Display panel, preparation method thereof and display device

Abstract

The application provides a display panel, a preparation method thereof and a display device. The display panel comprises a silicon substrate and a cover plate arranged on the silicon substrate, the silicon substrate comprises a binding pad area, the display panel has a first cutting edge, and the cover plate has a second cutting edge; the first cutting edge is formed by cutting the cover plate from the position corresponding to the second cutting groove on the second surface towards the silicon substrate and cutting the silicon substrate from the position corresponding to the second cutting groove on the surface of the silicon substrate towards the inside of the silicon substrate; and the second cutting edge is formed by cutting the cover plate from the position corresponding to the first cutting groove on the second surface towards the silicon substrate. The display panel has good display effect, avoids adverse problems such as black screen, and improves the product yield and product competitiveness of the display panel.

Description

TECHNICAL FIELD

[0001] The present application generally relates to the technical field of display, and in particular to a display panel, a preparation method thereof and a display device. BACKGROUND

[0002] At present, the silicon-based OLED display device is applied in AR / VR devices. Since the user will appear in different environments, the reliability and service life of the OLED device are required to be very high. In the related art, the OLED display module is usually cut from the back of the wafer. After 90% of the cutting is completed, about 100 um is reserved. By pressing the split piece, the silicon substrate is cracked by pressure. There will be irregular damage of the silicon substrate. Meanwhile, the glass cover plate (CG) is cut by the split piece method. The dummy CG strip in the bonding pad position has a risk of damage, which causes the cover glass (CG) corresponding to the display area (AA area) after cutting to collide with the cover glass corresponding to the bonding pad area. The glass cover plate debris will scratch the lower silicon wafer and the circuit, causing black screen defects. SUMMARY

[0003] In view of the above defects or deficiencies in the prior art, it is desirable to provide a display panel, a preparation method thereof and a display device. By cutting the cover plate and the silicon substrate to form a first cutting edge and a second cutting edge, respectively, it is beneficial to avoid the edge collapse or damage of the silicon substrate and the cover plate, thereby avoiding damage to the circuit and other structures on the silicon substrate, and further beneficial to ensure that the display panel has good display effect, avoids black screen and other defects, and improves the product yield and product competitiveness of the display panel.

[0004] In a first aspect, the present application provides a display panel, comprising a silicon substrate and a cover plate arranged on the silicon substrate, the silicon substrate comprising a bonding pad area, the display panel having a first cutting edge, and the cover plate having a second cutting edge, the second cutting edge being recessed relative to the first cutting edge to expose the bonding pad area, the cover plate having oppositely arranged first and second surfaces;

[0005] The first cutting edge is formed by penetrating and cutting the cover plate from the position of the second surface corresponding to the second cutting groove towards the direction of the silicon substrate, and penetrating and cutting the silicon substrate from the position of the surface of the silicon substrate corresponding to the second cutting groove towards the inside of the silicon substrate;

[0006] The second cutting edge is formed by penetrating and cutting the cover plate from the position of the second surface corresponding to the first cutting groove towards the direction of the silicon substrate, wherein the first and second cutting grooves are spaced apart and arranged on the first surface, the first cutting groove is located in the region of the first surface corresponding to the bonding pad area, and the position of the second cutting groove corresponds to a preset cutting path.

[0007] As an optional solution, the interval between the first cutting edge and the second cutting edge is 1.0mm-1.5mm.

[0008] As an optional solution, the first cutting edge is formed with a first chamfer on the surface of the silicon substrate away from the cover plate.

[0009] As an optional solution, the first cutting edge is formed with a second chamfer on the second surface of the cover plate.

[0010] In a second aspect, the present application provides a preparation method of a display panel, the display panel comprising a silicon substrate and a cover plate, the silicon substrate comprising a bonding pad area, and the cover plate having a first surface and a second surface arranged oppositely; the preparation method comprising the following steps:

[0011] A first cutting groove and a second cutting groove are spaced apart on the first surface of the cover plate, the first cutting groove and the second cutting groove respectively extend inwardly from the first surface and do not penetrate the cover plate, the first cutting groove is located in a region of the cover plate corresponding to the bonding pad area, and the position of the second cutting groove corresponds to a preset cutting path;

[0012] A third cutting groove is formed on the silicon substrate, and a fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove, so as to form a first cutting edge; wherein the position of the third cutting groove corresponds to the position of the second cutting groove, the third cutting groove extends from the surface of the silicon substrate to the interior and penetrates the silicon substrate; the fourth cutting groove extends from the second surface to the direction of the silicon substrate and penetrates the cover plate;

[0013] A fifth cutting groove is formed on the second surface at a position corresponding to the first cutting groove, the fifth cutting groove extends inwardly to communicate with the first cutting groove, so as to form a second cutting edge;

[0014] The region between the first cutting edge and the second cutting edge on the cover plate is removed, so as to expose the bonding pad area.

[0015] As an optional solution, the third cutting groove comprises a first sub-cutting groove, the third cutting groove is formed on the surface of the silicon substrate away from the cover plate, and the fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove, comprising:

[0016] The first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate to the direction of the cover plate and does not penetrate the silicon substrate;

[0017] The fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove, the fourth cutting groove penetrates the cover plate to the interior of the silicon substrate in the direction of the silicon substrate and communicates with the first sub-cutting groove.

[0018] As an optional solution, the first sub-cutting groove comprises a first part and a second part, the first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, comprising:

[0019] a first portion is formed on the surface of the silicon substrate away from the cover plate and extends inwardly, the first portion comprises a groove bottom and two opposite side surfaces which are inclined towards different directions, and the first portion is configured as a first chamfer of the first cutting edge;

[0020] a second portion is formed in the silicon substrate, the second portion extends inwardly from the groove bottom of the first portion and does not penetrate the silicon substrate, and a first sub-cutting groove is formed.

[0021] As an optional solution, the included angle between the two opposite side surfaces of the first portion ranges from 85° to 95°.

[0022] As an optional solution, the size of the first portion in its extension direction is 0.14 to 0.19 times the thickness of the silicon substrate.

[0023] As an optional solution, the size of the first sub-cutting groove in its extension direction is 0.9 to 0.96 times the thickness of the silicon substrate.

[0024] As an optional solution, the third cutting groove comprises a first sub-cutting groove and a second sub-cutting groove, a third cutting groove is formed on the surface of the silicon substrate away from the cover plate, and a fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove, comprising:

[0025] a first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate towards the direction of the cover plate and does not penetrate the silicon substrate;

[0026] a fourth cutting groove is formed at a position corresponding to the second cutting groove on the second surface, the fourth cutting groove extends towards the direction of the silicon substrate to the second cutting groove in communication, so that the silicon substrate is exposed in the fourth cutting groove;

[0027] a second sub-cutting groove is formed in the silicon substrate, the second sub-cutting groove extends inwardly from the surface of the silicon substrate exposed in the fourth cutting groove to communicate with the first sub-cutting groove.

[0028] As an optional solution, the fourth cutting groove comprises a first region and a second region, the fourth cutting groove is formed at a position corresponding to the second cutting groove on the second surface, comprising:

[0029] a first region is formed on the second surface and extends towards the inside, the first region has a groove bottom and two opposite side surfaces which are inclined towards different directions, and the first region is configured as a chamfer of the fourth cutting groove;

[0030] a second region is formed on the cover plate, the second region extends inwardly from the groove bottom of the first region to communicate with the second cutting groove, and forms the fourth cutting groove;

[0031] As an optional solution, the included angle between the two opposite side surfaces of the first region ranges from 85° to 95°.

[0032] As an optional solution, the size of the first region in the extending direction is 0.15-0.21 times of the thickness of the cover plate.

[0033] As an optional solution, the removing of the region of the cover plate between the first cutting edge and the second cutting edge comprises:

[0034] bonding the carrier film on the cover plate so that the region of the cover plate between the first cutting edge and the second cutting edge is fixedly bonded with the carrier film;

[0035] removing the carrier film so that the region of the cover plate between the first cutting edge and the second cutting edge is removed together with the carrier film.

[0036] As an optional solution, in the process of spacing the first cutting groove and the second cutting groove on the first surface of the cover plate, the distance between the first cutting groove and the second cutting groove is 1.0-1.5 mm.

[0037] As an optional solution, in the process of spacing the first cutting groove and the second cutting groove on the first surface of the cover plate, the size of the first cutting groove and the second cutting groove in the extending direction is 0.08-0.14 times of the thickness of the cover plate.

[0038] Third aspect. The application provides a display device comprising the display panel of the first aspect or comprising the display panel prepared according to the preparation method of the second aspect.

[0039] The display panel of the application, by penetratingly cutting the cover plate from the position corresponding to the second cutting groove on the second surface of the cover plate towards the direction of the silicon substrate and penetratingly cutting the silicon substrate from the position corresponding to the second cutting groove on the surface of the silicon substrate towards the inside of the silicon substrate to form the first cutting edge of the display panel, and by penetratingly cutting the cover plate from the position corresponding to the first cutting groove on the second surface towards the direction of the silicon substrate to form the second cutting edge of the cover plate, so that the binding pad region is exposed; in this way, it is beneficial to avoid the edge collapse or damage of the silicon substrate and the cover plate, thereby avoiding the damage to the circuit structure on the silicon substrate, and further beneficial to ensure that the display panel has good display effect, avoid the problem of black screen, and improve the product yield and product competitiveness of the display panel. BRIEF DESCRIPTION OF DRAWINGS

[0040] Other features, objects and advantages of the application will become more apparent from the following detailed description of non-limiting embodiments made with reference to the following drawings:

[0041] Figure 1 A schematic diagram of the cutting of the display panel in the prior art;

[0042] Figure 2 A schematic diagram of the cross section of the display panel in the prior art;

[0043] Figure 3 A schematic diagram of a preparation method of a display panel in the prior art;

[0044] Figure 4 A schematic diagram of a structure of a display panel of an embodiment of the present application;

[0045] Figure 5 A schematic diagram of a front structure of a display panel of an embodiment of the present application;

[0046] Figure 6 A schematic diagram of a cross-sectional structure of a display panel of an embodiment of the present application;

[0047] Figure 7 A schematic diagram of a preparation method structure of a display panel of an embodiment of the present application;

[0048] Figure 8 A schematic diagram of a structure of fixing a cover plate and a carrier film in a preparation method of a display panel of an embodiment of the present application;

[0049] Figure 9 A schematic diagram of a structure of forming a first cutting groove and a second cutting groove on a cover plate in a preparation method of a display panel of an embodiment of the present application;

[0050] Figure 10 A schematic diagram of a structure of attaching a cover plate and a silicon substrate in a preparation method of a display panel of an embodiment of the present application;

[0051] Figure 11 A schematic diagram of a structure of fixing a cover plate and a silicon substrate on a carrier film in a preparation method of a display panel of an embodiment of the present application;

[0052] Figure 12 A schematic diagram of a structure of a first part of a first sub-cutting groove on a silicon substrate in a preparation method of a display panel of an embodiment of the present application;

[0053] Figure 13 A schematic diagram of a structure of a first sub-cutting groove on a silicon substrate in a preparation method of a display panel of an embodiment of the present application;

[0054] Figure 14 A schematic diagram of a structure of a first area of a fourth cutting groove on a cover plate in a preparation method of a display panel of an embodiment of the present application;

[0055] Figure 15 A schematic diagram of a structure of a fourth cutting groove on a cover plate in a preparation method of a display panel of an embodiment of the present application;

[0056] Figure 16 A schematic diagram of a structure of a fifth cutting groove on a cover plate in a preparation method of a display panel of an embodiment of the present application;

[0057] Figure 17FIG. 1 is a schematic diagram of a structure for fixing a cover plate to a carrier film after cutting and coating of a display panel of an embodiment of the present application.

[0058] In the drawings,

[0059] 1, cutout; 2, crack;

[0060] B1, first cutting edge; B2, second cutting edge;

[0061] 10, silicon substrate; 11, display layer; 111, first electrode; 112, light-emitting layer; 113, second electrode; 12, encapsulation layer; 121, first inorganic encapsulation layer; 122, second inorganic encapsulation layer; 13, color film layer; 14, third cutting groove; 141, first sub-cutting groove; 1411, first portion; 1412, second portion; 142, second sub-cutting groove

[0062] 20, cover plate; 21, first cutting groove; 22, second cutting groove; 23, fourth cutting groove; 231, first region; 232, second region; 24, fifth cutting groove;

[0063] 30, carrier film; 40, flexible circuit board. DETAILED DESCRIPTION

[0064] The present application will be further described below in conjunction with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the related application, and are not a limitation on the application. In addition, it should be noted that only the parts related to the application are shown in the drawings for ease of description.

[0065] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0066] In the related art, in the manufacturing process of an OLED display panel, such as Figures 1-3As shown, after the cover plate and the silicon substrate are attached, the silicon substrate 10 (back plate) or wafer back surface is cut, and the silicon substrate 10 is cut to about 90% of the back surface, and a reserved area (about 100 μm) is reserved, and the silicon substrate 10 is cracked from the cut 1 by applying pressure F to the silicon substrate 10. This method has the problem of irregular damage of the silicon substrate 10. The cutting of the cover plate 20 is usually to form a cutting path (a shallow scratch formed by a cutting tool, not shown in the figure) on the cover plate 20 in advance, and then the cover plate 20 is cracked from the cutting path by applying pressure F to the cover plate 20 to produce a crack 2. Since at least two cutting paths are formed on the cover plate 20, the area of the cover plate 20 corresponding to the bonding pad area of the silicon substrate 10 is prone to damage due to pressure during the application of pressure to the cover plate 20, and the cover plate 20 in the display area (AA) and the cover plate 20 in the bonding pad area are prone to collision after cutting, which can damage the structure of the bonding pad area and other circuit structures on the silicon substrate 10, thereby causing black screen and other problems.

[0067] Based on the above problems, embodiments of the present application provide a display panel, as shown in Figures 4-7 As shown, the display panel includes a silicon substrate 10 and a cover plate 20 arranged on the silicon substrate 10, the silicon substrate 10 includes a bonding pad area, the display panel has a first cutting edge A1, the cover plate 20 has a second cutting edge A2, the second cutting edge A2 is recessed relative to the first cutting edge A1 to expose the bonding pad area, and the cover plate 20 has oppositely arranged first and second surfaces;

[0068] The first cutting edge A1 is formed by penetrating and cutting the cover plate 20 from the position of the second surface corresponding to the second cutting groove 22 towards the silicon substrate 10, and penetrating and cutting the silicon substrate 10 from the position of the surface of the silicon substrate 10 corresponding to the second cutting groove 22 towards the inside of the silicon substrate 10;

[0069] The second cutting edge A2 is formed by penetrating and cutting the cover plate 20 from the position of the second surface corresponding to the first cutting groove 21 towards the silicon substrate 10, wherein the first cutting groove 21 and the second cutting groove 22 are spaced apart on the first surface, the first cutting groove 21 is located in the area of the first surface corresponding to the bonding pad area, and the position of the second cutting groove 22 corresponds to a preset cutting path.

[0070] It should be noted that the silicon substrate 10 in the embodiment can be understood as a backplane of a display panel, and the cover plate 20 is arranged on the silicon substrate 10 and is mainly used for user structure on the silicon substrate 10. The silicon substrate 10 can include a silicon substrate, and a driving layer, a display layer 11 and a touch layer and the like arranged in a stack along a direction away from the silicon substrate, and the cover plate 20 can be but is not limited to glass and the like. In some embodiments, the cover plate 20 is slightly smaller than the size of the silicon substrate 10, and a certain distance is left around, which is beneficial to ensure light transmission and facilitate positioning and fixing of the display panel.

[0071] The driving layer can include a plurality of pixel driving circuits arranged in an array. The pixel driving circuit can include a plurality of transistors and capacitors and the like. For example, the pixel driving circuit can include three transistors and one capacitor, forming 3T1C (i.e., one driving transistor, two switching transistors and one capacitor). It can also include more than three transistors and at least one capacitor, such as 4T1C (i.e., one driving transistor, three switching transistors and one capacitor), 5T1C (i.e., one driving transistor, four switching transistors and one capacitor) or 7T1C (i.e., one driving transistor, six switching transistors and one capacitor), etc. The transistor can be a thin film transistor (TFT).

[0072] It can be understood that the thin film transistor can include a control electrode, a first electrode and a second electrode. The control electrode is the gate electrode of the thin film transistor, the first electrode is one of the source electrode and the drain electrode of the thin film transistor, and the second electrode is the other of the source electrode and the drain electrode of the thin film transistor.

[0073] In some embodiments, the driving layer can include an active layer, a first gate metal layer (Gate1), a second gate metal layer (Gate2), a first metal wiring layer (SD1) and a second metal wiring layer (SD2), which are configured to form thin film transistors, capacitors and a plurality of signal lines for pixel driving in the pixel driving circuit. For example, the plurality of signal lines can include power signal lines, data signal lines, reset signal lines, scanning signal lines and enable signal lines, initialization signal lines and the like. The driving layer can further include an insulating layer for spacing the film layers.

[0074] The display layer 11 can include a light emitting device layer and an encapsulation layer 12. The light emitting device layer is stacked on the side of the driving layer away from the silicon substrate. The light emitting device layer can include a pixel defining layer and a plurality of light emitting devices. The pixel defining layer has a plurality of pixel openings, one pixel opening defining the position of one light emitting device. The light emitting device can be an OLED light emitting device or a QLED light emitting device, for example. Taking an OLED light emitting device as an example, the light emitting device can include a first electrode 111, a light emitting layer 112 and a second electrode 113 stacked in sequence in the direction away from the substrate. Of course, the light emitting device can also include at least one of a hole injection layer, a hole transport layer and an electron blocking layer disposed between the first electrode 111 and the light emitting layer 112, and at least one of an electron injection layer, an electron transport layer and a hole blocking layer disposed between the second electrode 113 and the light emitting layer 112; in some embodiments, the first electrode 111 can be an anode, and the second electrode 113 can be a cathode. The structure of the anode can be a composite structure composed of a transparent conductive oxide film / metal film / transparent conductive oxide film stacked in sequence. The material of the transparent conductive oxide film can be any one of ITO (Indium tin oxide) and IZO (Indium zinc oxide), for example, and the material of the metal film can be any one of gold (Au), silver (Ag), nickel (Ni) and platinum (Pt), for example. For another example, the structure of the anode can also be a single-layer structure, and the material of the single-layer structure can be any one of ITO, IZO, Au, Ag, Ni and Pt. Each pixel opening exposes a part of the anode of the corresponding light emitting device, and at least a part of the light emitting layer 112 is located in the corresponding pixel opening and forms an electrical connection with the corresponding anode. For example, the cathodes of the light emitting devices can be electrically connected to each other and form an integrated structure. The material of the cathode can be any one of aluminum (Al), silver (Ag) and magnesium (Mg), or any one of magnesium-silver alloy and aluminum-lithium alloy, for example.

[0075] The encapsulation layer 12 is arranged on the side of the light emitting device layer away from the substrate, to protect the light emitting device. The encapsulation layer 12 can include a first inorganic encapsulation layer 121, an organic encapsulation layer 122, and a second inorganic encapsulation layer 122. For example, the first inorganic encapsulation layer 121 and the second inorganic encapsulation layer 122 can be made of inorganic materials such as nitride, oxide, oxynitride, nitrate, carbide, or any combination thereof, and the preparation process can be a chemical vapor deposition (CVD) process, such as a plasma enhanced chemical vapor deposition (PECVD) process. For example, the organic insulating layer can be made of materials such as acrylic, hexamethyl disiloxane, polyacrylate, polycarbonate, polystyrene, etc., and the preparation process can be an ink jet printing (IJP) process.

[0076] In some embodiments, the display layer 11 further includes a color filter layer 13 arranged on the side of the encapsulation layer 12 away from the silicon substrate. The color filter layer 13 can include a first color filter unit, a second color filter unit, and a third color filter unit. The first color filter unit, the second color filter unit, and the third color filter unit are color filter units of different colors. The first color filter unit, the second color filter unit, and the third color filter unit can have different thicknesses or the same thickness, or two of them have the same thickness and the other has a different thickness.

[0077] In some embodiments, the color filter layer 13 does not overlap between adjacent color filter units, and the color filter layer 13 further includes a black matrix arranged between adjacent color filter units to absorb ambient light, reduce ambient light reflection of the display panel, and achieve a dark state when the screen is off. Of course, in other embodiments, the first color filter unit and the second color filter unit can have a first overlap region, the second color filter unit and the third color filter unit can have a second overlap region, and the third color filter unit and the first color filter unit can have a third overlap region. When two color filter units of different colors overlap, the light transmittance of the overlap region is low, so it can be used as a black matrix. Therefore, the first overlap region, the second overlap region, and the third overlap region of the display panel can all be used as black matrices, achieving the effect of light shielding without the need for additional black matrices.

[0078] The touch layer is used to realize the touch function. The touch layer can be arranged between the encapsulation layer 12 and the color filter layer 13 to realize an in-screen touch structure, which is beneficial to reducing the thickness of the display panel. Of course, in other embodiments, the touch layer can also be arranged at other positions of the display panel, and the embodiments of the present application do not limit this.

[0079] It can be understood that the silicon substrate 10 has a display area for light emitting display and a peripheral area located at the periphery of the display area, the peripheral area includes a binding pad area which can be but is not limited to used for binding with an FPC (flexible circuit board 40) to realize electrical connection so as to realize transmission of external signals, and other areas, the flexible circuit board can be used to provide electrical signals to drive the pixel circuit to work and drive display; the other areas of the peripheral area can also be used to install other structures according to actual product requirements, etc.

[0080] It can also be understood that the display panel has a first cutting edge A1, which is generated after cutting the silicon substrate 10 and the cover plate 20, in the embodiment, the first cutting edge A1 is formed by cutting the cover plate 20 from the position corresponding to the second cutting groove 22 on the second surface to the direction of the silicon substrate 10 and cutting the silicon substrate 10 from the position corresponding to the second cutting groove 22 on the surface of the silicon substrate 10 to the inside of the silicon substrate 10, the first cutting edge A1 is relatively regular and flat, without burr and other adverse problems, thus avoiding the problem of damage to the binding pad and circuit structure on the silicon substrate 10 caused by the collapse and damage of the silicon substrate 10 and the cover plate 20, and facilitating the subsequent process of the silicon substrate 10.

[0081] The cover plate 20 has a second cutting edge A2, which is formed by cutting the cover plate 20 from the position corresponding to the first cutting groove 21 on the second surface to the direction of the silicon substrate 10, that is, the second cutting edge A2 is only formed on the cover plate 20, the second cutting edge A2 is mainly used to separate the area of the cover plate 20 corresponding to the binding pad area from the area of the cover plate 20 corresponding to the display area, so as to facilitate the exposure of the binding pad and realize the binding of the silicon substrate 10 and the flexible circuit board. The second cutting edge A2 formed in the embodiment is relatively regular and flat, without burr and other adverse problems, thus avoiding the damage to the binding pad caused by the collapse of the cover plate 20 or the area of the cover plate 20 corresponding to the display area.

[0082] The display panel of the embodiment of the present application solves the problems of black screen and poor yield of the display panel in the related art. The display panel of the embodiment of the present application forms the first cutting edge A1 of the display panel by penetrating and cutting the cover plate 20 from the position corresponding to the second cutting groove 22 on the second surface of the cover plate 20 towards the direction of the silicon substrate 10 and penetrating and cutting the silicon substrate 10 from the position corresponding to the second cutting groove 22 on the surface of the silicon substrate 10 towards the inside of the silicon substrate 10, forms the second cutting edge A2 of the cover plate 20 by penetrating and cutting the cover plate 20 from the position corresponding to the first cutting groove 21 on the second surface towards the direction of the silicon substrate 10, and exposes the bonding pad area. In this way, it is beneficial to avoid the edge collapse or damage of the silicon substrate 10 and the cover plate 20, thereby avoiding the damage to the circuit and other structures on the silicon substrate 10, and further beneficial to ensure that the display panel has good display effect, avoid the problems of black screen and the like, and improve the product yield and product competitiveness of the display panel.

[0083] In some embodiments, the interval d between the first cutting edge A1 and the second cutting edge A2 is 1.0 mm-1.5 mm.

[0084] In the present embodiment, the interval d between the first cutting edge A1 and the second cutting edge A2 is beneficial to completely expose the bonding pad, and facilitates the setting of the boundary region of the silicon substrate 10. Figure 7

[0085] Specifically, the interval d between the first cutting edge A1 and the second cutting edge A2 can be but is not limited to 1.0 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm or 1.5 mm, etc.

[0086] In the present embodiment, the interval d between the first cutting edge A1 and the second cutting edge A2 is beneficial to completely expose the bonding pad, and facilitates the setting of the boundary region of the silicon substrate 10.

[0087] As a realizable manner, the first cutting edge A1 is formed with a first chamfer on the surface of the silicon substrate 10 away from the cover plate 20.

[0088] In the present embodiment, the first chamfer of the first cutting edge A1 is beneficial to ensure that the silicon substrate 10 is not damaged by edge collapse during cutting, thereby facilitating the subsequent process of the silicon substrate 10.

[0089] As a realizable manner, the first cutting edge A1 is formed with a second chamfer on the second surface of the cover plate 20.

[0090] In the present embodiment, the second chamfer of the first cutting edge A1 is beneficial to ensure that the silicon substrate 10 is not damaged by edge collapse during cutting, thereby facilitating the subsequent process of the silicon substrate 10.

[0091] In the present embodiment, the second chamfer of the first cutting edge A1 is beneficial to ensure that the silicon substrate 10 is not damaged by edge collapse during cutting, thereby facilitating the subsequent process of the silicon substrate 10. ​

[0092] In this embodiment, the second chamfer of the first cutting edge A1 is advantageous to ensure that the cover plate 20 does not collapse and lose during cutting, thereby being advantageous to ensure the structure of the cover plate 20, to protect the bonding pad or circuit structure on the silicon substrate 10, and to facilitate subsequent processes.

[0093] In a preferred embodiment, the first cutting edge A1 is simultaneously formed with a first chamfer on the surface of the silicon substrate 10 away from the cover plate 20 and a second chamfer on the second surface of the cover plate 20.

[0094] As an implementable manner, the second cutting edge A2 can also be formed with a chamfer on the first surface and / or the second surface of the cover plate 20.

[0095] In this embodiment, the yield of the display panel and the product competitiveness are further improved.

[0096] In a second aspect, embodiments of the present application provide a display panel manufacturing method, the display panel comprising a silicon substrate 10 and a cover plate 20, the silicon substrate 10 comprising a bonding pad area, and the cover plate 20 having a first surface and a second surface arranged opposite to each other; as shown, the manufacturing method comprises the following steps: Figure 7

[0097] Step S10, a first cutting groove 21 and a second cutting groove 22 are spaced apart on the first surface of the cover plate 20, the first cutting groove 21 and the second cutting groove 22 respectively extend inward from the first surface and do not penetrate the cover plate 20, the first cutting groove 21 is located in the region of the cover plate 20 corresponding to the bonding pad area, and the position of the second cutting groove 22 corresponds to a preset cutting path;

[0098] The preset cutting path refers to a position where the silicon substrate 10 and the cover plate 20 need to be cut according to actual processing requirements; the preset cutting path in this embodiment can be virtual, and of course can be a relatively shallow scratch or mark formed on the cover plate 20, etc.

[0099] The first cutting groove 21 is located in the region of the cover plate 20 corresponding to the bonding pad area, which is advantageous to facilitate the exposure of the bonding pad area after cutting the cover plate 20 at the positions of the first cutting groove 21 and the second cutting groove 22;

[0100] The first cutting groove 21 and the second cutting groove 22 are spaced apart, which is advantageous to form the second cutting edge A2 which is recessed relative to the first cutting edge A1 in a direction parallel to the silicon substrate 10;

[0101] ​Step S20, a third cutting groove 14 is formed on the silicon substrate 10, and a fourth cutting groove 23 is formed on the second surface of the cover plate 20 corresponding to the position of the second cutting groove 22, so as to form a first cutting edge A1; wherein the position of the third cutting groove 14 corresponds to the position of the second cutting groove 22, and the third cutting groove 14 extends from the surface of the silicon substrate 10 to the inside; the fourth cutting groove 23 extends from the second surface to the direction of the silicon substrate 10;

[0102] Wherein, the third cutting groove 14 is formed on the silicon substrate 10, and the third cutting groove 14 can directly extend through the silicon substrate 10; of course, the third cutting groove 14 can also only extend to a certain area inside the silicon substrate 10, and the fourth cutting groove 23 is formed on the second surface of the cover plate 20, and the fourth cutting groove 23 extends through the cover plate 20 to the inside of the silicon substrate 10, so that the third cutting groove 14 and the fourth cutting groove 23 are communicated, and the third cutting groove 14 extends through the silicon substrate 10; of course, part of the third cutting groove 14 extends from the surface of the silicon substrate 10 away from the cover plate 20 to a certain area inside the silicon substrate 10 without extending through the silicon substrate 10, and the remaining area of the third cutting groove 14 extends from the surface of the silicon substrate 10 to the inside of the silicon substrate 10 to communicate with the above-mentioned part of the third cutting groove 14, so that the third cutting groove 14 extends through the silicon substrate 10, which is determined according to the actual processing technology.

[0103] Step S30, a fifth cutting groove 24 is formed on the second surface corresponding to the position of the first cutting groove 21, and the fifth cutting groove 24 extends inwardly to communicate with the first cutting groove 21, so as to form a second cutting edge A2;

[0104] Wherein, the fifth cutting groove 24 and the first cutting groove 21 are communicated, so as to realize the cutting through the cover plate 20, which is beneficial to form the second cutting edge A2.

[0105] Step S40, the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is removed to expose the bonding pad area.

[0106] Wherein, the removal mode can be but is not limited to grabbing by a mechanical arm, gluing or sucking by a suction cup.

[0107] It should be noted that the extension direction of the first cutting groove 21, the second cutting groove 22, the third cutting groove 14, the fourth cutting groove 23 and the fifth cutting groove 24 in the embodiments of the present application can be perpendicular to the direction of the silicon substrate 10 (such as Figure 7 Y direction in the middle), which is beneficial to facilitate processing and subsequent processing procedures.

[0108] The display panel manufacturing method of the embodiments of the present application solves the problem that the existing cutting method is easy to cause damage to the silicon substrate 10 and the cover plate 20, resulting in display panel display failure such as black screen. The display panel manufacturing method of the embodiments of the present application forms a first cutting edge A1 by forming a first cutting groove 21 and a second cutting groove 22 on the first surface of the cover plate 20, respectively forming a third cutting groove 14 on the silicon substrate 10 and a fourth cutting groove 23 on the second surface corresponding to the position of the second cutting groove 22, forming a fifth cutting groove 24 on the second surface corresponding to the position of the first cutting groove 21, and extending the fifth cutting groove 24 inwardly to communicate with the first cutting groove 21 to form a second cutting edge A2. The area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is removed to expose the bonding pad area. In this way, the first cutting groove 21 and the second cutting groove 22 are formed on the cover plate 20, so that there is a gap between the area corresponding to the bonding pad area and the area corresponding to the display area on the cover plate 20, which is beneficial to avoid edge damage caused by bumping of the cover plate 20, thereby avoiding damage to the circuit structure on the silicon substrate 10, and further beneficial to ensure that the display panel has good display effect and avoids display failure such as black screen. In addition, the first cutting edge A1 and the second cutting edge A2 formed by the method of the embodiments of the present application are regular and flat, which is beneficial to facilitate subsequent processing, improve production and processing efficiency, and further improve the product yield and product competitiveness of the display panel.

[0109] As a realizable way, the third cutting groove 14 includes a first sub-cutting groove 141, and the step S20 of respectively forming the third cutting groove 14 on the surface of the silicon substrate 10 away from the cover plate 20 and forming the fourth cutting groove 23 on the second surface corresponding to the position of the second cutting groove 22 includes:

[0110] The first sub-cutting groove 141 is extended from the surface of the silicon substrate 10 away from the cover plate 20 towards the cover plate 20 and does not penetrate the silicon substrate 10;

[0111] The fourth cutting groove 23 is formed on the second surface corresponding to the position of the second cutting groove 22, and the fourth cutting groove 23 penetrates the cover plate 20 to the inside of the silicon substrate 10 in the direction of the silicon substrate 10 to communicate with the first sub-cutting groove 141.

[0112] In this embodiment, the first sub-cutting groove 141 is formed by cutting the silicon substrate 10, so that the first sub-cutting groove 141 does not penetrate the silicon substrate 10, and the fourth cutting groove 23 is formed by cutting the second surface of the cover plate 20, so that the fourth cutting groove 23 penetrates the area of the cover plate 20 and the silicon substrate 10 corresponding to the position of the first sub-cutting groove 141 at one time, realizes the communication of the fourth cutting groove 23 and the first cutting groove 21, and realizes the penetration of the silicon substrate 10, which is simple in operation and beneficial to improve the processing efficiency.

[0113] In the preferred embodiment, the first sub-dicing groove 141 comprises a first portion 1411 and a second portion 1412, the first sub-dicing groove 141 is formed on the surface of the silicon substrate 10 away from the cover plate 20, comprising:

[0114] The first portion 1411 is formed inwardly on the surface of the silicon substrate 10 away from the cover plate 20, the first portion 1411 comprises a groove bottom and two opposite side faces inclined toward different directions, and the first portion 1411 is configured as a first chamfer of the first cutting edge A1.

[0115] The second portion 1412 is formed inwardly from the groove bottom of the first portion 1411 and does not penetrate the silicon substrate 10, forming the first sub-dicing groove 141.

[0116] In the embodiment, the chamfer is formed first and then the silicon substrate 10 is cut in the process of cutting the silicon substrate 10, which is beneficial to avoid edge collapse damage of the silicon substrate 10 and protect the structural integrity of the silicon substrate 10.

[0117] It can be understood that the distance between the two opposite side faces of the first portion 1411, i.e. the groove width of the first portion 1411, should be greater than the groove width of the second portion 1412; the size of the first portion 1411 in the extension direction is less than the size of the second portion 1412 in the extension direction; wherein the groove width refers to the maximum distance between the two opposite side faces in the direction parallel to the silicon substrate 10. For example, the groove depth of the first portion 1411 can be 110-150 μm, and the groove depth of the second portion 1412 can be 700-745 μm.

[0118] The included angle between the two opposite side faces of the first portion 1411 can be, but is not limited to, any angle.

[0119] In the preferred embodiment, the included angle between the two opposite side faces of the first portion 1411 ranges from 85° to 95°.

[0120] The included angle range of the embodiment is convenient for processing on the one hand, and is beneficial to reliably avoid edge collapse damage of the silicon substrate 10 on the other hand.

[0121] Specifically, the included angle between the two opposite side faces of the first portion 1411 can be, but is not limited to, 85°, 87°, 90°, 92° or 95°, etc.

[0122] In some embodiments, the size of the first portion 1411 in its extension direction is 0.14-0.19 times the thickness of the silicon substrate 10.

[0123] The size of the first portion 1411 in the embodiment is advantageous for convenient processing, can reliably form the first chamfer, and does not cause problems such as edge collapse of the silicon substrate 10 during processing.

[0124] Specifically, the size of the first portion 1411 in the extension direction thereof can be, but is not limited to, 0.14 times, 0.15 times, 0.16 times, 0.18 times, or 0.19 times, etc., of the thickness of the silicon substrate 10.

[0125] For example, the thickness of the silicon substrate 10 can be 775 μm, and the groove depth of the first portion 1411 can be 110 μm-150 μm.

[0126] In some embodiments, the size of the first sub-cutting groove 141 in the extension direction thereof is 0.9 times-0.96 times of the thickness of the silicon substrate 10.

[0127] The size of the first sub-cutting groove 141 in the embodiment is advantageous for ensuring not to penetrate the silicon substrate 10, thereby avoiding the problem of cutting too deep to cause the silicon substrate 10 to crack and the like.

[0128] Specifically, the size of the first sub-cutting groove 141 in the extension direction thereof can be, but is not limited to, 0.9 times, 0.92 times, 0.94 times, or 0.96 times, etc., of the thickness of the silicon substrate 10.

[0129] For example, the thickness of the silicon substrate 10 can be 775 μm, and the groove depth of the first sub-cutting groove 141 can be 700 μm-745 μm.

[0130] As a realizable manner, the third cutting groove 14 includes the first sub-cutting groove 141 and the second sub-cutting groove 142, the third cutting groove 14 is opened on the surface of the silicon substrate 10 away from the cover plate 20, and the fourth cutting groove 23 is opened at the position corresponding to the second cutting groove 22 on the second surface, comprising:

[0131] The first sub-cutting groove 141 is opened on the surface of the silicon substrate 10 away from the cover plate 20, and the first sub-cutting groove 141 extends from the surface of the silicon substrate 10 away from the cover plate 20 towards the cover plate 20 and does not penetrate the silicon substrate 10;

[0132] The fourth cutting groove 23 is opened at the position corresponding to the second cutting groove 22 on the second surface, and the fourth cutting groove 23 extends towards the silicon substrate 10 to communicate with the second cutting groove 22, so that the silicon substrate 10 is exposed to the fourth cutting groove 23;

[0133] The second sub-cutting groove 142 is formed on the silicon substrate 10, and the second sub-cutting groove 142 extends inward from the surface of the silicon substrate 10 exposed to the fourth cutting groove 23 to communicate with the first sub-cutting groove 141.

[0134] In this embodiment, the first sub-cutting groove 141 is first formed on the surface of the silicon substrate 10, then the fourth cutting groove 23 is formed on the cover plate 20, the fourth cutting groove 23 penetrates through the cover plate 20 so that the silicon substrate 10 is exposed, and then the silicon substrate 10 is cut again to form the second sub-cutting groove 142, the second sub-cutting groove 142 communicates with the first sub-cutting groove 141 to form the third cutting groove 14, thereby realizing the cutting of the silicon substrate 10.

[0135] In some embodiments, the fourth cutting groove 23 includes a first region 231 and a second region 232, the fourth cutting groove 23 is formed at a position corresponding to the second cutting groove 22 on the second surface, and includes:

[0136] The first region 231 is formed on the second surface and extends towards the inside, the first region 231 has a groove bottom and two side surfaces which are inclined towards different directions and oppositely arranged, and the first region 231 is configured as a chamfer of the fourth cutting groove 23;

[0137] The second region 232 is formed on the cover plate 20 and extends inwardly from the groove bottom of the first region 231 to communicate with the second cutting groove 22, thereby forming the fourth cutting groove 23;

[0138] In this embodiment, the chamfer is formed first in the process of cutting the cover plate 20, and then the cover plate 20 is cut, which is beneficial to avoid edge damage of the cover plate 20 and protect the structural integrity of the cover plate 20.

[0139] It can be understood that the distance between the two opposite side surfaces of the first region 231, i.e. the groove width of the first region 231, should be greater than the groove width of the second region 232; the size of the first region 231 in the extension direction is less than the size of the second region 232 in the extension direction; wherein the groove width refers to the maximum distance between the two opposite side surfaces in the direction parallel to the silicon substrate 10. For example, the groove depth of the first region 231 can be 110 μm-150 μm, and the groove depth of the second region 232 can be 550 μm-590 μm.

[0140] The included angle between the two opposite side surfaces of the first part 1411 can be, but is not limited to, any angle.

[0141] In some embodiments, the included angle between the two opposite side surfaces of the first region 231 ranges from 85° to 95°.

[0142] The included angle range of this embodiment is convenient for processing on the one hand, and is beneficial to reliably avoid edge damage of the cover plate 20 on the other hand.

[0143] Specifically, the included angle between the two opposite side surfaces of the first region 231 can be, but is not limited to, 85°, 87°, 90°, 92° or 95°, etc.

[0144] In some embodiments, the first region 231 has a dimension in the extension direction of 0.15-0.21 times the thickness of the cover plate 20.

[0145] The dimension of the first region 231 in the embodiment facilitates convenient processing and reliable formation of the first chamfer, and avoids problems such as edge collapse of the cover plate 20 during processing.

[0146] Specifically, the dimension of the first region 231 in the extension direction can be, but is not limited to, 0.15, 0.17, 0.19, 0.20, or 0.21 times the thickness of the cover plate 20, etc.

[0147] For example, the thickness of the cover plate 20 can be 700 pm, and the groove depth of the first region 231 can be 110-150 pm.

[0148] It should be noted that the groove widths of the first cutting groove 21, the second cutting groove 22, the third cutting groove 14, the fourth cutting groove 23, and the fifth cutting groove 24 can be determined according to the actual cutting tool size and processing requirements.

[0149] As an implementable manner, the region between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is removed, including:

[0150] The carrier film 30 is bonded on the cover plate 20, so that the region between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is bonded and fixed with the carrier film 30;

[0151] The carrier film 30 is removed, so that the region between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is removed together with the carrier film 30.

[0152] It should be noted that before cutting the cover plate 20 or the silicon substrate 10, in order to ensure stable movement of the cover plate 20 and the silicon substrate 10, the cover plate 20 or the silicon substrate 10 can be pressed and bonded on the carrier film 30 (UV film).

[0153] In the embodiment, by bonding the carrier film 30 on the cover plate 20, the cover plate 20 can be conveniently fixed, and the region between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 can be removed, so that the binding pad region can be reliably exposed and the binding pad region is prevented from being damaged.

[0154] In some embodiments, during the process of spacing the first cutting groove 21 and the second cutting groove 22 on the first surface of the cover plate 20, the spacing between the first cutting groove 21 and the second cutting groove 22 is 1.0-1.5 mm.

[0155] The interval between the first cutting groove 21 and the second cutting groove 22 here can be the distance between the center line of the first cutting groove 21 and the center line of the second cutting groove 22 in the direction perpendicular to the silicon substrate 10.

[0156] The interval between the first cutting groove 21 and the second cutting groove 22 in the embodiment is advantageous to ensure that the first cutting edge A1 and the second cutting edge A2 formed have a proper distance therebetween, so that the bonding pad area can be reliably exposed and other structures can be conveniently arranged on the silicon substrate 10.

[0157] As an implementable manner, in the process of spacing the first cutting groove 21 and the second cutting groove 22 on the first surface of the cover plate 20, the size of the first cutting groove 21 and the second cutting groove 22 in the extending direction is 0.08-0.14 times the thickness of the cover plate 20.

[0158] In the embodiment, the first cutting groove 21 and the second cutting groove 22 are used to determine the cutting position on the cover plate 20, and to generate a gap between the area corresponding to the display area and the area corresponding to the bonding pad area on the cover plate 20, so as to avoid edge collapse of the cover plate 20 or damage to the silicon substrate 10 during cutting.

[0159] Specifically, the size of the first cutting groove 21 and the second cutting groove 22 in the extending direction can be but is not limited to 0.08, 0.10, 0.12 or 0.14 times the thickness of the cover plate 20, etc.

[0160] For example, if the thickness of the cover plate 20 is 700 μm, the groove depth of the first cutting groove 21 and the second cutting groove 22 can be but is not limited to 60-100 μm.

[0161] In summary, the method for manufacturing a display panel according to the embodiments of this application involves: opening a first cutting groove 21 and a second cutting groove 22 at intervals on the first surface of the cover plate 20; opening a third cutting groove 14 on the silicon substrate 10 and a fourth cutting groove 23 on the second surface corresponding to the second cutting groove 22 to form a first cutting edge A1; opening a fifth cutting groove 24 on the second surface corresponding to the first cutting groove 21, the fifth cutting groove 24 extending inward to communicate with the first cutting groove 21 to form a second cutting edge A2; and removing the area on the cover plate 20 located between the first cutting edge A1 and the second cutting edge A2 to expose the bonding pad area. Thus, by first creating the first cutting groove 21 and the second cutting groove 22 on the cover plate 20, a gap exists between the area corresponding to the bonding pad area and the area corresponding to the display area on the cover plate 20. This helps to prevent the cover plate 20 from chipping or breaking due to impacts, thereby avoiding damage to the circuits and other structures on the silicon substrate 10. This, in turn, helps to ensure that the display panel has a good display effect and avoids problems such as black screen. Furthermore, the first cutting edge A1 and the second cutting edge A2 formed by the method of this embodiment are regular and flush, which facilitates subsequent processing, improves production efficiency, and further improves the product yield and product competitiveness of the display panel.

[0162] Furthermore, when cutting the cover plate 20 and the silicon substrate 10, the first cut is to form a chamfer, which helps to further avoid chipping and breakage of the silicon substrate 10 and the cover plate 20. The silicon substrate 10 is cut twice, and the cover plate 20 is cut in stages to form the first cutting edge A1 and the second cutting edge A2, ensuring that the cutting edges are neat and even. This further improves product quality and facilitates subsequent processing.

[0163] The following specific embodiment illustrates the method for manufacturing the display panel according to an embodiment of this application.

[0164] like Figures 8-17 As shown, the manufacturing process of the display panel includes the following steps:

[0165] like Figure 8 As shown, the cover plate 20 is fixed to the blue film (carrying film 30) to achieve the fixation of the cover plate 20;

[0166] like Figure 9 As shown, after the cover plate 20 is fixed, a first cutting groove 21 and a second cutting groove 22 are cut on one surface of the cover plate 20. The first cutting groove 21 is located in the area of ​​the cover plate 20 corresponding to the bonding pad area (dummy CG), and the second cutting groove 22 is located in the area corresponding to the preset cutting path. The groove depth of the first cutting groove 21 and the second cutting groove 22 is 60μm-100μm, and the groove width of the first cutting groove 21 and the second cutting groove 22 is 80μm-120μm.

[0167] likeFigure 10 As shown in FIG. 6, the cover plate 20 is adhered to the silicon substrate 10 by optical glue;

[0168] As shown in FIG. 7, the silicon substrate 10 with the adhered cover plate 20 is fixed on the carrier film 30, and the fixing is achieved. Figure 11

[0169] As shown in FIG. 8, a V-shaped groove is cut on the silicon substrate 10 at a position corresponding to the second cutting groove 22 by using a short-blade cutting knife, as a first part 1411 of the first sub-cutting groove 141; wherein the groove depth of the V-shaped groove is 130 μm, and the included angle of the opposite two sides of the V-shaped groove is 90 degrees. Figure 12

[0170] As shown in FIG. 9, the V-shaped groove of the silicon substrate 10 is continuously cut by using a long-blade cutting knife to form a second part 1412 of the first sub-cutting groove 141, so that the groove depth of the first sub-cutting groove 141 is 745 μm, and the cutting width can be 60 μm-80 μm. Figure 13 After the cut silicon substrate 10 is turned over, it is fixed on the carrier film 30, so that the cover plate 20 is correspondingly upward.

[0171] As shown in FIG. 10, a V-shaped groove is cut on the other surface of the cover plate 20 at a position corresponding to the second cutting groove 22 as a first region 231 of the fourth cutting groove 23, and the groove depth of the V-shaped groove is 100 μm, and the included angle of the opposite two sides of the V-shaped groove is 90 degrees.

[0172] Figure 14 As shown in FIG. 11, the long-blade cutting knife is used to continue cutting from the groove bottom of the V-shaped groove until the second region 232 of the fourth cutting groove 23 is formed by penetrating the cover plate 20, and the groove depth of the second region 232 is 600 μm, and the groove width can be between 90-110 μm.

[0173] As shown in FIG. 12, the long-blade cutting knife is used to cut the cover plate 20 at a position corresponding to the first cutting groove 21 to form the fifth cutting groove 24, and the groove depth of the fifth cutting groove 24 is 600 μm, and the groove width can be between 90-110 μm, and since there is a distance between the first cutting groove 21 and the second cutting groove 22, a cutting gap can be dummy CGed, and the cover plate 20 can be avoided from being collided and damaged. Figure 15 As shown in FIG. 13, the cut cover plate 20 is turned over and fixed on the carrier film 30, and the dummy CG is adhered to the carrier film 30, so that the dummy CG can be removed.

[0174] Figure 16 As shown in FIG. 14, the long-blade cutting knife is used to cut the cover plate 20 at a position corresponding to the first cutting groove 21 to form the fifth cutting groove 24, and the groove depth of the fifth cutting groove 24 is 600 μm, and the groove width can be between 90-110 μm, and since there is a distance between the first cutting groove 21 and the second cutting groove 22, a cutting gap can be dummy CGed, and the cover plate 20 can be avoided from being collided and damaged.

[0175] As shown in FIG. 15, the cut cover plate 20 is turned over and fixed on the carrier film 30, and the dummy CG is adhered to the carrier film 30, so that the dummy CG can be removed. Figure 17

[0176] ​​​​​In a third aspect, the present application provides a display device comprising the display panel of the first aspect or the display panel prepared according to the preparation method of the second aspect. It can be understood that the display device has all the features and advantages of the display panel described above, which will not be repeated here. In summary, the display device has high quality and yield, and good display effect.

[0177] The display device is a product with image display function. For example, the display device can be any one of a display, a television, a billboard, a digital photo frame, a laser printer with display function, a telephone, a mobile phone, a personal digital assistant (PDA), a digital camera, a camcorder, a viewfinder, a navigator, a vehicle, a large-area wall, a household appliance, an information inquiry device (such as a business inquiry device of an electronic government, a bank, a hospital, a power company, etc.), a monitor, etc. The display device can also be a micro display or a product containing a micro display. The product containing a micro display can be any one of a smart watch, a smart bracelet, a helmet display, a stereoscopic display mirror, and an AR device (such as AR glasses), a VR device (such as VR glasses), etc. For example, the micro display can be a display with a display size ranging from about 0.2 inch to about 2.5 inch, but is not limited thereto. It can be understood that the micro display can also be a display with a smaller display size, for example, a display size less than or equal to 0.2 inch.

[0178] It should be understood that the above-mentioned terms such as "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the indicated panel or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise stated, the meaning of "a plurality of" is two or more.

[0179] The above description is only the preferred embodiment of the present application and the explanation of the technical principles. It should be understood by those skilled in the art that the scope of the protection of the present application is not limited to the technical solutions formed by the specific combinations of the above technical features. It should also cover other technical solutions formed by the combinations of the above technical features or their equivalent features without departing from the concept of the present application. For example, the technical solutions formed by the mutual replacements of the above features and the technical features disclosed in the present application (but not limited to) with similar functions.

Claims

1. A display panel, characterized in that, The device includes a silicon substrate and a cover plate disposed on the silicon substrate. The silicon substrate includes a bonding pad area. The display panel has a first cut edge, and the cover plate has a second cut edge that is recessed relative to the first cut edge to expose the bonding pad area. The cover plate has a first surface and a second surface disposed opposite to each other. The first cutting edge is formed by cutting through the cover plate from the position of the second surface corresponding to the second cutting groove toward the silicon substrate and cutting through the silicon substrate from the position of the surface of the silicon substrate corresponding to the second cutting groove toward the interior of the silicon substrate; The second cutting edge is formed by cutting through the cover plate from the position of the first cutting groove on the second surface toward the silicon substrate. The first cutting groove and the second cutting groove are spaced apart on the first surface. The first cutting groove is located in the area of ​​the first surface corresponding to the bonding pad area, and the position of the second cutting groove corresponds to a preset cutting path.

2. The display panel according to claim 1, characterized in that, The distance between the first cutting edge and the second cutting edge is 1.0mm-1.5mm.

3. The display panel according to claim 1, characterized in that, The first cutting edge forms a first chamfer on the surface of the silicon substrate facing away from the cover plate.

4. The display panel according to claim 1 or 3, characterized in that, The first cutting edge forms a second chamfer on the second surface of the cover plate.

5. A method for manufacturing a display panel, characterized in that, The display panel includes a silicon substrate and a cover plate. The silicon substrate includes bonding pad areas, and the cover plate has a first surface and a second surface disposed opposite to each other. The fabrication method includes the following steps: A first cutting groove and a second cutting groove are formed at intervals on the first surface of the cover plate. The first cutting groove and the second cutting groove extend inward from the first surface and do not penetrate the cover plate. The first cutting groove is located in the area of ​​the cover plate corresponding to the bonding pad area, and the position of the second cutting groove corresponds to a preset cutting path. A third dicing groove is formed on the silicon substrate and a fourth dicing groove is formed on the second surface at a position corresponding to the second dicing groove to form a first dicing edge; wherein, the position of the third dicing groove corresponds to the position of the second dicing groove, and the third dicing groove extends through the silicon substrate from the surface toward the interior; the fourth dicing groove extends through the silicon substrate from the second surface toward the silicon substrate. A fifth cutting groove is formed on the second surface at a position corresponding to the first cutting groove, and the fifth cutting groove extends inward to communicate with the first cutting groove to form a second cutting edge; Remove the area on the cover plate between the first cut edge and the second cut edge to expose the bonding pad area.

6. The preparation method according to claim 5, characterized in that, The third dicing groove includes a first sub-dicing groove, and a third dicing groove is formed on the surface of the silicon substrate facing away from the cover plate, and a fourth dicing groove is formed on the second surface at a position corresponding to the second dicing groove, including: A first sub-cut groove is formed on the surface of the silicon substrate away from the cover plate. The first sub-cut groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate. A fourth cutting groove is formed on the second surface at the position corresponding to the second cutting groove. The fourth cutting groove passes through the cover plate and into the silicon substrate in the direction of the silicon substrate, communicating with the first sub-cutting groove.

7. The preparation method according to claim 6, characterized in that, The first sub-cut groove includes a first part and a second part. The first sub-cut groove is formed on the surface of the silicon substrate facing away from the cover plate, including: The first portion extends inwardly on the surface of the silicon substrate away from the cover plate, the first portion including a groove bottom and having two opposite sides inclined in different directions, the first portion being configured as a first chamfer of the first cut edge; The second portion is formed within the silicon substrate, the second portion extending inward from the bottom of the groove of the first portion without penetrating the silicon substrate, forming the first sub-cut groove.

8. The preparation method according to claim 7, characterized in that, The included angle between the two opposite sides of the first part is 85 degrees. o -95 o .

9. The preparation method according to claim 7, characterized in that, The dimension of the first portion in its extension direction is 0.14 to 0.19 times the thickness of the silicon substrate.

10. The preparation method according to claim 7, characterized in that, The dimension of the first sub-cut groove in its extension direction is 0.9 to 0.96 times the thickness of the silicon substrate.

11. The preparation method according to claim 5, characterized in that, The third dicing groove includes a first sub-dicing groove and a second sub-dicing groove. A third dicing groove is formed on the surface of the silicon substrate facing away from the cover plate, and a fourth dicing groove is formed on the second surface at a position corresponding to the second dicing groove. The third dicing groove includes: A first sub-cut groove is formed on the surface of the silicon substrate away from the cover plate. The first sub-cut groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate. A fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove. The fourth cutting groove extends toward the silicon substrate and communicates with the second cutting groove, so that the silicon substrate is exposed in the fourth cutting groove. A second sub-cut groove is formed on the silicon substrate, the second sub-cut groove extending inward from the surface of the silicon substrate exposed from the fourth cut groove to communicate with the first sub-cut groove.

12. The preparation method according to claim 11, characterized in that, The fourth cutting groove includes a first region and a second region. A fourth cutting groove is formed on the second surface at a position corresponding to the second cutting groove, including: The first region is formed by extending inward from the second surface, the first region having a groove bottom and two sides that are inclined in different directions and arranged opposite to each other, the first region being configured as the chamfer of the fourth cutting groove; A second region is formed on the cover plate, the second region extending inward from the bottom of the groove in the first region to communicate with the second cutting groove, forming the fourth cutting groove.

13. The preparation method according to claim 12, characterized in that, The included angle between the two opposite sides of the first region is 85 degrees. o -95 o .

14. The preparation method according to claim 12, characterized in that, The dimension of the first region in its extending direction is 0.15 to 0.21 times the thickness of the cover plate.

15. The preparation method according to claim 5, characterized in that, Removing the area on the cover plate between the first cut edge and the second cut edge includes: A carrier film is adhered to the cover plate so that the area on the cover plate between the first cut edge and the second cut edge is adhered and fixed to the carrier film. Remove the carrier film so that the area on the cover plate between the first cut edge and the second cut edge is removed along with the carrier film.

16. The preparation method according to any one of claims 5-15, wherein during the process of opening the first cutting groove and the second cutting groove at intervals on the first surface of the cover plate, the distance between the first cutting groove and the second cutting groove is 1.0 mm-1.5 mm.

17. The preparation method according to any one of claims 5-15, wherein during the process of opening a first cutting groove and a second cutting groove at intervals on the first surface of the cover plate, the dimensions of the first cutting groove and the second cutting groove in the extension direction are 0.08 times to 0.14 times the thickness of the cover plate.

18. A display device, characterized in that, The display panel includes the display panel according to any one of claims 1-4 or the display panel prepared by the preparation method according to any one of claims 5-17.

Images