Display device

Abstract

The invention relates to a display device. A display device according to the present disclosure includes: a substrate including a display area and a non-display area; a plurality of transistors and a light emitting device disposed in the display area; the packaging layer is formed in the display area and the non-display area; and a reflective member formed in the non-display area to surround the display area, in which the reflective member includes a retroreflective layer that reflects light incident from the outside to observe a flow of the encapsulation layer.

Description

Technical Field

[0001] The present disclosure relates to a display device, and more particularly, for example but not limited to, to a display device that can minimize a frame size. Background Art

[0002] Recently, the importance of display devices has increased with the development of multimedia. Various display devices such as liquid crystal displays and organic light emitting displays have been proposed.

[0003] Since the display apparatus is applied to small portable electronic devices such as smart phones and tablet PCs, the bezel area should be minimized or eliminated even in a small-area display apparatus to achieve a relatively large screen with an attractive appearance.

[0004] The description provided in this Description of Related Art section should not be assumed to be prior art simply because it is mentioned in or associated with this section. The discussion of the related art section may include information that describes one or more aspects of the subject technology, and the descriptions in this section do not limit the present disclosure. Summary of the invention

[0005] An object of the present invention is to provide a display device including a retroreflective member to observe the flow of an organic material for an encapsulation layer, thereby minimizing the number of dams for blocking the flow of the organic material and reducing the area of ​​a bezel.

[0006] The purpose according to the present disclosure is not limited to the above-mentioned purpose. Other purposes and advantages not mentioned according to the present disclosure can be understood based on the following description, and can be more clearly understood based on the embodiments according to the present disclosure. In addition, it will be easily understood that the purposes and advantages according to the present disclosure can be achieved using the means shown in the claims or their combination.

[0007] In order to achieve the above-mentioned purpose, the display device according to the present disclosure includes: a substrate, which includes a display area and a non-display area; a plurality of transistors and light-emitting devices, which are arranged in the display area; an encapsulation layer, which is formed in the display area and the non-display area; and a reflective member, which is formed in the non-display area to surround the display area, wherein the reflective member includes a retro-reflective layer that reflects light incident from the outside to observe the flow of the encapsulation layer.

[0008] The reflective member may include a metal layer in a three-dimensional concave-convex shape above the gate insulating layer. The gate insulating layer may be etched in a three-dimensional protruding shape, and the reflective member may be formed on the surface of the gate insulating layer. The reflective member may include a plurality of protruding insulating layers disposed on the gate insulating layer and a metal layer located on the plurality of protruding insulating layers.

[0009] The reflective member may be a metal layer of a three-dimensional concave-convex shape on the interlayer insulating layer. The surface of the interlayer insulating layer may be etched into a three-dimensional protruding shape, and the reflective member may be a metal layer formed on the surface of the interlayer insulating layer. The reflective member may include a plurality of protruding insulating layers disposed on the interlayer insulating layer and a metal layer formed on the plurality of protruding insulating layers.

[0010] The metal layer may be formed of a metal having getter properties.

[0011] It is to be understood that both the foregoing general description and the following detailed description of the present disclosure are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The accompanying drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this application. The accompanying drawings illustrate embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the drawings:

[0013] Figure 1 is a schematic block diagram of an organic light emitting display device according to the present disclosure.

[0014] Figure 2 is a schematic block diagram of an organic light emitting display device according to the present disclosure.

[0015] Figure 3 is a circuit diagram conceptually illustrating a sub-pixel of a display device according to the present disclosure.

[0016] Figure 4 is a plan view of a display device according to the present disclosure.

[0017] Figure 5 is a cross-sectional view of a display device according to a first exemplary embodiment of the present disclosure.

[0018] Fig. 6A is a view showing a method of determining the position of an encapsulation layer when forming a reflective member made of a mirror-shaped reflective layer.

[0019] Figure 6B is a view illustrating a method for determining a position of an encapsulation layer when forming a reflective member made of a retroreflective layer according to a first exemplary embodiment of the present disclosure.

[0020] Fig. 7A is a view showing a reflection image captured when a reflection member made of a mirror-shaped reflection layer is formed.

[0021] Figure 7B is a view showing a reflection image captured when a reflection member made of a retroreflective layer is formed.

[0022] Figure 8 yes Figure 5 An enlarged cross-sectional view of the reflective component.

[0023] Fig.9A is an enlarged perspective view specifically showing the structure of the retroreflective layer according to the first exemplary embodiment of the present disclosure.

[0024] Fig. 9B It is shown Fig.9A View of a corner reflector of a retroreflective layer.

[0025] Fig. 10A and Fig. 10B 2 is a view showing a different structure of a reflection member of a display device according to a first exemplary embodiment of the present disclosure.

[0026] Fig.11 is a cross-sectional view of a display device according to a second exemplary embodiment of the present disclosure.

[0027] Throughout the drawings and detailed description, unless otherwise described, the same drawing reference numerals should be understood to refer to the same elements, features, and structures. The relative sizes and depictions of these elements may be exaggerated for clarity, illustration, and convenience. DETAILED DESCRIPTION

[0028] Reference will now be made in detail to embodiments of the present disclosure, examples of which may be illustrated in the accompanying drawings. The described progression of processing steps and / or operations is an example; however, the order of steps and / or operations is not limited to the order set forth herein, and may be varied as is known in the art, except for steps and / or operations that must occur in a particular order. The names of corresponding elements used in the following description may be selected solely for ease of writing the specification, and therefore may differ from the names used in the actual product.

[0029] The advantages and features of the present disclosure and the methods for realizing them will become clear from the embodiments described in detail below with reference to the accompanying drawings. However, the present disclosure can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein, and the embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art to which the present disclosure belongs, and the present disclosure is limited only by the scope of the appended claims.

[0030] The shapes (e.g., size, length, width, height, thickness, position, radius, diameter, and area), ratios, angles, quantities, etc. disclosed in the drawings for describing the embodiments of the present disclosure are illustrative, and therefore the present disclosure is not limited to the matters shown. Throughout the present disclosure, the same reference numerals refer to the same parts. In addition, in the following description of the present disclosure, when it is determined that the detailed description of the known related art is unnecessary to blur the main points of the present disclosure, the detailed description will be omitted or briefly given herein. When using terms such as "including", "having", "including", "containing", "constituting", "made of", "formed of", etc. mentioned in the present disclosure, other parts may be added, unless the term "only" is used herein. When a part is represented as a singular, unless otherwise specified, the plural number is included.

[0031] The word "exemplary" is used to mean serving as an example or illustration. Aspects are example aspects. "Implementations," "examples," "aspects," etc. should not be construed as being preferred or advantageous over other implementations. Unless otherwise specified, implementations, examples, exemplary implementations, aspects, etc. may refer to one or more implementations, one or more examples, one or more example implementations, one or more aspects, etc. In addition, the word "may" encompasses all meanings of the word "may."

[0032] When analyzing components, even when there is no explicit description, it is interpreted as including a margin of error.

[0033] When describing a positional relationship, for example, when the positional relationship of two parts is described as "on", "above", "below", "immediately adjacent", etc., unless "immediately" or "directly" is used, one or more other parts may be located between the two parts. For example, when an element or layer is disposed "on" another element or layer, a third layer or element may be interposed therebetween.

[0034] Terms such as "below," "lower," "above," "upper," etc., may be used herein to describe the relationship between elements or items as shown in the drawings. It should be understood that these terms are spatially relative and based on the orientation depicted in the drawings.

[0035] When describing a temporal relationship, for example, when a temporal precedent relationship is described as “after,” “subsequently,” “next,” “before,” etc., discontinuous cases may also be included unless “immediately” or “directly” is used.

[0036] Although the terms first, second, etc. are used to describe various components, these components are not substantially limited by these terms. These terms are only used to distinguish one component from another component. Therefore, within the technical spirit of the present disclosure, the first component described below can be substantially the second component.

[0037] When describing the components of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only used to distinguish an element from other elements, and the nature, order or number of the elements are not limited by these terms. When describing a component as "coupled" or "connected" to another component, the component may be directly coupled or connected to the other component, but if not specifically stated, the component may be indirectly coupled or connected to the other component. It should be understood that other components may be "interposed" between each component that is or may be coupled.

[0038] As used herein, the term "device" may include display devices such as a liquid crystal module (LCM) including a display panel and a driving unit for driving the display panel, and an organic light emitting display module (OLED module). In addition, the term "device" may also include a notebook computer, a television set, a computer monitor, a vehicle electric device including a device for a vehicle or other types of vehicles, and a mobile electronic device or electronic board such as a smart phone, etc., which is a finished product (complete product or final product) including an LCM and an OLED module, etc.

[0039] Accordingly, the device in the present invention may include the display device itself such as LCM, OLED module, etc., as well as application products including LCM, OLED module, etc., or a complete set of equipment as a terminal user's device.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the example embodiments belong. It will also be understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having, for example, a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein. For example, the term "component" or "unit" may apply, for example, to a separate circuit or structure, an integrated circuit, a computing block of a circuit device, or any structure configured to perform the described function, as will be understood by one of ordinary skill in the art.

[0041] Hereinafter, the present disclosure will be described in detail with reference to the accompanying drawings.

[0042] The present disclosure can be applied to various display devices. For example, the display device of the present disclosure can be applied to various display devices such as organic light-emitting display devices, liquid crystal display devices, electrophoretic display devices, quantum dot display devices, micro-LED (light-emitting device) display devices, and mini-LED display devices. However, in the following description, for ease of explanation, an organic light-emitting display device will be described as an example.

[0043] The features of various embodiments of the present disclosure may be combined with each other in part or in whole, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other, or may be implemented together in an associated relationship.

[0044] Hereinafter, the present disclosure will be described in detail with reference to the accompanying drawings. For the convenience of explanation, the proportions of components shown in the drawings are different from the actual proportions, and therefore are not limited to the proportions shown in the drawings.

[0045] Figure 1 is a schematic block diagram of a sub-pixel of an organic light emitting display device according to the present disclosure, and Figure 2 is a schematic block diagram of a sub-pixel of an organic light emitting display device according to the present disclosure.

[0046] like Figure 1 As shown, the organic light emitting display device 100 includes an image processing unit 102, a timing control unit 104, a gate driving unit 106, a data driving unit 107, a power supply unit 108, a display panel 109, and the like.

[0047] The image processing unit 102 outputs image data provided from the outside and driving signals for driving various devices. For example, the driving signals from the image processing unit 102 may include, for example, a data enable signal, a vertical synchronization signal, a horizontal synchronization signal, and a clock signal from an external device such as a host system.

[0048] The image data and the driving signal are supplied from the image processing unit 102 to the timing control unit 104. The timing control unit 104 writes and outputs a gate timing control signal GDC for controlling the driving timing of the gate driving unit 106 and a data timing control signal DDC for controlling the driving timing of the data driving unit 107 based on the driving signal from the image processing unit 102.

[0049] The gate drive unit 106 outputs a scan signal to the display panel 109 in response to the gate timing control signal GDC provided from the timing control unit 104. The gate drive unit 106 may be a circuit for driving a plurality of gate lines GL1 to GLm, and may provide a scan signal to the plurality of gate lines GL1 to GLm. The gate drive unit 106 outputs a scan signal through the plurality of gate lines GL1 to GLm. In this case, the gate drive unit 106 may be formed in the form of an integrated circuit (IC), but is not limited thereto. The gate drive unit 106 includes various gate drive circuits, and the gate drive circuits may be directly formed on a substrate. In this case, the gate drive unit 106 may be a gate in panel (GIP), but is not limited thereto.

[0050] As another example, the gate driving unit 106 may be configured with at least one gate IC. As an example, the gate driving unit 106 may be connected to the display panel 109, for example, in a tape automated bonding (TAB) method, a chip on glass (COG) method, a chip on panel (COP) method, or a chip on film (COF) method, but is not limited thereto.

[0051] The data driving unit 107 outputs a data voltage to the display panel 109 in response to a data timing control signal DDC input from the timing control unit 104. The data driving unit 107 samples and latches the digital data signal DATA provided from the timing control unit 104 to convert it into an analog data voltage based on the gamma voltage. The data driving unit 107 may be a circuit for driving a plurality of data lines DL1 to DLn, and may provide a data signal to the plurality of data lines DL1 to DLLn. The data driving unit 107 outputs a data voltage through the plurality of data lines DL1 to DLn. In this case, the data driving unit 107 may be mounted on the upper surface of the display panel 109 in the form of an integrated circuit (IC), but is not limited thereto.

[0052] The power supply unit 108 outputs a high potential voltage VDD and a low potential voltage VSS, etc., based on an external input voltage provided from the outside to provide them to the display panel 109. The high potential voltage VDD is provided to the display panel 109 through a first power line EVDD, and the low potential voltage VSS is provided to the display panel 109 through a second power line EVSS. At this time, in addition to the high potential voltage VDD and the low potential voltage VSS, the power supply unit 108 may also generate and output a voltage required for driving the gate driving unit 106, a voltage required for driving the data driving unit 107, and a voltage required for driving the memory, that is, the voltage from the power supply unit 108 is applied to the data driving unit 107 or the gate driving unit 106 to drive them.

[0053] The display panel 109 displays an image based on a data voltage from the data driving unit 107 , a scan signal from the gate driving unit 106 , and power from the power supply unit 108 .

[0054] The display panel 109 includes a plurality of sub-pixels SP to display an image. The sub-pixels SP may include red sub-pixels, green sub-pixels, and blue sub-pixels, but are not limited thereto. In addition, the sub-pixels SP may include white sub-pixels, red sub-pixels, green sub-pixels, and blue sub-pixels, but are not limited thereto. The white sub-pixels, red sub-pixels, green sub-pixels, and blue sub-pixels may be formed in the same region, or may be formed in different regions. The embodiment is not limited thereto. As an example, sub-pixels SP of other colors such as magenta, cyan, or yellow may be included alternatively or additionally, but are not limited thereto. In one or more aspects, the display device may be a liquid crystal display device (LCD), a plasma display device (PDP), a field emission display device (FED), or the like, or a self-luminous display device that emits light from the display panel 109 itself, such as an organic light-emitting display device (OLED) and a micro-LED (micro light-emitting diode) display device. In an example where the display device is a self-luminous display device, each of the plurality of sub-pixels SP may include a light-emitting element.

[0055] like Figure 2 As shown, one sub-pixel SP can be connected to the gate line GL1, the data line DL1, the first power line EVDD and the second power line EVSS. According to the configuration of the pixel circuit, the sub-pixel SP may include a plurality of thin film transistors and storage capacitors. For example, the sub-pixel SP may include two transistors and a capacitor (referred to as 2T1C), but is not limited thereto, and may include more or less elements. The sub-pixel SP may be composed of 3T1C, 4T1C, 5T1C, 6T1C, 7T1C, 3T2C, 4T2C, 5T2C, 6T2C, 7T2C, 8T2C, etc.

[0056] Figure 3 is a circuit diagram illustrating a sub-pixel SP of the organic light emitting display device 100 according to the present disclosure.

[0057] like Figure 3 As shown, the organic light emitting display device 100 according to the present disclosure includes gate lines GL, data lines DL and power lines PL that cross each other to define sub-pixels SP. The sub-pixels SP are provided with switching thin film transistors Ts, driving thin film transistors Td, storage capacitors Cst and light emitting devices D, etc.

[0058] The switching thin film transistor Ts is connected to the gate line GL and the data line DL, specifically, the gate electrode of the switching thin film transistor Ts is connected to the gate line GL, and the drain electrode of the switching thin film transistor Ts is connected to the data line DL, and the driving thin film transistor Td and the storage capacitor Cst are connected between the switching thin film transistor Ts and the power line PL. The light emitting device D is connected to the driving thin film transistor Td.

[0059] In the organic light emitting display device having such a structure, when the switching thin film transistor Ts is turned on according to the gate signal applied to the gate line GL, the data signal applied to the data line DL is applied to the gate of the driving thin film transistor Td and one electrode of the storage capacitor Cst through the switching thin film transistor Ts.

[0060] The driving thin film transistor Td is turned on according to the data signal applied to its gate. As a result, a current proportional to the data signal is supplied from the power line PL through the driving thin film transistor Td to the light emitting device D, and then the light emitting device D emits light at a brightness proportional to the current flowing through the driving thin film transistor Td.

[0061] At this time, the storage capacitor Cst is charged with a voltage proportional to the data signal to keep the gate voltage of the driving thin film transistor Td constant in one frame.

[0062] In the figure, only two thin film transistors Td and Ts and one capacitor Cst are provided, but the present disclosure is not limited thereto. Three or more thin film transistors and two or more capacitors may be provided in the present disclosure.

[0063] Figure 4 is a plan view schematically showing the structure of a display device 100 according to the present disclosure.

[0064] like Figure 4 As shown, the display device 100 according to the present disclosure includes a display area AA for displaying an image and a non-display area NA disposed outside the display area AA.

[0065] The non-display area NA may refer to an area outside the display area AA. Several types of signal lines may be provided in the non-display area NA and may be connected to several types of driving circuits. At least a portion of the non-display area NA may be bent to be invisible from the front surface of the display device 100, or may be covered by a housing or casing (not shown) of the display device 100. The non-display area NA may also be referred to as an edge area or a frame area.

[0066] A plurality of pixels P are arranged in the display area AA, and each pixel P includes a plurality of sub-pixels SP. At this time, the sub-pixel SP may be a red (R) sub-pixel, a green (G) sub-pixel, or a blue (B) sub-pixel, but is not limited thereto. In addition, the sub-pixel SP may be a white (W) sub-pixel.

[0067] Although not shown in the figure, a plurality of gate lines and data lines are arranged in the display area AA, and sub-pixels SP are disposed at intersections of the gate lines and data lines. In each sub-pixel SP, a thin film transistor as a switching element and a display device for displaying an image are disposed.

[0068] The display device may include various display devices. For example, the display device may be an organic light emitting display device, a liquid crystal display device, a quantum dot display device, a micro LED display device, or a mini LED display device.

[0069] A gate driving unit and a data driving unit applying various signals to the subpixels SP may be disposed in the non-display area NA. The gate driving unit applies a scan signal to the subpixels SP through a gate line, and the data driving unit applies an image signal to the subpixels SP through a data line.

[0070] A dam DAM is formed around the display area AA in the non-display area NA. When the thin film transistor or the organic light-emitting layer of the display device 100 is exposed to external impurities such as air or moisture, the thin film transistor or the organic light-emitting layer deteriorates and the display device 100 is defective. Therefore, it is necessary to form an encapsulation layer (not shown) in the display device 100 to seal the display device 100 from the external environment. As will be explained later, when the encapsulation material is applied to form the encapsulation layer, a dam DAM is formed in the non-display area NA to block the flow of the encapsulation material, thereby preventing the encapsulation material from flowing to the outside of the display device 100. The encapsulation layer may include an inorganic insulating material and / or an organic encapsulation layer. For example, the inorganic encapsulation layer may include an inorganic insulating material capable of low temperature deposition, such as silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON) and aluminum oxide (AlO). For example, the organic encapsulation layer may include an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene and silicon oxycarbide (SiOC).

[0071] In a general display device, a plurality of dams DAM are provided to surround the outside of the display area AA to reliably prevent the encapsulation material from flowing out. The reason for forming the plurality of dams DAM is as follows.

[0072] If the encapsulation layer is not formed with a uniform thickness in the entire area of ​​the display device 100, the image quality deteriorates due to light refraction at the interface of the encapsulation layer. When the encapsulation material is distributed and diffused in the entire area of ​​the display device 100, if the diffusion speed is uneven, the encapsulation material is not formed with a uniform thickness. That is, when the encapsulation material diffuses in all directions of the display device 100, the encapsulation material diffuses at different speeds according to the direction, so that an amount of encapsulation material greater than a set amount is applied to certain areas and an amount of encapsulation material less than a set amount is applied to other areas. As a result, the cured encapsulation layer is formed with an uneven thickness.

[0073] Deterioration of image quality occurs particularly when the encapsulation layer is formed with a thickness less than a set thickness. Therefore, in order to form the entire encapsulation layer with a thickness greater than the set thickness in a general display device, it is necessary to distribute an amount of encapsulation material greater than the set amount in consideration of the difference in diffusion speed. In addition, a plurality of dams DAM must be formed in the non-display area to reliably block the encapsulation material exceeding the set amount from diffusing to the outside.

[0074] In the present disclosure, since the diffusion speed of the encapsulation material in the entire display device 100 is uniform, even in the case of a relatively small amount of encapsulation material, an encapsulation layer of uniform thickness can be formed over the entire area of ​​the display device 100. In particular, in the present disclosure, since the encapsulation material is applied while observing the actual flow state of the encapsulation material diffusing in the display device 100, an encapsulation layer of uniform thickness can be formed using a relatively small amount of encapsulation material. Therefore, the encapsulation material can be prevented from overflowing to the outside of the display device 100 by only one dam DAM, thereby minimizing the area of ​​the non-display area NA, that is, the area of ​​the frame.

[0075] In the present disclosure, the reflective member RRL may be disposed in one or more of the non-display area NA and the display area AA, but is not limited thereto. As an example, the reflective member RRL may be disposed in the non-display area NA. For example, the reflective member RRL is disposed in the non-display area NA inside the dam DAM, that is, the area between the display area AA and the dam DAM, to observe the diffusion of the encapsulation material therein. As will be described in detail later, the reflective member RRL indicates the presence or absence of the encapsulation layer due to the brightness difference caused by the reflection of external light in the area where the encapsulation layer is formed and the area where the encapsulation layer is not formed, but is not limited thereto. In addition, the position of the encapsulation layer can be determined by photographing the reflected light with a camera, or the operator can determine the position of the encapsulation layer by visually inspecting the reflected light.

[0076] In the figure, the reflective member RRL is formed in the non-display area NA along the periphery of the display area AA. However, since the diffusion speed of the encapsulation material needs to be observed in both the display area AA and the non-display area NA, the reflective member RRL may be formed in the display area AA, and may be formed from the non-display area NA to the display area AA. In addition, the reflective member RRL serves as a diffusion path for the coated encapsulation material, so that the encapsulation material can diffuse at a uniform speed in the corresponding area.

[0077] As described above, in the present disclosure, by providing the reflective member RRL, the diffusion speed of the encapsulation material may be uniform, and the diffusion state of the encapsulation material may be observed in real time, which will be described in more detail below.

[0078] Figure 5 is a cross-sectional view showing a structure of a sub-pixel of a display device 100 according to a first exemplary embodiment of the present disclosure, which is taken along Figure 4 1-1'. At this time, for the convenience of explanation, the figure shows the display area AA and the non-display area NA. In fact, a plurality of thin film transistors and various circuits are arranged in the display area AA and the non-display area NA, but for the convenience of explanation, only the thin film transistors arranged in the display area AA are shown in the figure.

[0079] like Figure 5 As shown, the substrate 140 includes a display area AA and a non-display area NA disposed outside the display area AA. For example, a plurality of transistors and light-emitting devices may be disposed in the display area AA. The substrate 140 may be made of a hard material such as glass or a flexible plastic-based material, but is not limited thereto. In addition, the substrate 140 may be made of a flexible polymer film.

[0080] In the case where the substrate is made of a flexible polymer film, the substrate may be made of at least one of the following materials: polyethylene terephthalate (PET), polycarbonate (PC), acrylonitrile butadiene styrene copolymer (ABS), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyether sulfone (PES), cyclic olefin copolymer (COC), triacetyl cellulose (TAC) film, polyvinyl alcohol (PVA) film, polyimide (PI) film, and polystyrene (PS), but is not limited thereto.

[0081] In the case where the substrate is made of a flexible plastic-based material, the substrate may be made of at least one material of polyimide, polymethyl methacrylate, polyethylene terephthalate, polyethersulfone, and polycarbonate, but is not limited thereto.

[0082] When the substrate 140 is made of polyimide, the substrate 140 may be made of a plurality of polyimide layers, and an inorganic layer may be further disposed between the polyimide layers, but is not limited thereto.

[0083] The buffer layer 142 may be formed over the substrate 140 to enhance adhesion between the substrate 140 and the layers thereon. In addition, the buffer layer 142 may block various types of defects such as alkali components flowing out of the substrate 140. In addition, the buffer layer 142 may delay diffusion of moisture or oxygen penetrating into the substrate 140.

[0084] The buffer layer 142 may be a single layer or a multilayer thereof made of silicon oxide (SiOx) or silicon nitride (SiNx). When the buffer layer 142 is made of a multilayer, SiOx and SiNx may be alternately formed. The buffer layer 142 may be omitted based on the type and material of the substrate 140, the structure and type of the thin film transistor, etc.

[0085] A thin film transistor T is formed on the buffer layer 142 in the display area AA, but is not limited thereto. In the case where the buffer layer 142 is omitted, the thin film transistor T may be formed on the substrate 140 in the display area AA. For ease of description, only a driving thin film transistor among various thin film transistors that may be provided in the display area AA is shown, but other thin film transistors such as a switching thin film transistor may also be included. In the figure, a thin film transistor of a top gate structure is shown, but the thin film transistor is not limited to this structure and may be formed into other structures, such as a thin film transistor of a bottom gate structure.

[0086] The thin film transistor T may include a semiconductor pattern 112 disposed on the buffer layer 142, a gate insulating layer 144 covering the semiconductor pattern 112, a gate 113 located on the gate insulating layer 144, an interlayer insulating layer 146 covering the gate 113, and a source electrode 115 and a drain electrode 116 located on the interlayer insulating layer 146, but is not limited thereto. Alternatively, in the case where the buffer layer 142 is omitted, the semiconductor pattern 112 may be disposed on the substrate 140.

[0087] The semiconductor pattern 112 may be made of a polycrystalline semiconductor. For example, the polycrystalline semiconductor may be made of low temperature polysilicon (LTPS) having high mobility, but is not limited thereto.

[0088] The semiconductor pattern 112 may be made of an oxide semiconductor. For example, the semiconductor pattern 112 may be made of one of IGZO (Indium Gallium Zinc Oxide), IZO (Indium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), and IGO (Indium Gallium Oxide), but is not limited thereto. The semiconductor pattern 112 includes a channel region 112a located in a central region and a source region 112b and a drain region 112c as doping layers located on both sides of the channel region 112a.

[0089] The gate insulating layer 144 may be formed in the display area AA and the non-display area NA, or may be formed only in the display area AA, but is not limited thereto. The gate insulating layer 144 may be composed of a single layer or multiple layers made of an inorganic material such as SiOx or SiNx, but is not limited thereto.

[0090] The gate 113 may be formed of a conductive material. For example, the gate 113 may be made of a metal. For example, the gate 113 may be formed of a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), but is not limited thereto.

[0091] The interlayer insulating layer 146 may be made of an organic material such as photo acrylic, or the interlayer insulating layer 146 may be formed of a single layer or multiple layers made of an inorganic material such as SiOx or SiNx, but is not limited thereto. In addition, the interlayer insulating layer 146 may be formed of multiple layers of an organic material layer and an inorganic material layer, but is not limited thereto.

[0092] The source electrode 115 and the drain electrode 116 may be formed of a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), but are not limited thereto. The source electrode 115 and the drain electrode 116 may be in contact with the source region 112b and the drain region 112c of the semiconductor, respectively. For example, the source electrode 115 and the drain electrode 116 may be in contact with the source region 112b and the drain region 112c of the semiconductor, respectively, through contact holes formed in the gate insulating layer 144 and the interlayer insulating layer 146, but are not limited thereto.

[0093] Although not shown in the figure, a bottom shielding metal layer may be disposed on the substrate 140 below the semiconductor pattern 112. The bottom shielding metal layer minimizes a back channel phenomenon caused by charges trapped in the substrate 140 to prevent residual image or degradation of transistor performance. The bottom shielding metal layer may be composed of a single layer or multiple layers made of titanium (Ti), molybdenum (Mo) or an alloy thereof, but is not limited thereto.

[0094] A planarization layer 148 is formed on the substrate provided with the thin film transistor T. The planarization layer 148 may be configured to protect the thin film transistor T and planarize a step caused by the thin film transistor T. The planarization layer 148 may be formed of an organic material such as photo acrylic, but is not limited thereto. The planarization layer 148 may include a multilayer including an inorganic layer and an organic layer.

[0095] The light emitting device D is disposed on the planarization layer 148 in the display area AA. The light emitting device D includes a first electrode 132, a light emitting layer 134, and a second electrode 136, but is not limited thereto. The first electrode 132 may be an anode, and the second electrode 136 may be a cathode, but is not limited thereto.

[0096] The first electrode 132 is disposed on the planarization layer 148 and is electrically connected to the drain electrode 116 of the thin film transistor T through a contact hole formed in the planarization layer 148. The first electrode 132 may be formed of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof, but is not limited thereto. In addition, the first electrode 132 may be formed of a transparent metal oxide material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0097] When the display device 100 is a top-emitting display device, the first electrode 132 may further include an opaque conductive material layer to serve as a reflective electrode for reflecting light, but is not limited thereto. When the display device 100 is a bottom-emitting display device, the first electrode 132 may be made of a transparent conductive material such as ITO or IZO, but is not limited thereto.

[0098] A bank layer BNK is formed on the planarization layer 148 at the boundary between the sub-pixels. The bank layer BNK may be a barrier wall for defining the sub-pixels. The bank layer BNK divides each sub-pixel to prevent light of a specific color output from an adjacent pixel from being mixed and output. In addition, the bank layer BNK may include a black dye to absorb light incident from the outside.

[0099] The bank layer BNK is made of at least one of an inorganic insulating material such as SiNx or SiOx, an organic insulating material such as benzocyclobutene, acrylic resin, epoxy resin, phenolic resin, polyamide resin, or a photosensitizer including a black pigment, but is not limited thereto.

[0100] The light emitting layer 134 is formed on the upper surface of the first electrode 132 , on the inclined surface of the bank layer BNK, or on a partial region of the upper surface of the bank layer BNK.

[0101] The light emitting layer 134 may be formed in a plurality of sub-pixels. The light emitting layer 134 may be implemented to emit light of the same color, such as white light, for each pixel, or to emit light of different colors such as red, green, or blue (e.g., white, red, green, or blue, or cyan, magenta, or yellow, etc.) for each pixel. For example, the light emitting layer 134 may be formed in R, G, and B sub-pixels, and may include an R light emitting layer for emitting red light, a G light emitting layer for emitting green light, and a B light emitting layer for emitting blue light. For example, the light emitting layer 134 may include an organic light emitting layer, an inorganic light emitting layer, a nano-sized material layer, a quantum dot layer, a micro-LED light emitting layer, or a mini-LED light emitting layer, but is not limited thereto.

[0102] The light-emitting layer 134 may further include an electron injection layer for injecting electrons into the light-emitting layer, a hole injection layer for injecting holes into the light-emitting layer, an electron transport layer for transporting the injected electrons to the light-emitting layer, a hole transport layer for transporting the injected holes to the light-emitting layer, an electron blocking layer, and a hole blocking layer, but is not limited thereto.

[0103] The second electrode 136 is disposed on the light emitting layer 134 and may be formed of a single layer or multiple layers made of metal or its alloy, but is not limited thereto. In addition, the second electrode 136 may be made of a transparent metal oxide material such as ITO or IZO, but is not limited thereto.

[0104] When the display device 100 is a top emission type, the second electrode 136 may be made of a semi-transparent conductive material that transmits light, but is not limited thereto. For example, the second electrode 136 may be made of at least one or more of alloys such as LiF / Al, CsF / Al, Mg:Ag, Ca / Ag, Ca:Ag, LiF / Mg:Ag, LiF / Ca / Ag, or LiF / Ca:Ag, but is not limited thereto.

[0105] When the display device 100 is a bottom emission type, the second electrode 136 may be a reflective electrode made of an opaque conductive material, but is not limited thereto. For example, the second electrode 188 may be made of at least one or more of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0106] In addition, the light-emitting device D can be formed into a series structure. The series structure may include a plurality of organic light-emitting layers and a charge generation layer disposed between the organic light-emitting layers. The charge generation layer is configured to adjust the charge balance between the plurality of organic light-emitting layers, and may be formed of a plurality of layers including a first charge generation layer and a second charge generation layer. The charge generation layer may include an N-type charge generation layer and a P-type charge generation layer. In this case, the charge generation layer may be formed of an organic layer doped with an alkali metal (e.g., Li, Na, K, or Cs) or an alkaline earth metal (e.g., Mg, Sr, Ba, or Ra), but is not limited thereto.

[0107] The encapsulation layer 180 is formed in the display area AA and the non-display area NA to seal the light emitting device (D). When the light emitting device D is exposed to impurities such as moisture or oxygen, a pixel shrinkage phenomenon in which the light emitting area is reduced or defects such as dark spots in the light emitting area may occur. In addition, moisture or oxygen that penetrates into the light emitting device D oxidizes the metal electrode. The encapsulation layer 180 blocks impurities such as oxygen and moisture from the outside to prevent defects of the light emitting device D and various electrodes. When the encapsulation material is applied to form the encapsulation layer, a dam DAM is formed in the non-display area NA to block the flow of the encapsulation material, thereby preventing the encapsulation material from flowing to the outside of the display device 100.

[0108] The encapsulation layer 180 may be formed of a first encapsulation layer 182, a second encapsulation layer 184, and a third encapsulation layer 186, but is not limited thereto. For example, the first encapsulation layer 182 may be disposed on the substrate 140 on which the light emitting device D is disposed. The first encapsulation layer 182 and the third encapsulation layer 186 may extend from the display area AA to the end of the non-display area NA, beyond the dam DAM, and the second encapsulation layer 184 may extend from the display area AA to the dam DAM in the non-display area NA, and the second encapsulation layer 184 is not formed in the outer area of ​​the dam DAM, but is not limited thereto. The encapsulation layer 180 may be formed of two layers having an organic layer and an inorganic layer or four or more layers having an organic layer and an inorganic layer, but is not limited thereto.

[0109] The first encapsulation layer 182 and the third encapsulation layer 186 may be made of an inorganic material such as SiOx or SiNx, but are not limited thereto. The second encapsulation layer 184 may be made of an organic insulating material such as acrylic resin, epoxy resin, polyimide, polyethylene, or silicon oxycarbide (SiOC), but are not limited thereto. In addition, the third encapsulation layer 186 may be made of a thin metal (surface sealing metal), but are not limited thereto.

[0110] Although not shown in the figure, the touch member may be provided on the encapsulation layer 180. The touch member may detect external touch information using a user's finger or a touch pen. As an example, the touch member may include at least one touch sensor and a touch sensing circuit capable of detecting the occurrence of a touch event by a touch object (such as a finger, a pen, etc.), or detecting a corresponding touch position (or touch coordinates) by sensing the touch sensor, etc.

[0111] A dam DAM is formed in the non-display area NA. The dam DAM is formed in the non-display area NA in a closed curve shape to surround the display area AA. When the insulating material having fluidity is applied to form the second encapsulation layer 184, the insulating material flowing out of the display device 100 is blocked by the dam DAM. Figure 5 As shown, the second encapsulation layer 184 may extend from the display area AA to the dam DAM in the non-display area NA, and is not formed in an outer region of the dam DAM.

[0112] Dams can be made of various materials. Figure 5 As shown, the dam DAM may be formed of three layers, but is not limited thereto. For example, the dam DAM may include a first layer 146a, a second layer 148a, and a third layer 150a. For example, the second layer 148a may be disposed on the first layer 146a, and the third layer 150a may be disposed on the second layer 148a. At this time, the first layer 146a may be formed of the same material as the interlayer insulating layer 146 in the same process, and the second layer 148a may be formed of the same material as the planarization layer 148 in the same process, but is not limited thereto. In addition, the third layer 150a may be formed of the same material as the bank layer BNK in the same process, but is not limited thereto.

[0113] In addition, the dam may be formed of two layers. At this time, the first layer and the second layer may be formed of layers corresponding to the planarization layer 148 and the bank layer BNK, respectively, and the first layer and the second layer may be formed of layers corresponding to the interlayer insulating layer 146 and the bank layer BNK, respectively. In addition, the first layer and the second layer may be formed of layers corresponding to the interlayer insulating layer 146 and the planarization layer 148, respectively. In addition, the dam DAM may be formed of a layer made of a material different from that of the layer in the display area AA.

[0114] The first encapsulation layer 182 and the third encapsulation layer 186 of the encapsulation layer 180 may extend from the display area AA to the end of the non-display area NA, beyond the dam DAM. For example, the first encapsulation layer 182 and the third encapsulation layer 186 may be formed on both sides and the top surface of the dam DAM. However, it is not limited thereto, and the first encapsulation layer 182 and the third encapsulation layer 186 may be formed only up to the dam DAM. The second encapsulation layer 184 made of an organic material extends from the display area AA to the dam DAM in the non-display area NA, and is not formed in the outer area of ​​the dam DAM. That is, the second encapsulation layer 184 made of an organic material that flows out of the display device 100 is blocked by the dam DAM.

[0115] The reflective member RRL may be disposed in the non-display area NA to observe diffusion of the encapsulation material therein. When the organic material is coated to form the second encapsulation layer 184, the reflective member RRL indicates the position of the organic material on the reflective member RRL to the operator and then displays the coating process of the organic material in real time.

[0116] The reflective member RRL may be a retroreflective layer that reflects light incident from the outside in its original direction without diffuse reflection or specular reflection. The retroreflective layer is formed of a three-dimensional concave-convex reflective layer, so the incident light is reflected by the reflective layer and then output along the incident path.

[0117] If a general reflection layer is used instead of a retroreflection layer as the reflection member RRL, the position of the encapsulation layer 180 cannot be determined. Hereinafter, the reason for forming the retroreflection layer as the reflection member RRL and the principle of determining the position of the encapsulation layer 180 by the retroreflection layer will be explained in detail.

[0118] Fig. 6A is a view showing the position of the encapsulation layer 180 in the case where the reflective member RL is a mirror-shaped reflective layer, and Figure 6B 1 is a view showing the position of the encapsulation layer 180 in the case where the reflective member RRL is a retroreflective layer according to the present disclosure. At this time, the figure illustrates the position of the second encapsulation layer 184 made of an organic material, but is not limited thereto. In addition, for ease of explanation, in the drawings, other components such as the substrate 140, the thin film transistor T or the light emitting device D are omitted, and only the reflective members RL and RRL and the second encapsulation layer 184 are shown.

[0119] like Fig. 6A As shown, when the organic material is dispensed on the substrate 140 on which the light emitting device D is disposed to form the second encapsulation layer 184, the organic material 184a diffuses from the dispensed area to the outside of the substrate 140. At this time, area A is an area where the organic material 184a is not coated, and area B is an area where the organic material 184a is coated.

[0120] When the reflective member RL is a mirror-shaped reflective layer, light incident from the outside is reflected and output by the reflective member RL in the region A and the region B. At this time, since the reflective member RL is a mirror-shaped reflective layer, the light reflected from the reflective member RL is diffusely reflected. In addition, part of the light incident on the region B is absorbed by the organic material 184a and partly refracted at the interface, and the light reflected and output from the reflective member RL is also absorbed by the organic material 184a and partly refracted at the interface.

[0121] In other words, Fig. 6A As shown, light incident from the outside is diffusely reflected on the surface of the reflective member RL and refracted at the interface of the organic material 184a, so that the light output from the region A and the region B is all mixed without directionality. Therefore, there is almost no brightness difference between the light output from the region A and the region B, so the boundary between the region A and the region B cannot be determined, and thus the position of the organic material 184a cannot be determined.

[0122] Fig. 7A It is an image of light output when the reflective member RL is formed of a mirror-shaped reflective layer. Fig. 7A As shown, in this case, there is almost no brightness difference between region A and region B, so the boundary between region A and region B cannot be determined, and thus the position of the organic material 184a cannot be determined.

[0123] like Figure 6B As shown, when the reflective member RRL is formed of a retroreflective layer, light incident from the outside is reflected and output by the reflective member RRL in regions A and B. At this time, since the reflective member RRL is a retroreflective layer, light reflected from the reflective member RRL in region A is output along the original path.

[0124] On the other hand, part of the light incident on the region B is absorbed by the organic material 184a and another part is refracted at the interface, and part of the light reflected and output from the reflective member RRL is also absorbed by the organic material 184a and another part is refracted at the interface.

[0125] In region A, since the incident light is output as it is, the brightness of the output light is not reduced. On the other hand, in region B, since the light is absorbed and refracted by the organic material 184a, the brightness of the output light is much lower than the brightness of the incident light. Therefore, there is a brightness difference between the light output from region A and region B, so the boundary between region A and region B can be determined, and thus the position of the organic material 184a can be determined.

[0126] like Figure 7BAs shown, since the brightness of region B is lower than that of region A, the boundary between region A and region B is clearly visible, so that the position of the organic material 184a forming the second encapsulation layer 184 can be identified. Therefore, it can be determined in real time whether the second encapsulation layer 184 is a good product or a defective product.

[0127] For example, the reflective member RRL indicates the presence or absence of the organic material 184 a due to a brightness difference caused by reflection of external light in a region where the organic material 184 a is formed and a region where the organic material 184 a is not formed, but is not limited thereto.

[0128] Furthermore, the position of the organic material 184a may be determined by photographing the reflected light with a camera, or an operator may determine the position of the organic material 184a by visually checking the reflected light.

[0129] The reflective member RRL may be formed in various shapes. Figure 8 yes Figure 5 An enlarged cross-sectional view of the reflective member RRL.

[0130] like Figure 8 As shown, the reflective member RRL may be made of a concave-convex metal layer. At this time, the metal layer may be made of a metal with good reflectivity. In particular, the metal layer may be made of a metal having a getter property. For example, the metal layer may be made of at least one material selected from the group consisting of Al, Mg, rare earth metals, and Ti, but is not limited thereto.

[0131] Fig.9A is a view showing a specific structure of a reflecting member RRL formed of a plurality of corner reflectors according to the present disclosure, and Fig. 9B is a view showing a corner reflector.

[0132] like Fig.9A As shown, the reflective member RRL of the display device 100 according to the present disclosure may be composed of a plurality of corner reflectors (such as Fig. 9B At this time, each corner reflector is constructed by combining three reflectors at an angle of 90 degrees in three dimensions. When the incident light passes through three consecutive reflections in the reflector, the final reflection direction is the same as the first incident direction. That is, the light reflected from the reflective member RRL is output as is along the original path.

[0133] However, the reflective member (RRL) of the present disclosure is not limited to these corner reflectors. The reflective member RRL of the present disclosure may be formed of a plurality of semicircular mirrors reflecting incident light in a first incident direction, or may be formed of a plurality of glass beads whose light-reflecting surfaces are coated with glass.

[0134] In addition, the corners of the corner reflectors of the reflective member RRL can form a flow path for the organic material. In other words, the corner reflector formed by the three reflectors is formed with a concave portion, and when the diffused organic material 184a fills the concave interior and then overflows, the overflowed organic material 184a flows along the corner of the corner reflector to the concave portions of the adjacent corner reflectors in all directions. In addition, the reflective member RRL serves as a diffusion path for the organic material 184a, so that the organic material 184a can diffuse at a uniform speed in the corresponding area.

[0135] In this manner, by forming a flow path of the organic material 184 a at the corner of the corner reflector, diffusion of the organic material 184 a may be improved, so that the second encapsulation layer 184 may be quickly formed with a uniform thickness.

[0136] As described above, the display device according to the present disclosure may achieve the following effects by providing the reflective member RRL.

[0137] First, in the present disclosure, a reflective member RRL formed of a retroreflective layer is disposed in the non-display area NA to detect light reflected from the reflective member RRL, so that the position of the organic material forming the second encapsulation layer 184 can be accurately determined. Therefore, it can be determined in real time whether the second encapsulation layer 184 is a good product or a defective product.

[0138] Secondly, in the present disclosure, the corners of the multiple corner reflectors of the reflective member RRL form a path for the organic material 184a to diffuse, so that the diffusion speed of the organic material 184a can be uniform. Therefore, since a uniform thickness of the encapsulation layer can be formed in the entire display device 100 even with a small amount of encapsulation material, a single dam DAM can prevent the encapsulation material from overflowing to the outside of the display device 100, thereby minimizing the area of ​​the non-display area NA, that is, the area of ​​the frame.

[0139] Again, in the present disclosure, a reflective member RRL made of metal is disposed in the non-display area NA to block impurities such as moisture or oxygen from penetrating from the outside, thereby preventing defects caused by impurities. In addition, in the present disclosure, since the reflective member RRL is made of a metal having a getter property, moisture penetration can be more efficiently prevented.

[0140] Fig. 10A and Fig. 10B 2 is an enlarged cross-sectional view illustrating a different structure of the reflective member RRL of the display device 100 according to the first exemplary embodiment of the present disclosure.

[0141] like Fig. 10A As shown, the reflective member RRL may be formed of two layers, and as Fig. 10B As shown, the reflective member RRL may be formed of one layer, but is not limited thereto.

[0142] like Fig. 10A As shown, the reflective member RRL may be formed of a first layer 152 disposed on the gate insulating layer 144 and a second layer 154 formed on the first layer 152. At this time, the first layer 152 is a protruding layer made of an inorganic material or an organic material, and a plurality of layers form a three-dimensional concave-convex shape. The second layer 154 may be a metal layer having a getter component such as Al, Mg, a rare earth metal, or Ti formed on the first layer 152 to a predetermined thickness, but is not limited thereto. Fig. 10A As shown, the surface of the gate insulating layer 144 is flat, but is not limited thereto.

[0143] like Fig. 10B As shown, the surface of the gate insulating layer 144 is etched into a three-dimensional concavo-convex shape, and a metal having a getter component such as Al, Mg, a rare earth metal, and Ti is deposited thereon to form the reflective member RRL.

[0144] Fig.11 is a cross-sectional view showing a display device 200 according to a second exemplary embodiment of the present disclosure. Figure 5 The same structures as in the description will be omitted, and only other structures will be described in detail.

[0145] like Fig.11 As shown, the thin film transistor T and the light emitting device D are disposed in the display area AA of the substrate 240, and the dam DAM is disposed in the non-display area NA.

[0146] The thin film transistor T may include a semiconductor layer 212 disposed on a buffer layer 242, a gate 214 disposed on a gate insulating layer 244, and a source 215 and a drain 216 disposed on an interlayer insulating layer 246. In addition, the buffer layer 242 may be omitted based on the type and material of the substrate, the structure and type of the thin film transistor, etc.

[0147] The light emitting device D may include, but is not limited to, a first electrode 232, a light emitting layer 234, and a second electrode 236. The first electrode 232 may be an anode, and the second electrode 236 may be a cathode, but is not limited thereto.

[0148] The first electrode 232 may be made of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr) or an alloy thereof, but is not limited thereto. In addition, the first electrode 232 may be made of a transparent metal oxide material layer, such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto.

[0149] The second electrode 236 may be made of a semi-transparent alloy such as LiF / Al, CsF / Al, Mg:Ag, Ca / Ag, Ca:Ag, LiF / Mg:Ag, LiF / Ca / Ag, and LiF / Ca:Ag, or a metal such as silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), and chromium (Cr). In addition, the second electrode 236 may be made of a transparent metal oxide such as ITO or IZO that transmits light.

[0150] The encapsulation layer 280 is formed in the display area AA and the non-display area NA to seal the light emitting device D. The encapsulation layer 280 including a first encapsulation layer 282 made of an inorganic material, a second encapsulation layer 284 made of an organic material, and a third encapsulation layer 286 made of an inorganic material is disposed over the light emitting device D, but is not limited thereto. For example, the first encapsulation layer 282 may be disposed on the substrate 240 on which the light emitting device D is disposed.

[0151] The dam DAM is formed in the non-display area NA. The dam DAM may be formed of two layers. For example, the dam DAM is formed of a first layer 248a and a second layer 250a to prevent the organic material from overflowing the display device 200 when the second encapsulation layer 284 is formed. For example, the second layer 250a may be disposed on the first layer 248a. At this time, the first layer 248a may be made of the same material as the planarization layer 248 in the same process, and the second layer 250a may be made of the same material as the bank layer BNK in the same process, but is not limited thereto.

[0152] The reflective member RRL may be formed in the non-display area NA along the periphery of the display area AA. Specifically, the reflective member RRL formed of the three-dimensional retroreflective layer is disposed inside the dam DAM in the non-display area NA, so that the flow of the organic material applied during the formation process of the second encapsulation layer 284 can be observed in real time to prevent over-coating or under-coating of the organic material. In addition, the reflective member RRL is formed of a three-dimensional protruding shape so that the organic material is smoothly coated on the entire surface.

[0153] The reflective member RRL may be a concave-convex metal layer formed on the planarization layer 248. At this time, the metal layer may be made of a metal having good reflectivity. At this time, the metal layer may be made of a metal having a getter property such as Al, Mg, a rare earth metal, or Ti, but is not limited thereto.

[0154] like Fig. 10A and Fig.11 As shown, the reflective member RRL may be formed of a protrusion formed on the interlayer insulating layer 246 and a metal layer formed on the protrusion. Fig. 10B and Fig.11As shown, the reflective member RRL may be manufactured by etching the surface of the interlayer insulating layer 246 into a concavo-convex shape and forming a metal layer thereon.

[0155] The above description and drawings are only an illustration of the technical spirit of the present disclosure, and a person of ordinary skill in the art to which the present disclosure belongs can combine the configurations within the scope of the basic features of the present disclosure, and various modifications or changes such as separation, replacement and change will be possible. Therefore, the embodiments disclosed in the present disclosure are not intended to limit the technical spirit of the present disclosure, but are intended to be explained, and the scope of the technical spirit of the present disclosure is not limited by these embodiments. Therefore, the scope of the present disclosure is defined by the attached claims, and all changes or modifications derived from the meaning, scope and equivalent concepts of the claims are intended to fall within the scope of the present disclosure.

[0156] CROSS-REFERENCE TO RELATED APPLICATIONS

[0157] The present invention claims the benefit of and priority to Korean Patent Application No. 10-2023-0138713, filed on October 17, 2023, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein.

Claims

1. A display device, comprising: A substrate, the substrate comprising a display area and a non-display area; a plurality of transistors and light emitting devices, wherein the plurality of transistors and the light emitting devices are arranged in the display area; an encapsulation layer, the encapsulation layer being formed in the display area and the non-display area; as well as a reflective member formed in the non-display area to surround the display area, The reflective member includes a retroreflective layer that reflects light incident from the outside to observe the flow of the encapsulation layer.

2. The display device according to claim 1, wherein: The transistor comprises: a semiconductor layer, the semiconductor layer being located above the substrate; a gate insulating layer, wherein the gate insulating layer is located on the semiconductor layer; A gate, the gate being located on the gate insulating layer; an interlayer insulating layer, the interlayer insulating layer being located on the gate; and A source electrode and a drain electrode are located on the interlayer insulating layer.

3. The display device according to claim 2, wherein: The reflective member includes a metal layer in a three-dimensional concavo-convex shape over the gate insulating layer.

4. The display device according to claim 3, wherein: The surface of the gate insulating layer is etched into a three-dimensional protruding shape, and the reflective member is the metal layer formed on the surface of the gate insulating layer.

5. The display device according to claim 2, wherein: The reflective member comprises: a plurality of protruding insulating layers, the plurality of protruding insulating layers being disposed on the gate insulating layer; and A metal layer is located on the plurality of protruding insulating layers.

6. The display device according to claim 2, wherein: The reflective member is a metal layer having a three-dimensional concavo-convex shape on the interlayer insulating layer.

7. The display device according to claim 6, wherein: The surface of the interlayer insulating layer is etched into a three-dimensional protruding shape, and the reflective member is the metal layer formed on the surface of the interlayer insulating layer.

8. The display device according to claim 2, wherein: The reflective member comprises: a plurality of protruding insulating layers disposed on the interlayer insulating layer; and A metal layer is formed on the plurality of protruding insulating layers.

9. The display device according to any one of claims 3 to 8, wherein: The metal layer is formed of a metal having getter properties.

10. The display device according to claim 9, wherein: The metal layer is made of at least one material selected from the group consisting of Al, Mg, rare earth metals, and Ti. 11 . The display device according to claim 2 , further comprising a dam disposed in the non-display area.

12. The display device according to claim 11, wherein: The reflective member is disposed between the display area and the dam.

13. The display device according to claim 11, wherein: The dam comprises: a first layer, the first layer being disposed on the gate insulating layer; a second layer disposed on the first layer; and A third layer is disposed on the second layer.

14. The display device according to claim 11, wherein: The dam comprises: a first layer disposed on the interlayer insulating layer; and A second layer is disposed on the first layer.

15. The display device according to claim 12, wherein: The reflective member extends to the display area.

16. The display device according to claim 11, wherein: The reflecting member includes a plurality of corner reflectors formed by combining three reflecting mirrors at an angle of 90 degrees in three dimensions.

17. A display device, comprising: A substrate, the substrate comprising a display area and a non-display area; a plurality of transistors and light emitting devices, wherein the plurality of transistors and the light emitting devices are arranged in the display area; an encapsulation layer, the encapsulation layer being formed in the display area and the non-display area; as well as a reflective member formed in the non-display area to surround the display area, The reflective member includes a plurality of corner reflectors formed by combining three reflectors at an angle of 90 degrees in three dimensions.

18. The display device according to claim 17, wherein: The transistor comprises: a semiconductor layer, the semiconductor layer being located above the substrate; a gate insulating layer, wherein the gate insulating layer is located on the semiconductor layer; A gate, the gate being located on the gate insulating layer; an interlayer insulating layer, the interlayer insulating layer being located on the gate; and A source electrode and a drain electrode are located on the interlayer insulating layer.

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