Thin film solar cell and electric device

CN119896067APending Publication Date: 2025-04-25CONTEMPORARY AMPEREX TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202280099794.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2022-11-30
Publication Date
2025-04-25

AI Technical Summary

Technical Problem

The output power of existing thin-film solar cells is low, mainly due to the instability of the functional layer caused by the contact between the connection structure and the functional layer, resulting in photocurrent loss.

Method used

By introducing an isolation structure into a thin-film solar cell, the connection structure is isolated from the functional layer in the battery unit, preventing contact and reaction, and improving the stability of the functional layer, thereby enhancing the photocurrent and output power.

Benefits of technology

It effectively reduces the output power loss of the battery unit and improves the output power and stability of the thin film solar cell.

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Abstract

The invention provides a thin film solar cell and an electric device. The thin film solar cell comprises a plurality of cell units and an interconnection structure. The battery unit comprises a first electrode layer, a second electrode layer and a multi-layer functional layer located between the first electrode layer and the second electrode layer. The interconnection structure comprises a first isolation structure, a connection structure and a second isolation structure; the connecting structure is used for connecting the first electrode layer of the first battery unit and the second electrode layer of the second battery unit which are adjacent in the plurality of battery units; the first isolation structure is used for isolating the first electrode layer of the first battery unit from the first electrode layer of the second battery unit, and isolating at least one functional layer of the first battery unit from the connecting structure; and the second isolation structure is used for isolating the second electrode layer of the first battery unit from the second electrode layer of the second battery unit, and isolating at least one functional layer of the second battery unit from the connecting structure. According to the technical scheme, the output power can be improved.
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Description

Thin-film solar cells and electrical devices Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a thin-film solar cell and an electrical device. Background Art

[0002] Thin-film solar cells are photovoltaic devices that use sunlight to generate electricity directly. They offer advantages such as low mass, thinness, flexibility, and low raw material costs. In recent years, thin-film solar cells have developed rapidly, accounting for an increasing share of the photovoltaic power generation sector.

[0003] Thin-film solar cells consist of multiple cells, which are electrically connected via an interconnection structure. The configuration of this interconnection structure affects the output power of the cells. Therefore, finding a way to improve the output power of thin-film solar cells is a pressing technical challenge.

[0004] Summary of the Invention

[0005] The present application is made in view of the above-mentioned problems, and its purpose is to provide a thin-film solar cell to improve the output power of the thin-film solar cell.

[0006] In order to achieve the above objectives, the present application provides a thin film solar cell and an electrical device.

[0007] The first aspect of the present application provides a thin-film solar cell, comprising: a plurality of battery cells arranged along a first direction, the battery cells comprising a first electrode layer, a second electrode layer and a multi-layer functional layer located between the first electrode layer and the second electrode layer arranged along a second direction; an interconnection structure, the interconnection structure comprising a first isolation structure, a connection structure and a second isolation structure; the connection structure is used to connect the first electrode layer of the first battery cell and the second electrode layer of the second battery cell adjacent to each other in the plurality of battery cells; the first isolation structure is used to isolate the first electrode layer of the first battery cell and the first electrode layer of the second battery cell, and to isolate at least one layer of the functional layer of the first battery cell and the connection structure; the second isolation structure is used to isolate the second electrode layer of the first battery cell and the second electrode layer of the second battery cell, and to isolate at least one layer of the functional layer of the second battery cell and the connection structure.

[0008] In an embodiment of the present application, a thin-film solar cell includes a plurality of battery cells arranged along a first direction and an interconnection structure. The battery cell includes a first electrode layer, a second electrode layer, and a multi-layer functional layer located between the first electrode layer and the second electrode layer, arranged along a second direction. In this way, the battery cell can output power through the first electrode layer and the second electrode layer, and transfer charge and absorb light through the multi-layer functional layer. The interconnection structure includes a first isolation structure, a connection structure, and a second isolation structure. The connection structure is used to connect the first electrode layer of the first battery cell and the second electrode layer of the second battery cell adjacent to each other in the plurality of battery cells, thereby achieving electrical connection between adjacent battery cells. The first isolation structure is used to isolate the first electrode layer of the first battery cell and the first electrode layer of the second battery cell, and to isolate at least one functional layer of the first battery cell and the connection structure. In this way, isolation or insulation between the first electrode layers of adjacent battery cells can be achieved, and the stability of the functional layer caused by the contact between the connection structure and at least one functional layer can be prevented, thereby avoiding the loss of photocurrent or output power. The second isolation structure is used to isolate the second electrode layer of the first battery cell from the second electrode layer of the second battery cell, and to isolate at least one functional layer of the second battery cell from the connection structure. In this way, insulation can be achieved between the second electrode layers of adjacent battery cells, and the stability of the functional layer caused by contact between the connection structure and at least one functional layer can be prevented, thereby avoiding loss of photocurrent or output power. Therefore, the technical solution of the present application can help reduce or avoid loss of output power of the battery cells and help improve the output power of thin-film solar cells.

[0009] In one possible implementation, the functional layer includes a light absorbing layer, and the first isolation structure is used to isolate the light absorbing layer from the connection structure. This prevents a reaction between the connection structure and the light absorbing layer, which could lead to a reduction in the effective material in the light absorbing layer. This improves the stability of the light absorbing layer and the cell, and thus increases the output power of the thin-film solar cell.

[0010] In one possible implementation, the battery cell includes a first electrode layer, a first charge transport layer, a first light absorption layer, a second charge transport layer, and a second electrode layer sequentially disposed on a substrate, and the first isolation structure is used to isolate the connection structure from the first charge transport layer, the first light absorption layer, and the second charge transport layer. Thus, the first isolation structure can isolate the connection structure from contact with the first charge transport layer, the first light absorption layer, and the second charge transport layer in the battery cell, thereby preventing reaction between the connection structure and the first light absorption layer, thereby facilitating improved output power of the thin-film solar cell.

[0011] In one possible implementation, the battery cell further includes a third electrode layer, a third charge transport layer, a second light absorption layer, and a fourth charge transport layer located between the second charge transport layer and the second electrode layer and arranged in sequence. The first isolation structure is used to isolate the connection structure from the third electrode layer, the third charge transport layer, the second light absorption layer, and the fourth charge transport layer. In this way, the first isolation structure can isolate the contact between the connection structure and the third electrode layer, the third charge transport layer, the second light absorption layer, and the fourth charge transport layer in the battery cell. On the one hand, the isolation between the connection structure and the third electrode layer avoids the loss of photocurrent caused by the contact between the connection structure and the third electrode layer; on the other hand, the isolation between the connection structure and the second light absorption layer avoids the reaction between the connection structure and the second light absorption layer, which is beneficial to improving the stability of the second light absorption layer.

[0012] In one possible implementation, the first isolation structure is an insulating structure extending from the second electrode layer to the substrate along the second direction, thereby ensuring the isolation effect between the connection structure and the light absorbing layer or the third electrode layer and avoiding the loss of photocurrent.

[0013] In one possible implementation, the insulating structure includes a first insulating wall extending along the second direction from the first surface of the second electrode layer to the first surface of the substrate. The first surface of the second electrode layer is the surface of the second electrode layer away from the first electrode layer, and the first surface of the substrate is the surface of the substrate close to the first electrode layer. This facilitates the fabrication of the insulating structure, which can be fabricated through etching and filling processes after all film layers in the battery cell are fabricated, saving fabrication steps and reducing production costs.

[0014] In one possible implementation, the second electrode layer protrudes from the first isolation structure along the second direction at a position corresponding to the first isolation structure, so that the connection structure is electrically connected to the second electrode layer. In this way, the electrical connection between the connection structure and the second electrode layer can be ensured.

[0015] In a possible implementation, along the first direction, the distance between the connecting structure and the first isolation structure is greater than 0. This can reduce the difficulty of preparing the connecting structure and the first isolation structure and facilitate their preparation.

[0016] In a possible implementation, along the first direction, the size of the first isolation structure is 10 μm to 80 μm. In this way, both the isolation effect of the first isolation structure and the volume of the thin-film solar cell can be taken into consideration.

[0017] In one possible implementation, the material of the first insulating wall includes at least one of epoxy resin, melamine formaldehyde resin, polycarbonate, polymethyl methacrylate, polyethylene, polytetrafluoroethylene, phenol plastic, silicon boron, metal oxide, and an inorganic solid with an ionic structure. This facilitates flexible selection of the material of the first insulating wall based on actual conditions.

[0018] In one possible implementation, the first isolation structure includes a second insulating wall and a first insulating layer. The second insulating wall extends along the second direction from the second surface of the first electrode layer to the first surface of the first electrode layer. The first insulating layer is attached to a side of the connection structure that is close to the second insulating wall. The first surface of the first electrode layer is a surface of the first electrode layer that is away from the substrate, and the second surface of the first electrode layer is a surface of the first electrode layer that is close to the substrate. In this way, the insulation effect of the first isolation structure can be ensured.

[0019] In a possible implementation, the second isolation structure is a groove extending from the second electrode layer to the first electrode layer along the second direction, thereby achieving isolation between adjacent battery cells.

[0020] In one possible implementation, the second isolation structure extends along the second direction from the first surface of the second electrode layer to the first surface of the first electrode layer. The first surface of the second electrode layer is the surface of the second electrode layer away from the first electrode layer, and the first surface of the first electrode layer is the surface of the first electrode layer away from the substrate. This facilitates the preparation of the second isolation structure.

[0021] In a possible implementation, along the first direction, the size of the second isolation structure is 30 μm to 100 μm. In this way, both the isolation effect of the second isolation structure and the volume of the thin-film solar cell can be taken into consideration.

[0022] In one possible implementation, the distance between the first isolation structure and the second isolation structure along the first direction is 200 μm to 300 μm. This can reduce the difficulty of fabricating the first isolation structure and the second isolation structure. For example, when fabricating the first isolation structure and the second isolation structure by scribing, the connection between the first isolation structure and the second isolation structure caused by crossing or skewed scribing lines can be avoided.

[0023] In a possible implementation, along the first direction, the size of the connection structure is 30 μm to 100 μm. In this way, both the conductive performance of the connection structure and the volume of the thin-film solar cell can be taken into consideration.

[0024] In a possible implementation, along the first direction, the size of the battery cell is 6 mm to 10 mm, which facilitates the division and preparation of the battery cells.

[0025] In one possible implementation, the band gap of the first light absorbing layer is larger than the band gap of the second light absorbing layer, which is beneficial to improving the absorption efficiency of the light absorbing layer and thus improving the photoelectric conversion efficiency.

[0026] In one possible implementation, both the first light absorbing layer and the second light absorbing layer are perovskite layers, which facilitates the preparation of the first light absorbing layer and the second light absorbing layer and helps reduce the difficulty of preparation.

[0027] In a possible implementation, the first light absorbing layer is a copper indium gallium selenide layer, and the second light absorbing layer is a perovskite layer, which is beneficial for improving the stability of the thin-film solar cell.

[0028] In one possible implementation, the thickness of the first charge transport layer is 10nm to 30nm, the thickness of the first light absorption layer is 100nm to 400nm, the thickness of the second charge transport layer is 20nm to 60nm, the thickness of the third electrode layer is 1nm to 3nm, the thickness of the third charge transport layer is 10nm to 30nm, the thickness of the second light absorption layer is 600nm to 800nm, the thickness of the fourth charge transport layer is 30nm to 50nm, and the thickness of the second electrode layer is 100nm to 200nm. This facilitates flexible selection of the thickness of each layer according to actual needs.

[0029] A second aspect of the present application provides an electrical device, comprising the thin-film solar cell according to the first aspect and any possible implementation thereof, wherein the thin-film solar cell is used to supply power to the electrical device.

[0030] In an embodiment of the present application, a thin-film solar cell includes a plurality of battery cells arranged along a first direction and an interconnection structure. The battery cell includes a first electrode layer, a second electrode layer, and a multi-layer functional layer located between the first electrode layer and the second electrode layer, arranged along a second direction. In this way, the battery cell can output power through the first electrode layer and the second electrode layer, and transfer charge and absorb light through the multi-layer functional layer. The interconnection structure includes a first isolation structure, a connection structure, and a second isolation structure. The connection structure is used to connect the first electrode layer of the first battery cell and the second electrode layer of the second battery cell adjacent to each other in the plurality of battery cells, thereby achieving electrical connection between adjacent battery cells. The first isolation structure is used to isolate the first electrode layer of the first battery cell and the first electrode layer of the second battery cell, and to isolate at least one functional layer of the first battery cell and the connection structure. In this way, isolation or insulation between the first electrode layers of adjacent battery cells can be achieved, and the stability of the functional layer caused by the contact between the connection structure and at least one functional layer can be prevented, thereby avoiding the loss of photocurrent or output power. The second isolation structure is used to isolate the second electrode layer of the first battery cell from the second electrode layer of the second battery cell, and to isolate at least one functional layer of the second battery cell from the connection structure. In this way, insulation can be achieved between the second electrode layers of adjacent battery cells, and the stability of the functional layer caused by contact between the connection structure and at least one functional layer can be prevented, thereby avoiding loss of photocurrent or output power. Therefore, the technical solution of the present application can help reduce or avoid loss of output power of the battery cells and help improve the output power of thin-film solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] FIG1 is a schematic diagram of a thin-film solar cell according to an embodiment of the present application;

[0032] FIG2 is a schematic diagram of a thin-film solar cell according to an embodiment of the present application;

[0033] FIG3 is a cross-sectional schematic diagram of a thin-film solar cell according to an embodiment of the present application;

[0034] FIG4 is a schematic cross-sectional view of a battery unit of the thin-film solar cell of FIG3 ;

[0035] FIG5 is a side view of a battery unit of the thin-film solar cell in FIG3 ;

[0036] FIG6 is a schematic diagram of a thin-film solar cell according to an embodiment of the present application;

[0037] FIG7 is a schematic diagram of a thin-film solar cell according to an embodiment of the present application;

[0038] FIG8 is a schematic diagram of an electrical device according to an embodiment of the present application;

[0039] FIG9 is a schematic diagram of a method for preparing a thin-film solar cell according to an embodiment of the present application. DETAILED DESCRIPTION

[0040] Below, with appropriate reference to the accompanying drawings, the embodiments of the thin-film solar cell, electrical device, and method for manufacturing a thin-film solar cell of the present application are described in detail. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially identical structures may be omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0041] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0042] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0043] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0044] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0045] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0046] Unless otherwise specified, the term "or" is used in this application to be inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0047] Thin-film solar cells are photovoltaic devices that generate electricity directly from sunlight. In recent years, with the gradual advancement of technology, the requirements for thin-film solar cells have become increasingly stringent, with output power being a key performance characteristic. Thin-film solar cells consist of multiple cells and an interconnect structure, which electrically connects the cells. The interconnect structure includes a first isolation structure that isolates the first electrode layers of adjacent cells, a connection structure that connects adjacent cells, and a second isolation structure that isolates the second electrode layers of adjacent cells.

[0048] The applicant has found through research that the connection structure contacts the functional layer of the battery cell, and the connection structure and the functional layer react, resulting in instability of the functional layer and loss of photocurrent of the battery cell, which is not conducive to improving the output power of the thin-film solar cell.

[0049] In view of this, the present application provides a thin-film solar cell, which avoids or reduces the loss of photocurrent by isolating the connection structure and at least one functional layer in the battery cell, thereby improving the output power of the thin-film solar cell.

[0050] Figure 1 is a schematic diagram of a thin film solar cell according to an embodiment of the present application. As shown in Figure 1 , a thin film solar cell 1 includes a plurality of battery cells 2 and an interconnection structure 3 arranged along a first direction.

[0051] The first direction is the arrangement direction of the plurality of battery cells 2 , for example, the x direction in FIG. 1 .

[0052] The battery cell 2 includes a first electrode layer 51, a second electrode layer 52 and a multi-layer functional layer 50 arranged along a second direction. The second direction is perpendicular to the first direction, for example, the z direction in FIG. 1 .

[0053] The first electrode layer 51 and the second electrode layer 52 are used to output power of the battery cell 2 .

[0054] Optionally, the first electrode layer 51 is a transparent conductive oxide layer. For example, the first electrode layer 51 is indium tin oxide (ITO), and the thickness of the first electrode layer 51 is 200 nm to 300 nm. For another example, the first electrode layer 51 is fluorine-doped tin oxide, and the thickness of the first electrode layer 51 is 500 nm to 600 nm.

[0055] Optionally, the second electrode layer 52 is a metal electrode layer. For example, the material of the second electrode layer 52 is Cu.

[0056] Functional layer 50 enables solar cell 2 to generate electricity using sunlight. Functional layer 50 may include a charge transport layer for transporting carriers, such as holes or electrons, or a light absorption layer that generates electron-hole pairs when exposed to sunlight.

[0057] The interconnection structure 3 includes a first isolation structure 31 , a connection structure 32 and a second isolation structure 33 .

[0058] The connection structure 32 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 adjacent to each other in the plurality of battery cells 2. In other words, the plurality of battery cells 2 include adjacent first and second battery cells 21, 22, and the connection structure 32 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22, thereby enabling the first battery cell 21 and the second battery cell 22 to be connected in series.

[0059] The first isolation structure 31 is used to isolate the first electrode layer 51 of the first battery cell 21 from the first electrode layer 51 of the second battery cell 22, and to isolate at least one functional layer 50 of the first battery cell 21 from the connection structure 32. For example, if the battery cell 2 includes three functional layers 50, the first isolation structure 31 can isolate one functional layer 50, two functional layers 50, or three functional layers 50. For another example, the first isolation structure 31 can isolate two adjacent functional layers 50, or two functional layers 50 spaced apart.

[0060] By setting up the first isolation structure 31, direct contact or electrical connection between the first electrode layers 51 of adjacent battery cells 2 can be avoided, and contact between the connection structure 32 and at least one functional layer 50 of the first battery cell 21 can also be avoided, thereby avoiding a decrease in the stability of the functional layer 50 caused by the reaction between the connection structure 32 and at least one functional layer 50, which is beneficial to improving the stability of the thin-film solar cell 1.

[0061] The second isolation structure 33 is used to isolate the second electrode layer 52 of the first battery cell 21 from the second electrode layer 52 of the second battery cell 22, and to isolate the at least one functional layer 50 of the second battery cell 22 from the connection structure 32. In this way, direct contact or electrical connection between the second electrode layers 52 of adjacent battery cells 2 can be avoided, and contact between the connection structure 32 and the at least one functional layer 50 of the second battery cell 22 can also be avoided, which is beneficial to improving the stability of the functional layer 50 and the stability of the thin-film solar cell 1.

[0062] In an embodiment of the present application, a thin-film solar cell 1 includes a plurality of battery cells 2 arranged along a first direction and an interconnection structure 3. The battery cells 2 include a first electrode layer 51 and a second electrode layer 52 arranged along a second direction, and a multilayer functional layer 50 located between the first electrode layer 51 and the second electrode layer 52. In this way, the second battery cell 2 can output power through the first electrode layer 51 and the second electrode layer 52, and achieve charge transmission and light absorption through the multilayer functional layer 50. The interconnection structure 3 includes a first isolation structure 31, a connection structure 32, and a second isolation structure 33. The connection structure 32 is used to connect the first electrode layer 51 of the first battery cell 21 and the second electrode layer 52 of the second battery cell 22 adjacent to each other in the plurality of battery cells 2, thereby achieving electrical connection between adjacent battery cells 2. The first isolation structure 31 is used to isolate the first electrode layer 51 of the first cell 21 from the first electrode layer 51 of the second cell 22, and to isolate the at least one functional layer 50 of the first cell 21 from the connection structure 32. This allows for isolation or insulation between the first electrode layers 51 of adjacent second cells 2, and prevents the stability of the functional layer 50 from being reduced due to contact between the connection structure 32 and the at least one functional layer 50, thereby avoiding loss of photocurrent or output power. The second isolation structure 33 is used to isolate the second electrode layer 52 of the first cell 21 from the second electrode layer 52 of the second cell 22, and to isolate the at least one functional layer 50 of the second cell 22 from the connection structure 32. This allows for isolation or insulation between the second electrode layers 52 of adjacent cells 2, and prevents the stability of the functional layer 50 from being reduced due to contact between the connection structure 32 and the at least one functional layer 50, thereby avoiding loss of photocurrent or output power. Therefore, the technical solution of the present application is beneficial for reducing or avoiding output power loss of the cell 2 and improving the output power of the thin-film solar cell 1.

[0063] In some embodiments, the functional layer 50 includes a light absorbing layer, and the first isolation structure 31 is used to isolate the light absorbing layer from the connection structure 32 .

[0064] The light absorbing layer, also known as the photosensitive layer, generates electron-hole pairs when exposed to sunlight. Materials for the light absorbing layer can include perovskite, copper indium gallium selenide, cadmium telluride, and the like.

[0065] In this embodiment, the reduction of effective substances in the light absorbing layer caused by the reaction between the connecting structure 32 and the light absorbing layer can be avoided, thereby facilitating the improvement of the stability of the light absorbing layer and the battery unit 2 and the improvement of the output power of the thin-film solar cell 1 .

[0066] Figure 2 is a schematic diagram of a thin-film solar cell according to one embodiment of the present application. In some embodiments, as shown in Figure 2 , a cell 2 includes a first electrode layer 51, a first charge transport layer 53, a first light absorbing layer 54, a second charge transport layer 55, and a second electrode layer 52 sequentially disposed on a substrate 20. A first isolation structure 31 is used to isolate the connection structure 32 from the first charge transport layer 53, the first light absorbing layer 54, and the second charge transport layer 55.

[0067] "Disposed sequentially" means disposed in sequence, and does not necessarily mean adjacent to each other. For example, "the second charge transport layer 55 and the second electrode layer 52 are disposed sequentially" means that the second charge transport layer 55 is closer to the substrate than the second electrode layer 52. The second charge transport layer 55 and the second electrode layer 52 may be in direct contact with each other, or another functional layer may be disposed between the second charge transport layer 55 and the second electrode layer 52.

[0068] The battery cell 2 includes a first electrode layer 51, a first charge transport layer 53, a first light absorption layer 54, a second charge transport layer 55 and a second electrode layer 52 arranged in sequence on the substrate 20. In other words, in the battery cell 2, the substrate 20, the first electrode layer 51, the first charge transport layer 53, the first light absorption layer 54, the second charge transport layer 55 and the second electrode layer 52 are arranged from bottom to top.

[0069] The first charge transport layer 53 and the second charge transport layer 54 are used to transport carriers. Optionally, the first charge transport layer 53 is a hole transport layer, and the second charge transport layer 55 is an electron transport layer. Optionally, the first charge transport layer 53 is an electron transport layer, and the second charge transport layer 55 is a hole transport layer.

[0070] The first isolation structure 31 is used to isolate the connection structure 32 from the battery unit 2

[0071] Optionally, the first light absorbing layer 54 is a perovskite layer. By providing an isolation structure 31, the perovskite layer can be isolated from contact with the connection structure 32. For example, if the connection structure 32 is a conductive material containing silver ions, the silver ions will react with the iodine ions in the perovskite, accelerating the decomposition of the perovskite and causing a decrease in the power of the battery cell 2. By isolating the first light absorbing layer 54 of the perovskite from the connection structure 32 using the isolation structure 31, the decomposition of the perovskite can be avoided, which is beneficial for maintaining or improving the output power of the thin-film solar cell.

[0072] In this embodiment, the first isolation structure 31 can isolate the connection structure 32 from contact with the first charge transport layer 53, the first light absorption layer 54 and the second charge transport layer 55 in the second battery unit 2, thereby avoiding reaction between the connection structure 32 and the first light absorption layer 54, which is beneficial to improving the output power of the thin-film solar cell 1.

[0073] Alternatively, the first isolation structure 31 may also only isolate the contact between the connection structure 32 and the first light absorption layer 54 in the battery cell 2, without isolating the contact between the connection structure 32 and the first charge transport layer 53 and the second charge transport layer 55 in the battery cell 2. Alternatively, the first isolation structure may only isolate the contact between the connection structure 32 and the first light absorption layer 54 and the first charge transport layer 53 in the battery cell 2, without isolating the contact between the connection structure 32 and the second charge transport layer 55 in the battery cell 2. Alternatively, the first isolation structure may only isolate the contact between the connection structure 32 and the first light absorption layer 54 and the second charge transport layer 55 in the battery cell 2, without isolating the contact between the connection structure 32 and the first charge transport layer 53 in the battery cell 2.

[0074] Figure 3 is a schematic cross-sectional view of a thin-film solar cell according to an embodiment of the present application, Figure 4 is a schematic cross-sectional view of a cell unit of the thin-film solar cell in Figure 3, and Figure 5 is a side view of a cell unit of the thin-film solar cell in Figure 3. In some embodiments, as shown in combination with Figures 3 to 5, the second cell unit 2 further includes a third electrode layer 56, a third charge transport layer 57, a second light absorption layer 58, and a fourth charge transport layer 59, which are sequentially disposed between the second charge transport layer 55 and the second electrode layer 52. The first isolation structure 31 is used to isolate the connection structure 32 from the third electrode layer 56, the third charge transport layer 57, the second light absorption layer 58, and the fourth charge transport layer 59.

[0075] The battery cell 2 shown in FIG3 can be referred to as a stacked-structure battery cell. The battery cell 2 includes at least two subcells, one of which includes an electrode layer-charge transport layer-light absorption layer-charge transport layer-electrode layer structure. Alternatively, the battery cell 2 may include more than two subcells, for example, three, four, or more subcells.

[0076] The battery cell 2 can have either a regular structure or a trans structure. For example, when the battery cell 2 has a regular structure, the first charge transport layer 53 is a hole transport layer, the second charge transport layer 55 is an electron transport layer, the third charge transport layer 57 is a hole transport layer, and the fourth charge transport layer 59 is an electron transport layer. When the battery cell 2 has a trans structure, the first charge transport layer 53 is an electron transport layer, the second charge transport layer 55 is a hole transport layer, the third charge transport layer 57 is an electron transport layer, and the fourth charge transport layer 59 is a hole transport layer.

[0077] The material of the electron transport layer can be zinc oxide, titanium oxide, tin oxide, carbon 60 (i.e., C60) and fullerene derivatives (i.e., PCBM), etc., and the material of the hole transport layer can be nickel oxide, poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] (Poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine], PTAA), 3-hexylthiophene polymer (abbreviated as P3HT), 2,2',7,7'-tetrakis [N,N-di (4-methoxyphenyl) amino] -9,9'-spirobifluorene (abbreviated as Spiro-OMeTAD), etc.

[0078] The first isolation structure 31 is used to isolate the connection structure 32 and the multi-layer functional layer in the battery cell 2, and the multi-layer functional layer includes a first charge transport layer 53, a first light absorption layer 54 and a second charge transport layer 55, a third electrode layer 56, a third charge transport layer 57, a second light absorption layer 58 and a fourth charge transport layer 59.

[0079] In this embodiment, the first isolation structure 31 can isolate the connection structure 32 from contact with the third electrode layer 56, the third charge transport layer 57, the second light absorption layer 58, and the fourth charge transport layer 59 in the second battery cell 2. On the one hand, the isolation between the connection structure 32 and the third electrode layer 56 prevents photocurrent loss caused by contact between the connection structure 32 and the third electrode layer 56. On the other hand, the isolation between the connection structure 32 and the second light absorption layer 58 prevents reaction between the connection structure 32 and the second light absorption layer 58, which helps to improve the stability of the second light absorption layer 58.

[0080] In some embodiments, the first isolation structure 31 is an insulating structure extending from the second electrode layer 52 to the substrate 20 along the second direction.

[0081] The first isolation structure 31 can be an insulating structure extending from the first or second surface of the second electrode layer 52 to the first or second surface of the substrate 20. In other words, the length of the first isolation structure 31 in the second direction varies, allowing an appropriate length to be selected based on actual needs. The first surface of the second electrode layer 52 is the surface of the second electrode layer 52 away from the first electrode layer 51, while the second surface of the second electrode layer 52 is the surface of the second electrode layer 52 close to the first electrode layer 51. The first surface of the substrate 20 is the surface of the substrate 20 close to the first electrode layer 51, while the second surface of the substrate 20 is the surface of the substrate 20 away from the first electrode layer 51.

[0082] Optionally, an inorganic or organic insulating material is provided in the insulating structure.

[0083] In this embodiment, the first isolation structure 31 is an insulating structure extending from the second electrode layer 52 to the substrate 20 along the second direction. This ensures the isolation effect between the connection structure 32 and the light absorption layer and / or the third electrode layer 56, avoids the loss of photocurrent, and improves the stability of the battery unit 2, thereby facilitating the improvement of the power of the thin-film solar cell 1.

[0084] In some embodiments, the insulating structure includes a first insulating wall 311 extending along the second direction from the first surface of the second electrode layer 52 to the first surface of the substrate 20. The first surface of the second electrode layer 52 is the surface of the second electrode layer 52 away from the first electrode layer 51, and the first surface of the substrate 20 is the surface of the substrate close to the first electrode layer 51. This facilitates the fabrication of the insulating structure, and the insulating structure can be fabricated through etching and filling processes after all film layers in the second battery cell 2 are fabricated, which helps save fabrication steps and reduces production costs.

[0085] In some embodiments, the second electrode layer 52 protrudes from the first isolation structure 31 along the second direction at a position corresponding to the first isolation structure 31, so that the connection structure 32 is electrically connected to the second electrode layer 52. In this way, the electrical connection between the connection structure 32 and the second electrode layer 52 can be ensured.

[0086] Optionally, the connection structure 32 protrudes from the first isolation structure along the second direction at a position corresponding to the first isolation structure 31, so that the connection structure 32 is electrically connected to the second electrode layer 52. The connection structure 32 can be prepared by etching the corresponding film layer in the battery cell 2 and filling or spraying the etched groove with a metal material or other conductive material.

[0087] Optionally, the first insulating wall 311 extends along the second direction from the second surface of the second electrode layer 52 to the first surface of the substrate 20 .

[0088] In some embodiments, along the first direction, a distance d1 between the connection structure 32 and the first isolation structure 31 is greater than 0.

[0089] The distance d1 between the connection structure 32 and the first isolation structure 31 or the first insulating wall 311 is the minimum vertical distance.

[0090] In this embodiment, the film layer of the battery cell 2 can be etched by laser or mechanical scribing to form corresponding grooves, and then the corresponding grooves are filled with insulating material and conductive material to form the first insulating wall 311 and the connecting structure 32. By setting the distance between the connecting structure 32 and the first isolation structure 31 in the first direction to be greater than 0, the difficulty of scribing can be reduced, thereby reducing the difficulty of preparing the connecting structure 32 and the first isolation structure 31, and facilitating the preparation of the connecting structure 32 and the first isolation structure 31.

[0091] In some embodiments, along the first direction, a dimension k1 of the first isolation structure 31 is 10 μm to 80 μm.

[0092] When the dimension k1 of the first isolation structure 31 is less than 10 μm, the isolation effect of the first isolation structure 31 is insufficient and the fabrication is complex. When the dimension k1 of the first isolation structure 31 is greater than 80 μm, the isolation effect is good, but the first isolation structure 31 occupies a large space, resulting in a larger volume of the thin-film solar cell 1 and hindering the improvement of energy density. By setting the dimension k1 of the first isolation structure 31 in the first direction to 10 μm to 80 μm, the isolation effect of the first isolation structure 31 and the volume of the thin-film solar cell 1 can be balanced.

[0093] In some embodiments, the material of the first insulating wall 311 includes a solid insulating material, an organic insulating material, or an inorganic insulating material. For example, the organic insulating material may include one or more of epoxy resin, melamine formaldehyde resin, polycarbonate polymethyl methacrylate, polyethylene, polytetrafluoroethylene, phenolic plastic, etc. Inorganic insulating materials may include silicon boron and various metal oxides. Inorganic insulating materials may also include inorganic solids with ionic structures or inorganic solids with a predominantly ionic structure. This facilitates flexible selection of the material for the first insulating wall based on actual conditions.

[0094] FIG6 is a schematic diagram of a thin film solar cell according to an embodiment of the present application. In some embodiments, as shown in FIG6 , the first isolation structure 31 includes a second insulating wall 312 and a first insulating layer 313 .

[0095] The second insulating wall 312 extends along the second direction from the second surface of the first electrode layer 51 to the first surface of the first electrode layer 51. The first surface of the first electrode layer 51 is the surface of the first electrode layer 51 away from the substrate, and the second surface of the first electrode layer 51 is the surface of the first electrode layer 51 close to the substrate. In this way, the second insulating wall 312 can achieve insulation of the first electrode layer 51 between adjacent battery cells 2.

[0096] The first insulating layer 313 is attached to one side of the connection structure 32 close to the second insulating wall 312. The first insulating layer 313 is provided to insulate the connection structure 32 from the electrode layer, light absorption layer, and charge transfer layer in the battery cell 2.

[0097] Optionally, the first insulating layer 313 can be formed by etching the corresponding film layers to form grooves after all film layers of the battery cell 2 are prepared, and filling the grooves with insulating material on one side of the grooves near the second insulating wall 312. After the first insulating layer 312 is prepared, the grooves are filled with a conductive material to form the connecting structure 32. The connecting structure 32 protrudes from the first insulating layer 313 along the second direction at a position corresponding to the first insulating layer 313 to achieve electrical connection between the second electrode layer 52 and the connecting structure 32.

[0098] Optionally, the first insulating layer 313 is attached to a side of the connection structure 32 close to the second insulating wall 312 by gluing.

[0099] Figure 7 is a schematic diagram of a thin-film solar cell according to an embodiment of the present application. Optionally, in some embodiments, as shown in Figure 7 , the first insulating layer 313 extends from the second surface of the second electrode layer 52 to the first surface of the first electrode layer 51, where the first surface of the first electrode layer 51 is the surface of the first electrode layer 51 away from the substrate.

[0100] Optionally, along the first direction, a distance between the first insulating layer 313 and the second insulating wall 312 is greater than 0.

[0101] In some embodiments, the second isolation structure 33 is a groove extending from the second electrode layer 52 to the first electrode layer 51 along the second direction. In this way, isolation between adjacent second battery cells 2 can be achieved.

[0102] In some embodiments, the second isolation structure 33 extends along the second direction from the first surface of the second electrode layer 52 to the first surface of the first electrode layer 51. The first surface of the second electrode layer 52 is the surface of the second electrode layer 52 away from the first electrode layer 51, and the first surface of the first electrode layer 51 is the surface of the first electrode layer 51 away from the substrate 20. This facilitates the preparation of the second isolation structure 33.

[0103] Optionally, the second isolation structure 33 extends along the second direction from the first surface of the second electrode layer 52 to the second surface of the first electrode layer 51 . The second surface of the first electrode layer 51 is a surface of the first electrode layer 51 close to the substrate 20 .

[0104] Optionally, the second isolation structure 33 includes a third insulating wall and a second insulating layer, the third insulating wall extends along the second direction from the first surface of the second electrode layer 52 to the second surface of the second electrode layer 52, and the second insulating layer is attached to the side of the connection structure 32 close to the third insulating wall.

[0105] In some embodiments, along the first direction, the size k2 of the second isolation structure 33 is 30 μm to 100 μm, so that both the isolation effect of the second isolation structure 33 and the volume of the thin-film solar cell 1 can be taken into consideration.

[0106] In some embodiments, along the first direction, the distance d2 between the first isolation structure 31 and the second isolation structure 33 is 100 μm to 300 μm, and may be 200 μm to 300 μm. This reduces the difficulty of fabricating the first isolation structure 31 and the second isolation structure 33. For example, when fabricating the first isolation structure 31 and the second isolation structure 33 by scribing, the connection between the first isolation structure 31 and the second isolation structure 33 due to crossing or skewed scribing lines can be avoided.

[0107] The distance d2 between the first isolation structure 31 and the second isolation structure 33 is the minimum vertical distance between them along the first direction.

[0108] In some embodiments, along the first direction, the size k3 of the connection structure 32 is 30 μm to 150 μm, and optionally 30 μm to 100 μm, so as to balance the conductive performance of the connection structure 32 and the volume of the thin-film solar cell.

[0109] In some embodiments, along the first direction, the dimension k4 of the battery unit 2 is 6 mm to 10 mm, which facilitates the division and preparation of the second battery unit 2 .

[0110] In some embodiments, the band gap of the first light absorbing layer 54 is greater than the band gap of the second light absorbing layer 58 .

[0111] After sunlight enters substrate 20, because the band gap of first light absorbing layer 54 is larger than that of second light absorbing layer 58, first light absorbing layer 54 absorbs short-wavelength light, while second light absorbing layer 58 absorbs long-wavelength light. This maximizes the conversion of light energy into electrical energy, improving the utilization rate of sunlight. Therefore, this configuration helps improve the absorption efficiency of the light absorbing layer, thereby improving the photoelectric conversion efficiency.

[0112] In some embodiments, the first light absorbing layer 54 and the second light absorbing layer 58 are both perovskite layers. In this way, the first light absorbing layer 54 and the second light absorbing layer 58 are made of the same material, which is convenient for preparation and helps to reduce the difficulty of preparation.

[0113] Optionally, the band gap of the first light absorbing layer 54 is 1.6 eV to 1.9 eV, and the band gap of the second light absorbing layer 58 is 0.8 eV to 1.3 eV.

[0114] Optionally, the material of the first light absorbing layer 54 is FA 0.83 Cs 0.17 Pb(I 0.5 Br 0.5 )3; The material of the second light absorbing layer 58 is FA 0.75 Cs 0.25 Sn0.5 Pb 0.5 I3.

[0115] Optionally, the first light absorbing layer 54 is Cs 0.35 FA 0.65 PbI 1.8 Br 1.2 , the second light absorbing layer 58 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3.

[0116] In some embodiments, the first light absorbing layer 54 is a copper indium gallium selenium (CIGS) layer, and the second light absorbing layer 58 is a perovskite layer. For example, the second light absorbing layer 58 is a Cs 0.09 FA 0.77 MA 0.14 Pb(I 0.86 Br 0.14 ) 3. Thus, by setting the first light absorbing layer 54 as a copper indium gallium selenide layer, it is beneficial to improve the photoelectric conversion efficiency of the thin film solar cell.

[0117] In some embodiments, the thickness a1 of the first charge transport layer 53 is 10 nm to 30 nm, the thickness a2 of the first light absorption layer 54 is 100 nm to 400 nm, the thickness a3 of the second charge transport layer 55 is 20 nm to 60 nm, the thickness a4 of the third electrode layer 56 is 1 nm to 3 nm, the thickness a5 of the third charge transport layer 57 is 10 nm to 30 nm, the thickness a6 of the second light absorption layer 58 is 600 nm to 800 nm, the thickness a7 of the fourth charge transport layer 59 is 30 nm to 50 nm, and the thickness a8 of the second electrode layer 52 is 100 nm to 200 nm. This facilitates flexible selection of the thickness of each layer according to actual needs.

[0118] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and components may be substituted with equivalents without departing from the scope of the present application. In particular, the various technical features described in the various embodiments may be combined in any manner as long as there are no structural conflicts.

[0119] The present application provides an electrical device, comprising any one of the thin-film solar cells 1 described above, wherein the thin-film solar cell 1 is used to supply power to the electrical device.

[0120] Figure 8 is a schematic diagram of an electric device according to an embodiment of the present application. As shown in Figure 8 , the electric device is a vehicle 100 , and the thin-film solar cell 1 is disposed on the vehicle and is used to supply power to the vehicle or a battery in the vehicle.

[0121] Optionally, the power-consuming device may also be a street lamp, a power storage station or other equipment.

[0122] FIG9 is a schematic diagram of a method for preparing a thin film solar cell according to an embodiment of the present application. As shown in FIG9 , the method 200 includes: step 210 and step 220 .

[0123] Step 210 : providing a plurality of second battery cells 2 arranged along a first direction. The second battery cells 2 include a first electrode layer 51 and a second electrode layer 52 arranged along a second direction, and a plurality of functional layers located between the first electrode layer 51 and the second electrode layer 52 .

[0124] Step 220: Provide an interconnection structure 3. The interconnection structure 3 includes a first isolation structure 31, a connection structure 32, and a second isolation structure 33. The connection structure 32 is used to connect the first electrode layer 51 of the first second battery cell 22 and the second electrode layer 52 of the second second battery cell 2022 adjacent to each other in the plurality of second battery cells 2. The first isolation structure 31 is used to isolate the first electrode layer 51 of the first second battery cell 22 and the first electrode layer 51 of the second second battery cell 2022, and to isolate at least one functional layer of the first second battery cell 22 from the connection structure 32. The second isolation structure 33 is used to isolate the second electrode layer 52 of the first second battery cell 22 from the second electrode layer 52 of the second second battery cell 2022, and to isolate at least one functional layer of the second second battery cell 2022 from the connection structure 32.

[0125] The thin-film solar cell 1 manufactured by the method 200 has a higher output power.

[0126] In some embodiments, step 220 includes: etching the second electrode layer 52, the multi-layer functional layer, and the first electrode layer 51 along the second direction to expose the substrate to form a first groove, filling the first groove with an insulating material to form a first isolation structure 31; etching the second electrode layer 52 and the multi-layer functional layer along the second direction to expose the first electrode layer 51 to form a second groove, disposing a conductive material in the second groove and on the surface of the first isolation structure 31 to form a connection structure 32; and etching the second electrode layer 52 and the multi-layer functional layer along the second direction to expose the first electrode layer 51 to form a second isolation structure 33. In this way, the etching process can be performed after all film layers are formed, which helps to reduce the difficulty of preparation, simplify the preparation process, and reduce production costs.

[0127] In some embodiments, step 210 includes: providing a substrate 20, on which a first electrode layer 51 is disposed; depositing poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] on the first electrode layer 51 to prepare a first charge transport layer 53; depositing perovskite on the first charge transport layer 53 to prepare a first light absorption layer 54; sequentially depositing C60 and SnO2 on the first light absorption layer 54 to prepare a second charge transport layer 55; depositing Au on the second charge transport layer 55 to prepare a third electrode layer 56; and depositing amorphous metal on the first charge transport layer 54 to prepare a first light absorption layer 54. Poly(3,4-ethylenedioxythiophene monomer)-polystyrene sulfonate is deposited on the third electrode layer 56 to form a third charge transport layer 57; perovskite is deposited on the third charge transport layer 57 to form a second light absorption layer 58, and the band gap of the second light absorption layer 58 is smaller than the band gap of the first light absorption layer 54; C60 and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline are deposited in sequence on the second light absorption layer 58 to form a fourth charge transport layer 59; Cu is deposited on the fourth charge transport layer 59 to form the second electrode layer 52. This preparation method is simple, which helps to reduce the preparation difficulty and production cost.

[0128] Optionally, the electrode layers, charge transport layers, and light absorption layers on the substrate 20 are prepared by thermal evaporation or thermal deposition.

[0129] Optionally, etching is performed by laser scribing or mechanical scribing.

[0130] In some embodiments, the thickness of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is 18nm to 22nm, the thickness of the first light absorbing layer is 280nm to 320nm; the thickness of C60 in the second charge transport layer is 18nm to 22nm, the thickness of SnO2 is 18nm to 22nm; the thickness of Au is 1nm to 3nm; the band gap thickness of the second light absorbing layer is 600nm to 800nm; the thickness of C60 in the fourth charge transport layer is 28nm to 32nm, the thickness of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline is 6nm to 8nm; and the thickness of Cu is 140nm to 160nm. This allows for flexible selection of the thickness of each layer based on actual needs.

[0131] Example

[0132] The following describes the embodiments of the present application. The embodiments described below are exemplary and are only used to explain the present application, and should not be understood as limiting the present application. If no specific technology or conditions are specified in the embodiments, the technology or conditions described in the literature in this field or the product instructions shall be followed. In the following embodiments, the effective power generation area of ​​the thin film solar cell is 12 cm 2 , the number of battery cells is 7.

[0133] Example 1

[0134] Example 1 corresponds to the structure shown in FIG1 of the present application, and the preparation process of Example 1 is as follows.

[0135] (1) A piece of 80 mm*80 mm indium tin oxide (ITO) conductive glass is taken as the substrate 20 provided with the first electrode layer 51. The thickness of the first electrode layer 51 is 250 nm.

[0136] (2) The ITO conductive glass is cleaned, and a 20 nm thick layer of PTAA is prepared on the ITO conductive glass as the first charge transport layer 53 .

[0137] (3) A 300 nm perovskite layer is prepared on the first charge transport layer 51 to prepare the first light absorption layer 54. The material of the first light absorption layer 54 is FACsPb(Br 0.13 I 0.87 )3.

[0138] (4) Etching the first light absorbing layer 54 along the second direction to expose the substrate 20 and form a first groove; depositing polycarbonate polymethyl methacrylate as an insulating material in the first groove to prepare a first isolation structure 31.

[0139] (5) 20 nm of C60 was deposited on the first light absorbing layer 54 to prepare the second charge transport layer 55 .

[0140] (6) Etching the second charge transport layer 55 along the second direction to expose the first electrode layer 51 and form a second groove; depositing 150 nm of Cu in the second groove and on the second charge transport layer 55 to prepare the connection structure 32 and the second electrode layer 52, respectively.

[0141] (7) Etching the second electrode layer 52 along the second direction to expose the first electrode layer 51 to prepare the second isolation structure 33.

[0142] Example 2

[0143] Example 2 corresponds to the structure shown in Figure 2 of the present application. The difference between Example 2 and Example 1 is that along the second direction, the first isolation structure 31 penetrates the second charge transport layer 55, the first light absorption layer 54, the first charge transport layer 53 and the first electrode layer 51.

[0144] Example 3

[0145] Example 3 corresponds to the structure shown in FIG3 of the present application. The difference between Example 3 and Example 1 is that the thin-film solar cell is a stacked cell. The preparation process of Example 3 is as follows.

[0146] (1) A piece of 80 mm*80 mm indium tin oxide (ITO) conductive glass is taken as the substrate 20 provided with the first electrode layer 51. The thickness of the first electrode layer 51 is 500 nm.

[0147] (2) The ITO conductive glass is cleaned, and a 20 nm thick layer of PTAA is prepared on the ITO conductive glass as the first charge transport layer 53 .

[0148] (3) A 300 nm perovskite layer is prepared on the first charge transport layer 51 to prepare the first light absorption layer 54. The material of the first light absorption layer 54 is Cs 0.35 FA 0.65 PbI 1.8 Br 1.2 .

[0149] (4) Using thermal evaporation, 20 nm of C60 was deposited on the first light absorption layer 54 to form the second charge transport layer 55 .

[0150] (5) Atomic layer deposition is used to grow 20 nm of SnO2 on the second charge transport layer 55 as a dense layer.

[0151] (6) Using thermal evaporation, 2 nm of Au is evaporated on the dense layer as a tunneling composite layer to prepare the third electrode layer 56.

[0152] (7) A 20 nm thick PEDOT:PSS layer was formed on the third electrode layer 56 to form the third charge transport layer 57 .

[0153] (8) A 700 nm perovskite layer is prepared on the third charge transport layer 57 to prepare the second light absorbing layer 58. The material of the second light absorbing layer 58 is FA 0.7 MA 0.3 Pb 0.5 Sn 0.5 I3.

[0154] (9) Using thermal evaporation, 30 nm of C60 and 7 nm of BCP were prepared on the second light absorption layer 58 as the fourth charge transport layer 59.

[0155] (10) Using thermal evaporation, 150 nm of Cu was deposited on the fourth charge transport layer 59 to serve as the second electrode layer 52 .

[0156] (11) The second electrode layer 52 is etched along the second direction to expose the substrate 20, forming a first groove. Polycarbonate (PC) polymethyl methacrylate (PMMA) is deposited in the first groove as an insulating material to prepare a first isolation structure 31. The dimension k1 of the first isolation structure 31 along the first direction is 30 μm.

[0157] (12) Etching the second electrode layer 52 along the second direction to expose the first electrode layer 51 and form a second groove. Cu is deposited in the second groove to form a connection structure 32. Cu is deposited on a portion of the surface of the second electrode layer 52 to electrically connect the second electrode layer 52 to the connection structure 32. The dimension k3 of the connection structure 32 along the first direction is 80 μm.

[0158] (13) The second electrode layer 52 is etched along the second direction to expose the first electrode layer 51, thereby forming a second isolation structure 33. In the first direction, a dimension k2 of the second isolation structure 33 is 50 μm, a distance d2 between the first isolation structure 31 and the second isolation structure 33 is 250 μm, and a dimension k4 of the battery cell 2 is 8 mm.

[0159] Example 4

[0160] Example 4 corresponds to the structure shown in Figure 6 of this application. The difference between Example 4 and Example 3 is that the first isolation structure of Example 3 is a first insulating wall 311, and the first isolation structure 31 of Example 4 is a second insulating wall 312 and a first insulating layer 313.

[0161] After the second groove is formed, the first insulating layer 313 may be attached to a side of the second groove close to the second insulating layer 312 .

[0162] Example 5

[0163] Example 5 corresponds to the structure shown in FIG. 7 of the present application. The difference between Example 5 and Example 4 is that the first insulating layer 313 is not attached to the second electrode layer 52 .

[0164] Examples 6-9

[0165] The difference between Examples 6-9 and Example 3 is that the sizes of the first isolation structures 31 along the first direction are different. In Examples 6-9, the sizes k1 of the first isolation structures 31 along the first direction are 10 μm, 20 μm, 60 μm, and 80 μm, respectively.

[0166] Examples 10-12

[0167] The difference between Examples 10-12 and Example 3 is that the sizes of the second isolation structures 33 along the first direction are different. In Examples 10-12, the sizes k2 of the second isolation structures 33 along the first direction are 30 μm, 60 μm, and 100 μm, respectively.

[0168] Examples 13-14

[0169] The difference between Examples 13-14 and Example 3 is that the distance d2 between the first isolation structure 31 and the second isolation structure 33 along the first direction is different. In Examples 13-14, d2 is 200 μm and 300 μm, respectively.

[0170] Examples 15-17

[0171] The difference between Examples 15-17 and Example 3 is that along the first direction, the size k3 of the connection structure 32 is different. In Examples 15-17, k3 is 30 μm, 80 μm, and 100 μm, respectively.

[0172] Examples 18-19

[0173] The difference between Examples 18-19 and Example 3 is that the size k4 of the battery unit 2 along the first direction is different. In Examples 18-19, k4 is 6 mm and 10 mm respectively.

[0174] Example 20

[0175] The difference between Example 20 and Example 3 is that the materials of the first light absorbing layer 54 and the second light absorbing layer 58 are different. In Example 20, the substrate 20 is a glass substrate, the first conductive layer 51 is Mo, the first charge transport layer 53 is PTAA, the first light absorbing layer 54 is CIGS, the second charge transport layer 55 is ZnO2, the third electrode layer 56 is indium tin oxide, the third charge transport layer 57 is PTAA, and the second light absorbing layer 58 is Cs 0.09 FA 0.77 MA 0.14 Pb(I 0.86 Br 0.14 )3, the fourth charge transport layer 59 is PCBM, and the second electrode layer 52 is indium tin oxide.

[0176] Examples 21-22

[0177] The differences between Examples 21-22 and Example 3 are: the thickness a1 of the first charge transport layer 53, the thickness a2 of the first light absorbing layer 54, the thickness a3 of the second charge transport layer 55, the thickness a4 of the third electrode layer 56, the thickness a5 of the third charge transport layer 57, the thickness a6 of the second light absorbing layer 58, the thickness a7 of the fourth charge transport layer 59, and the thickness a8 of the second electrode layer 52. Specific data for each layer are shown in Table 1.

[0178] Table 1 Specific data of Example 3 and Examples 21-22

[0179]

[0180] Comparative Example 1

[0181] The difference between Comparative Example 1 and Example 1 is that the connection structure in Comparative Example 1 is not isolated from the first light absorbing layer.

[0182] Comparative Example 2

[0183] The difference between Comparative Example 2 and Example 3 is that the connection structure in Comparative Example 2 is not isolated from the third electrode layer, the first light absorbing layer and the second light absorbing layer.

[0184] Experimental methods

[0185] The performance of the thin-film solar cells prepared in the examples and comparative examples was tested. The specific operation process is as follows: Under standard simulated sunlight (AM 1.5G, 100mW / cm2), the cell performance was tested to obtain an IV curve. Based on the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm2), open-circuit voltage Voc (unit: V), maximum light output current Jmpp (unit: mA), and maximum light output voltage Vmpp (unit: V) can be obtained. The cell fill factor FF (unit: %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The PCE is calculated using the formula PCE = Jsc × Voc × FF / P in Calculate the photoelectric conversion efficiency PCE of the battery, unit %; P in Indicates the input power of incident light in mW.

[0186] Experimental results

[0187] The test results of the embodiments and comparative examples are shown in Table 2.

[0188] Table 2 Test results of comparative examples and embodiments

[0189] Jsc (mA·cm-2) Voc (V) FF (%) PCE (%) Comparative Example 1 2.34 6.92 5 3.49 8.66 Comparative Example 2 1.02 11.65 7.01 6.75 Example 1 2.67 7.21 6 2.31 12 Example 2 2.65 7.25 6 2.35 11.98 Example 3 1.92 13.63 711 8.58 Example 4 1.68 13.35 69.38 15.56 Example 5 1.72 13.24 69. 4515.58Example 61.8713.6170.3217.89Example 71.8913.5870.2318.02Example 81.8613.5670.1517.69Example 91.8313.5170.0917.33Example 101.8413.5969.8317.46Example 111.8613.6169.8817.68Example 121.8913.6269.9718.01

[0190] Example 131.7913.5870.2617.08 Example 141.8213.5970.3417.40 Example 151.6513.4869.6515.49 Example 161.8513.5570.2317.60 Example 171.8913.6270.6518.19 Example 181.7613.5370.5616.8 Example 191.9813.3263.7916.82 Example 201.6812.3962.1712.94 Example 211.8613.5969.5617.58 Example 221.7813.5469.8716.84

[0191] The greater the photoelectric conversion efficiency PCE, the greater the output power of the thin-film solar cell.

[0192] Combining Comparative Example 1 with Examples 1-2, it can be seen that by isolating the connection structure from at least one functional layer, the battery has greater photoelectric conversion efficiency and output power.

[0193] Combining Comparative Example 2 with Examples 3-22, it can be seen that by isolating the connection structure from at least one functional layer, the battery has greater photoelectric conversion efficiency and output power.

[0194] Combining Examples 1-2 with Examples 3-22, it can be seen that the thin-film solar cell with a stacked structure has higher photoelectric conversion efficiency and output power.

[0195] Combining Example 3 with Examples 6-19, it can be seen that by reasonably setting the sizes of the first isolation structure 31, the second isolation structure 33, the connection structure 32, and the battery unit 2, the complexity of the process preparation can be reduced while maintaining a high photoelectric conversion efficiency.

[0196] It can be seen from the combination of Example 3 and Example 20 that the structure of the thin-film solar cell of the present application can be applied to various types of light absorption layers.

[0197] Combining Example 3 with Examples 21-22, it can be seen that by reasonably setting the thickness of each functional layer, a high photoelectric conversion efficiency can be maintained while ensuring the normal function of the battery.

[0198] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and within the scope of the technical solution of the present application, embodiments having substantially the same structure as the technical concept and exerting the same effects are all included in the technical scope of the present application. In addition, within the scope of the subject matter of the present application, various modifications that can be conceived by those skilled in the art to the embodiments, and other methods constructed by combining some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A thin film solar cell (1), characterized in that: include: A plurality of battery cells (2) arranged along a first direction, the battery cells (2) comprising a first electrode layer (51) arranged along a second direction, a second electrode layer (52), and a multilayer functional layer (50) located between the first electrode layer (51) and the second electrode layer (52); An interconnection structure (3), the interconnection structure (3) comprising a first isolation structure (31), a connection structure (32) and a second isolation structure (33); the connection structure (32) is used to connect the first electrode layer (51) of the first battery cell (21) and the second electrode layer (52) of the second battery cell (22) adjacent to each other in the plurality of battery cells (2); the first isolation structure (31) is used to isolate the first electrode layer (51) of the first battery cell (21) and the first electrode layer (51) of the second battery cell (22), and to isolate at least one functional layer (50) of the first battery cell (21) and the connection structure (32); the second isolation structure (33) is used to isolate the second electrode layer (52) of the first battery cell (21) and the second electrode layer (52) of the second battery cell (22), and to isolate at least one functional layer (50) of the first battery cell (22) and the connection structure (32).

2. The thin film solar cell (1) according to claim 1, characterized in that The functional layer (50) includes a light absorbing layer, and the first isolation structure (31) is used to isolate the light absorbing layer and the connection structure (32).

3. The thin film solar cell (1) according to claim 1 or 2, characterized in that: The battery cell (2) comprises the first electrode layer (51), the first charge transport layer (53), the first light absorption layer (54), the second charge transport layer (55) and the second electrode layer (52) which are sequentially arranged on a substrate (20); the first isolation structure (31) is used to isolate the connection structure (32) from the first charge transport layer (53), the first light absorption layer (54) and the second charge transport layer (55).

4. The thin film solar cell (1) according to claim 3, characterized in that The battery cell (2) further comprises a third electrode layer (56), a third charge transport layer (57), a second light absorption layer (58) and a fourth charge transport layer (59) which are located between the second charge transport layer (55) and the second electrode layer (52) and are arranged in sequence; the first isolation structure (31) is used to isolate the connection structure (32) from the third electrode layer (56), the third charge transport layer (57), the second light absorption layer (58) and the fourth charge transport layer (59).

5. The thin film solar cell (1) according to claim 3 or 4, characterized in that: The first isolation structure (31) is an insulating structure extending from the second electrode layer (52) to the substrate (20) along the second direction.

6. The thin film solar cell (1) according to claim 5, characterized in that The insulating structure comprises a first insulating wall (311) extending along the second direction from the first surface of the second electrode layer (52) to the first surface of the substrate (20), wherein the first surface of the second electrode layer (52) is the surface of the second electrode layer (52) away from the first electrode layer (51), and the first surface of the substrate (20) is the surface of the substrate (20) close to the first electrode layer (51).

7. The thin film solar cell (1) according to claim 6, characterized in that The second electrode layer (52) protrudes from the first isolation structure (31) along the second direction at a position corresponding to the first isolation structure (31), so that the connection structure (32) is electrically connected to the second electrode layer (52).

8. The thin film solar cell (1) according to claim 6 or 7, characterized in that: Along the first direction, a distance (d1) between the connecting structure (32) and the first isolation structure (31) is greater than 0.

9. The thin film solar cell (1) according to any one of claims 6 to 8, characterized in that: Along the first direction, a size (k1) of the first isolation structure (31) is 10 μm to 80 μm.

10. The thin film solar cell (1) according to any one of claims 6 to 9, characterized in that: The material of the first insulating wall (311) includes at least one of epoxy resin, melamine formaldehyde resin, polycarbonate polymethyl methacrylate, polyethylene, polytetrafluoroethylene, phenol plastic, silicon boron, metal oxide, and inorganic solid with ionic structure.

11. The thin film solar cell (1) according to claim 5, characterized in that The first isolation structure (31) includes a second insulating wall (312) and a first insulating layer (313), wherein the second insulating wall (312) extends from the second surface of the first electrode layer (51) to the first surface of the first electrode layer (51) along the second direction, and the first insulating layer (313) is attached to a side of the connection structure (32) close to the second insulating wall (312), the first surface of the first electrode layer (51) is the surface of the first electrode layer (51) away from the substrate (20), and the second surface of the first electrode layer (51) is the surface of the first electrode layer (51) close to the substrate (20).

12. The thin film solar cell (1) according to any one of claims 1 to 11, characterized in that: The second isolation structure (33) is a groove extending from the second electrode layer (52) to the first electrode layer (51) along the second direction.

13. The thin film solar cell (1) according to claim 12, characterized in that The second isolation structure (33) extends along the second direction from the first surface of the second electrode layer (52) to the first surface of the first electrode layer (51), the first surface of the second electrode layer (52) being the surface of the second electrode layer (52) away from the first electrode layer (51), and the first surface of the first electrode layer (51) being the surface of the first electrode layer (51) away from the substrate (20).

14. The thin-film solar cell (1) according to claim 12 or 13, characterized in that: Along the first direction, a size (k2) of the second isolation structure (33) is 30 μm to 100 μm.

15. The thin film solar cell (1) according to any one of claims 1 to 14, characterized in that: Along the first direction, a distance (d2) between the first isolation structure (31) and the second isolation structure (33) is 200 μm to 300 μm.

16. The thin film solar cell (1) according to any one of claims 1 to 15, characterized in that: Along the first direction, the size (k3) of the connection structure (32) is 30 μm to 100 μm.

17. The thin film solar cell (1) according to any one of claims 1 to 16, characterized in that: Along the first direction, the size (k4) of the battery unit (2) is 6 mm to 10 mm.

18. The thin film solar cell (1) according to any one of claims 4 to 17, characterized in that: The band gap of the first light absorbing layer (54) is larger than the band gap of the second light absorbing layer (58).

19. The thin film solar cell (1) according to claim 18, characterized in that The first light absorbing layer (54) and the second light absorbing layer (58) are both perovskite layers.

20. The thin film solar cell (1) according to claim 18, characterized in that The first light absorbing layer (54) is a copper indium gallium selenide layer, and the second light absorbing layer (58) is a perovskite layer.

21. The thin film solar cell (1) according to any one of claims 4 to 20, characterized in that: The thickness (a1) of the first charge transport layer (53) is 10nm to 30nm, the thickness (a2) of the first light absorption layer (54) is 100nm to 400nm, the thickness (a3) ​​of the second charge transport layer (55) is 20nm to 60nm, the thickness (a4) of the third electrode layer (56) is 1nm to 3nm, the thickness (a5) of the third charge transport layer (57) is 10nm to 30nm, the thickness (a6) of the second light absorption layer (58) is 600nm to 800nm, the thickness (a7) of the fourth charge transport layer (59) is 30nm to 50nm, and the thickness (a8) of the second electrode layer (52) is 100nm to 200nm.

22. An electrical device, characterized in that: It comprises the thin film solar cell (1) according to any one of claims 1 to 21, wherein the thin film solar cell (1) is used to supply power to the electrical device.