Automatic answering BMU measuring device and testing method

Abstract

The invention aims to provide an automatic answering BMU measuring device and a testing method. The BMU measuring device comprises a to-be-tested signal source, the to-be-tested signal source comprises an input signal end and a detection signal end, the BMU measuring device with the automatic response function further comprises a self-response circuit, the self-response circuit is connected with an operational amplifier amplification circuit, the operational amplifier amplification circuit is connected with an MCU module, and the MCU module is connected with an upper computer; the self-response circuit comprises a delay chip, a first electronic switch, a second electronic switch, a third electronic switch and a field effect transistor, the input signal end is connected with the delay chip through a first resistor, the delay chip is connected with the first electronic switch through a second resistor, the first electronic switch is connected into the operational amplifier amplification circuit through the second electronic switch, and the field effect transistor is connected with the operational amplifier amplification circuit. The detection signal end is connected with the third electronic switch through the third resistor, and the drain electrode of the field effect transistor is connected with the first electronic switch. The method and the device are applied to the technical field of BMU signal response testing.

Description

Technical Field

[0001] The present invention is applied to the technical field of BMU signal response testing, and in particular relates to an automatic response BMU measurement device and a test method. Background Art

[0002] With the continuous advancement of technology, various electronic devices, electric vehicles, etc. have an increasing demand for high-performance and reliable power systems. In the field of electric vehicles, accurate and intelligent battery management has become essential to achieve longer driving range, safer and more stable operation, and extend the service life of the battery. The traditional simple charging and discharging control method can no longer meet the complex application scenarios and high performance requirements, so the battery management unit came into being.

[0003] In the field of consumer electronics, devices such as smartphones and tablets are becoming more and more powerful, and their power consumption is also increasing. At the same time, people have high expectations for battery life and charging safety. This has also promoted the continuous development of BMU technology, aiming to better manage the battery inside the device and optimize its performance.

[0004] However, using real BMU modules for testing poses great challenges in terms of cost and installation volume. Testing with existing BMU modules is expensive, especially for mass-produced products. Batch testing will greatly increase testing costs. The large size also has certain space limitations, which obviously increases the difficulty of installation for fixtures that already have insufficient space.

[0005] The PCBA board-level measurement circuit uses the inherent control logic and the software code control logic to implement the hard feedback mechanism. There are MCU control delays and code execution intervals on different platforms. The test time in different environments varies greatly, and there are certain risks. At the same time, code control and environmental configuration are also required to adapt to different operating platforms. Existing technologies require software code coordination, and with more and more test modules, the diversity of platforms is presented. Developers need to continuously upgrade the code to be compatible with different platform calls. The requirements for different products will also be different, and it is difficult to achieve the unification of code and hardware.

[0006] Therefore, it is necessary to provide an automatic response BMU measurement device with high integration, good compatibility, small space occupation, strong practicality, low cost, and the ability to autonomously respond to test needs, reducing dependence on code, and realizing the BMU response mechanism in a fixed manner, combined with operational amplifier amplification circuit storage, to meet test requirements while reducing test time. Summary of the invention

[0007] The technical problem to be solved by the present invention is to overcome the shortcomings of the prior art and provide an automatic response BMU measurement device and test method, which has high integration, good compatibility, small space occupation, strong practicality, low cost, and can autonomously respond to test needs, reducing dependence on code, and realizing the response mechanism of BMU in a fixed manner, cooperating with operational amplifier amplification circuit storage, thereby meeting test requirements while reducing test time.

[0008] The technical solution adopted by the present invention is: the present invention includes a signal source to be tested, the signal source to be tested includes an input signal end and a detection signal end, the automatic response BMU measuring device also includes a self-response circuit, the self-response circuit is connected to an operational amplifier amplifier circuit, the operational amplifier amplifier circuit is connected to an MCU module, and the MCU module is connected to a host computer; the self-response circuit includes a delay chip, a first electronic switch, a second electronic switch, a third electronic switch and a field effect transistor, the input signal end is connected to the delay chip via a first resistor, the delay chip is connected to the first electronic switch via a second resistor, the first electronic switch is connected to the operational amplifier amplifier circuit via the second electronic switch, the detection signal end is connected to the third electronic switch via a third resistor, the drain of the field effect transistor is connected to the first electronic switch, and the gate of the field effect transistor is divided into two paths, one path is connected to the third electronic switch, and the other path is connected to VCCP_1V8 via a fourth resistor.

[0009] As can be seen from the above scheme, the present application adopts an integrated circuit module with good compatibility, small space occupation, strong practicality and low cost, providing a high-quality solution for the testing industry, which can respond to the test needs autonomously, reduce the dependence on the code, and realize the response mechanism of BMU in a fixed way, cooperate with the operational amplifier amplification circuit storage, while meeting the test needs and reducing the test time, and using the characteristics of the logic gate and delay chip to reverse the product signal to trigger, to achieve a feedback mechanism within a fixed time range, with wide applicability and strong reliability. By using the rail-to-rail characteristics of the operational amplifier and setting the amplification factor large enough, the output signal can be adjusted to a known signal, which is more conducive to the back-end data collection and has high integration. The circuit has been verified by mass production, is stable and reliable to use, and is easy to transplant; it can be separated from the control of the software to achieve automatic triggering of the output circuit, which greatly reduces the debugging work and maintenance costs of engineers.

[0010] A preferred solution is that the op amp amplification circuit includes a follower, a comparator, and a fourth electronic switch, the positive input terminal of the follower is connected to the COM terminal of the second electronic switch via a fifth resistor, the output terminal of the follower is connected to the NO terminal of the fourth electronic switch via the comparator, and the COM terminal of the fourth electronic switch is connected to the EDGE_DETECT terminal of the MCU module.

[0011] A preferred solution is that the DO_333 terminal of the MCU module is connected to the port corresponding to the third electronic switch, the DO_314 terminal of the MCU module is connected to the port corresponding to the fourth electronic switch, and the drain of the field effect tube is connected to VCCP_3V3 via the sixth resistor.

[0012] A preferred embodiment is that the test method comprises the following steps: Step 1, the MCU module controls GPIO DO_333 to be high, the third electronic switch is turned on, and the detection signal end is pulled up to 1.8V by the fourth resistor through the third electronic switch; Step 2: When the detection signal terminal is pulled low, the GS of the field effect tube is less than 0, and the field effect tube stops working; Step 3, the sixth resistor enables the first electronic switch to pull up 3.3V to start working, and conducts 3.3V to the right end of the second resistor through the first electronic switch; Step 4, after the left end of the second resistor is output to the delay chip, the input signal end starts to be pulled up after a delay of 50mS; Step 5, when the input signal terminal detects a high level, the detection signal terminal will become high; Step 6: When the detection signal terminal is pulled high, the GS of the field effect tube is greater than 0, and the field effect tube starts to work; Step 7, the field effect tube will pull down the first electronic switch enable, and the first electronic switch will disconnect 3.3V->R1063; Step 8, after the left end of the second resistor is suspended, after the delay chip delays for 50 mS, the input signal end is released; Step 9: Finally, the MCU module controls GPIO DO_333 to be low, completing the self-response process; Step 10: Follow the self-response process and the detection process begins; Step 11, the detection signal terminal is connected to the left end of R1109; Step 12, TP_DISP_VBAT_L passes through the fifth resistor and the follower to obtain an isolated high-level signal; Step 13, the isolation signal is sent to the positive terminal of the comparator U3, and compared with the negative terminal 0.9V of the comparator; Step 14: When the signal is greater than 0.9V, the 6th pin of U3 outputs a high level; Step 15, when the signal is less than 0.9V, the 6th pin of the comparator outputs a low level; Step 16, the MCU module controls DO_314 to be high in advance, and leads the signal to the PA4 pin of the MCU module through the fourth electronic switch, and detects the rising edge mechanism through FW; Step 17: The number of jumps of the detection signal end is finally obtained and stored in the test result through software. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a system block diagram of the present invention; Figure 2 It is a schematic diagram of the present invention; Figure 3 is a circuit schematic diagram of the self-response circuit; Figure 4 is a circuit schematic diagram of the operational amplifier amplifier circuit; Figure 5 is a circuit schematic diagram of the MCU module; Figure 6 It is the waveform diagram of the signal self-response circuit of the present invention. DETAILED DESCRIPTION

[0014] like Figures 1 to 3 As shown, in this embodiment, the present invention includes a signal source to be tested 1, the signal source to be tested 1 includes an input signal terminal TP_LEDCTRL_VBAT and a detection signal terminal TP_DISP_VBAT_L, the automatic response BMU measurement device also includes a self-response circuit 2, the self-response circuit 2 is connected to an operational amplifier circuit 3, the operational amplifier circuit 3 is connected to an MCU module 4, and the MCU module 4 is connected to a host computer 5; the self-response circuit 2 includes a delay chip U173, a first electronic switch U176, a second electronic switch U83, a third electronic switch U178 and a field effect transistor U177, the input signal terminal TP_LEDCTRL_VBAT BAT is connected to the delay chip U173 via the first resistor R1064, the delay chip U173 is connected to the first electronic switch U176 via the second resistor R1063, the first electronic switch U176 is connected to the operational amplifier circuit 3 via the second electronic switch U83, the detection signal terminal TP_DISP_VBAT_L is connected to the third electronic switch U178 via the third resistor R1074, the drain of the field effect transistor U177 is connected to the first electronic switch U176, the gate of the field effect transistor U177 is divided into two paths, one path is connected to the third electronic switch U178, and the other path is connected to VCCP_1V8 via the fourth resistor R1072.

[0015] The signal source 1 to be tested is the BMU detection circuit of the product. The host computer 5 interacts with the MCU module 4 through a serial port or network port communication tool. By controlling the MCU module 4 to issue personalized instructions, it can capture the instantaneous state and then further calculate, analyze, store and display the measurement results. This module is an optional option and can implement an offline solution. By modifying the program, the MCU module 4 can achieve automatic response. The MCU module 4 uses the I / O port and the counting function of the program to effectively measure the frequency and number of input signals.

[0016] The operational amplifier circuit 3 isolates and protects the product signal from the test module. After the output signal passes through the comparator and amplification, it will stably output a signal source to the MCU module 4 for testing and calculation of related parameters. The self-response circuit 2 uses the detection mechanism of the signal source 1 to be tested through the signal source 1 to be tested. When working, it will generate an addressing signal. The signal will trigger the gate circuit, combined with the resistor and the delay chip, and after a fixed interval delay for a moment, it will finally be fed back to the detection end of the product. At the same time, the trigger signal will be transmitted to the upper circuit for processing and calculation.

[0017] The MCU module 4 includes a main control chip U8, the model of the main control chip U8 is STM32F429ZE, and the I / O pins of PC6 / PC7 of the main control chip U8 are configured for frequency counting measurement; the operational amplifier amplifier circuit 3 outputs a fixed 0-3.3V PWM wave for measurement. The operational amplifier amplifier circuit 3 is that the present application can realize the follow-up comparison of small amplitude signals, and finally output a stable signal. By using the combination of operational amplifier amplifier and logic gates, when the circuit is automatically triggered, it can also be tested by a single-chip microcomputer, and the number of triggers is stored for test results, which is convenient for debugging and use. After comparison with the real BMU, the waveform and test data are highly in line with the design requirements of the product, reducing costs and implementing quantification. It has high integration and stability, and is convenient for subsequent design development and transplantation. It can be applied to FCT test equipment. The present application has high integration, small space occupation, strong practicality, flexible use, strong portability, and low cost. At the same time, this application utilizes multiple levels of coordination such as operational amplifiers, comparators, simple logic gates, and delay circuits to meet the needs of different product battery systems, and can convert and measure product signal equivalents. It can isolate product signals and measure product behavior. At the same time, the advantage of this application is that it can realize offline mode, that is, when the microcontroller is not online, it can also trigger feedback through inherent behavior, and can be horizontally expanded to offline testing, which can reduce testing costs to a greater extent.

[0018] like Figure 4As shown, in this embodiment, the operational amplifier amplifier circuit 3 includes a follower U180, a comparator U3, and a fourth electronic switch U62. The positive input end of the follower U180 is connected to the COM end of the second electronic switch U83 via the fifth resistor R1109, and the output end of the follower U180 is connected to the NO end of the fourth electronic switch U62 via the comparator U3. The COM end of the fourth electronic switch U62 is connected to the EDGE_DETECT end of the MCU module 4.

[0019] like Figure 5 As shown, in this embodiment, the DO_333 end of the MCU module 4 is connected to the port corresponding to the third electronic switch U178, the DO_314 end of the MCU module 4 is connected to the port corresponding to the fourth electronic switch U62, and the drain of the field effect transistor U177 is connected to VCCP_3V3 via the sixth resistor R1067.

[0020] like Figure 1 and Figure 2 As shown, in this embodiment, the testing method includes the following steps: Step 1, the MCU module 4 controls the GPIO DO_333 to be high, the third electronic switch U178 is turned on, and the detection signal terminal TP_DISP_VBAT_L is pulled up to 1.8V by the fourth resistor R1072 through the third electronic switch U178; Step 2, when the detection signal terminal TP_DISP_VBAT_L is pulled low, the GS of the field effect transistor U177 is less than 0, and the field effect transistor U177 stops working; Step 3, the sixth resistor R1067 enables the first electronic switch U176 to pull up 3.3V to start working, and conducts 3.3V to the right end of the second resistor R1063 through the first electronic switch U176; Step 4, after the left end of the second resistor R1063 is output to the delay chip U173, it starts to pull up the input signal terminal TP_LEDCTRL_VBAT after a delay of 50mS; Step 5, when the input signal terminal TP_LEDCTRL_VBAT detects a high level, the detection signal terminal TP_DISP_VBAT_L becomes high; Step 6, when the detection signal terminal TP_DISP_VBAT_L is pulled high, the GS of the field effect transistor U177 is greater than 0, and the field effect transistor U177 starts to work; Step 7, the field effect transistor U177 will enable the first electronic switch U176 and pull it down, and the first electronic switch U176 will disconnect 3.3V->R1063; Step 8, after the left end of the second resistor R1063 is suspended, after the delay chip U173 delays for 50mS, the input signal terminal TP_LEDCTRL_VBAT is released and suspended; Step 9: Finally, the MCU module 4 controls GPIO DO_333 to be low, completing the self-response process; Step 10: Follow the self-response process and the detection process begins; Step 11, the detection signal terminal TP_DISP_VBAT_L is connected to the left end of R1109; Step 12, TP_DISP_VBAT_L passes through the fifth resistor R1109 and the follower U180 to obtain an isolated high level signal; Step 13, the isolation signal is sent to the positive terminal of the comparator U3U3, and compared with the negative terminal 0.9V of the comparator U3; Step 14: When the signal is greater than 0.9V, the 6th pin of U3 outputs a high level; Step 15, when the signal is less than 0.9V, the pin 6 of the comparator U3 outputs a low level; Step 16, the MCU module 4 controls DO_314 to be high in advance, and leads the signal to the PA4 pin of the MCU module 4 through the fourth electronic switch U62, and detects the rising edge mechanism through FW; Step 17: Finally, the jump times of the detection signal terminal TP_DISP_VBAT_L are obtained and stored in the test result through software.

[0021] In this embodiment, the self-response circuit 2 can realize an autonomous feedback mechanism according to the input signal. The self-response circuit 2 includes an operational amplifier circuit, a logic gate circuit, and a delay circuit. The operational amplifier circuit: The model of the follower U180 is OPA2196. The product signal first passes through the follower U180 and then flows into the comparator U3, and outputs a steady-state signal after comparison. Logic gate circuit: using the detection signal of the product, the control signal of the field effect tube U177 is pulled down, and the high level is released and fed back to the product; Delay circuit: The model of the delay chip U173 is APX803505. By utilizing the characteristics of the delay chip U173, feedback is given to the product end after a delay of 50mS.

[0022] The actual application effect of this design circuit is as follows Figure 6 As shown: Channel 2: The input signal of the front end of the delay circuit is low by default. When triggered, the high level returns to the low level state after a delay of 30mS; Three channels: The feedback signal output by the delay circuit generates a trigger signal to the product after a delay of 30mS after being triggered; Four channels: The detection signal of the product is high by default. When triggered, the low level will return to the high level state after a delay of 30mS.

[0023] Although the embodiments of the present invention are described with practical solutions, they do not constitute limitations on the meaning of the present invention. For those skilled in the art, it is obvious to modify the implementation scheme and combine it with other solutions based on this description.

Claims

1. An automatic response BMU measurement device, comprising a signal source to be tested (1), wherein the signal source to be tested (1) comprises an input signal terminal (TP_LEDCTRL_VBAT) and a detection signal terminal (TP_DISP_VBAT_L), characterized in that: The automatic response BMU measuring device further comprises a self-response circuit (2), wherein the self-response circuit (2) is connected to an operational amplifier circuit (3), wherein the operational amplifier circuit (3) is connected to an MCU module (4), wherein the MCU module (4) is connected to a host computer (5); the self-response circuit (2) comprises a delay chip (U173), a first electronic switch (U176), a second electronic switch (U83), a third electronic switch (U178) and a field effect transistor (U177), wherein the input signal terminal (TP_LEDCTRL_VBAT) is connected to the delay chip (U173) via a first resistor (R1064), and the delay chip (U178) is connected to the delay chip (U173). 73) is connected to the first electronic switch (U176) via a second resistor (R1063), the first electronic switch (U176) is connected to the operational amplifier circuit (3) via the second electronic switch (U83), the detection signal terminal (TP_DISP_VBAT_L) is connected to the third electronic switch (U178) via a third resistor (R1074), the drain of the field effect transistor (U177) is connected to the first electronic switch (U176), the gate of the field effect transistor (U177) is divided into two paths, one path is connected to the third electronic switch (U178), and the other path is connected to VCCP_1V8 via a fourth resistor (R1072).

2. The automatic response BMU measuring device according to claim 1, characterized in that: The operational amplifier circuit (3) comprises a follower (U180), a comparator (U3), and a fourth electronic switch (U62); the positive input terminal of the follower (U180) is connected to the COM terminal of the second electronic switch (U83) via a fifth resistor (R1109); the output terminal of the follower (U180) is connected to the NO terminal of the fourth electronic switch (U62) via the comparator (U3); and the COM terminal of the fourth electronic switch (U62) is connected to the EDGE_DETECT terminal of the MCU module (4).

3. The automatic response BMU measuring device according to claim 2, characterized in that: The DO_333 terminal of the MCU module (4) is connected to a port corresponding to the third electronic switch (U178), the DO_314 terminal of the MCU module (4) is connected to a port corresponding to the fourth electronic switch (U62), and the drain of the field effect tube (U177) is connected to VCCP_3V3 via the sixth resistor (R1067).

4. A method for testing the automatic response BMU measuring device according to claim 3, characterized in that: The test method comprises the following steps: Step 1, the MCU module (4) controls GPIO DO_333 to be high, the third electronic switch (U178) is turned on, and the detection signal terminal (TP_DISP_VBAT_L) is pulled up to 1.8V by the fourth resistor (R1072) through the third electronic switch (U178); Step 2: When the detection signal terminal (TP_DISP_VBAT_L) is pulled low, the GS of the field effect tube (U177) is less than 0, and the field effect tube (U177) stops working; Step 3, the sixth resistor (R1067) enables the first electronic switch (U176) to pull up 3.3V to start working, and conducts 3.3V to the right end of the second resistor (R1063) through the first electronic switch (U176); Step 4: After the left end of the second resistor (R1063) is output to the delay chip (U173), it starts to pull up the input signal end (TP_LEDCTRL_VBAT) after a delay of 50mS. Step 5, when the input signal terminal (TP_LEDCTRL_VBAT) detects a high level, the detection signal terminal (TP_DISP_VBAT_L) becomes high; Step 6: When the detection signal terminal (TP_DISP_VBAT_L) is pulled high, the GS of the field effect tube (U177) is greater than 0, and the field effect tube (U177) starts to work; Step 7, the field effect tube (U177) will enable the first electronic switch (U176) and pull it down, and the first electronic switch (U176) will disconnect 3.3V->R1063; Step 8, after the left end of the second resistor (R1063) is suspended, after the delay chip (U173) delays for 50ms, the input signal end (TP_LEDCTRL_VBAT) is released and suspended; Step 9: Finally, the MCU module (4) controls GPIO DO_333 to be low, completing the self-response process; Step 10: Follow the self-response process and the detection process begins; Step 11, the detection signal terminal (TP_DISP_VBAT_L) is connected to the left end of R1109; Step 12, TP_DISP_VBAT_L passes through the fifth resistor (R1109) and the follower (U180) to obtain an isolated high-level signal; Step 13, the isolation signal is sent to the positive terminal of the comparator (U3) U3, and compared with the negative terminal 0.9V of the comparator (U3); Step 14: When the signal is greater than 0.9V, the 6th pin of U3 outputs a high level; Step 15, when the signal is less than 0.9V, the 6th pin of the comparator (U3) outputs a low level; Step 16, the MCU module (4) controls DO_314 to be high in advance, and leads the signal to the PA4 pin of the MCU module (4) through the fourth electronic switch (U62), and detects the rising edge mechanism through FW; Step 17: Finally, the jump times of the detection signal terminal (TP_DISP_VBAT_L) are obtained and stored in the test results through software.

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