Ultra-wideband switch structure and gallium nitride switch chip based on ultra-wideband switch structure

Abstract

The invention discloses an ultra wide band switch structure and a gallium nitride switch chip based on the ultra wide band switch structure, relates to the technical field of microwave integrated circuit switch chips, and provides a switch structure which is compact in structure, low in insertion loss and high in isolation degree so as to adapt to the requirements of a future radio frequency communication system. Comprising an input matching module, a first GaN switching tube module, a second GaN switching tube module, a first low-pass filtering module and a second low-pass filtering module. And the input matching module is used for connecting the first GaN switching tube module and the second GaN switching tube module in series, and is used for converting the input impedance of the ultra-wideband switching structure into the source impedance of a previous-stage circuit. The output end of the first GaN switching tube module is connected with the first low-pass filtering module, the output end of the second GaN switching tube module is connected with the second low-pass filtering module, and both the first low-pass filtering module and the second low-pass filtering module adopt Chebyshev I-type filter structures.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave integrated circuit switch chips, and in particular to an ultra-wideband switch structure and a gallium nitride switch chip based on the ultra-wideband switch structure. Background Art

[0002] With the development of RF wireless communication systems, the emergence of new application scenarios including aerospace, phased array radar and 5G base stations has put forward higher requirements on the performance of switch chips. In almost all transmission systems, switch chips are indispensable. They are the core modules that determine the linearity, power consumption and efficiency of the system. With the emergence of new application scenarios, the performance requirements for switch chips are getting higher and higher. For example, high linearity, low insertion loss, large bandwidth and compact circuit area are required. In the future, society will face severe energy problems and the requirements of global carbon peak and carbon neutrality, which requires reducing energy consumption. Therefore, the demand for switch chips will continue to increase. The high performance and high efficiency of switch chips will become one of the key technologies to meet the needs of new applications and energy conservation and emission reduction.

[0003] Therefore, there is a need to provide a switch chip that can better meet the needs of future radio frequency communication systems. Summary of the invention

[0004] The purpose of the present invention is to provide an ultra-wideband switch structure and a gallium nitride switch chip based on the ultra-wideband switch structure, so as to provide a switch structure with compact structure, low insertion loss and high isolation, so as to meet the technical requirements of future radio frequency communication systems.

[0005] In a first aspect, the present invention discloses an ultra-wideband switch structure, including: an input matching module, a first GaN switch tube module, a second GaN switch tube module, a first low-pass filter module and a second low-pass filter module.

[0006] The input matching module is used to connect the first GaN switch tube module and the second GaN switch tube module in series from the input end of the first GaN switch tube module and the input end of the second GaN switch tube module, and to convert the input impedance of the ultra-wideband switch structure into the source impedance of the upper-level circuit.

[0007] The output end of the first GaN switch tube module is connected to the first low-pass filter module, and the output end of the second GaN switch tube module is connected to the second low-pass filter module, wherein the sizes of the switches in the first GaN switch tube module and the second GaN switch tube module are the same, and the first low-pass filter module and the second low-pass filter module both adopt a Chebyshev type I filter structure.

[0008] In the case of adopting the above technical solution, the ultra-wideband switch structure includes a first GaN switch tube module and a second GaN switch tube module connected in series, the output end of the first GaN switch tube module is connected to the first low-pass filter module, the output end of the second GaN switch tube module is connected to the second low-pass filter module, and the input end uses an input matching network to connect the input end of the first GaN switch tube module and the input end of the second GaN switch tube module, and matches the input impedance to the source impedance. In addition, the size of the switch tubes in the first GaN switch tube module and the second GaN switch tube module is the same, and its size mainly depends on the linearity, isolation and insertion loss. The first low-pass filter module and the second low-pass filter module both adopt a Chebyshev I-type filter structure to achieve flat in-band gain fluctuations and fast out-of-band roll-off speed. In the present invention, due to the introduction of the low-pass filter, the operating bandwidth of the ultra-wideband switch structure is improved, and low insertion loss characteristics can be achieved within the working bandwidth, further improving the isolation of the ultra-wideband switch structure.

[0009] Furthermore, the first low-pass filtering module and the second low-pass filtering module adopt a Chebyshev type I filter structure to obtain sufficiently flat in-band gain fluctuation and fast out-of-band roll-off speed. The parallel capacitors of the first low-pass filtering module and the second low-pass filtering module are equivalent to parallel switching tubes, and the inductors are replaced by transmission lines to obtain more precise impedance tuning accuracy and a more compact area.

[0010] Furthermore, the input matching module includes a first transmission line, a second transmission line and a third transmission line, the first transmission line is connected to the first end of the second transmission line and the first end of the third transmission line, the second end of the second transmission line is connected to the input end of the first GaN switch tube module, and the second end of the third transmission line is connected to the input end of the second GaN switch tube module.

[0011] Furthermore, the first GaN switch tube module includes a first transistor and a first series resistor, the input end of the first transistor is connected to the first output end of the input matching module, the control end of the first transistor is connected in series with the first series resistor and then connected to the first voltage control end, and the output end of the first transistor is connected to the input end of the first low-pass filter module.

[0012] Furthermore, the second GaN switch tube module includes a second transistor and a second series resistor, the input end of the second transistor is connected to the second output end of the input matching module, the control end of the second transistor is connected in series with the second series resistor and then connected to the second voltage control end, and the output end of the second transistor is connected to the input end of the second low-pass filter module.

[0013] Furthermore, the first transistor and the second transistor both adopt 3x100um GaN high electron mobility transistors, and the control terminals of the first transistor and the second transistor both use -20V as a shutdown signal and 0V as a start signal.

[0014] Furthermore, the resistance values ​​of the first series resistor and the second series resistor are greater than or equal to a preset value.

[0015] Further, the first low-pass filtering module includes a fourth transmission line, a fifth transmission line, a sixth transmission line and a seventh transmission line connected in series; the first low-pass filtering module also includes a third transistor, a fourth transistor, a fifth transistor, a third series resistor, a fourth series resistor and a fifth series resistor, the input end of the third transistor is connected between the fourth transmission line and the fifth transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the third series resistor, the input end of the fourth transistor is connected between the fifth transmission line and the sixth transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the fourth series resistor, the input end of the fifth transistor is connected between the sixth transmission line and the seventh transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the fifth series resistor;

[0016] Furthermore, the second low-pass filtering module includes an eighth transmission line, a ninth transmission line, a tenth transmission line and an eleventh transmission line connected in series; the second low-pass filtering module also includes a sixth transistor, a seventh transistor, an eighth transistor, a sixth series resistor, a seventh series resistor and an eighth series resistor, the input end of the sixth transistor is connected between the eighth transmission line and the ninth transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the sixth series resistor, the input end of the seventh transistor is connected between the ninth transmission line and the tenth transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the seventh series resistor, the input end of the eighth transistor is connected between the tenth transmission line and the eleventh transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the eighth series resistor.

[0017] Furthermore, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor and the eighth transistor are all GaN switch transistors.

[0018] In a second aspect, the present invention further provides a gallium nitride switch chip with an ultra-wideband switch structure, wherein the slot-shaped structure is etched according to the etching control method of the slot-shaped structure to obtain

[0019] Compared with the prior art, the beneficial effects of the second aspect of the present invention are the same as the beneficial effects of the ultra-wideband switch structure of the above technical solution, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0021] Figure 1 A circuit diagram of an ultra-wideband switch structure provided by an embodiment of the present invention;

[0022] Figure 2 The S parameter simulation result of a Chebyshev type I filter provided by an embodiment of the present invention;

[0023] Figure 3 The S-parameter electromagnetic field simulation result of an ultra-wideband switch structure provided by an embodiment of the present invention;

[0024] Figure 4 The simulation result of 1dB gain compression point of an ultra-wideband switch structure provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.

[0026] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.

[0027] With the development of RF wireless communication systems, the emergence of new application scenarios including aerospace, phased array radar and 5G base stations has put forward higher requirements on the performance of switch chips. In almost all transmission systems, switch chips are indispensable. They are the core modules that determine the linearity, power consumption and efficiency of the system. With the emergence of new application scenarios, the performance requirements for switch chips are getting higher and higher. For example, high linearity, low insertion loss, large bandwidth and compact circuit area are required. In the future, society will face severe energy problems and the requirements of global carbon peak and carbon neutrality, which requires reducing energy consumption. Therefore, the demand for switch chips will continue to increase. The high performance and high efficiency of switch chips will become one of the key technologies to meet the needs of new applications and energy conservation and emission reduction.

[0028] Therefore, it is currently necessary to provide a switch chip that can better meet the needs of future radio frequency communication systems. Figure 1 An embodiment of the present invention provides an ultra-wideband switch structure, including: an input matching module 10, a first GaN switch tube module 201, a second GaN switch tube module 202, a first low-pass filter module 301 and a second low-pass filter module 302.

[0029] The input matching module 10 is used to connect the first GaN switch tube module 201 and the second GaN switch tube module 202 in series from the input end of the first GaN switch tube module 201 and the input end of the second GaN switch tube module 202, and to convert the input impedance of the ultra-wideband switch structure into the source impedance of the upper stage circuit.

[0030] The output end of the first GaN switch tube module 201 is connected to the first low-pass filter module 301, and the output end of the second GaN switch tube module 202 is connected to the second low-pass filter module 302, wherein the sizes of the switches in the first GaN switch tube module 201 and the second GaN switch tube module 202 are the same, and the first low-pass filter module 301 and the second low-pass filter module 302 both adopt a Chebyshev type I filter structure.

[0031] It should be understood that GaN switches have many advantages that make them an ideal choice for RF and power electronics applications. First, GaN switches have very fast switching speeds, which can achieve high-frequency operation, giving them advantages in RF applications. Second, GaN switches have low conduction and switching losses, which can achieve higher efficiency and lower energy consumption. In addition, GaN switches also have high power density, which can provide higher power output in a smaller volume. In addition, GaN switches have a wide operating temperature range and are suitable for a variety of environmental conditions. Finally, GaN switches have high reliability and long life, can withstand higher voltages and currents, and extend the service life of the equipment.

[0032] The development of GaN technology helps to realize compact ultra-wideband, high-linearity switch chips to meet the needs of efficient, high-bandwidth signal processing and transmission. In the aerospace and defense fields, GaN switch tubes are used in communications, radar, and power systems of aircraft and missiles to achieve higher performance and reliability. In addition, GaN switch tubes are also used in medical equipment such as medical imaging, lasers, and surgical equipment, improving the performance and reliability of medical equipment. Ultra-wideband millimeter-wave gallium nitride switch chips are of great significance for practical applications, especially the proposal of a new switch structure that can realize ultra-wideband, high-linearity, and low-insertion-loss gallium nitride switch chips in a compact chip area.

[0033] Based on the above description, the ultra-wideband switch structure provided by the embodiment of the present invention includes a first GaN switch tube module and a second GaN switch tube module connected in series, the output end of the first GaN switch tube module is connected to the first low-pass filter module, the output end of the second GaN switch tube module is connected to the second low-pass filter module, and the input end uses an input matching network to connect the input end of the first GaN switch tube module and the input end of the second GaN switch tube module, and matches the input impedance to the source impedance. In addition, the size of the switch tubes in the first GaN switch tube module and the second GaN switch tube module is the same, and its size mainly depends on the linearity, isolation and insertion loss. The first low-pass filter module and the second low-pass filter module both adopt a Chebyshev I-type filter structure to achieve flat in-band gain fluctuations and fast out-of-band roll-off speed. In the present invention, due to the introduction of the low-pass filter, the operating bandwidth of the ultra-wideband switch structure is improved, and low insertion loss characteristics can be achieved within the working bandwidth, further improving the isolation of the ultra-wideband switch structure.

[0034] Furthermore, the first low-pass filtering module and the second low-pass filtering module adopt a Chebyshev type I filter structure to obtain sufficiently flat in-band gain fluctuation and fast out-of-band roll-off speed. The parallel capacitors of the first low-pass filtering module and the second low-pass filtering module are equivalent to parallel switching tubes, and the inductors are replaced by transmission lines to obtain more precise impedance tuning accuracy and a more compact area.

[0035] Further, see Figure 1 The input matching module includes a first transmission line TL1, a second transmission line TL2 and a third transmission line TL3. The first transmission line TL1 is connected to the first end of the second transmission line TL2 and the first end of the third transmission line TL3. The second end of the second transmission line TL2 is connected to the input end of the first GaN switch tube module 201. The second end of the third transmission line TL3 is connected to the input end of the second GaN switch tube module 202.

[0036] Based on this, the input matching circuit in the embodiment of the present invention is used to connect the first GaN switch tube module and the second GaN switch tube module in series, and is also used to convert the input impedance of the ultra-wideband switch structure into the source impedance of the previous stage circuit to match the previous stage circuit, ensure signal transmission, and improve the performance and efficiency of the circuit and reduce the insertion loss of the chip. The previous stage circuit can be a PA circuit (radio frequency power amplifier) ​​or an LNA circuit (low noise power amplifier). Usually, the source impedance of the PA circuit or the LNA circuit is 50 ohms. Therefore, the input matching circuit is used to convert the input impedance of the ultra-wideband switch structure into the source impedance of the previous stage circuit, which is 50 ohms.

[0037] In some examples, reference Figure 1 The first GaN switch tube module 201 includes a first transistor Q1 and a first series resistor R1. The input end of the first transistor Q1 is connected to the first output end of the input matching module 10. The control end of the first transistor Q1 is connected in series with the first series resistor R1 and then connected to the first voltage control V1 end. The output end of the first transistor Q1 is connected to the input end of the first low-pass filter module 301.

[0038] The second GaN switch tube module 202 includes a second transistor Q2 and a second series resistor R2, the input end of the second transistor Q2 is connected to the second output end of the input matching module 10, the control end of the second transistor Q2 is connected in series with the second series resistor R2 and then connected to the second voltage control end V2, and the output end of the second transistor Q2 is connected to the input end of the second low-pass filter module 302.

[0039] Furthermore, the first transistor Q1 and the second transistor Q2 both use 3x100um GaN HEMT, whose 1dB compression point is greater than 35dBm, and can handle 33dBm high-power signals. The gates of the first transistor Q1 and the first transistor Q2 use -20V as a shutdown signal and 0V as a start signal. The resistance value of the resistor R1 connected in series with the gate of the first transistor and the resistor R2 connected in series with the gate of the first transistor is greater than or equal to a preset value to improve the stability and isolation of the switch. Specifically, the preset value is 40K Ω .

[0040] In the embodiment of the present invention, refer to Figure 1 , the first low-pass filtering module 301 is connected in series with a fourth transmission line TL4, a fifth transmission line TL5, a sixth transmission line TL6 and a seventh transmission line TL7; the first low-pass filtering module 301 also includes a third transistor Q3, a fourth transistor Q4, a fifth transistor Q5, a third series resistor R3, a fourth series resistor R4 and a fifth series resistor R5, the input end of the third transistor Q3 is connected between the fourth transmission line TL4 and the fifth transmission line TL5, the output end is grounded, and the control end is electrically connected to the second voltage control end V2 through the third series resistor R3, the input end of the fourth transistor Q4 is connected between the fifth transmission line TL5 and the sixth transmission line TL6, the output end is grounded, and the control end is electrically connected to the second voltage control end V2 through the fourth series resistor R4, the input end of the fifth transistor Q5 is connected between the sixth transmission line TL6 and the seventh transmission line TL7, the output end is grounded, and the control end is electrically connected to the second voltage control end V2 through the fifth series resistor R5.

[0041] The eighth transmission line TL8, the ninth transmission line TL9, the tenth transmission line TL 10 and the eleventh transmission line TL 11 The second low-pass filter module 302 also includes a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, a sixth series resistor R6, a seventh series resistor R7 and an eighth series resistor R8, the input end of the sixth transistor Q6 is connected between the eighth transmission line TL8 and the ninth transmission line TL9, the output end is grounded, the control end is electrically connected to the first voltage control end V1 through the sixth series resistor R6, the input end of the seventh transistor Q7 is connected to the ninth transmission line TL9 and the tenth transmission line TL 10 The output end is grounded, the control end is electrically connected to the first voltage control end V1 through the seventh series resistor R7, and the input end of the eighth transistor Q8 is connected to the tenth transmission line TL 10 and the eleventh transmission line TL 11The output terminal is grounded, and the control terminal is electrically connected to the first voltage control terminal V1 through an eighth series resistor R8.

[0042] The third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor and the eighth transistor are all GaN switch transistors.

[0043] Based on the above description, the first low-pass filter module and the second low-pass filter module provided in the embodiment of the present invention are first designed with a Chebysh filter structure to obtain a flat in-band gain and an out-of-band roll-off speed, and the cut-off frequency of the filter is set to the working bandwidth of the switch. The inductance of the first low-pass filter module and the second low-pass filter module is equivalent to the source-drain parasitic capacitance of the closed GaN switch tube, and the inductance of the filter in the millimeter wave band is generally small, and a high-impedance transmission line is used for equivalent to obtain a smaller chip area and tuning accuracy. After the filter is equivalently replaced with a GaN switch tube and a transmission line, the performance of the filter is optimized again to obtain a better insertion loss and matching. In practice, the order of the filter can be compromised between isolation and chip area and power consumption to determine the appropriate order.

[0044] Based on the above, the ultra-wideband switch structure provided by the embodiment of the present invention has the advantages of simple structure, strong applicability, low insertion loss and high isolation. The present invention belongs to a microwave monolithic integrated circuit and can be widely used in 5G base stations, radars, and portable communication equipment.

[0045] Figure 2 What is presented is the S parameter simulation diagram of the first low-pass filter module or the second low-pass filter module. It can be seen from the figure that the horizontal axis in the figure represents the frequency, the vertical axis represents the magnitude, and the cut-off frequency is just near 35GHz, which reflects the precise performance of the low-pass filter module in the embodiment of the present invention. In addition, within the wide frequency range of DC-32GHz, its insertion loss is controlled to be less than 1dB, demonstrating the performance of the low-pass filter module in the embodiment of the present invention. Not only that, the fluctuation within the band is also strictly controlled within the range of less than 0.2dB, which further enhances the stability of the filter. On the whole, the low-pass filter module in the embodiment of the present invention has good in-band gain flatness and also has a fast out-of-band roll-off speed. These excellent properties make it a key component for realizing ultra-wideband switching.

[0046] In a second aspect, an embodiment of the present invention further provides a gallium nitride switch chip based on an ultra-wideband switch structure, which is used to integrate the above ultra-wideband switch structure. The chip can be manufactured based on a 0.15um GaN-on-SiC process.

[0047] It should be understood that the GaN switch chip based on the ultra-wideband switch structure has advantages in bandwidth and insertion loss over the traditional GaN switch. Traditional switch structures are difficult to achieve an ultra-wideband operating range, especially in the millimeter wave band, the isolation of the switch will drop significantly, so there is currently no GaN-based ultra-wideband millimeter wave chip reported. The ultra-wideband switch structure proposed in this patent can realize an ultra-wideband switch chip from DC to millimeter wave bands, and achieve excellent insertion loss and isolation. This ultra-wideband millimeter wave GaN switch chip can be used in a wide range of fields such as radar systems, aerospace, wireless communications, and autonomous driving.

[0048] The electromagnetic field simulation results of the GaN switch chip based on the ultra-wideband switch structure provided by the embodiment of the present invention are as follows: Figure 3 and Figure 4 shown. Figure 3 The neutral coordinates represent the frequency, and Figure 3 The S curve of the GaN switch chip at different frequencies is shown. The operating bandwidth of the switch chip is DC-32GHz, and the insertion loss within this bandwidth is as low as -0.5dB to -2.0dB, and the isolation is less than -26dB within this range. At the same time, the values ​​of S11 and S33 are both less than -10dB. Figure 4 The horizontal axis is the S parameter at different frequencies, and Figure 4 The input and output power curves of the GaN switch chip at different frequencies are also shown. The value of the 1dB gain compression point of the switch chip output reaches 33dBm. Based on the above characteristics, the ultra-wideband millimeter-wave GaN switch chip of the present invention is relatively small in size (1.2mm×0.75mm), has relatively low insertion loss, high isolation and excellent linearity. Therefore, it can be widely used in multiple scenarios such as 5G base stations, radars and portable communication equipment.

[0049] Since the embodiment of the present invention provides a groove-type structure that is obtained by etching based on the etching control method of the above-mentioned groove-type structure, the interface of the obtained groove-type structure is smoother, the roughness is improved, the barrier height in the channel tends to be consistent and can effectively avoid and isolate the occurrence of leakage, while also avoiding the non-ideal Coulomb effect caused by defects and impurities.

[0050] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0051] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.

Claims

1. An ultra-wideband switch structure, characterized in that: The ultra-wideband switch structure includes: an input matching module, a first GaN switch tube module, a second GaN switch tube module, a first low-pass filter module and a second low-pass filter module; The input matching module is used to connect the first GaN switch tube module and the second GaN switch tube module in series from the input end of the first GaN switch tube module and the input end of the second GaN switch tube module, and to convert the input impedance of the ultra-wideband switch structure into the source impedance of the upper stage circuit; The output end of the first GaN switch tube module is connected to the first low-pass filter module, and the output end of the second GaN switch tube module is connected to the second low-pass filter module, wherein the sizes of the switches in the first GaN switch tube module and the second GaN switch tube module are the same, and the first low-pass filter module and the second low-pass filter module both adopt a Chebyshev type I filter structure.

2. The ultra-wideband switch structure according to claim 1, characterized in that: The input matching module includes a first transmission line, a second transmission line and a third transmission line, the first transmission line is connected to the first end of the second transmission line and the first end of the third transmission line, the second end of the second transmission line is connected to the input end of the first GaN switch tube module, and the second end of the third transmission line is connected to the input end of the second GaN switch tube module.

3. The ultra-wideband switch structure according to claim 1, characterized in that: The first GaN switch tube module includes a first transistor and a first series resistor, the input end of the first transistor is connected to the first output end of the input matching module, the control end of the first transistor is connected in series with the first series resistor and then connected to the first voltage control end, and the output end of the first transistor is connected to the input end of the first low-pass filter module.

4. The ultra-wideband switch structure according to claim 3, characterized in that: The second GaN switch tube module includes a second transistor and a second series resistor, the input end of the second transistor is connected to the second output end of the input matching module, the control end of the second transistor is connected in series with the second series resistor and then connected to the second voltage control end, and the output end of the second transistor is connected to the input end of the second low-pass filter module.

5. The ultra-wideband switch structure according to claim 4, characterized in that: The first transistor and the second transistor are both 3x100um GaN high electron mobility transistors, and the control terminals of the first transistor and the second transistor both use -20V as a turn-off signal and 0V as a turn-on signal.

6. The ultra-wideband switch structure according to claim 4, characterized in that: The resistance values ​​of the first series resistor and the second series resistor are greater than or equal to a preset value.

7. The ultra-wideband switch structure according to claim 1, characterized in that: The first low-pass filtering module includes a fourth transmission line, a fifth transmission line, a sixth transmission line and a seventh transmission line connected in series; the first low-pass filtering module also includes a third transistor, a fourth transistor, a fifth transistor, a third series resistor, a fourth series resistor and a fifth series resistor, the input end of the third transistor is connected between the fourth transmission line and the fifth transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the third series resistor, the input end of the fourth transistor is connected between the fifth transmission line and the sixth transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the fourth series resistor, the input end of the fifth transistor is connected between the sixth transmission line and the seventh transmission line, the output end is grounded, and the control end is electrically connected to the second voltage control end through the fifth series resistor.

8. The ultra-wideband switch structure according to claim 7, characterized in that: The second low-pass filtering module includes an eighth transmission line, a ninth transmission line, a tenth transmission line and an eleventh transmission line connected in series; the second low-pass filtering module also includes a sixth transistor, a seventh transistor, an eighth transistor, a sixth series resistor, a seventh series resistor and an eighth series resistor, the input end of the sixth transistor is connected between the eighth transmission line and the ninth transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the sixth series resistor, the input end of the seventh transistor is connected between the ninth transmission line and the tenth transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the seventh series resistor, the input end of the eighth transistor is connected between the tenth transmission line and the eleventh transmission line, the output end is grounded, and the control end is electrically connected to the first voltage control end through the eighth series resistor.

9. The ultra-wideband switch structure according to claim 8, characterized in that: The third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor and the eighth transistor are all GaN switch tubes.

10. A gallium nitride switch chip based on an ultra-wideband switch structure, characterized in that: Used to integrate the ultra-wideband switch structure described in any one of claims 1-9.

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