Flash memory problem positioning method and device, equipment and storage medium

Abstract

The invention belongs to the technical field of flash memory problem positioning, and discloses a flash memory problem positioning method, device and equipment and a storage medium, the method comprises the following steps: collecting threshold value distribution data of a key index of a fault flash memory, the key index comprising a preset flash memory extended function parameter; inputting the threshold value distribution data of the key index into an abnormal threshold value distribution diagram database to obtain a first abnormal threshold value distribution diagram corresponding to the key index in the abnormal threshold value distribution diagram database; determining a second abnormal threshold distribution diagram with the strongest similarity with the threshold distribution data of the key index in the first abnormal threshold distribution diagram; and determining the problem corresponding to the second abnormal threshold distribution diagram as the problem of the fault flash memory. According to the invention, the problems of low positioning accuracy, low efficiency and high cost of a positioning scheme for the flash memory problem in the related art when the flash memory problem is positioned are solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of flash memory problem positioning, and in particular relates to a flash memory problem positioning method, device, equipment and storage medium. Background Art

[0002] Flash memory (F1ash) storage is widely used in many electronic devices due to its advantages such as fast read and write speed, low latency, high data integrity, small size, light weight and low power consumption.

[0003] However, in the actual application of flash memory, flash memory problems occur frequently and face many difficulties in diagnosis and resolution. On the one hand, due to the lack of a unified standard for determining flash memory problems, there will be deviations in the problems determined by different technicians. On the other hand, the manual method of determining flash memory problems is inefficient. There is no fixed process and clear direction guidance. Technicians need to rely on personal experience. The trial process is blind and time-consuming, which increases downtime and economic losses. Furthermore, when determining the problems with flash memory, technicians are required to have basic knowledge and extended knowledge of flash memory. The structural domain principle of flash memory itself is relatively complex, involving knowledge of storage units, charge principles, conversion algorithms, etc. At the same time, different manufacturers have different product characteristics, and the adaptation requirements in different scenarios are also different, resulting in higher technical quality requirements for technicians, thereby increasing the difficulty of confirming flash memory problems and the cost of employment.

[0004] In summary, the related art urgently needs a flash memory problem positioning solution, which can overcome the problems of low positioning accuracy, low efficiency and high cost in the related art when positioning flash memory problems. Summary of the invention

[0005] The present invention provides a flash memory problem positioning method, device, equipment and storage medium, which are used to solve the problems of low positioning accuracy, low efficiency and high cost in the flash memory problem positioning solution in the related art when positioning the flash memory problem.

[0006] In order to solve the above technical problems, in a first aspect, the present invention provides a method for locating a flash memory problem, comprising:

[0007] Collecting threshold distribution data of key indicators of the faulty flash memory, wherein the key indicators include preset flash memory extension function parameters;

[0008] Inputting the threshold distribution data of the key indicator into an abnormal threshold distribution map database to obtain a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database;

[0009] Determine a second abnormal threshold distribution map among the first abnormal threshold distribution maps, which has the strongest similarity to the threshold distribution data of the key indicator;

[0010] The problem corresponding to the second abnormal threshold distribution diagram is determined as the problem of the faulty flash memory.

[0011] Optionally, before inputting the threshold distribution data of the key indicator into the abnormal threshold distribution map database to obtain the first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database, the method further includes:

[0012] Collecting third threshold distribution data of key indicators when the flash memory works normally, and collecting fourth threshold distribution data of key indicators when problems occur in the flash memory and when the problems occur in the flash memory;

[0013] Generate an abnormal threshold distribution graph of the key indicator of the problem according to the third threshold distribution data and the fourth threshold distribution data;

[0014] Associating the problem with an abnormal threshold distribution diagram of a key indicator corresponding to the problem to generate an association relationship;

[0015] The problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the association relationship are stored in the abnormal threshold distribution map database.

[0016] Optionally, the collecting of the third threshold distribution data of the key indicator when the flash memory works normally, and the collecting of the problem occurring in the flash memory and the fourth threshold distribution data of the key indicator when the problem occurs in the flash memory, include:

[0017] Collect the third threshold distribution data of the first key indicator when the flash memory works normally, and collect historical problems that occurred in the flash memory and the fifth threshold distribution data of the first key indicator when the flash memory occurred the historical problems;

[0018] Generate sixth threshold distribution data of a second key indicator related to the historical problem, wherein the second key indicator is a flash memory extension function parameter, and the fourth threshold distribution data includes the fifth threshold distribution data and the sixth threshold distribution data.

[0019] Optionally, generating sixth threshold distribution data of a second key indicator related to the historical issue includes:

[0020] Determining the flash memory extended function parameters related to flash memory performance and flash memory problems;

[0021] Changing the threshold of the flash memory extension function parameter and observing the working status of the flash memory;

[0022] When a fault occurs in the flash memory and the fault is the historical problem, it is confirmed that the threshold of the flash memory extension function parameter at the current moment is the sixth threshold distribution data related to the historical problem.

[0023] Optionally, the determining of the flash memory extension function parameters related to the flash memory performance and the flash memory problem includes:

[0024] Observe the change of the performance parameter value of the flash memory and the working state of the flash memory when the value of the preset flash memory extension function parameter changes;

[0025] The preset flash memory extended function parameter that will cause the performance parameter value of the flash memory to change and / or the working state of the flash memory to change is determined as the flash memory extended function parameter related to the flash memory performance and the flash memory problem.

[0026] Optionally, associating the problem with an abnormal threshold distribution diagram of a key indicator corresponding to the problem to generate an association relationship includes:

[0027] Based on the hierarchical relationship between the key indicators, the key indicators are divided into levels, wherein the key indicators of a higher level include the key indicators of a lower level;

[0028] Key indicators with higher levels have a higher priority for problem finding;

[0029] The association relationship is generated based on the problem, the abnormal threshold distribution diagram of the key indicator corresponding to the problem, and the problem search sequence.

[0030] Optionally, storing the problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the association relationship in the abnormal threshold distribution map database includes:

[0031] Tracing the key indicators corresponding to the problem, wherein the tracing order is from high to low levels of the key indicators;

[0032] According to the tracing order of the key indicators, specific solutions corresponding to the problems are generated step by step, wherein each key indicator corresponds to a solution;

[0033] The problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, the association relationship and the specific solution corresponding to the problem are stored in the abnormal threshold distribution map database.

[0034] In a second aspect, the present invention provides a device for locating a flash memory problem, comprising:

[0035] A collection module, used for collecting threshold distribution data of key indicators of the faulty flash memory, wherein the key indicators include preset flash memory extension function parameters;

[0036] A distribution map acquisition module, used for inputting the threshold distribution data of the key indicator into an abnormal threshold distribution map database, and obtaining a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database;

[0037] A similarity comparison module, used to determine, among the first abnormal threshold distribution graph, a second abnormal threshold distribution graph having the strongest similarity to the threshold distribution data of the key indicator;

[0038] A problem determination module is used to determine the problem corresponding to the second abnormal threshold distribution diagram as a problem of the faulty flash memory.

[0039] In a third aspect, the present invention provides a computer device, including a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus;

[0040] Memory, used to store computer programs;

[0041] The processor is used to implement the steps of the flash memory problem locating method provided in the first aspect when executing the program stored in the memory.

[0042] In a fourth aspect, the present invention provides a computer-readable storage medium having a readable computer program stored thereon, which, when executed by a processor, implements the steps of the method for locating a flash memory problem as provided in the first aspect above.

[0043] Compared with the prior art, the flash memory problem location method, device, equipment and storage medium provided by the present invention have the following beneficial effects:

[0044] In the present invention, when determining the problem of the faulty flash memory, the second abnormal threshold distribution map corresponding to the threshold distribution data of the key indicators of the faulty flash memory is found, and then the problem corresponding to the second abnormal threshold distribution map stored in the abnormal threshold distribution map database is used as the problem of the faulty flash memory. Since the abnormal threshold distribution map stored in the abnormal threshold distribution map database and the corresponding problem are fixed, a unified judgment standard is provided when determining the problem of the faulty flash memory, avoiding the problem that the determined problems caused by the possible inconsistency of the judgment standards by different technicians are biased, thereby improving the accuracy of locating the faulty flash memory problem. In addition, when considering the key indicators, the embodiment of the present invention takes into account the flash memory extension function parameters, so that when determining the problem of the faulty flash memory, the influencing factors that cause the problem are covered as comprehensively as possible, thereby making the problem obtained based on these influencing factors more accurate. In addition, since the problem has been set in the abnormal threshold distribution map database, it is not necessary to require the technician to analyze the cause of the problem step by step when the flash memory fails, thereby avoiding the problem of inefficiency in manually determining the flash memory problem. Furthermore, when determining the problem of a faulty flash memory, even if a technician is required to determine the problem, the technician only needs to find the second abnormal threshold distribution diagram corresponding to the threshold distribution data of the key indicators of the faulty flash memory. The technician does not need to master the professional knowledge of the system, thereby avoiding the problem of low efficiency and high cost of flash memory problem location in related technologies due to the need for technicians to master the professional knowledge of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0046] Figure 1 The present invention provides a flowchart of a flash memory problem location method according to an embodiment of the present invention.

[0047] Figure 2 This is another flow chart of the method for locating a flash memory problem provided by an embodiment of the present invention.

[0048] Figure 3 yes Figure 2 Flowchart of step S121 in .

[0049] Figure 4 yes Figure 3 Flowchart of step S1212 in .

[0050] Figure 5 yes Figure 2 Flowchart of step S123 in .

[0051] Figure 6 yes Figure 2 Flowchart of step S124 in .

[0052] Figure 7 It is a structural schematic diagram of a flash memory problem locating device provided by an embodiment of the present invention.

[0053] Figure 8 It is a schematic diagram of the structure of a computer device provided in an embodiment of the present invention.

[0054] Fig. 9 It is a schematic diagram of the structure of a computer-readable storage medium in an embodiment of the present invention. DETAILED DESCRIPTION

[0055] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0056] In order to make the description of the disclosed content more detailed and complete, the following is an illustrative description of the implementation mode and specific examples of the present invention; however, this is not the only form of implementing or applying the specific embodiments of the present invention. The implementation mode covers the features of multiple specific embodiments and the method steps and their sequence for constructing and operating these specific embodiments. However, other specific embodiments can also be used to achieve the same or equal functions and step sequences. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0057] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein.

[0058] In addition, in the description of the embodiments of the present invention, "multiple" means two or more than two, and other quantifiers are similar and should be understood. The preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention. In addition, the embodiments of the present invention and the features therein may be combined with each other without conflict.

[0059] Figure 1 The present invention provides a flowchart of a flash memory problem location method according to an embodiment of the present invention. Figure 1 As shown, the method for locating a flash memory problem may include the following steps.

[0060] Step S110, collecting threshold distribution data of key indicators of the faulty flash memory.

[0061] Among them, key indicators include preset flash memory expansion function parameters.

[0062] Specifically, in step S110, the faulty flash memory is a faulty flash memory. The key indicator of the faulty flash memory is an indicator parameter that affects the working state of the flash memory, for example, the key indicator may be a flash memory read and write speed, voltage or error rate, etc. The number of key indicators may be one or more, which may be set according to specific needs of the application, and is not limited in detail here.

[0063] Specifically, the flash memory extension function parameters are parameters used to optimize the flash memory function, which can be set according to the specific needs of the application. For example, when the read and write performance of the flash memory needs to be improved, the flash memory extension function parameters can be set as cache strategy parameters, and then the cache strategy parameters can be set to reasonably set the cache capacity, cache algorithm and write strategy, etc., to improve the read and write performance of the flash memory; when the read waiting time of sequential access data needs to be reduced, the flash memory extension function parameters can be set as data pre-read parameters, and then the data pre-read function can be used to predict the data access needs in advance and load possible data into the cache or memory in advance; when it is necessary to ensure the reliability of the data stored in the flash memory, the flash memory extension function parameters can be set as error correction algorithm strength parameters, and then the parameters of the error correction algorithm strength can be adjusted (such as using more advanced error correction codes or suitable error correction algorithm types) to effectively detect and correct errors that occur during data storage and transmission.

[0064] Specifically, the threshold distribution data of the key indicator of the faulty flash memory is a value range of one or more key indicators of the flash memory when the flash memory fails.

[0065] Step S130: input the threshold distribution data of the key indicator into the abnormal threshold distribution map database to obtain a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database.

[0066] It should be noted that, in step S130, the first abnormal threshold distribution map is a part or all of the abnormal threshold distribution map pre-stored in the abnormal threshold distribution map database, and the abnormal threshold distribution map can be a distribution map formed by the abnormal value range of one or more key indicators of the flash memory when various fault problems occur in the flash memory. In this way, in step S130, after the threshold distribution data of the key indicator is input into the abnormal threshold distribution map database, the first abnormal threshold distribution map corresponding to the key indicator can be obtained.

[0067] As a specific example, the abnormal threshold distribution map database may pre-store abnormal value range distribution maps (i.e., abnormal threshold distribution maps) of key indicators such as the read and write speed, voltage, error rate, and cache strategy of the flash memory when various fault problems occur in the flash memory. The key indicators of the faulty flash memory currently collected in step S110 are the read and write speed and the cache strategy. After the threshold distribution data of the read and write speed and the cache strategy are input into the abnormal threshold distribution map database in step S130, the abnormal value range distribution of the read and write speed and the cache strategy can be screened out from the abnormal value range distribution maps of key indicators such as the read and write speed, voltage, error rate, and cache strategy of the flash memory as the first abnormal threshold distribution map.

[0068] Step S140, determining a second abnormal threshold distribution map in the first abnormal threshold distribution map that has the strongest similarity to the threshold distribution data of the key indicator.

[0069] In step S140, after the first abnormal threshold distribution diagram corresponding to the key indicator of the faulty flash memory is obtained by screening, the second abnormal threshold distribution diagram which is closest to the value range of the key indicator of the faulty flash memory (ie, has the strongest similarity) can be further obtained by screening.

[0070] Step S150: determining the problem corresponding to the second abnormal threshold distribution diagram as a problem of a faulty flash memory.

[0071] It should be noted that various problems that occur in the flash memory and abnormal threshold distribution maps of key indicators corresponding to various problems are pre-stored in the abnormal threshold distribution map database. Specifically, a problem that occurs in the flash memory may correspond to abnormal value ranges of multiple key indicators, and different value ranges of a key indicator may also correspond to different problems that occur in the flash memory. The specific situation can be determined according to the specific circumstances of various problems that occur in the flash memory in actual scenarios, and no specific limitation is made here.

[0072] In the solution provided by the embodiment of the present invention, when determining the problem of the faulty flash memory, the second abnormal threshold distribution map corresponding to the threshold distribution data of the key indicators of the faulty flash memory is found, and then the problem corresponding to the second abnormal threshold distribution map stored in the abnormal threshold distribution map database is used as the problem of the faulty flash memory. Since the abnormal threshold distribution map stored in the abnormal threshold distribution map database and the corresponding problem are fixed, a unified judgment standard is provided when determining the problem of the faulty flash memory, avoiding the problem that the determined problems caused by the possible inconsistency of the judgment standards by different technicians are biased, thereby improving the accuracy of locating the faulty flash memory problem. In addition, when considering the key indicators, the embodiment of the present invention takes into account the flash memory extension function parameters, so that when determining the problem of the faulty flash memory, the influencing factors that cause the problem are covered as comprehensively as possible, thereby making the problem obtained based on these influencing factors more accurate. In addition, since the problem has been set in the abnormal threshold distribution map database, it is not necessary to require the technician to analyze the cause of the problem step by step when the flash memory fails, thereby avoiding the problem of inefficiency in the manual determination of the flash memory problem. Furthermore, when determining the problem of a faulty flash memory, even if a technician is required to determine the problem, the technician only needs to find the second abnormal threshold distribution diagram corresponding to the threshold distribution data of the key indicators of the faulty flash memory. The technician does not need to master the professional knowledge of the system, thereby avoiding the problem of low efficiency and high cost of flash memory problem location in related technologies due to the need for technicians to master the professional knowledge of the system.

[0073] In some embodiments of the present invention, Figure 2 As shown, the following steps are also included before step S130.

[0074] Step S121, collecting the third threshold distribution data of the key indicator when the flash memory works normally, and collecting the fourth threshold distribution data of the key indicator when the flash memory has problems and when the flash memory has problems;

[0075] Step S122, generating an abnormal threshold distribution graph of the key indicator of the problem according to the third threshold distribution data and the fourth threshold distribution data;

[0076] Step S123, associating the problem with the abnormal threshold distribution diagram of the key indicator corresponding to the problem to generate an association relationship;

[0077] Step S124, storing the problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the association relationship in an abnormal threshold distribution map database.

[0078] Specifically, in step S121, the flash memory works normally, which means that no failure occurs when the flash memory works. The problems of the flash memory collected in step S121 may be one or more.

[0079] Specifically, in step S122, since the third threshold distribution data is the value range distribution of the key indicator when the flash memory works normally, and the fourth threshold distribution data is the value range distribution of the key indicator when a problem occurs in the flash memory, by comparing the third threshold distribution data and the fourth threshold distribution data, it can naturally be judged that the value range distribution diagram of the key indicator in the fourth threshold distribution data that is different from the third threshold distribution data is the abnormal threshold distribution diagram of the key indicator with the problem.

[0080] Furthermore, naturally based on step S122, an abnormality threshold distribution map of one or more problems can be obtained, and then in step S123, the problem of the flash memory and the abnormality threshold distribution map corresponding to the problem can be associated.

[0081] In this way, based on steps S121 to S124, a comprehensive abnormal threshold distribution map database can be established.

[0082] In some embodiments of the present invention, Figure 3 As shown, step S121 includes the following steps.

[0083] Step S1211, collecting the third threshold distribution data of the first key indicator when the flash memory works normally, and collecting the historical problems that occurred in the flash memory and the fifth threshold distribution data of the first key indicator when the flash memory had the historical problems;

[0084] Step 1212, generating sixth threshold distribution data of a second key indicator related to the historical problem, wherein the second key indicator is a flash memory extension function parameter, and the fourth threshold distribution data includes fifth threshold distribution data and sixth threshold distribution data.

[0085] Specifically, in step S1212, since the flash memory extended function parameters are extended function parameters formed to optimize the flash memory performance, compared with other key indicators, the flash memory extended function parameters do not have more historical failure scenarios. Therefore, historical problems corresponding to other key indicators can be collected in advance in step S1211, and then based on the scenarios of historical problems, the sixth threshold distribution data of the corresponding extended function parameters can be generated.

[0086] In some embodiments of the present invention, Figure 4 As shown, step S1212 includes the following steps.

[0087] Step S12121, determining flash memory extension function parameters related to flash memory performance and flash memory problems;

[0088] Step S12122, changing the threshold of the flash memory extension function parameter and observing the working status of the flash memory;

[0089] Step S12123, when a flash memory fails and the failure is a historical problem, confirm that the threshold of the flash memory extension function parameter at the current moment is the sixth threshold distribution data related to the historical problem.

[0090] Specifically, in step S12121, determining the flash memory extension function parameters related to flash memory performance and flash memory problems is to determine the flash memory extension function parameters that can affect the flash memory performance and cause flash memory problems. The determination method is any achievable method and is not limited in detail here.

[0091] To be more specific, in step S12122, by changing the threshold of the flash memory extended function parameter, the value range of the flash memory extended function parameter can be changed. As the value range of the flash memory extended function parameter changes, the working state of the flash memory may change or may not change, that is, the flash memory may always be in a normal working state, or it may change from a normal state to a faulty state.

[0092] Further specifically, in step S12123, when a flash memory failure is observed and the failure is observed to be a historical problem that has occurred, the threshold of the flash memory extension function when the flash memory failure occurs can be determined to be the sixth threshold distribution data of the flash memory extension function corresponding to the historical problem.

[0093] In this way, based on steps S12121 to S12123, abnormal threshold distribution data of the flash memory extension function parameters that can cause historical problems can be generated, so that the flash memory extension function parameters can be comprehensively considered when determining the problem of the faulty flash memory.

[0094] In some embodiments of the present invention, step S12121 includes:

[0095] Observe the change of the performance parameter value of the flash memory and the working state of the flash memory when the value of the preset flash memory extension function parameter changes;

[0096] The preset flash memory extension function parameters that will cause the performance parameter value of the flash memory to change and / or will cause the working state of the flash memory to change are determined as the flash memory extension function parameters related to the flash memory performance and the flash memory problem.

[0097] Thus, in the above-mentioned embodiment of the invention, the flash memory extension function parameters that may cause flash memory problems can be accurately determined, so that when the problems existing in the faulty flash memory are determined based on the thresholds of these flash memory extension function parameters, the determined problems can be more accurate.

[0098] In some embodiments of the present invention, Figure 5 As shown, step S123 includes the following steps.

[0099] Step S1231, classifying the key indicators based on the hierarchical relationship between the key indicators;

[0100] Step S1232, setting a higher level key indicator to have a higher problem search order;

[0101] Step S1233, generating an association relationship based on the problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the problem search sequence.

[0102] Among them, high-level key indicators include low-level key indicators.

[0103] Specifically, in step S1231, when key indicators are classified into levels, high-level key indicators are required to include low-level key indicators, that is, low-level key indicators are sub-level indicators of high-level key indicators. For example, the key indicators are reading and writing speeds and sequential reading and writing speeds. Since the reading and writing speeds include sequential reading and writing speeds and random reading and writing speeds, etc., the reading and writing speed can be set as a high-level key indicator, and the sequential reading and writing speeds and random reading and writing speeds can be set as low-level key indicators.

[0104] Further specifically, in step S1232, having a higher problem search order means that when the threshold distribution data of the key indicators of the faulty flash memory is input into the abnormal threshold distribution map database to obtain the final problem of the faulty flash memory, priority is given to searching the abnormal threshold distribution map database for key indicators of higher levels corresponding to the key indicators of the collected faulty flash memory. For example, if the key indicator of the collected faulty flash memory is the random read and write speed, then when searching the abnormal threshold distribution map database for the key indicator corresponding to the random read and write speed, priority is given to searching the key indicator of the read and write speed, and further searching for the threshold distribution map corresponding to the random read and write speed in the threshold distribution map of the read and write speed.

[0105] It can be understood that based on steps S1231-S1233, when confirming the problem corresponding to the faulty flash memory, the abnormal threshold distribution map corresponding to the problem can be searched step by step to finally determine the problem, thereby avoiding searching all abnormal threshold distribution maps in the abnormal threshold distribution map database in the process of finding the problem to compare their similarity with the threshold distribution data of the key indicators of the faulty flash memory, thereby effectively improving the efficiency of finding problems with the faulty flash memory.

[0106] In some embodiments of the present invention, the flash memory device type and environmental parameter values ​​corresponding to the abnormal threshold distribution map can also be set in the abnormal threshold distribution map database, wherein the flash memory device type corresponding to the abnormal threshold distribution map is the device type of the flash memory when a problem occurs in the flash memory, and the environmental parameters corresponding to the abnormal threshold distribution map are the parameter values ​​of the relevant environment in which the flash memory is located when a problem occurs in the flash memory.

[0107] Furthermore, the device type and environmental parameters can be set to have a higher level than the key indicators, that is, a higher problem search order. In this way, when searching for the abnormal threshold distribution map of the faulty flash memory, you can start with the device type and environmental parameters, avoiding the need to search for all the highest-level key indicators in the process of finding the problem, thereby effectively improving the efficiency of finding the problem of the faulty flash memory.

[0108] In some embodiments of the present invention, Figure 6 As shown, step S124 includes the following steps.

[0109] Step S1241, tracing the key indicators corresponding to the problem;

[0110] Step S1242, generating specific solutions corresponding to the problems step by step according to the tracing order of the key indicators;

[0111] Step S1243: store the problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, the association relationship, and the specific solution corresponding to the problem in an abnormal threshold distribution map database.

[0112] The tracing order is from high to low for key indicators. Each key indicator has a corresponding solution.

[0113] Specifically, in step S1242, when specific solutions corresponding to the problems are generated level by level according to the traceability order of key indicators, more specific solutions can be generated level by level based on the solutions of key indicators at each level, thereby making the generated solutions more reliable.

[0114] Based on the above-mentioned flash memory problem positioning method, the embodiment of the present invention provides a flash memory problem positioning device, such as Figure 7 As shown, the location device of the flash memory problem includes:

[0115] A collection module 710, used to collect threshold distribution data of key indicators of the faulty flash memory, wherein the key indicators include preset flash memory extension function parameters;

[0116] A distribution map acquisition module 720 is used to input the threshold distribution data of the key indicator into the abnormal threshold distribution map database to obtain a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database;

[0117] A similarity comparison module 730 is used to determine a second abnormal threshold distribution map in the first abnormal threshold distribution map that has the strongest similarity to the threshold distribution data of the key indicator;

[0118] The problem determination module 740 is configured to determine the problem corresponding to the second abnormal threshold distribution diagram as a problem of a faulty flash memory.

[0119] For other details about how the modules in the device for locating the flash memory problem implement the above technical solution, please refer to the description of the method for locating the flash memory problem provided in the above invention embodiment, which will not be repeated here. The modules in the device for locating the flash memory problem can be implemented in whole or in part by software, hardware, and a combination thereof. The modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to the modules above.

[0120] Please refer to Figure 8 , is a structural diagram of a computer device provided in an embodiment of the present invention, the device includes a processor 801, which can be implemented in the form of a general central processing unit (CPU), a microprocessor, an application specific integrated circuit (ASIC), or one or more integrated circuits, and is used to execute relevant programs to implement the technical solution provided in the embodiment of the present invention; a memory 802, which can be implemented in the form of a read-only memory (ROM), a static storage device, a dynamic storage device or a random access memory (RAM). The memory 802 can store an operating system and other application programs. When the technical solution provided in the embodiments of this specification is implemented by software or firmware, the relevant program code is stored in the memory 802, and the processor 801 calls to execute the flash memory problem positioning method of the embodiment of the present invention; the input / output interface 803 is used to implement information input and output; the communication interface 804 is used to implement communication interaction between this device and other devices, and communication can be achieved through wired methods (such as USB, network cables, etc.) or wireless methods (such as mobile networks, WIFI, Bluetooth, etc.); the bus 805 transmits information between the various components of the device (such as the processor 801, the memory 802, the input / output interface 803 and the communication interface 804); wherein the processor 801, the memory 802, the input / output interface 803 and the communication interface 804 are connected to each other within the device through the bus 805.

[0121] like Fig. 9As shown, the embodiment of the present invention also provides a schematic diagram of the structure of a computer-readable storage medium, on which a readable computer program 91 is stored; wherein the computer program 91 can be stored in the above storage medium in the form of a software product, including a number of instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) or a processor (processor) to execute all or part of the steps of the methods of various embodiments of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, magnetic disk or optical disk, ROM (Read-Only Memory), RAM (Random Access Memory) and other media that can store program codes, or terminal devices such as computers, servers, mobile phones, and tablets.

[0122] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of modules is only a logical function division, and there may be other division methods in actual implementation, such as multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, which can be electrical, mechanical or other forms.

[0123] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical modules, that is, they may be located in one place or distributed on multiple network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0124] In addition, each functional module in each embodiment of the present invention may be integrated into a processing module, or each module may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of a software functional module. If the integrated module is implemented in the form of a software functional module and sold or used as an independent product, it may be stored in a computer-readable storage medium.

[0125] In the above embodiments, all or part of the embodiments may be implemented by software, hardware, firmware or any combination thereof. When implemented by software, all or part of the embodiments may be implemented in the form of a computer program product.

[0126] The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on the computer, the process or function according to the embodiment of the present invention is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from a website site, a computer, a server or a data center to another website site, a computer, a server or a data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line) or wireless (e.g., infrared, wireless, microwave, etc.) mode. The computer-readable storage medium can be any available medium that a computer can store or a data storage device such as a server or a data center that includes one or more available media integration. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium), or a semiconductor medium (e.g., a solid state disk (SSD)), etc.

[0127] The technical solution provided by the present invention is introduced in detail above. The present invention applies specific examples to illustrate the principle and implementation mode of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation mode and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

[0128] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, optical storage, etc.) containing computer-usable program code.

[0129] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1A device that provides the functions specified in a block or multiple blocks.

[0130] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0131] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0132] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A method for locating a flash memory problem, characterized in that: include: Collecting threshold distribution data of key indicators of the faulty flash memory, wherein the key indicators include preset flash memory extension function parameters; Inputting the threshold distribution data of the key indicator into an abnormal threshold distribution map database to obtain a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database; Determine a second abnormal threshold distribution map among the first abnormal threshold distribution maps, which has the strongest similarity to the threshold distribution data of the key indicator; The problem corresponding to the second abnormal threshold distribution diagram is determined as the problem of the faulty flash memory.

2. The method for locating a flash memory problem according to claim 1, characterized in that: Before inputting the threshold distribution data of the key indicator into the abnormal threshold distribution map database to obtain the first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database, the method further includes: Collecting third threshold distribution data of key indicators when the flash memory works normally, and collecting fourth threshold distribution data of key indicators when problems occur in the flash memory and when the problems occur in the flash memory; Generate an abnormal threshold distribution graph of the key indicator of the problem according to the third threshold distribution data and the fourth threshold distribution data; Associating the problem with an abnormal threshold distribution diagram of a key indicator corresponding to the problem to generate an association relationship; The problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the association relationship are stored in the abnormal threshold distribution map database.

3. The method for locating a flash memory problem according to claim 2, characterized in that: The collecting of the third threshold distribution data of the key indicator when the flash memory works normally, and the collecting of the fourth threshold distribution data of the key indicator when the problem occurs in the flash memory and the problem occurs in the flash memory, include: Collect the third threshold distribution data of the first key indicator when the flash memory works normally, and collect historical problems that occurred in the flash memory and the fifth threshold distribution data of the first key indicator when the flash memory occurred the historical problems; Generate sixth threshold distribution data of a second key indicator related to the historical problem, wherein the second key indicator is a flash memory extension function parameter, and the fourth threshold distribution data includes the fifth threshold distribution data and the sixth threshold distribution data.

4. The method for locating a flash memory problem according to claim 3, characterized in that: The generating sixth threshold distribution data of the second key indicator related to the historical problem includes: Determining the flash memory extended function parameters related to flash memory performance and flash memory problems; Changing the threshold of the flash memory extension function parameter and observing the working status of the flash memory; When a fault occurs in the flash memory and the fault is the historical problem, it is confirmed that the threshold of the flash memory extension function parameter at the current moment is the sixth threshold distribution data related to the historical problem.

5. The method for locating a flash memory problem according to claim 4, characterized in that: The determining of the flash memory extended function parameters related to the flash memory performance and the flash memory problem comprises: Observe the change of the performance parameter value of the flash memory and the working state of the flash memory when the value of the preset flash memory extension function parameter changes; The preset flash memory extended function parameter that will cause the performance parameter value of the flash memory to change and / or the working state of the flash memory to change is determined as the flash memory extended function parameter related to the flash memory performance and the flash memory problem.

6. The method for locating a flash memory problem according to any one of claims 2 to 5, characterized in that: The associating the problem with the abnormal threshold distribution diagram of the key indicator corresponding to the problem to generate an association relationship includes: Based on the hierarchical relationship between the key indicators, the key indicators are divided into levels, wherein the key indicators of a higher level include the key indicators of a lower level; Key indicators with higher levels have a higher priority for problem finding; The association relationship is generated based on the problem, the abnormal threshold distribution diagram of the key indicator corresponding to the problem, and the problem search sequence.

7. The method for locating a flash memory problem according to claim 6, characterized in that: The storing the problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, and the association relationship in the abnormal threshold distribution map database includes: Tracing the key indicators corresponding to the problem, wherein the tracing order is from high to low levels of the key indicators; According to the tracing order of the key indicators, specific solutions corresponding to the problems are generated step by step, wherein each key indicator corresponds to a solution; The problem, the abnormal threshold distribution map of the key indicator corresponding to the problem, the association relationship and the specific solution corresponding to the problem are stored in the abnormal threshold distribution map database.

8. A device for locating flash memory problems, characterized in that: include: A collection module, used for collecting threshold distribution data of key indicators of the faulty flash memory, wherein the key indicators include preset flash memory extension function parameters; A distribution map acquisition module, used for inputting the threshold distribution data of the key indicator into an abnormal threshold distribution map database, and obtaining a first abnormal threshold distribution map corresponding to the key indicator in the abnormal threshold distribution map database; A similarity comparison module, used to determine, among the first abnormal threshold distribution graph, a second abnormal threshold distribution graph having the strongest similarity to the threshold distribution data of the key indicator; A problem determination module is used to determine the problem corresponding to the second abnormal threshold distribution diagram as a problem of the faulty flash memory.

9. A computer device, characterized in that: The device includes a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other via the communication bus; Memory, used to store computer programs; A processor is used to implement the steps of the flash memory problem locating method described in any one of claims 1 to 7 when executing a program stored in a memory.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for locating a flash memory problem according to any one of claims 1 to 7 are implemented.

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