LED light source for full-spectrum plant illumination

Abstract

The invention discloses a full-spectrum plant illumination LED light source which comprises a multi-channel support, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, a second fluorescent glue layer and a multi-channel driver. Wherein the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged on the upper surface of the bracket in series or in parallel; the upper surface of the ultraviolet chip is sequentially coated with a red fluorescent glue layer and a near-infrared fluorescent glue layer; a first fluorescent glue layer is dispensed above the first blue light chip; a second fluorescent glue layer is dispensed above the second blue light chip; the support is filled with transparent silica gel, and the multi-channel driver is electrically connected with the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip and controls the current of the ultraviolet chip, the current of the first blue light chip, the current of the second blue light chip and the current of the red light chip.

Description

Technical Field

[0001] The present invention relates to the field of lighting technology, and more specifically to an LED light source for full-spectrum plant lighting. Background Art

[0002] Plants need grow lights with different spectra because different spectra can have different effects on the growth and development of plants. Spectra of different wavelengths can activate different physiological processes of plants, thereby meeting the needs of plants at different growth stages. Studies have shown that in addition to visible light, ultraviolet light and infrared light are beneficial to plant growth in practical applications, which can improve the taste of plants and the brightness of flower colors; especially the far-red light of 730-800nm, which is beneficial for plants to perceive the length of plants. Under far-red light conditions, plants will grow taller. Therefore, achieving full-spectrum plant lighting has certain advantages in both visual effects and plant growth.

[0003] At present, the full spectrum of plant lighting LEDs is basically achieved by patchwork of lamp beads. This method is too expensive. Secondly, in actual irradiation, the spectrum ratio of purple light, blue light, green light, red light and far-red light cannot be adjusted at will. In other words, the current spectrum of plant lights is too customized and is not suitable for different growth stages and different plant growth processes. It is difficult to achieve controllable adjustment of the spectrum. Summary of the invention

[0004] Since the prior art has the above-mentioned technical problems, the present invention provides a full-spectrum LED light source for plant lighting, aiming to solve the problem that the spectrum cannot be adjusted in the prior art.

[0005] In order to achieve the above technical purpose, the present invention adopts the following technical scheme:

[0006] A full-spectrum LED light source for plant lighting comprises a multi-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, a second fluorescent glue layer and a multi-channel driver, wherein: the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged in series or in parallel on the upper surface of the bracket; the upper surface of the ultraviolet chip is coated with a red light fluorescent glue layer and a near-infrared fluorescent glue layer in sequence; the first blue light chip is dotted with a first fluorescent glue layer; the second blue light chip is dotted with a second fluorescent glue layer; the bracket is filled with transparent silica gel; the multi-channel driver electrically connects and controls the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

[0007] Preferably, the peak wavelength of the UV chip is 385-405 nm.

[0008] Preferably, the red fluorescent glue layer is a mixture of red fluorescent powder and silica gel, and the ratio of the red fluorescent powder to the silica gel is 1:(0.5-1); and the near-infrared fluorescent glue layer is a mixture of near-infrared fluorescent powder and silica gel, and the ratio of the near-infrared fluorescent powder to the silica gel is 1:(0.25-0.5).

[0009] Preferably, the peak wavelength of the red phosphor is between 605-635 nm, and the peak wavelength of the near-infrared phosphor is between 710-740 nm.

[0010] Preferably, the red phosphor is at least one of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn; the near-infrared phosphor is at least one of Y3(Al, Ga)5O12:Ce3+,Cr3+ or Lu3Al5O12:Ce3+,Cr3+.

[0011] Preferably, the red phosphor is a mixture of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing weight ratio is 1:(1-2).

[0012] Preferably, the peak wavelength of the first blue light chip is between 435-440 nm, the first fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder is 1:(0.5-2).

[0013] Preferably, the peak wavelength of the second blue light chip is at 450-455nm, the second fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder in the second fluorescent glue layer is 1:(0.1-0.2).

[0014] Preferably, the green phosphor is at least one of Y3(Al, Ga)5O12:Ce, Lu3Al5O12:Ce, (Ba, Sr)2SiO4:Eu, and the red phosphor is at least one of (Sr, Ca)AlSiN3:Eu and Sr2Si5N8:Eu.

[0015] Preferably, the peak wavelength of the red light chip is between 655-665 nm.

[0016] Due to the adoption of the above technical solution, the present invention can realize full-spectrum controllable adjustment on a single light source through matching adjustment of the driver and the light source, and can meet the spectrum requirements of various plants at different growth stages. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of the present invention;

[0018] Figure 2 is a spectrum diagram of the first embodiment;

[0019] Figure 3 is a spectrum diagram of the second embodiment;

[0020] Figure 4 This is a spectrum diagram of the third embodiment. DETAILED DESCRIPTION

[0021] The technical solution of the present invention is further specifically described below through embodiments and in conjunction with the accompanying drawings.

[0022] See also Figure 1 As shown, the full-spectrum LED light source for plant lighting of the present invention includes a multi-channel bracket 1, an ultraviolet chip 2, a first blue light chip 3, a second blue light chip 4, a red light chip 5, a red light fluorescent glue layer 6, a near-infrared fluorescent glue layer 7, a first fluorescent glue layer 8, a second fluorescent glue layer 9 and a multi-channel driver. Among them, the ultraviolet chip 2, the first blue light chip 3, the second blue light chip 4 and the red light chip 5 are arranged in series or in parallel on the upper surface of the bracket 1. The bracket 1 serves as a support for the entire light source structure. The bracket is filled with transparent silicone.

[0023] The peak wavelength of the ultraviolet chip is 385-405nm. The upper surface of the ultraviolet chip 2 is first coated with a red light fluorescent glue layer 6, and then a near-infrared fluorescent glue layer 7 is coated on the red light fluorescent glue layer 6. The ultraviolet chip 2 excites the near-infrared fluorescent powder in the near-infrared fluorescent glue layer 7 to produce a purple light spectrum and a near-infrared spectrum. If the near-infrared fluorescent glue layer 7 is directly coated on the ultraviolet chip 2 as in the prior art, the near-infrared fluorescent powder will have too low efficiency in purple light excitation. Therefore, the present invention adds a transition layer, a red light fluorescent glue layer 6, between the ultraviolet chip 2 and the near-infrared fluorescent glue layer 7. The red light fluorescent powder in the red light fluorescent glue layer 6 is more efficient under the excitation of the ultraviolet chip 2, and presents an emission spectrum with a peak wavelength of about 620nm. The red light can effectively excite the near-infrared fluorescent powder, and then emit 710-740nm near-infrared light.

[0024] The red phosphor is at least one of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn. Preferably, the red phosphor is a mixture of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing weight ratio is 1:(1-2). If the ratio is too large, the red light intensity will be too low. If the ratio is too large, the spectrum will be too linear, which is not conducive to exciting the near-infrared phosphor. When the ratio is in the middle, the near-infrared phosphor excitation efficiency is higher. And too much fluoride phosphor will cause the device's resistance to high temperature and humidity to decrease.

[0025] The near-infrared phosphor is at least one of Y3(Al, Ga)5O12:Ce3+, Cr3+ or Lu3Al5O12:Ce3+, Cr3+. Among them, the near-infrared phosphor is preferably Lu3Al5O12:Ce3+, Cr3+, mainly because the phosphor of this system has good thermal stability. In addition, the molar ratio of Ce3+ and Cr3+ is optimized to 1:(8-10), because the role of Ce3+ in the luminescent system is energy transfer. If the concentration of Ce3+ is too low, the energy transfer is not obvious, and the infrared phosphor emission enhancement effect is not significant; if the concentration of Ce3+ is too high, it will cause excessive waste of green light emission and cannot be converted into near-infrared emission. When the ratio of Ce3+ to Cr3+ is in the above range, the emission intensity of the near-infrared phosphor can be effectively improved.

[0026] The red light fluorescent glue layer 6 is a mixture of red fluorescent powder and silica gel, and the optimal ratio of the red fluorescent powder to the silica gel is 1: (0.5-1). If the ratio is too high, most of the purple light spectrum will be absorbed, and if it is too low, the red light intensity will be too low, and it will be difficult to efficiently excite the infrared fluorescent powder later. The near-infrared fluorescent glue layer 7 is a mixture of near-infrared fluorescent powder and silica gel, and the ratio of the near-infrared fluorescent powder to the silica gel is 1: (0.25-0.5). If the ratio is too high, the powder will be too large, which will reduce the stability on the one hand and attenuate the purple light spectrum component on the other hand; if the ratio is too low, the near-infrared fluorescent powder will not completely absorb the red light, the near-infrared emission intensity will be low, and there will be uncontrollable red light spectrum components.

[0027] A first fluorescent glue layer 8 is dotted on the first blue light chip 3; a second fluorescent glue layer 9 is dotted on the second blue light chip 4. The first fluorescent glue layer 8 and the second fluorescent glue layer 9 are dotted on the chip surface to mainly provide two light sources with different color temperatures. The two different color temperature spectra can be controlled by current later, thereby realizing controllable spectrum adjustment of white light.

[0028] The peak wavelength of the first blue light chip 3 is at 435-440nm, and the first fluorescent glue layer 8 is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder is 1: (0.5-2). The weight ratio control is mainly to optimize the color temperature of the light source to be controllable within the range of 2000K-2700K. Too high a ratio will lead to a high color temperature, and too low a ratio will lead to reduced device stability and large light decay.

[0029] The peak wavelength of the second blue light chip is at 450-455nm, and the second fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder in the second fluorescent glue layer is 1:(0.1-0.2). The weight ratio control is mainly to optimize the color temperature of the light source to be controllable within the range of 5000K-8000K. Too high a ratio will result in too high a color temperature and low white light spectrum components, while too low a ratio will result in low color temperature, which is not conducive to the two light sources to achieve wide color temperature mixed light adjustment.

[0030] The peak wavelength of the red light chip is located at 655-665nm, and the light quantum efficiency is high at this illumination wavelength.

[0031] The full-spectrum LED light source for plant lighting of the present invention can realize full-spectrum plant lighting: the ultraviolet chip and the coated fluorescent powder glue layer provide a purple light spectrum and a near-infrared spectrum; the first blue light chip and the coated fluorescent glue layer provide a low color temperature white light spectrum; the second blue light chip and the coated fluorescent glue layer provide a high color temperature white light spectrum; the red light chip provides a red light spectrum of about 660nm; based on this, the spectrum required for plant lighting is all realized through one package, and the spectrum can be regulated by regulating the current of each channel.

[0032] A multi-channel driver is electrically connected to control the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

[0033] Specifically, some embodiments are as follows:

[0034] Embodiment 1: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1:1.5; The near-infrared glue layer is Lu3Al5O12: Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, and its spectrum is shown in Figure 2. The photonic quantum efficiency (PPE) of the device is 3.5μmol / J, and the near-infrared light power is 200mW.

[0035] Embodiment 2: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, the mixing ratio is 1 : 1.5; the near-infrared glue layer is Lu3Al5O12: Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:2, and its spectrum is shown in Figure 3, and the photonic quantum efficiency (PPE) of the device is 3.3μmol / J.

[0036] Embodiment 3: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1: 1.5; the near-infrared glue layer is Lu3Al5O12:Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:1, and its spectrum is shown in Figure 4, and the photonic quantum efficiency (PPE) of the device is 3.1μmol / J.

[0037] Embodiment 4: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+; the near-infrared glue layer is Lu3Al5O12: Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, and the photonic quantum efficiency (PPE) of the device is 3.4μmol / J, and the near-infrared light power is 80mW.

[0038] Embodiment 5: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is K2SiF6:Mn; the near-infrared glue layer is Lu3Al 5O12: Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, and the photonic quantum efficiency (PPE) of the device is 3.35μmol / J, and the near-infrared light power is 80mW.

[0039] Embodiment 6: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1:1. 5; the near-infrared glue layer is Lu3Al5O12:Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:8; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.48μmol / J, and the near-infrared light power is 190mW.

[0040] Embodiment 7: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1:1.5 ; The near-infrared glue layer is Lu3Al5O12: Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:10; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, and the photonic quantum efficiency (PPE) of the device is 3.49μmol / J, and the near-infrared light power is 195mW.

[0041] Comparative Example 1: A full-spectrum LED light source for plant lighting, comprising a 4-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, with a mixing ratio of The ratio of the near-infrared adhesive layer to the red phosphor is 1:1, and the ratio of the green phosphor to the red phosphor in the second fluorescent adhesive layer is 1:0.15; the current ratio of the purple chip, the first blue chip, the second blue chip and the red chip is 1:2:2:4, and the photonic quantum efficiency (PPE) of the device is 2.9 μmol / J, and the near-infrared light power is 100 mW.

[0042] Comparative Example 2: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1:1. 5; the near-infrared glue layer is Lu3Al5O12:Ce3+,Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:7; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.2μmol / J, and the near-infrared light power is 110mW.

[0043] Comparative Example 3: Full-spectrum LED light source for plant lighting, including a 4-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing ratio is 1:1. 5; the near-infrared adhesive layer is Lu3Al5O12:Ce3+, Cr3+, wherein the molar ratio of Ce3+ and Cr3+ is optimized to 1:11; the weight ratio of the green phosphor and the red phosphor in the first fluorescent adhesive layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent adhesive layer is 1:0.15; wherein the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.2μmol / J, and the near-infrared light power is 115mW.

[0044] It can be seen from the above embodiments that the fluorescent glue layer using a mixture of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn can improve the device's quantum efficiency and infrared radiation power; using Cr3+ and Ce3+ co-doping can improve the infrared radiation power, but the optimal molar ratio is 1:(8-10). If the ratio is too low, the energy transfer is not obvious and the improvement effect is not obvious. If the ratio is too high, it will cause excessive waste of green light emission and cannot be converted into near-infrared emission.

[0045] The above-described embodiments are only used to illustrate the present invention and are not used to limit the scope of the present invention. Equivalent changes and modifications made to the present invention by those skilled in the art should all fall within the scope of the claims attached to the present invention.

Claims

1. A full-spectrum LED light source for plant lighting, characterized in that: It includes a multi-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, a second fluorescent glue layer and a multi-channel driver, wherein: The ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged in series or in parallel on the upper surface of the bracket; The upper surface of the ultraviolet chip is coated with the red light fluorescent glue layer and the near-infrared fluorescent glue layer in sequence; A first fluorescent glue layer is dotted on the first blue light chip; A second fluorescent glue layer is dotted on the second blue light chip; The bracket is filled with transparent silica gel; The multi-channel driver is electrically connected to and controls the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

2. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The red light fluorescent glue layer is a mixture of red fluorescent powder and silica gel, and the ratio of the red fluorescent powder to the silica gel is 1:(0.5-1); and the near-infrared fluorescent glue layer is a mixture of near-infrared fluorescent powder and silica gel, and the ratio of the near-infrared fluorescent powder to the silica gel is 1:(0.25-0.5).

3. The full-spectrum LED light source for plant lighting according to claim 2, characterized in that: The red phosphor is at least one of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn; the near-infrared phosphor is at least one of Y3(Al, Ga)5O12:Ce3+,Cr3+ or Lu3Al5O12:Ce3+,Cr3+.

4. The full-spectrum LED light source for plant lighting according to claim 3, characterized in that: The red phosphor is a mixture of (Sr, Ca)AlSiN3:Eu2+ and K2SiF6:Mn, and the mixing weight ratio is 1:(1-2).

5. The full-spectrum LED light source for plant lighting according to claim 3, characterized in that: The molar ratio of Ce3+ to Cr3+ in the near-infrared phosphor is optimized to 1:(8-10).

6. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the first blue light chip is between 435 nm and 440 nm, the first fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder is 1:(0.5-2).

7. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the second blue light chip is at 450-455 nm, the second fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder in the second fluorescent glue layer is 1:(0.1-0.2).

8. The full-spectrum LED light source for plant lighting according to claim 7 or 8, characterized in that: The green phosphor is at least one of Y3(Al, Ga)5O12:Ce, Lu3Al5O12:Ce, (Ba, Sr)2SiO4:Eu, and the red phosphor is at least one of (Sr, Ca)AlSiN3:Eu and Sr2Si5N8:Eu.

9. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the red light chip is between 655 and 665 nm.

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