A full-spectrum LED light source for plant lighting

Abstract

The present invention discloses an LED light source for full-spectrum plant lighting, comprising a multi-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, a second fluorescent glue layer and a multi-channel driver, wherein: the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged in series or in parallel on the upper surface of the bracket; the upper surface of the ultraviolet chip is coated with a red light fluorescent glue layer and a near-infrared fluorescent glue layer in sequence; the first fluorescent glue layer is dotted above the first blue light chip; the second fluorescent glue layer is dotted above the second blue light chip; the bracket is filled with transparent silica gel, and the multi-channel driver electrically connects and controls the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

Description

Technical Field

[0001] The present invention relates to the field of lighting technology, and more specifically to a full-spectrum LED light source for plant lighting. Background Art

[0002] Plants require grow lights with different spectra because different light spectrums have different effects on their growth and development. Spectra of varying wavelengths can activate different physiological processes in plants, thereby meeting their needs at different growth stages. Research has shown that, in addition to visible light, ultraviolet and infrared light also contribute to plant growth by enhancing flavor and color. Far-red light, particularly at 730-800nm, helps plants perceive their length and, under far-red light conditions, grows taller. Therefore, achieving full-spectrum plant lighting offers advantages in both visual effects and plant growth.

[0003] Currently, achieving full-spectrum horticultural lighting with LEDs relies primarily on a patchwork of LEDs. This approach is both costly and, in practice, difficult to adjust the spectral ratios of violet, blue, green, red, and far-red light. In other words, current horticultural lighting spectra are too highly customized to suit the different growth stages and processes of plants, making it difficult to achieve controllable spectrum adjustment. Summary of the Invention

[0004] Since the prior art has the above-mentioned technical problems, the present invention provides a full-spectrum LED light source for plant lighting, aiming to solve the problem of unadjustable spectrum in the prior art.

[0005] In order to achieve the above technical purpose, the present invention adopts the following technical solutions:

[0006] A full-spectrum LED light source for plant lighting comprises a multi-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, a second fluorescent glue layer and a multi-channel driver, wherein: the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged in series or in parallel on the upper surface of the bracket; the upper surface of the ultraviolet chip is coated with a red light fluorescent glue layer and a near-infrared fluorescent glue layer in sequence; the first blue light chip is dotted with a first fluorescent glue layer to emit a white light spectrum with a low color temperature; the second blue light chip is dotted with a second fluorescent glue layer to emit a white light spectrum with a high color temperature; the bracket is filled with transparent silicone; the multi-channel driver electrically connects and controls the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

[0007] Preferably, the peak wavelength of the UV chip is 385-405 nm.

[0008] Preferably, the red fluorescent adhesive layer is a mixture of red fluorescent powder and silica gel; and the near-infrared fluorescent adhesive layer is a mixture of near-infrared fluorescent powder and silica gel.

[0009] Preferably, the peak wavelength of the red phosphor is between 605 and 635 nm, and the peak wavelength of the near-infrared phosphor is between 710 and 740 nm.

[0010] Preferably, the red phosphor is (Sr, Ca)AlSiN3:Eu 2+ and at least one of K2SiF6:Mn; the near-infrared phosphor is Y3(Al, Ga)5O 12 :Ce 3+ , Cr 3+ or Lu3Al5O 12 :Ce 3+ , Cr 3+ At least one of.

[0011] Preferably, the red phosphor is (Sr, Ca)AlSiN3:Eu 2+ and a mixture of K2SiF6:Mn, wherein the mixing weight ratio is 1:(1-2).

[0012] Preferably, the peak wavelength of the first blue light chip is 435-440 nm, the first fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder is 1:(0.5-2).

[0013] Preferably, the peak wavelength of the second blue light chip is at 450-455nm, the second fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder in the second fluorescent glue layer is 1:(0.1-0.2).

[0014] Preferably, the green phosphor is Y3(Al, Ga)5O 12 :Ce,Lu3Al5O 12 :Ce, (Ba, Sr)2SiO4:Eu, and the red phosphor is at least one of (Sr,Ca)AlSiN3:Eu and Sr2Si5N8:Eu.

[0015] Preferably, the peak wavelength of the red light chip is between 655 and 665 nm.

[0016] Due to the adoption of the above technical solution, the present invention can achieve full spectrum controllable adjustment on a single light source through matching adjustment of the driver and the light source, and can meet the spectrum requirements of various plants at different growth stages. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of the present invention;

[0018] Figure 2 is a spectrum diagram of the first embodiment;

[0019] Figure 3 is a spectrum diagram of the second embodiment;

[0020] Figure 4 This is a spectrum diagram of the third embodiment. DETAILED DESCRIPTION

[0021] The technical solution of the present invention will be further specifically described below through embodiments and in conjunction with the accompanying drawings.

[0022] See also Figure 1 As shown, the present invention's full-spectrum LED light source for plant lighting includes a multi-channel bracket 1, a UV chip 2, a first blue chip 3, a second blue chip 4, a red chip 5, a red fluorescent adhesive layer 6, a near-infrared fluorescent adhesive layer 7, a first fluorescent adhesive layer 8, a second fluorescent adhesive layer 9, and a multi-channel driver. The UV chip 2, the first blue chip 3, the second blue chip 4, and the red chip 5 are arranged in series or in parallel on the upper surface of the bracket 1. The bracket 1 serves as a support for the entire light source structure. The bracket is filled with transparent silicone.

[0023] The peak wavelength of the ultraviolet chip is 385-405nm. The upper surface of the ultraviolet chip 2 is first coated with a red fluorescent glue layer 6, and then a near-infrared fluorescent glue layer 7 is coated on the red fluorescent glue layer 6. The ultraviolet chip 2 excites the near-infrared fluorescent powder in the near-infrared fluorescent glue layer 7 to produce a purple light spectrum and a near-infrared spectrum. If the near-infrared fluorescent glue layer 7 is directly coated on the ultraviolet chip 2 as in the prior art, the near-infrared fluorescent powder will have too low efficiency in purple light excitation. Therefore, the present invention adds a transition layer, a red fluorescent glue layer 6, between the ultraviolet chip 2 and the near-infrared fluorescent glue layer 7. The red fluorescent powder in the red fluorescent glue layer 6 is more efficient under the excitation of the ultraviolet chip 2, and exhibits an emission spectrum with a peak wavelength of about 620nm. The red light can effectively excite the near-infrared phosphor, and then emit 710-740nm near-infrared light.

[0024] The red phosphor is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn. Preferably, the red phosphor is (Sr, Ca)AlSiN3:Eu 2+The mixing ratio of K2SiF6 and Mn is 1:(1-2) by weight. Too high a ratio will result in low red light intensity, too high a ratio will result in an overly linear emission spectrum, which is not conducive to exciting near-infrared phosphors. An intermediate ratio results in higher near-infrared phosphor excitation efficiency. Excessive fluoride phosphor content can also reduce the device's resistance to high temperatures and humidity.

[0025] The near-infrared phosphor is Y3(Al, Ga)5O 12 :Ce 3+ , Cr 3+ or Lu3Al5O 12 :Ce 3+ , Cr 3+ At least one of the near-infrared phosphors. The preferred near-infrared phosphor is Lu3Al5O 12 :Ce 3+ , Cr 3+ The main reason is that the phosphor of this system has good thermal stability. 3+ and Cr 3+ The molar ratio is optimized to 1:(8-10) because Ce 3+ The role played by Ce in the luminescence system is energy transfer. 3+ If the concentration is too low, the energy transfer is not obvious and the infrared phosphor emission enhancement effect is not significant; if Ce 3+ If the concentration is too high, it will cause excessive green light emission to be wasted and cannot be converted into near-infrared emission. 3+ and Cr 3+ When the ratio is within the above range, the emission intensity of the near-infrared phosphor can be effectively improved.

[0026] The red fluorescent adhesive layer 6 is a mixture of red phosphor and silica gel, with the optimal ratio of red phosphor to silica gel being 1:(0.5-1). A too high ratio will result in the absorption of most of the violet spectrum, while a too low ratio will result in too low red light intensity, making it difficult to efficiently excite the infrared phosphor. The near-infrared fluorescent adhesive layer 7 is a mixture of near-infrared phosphor and silica gel, with the ratio of near-infrared phosphor to silica gel being 1:(0.25-0.5). A too high ratio will result in a larger powder ratio, which will reduce stability and attenuate the violet spectrum. A too low ratio will result in incomplete red light absorption by the near-infrared phosphor, resulting in low near-infrared emission intensity and the presence of uncontrollable red light spectrum components.

[0027] A first fluorescent adhesive layer 8 is applied to the first blue chip 3, and a second fluorescent adhesive layer 9 is applied to the second blue chip 4. Both the first and second fluorescent adhesive layers 8 and 9 are applied to the chip surfaces to provide two light sources with different color temperatures. These two color temperature spectra can then be controlled by current, thereby achieving controllable spectral modulation of white light.

[0028] The peak wavelength of the first blue light chip 3 is between 435-440nm. The first phosphor layer 8 is a mixture of green phosphor, red phosphor, and silica gel, with the weight ratio of the green phosphor to the red phosphor being 1:(0.5-2). This weight ratio is controlled primarily to optimize the light source's color temperature within the range of 2000K-2700K. Too high a ratio will result in a high color temperature, while too low a ratio will reduce device stability and increase light decay.

[0029] The peak wavelength of the second blue light chip is between 450-455nm. The second fluorescent adhesive layer is a mixture of green phosphor, red phosphor, and silica gel, with the weight ratio of green phosphor to red phosphor in the second fluorescent adhesive layer being 1:(0.1-0.2). This weight ratio is controlled primarily to optimize the color temperature of the light source to be controllable within the range of 5000K-8000K. Too high a ratio will result in an excessively high color temperature and low white light spectral content, while too low a ratio will result in a low color temperature, hindering wide color temperature mixing and adjustment of the two light sources.

[0030] The peak wavelength of the red light chip is between 655 and 665 nm, and the light quantum efficiency is high at this wavelength.

[0031] The full-spectrum LED light source for plant lighting of the present invention can achieve full-spectrum plant lighting: the ultraviolet chip and the coated phosphor glue layer provide a purple light spectrum and a near-infrared spectrum; the first blue light chip and the coated fluorescent glue layer provide a low color temperature white light spectrum; the second blue light chip and the coated fluorescent glue layer provide a high color temperature white light spectrum; the red light chip provides a red light spectrum of about 660nm; based on this, the spectrum required for plant lighting is all realized through a package, and the spectrum can be controlled by regulating the current of each channel.

[0032] A multi-channel driver is electrically connected to control the current of the ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip respectively.

[0033] Specifically, some embodiments are as follows:

[0034] Example 1: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce3+ , Cr 3+ , where Ce 3+ and Cr 3+ The molar ratio is optimized to 1:9; the weight ratio of the green phosphor to the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor to the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, and its spectrum is shown in Figure 2. The photonic quantum efficiency (PPE) of the device is 3.5μmol / J, and the near-infrared light power is 200mW.

[0035] Example 2: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+ The molar ratio is optimized to 1:9; the weight ratio of the green phosphor to the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor to the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:2, and its spectrum is shown in Figure 3. The photonic quantum efficiency (PPE) of the device is 3.3μmol / J.

[0036] Example 3: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr3+ The molar ratio is optimized to 1:9; the weight ratio of the green phosphor to the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor to the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:1, and its spectrum is shown in Figure 4. The photonic quantum efficiency (PPE) of the device is 3.1 μmol / J.

[0037] Example 4: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ ; The near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+ The molar ratio is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.4 μmol / J, and the near-infrared light power is 80 mW.

[0038] Example 5: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is K2SiF6:Mn; the near-infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+The molar ratio is optimized to 1:9; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.35 μmol / J, and the near-infrared light power is 80 mW.

[0039] Example 6: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+ The molar ratio is optimized to 1:8; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.48μmol / J, and the near-infrared light power is 190mW.

[0040] Example 7: A full-spectrum LED light source for plant lighting, comprising a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, and a second fluorescent adhesive layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent adhesive layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+The molar ratio is optimized to 1:10; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.49 μmol / J, and the near-infrared light power is 195 mW.

[0041] Comparative Example 1: Full-spectrum LED light source for plant lighting, including a 4-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Cr 3+ , where Cr 3+ The relative content is the same as in Example 1; the weight ratio of the green phosphor to the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor to the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 2.9 μmol / J, and the near-infrared light power is 100 mW.

[0042] Comparative Example 2: Full-spectrum LED light source for plant lighting, including a four-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+The molar ratio is optimized to 1:7; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.2μmol / J, and the near-infrared light power is 110mW.

[0043] Comparative Example 3: Full-spectrum LED light source for plant lighting, including a 4-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent glue layer, a near-infrared fluorescent glue layer, a first fluorescent glue layer, and a second fluorescent glue layer, wherein: the wavelength of the ultraviolet chip is 395nm, the wavelength of the first blue light chip is 438nm, the wavelength of the second blue light chip is 450nm, and the wavelength of the red light chip is 660nm; the red light fluorescent glue layer is (Sr, Ca)AlSiN3:Eu 2+ and K2SiF6:Mn, the mixing ratio is 1:1.5; the near infrared adhesive layer is Lu3Al5O 12 :Ce 3+ , Cr 3+ , where Ce 3+ and Cr 3+ The molar ratio is optimized to 1:11; the weight ratio of the green phosphor and the red phosphor in the first fluorescent glue layer is 1:1, and the weight ratio of the green phosphor and the red phosphor in the second fluorescent glue layer is 1:0.15; the current ratio of the purple light chip, the first blue light chip, the second blue light chip and the red light chip is 1:2:2:4, the photonic quantum efficiency (PPE) of the device is 3.2μmol / J, and the near-infrared light power is 115mW.

[0044] From the above examples, it can be seen that the fluorescent glue layer is made of (Sr, Ca)AlSiN3:Eu 2+ The mixture of Ce and K2SiF6:Mn can improve the device's quantum efficiency and infrared radiation power; 3+ and Cr 3+ When co-doped, the infrared radiation power can be improved, but the optimal molar ratio is 1: (8-10). If the ratio is too low, the energy transfer is not obvious and the improvement effect is not obvious. If the ratio is too high, it will cause excessive waste of green light emission and cannot be converted into near-infrared emission.

[0045] The above embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. Equivalent changes and modifications made by those skilled in the art to the present invention should all fall within the scope of the claims appended hereto.

Claims

1. A full-spectrum LED light source for plant lighting, characterized in that: It includes a multi-channel bracket, an ultraviolet chip, a first blue light chip, a second blue light chip, a red light chip, a red light fluorescent adhesive layer, a near-infrared fluorescent adhesive layer, a first fluorescent adhesive layer, a second fluorescent adhesive layer and a multi-channel driver, wherein: The ultraviolet chip, the first blue light chip, the second blue light chip and the red light chip are arranged in series or in parallel on the upper surface of the bracket; The upper surface of the ultraviolet chip is coated with the red fluorescent adhesive layer and the near-infrared fluorescent adhesive layer in sequence; A first fluorescent adhesive layer is dotted on the first blue light chip to emit a white light spectrum with a low color temperature; A second fluorescent glue layer is dotted on the second blue light chip to emit a high color temperature white light spectrum; The bracket is filled with transparent silica gel; The multi-channel driver is electrically connected to and controls the currents of the ultraviolet chip, the first blue light chip, the second blue light chip, and the red light chip respectively.

2. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The red fluorescent adhesive layer is a mixture of red fluorescent powder and silica gel; and the near-infrared fluorescent adhesive layer is a mixture of near-infrared fluorescent powder and silica gel.

3. The full-spectrum LED light source for plant lighting according to claim 2, characterized in that: The red phosphor is (Sr, Ca)AlSiN3:Eu 2+ and at least one of K2SiF6:Mn; the near-infrared phosphor is Y3(Al, Ga)5O 12 :Ce 3+ , Cr 3+ or Lu3Al5O 12 :Ce 3+ , Cr 3+ At least one of.

4. The full-spectrum LED light source for plant lighting according to claim 3, characterized in that: The red phosphor is (Sr, Ca)AlSiN3:Eu 2+ and a mixture of K2SiF6:Mn, wherein the mixing weight ratio is 1:(1-2).

5. The full-spectrum LED light source for plant lighting according to claim 3, characterized in that: The Ce in the near-infrared phosphor 3+ and Cr 3+ The molar ratio is 1:(8-10).

6. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the first blue light chip is between 435 and 440 nm. The first fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel, and the weight ratio of the green fluorescent powder to the red fluorescent powder is 1:(0.5-2).

7. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the second blue light chip is between 450 and 455 nm. The second fluorescent glue layer is a mixture of green fluorescent powder, red fluorescent powder and silica gel. The weight ratio of the green fluorescent powder to the red fluorescent powder in the second fluorescent glue layer is 1:(0.1-0.2).

8. The full-spectrum LED light source for plant lighting according to claim 6 or 7, characterized in that: The green phosphor is Y3(Al, Ga)5O 12 :Ce,Lu3Al5O 12 :Ce, (Ba, Sr)2SiO4:Eu, and the red phosphor is at least one of (Sr,Ca)AlSiN3:Eu and Sr2Si5N8:Eu.

9. The full-spectrum LED light source for plant lighting according to claim 1, characterized in that: The peak wavelength of the red light chip is between 655 and 665 nm.

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