Crimping type IGBT module accelerated life test device, related method and system

Abstract

The invention provides a crimping type IGBT module accelerated life test device, a related method and a system. The device comprises a press fitting mechanism used for press fitting of a tested IGBT module, a temperature control device arranged on the surface of the tested IGBT module, a cosmic ray irradiation source perpendicular to the plane of the tested IGBT module, and a voltage loading module electrically connected with the tested IGBT module. According to the device, the temperature control device, the voltage loading module and the cosmic ray irradiation source are combined to generate load stress, so that the test process can be accelerated, the IGBT device is easier to fail, and the service life of the device is easier to obtain; according to the test result, the IGBT failure rate characteristic under the special environment factor of the high altitude area and the safe working area under the allowable failure rate can be obtained; meanwhile, the temperature is adjusted through the externally arranged temperature control device, so that the temperature control is more flexible and flexible, the temperature fluctuation is more stable, and the accuracy of the test result is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor power devices, and in particular relates to a press-fit IGBT module accelerated life test device, and related methods and systems. Background Art

[0002] Since flexible DC transmission technology has the advantages of high flexibility and strong controllability, it will be the main supporting technology for the grid connection of new energy. High-voltage and high-power IGBTs are the core components of flexible DC converter valves, and their operating reliability is a key factor in determining the performance of converter valves. However, due to the special environmental factors in high-altitude areas (above 2,500 meters above sea level), high-voltage and high-power IGBTs may fail instantly when used in high-altitude areas, and the failure form is a short circuit. Therefore, it is of great significance to obtain the IGBT failure rate characteristics under working conditions and the safe working area under the allowable failure rate.

[0003] In order to obtain the failure rate characteristics of IGBT under working conditions, an accelerated life test device is generally used. Previously, there were related test devices for high-voltage thyristors, but they were applicable to thyristor wafers and not suitable for IGBT modules. At present, there is no accelerated life test device for crimped IGBT modules that takes into account the special environmental factors of high-altitude areas. Summary of the invention

[0004] In order to overcome the deficiency that the accelerated life test device in the above-mentioned prior art cannot be applied to the press-fit IGBT modules in high-altitude areas, the present invention proposes an accelerated life test device for IGBT modules, comprising: a press-fitting mechanism for press-fitting the IGBT module under test, a temperature control device arranged on the surface of the IGBT module under test, a cosmic ray irradiation source arranged perpendicular to the plane of the IGBT module under test, and a voltage loading module electrically connected to the IGBT module under test, wherein the temperature control device and the IGBT module under test are combined and press-fitted in the press-fitting mechanism.

[0005] Preferably, the temperature control device comprises a heat exchange plate arranged on the surface of the IGBT module under test, a heater and an air supply device arranged on the heat exchange plate, and a temperature measuring instrument for detecting the surface temperature of the IGBT module under test; the heat exchange plate and the IGBT module under test are combined and press-fitted in the press-fitting mechanism;

[0006] The heater is used to heat the IGBT module under test, and the air supply device is used to dissipate heat from the IGBT module under test.

[0007] Preferably, a ventilation duct is provided inside the heat exchange plate, the heater is inserted into the ventilation duct and arranged close to the surface of the tested IGBT module, and the air supply device supplies air into the ventilation duct.

[0008] Preferably, the thermometer is an infrared thermometer, and the number of the infrared thermometers is the same as the number of the heat exchange plates and they correspond one to one.

[0009] Preferably, the heater is a heating resistor.

[0010] Preferably, the press-fitting mechanism includes two oppositely arranged top pressing mechanisms and an insulating pull rod connecting the two top pressing mechanisms; a test area is enclosed between the two top pressing mechanisms and the insulating pull rod, the IGBT module under test is arranged in the test area, and the heat exchange plate and the IGBT module under test are combined and press-fitted between the two oppositely arranged top pressing mechanisms.

[0011] Preferably, an insulating isolation plate is provided between the pressing mechanism and the IGBT module under test, and the temperature control device is provided between the IGBT module under test and the insulating isolation plate.

[0012] Preferably, there are multiple IGBT modules under test in the press-fitting mechanism.

[0013] Preferably, an insulating isolation plate is provided between two adjacent IGBT modules under test.

[0014] Preferably, it also includes: a controller, wherein the controller is electrically connected to the heater, the air supply device, the temperature meter, the cosmic ray irradiation source and the voltage loading module.

[0015] Based on the same inventive concept, the present invention also provides a press-fit IGBT module accelerated life test system, comprising: the press-fit IGBT module accelerated life test device as described above, a stress loading module and a temperature control module;

[0016] The stress loading module is electrically connected to the cosmic ray irradiation source and the voltage loading module in the press-fit IGBT module accelerated life test device, and is used to start the cosmic ray irradiation source and the voltage loading module based on the test set cosmic ray radiation amount and the test set voltage loading amount, so that the cosmic ray irradiation source and the voltage loading module apply cosmic ray stress and voltage stress to the IGBT module under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount;

[0017] The temperature control module is electrically connected to the temperature control device in the crimped IGBT module accelerated life test device, and is used to start the temperature control device based on the test set temperature range, perform a heating and cooling cycle on the tested IGBT module within the test set temperature range, and monitor the temperature of the tested IGBT module in real time through the temperature control device until the tested IGBT module fails.

[0018] Preferably, the temperature control module is specifically used for:

[0019] Based on the real-time monitoring data of the thermometer in the temperature control device, when the temperature of the tested IGBT module is lower than the lower limit of the test set temperature, the heater in the temperature control device is started to heat the tested IGBT module; when the temperature of the tested IGBT module is higher than the upper limit of the test set temperature, the power of the heater is reduced, and the air supply device is started at the same time to dissipate heat and cool down, so as to perform a heating and cooling cycle on the tested IGBT module.

[0020] Based on the same inventive concept, the present invention also provides a method for accelerating the life test of a press-fit IGBT module, using the above-mentioned accelerated life test device for the press-fit IGBT module, the test method comprises:

[0021] Based on the test set cosmic ray radiation amount and the test set voltage loading amount, starting the cosmic ray irradiation source and the voltage loading module in the press-fit IGBT module accelerated life test device, applying cosmic rays and voltage to the IGBT module under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount;

[0022] Based on the test set temperature range, the temperature control device in the press-fit IGBT module accelerated life test device is started, the tested IGBT module is subjected to a heating and cooling cycle within the test set temperature range, and the temperature of the tested IGBT module is monitored in real time by the temperature control device until the tested IGBT module fails.

[0023] Preferably, the heating and cooling cycle of the tested IGBT module within the test set temperature range includes:

[0024] Based on the real-time monitoring data of the thermometer in the temperature control device, when the temperature of the tested IGBT module is lower than the lower limit of the test set temperature, the heater in the temperature control device is started to heat the tested IGBT module; when the temperature of the tested IGBT module is higher than the upper limit of the test set temperature, the power of the heater is reduced, and the air supply device is started at the same time to dissipate heat and cool down, so as to perform a heating and cooling cycle on the tested IGBT module.

[0025] Based on the same inventive concept, the present invention also provides a method for evaluating a press-fit IGBT module, comprising:

[0026] Based on the accelerated life test method of the press-fit IGBT module as described above, the test accelerated life of the tested IGBT module under the test set stress is obtained; the test set stress includes the test set cosmic ray radiation amount, the test set voltage loading amount and the test set temperature range;

[0027] Based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress exponential model, a failure characteristic evaluation model of the tested IGBT module is constructed;

[0028] The actual stress is input into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module; the actual stress includes the actual cosmic ray radiation, the actual voltage loading and the actual temperature range.

[0029] Preferably, the failure characteristic evaluation model of the tested IGBT module is constructed based on the test set stress and the corresponding test accelerated life, in combination with the Arrhenius equation and the stress exponent model, including:

[0030] Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed;

[0031] The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module is obtained.

[0032] Preferably, the failure characteristic basic evaluation model is expressed as:

[0033]

[0034] Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

[0035] Based on the same inventive concept, the present invention also provides a press-fit IGBT module evaluation system, comprising:

[0036] A data acquisition module, for acquiring the test accelerated life of the tested IGBT module under the test set stress based on the accelerated life test method of the press-fit IGBT module as described above; the test set stress includes the test set cosmic ray radiation amount, the test set voltage loading amount and the test set temperature range;

[0037] A model building module, used to build a failure characteristic evaluation model of the tested IGBT module based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model;

[0038] An evaluation module is used to input actual stress into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module; the actual stress includes actual cosmic ray radiation, actual voltage loading and actual temperature range.

[0039] Preferably, the model building module is specifically used for:

[0040] Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed;

[0041] The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module is obtained.

[0042] Preferably, the failure characteristic basic evaluation model is expressed as:

[0043]

[0044] Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

[0045] Based on the same inventive concept, the present invention also provides a computer device, including: one or more processors;

[0046] A memory for storing one or more programs;

[0047] When the one or more programs are executed by the one or more processors, the aforementioned method for accelerating life test of a press-fit IGBT module or the aforementioned method for evaluating a press-fit IGBT module is implemented.

[0048] Based on the same inventive concept, the present invention also provides a computer-readable storage device having a computer program stored thereon. When the computer program is executed, it implements a method for accelerating life testing of a press-fit IGBT module as described above or a method for evaluating a press-fit IGBT module as described above.

[0049] Compared with the closest prior art, the present invention has the following beneficial effects:

[0050] The present invention provides an IGBT module accelerated life test device and method, comprising a press-fitting mechanism for press-fitting an IGBT module under test, a temperature control device arranged on the surface of the IGBT module under test, a cosmic ray irradiation source arranged perpendicular to the plane of the IGBT module under test, and a voltage loading module electrically connected to the IGBT module under test; the device generates load stress by combining an externally heated temperature control device, a voltage loading module, and a cosmic ray irradiation source, which can accelerate the test process, make it easier for the IGBT device to fail, and make it easier to obtain the device life. According to the test results, the IGBT failure rate characteristics under special environmental factors in high-altitude areas and the safe working area under the allowable failure rate can be obtained; at the same time, temperature adjustment is performed through an externally arranged temperature control device, which can make temperature control more flexible and agile, and temperature fluctuations more stable, thereby improving the accuracy of the test results.

[0051] The present invention also provides a method and system for evaluating a crimped IGBT module, including obtaining a test accelerated life of the tested IGBT module under a test set stress based on the accelerated life test method for the crimped IGBT module as described above; the test set stress includes a test set cosmic ray radiation amount, a test set voltage loading amount and a test set temperature range; based on the test set stress and the corresponding test accelerated life, in combination with the Arrhenius equation and the stress exponent model, a failure characteristic evaluation model of the tested IGBT module is constructed; with actual stress as input, the failure characteristic evaluation model is used to output the actual life and actual failure rate of the tested IGBT module; the actual stress includes an actual cosmic ray radiation amount, an actual voltage loading amount and an actual temperature range; the method and system use the test accelerated life obtained by the accelerated life test to construct a failure characteristic evaluation model to obtain the actual life and actual failure rate under the actual operating conditions of the IGBT module, so that the evaluation result of the IGBT module is more accurate. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 A schematic diagram of the structure of an IGBT module accelerated life test device provided by the present invention;

[0053] Figure 2 for Figure 1 Left view of

[0054] Figure 3 A schematic diagram of the structure of an IGBT module accelerated life test system provided by the present invention;

[0055] Figure 4 A schematic diagram of a flow chart of an IGBT module accelerated life test method provided by the present invention;

[0056] Figure 5 A schematic diagram of a flow chart of an IGBT module evaluation method provided by the present invention;

[0057] Figure 6 A schematic diagram of the structure of an IGBT module evaluation system provided by the present invention;

[0058] Figure 7 A schematic diagram of the structure of an electronic device provided by the present invention;

[0059] Among them, 1. Tested IGBT module; 2. Cosmic ray irradiation source; 3. Heat exchange plate; 4. Insulating pull rod; 5. Pressing mechanism; 6. Insulating isolation plate; 7. Air supply device; 8. Thermometer; 9. Heater. DETAILED DESCRIPTION

[0060] The specific implementation modes of the present invention are further described in detail below with reference to the accompanying drawings.

[0061] Embodiment 1:

[0062] The present invention provides an IGBT module accelerated life test device, such as Figure 1 and Figure 2 As shown, it includes: a press-fitting mechanism for press-fitting a test IGBT module 1, a temperature control device arranged on the surface of the test IGBT module 1, a cosmic ray irradiation source 2 arranged perpendicular to the plane of the test IGBT module 1, and a voltage loading module electrically connected to the test IGBT module 1, and the temperature control device and the test IGBT module 1 are combined and press-fitted in the press-fitting mechanism.

[0063] The present invention generates load stress by combining an externally heated temperature control device, a voltage loading module (not shown in the figure), and a cosmic ray irradiation source 2, which can speed up the test process, make it easier for the tested IGBT module 1 to fail, and make it easier to obtain the device life. According to the test results, the IGBT failure rate characteristics under special environmental factors in high-altitude areas and the safe working area under the allowable failure rate can be obtained; at the same time, temperature adjustment is performed through an externally arranged temperature control device, which can make temperature control more flexible and agile, temperature fluctuations more stable, and improve the accuracy of the test results.

[0064] The present invention can simultaneously apply voltage, temperature and cosmic rays from natural (such as natural environments where cosmic rays exist in high altitude areas) and / or artificially set cosmic ray irradiation sources 2, and the voltage and temperature can be linearly adjusted.

[0065] Among them, considering that in the prior art, heat is generated by controlling the opening and closing of the IGBT itself, there will be power and temperature shocks, and the temperature fluctuations will be too large; this device adjusts the temperature by controlling an externally set temperature control device, which can make the temperature control more flexible and agile, the temperature fluctuations more stable, and improve the accuracy of the test results.

[0066] In addition, the voltage loading module applies voltage to the IGBT module 1 under test, which can generate an electric field in the IGBT module 1 under test. With the electric field, combined with temperature and cosmic rays, it is possible to simulate the rapid failure of the IGBT module 1 under test in the special environment of high altitude areas, thereby quickly conducting an accelerated life test on the IGBT module 1 under test to obtain parameters such as the failure rate and life of the IGBT module 1 under test.

[0067] In this embodiment, the temperature control device includes a heat exchange plate 3 arranged on the surface of the IGBT module 1 under test, a heater 9 and an air supply device 7 arranged on the heat exchange plate 3, and a temperature measuring instrument 8 for detecting the surface temperature of the IGBT module 1 under test; the heat exchange plate 3 and the IGBT module 1 under test are combined and press-fitted in the press-fitting mechanism;

[0068] The heater 9 is used to heat the IGBT module 1 under test, and the air supply device 7 is used to dissipate heat from the IGBT module 1 under test.

[0069] It should be noted that if Figure 1 As shown, the heat exchange plates 3 are arranged on the upper and lower sides of the tested IGBT module 1, and the heaters 9 are also arranged on the upper and lower sides of the tested IGBT module 1 accordingly. The temperature measuring instrument 8 and the heater 9 are arranged on the same layer to facilitate rapid and accurate temperature measurement.

[0070] In this embodiment, a ventilation duct is provided inside the heat exchange plate 3 , the heater 9 is inserted into the ventilation duct and arranged close to the surface of the tested IGBT module 1 , and the air supply device 7 supplies air into the ventilation duct.

[0071] It should be noted that the interior of the heat exchange plate 3 is a cavity channel, and a plurality of ventilation ducts are formed by arranging fins. The air supply device 7 supplies air into the ventilation duct to achieve heat dissipation. The heater 9 is evenly arranged on one side of the ventilation duct close to the tested IGBT module 1, and does not occupy the entire space of the ventilation duct. The heater 9 is controlled to be turned on so that the tested IGBT module 1 is evenly heated, thereby achieving the application of thermal stress.

[0072] In this embodiment, the air supply device 7 is a fan.

[0073] In this embodiment, the thermometers 8 are infrared thermometers, and the number of the infrared thermometers is the same as that of the heat exchange plates 3 and they correspond one to one.

[0074] In this embodiment, the heater 9 is a heating resistor.

[0075] It should be noted that by adjusting the temperature through the heating resistor, the linear control of the temperature of the tested IGBT module 1 can be achieved, so that the temperature control in the accelerated life test is more flexible and the temperature fluctuation is more stable, thereby improving the accuracy of the test results.

[0076] In this embodiment, the pressing mechanism includes two oppositely arranged pressing mechanisms 5 and an insulating pull rod 4 connecting the two pressing mechanisms 5; a test area is enclosed between the two pressing mechanisms 5 and the insulating pull rod 4, the tested IGBT module 1 is arranged in the test area, and the heat exchange plate 3 and the tested IGBT module 1 are combined and pressed between the two oppositely arranged pressing mechanisms 5.

[0077] It should be noted that the insulating pull rod 4 and the two pressing mechanisms 5 form a structure similar to a reaction frame, which applies a force to the IGBT module 1 under test, thereby simulating the installation of a press-fit IGBT.

[0078] In this embodiment, an insulating isolation plate 6 is provided between the pressing mechanism 5 and the IGBT module 1 under test, and the temperature control device is provided between the IGBT module 1 under test and the insulating isolation plate 6 .

[0079] In this embodiment, the insulating isolation plate 6 in contact with the pressing mechanism 5 can serve as the installation base for the heat exchange plate 3 and the air supply device 7, so that the test device has better integrity and the structural connection is more stable during the test.

[0080] In this embodiment, the number of the IGBT modules 1 under test in the press-fitting mechanism is multiple.

[0081] like Figure 1 As shown, the number of the IGBT modules 1 under test in the press-fitting mechanism is two. When the number of the IGBT modules 1 under test is greater, the two IGBT modules 1 under test and their surrounding structures can be stacked in height according to the layout and connection relationship.

[0082] In this embodiment, an insulating isolation plate 6 is provided between two adjacent IGBT modules 1 under test.

[0083] It should be noted that the provision of the insulating isolation plate 6 can achieve potential isolation between the plurality of IGBT modules 1 under test.

[0084] In this embodiment, the air supply device 7, the insulating isolation plate 6 in contact with the top pressure mechanism 5, and the insulating isolation plate 6 arranged between two adjacent IGBT modules 1 under test are connected together. Figure 2 As shown, it is an E-shaped structure, and the IGBT module 1 under test and the heater 9 are installed and removed by plugging and pulling, thereby improving the efficiency of the preparation work in the early stage of the test.

[0085] When the device is actually used, a certain number of IGBT modules 1 under test are installed into the press-fitting mechanism, and the controller controls the thermometer 8, the cosmic ray irradiation source 2 and the voltage loading module to start. The thermometer 8 measures the surface temperature of the IGBT module 1 under test and feeds the temperature back to the temperature control system, i.e., the controller. The cosmic ray irradiation source 2 releases cosmic rays perpendicular to the IGBT module 1 under test, and applies irradiation stress to the IGBT module 1 under test. The voltage loading module applies voltage to the IGBT module 1 under test, so that the IGBT module 1 under test generates an electric field. Under the combined action of the irradiation stress and the electric field, the heater 9 and the air supply device 7 in the temperature control device are controlled to work. , adjust the temperature of the tested IGBT module 1; specifically, the air supply device 7 is used to take away the surface heat of the tested IGBT module 1; the temperature control system can dynamically adjust the temperature of the tested IGBT module 1, and increase the power of the heater 9 when the temperature of the tested IGBT module 1 is lower than the set value; when the temperature of the tested IGBT module 1 is higher than the set value, the power of the heater 9 is reduced, and the air supply device 7 is started at the same time to dissipate heat and cool down, so that the tested IGBT module 1 cycles in the process of heating and cooling down until the tested IGBT module 1 fails, and the test data is recorded. The failure characteristics of the tested IGBT module 1 such as the failure rate and life of the tested IGBT module 1 can be obtained by performing corresponding processing on the test data.

[0086] Example 2

[0087] Based on the same inventive concept, the present invention also provides a press-fit IGBT module accelerated life test system, such as Figure 3 As shown, it includes: the press-fit IGBT module accelerated life test device, the stress loading module and the temperature control module in the above embodiment;

[0088] The stress loading module is electrically connected to the cosmic ray irradiation source 2 and the voltage loading module in the press-fit IGBT module accelerated life test device, and is used to start the cosmic ray irradiation source 2 and the voltage loading module based on the test set cosmic ray radiation amount and the test set voltage loading amount, so that the cosmic ray irradiation source 2 and the voltage loading module apply cosmic ray stress and voltage stress to the IGBT module 1 under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount;

[0089] The temperature control module is electrically connected to the temperature control device in the crimped IGBT module accelerated life test device, and is used to start the temperature control device based on the test set temperature range, perform a heating and cooling cycle on the tested IGBT module 1 within the test set temperature range, and monitor the temperature of the tested IGBT module 1 in real time through the temperature control device until the tested IGBT module 1 fails.

[0090] In this embodiment, the temperature control module is specifically used for:

[0091] Based on the real-time monitoring data of the thermometer 8 in the temperature control device, when the temperature of the tested IGBT module 1 is lower than the lower limit of the test set temperature, the heater 9 in the temperature control device is started to heat the tested IGBT module 1; when the temperature of the tested IGBT module 1 is higher than the upper limit of the test set temperature, the power of the heater 9 is reduced, and the air supply device 7 is started at the same time to dissipate heat and cool down, so as to perform a heating and cooling cycle on the tested IGBT module 1.

[0092] Example 3

[0093] Based on the same inventive concept, the present invention also provides a method for accelerating the life test of a crimped IGBT module. Figure 4 As shown, the press-fit IGBT module accelerated life test device in the above embodiment is used, and the test method includes:

[0094] S1, based on the test set cosmic ray radiation amount and the test set voltage loading amount, start the cosmic ray irradiation source 2 and the voltage loading module in the press-fit IGBT module accelerated life test device, and apply cosmic rays and voltage to the IGBT module 1 under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount;

[0095] S2. Based on the test set temperature range, start the temperature control device in the press-fit IGBT module accelerated life test device, perform a heating and cooling cycle on the tested IGBT module 1 within the test set temperature range, and monitor the temperature of the tested IGBT module 1 in real time through the temperature control device until the tested IGBT module 1 fails.

[0096] In this embodiment, the test set cosmic ray radiation amount, the test set voltage loading amount and the test set temperature range are used as test acceleration stresses, which are all correlated with the actual stress existing in the special environment of high altitude areas (above 2500 meters above sea level). Testing under test acceleration stress can shorten the test time, improve test efficiency and reduce test costs. Through the correlation between the actual stress and the test acceleration stress, the failure characteristics of the tested IGBT module 1 under the actual stress can be obtained, including failure rate and life.

[0097] In this embodiment, the heating and cooling cycle of the IGBT module 1 under test in S2 may include:

[0098] Based on the real-time monitoring data of the thermometer 8 in the temperature control device, when the temperature of the tested IGBT module 1 is lower than the lower limit of the test set temperature, the heater 9 in the temperature control device is started to heat the tested IGBT module 1; when the temperature of the tested IGBT module 1 is higher than the upper limit of the test set temperature, the power of the heater 9 is reduced, and the air supply device 7 is started at the same time to dissipate heat and cool down, so as to perform a heating and cooling cycle on the tested IGBT module 1.

[0099] Example 4

[0100] Based on the same inventive concept, the present invention also provides a method for evaluating a crimped IGBT module, such as Figure 5 As shown, the evaluation method includes:

[0101] A1. Based on the accelerated life test method for the press-fit IGBT module in the above embodiment, the test accelerated life of the tested IGBT module 1 under the test set stress is obtained; the test set stress includes the test set cosmic ray radiation amount, the test set voltage loading amount and the test set temperature range;

[0102] A2. Based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model, a failure characteristic evaluation model of the tested IGBT module 1 is constructed;

[0103] A3. Inputting actual stress into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module 1; the actual stress includes actual cosmic ray radiation, actual voltage loading and actual temperature range.

[0104] In this embodiment, the above A2 may include:

[0105] Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed;

[0106] The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module 1 is obtained.

[0107] In this embodiment, the failure characteristic basic evaluation model is expressed as:

[0108]

[0109] Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

[0110] Specifically, in order to solve the above model parameters, the logarithm of both sides of the equation of the failure characteristic basic assessment model is taken to linearize the failure characteristic basic assessment model, and then the least squares method or other regression methods are used to fit the above linearized failure characteristic basic assessment model to solve the model parameters.

[0111] Example 5

[0112] Based on the same inventive concept, the present invention also provides a crimp-type IGBT module evaluation system, such as Figure 6 As shown, including:

[0113] A data acquisition module, for acquiring the test accelerated life of the tested IGBT module 1 under the test set stress based on the accelerated life test method of the press-fit IGBT module in the above embodiment; the test set stress includes the test set cosmic ray radiation amount, the test set voltage loading amount and the test set temperature range;

[0114] A model building module, for building a failure characteristic evaluation model of the tested IGBT module 1 based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model;

[0115] An evaluation module is used to input actual stress into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module 1; the actual stress includes actual cosmic ray radiation, actual voltage loading and actual temperature range.

[0116] In this embodiment, the model building module is specifically used for:

[0117] Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed;

[0118] The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module 1 is obtained.

[0119] In this embodiment, the failure characteristic basic evaluation model is expressed as:

[0120]

[0121] Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

[0122] Example 6

[0123] like Figure 7 As shown, the present invention also provides an electronic device, which may be a computer device, a single-chip device, an intelligent mobile device, etc. The electronic device in this embodiment may include a processor, a memory, a transceiver component, etc. The memory, the processor, and the transceiver component are connected via a bus; the memory may be used to store an execution program, and an exemplary execution program may include instructions; the processor is used to execute the instructions stored in the memory. The memory may also be used to store data, which may be called and / or modified when the instructions are executed.

[0124] The processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. It is the computing core and control core of the terminal, which is suitable for implementing one or more instructions, specifically suitable for loading and executing one or more instructions in a storage medium to implement the corresponding method flow or corresponding function, so as to implement a charging behavior prediction model construction method based on a large model or a charging behavior prediction method based on a large model in the above-mentioned embodiment. Step.

[0125] Example 7

[0126] Based on the same inventive concept, the present invention also provides a readable storage medium, specifically an electronic device readable storage medium (Memory), which is a memory device in an electronic device for storing programs and data. It is understandable that the storage medium here may include both a built-in storage medium in an electronic device and an extended storage medium supported by the electronic device. The storage medium provides a storage space, which stores the operating system of the terminal. In addition, one or more instructions suitable for being loaded and executed by a processor are also stored in the storage space, and these instructions may be one or more execution programs (including program codes). It should be noted that the storage medium here may be a high-speed RAM memory or a non-volatile memory, such as at least one disk memory. The processor loads and executes one or more instructions stored in the storage medium, which can implement a method for constructing a charging behavior prediction model based on a large model or a step of a charging behavior prediction method based on a large model in the above-mentioned embodiment.

[0127] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0128] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0129] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0130] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0131] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit its protection scope. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that after reading the present invention, those skilled in the art can still make various changes, modifications or equivalent substitutions to the specific implementation methods of the application, but these changes, modifications or equivalent substitutions are all within the protection scope of the claims of the present invention.

Claims

1. A press-fit IGBT module accelerated life test device, characterized in that: include: A press-fitting mechanism for press-fitting an IGBT module (1) under test, a temperature control device arranged on the surface of the IGBT module (1) under test, a cosmic ray irradiation source (2) arranged perpendicular to the plane of the IGBT module (1) under test, and a voltage loading module electrically connected to the IGBT module (1) under test, wherein the temperature control device and the IGBT module (1) under test are press-fitted in combination in the press-fitting mechanism.

2. A press-fit IGBT module accelerated life test device as claimed in claim 1, characterized in that: The temperature control device comprises a heat exchange plate (3) arranged on the surface of the IGBT module (1) under test, a heater (9) and an air supply device (7) arranged on the heat exchange plate (3), and a temperature measuring instrument (8) for detecting the surface temperature of the IGBT module (1) under test; the heat exchange plate (3) and the IGBT module (1) under test are combined and press-fitted in the press-fitting mechanism; The heater (9) is used to heat the IGBT module (1) under test, and the air supply device (7) is used to dissipate heat from the IGBT module (1) under test.

3. A press-fit IGBT module accelerated life test device as claimed in claim 2, characterized in that: A ventilation duct is provided inside the heat exchange plate (3), the heater (9) is inserted into the ventilation duct and arranged close to the surface of the IGBT module (1) under test, and the air supply device (7) supplies air into the ventilation duct.

4. A press-fit IGBT module accelerated life test device as claimed in claim 2 or 3, characterized in that: The thermometers (8) are infrared thermometers, and the number of the infrared thermometers is the same as the number of the heat exchange plates (3) and they are arranged in a one-to-one correspondence.

5. A press-fit IGBT module accelerated life test device as claimed in claim 2 or 3, characterized in that: The heater (9) is a heating resistor.

6. A press-fit IGBT module accelerated life test device as claimed in claim 2 or 3, characterized in that: The press-fitting mechanism comprises two oppositely arranged pressing mechanisms (5) and an insulating pull rod (4) connecting the two pressing mechanisms (5); a test area is formed between the two pressing mechanisms (5) and the insulating pull rod (4), the IGBT module (1) under test is arranged in the test area, and the heat exchange plate (3) and the IGBT module (1) under test are combined and press-fitted between the two oppositely arranged pressing mechanisms (5).

7. The accelerated life test device for a press-fit IGBT module according to claim 6, characterized in that: An insulating isolation plate (6) is provided between the pressing mechanism (5) and the IGBT module (1) under test, and the temperature control device is provided between the IGBT module (1) under test and the insulating isolation plate (6).

8. The accelerated life test device for a press-fit IGBT module according to claim 1, characterized in that: The number of the IGBT modules (1) under test in the press-fitting mechanism is plural.

9. The accelerated life test device for a press-fit IGBT module according to claim 8, characterized in that: An insulating isolation plate (6) is provided between two adjacent IGBT modules (1) under test.

10. A press-fit IGBT module accelerated life test system, characterized in that: include: The accelerated life test device, stress loading module and temperature control module of the press-fit IGBT module according to any one of claims 1 to 9; The stress loading module is electrically connected to the cosmic ray irradiation source (2) and the voltage loading module in the press-fit IGBT module accelerated life test device, and is used to start the cosmic ray irradiation source (2) and the voltage loading module based on the test set cosmic ray radiation amount and the test set voltage loading amount, so that the cosmic ray irradiation source (2) and the voltage loading module apply cosmic ray stress and voltage stress to the IGBT module (1) under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount; The temperature control module is electrically connected to the temperature control device in the press-fit IGBT module accelerated life test device, and is used to start the temperature control device based on a test set temperature range, perform a heating and cooling cycle on the tested IGBT module (1) within the test set temperature range, and monitor the temperature of the tested IGBT module (1) in real time through the temperature control device until the tested IGBT module (1) fails.

11. The accelerated life test system for a press-fit IGBT module according to claim 10, characterized in that: The temperature control module is specifically used for: Based on real-time monitoring data of a temperature measuring instrument (8) in the temperature control device, when the temperature of the IGBT module (1) under test is lower than the lower limit of the test set temperature, the heater (9) in the temperature control device is started to heat the IGBT module (1) under test; when the temperature of the IGBT module (1) under test is higher than the upper limit of the test set temperature, the power of the heater (9) is reduced, and at the same time, the air supply device (7) is started to dissipate heat and cool down, so as to perform a heating and cooling cycle on the IGBT module (1) under test.

12. A method for accelerated life test of a press-fit IGBT module, characterized in that: Using the press-fit IGBT module accelerated life test device according to any one of claims 1 to 9, the test method comprises: Based on the test set cosmic ray radiation amount and the test set voltage loading amount, starting the cosmic ray irradiation source (2) and the voltage loading module in the press-fit IGBT module accelerated life test device, applying cosmic rays and voltage to the IGBT module (1) under test in the press-fit mechanism until the applied cosmic ray stress reaches the test set cosmic ray radiation amount and the applied voltage stress reaches the test set voltage loading amount; Based on the test set temperature range, a temperature control device in the press-fit IGBT module accelerated life test device is started, a heating and cooling cycle is performed on the IGBT module (1) under test within the test set temperature range, and the temperature of the IGBT module (1) under test is monitored in real time by the temperature control device until the IGBT module (1) under test fails.

13. A method for accelerating life test of a press-fit IGBT module according to claim 12, characterized in that: The step of performing a heating and cooling cycle on the IGBT module (1) under test within the test set temperature range comprises: Based on real-time monitoring data of a temperature measuring instrument (8) in the temperature control device, when the temperature of the IGBT module (1) under test is lower than the lower limit of the test set temperature, the heater (9) in the temperature control device is started to heat the IGBT module (1) under test; when the temperature of the IGBT module (1) under test is higher than the upper limit of the test set temperature, the power of the heater (9) is reduced, and at the same time, the air supply device (7) is started to dissipate heat and cool down, so as to perform a heating and cooling cycle on the IGBT module (1) under test.

14. A method for evaluating a press-fit IGBT module, characterized in that: The evaluation methods include: Based on the accelerated life test method for a press-fit IGBT module according to any one of claims 10 to 11, the test accelerated life of the tested IGBT module (1) under a test set stress is obtained; the test set stress includes a test set cosmic ray radiation amount, a test set voltage loading amount and a test set temperature range; Based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model, a failure characteristic evaluation model of the tested IGBT module (1) is constructed; The actual stress is input into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module (1); the actual stress includes the actual cosmic ray radiation amount, the actual voltage loading amount and the actual temperature range.

15. A method for evaluating a press-fit IGBT module according to claim 14, characterized in that: The failure characteristic evaluation model of the tested IGBT module (1) is constructed based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model, including: Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed; The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module (1) is obtained.

16. A method for evaluating a press-fit IGBT module according to claim 15, characterized in that: The failure characteristic basic evaluation model is expressed as: Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

17. A press-fit IGBT module evaluation system, characterized in that: include: A data acquisition module, for acquiring the test accelerated life of the tested IGBT module (1) under a test set stress based on the accelerated life test method for a crimped IGBT module according to any one of claims 10 to 11; the test set stress includes a test set cosmic ray radiation amount, a test set voltage loading amount and a test set temperature range; A model building module, used to build a failure characteristic evaluation model of the tested IGBT module (1) based on the test set stress and the corresponding test accelerated life, combined with the Arrhenius equation and the stress index model; An evaluation module is used for inputting actual stress into the failure characteristic evaluation model to obtain the actual life and actual failure rate of the tested IGBT module (1); the actual stress includes actual cosmic ray radiation, actual voltage loading and actual temperature range.

18. A press-fit IGBT module evaluation system as claimed in claim 17, characterized in that: The model building module is specifically used for: Based on the Arrhenius equation and stress index model, a basic evaluation model for failure characteristics is constructed; The test set stress is used as input, the test accelerated life corresponding to the test set stress is used as output, the model parameters of the failure characteristic basic evaluation model are adjusted, and the failure characteristic evaluation model of the tested IGBT module (1) is obtained.

19. A press-fit IGBT module evaluation system as claimed in claim 18, characterized in that: The failure characteristic basic evaluation model is expressed as: Where L is the test accelerated life, λ is the failure rate, T is the upper limit of the test temperature range, k is the Boltzmann constant, R is the test set cosmic ray radiation, V is the test set voltage load; A and E a are the model parameters in the Arrhenius equation, where A is a constant and E a is the activation energy; n R 、n V are model parameters in the stress exponent model, representing the stress exponent of cosmic ray radiation and the stress exponent of voltage respectively.

20. An electronic device, characterized in that: include: at least one processor and memory; The memory and the processor are connected via a bus; The memory is used to store one or more programs; When the one or more programs are executed by the at least one processor, a press-fit IGBT module accelerated life test method as described in any one of claims 10 to 11, or a press-fit IGBT module evaluation method as described in any one of claims 14 to 16 is implemented.

21. A readable storage medium, characterized in that: An execution program is stored thereon, and when the execution program is executed, a method for accelerating life test of a press-fit IGBT module as described in any one of claims 10 to 11, or a method for evaluating a press-fit IGBT module as described in any one of claims 14 to 16 is implemented.

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