Light-emitting display device

Abstract

A light emitting display device includes: a display panel including a display area and a component area surrounded by the display area and including a plurality of optical sensor areas; and an optical element on the rear surface of the component region. The display area includes: a pixel defining layer defining an opening overlapping the anode in a plan view; a cathode covering the pixel defining layer; an encapsulation layer on the top of the cathode; and a color filter on the encapsulation layer and overlapping the opening of the pixel defining layer in a plan view. The color filter and the pixel defining layer each have an additional opening corresponding to the optical sensor region, and in a plan view, an area of the additional opening of the color filter is smaller than an area of the additional opening of the pixel defining layer such that in the optical sensor region, a portion of the pixel defining layer is shielded by the color filter in the plan view.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2023-0145950, filed on October 27, 2023, and all benefits derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] The present disclosure relates to a light-emitting display device having a sensor on a rear surface of a display area. Background Art

[0003] The display device is a device that displays a picture, and includes a liquid crystal display (LCD) and an organic light emitting diode (OLED) display.

[0004] These display devices are used in various electronic devices such as mobile phones, navigation devices, digital cameras, electronic books, portable game consoles, and other terminals.

[0005] A display device such as an organic light emitting display device may have a structure that may be bent or folded using a flexible substrate.

[0006] In addition, in small electronic devices such as mobile phones, optical elements such as cameras and optical sensors are formed in a bezel area around a display area. However, as the size of display screens increases, the size of the area surrounding the display area is gradually decreasing, and camera technology that allows optical sensors to be located on the rear surface of the display area is being developed. Summary of the invention

[0007] Embodiments are directed to preventing a component area located in front of a sensor in a light-emitting display device from being visible when external light is reflected.

[0008] Embodiments are directed to ensuring that a component area located in front of a sensor in a light-emitting display device is not identified as distinct from the surrounding display area.

[0009] According to an embodiment, a light-emitting display device includes: a display panel including a display area and a component area, wherein the component area is surrounded by the display area and includes a plurality of optical sensor areas; and an optical element located on the rear surface of the component area. The display area includes: a pixel defining layer defining an opening overlapping with the anode in a plan view; a cathode covering the pixel defining layer; an encapsulation layer located on top of the cathode; and a color filter located on the encapsulation layer and overlapping with the opening of the pixel defining layer in a plan view, wherein the color filter and the pixel defining layer each extend to the component area and each define therein an additional opening corresponding to each of the plurality of optical sensor areas, and in a plan view, the area of ​​the additional opening of the color filter is smaller than the area of ​​the additional opening of the pixel defining layer, so that in each optical sensor area, a portion of the pixel defining layer is shielded by the color filter in a plan view.

[0010] In a plan view, a portion of the cathode electrode located on the inclined surface of the pixel defining layer in each optical sensor region may be shielded by a color filter.

[0011] A gap between the additional opening of the pixel defining layer and the additional opening of the color filter may be equal to or greater than 1 micrometer (μm) and equal to or less than 2 μm.

[0012] The pixel defining layer may be a black pixel defining layer, and the light blocking layer may not be disposed on top of the black pixel defining layer.

[0013] The color filter may include a red filter and a blue filter, each of the red filter and the blue filter may define an additional opening therein, and in a plan view, the area of ​​the additional opening of the lower filter among the red filter and the blue filter may be smaller than the area of ​​the additional opening of the upper filter among the red filter and the blue filter.

[0014] The color filters may include red and blue filters, and the red and blue filters may each define an additional opening therein, and an upper filter among the red and blue filters may cover a side of a lower filter among the red and blue filters.

[0015] In a plan view, an area of ​​the additional opening of the upper color filter among the red color filter and the blue color filter may be smaller than an area of ​​the additional opening of the lower color filter among the red color filter and the blue color filter.

[0016] The color filter may include a red filter, a green filter, and a blue filter, wherein the red filter, the green filter, and the blue filter each define an additional opening therein, the area of ​​the additional opening of the lowermost filter among the red filter, the green filter, and the blue filter may be the smallest, and the area of ​​the additional opening of the uppermost filter among the red filter, the green filter, and the blue filter may be the largest.

[0017] The color filter may include a red filter, a green filter, and a blue filter, wherein the red filter, the green filter, and the blue filter may each define an additional opening therein, and in a plan view, at least two of the additional openings of the red filter, the additional openings of the green filter, and the additional openings of the blue filter may have shapes different from each other.

[0018] The component area may be divided into a plurality of component areas, and a component area disposed close to the display area may have an optical sensor area having a smaller density or size than a component area disposed relatively far from the display area.

[0019] The component area can have a 1-1 component area, a 1-2 component area and a 1-3 component area, the 1-3 component area can be set closest to the display area, the 1-1 component area can be set farthest from the display area, and among the density or size of the optical sensor area of ​​the 1-1 component area, the density or size of the optical sensor area of ​​the 1-2 component area, and the density or size of the optical sensor area of ​​the 1-3 component area, the density or size of the optical sensor area of ​​the 1-1 component area can be the largest, the density or size of the optical sensor area of ​​the 1-2 component area can be an intermediate value, and the density or size of the optical sensor area of ​​the 1-3 component area can be the smallest.

[0020] A buffer area may be located between the component area and the display area.

[0021] According to one embodiment, a light-emitting display device includes: a display panel including a display area and a component area, wherein the component area is surrounded by the display area and includes a plurality of optical sensor areas; and an optical component located on a rear surface of the component area. The display area includes: a pixel defining layer defining an opening overlapping with an anode in a plan view; a cathode covering the pixel defining layer; an encapsulation layer located on top of the cathode; and a light blocking layer located above the encapsulation layer and having an opening overlapping with the opening of the pixel defining layer in a plan view, wherein the light blocking layer and the pixel defining layer each extend to the component area and each define therein an additional opening corresponding to each of the plurality of optical sensor areas, and in a plan view, the area of ​​the additional opening of the light blocking layer is smaller than the area of ​​the additional opening of the pixel defining layer, so that in each optical sensor area, a portion of the pixel defining layer is shielded by the light blocking layer in a plan view.

[0022] In a plan view, a portion of the cathode electrode located on the inclined surface of the pixel defining layer in each optical sensor region may be shielded by the light blocking layer.

[0023] A gap between the additional opening of the pixel defining layer and the additional opening of the light blocking layer may be equal to or greater than 1 μm and equal to or less than 2 μm.

[0024] The display area may further include a plurality of color filters located in the openings of the light blocking layer.

[0025] The color filter may not be located in the optical sensor area.

[0026] The component area may be divided into a plurality of component areas, and a component area disposed close to the display area may have an optical sensor area having a smaller density or size than a component area disposed relatively far from the display area.

[0027] The component area can have a 1-1 component area, a 1-2 component area and a 1-3 component area, the 1-3 component area can be set closest to the display area, the 1-1 component area can be set farthest from the display area, and among the density or size of the optical sensor area of ​​the 1-1 component area, the density or size of the optical sensor area of ​​the 1-2 component area, and the density or size of the optical sensor area of ​​the 1-3 component area, the density or size of the optical sensor area of ​​the 1-1 component area can be the largest, the density or size of the optical sensor area of ​​the 1-2 component area can be an intermediate value, and the density or size of the optical sensor area of ​​the 1-3 component area can be the smallest.

[0028] A buffer area may be located between the component area and the display area.

[0029] According to an embodiment, a plurality of first optical sensor areas through which light can pass are located in the first component area, and in the first optical sensor area, in a plan view, an area of ​​an opening of the light blocking layer located on the top or an area of ​​an opening of the color filter located on the top is smaller than an area of ​​an opening of the black pixel defining layer located therebelow, so external light is not reflected from the cathode located above the black pixel defining layer, and thus the first optical sensor area may not be visible.

[0030] According to an embodiment, a plurality of first optical sensor areas through which light may pass are located in the first component area EA1, and the density of the first optical sensor areas is adjusted so that a boundary with the display area DA is not easily visible.

[0031] According to an embodiment, the buffer area is placed between the first component area and the display area so that a boundary between the display area and the first component area is not easily visible. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic perspective view showing a use state of the light emitting display device according to the embodiment.

[0033] Figure 2 is an exploded perspective view of a light emitting display device according to an embodiment.

[0034] Figure 3 is a block diagram of a light emitting display device according to an embodiment.

[0035] Figure 4 is a perspective view schematically showing a light emitting display device according to another embodiment.

[0036] Figure 5 is an enlarged plan view of a partial region of a light emitting display device according to an embodiment.

[0037] Figures 6 to 9 is a diagram specifically illustrating a structure of each layer according to a manufacturing order in a part of a pixel circuit unit of a lower panel layer of a display panel according to an embodiment.

[0038] Fig.10 is a cross-sectional view of a display panel of a light emitting display device according to an embodiment.

[0039] Fig.11 is a plan view of a first optical sensor region of a first component region according to an embodiment.

[0040] Fig.12 yes Fig.11 A cross-sectional view of a first optical sensor area of ​​a first component area.

[0041] Fig.13is a plan view of a first optical sensor region of a first component region according to a comparative example.

[0042] Fig.14 yes Fig.13 A cross-sectional view of a first optical sensor area of ​​a first component area.

[0043] Fig.15A is a cross-sectional view of a display panel of a light emitting display device according to another embodiment.

[0044] Fig. 15B as well as Figures 16 to 19 is a cross-sectional view of a first optical sensor region of a first component region according to other embodiments.

[0045] Fig. 20 is a graph showing transmittance according to wavelength of a color filter.

[0046] Fig.21 is a plan view of a first optical sensor region of a first component region according to another embodiment.

[0047] Figure 22 to Figure 24 is a schematic plan view of a first component region according to an embodiment.

[0048] Fig.25 and Fig.26 is a plan view of a first component region according to an embodiment.

[0049] Fig. 27 is a plan view of a first component region according to another embodiment.

[0050] Fig.28 is a table classifying structures of the first component region according to the embodiments.

[0051] Fig.29 is a schematic plan view of a first component region and its surrounding area according to another embodiment.

[0052] Fig.30 yes Fig.29 Schematic cross-sectional view of a first component region and its surrounding area.

[0053] Fig.31 and Fig.32 is a photograph of a first component area according to an embodiment.

[0054] Fig.33 is a cross-sectional view of a display panel of a light emitting display device according to another embodiment.

[0055] Fig.34 is a cross-sectional view of a display panel of a light-emitting display device according to still another embodiment.

[0056] <Description of the symbol>

[0057] 1000: Display device DP: Display panel

[0058] DA, DA1-1, DA1-2: Display area EA: Component area

[0059] EA1, EA1-1, EA1-2, EA1-3: First component area

[0060] EA2: Second component area ES, ES1, ES2: Optical elements

[0061] OPS: Auxiliary optical sensor area OPS1: First optical sensor area

[0062] OPS2: Second Optical Sensor Area BUA: Buffer Area

[0063] 380: Black pixel limiting layer

[0064] OP: Opening of the black pixel defining layer

[0065] OP-1: Additional openings in the black pixel defining layer

[0066] 220: light blocking layer OPBM: opening of light blocking layer

[0067] OPBM-1: Additional opening for light blocking layer

[0068] 230, 230R, 230G, 230B: Color filter

[0069] OPR, OPG, OPB: Color filter opening

[0070] OPCF-1, OPR-1, OPG-1, OPB-1: Additional opening for color filter

[0071] 110: substrate 171: data line

[0072] 180, 181, 182, 183: organic layer OP1, OP2, OP3, OP4: opening

[0073] 385: spacer 400: encapsulation layer

[0074] Anode: Anode Cathode: Cathode

[0075] EML: Light-emitting layer FL: Functional layer

[0076] T1, T2, T3, T4, T5, T6, T7: transistors

[0077] Cst: Storage capacitor C boost: Boost capacitor

[0078] FA: Folding area FAX: Folding axis DETAILED DESCRIPTION

[0079] Hereinafter, various embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

[0080] The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

[0081] In order to clearly explain the present invention, parts irrelevant to the description are omitted, and the same or similar components are assigned the same reference numerals throughout the specification.

[0082] In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown.

[0083] In the drawings, the thickness is exaggerated to clearly indicate various layers and regions.

[0084] Also, in the drawings, the thicknesses of some layers and regions are exaggerated for convenience of explanation.

[0085] The terms used in this article are only used for the purpose of describing specific embodiments and are not intended to be restrictive. As used in this article, "one", "the (said)" and "at least one" do not represent quantitative limitations, and are intended to include both the singular and the plural, unless the context clearly indicates otherwise. For example, "element" has the same meaning as "at least one element", unless the context clearly indicates otherwise. "At least one" should not be interpreted as being limited to "one". "Or" means "and / or". As used in this article, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0086] In addition, when an element such as a layer, film, region, panel, or component is referred to as being “on” or “over” another element, it not only means when the element is “directly on” the other element, but also means when intervening elements are present between the element and the other element.

[0087] In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0088] In addition, “above” or “on” a reference element means above or below the reference element, and does not necessarily mean located “above” or “on” the reference element in an opposite direction of gravity.

[0089] In addition, throughout the specification, when an element is referred to as “comprising” a certain component, it means that the element may further include other components without excluding the other components, unless there is a specific description contrary to the above.

[0090] In addition, throughout the specification, when reference is made to "in a plan view", this means viewing the target portion from above (viewed in a third direction), and when reference is made to "in a cross-sectional view", this means when the cross section of the target portion is cut vertically from the side and observed.

[0091] In addition, throughout the specification, when "connected" is used, this means not only when two or more components are directly connected, but also when two or more components are indirectly connected through other components, they are physically connected. This includes not only the case of being connected or electrically connected, but also the case where each part referred to by different names depending on the position or function is substantially connected to each other.

[0092] In addition, throughout the specification, when a portion such as a wiring, layer, area, board or component is referred to as "extending in a first direction or a second direction", this not only indicates a straight line shape extending in that direction, but also indicates a structure extending along the first direction or the second direction as a whole, and a structure that is bent at some parts, has a zigzag structure or extends in an arc structure.

[0093] In addition, electronic devices (e.g., mobile phones, TVs, monitors, laptop computers, etc.) that include the light-emitting display devices, display panels, etc. described in this specification or the light-emitting display devices, display panels, etc. manufactured by the manufacturing methods described in this specification are not excluded from the scope of the rights in this document.

[0094] The following will be Figures 1 to 3 A schematic structure of a light emitting display device is explained.

[0095] Figure 1 is a schematic perspective view showing a use state of the light emitting display device according to the embodiment, Figure 2 is an exploded perspective view of a light emitting display device according to an embodiment, and Figure 3 is a block diagram of a light emitting display device according to an embodiment.

[0096] refer to Figure 1 The light-emitting display device 1000 according to the embodiment is a device that displays moving images or still images, and can be used in portable electronic devices such as mobile phones, smart phones, tablet personal computers, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), laptop computers, navigation devices, and ultra mobile personal computers (UMPCs), as well as televisions, monitors, billboards, and Internet of Things (IOT) devices.

[0097] In addition, the light-emitting display device 1000 according to the embodiment may be used for wearable devices such as a smart watch, a watch phone, a glasses type display, and a head mounted display (HMD).

[0098] In addition, according to one embodiment, the light-emitting display device 1000 includes a dashboard of a car, a central information display (CID) placed on the central instrument panel or dashboard of the car, an interior mirror display replacing the side-view mirror of the car, or a display placed on the back of the front seats to serve as an entertainment facility for the rear seats of the car.

[0099] For ease of explanation, Figure 1 The light-emitting display device 1000 is shown being used as a smart phone.

[0100] The light emitting display device 1000 may display an image in the third direction DR3 on a display surface parallel to each of the first direction DR1 and the second direction DR2.

[0101] The display surface on which an image is displayed may correspond to the front surface of the light-emitting display device 1000 and the front surface of the cover window WU.

[0102] Images can include static images as well as dynamic images.

[0103] In this embodiment, the front (or top) surface and the rear (or bottom) surface of each member are defined based on the direction in which an image is displayed.

[0104] The front surface and the rear surface are opposite to each other in the third direction DR3, and a normal direction of each of the front surface and the rear surface may be parallel to the third direction DR3.

[0105] The separation distance between the front surface and the rear surface in the third direction DR3 may correspond to the thickness of the display panel DP in the third direction DR3. That is, the third direction DR3 is the thickness direction of the display panel DP.

[0106] The light-emitting display device 1000 according to one embodiment may detect a user's input applied from the outside (refer to Figure 1 hand in the middle).

[0107] The user's input may include various types of external inputs such as a part of the user's body, light, heat, or pressure.

[0108] In one embodiment, the user's input is shown as the user's hand applied to the front surface.

[0109] However, the present invention is not limited thereto.

[0110] The user's input may be provided in various forms, and depending on the structure of the light-emitting display device 1000 , the light-emitting display device 1000 may also detect the user's input applied to the side or back of the light-emitting display device 1000 .

[0111] refer to Figure 1 and Figure 2 , the light-emitting display device 1000 may include a cover window WU, a housing HM, a display panel DP, and an optical element ES.

[0112] In one embodiment, the cover window WU and the housing HM may be combined to configure the appearance of the light-emitting display device 1000 .

[0113] The cover window WU may include an insulating panel.

[0114] For example, the cover window WU may be made of glass, plastic, or a combination thereof.

[0115] The front surface of the cover window WU may define the front surface of the light-emitting display device 1000 .

[0116] The transmission area TA may be an optically transparent area.

[0117] For example, the transmission area TA may be an area having a visible light transmittance of about 90% or more.

[0118] The blocking area BA may define the shape of the transmission area TA.

[0119] The blocking area BA is adjacent to the transmission area TA and may surround the transmission area TA.

[0120] The blocking area BA may be an area having relatively low transmittance compared with the transmission area TA.

[0121] The blocking area BA may include an opaque material that blocks light.

[0122] The barrier area BA may have a predetermined color.

[0123] The blocking area BA may be defined by a bezel layer provided separately from the transparent substrate defining the transmission area TA, or may be defined by an ink layer formed by inserting into or coloring the transparent substrate.

[0124] The display panel DP may display an image, and may include a driver 50 .

[0125] The display panel DP may include a front surface including a display area DA and a non-display area PA.

[0126] The display area DA may be an area where pixels operate according to electrical signals and emit light.

[0127] In one embodiment, the display area DA is an area displaying an image including pixels, and at the same time, the display area DA may be an area sensing an external input by having a touch sensor located above the pixels in the third direction DR3.

[0128] The transmission area TA of the cover window WU may at least partially overlap the display area DA of the display panel DP.

[0129] For example, the transmission area TA may overlap the entire surface of the display area DA, or may overlap at least a portion of the display area DA.

[0130] Accordingly, the user may view an image through the transmissive area TA or may provide an external input based on the image.

[0131] However, the present invention is not limited thereto.

[0132] For example, within the display area DA, an area where an image is displayed and an area where an external input is detected may be separated from each other.

[0133] The non-display area PA of the display panel DP may at least partially overlap the blocking area BA of the cover window WU.

[0134] The non-display area PA may be an area covered by the blocking area BA.

[0135] The non-display area PA is adjacent to the display area DA and may surround the display area DA.

[0136] An image is not displayed in the non-display area PA, and a driving circuit or a driving wiring may be provided to drive the display area DA.

[0137] The non-display area PA may include a first peripheral area PA1 located outside the display area DA and a second peripheral area PA2 including the driver 50 , the connection line, and the bending area.

[0138] exist Figure 2 In the embodiment of FIG. 5 , the first peripheral area PA1 is located on three sides of the display area DA, and the second peripheral area PA2 is located on the remaining side of the display area DA.

[0139] In one embodiment, the display panel DP may be assembled in a flat state in which the display area DA and the non-display area PA face the cover window WU.

[0140] However, the present invention is not limited thereto.

[0141] A portion of the non-display area PA of the display panel DP may be arc-shaped.

[0142] At this time, a portion of the non-display area PA is directed toward the rear of the light-emitting display device 1000, so that the blocking area BA visible at the front of the light-emitting display device 1000 can be reduced, and Figure 2 In the embodiment, the second peripheral area PA2 may be bent and placed on the rear side of the display area DA and then assembled.

[0143] In addition, the display panel DP may include a component area EA, and specifically, the display panel DP may include a first component area EA1 and a second component area EA2.

[0144] The first and second component areas EA1 and EA2 may be at least partially surrounded by the display area DA.

[0145] The first component area EA1 and the second component area EA2 are illustrated as being spaced apart from each other, but are not limited thereto and may be at least partially connected.

[0146] The first component area EA1 and the second component area EA2 may be areas under which components using infrared light, visible light, or sound are placed.

[0147] The display area DA is formed with a plurality of light emitting diodes and a plurality of pixel circuit units that generate and transmit a light emitting current to each of the plurality of light emitting diodes.

[0148] Here, one light emitting diode and one pixel circuit unit are referred to as a pixel PX.

[0149] In the display area DA, one pixel circuit unit and one light emitting diode are formed in a one-to-one arrangement.

[0150] The first component area EA1 includes an area composed of a transparent layer through which light can pass and without a conductive layer or a semiconductor layer located thereon, a pixel defining layer including a light blocking material, a light blocking layer, etc. is included in the first component area EA1, and by including an opening overlapping with a position corresponding to the first component area EA1, a structure that does not block light can be provided.

[0151] The second component area EA2 may include a transparent portion through which light and / or sound may pass, and a display unit including a plurality of pixels PX.

[0152] The transparent portion is located between adjacent pixels PX, and is composed of a transparent layer through which light and / or sound can pass.

[0153] The display unit may be formed to have a single unit structure by combining a plurality of pixels PX, and a transparent portion may be located between adjacent unit structures.

[0154] refer to Figures 1 to 3, the display panel DP may include a display area DA including pixels PX and touch sensors TS.

[0155] The display panel DP includes pixels PX that generate images and may be visible to a user from the outside through the transmissive area TA.

[0156] In addition, the touch sensor TS may be located on the top of the pixel PX and may detect an external input applied from the outside.

[0157] The touch sensor TS may detect an external input provided to the cover window WU.

[0158] Reference again Figure 2 , the second peripheral area PA2 may include a bending area.

[0159] The display area DA and the first peripheral area PA1 may have a flat state substantially parallel to a plane defined by the first and second directions DR1 and DR2, and one side of the second peripheral area PA2 may extend from the flat state, pass through the bending area, and then be in the flat state again.

[0160] As a result, at least a portion of the second peripheral area PA2 may be bent and assembled to be located at the rear side of the display area DA.

[0161] When at least a portion of the second peripheral area PA2 is bent and assembled, the at least a portion of the second peripheral area PA2 overlaps the display area DA in a plan view, and thus the blocking area BA of the light emitting display device 1000 may be reduced.

[0162] However, the present invention is not limited thereto.

[0163] For example, the second peripheral area PA2 may not be bent.

[0164] The driver 50 may be installed in the second peripheral area PA2, in the bending region, or on one side or opposite sides of the bending region.

[0165] The driver 50 may be provided in the form of a chip.

[0166] The driver 50 is electrically connected to the display area DA, and may transmit an electrical signal to the display area DA.

[0167] For example, the driver 50 may provide data signals to the pixels PX arranged in the display area DA.

[0168] Alternatively, the driver 50 may include a touch driving circuit and may be electrically connected to the touch sensors TS provided in the display area DA.

[0169] On the other hand, the driver 50 may include various circuits other than the above-mentioned circuits, or may be designed to provide various electrical signals to the display area DA.

[0170] On the other hand, the light emitting display device 1000 may have a pad portion located at the end of the second peripheral area PA2 and be electrically connected to a flexible printed circuit board (FPCB) including a driving chip through the pad portion.

[0171] Here, the driving chip located in the flexible printed circuit board may include various driving circuits for driving the light-emitting display device 1000 or a connector for power supply.

[0172] Depending on the embodiment, a rigid printed circuit board (PCB) may be used instead of a flexible printed circuit board.

[0173] The optical element ES may be disposed under the display panel DP.

[0174] The optical element ES may include a first optical element ES1 overlapping the first component area EA1 and a second optical element ES2 overlapping the second component area EA2.

[0175] The first optical element ES1 may be an electronic element using light or sound.

[0176] For example, the first optical element ES1 is a sensor such as an infrared sensor that receives and uses light, a sensor that outputs and detects light or sound to measure distance or recognize fingerprints, or a small lamp that outputs light, or the first optical element ES1 can be a speaker that outputs sound, etc.

[0177] Of course, in the case of an electronic component using light, light of various wavelength bands such as visible light, infrared light, and ultraviolet light may be used.

[0178] The second optical element ES2 may be at least one of a camera (eg, an IR camera), a dot projector, an IR illuminator, and a time-of-flight sensor.

[0179] refer to Figure 3 , the light-emitting display device 1000 may include a display panel DP, a power module PM, a first electronic module EM1 and a second electronic module EM2.

[0180] The display panel DP, the power module PM, the first electronic module EM1 and the second electronic module EM2 may be electrically connected to each other.

[0181] Figure 3 The pixels PX and the touch sensors TS located in the display area DA are shown among the configuration of the display panel DP.

[0182] The power module PM may supply power required for overall operations of the light-emitting display apparatus 1000 .

[0183] The power module PM may include a conventional battery module.

[0184] The first electronic module EM1 and the second electronic module EM2 may include various functional modules for operating the light-emitting display device 1000 .

[0185] The first electronic module EM1 may be directly mounted on the mother board electrically connected to the display panel DP, or the first electronic module EM1 may be mounted on a separate board and electrically connected to the mother board through a connector (not shown).

[0186] The first electronic module EM1 may include a control module CM, a wireless communication module TM, an image input module IIM, an audio input module AIM, a memory MM, and an external interface IF.

[0187] Some of the above-mentioned modules may not be mounted on the motherboard, but the modules may be electrically connected to the motherboard through a flexible printed circuit board connected thereto.

[0188] The control module CM may control the overall operation of the light-emitting display device 1000 .

[0189] The control module CM may be a microprocessor.

[0190] For example, the control module CM activates or deactivates the display panel DP.

[0191] The control module CM may control other modules such as the image input module IIM or the audio input module AIM based on the touch signal received from the display panel DP.

[0192] The wireless communication module TM may transmit wireless signals to other terminals or receive wireless signals from other terminals using a Bluetooth or Wi-Fi line.

[0193] The wireless communication module TM may send / receive voice signals using a general communication line.

[0194] The wireless communication module TM includes a transmitter TM1 that modulates and transmits a signal to be transmitted and a receiver TM2 that demodulates a received signal.

[0195] The image input module IIM may process a video signal, and may convert the processed video signal into video data that may be displayed on the display panel DP.

[0196] The audio input module AIM may receive an external sound signal through a microphone in a recording mode, a voice recognition mode, etc., and may convert the received external sound signal into electrical voice data.

[0197] The external interface IF may be used as an interface for connecting to an external charger, a wired / wireless data port, a card (eg, a memory card, a SIM / UIM card) slot, and the like.

[0198] The second electronic module EM2 may include an audio output module AOM, a light emitting module LM, a light receiving module LRM and a camera module CMM, at least some of which include an optical element ES, and as shown in FIG. Figure 1 and Figure 2 As shown in , the optical element ES may be located at the back of the display panel DP.

[0199] The optical element ES may include a light emitting module LM, a light receiving module LRM, and a camera module CMM.

[0200] In addition, the second electronic module EM2 may be directly mounted on the motherboard, mounted on a separate board and electrically connected to the motherboard through a connector (not shown), or connected to the first electronic module EM1.

[0201] The audio output module AOM may convert audio data received from the wireless communication module TM or audio data stored in the memory MM, and may output the converted audio data to the outside.

[0202] The light emitting module LM may generate and output light.

[0203] The light emitting module LM can output infrared light.

[0204] For example, the light emitting module LM may include an LED device.

[0205] The light receiving module LRM can detect infrared light.

[0206] When infrared light above a certain level is detected, the light receiving module LRM may be activated.

[0207] For example, the light receiving module LRM may include a CMOS sensor.

[0208] After the infrared light generated in the light emitting module LM is output, the infrared light is reflected by an external object (eg, a finger or face of a user), and the reflected infrared light may be incident on the light receiving module LRM.

[0209] The camera module CMM may capture external images.

[0210] In one embodiment, the optical element ES may additionally include a light detection sensor or a heat detection sensor.

[0211] The optical element ES may detect an external object received through the front surface, or may provide a sound signal such as voice to the outside through the front surface.

[0212] Additionally, the optical element ES may include multiple components and is not limited to any one embodiment.

[0213] Reference again Figure 2 , the housing HM can be combined with the cover window WU.

[0214] A cover window WU may be provided at the front of the housing HM.

[0215] The housing HM may be combined with the cover window WU to provide a predetermined accommodation space.

[0216] The display panel DP and the optical element ES may be accommodated in a predetermined accommodation space provided between the housing HM and the cover window WU.

[0217] The housing HM may include a material having relatively high rigidity.

[0218] For example, the housing HM may include a plurality of frames and / or plates made of glass, plastic, or metal, or a combination thereof.

[0219] The housing HM may stably protect components of the light-emitting display device 1000 accommodated in the inner space from external impact.

[0220] In the following, we will Figure 4 The structure of a light-emitting display device 1000 according to another embodiment is shown.

[0221] Figure 4 is a perspective view schematically showing a light emitting display device according to another embodiment.

[0222] Descriptions of the same components as those described above will be omitted.

[0223] Figure 4 The embodiment shows a foldable display device in which the light-emitting display device 1000 is folded by a folding axis FAX.

[0224] refer to Figure 4 In one embodiment, the light-emitting display device 1000 may be a foldable display device.

[0225] The light-emitting display device 1000 may be folded outward or inward based on a folding axis FAX.

[0226] When folded outward based on the folding axis FAX, the display surface of the light-emitting display device 1000 is located on the outer side in the third direction DR3, so that images can be displayed in two directions.

[0227] When folded inwardly based on the folding axis FAX, the display surface may not be visible from the outside.

[0228] In one embodiment, the light emitting display device 1000 may include a display area DA, an element area EA, and a non-display area PA.

[0229] The display area DA may be divided into a 1-1 display area DA1-1, a 1-2 display area DA1-2, and a folding area FA.

[0230] The 1-1 display area DA1-1 and the 1-2 display area DA1-2 may be located on the left and right sides based on (or centered around) the folding axis FAX, respectively, and the folding area FA may be located between the 1-1 display area DA1-1 and the 1-2 display area DA1-2.

[0231] At this time, when folded outward based on the folding axis FAX, the 1-1 display area DA1-1 and the 1-2 display area DA1-2 are located on opposite sides in the third direction DR3, which allows images to be displayed in both directions.

[0232] In addition, when folded inwardly based on the folding axis FAX, the 1-1 display area DA1-1 and the 1-2 display area DA1-2 may not be visible from the outside.

[0233] Figure 5 is an enlarged plan view of a partial region of a light emitting display device according to an embodiment.

[0234] Figure 5 A portion of a display panel DP of the light emitting display device according to the embodiment is shown and is illustrated using a display panel of a mobile phone.

[0235] The display panel DP has a display area DA located on the front side, and may include a component area EA located on the front side (specifically, including a first component area EA1 and a second component area EA2 ).

[0236] In addition, Figure 5 In the embodiment of the present invention, the first component area EA1 is arranged adjacent to the second component area EA2.

[0237] exist Figure 5 In the embodiment of FIG. 5 , the first component area EA1 is located on the left side of the second component area EA2 .

[0238] The location and number of first component areas EA1 may vary depending on the embodiment.

[0239] exist Figure 5 In the embodiment, the optical element corresponding to the second component area EA2 may be a camera, and the optical element corresponding to the first component area EA1 may be an optical sensor.

[0240] The display area DA is formed with a plurality of light emitting diodes and a plurality of pixel circuit units that generate and transmit a light emitting current to each of the plurality of light emitting diodes.

[0241] Here, one light emitting diode and one pixel circuit unit are referred to as a pixel PX.

[0242] In the display area DA, one pixel circuit unit and one light emitting diode are formed in a one-to-one arrangement.

[0243] Hereinafter, the display area DA is also referred to as a “normal display area”.

[0244] although Figure 5 The structure of the display panel DP below the cutting line is not shown in FIG. 1 , but the display area DA may be located below the cutting line.

[0245] The first component area EA1 includes a transparent layer so that light can pass therethrough, the transparent layer has no conductive layer or semiconductor layer, and has an auxiliary optical sensor area OPS in the underlying panel layer (see, for example, Figure 7 ) and having an auxiliary optical sensor region OPS in the upper panel layer, and a light blocking layer 220 (see, for example, Fig.10 ) and color filter 230 (see, for example, Fig.10 ) may have a structure that does not block light by forming an opening (hereinafter, referred to as an additional opening) at a position corresponding to the auxiliary optical sensor area OPS.

[0246] In addition, a black pixel defining layer 380 (see, for example, FIG. 1 ) located above the auxiliary optical sensor region OPS in the lower panel layer is formed. Fig.10 ) may have an additional opening corresponding to the auxiliary optical sensor area OPS.

[0247] A plurality of adjacent auxiliary optical sensor areas OPS may form one first element area EA1.

[0248] Even if the auxiliary optical sensor region OPS is located in the lower panel layer, there may not be an opening corresponding to the upper panel layer or the black pixel defining layer 380 .

[0249] That is, an opening is formed in the black pixel defining layer 380 and the light blocking layer 220 in a portion of the auxiliary optical sensor area OPS located in the first component area EA1, the black pixel defining layer 380 is formed in the remaining portion of the auxiliary optical sensor area OPS, and the remaining portion of the auxiliary optical sensor area OPS can be blocked by the black pixel defining layer 380 and / or the light blocking layer 220.

[0250] A portion of the optical sensor area OPS in the first component area EA1 allows light to pass therethrough, and thus, even if a sensor is formed on the rear surface of the light-emitting display device 1000 , the front surface may be detected.

[0251] On the contrary, although the auxiliary optical sensor area OPS is located in the display area DA, all the auxiliary optical sensor areas OPS are blocked by the black pixel defining layer 380 and / or the light blocking layer 220, and therefore, there may be no area through which light can pass and the sensor cannot be located behind the above-mentioned area.

[0252] will be described later Figures 6 to 9 One pixel and one auxiliary optical sensor area OPS are shown, and may have a pixel structure of the first component area EA1 or the display area DA.

[0253] On the other hand, depending on the embodiment, Figures 6 to 9 Pixels of can also be formed in the second component area EA2.

[0254] The display panel DP according to the embodiment may be mainly divided into a lower panel layer and an upper panel layer.

[0255] The lower panel layer is a part where the light emitting diodes and pixel circuit units constituting the pixels are arranged, and may even include a packaging layer covering it (see Fig.10 of 400).

[0256] That is, the lower panel layer is from the substrate (see Fig.10 110) to the encapsulation layer (see Fig.10 400) and includes an anode (see Fig.10 Anode in), black pixel limit layer (see Fig.10 380 in), the luminescent layer (see Fig.10 EML in) and spacers (see Fig.10 385), functional layer (see Fig.10 FL in) and cathode (see Fig.10 The present invention also includes a cathode in the substrate, and further includes an insulating layer between the substrate and the anode, the semiconductor layer and the conductive layer.

[0257] On the other hand, the upper panel layer is located above the encapsulation layer and includes a sensing insulating layer (see Fig.10 501, 510 and 511 in ) and a plurality of sensing electrodes capable of detecting touch (see Fig.10 540 and 541 in the figure), and may also include a light blocking layer (see Fig.10 220), color filters (see Fig.10 230) and a planarization layer (see Fig.10of 550).

[0258] On the other hand, we will focus on Figures 6 to 10 The structure of the lower panel layer of the display area DA will be explained.

[0259] Despite Figure 5 Although not shown in the figure, the non-display area may be further provided outside the display area DA.

[0260] In addition, although Figure 5 A display panel for a mobile phone is shown, but the embodiment may be applied to any display panel in which an optical element may be located on the back side of the display panel, and the embodiment may also be applied to a flexible light-emitting display device.

[0261] In the case of a foldable light-emitting display device among flexible light-emitting display devices, the second component area EA2 and the first component area EA1 may be formed at the same Figure 5 The positions shown are different positions.

[0262] The circuit structure of the pixel located in the lower panel layer of the display panel DP may vary and may include at least one switching transistor, at least one capacitor, and a driving transistor outputting current to a light emitting diode, and pixels having various circuit structures may be used.

[0263] In the following, we will Figures 6 to 10 Looking at the detailed planar structure and stack structure of the pixels formed in the display area DA, and each pixel in the following embodiments includes one auxiliary optical sensor area OPS.

[0264] Figures 6 to 9 is a diagram specifically illustrating a structure of each layer according to a manufacturing order of a part of a pixel circuit unit of a lower panel layer of a display panel according to an embodiment.

[0265] Figure 6 The structure of the second data conductive layer in the pixel circuit unit is shown.

[0266] A plurality of gate conductive layers, semiconductor layers, and a first data conductive layer SD1 may be located below the second data conductive layer, and Figure 7 The detailed structure is shown in FIG.

[0267] refer to Figure 6 , a first organic layer located below the second data conductive layer (see Fig.10 181) has a lower organic layer opening OP3.

[0268] In a plan view, the lower organic layer opening OP3 may overlap the connection portion 171CM, the anode connection electrode, and the expansion portion FL-SD1 located in the first data conductive layer SD1, and may expose them.

[0269] A second data conductive layer including the data line 171 , the driving voltage line 172 , and the anode connection electrode ACM2 may be positioned on the first organic layer 181 .

[0270] The second organic layer 182 and the third organic layer 183 are located on the second data conductive layer, and the anode connection opening OP4 is located in the second organic layer 182 and the third organic layer 183 .

[0271] The anode connection electrode ACM2 may be electrically connected to the anode through the anode connection opening OP4.

[0272] exist Figure 6 In the embodiment of the present invention, the data line 171 and the driving voltage line 172 may extend substantially in a vertical direction (eg, a second direction DR2).

[0273] The data line 171 may be connected to the connection portion 171CM of the first data conductive layer SD1 through the lower organic layer opening OP3 .

[0274] The data line 171 extends in a vertical direction (eg, the second direction DR2 ) and has a structure in which it is bent, and the data line 171 at the bent portion may form a boundary of the auxiliary optical sensor region OPS.

[0275] A plurality of adjacent auxiliary optical sensor areas OPS may form one first element area EA1.

[0276] The driving voltage line 172 may be connected to the expansion portion FL-SD1 of the first data conductive layer SD1 through the lower organic layer opening OP3.

[0277] The anode connection electrode ACM2 may be electrically connected to the anode connection electrode of the first data conductive layer SD1 through the lower organic layer opening OP3 .

[0278] refer to Figure 6 , the driving voltage line 172 further includes an expansion portion FL-SD2 and a protruding wiring portion 172 - e, and has a structure that is not formed in a portion where the anode connection electrode ACM2 is formed.

[0279] The expansion portion FL-SD2 is widely formed to flatten the anode located on the top.

[0280] On the other hand, two protruding wiring portions 172-e of the driving voltage line 172 are formed on opposite sides of the two data lines 171 to flatten the anode located above them, resulting in a total of four wiring structures located below the anode (e.g., two data lines 171 and two protruding wiring portions 172-e).

[0281] refer to Figure 7 , two data lines 171 formed adjacent to each other are bent in opposite directions and have a portion with a large gap, and the portion corresponds to the auxiliary optical sensor region OPS.

[0282] An auxiliary optical sensor region OPS is located between two adjacent pixel circuit units.

[0283] The left and right boundaries of the auxiliary optical sensor area OPS are formed by the two data lines 171, and the lower boundary is formed by the first scan line 151. The upper boundary may be formed by the upper second scan line 152b and / or the lower second scan line 152a.

[0284] Depending on the embodiment, a portion 1134 of the first semiconductor layer 130 overlapping the data line 171 in a plan view may form left and right boundaries of the auxiliary optical sensor region OPS.

[0285] Due to the structure under the anode as described above, the anode has a flat characteristic.

[0286] The second data conductive layer may include a metal such as aluminum (Al), copper (Cu), molybdenum (Mo), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0287] exist Figure 7 In addition, Figure 6 The layer other than the second data conducting layer. Figure 7 and Fig.10 The structure of the pixel circuit unit of the entire lower panel layer is described as follows.

[0288] refer to Figure 7 and Fig.10 , the metal layer BML is located on the substrate 110 .

[0289] The substrate 110 may include a material having a rigid property and not being bent, such as glass, or may include a flexible material such as plastic (eg, polyimide) that may be bent.

[0290] In the case of flexible substrates, such as Fig.10 As shown, the substrate 110 may have a multi-layer structure formed of alternately stacked polyimide layers and barrier layers formed of an inorganic insulating material.

[0291] The metal layer BML includes a plurality of extension portions BML1 and a connection portion BML2 connecting the plurality of extension portions BML1 to one another.

[0292] The expansion portion BML1 of the metal layer BML may be formed at a position overlapping with the channel 1132 of the driving transistor T1 in the first semiconductor layer 130 in a plan view.

[0293] The metal layer BML is also called a lower shielding layer and may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti) or a metal alloy thereof, and may additionally include amorphous silicon and may consist of a single layer or a plurality of layers.

[0294] refer to Fig.10 A buffer layer 111 covering the substrate 110 and the metal layer BML is located on the substrate 110 .

[0295] The buffer layer 111 is used to prevent impure elements from penetrating into the first semiconductor layer 130, and may be a layer containing silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of an inorganic insulating layer.

[0296] The first semiconductor layer 130 formed of a silicon semiconductor (eg, a polysilicon semiconductor) is located on the buffer layer 111 .

[0297] The first semiconductor layer 130 includes a channel 1132 of the driving transistor T1 , a first region 1131 , and a second region 1133 .

[0298] In addition, the first semiconductor layer 130 includes a channel of each of the driving transistor T1, the second transistor T2, the fifth transistor T5 and the sixth transistor T6, and plasma is formed on the opposite side of each channel. Through the treatment or doping process, the plasma has a region with conductive layer characteristics and serves as the first electrode and the second electrode.

[0299] The transistor including the first semiconductor layer 130 may be referred to as a polysilicon semiconductor transistor LTPS TFT.

[0300] In a plan view, the channel 1132 of the driving transistor T1 may be bent into a U shape.

[0301] However, the shape of the channel 1132 of the driving transistor T1 is not limited thereto and may be changed in various ways.

[0302] For example, the channel 1132 of the driving transistor T1 may be bent into different shapes, or may be formed like a strip.

[0303] The first region 1131 and the second region 1133 of the driving transistor T1 may be located at opposite sides of the channel 1132 of the driving transistor T1 .

[0304] The first region 1131 and the second region 1133 located in the first semiconductor layer 130 function as a first electrode and a second electrode of the driving transistor T1 .

[0305] The channel, the first region, and the second region of the second transistor T2 are located in a portion 1134 of the first semiconductor layer 130 extending downward from the first region 1131 of the driving transistor T1 .

[0306] The channel, the first region, and the second region of the fifth transistor T5 are located in a portion 1135 of the first semiconductor layer 130 extending upward from the first region 1131 of the driving transistor T1 .

[0307] The channel, the first region, and the second region of the sixth transistor T6 are located in a portion 1136 of the first semiconductor layer 130 extending upward from the second region 1133 of the driving transistor T1 .

[0308] refer to Fig.10 The first gate insulating layer 141 is located on the buffer layer 111 and the first semiconductor layer 130 including the channel 1132 of the driving transistor T1 , the first region 1131 , and the second region 1133 .

[0309] The first gate insulating layer 141 may include silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of an inorganic insulating layer.

[0310] A first gate conductive layer GAT1 including a gate electrode 1151 of the driving transistor T1 may be positioned on the first gate insulating layer 141 .

[0311] The first gate conductive layer GAT1 includes a gate electrode of each of the driving transistor T1 , the second transistor T2 , the fifth transistor T5 , and the sixth transistor T6 .

[0312] In a plan view, the gate electrode 1151 of the driving transistor T1 may overlap the channel 1132 of the driving transistor T1 .

[0313] In a plan view, the channel 1132 of the driving transistor T1 overlaps with the gate electrode 1151 of the driving transistor T1 .

[0314] The first gate conductive layer GAT1 may further include a first scan line 151 and an emission control line 155 .

[0315] The first scan lines 151 and the emission control lines 155 may extend substantially in a horizontal direction (hereinafter, also referred to as a first direction DR1 ).

[0316] The first scan line 151 may be connected to a gate electrode of the second transistor T2 .

[0317] The first scan line 151 may be integral with the gate electrode of the second transistor T2 .

[0318] On the other hand, the emission control line 155 may be connected to the gate electrode of the fifth transistor T5 and the gate electrode of the sixth transistor T6 , and the emission control line 155 and the gate electrode of the fifth transistor T5 and the gate electrode of the sixth transistor T6 may be integrally formed.

[0319] The first gate conductive layer GAT1 may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0320] After forming the first gate conductive layer GAT1 including the gate electrode 1151 of the driving transistor T1 , a plasma treatment or a doping process may be performed to make the exposed region of the first semiconductor layer 130 conductive.

[0321] That is, the first semiconductor layer 130 overlapping the first gate conductive layer GAT1 in plan view is not conductive, and a portion of the first semiconductor layer 130 not overlapping the first gate conductive layer GAT1 in plan view may have the same characteristics as those of a conductive layer.

[0322] As a result, the transistor including the conductive portion has p-type transistor characteristics, and the driving transistor T1 , the second transistor T2 , the fifth transistor T5 , and the sixth transistor T6 are p-type transistors.

[0323] refer to Fig.10 The second gate insulating layer 142 may be located on the first gate conductive layer GAT1 and the first gate insulating layer 141 , and the second gate insulating layer 142 may cover the gate electrode 1151 of the driving transistor T1 .

[0324] The second gate insulating layer 142 may include silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of an inorganic insulating layer.

[0325] The second gate conductive layer GAT2 including the first storage electrode 1153 of the storage capacitor Cst, the lower shield layer 3155 of the third transistor T3 , and the lower shield layer 4155 of the fourth transistor T4 is positioned on the second gate insulating layer 142 .

[0326] The lower shielding layer 3155 and the lower shielding layer 4155 are respectively located under the channel of the third transistor T3 and the channel of the fourth transistor T4 and serve to shield light or electromagnetic interference provided to the channels from below.

[0327] In a plan view, the first storage electrode 1153 overlaps the gate electrode 1151 of the driving transistor T1 to form a storage capacitor Cst.

[0328] An opening 1152 is formed in the first storage electrode 1153 of the storage capacitor Cst.

[0329] In a plan view, the opening 1152 of the first storage electrode 1153 of the storage capacitor Cst may overlap the gate electrode 1151 of the driving transistor T1 .

[0330] The first storage electrode 1153 extends in a horizontal direction (eg, first direction DR1 ) and is connected to adjacent first storage electrodes 1153 .

[0331] In a plan view, the lower shield layer 3155 of the third transistor T3 may overlap the channel 3137 and the gate electrode 3151 of the third transistor T3 .

[0332] In a plan view, the lower shield layer 4155 of the fourth transistor T4 may overlap the channel 4137 and the gate electrode 4151 of the fourth transistor T4.

[0333] The second gate conductive layer GAT2 may further include a lower second scan line 152 a , a lower initialization control line 153 a , and a first initialization voltage line 127 .

[0334] The lower second scan line 152 a , the lower initialization control line 153 a , and the first initialization voltage line 127 may extend substantially in a horizontal direction (eg, a first direction DR1 ).

[0335] The lower second scan line 152a may be connected to the lower shielding layer 3155 of the third transistor T3.

[0336] The lower second scan line 152a may be formed integrally with the lower shielding layer 3155 of the third transistor T3.

[0337] The lower initialization control line 153 a may be connected to the lower shielding layer 4155 of the fourth transistor T4 .

[0338] The lower initialization control line 153 a may be integrally formed with the lower shielding layer 4155 of the fourth transistor T4 .

[0339] The second gate conductive layer GAT2 may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0340] refer to Fig.10 , the first interlayer insulating layer 161 may be located on the second gate insulating layer 142 and the second gate conductive layer GAT2 including the first storage electrode 1153 of the storage capacitor Cst, the lower shielding layer 3155 of the third transistor T3, and the lower shielding layer 4155 of the fourth transistor T4.

[0341] The first interlayer insulating layer 161 may include silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of the inorganic insulating layer. Depending on the embodiment, the inorganic insulating material can be formed thickly.

[0342] The oxide semiconductor layer ACT2 including the channel 3137, the first area 3136, and the second area 3138 of the third transistor T3, the channel 4137, the first area 4136, and the second area 4138 of the fourth transistor T4, and the channel 7137, the first area 7136, and the second area 7138 of the seventh transistor T7 may be located on the first interlayer insulating layer 161. The oxide semiconductor layer ACT2 may be made of indium gallium zinc oxide (IGZO).

[0343] In addition, the oxide semiconductor layer ACT2 may further include a boost capacitor C boost The rising voltage electrode 3138t.

[0344] The channel 3137 , the first region 3136 , and the second region 3138 of the third transistor T3 and the channel 4137 , the first region 4136 , and the second region 4138 of the fourth transistor T4 may be connected to each other and may be formed as a whole.

[0345] On the other hand, the channel 7137 , the first region 7136 , and the second region 7138 of the seventh transistor T7 are separated from the channel 3137 of the third transistor T3 and the channel 4137 of the fourth transistor T4 , and thus the oxide semiconductor layer ACT2 may be divided into two separate portions.

[0346] The first region 3136 and the second region 3138 of the third transistor T3 are located on opposite sides of the channel 3137 of the third transistor T3 , and the first region 4136 and the second region 4138 of the fourth transistor T4 are located on opposite sides of the channel 4137 of the fourth transistor T4 .

[0347] The second region 3138 of the third transistor T3 is connected to the second region 4138 of the fourth transistor T4.

[0348] In a plan view, a channel 3137 of the third transistor T3 overlaps with the lower shield layer 3155 , and a channel 4137 of the fourth transistor T4 overlaps with the lower shield layer 4155 .

[0349] The first region 7136 and the second region 7138 of the seventh transistor T7 are located at opposite sides of the channel 7137 of the seventh transistor T7.

[0350] A transistor including the oxide semiconductor layer ACT2 may be referred to as an oxide semiconductor transistor (Oxide TFT).

[0351] Boost capacitor C boost The rising voltage electrode 3138t is located between the second region 3138 of the third transistor T3 and the second region 4138 of the fourth transistor T4.

[0352] In the plan view, the boost capacitor C boost The boosting electrode 3138t and a portion of the first scanning line 151 (hereinafter, also referred to as a boosting capacitor C boost The lower boost electrode) overlaps to form a boost capacitor C boost .

[0353] refer to Fig.10 The third gate insulating layer 143 may be located at the first interlayer insulating layer 161 and the channel 3137, the first region 3136 and the second region 3138 of the third transistor T3, the channel 4137, the first region 4136 and the second region 4138 of the fourth transistor T4, the channel 7137, the first region 7136 and the second region 7138 of the seventh transistor T7, and the boost capacitor C boost On the oxide semiconductor layer ACT2 of the boost electrode 3138t.

[0354] The third gate insulating layer 143 may be positioned on the entire surfaces of the oxide semiconductor layer ACT2 and the first interlayer insulating layer 161 .

[0355] Accordingly, the third gate insulating layer 143 may cover the boosting capacitor C boost The top surface and side surface of the rising voltage electrode 3138t, the channel 3137, the first area 3136 and the second area 3138 of the third transistor T3, the channel 4137, the first area 4136 and the second area 4138 of the fourth transistor T4, and the channel 7137, the first area 7136 and the second area 7138 of the seventh transistor T7.

[0356] However, the embodiment is not limited thereto, and the third gate insulating layer 143 may not be located on the entire surfaces of the oxide semiconductor layer ACT2 and the first interlayer insulating layer 161 .

[0357] For example, in a plan view, the third gate insulating layer 143 may overlap with the channel 3137 of the third transistor T3 , but may not overlap with the first region 3136 and the second region 3138 .

[0358] In addition, in a plan view, the third gate insulating layer 143 may overlap with the channel 4137 of the fourth transistor T4 but may not overlap with the first region 4136 and the second region 4138 .

[0359] The third gate insulating layer 143 may include silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiO x N y ) of an inorganic insulating layer.

[0360] A third gate conductive layer GAT3 including a gate electrode 3151 of the third transistor T3 , a gate electrode 4151 of the fourth transistor T4 , and a gate electrode 7151 of the seventh transistor T7 is formed on the third gate insulating layer 143 .

[0361] In a plan view, the gate electrode 3151 of the third transistor T3 may overlap the channel 3137 of the third transistor T3 .

[0362] In a plan view, the gate electrode 3151 of the third transistor T3 may overlap the lower shielding layer 3155 of the third transistor T3 .

[0363] In a plan view, the gate electrode 4151 of the fourth transistor T4 may overlap with the channel 4137 of the fourth transistor T4.

[0364] In a plan view, the gate electrode 4151 of the fourth transistor T4 may overlap the lower shielding layer 4155 of the fourth transistor T4.

[0365] In a plan view, the gate electrode 7151 of the seventh transistor T7 may overlap with the channel 7137 of the seventh transistor T7.

[0366] The third gate conductive layer GAT3 may further include an upper second scan line 152 b , an upper initialization control line 153 b , and a bypass control line 154 .

[0367] The upper second scan line 152 b , the upper initialization control line 153 b , and the bypass control line 154 may extend substantially in a horizontal direction (eg, the first direction DR1 ).

[0368] The upper second scan line 152 b forms the second scan line 152 together with the lower second scan line 152 a .

[0369] The upper second scan line 152 b may be connected to the gate electrode 3151 of the third transistor T3 .

[0370] The upper second scan line 152 b may be integral with the gate electrode 3151 of the third transistor T3 .

[0371] The upper initialization control line 153 b forms the initialization control line 153 together with the lower initialization control line 153 a .

[0372] The upper initialization control line 153 b may be connected to the gate electrode 4151 of the fourth transistor T4 .

[0373] The upper initialization control line 153 b may be integral with the gate electrode 4151 of the fourth transistor T4 .

[0374] The bypass control line 154 may be connected to the gate electrode 7151 of the seventh transistor T7 , and the bypass control line 154 may be integral with the gate electrode 7151 of the seventh transistor T7 .

[0375] In addition, the third gate conductive layer GAT3 may further include a lower second initialization voltage line 128 a .

[0376] The lower second initialization voltage line 128 a may extend substantially in a horizontal direction (eg, the first direction DR1 ), and a second initialization voltage may be applied to the lower second initialization voltage line 128 a .

[0377] The third gate conductive layer GAT3 may include a metal such as copper (Cu), molybdenum (Mo), aluminum (Al), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0378] The third gate conductive layer GAT3 including the gate electrode 3151 of the third transistor T3, the gate electrode 4151 of the fourth transistor T4 and the gate electrode 7151 of the seventh transistor T7 is formed by post-plasma treatment or a doping process, and a portion of the oxide semiconductor layer ACT2 overlapping with the third gate conductive layer GAT3 in a plan view is formed as a channel, and a portion of the oxide semiconductor layer ACT2 not overlapping with the third gate conductive layer GAT3 in a plan view is converted into a conductor.

[0379] The channel 3137 of the third transistor T3 may be located under the gate electrode 3151 so as to overlap with the gate electrode 3151 in a plan view.

[0380] In a plan view, the first region 3136 and the second region 3138 of the third transistor T3 may not overlap with the gate electrode 3151 .

[0381] The channel 4137 of the fourth transistor T4 may be located under the gate electrode 4151 so as to overlap with the gate electrode 4151 in a plan view.

[0382] In a plan view, the first region 4136 and the second region 4138 of the fourth transistor T4 may not overlap with the gate electrode 4151 .

[0383] The channel 7137 of the seventh transistor T7 may be located under the gate electrode 7151 so as to overlap with the gate electrode 7151 in a plan view.

[0384] In a plan view, the first region 7136 and the second region 7138 of the seventh transistor T7 may not overlap with the gate electrode 7151 .

[0385] The boosting electrode 3138t does not overlap the third gate conductive layer GAT3 in a plan view, and may have conductive properties that are the same as / similar to those of the conductor.

[0386] The transistor including the oxide semiconductor layer ACT2 may have characteristics of an n-type transistor.

[0387] refer to Fig.10 , the second interlayer insulating layer 162 may be located on the third gate conductive layer GAT3 including the gate electrode 3151 of the third transistor T3 , the gate electrode 4151 of the fourth transistor T4 , and the gate electrode 7151 of the seventh transistor T7 .

[0388] The second interlayer insulating layer 162 may have a single-layer or multi-layer structure.

[0389] The second interlayer insulating layer 162 may include silicon nitride (SiN x ), silicon oxide (SiO x ) or silicon nitride (SiO x N y ), or depending on the embodiment, the second interlayer insulating layer 162 may include an inorganic insulating material.

[0390] Two types of openings OP1 and OP2 may be formed in the second interlayer insulating layer 162 .

[0391] The two types of openings OP1 and OP2 may be formed using different masks.

[0392] The opening OP1 is an opening formed in at least one of the second interlayer insulating layer 162 , the third gate insulating layer 143 , the first interlayer insulating layer 161 , the second gate insulating layer 142 , and the first gate insulating layer 141 and may expose the first semiconductor layer 130 , the first gate conductive layer GAT1 , or the second gate conductive layer GAT2 .

[0393] The opening OP2 is an opening formed in the second interlayer insulating layer 162 and / or the third gate insulating layer 143 and may expose the oxide semiconductor layer ACT2 or the third gate conductive layer GAT3 .

[0394] One of the openings OP1 overlaps at least a portion of the gate electrode 1151 of the driving transistor T1 in a plan view, and is also defined in the third gate insulating layer 143 , the first interlayer insulating layer 161 , and the second gate insulating layer 142 .

[0395] At this time, one of the openings OP1 may overlap with the opening 1152 of the first storage electrode 1153 in a plan view, and may be located within the opening 1152 of the first storage electrode 1153 .

[0396] One of the openings OP2 can be aligned with the boost capacitor C in plan view. boost At least partially overlap, and may be formed in the third gate insulating layer 143 .

[0397] Another one of the openings OP1 overlaps at least a portion of the second region 1133 of the driving transistor T1 in a plan view, and is defined in the third gate insulating layer 143 , the first interlayer insulating layer 161 , the second gate insulating layer 142 , and the first gate insulating layer 141 .

[0398] Another one of the openings OP2 overlaps with at least a portion of the first region 3136 of the third transistor T3 in a plan view and may be formed in the third gate insulating layer 143 .

[0399] The first data conductive layer SD1 including the first connection electrode 1175 and the second connection electrode 3175 may be located on the second interlayer insulating layer 162 .

[0400] In a plan view, one end of the first connection electrode 1175 may overlap the gate electrode 1151 of the driving transistor T1 .

[0401] The one end of the first connection electrode 1175 may be connected to the gate electrode 1151 of the driving transistor T1 through the opening OP1 and the opening 1152 of the first storage electrode 1153 .

[0402] In a plan view, the other end of the first connection electrode 1175 may be connected to the boosting capacitor C boost overlapping.

[0403] The other end of the first connection electrode 1175 can be connected to the boosting capacitor C through the opening OP2. boost The rising voltage electrode 3138t.

[0404] Accordingly, the gate electrode 1151 of the driving transistor T1 and the boost capacitor Cboost The rising voltage electrode 3138t can be connected through the first connection electrode 1175.

[0405] At this time, the gate electrode 1151 of the driving transistor T1 is connected to the second region 3138 of the third transistor T3 and the second region 4138 of the fourth transistor T4 through the first connection electrode 1175 .

[0406] In a plan view, one end of the second connection electrode 3175 may overlap the second region 1133 of the driving transistor T1 .

[0407] The one end of the second connection electrode 3175 may be connected to the second region 1133 of the driving transistor T1 through the opening OP1 .

[0408] In a plan view, the other end of the second connection electrode 3175 may overlap the first region 3136 of the third transistor T3 .

[0409] The other end of the second connection electrode 3175 may be connected to the first region 3136 of the third transistor T3 through the opening OP2.

[0410] Accordingly, the second region 1133 of the driving transistor T1 and the first region 3136 of the third transistor T3 may be connected through the second connection electrode 3175 , and the first semiconductor layer 130 and the oxide semiconductor layer ACT2 are electrically connected.

[0411] The first data conductive layer SD1 may further include a second initialization voltage line 128 b .

[0412] The second initialization voltage line 128b includes a wiring portion 128b-1 extending in a vertical direction (e.g., second direction DR2) and a first expansion portion 128b-2 protruding from the wiring portion 128b-1 to the opposite side in a horizontal direction (e.g., first direction DR1), and an end of the first expansion portion 128b-2 may be expanded.

[0413] The extended end of the first extended portion 128 b - 2 may be electrically connected to the lower second initialization voltage line 128 a in the third gate conductive layer GAT3 and the second region 7138 of the seventh transistor T7 in the oxide semiconductor layer ACT2 through two different openings OP2 .

[0414] As a result, the second initialization voltage is transmitted in the horizontal direction (eg, first direction DR1) through the lower second initialization voltage line 128a in the third gate conductive layer GAT3 and in the vertical direction (eg, second direction DR2) through the second initialization voltage line 128b in the first data conductive layer SD1.

[0415] In addition, the second initialization voltage is provided to the second region 7138 of the seventh transistor T7.

[0416] The first data conductive layer SD1 may further include connection portions 127CM and 171CM, an anode connection electrode, and an expansion portion FL-SD1.

[0417] The connecting portion 127CM is connected to the first initialization voltage line 127 of the second gate conductive layer GAT2 through the opening OP1 and is connected to the first region 4136 of the fourth transistor T4 located in the second semiconductor layer (oxide semiconductor layer ACT2) through the opening OP2, and the first initialization voltage flowing through the first initialization voltage line 127 is transmitted to the first region 4136 of the fourth transistor T4 located in the oxide semiconductor layer ACT2.

[0418] The connection portion 171CM is electrically connected to the end of the portion 1134 of the first semiconductor layer 130 (ie, the second transistor T2 ) through the opening OP1 .

[0419] The anode connection electrode is electrically connected to an end of the portion 1136 of the first semiconductor layer 130 (ie, the sixth transistor T6 ) through the opening OP1 .

[0420] The expansion portion FL-SD1 is widely formed to flatten the anode Anode located on the top.

[0421] In addition, the expansion portion FL-SD1 is connected to a portion 1135 (ie, the fifth transistor T5 ) of the first semiconductor layer 130 through the opening OP1 , and is also electrically connected to the first storage electrode 1153 .

[0422] The first data conductive layer SD1 may include a metal such as aluminum (Al), copper (Cu), molybdenum (Mo), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0423] refer to Fig.10 , the first organic layer 181 may be located on the second interlayer insulating layer 162 and the first data conductive layer SD1 including the first connection electrode 1175 and the second connection electrode 3175 .

[0424] The first organic layer 181 may be an organic insulating layer containing an organic material, and the organic material includes one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0425] refer to Figure 6 , Figure 7 and Fig.10 , the lower organic layer opening OP3 is located in the first organic layer 181 .

[0426] A second data conductive layer including the data line 171 , the driving voltage line 172 , and the anode connection electrode ACM2 may be positioned on the first organic layer 181 .

[0427] The second organic layer 182 and the third organic layer 183 are positioned on the second data conductive layer, and an anode connection opening OP4 is formed in the second organic layer 182 and the third organic layer 183 .

[0428] The anode connection electrode ACM2 is electrically connected to the anode Anode through the anode connection opening OP4.

[0429] Because in Figure 7 It may be difficult to easily identify the second data conductive layer, Figure 6 is a plan view showing only the second data conductive layer and the openings OP3 and OP4, and Figure 7 is a plan view showing the second data conductive layer and all surrounding layers thereof.

[0430] refer to Figure 6 and Figure 7 The lower organic layer opening OP3 overlaps the connection portion 171CM, the anode connection electrode, and the expansion portion FL-SD1 located in the first data conductive layer SD1 in a plan view to expose each of the connection portion 171CM, the anode connection electrode, and the expansion portion FL-SD1.

[0431] The second data conductive layer may include a data line 171 , a driving voltage line 172 , and an anode connection electrode ACM2 .

[0432] The data line 171 and the driving voltage line 172 may extend substantially in a vertical direction (eg, the second direction DR2 ).

[0433] The data line 171 is connected to the connection portion 171CM of the first data conductive layer SD1 through the lower organic layer opening OP3 and is connected to the second transistor T2 therethrough.

[0434] The data line 171 extends in a vertical direction (eg, the second direction DR2 ) and has a structure in which it is bent, and the data line 171 at the bent portion may form a boundary of the auxiliary optical sensor region OPS.

[0435] A plurality of adjacent auxiliary optical sensor areas OPS may form one first element area EA1.

[0436] The driving voltage line 172 is electrically connected to the fifth transistor T5 and the first storage electrode 1153 through the lower organic layer opening OP3 and the expansion portion FL-SD1 of the first data conductive layer SD1.

[0437] The anode connection electrode ACM2 is electrically connected to the anode connection electrode of the first data conductive layer SD1 through the lower organic layer opening OP3, and is electrically connected to the sixth transistor T6.

[0438] refer to Figure 6 , the driving voltage line 172 further includes an extension portion FL-SD2 and a protruding wiring portion 172 - e, and has a structure that is not formed in a portion where the anode connection electrode ACM2 is formed.

[0439] The extension portion FL-SD2 is widely formed to flatten the anode Anode located on the top.

[0440] On the other hand, two protruding wiring portions 172-e of the driving voltage line 172 are formed on the opposite sides of the two data lines 171 to flatten the anode Anode located above them, resulting in a total of four wiring structures located below the anode Anode (e.g., two data lines 171 and two protruding wiring portions 172-e).

[0441] refer to Figure 7 , two data lines 171 formed adjacent to each other are bent in opposite directions and have a portion with a large gap, and the portion corresponds to the auxiliary optical sensor region OPS.

[0442] An auxiliary optical sensor region OPS is located between two adjacent pixel circuit units.

[0443] The left and right boundaries of the auxiliary optical sensor area OPS are formed by the two data lines 171 , the lower boundary is formed by the first scan line 151 , and the upper boundary may be formed by the upper second scan line 152 b and / or the lower second scan line 152 a .

[0444] Depending on the embodiment, a portion 1134 of the first semiconductor layer 130 overlapping the data line 171 in a plan view may form left and right boundaries of the auxiliary optical sensor region OPS.

[0445] As described above, the structure below the anode Anode (the extension portion FL-SD1 and the wiring portion 128b-1 of the first data conductive layer SD1, the extension portion FL-SD2 and the data line 171 (e.g., the wiring portion 172-e) of the second data conductive layer, and the organic layers 181, 182, and 183) provide a planarization characteristic to the anode Anode.

[0446] In this embodiment, the extension portion FL- SD1 is electrically connected to the driving voltage line 172 (eg, the extension portion FL- SD2 ) to transmit the driving voltage.

[0447] The second data conductive layer may include a metal such as aluminum (Al), copper (Cu), molybdenum (Mo), or titanium (Ti), or a metal alloy thereof, and may consist of a single layer or a plurality of layers.

[0448] refer to Fig.10 , the second organic layer 182 and the third organic layer 183 are located on the second data conductive layer.

[0449] The second organic layer 182 and the third organic layer 183 may be organic insulating layers, and may include one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0450] Depending on the embodiment, the third organic layer 183 may be omitted.

[0451] An anode connection opening OP4 through which the anode Anode and the anode connection electrode ACM2 are electrically connected is formed in the second organic layer 182 and the third organic layer 183 .

[0452] refer to Figures 8 to 10 , an anode Anode is formed on the third organic layer 183 .

[0453] The anode Anode may further include an expansion portion Anode-e to receive current from the pixel circuit unit through the anode connection opening OP4.

[0454] refer to Fig. 9 , the two anode connection openings OP4 are arranged adjacent to each other, one of the two anode connection openings OP4 is used for connection of the anode Anode whose extension part Anode-e extends along the first direction DR1 and is included in the green light emitting diode, and the other of the two anode connection openings OP4 is used for connection of the anode Anode whose extension part Anode-e extends in the second direction and is included in the blue or red light emitting diode.

[0455] refer to Fig. 9 and Fig.10 , the black pixel defining layer 380 is located on the anode Anode and the third organic layer 183 , and the opening OP of the black pixel defining layer 380 is formed to overlap the anode Anode in a plan view.

[0456] The expansion portion Anode-e of the anode Anode is not exposed by the opening OP of the black pixel defining layer 380 , and has a structure overlapping the black pixel defining layer 380 in a plan view.

[0457] As a result, the anode connection opening OP4 also has a structure overlapping the black pixel defining layer 380 in a plan view.

[0458] refer to Fig.10 , since the anode connection opening OP4 does not overlap with the opening OP of the black pixel defining layer 380 and the opening OPBM of the light blocking layer 220 in a plan view, it can be seen that the structure overlaps with the black pixel defining layer 380 and the light blocking layer 220 in a plan view.

[0459] In addition, a portion of the lower organic layer opening OP3 (the first lower organic layer opening) overlaps with at least a portion of the opening OPBM of the light blocking layer 220 in a plan view, and the remaining lower organic layer opening OP3 (i.e., the second lower organic layer opening) overlaps with the light blocking layer 220 in a plan view.

[0460] On the other hand, in a plan view, all of the lower organic layer openings OP3 overlap with the black pixel defining layer 380 .

[0461] In addition, in this embodiment, a portion of the anode electrode Anode exposed through the opening OP of the black pixel defining layer 380 may be formed to be flat.

[0462] Based on the above plane structure, Fig.10 The cross-sectional structures of the display area DA, the first assembly area EA1, and the auxiliary optical sensor area OPS of the light emitting display device are explained.

[0463] Fig.10 is a cross-sectional view of a display panel of a light emitting display device according to an embodiment.

[0464] exist Fig.10 , in addition to the stacking structure of the display area DA, the stacking structure of the first component area EA1 is also shown.

[0465] exist Fig.10 The detailed stacking structure of the pixels in the display area DA shown in FIG. Figures 6 to 9 Let’s explain the anode.

[0466] exist Fig.10 In the embodiment, the pixel circuit unit includes the second organic layer 182 and the third organic layer 183 and refers to the configuration below the third organic layer 183 , and the light emitting diode refers to the configuration above the third organic layer 183 and below the encapsulation layer 400 .

[0467] refer to Fig.10 , the stacking structure on the anode Anode of the pixel in the display area DA is as follows.

[0468] A black pixel defining layer 380 having an opening OP exposing the anode Anode and covering at least a portion of the anode Anode may be located on the anode Anode.

[0469] The black pixel defining layer 380 is formed of a black organic material to prevent light applied from the outside from being reflected back to the outside.

[0470] Depending on the embodiment, the black pixel defining layer 380 may include a negative type black organic material, and may include a black pigment.

[0471] On the other hand, depending on the embodiment, a pixel defining layer formed of a highly transparent material may be used instead of the black pixel defining layer 380 .

[0472] Here, as a material having high transparency, a general polymer such as polystyrene (PS) or an imide polymer (e.g., polyimide (PI)) can be used. In addition, an organic insulating material such as polymethyl methacrylate (PMMA), a polymer derivative having a phenolic group, an acrylic polymer, and a siloxane polymer can be used.

[0473] The spacer 385 is located on the black pixel defining layer 380. The spacer 385 includes a first portion 385-1 located in a high and narrow area and a second portion 385-2 located in a low and wide area.

[0474] Unlike the black pixel defining layer 380 , the spacer 385 may be formed of a transparent organic insulating material.

[0475] Depending on the embodiment, the spacer 385 may be formed of a positive type transparent organic material.

[0476] The functional layer FL and the cathode Cathode are sequentially formed on the anode Anode, the spacer 385 and the black pixel defining layer 380 and may be located in the entire area of ​​the display area DA and the first component area EA1.

[0477] The light emitting layer EML is located between the functional layers FL, and the light emitting layer EML may be located only within the opening OP of the black pixel defining layer 380 .

[0478] Hereinafter, the functional layer FL and the light emitting layer EML may be combined and may be referred to as an intermediate layer.

[0479] The functional layer FL may include at least one of auxiliary layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer, and the hole injection layer and the hole transport layer may be located below the light emitting layer EML and the electron transport layer and the electron injection layer may be located above the light emitting layer EML.

[0480] The encapsulation layer 400 is located on the cathode.

[0481] The encapsulation layer 400 includes at least one inorganic layer and at least one organic layer, and depending on the embodiment, the encapsulation layer 400 may have a three-layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.

[0482] The encapsulation layer 400 may serve to protect the light emitting layer EML from moisture or oxygen that may enter from the outside.

[0483] Depending on the embodiment, the encapsulation layer 400 may have a structure in which an inorganic layer and an organic layer are further sequentially stacked.

[0484] exist Fig.10 In the embodiment of FIG. 5 , the sensing insulating layers 501 , 510 , and 511 and the plurality of sensing electrodes 540 and 541 are located on the encapsulation layer 400 for touch sensing.

[0485] exist Fig.10 In the embodiment of FIG. 5 , two sensing electrodes 540 and 541 may be used to capacitively sense touch.

[0486] Specifically, a first sensing insulating layer 501 is formed on the encapsulation layer 400 , and a plurality of sensing electrodes 540 and 541 are formed on the first sensing insulating layer 501 .

[0487] The plurality of sensing electrodes 540 and 541 may be insulated with the second sensing insulating layer 510 interposed therebetween, and some of the plurality of sensing electrodes 540 and 541 may be electrically connected through openings located in the sensing insulating layer 510 .

[0488] Here, the sensing electrodes 540 and 541 are made of a metal such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), molybdenum (Mo), titanium (Ti), and tantalum (Ta), or a metal alloy thereof, and may include a single layer or a plurality of layers.

[0489] The third sensing insulating layer 511 is formed on the sensing electrode 540 and the second sensing insulating layer 510 .

[0490] The light blocking layer 220 and the color filter 230 are positioned on the sensing electrode 540 and the third sensing insulating layer 511 .

[0491] The light blocking layer 220 may be positioned to overlap the sensing electrodes 540 and 541 in a plan view, and may be positioned not to overlap a portion of the anode Anode except for the expansion portion Anode-e in a plan view.

[0492] This is to ensure that the anode electrode Anode capable of displaying an image is not shielded by the light blocking layer 220 and the sensing electrodes 540 and 541 in a plan view.

[0493] The color filter 230 may be located on the third sensing insulating layer 511 and the light blocking layer 220 .

[0494] The color filter 230 includes a red color filter that transmits red light, a green color filter that transmits green light, and a blue color filter that transmits blue light.

[0495] Each color filter 230 may be positioned to overlap an anode Anode of a light emitting diode in a plan view.

[0496] Light emitted from the light emitting layer EML may be changed into light of a corresponding color when it passes through the color filter 230 .

[0497] The light blocking layer 220 may be located between the color filters 230 .

[0498] Depending on the embodiment, the color filter 230 may be replaced with a color conversion layer, or may further include a color conversion layer.

[0499] The color conversion layer may include quantum dots.

[0500] In addition, depending on the embodiment, there may be a reflection adjustment layer filling the opening OPBM of the light blocking layer 220 instead of the color filter 230 .

[0501] The reflection adjusting layer may have a structure covering the light blocking layer 220 .

[0502] A planarization layer 550 covering the color filter 230 may be located on the color filter 230 , and since the color filter 230 and the light blocking layer 220 serve to prevent reflection of external light, an additional polarizer is not attached.

[0503] on the other hand, Fig.10 Also shown is the cross-sectional structure of the first component area EA1 .

[0504] The first component area EA1 is an area where a plurality of auxiliary optical sensor areas OPS are disposed in the lower panel layer, and although the same pixel circuit units as those of the display area DA are formed in some areas, Fig.10 Focus is placed on a cross-sectional structure of the auxiliary optical sensor area OPS different from the display area DA.

[0505] On the other hand, the auxiliary optical sensor area OPS may be located in the display area DA, but all the auxiliary optical sensor areas OPS in the display area DA include the black pixel defining layer 380 and / or the light blocking layer 220, so light is blocked and does not pass therethrough.

[0506] The first component area EA1 includes an auxiliary optical sensor area OPS through which light can pass, and a conductive layer or a semiconductor layer is not provided in the auxiliary optical sensor area OPS so that light can pass therethrough. At a specific position corresponding to the auxiliary optical sensor area OPS, additional openings OP-1, OPBM-1 are defined in the black pixel defining layer 380 so that light can pass therethrough, and at another position corresponding to the auxiliary optical sensor area OPS, a light blocking layer 220 is located on top of the optical sensor area OPS, and therefore, a structure that does not block light can be provided.

[0507] On the other hand, a portion of the auxiliary optical sensor area OPS located in the first component area EA1 is formed to overlap the black pixel defining layer 380 and / or the light blocking layer 220 through which light does not pass in a plan view.

[0508] In this way, some of the multiple auxiliary optical sensor areas OPS located in the first component area EA1 are formed so that light can pass therethrough, and the remaining auxiliary optical sensor areas OPS located in the first component area EA1 are formed so that light cannot pass therethrough.

[0509] Here, the auxiliary optical sensor area OPS in the first component area EA1 that can transmit light is referred to as a "first optical sensor area or a transmissive optical sensor area", and the auxiliary optical sensor area OPS in the first component area EA1 that cannot transmit light can be referred to as a "second optical sensor area or a non-transmissive optical sensor area".

[0510] In this way, if the number of first optical sensor areas OPS1 and second optical sensor areas OPS2 in a first component area EA1 is adjusted, the sensor located on the back side of the first component area EA1 may detect the front surface of the light-emitting display device and additionally improve the color of light reflection in the first component area EA1.

[0511] On the other hand, depending on the embodiment, the first component area EA1 may have a reflectivity or a reflection color different from that of the display area DA surrounding the first component area EA1, thereby preventing the first component area EA1 from being visible to the user.

[0512] In this embodiment, the light blocking layer 220 and / or the black pixel defining layer 380 are located on the front side of the auxiliary optical sensor region OPS positioned between adjacent pixel circuit units, and the light blocking layer 220 and the black pixel defining layer 380 respectively have additional openings OPBM-1 and OP-1 overlapping with the first optical sensor region OPS1 of the auxiliary optical sensor region OPS in a plan view. Since no additional opening is formed in the second optical sensor region OPS2 of the auxiliary optical sensor region OPS, the light blocking layer 220 and / or the black pixel defining layer 380 and the auxiliary optical sensor region OPS may have a structure in which they overlap in a plan view.

[0513] On the other hand, depending on the embodiment, when a transparent pixel defining layer is used instead of the black pixel defining layer 380 , the pixel defining layer may not have openings in the first optical sensor region OPS1 and the second optical sensor region OPS2 .

[0514] The corresponding embodiments are Fig.34 was explained.

[0515] In particular, based on Fig.10 , the stacking structure of the first component area EA1 according to the embodiment is as follows.

[0516] A buffer layer 111 , which is an inorganic insulating layer, is positioned on the substrate 110 , and a first gate insulating layer 141 and a second gate insulating layer 142 , which are inorganic insulating layers, are sequentially positioned on the buffer layer 111 .

[0517] In addition, a first interlayer insulating layer 161 , a third gate insulating layer 143 , and a second interlayer insulating layer 162 , which are inorganic insulating layers, are sequentially stacked on the second gate insulating layer 142 .

[0518] A first organic layer 181 , a second organic layer 182 , and a third organic layer 183 , which are organic insulating layers, are sequentially stacked on the second interlayer insulating layer 162 .

[0519] Fig.10 A stacked structure from the substrate 110 to the anode Anode (ie, to the third organic layer 183 ) in the embodiment of FIG. 1 may correspond to the auxiliary optical sensor region OPS.

[0520] As described above, the metal layer BML, the first semiconductor layer 130 , the first gate conductive layer GAT1 , the second gate conductive layer GAT2 , the oxide semiconductor layer ACT2 , the third gate conductive layer GAT3 , the first data conductive layer SD1 and the second data conductive layer are not located in the auxiliary optical sensor region OPS.

[0521] The auxiliary optical sensor area OPS is divided into a first optical sensor area OPS1 (which is formed so that light can pass therethrough) and a second optical sensor area OPS2 (which is formed so that light cannot pass therethrough).

[0522] An upper stack structure of the first optical sensor region OPS1 (transmissive optical sensor region) through which light passes may be as follows.

[0523] The additional opening OP- 1 of the black pixel defining layer 380 is located on the third organic layer 183 in the first optical sensor region OPS1 to have a structure through which light can pass.

[0524] A functional layer FL may be located on the third organic layer 183 , and a cathode Cathode may be located on the functional layer FL.

[0525] The encapsulation layer 400 is positioned on the cathode, and the sensing insulating layers 501 , 510 , and 511 are sequentially positioned on the top of the cathode.

[0526] The encapsulation layer 400 may have a triple-layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer, which are sequentially stacked.

[0527] In addition, all of the sensing insulating layers 501 , 510 , and 511 may be inorganic insulating layers.

[0528] The additional opening OPBM- 1 of the light blocking layer 220 is located on the third sensing insulating layer 511 .

[0529] Therefore, the light blocking layer 220 and the black pixel defining layer 380 are not formed in the first optical sensor region OPS1 through which light of the first component area EA1 passes, and thus the light may pass from the first optical sensor region OPS1.

[0530] The planarization layer 550 may be located on the third sensing insulation layer 511 in the first optical sensor region OPS1.

[0531] On the other hand, the stack structure of the second optical sensor region OPS2 (non-transmissive optical sensor region) through which light does not pass may be as follows.

[0532] The black pixel defining layer 380 is positioned on the third organic layer 183 in the second optical sensor region OPS2 and has no additional opening, and thus the black pixel defining layer 380 may have a structure through which light cannot pass.

[0533] The functional layer FL, the cathode Cathode, and the encapsulation layer 400 are sequentially positioned on the black pixel defining layer 380 , and the sensing insulation layers 501 , 510 , and 511 are sequentially positioned on the encapsulation layer 400 .

[0534] The encapsulation layer 400 may have a three-layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.

[0535] In addition, all of the sensing insulating layers 501 , 510 , and 511 may be inorganic insulating layers.

[0536] The light blocking layer 220 is located on the third sensing insulating layer 511 and has no additional opening, and thus the light blocking layer 220 may have a structure through which light cannot pass.

[0537] Therefore, the second optical sensor area OPS2 (non-transmissive optical sensor area) through which light in the first component area EA1 does not pass overlaps the light blocking layer 220 and / or the black pixel defining layer 380 in a plan view, and thus, light cannot pass therethrough.

[0538] The planarization layer 550 may be located on the light blocking layer 220 in the second optical sensor region OPS2.

[0539] In the above-described example, a total of three organic layers 181 , 182 , and 183 are formed, and the anode connection opening OP4 is formed in the second organic layer 182 and the third organic layer 183 .

[0540] However, at least two organic layers may be formed, and in this case, the anode connection opening may be formed in an upper organic layer disposed away from the substrate and the lower organic layer opening may be formed in a lower organic layer disposed close to the substrate.

[0541] Hereinabove, the cross-sectional structure of the first optical sensor area OPS1 and the second optical sensor area OPS2 included in the first component area EA1 of the entire light emitting display device is explained.

[0542] In the following, we will Fig.11 and Fig.12 A specific planar structure and a cross-sectional structure of the first optical sensor area OPS1 in the first element area EA1 are explained.

[0543] Fig.11 is a plan view of a first optical sensor region of a first component region according to an embodiment, and Fig.12 yes Fig.11 A cross-sectional view of a first optical sensor area of ​​a first component area.

[0544] First, refer to Fig.11, the first optical sensor area OPS1 located in the first component area EA1 may include the additional opening OPBM- 1 of the light blocking layer 220 and the additional opening OP- 1 of the black pixel defining layer 380 .

[0545] exist Fig.11 , the pixel circuit unit located in the auxiliary optical sensor region OPS is not shown, and only the structures of the light blocking layer 220 and the black pixel defining layer 380 located thereover are shown.

[0546] refer to Fig.11 , the additional opening OPBM-1 of the light blocking layer 220 has an area smaller than the area of ​​the additional opening OP-1 of the black pixel defining layer 380, so that when viewed from the front (i.e., in a plan view), the black pixel defining layer 380 has a structure shielded by the light blocking layer 220.

[0547] exist Fig.11 , the additional opening OP-1 of the black pixel defining layer 380 that is shielded by the light blocking layer 220 when viewed from the front (ie, in a plan view) is shown as a dotted line.

[0548] On the other hand, Fig.11 In the embodiment, the additional opening OP-1 of the black pixel defining layer 380 has a maximum horizontal width and a maximum vertical width of 5 μm to 15 μm, respectively.

[0549] In addition, the gap between the additional opening OP-1 of the black pixel defining layer 380 and the additional opening OPBM-1 of the light blocking layer 220 may be equal to or greater than 1 μm and equal to or less than 2 μm, which may cause misalignment of the black pixel defining layer 380, thereby preventing the additional opening OP-1 of the black pixel defining layer 380 from being shielded.

[0550] and Fig.11 Differently, the shape of the additional opening OP- 1 of the black pixel defining layer 380 may be formed in various shapes such as a circular shape or other polygonal shapes.

[0551] exist Fig.12 4 shows in detail the relationship between the additional opening OPBM-1 of the light blocking layer 220 and the additional opening OP-1 of the black pixel defining layer 380.

[0552] exist Fig.12 , an organic layer 180 constituting a portion of a pixel circuit unit and a data line 171 located in a second data conductive layer are schematically shown.

[0553] Here, the organic layer 180 may be formed by Fig.10 The organic layers 181, 182 and 183 are combined into one layer and the organic layer is shown.

[0554] refer to Fig.12 , the additional opening OPBM-1 of the light blocking layer 220 has a width narrower than that of the additional opening OP-1 of the black pixel defining layer 380, so that the black pixel defining layer 380 has a structure shielded by the light blocking layer 220 in a plan view.

[0555] That is, the end of the black pixel defining layer 380 is located inwardly by a first horizontal gap gap1 from the end of the light blocking layer 220 .

[0556] The cathode Cathode is located on the black pixel defining layer 380. The cathode Cathode located on the inclined surface of the black pixel defining layer 380 is also not exposed through the additional opening OPBM-1 of the light blocking layer 220, and has a structure hidden by the light blocking layer 220.

[0557] As a result, even if external light enters the additional opening OPBM-1 of the light blocking layer 220, it is not reflected from the cathode located on the inclined surface of the black pixel defining layer 380, so the position of the additional opening OPBM-1 of the light blocking layer 220 is invisible to the user's eyes.

[0558] For reference, external light may be incident on and reflected at the cathode Cathode located on the organic layer 180 , but only nearly vertical light may be incident on and reflected by the cathode Cathode, and thus it is substantially invisible to the user's eyes.

[0559] On the other hand, since the cathode Cathode located on the inclined surface of the black pixel defining layer 380 reflects external light at various angles and can be easily seen by the user, in this embodiment, the cathode Cathode located on the inclined surface of the black pixel defining layer 380 is shielded by the light blocking layer 220, so that the position of the additional opening OPBM-1 of the light blocking layer 220 is not recognized.

[0560] On the other hand, reference Fig.12 , the width of the auxiliary optical sensor region OPS of the pixel circuit unit divided by the data line 171 is greater than the width of the additional opening OPBM- 1 of the light blocking layer 220 and the width of the additional opening OP- 1 of the black pixel defining layer 380 .

[0561] In other words, the end of the data line 171 may be located inwardly by the second horizontal gap gap2 from the end of the black pixel defining layer 380 , and may be located inwardly by the sum of the first horizontal gap gap1 and the second horizontal gap gap2 from the end of the light blocking layer 220 .

[0562] As a result, the data line 171 is shielded by the light blocking layer 220 and the black pixel defining layer 380 in a plan view, and external light is not reflected from the data line 171, so that the position of the additional opening OPBM-1 of the light blocking layer 220 is invisible to the user's eyes.

[0563] therefore, Fig.11 and Fig.12 The embodiment has an advantage that a user cannot easily see where the first optical sensor area OPS1 is provided and cannot distinguish it from other display areas DA.

[0564] refer to Fig.10 , the color filter 230 is located on the light blocking layer 220 in the display area DA, but referring to Fig.12 , the color filter 230 may not be located in the first optical sensor area OPS1.

[0565] Will pass Fig.13 and Fig.14 Come Fig.11 and Fig.12 The embodiments are compared with the comparative examples.

[0566] Fig.13 is a plan view of a first optical sensor region of a first component region according to a comparative example, and Fig.14 yes Fig.13 A cross-sectional view of a first optical sensor area of ​​a first component area.

[0567] exist Fig.13 and Fig.14 , the additional opening OPBM- 1 ′ of the light blocking layer 220 has an area larger than that of the additional opening OP- 1 ′ of the black pixel defining layer 380 .

[0568] refer to Fig.13 , the additional opening OP- 1 ′ of the black pixel defining layer 380 is located within the additional opening OPBM- 1 ′ of the light blocking layer 220 and is not covered by the light blocking layer 220 , and thus the additional opening OP- 1 ′ is shown as a solid line.

[0569] In addition, refer to Fig.14 The additional opening OPBM-1' of the light blocking layer 220 has a width greater than that of the additional opening OP-1' of the black pixel defining layer 380, so that the cathode located on the inclined surface of the black pixel defining layer 380 is exposed when viewed from the front (ie, in a plan view).

[0570] That is, the end of the black pixel defining layer 380 protrudes from the end of the light blocking layer 220 by a 1-1 horizontal gap gap1 ′.

[0571] As a result, after external light enters through the additional opening OPBM-1′ of the light blocking layer 220, it is reflected from the cathode located above the inclined surface of the black pixel defining layer 380, allowing the user's eyes to easily recognize the position of the additional opening OPBM-1′ of the light blocking layer 220.

[0572] Therefore, in the comparative example, there is a disadvantage that the user can easily see the position where the first optical sensor area OPS1 ′ is provided and distinguish it from the other display areas DA.

[0573] On the other hand, Fig.14 In the comparative example of FIG. 1 , the end of the data line 171 may be positioned inward from the end of the black pixel defining layer 380 by a difference of 2-1 horizontal gap gap2 ′ minus 1-1 horizontal gap gap1 ′.

[0574] exist Fig.11 and Fig.12 In the embodiment, the black pixel defining layer 380 and the cathode Cathode located on the inclined surface of the black pixel defining layer 380 have a structure shielded by the light blocking layer 220 in a plan view.

[0575] However, depending on the embodiment, a plurality of color filters may be overlapped instead of the light blocking layer 220 to cover the black pixel defining layer 380 and the cathode located on the inclined surface of the black pixel defining layer 380 .

[0576] Fig.15A is a cross-sectional view of a display panel of a light emitting display device according to another embodiment.

[0577] Will pass FIG. 15A to FIG. 19 This embodiment is explained.

[0578] FIG. 15B to FIG. 19 is a cross-sectional view of a first optical sensor region of a first component region according to other embodiments.

[0579] First, we will explain Fig.15A and Fig. 15B Embodiment of the invention.

[0580] exist Fig.15A and Fig. 15B In the embodiment, the light blocking layer 220 and the additional opening OPBM-1 of the light blocking layer 220 are not formed and a plurality of color filters 230R, 230G and 230B are disposed at the position and are connected to the light blocking layer 220. Fig.10 and Fig.12 In contrast, the plurality of color filters 230R, 230G, and 230B have an additional opening OPCF-1 formed.

[0581] Since the light blocking layer 220 is replaced by the plurality of color filters 230R, 230G, and 230B, the light blocking layer 220 may not be disposed on the black pixel defining layer 380 even in the display area DA.

[0582] Fig.15A and Fig. 15B They are respectively Fig.10 and Fig.12 The corresponding figure and Fig. 15B The top view of the embodiment can be Fig.11 Similar and Fig.11 , the additional opening OPBM-1 of the light blocking layer 220 may be the additional opening OPCF-1 of the plurality of color filters 230R, 230G, and 230B.

[0583] refer to Fig. 15B , when viewed from the front (i.e., in a plan view), the additional opening OPCF-1 of the plurality of color filters 230R, 230G, and 230B has a width narrower than a width of the additional opening OP-1 of the black pixel defining layer 380, and the black pixel defining layer 380 has a structure shielded by the plurality of color filters 230R, 230G, and 230B in a plan view.

[0584] That is, the end of the black pixel defining layer 380 is located inwardly by a first horizontal gap gap1 from the ends of the plurality of color filters 230R, 230G, and 230B.

[0585] A gap between the additional opening OP- 1 of the black pixel defining layer 380 and the additional opening OPCF- 1 of the plurality of color filters 230R, 230G, and 230B may be equal to or greater than 1 μm and equal to or less than 2 μm.

[0586] The cathode Cathode is located on the black pixel defining layer 380, and the cathode Cathode located on the inclined surface of the black pixel defining layer 380 is also not exposed through the additional opening OPCF-1 of the plurality of color filters 230R, 230G, and 230B. The cathode Cathode has a structure that is not exposed but covered by the plurality of color filters 230R, 230G, and 230B.

[0587] As a result, even if external light enters the additional opening OPCF-1 of the multiple color filters 230R, 230G and 230B, it is not reflected from the cathode located on the inclined surface of the black pixel defining layer 380, so the external light does not affect the user's eyes, and the position of the additional opening OPCF-1 of the multiple color filters 230R, 230G and 230B is not recognized.

[0588] refer to Fig. 15BIn a plan view, the end of the cathode located on the inclined surface of the black pixel defining layer 380 is shielded by the blue filter 230B and the red filter 230R among the three color filters 230R, 230G and 230B, and is located inside the end of the green filter 230R and can be located outside the end of the green filter 230G.

[0589] That is, because the reference Fig. 20 When the blue filter 230B and the red filter 230R overlap in a plan view, most of the light can be blocked, so the cathode located on the inclined surface of the black pixel defining layer 380 has a structure that is shielded by the blue filter 230B and the red filter 230R in a plan view, thereby playing a role equivalent to a light blocking layer.

[0590] On the other hand, reference Fig. 15B , a width of the auxiliary optical sensor region OPS of the pixel circuit unit divided by the data line 171 is greater than a width of the additional opening OPCF- 1 of the plurality of color filters 230R, 230G, and 230B and a width of the additional opening OP- 1 of the black pixel defining layer 380 .

[0591] That is, the end of the data line 171 may be located inwardly by the second horizontal gap gap2 from the end of the black pixel defining layer 380 and may be located inwardly by the sum of the first horizontal gap gap1 and the second horizontal gap gap2 from the ends of the plurality of color filters 230R, 230G, and 230B.

[0592] As a result, the data line 171 is shielded by the multiple color filters 230R, 230G and 230B and the black pixel defining layer 380 in a plan view and external light is not reflected from the data line 171, thereby producing multiple visual effects in the user's eyes, and the position of the additional opening OPCF-1 of the color filters 230R, 230G and 230B is not recognized.

[0593] therefore, Fig. 15B The embodiment has an advantage that a user cannot easily see where the first optical sensor area OPS1 is provided and cannot distinguish it from other display areas DA.

[0594] exist Fig. 15B In the embodiment of FIG. 1 , the plurality of color filters 230R, 230G, and 230B have a stacked structure including a blue color filter 230B at the bottom, a red color filter 230R above the blue color filter 230B, and a green color filter 230G at the top.

[0595] In addition, the blue color filter 230B has the narrowest additional opening in the cross-sectional view, so that the additional opening of the blue color filter 230B may correspond to the additional opening OPCF- 1 of the plurality of color filters 230R, 230G, and 230B.

[0596] The red filter 230R may have an additional opening whose area in plan view is larger than that of the blue filter 230B, and the green filter 230G may have an additional opening whose area in plan view is larger than that of the red filter 230R and the blue filter 230B.

[0597] More specifically, among the red filter 230R and the blue filter 230B that affect color (especially black), the ends of the filters located relatively above are at least aligned with the ends of the black pixel defining layer 380, or can be located inside the ends of the black pixel defining layer 380.

[0598] As a result, another color filter located at the lower side may be positioned inwardly by the first horizontal gap gap1 from the end of the black pixel defining layer 380 .

[0599] However, the stacked structure of the plurality of color filters 230R, 230G, and 230B as described above may be changed in various ways.

[0600] Fig.16 The embodiment shows one of various stacking structures.

[0601] Fig.16 There is a stacked structure in which the red color filter 230R is located at the bottom, the blue color filter 230B is located above the red color filter 230R, and the green color filter 230G is located at the top.

[0602] In addition, the red color filter 230R has the narrowest additional opening in the cross-sectional view, so that the additional opening of the red color filter 230R may correspond to the additional opening OPCF- 1 of the plurality of color filters 230R, 230G, and 230B.

[0603] The blue filter 230B may have an additional opening whose area in plan view is larger than that of the red filter 230R, and the green filter 230G may have an additional opening whose area in plan view is larger than that of the red filter 230R and the blue filter 230B.

[0604] refer to Fig. 15B and Fig.16, the additional opening of the color filter located at the bottom of the multiple color filters 230R, 230G and 230B is formed to be the narrowest, the additional opening of the color filter located at the top of the multiple color filters 230R, 230G and 230B is formed to be the largest, and the additional opening of the color filter located in the middle of the multiple color filters 230R, 230G and 230B can be formed to have a medium size.

[0605] exist Fig.16 In the example, Fig. 15B As in the embodiment, the end of the cathode located on the inclined surface of the black pixel defining layer 380 is aligned with at least the end of the blue filter 230B among the three filters 230R, 230G and 230B and can be located inside the end of the red filter 230R, and can be located outside the end of the green filter 230G.

[0606] That is, the cathode Cathode located on the inclined surface of the black pixel defining layer 380 has a structure that is shielded by the blue color filter 230B and the red color filter 230R in a plan view. Fig. 20 This is because the blue filter 230B and the red filter 230R overlap in a plan view, which can block most of the light, thereby playing a role equivalent to a light blocking layer.

[0607] On the other hand, depending on the embodiment, the number of color filters included in the plurality of color filters is not necessarily three.

[0608] Fig.17 One of the embodiments (an embodiment using two color filters) is shown in FIG.

[0609] exist Fig.17 In the embodiment of FIG. 1 , the plurality of color filters include only the red color filter 230R and the blue color filter 230B, and do not include the green color filter 230G.

[0610] Depending on the embodiment, color filters of different colors may not be included, and only one color filter may be used.

[0611] Fig.17 The embodiment has a stacked structure in which the red color filter 230R is located at the bottom and the blue color filter 230B is located above the red color filter 230R.

[0612] In addition, the red color filter 230R has the narrowest additional opening, so that the additional opening of the red color filter 230R may correspond to the additional opening OPCF- 1 of the plurality of color filters 230R and 230B.

[0613] The blue color filter 230B may have an additional opening having an area greater than that of the red color filter 230R in a plan view.

[0614] That is, in a cross-sectional view, the additional opening of the color filter located at the bottom among the blue color filter 230B and the red color filter 230R may be formed to be narrower than the additional opening of the color filter located at the top.

[0615] exist Fig.17 In the example, Fig. 15B As in the embodiment of the present invention, the end of the cathode Cathode located on the inclined surface of the black pixel defining layer 380 is located inside the ends of the blue color filter 230B and the red color filter 230R, and the cathode Cathode located on the inclined surface of the black pixel defining layer 380 has a structure shielded by the blue color filter 230B and the red color filter 230R in a plan view. Fig. 20 This is because the blue filter 230B and the red filter 230R overlap in a plan view, which can block most of the light, thereby playing a role equivalent to a light blocking layer.

[0616] In the above, the embodiment in which the additional opening of the upper color filter is formed larger is explained.

[0617] However, depending on the embodiment, when the upper color filter covers the lower color filter, the additional opening may be formed narrower. Fig.18 The embodiment of FIG. 1 explains this structure.

[0618] according to Fig.18 , the blue color filter 230B located at the top has a structure covering the side or end of the red color filter 230R located at the bottom.

[0619] As a result, the blue color filter 230B has the narrowest additional opening, so that the additional opening of the blue color filter 230B may correspond to the additional opening OPCF- 1 of the plurality of color filters 230R and 230B.

[0620] The red color filter 230R may have an additional opening having an area greater than that of the blue color filter 230B in a plan view.

[0621] That is, in a plan view, the area of ​​the additional opening of the color filter located at the top of the red color filter 230R and the blue color filter 230B may be smaller than the area of ​​the additional opening of the color filter located at the bottom.

[0622] exist Fig.18 In the example, Fig. 15BAs in the embodiment of the present invention, the end of the cathode Cathode located on the inclined surface of the black pixel defining layer 380 is located inside the ends of the blue color filter 230B and the red color filter 230R, and the cathode Cathode located on the inclined surface of the black pixel defining layer 380 has a structure shielded by the blue color filter 230B and the red color filter 230R in a plan view. Fig. 20 This is because the blue filter 230B and the red filter 230R overlap in a plan view, which can block most of the light, thereby playing a role equivalent to a light blocking layer.

[0623] Fig.18 The embodiment shows a structure in which only two color filters are stacked, but depending on the embodiment, three or more color filters may be stacked, and by Fig.19 An embodiment having three color filters is explained.

[0624] and Fig.18 Compared with the embodiment, Fig.19 The embodiment further includes a green color filter 230G, wherein the green color filter 230G covers the sides or ends of the blue color filter 230B and the red color filter 230R located therebelow.

[0625] As a result, the green color filter 230G has the narrowest additional opening, so that the additional opening of the green color filter 230G corresponds to the additional opening OPCF- 1 of the plurality of color filters 230R, 230G, and 230B.

[0626] The blue filter 230B may have an additional opening having an area greater than that of the green filter 230G in a plan view, and the red filter 230R may have an additional opening having an area greater than that of the blue filter 230B in a plan view.

[0627] That is, in a plan view, the area of ​​the additional opening of the color filter located at the top may be smaller than the area of ​​the additional opening of the color filter located at the bottom.

[0628] exist Fig.19 In the example, Fig. 15B As in the embodiment of the present invention, the end of the cathode Cathode located on the inclined surface of the black pixel defining layer 380 is located inside the ends of the blue color filter 230B and the red color filter 230R, and the cathode Cathode located on the inclined surface of the black pixel defining layer 380 has a structure shielded by the blue color filter 230B and the red color filter 230R in a plan view. Fig. 20 This is because the blue filter 230B and the red filter 230R overlap in a plan view, which can block most of the light, thereby playing a role equivalent to a light blocking layer.

[0629] In addition, Fig.19 In the embodiment of Fig.18 Unlike the embodiment of FIG. 1 , in a plan view, the end of the green color filter 230G is located in the additional opening OP-1 of the black pixel defining layer 380. Fig. 20 , the green color filter 230G has little effect on color (especially black), and therefore, in a plan view, the end of the green color filter 230G may be located inside the end of the black pixel defining layer 380 .

[0630] exist Fig.12 as well as FIG. 15B to FIG. 19 , the first horizontal gap gap1 and the second horizontal gap gap2 may each have a value equal to or greater than 1 μm and equal to or less than 2 μm, and may have different values ​​depending on the embodiment.

[0631] In the following, Fig. 20 It will be shown whether the role of the light blocking layer 220 can be replaced by stacking a plurality of color filters.

[0632] Fig. 20 is a graph showing transmittance according to wavelength of a color filter.

[0633] Fig. 20 2 is a graph of transmittance with respect to wavelength of each color filter 230R, 230G, 230B, so that light within the wavelength range indicated by the high points passes through.

[0634] refer to Fig. 20 Each of the color filters 230R, 230G, 230B has a transmittance of less than 10% for a portion other than a wavelength band passing therethrough, and it can be confirmed that when three or two color filters overlap in a plan view, there is almost no wavelength band in which light is transmitted.

[0635] Therefore, it can be confirmed that the role of the light blocking layer 220 can be achieved by FIG. 15B to FIG. 19 The multiple color filters shown in FIG. 1 are overlapped in a plan view instead.

[0636] In the above, it is explained Fig.11 The plane structure.

[0637] However, the planar structure of the first optical sensor region OPS1 may have the same Fig.11 The structure of the different structures, and in the following, will be through Fig.21 Look at the first optical sensor region OPS1 which has another planar structure.

[0638] Fig.21 is a plan view of a first optical sensor region of a first component region according to another embodiment.

[0639] because Fig.21 It is a plan view, and thus the structure of each color filter 230R, 230G, 230B is not clearly shown, and thus reference numerals are assigned to each boundary line.

[0640] in addition, Fig.21 An opening OP of the black pixel defining layer 380 of the structure where the upper portion of the light emitting diode displaying an image is located in and around the first optical sensor region OPS1 in the first component area EA1 is shown.

[0641] exist Fig.21 , four openings OP of the black pixel defining layer 380 are shown, each having one light emitting layer displaying red (R), one light emitting layer displaying blue (B), and two light emitting layers displaying green (G).

[0642] Among the openings OP of the black pixel defining layer 380 , the openings OPR of the red color filter 230R and the openings OPB of the blue color filter 230B are located above a portion corresponding to the light emitting layer displaying green (G), and only the green color filter 230G remains.

[0643] Among the openings OP of the black pixel defining layer 380 , the openings OPG of the green filter 230G and the openings OPB of the blue filter 230B are located above a portion corresponding to the light emitting layer displaying red (R), and only the red filter 230R remains.

[0644] In addition, among the openings OP of the black pixel defining layer 380 , the openings OPR of the red filter 230R and the openings OPG of the green filter 230G are located above a portion corresponding to the light emitting layer displaying blue (B), and only the blue filter 230B remains.

[0645] On the other hand, the additional opening OP-1 of the black pixel defining layer 380 is located in the first optical sensor area OPS1, and the additional opening OPG-1 of the green filter 230G, the additional opening OPR-1 of the red filter 230R, and the additional opening OPB-1 of the blue filter 230B are located above the additional opening OP-1, so that light can pass therethrough without being blocked.

[0646] At this time, Fig.21 In the embodiment, the additional opening OPB-1 of the blue filter 230B and the additional opening OPR-1 of the red filter 230R are formed to be narrower than the opening OP-1 in the cross-sectional view, so that the black pixel defining layer 380 is shielded by the blue filter 230B and the red filter 230R in the plan view and is not visible from the front.

[0647] exist Fig.21 , the additional opening OP-1 of the black pixel defining layer 380 is shown as a dotted line, thereby indicating that the black pixel defining layer 380 is shielded by the blue color filter 230B and the red color filter 230R in a plan view.

[0648] As a result, external light is not reflected from the cathode positioned on the inclined surface of the black pixel defining layer 380, and thus the location of the additional opening OPBM-1 of the light blocking layer 220 is not visible to the user's eyes.

[0649] exist Fig.21 , the additional opening OP-1 of the black pixel defining layer 380, the additional opening OPB-1 of the blue color filter 230B, and the additional opening OPR-1 of the red color filter 230R have a circular shape, and the additional opening OPG-1 of the green color filter 230G has a square shape.

[0650] In other words, at least one of the additional openings OPR-1, OPG-1, and OPB-1 respectively located in the plurality of color filters 230R, 230G, and 230B may have a different planar shape from each other, and the planar shapes of the additional openings OPR-1, OPG-1, and OPB-1 may be a circular shape, an elliptical shape, a polygonal shape, or a combination of these shapes. As used herein, a “planar shape” is a shape in a plan view.

[0651] On the other hand, depending on the embodiment, the additional openings OPR-1, OPG-1 and OPB-1 may have the same Fig.21 The plane shape is different from the plane shape.

[0652] The additional opening OPR- 1 , OPG- 1 or OPB- 1 of each color filter 230R, 230G or 230B is formed larger than the additional opening OP- 1 of the black pixel defining layer 380 so as not to block light from the additional opening OP- 1 of the black pixel defining layer 380 .

[0653] In addition, depending on the embodiment, the additional openings OPR-1, OPG-1 and OPB-1 of each color filter 230R, 230G or 230B are formed to be smaller than the additional opening OP-1 of the black pixel defining layer 380, thereby blocking the light from the additional opening OP-1 of the black pixel defining layer 380.

[0654] Between the opening OP of the black pixel defining layer 380 and the additional opening OP-1 (i.e., above the portion where the black pixel defining layer 380 is provided), a plurality of color filters 230R, 230G and 230B are provided, and in addition to the portion where the openings OPR, OPG, OPB and the additional openings OPR-1, OPG-1 and OPB-1 are provided, a plurality of color filters 230R, 230G and 230B may be provided.

[0655] The first component area EA1 including the first optical sensor area OPS1 in the above-described various embodiments is surrounded by the display area DA, and in various embodiments, a boundary between the first component area EA1 and the display area DA may be formed such that the boundary is not recognized, which will be discussed below.

[0656] Figure 22 to Figure 24 is a schematic plan view of a first component region according to an embodiment.

[0657] Figure 22 to Figure 24 The first component area EA1 is schematically shown, and the boundary with the display area DA located around it is clearly shown.

[0658] The first optical sensor area OPS1 is located in the first component area EA1, and when the first optical sensor area OPS1 is visible, the display area DA and the display quality are differently recognized, and the first component area EA1 may be recognized by the user.

[0659] However, the light blocking layer or color filter is formed to have an additional opening narrower than the additional opening OP-1 of the black pixel defining layer 380 in a cross-sectional view, so the cathode on the black pixel defining layer 380 is not exposed and the first optical sensor region OPS1 is not easily visible.

[0660] Results, such as Fig. 22 As shown in FIG. 1 , the first optical sensor area OPS1 may be formed in the first element area EA1 at a constant density and / or pitch.

[0661] In other words, Fig. 22 , the first component area EA1 is marked with a specific hatching, which indirectly indicates that the density and / or pitch of the first optical sensor areas OPS1 located in the first component area EA1 is constant.

[0662] However, according to an embodiment, the boundary between the display area DA and the first component area EA1 may be formed by changing the density and / or pitch of the first optical sensor areas OPS1 located in the first component area EA1 so that the user cannot recognize the boundary between the display area DA and the first component area EA1. Fig.23 and Fig.24To explain.

[0663] refer to Fig.23 In the embodiment, a first component area EA1 is divided into three areas labeled as 1-1 component area EA1-1, 1-2 component area EA1-2 and 1-3 component area EA1-3.

[0664] Here, the closer the component area is to the display area DA, the smaller the density and / or size of the first optical sensor area OPS1 is.

[0665] That is, the density and / or size of the first optical sensor area OPS1 of the 1-1 component area EA1-1 is the largest, the density and / or size of the first optical sensor area OPS1 of the 1-2 component area EA1-2 may have an intermediate value, and the density and / or size of the first optical sensor area OPS1 of the 1-3 component area EA1-3 may have a minimum value.

[0666] exist Fig.23 In the figure, the same color represents the first optical sensor areas OPS1 of the same density and / or size, and the darker the color, the smaller the density and / or size of the first optical sensor areas OPS1, indicating a smaller transmission area.

[0667] Fig.24 is shown in more detail Fig.23 Diagram of the structure.

[0668] exist Fig.24 , a portion where the first optical sensor area OPS1 is provided and a portion where the second optical sensor area OPS2 is provided in each component area are divided by color and displayed.

[0669] Here, the first optical sensor area OPS1 and the second optical sensor area OPS2 may be respectively Fig.10 . ...

[0670] exist Fig.24 In the embodiment, only the first optical sensor area OPS1 is set in the 1-1 component area EA1-1 (hereinafter, referred to as "1 cycle") without setting the second optical sensor area OPS2, and in the 1-2 component area EA1-2, the first optical sensor area OPS1 and the second optical sensor area OPS2 are set in half (hereinafter, referred to as "1 / 2 cycle"). In the 1-3 component area EA1-3, the first optical sensor area OPS1 is set in one of every four (hereinafter, referred to as "1 / 4 cycle"), and the remaining three are set in the second optical sensor area OPS2.

[0671] Fig.24 An example of an embodiment is shown, and although the first optical sensor area OPS1 and the second optical sensor area OPS2 may be arranged in different numbers, the density of the first optical sensor area OPS1 decreases and the density of the second optical sensor area OPS2 increases as it approaches the display area DA.

[0672] Fig.24 The structure of FIG. 1 only uses squares to show the existence of the first optical sensor area OPS1 and the second optical sensor area OPS2. This will be shown by Fig.25 and Fig.26 is explained in more detail.

[0673] Fig.25 and Fig.26 is a plan view of a first component region according to an embodiment.

[0674] exist Fig.25 In, with Fig.24 The first optical sensor region OPS1 is shown as a component region formed with a "1 / 2 period" and corresponds to the 1-2 component region EA1-2. Fig.26 In, with Fig.24 Corresponding to the 1-3 component areas EA1-3, the first optical sensor area OPS1 is shown as a component area formed with a "1 / 4 period".

[0675] Fig.25 and Fig.26 The planar positional relationship of the black pixel defining layer 380 , the light blocking layer 220 , and the color filter 230 in the first component region is shown.

[0676] On the other hand, depending on the embodiment, a pixel defining layer formed of a highly transparent material may be used instead of the black pixel defining layer 380 .

[0677] Here, as a material having high transparency, a general polymer such as polystyrene (PS) or an imide polymer (e.g., polyimide (PI)) can be used. In addition, an organic insulating material such as polymethyl methacrylate (PMMA), a polymer derivative having a phenolic group, an acrylic polymer, and a siloxane polymer can be used.

[0678] Specifically, the light blocking layer 220 includes the opening OPBM, and the opening OPBM may be formed to be wider while overlapping the opening OP of the black pixel defining layer 380 in a plan view.

[0679] Color filters 230R, 230G, and 230B are positioned on the light blocking layer 220 .

[0680] The color filters 230R, 230G, and 230B have a structure filling the opening OPBM of the light blocking layer 220 , and may be formed to be wider than the opening OPBM of the light blocking layer 220 in a plan view.

[0681] exist Fig.25 and Fig.26 , each color filter 230R, 230G, 230B is shown in a different shade so that it can be easily distinguished.

[0682] Next, an upper structure in the auxiliary optical sensor area OPS of the first component area EA1 will be explained.

[0683] First, an upper structure of a first optical sensor region OPS1 (transmissive optical sensor region) through which light passes may be as follows.

[0684] In the first optical sensor region OPS1 , an additional opening OP- 1 is formed in the black pixel defining layer 380 , and an additional opening OPBM- 1 is formed in the light blocking layer 220 .

[0685] As a result, there is no light blocking structure in the first optical sensor region OPS1 due to the additional opening OPBM- 1 of the light blocking layer 220 and the additional opening OP- 1 of the black pixel defining layer 380 .

[0686] As a result, even if a sensor (including an optical sensor, an infrared sensor, etc.) is placed on the back side of the display panel DP, the front side of the display panel DP can be sensed using light.

[0687] exist Fig.25 and Fig.26 In FIG. 1 , since light can pass through the first optical sensor area OPS1, the first optical sensor area OPS1 is shown in white.

[0688] On the other hand, the upper structure of the second optical sensor area OPS2 (non-transmissive optical sensor area) through which light does not pass may be as follows.

[0689] In the second optical sensor region OPS2, there is no additional opening OP-1 formed in the black pixel defining layer 380, and no additional opening OPBM-1 is formed in the light blocking layer 220. Therefore, the second optical sensor region OPS2 has a structure in which light is blocked by the black pixel defining layer 380 and / or the light blocking layer 220.

[0690] exist Fig.25 and Fig.26, since the additional openings OP-1 and OPBM-1 located in the second optical sensor area OPS2 are not provided, the additional openings OP-1 and OPBM-1 are indicated by only dotted lines, and since the light blocking layer 220 is provided, the light blocking layer 220 is marked with a color other than white.

[0691] As a result, the auxiliary optical sensor area OPS in the first component area EA1 is not used for sensor operation and may be used to adjust reflectivity or reflected color.

[0692] That is, when external light is incident on the first component area EA1, some of the light is reflected. In order to configure the first component area EA1 to correspond to the reflectivity or reflected color of the display area DA, the first optical sensor area OPS1 is used, and the number and arrangement of the first optical sensor area OPS1 and the second optical sensor area OPS2 are adjusted.

[0693] As a result, a sensor located behind the first component area EA1 can detect the front of the light-emitting display device, and additionally, the color of light reflection in the first component area EA1 is improved and the display area DA and the first component area EA1 can be similar in reflectivity or reflection color reduction.

[0694] As a result, the user cannot distinguish the display area DA from the first component area EA1.

[0695] exist Fig.25 and Fig.26 , the color filters 230R, 230G, and 230B are located only in regions corresponding to the opening OP of the black pixel defining layer 380 and the opening OPBM of the light blocking layer 220 .

[0696] As a result, Fig.25 and Fig.26 In the embodiment of FIG. 5 , the color filters 230R, 230G, and 230B have a circular shape corresponding to the shape of the opening OP of the black pixel defining layer 380 and the shape of the opening OPBM of the light blocking layer 220 .

[0697] However, depending on the embodiment, the color filters 230R, 230G, and 230B may have various shapes, and may have a shape that does not correspond to the shape of the opening OP of the black pixel defining layer 380 and the shape of the opening OPBM of the light blocking layer 220 .

[0698] Next, we will Fig. 27 The planar shapes of the color filters 230R, 230G, and 230B having another structure are explained.

[0699] Fig. 27 is a plan view of a first component region according to another embodiment.

[0700] Fig. 27 is a configuration in which the color filters 230R, 230G, and 230B have a planar shape corresponding to a rhombus shape. Fig.25 The modification view of

[0701] Specifically, each of the color filters 230R, 230G, and 230B has a diamond shape covering the opening OP of the corresponding black pixel defining layer 380 and the opening OPBM of the light blocking layer 220 .

[0702] Each of the color filters 230R, 230G, and 230B does not cover the first optical sensor region OPS1 in a plan view, and thus a boundary of each of the color filters 230R, 230G, and 230B may be located along a boundary of the first optical sensor region OPS1.

[0703] At this time, the boundaries between the first optical sensor area OPS1 and the color filters 230R, 230G, and 230B may have the same FIG. 15B to FIG. 19 The structure of one of the embodiments is the same as the structure of the other embodiment.

[0704] On the other hand, at least one of the color filters 230R, 230G, and 230B may have a structure covering the second optical sensor area OPS2.

[0705] exist Fig. 27 , the boundary between adjacent color filters 230R, 230G, and 230B is shown as a single line, and adjacent color filters 230R, 230G, and 230B are shown in a structure in contact with each other. However, depending on the embodiment, adjacent color filters 230R, 230G, and 230B are shown as a single line, and color filters 230R, 230G, and 230B may have a structure formed when at least partially overlapping each other in a plan view.

[0706] In addition, depending on the embodiment, it may have a structure in which at least two color filters 230R, 230G, and 230B are overlapped in a plan view instead of the light blocking layer 220 (see FIG. 21 ). Fig.33 ).

[0707] In the following, we will Fig.28 View in table Fig.23 and Fig.24 Various embodiments of the first component area EA1 of embodiments.

[0708] Fig.28 is a table classifying structures of the first component region according to the embodiments.

[0709] refer to Fig.28, not only an embodiment of changing the period of the first optical sensor area OPS1 in each of the three component areas EA1-1, EA1-2 and EA1-3, but also an embodiment of changing the area of ​​the first optical sensor area OPS1 or changing the period and the area together is described.

[0710] exist Fig.28 In the figure, “aperture ratio” represents the ratio of the area through which light can pass to the entire area of ​​the first component area EA1, “OPS1 area” represents the area of ​​one first optical sensor area OPS1, the period refers to the period of the first optical sensor area OPS1, and the transmittance represents the transmittance of light with a wavelength of 550nm at which it is transmitted through the first optical sensor area OPS1 in the first component area EA1.

[0711] refer to Fig.28 , an embodiment of changing the period is an embodiment in which the "OPS1 area" is constant but the "aperture ratio" and transmittance of the three component areas EA1-1, EA1-2 and EA1-3 are adjusted by changing the period.

[0712] On the other hand, even if the period of the first optical sensor area OPS1 is constant, an embodiment of changing the "OPS1 area" is an embodiment of adjusting the "aperture ratio" and transmittance of the three component areas EA1-1, EA1-2 and EA1-3 using the "OPS1 area".

[0713] On the other hand, in an embodiment in which the period and "OPS1 area" are combined and applied, while changing both "OPS1 area" and the period, the "aperture ratio" and transmittance of the three component areas EA1-1, EA1-2 and EA1-3 are adjusted.

[0714] exist Fig.28 In the embodiment of the combined period and "OPS1 area", the 1-1 component area EA1-1 and the 1-2 component area EA1-2 have the same "OPS1 area", but the period is changed to adjust the "aperture ratio" and transmittance, and the 1-2 component area EA1-2 and the 1-3 component area EA1-3 have the same period, but the "OPS1 area" is changed to adjust the "aperture ratio" and transmittance.

[0715] However, various embodiments may be applied differently.

[0716] The number, period, and position of the first optical sensor regions OPS1 may be formed in various manners depending on the embodiment.

[0717] In addition, since whether a sensor located at the back side of the first component area EA1 can detect the front surface is determined depending on the first optical sensor area OPS1, the minimum number, arrangement, etc. of the first optical sensor area OPS1 may be determined so as to have transmittance required for sensor operation.

[0718] In this embodiment, the auxiliary optical sensor area OPS is formed adjacent to all pixel circuit units located in the first component area EA1, and the number of the first optical sensor areas OPS1 may be equal to or less than the number of the second optical sensor areas OPS2.

[0719] That is, the first component area EA1 has Fig.24 As shown in , a 1 / 2 period in which one second optical sensor area OPS2 is formed for one first optical sensor area OPS1, or the first component area EA1 has a 1 / 4 period in which three second optical sensor areas OPS21 are formed for one first optical sensor area OPS1, or the first component area EA1 has a 3 / 8 period in which five second optical sensor areas OPS2 are formed for three first optical sensor areas OPS1, or the first component area EA1 has a 1 / 8 period in which seven second optical sensor areas OPS2 are formed for one first optical sensor area OPS1. Alternatively, the first component area EA1 may have a 1 / 9 period in which eight second optical sensor areas OPS2 are formed for one first optical sensor area OPS1.

[0720] In such Fig.28 In various embodiments, such as Fig.11 , Fig.12 as well as FIG. 15B to FIG. 19 As shown in FIG. 1 , the cathode positioned on the inclined surface of the black pixel defining layer 380 is shielded by the light blocking layer 220 or at least one color filter, and has a structure that prevents external light from being reflected.

[0721] Hereinabove, the structure of the first component area EA1 has been explained, and according to an embodiment, such an arrangement of the first optical sensor area OPS1 and the second optical sensor area OPS2 may also be applied in the second component area EA2.

[0722] On the other hand, depending on the embodiment, a separate buffer area BUA is formed between the first component area EA1 and the display area DA to prevent the boundary between the first component area EA1 and the display area DA from being recognized, and such an embodiment will be Fig.29 and Fig.30 To explain.

[0723] Fig.29is a schematic plan view of a first component region and its surrounding area according to another embodiment, and Fig.30 yes Fig.29 Schematic cross-sectional view of a first component region and its surrounding area.

[0724] refer to Fig.29 , the buffer area BUA is located between the first component area EA1 and the display area DA.

[0725] exist Fig.29 , the first component area EA1 is shown as a circular shape, but may have a structure of a straight line including a bend like the buffer area BUA.

[0726] Here, depending on the embodiment, the buffer area BUA may have a value between the period value or area value of the first optical sensor area OPS1 and the period value or area value of the second optical sensor area OPS2, compared with the first component area EA1 and the display area DA, and may be an area having an intermediate value between the above period value and area value.

[0727] refer to Fig.30 , showing that according to Fig.29 1 is a schematic cross-sectional structure of a light-emitting display device of an embodiment of the present invention, and only a lower structure of the light-emitting display device is schematically illustrated by illustrating a display substrate 110.

[0728] refer to Fig.30 The first optical element ES1 is located at the back side of the first component area EA1, and through the first optical sensor area OPS1 located in the first component area EA1, the first optical element ES1 can detect the front side of the light-emitting display device.

[0729] The buffer area BUA is located between the first component area EA1 and the display area DA.

[0730] Here, in order to prevent the user from identifying the boundary between the first component area EA1 and the display area DA, the buffer area BUA uses the reflectivity or reflection color of the display area DA and the reflectivity or reflection color of the first component area EA1, and the buffer area BUA can be a region formed to have an intermediate value of the above reflectivity or reflection color.

[0731] Depending on the embodiment, the additional openings may be positioned to have a structure similar to that of the first optical sensor area OPS1 described above, and a period or area of ​​the additional openings may be smaller than a period or area of ​​the first component area EA1.

[0732] As a result, the user cannot easily recognize the boundary between the first widget area EA1 and the display area DA, and cannot distinguish the display area DA from the first widget area EA1.

[0733] Hereinafter, the first component area EA1 will be explained by focusing on the above Fig. 15B A special simulated photo of an embodiment is visible.

[0734] Fig.31 and Fig.32 is a photograph of a first component area according to an embodiment.

[0735] Fig.31 The first component area EA1-23 shown in FIG. 1 is divided into Fig.23 The three regions shown in Fig.32 Of the two first component areas shown in FIG. 1 , the first component area EA1-22 is formed by Fig. 22 The area is divided into an area as shown in FIG. 1 , and the first component area EA1-29 is as shown in FIG. Fig.29 The area shown in FIG. 1 includes an area formed by the buffer area BUA.

[0736] To show the effect, Fig.31 and Fig.32 , each of the first component areas EA1-23, EA1-22, and EA1-29 is indicated with a lead line, but without a separate lead line, the position cannot be easily confirmed.

[0737] Therefore, when the cathode Cathode positioned on the black pixel defining layer 380 is shielded by the light blocking layer 220 or the color filter 230 in a plan view, it can be confirmed that the first component area EA1 is difficult to be viewed by a user.

[0738] In the following, reference Fig.33 ,and Fig.10 Differently, an embodiment will be described in which the color filters 230R, 230G, and 230B are formed by overlapping each other in a plan view and the light blocking layer 220 is not included.

[0739] Fig.33 is a cross-sectional view of a display panel of a light emitting display device according to another embodiment.

[0740] Fig.33 The structure from the substrate 110 to the third sensing insulating layer 511 is Fig.10 The structure is the same.

[0741] Accordingly, description of the structure up to the third sensing insulating layer 511 will be omitted.

[0742] The color filters 230R, 230G, and 230B are positioned on the third sensing insulating layer 511 .

[0743] exist Fig.33In the embodiment, the light blocking layer 220 is not included, and the role of the light blocking layer 220 is performed by the overlapping color filters 230R and 230B (which may be positioned so that the color filters 230R and 230B overlap with the sensing electrodes 540 and 541 in a plan view).

[0744] The overlapping color filters 230R and 230B define openings OPCF therein, and the openings OPCF of the overlapping color filters 230R and 230B overlap with the openings OP of the black pixel defining layer 380 in a plan view.

[0745] In addition, in the cross-sectional view, the opening OPCF of the color filters 230R and 230B overlapped in the plan view may be wider than the opening OP of the black pixel defining layer 380 .

[0746] As a result, in a plan view, the anode Anode overlapping with the opening OP of the black pixel defining layer 380 (i.e., exposed by the opening OP of the black pixel defining layer 380) also overlaps with the opening OPCF of the color filters 230R and 230B, so it is possible to have a structure that is not shielded in a plan view.

[0747] This is to ensure that the anode electrode Anode and the light emitting layer EML capable of displaying an image are not shielded by the overlapping color filters 230R and 230B and the sensing electrodes 540 and 541 in a plan view.

[0748] In addition, the overlapped color filters 230R and 230B have a structure that overlaps the anode connection opening OP4 and the second lower organic layer opening but does not overlap the first lower organic layer opening in a plan view.

[0749] A color filter 230G of a different color may be located within the opening OPCF of the overlapped color filters 230R and 230B.

[0750] Depending on the embodiment, the color filters 230R, 230G, and 230B may be replaced with a color conversion layer, or may further include a color conversion layer.

[0751] The color conversion layer may include quantum dots.

[0752] A planarization layer 550 covering the color filters 230R, 230G, and 230B is located on the color filters 230R, 230G, and 230B.

[0753] The planarization layer 550 is used to planarize the upper surface of the light-emitting display device, and may be a transparent organic insulating layer including one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0754] Depending on the embodiment, a low-refractive layer and an additional planarizing layer may be further positioned on the planarizing layer 550 to improve the front visibility and light output efficiency of the light-emitting display device.

[0755] Light may be refracted through the low-refractive layer and the additional planarizing layer having high-refractive properties and emitted toward the front surface.

[0756] In this case, depending on the embodiment, the planarization layer 550 may be omitted, and the low-refractive layer and the additional planarization layer may be directly located on the color filter 230 .

[0757] In this embodiment, a polarizer is not included on top of the planarization layer 550 .

[0758] In other words, when external light is incident and reflected by the anode or the like and is visible to the user, the polarizer can play a role in preventing the display quality from being degraded.

[0759] However, in this embodiment, the side of the anode Anode is covered with a black pixel defining layer 380 to reduce the reflection level of the anode Anode, and overlapping color filters 230R and 230B are also formed to reduce the level of incident light, thereby preventing degradation of display quality due to reflection.

[0760] Therefore, a polarizer does not need to be separately formed on the front surface of the display panel DP.

[0761] Furthermore, in this embodiment, the anode Anode, which is a portion exposed through the opening OP of the black pixel defining layer 380 at which external light may be reflected, is flatly formed so that light is not asymmetrically reflected from the anode Anode.

[0762] In addition, a portion of the anode connection opening OP4 as the most uneven portion of the anode Anode is covered by the black pixel defining layer 380 and overlaps with the overlapping color filters 230R and 230B in a plan view to prevent light from being asymmetrically reflected.

[0763] On the other hand, in addition to the stacked structure of the display area DA, Fig.33 Also shown is a stacked structure of the optical sensor area OPS formed to allow light to pass through a portion of the first component area EA1.

[0764] exist Fig.33 In the embodiment of FIG. 5 , some areas in the auxiliary optical sensor region OPS are covered by the overlapping color filters 230R and 230B, and these areas are not covered by the additional openings OPCF- 1 located in the overlapping color filters 230R and 230B.

[0765] Here, the auxiliary optical sensor area OPS covered by the overlapped color filters 230R, 230B corresponds to the second optical sensor area OPS2, and the auxiliary optical sensor area OPS not covered by the overlapped color filters 230R, 230B corresponds to the first optical sensor area OPS1.

[0766] For reference, the auxiliary optical sensor area OPS is composed only of a transparent layer so that light can pass therethrough and there is no conductive layer or semiconductor layer, and the black pixel defining layer 380, the light blocking layer 220, and the color filter 230 have openings (hereinafter, referred to as additional openings) formed at positions corresponding to the optical sensor area OPS so that they do not block light.

[0767] Specifically, the buffer layer 111 , which is an inorganic insulating layer, is positioned on the substrate 110 , and the first gate insulating layer 141 and the second gate insulating layer 142 , which are inorganic insulating layers, are sequentially positioned on the buffer layer 111 .

[0768] In addition, a first interlayer insulating layer 161 , a third gate insulating layer 143 , and a second interlayer insulating layer 162 , which are inorganic insulating layers, are sequentially stacked on the second gate insulating layer 142 .

[0769] A first organic layer 181 , a second organic layer 182 , and a third organic layer 183 , which are organic insulating layers, are sequentially stacked on the second interlayer insulating layer 162 .

[0770] A functional layer FL may be located on the third organic layer 183 , and a cathode Cathode may be located on the functional layer FL.

[0771] The encapsulation layer 400 is positioned on the cathode, and the sensing insulating layers 501 , 510 , and 511 are sequentially positioned on the top of the cathode.

[0772] The encapsulation layer 400 may have a triple-layer structure including a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer, which are sequentially stacked.

[0773] In addition, all of the sensing insulating layers 501 , 510 , and 511 may be inorganic insulating layers.

[0774] The planarization layer 550 may be located on the sensing insulation layers 501 , 510 , and 511 .

[0775] The metal layer, the first semiconductor layer, the first gate conductive layer, the second gate conductive layer, the oxide semiconductor layer, the third gate conductive layer, the first and second data conductive layers, and the anode are not disposed in the auxiliary optical sensor region OPS.

[0776] In addition, the light emitting layer EML and the sensing electrodes 540 and 541 are not formed in the above-mentioned auxiliary optical sensor region OPS.

[0777] In addition, in the first optical sensor region OPS1, additional openings are formed in the black pixel defining layer 380, the light blocking layer 220, and the color filter 230, and thus the black pixel defining layer 380, the light blocking layer 220, and the color filter 230 may not be formed.

[0778] Hereinabove, the embodiment in which a total of three organic layers 181 , 182 , and 183 are formed and the anode connection opening OP4 is formed in the second organic layer 182 and the third organic layer 183 has been explained.

[0779] However, at least two organic layers may be formed, and in this case, the anode connection opening may be formed in an upper organic layer disposed away from the substrate and the lower organic layer opening may be formed in a lower organic layer disposed close to the substrate.

[0780] Next, we will Fig.34 An embodiment in which a transparent pixel defining layer is used instead of a black pixel defining layer is explained.

[0781] Fig.34 is a cross-sectional view of a display panel of a light-emitting display device according to still another embodiment.

[0782] Fig.34 is with Fig.10 3 and 4. The corresponding figure is an example in which a transparent pixel defining layer 381 is used instead of a black pixel defining layer.

[0783] To illustrate the use of the transparent pixel defining layer 381, Fig.34 A transparent pixel defining layer 381 is shown without shading.

[0784] will explain Fig.34 Examples and Fig.10 The differences between the embodiments are as follows.

[0785] The transparent pixel defining layer 381 is a pixel defining layer formed of a high transparency material, and a general polymer such as polystyrene (PS) or an imide polymer (e.g., polyimide (PI)) can be used. In addition, an organic insulating material such as polymethyl methacrylate (PMMA), a polymer derivative having a phenolic group, an acrylic polymer, a siloxane polymer, etc. can be used.

[0786] Since the transparent pixel defining layer 381 is used instead of the black pixel defining layer, the transparent pixel defining layer 381 has no openings in the first and second optical sensor regions OPS1 and OPS2 and may overlap with the first and second optical sensor regions OPS1 and OPS2 in a plan view.

[0787] Specifically, in this embodiment, the light blocking layer 220 and / or the transparent pixel defining layer 381 are located on the front side of the auxiliary optical sensor region OPS positioned between adjacent pixel circuit units. The light blocking layer 220 has an additional opening OPBM-1 overlapping with the first optical sensor region OPS1 of the auxiliary optical sensor region OPS in a plan view, but the light blocking layer 220 does not have an additional opening OPBM-1 overlapping with the second optical sensor region OPS2 of the auxiliary optical sensor region OPS in a plan view. On the other hand, since the transparent pixel defining layer 381 has high transparency, no opening is formed in the first optical sensor region OPS1 of the auxiliary optical sensor region OPS and the second optical sensor region OPS2 of the auxiliary optical sensor region OPS, and the transparent pixel defining layer 381 and the auxiliary optical sensor region OPS may have a structure in which they overlap each other in a plan view.

[0788] Although the embodiments have been described above in detail, the scope of the present invention is not limited thereto, and various modifications and improvements are possible by those skilled in the art using the basic concept of the present invention defined in the claims.

Claims

1. A light-emitting display device, comprising: a display panel comprising a display area and a component area, wherein the component area is surrounded by the display area and comprises a plurality of optical sensor areas; and an optical element, located on the rear surface of the component area, Wherein, the display area includes: a pixel defining layer defining an opening overlapping the anode in a plan view; a cathode covering the pixel defining layer; an encapsulation layer on top of the cathode; and a color filter located on the encapsulation layer and overlapping the opening of the pixel defining layer in the plan view, wherein the color filter and the pixel defining layer each extend to the component region and each define an additional opening therein corresponding to each of the plurality of optical sensor regions, and Wherein, in the plan view, the area of ​​the additional opening of the color filter is smaller than the area of ​​the additional opening of the pixel defining layer, so that in each of the optical sensor regions, a portion of the pixel defining layer is shielded by the color filter in the plan view.

2. The light emitting display device according to claim 1, wherein: In the plan view, a portion of the cathode electrode located on the inclined surface of the pixel defining layer in each optical sensor region is shielded by the color filter.

3. The light emitting display device according to claim 2, wherein: A gap between the additional opening of the pixel defining layer and the additional opening of the color filter is equal to or greater than 1 μm and equal to or less than 2 μm.

4. The light emitting display device according to claim 2, wherein: The pixel defining layer is a black pixel defining layer, and a light blocking layer is not located on top of the black pixel defining layer.

5. The light emitting display device according to claim 2, wherein: The color filter includes a red color filter and a blue color filter, The red color filter and the blue color filter each define an additional opening therein, and In the plan view, an area of ​​the additional opening of the lower color filter among the red color filter and the blue color filter is smaller than an area of ​​the additional opening of the upper color filter among the red color filter and the blue color filter.

6. The light emitting display device according to claim 2, wherein: The color filter includes a red color filter and a blue color filter, The red color filter and the blue color filter each define an additional opening therein, and An upper color filter among the red color filter and the blue color filter covers a side surface of a lower color filter among the red color filter and the blue color filter.

7. The light-emitting display device according to claim 6, wherein: In the plan view, an area of ​​the additional opening of the upper color filter among the red color filter and the blue color filter is smaller than an area of ​​the additional opening of the lower color filter among the red color filter and the blue color filter.

8. The light emitting display device according to claim 2, wherein: The color filters include a red color filter, a green color filter and a blue color filter, The red color filter, the green color filter, and the blue color filter each define an additional opening therein, The area of ​​the additional opening of the lowermost color filter among the red filter, the green filter and the blue filter is the smallest among the additional openings of the red filter, the additional openings of the green filter and the blue filter, and the area of ​​the additional opening of the uppermost color filter among the red filter, the green filter and the blue filter is the largest among the additional openings of the red filter, the additional openings of the green filter and the blue filter.

9. The light emitting display device according to claim 2, wherein: The color filters include a red color filter, a green color filter and a blue color filter, The red color filter, the green color filter, and the blue color filter each define an additional opening therein, In the plan view, at least two of the additional opening of the red color filter, the additional opening of the green color filter, and the additional opening of the blue color filter have shapes different from each other.

10. The light emitting display device according to claim 2, wherein: The component area is divided into a plurality of component areas, and Compared with component regions among the plurality of component regions disposed relatively far from the display region, component regions among the plurality of component regions disposed close to the display region have corresponding optical sensor regions with smaller density or size.

11. The light emitting display device according to claim 10, wherein: The component areas include a 1-1 component area, a 1-2 component area, and a 1-3 component area. The 1-3 component area is disposed closest to the display area and the 1-1 component area is disposed farthest from the display area, and Among the density or size of the optical sensor area of ​​the 1-1 component area, the density or size of the optical sensor area of ​​the 1-2 component area, and the density or size of the optical sensor area of ​​the 1-3 component area, the density or size of the optical sensor area of ​​the 1-1 component area is the largest, the density or size of the optical sensor area of ​​the 1-2 component area has an intermediate value, and the density or size of the optical sensor area of ​​the 1-3 component area is the smallest.

12. The light emitting display device according to any one of claims 2 to 11, wherein: The buffer area is located between the component area and the display area.

13. A light-emitting display device, comprising: a display panel comprising a display area and a component area, wherein the component area is surrounded by the display area and comprises a plurality of optical sensor areas; and an optical element, located on the rear surface of the component area, Wherein, the display area includes: a pixel defining layer defining an opening overlapping the anode in a plan view; a cathode covering the pixel defining layer; an encapsulation layer on top of the cathode; and a light blocking layer located on the encapsulation layer and defining an opening overlapping the opening of the pixel defining layer in the plan view, wherein the light blocking layer and the pixel defining layer each extend to the component region and each define an additional opening therein corresponding to each of the plurality of optical sensor regions, and Wherein, in the plan view, the area of ​​the additional opening of the light blocking layer is smaller than the area of ​​the additional opening of the pixel defining layer, so that in each optical sensor area, a portion of the pixel defining layer is shielded by the light blocking layer in the plan view.

14. The light emitting display device according to claim 13, wherein: In the plan view, a portion of the cathode electrode located on the inclined surface of the pixel defining layer in each optical sensor region is shielded by the light blocking layer.

15. The light emitting display device according to claim 14, wherein: A gap between the additional opening of the pixel defining layer and the additional opening of the light blocking layer is equal to or greater than 1 μm and equal to or less than 2 μm.

16. The light emitting display device according to claim 14, wherein: The display area further includes a plurality of color filters located in the openings of the light blocking layer.

17. The light emitting display device according to claim 16, wherein: The color filter is not located in each of the optical sensor regions.

18. The light emitting display device according to claim 14, wherein: The component area is divided into a plurality of component areas, and Compared with component regions among the plurality of component regions disposed relatively far from the display region, component regions among the plurality of component regions disposed close to the display region have corresponding optical sensor regions with smaller density or size.

19. The light emitting display device according to claim 18, wherein: The component areas include a 1-1 component area, a 1-2 component area, and a 1-3 component area. The 1-3 component area is disposed closest to the display area and the 1-1 component area is disposed farthest from the display area, and Among the density or size of the optical sensor area of ​​the 1-1 component area, the density or size of the optical sensor area of ​​the 1-2 component area, and the density or size of the optical sensor area of ​​the 1-3 component area, the density or size of the optical sensor area of ​​the 1-1 component area is the largest, the density or size of the optical sensor area of ​​the 1-2 component area has an intermediate value, and the density or size of the optical sensor area of ​​the 1-3 component area is the smallest.

20. The light emitting display device according to any one of claims 14 to 19, wherein: The buffer area is located between the component area and the display area.

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