Display device

Abstract

A display device is provided. The display device includes a light emitting region and a non-light emitting region, a substrate, a light emitting element layer disposed on the substrate, a thin film encapsulation layer disposed on the light emitting element layer, a wavelength conversion layer disposed on the thin film encapsulation layer, an opposing substrate facing the substrate, a color filter layer disposed on a surface of the opposing substrate; and a filling layer filled between the color filter layer and the wavelength conversion layer, the filling layer including filling particles.

Description

Technical Field

[0001] The present disclosure relates to a display device. Background Art

[0002] As the information society develops, the demand for display devices for displaying images in various forms has increased. For example, display devices have been applied to various electronic devices such as smart phones, digital cameras, notebook computers, navigation devices, and smart TVs.

[0003] The display device may be a flat panel display device, such as a liquid crystal display device, a field emission display device, or a light-emitting display device. The light-emitting display device may include an organic light-emitting display device including an organic light-emitting element, an inorganic light-emitting display device including an inorganic light-emitting element (such as an inorganic semiconductor), and a micro light-emitting display device including a micro light-emitting element.

[0004] The organic light emitting element may include two opposing electrodes and a light emitting layer disposed therebetween. The light emitting layer receives electrons and holes from the two opposing electrodes and recombines the electrons and holes to generate excitons, and the generated excitons change from an excited state to a ground state, thereby emitting light.

[0005] Since a light source such as a backlight unit is not required, an organic light emitting display device including an organic light emitting element can be configured to have a lightweight and thin shape with low power consumption, and since it has high-quality characteristics such as a wide viewing angle, high brightness and contrast, and a fast response speed, an organic light emitting display device including an organic light emitting element has also attracted attention as a next-generation display device.

[0006] It is to be understood that the background section of the technical section is intended to provide a useful background for understanding the technology. However, the background of the technical section may also include ideas, concepts or cognitions that were not known or clear before the corresponding effective filing date of the subject matter disclosed in this article by a person skilled in the relevant art. Summary of the invention

[0007] Aspects of the present disclosure provide a display device capable of reducing manufacturing costs by simplifying its structure.

[0008] However, the aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure belongs by referring to the detailed description of the present disclosure given below.

[0009] According to one aspect of the present disclosure, a display device may include: a light-emitting area and a non-light-emitting area; a substrate; a light-emitting element layer, which is arranged on the substrate; a thin film encapsulation layer, which is arranged on the light-emitting element layer; a wavelength conversion layer, which is arranged on the thin film encapsulation layer; an opposing substrate, which faces the substrate; a color filter layer, which is arranged on the surface of the opposing substrate; and a filling layer, which is filled between the color filter layer and the wavelength conversion layer, and the filling layer includes filling particles.

[0010] In an embodiment, the light emitting region may include first, second and third light emitting regions, and the wavelength conversion layer may include a first wavelength conversion pattern overlapping the first light emitting region and a second wavelength conversion pattern overlapping the second light emitting region.

[0011] In an embodiment, the wavelength conversion layer may include a capping layer covering the first wavelength conversion pattern, the second wavelength conversion pattern, and the thin film encapsulation layer, and the capping layer is disposed closer to the substrate in the third light emitting region than in the first and second light emitting regions.

[0012] In an embodiment, the filling layer may include a filling resin in which filling particles are dispersed, and a content of the filling particles is in a range of about 1 wt % to about 10 wt %.

[0013] In an embodiment, the filler particles may include light scattering particles.

[0014] In an embodiment, the filler particles may be selected from silicon dioxide (SiO 2 ), aluminum oxide, silicon, titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), at least one of the group consisting of barium sulfate, zinc oxide (ZnO) and polymethyl methacrylate (PMMA).

[0015] In an embodiment, the filling layer may have a thickness in the range of about 0.1 μm to about 10 μm.

[0016] In an implementation, the refractive index of the filling resin of the filling layer may be in the range of about 1.4 to about 1.7.

[0017] In an embodiment, a thickness of the filling layer measured in a vertical direction in one of the plurality of light emitting regions may be different from a thickness of the filling layer measured in the vertical direction in another of the plurality of light emitting regions.

[0018] In an embodiment, a thickness of the filling layer measured in the vertical direction in the third light emitting region may be greater than a thickness of the filling layer measured in the vertical direction in the first light emitting region or the second light emitting region.

[0019] In an embodiment, the display device may further include a spacer disposed between the wavelength conversion layer and the color filter layer.

[0020] In an implementation, the spacer may overlap the non-light emitting region and may not overlap the light emitting region.

[0021] In an implementation, the thickness of the spacer may be in the range of about 0.1 μm to about 4.5 μm.

[0022] In an embodiment, a planar shape of the spacer may be a substantial grid shape or a dot shape.

[0023] According to one aspect of the present disclosure, a display device may include: a light-emitting area and a non-light-emitting area; a substrate; a light-emitting element layer, which is arranged on the substrate; a thin film encapsulation layer, which is arranged on the light-emitting element layer; a wavelength conversion layer, which is arranged on the thin film encapsulation layer; an opposing substrate, which faces the substrate; a color filter layer, which is arranged on the surface of the opposing substrate; and a filling layer, which is filled between the color filter layer and the wavelength conversion layer and includes filling particles, wherein the color filter layer and the wavelength conversion layer are in contact with each other.

[0024] In an implementation, the filling layer may include a first filling pattern, a second filling pattern, and a third filling pattern overlapping the light emitting region and spaced apart from each other.

[0025] In an embodiment, the light emitting region may include first, second and third light emitting regions, and the first filling pattern overlaps the first light emitting region, the second filling pattern overlaps the second light emitting region, and the third filling pattern overlaps the third light emitting region.

[0026] In an implementation, a thickness of the third filling pattern may be greater than a thickness of the first filling pattern or a thickness of the second filling pattern.

[0027] In an embodiment, the filler particles may include light scattering particles and are selected from silicon dioxide (SiO 2 ), aluminum oxide, silicon, titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), at least one of the group consisting of barium sulfate, zinc oxide (ZnO) and polymethyl methacrylate (PMMA).

[0028] In an embodiment, the filling layer may include a filling resin in which filling particles are dispersed, and a refractive index of the filling resin is in a range of about 1.4 to about 1.7.

[0029] In the display device according to the embodiment, by forming a filling layer including filling particles that scatter light between the wavelength conversion layer and the color filter layer, a pattern having a separate light scattering function can be omitted in the third light emitting region. Therefore, the manufacturing cost according to the mask process can be reduced and the process can be simplified.

[0030] Since the filling layer is arranged in the entire display area, a light scattering effect may be applied to the third light emitting area emitting light without light conversion in the wavelength conversion layer, thereby increasing the positive side brightness ratio.

[0031] However, the effects of the embodiments are not limited to the effects set forth herein. The above and other effects of the embodiments will become more apparent to those skilled in the art by referring to the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0033] Figure 1 is a schematic plan view of a display device according to an embodiment;

[0034] Figure 2 is a schematic plan view illustrating lines included in a display device according to an embodiment;

[0035] Figure 3 is a schematic diagram of an equivalent circuit diagram of a sub-pixel according to an embodiment;

[0036] Figure 4 is a schematic cross-sectional view schematically illustrating a display device according to an embodiment;

[0037] Figure 5 is a schematic cross-sectional view schematically illustrating a display device according to an embodiment;

[0038] Figure 6 is a schematic cross-sectional view illustrating a filling layer of a display device according to an embodiment;

[0039] Figures 7 to 9 is a schematic cross-sectional view illustrating a method for manufacturing a display device according to an embodiment for each process;

[0040] Fig.10 is a schematic cross-sectional view illustrating a display device according to an embodiment;

[0041] Fig.11 is a schematic plan view illustrating each light emitting region and non-light emitting region of a display device according to an embodiment;

[0042] Fig.12 is a schematic cross-sectional view illustrating a display device according to an embodiment;

[0043] Fig.13 is a schematic plan view illustrating an example of a spacer of a display device according to an embodiment; and

[0044] Fig.14 is a schematic plan view illustrating another example of the spacer of the display device according to the embodiment. DETAILED DESCRIPTION

[0045] The present disclosure will be described more fully below with reference to the accompanying drawings showing embodiments. However, the present disclosure may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art.

[0046] It will also be understood that when a layer is referred to as being “on” another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Throughout the specification, the same reference numerals refer to the same components.

[0047] In the drawings, for convenience of description and for clarity, the size, thickness, ratio, and dimensions of elements may be exaggerated. Throughout the specification, like reference numerals refer to like elements.

[0048] As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0049] For the purpose of its meaning and interpretation, in the specification and claims, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in the sense of conjunctions or disjunctions and may be understood to be equivalent to "and / or".

[0050] For the purpose of its meaning and interpretation, in the specification and claims, the phrase "at least one of" is intended to include "at least one selected from the group of..." For example, "at least one of A and B" can be understood to mean "A, B, or A and B."

[0051] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For this reason, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0052] The term "overlap" or "overlapped" means that a first object may be above or below or to the side of a second object, and vice versa. Additionally, the term "overlap" may include stacking, stacking, facing or facing, extending over, covering or partially covering, or any other suitable term that will be recognized and understood by a person of ordinary skill in the art.

[0053] The terms "facing" and "facing" mean that the first element can be directly or indirectly opposite to the second element. In the case where the third element is between the first element and the second element, although still facing each other, the first element and the second element can be understood to be indirectly opposite to each other.

[0054] When an element is described as "not overlapping" or "to not overlap" another element, this may include the elements being spaced apart, offset or separated from each other or any other suitable terminology as would be recognized and understood by one of ordinary skill in the art.

[0055] The terms “comprise,” “comprising,” “include,” “including,” “has,” “have,” and / or “having,” and variations thereof, when used in the present specification, specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0056] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the errors associated with the measurements and the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

[0057] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that, unless explicitly defined as such herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and will not be interpreted in an idealized or overly formal sense.

[0058] It will be understood that when an element (or region, layer, portion, etc.) is referred to in the specification as being "on," "connected to" or "coupled to" another element, the element can be directly arranged on, connected to or coupled to the other element described above, or intervening elements may be arranged therebetween.

[0059] It will be understood that the term "connected to" or "coupled to" may include a physical connection or coupling or an electrical connection or coupling.

[0060] The multiple features of various embodiments of the present disclosure may be combined or combined with each other in part or in whole, and various other embodiments are technically possible. Each embodiment may be implemented independently of each other, or may be implemented in association together.

[0061] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0062] Figure 1 is a schematic plan view of a display device according to an embodiment.

[0063] Reference Figure 1 The display device 10 according to the embodiment may be applied to a smart phone, a mobile phone, a tablet personal computer (PC), a personal digital assistant (PDA), a portable multimedia player (PMP), a television, a game console, a wristwatch type electronic device, a head mounted display, a display of a personal computer, a laptop computer, a car navigation system, a vehicle dashboard, a digital camera, a video camera, an external billboard, an electronic sign, a medical device, an inspection device, various household appliances such as a refrigerator and a washing machine, or an Internet of Things (IoT) device. In the specification, a television (TV) will be described as an example of the display device 10, and the TV may have a high resolution or an ultra-high resolution, such as high definition (HD), ultra high definition (UHD), 4K, or 8K.

[0064] The display device 10 according to the embodiment may be classified differently according to the display method. For example, within the spirit and scope of the present disclosure, the classification of the display device 10 may include an organic light emitting display (OLED), an inorganic light emitting display (inorganic EL), a quantum dot light emitting display (QED), a micro LED, a nano LED, a plasma display panel (PDP), a field emission display (FED), a cathode ray tube display (CRT), a liquid crystal display (LCD), an electrophoretic display (EPD), etc. In the following, an organic light emitting display device and an inorganic light emitting display device will be described as examples of the display device 10, and unless a specific distinction is required, the organic light emitting display device applied to the embodiment will be simply referred to as the display device 10. However, the embodiment is not limited to an organic light emitting display device or an inorganic light emitting display device, and within the scope of the shared technical idea, other display devices listed above or known in the art may also be applied.

[0065] The display device 10 according to the embodiment may have a quadrilateral shape, for example, a rectangular shape in a plan view. In the case where the display device 10 is a television, the display device 10 is arranged so that its long side is positioned in the horizontal direction. However, the present disclosure is not limited thereto, and the long side of the display device 10 may be positioned in the vertical direction, and the display device 10 may be rotatably mounted so that the long side of the display device 10 may also be variably positioned in the horizontal direction or the vertical direction.

[0066] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an active area in which an image is displayed. Similar to the overall shape of the display device 10, the display area DPA may have a rectangular shape in a plan view, but is not limited thereto.

[0067] The display area DPA may include a plurality of pixels PX. The plurality of pixels PX may be arranged or disposed in a matrix direction. The shape of each pixel PX may be a rectangular shape or a square shape in a plan view, but is not limited thereto, and may also be a diamond shape in which each side of the pixel PX is inclined relative to an edge or the direction of the edge of the display device 10. The plurality of pixels PX may include a plurality of colored pixels PX. For example, the plurality of pixels PX may include a first colored pixel PX of red, a second colored pixel PX of green, and a third colored pixel PX of blue, but is not limited thereto. The plurality of colored pixels PX may be alternately arranged or disposed in a stripe type or type.

[0068] The non-display area NDA may be arranged around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have a rectangular shape, and the non-display area NDA may be arranged adjacent to four sides of the display area DPA. The non-display area NDA may constitute a frame of the display device 10.

[0069] A driving circuit or a driving element for driving the display area DPA may be arranged in the non-display area NDA. In an embodiment, the pad portion may be arranged to be parallel to the first long side ( Figure 1 The first non-display area NDA1 adjacent to the lower side of the display device 10 and the second long side ( Figure 1 The display substrate of the display device 10 is provided in a second non-display area NDA2 adjacent to the upper side of the display substrate (in the middle), and the external device EXD may be mounted on the pad electrode of the pad portion. Within the spirit and scope of the present disclosure, examples of the external device EXD may include a connection film, a printed circuit board, a driver chip DIC, a connector, a wire connection film, etc. The scan driver SDR or the like directly formed on the display substrate of the display device 10 may be arranged in a region arranged to be adjacent to the first short side ( Figure 1 However, the present disclosure is not limited thereto, and the scan driver SDR may also be arranged on the second short side ( Figure 1 on the right side of the ). Figure 1 A fourth non-display area NDA4 may also be included.

[0070] Figure 2 is a schematic plan view illustrating lines included in a display device according to an embodiment.

[0071] Reference Figure 2 , the display device 10 may include a plurality of lines. The plurality of lines may include a scan line SCL, a sensing line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. Although not shown in the drawings, other lines may also be arranged in the display device 10.

[0072] The scan lines SCL and the sensing lines SSL may extend in the first direction DR1. The scan lines SCL and the sensing lines SSL may be connected to a scan driver SDR. The scan driver SDR may include a driving circuit. The scan driver SDR may be arranged on one side or on the side of the display area DPA in the first direction DR1, but is not limited thereto. The scan driver SDR may be connected to a signal connection line CWL, and at least one end of the signal connection line CWL may be connected to an external device EXD by forming a pad WPD_CW on the pad area PDA of the non-display area NDA.

[0073] In the specification, the meaning of "connection" may mean that any one component is connected to another component by mutual physical contact, and any one component is connected to another component through other components. It is understood that any one part and another part as an integrated component are interconnected due to the integrated component. In addition, the connection between any one component and another component may be interpreted as including the meaning of electrical connection through other components in addition to connection through direct contact therebetween.

[0074] The data line DTL and the initialization voltage line VIL may extend in a second direction DR2 intersecting the first direction DR1. The initialization voltage line VIL may also include a portion extending in the second direction DR2 and a portion branching from it in the first direction DR1. The first voltage line VDL and the second voltage line VSL may also include a portion extending in the second direction DR2 and a portion connected thereto and extending in the first direction DR1. The first voltage line VDL and the second voltage line VSL may have a grid structure, but are not limited thereto. Although not illustrated in the drawings, each of the plurality of pixels PX of the display device 10 may be connected to one or more data lines DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL.

[0075] The data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL may be electrically connected to at least one wire pad WPD. Each wire pad WPD may be arranged in a pad area PDA. In an embodiment, a wire pad WPD_DT (hereinafter referred to as a "data pad") of the data line DTL may be arranged in the pad area PDA on one side or side of the display area DPA in the second direction DR2, and a wire pad WPD_Vint (hereinafter referred to as an "initialization voltage pad") of the initialization voltage line VIL, a wire pad WPD_VDD (hereinafter referred to as a "first power pad") of the first voltage line VDL, and a wire pad WPD_VSS (hereinafter referred to as a "second power pad") of the second voltage line VSL may be arranged in the pad area PDA positioned on the other side of the display area DPA in the second direction DR2. As another example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS may all be arranged in the same area, for example, in the non-display area NDA positioned on the upper side of the display area DPA. The external device EXD may be mounted on the wire pad WPD. Within the spirit and scope of the present disclosure, the external device EXD may be mounted on the wire pad WPD by an anisotropic conductive film, ultrasonic bonding, or the like.

[0076] Each pixel PX or sub-pixel SPX (see Figure 3) may include a pixel driving circuit. The above-mentioned line may apply a driving signal to each pixel driving circuit while passing through each pixel PX or bypassing each pixel PX. The pixel driving circuit may include a transistor and a capacitor. The number of transistors and capacitors in each pixel driving circuit may be variously changed. According to an embodiment, each sub-pixel SPX of the display device 10 may have a 3T1C structure in which the pixel driving circuit may include three transistors and one capacitor. Hereinafter, the pixel driving circuit will be described using the 3T1C structure as an example, but the present disclosure is not limited thereto, and various other modified pixel PX structures such as a 2T1C structure, a 7T1C structure, and a 6T1C structure may also be applied.

[0077] Figure 3 is a schematic diagram of an equivalent circuit diagram of one sub-pixel according to an embodiment.

[0078] Reference Figure 3 Each sub-pixel SPX of the display device 10 according to the embodiment may further include a driving transistor DTR, first and second transistors STR1 and STR2 , and one storage capacitor CST, in addition to the light emitting element ED.

[0079] The light emitting element ED emits light according to the current supplied through the driving transistor DTR. Within the spirit and scope of the present disclosure, the light emitting element ED may be implemented as an inorganic light emitting diode, an organic light emitting diode, a micro light emitting diode, a nano light emitting diode, etc.

[0080] A first electrode (e.g., an anode electrode) of the light-emitting element ED may be connected to a source electrode of the driving transistor DTR, and a second electrode (e.g., a cathode electrode) of the light-emitting element ED may be connected to a second power line ELVSL, which is supplied with a low potential voltage (second power voltage) lower than a high potential voltage (first power voltage) of the first power line ELVDL.

[0081] The driving transistor DTR adjusts the current flowing from the first power line ELVDL to which the first power is supplied to the light emitting element ED according to the voltage difference between its gate electrode and source electrode. The gate electrode of the driving transistor DTR may be connected to the first electrode of the first transistor STR1, the source electrode of the driving transistor DTR may be connected to the first electrode of the light emitting element ED, and the drain electrode of the driving transistor DTR may be connected to the first power line ELVDL to which the first power voltage is applied.

[0082] The first transistor STR1 is turned on by a scan signal of the scan line SCL and connects the data line DTL to the gate electrode of the driving transistor DTR. The gate electrode of the first transistor STR1 may be connected to the scan line SCL, the first electrode of the first transistor STR1 may be connected to the gate electrode of the driving transistor DTR, and the second electrode of the first transistor STR1 may be connected to the data line DTL.

[0083] The second transistor STR2 is turned on by the sensing signal of the sensing line SSL and connects the initialization voltage line VIL to the source electrode of the driving transistor DTR. The gate electrode of the second transistor STR2 may be connected to the sensing line SSL, the first electrode of the second transistor STR2 may be connected to the initialization voltage line VIL, and the second electrode of the second transistor STR2 may be connected to the source electrode of the driving transistor DTR.

[0084] In an embodiment, a first electrode of each of the first transistor STR1 and the second transistor STR2 may be a source electrode, and a second electrode of each of the first transistor STR1 and the second transistor STR2 may be a drain electrode, but the present disclosure is not limited thereto, and vice versa.

[0085] A storage capacitor CST is formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST stores a difference voltage between the gate voltage and the source voltage of the driving transistor DTR.

[0086] The driving transistor DTR and the first and second transistors STR1 and STR2 may be formed as thin film transistors. Figure 3 , the driving transistor DTR and the first transistor STR1 and the second transistor STR2 are described as N-type metal oxide semiconductor field effect transistors (MOSFETs), but the present disclosure is not limited thereto. For example, the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be P-type MOSFETs, or some of the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be N-type MOSFETs and the other of the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be P-type MOSFETs.

[0087] Figure 4 is a schematic cross-sectional view schematically illustrating a display device according to an embodiment.

[0088] Reference Figure 4 , the display device 10 according to the embodiment may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer FIL, a color filter layer CFL, and a counter substrate TSUB.

[0089] The substrate SUB may be an insulating substrate. The substrate SUB may include a transparent material. For example, the substrate SUB may include a transparent insulating material such as glass or quartz. The substrate SUB may be a rigid substrate. The substrate SUB is not limited thereto and may also include a plastic such as polyimide and may also have a flexible property that can be bent, curved, folded, or curled.

[0090] The light emitting element layer EML may be disposed on the substrate SUB. The light emitting element layer EML may include a plurality of switching elements and a plurality of light emitting elements ED disposed in each sub-pixel SPX. The plurality of switching elements may drive the plurality of light emitting elements ED to emit light from the plurality of light emitting elements ED.

[0091] The thin film encapsulation layer TFEL may be disposed on the light emitting element layer EML. The thin film encapsulation layer TFEL may include an organic film disposed between a plurality of inorganic films, thereby protecting the light emitting element layer EML from external moisture and oxygen.

[0092] The wavelength conversion layer WCL may be disposed on the thin film encapsulation layer TFEL. The wavelength conversion layer WCL may convert the wavelength of light emitted from the light emitting element layer EML to emit red light, green light, and blue light.

[0093] The filling layer FIL may be arranged on the wavelength conversion layer WCL. The filling layer FIL may improve light efficiency by totally reflecting light emitted from the wavelength conversion layer WCL at an interface with the wavelength conversion layer WCL. According to an embodiment described later, the filling layer FIL may include a low refractive index material, etc. The filling layer FIL may also include a first filling pattern FIP1, a second filling pattern FIP2, and a third filling pattern FIP3 (see Fig.10 ).

[0094] The color filter layer CFL may be disposed on the filling layer FIL. The color filter layer CFL may filter light incident from the outside to reduce reflection of the external light and improve color characteristics of light emitted through the wavelength conversion layer WCL.

[0095] The counter substrate TSUB may be disposed on the color filter layer CFL. The counter substrate TSUB may encapsulate the light emitting element layer EML together with the substrate SUB. The counter substrate TSUB may include a transparent material. For example, the counter substrate TSUB may include a transparent insulating material such as glass or quartz.

[0096] Figure 5 is a schematic cross-sectional view schematically illustrating a display device according to an embodiment. Figure 6 is a schematic cross-sectional view illustrating a filling layer of a display device according to an embodiment.

[0097] Reference Figure 5 and Figure 6, the display device 10 according to the embodiment may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer FIL, a color filter layer CFL, and a counter substrate TSUB.

[0098] The substrate SUB may define a first light emitting area LA1, a second light emitting area LA2, and a third light emitting area LA3 and a non-light emitting area NLA. The first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may be an area in which light generated by the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 is emitted to the outside, and the non-light emitting area NLA may be an area in which light is not emitted to the outside. In an embodiment, the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may be sequentially arranged along the first direction DR1 in the display area DPA.

[0099] The first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may have the same width measured in the first direction DR1. However, the present disclosure is not limited thereto, and the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may have different widths measured in the first direction DR1. For example, the width of the third light emitting area LA3 may be smaller than the width of the second light emitting area LA2, and the width of the second light emitting area LA2 may be smaller than the width of the first light emitting area LA1.

[0100] The first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may emit light of different colors. In an embodiment, the first light emitting area LA1 may emit light of a first color, the second light emitting area LA2 may emit light of a second color, and the third light emitting area LA3 may emit light of a third color. In an embodiment, the light of the first color may be red light having a peak wavelength in the range of about 610nm to about 650nm, the light of the second color may be green light having a peak wavelength in the range of about 510nm to about 550nm, and the light of the third color may be blue light having a peak wavelength in the range of about 440nm to about 480nm. However, the present disclosure is not limited thereto, and the light of the first color may also be green light, and the light of the second color may also be red light.

[0101] A first switching element T1, a second switching element T2, and a third switching element T3 may be arranged on the substrate SUB. In an embodiment, the first switching element T1 may be positioned in a first light emitting area LA1 of the substrate SUB, the second switching element T2 may be positioned in a second light emitting area LA2 of the substrate SUB, and the third switching element T3 may be positioned in a third light emitting area LA3 of the substrate SUB. However, the present disclosure is not limited thereto. In an embodiment, at least one of the first switching element T1, the second switching element T2, and the third switching element T3 may also be positioned in a non-light emitting area NLA.

[0102] According to an embodiment, each of the first switching element T1, the second switching element T2, and the third switching element T3 may be a thin film transistor including amorphous silicon, polycrystalline silicon, or an oxide semiconductor. Although not illustrated in the drawings, a plurality of signal lines (e.g., gate lines, data lines, power lines, etc.) for transmitting signals to each switching element may also be arranged on the substrate SUB. Each of the first switching element T1, the second switching element T2, and the third switching element T3 may include a first insulating layer 120. For example, the first insulating layer 120 may be a gate insulating film or an interlayer insulating film of the thin film transistor. The gate insulating film or the interlayer insulating film may be made of a silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and silicon nitride (SiN x ) is made of a single layer or multiple layers of any one of ).

[0103] A second insulating layer 130 may be positioned on the first switching element T1, the second switching element T2, and the third switching element T3. In an embodiment, the second insulating layer 130 may be a planarization film. In an embodiment, the second insulating layer 130 may be made of an organic film. For example, within the spirit and scope of the present disclosure, the second insulating layer 130 may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, etc. In an embodiment, the second insulating layer 130 may include a positive photosensitive material or a negative photosensitive material.

[0104] The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be positioned on the second insulating layer 130. The first pixel electrode PE1 may be positioned in the first light emitting area LA1, but at least a portion thereof may extend to the non-light emitting area NLA. The second pixel electrode PE2 may be positioned in the second light emitting area LA2, but at least a portion thereof may extend to the non-light emitting area NLA. The third pixel electrode PE3 may be positioned in the third light emitting area LA3, but at least a portion thereof may extend to the non-light emitting area NLA. The first pixel electrode PE1 may penetrate the second insulating layer 130 and be connected to the first switching element T1, the second pixel electrode PE2 may penetrate the second insulating layer 130 and be connected to the second switching element T2, and the third pixel electrode PE3 may penetrate the second insulating layer 130 and be connected to the third switching element T3.

[0105] In an embodiment, the widths or areas of the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be the same as each other. However, the present disclosure is not limited thereto, and the widths or areas of the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be different from each other. For example, the width of the third pixel electrode PE3 may be smaller than the width of the second pixel electrode PE2, and the width of the second pixel electrode PE2 may be smaller than the width of the first pixel electrode PE1 and larger than the width of the third pixel electrode PE3. By way of example, the area of ​​the third pixel electrode PE3 may be smaller than the area of ​​the second pixel electrode PE2, and the area of ​​the second pixel electrode PE2 may be smaller than the area of ​​the first pixel electrode PE1 and larger than the area of ​​the third pixel electrode PE3.

[0106] The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may be reflective electrodes. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may have a structure in which a layer of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In 2 O 3 ) and a stacked film structure of a reflective material layer made of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a mixture thereof. The material layer with a high work function may be arranged on a layer above the reflective material layer to be arranged close to the light emitting layer OL. The first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3 may have ITO / Mg, ITO / MgF 2 , ITO / Ag and ITO / Ag / ITO multilayer structures, but not limited thereto.

[0107] A pixel defining film 150 may be positioned on the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3. The pixel defining film 150 may include an opening exposing the first pixel electrode PE1, an opening exposing the second pixel electrode PE2, and an opening exposing the third pixel electrode PE3, and may define a first light emitting area LA1, a second light emitting area LA2, a third light emitting area LA3, and a non-light emitting area NLA. For example, an area of ​​the first pixel electrode PE1 that is not covered by the pixel defining film 150 and is exposed may be the first light emitting area LA1. An area of ​​the second pixel electrode PE2 that is not covered by the pixel defining film 150 and is exposed may be the second light emitting area LA2. An area of ​​the third pixel electrode PE3 that is not covered by the pixel defining film 150 and is exposed may be the third light emitting area LA3. Other areas where the pixel defining film 150 is positioned may be the non-light emitting area NLA.

[0108] The pixel defining film 150 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0109] In an embodiment, the pixel defining film 150 may overlap with the dam 180 of the wavelength conversion layer WCL, which will be described later. A light emitting layer OL may be arranged on the first pixel electrode PE1, the second pixel electrode PE2, and the third pixel electrode PE3. In an embodiment in which the display device 10 is an organic light emitting display device, the light emitting layer OL may include an organic layer including an organic material. The organic layer may include an organic light emitting layer, and in some cases may also include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer for assisting the emission of light.

[0110] In an embodiment, the light emitting layer OL may have a series structure including a plurality of organic light emitting layers arranged to overlap each other in a thickness direction and a charge generating layer arranged between the plurality of organic light emitting layers. Each of the plurality of organic light emitting layers arranged to overlap each other may emit light of the same wavelength, but may also emit light of different wavelengths. For example, each of the plurality of organic light emitting layers arranged to overlap each other may include an organic light emitting layer emitting light in a green wavelength and an organic light emitting layer emitting light in a blue wavelength. In an embodiment, each of the plurality of organic light emitting layers arranged to overlap each other may also include an organic light emitting layer emitting light in a red wavelength, an organic light emitting layer emitting light in a green wavelength, and an organic light emitting layer emitting light in a blue wavelength.

[0111] In an embodiment, the light emitting layer OL may have a shape of a continuous film formed across the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 and the non-light emitting area NLA. In this case, the wavelengths of light emitted by the light emitting layer OL may be the same. For example, the light emitting layer OL may emit blue light, white wavelength light, or ultraviolet light from the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3.

[0112] A common electrode CE may be positioned on the light emitting layer OL. The common electrode CE may be a cathode electrode of each of the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3. In an embodiment, the common electrode CE may be semi-transmissive or transmissive. In the case where the common electrode CE is semi-transmissive, the common electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or a compound or mixture thereof, for example, a mixture of Ag and Mg, or a material having a multilayer structure, such as LiF / Ca or LiF / Al. In addition, in the case where the common electrode CE has a thickness of tens to hundreds of angstroms, the common electrode CE may be semi-transmissive.

[0113] In the case where the common electrode CE is transmissive, the common electrode CE may include a transparent conductive oxide (TCO). For example, within the spirit and scope of the present disclosure, the common electrode CE may include tungsten oxide (W x O y ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), etc.

[0114] The first pixel electrode PE1, the light emitting layer OL and the common electrode CE may constitute a first light emitting element ED1, the second pixel electrode PE2, the light emitting layer OL and the common electrode CE may constitute a second light emitting element ED2, and the third pixel electrode PE3, the light emitting layer OL and the common electrode CE may constitute a third light emitting element ED3. Each of the first light emitting element ED1, the second light emitting element ED2 and the third light emitting element ED3 may emit source light, and the source light may be provided to the wavelength conversion layer WCL. The source light may be, for example, blue light, but is not limited thereto, and may be white light or ultraviolet light. The first light emitting element ED1, the second light emitting element ED2 and the third light emitting element ED3 may be organic light emitting diodes.

[0115] A thin film encapsulation layer TFEL may be positioned on the common electrode CE. The thin film encapsulation layer TFEL may be commonly arranged in the first light emitting area LA1, the second light emitting area LA2, the third light emitting area LA3 and the non-light emitting area NLA. In an embodiment, the thin film encapsulation layer TFEL may directly cover the common electrode CE.

[0116] In an implementation, the thin film encapsulation layer TFEL may include a first encapsulation inorganic film 171 , an encapsulation organic film 173 , and a second encapsulation inorganic film 175 sequentially stacked on the common electrode CE.

[0117] Each of the first encapsulation inorganic film 171 and the second encapsulation inorganic film 175 may include one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. Within the spirit and scope of the present disclosure, the encapsulation organic film 173 may include acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc.

[0118] However, the structure of the thin film encapsulation layer TFEL is not limited to the above example, and the stacking structure of the thin film encapsulation layer TFEL may be variously changed.

[0119] The wavelength conversion layer WCL may be disposed on the thin film encapsulation layer TFEL.

[0120] The wavelength conversion layer WCL may include a dam 180 , a first wavelength conversion pattern 230 , a second wavelength conversion pattern 240 , and a capping layer 300 .

[0121] The dam 180 may be disposed on the thin film encapsulation layer TFEL. The dam 180 may separate the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 from the non-light emitting area NLA. The dam 180 may be arranged to overlap the non-light emitting area NLA and may block the transmission of light. For example, the dam 180 may be positioned between the first wavelength conversion pattern 230 and the second wavelength conversion pattern 240 and prevent color mixing between light emitting areas adjacent to each other.

[0122] The dam 180 may include an organic light-blocking material and may be formed by a coating and exposure process of the organic light-blocking material or an inkjet method. For example, the dam 180 may include an organic material and a dye or pigment having a light-blocking property mixed with the organic material. Within the spirit and scope of the present disclosure, the organic material may include acrylic resin, methacrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, etc. The dye or pigment may include carbon black, etc.

[0123] The first wavelength conversion pattern 230 and the second wavelength conversion pattern 240 may be disposed on the thin film encapsulation layer TFEL.

[0124] The first wavelength conversion pattern 230 may be positioned on the thin film encapsulation layer TFEL and may overlap the first light emitting area LA1. The first wavelength conversion pattern 230 may convert or shift the peak wavelength of the incident light into light having another specific peak wavelength and emit the converted or shifted light. In an embodiment, the first wavelength conversion pattern 230 may convert the source light provided from the first light emitting element ED1 into red light having a peak wavelength in the range of about 610 nm to about 650 nm and emit the converted red light.

[0125] The first wavelength conversion pattern 230 may include a first base resin 231 and a first wavelength shifter 235 dispersed in the first base resin 231 , and may further include a first scatterer 233 dispersed in the first base resin 231 .

[0126] The first base resin 231 may be made of a material having high light transmittance. In an embodiment, the first base resin 231 may be made of an organic material. For example, the first base resin 231 may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0127] The first scatterer 233 may have a refractive index different from that of the first base resin 231 and may form an optical interface with the first base resin 231. For example, the first scatterer 233 may be a light scattering particle. The first scatterer 233 is not particularly limited as long as it is a material capable of scattering at least a portion of the transmitted light, but may be, for example, metal oxide particles or organic particles. Within the spirit and scope of the present disclosure, examples of metal oxides may include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 )、ZnO、SnO 2 ), etc., and examples of the material of the organic particles may include acrylic resin, urethane resin, etc. The first scatterer 233 may scatter light in random directions regardless of the incident direction of the incident light without substantially converting the wavelength of light transmitted through the first wavelength conversion pattern 230.

[0128] The first wavelength shifter 235 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the first wavelength shifter 235 may convert the source light (e.g., blue light) provided from the first light emitting element ED1 into red light having a single peak wavelength in the range of about 610 nm to about 650 nm and emit the red light.

[0129] Examples of the first wavelength shifter 235 may include, for example, quantum dots, quantum bars, or phosphors. For example, quantum dots may be a particle material that emits a specific color as electrons transition from a conduction band to a valence band.

[0130] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps to absorb light and emit light with unique wavelengths depending on their composition and size. Examples of semiconductor nanocrystals of quantum dots can include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI nanocrystals, or combinations thereof.

[0131] The II-VI compound may be selected from a binary compound selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof, a binary compound selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, A ternary compound selected from the group consisting of CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and a mixture thereof, and a quaternary compound selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and a mixture thereof.

[0132] The III-V compounds may be selected from a group consisting of binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof, a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof, and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0133] The IV-VI group compound may be selected from a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof, a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof, and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0134] In this case, the binary compound, ternary compound or quaternary compound may be present in the particle at a uniform concentration, or may be present in the same particle in a state of partially different concentration distribution. The quantum dot may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0135] According to an embodiment, the quantum dot may have a core-shell structure including a core containing the above-mentioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for maintaining semiconductor properties by preventing chemical modification of the core and / or a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0136] For example, examples of metal or non-metal oxides may include SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or binary compounds such as NiO or MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 or CoMn 2 O 4 The present disclosure may include, but is not limited to, a ternary compound.

[0137] Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present disclosure is not limited thereto.

[0138] The light emitted by the first wavelength shifter 235 may have an emission wavelength spectrum full width at half maximum (FWHM) of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and in this way, the color purity and color reproducibility of the color displayed by the display device 10 may be further improved. The light emitted by the first wavelength shifter 235 may be emitted toward multiple directions regardless of the incident direction of the incident light. In this way, the side visibility of the first color displayed in the first light emitting area LA1 may be improved.

[0139] A portion of the source light provided from the first light emitting element ED1 may not be converted into red light by the first wavelength shifter 235. However, light among the source light that is not converted into red light may be blocked by the color filter layer CFL disposed on the upper portion. On the other hand, red light among the source light converted by the first wavelength conversion pattern 230 is transmitted through the color filter layer CFL and emitted to the outside.

[0140] The second wavelength conversion pattern 240 may be positioned on the thin film encapsulation layer TFEL and may overlap the second light emitting area LA2. The second wavelength conversion pattern 240 may convert or shift the peak wavelength of the incident light into light having another specific peak wavelength and emit the converted or shifted light. In an embodiment, the second wavelength conversion pattern 240 may convert the source light provided from the second light emitting element ED2 into green light in the range of about 510 nm to about 550 nm and emit the converted green light.

[0141] The second wavelength conversion pattern 240 may include a second base resin 241 and a second wavelength shifter 245 dispersed in the second base resin 241 , and may further include a second scatterer 243 dispersed in the second base resin 241 .

[0142] The second base resin 241 may be made of a material having high light transmittance. In an embodiment, the second base resin 241 may be made of an organic material. The second base resin 241 may be made of the same material as the first base resin 231, or may include at least one of the materials described as constituent materials of the first base resin 231.

[0143] The second wavelength shifter 245 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the second wavelength shifter 245 may convert source light (e.g., blue light) having a peak wavelength in the range of about 440 nm to about 480 nm into green light having a peak wavelength in the range of about 510 nm to about 550 nm.

[0144] The second wavelength shifter 245 may be, for example, a quantum dot, a quantum bar, or a phosphor. A more detailed description of the second wavelength shifter 245 is substantially the same or similar to the description of the first wavelength shifter 235 described above, and thus will be omitted. In an embodiment, both the first wavelength shifter 235 and the second wavelength shifter 245 may be formed of quantum dots. In this case, the particle size of the quantum dots constituting the first wavelength shifter 235 may be larger than the particle size of the quantum dots constituting the second wavelength shifter 245.

[0145] The second scatterer 243 may have a refractive index different from that of the second base resin 241, and may form an optical interface with the second base resin 241. For example, the second scatterer 243 may be light scattering particles. Other detailed descriptions of the second scatterer 243 are substantially the same or similar to those of the first scatterer 233, and thus will be omitted.

[0146] Source light emitted from the second light emitting element ED2 may be provided to the second wavelength conversion pattern 240 , and the second wavelength shifter 245 may convert the source light provided from the second light emitting element ED2 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0147] A portion of the source light may be transmitted through the second wavelength conversion pattern 240 without being converted into green light by the second wavelength shifter 245. However, the light not converted into green light may be blocked by the color filter layer CFL. On the other hand, the green light converted by the second wavelength conversion pattern 240 among the source light may be transmitted through the color filter layer CFL and emitted to the outside.

[0148] The capping layer 300 may be disposed on the dam 180, the first wavelength conversion pattern 230, and the second wavelength conversion pattern 240 to cover the dam 180, the first wavelength conversion pattern 230, and the second wavelength conversion pattern 240. Therefore, the capping layer 300 may prevent impurities such as moisture or air from penetrating from the outside and damaging or contaminating the dam 180, the first wavelength conversion pattern 230, and the second wavelength conversion pattern 240.

[0149] The capping layer 300 may be made of an inorganic material, for example, silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, and silicon oxynitride.

[0150] In an embodiment, the capping layer 300 may be arranged adjacent to the substrate SUB in an area overlapping the third light emitting area LA3. For example, the capping layer 300 may be arranged closer to the substrate SUB in the third light emitting area LA3 than in the first light emitting area LA1 and the second light emitting area LA2. In an embodiment, the distance from the substrate SUB to the capping layer 300 may be shorter in the third light emitting area LA3 than in the first light emitting area LA1 and the second light emitting area LA2.

[0151] The filling layer FIL may be disposed on the capping layer 300. The filling layer FIL may be disposed directly on the capping layer 300 and may be disposed between the wavelength conversion layer WCL and the color filter layer CFL. The filling layer FIL may contact the wavelength conversion layer WCL and the color filter layer CFL, respectively. The filling layer FIL may completely cover the upper portion of the wavelength conversion layer WCL. The filling layer FIL may be completely disposed in the display area ( Figure 1 For example, the filling layer FIL may be arranged on the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 and the non-light emitting area NLA in the display area. The filling layer FIL may extend and be arranged in the non-display area ( Figure 1 in the “Non-display area NDA”).

[0152] In the third light emitting area LA3, the source light emitted from the third light emitting element ED3 is transmitted to the color filter layer CFL without light conversion. However, for characteristics such as the positive side brightness ratio, a pattern including scattering particles that can scatter light is required. However, the patterning process for forming the pattern involves a mask process and inevitably causes significant material loss. Therefore, in an embodiment, in the area corresponding to the third light emitting area LA3, the additional patterning process may be omitted, and instead, a filling layer FIL including filling particles FP that scatter light may be formed in the entire display area DPA.

[0153] The filling layer FIL may include a filling resin FR and filling particles FP dispersed in the filling resin FR. The filling resin FR may be made of a material having high light transmittance. For example, the filling resin FR may include silicone resin, acrylic resin, epoxy resin, polyacrylate, polyurethane, polyethylene or ester resin.

[0154] The filling particles FP may be light scattering particles that scatter light. The filling particles FP may include, for example, a material selected from silicon dioxide (SiO 2 ), aluminum oxide, silicon, titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), barium sulfate, zinc oxide (ZnO) and polymethyl methacrylate (PMMA) One or more of the group consisting of. In an embodiment, the filler particles FP may be titanium oxide.

[0155] The filling layer FIL may be formed by applying a composition obtained by mixing filling particles FP, a dispersant, a thermal initiator, and a photoinitiator with a solvent onto the filling resin FR. The content of the filling particles FP may be in the range of about 1 wt % to about 10 wt % relative to the total composition. If the content of the filling particles FP is about 1 wt % or more relative to the total composition, the positive side brightness ratio may be increased by scattering the light transmitted through the wavelength conversion layer WCL. If the content of the filling particles FP is about 10 wt % or less relative to the total composition, the coating properties of the composition may be promoted, and the light efficiency may be prevented from being reduced.

[0156] The thickness of the filling layer FIL may be in the range of about 0.1 μm to about 10 μm. If the thickness of the filling layer FIL is about 0.1 μm or more, the flatness of the filling layer FIL may be ensured, and a gap may be easily formed with the color filter layer CFL. If the thickness of the filling layer FIL is about 10 μm or less, defects caused by moisture or oxygen penetrating through the filling layer FIL from the outside may be prevented from occurring.

[0157] The refractive index of the filling resin FR of the filling layer FIL may be in the range of about 1.4 to about 1.7. If the refractive index of the filling resin FR of the filling layer FIL is 1.4 or more, the difference in refractive index between adjacent layers may increase, thereby preventing a decrease in light efficiency. If the refractive index of the filling resin FR of the filling layer FIL is about 1.7 or less, the viscosity of the composition of the filling layer FIL may increase, thereby preventing a decrease in applicability.

[0158] According to an embodiment, the thickness of the filling layer FIL may be different for each area. The thickness TT1 of the filling layer FIL in the third light-emitting area LA3 may be greater than the thickness TT2 of the filling layer FIL in the first light-emitting area LA1 or the second light-emitting area LA2. Here, the thickness of the filling layer FIL may be the distance between the capping layer 300 and the color filter layer CFL in the corresponding area. If the thickness TT1 of the filling layer FIL in the third light-emitting area LA3 is greater than the thickness TT2 in the first light-emitting area LA1 and the second light-emitting area LA2, the positive side brightness ratio can be increased by scattering the light emitted from the third light-emitting area LA3. In the first light-emitting area LA1 and the second light-emitting area LA2, since sufficient light scattering occurs from the scatterers of the first wavelength conversion pattern 230 and the second wavelength conversion pattern 240, it is preferred from the efficiency point of view that the thickness of the filling layer FIL is small.

[0159] As described above, by forming a filling layer FIL including filling particles FP that scatter light between the wavelength conversion layer WCL and the color filter layer CFL, a pattern having a separate light scattering function can be omitted in the third light emitting area LA3. Therefore, the manufacturing cost according to the mask process can be reduced and the process can be simplified. Since the filling layer FIL is arranged in the entire display area DPA, the light scattering effect can be applied to the third light emitting area LA3 that emits light without light conversion in the wavelength conversion layer WCL, thereby increasing the positive side brightness ratio.

[0160] The color filter layer CFL may be disposed on the wavelength conversion layer WCL, and the counter substrate TSUB may be disposed on the color filter layer CFL.

[0161] The color filter layer CFL may include a first color filter 360 , a second color filter 370 , and a third color filter 380 . The color filter layer CFL may include a first color pattern 365 , a second color pattern 375 , and a third color pattern 385 .

[0162] The first color filter 360 may be disposed between the counter substrate TSUB and the filling layer FIL and may be disposed to overlap the third light emitting area LA3. The first color filter 360 may be in direct contact with the filling layer FIL. The first color pattern 365 may be disposed to be spaced apart from the first color filter 360 and overlap the non-light emitting area NLA.

[0163] The first color filter 360 and the first color pattern 365 may selectively transmit light of a third color (e.g., blue light) and block or absorb light of a first color (e.g., red light) and light of a second color (e.g., green light). In an embodiment, the first color filter 360 may be a blue color filter and may include a blue colorant such as a blue dye or a blue pigment. In this article, the colorant is a concept including both a dye and a pigment.

[0164] The second color filter 370 may be arranged between the counter substrate TSUB and the filling layer FIL, and may be arranged to overlap the first light emitting area LA1. The second color filter 370 may overlap the first light emitting element ED1 and the first wavelength conversion pattern 230. In an embodiment, one side or side of the second color filter 370 may overlap the non-light emitting area NLA and may overlap the first color filter 360 adjacent thereto. The other side of the second color filter 370 may overlap the non-light emitting area NLA and may overlap the first color pattern 365. The second color pattern 375 may be arranged to be spaced apart from the second color filter 370 and overlap the non-light emitting area NLA. The second color pattern 375 may be arranged to overlap the first color filter 360 in the non-light emitting area NLA. The second color filter 370 may be in direct contact with the filling layer FIL.

[0165] The second color filter 370 and the second color pattern 375 may selectively transmit light of a first color (e.g., red light) and block or absorb light of a second color (e.g., green light) and light of a third color (e.g., blue light). For example, the second color filter 370 may be a red color filter and may include a red colorant such as a red dye or a red pigment.

[0166] The third color filter 380 may be arranged between the counter substrate TSUB and the filling layer FIL, and may overlap with the second light emitting area LA2. The third color filter 380 may overlap with the second light emitting element ED2 and the second wavelength conversion pattern 240. In an embodiment, one side or side of the third color filter 380 may overlap with the non-light emitting area NLA, and may overlap with the first color filter 360 and the first color pattern 365 adjacent thereto. The other side of the third color filter 380 may overlap with the non-light emitting area NLA, and may overlap with the first color filter 360 and the second color pattern 375 adjacent thereto. The third color pattern 385 may be arranged to be spaced apart from the third color filter 380 and overlap with the non-light emitting area NLA. The third color pattern 385 may be arranged to overlap with the first color filter 360 and the second color filter 370 in the non-light emitting area NLA. The third color filter 380 and the third color pattern 385 may be in direct contact with the filling layer FIL.

[0167] The third color filter 380 may selectively transmit light of the second color (e.g., green light) and block or absorb light of the first color (e.g., red light) and light of the third color (e.g., blue light). For example, the third color filter 380 may be a green color filter and may include a green colorant such as a green dye or a green pigment.

[0168] As described above, in the non-light emitting area NLA, the first color filter 360, the second color filter 370, and the third color filter 380 and the first color pattern 365, the second color pattern 375, and the third color pattern 385 may overlap to block or absorb light. For example, the first color pattern 365, the second color filter 370, and the third color filter 380 may overlap in the non-light emitting area NLA arranged on one side or side of the second light emitting area LA2, and the first color filter 360, the second color pattern 375, and the third color filter 380 may overlap in the non-light emitting area NLA arranged on the other side of the second light emitting area LA2.

[0169] As described above, in the display device 10 according to the embodiment, by forming a filling layer FIL including filling particles FP that scatter light between the wavelength conversion layer WCL and the color filter layer CFL, a pattern having a separate light scattering function can be omitted in the third light emitting area LA3. Therefore, the manufacturing cost according to the mask process can be reduced and the process can be simplified. Since the filling layer FIL is arranged in the entire display area DPA, the light scattering effect can be applied to the third light emitting area LA3 that emits light without light conversion in the wavelength conversion layer WCL, thereby increasing the positive side brightness ratio.

[0170] Hereinafter, the Figure 5 A method for manufacturing the display device 10 according to the embodiment shown in FIG.

[0171] Figures 7 to 9 Schematic cross-sectional views illustrating a method for manufacturing a display device according to an embodiment for each process.

[0172] Reference Figure 7 A first switching element T1, a second switching element T2, and a third switching element T3, a first light emitting element ED1, a second light emitting element ED2, and a third light emitting element ED3, a first insulating layer 120 and a second insulating layer 130, and a pixel defining film 150 are formed on a substrate SUB to form a light emitting element layer EML. A first encapsulation inorganic film 171, an encapsulation organic film 173, and a second encapsulation inorganic film 175 are formed on the light emitting element layer EML to form a thin film encapsulation layer TFEL.

[0173] The light emitting element layer EML and the thin film encapsulation layer TFEL arranged on the substrate SUB may be formed by depositing a material (such as a metal material) forming each layer and patterning the material using a mask. The first insulating layer 120 and the second insulating layer 130 and the pixel defining film 150 may be formed by applying a material (such as an insulating material) forming each layer or by a patterning process using a mask. The description of the structure of the multiple layers arranged on the substrate SUB is the same as above, and therefore the detailed description thereof will be omitted.

[0174] The dam 180 is patterned on the thin film encapsulation layer TFEL. Between the plurality of dams 180, a first wavelength conversion pattern 230 is formed in the first light emitting area LA1, and a second wavelength conversion pattern 240 is formed in the second light emitting area LA2. The first wavelength conversion pattern 230 and the second wavelength conversion pattern 240 may be formed using an inkjet printing method. The wavelength conversion layer WCL is formed by stacking a capping layer 300 on the dam 180, the first wavelength conversion pattern 230, the second wavelength conversion pattern 240, and the thin film encapsulation layer TFEL. The capping layer 300 may be formed in the third light emitting area LA3 to be in direct contact with the second encapsulation inorganic film 175 of the thin film encapsulation layer TFEL.

[0175] Reference Figure 8 , a first color filter 360 and a first color pattern 365 are formed by applying and patterning a first color filter material on a counter substrate TSUB. A second color filter 370 and a second color pattern 375 are formed by applying and patterning a second color filter material on a counter substrate TSUB. A third color filter 380 and a third color pattern 385 are formed by applying and patterning a third color filter material on a counter substrate TSUB to form a color filter layer CFL.

[0176] Reference Fig. 9 , a filling material layer FILL is formed by applying a filling material on a substrate SUB on which a wavelength conversion layer WCL is formed. The filling material layer FILL may be formed using a composition including a filling resin FR and filling particles FP dispersed in the filling resin FR. The filling material layer FILL may be formed using a solution process (e.g., spin coating, slit coating, inkjet printing, etc.). In an embodiment, the filling material layer FILL is formed on a substrate SUB, but the present disclosure is not limited thereto, and the filling material layer FILL may also be formed on an opposing substrate TSUB.

[0177] The counter substrate TSUB is aligned on the substrate SUB. In this case, the counter substrate TSUB is aligned so that the color filter layer CFL faces the substrate SUB. The counter substrate TSUB and the substrate SUB are bonded to each other by pressing the counter substrate TSUB and the substrate SUB. When the counter substrate TSUB and the substrate SUB are bonded, the first color filter 360 corresponds to the third light emitting area LA3, the second color filter 370 corresponds to the first light emitting area LA1, and the third color filter 380 corresponds to the second light emitting area LA2.

[0178] The filling material layer FILL is cured by irradiating UV light or applying heat according to the material of the filling material layer FILL to form the filling layer FIL. Thus, the display device 10 in which the filling layer FIL is arranged between the substrate SUB and the counter substrate TSUB can be manufactured.

[0179] In the manufacturing method of the display device 10 according to the embodiment, by forming a filling layer FIL including filling particles that scatter light between the wavelength conversion layer WCL and the color filter layer CFL, a mask process for forming a pattern having a separate light scattering function in the third light emitting area LA3 can be omitted.

[0180] Hereinafter, a display device 10 according to an embodiment will be described with reference to other drawings.

[0181] Fig.10 is a schematic cross-sectional view illustrating a display device according to an embodiment. Fig.11 is a schematic plan view illustrating each light emitting region and non-light emitting region of a display device according to an embodiment.

[0182] Reference Fig.10 and Fig.11 This embodiment is different from the above Figure 5 and Figure 6 The embodiment of the present invention is different in that the wavelength conversion layer WCL and the color filter layer CFL contact each other. Hereinafter, the description overlapping with the above-mentioned embodiment will be omitted, and the difference from the above-mentioned embodiment will be described.

[0183] The display device 10 may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer FIL, a color filter layer CFL, and a counter substrate TSUB.

[0184] The wavelength conversion layer WCL and the color filter layer CFL may contact each other in the non-light emitting area NLA. For example, the capping layer 300 of the wavelength conversion layer WCL may contact the third color filter 380 and the third color pattern 385 of the color filter layer CFL.

[0185] The capping layer 300 and the third color pattern 385 may contact each other in the non-luminescent region NLA arranged on one side or side of the first light-emitting region LA1 (e.g., the other side of the third light-emitting region LA3), and the capping layer 300 and the third color filter 380 may contact each other in the non-luminescent region NLA arranged on the other side of the first light-emitting region LA1 (e.g., one side or side of the second light-emitting region LA2). The capping layer 300 and the third color filter 380 may contact each other in the non-luminescent region NLA arranged on the other side of the second light-emitting region LA2 (e.g., one side or side of the third light-emitting region LA3).

[0186] When the wavelength conversion layer WCL and the color filter layer CFL contact each other, the distance (optical distance) through which light emitted from the wavelength conversion layer WCL reaches the color filter layer CFL can be reduced. Therefore, as the optical distance is reduced, light efficiency can be improved.

[0187] The filling layer FIL may be arranged between the wavelength conversion layer WCL and the color filter layer CFL. Figure 5 and Figure 6 Depending on the implementation manner, the filling layer FIL may be arranged in an island shape.

[0188] The filling layer FIL may include first, second, and third filling patterns FIP1, FIP2, and FIP3 that are spaced apart from each other.

[0189] The first filling pattern FIP1 may be arranged to overlap with the first light emitting area LA1, and may be arranged to overlap with the first wavelength conversion pattern 230 of the wavelength conversion layer WCL. The first filling pattern FIP1 may be arranged between the capping layer 300 and the second color filter 370. The second filling pattern FIP2 may be arranged to overlap with the second light emitting area LA2, and may be arranged to overlap with the second wavelength conversion pattern 240 of the wavelength conversion layer WCL. The second filling pattern FIP2 may be arranged between the capping layer 300 and the third color filter 380. The third filling pattern FIP3 may be arranged to overlap with the third light emitting area LA3. The third filling pattern FIP3 may be arranged between the capping layer 300 and the first color filter 360.

[0190] The first filling pattern FIP1, the second filling pattern FIP2, and the third filling pattern FIP3 may have different or identical at least some areas. For example, the area of ​​the first filling pattern FIP1 and the area of ​​the second filling pattern FIP2 may be the same, and the area of ​​the third filling pattern FIP3 may be smaller than the area of ​​the first filling pattern FIP1 or the area of ​​the second filling pattern FIP2. However, the present disclosure is not limited thereto, and the first filling pattern FIP1, the second filling pattern FIP2, and the third filling pattern FIP3 may also have the same area as each other.

[0191] The thickness TT4 of the first fill pattern FIP1 or the second fill pattern FIP2 may be less than the thickness TT5 of the third fill pattern FIP3. For example, the thickness TT5 of the third fill pattern FIP3 may be greater than the thickness TT4 of the first fill pattern FIP1 or the second fill pattern FIP2. In the case where the thickness TT5 of the third fill pattern FIP3 is greater than the thickness TT4 of the first fill pattern FIP1 or the second fill pattern FIP2, the positive side brightness ratio may be increased by scattering the light emitted from the third light emitting area LA3. In the first light emitting area LA1 and the second light emitting area LA2, since sufficient light scattering occurs from the scatterers of the first wavelength conversion pattern 230 and the second wavelength conversion pattern 240, it is preferred from the viewpoint of efficiency that the thickness TT4 of the first fill pattern FIP1 and the second fill pattern FIP2 is small.

[0192] As described above, the display device 10 according to the embodiment may reduce the optical distance by making the wavelength conversion layer WCL contact the color filter layer CFL, thereby improving light efficiency.

[0193] Fig.12 is a schematic cross-sectional view illustrating a display device according to an embodiment. Fig.13 is a schematic plan view illustrating an example of a spacer of a display device according to an embodiment. Fig.14 is a schematic plan view illustrating another example of the spacer of the display device according to the embodiment.

[0194] Reference Fig.12 and Fig.13 This embodiment is different from the above Figures 5 to 11 The embodiment of FIG. 4 is different in that a spacer CS is further arranged between the wavelength conversion layer WCL and the color filter layer CFL.

[0195] The display device 10 may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer FIL, a spacer CS, a color filter layer CFL, and a counter substrate TSUB.

[0196] The spacer CS may be arranged between the wavelength conversion layer WCL and the color filter layer CFL. The spacer CS may be arranged directly on the capping layer 300 of the wavelength conversion layer WCL and may be in direct contact with the color filter layer CFL. The spacer CS may maintain a gap between the substrate SUB and the counter substrate TSUB. For example, the spacer CS may maintain a gap between the capping layer 300 and the third color filter 380 and between the capping layer 300 and the third color pattern 385.

[0197] The spacer CS may be arranged not to overlap the first, second, and third light emitting areas LA1, LA2, and LA3. The spacer CS may be arranged to overlap the non-light emitting area NLA and may be arranged to overlap the dam 180 of the wavelength conversion layer WCL.

[0198] The thickness of the spacer CS may be in the range of about 0.1 μm to about 4.5 μm. When the thickness of the spacer CS is about 0.1 μm or more, the spacer CS may prevent the structure from being damaged during the bonding process by maintaining a gap between the substrate SUB and the counter substrate TSUB. When the thickness of the spacer CS is about 4.5 μm or less, the spacer CS may prevent the gap of the display device 10 from increasing, thereby realizing a thin display device 10.

[0199] The cross-sectional shape of the spacer CS may be symmetrical. For example, the cross-sectional shape of the spacer CS may be a regular trapezoid, an inverted trapezoid, or a rectangle. However, the present disclosure is not limited thereto, and the cross-sectional shape of the spacer CS may also be asymmetrical.

[0200] In an embodiment, the spacer CS may be arranged in the non-light emitting area NLA and may have a grid shape in a plan view. In this case, as described above Fig.10 and Fig.11 As shown in FIG. , the filling layer FIL may be arranged in an island shape. Fig.10 and Fig.11 The structure of the filling layer FIL is described in detail, and thus a detailed description thereof will be omitted.

[0201] Reference Fig.14 In an embodiment, the spacer CS may be arranged in the non-light emitting area NLA and may be formed in a dot shape in a plan view. At least one or more spacers CS may be arranged between the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 and may be arranged to be spaced apart from each other at equal intervals. However, the present disclosure is not limited thereto, and a plurality of spacers CS may also be arranged to be spaced apart from each other at different intervals.

[0202] In this case, the filling layer FIL may be completely disposed in the display area DPA except the spacer CS. For example, the filling layer FIL may be disposed to overlap each of the first, second, and third light emitting areas LA1, LA2, and LA3 and the non-light emitting area NLA.

[0203] As described above, the display device 10 according to the embodiment may maintain a gap between the substrate SUB and the counter substrate TSUB by disposing the spacer CS between the wavelength conversion layer WCL and the color filter layer CFL, thereby preventing the structure from being damaged during the bonding process.

[0204] Hereinafter, simulation and experimental examples of the above-described display device 10 will be described.

[0205] <Simulation>

[0206] Build includes Figure 5 The display device 10 of the filling layer FIL shown in the figure is simulated, and the front brightness ratio, blue light efficiency ratio and white light efficiency ratio of the third light emitting area LA3 are simulated according to the thickness of the filling layer FIL in the third light emitting area LA3 and the content of the filling particles FP in the filling layer FIL. The filling particles FP in the filling layer FIL are composed of titanium oxide particles. The results of this simulation are shown in Table 1 below. In Table 1 below, the content of the filling particles FP represents the content of the filling particles FP for the entire filling layer composition.

[0207] [Table 1]

[0208]

[0209] Referring to Table 1, as the content of the filling particles FP in the filling layer FIL increases, the front brightness ratio of the third light emitting area LA3 emitting blue light increases, but the blue light efficiency ratio and the white light efficiency ratio decrease. As the thickness of the filling layer FIL in the third light emitting area LA3 decreases, the blue front brightness ratio increases as a whole, and the blue light efficiency ratio and the white light efficiency ratio also increase.

[0210] According to such a result, the content of the filling particles FP in the filling layer FIL can be adjusted to meet the specifications required for the product in consideration of the blue front brightness ratio, the blue light efficiency ratio, and the white light efficiency ratio.

[0211] <Experimental Example>

[0212] Example

[0213] Constructed including Figure 5 In the display device 10 of the filling layer FIL shown in FIG. 1 , the filling particles FP in the filling layer FIL are composed of titanium oxide particles, and the content of the titanium oxide particles is set to 6.5 wt %.

[0214] Comparison Examples

[0215] Instead of the filling layer FIL in the example, a transparent pattern including titanium oxide particles is formed only in the third light emitting area LA3. The content of the titanium oxide particles is set to 6.2 wt%.

[0216] In the display device 10 according to the above-described examples and comparative examples, the light efficiency of the third light emitting area LA3 is measured according to the thickness of the filling layer FIL and the thickness of the transparent pattern. The results of such measurement are shown in Table 2 below.

[0217] [Table 2]

[0218]

[0219] Referring to Table 2, the light efficiency of the third light emitting area LA3 of the display device 10 according to the example increases as the thickness of the filling layer FIL decreases. The light efficiency of the third light emitting area LA3 of the display device 10 according to the comparative example increases as the thickness of the transparent pattern decreases. It is confirmed that the light efficiency of the third light emitting area LA3 in the example is further increased compared with the comparative example.

[0220] From this result, it can be seen that the display device of the example using the filling layer has better blue efficiency than the display device of the comparative example using the transparent pattern.

[0221] At the end of the detailed description, those skilled in the art will recognize that many changes and modifications can be made to the disclosed embodiments without departing substantially from the principles of the present disclosure. Therefore, the disclosed embodiments are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A display device, comprising: Luminous and non-luminous areas; substrate; a light emitting element layer, the light emitting element layer being arranged on the substrate; A thin film encapsulation layer, wherein the thin film encapsulation layer is arranged on the light emitting element layer; a wavelength conversion layer, the wavelength conversion layer being arranged on the thin film encapsulation layer; a counter substrate, the counter substrate facing the substrate; a color filter layer disposed on a surface of the counter substrate; as well as A filling layer is filled between the color filter layer and the wavelength conversion layer, and the filling layer includes filling particles.

2. The display device according to claim 1, wherein: The light emitting area includes a first light emitting area, a second light emitting area and a third light emitting area, and The wavelength conversion layer includes a first wavelength conversion pattern overlapping the first light emitting region and a second wavelength conversion pattern overlapping the second light emitting region.

3. The display device according to claim 2, wherein: The wavelength conversion layer includes a capping layer covering the first wavelength conversion pattern, the second wavelength conversion pattern and the thin film encapsulation layer, and The capping layer is arranged closer to the substrate in the third light emitting region than in the first and second light emitting regions.

4. The display device according to claim 1, wherein: The filling layer includes a filling resin containing the filling particles, and The content of the filler particles is in the range of 1 wt % to 10 wt %.

5. The display device according to claim 1, wherein: The filler particles include light scattering particles.

6. The display device according to claim 5, wherein: The filler particles are at least one selected from the group consisting of silicon dioxide, aluminum oxide, silicon, titanium oxide, zirconium oxide, barium sulfate, zinc oxide, and polymethyl methacrylate.

7. The display device according to claim 1, wherein: The thickness of the filling layer is in the range of 0.1 μm to 10 μm.

8. The display device according to claim 4, wherein: The refractive index of the filling resin of the filling layer is in the range of 1.4 to 1.

7.

9. The display device according to claim 1, wherein: A thickness of the filling layer measured in a vertical direction in one of the plurality of light emitting regions is different from a thickness of the filling layer measured in the vertical direction in another one of the plurality of light emitting regions.

10. The display device according to claim 2, wherein: A thickness of the filling layer measured in the vertical direction in the third light emitting region is greater than a thickness of the filling layer measured in the vertical direction in the first light emitting region or the second light emitting region.

11. The display device according to claim 1, further comprising: A spacer is disposed between the wavelength conversion layer and the color filter layer.

12. The display device according to claim 11, wherein: The spacer overlaps the non-light emitting area and does not overlap the light emitting area.

13. The display device according to claim 11, wherein: The thickness of the spacer is in the range of 0.1 μm to 4.5 μm.

14. The display device according to claim 11, wherein: The planar shape of the spacer is a grid shape or a dot shape.

15. A display device, comprising: Luminous and non-luminous areas; substrate; a light emitting element layer, the light emitting element layer being arranged on the substrate; A thin film encapsulation layer, wherein the thin film encapsulation layer is arranged on the light emitting element layer; a wavelength conversion layer, the wavelength conversion layer being arranged on the thin film encapsulation layer; a counter substrate, the counter substrate facing the substrate; a color filter layer disposed on a surface of the counter substrate; as well as a filling layer, the filling layer being filled between the color filter layer and the wavelength conversion layer and comprising filling particles, Wherein, the color filter layer and the wavelength conversion layer are in contact with each other.

16. The display device according to claim 15, wherein: The filling layer includes a first filling pattern, a second filling pattern, and a third filling pattern overlapping the light emitting region and spaced apart from each other.

17. The display device according to claim 16, wherein: The light emitting area includes a first light emitting area, a second light emitting area and a third light emitting area, and The first filling pattern overlaps with the first light emitting area, the second filling pattern overlaps with the second light emitting area, and the third filling pattern overlaps with the third light emitting area.

18. The display device according to claim 17, wherein: A thickness of the third filling pattern is greater than a thickness of the first filling pattern or a thickness of the second filling pattern.

19. The display device according to claim 15, wherein: The filler particles include light scattering particles and are at least one selected from the group consisting of silica, alumina, silicon, titanium oxide, zirconium oxide, barium sulfate, zinc oxide, and polymethyl methacrylate.

20. The display device according to claim 15, wherein: The filling layer includes a filling resin, the filling particles are dispersed in the filling resin, and The refractive index of the filling resin is in the range of 1.4 to 1.7.

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