Well killing method, device, equipment, storage medium and product

Abstract

The invention provides a well killing method, device and equipment, a storage medium and a product. The method comprises the steps of obtaining high-pressure formation pressure and low-pressure formation pressure in response to the phenomenon of upward spraying and downward leakage in a shaft; according to the high-pressure formation pressure and the low-pressure formation pressure, the expansion substance adding proportion and the target well killing fluid density are determined; performing well killing on the shaft by adopting the target well killing fluid with the target well killing fluid density; the expanding substance is uniformly distributed in the target well killing fluid; the wellbore temperature of the wellbore in the stratum is in positive correlation change along with the depth; the density of the target well killing fluid changes in a positive correlation mode along with the temperature of the shaft due to the fact that the target well killing fluid has expansion substances in the shaft, so that the liquid column density of a high-pressure invasion layer of the shaft is higher than that of a low-pressure leakage layer. The expansion substances are distributed in the target well killing fluid, invasion of formation fluid is reduced, leakage of the target well killing fluid is also reduced, and therefore the well killing efficiency is improved.

Description

Technical Field

[0001] The present application relates to safe well control technology, and in particular to a well killing method, device, equipment, storage medium and product. Background Art

[0002] Ultra-deep oil and gas reserves are rich and are one of the important sources of oil and gas reserves and production. However, ultra-deep oil and gas development faces many challenges such as complex geological conditions, special formation properties, complex pressure layers, and the development of natural fractures. Taking the Tarim Basin as an example, there are thick gravel layers with a thickness of 4122-5833m (Bozi 1 well area) and composite salt-gypsum layers with a thickness of 3518-5969m (Keshen 10 well area). Eleven sets of pressure layers were drilled from top to bottom in the fracture-cavity marine carbonate reservoir in the platform basin area.

[0003] At present, complex geological conditions lead to special situations in which the wellbore encounters high-pressure formations in the upper part and low-pressure formations in the lower part during drilling. The wellbore's pressure fluid will seep into the high-pressure formation and leak out in the low-pressure formation, which is called the upper spraying and lower leakage phenomenon.

[0004] However, since there are both high-pressure formations above and low-pressure formations below, in some cases a large amount of well-killing fluid will enter the low-pressure formation, resulting in less well-killing fluid entering the high-pressure formation, leading to low well-killing efficiency and inability to effectively control the invasion of high-pressure formation fluids. In severe cases, it may even evolve into a major blowout accident. Summary of the invention

[0005] The present application provides a well-killing method, device, equipment, storage medium and product, which are used to solve the problems of low well-killing efficiency, invasion of high-pressure formation fluid, and loss of well-killing fluid in low-pressure leakage layers.

[0006] In a first aspect, the present application provides a well killing method, the method comprising:

[0007] In response to the phenomenon of upward blowout and downward leakage in the wellbore, high-pressure formation pressure and low-pressure formation pressure are obtained;

[0008] Determining the expansion material addition ratio and the target well killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure;

[0009] A target well-killing fluid with the target well-killing fluid density is used to kill the well; the expansion material is evenly distributed in the target well-killing fluid; the wellbore temperature of the wellbore in the formation changes positively correlated with the depth; the target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the expansion material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

[0010] In one embodiment, in response to the presence of upward blowout and downward leakage in the wellbore, obtaining the high-pressure formation pressure and the low-pressure formation pressure includes:

[0011] In response to the phenomenon of upward blowing and downward leakage in the wellbore, a first depth and a second depth are determined; the first depth is the depth corresponding to the high-pressure invasion layer in the wellbore, and the second depth is the depth corresponding to the low-pressure leakage layer; at least one pressure gauge and a noise meter are included at the first depth; at least one pressure gauge and a noise meter are included at the second depth;

[0012] Controlling the change of the density of the well-killing fluid in the wellbore from low to high, and receiving the noise data sent by the noise meter at the first depth and the second depth; no swelling material is added to the well-killing fluid;

[0013] At a second depth, in response to the noise data of the corresponding noise meter being less than a preset static threshold, receiving and determining that the pressure value corresponding to the pressure gauge at the second depth is a low-pressure formation pressure;

[0014] Continue to control the change of the density of the wellbore fluid from low to high. At the first depth, in response to the corresponding noise meter noise data being less than the preset static threshold, receive and determine that the pressure value corresponding to the pressure gauge at the first depth is the high-pressure formation pressure.

[0015] In one embodiment, in response to the presence of blowout and leakage in the wellbore, determining the first depth and the second depth includes:

[0016] In response to the phenomenon of upward spraying and downward leakage in the wellbore, the noise meter is controlled to fall from the wellhead; the wellbore carries the detection well-killing fluid;

[0017] In response to noise data received during the falling process being greater than or equal to a preset flow threshold, determining the corresponding depth to be a first depth;

[0018] The noise meter is continuously controlled to descend, and in response to the received noise data being greater than or equal to the preset flow threshold, the corresponding depth is determined to be the second depth.

[0019] In one embodiment, the method of determining the swelling material addition ratio and the target well-killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure includes:

[0020] Input the initial calculated killing fluid density and low-pressure formation pressure into the low-pressure leakage layer algorithm, and use the low-pressure leakage layer algorithm to output the initial addition ratio;

[0021] If it is determined that the initial addition ratio meets the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is determined as the target killing fluid density, and the initial addition ratio is determined as the swelling material addition ratio;

[0022] If it is determined that the initial addition ratio does not meet the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is adjusted to determine the swelling material addition ratio and the target killing fluid density.

[0023] In one embodiment, before the initial calculated killing fluid density and low-pressure formation pressure are input into the low-pressure leakage layer algorithm and the low-pressure leakage layer algorithm is used to output the initial addition ratio, the method includes:

[0024] Divide the depth from the high-pressure invasion layer to the low-pressure leakage layer into at least one segment; each segment corresponds to a depth;

[0025] determining a first temperature and a second temperature corresponding to the first depth and the second depth, respectively;

[0026] Determine a temperature profile using the first temperature and the second temperature; the temperature profile includes a temperature corresponding to at least one segment divided by depth from a high-pressure invasion layer to a low-pressure leakage layer;

[0027] The temperature corresponding to at least one segment is obtained from the temperature profile diagram, and a relationship diagram between the volume expansion rate and the temperature is generated using the temperature corresponding to the at least one segment; the relationship diagram between the volume expansion rate and the temperature includes the volume expansion rate corresponding to at least one segment temperature; the volume expansion rate is the volume expansion rate of the expansion material at different temperatures.

[0028] In one embodiment, determining that the initial addition ratio meets the requirements of the high-pressure intrusion layer includes:

[0029] Inputting the initial addition ratio into a high-voltage intrusion layer verification algorithm to output a verification result;

[0030] If the verification result is in compliance, it is determined that the initial addition ratio meets the high-voltage layer intrusion requirement.

[0031] In one embodiment, the adjusting the initially calculated killing fluid density to determine the swelling material addition ratio and the target killing fluid density includes:

[0032] Controlling the addition of barite into the initially calculated well-killing fluid to adjust the density of the initially calculated well-killing fluid;

[0033] The adjusted initial calculated well-killing fluid density and the low-pressure formation pressure are input into the low-pressure leakage layer algorithm until the adjusted initial calculated well-killing fluid density meets the requirements of the high-pressure invasion layer, the addition ratio corresponding to the requirements of the high-pressure invasion layer is determined as the expansion material addition ratio, and the adjusted initial calculated well-killing fluid density is determined as the target well-killing fluid density.

[0034] In a second aspect, the present application provides a well-killing device, the device comprising:

[0035] An acquisition module, for acquiring high-pressure formation pressure and low-pressure formation pressure in response to the presence of upward blowout and downward leakage in the wellbore;

[0036] A determination module, used to determine the expansion material addition ratio and the target well-killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure;

[0037] A well-killing module is used to kill a wellbore with a target well-killing fluid of the target well-killing fluid density; the expansion material is evenly distributed in the target well-killing fluid; the wellbore temperature of the wellbore in the formation changes positively correlated with the depth; the target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the expansion material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

[0038] In a third aspect, the present application provides an electronic device, comprising: a processor, and a memory communicatively connected to the processor;

[0039] The memory stores computer-executable instructions;

[0040] The processor executes the computer-executable instructions stored in the memory to implement the method as described in any one of the first aspects above.

[0041] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer-executable instructions, and when the computer-executable instructions are executed by a processor, they are used to implement the method as described in any one of the above-mentioned first aspects.

[0042] In a fifth aspect, the present application provides a computer program product, including a computer program, which, when executed by a processor, implements the method as described in any one of the above-mentioned first aspects.

[0043] The present application provides a well-killing method, device, equipment, storage medium and product. The electronic device first responds to the upper spraying and lower leakage phenomenon in the wellbore to obtain the high-pressure formation pressure and the low-pressure formation pressure, so as to determine the addition ratio of the expansion material and the target well-killing fluid density. Further, the target well-killing fluid with the target well-killing fluid density is used for well-killing. In the present application, the expansion material is evenly distributed in the target well-killing fluid. The wellbore temperature of the wellbore in the formation changes positively correlated with the depth. The target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the expansion material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer, thereby increasing the high-pressure invasion layer. The pressure of the entry layer is reduced, the pressure of the low-pressure leakage layer is reduced, thereby reducing the invasion of formation fluid into the high-pressure invasion layer, and also reducing the leakage of the target well-killing fluid from the low-pressure leakage layer to the low-pressure formation, thereby ensuring the pressure of the high-pressure invasion layer and improving the well-killing efficiency; in addition, in the present application, the target well-killing fluid is evenly distributed with swelling material, and the swelling material expands in volume with the change of temperature, so it can block the gap in the formation, further reducing the invasion of formation fluid and the leakage of the target well-killing fluid; in addition, in the present application, the target well-killing fluid is evenly distributed with swelling material added in an added proportion, under this addition proportion, the swelling material that has expanded in volume can better fill the gap, so the well-killing efficiency is further improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0045] Figure 1 An application scenario diagram of a well killing method provided in this application;

[0046] Figure 2 A schematic diagram of a well killing method flow chart provided in Example 1;

[0047] Figure 3 A schematic diagram of a well killing method flow chart provided in Example 2;

[0048] Figure 4 A schematic diagram of a well killing method flow chart provided in Example 3;

[0049] Figure 5 A schematic diagram of a well killing method flow chart provided in Example 4;

[0050] Figure 6 A schematic flow chart of a well killing method provided in Example 5;

[0051] Figure 7 A schematic diagram of a wellbore provided for Example 7;

[0052] Figure 8A schematic diagram of the structure of a well-killing device provided in Example 8;

[0053] Fig. 9 A schematic diagram of the structure of an electronic device provided in Example 9.

[0054] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0055] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0056] At present, complex geological conditions lead to special situations in which the wellbore encounters high-pressure formations in the upper part and low-pressure formations in the lower part during drilling. The wellbore's pressure fluid will seep into the formation fluid in the high-pressure formation and will be lost in the low-pressure formation. This is called the upper spraying and lower leakage phenomenon.

[0057] However, since there are both high-pressure formations above and low-pressure formations below, in some cases a large amount of well-killing fluid will enter the low-pressure formation, resulting in less well-killing fluid entering the high-pressure formation, thereby reducing the pressure of the high-pressure invasion layer, resulting in low well-killing efficiency and inability to effectively control the invasion of high-pressure formation fluids. In severe cases, it may evolve into a major blowout accident.

[0058] In order to solve the defects of the prior art, the inventor of the present invention has designed a new solution after creative research. The present invention provides a well killing method. In order to solve the problem of low well killing efficiency, the present invention determines the high-pressure formation pressure and the low-pressure formation pressure in response to the upper spraying and lower leakage phenomenon, thereby determining the addition ratio of the expansion material and the target well killing fluid density, and then using the target well killing fluid with the target well killing fluid density for well killing. The expansion material of the addition ratio is evenly distributed in the target well killing fluid. The volume of the expansion material will change positively with the wellbore temperature, and the wellbore temperature will also change positively with the depth, so that the volume of the expansion material will expand at different depths, so that the liquid column density of the high-pressure invasion layer is higher than the liquid column density of the low-pressure leakage layer, and then the pressure in the high-pressure invasion layer will increase, and the pressure in the low-pressure leakage layer will decrease, and then the low-pressure leakage layer reduces the leakage of the target well killing fluid, so the target well killing fluid in the high-pressure invasion layer increases, and at the same time, the pressure of the high-pressure invasion layer also increases, and then the formation fluid can be reduced from invading the high-pressure invasion layer, thereby improving the well killing efficiency. In addition, in the present application, the target well-killing fluid is uniformly distributed with swelling material, and the volume of the swelling material expands when the temperature rises, thereby further plugging the formation gaps, thereby reducing the intrusion of formation fluids and the loss of well-killing fluid; in addition, the present application determines the addition ratio of swelling material, and at this addition ratio, the volume expansion effect of the swelling material in the target well-killing fluid can be better, the filling can be better, and thus a better plugging effect can be achieved.

[0059] The following is an introduction to the application scenarios of a well-killing method, device, equipment, storage medium and product provided by the present application.

[0060] Figure 1 This is an application scenario diagram of a well killing method provided in this application. Figure 1 As shown, the application scenario diagram includes an electronic device 101.

[0061] The electronic device 101 may be any device with computing function, and the electronic device 101 may be applied in safety well control.

[0062] Specifically, the user may click on “upper spray and lower leakage phenomenon” on the electronic device 101 , so that the electronic device 101 responds to the upper spray and lower leakage phenomenon in the wellbore, thereby obtaining the high-pressure formation pressure and the low-pressure formation pressure.

[0063] Furthermore, the electronic device 101 determines the expansion material addition ratio and the target well killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure, so as to use the target well killing fluid corresponding to the target well killing fluid density to kill the wellbore. The expansion material is evenly distributed in the target well killing fluid.

[0064] In this scenario, the wellbore temperature in the formation changes positively with depth, and the target wellbore fluid density changes positively with the wellbore temperature due to the presence of swelling substances in the target wellbore fluid, which makes the liquid column density of the high-pressure invasion layer of the wellbore higher than the liquid column density of the low-pressure leakage layer.

[0065] It should be noted that when the density of the liquid column in the high-pressure invasion layer increases, the pressure of the high-pressure invasion layer also increases, thereby reducing the invasion of formation fluid into the high-pressure invasion layer and improving the well killing effect of the high-pressure invasion layer. When the density of the liquid column in the low-pressure leakage layer decreases, the pressure of the low-pressure leakage layer also decreases, thereby reducing the loss of the target well killing fluid from the low-pressure leakage layer.

[0066] It should be noted that, in the present application, when the swelling material is added and the wellbore temperature changes in a positive correlation with the depth, the swelling material in the target well-killing fluid also expands in volume, thereby sealing the gaps in the formation, further reducing the invasion of formation fluid into the high-pressure invasion layer, and reducing the loss of the target well-killing fluid into the formation in the low-pressure leakage layer, thereby further improving the well-killing efficiency.

[0067] It should be noted that adding the swelling material according to the addition ratio in the present application can achieve a better filling effect on the gaps in the formation, thereby further reducing leakage or invasion and improving the well killing efficiency.

[0068] It should be noted that in the present application, the liquid column density of the high-pressure invasion layer of the wellbore is controlled to be higher than the liquid column density of the low-pressure leakage layer, so that the pressure of the high-pressure invasion layer is greater than or equal to the sum of the high-pressure formation pressure and the minimum pressure difference for well killing, and the pressure of the low-pressure leakage layer is equal to the low-pressure formation pressure, thereby improving the well killing efficiency.

[0069] The present application provides a well killing method, which aims to solve the above technical problems in the prior art.

[0070] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0071] Embodiment 1

[0072] The execution body of Embodiments 1 to 7 of the present application is a well-killing device, which is located in an electronic device.

[0073] Figure 2 A schematic diagram of a well killing method provided in Example 1. Figure 2 As shown, specifically including:

[0074] S201, in response to the upward blowout and downward leakage phenomenon in the wellbore, obtaining the high-pressure formation pressure and the low-pressure formation pressure.

[0075] The high-pressure formation pressure refers to the pressure of the high-pressure formation.

[0076] Among them, low-pressure formation pressure refers to the pressure of the low-pressure formation.

[0077] It should be noted that, in a formation, as the depth decreases, the formation pressure decreases. The high-pressure formation is at the upper part of the formation, and the low-pressure formation is at the lower part of the formation.

[0078] It should be noted that in the well control scenario, the formation is loaded with a wellbore, and the high-pressure formation in the wellbore corresponds to the high-pressure invasion layer, and the low-pressure formation corresponds to the low-pressure leakage layer. If the well-killing fluid is injected into the wellbore, if the pressure of the low-pressure leakage layer is higher than that of the low-pressure formation, the well-killing fluid will leak from the low-pressure leakage layer to the low-pressure formation; if the pressure of the high-pressure invasion layer is lower than that of the high-pressure formation, the fluid in the high-pressure formation will invade the high-pressure invasion layer, which will cause the phenomenon of upper spraying and lower leakage.

[0079] In one approach, the pressure coefficient distribution of the formation may be determined, and then the high-pressure formation pressure and the low-pressure formation pressure may be obtained by accumulating the formation pressure.

[0080] In another way, a noise meter and a pressure gauge may be used to measure the pressures at the high-pressure formation and the low-pressure formation, thereby obtaining the high-pressure formation pressure and the low-pressure formation pressure.

[0081] S202, determining the expansion material addition ratio and the target well killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure.

[0082] The addition ratio refers to the ratio of the swelling material added to the target well-killing fluid, which can be expressed as how many grams of swelling material are added to each cubic centimeter of the target well-killing fluid.

[0083] The expanding material is a material that expands in volume as the temperature changes, such as expanded graphite, etc., which is not limited here.

[0084] The target well-killing fluid density refers to the density of the target well-killing fluid pumped into the wellbore. The target well-killing fluid is the well-killing fluid that can improve the well-killing efficiency in this application.

[0085] In one approach, the target killing fluid density may be calculated based on the low-pressure lost-water layer algorithm and the high-pressure invaded layer requirement.

[0086] S203, use a target well killing fluid with a target well killing fluid density to kill the wellbore; the swelling material is evenly distributed in the target well killing fluid; the wellbore temperature in the formation changes positively correlated with the depth; the target well killing fluid density changes positively correlated with the wellbore temperature due to the presence of swelling material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

[0087] In the present application, the expansion material is evenly distributed in the target well-killing fluid. As the depth of the wellbore increases, the wellbore temperature also increases. It can be seen that the target well-killing fluid temperature in the wellbore will also change in a positive correlation with the depth. The greater the depth, the greater the target well-killing fluid temperature, so that the expansion material distributed in the target well-killing fluid expands in volume, and the volume expansion rate of the expansion material in the low-pressure leakage layer is higher than the volume expansion rate of the expansion material in the high-pressure invasion layer, so that the volume expansion degree of the expansion material in the low-pressure leakage layer is greater than that of the expansion material in the high-pressure invasion layer, thereby making the liquid column density of the high-pressure invasion layer of the wellbore higher than the liquid column density of the low-pressure leakage layer.

[0088] Furthermore, at a higher liquid column density, the pressure of the high-pressure invasion layer is increased, so that the pressure of the high-pressure invasion layer is greater than or equal to the sum of the high-pressure formation pressure and the minimum pressure difference for well killing; in addition, at a lower liquid column density, the pressure of the low-pressure leakage layer is equal to the low-pressure formation pressure, thereby achieving well killing and improving the well killing efficiency.

[0089] The high-pressure invasion layer refers to the upper part of the wellbore in the high-pressure formation.

[0090] Among them, the low-pressure leakage zone refers to the lower part of the wellbore in the low-pressure formation.

[0091] The present embodiment provides a well killing method. In the present embodiment, the swelling material is evenly distributed in the target well killing fluid. The wellbore temperature of the wellbore in the formation changes positively with the depth. The target well killing fluid has a density that changes positively with the wellbore temperature due to the presence of the swelling material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer, thereby increasing the pressure of the high-pressure invasion layer and reducing the pressure of the low-pressure leakage layer, thereby reducing the invasion of formation fluid into the high-pressure invasion layer, and also reducing the leakage of the target well killing fluid from the low-pressure leakage layer to the low-pressure formation, thereby ensuring the pressure of the high-pressure invasion layer and improving the well killing efficiency. In addition, in the present application, the swelling material is evenly distributed in the target well killing fluid, and the swelling material expands in volume with the change of temperature, so that the gaps in the formation can be blocked, further reducing the invasion of formation fluid and the leakage of the target well killing fluid. In addition, in the present application, the swelling material of the added ratio is evenly distributed in the target well killing fluid. Under the added ratio, the swelling material that expands in volume can better fill the gaps, so the well killing efficiency is further improved.

[0092] Embodiment 2

[0093] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional way to obtain high-pressure formation pressure and low-pressure formation pressure in response to the phenomenon of upward blowing and downward leakage in the wellbore.

[0094] Figure 3 A schematic diagram of a well killing method provided in Example 2. Figure 3 As shown, specifically including:

[0095] S301, in response to the existence of upward blowing and downward leakage in the wellbore, determine the first depth and the second depth; the first depth is the depth corresponding to the high-pressure invasion layer in the wellbore, and the second depth is the depth corresponding to the low-pressure leakage layer; the first depth includes at least one pressure gauge and a noise meter; the second depth includes at least one pressure gauge and a noise meter.

[0096] In this embodiment, the depth corresponding to the center position of the high-pressure intrusion layer can be used as the first depth, and the depth corresponding to the center position of the low-pressure leakage layer can be used as the second depth.

[0097] Among them, the noise meter can collect sound data at the corresponding depth.

[0098] Among them, the pressure gauge can collect pressure data at the corresponding depth.

[0099] Among them, the noise meter and the pressure meter can be connected to the electronic equipment for communication.

[0100] S302, controlling the change of the density of the well-killing fluid in the wellbore from low to high, and receiving the noise data sent by the noise meter at the first depth and the second depth; and detecting that no swelling material is added to the well-killing fluid.

[0101] Among them, the detection well-killing fluid is a well-killing fluid used to detect the formation pressure.

[0102] It should be noted that the density of the test killing fluid initially pumped into the wellbore is relatively low.

[0103] In one embodiment, the density of the well-killing fluid is controlled to change from low to high by adding a density control substance according to a preset control amount, wherein the density control substance may be barite, or others, which are not limited here.

[0104] The preset control amount refers to the mass of the density control substance added each time. For example, 5 grams of density control substance is added each time.

[0105] Specifically, the electronic device can control the addition of barite into the detection well-killing fluid according to a preset control amount, thereby changing the density of the detection well-killing fluid.

[0106] It should be noted that the density control material is evenly added into the detection well killing fluid.

[0107] It should be noted that when a density control substance is added to the detection killing fluid, noise data sent by the noise meter at the first depth and the second depth are received once.

[0108] S303, at the second depth, in response to the corresponding noise meter noise data being less than a preset static threshold, receiving and determining that the pressure value corresponding to the pressure gauge at the second depth is a low-pressure formation pressure.

[0109] Furthermore, if the noise data corresponding to the second depth is greater than the preset static threshold, the density control material is continued to be added to change the density of the detection well-killing fluid, and the noise data corresponding to the two depths are received again, and this process is repeated until the noise data first received at the second depth is less than the preset static threshold. The electronic device receives the pressure value corresponding to the pressure gauge at the second depth at this density, and determines the pressure value as the low-pressure formation pressure.

[0110] It can be understood that in this embodiment, the density of the well-killing fluid is controlled and detected so that the well-killing fluid loss is reduced in the low-pressure leakage layer. At this time, the noise generated by the leakage in the low-pressure leakage layer is small, so a preset static threshold is set in this embodiment.

[0111] The preset static threshold is a preset sound threshold corresponding to when the well-killing fluid or formation fluid no longer flows.

[0112] It should be noted that when the noise data is less than the preset static threshold, it means that the sound of the well-killing fluid or formation fluid flow is very small at the formation depth, indicating that there is no leakage or intrusion at this time.

[0113] S304, continue to control the change of the density of the wellbore fluid from low to high. At the first depth, in response to the noise data of the corresponding noise meter being less than the preset static threshold, receive and determine that the pressure value corresponding to the pressure gauge at the first depth is the high-pressure formation pressure.

[0114] After the low-pressure formation pressure is determined, the electronic equipment continues to control the change in the density of the wellbore fluid from low to high, thereby receiving the corresponding noise data of the noise meter at the first depth, and determining that the noise data is less than the preset static threshold, and then receiving the corresponding pressure value of the pressure gauge at the second depth, and determining the pressure value as the high-pressure formation pressure.

[0115] The present embodiment provides a well-killing method. In the present embodiment, a first depth and a second depth are determined, and the density of the well-killing fluid detected in the wellbore is controlled to change from low to high. At the first depth, in response to the corresponding noise data being less than a preset static threshold, it means that the leakage of the well-killing fluid detected at this density is very small, and then the corresponding pressure value is determined to be the low-pressure formation pressure. The same method is used to determine the high-pressure formation pressure, so the above two pressures can be accurately determined in the present embodiment.

[0116] Embodiment 3

[0117] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional way to determine the first depth and the second depth in response to the phenomenon of upward spraying and downward leakage in the wellbore.

[0118] Figure 4 A schematic diagram of a well killing method provided in Example 3. Figure 4 As shown, specifically including:

[0119] S401, in response to the phenomenon of upward spraying and downward leakage in the wellbore, the noise meter is controlled to fall from the wellhead; the wellbore carries the detection well-killing fluid.

[0120] Among them, the electronic device can be connected to the noise meter through a wire, thereby controlling the descent of the noise meter.

[0121] S402: In response to noise data received during the falling process being greater than or equal to a preset flow threshold, determining that the corresponding depth is a first depth.

[0122] The preset flow threshold refers to a preset sound threshold generated by well-killing fluid loss or formation fluid invasion.

[0123] It should be noted that the noise meter continuously collects noise data during the falling process and sends the noise data to the electronic device.

[0124] Furthermore, the electronic device compares each noise data with a preset flow threshold value, and if it is determined that the noise data corresponding to a certain depth is greater than or equal to the preset flow threshold value, the depth is determined to be the first depth.

[0125] S403, continue to control the noise meter to fall, and in response to the received noise data being greater than or equal to the preset flow threshold, determine that the corresponding depth is a second depth.

[0126] In this embodiment, after the electronic device determines the first depth, it continues to control the noise meter to fall, and continues to receive the noise data sent by the noise meter at each depth. If it is determined that the corresponding noise data at a certain depth is greater than or equal to the preset flow threshold, then this depth is determined to be the second depth.

[0127] The present embodiment provides a well pressure method. In the present embodiment, a noise meter of the electronic equipment is controlled to fall, and in response to noise data being greater than or equal to a preset flow threshold, a first depth and a second depth are determined in sequence. In the present embodiment, the noise data and the preset flow threshold are used to determine the above two depths, so that the position can be determined more accurately.

[0128] Embodiment 4

[0129] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional way to determine the expansion material addition ratio and the target well-killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure.

[0130] Figure 5 A schematic diagram of a well-killing method provided in Example 4. Figure 5 As shown, specifically including:

[0131] S501, inputting the initial calculated killing fluid density and the low-pressure formation pressure into the low-pressure leakage layer algorithm, and using the low-pressure leakage layer algorithm to output the initial addition ratio.

[0132] The initially calculated well-killing fluid refers to the well-killing fluid density designed for calculating the addition ratio.

[0133] Among them, the low-pressure leakage layer algorithm is used to calculate the proportion of expansion material added.

[0134] The initial addition ratio is the addition ratio calculated based on the initial calculation of the well killing fluid. It should be noted that the initial addition ratio is not necessarily the target addition ratio, so it is also necessary to determine whether the initial addition ratio meets the requirements of the high-pressure invasion layer.

[0135] S502: If it is determined that the initial addition ratio meets the requirement of the high-pressure invasion layer, the initial calculated killing fluid density is determined as the target killing fluid density, and the initial addition ratio is determined as the swelling material addition ratio.

[0136] The high-pressure invasion layer requirement refers to the requirement that the pressure of the high-pressure invasion layer is greater than or equal to the sum of the high-pressure formation pressure and the minimum pressure difference for well killing.

[0137] S503, if it is determined that the initial addition ratio does not meet the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is adjusted to determine the swelling material addition ratio and the target killing fluid density.

[0138] In one approach, the electronic device can readjust the initial calculated well-killing fluid density, and then calculate a new addition ratio based on the new initial calculated well-killing fluid, low-pressure formation pressure, and low-pressure leakage layer algorithm to continue to determine whether the high-pressure invasion layer requirements are met, thereby determining the expansion material addition ratio and target well-killing density.

[0139] This embodiment provides a well killing method. In this embodiment, a high-pressure invasion layer requirement is set. If the high-pressure invasion layer requirement is not met, the initial calculated well killing fluid is continuously adjusted to determine the expansion material addition ratio and the target well killing fluid density, so that a reasonable addition ratio and the target well killing fluid density can be obtained, thereby improving the well killing efficiency.

[0140] Embodiment 5

[0141] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional method of inputting the initial calculated well-killing fluid density and low-pressure formation pressure into the low-pressure leakage layer algorithm and using the low-pressure leakage layer algorithm to output the initial addition ratio.

[0142] Figure 6 A schematic diagram of a well-killing method provided in Example 5. Figure 6 As shown, specifically including:

[0143] S601, dividing the depth from the high-pressure intrusion layer to the low-pressure leakage layer into at least one segment; each segment corresponds to one depth.

[0144] For example, assuming that the depth from the high-pressure intrusion layer to the low-pressure leakage layer is 100 meters, it is divided into 100 segments with one meter per segment, and the temperature corresponding to the center of each segment is the temperature of the segment.

[0145] S602, determining a first temperature and a second temperature corresponding to a first depth and a second depth, respectively.

[0146] S603, determining a temperature profile using the first temperature and the second temperature; the temperature profile includes a temperature corresponding to at least one segment divided by depth from the high-pressure intrusion layer to the low-pressure leakage layer.

[0147] In this embodiment, a temperature sensor can be used to determine the first temperature and the second temperature corresponding to the first depth and the second depth, and then depth and temperature simulation software can be used to determine the temperature profile in the formation, which includes the temperature corresponding to at least one segment.

[0148] S604, obtaining the temperature corresponding to at least one segment from the temperature profile, and using the temperature corresponding to at least one segment to generate a relationship diagram between the volume expansion rate and the temperature; the relationship diagram between the volume expansion rate and the temperature includes the volume expansion rate corresponding to at least one segment temperature; the volume expansion rate is the volume expansion rate of the expanding substance at different temperatures.

[0149] Table 1 is a graph showing the relationship between depth, temperature and volume expansion rate. As shown in Table 1, is the first depth.

[0150] Among them, the depth corresponding to the first segment is , the corresponding temperature is The volume expansion rate is , the depth corresponding to the second segment is , the corresponding temperature is T2, and the volume expansion rate is , the depth corresponding to the third segment is , the corresponding temperature is The volume expansion rate is .

[0151] Table 1

[0152]

[0153] Therefore, the temperature and volume expansion rate corresponding to each segment can be obtained according to the temperature profile and relationship diagram.

[0154] The low-pressure leakage layer algorithm in this embodiment includes the following formula:

[0155] (1)

[0156] in, is the wellbore pressure at the low-pressure leakage zone, in units ; is the low-pressure formation pressure, unit .

[0157] In this embodiment, if one wants to reduce the loss of well fluid in the low-pressure leakage layer, the wellbore pressure at the low-pressure leakage layer (ie, the low-pressure leakage layer pressure) is made equal to the low-pressure formation pressure.

[0158] (2)

[0159] in, The liquid column pressure generated by the low-pressure leakage layer pressure well fluid column, unit ; is the liquid column pressure generated by the high-pressure invading layer well fluid, unit ; The pressure of the well-killing fluid at the wellhead, in MPa; is the flow friction of the well-killing fluid, unit .

[0160] (3)

[0161] in, is the total number of segments, dimensionless; is the segment length, ; is the density of the well-killing fluid corresponding to the ith segment, .

[0162] (4)

[0163] in, is the density of the expanding substance without volume expansion, ; is the density of the well-killing fluid without adding swelling material, ; is the volume expansion rate corresponding to the i-th segment expansion material; The temperature corresponding to the i-th segment can be determined from the temperature profile, and then the volume expansion rate corresponding to the i-th segment can be obtained from the relationship diagram between the volume expansion rate and the temperature; is the addition ratio of the expansion material (i.e. the unknown number that needs to be calculated).

[0164] The initial calculated killing fluid density is the density of the killing fluid without adding swelling material. , in formula (4), , as well as All are known numbers.

[0165] (5)

[0166] in, It is the density of the well-killing fluid when the swelling material is added and no volume expansion occurs. ; is the acceleration due to gravity, ; is the first depth.

[0167] (6)

[0168] Therefore, the initial calculated killing fluid density and low-pressure formation pressure are input into the above six formulas to calculate the corresponding addition ratio of the swelling material under the initial calculated killing fluid density. , which is the initial addition ratio, and Used for verification of the following examples.

[0169] This embodiment provides a well-killing method. In this embodiment, a temperature profile is determined according to the depth, and a relationship diagram is further determined, so that the volume expansion rate corresponding to each segment can be determined.

[0170] Embodiment 6

[0171] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional way to determine the initial addition ratio to meet the requirements of the high-pressure intrusion layer, specifically including:

[0172] The initial addition ratio is input into the high-voltage intrusion layer verification algorithm to output a verification result. If the verification result is in compliance, it is determined that the initial addition ratio meets the high-voltage layer intrusion requirement.

[0173] Among them, the high-level intrusion layer verification algorithm is as follows:

[0174] (7)

[0175] in, is the wellbore pressure at the high-pressure invasion layer (i.e., the high-pressure invasion layer pressure), in units of ; is the high pressure formation pressure, unit ; is the minimum pressure difference for well killing. Among them, the minimum pressure difference for well killing is known.

[0176] (8)

[0177] in, When the addition ratio of the expansion material is The corresponding liquid column pressure generated by the high-pressure invading well fluid is ; is the flow friction of the well-killing fluid from the wellhead to the high-pressure invasion layer, in units of .in, It is the addition ratio calculated by the low-pressure leakage layer algorithm.

[0178] It should be noted that when the addition ratio of the swelling material corresponding to the initial calculation well killing fluid is calculated by the low-pressure leakage layer algorithm (i.e. the initial addition ratio), After that, Input into the above (8) to calculate the high-pressure invasion layer pressure, and then compare the high-pressure invasion layer pressure with the verification pressure to obtain the verification result. Among them, the verification pressure is the sum of the high-pressure formation pressure and the minimum pressure difference for well killing.

[0179] The verification result may be that the pressure of the high-pressure intrusion layer is greater than or equal to the verification pressure, or the verification result may be that the pressure of the high-pressure intrusion layer is less than the verification pressure.

[0180] Further, if the verification result is that the high-pressure intrusion layer pressure is greater than or equal to the verification pressure, the verification result is determined to be in compliance, and the initial addition ratio is determined to meet the high-pressure intrusion layer requirement.

[0181] If the high-pressure invasion layer pressure in the verification result is less than the verification pressure, the verification result is determined to be non-compliant, and the initial calculated killing fluid density is adjusted, that is, the killing fluid density without adding swelling material is adjusted. .

[0182] The present embodiment provides a well pressure method. In the present embodiment, a verification result is outputted through a high-pressure invasion layer verification algorithm, so as to determine whether the initial addition ratio meets the high-pressure invasion layer requirements. In the present embodiment, a high-pressure invasion layer verification algorithm is used to determine whether the initial addition ratio meets the high-pressure invasion layer requirements, so that the initial addition ratio meets the current formation well pressure requirements.

[0183] Embodiment 7

[0184] This embodiment is a further refinement of any of the above embodiments. This embodiment is an optional way to adjust the initial calculated well-killing fluid density to determine the expansion material addition ratio and the target well-killing fluid density, specifically including:

[0185] Control the addition of barite to the initially calculated well-killing fluid to adjust the density of the initially calculated well-killing fluid;

[0186] The adjusted initial calculated well-killing fluid density and the low-pressure formation pressure are input into the low-pressure leakage layer algorithm until the adjusted initial calculated well-killing fluid density meets the requirements of the high-pressure invasion layer, the addition ratio corresponding to the requirements of the high-pressure invasion layer is determined as the expansion material addition ratio, and the adjusted initial calculated well-killing fluid density is determined as the target well-killing fluid density.

[0187] In this embodiment, when adjusting the initial calculated well-killing fluid density, the electronic device may calculate the initial calculated well-killing fluid density after adding barite to the initial calculated well-killing fluid according to a preset control amount, thereby adjusting the initial calculated well-killing fluid.

[0188] Furthermore, the electronic device re-inputs the adjusted initial calculated well-killing fluid density and low-pressure formation pressure into the low-pressure leakage layer algorithm to obtain the corresponding addition ratio , and Input into the high voltage intrusion layer verification algorithm to determine the The verification result meets the requirements. If yes, then To meet the requirements of high-voltage intrusion layer, The addition ratio of the swelling material is determined, and the adjusted initial calculated well-killing fluid is determined as the target well-killing fluid density.

[0189] Furthermore, if it does not meet the requirements, the initial calculation of the well killing fluid will continue to be adjusted, and the corresponding addition ratio will continue to be calculated. , and determine whether the corresponding verification results meet the requirements, until the initial calculation of the well-killing fluid that meets the verification results is adjusted and the addition ratio of the corresponding expansion material is calculated.

[0190] Figure 7 A wellbore schematic diagram provided for Example 7. Figure 7As shown, it includes casing 701, open hole wellbore 702, high pressure formation 703, low pressure formation 704, and formation 705.

[0191] Embodiment 8

[0192] This embodiment is an apparatus embodiment. Figure 8 This is a schematic diagram of the structure of a well-killing device provided in Example 8. Figure 8 As shown, the well killing device includes:

[0193] An acquisition module 801 is used to acquire high-pressure formation pressure and low-pressure formation pressure in response to the presence of upward blowout and downward leakage in the wellbore;

[0194] A determination module 802 is used to determine the expansion material addition ratio and the target well killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure;

[0195] The well-killing module 803 is used to use a target well-killing fluid with a target well-killing fluid density to kill the wellbore; the swelling material is evenly distributed in the target well-killing fluid; the wellbore temperature in the formation changes positively correlated with the depth; the target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the swelling material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

[0196] In one embodiment, the acquisition module 801, in response to the presence of the blowout and leakage phenomenon in the wellbore, acquires the high-pressure formation pressure and the low-pressure formation pressure, and is specifically used to:

[0197] In response to the presence of upward blowing and downward leakage in the wellbore, a first depth and a second depth are determined; the first depth is the depth corresponding to the high-pressure invasion layer in the wellbore, and the second depth is the depth corresponding to the low-pressure leakage layer; at least one pressure gauge and a noise meter are included at the first depth; at least one pressure gauge and a noise meter are included at the second depth;

[0198] Controlling the change of the density of the well-killing fluid in the wellbore from low to high, and receiving the noise data sent by the noise meter at the first depth and the second depth; detecting that no swelling material is added to the well-killing fluid;

[0199] At the second depth, in response to the noise data of the corresponding noise meter being less than a preset static threshold, receiving and determining that the pressure value corresponding to the pressure gauge at the second depth is the low-pressure formation pressure;

[0200] Continue to control the change of the density of the wellbore fluid from low to high. At the first depth, in response to the corresponding noise meter noise data being less than the preset static threshold, receive and determine the pressure value corresponding to the pressure gauge at the first depth as the high-pressure formation pressure.

[0201] In one embodiment, the acquisition module 801, in response to the presence of the blowout and leakage phenomenon in the wellbore, determines the first depth and the second depth, specifically for:

[0202] In response to the phenomenon of upward spraying and downward leakage in the wellbore, the noise meter is controlled to fall from the wellhead; the wellbore carries the detection well-killing fluid;

[0203] In response to noise data received during the falling process being greater than or equal to a preset flow threshold, determining the corresponding depth to be a first depth;

[0204] The noise meter is continuously controlled to descend, and in response to the received noise data being greater than or equal to the preset flow threshold, the corresponding depth is determined to be the second depth.

[0205] In one embodiment, when determining the swelling material addition ratio and the target killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure, the determination module 802 is specifically configured to:

[0206] Input the initial calculated killing fluid density and low-pressure formation pressure into the low-pressure leakage layer algorithm, and use the low-pressure leakage layer algorithm to output the initial addition ratio;

[0207] If it is determined that the initial addition ratio meets the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is determined as the target killing fluid density, and the initial addition ratio is determined as the expansion material addition ratio;

[0208] If it is determined that the initial addition ratio does not meet the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is adjusted to determine the expansion material addition ratio and the target killing fluid density.

[0209] In one approach, before inputting the initial calculated killing fluid density and the low-pressure formation pressure into the low-pressure leakage layer algorithm and using the low-pressure leakage layer algorithm to output the initial addition ratio, the present embodiment provides a killing device, further comprising: a division module and a generation module;

[0210] A division module is used to divide the depth from the high-pressure intrusion layer to the low-pressure leakage layer into at least one segment; each segment corresponds to one depth;

[0211] The determination module 802 is further used to determine a first temperature and a second temperature corresponding to the first depth and the second depth respectively;

[0212] The determination module 802 is further configured to determine a temperature profile using the first temperature and the second temperature; the temperature profile includes a temperature corresponding to at least one segment divided by the depth from the high-pressure intrusion layer to the low-pressure leakage layer;

[0213] The acquisition module 801 is also used to obtain the temperature corresponding to at least one segment from the temperature profile diagram, and the generation module is used to generate a relationship diagram between the volume expansion rate and the temperature using the temperature corresponding to at least one segment; the relationship diagram between the volume expansion rate and the temperature includes the volume expansion rate corresponding to at least one segment temperature; the volume expansion rate is the volume expansion rate of the expansion material at different temperatures.

[0214] In one embodiment, when determining that the initial addition ratio meets the high-pressure intrusion layer requirement, the determination module 802 is specifically configured to:

[0215] Inputting the initial addition ratio into the high-voltage intrusion layer verification algorithm to output the verification result;

[0216] If the verification result is in compliance, it is determined that the initial addition ratio meets the high-voltage layer intrusion requirements.

[0217] In one embodiment, the determination module 802, when adjusting the initial calculated kill fluid density to determine the swelling material addition ratio and the target kill fluid density, is specifically configured to:

[0218] Control the addition of barite to the initially calculated well-killing fluid to adjust the density of the initially calculated well-killing fluid;

[0219] The adjusted initial calculated well-killing fluid density and the low-pressure formation pressure are input into the low-pressure leakage layer algorithm until the adjusted initial calculated well-killing fluid density meets the requirements of the high-pressure invasion layer, the addition ratio corresponding to the requirements of the high-pressure invasion layer is determined as the expansion material addition ratio, and the adjusted initial calculated well-killing fluid density is determined as the target well-killing fluid density.

[0220] Embodiment 9

[0221] Fig. 9 This is a schematic diagram of the structure of an electronic device provided in Example 9. Fig. 9 As shown, the electronic device 900 may include: a processor 901, and a memory 902 in communication with the processor 901. The memory 902 stores computer-executable instructions; the processor 901 executes the computer-executable instructions stored in the memory 902 to implement any one of the method embodiments in the above-mentioned embodiments 1 to 7, and the specific implementation methods and technical effects are similar, which will not be repeated here.

[0222] In this embodiment, the memory 902 and the processor 901 are connected via a bus. The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Fig. 9 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0223] Embodiment 10

[0224] The present application provides a computer-readable storage medium, in which computer-executable instructions are stored. When the computer-executable instructions are executed by a processor, they are used to implement any one of the method embodiments of Embodiments 1 to 7 above. The specific implementation methods and technical effects are similar and will not be repeated here.

[0225] Embodiment 11

[0226] The present application provides a computer program product, including a computer program. When the computer program is executed by a processor, it implements any one of the method embodiments of Embodiments 1 to 7 above. The specific implementation methods and technical effects are similar and will not be repeated here.

[0227] In the several embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of modules is only a logical function division, and there may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0228] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules, that is, they may be located in one place or distributed on multiple network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0229] In addition, each functional module in each embodiment of the present invention may be integrated into one processing module, or each module may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of hardware plus software functional modules.

[0230] The program code for implementing the method of the present invention can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer or other programmable interrupt processing device, so that the program code, when executed by the processor or controller, enables the functions / operations specified in the flow chart and / or block diagram to be implemented. The program code can be executed entirely on the machine, partially on the machine, partially on the machine as a stand-alone software package and partially on a remote machine, or entirely on a remote machine or server.

[0231] In the context of the present invention, a machine-readable medium may be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, device, or equipment. A machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or equipment, or any suitable combination of the foregoing. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0232] In addition, although each operation is described in a specific order, this should be understood as requiring such operation to be performed in the specific order shown or in a sequential order, or requiring that all illustrated operations should be performed to obtain desired results. Under certain circumstances, multitasking and parallel processing may be advantageous. Similarly, although some specific implementation details are included in the above discussion, these should not be interpreted as limiting the scope of the present invention. Some features described in the context of a separate embodiment can also be implemented in a single implementation in combination. On the contrary, the various features described in the context of a single implementation can also be implemented in multiple implementations individually or in any suitable sub-combination mode.

[0233] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the invention disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0234] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A well killing method, characterized in that: The method comprises: In response to the phenomenon of upward blowout and downward leakage in the wellbore, high-pressure formation pressure and low-pressure formation pressure are obtained; Determining the expansion material addition ratio and the target well killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure; A target well-killing fluid with the target well-killing fluid density is used to kill the well; the expansion material is evenly distributed in the target well-killing fluid; the wellbore temperature of the wellbore in the formation changes positively correlated with the depth; the target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the expansion material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

2. The method according to claim 1, characterized in that The step of obtaining the high-pressure formation pressure and the low-pressure formation pressure in response to the upward blowout and downward leakage phenomenon in the wellbore comprises: In response to the phenomenon of upward blowing and downward leakage in the wellbore, a first depth and a second depth are determined; the first depth is the depth corresponding to the high-pressure invasion layer in the wellbore, and the second depth is the depth corresponding to the low-pressure leakage layer; at least one pressure gauge and a noise meter are included at the first depth; at least one pressure gauge and a noise meter are included at the second depth; Controlling the change of the density of the well-killing fluid in the wellbore from low to high, and receiving the noise data sent by the noise meter at the first depth and the second depth; no swelling material is added to the well-killing fluid; At a second depth, in response to the noise data of the corresponding noise meter being less than a preset static threshold, receiving and determining that the pressure value corresponding to the pressure gauge at the second depth is a low-pressure formation pressure; Continue to control the change of the density of the wellbore fluid from low to high. At the first depth, in response to the corresponding noise meter noise data being less than the preset static threshold, receive and determine that the pressure value corresponding to the pressure gauge at the first depth is the high-pressure formation pressure.

3. The method according to claim 2, characterized in that In response to the presence of a blowout and leakout phenomenon in the wellbore, the determining of the first depth and the second depth comprises: In response to the phenomenon of upward spraying and downward leakage in the wellbore, the noise meter is controlled to fall from the wellhead; the wellbore carries the detection well-killing fluid; In response to noise data received during the falling process being greater than or equal to a preset flow threshold, determining the corresponding depth to be a first depth; The noise meter is continuously controlled to descend, and in response to the received noise data being greater than or equal to the preset flow threshold, the corresponding depth is determined to be the second depth.

4. The method according to claim 1, characterized in that: The step of determining the expansion material addition ratio and the target well-killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure includes: Input the initial calculated killing fluid density and low-pressure formation pressure into the low-pressure leakage layer algorithm, and use the low-pressure leakage layer algorithm to output the initial addition ratio; If it is determined that the initial addition ratio meets the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is determined as the target killing fluid density, and the initial addition ratio is determined as the swelling material addition ratio; If it is determined that the initial addition ratio does not meet the requirements of the high-pressure invasion layer, the initial calculated killing fluid density is adjusted to determine the swelling material addition ratio and the target killing fluid density.

5. The method according to claim 4, characterized in that Before inputting the initial calculated killing fluid density and the low-pressure formation pressure into the low-pressure leakage layer algorithm and using the low-pressure leakage layer algorithm to output the initial addition ratio, the method includes: Divide the depth from the high-pressure invasion layer to the low-pressure leakage layer into at least one segment; each segment corresponds to a depth; determining a first temperature and a second temperature corresponding to the first depth and the second depth, respectively; Determine a temperature profile using the first temperature and the second temperature; the temperature profile includes a temperature corresponding to at least one segment divided by the depth from the high-pressure invasion layer to the low-pressure leakage layer; The temperature corresponding to at least one segment is obtained from the temperature profile diagram, and a relationship diagram between the volume expansion rate and the temperature is generated using the temperature corresponding to the at least one segment; the relationship diagram between the volume expansion rate and the temperature includes the volume expansion rate corresponding to at least one segment temperature; the volume expansion rate is the volume expansion rate of the expansion material at different temperatures.

6. The method according to claim 4, characterized in that Determining that the initial addition ratio meets the requirements of the high-pressure intrusion layer includes: Inputting the initial addition ratio into a high-voltage intrusion layer verification algorithm to output a verification result; If the verification result is in compliance, it is determined that the initial addition ratio meets the high-voltage layer intrusion requirement.

7. The method according to claim 6, characterized in that The adjusting the initially calculated killing fluid density to determine the swelling material addition ratio and the target killing fluid density comprises: Controlling the addition of barite into the initially calculated well-killing fluid to adjust the density of the initially calculated well-killing fluid; The adjusted initial calculated well-killing fluid density and the low-pressure formation pressure are input into the low-pressure leakage layer algorithm until the adjusted initial calculated well-killing fluid density meets the requirements of the high-pressure invasion layer, the addition ratio corresponding to the requirements of the high-pressure invasion layer is determined as the expansion material addition ratio, and the adjusted initial calculated well-killing fluid density is determined as the target well-killing fluid density.

8. A well killing device, characterized in that: The device comprises: An acquisition module, for acquiring high-pressure formation pressure and low-pressure formation pressure in response to the presence of upward blowout and downward leakage in the wellbore; A determination module, used to determine the expansion material addition ratio and the target well-killing fluid density according to the high-pressure formation pressure and the low-pressure formation pressure; A well-killing module is used to kill a wellbore with a target well-killing fluid of the target well-killing fluid density; the expansion material is evenly distributed in the target well-killing fluid; the wellbore temperature of the wellbore in the formation changes positively correlated with the depth; the target well-killing fluid density changes positively correlated with the wellbore temperature due to the presence of the expansion material in the wellbore, so that the liquid column density of the high-pressure invasion layer of the wellbore is higher than the liquid column density of the low-pressure leakage layer.

9. An electronic device, comprising: A processor, and a memory communicatively connected to the processor; The memory stores computer-executable instructions; The processor executes the computer-executable instructions stored in the memory to implement the method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer-executable instructions, which are used to implement the method according to any one of claims 1 to 7 when executed by a processor.

11. A computer program product, comprising a computer program, wherein when the computer program is executed by a processor, the method according to any one of claims 1 to 7 is implemented.

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