High-temperature blocking test circuit, test device and test method

Abstract

The present application provides a high-temperature blocking test circuit, a test device and a test method. The circuit includes an AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch that are electrically connected. When the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is open and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. By controlling the access of different voltage sources, the circuit realizes the screening and reliability tests of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular, to a high-temperature blocking test circuit, a high-temperature blocking test device, and a method for testing a power semiconductor device. Background Art

[0002] Power semiconductor devices are the core for power conversion in large-capacity power electronic equipment. The reliability of the devices determines the long-term operation reliability of the equipment. Among them, the high-temperature blocking test is used to verify the voltage tolerance performance of the devices in a high-temperature environment, and it is an important criterion for system reliability and safety. Conducting early failure screening and reliability testing of high-temperature blocking tests for power semiconductor devices can, on the one hand, discover the weak links and deficiencies of the products at high temperatures, and then improve the product design and production process to improve the overall performance and quality of the products. On the other hand, it can evaluate the stable operation ability of the products under long-term high-temperature conditions and predict their service life in actual use.

[0003] Currently, the commonly used power semiconductor device test circuits and test methods cannot fully meet the requirements of high-temperature blocking failure screening and reliability testing for some types of power semiconductor devices, such as IGCT. Summary of the Invention

[0004] The main purpose of the present application is to provide a high-temperature blocking test circuit, a high-temperature blocking test device, and a method for testing a power semiconductor device, so as to at least solve the problem that the existing test circuits and test methods cannot fully meet the requirements of high-temperature blocking failure screening and reliability testing for devices.

[0005] To achieve the above object, according to one aspect of the present application, a high-temperature blocking test circuit is provided, including an AC voltage source branch, a DC voltage source branch, a gate voltage source branch, and a grounding switch that are electrically connected. Wherein, the first end of the grounding switch is electrically connected to the gate of the power semiconductor device to be tested, the second end of the grounding switch is grounded, and the AC voltage source branch, the DC voltage source branch, and the gate voltage source branch all include control switches; when the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device to be tested; when the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device to be tested; when the grounding switch is open and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device to be tested.

[0006] Optionally, the AC voltage source branch includes: an AC voltage source; a first current limiting module, the first end of the first current limiting module being electrically connected to the first end of the AC voltage source; a rectifying circuit, the first end of the rectifying circuit being electrically connected to the second end of the first current limiting module, the second end of the rectifying circuit being electrically connected to the anode of the power semiconductor device under test, and the rectifying circuit including a control switch of the AC voltage source branch.

[0007] Optionally, the control switch of the AC voltage source branch is a first switching device and a second switching device, the second end of the AC voltage source being electrically connected to the cathode of the power semiconductor device under test, and the rectifying circuit including: a first diode, the positive electrode of the first diode being electrically connected to the second end of the first current limiting module; the first switching device, the first end of the first switching device being electrically connected to the negative electrode of the first diode, and the second end of the first switching device being electrically connected to the anode of the power semiconductor device under test; a second diode, the negative electrode of the second diode being electrically connected to the second end of the first current limiting module; the second switching device, the first end of the second switching device being electrically connected to the positive electrode of the second diode, and the second end of the second switching device being electrically connected to the anode of the power semiconductor device under test.

[0008] Optionally, the control switch of the AC voltage source branch is a third switching device, and the rectifying circuit includes: a diode rectifier bridge structure formed by a third diode, a fourth diode, a fifth diode, and a sixth diode, the cathodes of the third diode and the fourth diode being electrically connected to the second end of the first current limiting module, the anodes of the fifth diode and the sixth diode being electrically connected to the second end of the AC voltage source, the anodes of the third diode and the fifth diode being electrically connected to the cathode of the power semiconductor device under test; the third switching device, the first end of the third switching device being respectively electrically connected to the cathodes of the fourth diode and the sixth diode, and the second end of the third switching device being electrically connected to the anode of the power semiconductor device under test.

[0009] Optionally, the control switch of the DC voltage source branch is a fourth switching device, and the DC voltage source branch includes: a DC voltage source, the first end of the DC voltage source being respectively electrically connected to the AC voltage source branch and the cathode of the power semiconductor device under test; a second current limiting module, the first end of the second current limiting module being electrically connected to the second end of the DC voltage source; the fourth switching device, the first end of the fourth switching device being electrically connected to the second end of the second current limiting module, and the second end of the fourth switching device being respectively electrically connected to the AC voltage source branch and the anode of the power semiconductor device under test.

[0010] Optionally, the control switch of the gate voltage source branch is a fifth switching device. The gate voltage source branch includes: a gate voltage source, the first end of the gate voltage source is electrically connected to the cathode of the power semiconductor device under test; the fifth switching device, the first end of the fifth switching device is electrically connected to the second end of the gate voltage source, and the second end of the fifth switching device is electrically connected to the gate of the power semiconductor device under test.

[0011] Optionally, the high-temperature blocking test circuit further includes: a first monitoring branch, the first end of the first monitoring branch is electrically connected to the anode of the power semiconductor device under test, the second end of the first monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the first monitoring branch is used to monitor the terminal voltage and / or leakage current between the anode and the cathode of the power semiconductor device under test; a second monitoring branch, the first end of the second monitoring branch is electrically connected to the gate of the power semiconductor device under test, the second end of the second monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the second monitoring branch is used to monitor the terminal voltage and / or leakage current between the gate and the cathode of the power semiconductor device under test; a protection branch, the first end of the protection branch is electrically connected to the anode of the power semiconductor device under test, and the second end of the protection branch is electrically connected to the cathode of the power semiconductor device under test.

[0012] Optionally, the first monitoring branch includes: a first voltage monitoring device, the first end of the first voltage monitoring device is electrically connected to the anode of the power semiconductor device under test, the second end of the first voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; a first current monitoring device, the first end of the first current monitoring device is electrically connected to the second end of the first voltage monitoring device, and the second end of the first current monitoring device is electrically connected to the AC voltage source branch and the DC voltage source branch respectively.

[0013] Optionally, the second monitoring branch includes: a second voltage monitoring device, the first end of the second voltage monitoring device is electrically connected to the gate of the power semiconductor device under test, the second end of the second voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; a second current monitoring device, the first end of the second current monitoring device is electrically connected to the first end of the second voltage monitoring device, and the second end of the second current monitoring device is electrically connected to the second end of the second voltage monitoring device.

[0014] Optionally, the protection branch includes: a sixth switching device, the first end of the sixth switching device is electrically connected to the anode of the power semiconductor device under test, and the second end of the sixth switching device is electrically connected to the cathode of the power semiconductor device under test.

[0015] According to another aspect of the present application, a high-temperature blocking test device is provided, including: any one of the high-temperature blocking test circuits, the high-temperature blocking test circuit being electrically connected to the power semiconductor device under test and used for performing a high-temperature blocking test on the power semiconductor device under test; a heating device, connected to the power semiconductor device under test and used for heating the power semiconductor device under test.

[0016] According to another aspect of the present application, a method for testing a power semiconductor device by using any one of the high-temperature blocking test circuits is provided, including: when the power semiconductor device under test is heated to a preset temperature, controlling the grounding switch and the control switch of the AC voltage source branch to close, so as to perform a high-temperature AC blocking test on the power semiconductor device under test by using the AC voltage source branch, or controlling the grounding switch and the control switch of the DC voltage source branch to close, so as to perform a high-temperature DC blocking test on the power semiconductor device under test by using the DC voltage source branch; or controlling the grounding switch to open and the control switch of the gate voltage source branch to close, so as to perform a high-temperature gate reverse bias test on the power semiconductor device under test by using the gate voltage source branch.

[0017] Optionally, the AC voltage source branch includes an AC voltage source, a first current limiting module, a first diode, a first switching device, a second diode, and a second switching device that are electrically connected. When the power semiconductor device under test is heated to a preset temperature, controlling the grounding switch and the control switch of the AC voltage source branch to close, so as to perform a high-temperature AC blocking test on the power semiconductor device under test by using the AC voltage source branch, includes: when the power semiconductor device under test is heated to a first preset temperature, closing the first switching device and the grounding switch, opening the second switching device, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature AC blocking screening and reliability test of the positive half-wave on the power semiconductor device under test by using the AC voltage source branch; when the power semiconductor device under test is heated to a second preset temperature, closing the second switching device and the grounding switch, opening the first switching device, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature AC blocking screening and reliability test of the negative half-wave on the power semiconductor device under test by using the AC voltage source branch; when the power semiconductor device under test is heated to a third preset temperature, closing the first switching device, the second switching device, and the grounding switch, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature full-wave AC blocking screening and reliability test on the power semiconductor device under test by using the AC voltage source branch.

[0018] Optionally, the preset temperature is related to the highest operating junction temperature of the power semiconductor device under test.

[0019] Applying the technical solution of the present application, the above-mentioned high-temperature blocking test circuit includes an AC voltage source branch, a DC voltage source branch, a gate voltage source branch, and a grounding switch that are electrically connected. When the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. This circuit realizes the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias of the power semiconductor device under test by controlling the access of different voltage sources, and solves the problem that the existing test circuits and test methods cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing. Description of the Drawings

[0020] The specification drawings forming a part of the present application are used to provide a further understanding of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0021] Figure 1 Shows a schematic structural diagram of a high-temperature blocking test circuit provided in an embodiment of the present application;

[0022] Figure 2 Shows a schematic structural diagram of another high-temperature blocking test circuit provided in an embodiment of the present application;

[0023] Figure 3 Shows a schematic structural diagram of another high-temperature blocking test circuit provided in an embodiment of the present application;

[0024] Figure 4 Shows a schematic structural diagram of another high-temperature blocking test circuit provided in an embodiment of the present application;

[0025] Figure 5 Shows a schematic structural diagram of another high-temperature blocking test circuit provided in an embodiment of the present application;

[0026] Figure 6 Shows a schematic structural diagram of a high-temperature blocking test device provided in an embodiment of the present application;

[0027] Figure 7The flowchart shows a method for testing a power semiconductor device using any one of the high-temperature blocking test circuits provided in the embodiments of the present application.

[0028] Among them, the above-mentioned drawings include the following reference numerals:

[0029] 01. High-temperature blocking test circuit; 02. Heating device; 10. AC voltage source branch; 11. First current-limiting module; 12. Rectifier circuit; 20. DC voltage source branch; 21. Second current-limiting module; 30. Gate voltage source branch; 40. Power semiconductor device under test; 50. First monitoring branch; 60. Second monitoring branch; 70. Protection branch; AC. AC voltage source; DC. DC voltage source; G. Gate voltage source; S0. Ground switch; S1. First switching device; S2. Second switching device; S3. Third switching device; S4. Fourth switching device; S5. Fifth switching device; S6. Sixth switching device; D1. First diode; D2. Second diode; D3. Third diode; D4. Fourth diode; D5. Fifth diode; D6. Sixth diode; V 1 , First voltage monitoring device; V 2 , Second voltage monitoring device; A 1 , First current monitoring device; A 2 , Second current monitoring device; R1. First current-limiting resistor; R2. Second current-limiting resistor. Detailed implementation manners

[0030] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0032] It should be noted that the terms "first", "second", etc. in the description, claims and above-mentioned drawings of this application are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances, so as to implement the embodiments of the present application described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0033] For the convenience of description, some nouns or terms involved in the embodiments of this application are described below:

[0034] Integrated Gate-Commutated Thyristor: abbreviated as IGCT;

[0035] Insulated Gate Bipolar Transistor: abbreviated as IGBT;

[0036] Metal Oxide Semiconductor Field Effect Transistor: abbreviated as MOSFET;

[0037] Gate Turn-off Thyristor: abbreviated as GTO;

[0038] Device Under Test: abbreviated as DUT;

[0039] Upper Specification Limit: abbreviated as USL.

[0040] As introduced in the background technology, the voltage operating conditions of thyristor devices in the prior art are generally 50Hz or 60Hz sine waves, and the operating conditions of IGBT and MOSFET devices are generally DC voltages. For IGCT devices, in the actual application process, the commutation and turn-off can be performed in the thyristor mode, and the device bears the AC voltage; at the same time, it can also perform active turn-off similar to the operating modes of IGBT and MOSFET, and the device directly bears the DC voltage. Therefore, when performing high-temperature blocking screening and reliability assessment on IGCT devices, high-temperature AC blocking and high-temperature DC blocking need to be carried out separately.

[0041] The currently commonly used power semiconductor device test circuits and test methods mainly meet the test requirements for high-temperature AC blocking of various thyristor devices and high-temperature DC blocking of IGBT and MOSFET devices. As a new type of power electronic device, the current test circuits and test methods for IGCT cannot fully meet the requirements for high-temperature blocking failure screening and reliability testing of the device.

[0042] In order to overcome the deficiencies of the prior art that the high-temperature blocking test circuits and test methods cannot meet the requirements for IGCT device screening and reliability testing, and to solve the problem that the existing test circuits and test methods cannot fully meet the requirements for high-temperature blocking failure screening and reliability testing of the device, embodiments of the present application provide a high-temperature blocking test circuit, a high-temperature blocking test device, and a method for testing power semiconductor devices.

[0043] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention.

[0044] In this embodiment, a high-temperature blocking test circuit is provided, as Figure 1 shown, including an AC voltage source branch 10, a DC voltage source branch 20, a gate voltage source branch 30, and a grounding switch S0 that are electrically connected. Among them, the first end of the grounding switch S0 is electrically connected to the gate of the power semiconductor device 40 to be tested, the second end of the grounding switch S0 is grounded, and the AC voltage source branch 10, the DC voltage source branch 20, and the gate voltage source branch 30 all include control switches; when the grounding switch S0 and the control switch of the AC voltage source branch 10 are both closed, the AC voltage source branch 10 is used to perform a high-temperature AC blocking test on the power semiconductor device 40 to be tested; when the grounding switch S0 and the control switch of the DC voltage source branch 20 are both closed, the DC voltage source branch 20 is used to perform a high-temperature DC blocking test on the power semiconductor device 40 to be tested; when the grounding switch S0 is disconnected and the control switch of the gate voltage source branch 30 is closed, the gate voltage source branch 30 is used to perform a high-temperature gate reverse bias test on the power semiconductor device 40 to be tested.

[0045] The above-mentioned high-temperature blocking test circuit of the present application includes an AC voltage source branch, a DC voltage source branch, a gate voltage source branch, and a grounding switch that are electrically connected. When the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high-temperature AC blocking test on the power semiconductor device under test; when the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high-temperature DC blocking test on the power semiconductor device under test; when the grounding switch is open and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high-temperature gate reverse bias test on the power semiconductor device under test. This circuit realizes the screening and reliability testing of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias of the power semiconductor device under test by controlling the access of different voltage sources, and solves the problem that the existing test circuit and test method cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing.

[0046] Among them, the above-mentioned high-temperature blocking test circuit can also be used for the screening and reliability testing of various thyristor devices such as IGCT and GTO, as well as transistor devices such as IGBT and MOSFET. The above-mentioned power semiconductor device under test is generally a three-port device. In this embodiment, taking IGCT as an example, the power semiconductor device under test includes an anode (A), a cathode (K), and a gate (G).

[0047] In some embodiments, as Figure 2 shown, the above-mentioned high-temperature blocking test circuit further includes: a first monitoring branch 50, the first end of the first monitoring branch 50 is electrically connected to the anode of the power semiconductor device under test 40, the second end of the first monitoring branch 50 is electrically connected to the cathode of the power semiconductor device under test 40, and the first monitoring branch 50 is used to monitor the terminal voltage and / or leakage current between the anode and the cathode of the power semiconductor device under test 40; a second monitoring branch 60, the first end of the second monitoring branch 60 is electrically connected to the gate of the power semiconductor device under test 40, the second end of the second monitoring branch 60 is electrically connected to the cathode of the power semiconductor device under test 40, and the second monitoring branch 60 is used to monitor the terminal voltage and / or leakage current between the gate and the cathode of the power semiconductor device under test 40; a protection branch 70, the first end of the protection branch 70 is electrically connected to the anode of the power semiconductor device under test 40, and the second end of the protection branch 70 is electrically connected to the cathode of the power semiconductor device under test 40.

[0048] Among them, the first monitoring branch includes at least one current source and one voltage source connected in series. The current source is used to monitor the leakage current flowing through the anode and cathode of the power semiconductor device under test, and the voltage source is used to monitor the terminal voltage of the anode and cathode of the power semiconductor device under test. The second monitoring branch includes at least one current source and one voltage source connected in parallel. The current source is used to monitor the leakage current flowing through the gate and cathode of the power semiconductor device under test, and the voltage source is used to monitor the terminal voltage of the gate and cathode of the power semiconductor device under test.

[0049] The protection branch includes at least one switching device for short-circuiting the anode and cathode of the power semiconductor device under test to perform short-circuit protection. Among them, the protection branch can be a single-pole single-throw switch or a switching device with a control terminal such as a transistor. In addition, the protection branch can be composed of multiple switching devices connected in parallel, so that in the case of damage to one switching device, the power semiconductor device under test can be short-circuited and protected by other undamaged devices.

[0050] In some embodiments, such as Figure 3 shown, the above AC voltage source branch includes: an AC voltage source AC; a first current-limiting module 11, the first end of the first current-limiting module 11 is electrically connected to the first end of the AC voltage source AC; a rectifying circuit 12, the first end of the rectifying circuit 12 is electrically connected to the second end of the first current-limiting module 11, the second end of the rectifying circuit 12 is electrically connected to the anode of the power semiconductor device 40 under test, and the rectifying circuit 12 includes a control switch of the AC voltage source branch.

[0051] Among them, the rectifying circuit can control the waveform output by the AC voltage source branch to realize the high-temperature AC blocking screening and reliability test of the positive half-wave of the power semiconductor device under test, the high-temperature AC blocking screening and reliability test of the negative half-wave, and the high-temperature AC blocking screening and reliability test under the full-wave rectified waveform. The first current-limiting module can be composed of a single resistor, or can be composed of multiple resistors connected in series or in parallel.

[0052] Taking the first current-limiting module being composed of a single resistor as an example, as Figure 4 shown, the first current-limiting module is resistor R1.

[0053] In some embodiments, such as Figure 4As shown, the control switches of the above AC voltage source branch are the first switching device S1 and the second switching device S2. The second terminal of the above AC voltage source AC is electrically connected to the cathode of the above power semiconductor device under test 40. The above rectifier circuit includes: a first diode D1, the positive electrode of the first diode D1 is electrically connected to the second terminal of the first current limiting module 11; the first switching device S1, the first terminal of the first switching device S1 is electrically connected to the negative electrode of the first diode D1, and the second terminal of the first switching device S1 is electrically connected to the anode of the above power semiconductor device under test 40; a second diode D2, the negative electrode of the second diode D2 is electrically connected to the second terminal of the first current limiting module 11; the second switching device S2, the first terminal of the second switching device S2 is electrically connected to the positive electrode of the second diode D2, and the second terminal of the second switching device S2 is electrically connected to the anode of the above power semiconductor device under test 40.

[0054] Among them, as Figure 4 shown, the above AC voltage source branch includes an AC voltage source AC, a first current limiting resistor R1, a first diode D1, a second diode D2, and a first switching device S1 and a second switching device S2. The above AC voltage source AC can provide a sine wave voltage of 50 Hz or 60 Hz. The maximum output voltage of the above AC voltage source AC should be higher than the rated voltage of the power semiconductor device under test. The output capacity can generally consider a 20% redundancy design; the above first current limiting resistor R1 is used to limit the maximum current when the AC voltage source branch is connected. The above first current limiting resistor R1 should not be too small to ensure that when the test circuit is short-circuited, the maximum current does not exceed the upper limit value of the above AC voltage source AC. At the same time, the above first current limiting resistor R1 should not be too large to ensure that when the test circuit is working normally, the voltage division of the above first current limiting resistor R1 is too large, generally not exceeding 5%; the above first diode D1 and the first switching device S1 provide a forward path when the AC voltage source branch is connected; the above second diode D2 and the second switching device S2 provide a reverse path when the AC voltage source branch is connected. The voltage withstand selection of the above first diode D1 and the first switching device S1, and the second diode D2 and the second switching device S2 should be higher than the maximum output voltage of the AC voltage source AC.

[0055] In some embodiments, as Figure 5As shown, the control switch of the above AC voltage source branch is the third switching device S3. The above rectifier circuit includes: a diode rectifier bridge structure, which is composed of a third diode D3, a fourth diode D4, a fifth diode D5, and a sixth diode D6. The cathodes of the third diode D3 and the fourth diode D4 are both electrically connected to the second end of the above first current limiting module 11. The cathodes of the fifth diode D5 and the sixth diode D6 are both electrically connected to the second end of the above AC voltage source AC. The anodes of the third diode D3 and the fifth diode D5 are both electrically connected to the cathode of the above device under test power semiconductor device 40. The above third switching device S3, the first end of the third switching device S3 is respectively electrically connected to the cathodes of the fourth diode D4 and the sixth diode D6, and the second end of the third switching device S3 is electrically connected to the anode of the above device under test power semiconductor device 40.

[0056] Among them, the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6 form a diode rectifier bridge, which can enable the above AC voltage source AC to provide a full-wave rectified voltage waveform and improve the test efficiency of high-temperature AC blocking. The above third switching device S3 provides a path when the AC voltage source branch is connected.

[0057] In some embodiments, as Figure 3 shown, the control switch of the above DC voltage source branch is the fourth switching device S4. The above DC voltage source branch includes: a DC voltage source DC, the first end of the DC voltage source DC is respectively electrically connected to the above AC voltage source branch and the cathode of the above device under test power semiconductor device 40; a second current limiting module 21, the first end of the second current limiting module 21 is electrically connected to the second end of the DC voltage source DC; the above fourth switching device S4, the first end of the fourth switching device S4 is electrically connected to the second end of the second current limiting module 21, and the second end of the fourth switching device S4 is respectively electrically connected to the above AC voltage source branch and the anode of the above device under test power semiconductor device 40.

[0058] Among them, the second current limiting module can be composed of a single resistor, or can be composed of multiple resistors connected in series or in parallel. Taking the first current limiting module being composed of a single resistor as an example, as Figure 4 and Figure 5 shown, the second current limiting module is the resistor R2.

[0059] The above-mentioned DC voltage source branch includes a DC voltage source DC, a second current-limiting resistor R2, and a third switching device S3. The above-mentioned DC voltage source DC provides a DC voltage. The maximum output voltage of the above-mentioned DC voltage source DC should be higher than 80% of the rated voltage of the power semiconductor device under test. Generally, a 20% redundancy design can be considered for the output capacity. The above-mentioned second current-limiting resistor R2 is used to limit the maximum current when the current voltage source branch is connected. The above-mentioned second current-limiting resistor R2 should not be too small to ensure that the maximum current does not exceed the upper limit value of the DC voltage source DC when the test circuit is short-circuited. At the same time, the above-mentioned second current-limiting resistor R2 should not be too large to ensure that when the test circuit works normally, the voltage division of the above-mentioned second current-limiting resistor R2 is too large, generally not exceeding 5%. The above-mentioned third switching device S3 provides a path when the DC voltage source branch is connected. The voltage withstand selection of the above-mentioned third switching device S3 should be higher than the maximum output voltage of the DC voltage source DC.

[0060] In some embodiments, such as Figure 4 and Figure 5 shown, the control switch of the above-mentioned gate voltage source branch is the fifth switching device S5. The above-mentioned gate voltage source branch includes: a gate voltage source G, and the first end of the above-mentioned gate voltage source G is electrically connected to the cathode of the above-mentioned power semiconductor device 40 under test; the above-mentioned fifth switching device S5, the first end of the above-mentioned fifth switching device S5 is electrically connected to the second end of the above-mentioned gate voltage source G, and the second end of the above-mentioned fifth switching device S5 is electrically connected to the gate of the above-mentioned power semiconductor device 40.

[0061] Among them, the above-mentioned gate voltage source branch includes a gate voltage source G and a fifth switching device S5. The above-mentioned gate voltage source G provides a gate reverse bias voltage. The maximum output voltage of the above-mentioned gate voltage source G should be higher than the rated gate reverse bias voltage of the power semiconductor device under test. Generally, a 20% redundancy design can be considered for the output capacity. The above-mentioned fifth switching device S5 provides a path when the gate voltage source G is connected. The above-mentioned grounding switch S0 can short-circuit the gate and cathode of the power semiconductor device under test.

[0062] In some embodiments, such as Figure 4 and Figure 5 shown, the above-mentioned first monitoring branch includes: a first voltage monitoring device V 1 , the first end of the above-mentioned first voltage monitoring device V 1 is electrically connected to the anode of the above-mentioned power semiconductor device 40, and the second end of the above-mentioned first voltage monitoring device V 1 is electrically connected to the cathode of the above-mentioned power semiconductor device 40; a first current monitoring device A 1 , the first end of the above-mentioned first current monitoring device A 1 is electrically connected to the second end of the above-mentioned first voltage monitoring device V 1 , and the second end of the above-mentioned first current monitoring device A 1The second ends are respectively electrically connected to the above-mentioned AC voltage source branch 10 and the above-mentioned DC voltage source branch 20.

[0063] Among them, the above-mentioned first monitoring branch includes a first voltage monitoring device V 1 and a first current monitoring device A 1 . The above-mentioned first voltage monitoring device V 1 is used to monitor the terminal voltage between the anode and the cathode of the power semiconductor device under test; the above-mentioned first current monitoring device A 1 is used to monitor the leakage current flowing through the anode and cathode of the power semiconductor device under test; the above-mentioned first voltage monitoring device V 1 and the first current monitoring device A 1 should have a variable-frequency sampling function, that is, at the initial stage of the test, the sampling frequency is high, and in the middle and late stages of the test, the test sampling frequency is appropriately reduced as needed.

[0064] In some embodiments, as Figure 4 and Figure 5 shown, the above-mentioned second monitoring branch 60 includes: a second voltage monitoring device V 2 , the first end of the above-mentioned second voltage monitoring device V 2 is electrically connected to the gate of the above-mentioned power semiconductor device 40 under test, and the second end of the above-mentioned second voltage monitoring device V 2 is electrically connected to the cathode of the above-mentioned power semiconductor device 40 under test; a second current monitoring device A 2 , the first end of the above-mentioned second current monitoring device A 2 is electrically connected to the first end of the above-mentioned second voltage monitoring device V 2 , and the second end of the above-mentioned second current monitoring device A 2 is electrically connected to the second end of the above-mentioned second voltage monitoring device V 2 .

[0065] Among them, the above-mentioned second monitoring branch includes a second voltage monitoring device V 2 and a second current monitoring device A 2 . The above-mentioned second voltage monitoring device V 2 is used to monitor the terminal voltage between the gate and the cathode of the power semiconductor device under test; the above-mentioned second current monitoring device A 2 is used to monitor the leakage current flowing through the gate and cathode of the power semiconductor device under test; the above-mentioned second voltage monitoring device V 2 and the second current monitoring device A 2 should have a variable-frequency sampling function, that is, at the initial stage of the test, the sampling frequency is high, and in the middle and late stages of the test, the test sampling frequency is appropriately reduced as needed.

[0066] In some embodiments, as Figure 4 and Figure 5As shown, the above protection branch includes: a sixth switching device S6, the first end of the sixth switching device S6 is electrically connected to the anode of the power semiconductor device 40 to be measured, and the second end of the sixth switching device S6 is electrically connected to the cathode of the power semiconductor device 40 to be measured.

[0067] Wherein, the anode and cathode of the power semiconductor device to be measured are short-circuited through the sixth switching device to realize the protection of the power semiconductor device to be measured.

[0068] The above high-temperature blocking test circuit has functions of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias test, can simultaneously meet the high-temperature blocking screening and reliability tests of various thyristor devices such as IGCT and GTO, as well as transistor devices such as IGBT and MOSFET, can improve the device screening and reliability test efficiency, and is easy to implement in practical applications. Some branches can be removed according to the test requirements of different devices, and it has flexible adjustability.

[0069] In this embodiment, a high-temperature blocking test device is further provided, as Figure 6 shown, including: any one of the above high-temperature blocking test circuits 01, the high-temperature blocking test circuit 01 is electrically connected to the power semiconductor device 40 to be measured, and is used to perform a high-temperature blocking test on the power semiconductor device 40 to be measured; a heating device 02, connected to the power semiconductor device 40 to be measured, and is used to heat the power semiconductor device 40 to be measured.

[0070] The above high-temperature blocking test device of the present application has functions of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias test, can simultaneously meet the high-temperature blocking screening and reliability tests of various thyristor devices such as IGCT and GTO, as well as transistor devices such as IGBT and MOSFET, can improve the device screening and reliability test efficiency, and is easy to implement in practical applications. Some branches can be removed according to the test requirements of different devices, and it has flexible adjustability.

[0071] In this embodiment, a method for testing a power semiconductor device using any one of the above high-temperature blocking test circuits is further provided, as Figure 7 shown, including:

[0072] Step S101, when the power semiconductor device under test is heated to a preset temperature, control the grounding switch and the control switch of the AC voltage source branch to close, so as to perform a high-temperature AC blocking test on the power semiconductor device under test by using the above AC voltage source branch, or control the grounding switch and the control switch of the DC voltage source branch to close, so as to perform a high-temperature DC blocking test on the power semiconductor device under test by using the above DC voltage source branch; or control the grounding switch to open and the control switch of the gate voltage source branch to close, so as to perform a high-temperature gate reverse bias test on the power semiconductor device under test by using the above gate voltage source branch.

[0073] The above test method of the present application realizes the screening and reliability test of high-temperature AC blocking, high-temperature DC blocking and high-temperature gate reverse bias of the power semiconductor device under test by controlling the closing and opening of different switching devices and the access of different voltage sources, and solves the problem that the test circuit and test method in the prior art cannot fully meet the requirements of device high-temperature blocking failure screening and reliability test.

[0074] In some embodiments, the high-temperature blocking test device stably heats the power semiconductor device under test to a preset temperature, and the preset temperature is related to the maximum operating junction temperature T of the power semiconductor device under test jmax and is generally T jmax −5 °C to T jmax .

[0075] In some embodiments, such as Figure 4As shown, the above AC voltage source branch includes an AC voltage source AC, a first current limiting module 11, a first diode D1, a first switching device S1, a second diode D2, and a second switching device S2. When the power semiconductor device under test is heated to a preset temperature, the grounding switch S0 and the control switch of the AC voltage source branch are controlled to close, so as to perform a high-temperature AC blocking test on the power semiconductor device under test using the above AC voltage source branch, including: when the power semiconductor device under test is heated to a first preset temperature, closing the first switching device S1 and the grounding switch S0, opening the second switching device S2, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature AC blocking screening and reliability test on the positive half-wave of the power semiconductor device under test using the above AC voltage source branch; when the power semiconductor device under test is heated to a second preset temperature, closing the second switching device S2 and the grounding switch S0, opening the first switching device S1, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature AC blocking screening and reliability test on the negative half-wave of the power semiconductor device under test using the AC voltage source branch; when the power semiconductor device under test is heated to a third preset temperature, closing the first switching device S1, the second switching device S2, and the grounding switch S0, and disconnecting the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test, so as to perform a high-temperature full-wave AC blocking screening and reliability test on the power semiconductor device under test using the above AC voltage source branch.

[0076] The test method for high-temperature blocking of a power semiconductor device provided in this embodiment also adopts the following technical solutions:

[0077] As Figure 4 shown, by heating the power semiconductor device under test to a specified temperature, closing S1 and S0, and opening S2, S4, S5, and S6, a high-temperature AC blocking screening and reliability test for the positive half-wave can be achieved; closing S2 and S0, and opening S1, S4, S5, and S6, a high-temperature AC blocking screening and reliability test for the negative half-wave can be achieved.

[0078] Preferably, as Figure 5 shown, by closing S0 and S3, and opening S4, S5, and S6, a high-temperature AC blocking screening and reliability test under a full-wave rectified waveform can be achieved.

[0079] As Figure 4 shown, by heating the power semiconductor device under test to a specified temperature, closing S1, S2, and S0, and opening S4, S5, and S6, a high-temperature full-wave AC blocking screening and reliability test can be achieved;

[0080] Heat the power semiconductor device under test to a specified temperature by a heating device, close S4 and S0, and open S1, S2, S5, and S6 to achieve high-temperature DC blocking screening and reliability testing;

[0081] Heat the power semiconductor device under test to a specified temperature by a heating device, close S5, and open S1, S2, S4, S0, and S6 to achieve high-temperature gate reverse bias screening and reliability testing;

[0082] Close S0 and S6, and open S1, S2, S4, and S5 for short-circuit protection of the power semiconductor device under test after the test is completed.

[0083] The present invention will be further described below in conjunction with the drawings and embodiments.

[0084] As Figure 2 shown, a high-temperature blocking test circuit for a power semiconductor device includes a power semiconductor device 40 under test, an AC voltage source branch 10, a DC voltage source branch 20, a gate voltage source branch 30, a first monitoring branch 50, a second monitoring branch 60, and a protection branch 70.

[0085] The first embodiment in this application is as Figure 4 shown. Heat the power semiconductor device under test to a specified temperature by the above heating device. When the maximum operating junction temperature T jmax of the power semiconductor device under test is 125 °C, the specified temperature should be 120 °C to 125 °C. Close S0, short-circuit the gate cathode of the power semiconductor device under test, open S2, S4, S5, and S6, and close S1. The AC voltage source AC provides a sine wave voltage of 50 Hz or 60 Hz. When the rated repetitive peak voltage of the power semiconductor device under test is 4.5 kV, the voltage output capacity selection of the above AC voltage source AC is recommended to be above 5.4 kV. After passing through the first diode D1 and the first switching device S1 (the voltage withstand selection of the above first diode D1 and first switching device S1 should be above 5.4 kV), a positive sine half-wave voltage is output and applied to the anode and cathode of the power semiconductor device under test. The terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode and cathode of the power semiconductor device under test are monitored by the voltage monitoring device V 1 and the current monitoring device A 1 The test circuit can be used for high-temperature AC blocking screening and reliability testing of the forward half-wave of power semiconductor devices.

[0086] Heat the power semiconductor device under test to a specified temperature using a heating device, close S0, short-circuit the gate-cathode of the power semiconductor device under test, open S1, S4, S5, S6, close S2, and the AC voltage source AC provides a sine wave voltage of 50 Hz or 60 Hz. After passing through the second diode D2 and the second switching device S2, a negative sine half-wave voltage is output and applied to the anode and cathode of the power semiconductor device under test. Monitor through the voltage monitoring device V 1 and the current monitoring device A 1 to monitor the terminal voltage between the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode-cathode of the power semiconductor device under test. The test circuit can be used for high-temperature AC blocking screening and reliability testing of the negative half-wave of power semiconductor devices.

[0087] Heat the power semiconductor device under test to a specified temperature using a heating device, close S0, short-circuit the gate-cathode of the power semiconductor device under test, open S4, S5, S6, close S1 and S2, and the AC voltage source AC provides a sine wave voltage of 50 Hz or 60 Hz. After passing through the first diode D1, the first switching device S1, the second diode D2, and the second switching device S2, a sine voltage is output and applied to the anode and cathode of the power semiconductor device under test. Monitor through the voltage monitoring device V 1 and the current monitoring device A 1 to monitor the terminal voltage between the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode-cathode of the power semiconductor device under test. The test circuit can be used for high-temperature full-wave AC blocking screening and reliability testing of power semiconductor devices.

[0088] Heat the power semiconductor device under test to a specified temperature using a heating device, close S0, short-circuit the gate-cathode of the power semiconductor device under test, open S1, S2, S5, S6, close S4, and the DC voltage source DC provides a DC voltage and applies the voltage to the anode and cathode of the power semiconductor device under test. Monitor through the voltage monitoring device V 1 and the current monitoring device A 1 to monitor the terminal voltage between the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode-cathode of the power semiconductor device under test. The test circuit can be used for high-temperature DC blocking screening and reliability testing of power semiconductor devices.

[0089] Heat the power semiconductor device under test to a specified temperature using a heating device, open S1, S2, S4, S0, S6, close S5, and the voltage source G provides a DC reverse bias voltage and applies the voltage to the gate and cathode of the power semiconductor device under test. Monitor through the voltage monitoring device V 2 and the current monitoring device A 2Monitor the terminal voltage of the gate and cathode of the power semiconductor device under test and the leakage current flowing through the gate-cathode of the power semiconductor device under test. The test circuit can be used for high-temperature gate reverse bias screening and reliability testing of power semiconductor devices.

[0090] After the device test is completed, disconnect S1, S2, S4, S5, close S0, S6, and short-circuit and protect the gate-cathode and anode-cathode of the power semiconductor device under test respectively.

[0091] Another embodiment in this application is as Figure 5 shown. The above AC voltage source branch may include an AC voltage source AC, a first current-limiting resistor R1, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, and a third switching device S3. Heat the power semiconductor device under test to a specified temperature through a heating device, close S0 to short-circuit the gate-cathode of the power semiconductor device under test, disconnect S4, S5, S6, close S3, the AC voltage source AC provides a sine wave voltage of 50 Hz or 60 Hz, passes through the diode rectifier bridge composed of the third diode D3, the fourth diode D4, the fifth diode D5, and the sixth diode D6, and the third switching device S3, outputs a full-wave rectified voltage, and applies the voltage to the anode and cathode of the power semiconductor device under test. Through the voltage monitoring device V 1 and the current monitoring device A 1 Monitor the terminal voltage of the anode and cathode of the power semiconductor device under test and the leakage current flowing through the anode-cathode of the power semiconductor device under test. The test circuit can be used for high-temperature AC blocking screening and reliability testing of power semiconductor devices under full-wave rectified waveforms, and can improve the test efficiency by 1 time.

[0092] Before carrying out high-temperature blocking screening and reliability testing on the above-mentioned power semiconductor device under test, the basic electrical parameters of the device should be detected to ensure good device characteristics. Taking IGCT or thyristor as an example, the test items should at least include the device on-state voltage drop V TM , off-state repetitive peak current I DRM and reverse repetitive peak current I RRM .

[0093] After completing the high-temperature blocking screening and reliability testing of the above-mentioned power semiconductor device under test, the basic electrical parameters of the device should be retested to determine whether the device passes the screening or reliability test. Taking IGCT or thyristor as an example, the judgment criteria are V TM , ≤1.1USL, I DRM ≤2USL and I RRM≤2USL, where USL is the specified upper limit value of the corresponding parameter, and USL is determined by the characteristics of the power semiconductor device under test. If the power semiconductor device under test meets the above judgment criteria, it is determined that the device passes the screening or reliability test. If the power semiconductor device under test does not meet the above judgment criteria, it is determined that the device fails.

[0094] Preferably, the above heating device can be added with a humidity control function to adjust the humidity of the environment where the power semiconductor device under test is located. When the environment where the power semiconductor device under test is located has both high temperature and high humidity, the above circuit can be used for the high temperature and high humidity reverse bias screening and reliability test of the power semiconductor device under test.

[0095] It should also be noted that the term "including", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of another identical element in the process, method, commodity or device including the element.

[0096] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0097] 1), The above high temperature blocking test circuit of the present application includes an AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch connected electrically. When the control switches of the grounding switch and the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high temperature AC blocking test on the power semiconductor device under test; when the control switches of the grounding switch and the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high temperature DC blocking test on the power semiconductor device under test; when the grounding switch is open and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high temperature gate reverse bias test on the power semiconductor device under test. This circuit realizes the screening and reliability test of high temperature AC blocking, high temperature DC blocking and high temperature gate reverse bias of the power semiconductor device under test by controlling the access of different voltage sources, and solves the problem that the existing test circuit and test method cannot fully meet the requirements of high temperature blocking failure screening and reliability test of the device.

[0098] 2), The above-mentioned high-temperature blocking test device of the present application has functions of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias test, and can simultaneously meet the high-temperature blocking screening and reliability tests of various thyristor devices such as IGCT and GTO, as well as transistor devices such as IGBT and MOSFET. It can improve the efficiency of device screening and reliability testing, and is easy to implement in practical applications. It can remove some branches according to the test requirements of different devices, and has flexible adjustability.

[0099] 3), The above-mentioned test method of the present application realizes the screening and reliability tests of high-temperature AC blocking, high-temperature DC blocking, and high-temperature gate reverse bias of the power semiconductor device under test by controlling the closing and opening of different switching devices and connecting different voltage sources, and solves the problem that the existing test circuit and test method cannot fully meet the requirements of device high-temperature blocking failure screening and reliability testing.

[0100] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A high temperature blocking test circuit, characterized in that: comprising an AC voltage source branch, a DC voltage source branch, a gate voltage source branch and a grounding switch which are electrically connected, Wherein, a first end of the grounding switch is electrically connected to the gate of the power semiconductor device under test, a second end of the grounding switch is grounded, and the AC voltage source branch, the DC voltage source branch and the gate voltage source branch all include a control switch; When the grounding switch and the control switch of the AC voltage source branch are both closed, the AC voltage source branch is used to perform a high temperature AC blocking test on the power semiconductor device under test; When the grounding switch and the control switch of the DC voltage source branch are both closed, the DC voltage source branch is used to perform a high temperature DC blocking test on the power semiconductor device under test; When the grounding switch is disconnected and the control switch of the gate voltage source branch is closed, the gate voltage source branch is used to perform a high temperature gate reverse bias test on the power semiconductor device under test; The high temperature blocking test circuit also includes: a first monitoring branch, wherein a first end of the first monitoring branch is electrically connected to an anode of the power semiconductor device under test, a second end of the first monitoring branch is electrically connected to a cathode of the power semiconductor device under test, and the first monitoring branch is used to monitor a terminal voltage and / or a leakage current between an anode and a cathode of the power semiconductor device under test; a second monitoring branch, wherein a first end of the second monitoring branch is electrically connected to the gate of the power semiconductor device under test, a second end of the second monitoring branch is electrically connected to the cathode of the power semiconductor device under test, and the second monitoring branch is used to monitor the terminal voltage and / or leakage current between the gate and cathode of the power semiconductor device under test; A protection branch, wherein a first end of the protection branch is electrically connected to an anode of the power semiconductor device under test, and a second end of the protection branch is electrically connected to a cathode of the power semiconductor device under test.

2. The high temperature blocking test circuit according to claim 1, characterized in that: The AC voltage source branch comprises: AC voltage source; A first current limiting module, wherein a first end of the first current limiting module is electrically connected to a first end of the AC voltage source; A rectifier circuit, wherein the first end of the rectifier circuit is electrically connected to the second end of the first current limiting module, the second end of the rectifier circuit is electrically connected to the anode of the power semiconductor device under test, and the rectifier circuit includes a control switch of the AC voltage source branch.

3. The high temperature blocking test circuit according to claim 2, characterized in that: The control switch of the AC voltage source branch is a first switch device and a second switch device, the second end of the AC voltage source is electrically connected to the cathode of the power semiconductor device under test, and the rectifier circuit includes: a first diode, wherein an anode of the first diode is electrically connected to a second end of the first current limiting module; The first switch device, wherein a first end of the first switch device is electrically connected to the cathode of the first diode, and a second end of the first switch device is electrically connected to the anode of the power semiconductor device under test; a second diode, wherein a cathode of the second diode is electrically connected to a second end of the first current limiting module; The second switch device, the first end of the second switch device is electrically connected to the anode of the second diode, and the second end of the second switch device is electrically connected to the anode of the power semiconductor device under test.

4. The high temperature blocking test circuit according to claim 2, characterized in that: The control switch of the AC voltage source branch is a third switch device, and the rectifier circuit includes: A diode rectifier bridge structure, wherein the diode rectifier bridge structure is composed of a third diode, a fourth diode, a fifth diode and a sixth diode, wherein the cathode of the third diode and the anode of the fourth diode are both electrically connected to the second end of the first current limiting module, the cathode of the fifth diode and the anode of the sixth diode are both electrically connected to the second end of the AC voltage source, and the anode of the third diode and the anode of the fifth diode are both electrically connected to the cathode of the power semiconductor device under test; The third switch device, the first end of the third switch device is electrically connected to the cathode of the fourth diode and the cathode of the sixth diode respectively, and the second end of the third switch device is electrically connected to the anode of the power semiconductor device under test.

5. The high temperature blocking test circuit according to claim 1, characterized in that: The control switch of the DC voltage source branch is a fourth switch device, and the DC voltage source branch includes: A DC voltage source, a first end of which is electrically connected to the AC voltage source branch and the cathode of the power semiconductor device under test respectively; A second current limiting module, wherein a first end of the second current limiting module is electrically connected to a second end of the DC voltage source; The fourth switch device, the first end of the fourth switch device is electrically connected to the second end of the second current limiting module, and the second end of the fourth switch device is electrically connected to the AC voltage source branch and the anode of the power semiconductor device under test respectively.

6. The high temperature blocking test circuit according to claim 1, characterized in that: The control switch of the gate voltage source branch is a fifth switch device, and the gate voltage source branch includes: A gate voltage source, a first end of which is electrically connected to a cathode of the power semiconductor device under test; The fifth switching device, the first end of the fifth switching device is electrically connected to the second end of the gate voltage source, and the second end of the fifth switching device is electrically connected to the gate of the power semiconductor device under test.

7. The high temperature blocking test circuit according to claim 1, characterized in that: The first monitoring branch comprises: a first voltage monitoring device, wherein a first end of the first voltage monitoring device is electrically connected to an anode of the power semiconductor device under test, and a second end of the first voltage monitoring device is electrically connected to a cathode of the power semiconductor device under test; A first current monitoring device, wherein a first end of the first current monitoring device is electrically connected to a second end of the first voltage monitoring device, and a second end of the first current monitoring device is electrically connected to the AC voltage source branch and the DC voltage source branch respectively.

8. The high temperature blocking test circuit according to claim 1, characterized in that: The second monitoring branch comprises: a second voltage monitoring device, wherein a first terminal of the second voltage monitoring device is electrically connected to the gate of the power semiconductor device under test, and a second terminal of the second voltage monitoring device is electrically connected to the cathode of the power semiconductor device under test; A second current monitoring device, wherein a first end of the second current monitoring device is electrically connected to a first end of the second voltage monitoring device, and a second end of the second current monitoring device is electrically connected to a second end of the second voltage monitoring device.

9. The high temperature blocking test circuit according to claim 1, characterized in that: The protection branch includes: A sixth switch device, wherein a first end of the sixth switch device is electrically connected to an anode of the power semiconductor device under test, and a second end of the sixth switch device is electrically connected to a cathode of the power semiconductor device under test.

10. A high temperature blocking test device, characterized in that: include: The high temperature blocking test circuit according to any one of claims 1 to 9, wherein the high temperature blocking test circuit is electrically connected to the power semiconductor device under test and is used to perform a high temperature blocking test on the power semiconductor device under test; A heating device is connected to the power semiconductor device under test and is used to heat the power semiconductor device under test.

11. A method for testing a power semiconductor device using the high temperature blocking test circuit according to any one of claims 1 to 9, characterized in that: include: When the power semiconductor device under test is heated to a preset temperature, the grounding switch and the control switch of the AC voltage source branch are controlled to be closed, so as to adopt the AC voltage source branch to perform a high-temperature AC blocking test on the power semiconductor device under test, or the grounding switch and the control switch of the DC voltage source branch are controlled to be closed, so as to adopt the DC voltage source branch to perform a high-temperature DC blocking test on the power semiconductor device under test; or the grounding switch is controlled to be disconnected and the control switch of the gate voltage source branch is closed, so as to adopt the gate voltage source branch to perform a high-temperature gate reverse bias test on the power semiconductor device under test.

12. The method according to claim 11, characterized in that The AC voltage source branch includes an electrically connected AC voltage source, a first current limiting module, a first diode, a first switch device, a second diode and a second switch device. When the power semiconductor device under test is heated to a preset temperature, the ground switch and the control switch of the AC voltage source branch are controlled to be closed, so as to use the AC voltage source branch to perform a high temperature AC blocking test on the power semiconductor device under test, including: When the power semiconductor device under test is heated to a first preset temperature, the first switch device and the grounding switch are closed, the second switch device is disconnected, and the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test is disconnected, so as to perform a forward half-wave high-temperature AC blocking screening and reliability test on the power semiconductor device under test using the AC voltage source branch; When the power semiconductor device under test is heated to a second preset temperature, the second switch device and the grounding switch are closed, the first switch device is disconnected, and the connection between the DC voltage source branch and the gate voltage source branch and the power semiconductor device under test is disconnected, so as to perform negative half-wave high-temperature AC blocking screening and reliability testing on the power semiconductor device under test using the AC voltage source branch; When the power semiconductor device under test is heated to a third preset temperature, the first switch device, the second switch device and the grounding switch are closed, and the DC voltage source branch and the gate voltage source branch are disconnected from the power semiconductor device under test, so that the AC voltage source branch is used to perform high-temperature full-wave AC blocking screening and reliability testing on the power semiconductor device under test.

13. The method according to claim 11, characterized in that The preset temperature is related to the maximum operating junction temperature of the power semiconductor device under test.

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