Perovskite solar cell with interface layer and preparation method thereof

Abstract

The invention discloses a perovskite solar cell with an interface layer and a preparation method thereof. The perovskite solar cell comprises a substrate layer, a first transmission layer, a first interface layer, a perovskite layer, a second interface layer, a second transmission layer and a top electrode layer which are stacked in sequence, the chemical composition of the first and second interface layers includes a single layer of inorganic two-dimensional material, which is an inorganic two-dimensional interface layer. The inorganic two-dimensional interface layer of the perovskite solar cell reduces non-radiative recombination of carriers at a perovskite interface, and physically blocks migration of perovskite ions to the charge transport layer. Therefore, the perovskite solar cell has excellent photoelectric conversion efficiency and stability.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a perovskite solar cell with an interface layer and a preparation method thereof. Background Art

[0002] Perovskite solar cells have achieved photoelectric conversion efficiencies exceeding 26%, but halide perovskites are prone to degradation during cell operation due to their soft lattices and relatively weak chemical bonds. Specifically, light and heat easily activate ion defects within the perovskite lattice, which cause severe ion migration in the perovskite film. Ion migration can cause substantial changes in the perovskite film and also cause degradation of other functional layers. Therefore, reducing ion migration is critical to enhancing the long-term stability of perovskite solar cells.

[0003] The interfacial layer can passivate movable charged defects and reduce the ion migration path, and is a feasible strategy to inhibit ion migration. Halide salts, inorganic oxides, organic small molecules, and polymers are the most commonly used interfacial layer materials. However, these materials either have poor stability, cannot form continuous and dense films, or hinder carrier transport to a certain extent. Therefore, integrating a continuous interfacial layer at the perovskite interface that can fully block ion migration without hindering carrier transport remains a challenge and a key scientific issue that needs to be solved in this field at this stage. Summary of the invention

[0004] In order to solve the above problems, the present invention is intended to provide a perovskite solar cell with an interface layer and a preparation method thereof.

[0005] In one aspect, the present invention provides a perovskite solar cell with an interface layer, which includes a substrate layer, a first transmission layer, a first interface layer, a perovskite layer, a second interface layer, a second transmission layer and a top electrode layer stacked in sequence; the first interface layer and the second interface layer are both inorganic two-dimensional interface layers.

[0006] Preferably, the inorganic two-dimensional interface layer is an inorganic two-dimensional thin film, wherein it should be noted that the two-dimensional thin film means that the thin film has an atomic-level thickness.

[0007] Preferably, the preparation material of the above-mentioned inorganic two-dimensional film can be any one of graphene, graphene derivatives, hexagonal boron nitride, black phosphorus, transition metal disulfide, transition metal carbide, transition metal carbonitride, and graphite carbon nitride.

[0008] Preferably, the chemical composition of the interface layer includes a single layer of inorganic two-dimensional material, and the above-mentioned inorganic two-dimensional film is a single layer of inorganic two-dimensional film; it should be noted that the single layer of inorganic two-dimensional film means that the inorganic two-dimensional film has a single atomic layer or a single molecular layer, that is, the film has a single atomic layer thickness or a single molecular layer thickness.

[0009] Preferably, the substrate layer is a transparent conductive substrate glass or a bottom cell in a stacked cell.

[0010] More preferably, the transparent conductive substrate glass may be ITO glass.

[0011] Preferably, the chemical composition of the perovskite layer is FA 1-x-y Cs x MA y PbI 3-m Br m , where 0≤x≤1, 0≤y≤1, and x+y≤1; 0≤m≤3.

[0012] Preferably, the top electrode layer is one or more of a metal electrode, a carbon electrode, and a transparent conductive oxide.

[0013] The above-mentioned perovskite solar cell with an interface layer provided by the present invention has an inorganic two-dimensional interface layer that can form a stable heterojunction with the perovskite through bonding due to surface dangling bonds; the interface layer can minimize carrier transmission losses due to its atomic-level thickness; and the interface layer can block ion migration to the maximum extent due to its continuous and dense two-dimensional morphology.

[0014] In another aspect, the present invention further provides a method for preparing the above-mentioned perovskite solar cell, the preparation method comprising the following steps:

[0015] S1, cleaning the basal layer;

[0016] S2. preparing a first transmission layer on the surface of the base layer;

[0017] S3, transferring the inorganic two-dimensional interface layer to the surface of the first transmission layer to form a first interface layer;

[0018] S4, preparing a perovskite layer on the surface of the first interface layer;

[0019] S5, transferring the inorganic two-dimensional interface layer to the surface of the perovskite layer to form a second interface layer;

[0020] S6, preparing a second transmission layer on the surface of the second interface layer;

[0021] S7. Prepare a top electrode layer on the surface of the second transport layer, that is, prepare a perovskite solar cell with an interface layer.

[0022] Preferably, in the above step S1, the base layer can be placed in a detergent aqueous solution, ultrapure water, and isopropyl alcohol for ultrasonic cleaning, and then blown dry with N2, and then treated with UV-O3.

[0023] Preferably, in the above step S2, the first transmission layer can be prepared on the surface of the base layer based on a spin coating process, and an annealing heat treatment is performed.

[0024] Preferably, in the above step S4, the perovskite layer can be prepared based on a two-step method, and a spin coating process can be used during the preparation process, and an annealing heat treatment can be performed.

[0025] Preferably, in the above step S6, the second transmission layer can be prepared on the surface of the second interface layer based on a vacuum thermal evaporation process.

[0026] Preferably, in the above step S7, the top electrode layer may be prepared on the surface of the second transport layer based on a vacuum thermal evaporation process and / or a magnetron sputtering process.

[0027] Preferably, in the above steps S2, S4, S6 and S7, a deposition method can be used for corresponding preparation.

[0028] Preferably, in the above steps S3 and S5, the transfer of the inorganic two-dimensional interface layer includes the following steps: growing an inorganic two-dimensional interface layer on the surface of a substrate; attaching a thermal release tape to the surface of the substrate / inorganic two-dimensional interface layer and immersing them together in deionized water; after the inorganic two-dimensional interface layer / thermal release tape falls off from the surface of the substrate, taking out the inorganic two-dimensional interface layer / thermal release tape from the deionized water and drying it; attaching the completely dried inorganic two-dimensional interface layer / thermal release tape to the surface of the first transmission layer or the perovskite layer; heating to remove the thermal release tape, thereby preparing the first interface layer or the second interface layer.

[0029] Herein, substrate / inorganic two-dimensional interface layer refers to a whole formed by combining the substrate and the inorganic two-dimensional interface layer, and inorganic two-dimensional interface layer / thermal release tape refers to a whole formed by combining the inorganic two-dimensional interface layer and the thermal release tape.

[0030] Preferably, the inorganic two-dimensional interface layer is an inorganic two-dimensional thin film, especially a single-layer inorganic two-dimensional thin film.

[0031] Among them, preferably, any one of graphene, graphene derivatives, hexagonal boron nitride, black phosphorus, transition metal disulfides, transition metal carbides, transition metal carbonitrides, and graphitic carbon nitride is used, preferably MoS2 or WS2, and more preferably single-layer MoS2 or WS2, to grow an inorganic two-dimensional interface layer on the surface of the substrate.

[0032] Preferably, an inorganic two-dimensional interface layer is grown on the surface of the substrate by chemical vapor deposition.

[0033] Preferably, the substrate may be glass.

[0034] Compared with the prior art, the above-mentioned perovskite solar cell with an interface layer provided by the present invention has an inorganic two-dimensional interface layer that can effectively inhibit the non-radiative recombination of carriers at the perovskite interface, and physically blocks the migration of perovskite ions to the charge transfer layer, thereby increasing the photoelectric conversion efficiency of the battery to more than 26%, stabilizing the perovskite phase and blocking the migration of perovskite ions, thereby enhancing the stability of the battery, and having excellent photoelectric conversion efficiency and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings. In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present invention, are used to provide a further understanding of the present invention, constitute a part of this application, and should not be regarded as limiting the scope of the present invention. Among them:

[0036] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell provided by the present invention;

[0037] Figure 2 A comparison diagram of JV curves of the perovskite solar cell of Example 1 of the present invention and Comparative Example 1;

[0038] Figure 3 It is a comparison diagram of high temperature operation stability tracking curves of the perovskite solar cell of Example 2 of the present invention and Comparative Example 2. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and cannot be understood as limiting the present invention.

[0040] See also Figure 1 , Figure 1The specific structure of a perovskite solar cell with an interface layer provided by the present invention is shown, and the perovskite solar cell comprises a substrate layer 1, a first transmission layer 2, a first interface layer 3, a perovskite layer 4, a second interface layer 5, a second transmission layer 6 and a top electrode layer 7 which are stacked in sequence. Among them, the first interface layer 3 and the second interface layer 5 are both inorganic two-dimensional interface layers, preferably inorganic two-dimensional thin films, and more preferably single-layer inorganic two-dimensional thin films.

[0041] Embodiment 1

[0042] In this embodiment, the substrate layer 1 is ITO glass, the first transmission layer 2 is PTAA, the first interface layer 3 and the second interface layer 5 are both single-layer MoS2, the perovskite layer 4 is FAPbI3, and the second transmission layer 6 is C 60 and BCP, the top electrode layer 7 is metal Ag.

[0043] The method for preparing a perovskite solar cell of this embodiment comprises the following steps:

[0044] S1, cleaning the substrate layer, specifically: selecting ITO glass as substrate layer 1, using detergent aqueous solution, ultrapure water, and isopropyl alcohol to ultrasonically treat the ITO glass respectively, the treatment time of each solution is 20 minutes, after treatment, using N2 to blow dry, and then using UV-O3 to treat for 20 minutes;

[0045] S2. Prepare a first transmission layer on the surface of the substrate layer, specifically: weigh 2 mg of PTAA and 0.2 mg of F4-TCNQ, and dissolve them in 1 mL of chlorobenzene to obtain a PTAA solution, spin-coat the PTAA solution onto the substrate layer 1 at a spin-coating speed of 4000 rpm for 30 seconds, and then anneal at 100° C. for 10 minutes, thereby forming a first transmission layer 2 on the substrate layer 1;

[0046] S3, transferring the inorganic two-dimensional interface layer to the surface of the first transmission layer to form a first interface layer, specifically: growing a single-layer MoS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / MoS2 surface and immersing them together in deionized water, after the MoS2 / thermal release tape falls off from the glass surface, taking out the MoS2 / thermal release tape from the deionized water and drying it, attaching the completely dried MoS2 / thermal release tape to the surface of the first transmission layer 2, heating to remove the thermal release tape, thereby forming a first interface layer 3 on the first transmission layer 2;

[0047] S4. Prepare a perovskite layer on the surface of the first interface layer, specifically: weigh 691.5 mg of PbI2, and dissolve it in a mixed solvent of 0.9 mL of N,N-dimethylformamide and 0.1 mL of dimethyl sulfoxide to obtain a PbI2 solution, weigh 90 mg of FAI and 10 mg of MACl, and dissolve them in 1 mL of isopropanol to obtain a FAI solution, spin-coat the PbI2 solution onto the first interface layer 3 at a spin-coating speed of 2000 rpm for 30 s, then anneal at 70°C for 1 min to obtain a PbI2 thin film, and then spin-coat the FAI solution onto the PbI2 thin film at a spin-coating speed of 2700 rpm for 10 s, then anneal at 150°C for 10 min, thereby forming a perovskite layer 4 on the first interface layer 3;

[0048] S5, transferring the inorganic two-dimensional interface layer to the surface of the perovskite layer to form a second interface layer, specifically: growing a single-layer MoS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / MoS2 surface and immersing them in deionized water together, after the MoS2 / thermal release tape falls off the glass surface, taking out the MoS2 / thermal release tape from the deionized water and drying it, attaching the completely dried MoS2 / thermal release tape to the surface of the perovskite layer 4, heating to remove the thermal release tape, thereby forming a second interface layer 5 on the perovskite layer 4;

[0049] S6, preparing a second transmission layer on the surface of the second interface layer, specifically: vacuum thermally evaporating C with a thickness of 20 nm on the second interface layer 5 in sequence; 60 and 6 nm thick BCP as the second transport layer 6;

[0050] S7 , preparing a top electrode layer on the surface of the second transport layer, specifically: vacuum thermally evaporating Ag with a thickness of 200 nm on the second transport layer 6 as the top electrode layer 7 .

[0051] Through the above steps, the perovskite solar cell with an interface layer of the present invention is prepared.

[0052] Embodiment 2

[0053] In this embodiment, the substrate layer 1 is ITO glass, the first transmission layer 2 is PTAA, the first interface layer 3 and the second interface layer 5 are both single-layer MoS2, the perovskite layer 4 is FAPbI3, and the second transmission layer 6 is C 60 and SnO2, the top electrode layer 7 is ITO and Ag.

[0054] The method for preparing a perovskite solar cell of this embodiment comprises the following steps:

[0055] S1, cleaning the substrate layer, specifically: selecting ITO glass as substrate layer 1, using detergent aqueous solution, ultrapure water, and isopropyl alcohol to ultrasonically treat the ITO glass respectively, the treatment time of each solution is 20 minutes, after treatment, using N2 to blow dry, and then using UV-O3 to treat for 20 minutes;

[0056] S2. Prepare a first transmission layer on the surface of the substrate layer, specifically: weigh 2 mg of PTAA and 0.2 mg of F4-TCNQ, and dissolve them in 1 mL of chlorobenzene to obtain a PTAA solution, spin-coat the PTAA solution onto the substrate layer 1 at a spin-coating speed of 4000 rpm for 30 seconds, and then anneal at 100° C. for 10 minutes, thereby forming a first transmission layer 2 on the substrate layer 1;

[0057] S3, transferring the inorganic two-dimensional interface layer to the surface of the first transmission layer to form a first interface layer, specifically: growing a single-layer MoS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / MoS2 surface and immersing them together in deionized water, after the MoS2 / thermal release tape falls off from the glass surface, taking out the MoS2 / thermal release tape from the deionized water and drying it, attaching the completely dried MoS2 / thermal release tape to the surface of the first transmission layer 2, heating to remove the thermal release tape, thereby forming a first interface layer 3 on the first transmission layer 2;

[0058] S4. Prepare a perovskite layer on the surface of the first interface layer, specifically: weigh 691.5 mg of PbI2, and dissolve it in a mixed solvent of 0.9 mL of N,N-dimethylformamide and 0.1 mL of dimethyl sulfoxide to obtain a PbI2 solution, weigh 90 mg of FAI and 10 mg of MACl, and dissolve them in 1 mL of isopropanol to obtain a FAI solution, spin-coat the PbI2 solution onto the first interface layer 3 at a spin-coating speed of 2000 rpm for 30 s, then anneal at 70°C for 1 min to obtain a PbI2 thin film, and then spin-coat the FAI solution onto the PbI2 thin film at a spin-coating speed of 2700 rpm for 10 s, then anneal at 150°C for 10 min, thereby forming a perovskite layer 4 on the first interface layer 3;

[0059] S5, transferring the inorganic two-dimensional interface layer to the surface of the perovskite layer to form a second interface layer, specifically: growing a single-layer MoS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / MoS2 surface and immersing them in deionized water together, after the MoS2 / thermal release tape falls off the glass surface, taking out the MoS2 / thermal release tape from the deionized water and drying it, attaching the completely dried MoS2 / thermal release tape to the surface of the perovskite layer 4, heating to remove the thermal release tape, thereby forming a second interface layer 5 on the perovskite layer 4;

[0060] S6, preparing a second transmission layer on the surface of the second interface layer, specifically: vacuum thermal evaporation of 20nm thick C on the second interface layer 5 60 Then, SnO2 with a thickness of 10 nm is deposited as the second transmission layer 6;

[0061] S7 , preparing a top electrode layer on the surface of the second transport layer, specifically: first magnetron sputtering 100 nm thick ITO on the second transport layer 6 , and then vacuum thermal evaporating 200 nm thick Ag as the top electrode layer 7 .

[0062] Through the above steps, the perovskite solar cell with an interface layer of the present invention is prepared.

[0063] Embodiment 3

[0064] In this embodiment, the substrate layer 1 is ITO glass, the first transmission layer 2 is PTAA, the first interface layer 3 and the second interface layer 5 are both single-layer WS2, the perovskite layer 4 is FAPbI3, and the second transmission layer 6 is C 60 and BCP, the top electrode layer 7 is metal Ag.

[0065] The method for preparing a perovskite solar cell of this embodiment comprises the following steps:

[0066] S1, cleaning the substrate layer, specifically: selecting ITO glass as substrate layer 1, using detergent aqueous solution, ultrapure water, and isopropyl alcohol to ultrasonically treat the ITO glass respectively, the treatment time of each solution is 20 minutes, after treatment, using N2 to blow dry, and then using UV-O3 to treat for 20 minutes;

[0067] S2. Prepare a first transmission layer on the surface of the substrate layer, specifically: weigh 2 mg of PTAA and 0.2 mg of F4-TCNQ, and dissolve them in 1 mL of chlorobenzene to obtain a PTAA solution, spin-coat the PTAA solution onto the substrate layer 1 at a spin-coating speed of 4000 rpm for 30 seconds, and then anneal at 100° C. for 10 minutes, thereby forming a first transmission layer 2 on the substrate layer 1;

[0068] S3, transferring the inorganic two-dimensional interface layer to the surface of the first transmission layer to form a first interface layer, specifically: growing a single layer of WS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / WS2 surface and immersing them together in deionized water, after the WS2 / thermal release tape falls off from the glass surface, taking out the WS2 / thermal release tape from the deionized water and drying it, attaching the completely dried WS2 / thermal release tape to the surface of the first transmission layer 2, heating to remove the thermal release tape, thereby forming a first interface layer 3 on the first transmission layer 2;

[0069] S4. Prepare a perovskite layer on the surface of the first interface layer, specifically: weigh 691.5 mg of PbI2, and dissolve it in a mixed solvent of 0.9 mL of N,N-dimethylformamide and 0.1 mL of dimethyl sulfoxide to obtain a PbI2 solution, weigh 90 mg of FAI and 10 mg of MACl, and dissolve them in 1 mL of isopropanol to obtain a FAI solution, spin-coat the PbI2 solution onto the first interface layer 3 at a spin-coating speed of 2000 rpm for 30 s, then anneal at 70°C for 1 min to obtain a PbI2 thin film, and then spin-coat the FAI solution onto the PbI2 thin film at a spin-coating speed of 2700 rpm for 10 s, then anneal at 150°C for 10 min, thereby forming a perovskite layer 4 on the first interface layer 3;

[0070] S5, transferring the inorganic two-dimensional interface layer to the surface of the perovskite layer to form a second interface layer, specifically: growing a single layer of WS2 film on the glass surface by chemical vapor deposition, attaching a thermal release tape to the glass / WS2 surface and immersing them together in deionized water, after the WS2 / thermal release tape falls off from the glass surface, taking out the WS2 / thermal release tape from the deionized water and drying it, attaching the completely dried WS2 / thermal release tape to the surface of the perovskite layer 4, heating to remove the thermal release tape, thereby forming a second interface layer 5 on the perovskite layer 4;

[0071] S6, preparing a second transmission layer on the surface of the second interface layer, specifically: vacuum thermally evaporating C with a thickness of 20 nm on the second interface layer 5 in sequence; 60 and 6 nm thick BCP as the second transport layer 6;

[0072] S7 , preparing a top electrode layer on the surface of the second transport layer, specifically: vacuum thermally evaporating Ag with a thickness of 200 nm on the second transport layer 6 as the top electrode layer 7 .

[0073] Through the above steps, the perovskite solar cell with an interface layer of the present invention is prepared.

[0074] Comparative Example 1

[0075] In this comparative example, the structure of the perovskite solar cell differs from that of the above-mentioned embodiment 1 only in that there is no first interface layer 3 and the second interface layer 5; meanwhile, the preparation method differs from that of the preparation method in the above-mentioned embodiment 1 only in that it does not contain the corresponding steps for preparing the first interface layer 3 and the second interface layer 5.

[0076] Comparative Example 2

[0077] In this comparative example, the structure of the perovskite solar cell differs from that of the above-mentioned embodiment 2 only in that there is no first interface layer 3 and the second interface layer 5; meanwhile, the preparation method differs from that of the preparation method in the above-mentioned embodiment 2 only in that it does not contain the corresponding steps for preparing the first interface layer 3 and the second interface layer 5.

[0078] in, Figure 2 The JV test curves of the perovskite solar cell in Example 1 and the perovskite solar cell in Comparative Example 1 are shown. From the test results, it can be seen that the photoelectric conversion efficiency of the perovskite solar cell prepared in Example 1 is 26.4%, which is significantly better than the perovskite solar cell prepared in Comparative Example 1.

[0079] Further, Figure 3 The high temperature operation stability tracking curves of the perovskite solar cell in Example 2 and the perovskite solar cell in Comparative Example 2 are shown. The battery is packaged and continuously outputs at the maximum power point under AM 1.5G lighting in an 85°C ambient atmosphere. From the test results, it can be seen that the perovskite solar cell prepared in Example 2 still retains 96% of the initial efficiency after 1200 hours of continuous operation, and its stability is significantly better than that of the perovskite solar cell prepared in Comparative Example 2.

[0080] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention without departing from the principles and purpose of the present invention.

Claims

1. A perovskite solar cell having an interface layer, characterized in that: The perovskite solar cell comprises a substrate layer (1), a first transmission layer (2), a first interface layer (3), a perovskite layer (4), a second interface layer (5), a second transmission layer (6) and a top electrode layer (7) which are stacked in sequence; wherein the first interface layer (3) and the second interface layer (5) are inorganic two-dimensional interface layers.

2. The perovskite solar cell according to claim 1, characterized in that The inorganic two-dimensional interface layer is an inorganic two-dimensional thin film.

3. The perovskite solar cell according to claim 1, characterized in that The inorganic two-dimensional interface layer is a single-layer inorganic two-dimensional thin film.

4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that: The material of the inorganic two-dimensional interface layer is any one of graphene, graphene derivatives, hexagonal boron nitride, black phosphorus, transition metal disulfide, transition metal carbide, transition metal carbonitride, and graphite carbon nitride.

5. A method for preparing a perovskite solar cell according to any one of claims 1 to 4, characterized in that: The preparation method comprises the following steps: S1, cleaning the base layer (1); S2, preparing a first transmission layer (2) on the surface of the base layer (1); S3, transferring the inorganic two-dimensional interface layer onto the surface of the first transmission layer (2) to form a first interface layer (3); S4, preparing a perovskite layer (4) on the surface of the first interface layer (3); S5, transferring the inorganic two-dimensional interface layer onto the surface of the perovskite layer (4) to form a second interface layer (5); S6, preparing a second transmission layer (6) on the surface of the second interface layer (5); S7. Preparing a top electrode layer (7) on the surface of the second transport layer (6), that is, preparing the perovskite solar cell with an interface layer.

6. The preparation method according to claim 5, characterized in that: In step S3 or step S5, the step of transferring the inorganic two-dimensional interface layer onto the surface of the first transmission layer (2) or the perovskite layer (4) specifically comprises the following steps: Growing the inorganic two-dimensional interface layer on the surface of the substrate; A thermal release tape is attached to the surface of the substrate / inorganic two-dimensional interface layer and then immersed in deionized water together; After the inorganic two-dimensional interface layer / thermal release tape falls off from the surface of the substrate, the inorganic two-dimensional interface layer / thermal release tape is taken out from the deionized water and dried; affixing a completely dried inorganic two-dimensional interface layer / thermal release tape to the surface of the first transmission layer (2) or the perovskite layer (4); The heat release tape is removed by heating, thereby preparing the first interface layer (3) or the second interface layer (5).

7. The preparation method according to claim 6, characterized in that: The inorganic two-dimensional interface layer is grown on the surface of the substrate using any one of graphene, graphene derivatives, hexagonal boron nitride, black phosphorus, transition metal disulfide, transition metal carbide, transition metal carbonitride, and graphitic carbon nitride.

8. The preparation method according to claim 7, characterized in that: The inorganic two-dimensional interface layer is grown on the surface of the substrate using MoS2 or WS2.

9. The preparation method according to any one of claims 6 to 8, characterized in that: The inorganic two-dimensional interface layer is grown on the surface of the substrate by chemical vapor deposition.

10. The preparation method according to claim 9, characterized in that: The substrate is glass.

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