metal compounds and affecting the injection and transmission of electrons, thereby effectively improving the stability of the optoelectronic device 100.

[0054] The metal capture agent includes a nitrogen-containing polymer, and the nitrogen-containing polymer includes but is not limited to one or more of an amine polymer or an ammonium polymer.

[0055] It is understood that, in the present application, an amine polymer refers to a polymer containing one or more amine groups in the molecule. An ammonium polymer refers to a polymer containing ammonium ions in the molecule.

[0056] The amine groups in the amine polymer can form a complex with the electrode metal ions entering the electronic functional layer (i.e., the metal ions of the electrode diffused into the electronic functional layer) through coordination, thereby achieving adsorption of the metal ions in the electrode entering the electronic functional layer. The ammonium ions in the ammonium polymer can form a complex with the electrode metal ions entering the electronic functional layer through ion exchange, thereby achieving adsorption of the metal ions in the electrode in the electronic functional layer.

[0057] The amine polymer includes but is not limited to one or more of polyethyleneimine, polyacrylamide, polyaniline, and polyethoxyethyleneimine. The amine polymer has good metal ion capture capability, good conductivity, and optical properties, so that it can effectively capture metal ions diffused from the cathode 40 to the electronic functional layer 30, and improve the luminous efficiency and life of the optoelectronic device 100.

[0058] The ammonium polymer includes but is not limited to one or more of polydimethyldiallylammonium chloride and trimethylvinylbenzylammonium chloride. The ammonium polymer has good metal ion capture capability, good conductivity and optical properties, so that it can effectively capture metal ions diffused from the cathode 40 to the electronic functional layer 30, and improve the luminous efficiency and life of the optoelectronic device 100.

[0059] The mass ratio of the metal capture agent to the electronic functional material is 1-10%, preferably 1-5%, for example, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc. Within the above-mentioned proportion range, the metal ions diffused into the electronic functional layer 30 can be effectively captured, and the electronic functional layer 30 can be ensured to have better electronic transmission performance.

[0060] The electronic functional layer 30 may be an electron transport layer or an electron injection layer, and correspondingly, the electronic functional material may be an electron transport material or an electron injection material.

[0061] The electronic functional material is selected from but not limited to one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional material is an inorganic particle known to be used in the electronic functional layer of an optoelectronic device, for example, it may include but is not limited to doped metal oxide particles, undoped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials and Group IB-IIIA-VIA semiconductor materials. The material of the undoped metal oxide particles includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5. The metal oxide in the doped metal oxide particles includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3. The doping elements in the doped metal oxide particles include but are not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga. The Group IIB-VIA semiconductor materials include but are not limited to one or more of ZnS, ZnSe, and CdS. The Group IIIA-VA semiconductor materials include but are not limited to one or more of InP and GaP. The Group IB-IIIA-VIA semiconductor materials include but are not limited to one or more of CuInS and CuGaS. The organic electronic functional material includes, but is not limited to, one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM).

[0062] In some embodiments, the average particle size of the inorganic particles is 3-5 nm. Within the range, the inorganic semiconductor particles have high stability, and the thin film prepared from the inorganic semiconductor particles has good film-forming properties and fewer holes.

[0063] In some embodiments, in the doped metal oxide particles, the mass fraction of the doping element in the doped metal oxide particles is 1-20%, for example, 1-10%, 5-15%, 8-18%, 10-20%, etc. Within the doping amount range, the stability and electron transport performance of the electronic functional layer 30 can be effectively improved.

[0064] The cathode 40 is an electrode with a relatively low work function, for example, it may include but is not limited to a first metal single substance electrode with a relatively low work function and a first alloy electrode with a relatively low work function. The material of the first metal single substance electrode with a relatively low work function includes but is not limited to Ag, Ca, Ba, Al or Mg. The material of the first alloy electrode with a relatively low work function includes but is not limited to one or more of Au:Mg and Ag:Mg. The use of electrodes with relatively low work functions can improve the luminous efficiency of optoelectronic devices. However, the metal ions in these electrodes with relatively low work functions are easily diffused into other functional layers of the device. By adding a metal capture agent to the electronic functional layer, the diffused metal ions can be effectively captured to prevent the metal ions from damaging the functional layer of the device, thereby improving the stability and life of the device.

[0065] The anode 10 is an electrode with a relatively high work function for optoelectronic devices known in the art, for example, it may include but is not limited to a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a second metal single substance electrode or a second alloy electrode. The material of the doped metal oxide electrode may include but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO). The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, etc., wherein " / " represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode including AZO layers, Ag layers and AZO layers stacked in sequence. The material of the second metal single substance electrode may include, but is not limited to, one or more of Ni, Pt, Au, Ir, Cu, and Mo.

[0066] In some embodiments, the electronic functional layer 30 is composed of the electronic functional material and the metal capture agent for capturing metal ions diffused from the cathode to the electronic functional layer.

[0067] Please refer to Figure 2 In some embodiments, the optoelectronic device 100 further includes a hole functional layer, and the hole functional layer is located between the anode 10 and the light-emitting layer 20. The hole functional layer includes one or both of a hole transport layer 50 and a hole injection layer 60.

[0068] The material of the light-emitting layer 20 may include, but is not limited to, one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0069] The organic light-emitting material may include, but is not limited to, one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0070] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0071] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0072] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0073] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0074] The material of the hole transport layer 50 can be a material known in the art for a hole transport layer, for example, can be selected from but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N ...1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N (3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl -1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazol-9-yl)benzene (MCP ), polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO. One or more.

[0075] The material of the hole injection layer 60 can also be a material known in the art for hole injection layer, for example, it can be selected from but not limited to 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS doped with s-MoO3 derivatives (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide. One or more.

[0076] It is understood that in some embodiments, the optoelectronic device 100 may also include functional layers conventionally used in optoelectronic devices to help improve the performance of optoelectronic devices, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc.

[0077] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0078] In some embodiments, the optoelectronic device 100 further includes a substrate, which is disposed on a surface of the anode 10 facing away from the light-emitting layer 20 , or the substrate is disposed on a surface of the cathode 40 facing away from the light-emitting layer 20 .

[0079] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0080] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device or an organic optoelectronic device.

[0081] Second, see Figure 3 and Figure 1 The present invention provides a method for preparing a photoelectric device, comprising the following steps:

[0082] Step S11, providing a photoelectric device preform, wherein the photoelectric device preform comprises a stacked anode 10 and a light-emitting layer 20;

[0083] Step S12, providing a material for an electronic functional layer, wherein the material for the electronic functional layer includes an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the light-emitting layer 20 to obtain an electronic functional layer 30;

[0084] Step S13 , preparing a cathode 40 on a surface of the electronic functional layer 30 away from the anode 10 , to obtain a photoelectric device 100 .

[0085] In some embodiments, see Figure 2 The optoelectronic device preform further includes a hole functional layer located between the anode 10 and the light-emitting layer 20 , wherein the hole functional layer includes a hole transport layer 50 and / or a hole injection layer 60 .

[0086] It can be understood that when the hole functional layer includes a hole transport layer 50 and a hole injection layer 60 , the hole injection layer 60 is located between the anode 10 and the hole transport layer 50 .

[0087] Third, see Figure 4 and Figure 1 The present invention provides another method for preparing a photoelectric device, comprising the following steps:

[0088] Step S21, providing a photoelectric device preform, wherein the photoelectric device preform includes a cathode 40;

[0089] Step S22, providing a material for an electronic functional layer, wherein the material for the electronic functional layer includes an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the cathode 40 to obtain the electronic functional layer 30;

[0090] Step S23 , sequentially preparing a stacked light-emitting layer 20 and an anode 10 on a surface of the electronic functional layer 30 away from the cathode 40 to obtain a photoelectric device 100 .

[0091] In some embodiments, see Figure 2 The step S23 includes: sequentially forming a stacked light-emitting layer 20, a hole functional layer and an anode 10 on the surface of the electronic functional layer 30 away from the cathode 40, wherein the hole functional layer includes a hole transport layer 50 and / or a hole injection layer 60, to obtain a photoelectric device 100.

[0092] It can be understood that when the hole functional layer includes the hole transport layer 50 and the hole injection layer 60 , the hole transport layer 50 can be first formed on the light emitting layer 20 , and then the hole injection layer 60 can be formed on the hole transport layer 50 .

[0093] In the above two preparation methods, the method of forming the anode 10, the light-emitting layer 20, the electronic functional layer 30, the cathode 40, the hole transport layer 50, and the hole injection layer 60, and the method of setting the zinc fluoride on the optoelectronic device preform, can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical plating and solution method, among which the physical plating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, blade coating, printing, dip pulling, immersion, spraying, rolling, casting, slit coating, and strip coating.

[0094] In some embodiments, the method of disposing the material of the electronic functional layer on the light-emitting layer 20 includes: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion, and disposing the first dispersion on the light-emitting layer 20 .

[0095] In some embodiments, the method of disposing the material of the electronic functional layer on the cathode 40 includes: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion, and disposing the first dispersion on the cathode 40 .

[0096] The first solvent may include, but is not limited to, one or more of isopropanol, ethanol, DMSO (dimethyl sulfoxide), NMP (N-methylpyrrolidone), and chlorobenzene.

[0097] In some embodiments, in the first dispersion, the concentration of the electronic functional material is 10-50 mg / ml, for example, 10 mg / ml, 12 mg / ml, 15 mg / ml, 16 mg / ml, 18 mg / ml, 20 mg / ml, 22 mg / ml, 25 mg / ml, 28 mg / ml, 30 mg / ml, 35 mg / ml, 38 mg / ml, 40 mg / ml, 45 mg / ml, 48 mg / ml, 50 mg / ml, etc. Within the concentration range, it is beneficial to prepare a wet film with good film forming properties, and further to prepare an electronic functional layer 30 with good film forming properties.

[0098] In some embodiments, in the first dispersion, the mass ratio of the metal capture agent to the electron transport material is 1-10%.

[0099] In some embodiments, the mass ratio of the metal capture agent to the electron transport material in the first dispersion is 1-5%. In some embodiments, after the first dispersion is disposed on the light emitting layer 20 or the first dispersion is disposed on the cathode 40, an annealing process is further included.

[0100] The annealing treatment is performed at a temperature of 80 to 100° C. and for a time of 10 to 60 minutes.

[0101] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an electron injection layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0102] In a fourth aspect, the present application further relates to a display device, which includes the optoelectronic device 100 .

[0103] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0104] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0105] Example 1

[0106] Providing a conductive glass substrate having an ITO anode 10 with a thickness of 30 nm, cleaning the ITO conductive glass with a detergent to preliminarily remove stains on the surface, then ultrasonically cleaning it in deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes respectively to remove impurities on the surface, and finally drying it with high-purity nitrogen;

[0107] In a glove box, spin-coat the anode 10 with a PEDOT:PSS material at a speed of 5000 rpm for 30 seconds and anneal at 150° C. for 15 minutes to obtain a hole injection layer 60 with a thickness of 30 nm.

[0108] Spin coating the TFB material on the hole injection layer 60, wherein the spin coating speed is 3000 rpm, the time is 30 seconds, UV treatment is 10 minutes, and annealing is performed at 200°C for 10 minutes to obtain a hole transport layer 50 with a thickness of 25 nm;

[0109] A CdZnSe quantum dot solution with a concentration of 20 mg / ml is spin-coated on the hole transport layer 50, wherein the spin-coating speed is 2000 rpm, the time is 30 s, and the annealing is performed at 100° C. for 10 min to obtain a light-emitting layer 20 with a thickness of 25 nm;

[0110] Prepare an ethanol mixed solution of polyethyleneimine and ZnO nanoparticles, wherein the concentration of ZnO nanoparticles is 30 mg / mL, the concentration of polyethyleneimine is 3 mg / ml, and the mass ratio of polyethyleneimine to ZnO nanoparticles is 10%, and spin-coat the mixed solution on the light-emitting layer 20, wherein the spin-coating speed is 3000 rpm, the time is 30 s, and annealing is performed at 80° C. for 30 min to obtain an electron transport layer with a thickness of 30 nm;

[0111] Ag material is evaporated on the electron transport layer at a rate of 1 angstrom / second for 1000 seconds, and the vacuum degree is not higher than 3×10 -4 Pa, a cathode 40 having a thickness of 100 nm is obtained;

[0112] The optoelectronic device 100 is obtained by packaging in an environment where both the oxygen content and the water content are lower than 0.1 ppm.

[0113] Example 2

[0114] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, polydimethyldiallylammonium chloride is used to replace the polyethyleneimine in Embodiment 1.

[0115] Example 3

[0116] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, polyacrylamide is used to replace the polyethyleneimine in Embodiment 1.

[0117] Example 4

[0118] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, polyaniline is used to replace the polyethyleneimine in Embodiment 1.

[0119] Example 5

[0120] This embodiment is substantially the same as the embodiment 1, except that, in this embodiment, the concentration of polyethyleneimine is 0.3 mg / ml, and in this embodiment, the mass ratio of polyethyleneimine to ZnO nanoparticles is 1%.

[0121] Example 6

[0122] This embodiment is substantially the same as the embodiment 1, except that, in this embodiment, the concentration of polyethyleneimine is 1.5 mg / ml, and the mass ratio of polyethyleneimine to ZnO nanoparticles is 5%.

[0123] Example 7

[0124] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, Mg-doped ZnO is used to replace ZnO in Embodiment 1.

[0125] Example 8

[0126] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, Mg-doped SnO2 is used to replace ZnO in Embodiment 1.

[0127] Comparative Example 1

[0128] This comparative example is substantially the same as Example 1, except that polyethyleneimine is not included in the mixed solution of this comparative example.

[0129] Comparative Example 2

[0130] This comparative example is substantially the same as Example 1, except that the concentration of polyethyleneimine in this comparative example is 0.2 mg / ml, and the mass ratio of polyethyleneimine to ZnO nanoparticles is 0.67%.

[0131] Comparative Example 3

[0132] This comparative example is substantially the same as Example 1, except that the concentration of polyethyleneimine in this comparative example is 10 mg / ml, and the mass ratio of polyethyleneimine to ZnO nanoparticles is 33.3%.

[0133] Comparative Example 4

[0134] This comparative example is substantially the same as Example 1, except that the concentration of polyethyleneimine in this comparative example is 11 mg / ml, and the mass ratio of polyethyleneimine to ZnO nanoparticles is 36.67%.

[0135] Comparative Example 5

[0136] This comparative example is substantially the same as Example 8, except that polyethyleneimine is not included in the mixed solution of this comparative example.

[0137] The maximum brightness L of the photoelectric devices of Examples 1 to 8 and Comparative Examples 1 to 5 prepared was measured. max , life T95 and current test at voltage 6V, and then the prepared photoelectric devices of Examples 1 to 8 and Comparative Examples 1 to 5 were placed for 1 month and the maximum brightness L max , life T95 and current test at voltage 6V, the initial maximum brightness L of the photoelectric devices of Examples 1 to 8 and Comparative Examples 1 to 5 are obtained. max , initial life T95, maximum brightness L max The change rate, life T95 change rate and current change rate at 6V. See Table 1 for the test results.

[0138] Among them, the maximum brightness L max The test method is: using FSD FPD optical characteristic measurement equipment, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminous spectrum, and recording the maximum brightness L max And the external quantum efficiency EQE of the device is obtained by calculation;

[0139] The test method for lifespan T95 is: in CDA gas, under constant current or voltage driving, measure the time taken for the device brightness to decay to a certain percentage of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, which is the actual measured lifespan. The constant current is 2mA.

[0140] Table 1:

[0141]

[0142]

[0143] From Table 1 we can see that:

[0144] Compared with the comparative example 1, the initial maximum brightness and life of the optoelectronic devices of Examples 1 to 7 are basically similar. However, after being placed for one month, the maximum brightness change rate, life change rate and current change rate of the optoelectronic devices of Examples 1 to 7 are smaller than those of the optoelectronic device of Comparative Example 1. It can be seen that the optoelectronic device of the present application has high stability. The reason may be that the electron transport layer of the optoelectronic device of the present application includes a metal capture agent, and the metal capture agent can capture metal ions diffused into the electronic functional layer. In this way, it can effectively avoid the short circuit of the device caused by the diffusion of metal ions into the electronic functional layer, and can effectively avoid the metal ions diffused into the electronic functional layer. React with the electronic functional material to generate metal compounds and affect the injection and transmission of electrons, thereby effectively improving the stability of the optoelectronic device;

[0145] Compared with the comparative example 2, the initial maximum brightness and life of the optoelectronic devices of Examples 1, 5 to 6 are basically similar. However, after being placed for one month, compared with the optoelectronic device of Comparative Example 2, the maximum brightness change rate, life change rate and current change rate of the optoelectronic devices of Examples 1, 5 to 6 are smaller. It can be seen that the optoelectronic device of the present application has a higher stability. The reason may be that the proportion of the metal capture agent in Comparative Example 2 is low, and the metal ions diffused into the electronic functional layer cannot be effectively captured;

[0146] Compared with the optoelectronic devices of Comparative Examples 3-4, the maximum brightness change rate, life change rate and current change rate of the optoelectronic devices of Examples 1, 5-6 after being placed for one month are smaller. However, the initial brightness and life of the optoelectronic devices of Comparative Examples 3-4 are lower. The reason may be that the amount of metal capture agent added is too high, which affects the conductivity and other properties of the device.

[0147] Compared with comparative example 5, the initial maximum brightness and lifespan of the optoelectronic devices of Example 8 are basically similar. However, after one month of placement, compared with the optoelectronic device of comparative example 5, the maximum brightness change rate, life change rate and current change rate of the optoelectronic device of Example 8 are smaller. It can be seen that the optoelectronic device of the present application has higher stability. The reason may be that the electron transport layer of the optoelectronic device of the present application includes a metal scavenger, and the metal scavenger can capture metal ions diffused into the electronic functional layer. In this way, it can effectively avoid the short circuit of the device caused by the diffusion of metal ions into the electronic functional layer, and can effectively avoid the metal ions diffused into the electronic functional layer. React with the electronic functional material to generate metal compounds and affect the injection and transmission of electrons, thereby effectively improving the stability of the optoelectronic device.

[0148] The optoelectronic devices and their preparation methods, and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, comprising an anode, a light-emitting layer, an electronic functional layer and a cathode stacked in sequence, characterized in that: The electronic functional layer includes electronic functional materials and metal capture agents.

2. The optoelectronic device according to claim 1, characterized in that The electronic functional layer is composed of the electronic functional material and the metal capture agent.

3. The optoelectronic device according to claim 1, characterized in that The mass ratio of the metal capture agent to the electronic functional material is 1 to 10%; or, The mass ratio of the metal capture agent to the electronic functional material is 1-5%.

4. The optoelectronic device according to claim 1, characterized in that The metal capture agent includes a nitrogen-containing polymer, and the nitrogen-containing polymer includes one or more of an amine polymer or an ammonium polymer.

5. The optoelectronic device according to claim 4, characterized in that The amine polymer includes one or more of polyethyleneimine, polyacrylamide, polyaniline, and polyethoxyethyleneimine; and / or The ammonium polymer includes one or more of polydimethyldiallylammonium chloride and trimethylvinylbenzylammonium chloride.

6. The optoelectronic device according to claim 1, wherein: The cathode includes a first metal single substance electrode and a first alloy electrode, the material of the first metal single substance electrode includes Ag, Ca, Ba, Al or Mg, and the material of the first alloy electrode includes one or more of Au:Mg and Ag:Mg; and / or The anode includes a doped metal oxide electrode, a composite electrode, a graphene electrode, a carbon nanotube electrode, a second metal single substance electrode or a second alloy electrode, the material of the doped metal oxide electrode includes one or more of indium doped tin oxide, fluorine doped tin oxide, and antimony doped tin oxide, the composite electrode includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS or ZnS / Al / ZnS, and the material of the second metal single substance electrode includes one or more of Ni, Pt, Au, Ir, Cu, and Mo; and / or The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; and / or The electronic functional material is selected from one or more of inorganic electronic functional materials and organic electronic functional materials. The inorganic electronic functional material includes one or more of doped metal oxide particles, undoped metal oxide particles, IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials. The material of the undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2 and Ta2O5. The metal oxide in the doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5 and Al2O3. The doping elements in the doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga; the IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS; the IIIA-VA semiconductor materials include one or more of InP and GaP; the IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS; the organic electronic functional materials include one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives; and / or The photoelectric device also includes a hole transport layer located between the anode and the light-emitting layer, and the material of the hole transport layer includes 4,4'-N,N'-dicarbazolyl-biphenyl, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine), N,N'-bis(3 -methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tri(N-carbazolyl)-triphenylamine, 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(N-vinylcarbazole) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4- 4'-diamine, spiro NPB, poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], 1,3-bis(carbazol-9-yl)benzene, polyaniline, polypyrrole, poly(p-)phenylene vinylene, aromatic tertiary amines, polynuclear aromatic tertiary amines , 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, doped graphene, undoped graphene, C60, doped or undoped NiO, doped or undoped MoO3, doped or undoped WO3, doped or undoped V2O5, doped or undoped P-type gallium nitride, doped or undoped CrO3, doped or undoped CuO; and / or The photoelectric device also includes a hole injection layer located between the anode and the light-emitting layer, and the material of the hole injection layer includes one or more of 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, PEDOT, PEDOT:PSS, a derivative of PEDOT:PSS doped with s-MoO3, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, tetracyanoquinodimethane, copper phthalocyanine, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, molybdenum sulfide, tungsten sulfide and copper oxide.

7. A method for preparing a photoelectric device, characterized in that: The steps include: Providing a photovoltaic device preform, the photovoltaic device preform comprising a stacked anode and a light-emitting layer; Providing a material for an electronic functional layer, the material for the electronic functional layer comprising an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the light-emitting layer to obtain the electronic functional layer; Prepare a cathode on the surface of the electronic functional layer away from the anode to obtain a photoelectric device; or, Providing a photovoltaic device preform, wherein the photovoltaic device preform comprises a cathode; Providing a material for an electronic functional layer, the material for the electronic functional layer comprising an electronic functional material and a metal capture agent, and disposing the material for the electronic functional layer on the cathode to obtain the electronic functional layer; A stacked light-emitting layer and an anode are sequentially prepared on the surface of the electronic functional layer away from the cathode to obtain a photoelectric device.

8. The preparation method according to claim 7, characterized in that: The photoelectric device preform further comprises a hole functional layer located between the anode and the light-emitting layer; or The sequentially preparing a stacked light-emitting layer and an anode on a surface of the electronic functional layer away from the cathode comprises: sequentially forming a stacked light-emitting layer, a hole functional layer and an anode on a surface of the electronic functional layer away from the cathode.

9. The preparation method according to claim 7, characterized in that: The method for disposing the material of the electronic functional layer on the light-emitting layer comprises: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion liquid, and disposing the first dispersion liquid on the light-emitting layer; or The method for disposing the material of the electronic functional layer on the cathode comprises: providing the material of the electronic functional layer and a first solvent, mixing them to obtain a first dispersion liquid, and disposing the first dispersion liquid on the cathode.

10. The preparation method according to claim 9, characterized in that: The first solvent comprises one or more of isopropanol, ethanol, dimethyl sulfoxide, N-methylpyrrolidone and chlorobenzene; and / or In the first dispersion, the concentration of the electronic functional material is 10 to 50 mg / ml; and / or In the first dispersion, the mass ratio of the metal capture agent to the electronic functional material is 1 to 10%; and / or In the first dispersion, the mass ratio of the metal capture agent to the electronic functional material is 1-5%; and / or The metal capture agent comprises a nitrogen-containing polymer, wherein the nitrogen-containing polymer comprises one or more of an amine polymer or an ammonium polymer; and / or After the first dispersion liquid is disposed on the light-emitting layer or the first dispersion liquid is disposed on the cathode, an annealing treatment is further included, wherein the annealing treatment is performed at a temperature of 80 to 100° C. and for a time of 10 to 60 minutes.

11. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 6, or the display device comprises the optoelectronic device prepared by the preparation method according to any one of claims 7 to 10.

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