Perovskite solar cell, preparation method thereof, photovoltaic module, system and device

Abstract

The invention relates to a perovskite solar cell, a preparation method thereof, a photovoltaic module, a system and an electric device. The perovskite solar cell comprises a first electrode layer, a perovskite light absorption layer and a second electrode layer which are stacked. The perovskite solar cell further comprises an interface passivation layer, the interface passivation layer is arranged on at least one surface of the perovskite light absorption layer, and the interface passivation layer comprises a perovskite quantum dot material. The perovskite quantum dot material comprises a perovskite quantum dot central site and an organic ligand which is in coordination binding with the perovskite quantum dot central site.

Description

Perovskite solar cell and preparation method thereof, photovoltaic module, system and device Technical Field

[0001] The present application relates to the field of material technology, and in particular to a perovskite solar cell and a preparation method thereof, a photovoltaic module, a system and a device. Background Art

[0002] Perovskite materials are organic-inorganic metal halides ABX3, which have an octahedral structure and abundant raw material reserves, and can be widely synthesized artificially. Perovskite materials have high photoelectric absorption coefficients, long carrier diffusion lengths, and shallow defect energy levels, which make perovskite materials have relatively low photoelectric losses. In addition, because the synthesis of perovskite materials is relatively simple, solar cells using perovskite materials as light absorption layers have the advantages of cost reduction and efficiency improvement, high low-light effect, and a wide range of application scenarios. They are an excellent choice for the new generation of mass-produced photovoltaic cells. The band gap of perovskite materials is adjustable, and by stacking cells with different band gaps, photons can be absorbed to the greatest extent, and the efficiency upper limit is much higher than the limit of crystalline silicon cells. Perovskite materials also have a high light absorption coefficient, and the cells can work normally even on cloudy days and in low-light scenes such as sunrise and sunset, and are widely used in the photovoltaic field.

[0003] However, perovskite materials suffer from poor stability during preparation and use. For example, the inhomogeneity of perovskite crystallization can lead to the formation of grain boundaries between the surface and the bulk phase. Furthermore, inherent problems in the crystallization process can lead to the emergence of vacancies, dislocations, and dangling bonds. These defects can become new recombination centers, affecting the stability and photoelectric conversion efficiency of solar cells.

[0004] Summary of the Invention

[0005] Based on this, the present application aims to provide a perovskite solar cell and its preparation method, photovoltaic module, system and electrical device that can improve cell stability and photoelectric conversion efficiency.

[0006] The first aspect of the present application provides a perovskite solar cell, comprising a first electrode layer, a perovskite light absorption layer, and a second electrode layer arranged in a stacked manner; the perovskite solar cell also includes an interface passivation layer, the interface passivation layer is arranged on at least one surface of the perovskite light absorption layer, the interface passivation layer includes a perovskite quantum dot material, the perovskite quantum dot material includes a perovskite quantum dot central site and an organic ligand coordinated and bound to the perovskite quantum dot central site, the organic ligand contains both a nitrogen-containing basic group and an organic acid functional group.

[0007] The above-mentioned perovskite solar cell forms an interface passivation layer containing a perovskite quantum dot material on at least one surface of the perovskite light absorption layer, and the organic ligand in the perovskite quantum dot material contains both nitrogen-containing basic groups and organic acid functional groups. The two groups can respectively passivate defects at different positions of the perovskite light absorption layer, wherein the organic acid functional group can form a strong rivet effect with the B-site atoms such as lead in the perovskite material, thereby increasing the stability of the octahedron in the perovskite; the nitrogen-containing basic group can form a hydrogen bond with the A-site atom in the perovskite material, thereby increasing the stability of the A-site atom. In this way, the perovskite quantum dot material has a strong binding force with the perovskite light absorption layer, has good stability, can play a role in passivating the surface defects of the perovskite light absorption layer, and thereby improve the stability and photoelectric conversion efficiency of the perovskite solar cell.

[0008] In any embodiment, the organic ligand satisfies at least one of the following conditions:

[0009] (1) The nitrogen-containing basic group is R1, and R1 includes -N(R3)2, -NHR4, -NH2 and -N(R5)3 + wherein R3, R4 and R5 each independently include a C1-C12 alkyl group; alternatively, R3, R4 and R5 each independently include a C2-C8 alkyl group;

[0010] (2) The organic acid functional group is R2, and R2 includes at least one of a carboxylic acid group, a sulfonic acid group, a sulfinic acid group, a thiol group, a phosphonic acid group, and a phosphinic acid group.

[0011] In any embodiment, the general formula of the organic ligand is R1-R-R2;

[0012] R is one or a combination of C1-C30 hydrocarbon group and aryl group;

[0013] Optionally, R is a combination of a C1-C30 hydrocarbon group and an aryl group, or is a C1-C30 hydrocarbon group;

[0014] More optionally, R is a combination of a C10-C20 hydrocarbon group and an aryl group, or is a C10-C20 hydrocarbon group;

[0015] More preferably, the aryl group is one or a combination of phenyl and naphthyl.

[0016] In any embodiment, the organic ligand includes at least one of 15-aminopentadecanoic acid, 3-(3-aminomethyl)phenylpropionic acid monohydrate, 13-aminotridecanoic acid, 12-aminododecanoic acid, 11-aminoundecanoic acid, 10-aminodecanoic acid, 8-aminooctanoic acid, 7-aminoheptanoic acid, 6-aminohexanoic acid, 5-aminopentanoic acid, 4-aminopentanoic acid, γ-aminobutyric acid, glycine, 12-amino-1-dodecanesulfonic acid, 11-amino-1-undecanesulfonic acid, 10-amino-1-decanesulfonic acid, 6-aminohexane-1-sulfonic acid, 5-aminopentane-1-sulfonic acid, 3-(cyclohexylamino)-1-propanesulfonic acid, 6-amino-2-naphthoic acid, p-aminobenzoic acid, 3-(N,N-dimethyldodecylammonium)propanesulfonate, 4-dimethylamino-1-butanethiol and aminosulfonic acid.

[0017] In any embodiment, the general formula of the perovskite material in the perovskite light absorbing layer and the central site of the perovskite quantum dot are each independently ABX3 or A2CDX6; the A ion is a monovalent cation, the B ion is a divalent metal cation, the C ion is a monovalent metal cation, the D ion is a trivalent metal cation, and the X ion is a monovalent anion;

[0018] Optionally, the A ion includes at least one of an organic cation and a metal cation; more preferably, the organic cation includes at least one of an organic amine ion, a formamidinium group, and an imidazole group; more preferably, the metal cation includes Li + 、Na + , K + , Rb + and Cs + At least one of;

[0019] Optionally, the B ions include Pb 2+ 、Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Cu 2+ and Ni 2+ More preferably, the B ions include Pb 2+ and Sn 2+ One or both of the following:

[0020] Optionally, the C ions include Cs + 、Ag + , K + Ru + At least one of;

[0021] Optionally, the D ions include Bi 3+ 、Ni 3+ 、Fe 3+ and Cu 3+ At least one of;

[0022] Optionally, the X ions include F - 、Cl - Br - and I - More preferably, the X ions include Cl - Br - and I - At least one of .

[0023] In any embodiment, the thickness of the interface passivation layer is 0.5 nm to 50 nm.

[0024] In any embodiment, the average particle size of the perovskite quantum dot material is 0.5 nm to 30 nm, and can be optionally 5 nm to 15 nm.

[0025] In any embodiment, the fluorescence emission peak of the perovskite quantum dot material is 200 nm to 800 nm, and the band gap energy of the perovskite quantum dot material is 1.55 eV to 6.2 eV.

[0026] In any embodiment, the thickness of the perovskite light absorbing layer is 300 nm to 1000 nm.

[0027] In any embodiment, the average particle size of the perovskite material in the perovskite light absorbing layer is 0.1 μm to 1 μm.

[0028] The second aspect of the present application provides a method for preparing the perovskite solar cell according to the first aspect of the present application, comprising the following steps:

[0029] (1) preparing a first electrode layer;

[0030] (2) preparing a perovskite light absorbing layer; and

[0031] (3) preparing a second electrode layer;

[0032] Wherein, between step (1) and step (2), and / or between step (2) and step (3), step (I) is performed: preparing the interface passivation layer.

[0033] In any embodiment, the step (I) comprises:

[0034] Step (i) preparing a dispersion of the perovskite quantum dot material;

[0035] Step (ii) coating the dispersion of the perovskite quantum dot material to prepare the interface passivation layer.

[0036] In any embodiment, the perovskite solar cell is the above-mentioned perovskite solar cell; the step (i) comprises the following steps (a) to (d):

[0037] (a) mixing a first solvent and a material containing A in an inert atmosphere to prepare a first solution;

[0038] (b) mixing a second solvent and BX2 in an inert atmosphere to prepare a second solution; the organic ligand is added in at least one of steps (a) and (b);

[0039] (c) mixing the first solution and the second solution, reacting at 120-250° C., and then cooling in an ice bath to obtain a third solution;

[0040] (d) extracting and separating the third solution with an organic solvent, retaining the supernatant, and obtaining a dispersion of the perovskite quantum dot material.

[0041] The third aspect of the present application provides a photovoltaic module, comprising the perovskite solar cell provided in the first aspect of the present application.

[0042] A fourth aspect of the present application provides a photovoltaic system, comprising the photovoltaic assembly provided by the third aspect of the present application.

[0043] The fifth aspect of the present application provides an electrical device comprising at least one selected from the perovskite solar cell provided in the first aspect of the present application and the photovoltaic module provided in the third aspect of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] FIG1 is a scanning electron microscope image of a perovskite light absorption layer of a solar cell according to an embodiment of the present application.

[0045] FIG2 is a schematic diagram of a solar cell according to an embodiment of the present application.

[0046] FIG3 is a schematic diagram of a solar cell according to another embodiment of the present application.

[0047] FIG4 is a schematic diagram of an electrical device using a solar cell as a power source according to an embodiment of the present application.

[0048] Explanation of the accompanying symbols: 1. Solar cell; 11. Transparent electrode; 12. Electron transport layer; 13. Interface passivation layer; 14. Perovskite light absorption layer; 15. Hole transport layer; 16. Second electrode layer 16; 2. Electric device. DETAILED DESCRIPTION

[0049] Below, embodiments of the battery, preparation method, and electrical device disclosed herein are described in detail, with appropriate reference to the accompanying drawings. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repeated descriptions of substantially identical structures may be omitted. This is to avoid unnecessary length in the following description and to facilitate understanding by those skilled in the art. In addition, the drawings and the following description are provided to enable those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0050] " range " disclosed in the present application is limited in the form of lower limit and upper limit, and given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of special range. The scope limited in this way can be to include end value or not include end value, and can be arbitrarily combined, that is, any lower limit can form a range with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for specific parameters, it is understood that the scope of 60-110 and 80-120 is also expected. In addition, if the minimum range value 1 and 2 are listed, and if the maximum range value 3,4 and 5 are listed, then the following range can all be expected: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5. In this application, unless otherwise specified, the numerical range " ab " represents the abbreviation of any real number combination between a and b, wherein a and b are all real numbers. For example, a numerical range of "0-5" indicates that all real numbers between "0-5" are listed herein, and "0-5" is simply an abbreviation for these numerical combinations. Furthermore, when a parameter is expressed as an integer ≥ 2, this is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0051] Unless otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0052] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0053] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0054] Unless otherwise specified, the terms "include" and "comprising" used in this application may be open-ended or closed-ended. For example, "include" and "comprising" may mean that other components not listed may also be included or that only the listed components are included.

[0055] Unless otherwise specified, the term "or" is used in this application to be inclusive. For example, the phrase "A or B" means "A, B, or both A and B." More specifically, the condition "A or B" is satisfied if any of the following conditions are met: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0056] In this application, the term "alkyl" refers to the residue remaining after a saturated alkane containing a primary (normal) carbon atom, a secondary carbon atom, a tertiary carbon atom, a quaternary carbon atom, or a combination thereof loses one hydrogen atom. Phrases containing this term, for example, "C1-C20 alkyl" refers to an alkyl group containing 1 to 10 carbon atoms, and each occurrence can independently be C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, C9 alkyl, C10 alkyl, C12 alkyl, C15 alkyl, or C20 alkyl. Suitable examples include, but are not limited to, methyl (Me, -CH3), ethyl (Et, -CH2CH3), 1-propyl (n-Pr, n-propyl, -CH2CH2CH3), 2-propyl (i-Pr, i-propyl, -CH(CH3)2), 1-butyl (n-Bu, n-butyl, -CH2CH2CH2CH3), 2-methyl-1-propyl (i-Bu, i-butyl, -CH2CH(CH3)2), 2-butyl (s-Bu, s-butyl, -CH(C H3)CH2CH3), 2-methyl-2-propyl (t-Bu, t-butyl, -C(CH3)3), 1-pentyl (n-pentyl, -CH2CH2CH2CH2CH3), 2-pentyl (-CH(CH3)CH2CH2CH3), 3-pentyl (-CH(CH2CH3)2), 2-methyl-2-butyl (-C(CH3)2CH2CH3), 3-methyl-2-butyl (-CH(CH3)CH(CH3)2), 3-methyl-1-butyl (- CH2CH2CH(CH3)2), 2-methyl-1-butyl (-CH2CH(CH3)CH2CH3), 1-hexyl (-CH2CH2CH2CH2CH2CH3), 2-hexyl (-CH(CH3)CH2CH2CH2CH3), 3-hexyl (-CH(CH2CH3)(CH2CH2CH3)), 2-methyl-2-pentyl (-C(CH3)2CH2CH2CH3), 3-methyl-2-pentyl (-CH(CH3)CH( )2), 2-methyl-3-pentyl (-CH(CH2CH3)CH(CH3)2), 2,3-dimethyl-2-butyl (-C(CH3)2CH(CH3)2), 3,3-dimethyl-2-butyl (-CH(CH3)C(CH3)3 and octyl (-(CH2)7CH3).

[0057] In this application, the term "hydrocarbyl" refers to the group remaining after a hydrocarbon containing only carbon and hydrogen atoms loses a hydrogen atom (H), including the group remaining after a saturated alkane loses a hydrogen atom (i.e., alkyl) and the group remaining after an unsaturated alkane loses a hydrogen atom. The group remaining after an unsaturated alkane loses a hydrogen atom includes an alkenyl group.

[0058] In the present application, the term "three-dimensional perovskite" refers to a perovskite having a three-dimensional crystal structure with a BX6 (or CX6, DX6) octahedral framework and A-site cations occupying vertex positions.

[0059] One embodiment of the present application provides a perovskite solar cell comprising a first electrode layer, a perovskite light absorbing layer, and a second electrode layer stacked in layers. The perovskite solar cell further comprises an interface passivation layer.

[0060] The interfacial passivation layer is disposed on at least one surface of the perovskite light absorbing layer and includes a perovskite quantum dot material. The perovskite quantum dot material includes a perovskite quantum dot central site and an organic ligand coordinated and bound to the perovskite quantum dot central site, wherein the organic ligand contains both a nitrogen-containing basic group and an organic acid functional group.

[0061] It is understood that the perovskite light absorbing layer is a three-dimensional perovskite thin film. The perovskite material included in the perovskite light absorbing layer is a three-dimensional perovskite. The perovskite light absorbing layer can be prepared using methods commonly used in the art, including but not limited to sol-gel methods, coating, multi-source co-evaporation, and other methods. It is understood that coating methods include but are not limited to spin coating, slit coating, brush coating, wipe coating, doctor blade coating, screen coating, and spray coating.

[0062] Due to the uneven crystallization of the perovskite material in the perovskite light absorption layer during the preparation process, grain boundaries appear between the crystal surface and the bulk phase, as well as vacancies, dislocations, and dangling bonds. These defects can become new recombination centers, affecting the efficiency and stability of the battery. Because perovskite quantum dots (QDs) are a zero-dimensional optoelectronic nanomaterial and also a perovskite material, they can be well integrated into the perovskite light absorption layer.

[0063] The above-mentioned perovskite solar cell forms an interface passivation layer containing a perovskite quantum dot material on at least one surface of the perovskite light absorption layer, and the organic ligand in the perovskite quantum dot material contains both nitrogen-containing basic groups and organic acid functional groups. The two groups can respectively passivate defects at different positions of the perovskite light absorption layer, wherein the organic acid functional group can form a strong rivet effect with the B-site atoms such as lead in the perovskite material, thereby increasing the stability of the octahedron in the perovskite; the nitrogen-containing basic group can form a hydrogen bond with the A-site atom in the perovskite material, thereby increasing the stability of the A-site atom. In this way, the perovskite quantum dot material has a strong binding force with the perovskite light absorption layer, has good stability, can play a role in passivating the surface defects of the perovskite light absorption layer, and thereby improve the stability and photoelectric conversion efficiency of the perovskite solar cell.

[0064] In addition, organic ligands can also dissolve the raw materials needed to prepare perovskite materials, and can also serve as surfactants for perovskite materials, controlling the growth and morphology of perovskite quantum dot materials.

[0065] Furthermore, the general formula of the perovskite material in the central site of the above-mentioned perovskite quantum dot and the above-mentioned perovskite light absorption layer is independently ABX3 or A2CDX6; the A ion is a monovalent cation, the B ion is a divalent metal cation, the C ion is a monovalent metal cation, the D ion is a trivalent metal cation, and the X ion is a monovalent anion.

[0066] Optionally, the A ion includes at least one of an organic cation and a metal cation. More preferably, the organic cation includes at least one of an organic amine ion, a formamidinium group (FA), and an imidazole group; More preferably, the metal cation includes Li + 、Na + , K + , Rb + and Cs + Further, the organic amine ion includes at least one of methylamino (MA), ethylamino, propylamino, butylamino, pentylamino and hexylamino.

[0067] Optionally, the B ions include Pb 2+ 、Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Cu 2+ and Ni 2+More preferably, the B ions include Pb 2+ and Sn 2+ One or both of them.

[0068] Optionally, the C ions include Cs + 、Ag + , K + Ru + At least one of .

[0069] Optionally, the D ions include Bi 3+ 、Ni 3+ 、Fe 3+ and Cu 3+ At least one of;

[0070] Optionally, the X ions include F - 、Cl - Br - and I - At least one of; Optionally, the X ions include Cl - Br - and I - At least one of .

[0071] It is understandable that the central site of the perovskite quantum dot and the perovskite material in the perovskite light absorbing layer may be the same or different.

[0072] Optionally, the perovskite materials in the above-mentioned perovskite quantum dot central site and the above-mentioned perovskite light absorption layer are each independently selected from at least one of CsFAPbX3, CsMAPbX3, CsFAMAPbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, CsMAPbSnX3, CsFAMAPbSnX3, CsPbSnX3, MAPbSnX3 and FAPbSnX3.

[0073] As an example, the perovskite materials in the central site of the perovskite quantum dot and the perovskite light absorbing layer are independently selected from at least one of CsFAPbI3, CsPbI3, and FAPbI3.

[0074] Optionally, the elements of the central site of the perovskite quantum dot and the perovskite material in the perovskite light absorbing layer are at least partially the same.

[0075] Optionally, the B element at the central site of the perovskite quantum dot is selected from the B element of the perovskite material in the perovskite light absorbing layer.

[0076] More optionally, the A element at the central site of the perovskite quantum dot is selected from the A element of the perovskite material in the perovskite light absorbing layer; and the X element at the central site of the perovskite quantum dot is selected from the X element of the perovskite material in the perovskite light absorbing layer.

[0077] For example, the perovskite material in the above-mentioned perovskite light absorption layer is CsFAPbI3, and the central site of the above-mentioned perovskite quantum dot can be CsPbI3 or FAPbI3.

[0078] In some embodiments, the nitrogen-containing basic group is R1, and R1 includes -N(R3)2, -NHR4, -NH2 and -N(R5)3 + wherein R3, R4 and R5 each independently comprise a C1-C12 alkyl group. Alternatively, R3, R4 and R5 each independently comprise a C2-C8 alkyl group.

[0079] Furthermore, R3, R4 and R5 are each independently selected from a C1-C12 alkyl group or a C2-C8 alkyl group which is unsubstituted or substituted with at least one R6. R6 is each independently selected from a halogen, an alkyl group, a hydroxyl group, an alkoxyl group, an alkyl acyl group, an alkyl ester group, a phenyl group, a six-membered heterocyclic group or a condensed heterocyclic group. The six-membered heterocyclic group and the condensed heterocyclic group are each independently optionally substituted with at least one substituent selected from the following: halogen, an alkyl group, a hydroxyl group, an alkoxyl group, an alkyl acyl group, an alkyl ester group and a phenyl group. The condensed heterocyclic group includes at least one of a six-membered ring fused with a five-membered ring heterocyclic ring or a six-membered ring fused with a six-membered ring heterocyclic ring. The heteroatom in the heterocyclic group includes at least one of N, O or S.

[0080] It is understood that "optionally" means optionally. For example, a six-membered heterocyclic group or a fused heterocyclic group is each independently optionally substituted with at least one substituent selected from the following, which means that the unsubstituted six-membered heterocyclic group or fused heterocyclic group may also be substituted with at least one substituent selected from the following.

[0081] A six-membered heterocyclic ring refers to a ring having six atoms, wherein, in addition to carbon atoms, the ring further contains at least one heteroatom selected from N, O, or S. As an example, the six-membered heterocyclic ring includes, but is not limited to, at least one of pyridine, pyrazine, pyrimidine, and pyridazine.

[0082] A fused heterocyclic ring means that the atoms constituting the fused ring contain, in addition to carbon atoms, at least one heteroatom selected from N, O, and S. A fused ring means that there are at least two cyclic structures that share at least two ring atoms.

[0083] The term "fused heterocyclic ring" refers to at least one of a six-membered ring fused to a five-membered ring or a six-membered ring fused to a six-membered ring. This means that the fused heterocyclic group may include at least one six-membered ring fused to a five-membered ring, or at least one six-membered ring fused to a six-membered ring. It is understood that in some examples, another five-membered ring or six-membered ring may be included, or even three or more ring structures may be fused. By way of example, the fused heterocyclic ring includes, but is not limited to, at least one of indole, quinoline, pteridine, and acridine.

[0084] In some embodiments, the organic acid functional group is R2, and R2 includes at least one of a carboxylic acid group (-COOH), a sulfonic acid group (-SO3H), a sulfinic acid group (-SO2H), a thiol group (-SH), a phosphonic acid group (-H2PO3) and a phosphinate group (-H2PO2).

[0085] In some embodiments, the organic ligand has the general formula R1-R-R2, wherein R is one or a combination of a C1-C30 hydrocarbon group and an aryl group. It is understood that R is a hydrocarbon chain having 1-30 carbon atoms, or an aryl group, or a hydrocarbon chain containing an aryl group, wherein the hydrocarbon chain excluding the aryl group has 1-30 carbon atoms.

[0086] Optionally, R is a combination of a C1-C30 hydrocarbon group and an aryl group, or is a C1-C30 hydrocarbon group.

[0087] C1-C30 hydrocarbon groups are a general term for hydrocarbon groups with 1 to 30 carbon atoms, including C1-C30 saturated alkyl groups and C2-C30 unsaturated alkyl groups. These C1-C30 saturated alkyl groups and C2-C30 unsaturated alkyl groups may be unsubstituted or substituted with functional groups. Alternatively, the C1-C30 hydrocarbon group may be a C8-C30 hydrocarbon group, a C10-C30 hydrocarbon group, a C10-C25 hydrocarbon group, or a C10-C20 hydrocarbon group.

[0088] Furthermore, R is a C1-C30 alkyl group, a C8-C30 alkyl group, a C10-C30 alkyl group, a C10-C25 hydrocarbon group, or a C10-C20 alkyl group. Furthermore, when the number of carbon atoms is 3 to 30, it can be a chain alkyl group or a cyclic alkyl group.

[0089] As an example, R is a C10-C20 hydrocarbon group and an aryl group, or a combination of both. Further, R is a combination of a C10-C20 hydrocarbon group and an aryl group, or is a C10-C20 hydrocarbon group.

[0090] Aryl refers to the general term for a monovalent group left after removing a hydrogen atom from the aromatic carbon nucleus of an aromatic hydrocarbon molecule, usually represented by Ar. Aryl can be a monocyclic aromatic group (such as phenyl), a condensed aromatic group (such as naphthyl), two or more monocyclic aromatic groups conjugated by a carbon-carbon bond (such as biphenyl), a monocyclic aromatic group and a condensed aromatic group conjugated by a carbon-carbon bond, or two or more condensed aromatic groups conjugated by a carbon-carbon bond. Specific examples of aryl include, but are not limited to, phenyl, naphthyl, anthracenyl, phenanthrenyl, biphenyl, terphenyl, benzo[9,10]phenanthrenyl, pyrenyl, benzofluoranthenyl, alkyl, dibenzocycloalkyl (such as acenaphthenyl, fluorenyl, spirofluorene, dihydroanthracene), etc.

[0091] Furthermore, the aryl group in the above R can be selected as phenyl.

[0092] In some specific examples, the organic ligands include but are not limited to 15-aminopentadecanoic acid (CAS No.: 17437-21-7), 3-(3-aminomethyl)phenylpropionic acid monohydrate (CAS No.: 55197-35-8), 13-aminotridecanoic acid, 12-aminododecanoic acid, 11-aminoundecanoic acid, 10-aminodecanoic acid, 8-aminooctanoic acid, 7-aminoheptanoic acid, 6-aminohexanoic acid, 5-aminovaleric acid, 4-aminovaleric acid , γ-aminobutyric acid, glycine, 12-amino-1-dodecanesulfonic acid, 11-amino-1-undecanesulfonic acid, 10-amino-1-decanesulfonic acid, 6-aminohexane-1-sulfonic acid, 5-aminopentane-1-sulfonic acid, 3-(cyclohexylamine)-1-propanesulfonic acid, 6-amino-2-naphthoic acid, p-aminobenzoic acid, 3-(N,N-dimethyldodecylammonium)propanesulfonate, 4-dimethylamino-1-butanethiol and at least one of aminosulfonic acid.

[0093] In some embodiments, the fluorescence emission peak of the perovskite quantum dot material is between 200 nm and 800 nm. Furthermore, the band gap energy of the perovskite quantum dot material is between 1.55 eV and 6.2 eV. The band gap can be measured by ultraviolet absorption spectroscopy, obtaining an ultraviolet absorption curve, and then calculating the band gap using the Tauc equation.

[0094] In some embodiments, the thickness of the perovskite light absorbing layer is 300 nm to 1000 nm, and optionally 300 nm to 800 nm.

[0095] In some embodiments, the perovskite material in the perovskite light absorbing layer has an average particle size of 0.1 μm to 1 μm. In a specific example, the perovskite material in the perovskite light absorbing layer is granular, and its scanning electron microscope morphology is shown in FIG1 .

[0096] In this article, the “average particle size” of the perovskite material in the perovskite light absorption layer is obtained by obtaining a scanning electron microscope image using a scanning electron microscope method, and then 20 particles are randomly selected from the image to obtain their particle sizes and take the average value.

[0097] In some embodiments, the average particle size of the perovskite quantum dot material is 0.5 nm to 30 nm, and can be optionally 1 nm to 30 nm, or 5 nm to 15 nm.

[0098] In this article, the “average particle size” of the perovskite quantum dot material in the perovskite light absorption layer is obtained by obtaining a transmission electron microscope image using a transmission electron microscope method, and then 20 particles are randomly selected from them to obtain their particle sizes and take the average value.

[0099] In some embodiments, the thickness of the interface passivation layer is 0.5 nm to 50 nm.

[0100] It is understandable that the above-mentioned perovskite solar cell generally further includes a first transmission layer and / or a second transmission layer.

[0101] The first transmission layer is arranged between the first electrode layer and the perovskite light absorbing layer. The second transmission layer is arranged between the second electrode layer and the perovskite light absorbing layer.

[0102] It is understood that the interface passivation layer may be disposed on the interface between the first transmission layer and the perovskite light absorbing layer, and / or on the interface between the second transmission layer and the perovskite light absorbing layer, specifically on the surface of the perovskite light absorbing layer facing the first transmission layer and / or the second transmission layer.

[0103] Optionally, one of the first transport layer and the second transport layer includes at least one of an electron transport layer and a hole blocking layer; and the other includes at least one of a hole transport layer and an electron blocking layer.

[0104] Wherein, when the electron transport layer and the hole blocking layer exist at the same time, the electron transport layer is arranged closer to the perovskite light absorbing layer than the hole blocking layer. When the hole transport layer and the electron blocking layer exist at the same time, the hole transport layer is arranged closer to the perovskite light absorbing layer than the electron blocking layer.

[0105] The electron transport layer material can be but is not limited to at least one of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, methoxytriphenylamine-fluoroformamidine (OMeTPA-FA), PCBM ([6,6]-phenyl C61 butyric acid methyl ester), calcium titanate (CaTiO3), lithium fluoride (LiF), calcium fluoride (CaF2), poly (3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), poly 3-Hexylthiophene (P3HT), triphenylamine with triptycene as the core (H101), 3,4-ethylenedioxythiophene-methoxytriphenylamine (EDOT-OMeTPA), N-(4-phenylamino)carbazole-spirobifluorene (CzPAF-SBF), polythiophene, metal oxides (metal elements are selected from Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, or Cr), silicon oxide (SiO2), strontium titanate (SrTiO3), cuprous thiocyanate (CuSCN).

[0106] The hole blocking layer material may include, but is not limited to, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline).

[0107] In a specific example, the electron transport layer adopts a PCBM layer, and the hole blocking layer adopts a BCP layer. The electron transport layer is arranged closer to the perovskite light absorption layer than the hole blocking layer. The BCP layer serves as the electron transport layer of the perovskite battery. The BCP molecular structure contains N atoms with lone pairs of electrons, which can effectively passivate the surface defects of the perovskite light absorption layer and the PCBM layer, promote the transfer and separation of charges at the interface, and help eliminate the current hysteresis of the battery device.

[0108] The hole transport layer material can be but is not limited to at least one of the following materials and their derivatives: 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), NiOx (nickel oxide), poly-3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), WO3, etc., which can transport holes and block electrons. One or more materials.

[0109] It is understandable that in order to enable light to be effectively transmitted to the perovskite light absorption layer, at least one electrode in the perovskite solar cell is set to be a transparent electrode.

[0110] It can be understood that the perovskite solar cell includes a regular structure and a trans structure in terms of structure. Optionally, the first electrode is a transparent electrode.

[0111] In terms of the formal structure, a perovskite solar cell comprises a transparent electrode and, stacked sequentially on the transparent electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer, and a second electrode layer. The first electrode layer is a transparent electrode, specifically a cathode, and the second electrode layer is an anode. The interfacial passivation layer can be disposed between the perovskite light absorption layer and the electron transport layer, and / or between the perovskite light absorption layer and the hole transport layer.

[0112] As shown in FIG2 , in one specific example, the perovskite solar cell 1 includes a transparent electrode 11 and an electron transport layer 12, an interface passivation layer 13, a perovskite light absorbing layer 14, a hole transport layer 15, and a second electrode layer 16 sequentially stacked on the transparent electrode 11. It is understood that in another specific example, the perovskite solar cell includes a transparent electrode and an electron transport layer, a perovskite light absorbing layer, a hole transport layer, a interface passivation layer, and a second electrode layer sequentially stacked on the transparent electrode.

[0113] For the inverted structure, the perovskite solar cell includes a transparent electrode and a hole transport layer, a perovskite light absorbing layer, an electron transport layer, and a second electrode layer stacked in sequence on the transparent electrode. The first electrode layer is a transparent electrode, specifically an anode, and the second electrode layer is a cathode. The interface passivation layer of the perovskite solar cell of the present application can be provided between the perovskite light absorbing layer and the electron transport layer, and / or between the perovskite light absorbing layer and the hole transport layer.

[0114] As shown in FIG3 , in one specific example, the perovskite solar cell 1 includes a transparent electrode 11 and a hole transport layer 15, a perovskite light absorbing layer 14, an electron transport layer 12, an interface passivation layer 13, and a second electrode layer 16 sequentially stacked on the transparent electrode 11. It is understood that in another specific example, the perovskite solar cell includes a transparent electrode and a hole transport layer, an interface passivation layer, a perovskite light absorbing layer, an electron transport layer, an interface passivation layer, and a second electrode layer sequentially stacked on the transparent electrode.

[0115] The transparent electrode may be a transparent conductive metal oxide electrode. Examples of materials for the transparent electrode include transparent conductive glasses such as FTO, ITO, AZO, BZO, and IZO. It is understood that in addition to using glass as a substrate, the transparent electrode may also use a transparent flexible substrate. Specifically, the material of the transparent flexible substrate may include an organic polymer material, which may be a mixture of one or more of the following materials in different proportions: polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS).

[0116] The material of the second electrode layer is, but is not limited to, an organic or inorganic conductive material, or a mixture of the two in varying proportions. For example, the second electrode layer is a metal electrode, such as a conductive metal material such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), bismuth (Bi), platinum (Pt), magnesium (Mg), or a mixture thereof. For example, the second electrode layer is a transparent conductive metal oxide electrode, such as FTO, ITO, or aluminum-doped zinc oxide (AZO).

[0117] The present application provides a method for preparing a perovskite solar cell, comprising the following steps: (1) preparing a first electrode layer; (2) preparing a perovskite light absorption layer; and (3) preparing a second electrode layer.

[0118] Wherein, between step (1) and step (2), and / or between step (2) and step (3), step (I) is performed: preparing an interface passivation layer.

[0119] It can be understood that in step (I), between step (1) and step (2), an interface passivation layer is formed on the first electrode layer, and then a perovskite light absorption layer is formed on the interface passivation layer.

[0120] It can be understood that in step (I), between step (2) and step (3), an interface passivation layer is formed on the perovskite light absorption layer, and then a second electrode layer is formed on the interface passivation layer.

[0121] Specifically, as an example, the perovskite solar cell is a trans-type one, and the above-mentioned interface passivation layer is provided between the perovskite light absorption layer and the electron transport layer. The preparation method thereof includes the following steps:

[0122] Step 1: Etch and clean the transparent electrode and dry it;

[0123] Step 2: Prepare a hole transport layer on the transparent electrode;

[0124] Step 3: preparing a perovskite light absorption layer on the hole transport layer;

[0125] Step 4: preparing the above-mentioned interface passivation layer on the perovskite light absorption layer;

[0126] Step 5: preparing an electron transport layer on the interface passivation layer;

[0127] Step 5: Prepare a second electrode layer on the electron transport layer.

[0128] In some examples, step (I) includes: step (i) and step (ii).

[0129] Step (i) preparing a dispersion of perovskite quantum dot material.

[0130] Step (ii) coating a dispersion of perovskite quantum dot material to prepare an interface passivation layer.

[0131] In this way, a dispersion of perovskite quantum dot material is prepared and then applied to a corresponding substrate by coating.

[0132] Specifically, the general formula of the perovskite material in the perovskite quantum dot material is the above-mentioned ABX3. Step (i) includes the following steps (a) to (d).

[0133] (a) Mixing a first solvent and a material containing A in an inert atmosphere to prepare a first solution.

[0134] (b) mixing the second solvent and BX2 in an inert atmosphere to prepare a second solution. The organic ligand is added in at least one of steps (a) and (b).

[0135] (c) The first solution and the second solution are mixed, reacted at 120-250° C., and then placed in an ice bath to obtain a third solution.

[0136] (d) extracting and separating the third solution with an organic solvent, retaining the supernatant, and obtaining a dispersion of the perovskite quantum dot material.

[0137] It is understood that the "inert atmosphere" herein refers to a gas atmosphere with very low activity in the system and does not participate in the reaction, including but not limited to an inert gas atmosphere.

[0138] It is understood that there is no order restriction between steps (a) and (b).

[0139] A includes at least one of MA, FA, and Cs. Further, the material containing A may be a salt containing A. As an example, the material containing A includes but is not limited to at least one of iodomethane (FAI), chloromethylamine (MACl), cesium iodide (CsI), and cesium carbonate.

[0140] Furthermore, the organic ligand is added in step (a), and the ratio of the amount of the organic ligand to the amount of the substance containing A in step (a) is (1-10):1, and can be optionally (1-5):1.

[0141] Furthermore, the selection ranges of B and X in BX2 are the same as above and will not be repeated here.

[0142] Furthermore, when the organic ligand is added in step (b), the molar ratio of the organic ligand to BX2 in step (b) is (1-10):1, and can be optionally (1-5):1. It is understood that when the organic ligand is added in both steps (a) and (b), the types thereof may be the same or different.

[0143] Furthermore, the mixing ratio of the first solution and the second solution in step (c) can be determined according to the stoichiometric ratio of A to B atoms in ABX3, that is, the stoichiometric ratio of A to B atoms in the first solution and the second solution during mixing in step (c) is controlled to be approximately 1:1, for example, 1:(0.8~1.2).

[0144] The organic solvent in the above step (d) includes but is not limited to at least one of n-hexane, ethyl acetate and toluene, which can play a role in dispersing the perovskite quantum dot material.

[0145] In some examples, (2) a method for preparing a perovskite light absorbing layer comprises the following steps: mixing a material containing A, BX2 and a solvent to prepare a perovskite precursor solution; coating the perovskite precursor solution on a corresponding substrate, and annealing to obtain a perovskite light absorbing layer.

[0146] The first electrode, hole transport layer, electron transport layer, and second electrode can be prepared using commonly used preparation methods in the art, including but not limited to solution methods and solid deposition methods. Solution methods include any of spin coating, spray coating, blade coating, and slit coating, and solid deposition methods include any of vacuum evaporation, sputtering deposition, plasma deposition, and ion deposition. One embodiment of the present application also provides a photovoltaic module comprising the above-mentioned perovskite solar cell.

[0147] The above-mentioned perovskite solar cells have high light conversion efficiency and good stability, which can improve the efficiency of photovoltaic modules.

[0148] The above-mentioned photovoltaic module includes one or more perovskite solar cells, which can be selected according to the specific application scenario; further, the above-mentioned photovoltaic module includes multiple perovskite solar cells, and the multiple perovskite solar cells are connected in series or in parallel to form a battery cell.

[0149] In some embodiments, the photovoltaic module further includes a photovoltaic glass layer, a bonding layer, and a back sheet.

[0150] Adhesive layers are provided on both surfaces of the cell, a back plate is provided on the surface of one of the adhesive layers away from the cell, and a photovoltaic glass layer is provided on the surface of the other adhesive layer away from the cell.

[0151] The photovoltaic glass layer and back panel are used to protect the perovskite solar cells, and have the functions of sealing, insulation and waterproofing; the bonding layer plays the role of bonding the photovoltaic glass layer and the battery cell, and bonding the back panel and the battery cell.

[0152] Optionally, the photovoltaic glass layer is made of tempered glass, the back panel is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).

[0153] Furthermore, the photovoltaic module also includes a junction box and an outer frame.

[0154] The junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.

[0155] The outer frame can support and protect the entire photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0156] Furthermore, silicone is used to bond and seal the connection between the frame and other parts of the photovoltaic module. Photovoltaic modules can convert solar energy into electrical energy, which can be stored in batteries or used to drive loads.

[0157] In some embodiments, the photovoltaic component is a perovskite solar panel.

[0158] One embodiment of the present application further provides a photovoltaic system, comprising the above-mentioned photovoltaic module.

[0159] The photovoltaic system utilizes the photovoltaic effect of the perovskite solar cells in the above photovoltaic modules to directly convert solar radiation energy into electrical energy with high efficiency; further, the above photovoltaic system is a photovoltaic power generation system.

[0160] Photovoltaic modules are the core part of photovoltaic power generation systems. The above photovoltaic system includes one or more photovoltaic modules, which can be selected according to the specific application scenario; further, when the above photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.

[0161] The above photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0162] An independent photovoltaic power generation system consists of a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), and a load. Its operating principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, then converted by the power electronic converter to power the load. Meanwhile, excess electrical energy is stored as chemical energy in an energy storage device after passing through the charge controller. In this way, when sunlight is insufficient, the energy stored in the battery can be converted into 220V, 50Hz AC electricity after passing through the power electronic inverter, filtering, and power frequency transformer to supply the AC load.

[0163] A grid-connected photovoltaic power generation system consists of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its operating principle is that solar radiation energy is converted by the photovoltaic array, then converted to high-voltage DC through high-frequency DC conversion. This is then inverted by a power electronic inverter and output to the grid as a sinusoidal AC current with a frequency consistent with the grid voltage.

[0164] The above two photovoltaic power generation systems have their own characteristics and can be selected according to specific application scenarios.

[0165] One embodiment of the present application provides an electrical device, comprising the above-mentioned perovskite solar cell or the above-mentioned photovoltaic module.

[0166] In some embodiments, the perovskite solar cell or photovoltaic module can be used as a power source for an electrical device or as an energy storage unit for an electrical device.

[0167] Furthermore, the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, etc., electric vehicles, electric trains, ships and satellites, but are not limited thereto.

[0168] Figure 4 shows an example of an electric device 2. The electric device 2 is a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.

[0169] In order to make the technical problems, technical solutions and beneficial effects solved by this application clearer, the application will be further described in detail below with reference to the embodiments and drawings. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0170] If no specific techniques or conditions are specified in the examples, the experiments were carried out according to the techniques or conditions described in the literature in the field or according to the product instructions. All reagents or instruments used without specifying the manufacturer are commercially available conventional products.

[0171] Example 1

[0172] 1) Take FTO conductive glass with a specification of 2.0*2.0 cm.

[0173] 2) Ultrasonic cleaning of FTO conductive glass was performed with water, acetone, and isopropyl alcohol in sequence.

[0174] 3) The FTO conductive glass was blown dry with a nitrogen gun to remove the solvent and then placed in a UV ozone machine for further cleaning.

[0175] 4) Hole transport layer: A 10 mg / mL aqueous solution of nickel oxide nanoparticles was spin-coated on the UV-ozone treated FTO substrate at a rate of 4000 rpm, and then annealed on a hot plate at 100° C. for 30 minutes to form a hole transport layer.

[0176] 5) Perovskite light absorption layer: Weigh 600 mg of lead iodide (PbI2), 158 mg of iodomethane (FAI), 5 mg of methylamine chloride (MACl), and 23.4 mg of cesium iodide (CsI) and dissolve them in a mixed solution of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) (volume ratio V / V = 1:4), stir for 3 hours, and filter with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution.

[0177] The perovskite precursor solution was spin-coated on the hole transport layer obtained in step 4) at a speed of 3000 rpm, annealed at 100°C for 30 minutes, and cooled to room temperature to form a perovskite light absorption layer. The perovskite material of the perovskite light absorption layer is a CsFA system, and its chemical formula is Cs 0.09 FA 0.91 PbI3. It should be noted that in this embodiment, the amount of MACl added is small and does not participate in crystallization. Its function is to regulate crystallization. The morphology of the perovskite light absorbing layer is shown in Figure 1, which is granular with an average particle size of 800nm ​​and a thickness of 500nm.

[0178] 6) Interface passivation layer:

[0179] (1) In a clean, dry, 100 mL single-necked round-bottom flask, add 1 g of cesium carbonate to 15 mL of octadecene and 3 g of 11-aminoundecanoic acid. Vacuum the flask for 10 minutes, then fill it with nitrogen. Vacuum and deflate the flask twice again. Insert a nitrogen balloon into the flask and stir for 1 hour until the solution becomes clear and transparent. This is the cesium source.

[0180] (2) In another clean, dry round-bottom flask, add 0.5 g of lead iodide to 20 mL of octadecene. Deflate the mixture three times, insert a nitrogen balloon, raise the temperature to 120°C, and stir for 1 hour. Dissolve 2 g of 11-aminoundecanoic acid in 2 mL of octadecene and add this to the round-bottom flask. Add 3 mL of trioctylphosphine and raise the temperature to 170°C to obtain a lead source.

[0181] (3) The cesium source was injected into the lead source (the mixing ratio of the cesium source and the lead source was based on the stoichiometric ratio of cesium and lead atoms being 1:1), and the mixture was reacted at 210°C for 30 seconds. The mixture was then immediately transferred to an ice-water bath and cooled to room temperature. The mixture was diluted with toluene as a solvent, and then n-hexane was added as a precipitant for extraction. The mixture was centrifuged at 5000 rpm for 10 minutes, and the supernatant was retained to obtain a quantum dot precursor solution.

[0182] (4) Dilute the precursor solution and n-hexane in a volume ratio of 1:10 to obtain a perovskite quantum dot material dispersion.

[0183] (5) The perovskite quantum dot material dispersion is spin-coated on the perovskite light absorption layer at a speed of 3000 rpm, and an interface passivation layer containing the perovskite quantum dot material is obtained by vacuuming or annealing. The perovskite quantum dot material includes a perovskite quantum dot central site (CsPbI3) and an organic ligand (11-aminoundecanoic acid) coordinated with the perovskite quantum dot central site (CsPbI3). The transmission electron microscope image thereof is shown in FIG2. The average particle size of the perovskite quantum dot material is 5 nm to 15 nm. The thickness of the interface passivation layer is 2 nm.

[0184] 7) Electron Transport Layer: PCBM ([6,6]-phenyl C61 butyric acid methyl ester) was spin-coated on the interfacial passivation layer at 1500 rpm and annealed at 100°C for 10 min to form an electron transport layer. Subsequently, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) was spin-coated on the electron transport layer at 5000 rpm to form an electron transport passivation layer.

[0185] 8) The stacked device obtained in step 7) is placed in an evaporation machine, and a metal electrode Ag is evaporated on the surface of the electron transport passivation layer to obtain a battery device.

[0186] Examples 2 to 15 and Comparative Example 1

[0187] The process is basically the same as Example 1, except that in step 6), the organic ligand (11-aminoundecanoic acid) in Example 1 is replaced by other organic ligands in equal amounts, as shown in Table 1.

[0188] Comparative Example 2

[0189] The process is basically the same as Example 1, except that no interface passivation is performed in step 6). That is, step 7) is performed directly on the perovskite light absorption layer, and the other steps are the same.

[0190] 2. Performance Testing

[0191] The obtained battery was stored away from light.

[0192] The IV test steps are as follows: The test of perovskite solar cells (IV test) uses a solar simulator of Guangyan, which complies with the national standard IEC61215. The intensity of light is calibrated to one sun intensity (AM 1.5G, 100mW / cm 2), the battery is connected to a digital source meter, and an IV curve is obtained under light to obtain the photoelectric conversion efficiency of the perovskite solar cells prepared in the above embodiments and comparative examples.

[0193] According to the IV curve and the data fed back by the test equipment, the short-circuit current Jsc (unit: mA / cm 2 ), open-circuit voltage Voc (V), maximum optical output current Jmpp (mA), and maximum optical output voltage Vmpp (V). The cell's fill factor (FF) (in %) is calculated using the formula FF = Jsc × Voc / (Jmpp × Vmpp). The cell's photoelectric conversion efficiency (PCE) (in %) is calculated using the formula PCE = Jsc × Voc × FF / Pw, where Pw represents the input power (in mW).

[0194] The photoelectric conversion efficiency PCE results are shown in Table 1:

[0195] The third-day efficiency refers to the photoelectric conversion efficiency obtained by testing on the third day of storage, which is used as the initial efficiency.

[0196] The 30-day efficiency refers to the photoelectric conversion efficiency obtained by testing on the 30th day of storage, which is used as an evaluation standard for long-term stability.

[0197] Table 1

[0198] As shown in Table 1, the PCEs of the perovskite solar cells prepared in Comparative Examples 1 and 2 on day 3 are significantly lower than those in the Examples, and the PCEs of the perovskite solar cells prepared in Comparative Examples 1 and 2 on day 30 are significantly lower than those in the Examples. This indicates that the photoelectric conversion efficiency of the perovskite solar cells prepared in the Examples of the present invention is significantly improved.

[0199] The PCE of the perovskite solar cells prepared in Comparative Examples 1 to 2 attenuates more on the 30th day than the PCE on the 3rd day. The reason for this is that the passivation effect of the interface passivation layer is poor or the interface passivation layer is not contained. The presence of defects such as water, oxygen, and ion migration causes the battery performance to decrease significantly over time. The PCE of the perovskite solar cells prepared in each embodiment not only did not decay but improved compared to the PCE on the 3rd day. The analysis suggests that due to the presence of the interface passivation layer, the battery performance is less affected by defects such as water, oxygen, and ion migration, resulting in very little attenuation of battery performance. At the same time, the self-repairing effect of the perovskite solar cell in the process of photoelectric generation is greater than the attenuation. Therefore, the PCE on the 30th day not only did not decay, but improved. This also shows that the battery stability of the perovskite solar cells prepared in each embodiment of the present invention is significantly improved.

[0200] It should be noted that the present application is not limited to the above-mentioned embodiments. The above-mentioned embodiments are merely examples, and any embodiments having substantially the same structure and effect as the technical concept within the scope of the present application are all included in the technical scope of the present application. In addition, without departing from the scope of the present application, any other embodiments that can be conceived by those skilled in the art and that combine some of the constituent elements in the embodiments are also included in the scope of the present application.

Claims

1. A perovskite solar cell, characterized in that: It includes a first electrode layer, a perovskite light absorbing layer and a second electrode layer which are stacked; the perovskite solar cell also includes an interface passivation layer, which is arranged on at least one surface of the perovskite light absorbing layer, and the interface passivation layer includes a perovskite quantum dot material, the perovskite quantum dot material includes a perovskite quantum dot central site and an organic ligand coordinated and bound to the perovskite quantum dot central site, and the organic ligand contains both a nitrogen-containing basic group and an organic acid functional group.

2. The perovskite solar cell according to claim 1, characterized in that The organic ligand satisfies at least one of the following conditions: (1) The nitrogen-containing basic group is R1, and R1 includes -N(R3)2, -NHR4, -NH2 and -N(R5)3 + At least one of; wherein R3, R4 and R5 each independently include a C1-C12 alkyl group; optionally, R3, R4 and R5 each independently include a C2-C8 alkyl group; (2) The organic acid functional group is R2, and R2 includes at least one of a carboxylic acid group, a sulfonic acid group, a sulfinic acid group, a thiol group, a phosphonic acid group and a phosphinic acid group.

3. The perovskite solar cell according to claim 2, characterized in that: The general formula of the organic ligand is R1-R-R2; R is a C1-C30 hydrocarbon group and an aryl group, or a combination of both; Optionally, R is a combination of a C1-C30 hydrocarbon group and an aryl group, or is a C1-C30 hydrocarbon group; More optionally, R is a combination of a C10-C20 hydrocarbon group and an aryl group, or is a C10-C20 hydrocarbon group; More preferably, the aryl group is one or a combination of phenyl and naphthyl.

4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that: The organic ligand includes at least one of 15-aminopentadecanoic acid, 3-(3-aminomethyl)phenylpropionic acid monohydrate, 13-aminotridecanoic acid, 12-aminododecanoic acid, 11-aminoundecanoic acid, 10-aminodecanoic acid, 8-aminooctanoic acid, 7-aminoheptanoic acid, 6-aminohexanoic acid, 5-aminopentanoic acid, 4-aminopentanoic acid, γ-aminobutyric acid, glycine, 12-amino-1-dodecanesulfonic acid, 11amino-1-undecanesulfonic acid, 10-amino-1-decanesulfonic acid, 6-aminohexane-1-sulfonic acid, 5-aminopentane-1-sulfonic acid, 3-(cyclohexylamine)-1-propanesulfonic acid, 6-amino-2-naphthoic acid, p-aminobenzoic acid, 3-(N,N-dimethyldodecylammonium)propanesulfonate, 4-dimethylamino-1-butanethiol and aminosulfonic acid.

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The general formula of the perovskite material in the perovskite light absorption layer and the central site of the perovskite quantum dot are independently ABX3 or A2CDX6; the A ion is a monovalent cation, the B ion is a divalent metal cation, the C ion is a monovalent metal cation, the D ion is a trivalent metal cation, and the X ion is a monovalent anion; Optionally, the A ion includes at least one of an organic cation and a metal cation; more optionally, the organic cation includes at least one of an organic amine ion, a carboxamidine group and an imidazole group; more optionally, the metal cation includes Li + 、Na + , K + , Rb + and Cs + At least one of; Optionally, the B ions include Pb 2+ Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ 、Zn 2+ ,Ge 2+ , Fe 2+ 、Co 2+ , Cu 2+ and Ni 2+ More preferably, the B ions include Pb 2+ and Sn 2+ One or both of the following: Optionally, the C ions include Cs + 、Ag + , K + And Ru + At least one of; Optionally, the D ions include Bi 3+ 、Ni 3+ , Fe 3+ and Cu 3+ At least one of; Optionally, the X ions include F - , Cl - Br - and I - More preferably, the X ions include Cl - Br - and I - At least one of .

6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that: The thickness of the interface passivation layer is 0.5 nm to 50 nm.

7. The perovskite solar cell according to any one of claims 1 to 6, characterized in that: The average particle size of the perovskite quantum dot material is 0.5 nm to 30 nm, and can be optionally 5 nm to 15 nm.

8. The perovskite solar cell according to any one of claims 1 to 7, characterized in that: The fluorescence emission peak of the perovskite quantum dot material is 200nm to 800nm, and the band gap energy of the perovskite quantum dot material is 1.55eV to 6.2eV.

9. The perovskite solar cell according to any one of claims 1 to 8, characterized in that: The thickness of the perovskite light absorbing layer is 300nm to 1000nm.

10. The perovskite solar cell according to any one of claims 1 to 9, characterized in that: The average particle size of the perovskite material in the perovskite light absorbing layer is 0.1 μm to 1 μm.

11. A method for preparing a perovskite solar cell according to any one of claims 1 to 10, characterized in that: The steps include: (1) preparing a first electrode layer; (2) preparing a perovskite light absorbing layer; and (3) preparing a second electrode layer; Wherein between step (1) and step (2), and / or between step (2) and step (3), step (I) is performed: preparing the interface passivation layer.

12. The preparation method according to claim 11, characterized in that: The step (I) comprises: Step (i) preparing a dispersion of the perovskite quantum dot material; Step (ii) coating the dispersion of the perovskite quantum dot material to prepare the interface passivation layer.

13. The preparation method according to any one of claims 11 to 12, characterized in that: The perovskite solar cell is the perovskite solar cell according to claim 5; the step (i) comprises the following steps (a) to (d): (a) mixing a first solvent and a material containing A in an inert atmosphere to prepare a first solution; (b) mixing a second solvent and BX2 in an inert atmosphere to obtain a second solution; the organic ligand is added in at least one of steps (a) and (b); (c) mixing the first solution and the second solution, reacting them at 120-250° C., and then cooling them in an ice bath to obtain a third solution; (d) extracting and separating the third solution with an organic solvent, retaining the supernatant, and obtaining a dispersion of the perovskite quantum dot material.

14. A photovoltaic module, characterized in that: A perovskite solar cell comprising the following claim 1 .

15. A photovoltaic system, characterized in that: Comprising the photovoltaic module as claimed in claim 14.

16. An electrical device, characterized in that: The method comprises at least one selected from the perovskite solar cell according to any one of claims 1 to 12 and the photovoltaic module according to claim 14.

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