Current measurement method and device and quantum current sensor

Abstract

The invention relates to the technical field of electric power measurement, in particular to a current measurement method and device and a quantum current sensor. The method comprises the steps that magnetic induction intensity data collected by a quantum magnetic sensitive chip in a quantum current sensor and relative position parameters, collected by a positioning module in the quantum current sensor, of the quantum magnetic sensitive chip relative to a current-carrying conductor are obtained; and determining a current measurement value of the current-carrying conductor according to the relative position parameters and the magnetic induction intensity data acquired by the magnetic sensitive chip.

Description

Technical Field

[0001] The present application relates to the field of electric power technology, and in particular to a current measurement method, device and quantum current sensor. Background Art

[0002] Current is an important parameter in the power system. There are many current measurement methods, such as current transformers based on Faraday's electromagnetic induction principle and shunts based on Ampere's law. These measurement methods are all invasive measurements, and the measuring device needs to be connected to the primary conductor and have current flowing through it. Another current measurement method is to measure the magnetic field generated by the current and infer the current flowing through the conductor, such as Hall current sensors using the Hall effect and all-fiber current sensors using the magneto-optical effect. This measurement method is non-invasive, and the primary conductor current does not need to flow through the measuring device.

[0003] The relationship between magnetic field and current follows Biot-Savart's law and Ampere's circuit law. After measuring the magnitude of the magnetic field, the current sensor based on magnetic field measurement infers the magnitude of the current according to the above law. In addition to knowing the magnitude of the magnetic field in space, Biot-Savart's law also requires knowing the relative position between the current sensor and the conductor to be measured. How to accurately locate it is directly related to the measurement result of the current sensor. Usually, the current sensor size and the current-carrying conductor position are fixed for positioning, but due to environmental vibration, installation deviation, external interference, etc., there will be a certain error in the measured current. Summary of the invention

[0004] Based on this, it is necessary to provide a current measurement method, device and quantum current sensor that can reduce the error of current measurement results in response to the above technical problems.

[0005] In a first aspect, a current measurement method is provided, which is applied to a quantum current sensor, and the method comprises:

[0006] Acquire the magnetic induction intensity data collected by the quantum magnetic sensitive chip in the quantum current sensor and the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor;

[0007] The current measurement value of the current-carrying conductor is determined according to the relative position parameters and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0008] In one embodiment, obtaining magnetic induction intensity data collected by a quantum magnetic sensitive chip in a quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to a current-carrying conductor collected by a positioning module in the quantum current sensor includes:

[0009] Obtaining magnetic induction intensity data collected by the quantum magnetic sensitive chip in the quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor during the target collection time period;

[0010] According to the relative position parameters in the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip, the current measurement value of the current-carrying conductor corresponding to the target acquisition time period is determined.

[0011] In one embodiment, the number of the positioning modules is at least one; accordingly, obtaining the relative position parameters of the quantum magnetic sensitive chip collected by the positioning module in the quantum current sensor relative to the current-carrying conductor within the target collection time period includes:

[0012] Determine the fusion position parameter corresponding to the target acquisition time period according to the relative position parameters corresponding to each positioning module corresponding to the target acquisition time period;

[0013] The current measurement value of the current-carrying conductor is determined according to the fusion position parameter corresponding to the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip within the target acquisition time period.

[0014] In one embodiment, any positioning module includes at least one positioning chip; obtaining the relative position parameters of the quantum magnetic sensitive chip collected by the positioning module in the quantum current sensor relative to the current-carrying conductor includes:

[0015] For any positioning module, obtain the lower-level position parameters collected by each positioning chip in the positioning module;

[0016] According to each subordinate position parameter, the relative position parameter of the quantum magnetic sensitive chip collected by the positioning module relative to the current-carrying conductor is determined.

[0017] In one embodiment, determining the relative position parameters of the quantum magnetic sensitive chip collected by the positioning module relative to the current-carrying conductor according to each subordinate position parameter includes:

[0018] Perform fusion processing on each subordinate position parameter to obtain a subordinate fusion parameter;

[0019] The lower-level fusion parameters are determined as the relative position parameters of the quantum magnetic sensitive chip collected by the positioning module relative to the current-carrying conductor.

[0020] In one embodiment, the method includes:

[0021] Using the first thread, the initial position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by each positioning module in a plurality of different sample collection time periods are obtained; wherein any sample collection time period includes at least one collection moment;

[0022] For any positioning module, the initial position parameters collected by the positioning module in any sample collection time period are used as the initial position set of the positioning module;

[0023] According to the initial position set corresponding to each positioning module in the sample collection time period, the relative position parameter corresponding to the positioning module in the sample collection time period is determined.

[0024] In one embodiment, determining the current measurement value of the current-carrying conductor according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip includes:

[0025] The second thread is used to determine the current measurement value of the current-carrying conductor according to the relative position parameters corresponding to each positioning module in the target collection time period and the magnetic induction intensity data collected by the magnetic sensitive chip; wherein the target collection time period is at least two collection time periods selected from each sample collection time period.

[0026] In one embodiment, determining the relative position parameter of the positioning module corresponding to the sample collection time period according to the initial position set of each positioning module corresponding to the sample collection time period includes:

[0027] The initial position parameters of the sample collection time period are filtered and averaged to obtain the relative position parameters of the positioning module corresponding to the sample collection time period.

[0028] In one embodiment, the current measurement value of the current-carrying conductor is determined according to the relative position parameters corresponding to each positioning module in the target collection time period and the magnetic induction intensity data collected by the magnetic sensitive chip, including:

[0029] Perform consistency comparison and verification on the relative position parameters of each positioning module corresponding to the target acquisition time period;

[0030] If the consistency control verification is passed, then verify whether the position of the quantum current sensor is shifted as a whole;

[0031] If no offset occurs, the current measurement value of the current-carrying conductor corresponding to the target collection time period is determined according to the relative position parameters of each positioning module corresponding to the target collection time period and the magnetic induction intensity data collected by the magnetic sensitive chip;

[0032] If an offset occurs, the relative position parameters of each positioning module corresponding to the target acquisition time period are corrected, and the current measurement value of the current-carrying conductor corresponding to the target acquisition time period is determined based on the corrected relative position parameters of each positioning module corresponding to the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0033] In one embodiment, the relative position parameters of each positioning module corresponding to the target acquisition time period are corrected, including:

[0034] Obtaining interference factors in the current current measurement environment; wherein the interference factors include at least one of vibration interference or magnetic field interference;

[0035] According to the compensation method corresponding to the interference factor, the relative position parameters of each positioning module corresponding to the target acquisition time period are corrected.

[0036] In one embodiment, verifying whether the position of the quantum current sensor has shifted overall includes:

[0037] Verify the relative position parameters of each positioning module corresponding to the target acquisition time period, as well as the relative position parameters of each positioning module corresponding to other acquisition time periods, to determine whether the position of the quantum current sensor is shifted as a whole.

[0038] In one embodiment, the type of the quantum magnetic sensitive chip can be at least one of a Hall magnetic sensitive chip, a TMR magnetic sensitive chip and an NV color center quantum magnetic sensitive chip.

[0039] In one embodiment, the positioning module collects the relative position parameters of the quantum magnetic sensitive chip with respect to the current-carrying conductor in any of the following ways:

[0040] Analyze the image containing the quantum magnetic sensitive chip and the current-carrying conductor to obtain relative position parameters;

[0041] Transmitting ultrasonic signals to the quantum magnetic sensitive chip and the current-carrying conductor, and determining relative position parameters based on the reflected signals of the quantum magnetic sensitive chip and the current-carrying conductor;

[0042] emitting an infrared beam to the quantum magnetic sensitive chip and the current-carrying conductor, and determining relative position parameters based on the reflected beams from the quantum magnetic sensitive chip and the current-carrying conductor;

[0043] The first magnetic field corresponding to the quantum magnetic sensitive chip and the second magnetic field of the current-carrying conductor are collected, and the relative position parameters are determined based on the first magnetic field and the second magnetic field.

[0044] In a second aspect, a current measuring device is provided, which is applied to a quantum current sensor, and the device comprises:

[0045] An acquisition module is used to acquire magnetic induction intensity data collected by a quantum magnetic sensitive chip in the quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by a positioning module in the quantum current sensor;

[0046] The current measurement module is used to determine the current measurement value of the current-carrying conductor according to the relative position parameters and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0047] In a third aspect, a quantum current sensor is provided, comprising a memory and a processing unit, wherein the memory stores a computer program, and the processing unit implements the steps of the above current measurement method when executing the computer program.

[0048] In a fourth aspect, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processing unit, the steps of the above-mentioned current measurement method are implemented.

[0049] The above-mentioned current measurement method, device and quantum current sensor collect magnetic induction intensity data through quantum magnetic sensitive chips, and use the high sensitivity and precision of quantum effects to significantly improve the accuracy of current measurement. Quantum sensors usually have extremely high sensitivity and resolution, and can detect tiny magnetic field changes, thereby more accurately reflecting the current situation of the current-carrying conductor. This method uses quantum magnetic sensitive chips and positioning modules to measure current without directly contacting the current-carrying conductor. This non-contact measurement method avoids interference factors such as contact resistance and thermal effects that may be introduced in traditional current measurement methods, and improves the reliability and safety of measurement. The relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor are collected by the positioning module, which can not only measure the magnitude of the current, but also provide the position information of the current in space. This method combines the high sensitivity of the quantum magnetic sensitive chip and the positioning capability of the positioning module, making the current measurement more flexible. It can be measured in different environments, different conductor shapes and sizes, and has strong adaptability. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the drawings required for use in the embodiments of the present application or related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0051] Figure 1 is a schematic flow chart of a current measurement method in one embodiment;

[0052] Figure 2 A schematic diagram of a quantum current sensor for current measurement in one embodiment;

[0053] Figure 3 A schematic diagram of a flow chart of a step of determining a current measurement value of a current-carrying conductor in one embodiment;

[0054] Figure 4It is a flowchart of a step of performing consistency verification on relative position parameters of the quantum magnetic sensitive chip with respect to the current-carrying conductor collected by each positioning module in one embodiment;

[0055] Figure 5 A schematic flow chart of a step of obtaining the interference type in the environment where the quantum current sensor is located in one embodiment;

[0056] Figure 6 A schematic diagram of a quantum current sensor for current measurement in another embodiment;

[0057] Figure 7 A schematic diagram of determining relative position parameters in one embodiment;

[0058] Figure 8 A schematic diagram of determining relative position parameters in another embodiment;

[0059] Fig. 9 A schematic diagram of determining relative position parameters in another embodiment;

[0060] Fig.10 is a schematic diagram of current measurement in a copper busbar in one embodiment;

[0061] Fig.11 FIG. 4 is a structural block diagram of a current measuring device in an embodiment. DETAILED DESCRIPTION

[0062] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0063] The present application provides a current measurement method, which is applied to a quantum current sensor, wherein at least one magnetic sensitive chip and at least one positioning module are installed in the quantum current sensor; the method comprises:

[0064] Step 101, obtaining magnetic induction intensity data collected by a quantum magnetic sensitive chip in a quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to a current-carrying conductor collected by a positioning module in the quantum current sensor.

[0065] Among them, the quantum current sensor is a sensor for measuring current. It is based on quantum technology to achieve high-precision current measurement. The quantum magnetic sensitive chip is one of the core components of the quantum current sensor. It is highly sensitive to magnetic fields. During the operation of the quantum current sensor, when current passes through the current-carrying conductor, a magnetic field is generated around it. The quantum magnetic sensitive chip can accurately sense this magnetic field and convert the information of the magnetic field strength into an electrical signal or other data form that can be processed by subsequent circuits.

[0066] Furthermore, when current flows through a current-carrying conductor, according to Ampere's law, a magnetic field is generated in the space around it. Magnetic induction intensity is a physical quantity that describes the strength and direction of a magnetic field. The magnetic induction intensity data collected by the quantum magnetic sensitive chip is information about the intensity (usually in Tesla, T) and direction (expressed as a space vector) of the magnetic field around the current-carrying conductor. These data are crucial for the subsequent calculation of the current in the current-carrying conductor, because there is a definite physical relationship between current and magnetic field (such as the Biot-Savart law), and the current can be indirectly inferred by measuring the magnetic induction intensity.

[0067] It is understandable that the main function of the positioning module inside the quantum current sensor is to determine the position of the quantum magnetic sensitive chip relative to the current-carrying conductor. It can use a variety of technologies, such as optical positioning, electromagnetic positioning, or positioning methods based on other physical principles. Its purpose is to accurately obtain the position information of the quantum magnetic sensitive chip in space, so as to accurately calculate the current in the current-carrying conductor in combination with the magnetic induction intensity data.

[0068] Furthermore, the relative position parameters describe the spatial position relationship between the quantum magnetic sensitive chip and the current-carrying conductor. These parameters may include information such as distance and angle. For example, the distance parameter represents the straight-line distance between the quantum magnetic sensitive chip and the central axis or surface of the current-carrying conductor. This distance will affect the measured value of the magnetic induction intensity, because the magnetic field intensity will weaken as the distance increases (following a certain magnetic field distribution law, such as for a long straight current-carrying conductor, the magnetic field intensity is inversely proportional to the distance). The angle parameter may represent the azimuth of the quantum magnetic sensitive chip relative to the current-carrying conductor. At different azimuths, the direction of the magnetic field is different relative to the induction direction of the chip, which will also affect the chip's measurement of the magnetic field intensity and subsequent current calculations. Accurate relative position parameters are critical for accurate current measurement, because only on the basis of knowing these positional relationships can the current magnitude be accurately deduced from the magnetic induction intensity data based on magnetic field theory.

[0069] Step 102, determining the current measurement value of the current-carrying conductor according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0070] According to the Biot-Savart law, for a given current-carrying conductor, the magnetic field strength it generates in space is related to factors such as the current size, the shape of the conductor, and the distance from the observation point (here, the location of the quantum magnetic sensitive chip) to the conductor. For current-carrying conductors of simple geometric shapes (such as long straight wires, circular coils, etc.), the relationship between magnetic field strength and current can be described by the corresponding magnetic field calculation formula:

[0071] For example, for an infinitely long straight current-carrying wire, the magnetic induction intensity of the magnetic field around it is Where u0 is the vacuum magnetic permeability, I is the current in the wire, and r is the distance from the observation point to the wire. The relative position parameter obtained in step 101 includes this distance and the value of the magnetic induction intensity collected by the quantum magnetic sensitive chip. The current can be calculated using this formula

[0072] If the current-carrying conductor is a circular coil, the magnetic induction intensity at a point on its axis is Where N is the number of turns in the coil, R is the radius of the coil, and x is the distance from the point on the axis to the center of the coil (this information can be included in the relative position parameters). Similarly, if the magnetic induction intensity B and these position parameters are known, the current I can be inferred.

[0073] For example, Figure 2 As shown, a plurality of quantum magnetic sensitive chips are installed in the quantum current sensor, and each quantum magnetic sensitive chip is installed on the same straight line in the quantum current sensor, and the magnetic sensitive directions of each quantum magnetic sensitive chip are in the same direction. For example, three quantum magnetic sensitive chips are installed in the quantum current sensor, namely, quantum magnetic sensitive chip 1, quantum magnetic sensitive chip 2 and quantum magnetic sensitive chip 3; the magnetic induction intensity data collected by each quantum magnetic sensitive chip are B1, B2 and B3 respectively.

[0074] When designing a quantum current sensor, the design parameters are specifically as follows: the distance between quantum magnetic sensitive chip 1 and quantum magnetic sensitive chip 2 is m, and the distance between quantum magnetic sensitive chip 1 and quantum magnetic sensitive chip 3 is n; B1, B2, and B3 are the magnetic induction intensities measured by the three quantum magnetic sensitive chips respectively; x1, x2, and x3 are the distances from quantum magnetic sensitive chips 1, 2, and 3 to the long straight wire respectively; it is assumed that the common perpendicular line segment between the current-carrying conductor and the chip straight line is d; the plane passing through the straight line where the quantum magnetic sensitive chip is located and perpendicular to the perpendicular line segment d is s; θ1, θ2, and θ3 are the angles between the perpendicular line from the quantum magnetic sensitive chip 1, 2, and 3 to the current-carrying conductor and the plane s respectively, and the angle between the current-carrying conductor and the normal plane of the quantum current sensor straight line is α.

[0075] Among them, B1, B2, B3, m, and n are known quantities, and x1, x2, x3, θ1, θ2, θ3, α, and d are unknown quantities. Suppose the current on the current-carrying conductor is I x .

[0076] In conventional technology, the current I is calculated x The method is:

[0077] make Where u0 is the vacuum permeability. According to the Biot-Saffar law and Figure 1 The spatial geometric relationship of the positions shown in can be obtained from the following equations (1) to (6):

[0078]

[0079]

[0080] make:

[0081]

[0082] make:

[0083]

[0084] From the above formula (7) and formula (8), we can get:

[0085]

[0086] Further we can get:

[0087]

[0088] It is understandable that when the current value needs to be calculated, if formula (10) is used directly, the calculation amount is relatively complicated, especially when the sampling rate is high. In order to ensure the real-time output of the data, the calculation needs to be completed in each sampling interval, which consumes a lot of computing resources and requires a high-performance processor and a large power supply.

[0089] It is understandable that after determining the target relative position parameters, the current value can be determined according to the above formulas (1)-(10); however, due to the influence of environmental vibration, installation deviation, external interference, etc., there may be deviations in positioning by fixing the size of the quantum current sensor and the position of the current-carrying conductor, that is, there may be errors in the target relative position parameters, resulting in a certain error in the measured current size. Therefore, during the use of the quantum current sensor, it is necessary to calibrate the target relative position parameters at the measurement time according to the current value measured at the historical moment. Among them, the measurement time is located after each historical moment.

[0090] This can achieve the inversion of magnetic field-current, and further:

[0091]

[0092] It can be understood that according to formula (9) and the specific position relationship between the first quantum magnetic sensitive chip, the second single quantum magnetic sensitive chip and the third quantum magnetic sensitive chip, the solution that conforms to the actual physical meaning can be obtained. That is, the spatial relative position of the third quantum magnetic sensitive chip and the current-carrying conductor. The left side of equations (11), (12), and (13) are defined as the spatial relative positions W1, W2, and W3 of the three quantum magnetic sensitive chips and the current-carrying conductor, that is, the relative position parameters in this embodiment.

[0093] The above-mentioned current measurement method collects magnetic induction intensity data through quantum magnetic sensitive chips, and utilizes the high sensitivity and precision of quantum effects to significantly improve the accuracy of current measurement. Quantum sensors usually have extremely high sensitivity and resolution, and can detect tiny magnetic field changes, thereby more accurately reflecting the current situation of current-carrying conductors. This method uses quantum magnetic sensitive chips and positioning modules to measure current without directly contacting current-carrying conductors. This non-contact measurement method avoids interference factors such as contact resistance and thermal effects that may be introduced in traditional current measurement methods, and improves the reliability and safety of measurement. The relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor are collected by the positioning module, which can not only measure the magnitude of the current, but also provide the position information of the current in space. This method combines the high sensitivity of the quantum magnetic sensitive chip and the positioning capability of the positioning module, making the current measurement more flexible. It can be measured in different environments, different conductor shapes and sizes, and has strong adaptability.

[0094] In an exemplary embodiment, the quantum current sensor further includes a first processing unit, which is used to obtain relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor at different collection times.

[0095] It is understandable that different acquisition moments emphasize the diversity in the time dimension. Because in practical applications, the relative position of the current-carrying conductor and the quantum current sensor may change over time due to various factors (such as environmental vibration, equipment movement, etc.). By collecting relative position parameters at multiple different times, we can have a more comprehensive understanding of this change, thereby providing richer information for subsequent data analysis and processing. For example, in a long-running power monitoring scenario, it may be necessary to collect relative position parameters at regular intervals (such as every second, every minute, etc.) in order to track the status in real time.

[0096] The relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor may include:

[0097] Distance parameter: This refers to the straight-line distance between the quantum magnetic sensitive chip and the current-carrying conductor. The change in distance will affect the magnetic induction intensity sensed by the chip. According to physical principles such as the Biot-Savart law, the magnetic induction intensity is inversely proportional to the square of the distance (for some simple current-carrying conductor models). Therefore, it is very important to accurately obtain the distance parameter for calculating the current value based on the magnetic induction intensity data. For example, when the distance between the chip and the current-carrying conductor changes from 10 cm to 20 cm, the sensed magnetic induction intensity will decrease significantly, which will affect the calculation result of the current.

[0098] Angle parameters: may include azimuth, elevation and other angle information between the chip and the current-carrying conductor. Different angles will cause different components of the magnetic field in the sensing direction of the chip, thus affecting the magnetic induction intensity data collected by the chip. For example, when the relative angle between the chip and the current-carrying conductor changes, the effective magnetic induction intensity sensed by the chip will change even if the distance remains unchanged. These angle parameters together with the distance parameters constitute the complete relative position information, which provides the necessary conditions for accurate calculation of current.

[0099] Other geometric relationships: In addition to distance and angle, some other geometric information related to spatial position may also be included, such as the relative position relationship between the straight line where the chip is located and the straight line where the current-carrying conductor is located (parallel, intersecting, etc.), the coordinates of the chip in a specific coordinate system, etc. Although these geometric relationships may not directly affect the calculation of magnetic induction intensity like distance and angle, they may play an auxiliary role in some complex models or data analysis, helping to more accurately understand and process the state and changes of the entire measurement.

[0100] In an exemplary embodiment, Figure 3 As shown, according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip, the current measurement value of the current-carrying conductor is determined, including:

[0101] S301, using the second processing unit to select a target moment from among various collection moments.

[0102] It is understandable that the second processing unit selects the target moment from each acquisition moment, and its selection can be based on a variety of factors. For example, data quality is an important factor. If the data collected at a certain moment is less disturbed and has lower noise, then the data quality at this moment may be higher and it is more likely to be selected as the target moment; signal stability is also key. If the signal fluctuation is small and relatively stable at a certain moment, then this moment may also be given priority. In addition, it may also be based on other relevant criteria, such as specific needs, synchronization requirements with other devices or data, etc.

[0103] For example, suppose that in an electric power monitoring, data is collected once a second. During a certain period of time, it is found that the fluctuation range of the magnetic induction intensity data collected at the 30th second is significantly smaller than that at other times, and the signal strength is stable at a higher level, then the second processing unit may determine the 30th second as the target time.

[0104] S302, determining a current measurement value of the current-carrying conductor according to the relative position parameter corresponding to the target time and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0105] Optionally, after determining the target time, the second processing unit extracts data points corresponding to the target time from the magnetic induction intensity data collected by the magnetic sensitive chip. For example, if the target time is the 30th second, then the magnetic induction intensity values ​​B1, B2, and B3 collected by chip 1, chip 2, and chip 3 at the 30th second are found.

[0106] The current is calculated by a predetermined algorithm or physical model using the relative position parameters at the target moment (such as the distances x1, x2, x3, angles θ1, θ2, θ3, and other related geometric parameters mentioned above) and the corresponding magnetic induction intensity data. The physical model mentioned here is the Biot-Savart law, which describes the relationship between current and magnetic field. Taking a long straight current-carrying conductor as an example, the relevant formulas (such as the formulas mentioned above) can be derived based on the Biot-Savart law. Substituting the specific parameters at the target moment into these formulas, the current measurement value of the current-carrying conductor at that moment can be calculated.

[0107] In this way, the embodiment not only improves the accuracy of current measurement, but also enhances the stability and reliability of measurement by selecting the best data points at different acquisition moments. The dual processing unit design also helps to share the computational load and improve the overall response speed and efficiency.

[0108] In an exemplary embodiment, if the number of target moments is greater than one, the current measurement value of the current-carrying conductor is determined based on the relative position parameters corresponding to the target moments and the magnetic induction intensity data collected by the magnetic sensitive chip, including: processing the relative position parameters corresponding to each target moment to obtain the mean position parameter.

[0109] Specifically, for each target moment, there is a corresponding relative position parameter (these parameters describe the position of the quantum magnetic sensitive chip relative to the current-carrying conductor). First, the relative position parameters of these different target moments are processed. The processing method can be to calculate the average value of these parameters to obtain a mean position parameter. This mean position parameter represents the average position of the chip relative to the current-carrying conductor at all target moments. The mean position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip determine the current measurement value of the current-carrying conductor.

[0110] The benefit of this method is that it can collect and process data at multiple time points, thus reducing the impact of accidental errors on the measurement results. By calculating the average of the relative position parameters at multiple target moments, a more stable and reliable measurement benchmark can be obtained, and thus a more accurate current measurement value can be obtained. This is especially important for application scenarios that require long-term monitoring or high-precision measurement.

[0111] In an exemplary embodiment, Figure 4As shown, if the number of the positioning modules is at least two, the method further includes:

[0112] S401, verifying the consistency of the relative position parameters of the quantum magnetic sensitive chip with respect to the current-carrying conductor collected by each positioning module.

[0113] It is understandable that different positioning modules should give similar or identical results for the relative position of the quantum magnetic sensitive chip relative to the current-carrying conductor. If the data they collect are very different, it may mean that one or some positioning modules are faulty, interfered or have other problems, resulting in inaccurate data.

[0114] S402: If the consistency verification is passed, the current measurement value of the current-carrying conductor is determined according to the relative position parameters collected by any positioning module and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0115] Optionally, when the consistency verification is passed, that is, the relative position parameters collected by each positioning module are consistent with each other within an acceptable range, it means that the data of these positioning modules are reliable. When the relative position parameters collected by any positioning module are selected, combined with the magnetic induction intensity data collected by the magnetic sensitive chip, the current measurement value of the current-carrying conductor is calculated according to the formula based on the physical model (such as the Biot-Savart law) mentioned above.

[0116] It is understandable that the purpose of this step is to check whether the position data provided by different positioning modules are consistent with each other to ensure the accuracy and reliability of the data. This means that the position data provided by each positioning module is consistent, and the relative position parameters collected by any positioning module can be selected and combined with the magnetic induction intensity data collected by the magnetic sensitive chip to determine the current measurement value of the current-carrying conductor.

[0117] S403: If the consistency verification fails, check whether the relative position parameters collected at the next collection time are consistent.

[0118] It is understandable that if the first consistency verification fails, it means that the relative position parameters provided by each positioning module at the current acquisition time are quite different, and the reliability is questionable. At this time, the fault will not be immediately determined or complex measures will be taken, but the next acquisition time will be waited for to perform consistency verification on the relative position parameters collected by each positioning module again. This is because occasional anomalies may be caused by momentary interference, and collecting data again will help determine whether the anomaly persists.

[0119] S404: If the relative position parameters collected at the next collection time are inconsistent, reselect the relative position parameters from the relative position parameters collected by each positioning module and verified for consistency, and determine whether the overall position of the quantum current sensor is offset.

[0120] It is understandable that when the relative position parameters collected at the next collection moment are still inconsistent, reliable parameters will be re-selected from the relative position parameters collected by the previous positioning modules and verified for consistency. For example, the positioning module data of multiple moments in the past are recorded, and the data at which moments have passed the consistency verification are marked. When the current data continues to be abnormal, appropriate parameters are selected from these reliable data.

[0121] If the relative position parameters still show inconsistency after reselection, it will be determined that the overall position of the quantum current sensor has shifted. This is because the continued inconsistency is unlikely to be caused by interference alone, but more likely that the position of the sensor itself has changed. For example, physical vibrations may change the position of the sensor, resulting in confusion in the relative position parameters collected by each positioning module. Once the position offset is determined, the automatic correction mechanism may be triggered, such as trying to adjust the sensor to the correct position through the built-in adjustment device; if automatic correction is not possible, a warning will be issued to the user, prompting manual correction.

[0122] Specifically: Check the data at the next collection moment: If the consistency verification fails, wait for the next collection moment and check again whether the relative position parameters collected by each positioning module are consistent.

[0123] Optionally, if the relative position parameters collected at the next collection moment are consistent, it means that the inconsistency is not caused by hardware problems such as sensor position offset, but by errors in the data at the collection moment. For example, there may be a momentary strong electromagnetic interference at the moment, which affects the data collection of one or more positioning modules, but the interference does not continue to the next moment.

[0124] Furthermore, the method also includes: if the relative position parameters collected at the next collection moment are consistent, determining that the data at the collection moment is error data.

[0125] It is understandable that when it is found that the relative position parameters collected by each positioning module at the next collection moment are consistent, but there is inconsistency at the previous collection moment, the data at the collection moment can be judged as error data. This shows that this inconsistency is not caused by problems such as sensor position offset, but is caused by some interference at a specific moment. For example, at a certain moment, a strong electromagnetic device is suddenly turned on in the surrounding area, which instantly interferes with the data collection of the positioning module, and at the next moment the interference disappears, and the data collected by each positioning module becomes consistent again, but the data at the previous interference moment is no longer accurate, so it is judged as error data.

[0126] Further, such as Figure 5 As shown, the method also includes:

[0127] S501: If it is determined that the data at the acquisition time is error data, the interference type in the environment where the quantum current sensor is located is obtained.

[0128] Optionally, try to determine the type of interference in the environment where the quantum current sensor is located. Common types of interference include electromagnetic interference, mechanical vibration, temperature change, etc. The type of interference may be obtained in a variety of ways. For example, the sensor itself may integrate some environmental monitoring functions, such as electromagnetic strength detection module, vibration sensor, temperature sensor, etc., and the relevant environmental parameters can be directly obtained to determine the type of interference. In addition, the data characteristics collected by the positioning module can also be analyzed. Different types of interference may cause different patterns of abnormalities in the data. For example, electromagnetic interference may cause large fluctuations in relative position parameters, while mechanical vibration may cause parameters to change rapidly in a short period of time with a certain periodicity.

[0129] S502: Determine the compensation amount corresponding to each positioning module according to the interference type.

[0130] Optionally, based on the identified interference type, a corresponding compensation amount will be determined for each positioning module. These compensation amounts are based on previous research and experimental data on the performance of positioning modules under similar interference conditions. During the R&D and testing phase, simulation experiments will be conducted on different types of interference to record the deviation of the data of each positioning module under different interference intensities.

[0131] S503: Based on the compensation amount, the relative position parameters collected by each positioning module are corrected.

[0132] Optionally, after the compensation amounts are determined, the relative position parameters collected by each positioning module at the time of the error data are corrected based on the compensation amounts.

[0133] In this embodiment, according to the identified interference type, a corresponding compensation amount is determined for each positioning module. These compensation amounts are based on previous research and experimental data on the performance of positioning modules under similar interference conditions. Using the determined compensation amount, the relative position parameters collected by each positioning module at the time of the error data are corrected to eliminate or reduce the impact of the interference.

[0134] In an exemplary embodiment, the method further includes: verifying whether the interference type causes interference to the magnetic induction intensity data collected by the magnetic sensitive chip; if so, correcting the magnetic induction intensity data.

[0135] Correspondingly, the current measurement value of the current-carrying conductor is determined according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip, including: determining the current measurement value of the current-carrying conductor according to the relative position parameter and the corrected magnetic induction intensity data.

[0136] Verify the impact of interference on magnetic induction intensity data: Check whether the identified interference type may also interfere with the magnetic induction intensity data collected by the magnetic sensitive chip. Correct the magnetic induction intensity data: If the verification results show that the interference does affect the magnetic induction intensity data, the data will be corrected accordingly. Correction methods may include filtering, removing outliers, or replacing the interfered data points with model-based prediction values. Finally, based on the corrected relative position parameters and magnetic induction intensity data, use a physical model (such as the Biot-Savart law) or a pre-trained algorithm model to determine the current measurement value of the current-carrying conductor. In this way, more accurate and reliable current measurements can be obtained even in the presence of external interference.

[0137] Through these steps, the embodiment can maintain the accuracy and stability of current measurement in the face of various environmental interferences, which is very important for quantum current sensors operating in complex and changing environments.

[0138] For example, generally speaking, when the quantum current sensor is installed, its spatial position with the current-carrying conductor is relatively fixed. Taking the third quantum magnetic sensitive chip as an example, the left side of formula (11) can be regarded as a constant. The quantum current sensor can be initialized before formal measurement, and multiple groups of W1 can be calculated through multiple measurement sampling. Data processing of W1, such as calculating the average value, filtering, etc., can be performed to obtain a more accurate During formal measurement, the current magnetic field measurement values ​​B3 and The current value can be quickly obtained through simple calculations, saving computing resources and reducing processor requirements and power consumption.

[0139] Let the current in the current-carrying conductor be I x ,make Extending the above (1)-(6) to four chips, we can get the following equations (14)-(21):

[0140]

[0141]

[0142] like Figure 6As shown, the interference magnetic fields Bg1, Bg2, Bg3, and Bg4 received by the four quantum magnetic sensitive chips may be the same or different. Through the artificial intelligence algorithm, the physical laws of the spatial arrangement of quantum magnetic sensitive chips are learned, and the influence of the interference magnetic field is corrected by the algorithm so that W41=W42 (the same applies to other chips), which completely eliminates the influence of the interference magnetic field, or minimizes the variance between the four groups of W41 and W42, W31 and W32, W21 and W22, and W11 and W12. The corrected W data is used for current calculation, which weakens the influence of the external interference magnetic field on the current measurement to a certain extent.

[0143] In an exemplary embodiment, the type of the quantum magnetic sensitive chip may be at least one of a Hall magnetic sensitive chip, a TMR magnetic sensitive chip, and an NV color center quantum magnetic sensitive chip.

[0144] In an exemplary embodiment, the positioning module collects the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor in any of the following ways:

[0145] Analyze the image containing the quantum magnetic sensitive chip and the current-carrying conductor to obtain relative position parameters;

[0146] like Figure 7 As shown, ultrasonic signals are emitted to the quantum magnetic sensitive chip and the current-carrying conductor, and the relative position parameters are determined based on the reflected signals of the quantum magnetic sensitive chip and the current-carrying conductor;

[0147] like Figure 8 As shown, an infrared beam is emitted to the quantum magnetic sensitive chip and the current-carrying conductor, and a relative position parameter is determined based on the reflected beam of the quantum magnetic sensitive chip and the current-carrying conductor;

[0148] like Fig. 9 As shown, the first magnetic field corresponding to the quantum magnetic sensitive chip and the second magnetic field of the current-carrying conductor are collected, and the relative position parameters are determined based on the first magnetic field and the second magnetic field.

[0149] Furthermore, the idea of ​​determining the current based on the magnetic field in the current measurement method is applied to the current measurement scenario in the copper busbar as an example:

[0150] like Fig.10 As shown in the figure, it is assumed that the copper bar is infinitely long in the z-axis direction, the width in the x-axis direction is a, the thickness in the y-axis direction is much smaller than a and can be ignored, and the current direction of the copper bar is parallel to the z-axis. It is assumed that the current is evenly distributed on the copper bar.

[0151] Divide the flat conductor into an infinite number of thin strips with a width of , then the current in each thin strip is , and the magnetic field generated by the current on the thin strip at x at the point (x0, y0) is formula (22):

[0152]

[0153] The component of the magnetic field in the x-axis direction is given by equation (23):

[0154]

[0155] The component on the y-axis is formula (24):

[0156]

[0157] Therefore, the magnetic field in the x-axis direction at the point (x0, y0) is expressed as (25):

[0158]

[0159] The magnetic field in the y-axis direction at point (x0, y0) is expressed as (26):

[0160]

[0161] It can be seen from the formula that when the magnetic quantum current sensor is located on the mid-axis plane of the copper bar parallel to the z-axis, that is, the magnetic fields in the x-axis and y-axis directions are respectively expressed as formula (27):

[0162]

[0163] Formula (27) shows that when the magnetic quantum current sensor is located on the mid-axis plane of the copper busbar parallel to the z-axis, there is only a magnetic field in the x-axis direction. Therefore, a uniaxial magnetic quantum current sensor can be used, and the magnetic sensitivity direction of the quantum current sensor can be adjusted to the same direction as the x-axis. The magnetic field generated by the copper busbar current can be measured, and the current of the copper busbar can be inferred.

[0164] Since the width a of the copper busbar can be obtained from the nameplate parameters of the copper busbar or directly measured, and the distance y0 between the quantum current sensor and the copper busbar is not easy to obtain, when designing the measurement scheme, two quantum current sensors are arranged along the y-axis on the central axis of the copper busbar. The distance d between the two quantum current sensors is easy to obtain and is a known quantity. Therefore, there are equations (28) and (30):

[0165]

[0166] According to equation (28) and equation (30), the unknown quantities y1, y2, and I can be calculated.

[0167] From multiple sets of measurement data, multiple sets of y1 and y2 can be calculated. The average of multiple sets of y1 is obtained. We can obtain the average of multiple groups of y2 by Will Substituting into equation (27) or equation (28), the corresponding current value can be obtained according to the current magnetic field B.

[0168] The calculation of the average value or can realize the precise positioning of the quantum current sensor and the conductor to be measured, and optimize the current measurement result through the average value algorithm, and can still adapt well when the quantum current sensor is offset. The calculation of the average value and the calculation of the current can be carried out simultaneously, and the data processing process does not affect the real-time current measurement.

[0169] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0170] In an exemplary embodiment, Fig.11 As shown, a current measuring device is provided, which is applied to a quantum current sensor, and the device comprises:

[0171] An acquisition module 11 is used to acquire magnetic induction intensity data collected by a quantum magnetic sensitive chip in the quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by a positioning module in the quantum current sensor;

[0172] The current measurement module 12 is used to determine the current measurement value of the current-carrying conductor according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip.

[0173] Based on the same inventive concept, the embodiment of the present application also provides a current measuring device for implementing the current measuring method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more current measuring device embodiments provided below can refer to the limitations on the current measuring method above, and will not be repeated here.

[0174] In an exemplary embodiment, a quantum current sensor is provided, the structure of which is as follows: Figure 2 shown.

[0175] In an exemplary embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processing unit, the steps of the above current measurement method are implemented.

[0176] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile memory and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, an artificial intelligence (AI) processor, etc., but are not limited to this.

[0177] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this application.

[0178] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A current measurement method, characterized in that: Applied to a quantum current sensor, the method comprises: Acquire magnetic induction intensity data collected by a quantum magnetic sensitive chip in a quantum current sensor and relative position parameters of the quantum magnetic sensitive chip relative to a current-carrying conductor collected by a positioning module in the quantum current sensor; The current measurement value of the current-carrying conductor is determined according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip.

2. The method according to claim 1, characterized in that The step of obtaining the magnetic induction intensity data collected by the quantum magnetic sensitive chip in the quantum current sensor and the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor includes: Acquire the magnetic induction intensity data collected by the quantum magnetic sensitive chip in the quantum current sensor and the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor within the target collection time period; According to the relative position parameter in the target acquisition time period and the magnetic induction intensity data acquired by the magnetic sensitive chip, a current measurement value of the current-carrying conductor corresponding to the target acquisition time period is determined.

3. The method according to claim 1, characterized in that: The number of the positioning modules is at least one; accordingly, the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor during the target collection time period are obtained; including: Determine the fusion position parameter corresponding to the target acquisition time period according to the relative position parameters corresponding to each positioning module corresponding to the target acquisition time period; The current measurement value of the current-carrying conductor is determined according to the fusion position parameter corresponding to the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip within the target acquisition time period.

4. The method according to claim 2, characterized in that: Any positioning module includes at least one positioning chip; the step of obtaining the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module in the quantum current sensor includes: For any positioning module, obtain the lower-level position parameters collected by each positioning chip in the positioning module; According to each subordinate position parameter, the relative position parameter of the quantum magnetic sensitive chip with respect to the current-carrying conductor collected by the positioning module is determined.

5. The method according to claim 4, characterized in that Determining the relative position parameters of the quantum magnetic sensitive chip collected by the positioning module relative to the current-carrying conductor according to each subordinate position parameter includes: Perform fusion processing on each subordinate position parameter to obtain a subordinate fusion parameter; The lower-level fusion parameters are determined as the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by the positioning module.

6. The method according to claim 2, characterized in that The method comprises: Using the first thread, the initial position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor collected by each positioning module in a plurality of different sample collection time periods are obtained; wherein any sample collection time period includes at least one collection moment; For any positioning module, the initial position parameters collected by the positioning module in any sample collection time period are used as the initial position set of the positioning module; According to the initial position set corresponding to each positioning module in the sample collection time period, the relative position parameter corresponding to the positioning module in the sample collection time period is determined.

7. The method according to claim 6, characterized in that Determining the current measurement value of the current-carrying conductor according to the relative position parameter and the magnetic induction intensity data collected by the magnetic sensitive chip includes: A second thread is used to determine the current measurement value of the current-carrying conductor according to the relative position parameters corresponding to each positioning module in the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip; wherein the target acquisition time period is at least two acquisition time periods selected from each sample acquisition time period.

8. The method according to claim 6, characterized in that The determining, according to the initial position set corresponding to each positioning module in the sample collection time period, the relative position parameter corresponding to the positioning module in the sample collection time period includes: The initial position parameters of the sample collection time period are filtered and averaged to obtain the relative position parameters of the positioning module corresponding to the sample collection time period.

9. The method according to claim 6, characterized in that Determining the current measurement value of the current-carrying conductor according to the relative position parameters corresponding to each positioning module in the target collection time period and the magnetic induction intensity data collected by the magnetic sensitive chip includes: Perform consistency comparison and verification on the relative position parameters of each positioning module corresponding to the target acquisition time period; If the consistency control verification is passed, verify whether the position of the quantum current sensor is overall shifted; If no offset occurs, the current measurement value of the current-carrying conductor corresponding to the target collection time period is determined according to the relative position parameters of each positioning module corresponding to the target collection time period and the magnetic induction intensity data collected by the magnetic sensitive chip; If an offset occurs, the relative position parameters of each positioning module corresponding to the target acquisition time period are corrected, and the current measurement value of the current-carrying conductor corresponding to the target acquisition time period is determined based on the corrected relative position parameters of each positioning module corresponding to the target acquisition time period and the magnetic induction intensity data collected by the magnetic sensitive chip.

10. The method according to claim 9, characterized in that The correcting of the relative position parameters of each positioning module corresponding to the target acquisition time period includes: Obtaining interference factors in the current current measurement environment; wherein the interference factors include at least one of vibration interference or magnetic field interference; According to the compensation method corresponding to the interference factor, the relative position parameters of each positioning module corresponding to the target collection time period are corrected.

11. The method according to claim 9, characterized in that The verifying whether the position of the quantum current sensor is shifted as a whole comprises: Verify the relative position parameters of each positioning module corresponding to the target acquisition time period and the relative position parameters of each positioning module corresponding to other acquisition time periods to determine whether the position of the quantum current sensor is overall offset.

12. The method according to claim 1, characterized in that The type of the quantum magnetic sensitive chip may be at least one of a Hall magnetic sensitive chip, a TMR magnetic sensitive chip and an NV color center quantum magnetic sensitive chip.

13. The method according to claim 1, characterized in that The positioning module may collect the relative position parameters of the quantum magnetic sensitive chip relative to the current-carrying conductor in any of the following ways: Analyzing an image including the quantum magnetic sensitive chip and the current-carrying conductor to obtain the relative position parameter; Transmitting ultrasonic signals to the quantum magnetic sensitive chip and the current-carrying conductor, and determining the relative position parameter based on the reflected signals of the quantum magnetic sensitive chip and the current-carrying conductor; emitting an infrared light beam toward the quantum magnetic sensitive chip and the current-carrying conductor, and determining the relative position parameter based on the reflected light beams of the quantum magnetic sensitive chip and the current-carrying conductor; The first magnetic field corresponding to the quantum magnetic sensitive chip and the second magnetic field of the current-carrying conductor are collected, and the relative position parameter is determined based on the first magnetic field and the second magnetic field.

14. A quantum current sensor, comprising a memory and a processing unit, wherein the memory stores a computer program, characterized in that: When the processing unit executes the computer program, the steps of the method according to any one of claims 1 to 13 are implemented.

15. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processing unit, the steps of the method according to any one of claims 1 to 13 are implemented.

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