Novel infrared beam quality analysis device and method

Abstract

The invention relates to the technical field of photoelectric detectors, in particular to a novel infrared beam quality analysis device and method, and the device comprises a UCD which is used for receiving an infrared beam and converting the infrared beam into a visible beam; the CCD is used for receiving the visible light beams emitted by the UCD, analyzing and processing the visible light beams and displaying the visible light beams through a display; the UCD comprises a visible light emitting unit, a middle connecting layer and an infrared detection unit which are connected in sequence. The visible light emitting unit comprises a hole transport layer, and the hole transport layer is made of poly-TPD. According to the scheme, the problems existing in traditional infrared beam quality analysis are solved, the analysis process is simple, the cost is low, portability and user convenience can be improved through low driving voltage, the photoelectric performance and resolution of the infrared beam quality analysis device are improved by improving the photoelectric performance and resolution of the UCD, and the application prospect is wide. Fine changes can be effectively displayed, and the device is suitable for a larger wavelength range.

Description

Technical Field

[0001] The invention relates to the technical field of photoelectric detectors, and in particular to a novel infrared beam quality analysis device and method. Background Art

[0002] Infrared beams carry key optical information such as profiles, modes and patterns; this information is vital in a variety of industrial and scientific settings. For example, in the manufacturing process, infrared diffraction is used for quality control by identifying material defects through diffraction pattern analysis. Since infrared beams are invisible, quality analysis of infrared beams is more difficult than that of visible light.

[0003] Traditional beam analyzers need to detect the collected infrared optical information using silicon or indium gallium arsenide based photodetectors and convert them into current signals; these current signals are then processed by a digital signal processor through a readout integrated circuit connected to multiple indium columns, and finally the infrared beam image is displayed on a monitor. Although traditional analyzers have excellent optoelectronic performance and stability, the adoption of this technology is limited by its complexity, high cost and high drive voltage requirements.

[0004] In addition, traditional beam profilers usually use scanning slit or camera-based spot analysis methods, which have certain limitations in resolution, wavelength range and adaptability. For example, the silicon detector of the camera-based spot analyzer has difficulty imaging longer wavelengths, and although the scanning slit beam profiler can provide higher resolution, it needs to illuminate at least ten pixels when measuring very small beams, which limits its measurement accuracy.

[0005] Therefore, there is an urgent need for a new type of infrared beam quality analysis device that can solve the problems of traditional infrared beam quality analysis being limited by complexity, high cost and high driving voltage requirements, and having certain limitations in resolution, wavelength range and adaptability. It can also simplify the analysis process, reduce costs, be driven by low voltage, and meet the requirements of optoelectronic performance and resolution to show subtle changes. Summary of the invention

[0006] One of the purposes of the present invention is to provide a novel infrared beam quality analysis device, which can solve the problems existing in traditional infrared beam quality analysis, such as being limited by complexity, high cost and high driving voltage requirements, and having certain limitations in resolution, wavelength range and adaptability. The analysis process of this scheme is simple, the cost is low, and it can be driven by low voltage, which is conducive to improving portability and user convenience. In addition, by improving the photoelectric performance and resolution of UCD, the photoelectric performance and resolution of the infrared beam quality analysis device are improved, which can effectively display subtle changes and is suitable for a larger wavelength range.

[0007] The present invention provides a basic solution 1: a novel infrared beam quality analysis device, comprising: a UCD (infrared up-conversion device), a CCD (camera) and a display;

[0008] UCD, used to receive infrared light beam and convert it into visible light beam;

[0009] CCD, used to receive the visible light beam emitted by UCD, analyze and process it, and display it on the monitor;

[0010] The UCD includes a visible light emitting unit, an intermediate connection layer and an infrared detection unit connected in sequence;

[0011] The visible light emitting unit comprises: a hole transport layer, and the material of the hole transport layer adopts poly-TPD (poly[bis(4-phenyl)(4-butylphenyl)amine]).

[0012] Furthermore, the visible light emitting unit arrangement further includes: a cathode, an electron transport layer, and a visible light emitting layer;

[0013] The cathode, the electron transport layer, the visible light emitting layer and the hole transport layer are arranged in sequence, and the hole transport layer is connected to the intermediate layer.

[0014] Furthermore, the material of the cathode layer is Al.

[0015] Furthermore, the material of the electron transport layer includes: any one of ZnO, TiO2, TPBi or a combination of two or more thereof.

[0016] Furthermore, the material of the visible light emitting layer includes: CdSe / ZnS green light quantum dots, CdSe / CdS green light quantum dots, or a combination of the two; the thickness of the visible light emitting layer is 30 to 50 nm.

[0017] Furthermore, the material of the intermediate connection layer is NiO x , thickness is 5 to 20 nm.

[0018] Furthermore, the infrared detection unit includes an infrared photosensitive layer, a hole blocking layer, and an anode substrate which are connected in sequence; and the infrared photosensitive layer is connected to the intermediate layer.

[0019] Furthermore, the material of the infrared photosensitive layer is an organic material DPP-DTT or HXY-125, which is mixed with Y6 in a preset volume ratio.

[0020] Furthermore, the hole blocking layer is made of ZnO and has a thickness of 30 to 50 nm.

[0021] Furthermore, the material of the anode substrate includes, but is not limited to: any one of indium tin oxide, indium zinc oxide, aluminum tin oxide or aluminum zinc oxide, or a combination of two or more thereof.

[0022] The second purpose of the present invention is to provide a new infrared beam quality analysis method, which can solve the problems existing in traditional infrared beam quality analysis, such as being limited by complexity, high cost and high driving voltage requirements, and having certain limitations in resolution, wavelength range and adaptability. The analysis process of this scheme is simple, the cost is low, and it can be driven by low voltage, which is conducive to improving portability and user convenience. By improving the photoelectric performance and resolution of UCD, the photoelectric performance and resolution of the infrared beam quality analysis device are improved, which can effectively display subtle changes and is suitable for a larger wavelength range.

[0023] The present invention provides basic solution 2: a novel infrared beam quality analysis method, which adopts the novel infrared beam quality analysis device mentioned above.

[0024] The working principle of this solution is: when an invisible infrared beam is irradiated, the UCD receives the infrared light and converts it into a visible light beam, and then receives (photographs) the visible light beam through the CCD, performs analysis and processing, and displays the analysis and processing results on the display. Compared with traditional infrared beam quality analysis (silicon or indium gallium arsenide based photodetectors), which requires converting the optical signal into an electrical signal and then finely reading and processing the electrical signal, this solution is limited by its complexity, high cost and high driving voltage requirements. The analysis process of this solution is simple, low cost, and can be achieved through a low driving voltage, which is conducive to improving portability and user convenience;

[0025] The hole transport layer material of UCD is poly-TPD. Compared with other hole transport layer materials, its application in UCD can better improve the photoelectric performance and resolution of UCD. The specific reasons are as follows:

[0026] Since quantum dots have a deep valence band energy level (-6.1eV), there are currently few solution-processable hole transport materials that can be used in quantum dot light-emitting diodes, mainly including PVK, TFB and poly-TPD.

[0027] Among them, PVK has a HOMO energy level of -5.8eV, which has the smallest difference with the valence band energy level of quantum dots, and is therefore widely used. Secondly, TFB is also favored due to its large hole mobility and moderate HOMO energy level (-5.4eV). Poly-TPD has the shallowest HOMO energy level (-5.2eV), is rarely used in daily life, and is not used in infrared beam quality analysis devices or UCDs at all. Then, due to the special setting of the UCD structure in this scheme, combined with the hole transport layer made of poly-TPD, the new infrared beam quality analysis device proposed in this scheme can achieve the best performance.

[0028] Specifically, before entering the visible light emitting layer, holes must pass through two interfaces: the intermediate connection layer / hole transport layer and the hole transport layer / visible light emitting layer. In comparison, the potential barrier at the hole transport layer / visible light emitting layer interface is easy to overcome. The potential barrier at the intermediate connection layer / hole transport layer interface is the key to affecting hole injection. The valence band energy level of the intermediate connection layer is -5.12 eV, which has a large difference from the HOMO energy level of PVK and TFB. Holes in NiO x / PVK or NiO x / TFB interface and diffuse laterally in the hole transport layer. x The energy level difference with poly-TPD is the smallest, and the energy levels of the two are almost equal, making it easy for holes to pass through NiO x / poly-TPD interface, migrate to the poly-TPD / QDs interface, and then enter the light-emitting layer to recombine with electrons, thereby improving the optoelectronic performance and resolution of UCD.

[0029] Compared with traditional infrared beam quality analysis (using scanning slit or camera-type spot analysis methods), there are certain limitations in resolution, wavelength range and adaptability. This scheme improves the photoelectric performance and resolution of the infrared beam quality analysis device by improving the photoelectric performance and resolution of the UCD. It can be applied to a larger wavelength range and has a simple device structure. The UCD can also be set on a flexible substrate, which has broader application prospects and higher adaptability.

[0030] In summary, this solution can solve the problems existing in traditional infrared beam quality analysis, which are limited by complexity, high cost and high driving voltage requirements, and have certain limitations in resolution, wavelength range and adaptability. The analysis process of this solution is simple, low cost, and only requires a low driving voltage, which is conducive to improving portability and user convenience. By improving the photoelectric performance and resolution of UCD, the photoelectric performance and resolution of the infrared beam quality analysis device are improved, and it can be applied to a larger wavelength range. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1It is a structural schematic diagram of an embodiment of a novel infrared beam quality analysis device of the present invention;

[0032] Figure 2 It is a structural schematic diagram of UCD in an embodiment of a novel infrared beam quality analysis device of the present invention;

[0033] Figure 3 This is a working mechanism diagram of UCD in an embodiment of a novel infrared beam quality analysis device of the present invention;

[0034] Figure 4 This is a photoelectric performance diagram of a UCD using PVK as a hole transport layer in an embodiment of a novel infrared beam quality analysis device of the present invention;

[0035] Figure 5 This is a photoelectric performance diagram of a UCD using poly-TPD as a hole transport layer in an embodiment of a novel infrared beam quality analysis device of the present invention;

[0036] Figure 6 The UCD resolution of a novel infrared beam quality analysis device according to an embodiment of the present invention using PVK as a hole transport layer;

[0037] Figure 7 The resolution of the UCD using poly-TPD as the hole transport layer in the embodiment of a novel infrared beam quality analysis device according to the embodiment of the present invention;

[0038] Figure 8 This is a diagram of an infrared beam analysis process in an embodiment of a novel infrared beam quality analysis device according to an embodiment of the present invention;

[0039] Fig. 9 It is an infrared beam diffraction diagram in an embodiment of a novel infrared beam quality analysis device according to an embodiment of the present invention;

[0040] Fig.10 It is a 2.5-dimensional graph and a diffraction profile graph of a diffraction graph in an embodiment of a novel infrared beam quality analysis device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following is further described in detail through specific implementation methods:

[0042] The figure marks in the drawings of the specification include: infrared beam 1, UCD2, CCD3, display 4, cathode 101, electron transport layer 102, visible light emitting layer 103, hole transport layer 104, intermediate connecting layer 105, infrared photosensitive layer 106, hole blocking layer 107, and anode substrate 108.

[0043] In the description of this application, unless otherwise clearly specified and limited, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance; unless otherwise specified or explained, the term "plurality" refers to two or more; the terms "connected" and "fixed" should be understood in a broad sense, for example, "connected" can be a fixed connection, a detachable connection, an integral connection, or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0044] In the description of this specification, it should be understood that the directional words such as "upper", "lower", "left", and "right" described in the embodiments of the present application are described at the angles shown in the accompanying drawings and should not be understood as limitations on the embodiments of the present application. In addition, in the context, it should also be understood that when it is mentioned that an element is connected to the "upper", "lower", "left", or "right" of another element, it can not only be directly connected to the "upper", "lower", "left", or "right" of another element, but can also be indirectly connected to the "upper", "lower", "left", or "right" of another element through an intermediate element.

[0045] The embodiment is basically as shown in the attached Figure 1 As shown: a novel infrared beam 1 quality analysis device, comprising: UCD 2, CCD 3 and display 4;

[0046] UCD2, used for receiving infrared light beam 1 and converting it into a visible light beam;

[0047] CCD3, used for receiving the visible light beam emitted by UCD2, analyzing and processing it, and displaying it through display 4;

[0048] UCD2 includes a visible light emitting unit, an intermediate connecting layer 105 and an infrared detection unit connected in sequence from top to bottom, such as Figure 2 As shown;

[0049] The material of the intermediate connection layer 105 is NiO x , the thickness is 5 to 20 nm, such as 5 nm, 10 nm, 15 nm or 20 nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable;

[0050] The visible light emitting unit is arranged above the intermediate connection layer 105, and includes, from top to bottom, a cathode 101, an electron transport layer 102, a visible light emitting layer 103, and a hole transport layer 104;

[0051] The material of the cathode 101 layer is Al, and the thickness of the cathode 101 layer in this embodiment is 100 nm;

[0052] The material of the electron transport layer 102 includes but is not limited to: any one of ZnO, TiO2, TPBi or a combination of two or more thereof; typical but non-limiting examples of the combination include: a combination of ZnO and TiO2, a combination of TPBi and ZnO, and a combination of TiO2 and TPBi;

[0053] The material of the visible light emitting layer 103 includes, but is not limited to: CdSe / ZnS green light quantum dots, CdSe / CdS green light quantum dots, or a combination of the two; the thickness of the visible light emitting layer 103 is 30 to 50 nm, such as 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable;

[0054] The material of the hole transport layer 104 is poly-TPD;

[0055] The infrared detection unit is arranged below the intermediate connection layer 105, and includes, from top to bottom, an infrared photosensitive layer 106, a hole blocking layer 107, and an anode substrate 108;

[0056] The material of the infrared photosensitive layer 106 is an organic material DPP-DTT or HXY-125, which is mixed with Y6 at a preset volume ratio, that is, DPP-DTT and Y6 are mixed at a preset volume ratio to prepare the infrared photosensitive layer (whose absorption spectrum shows obvious absorption in the range of 600-1000nm), or HXY-125 and Y6 are mixed at a preset volume ratio to prepare the infrared photosensitive layer (whose absorption spectrum shows obvious absorption in the range of 600-1100nm). In this embodiment, DPP-DTT and Y6 are used, and the preset volume ratio is 1:2, which has good photogenerated exciton ability; the thickness of the infrared photosensitive layer 106 is 20-60nm, such as 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm or 60nm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable;

[0057] The hole blocking layer 107 is made of ZnO, and has a thickness of 30-50 nm, such as 30 nm, 35 nm, 40 nm, 45 nm or 50 nm, but is not limited to the listed values, and other values ​​not listed within the range are also applicable.

[0058] The material of the anode substrate 108 includes, but is not limited to, any one of indium tin oxide, indium zinc oxide, aluminum tin oxide or aluminum zinc oxide, or a combination of two or more thereof. Typical but non-limiting examples of the combination include a combination of indium tin oxide and indium zinc oxide, a combination of indium zinc oxide and aluminum tin oxide, a combination of aluminum tin oxide and aluminum zinc oxide, a combination of aluminum zinc oxide and indium tin oxide, or a combination of indium tin oxide, indium zinc oxide and aluminum tin oxide, etc.

[0059] A substrate is disposed under the anode substrate 108 , and the substrate includes a rigid substrate or a flexible substrate, wherein the rigid substrate includes a glass substrate, and the flexible substrate includes an ultra-thin glass substrate or a polymer substrate.

[0060] The specific implementation process is as follows:

[0061] The analysis process of this scheme is as follows Figure 1 As shown, when the invisible infrared beam 1 is irradiated, UCD2 receives the infrared light and converts it into a visible light beam, and then receives (shoots) the visible light beam through CCD3, performs analysis and processing, and displays the analysis and processing results through display 4. Compared with the traditional infrared beam 1 quality analysis (silicon or indium gallium arsenide based photodetector), it is necessary to convert the optical signal into an electrical signal, and then read and process the electrical signal in detail, which is limited by its complexity, high cost and high driving voltage requirements. The analysis process of this solution is simple, low cost, and can be achieved through a low driving voltage, which is conducive to improving portability and user convenience.

[0062] The principle of UCD2 converting infrared beam 1 into visible beam is as follows: Figure 3 As shown, when the infrared light beam 1 is irradiated, the infrared photosensitive layer 106 in the infrared detection unit generates a large number of excitons after absorbing the energy of the infrared light beam 1. These excitons dissociate at the interface under the action of the electric field to form free carriers, among which electrons are collected by the anode through the hole blocking layer 107, and holes are recombined with the injected electrons in the visible light emitting layer 103 through the hole transport layer 104 to generate a large number of photons and emit visible light, that is, the holes are injected into the visible light emitting layer 103 through the hole transport layer 104 through appropriate energy level matching and radiatively recombine with the electrons injected by the cathode 101, thereby emitting visible light; CCD3 receives the visible light emitted by UCD2, uses internal software to analyze and process it, and finally displays the analysis and processing results on the display screen.

[0063] When there is no incident infrared light beam 1, holes enter through the anode of UCD2 and encounter the hole blocking layer 107. They cannot continue to enter the visible light emitting layer 103 to recombine with electrons, and thus cannot generate visible light.

[0064] In particular, the material of the hole transport layer 104 of the visible light emitting unit in this solution is poly-TPD. Compared with other hole transport layer 104 materials, the application of poly-TPD in UCD2 can better improve the photoelectric performance and resolution of UCD2. The specific reasons are as follows:

[0065] Since quantum dots have a deep valence band energy level (-6.1 eV), there are currently few solution-processable hole transport materials that can be used in quantum dot light-emitting diodes, mainly including PVK (poly (N-vinyl carbazole)), TFB (poly [9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine]) and poly-TPD.

[0066] Among them, PVK has a HOMO energy level of -5.8eV, which has the smallest difference with the valence band energy level of quantum dots, and is therefore widely used; secondly, TFB is also favored due to its large hole mobility and moderate HOMO energy level (-5.4eV); poly-TPD has the shallowest HOMO energy level (-5.2eV), is rarely used in daily life, and is not used at all in infrared beam 1 mass analysis devices; then, due to the special setting of the UCD2 structure in this scheme, combined with the hole transport layer 104 made of poly-TPD, the new infrared beam 1 mass analysis device proposed in this scheme can achieve the best performance, overcoming the technical prejudice that traditional poly-TPD has the worst performance;

[0067] Specifically, before entering the visible light emitting layer 103, holes must pass through the two interfaces of the intermediate connecting layer 105 / hole transport layer 104 and the hole transport layer 104 / visible light emitting layer. In comparison, the potential barrier at the interface of the hole transport layer 104 / visible light emitting layer is easier to overcome. The potential barrier at the interface of the intermediate connecting layer 105 / hole transport layer 104 is the key to affecting hole injection, such as Figure 3 As shown, the intermediate connection layer 105NiO x The valence band energy level of NiO is -5.12eV, which is significantly different from the HOMO energy level of PVK and TFB. x / PVK or NiO x / TFB interface and diffuse laterally in the hole transport layer 104. x The energy level difference with poly-TPD is the smallest, and the energy levels of the two are almost equal, making it easy for holes to pass through NiO x / poly-TPD interface, migrate to the poly-TPD / QDs interface, and then enter the light-emitting layer to recombine with electrons, thereby improving the photoelectric performance and resolution of UCD2, where / represents and.

[0068] Compared with the traditional infrared beam 1 quality analysis (using scanning slit or camera-type spot analysis method), there are certain limitations in resolution, wavelength range and adaptability. This scheme improves the photoelectric performance and resolution of UCD2, thereby improving the photoelectric performance and resolution of the infrared beam 1 quality analysis device. It can be applied to a larger wavelength range, and the device structure is simple. UCD2 can also be set on a flexible substrate, which has broader application prospects and higher adaptability.

[0069] The above effects are further illustrated by the following comparative experiments in this embodiment:

[0070] Comparative experiment 1: Analyze and compare the photoelectric performance of UCD2 using PVK and poly-TPD as the hole transport layer 104;

[0071] like Figure 4 As shown, under the lighting condition, the turn-on voltage of UCD2 using PVK as the hole transport layer 104 is 1.5V (defined as the brightness of 0.1cd / m 2 The voltage at the time of switching is 4.89×10 4 ;

[0072] like Figure 5 As shown in the figure, under lighting conditions, the UCD2 using poly-TPD as the hole transport layer 104 has a device turn-on voltage as low as 0.97V, which means that it can be driven by using a dry cell, providing convenience for carrying around, and the on / off ratio is as high as 1.1×10 5 , indicating that the analyzer has the potential for application with low energy consumption and high contrast.

[0073] Depend on Figure 4 and Figure 5 , through comparative analysis, it can be determined that UCD2 using poly-TPD as the hole transport layer 104 has achieved more excellent photoelectric performance.

[0074] Comparative experiment 2: Analyze and compare the resolution of UCD2 using PVK and poly-TPD as the hole transport layer 104;

[0075] In order to observe the subtle changes of the infrared beam 1, the resolution of the analyzer is also extremely important, so the imaging resolution of the parallel line array imaging evaluation device is used;

[0076] like Figure 6 As shown, the UCD2 using PVK as the hole transport layer 104 has a grating mask at a line density of 50 lines / mm, and the corresponding up-converted image captured by the analyzer; the locally enlarged image and the 2.5-dimensional image show clear bright and dark stripes, and the calculated image resolution is 1080dpi when the line density is 50 lines / mm; the UCD2 using PVK as the hole transport layer 104 has certain limitations, and the resolution at a line density of 100 lines / mm cannot be measured.

[0077] like Figure 7As shown, a grating mask of UCD2 using poly-TPD as the hole transport layer 104 at a line density of 100 lines / mm and the corresponding up-conversion image captured by the analyzer are shown; the locally enlarged image and the 2.5-dimensional image show clear bright and dark stripes; when the line density is 100 lines / mm, the calculated image resolution is as high as 2540dpi, and the reported resolution does not reach the upper limit of the device, and the higher potential resolution is constrained by the limitations of the measuring equipment; nevertheless, the resolution of 2540dpi is already among the best in instruments based on the infrared up-conversion principle.

[0078] Depend on Figure 6 and Figure 7 By comparison and analysis, it can be determined that the resolution of UCD2 using poly-TPD as the hole transport layer 104 is significantly improved.

[0079] Under the premise that UCD2 using poly-TPD as the hole transport layer 104 achieves excellent performance, in order to demonstrate the function of this solution, CCD3 is used to capture the diffraction image on a small aperture mask. The whole capture process is as follows: Figure 8 As shown. The captured image is Fig. 9 As shown, the diffraction patterns from various geometries are clearly visible; to further analyze the diffraction behavior, 2.5D images and diffraction profiles were captured, as shown in Fig.10 As shown, these images show typical Fresnel diffraction characteristics, with the central peak decreasing symmetrically toward the edge, indicating that the present scheme can effectively analyze subtle changes in the infrared beam 1.

[0080] In summary, the new infrared beam 1 quality analysis device proposed in this scheme has a turn-on voltage as low as 0.97V, a switching ratio as high as 1.1×105, and a resolution as high as 2540dpi when the visible light is green light, which is the easiest for the human eye to recognize. This ensures the application potential of the infrared beam 1 quality analyzer with low energy consumption, high contrast and the ability to analyze subtle changes.

[0081] This embodiment also provides a novel infrared light beam 1 analysis method, which uses the novel infrared light beam 1 analysis device mentioned above.

[0082] This embodiment also provides a method for preparing a novel infrared beam 1 analysis device, including the following contents:

[0083] S1, cleaning the ITO anode substrate 108 with detergent, deionized water, acetone and isopropanol in an ultrasonic bath, and then drying and UV ozone treatment;

[0084] S2, on the treated anode substrate, a hole blocking layer 107, an infrared photosensitive layer 106, an intermediate connecting layer 105, a hole transport layer 104, a visible light emitting layer 103, and an electron transport layer 102 are sequentially prepared by solution spin coating technology, and finally a cathode 101 is prepared by vacuum thermal deposition technology to obtain a device;

[0085] S3, packaging the prepared device to obtain UCD2 for quality analysis of the novel infrared beam 1;

[0086] S4. Connect the packaged UCD2 to CCD3 and the display screen in sequence to obtain a new infrared beam 1 analysis device.

[0087] The above is only an embodiment of the present invention. The common sense such as the known specific structure and characteristics in the scheme is not described in detail here. The ordinary technicians in the relevant field know all the common technical knowledge in the technical field of the invention before the application date or priority date, can obtain all the existing technologies in the field, and have the ability to apply the conventional experimental means before that date. The ordinary technicians in the relevant field can improve and implement this scheme in combination with their own abilities under the enlightenment given by this application. Some typical known structures or known methods should not become obstacles for ordinary technicians in the relevant field to implement this application. It should be pointed out that for those skilled in the art, without departing from the structure of the present invention, several deformations and improvements can be made, which should also be regarded as the protection scope of the present invention, which will not affect the effect of the implementation of the present invention and the practicality of the patent. The protection scope required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to interpret the content of the claims.

Claims

1. A novel infrared beam quality analysis device, characterized in that: include: UCD, CCD and display; UCD, used to receive infrared light beam and convert it into visible light beam; CCD, used to receive the visible light beam emitted by UCD, analyze and process it, and display it on the monitor; The UCD includes a visible light emitting unit, an intermediate connection layer and an infrared detection unit connected in sequence; The visible light emitting unit includes: a hole transport layer, and the material of the hole transport layer is poly-TPD.

2. The novel infrared beam quality analysis device according to claim 1 is characterized in that: The visible light emitting unit arrangement further includes: a cathode, an electron transport layer, and a visible light emitting layer; The cathode, the electron transport layer, the visible light emitting layer and the hole transport layer are arranged in sequence, and the hole transport layer is connected to the intermediate layer.

3. The novel infrared beam quality analysis device according to claim 2 is characterized in that: The material of the electron transport layer includes: any one of ZnO, TiO2, TPBi or a combination of two or more thereof.

4. The novel infrared beam quality analysis device according to claim 2 is characterized in that: The material of the visible light emitting layer includes: CdSe / ZnS green light quantum dots, CdSe / CdS green light quantum dots, or a combination of the two; the thickness of the visible light emitting layer is 30-50 nm.

5. The novel infrared beam quality analysis device according to claim 2 is characterized in that: The material of the intermediate connection layer is NiO x , thickness is 5 to 20 nm.

6. The novel infrared beam quality analysis device according to claim 5 is characterized in that: The infrared detection unit comprises an infrared photosensitive layer, a hole blocking layer, and an anode substrate which are connected in sequence; and the infrared photosensitive layer is connected to the intermediate layer.

7. The novel infrared beam quality analysis device according to claim 6 is characterized in that: The material of the infrared photosensitive layer is an organic material DPP-DTT or HXY-125, which is mixed with Y6 in a preset volume ratio.

8. The novel infrared beam quality analysis device according to claim 6 is characterized in that: The hole blocking layer is made of ZnO and has a thickness of 30-50 nm.

9. The novel infrared beam quality analysis device according to claim 6 is characterized in that: The material of the anode substrate includes, but is not limited to: any one of indium tin oxide, indium zinc oxide, aluminum tin oxide or aluminum zinc oxide, or a combination of two or more thereof.

10. A novel infrared beam quality analysis method, characterized in that: A novel infrared beam quality analysis device using any one of claims 1 to 9.

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