Vacuum plating machine

Abstract

The invention discloses a vacuum electroplating machine, and relates to the technical field of vacuum wafer electroplating machines, and the vacuum electroplating machine comprises a vacuum electroplating tank body which is installed at the top of a supporting bottom entering support and is used for forming a vacuum environment to guarantee the electroplating stability, and under the cooperation of an electroplating self-adaptive electric field electrode control assembly, the electric field intensity in a wafer edge area is insufficient; by adjusting the negative electrode contact piece, the relative distance and angle between the negative electrode contact piece and the positive electrode contact piece can be controllably changed, so that the electric field intensity and direction can be accurately controlled, the electroplating rate of the surface of a wafer is more uniform, and the electric field intensity of a local area is accurately changed; the problem that the electric field on the edge of the wafer and the electric field on the special position are not uniform is effectively solved, electric field distribution is further optimized, the electric field in the center area is more uniform, the overall electric field distribution form of the wafer is effectively adjusted, electric field uniformity optimization from local to overall omnibearing is achieved, and the thickness uniformity of an electroplated layer is greatly improved.

Description

Technical Field

[0001] The invention relates to the technical field of vacuum wafer electroplating machines, in particular to a vacuum electroplating machine. Background Art

[0002] In the field of modern science and technology, the semiconductor industry occupies an extremely critical position and is the core foundation of many high-tech products such as computer chips, smartphone chips, sensors, etc. As the basic material for semiconductor manufacturing, the surface treatment process of wafers plays a decisive role in the performance and reliability of the final product. Wafer electroplating is one of the important surface treatment technologies. By depositing a metal film on the surface of the wafer, a variety of functions can be achieved, such as improving the conductivity of the wafer, improving corrosion resistance, forming circuit connections, etc. In order to overcome the defects of traditional wet electroplating, vacuum technology has gradually been introduced into the field of wafer electroplating. The vacuum environment can effectively reduce the contamination of impurities and improve the purity of the electroplating layer. The air in the electroplating chamber is extracted by a vacuum pump to reduce the air pressure, which can control the evaporation rate of the plating solution and the movement of gas molecules, thereby providing a more stable and purer environment for the electroplating process.

[0003] At present, in the use of vacuum plating machines, when traditional vacuum plating machines are electroplating wafers, the layout and shape of the electrodes may not make the electric field evenly distributed on the wafer surface, so that the simple flat electrode structure will cause a large difference in the electric field strength between the edge and the center of the wafer, making the electroplating rate at the edge inconsistent with that in the center, resulting in uneven flow rate of the plating solution on the wafer surface, and local flow rates that are too fast or too slow. The area with too fast flow rate may make the electroplating layer thinner, while the area with too slow flow rate may cause the electroplating layer to be too thick. At the same time, it may also cause bubbles to adhere to the wafer surface, further destroying the uniformity of electroplating. Therefore, it is necessary to propose a vacuum plating machine. Summary of the invention

[0004] The object of the present invention is to provide a vacuum electroplating machine to solve the problem proposed in the above-mentioned background technology that during the use of the vacuum electroplating machine, when the traditional vacuum electroplating machine electroplates the wafer, the layout and shape of the electrodes may not make the electric field evenly distributed on the wafer surface, so that the simple flat electrode structure will cause a large difference in the electric field strength between the edge and the center of the wafer, so that the electroplating rate of the edge part is inconsistent with that of the center part, resulting in uneven flow rate of the plating solution on the wafer surface, and local flow rate is too fast or too slow. The area with too fast flow rate may make the electroplating layer thin, while the area with too slow flow rate may cause the electroplating layer to be too thick. At the same time, it may also cause bubbles to adhere to the wafer surface, further destroying the problem of electroplating uniformity.

[0005] To achieve the above object, the present invention provides the following technical solution: a vacuum plating machine, comprising: The vacuum plating tank is installed on the top of the support bottom and is used to form a vacuum environment to ensure the stability of electroplating, and through the vacuum control component, ensure that the fluctuation range of the vacuum degree is in the best environment for wafer electroplating; The transmission control component is installed on the top of the vacuum plating tank body, and is used to drive the electroplating adaptive electric field electrode control component inside the vacuum plating tank body to monitor the electric field intensity distribution on the surface of the wafer in real time according to the electric field detection sensor installed on the inner wall surface of the vacuum plating tank body, and perform dynamic regulation; The electroplating adaptive electric field electrode control component is installed inside the vacuum electroplating tank and is used to feed back data to the control processor so that the control processor dynamically adjusts the voltage or current of each electrode according to the feedback information, thereby achieving adaptive uniformity of the electric field intensity on the wafer surface; The annular electromagnetic suspension rail is installed inside the bottom of the vacuum plating tank to drive the vertical electromagnetic rail and the micro pneumatic rod to dynamically adjust the connected plating liquid nozzle and micro agitator according to the distribution of the wafers, and generate tiny turbulence through high-frequency vibration, so that the plating liquid forms a more uniform and stable flow field on the wafer surface; The wafer hanger is installed inside the vacuum plating tank. It uses multiple sets of variable-size wafer plating platforms installed on the surface of the wafer hanger to ensure the stability of the wafer during plating. It enables the array optical sensor installed on the side wall of the wafer hanger to detect the position and size information of the wafer in real time, and feed the data back to the control processor. The control processor automatically adjusts the position size and electrode contact end of the fixture according to this information.

[0006] Preferably, the electroplating adaptive electric field electrode control component includes: The electrode control wire tube, the outer diameter connecting coil and the inner diameter connecting coil form an integrated connection arrangement, and a positive electrode contact is installed at the connecting vertical pipe end of the electrode control wire tube and the inner diameter connecting coil.

[0007] Preferably, a plurality of groups of miniature transverse electromagnetic guide rails are equally divided around the gap between the outer diameter connecting coil and the inner diameter connecting coil, and the bottoms of the plurality of groups of miniature transverse electromagnetic guide rails are slidably connected with position fiber optic sensor sliding blocks, and a fine-tuning driver is installed at the bottom of the position fiber optic sensor sliding block, and a negative electrode contact is provided at the side end of the fine-tuning driver.

[0008] Preferably, the transmission control assembly includes: A drive control motor, a differential, a connecting ring frame and an inner rotating ring, wherein the drive control motor drives the differential to be installed inside the side wall frame of the vacuum plating tank body, the connecting ring frame is tightly connected to the inner wall surface of the vacuum plating tank body, a conical tooth edge is installed on the outer circumference of the inner rotating ring, a rotating groove is opened on the inner diameter surface of the inner rotating ring, and the connecting ring frame and the inner rotating ring form a rotating connection through the rotating groove.

[0009] Preferably, a conical driving gear is connected to the output end of the driving control motor, and the bottom end of the conical driving gear forms a meshing connection with the conical tooth edge. A connecting positioning block is installed inside the inner rotating ring, and the bottom of the connecting positioning block is fastened with a wire tube connecting end, and the bottom of the wire tube connecting end forms a connection with the top of the electrode control wire tube.

[0010] Preferably, the vacuum control assembly comprises: A two-stage vacuum pump, a low-temperature adsorption pump, an ion pump and a metal filter. The bottom of the metal filter is fastened with a connecting flange seat, and the metal filter is sealed and connected to the top of the vacuum plating tank body through the connecting flange seat. The side end of the ion pump is connected to an ionization adsorption membrane frame, and a plurality of groups of inert gas adsorbers are installed on the frame surface of the ionization adsorption membrane frame.

[0011] Preferably, the two-stage vacuum pump and the low-temperature adsorption pump are mounted on the surface of the supporting frame on the top of the vacuum plating tank body. The two-stage vacuum pump is composed of a primary vacuum pump and a secondary vacuum pump, so that the primary vacuum pump first reduces the air pressure in the vacuum plating tank body to a certain level, and the secondary vacuum pump further increases the vacuum degree and maintains it at a high-precision level. The two-stage vacuum pump and the high-precision pressure sensor installed on the inner wall surface of the vacuum plating tank body form a signal connection, so that the high-precision pressure sensor monitors the change of the vacuum degree in real time and feeds back the data to the control processor. The control processor automatically adjusts the working parameters of the rotation speed and start-stop time of the two-stage vacuum pump according to the pressure feedback information to ensure that the vacuum degree is always stable within the set process requirements. The low-temperature adsorption pump is used to remove most of the impurity gases inside the vacuum plating tank body through the adsorption of gas molecules by the low-temperature surface.

[0012] Preferably, the outer wall side end of the vacuum plating tank body is connected to a closed-loop gas circulation pipeline, and the outer wall surface of the vacuum plating tank body is connected to a circulation connecting valve tube. The bottom end of the closed-loop gas circulation pipeline and the inner side end of the circulation connecting valve tube are connected through a connecting pipe, and the outer side end of the circulation connecting valve tube is connected to the bottom output end of the two-stage vacuum pump through a connecting guide pipe.

[0013] Preferably, the outer wall surface of the vacuum plating tank is connected with a plating liquid discharge pipe and a plating liquid inlet pipe respectively, and the plating liquid inlet pipe is connected with a plating liquid nozzle through a pipeline built into the inner cavity of the vacuum plating tank.

[0014] Preferably, a pusher is installed inside the bottom of the support bottom entry bracket, and the pusher is used to allow the wafer rack to enter from the bottom opening of the vacuum plating tank body and to perform adjustment and replacement.

[0015] Compared with the prior art, the present invention has the following beneficial effects: 1. In the present invention, with the cooperation of the electroplating adaptive electric field electrode control component, when the electroplating operation starts, the current is transmitted to the positive electrode contact and the negative electrode contact through the electrode control line tube, and the initial electric field is established on the wafer surface. At the same time, the position optical fiber sensor at the bottom of the position optical fiber sensor sliding block is used to monitor the electric field strength data of different positions on the wafer surface in real time and transmit it to the control processor. The control processor, based on the feedback data, drives the negative electrode contact to perform micron-level or nanometer-level fine displacement adjustment for the area with weak electric field strength under the guidance of the micro-transverse electromagnetic guide rail. In the edge area of ​​the wafer, the electric field strength is insufficient. By adjusting the adjustment of the negative electrode contact, the relative distance and angle between it and the positive electrode contact can be controllably changed, so as to achieve precise control of the electric field strength and direction. When the electric field at the edge of the wafer is weak, the negative electrode contact is slightly moved closer to the edge, shortening the length of the electric field line, thereby enhancing the electric field strength in the edge area, making the electroplating rate on the wafer surface more uniform, and accurately changing the electric field strength in the local area, effectively solving the problem of uneven electric field at the edge of the wafer and at special positions.

[0016] 2. In the present invention, with the cooperation of the electroplating adaptive electric field electrode control component, while adjusting the position of the negative electrode contact, the control processor further optimizes the electric field distribution by adjusting the current size and direction in the outer diameter connecting coil and the inner diameter connecting coil, so that the current of the outer diameter connecting coil can be increased, which is convenient for generating a stronger magnetic field effect in the peripheral area of ​​the wafer, assisting in the improvement of the electric field strength, or changing the current direction of the inner diameter connecting coil, thereby changing the distribution pattern of the electric field in the central area of ​​the wafer, making the electric field in the central area more uniform, and effectively adjusting the overall electric field distribution pattern of the wafer, realizing all-round optimization of the electric field uniformity from local to overall, and greatly improving the uniformity of the electroplating layer thickness.

[0017] 3. In the present invention, with the cooperation of the transmission control component, when the electroplating operation is performed, the control processor first sends an instruction to the drive control motor according to the position information of the wafer, and the drive control motor starts to rotate. The output power of the motor is adjusted and distributed through the differential, and then transmitted to the conical drive gear. The conical drive gear meshes with the conical tooth edge of the outer inner rotating ring, driving the inner rotating ring to rotate in the rotating groove of the connecting ring frame. The rotation of the inner rotating ring is accurately transmitted to the electrode control wire tube through the connecting positioning block and the wire tube connecting end, thereby driving the electroplating adaptive electric field electrode control component to move to a predetermined initial position, so as to establish an initial electric field on the wafer surface. Field, and when the position of the negative electrode contact needs to be fine-tuned, the drive control motor accurately rotates a certain angle or speed according to the command, and drives the inner rotating ring to rotate a small angle through the differential and the conical drive gear. The rotation of the inner rotating ring is converted into precise displacement of the electrode control wire tube through the connection positioning block and the wire tube connection end, thereby realizing the small displacement adjustment of the negative electrode contact on the micro transverse electromagnetic guide rail, changing the relative distance and angle between it and the positive electrode contact, and then adjusting the electric field strength and direction on the wafer surface, ensuring that the electric field strength on the wafer surface is always stable within the preset uniformity requirement range, providing reliable guarantee for high-quality electroplating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the main structure of a vacuum plating machine of the present invention; Figure 2 It is a schematic structural diagram of a vacuum electroplating machine in a side view of the present invention; Figure 3 It is a structural schematic diagram of a vacuum control component in a vacuum plating machine of the present invention; Figure 4 A schematic diagram of the internal structure of a vacuum plating tank in a vacuum plating machine of the present invention; Figure 5 It is a structural schematic diagram of a transmission control component in a vacuum electroplating machine of the present invention; Figure 6 A vacuum plating machine of the present invention Figure 5 A schematic diagram of the enlarged structure at point A; Figure 7 It is a structural schematic diagram of an electroplating adaptive electric field electrode control component in a vacuum electroplating machine of the present invention; Figure 8 A vacuum plating machine of the present invention Figure 7 A schematic diagram of the enlarged structure at B; Fig. 9 A vacuum plating machine of the present invention Figure 7 A is an enlarged structural diagram of FIG.

[0019] In the figure: 1. Support bottom entry bracket; 2. Vacuum plating tank; 3. Plating liquid discharge pipe; 4. Push car; 5. Control processor; 6. Circulation connection valve pipe; 7. Vacuum control component; 71. Two-stage vacuum pump; 72. Low temperature adsorption pump; 73. Ionization adsorption membrane frame; 74. Connection flange seat; 75. Metal filter; 76. Inert gas adsorber; 77. Ion pump; 8. Closed-loop gas circulation pipeline; 9. Transmission control component; 91. Drive control motor; 92. Differential; 93. Connection ring frame; 94. Inner swivel; 95. Conical tooth edge; 96. Rotation groove; 97. Wire pipe Connecting end; 98, conical driving gear; 99, connecting positioning block; 10, electroplating solution feeding tube; 12, electroplating adaptive electric field electrode control component; 120, electrode control wire tube; 121, outer diameter connecting coil; 122, inner diameter connecting coil; 123, positive electrode contact; 124, micro transverse electromagnetic guide; 125, position optical fiber sensor sliding block; 126, fine-tuning drive; 127, negative electrode contact; 13, annular electromagnetic suspension guide; 14, vertical electromagnetic guide; 15, wafer hanger; 16, micro pneumatic gas rod; 17, plating solution nozzle; 18, micro agitator. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the implementation regulations described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In the present invention, reference is made to Figure 1 - Fig. 9 Shown: A vacuum plating machine, comprising: The vacuum plating tank 2 is installed on the top of the support bottom and the bracket 1, and is used to form a vacuum environment to ensure the stability of the electroplating, and through the vacuum control component 7, to ensure that the fluctuation range of the vacuum degree is in the best environment for wafer electroplating; The transmission control component 9 is installed on the top of the vacuum plating tank 2, and is used to drive the electroplating adaptive electric field electrode control component 12 inside the vacuum plating tank 2 to monitor the electric field intensity distribution on the surface of the wafer in real time according to the electric field detection sensor installed on the inner wall surface of the vacuum plating tank 2, and perform dynamic regulation; The electroplating adaptive electric field electrode control component 12 is installed inside the vacuum electroplating tank 2 and is used to feed back data to the control processor 5, so that the control processor 5 dynamically adjusts the voltage or current of each electrode according to the feedback information, thereby realizing adaptive uniformity of the electric field intensity on the wafer surface; The annular electromagnetic suspension guide rail 13 is installed inside the bottom end of the vacuum plating tank 2, and is used to drive the vertical electromagnetic guide rail 14 and the micro pneumatic rod 16 to dynamically adjust the connected plating liquid nozzle 17 and the micro agitator 18 according to the distribution of the wafers, and generate a tiny turbulent flow through high-frequency vibration, so that the plating liquid forms a more uniform and stable flow field on the wafer surface; The wafer hanger 15 is installed inside the vacuum plating tank 2. It uses multiple groups of variable-size wafer plating platforms installed on the surface of the wafer hanger 15 to ensure the stability of the wafer during plating. It enables the array optical sensor installed on the side wall of the wafer hanger 15 to detect the position and size information of the wafer in real time, and feed the data back to the control processor 5. The control processor 5 automatically adjusts the position size and electrode contact end of the fixture according to this information.

[0022] In a specific scheme, the vacuum plating tank 2 and the vacuum control component 7 work together to create a low-pressure, low-impurity environment for wafer electroplating, so that the evaporation rate of the plating solution can be accurately controlled in a vacuum environment, reducing the composition changes and environmental pollution caused by the volatilization of the plating solution. At the same time, due to the reduction in the number of gas molecules, during the electroplating process, the collision and scattering of metal ions when migrating to the wafer surface under the action of the electric field are also reduced accordingly, making the electroplating process more stable and efficient, which is conducive to improving the quality and uniformity of the electroplated layer, and enabling the annular electromagnetic suspension guide 13, the vertical electromagnetic guide 14 and the micro-pneumatic air rod 16 to cooperate, so that the plating liquid nozzle 17 and the micro-stirrer 18 can be quickly and accurately moved to the appropriate position according to the distribution of the wafer, ensuring that the plating liquid can be evenly sprayed on the wafer surface, and the micro-stirrer 18 can generate turbulence at the optimal position to optimize the plating liquid flow field. Secondly, the variable-size wafer plating platform and the array-type optical array on the wafer hanger 15 The optical sensor realizes stable fixation and accurate detection of wafers of different sizes. The fixture of the variable-size wafer electroplating platform automatically adjusts the position and size according to the size of the wafer, ensuring that the wafer can be firmly fixed on the hanger and will not be displaced or shaken during the electroplating process. The array optical sensor monitors the position and size information of the wafer in real time and feeds the data back to the control processor 5. The control processor 5 can not only adjust the position and size of the fixture based on these data, but also adjust the contact state between the electrode contact end and the wafer to ensure that the electric field can be evenly applied to the wafer surface. At the same time, it also ensures that the plating liquid nozzle 17 and the micro-agitator 18 can maintain the best relative position relationship with the wafer surface. During the entire electroplating process, the wafer hanger 15 can evenly conduct the current required for electroplating to the wafer, ensuring that all areas of the wafer surface can undergo electroplating reaction under the action of the electric field. At the same time, the wafer hanger 15 can dissipate the heat generated during the electroplating process in time to avoid affecting the electroplating quality or causing the wafer to deform due to excessive temperature.

[0023] Embodiment 1: In the present invention, according to Figure 4 , Figure 7 and Fig. 9 As shown, the electroplating adaptive electric field electrode control component 12 includes: The electrode control wire tube 120, the outer diameter connecting coil 121 and the inner diameter connecting coil 122 form an integrated connection setting, and the positive electrode contact 123 is installed at the connecting vertical pipe end of the electrode control wire tube 120 and the inner diameter connecting coil 122.

[0024] A plurality of groups of miniature transverse electromagnetic guide rails 124 are equally divided around the gap between the outer diameter connecting coil 121 and the inner diameter connecting coil 122, and a position fiber optic sensor sliding block 125 is slidably connected to the bottom of the plurality of groups of miniature transverse electromagnetic guide rails 124. A fine-tuning driver 126 is installed at the bottom of the position fiber optic sensor sliding block 125, and a negative electrode contact 127 is arranged at the side end of the fine-tuning driver 126.

[0025] In a specific solution, when the electroplating operation starts, the current is transmitted to the positive electrode contact 123 and the negative electrode contact 127 through the electrode control line tube 120, and an initial electric field is established on the surface of the wafer. At the same time, the position fiber optic sensor sliding block 125 drives the fine-tuning driver 126 and the negative electrode contact 127 to start moving along a preset trajectory on the micro transverse electromagnetic guide rail 124. The position fiber optic sensor at the bottom monitors the electric field strength data at different positions on the surface of the wafer in real time, so that these data are transmitted to the control processor 5. The control processor 5 analyzes and calculates according to the received electric field strength data according to the preset electric field uniformity algorithm, comprehensively considering factors such as the shape, size, material and electroplating process requirements of the wafer, and determines The target value range of the electric field strength at each monitoring point is determined, and the difference between the actual monitoring value and the target value is compared. When the control processor 5 detects that the electric field strength on the wafer surface is uneven, that is, the electric field strength at some positions deviates from the target value range, the control processor 5 sends an instruction to the corresponding fine-tuning driver 126 for the area with weaker electric field strength. The fine-tuning driver 126 drives the cathode contact 127 to perform micron-level or nanometer-level fine displacement adjustment under the guidance of the micro-transverse electromagnetic guide rail 124. That is, when the electric field strength in the wafer edge area is insufficient, the relative distance and angle between the cathode contact 127 and the anode contact 123 can be controlled by adjusting the adjustment of the cathode contact 127, so as to achieve precise control of the electric field strength and direction. When the electric field at the edge of the wafer is weak, the cathode electrode contact 127 is slightly moved closer to the edge to shorten the length of the electric field line, thereby enhancing the electric field strength in the edge area, making the electroplating rate on the wafer surface more uniform, and accurately changing the electric field strength in the local area, effectively solving the problem of uneven electric field at the edge of the wafer and special positions. While adjusting the position of the cathode electrode contact 127, the control processor 5 can also further optimize the electric field distribution by adjusting the current size and direction in the outer diameter connecting coil 121 and the inner diameter connecting coil 122, so that the current of the outer diameter connecting coil 121 can be increased, so as to generate a stronger magnetic field effect in the peripheral area of ​​the wafer, assist in improving the electric field strength, or change the current direction of the inner diameter connecting coil 122. , thereby changing the distribution of the electric field in the center area of ​​the wafer, making the electric field in the center area more uniform, effectively adjusting the overall electric field distribution of the wafer, and realizing all-round optimization of the electric field uniformity from local to overall, greatly improving the uniformity of the electroplating layer thickness. With the position adjustment of the cathode electrode contact 127 and the change of the coil current, the position optical fiber sensor sliding block 125 continues to monitor the changes in the electric field intensity on the wafer surface in real time, and feeds back the new data to the control processor 5. The control processor 5 continues to calculate and adjust according to the feedback information until the electric field intensity on the entire wafer surface reaches the preset uniformity requirement. During the electroplating process, the electroplating adaptive electric field electrode control component 12 continues to work to maintain stable control of the electric field intensity on the wafer surface.Once the position optical fiber sensor slider 125 detects an abnormal change in the electric field strength, it immediately triggers the control processor 5 to make adjustments again to ensure that the electric field strength is always stable within the uniformity requirement range, thereby ensuring the stability and reliability of the entire electroplating process.

[0026] Embodiment 2: In the present invention, according to Figure 1 , Figure 2 and Figure 4 - Figure 6 As shown, the transmission control component 9 includes: The drive control motor 91, the differential 92, the connecting ring frame 93 and the inner rotating ring 94 are installed inside the side wall frame of the vacuum plating tank body 2. The connecting ring frame 93 is tightly connected to the inner wall surface of the vacuum plating tank body 2. A conical tooth edge 95 is installed on the outer circumference of the inner rotating ring 94. A rotating groove 96 is opened on the inner diameter surface of the inner rotating ring 94. The connecting ring frame 93 and the inner rotating ring 94 form a rotating connection through the rotating groove 96.

[0027] The output end of the drive control motor 91 is connected to a conical drive gear 98, and the bottom end of the conical drive gear 98 forms a meshing connection with the conical tooth edge 95. The inner installation of the inner rotating ring 94 is connected to a positioning block 99, and the bottom of the positioning block 99 is fastened to a wire tube connecting end 97, and the bottom of the wire tube connecting end 97 forms a connection with the top of the electrode control wire tube 120.

[0028] In a specific scheme, when the electroplating operation is performed, the control processor 5 first sends a command to the drive control motor 91 according to the position information of the wafer, and the drive control motor 91 starts to rotate. The output power of the motor is adjusted and distributed through the differential 92, and then transmitted to the conical drive gear 98. The conical drive gear 98 is engaged with the conical tooth edge 95 on the outside of the inner rotating ring 94, driving the inner rotating ring 94 to rotate in the rotating groove 96 of the connecting ring frame 93. The rotation of the inner rotating ring 94 is accurately transmitted to the electrode control wire tube 120 through the connecting positioning block 99 and the wire tube connecting end 97, thereby driving the electroplating adaptive electric field electrode The control component 12 moves to a predetermined initial position so as to establish an initial electric field on the wafer surface. During the operation and adjustment of the electroplating adaptive electric field electrode control component 12, the position optical fiber sensor sliding block 125 is used to enable the control processor 5 to analyze and calculate according to the electric field strength data in accordance with a preset electric field uniformity algorithm. At the same time, combined with the current position information of the cathode electrode contact 127, the speed and direction of the drive control motor 91 are further adjusted to accurately control the position of the cathode electrode contact 127, thereby ensuring that a uniform initial electric field is established on the wafer surface. As the electroplating process proceeds, when the electroplating adaptive electric field electrode control component When the position needs to be adjusted to optimize the electric field distribution according to the electric field monitoring data, the control processor 5 sends an instruction to the drive control motor 91 again, so that when the position of the negative electrode contact 127 needs to be fine-tuned, the drive control motor 91 accurately rotates a certain angle or speed according to the instruction, and drives the inner rotating ring 94 to rotate at a small angle through the differential 92 and the conical drive gear 98. The rotation of the inner rotating ring 94 is converted into a precise displacement of the electrode control wire tube 120 through the connection positioning block 99 and the wire tube connection end 97, thereby realizing the small displacement adjustment of the negative electrode contact 127 on the micro transverse electromagnetic guide rail 124, changing its The relative distance and angle between the positive electrode contact 123 and the wafer surface are adjusted to adjust the electric field strength and direction. During the electroplating process, the transmission control component 9 works continuously and stably to maintain precise control of the electroplating adaptive electric field electrode control component 12, so as to facilitate the drive control motor 91 to continuously adjust its own speed and direction according to the real-time instructions of the control processor 5 to compensate for the position deviation caused by the change of the wafer surface state (such as the flow of plating solution, temperature change, etc.) or the electric field regulation, thereby ensuring that the electric field strength on the wafer surface is always stable within the preset uniformity requirement range, providing reliable guarantee for high-quality electroplating process.

[0029] Embodiment 3: In the present invention, according to Figure 1 - Figure 3 As shown, the vacuum control assembly 7 includes: A two-stage vacuum pump 71, a low-temperature adsorption pump 72, an ion pump 77 and a metal filter 75. The bottom of the metal filter 75 is fastened with a connecting flange seat 74. The metal filter 75 is sealed and connected to the top of the vacuum plating tank body 2 through the connecting flange seat 74. The side end of the ion pump 77 is connected to an ionization adsorption membrane frame 73. A plurality of groups of inert gas adsorbers 76 are installed on the frame surface of the ionization adsorption membrane frame 73.

[0030] The two-stage vacuum pump 71 and the low-temperature adsorption pump 72 are mounted on the surface of the supporting frame on the top of the vacuum plating tank body 2. The two-stage vacuum pump 71 is composed of a primary vacuum pump and a secondary vacuum pump, so that the primary vacuum pump first reduces the air pressure in the vacuum plating tank body 2 to a certain level, and the secondary vacuum pump further increases the vacuum degree and maintains it at a high-precision level. The two-stage vacuum pump 71 and the high-precision pressure sensor installed on the inner wall surface of the vacuum plating tank body 2 form a signal connection, so that the high-precision pressure sensor monitors the change of the vacuum degree in real time and feeds back the data to the control processor 5. The control processor 5 automatically adjusts the working parameters of the rotation speed and start-stop time of the two-stage vacuum pump 71 according to the pressure feedback information to ensure that the vacuum degree is always stable within the set process requirements. The low-temperature adsorption pump 72 is used to remove most of the impurity gases inside the vacuum plating tank body 2 through the adsorption of gas molecules by the low-temperature surface.

[0031] In a specific scheme, during the start-up preparation stage of the vacuum electroplating machine, the two-stage vacuum pump 71 starts working first, so that the primary vacuum pump starts, and the interior of the vacuum plating tank body 2 is preliminarily evacuated, and the air pressure in the tank body is quickly reduced to an intermediate pressure level. When the air pressure in the tank reaches the limit of the primary vacuum pump or the preset intermediate pressure value, the secondary vacuum pump starts and takes over the primary vacuum pump to continue evacuating, further reducing the air pressure in the tank, so that the vacuum degree gradually approaches the high-precision vacuum level required for the electroplating process. During the operation of the secondary vacuum pump, the high-precision pressure sensor continuously monitors the vacuum degree and feeds back the data to the control processor 5. The control processor 5 adjusts the speed of the secondary vacuum pump according to these data to achieve more accurate vacuum degree control. When the two-stage vacuum pump 71 reduces the air pressure in the vacuum plating tank body 2 to a certain level, the low-temperature adsorption pump 72 starts working, so that the low-temperature adsorption The pump 72 cools the adsorption surface inside it to an extremely low temperature through a refrigeration device, and utilizes the high adsorption capacity of the low-temperature surface for gas molecules to adsorb and remove a large amount of impurity gases remaining in the tank body, especially water vapor, organic volatiles and other gas components that have a serious impact on the quality of electroplating. Then, the electrodes on the ionization adsorption membrane frame 73 inside the ion pump 77 are energized to generate high-energy electrons to ionize the gas molecules in the tank body, so that the ionized gas ions are adsorbed onto the inert gas adsorber 76 on the surface of the ionization adsorption membrane frame 73 under the action of the electric field, thereby further removing the residual gas molecules, including some inert gases and trace impurity gases. During the vacuum electroplating process, the metal filter 75 is used to filter out tiny particles that enter the vacuum system from the outside or are generated inside the vacuum system, so as to prevent these particles from entering the vacuum plating tank 2 to contaminate the wafer surface or affect the electroplating process.

[0032] Embodiment 4: In the present invention, according to Figure 1 , Figure 2 , Figure 4 and Figure 8 As shown, the outer wall side end of the vacuum plating tank body 2 is connected to a closed-loop gas circulation pipeline 8, and the outer wall surface of the vacuum plating tank body 2 is connected to a circulation connecting valve tube 6. The bottom end of the closed-loop gas circulation pipeline 8 and the inner side end of the circulation connecting valve tube 6 are connected through a connecting pipe, and the outer side end of the circulation connecting valve tube 6 is connected to the bottom output end of the two-stage vacuum pump 71 through a connecting guide pipe.

[0033] The outer wall surface of the vacuum plating tank body 2 is connected with a plating liquid discharge pipe 3 and a plating liquid inlet pipe 10 respectively. The plating liquid inlet pipe 10 is connected with a plating liquid nozzle 17 through a pipeline built into the internal cavity of the vacuum plating tank body 2.

[0034] A pusher 4 is installed inside the bottom of the support bottom entry bracket 1. The pusher 4 is used to allow the wafer hanger 15 to enter from the bottom opening of the vacuum plating tank 2 and to form an adjustment and replacement.

[0035] In a specific scheme, before starting the electroplating operation, the wafer to be electroplated is placed on the wafer hanger 15, and the wafer hanger 15 is pushed into the interior of the vacuum plating tank 2 from the bottom opening by the pusher 4 to ensure that the wafer on the wafer hanger 15 is in a suitable electroplating position and in good contact with the electroplating adaptive electric field electrode control component 12, and then the plating liquid is transported to the vicinity of the plating liquid nozzle 17 inside the vacuum plating tank 2 through the plating liquid inlet pipe 10 to prepare for the electroplating operation, and then when the electroplating operation is in progress, the plating liquid nozzle 17 evenly sprays the plating liquid on the surface of the wafer, and the annular electromagnetic suspension guide rail 13 drives the vertical electromagnetic guide rail 14 and the micro pneumatic gas rod 16 to dynamically adjust the plating liquid nozzle 17 and the micro pneumatic gas rod 16 according to the distribution of the wafers. Agitator 18, the micro agitator 18 generates tiny turbulence through high-frequency vibration, so that the plating solution forms a more uniform and stable flow field on the surface of the wafer. Secondly, the gas in the vacuum plating tank 2 enters the closed-loop gas circulation pipeline 8 through the circulation connecting valve pipe 6 under the action of the two-stage vacuum pump 71. In the closed-loop gas circulation pipeline 8, the gas undergoes the above-mentioned purification treatment (through the low-temperature adsorption pump 72, the ion pump 77 and the metal filter 75, etc. to adsorb and filter the impurities in the gas), and then returns to the bottom output end of the two-stage vacuum pump 71 through the connecting guide pipe, and then is sent back to the vacuum plating tank 2, so as to realize the recycling of the gas and further maintain the stability and cleanliness of the vacuum environment. Finally, the plating liquid is discharged from the plating liquid discharge pipe 3.

[0036] The wiring diagram of the control processor 5, two-stage vacuum pump 71, low-temperature adsorption pump 72, ionization adsorption membrane frame 73, metal filter 75, inert gas adsorber 76, ion pump 77, drive control motor 91, position fiber optic sensor slider 125, fine-tuning driver 126, high-precision pressure sensor and micro-stirrer 18 in the present invention is common knowledge in the field, and its working principle is a well-known technology. The model is selected according to the actual use. Therefore, the control method and wiring arrangement of the control processor 5, two-stage vacuum pump 71, low-temperature adsorption pump 72, ionization adsorption membrane frame 73, metal filter 75, inert gas adsorber 76, ion pump 77, drive control motor 91, position fiber optic sensor slider 125, fine-tuning driver 126, high-precision pressure sensor and micro-stirrer 18 are no longer explained in detail.

[0037] Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A vacuum plating machine, characterized in that: Included are: A vacuum electroplating tank (2) is installed on the top of the support bottom entry bracket (1) and is used to form a vacuum environment to ensure the stability of electroplating, and to ensure that the fluctuation range of the vacuum degree is in the optimal environment for wafer electroplating through a vacuum control component (7); A transmission control component (9) is installed on the top of the vacuum plating tank (2) and is used to drive the electroplating adaptive electric field electrode control component (12) inside the vacuum plating tank (2) to monitor the electric field intensity distribution on the surface of the wafer in real time according to the electric field detection sensor installed on the inner wall surface of the vacuum plating tank (2) and perform dynamic regulation; An electroplating adaptive electric field electrode control component (12) is installed inside the vacuum electroplating tank (2) and is used to feed back data to the control processor (5), so that the control processor (5) dynamically adjusts the voltage or current of each electrode according to the feedback information, thereby achieving adaptive uniformity of the electric field intensity on the surface of the wafer; An annular electromagnetic suspension guide rail (13) is installed inside the bottom end of the vacuum plating tank (2) and is used to drive the vertical electromagnetic guide rail (14) and the micro pneumatic rod (16) to dynamically adjust the connected plating liquid nozzle (17) and the micro agitator (18) according to the distribution of the wafers, and to generate a tiny turbulent flow through high-frequency vibration, so that the plating liquid forms a more uniform and stable flow field on the surface of the wafer; A wafer hanger (15) is installed inside a vacuum electroplating tank (2). A plurality of variable-size wafer electroplating platforms installed on the surface of the wafer hanger (15) are used to ensure the stability of the wafer during electroplating. The array optical sensor installed on the side wall of the wafer hanger (15) can be used to detect the position and size information of the wafer in real time, and the data is fed back to the control processor (5). The control processor (5) automatically adjusts the position and size of the fixture and the electrode contact end according to the information.

2. The vacuum plating machine according to claim 1, characterized in that: The electroplating adaptive electric field electrode control component (12) comprises: An electrode control wire tube (120), an outer diameter connection coil (121) and an inner diameter connection coil (122), wherein the electrode control wire tube (120), the outer diameter connection coil (121) and the inner diameter connection coil (122) form an integrated connection arrangement, and a positive electrode contact piece (123) is installed at a connecting vertical pipe end of the electrode control wire tube (120) and the inner diameter connection coil (122).

3. The vacuum plating machine according to claim 2, characterized in that: A plurality of groups of micro transverse electromagnetic guide rails (124) are equally spaced around the gap between the outer diameter connecting coil (121) and the inner diameter connecting coil (122); the bottoms of the plurality of groups of micro transverse electromagnetic guide rails (124) are all slidably connected to position optical fiber sensor sliding blocks (125); a fine-tuning driver (126) is installed at the bottom of the position optical fiber sensor sliding block (125); and a negative electrode contact piece (127) is provided at the side end of the fine-tuning driver (126).

4. The vacuum plating machine according to claim 1, characterized in that: The transmission control component (9) comprises: A drive control motor (91), a differential (92), a connecting ring frame (93) and an inner rotating ring (94); the drive control motor (91) drives the differential (92) to be installed inside a side wall frame of a vacuum plating tank (2); the connecting ring frame (93) is fastened to the inner wall surface of the vacuum plating tank (2); a conical tooth edge (95) is installed on the outer circumference of the inner rotating ring (94); a rotating groove (96) is provided on the inner diameter surface of the inner rotating ring (94); and the connecting ring frame (93) and the inner rotating ring (94) are rotatably connected via the rotating groove (96).

5. The vacuum plating machine according to claim 4, characterized in that: The output end of the drive control motor (91) is connected to a conical drive gear (98), the bottom end of the conical drive gear (98) is meshed with the conical tooth edge (95), a connection positioning block (99) is installed inside the inner rotating ring (94), the bottom of the connection positioning block (99) is fastened to a wire tube connection end (97), and the bottom of the wire tube connection end (97) is connected to the top of the electrode control wire tube (120).

6. The vacuum plating machine according to claim 1, characterized in that: The vacuum control component (7) comprises: A two-stage vacuum pump (71), a cryogenic adsorption pump (72), an ion pump (77) and a metal filter (75); the bottom of the metal filter (75) is fastened with a connecting flange seat (74); the metal filter (75) is sealedly connected to the top of the vacuum plating tank (2) via the connecting flange seat (74); the side end of the ion pump (77) is connected to an ionization adsorption membrane frame (73); and a plurality of groups of inert gas adsorbers (76) are installed on the frame surface of the ionization adsorption membrane frame (73).

7. The vacuum plating machine according to claim 6, characterized in that: The two-stage vacuum pump (71) and the low-temperature adsorption pump (72) are mounted on the surface of the support frame on the top of the vacuum plating tank (2). The two-stage vacuum pump (71) is composed of a primary vacuum pump and a secondary vacuum pump, so that the primary vacuum pump first reduces the air pressure in the vacuum plating tank (2) to a certain degree, and the secondary vacuum pump further increases the vacuum degree and maintains it at a high-precision level. The two-stage vacuum pump (71) forms a signal connection with a high-precision pressure sensor mounted on the inner wall surface of the vacuum plating tank (2), so that the high-precision pressure sensor monitors the change of the vacuum degree in real time and feeds back the data to the control processor (5). The control processor (5) automatically adjusts the rotation speed and start-stop time of the two-stage vacuum pump (71) according to the pressure feedback information to ensure that the vacuum degree is always stable within the set process requirement range. The low-temperature adsorption pump (72) is used to remove most of the impurity gases inside the vacuum plating tank (2) through the adsorption of gas molecules by the low-temperature surface.

8. The vacuum plating machine according to claim 1, characterized in that: The side end of the outer wall of the vacuum plating tank body (2) is connected to a closed-loop gas circulation pipeline (8), and the outer wall surface of the vacuum plating tank body (2) is connected to a circulation connection valve pipe (6). The bottom end of the closed-loop gas circulation pipeline (8) and the inner side end of the circulation connection valve pipe (6) are connected via a connecting pipe, and the outer side end of the circulation connection valve pipe (6) is connected to the bottom output end of the two-stage vacuum pump (71) via a connecting guide pipe.

9. The vacuum plating machine according to claim 1, characterized in that: The outer wall surface of the vacuum electroplating tank (2) is respectively connected with a plating liquid discharge pipe (3) and a plating liquid inlet pipe (10), and the plating liquid inlet pipe (10) is connected to a plating liquid nozzle (17) via a pipeline built into the internal cavity of the vacuum electroplating tank (2).

10. The vacuum plating machine according to claim 1, characterized in that: A pusher (4) is installed inside the bottom of the supporting bottom entry bracket (1), and the pusher (4) is used to allow the wafer hanger (15) to enter from the bottom opening of the vacuum plating tank (2) to form an adjustment and replacement.

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