Electroplating clamp and electroplating device

Abstract

The invention provides an electroplating clamp and an electroplating device.The electroplating clamp comprises a conductive mechanism, a bearing mechanism and a vacuum mechanism, and the conductive mechanism is used for conducting electricity on a target wafer; the bearing mechanism is used for bearing a target wafer and driving the target wafer to move between a first position and a second position, when the bearing mechanism is located at the first position, the bearing mechanism is used for clamping the target wafer together with the conductive mechanism, the conductive mechanism conducts electricity on the target wafer so that the target wafer can be electroplated conveniently, and a gas flow channel is formed in the bearing mechanism and is communicated with the gas flow channel. The gas flow channel penetrates through the bearing mechanism, the vacuum mechanism is communicated with the gas flow channel, and the vacuum mechanism is used for generating a vacuum environment in the gas flow channel to ensure that the bearing mechanism drives the target wafer to move to a second position and is separated from the conductive mechanism, so that the electroplated target wafer is conveniently taken down from the electroplating clamp.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to an electroplating fixture and an electroplating device. Background Art

[0002] In the field of semiconductor processing technology, the semiconductor electroplating process is to deposit a metal film layer on the surface of the wafer through an electroplating device to achieve electrical interconnection between multiple devices on the surface of the wafer. When electroplating the target wafer, a fixture is required to clamp the wafer and energize the wafer to facilitate electroplating.

[0003] At present, some of the existing clamps clamp the wafer by driving the wafer close to the clamping part through the driving part. After the electroplating of the wafer is completed, the driving part drives the wafer to separate from the clamping part, so that the clamp releases the wafer to facilitate the removal of the electroplated wafer. The problem caused by the adoption of the scheme is that the wafer after electroplating is easily stuck by the clamping part, so that the driving part cannot drive the wafer to separate from the clamping part, which makes it inconvenient to replace the wafer. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide an electroplating fixture to solve the technical problem in the prior art that wafer fixtures are prone to clamping wafers.

[0005] To achieve the above purpose, the technical solution adopted in this application is: to provide an electroplating fixture, including: A conductive mechanism, used for conducting electricity to the target wafer; A carrying mechanism, used for carrying a target wafer, and having a first position and a second position, wherein a gas flow channel is provided in the carrying mechanism, and the gas flow channel runs through the carrying mechanism; A vacuum mechanism, connected to the gas flow channel, for creating a vacuum environment in the gas flow channel; When the carrying mechanism is located at the first position, the carrying mechanism is used to clamp the target wafer together with the conductive mechanism, and the conductive mechanism conducts electricity to the target wafer; The carrying mechanism is used to drive the target wafer to move to the second position after a vacuum environment is generated in the gas flow channel, so as to separate the target wafer from the conductive mechanism.

[0006] Optionally, the carrying mechanism includes: A carrying platform having the first position and the second position; A support column, protruding from a side of the carrier platform facing the conductive mechanism, for supporting and adsorbing the target wafer; A telescopic rod connected to the bearing platform; A telescopic driving member, connected to the telescopic rod, and used to drive the telescopic rod to drive the bearing platform to move between the first position and the second position; The gas flow channel sequentially passes through the support column, the bearing platform and the telescopic rod.

[0007] Optionally, the vacuum mechanism comprises: an airway shaft, mounted in the telescopic rod; A rotary joint connected to an end of the airway axis away from the supporting platform; A vacuum generator connected to the rotary joint; The gas flow channel includes a first flow channel, a second flow channel and a third flow channel, the first flow channel, the second flow channel and the third flow channel are connected in sequence, and the first flow channel is arranged in the pillar and passes through the pillar, the second flow channel is arranged in the supporting platform, the third flow channel is arranged in the gas channel axis, and the third flow channel is connected to the rotating joint.

[0008] Optionally, there are multiple pillars, and the multiple pillars are evenly spaced along the circumference of the supporting platform.

[0009] Optionally, the conductive mechanism includes: A fixing ring having a first mounting cavity; A conductive component connected to the first mounting cavity; When the carrying mechanism is located at the first position, the conductive component abuts against the target wafer.

[0010] Optionally, the conductive component includes: A conductive coil is installed in the installation cavity; A conductive ring abuts against the conductive ring and abuts against the target wafer when the supporting mechanism is located at the first position.

[0011] Optionally, the conductive ring comprises: A conductive ring body is installed in the installation cavity; A conductive contact point is convexly disposed on the inner side of the conductive ring body and is used for abutting against a target wafer; There are multiple conductive contacts, and the multiple conductive contacts are evenly spaced along the circumference of the conductive ring body.

[0012] Optionally, the conductive mechanism further includes: A sealing ring is installed in the first installation cavity, and a second installation cavity is provided, and the conductive wire coil is installed in the second installation cavity; The sealing ring is provided with a first sealing portion, and the first sealing portion is used to abut against the target wafer; and the contact portion between the first sealing portion and the target wafer is located inside the contact portion between the conductive contact and the target wafer; The sealing ring is provided with a second sealing portion, and the second sealing portion abuts against the inner wall of the first installation cavity.

[0013] Optionally, a guiding slope is provided on the fixing ring, and the guiding slope is arranged at an angle with the direction from the second position to the first position.

[0014] Optionally, it also includes: The rotating mechanism is connected to the supporting mechanism and is used to drive the supporting mechanism to rotate.

[0015] Optionally, the rotating mechanism comprises: A hollow rotating motor is arranged outside the supporting mechanism; A rotating disc is connected to the rotating shaft of the hollow rotating motor; A guide rod connected to the rotating disk, and a guide hole is provided on the bearing mechanism, and the guide rod is slidably connected in the guide hole; When the carrying mechanism is located at the first position, the rotating disk drives the carrying mechanism to rotate via the guide rod.

[0016] Optionally, one end of the guide rod away from the rotating disk passes through the bearing mechanism and is connected to the conductive mechanism; When the carrying mechanism is located at the first position, the rotating disk drives the carrying mechanism to rotate via the guide rod.

[0017] Optionally, the rotating mechanism further includes: The conductive rotating shaft is arranged between the hollow rotating motor and the bearing mechanism and connected to the rotating disk, and is used for conducting electricity to the conductive mechanism through the rotating disk and the guide rod.

[0018] Optionally, it also includes: The lifting mechanism is connected to the hollow rotary motor and is used for immersing the target wafer into the electroplating solution and separating the target wafer from the electroplating solution.

[0019] The beneficial effect of the electroplating fixture provided by the present application is that compared with the prior art, the electroplating fixture provided by the present application includes a conductive mechanism, a supporting mechanism and a vacuum mechanism, wherein the conductive mechanism is used to conduct electricity to the target wafer; the supporting mechanism is used to carry the target wafer and drive the target wafer to move between a first position and a second position, when the supporting mechanism is located at the first position, the supporting mechanism is used to clamp the target wafer together with the conductive mechanism, and the conductive mechanism conducts electricity to the target wafer to facilitate electroplating of the target wafer, a gas flow channel is provided in the supporting mechanism, the gas flow channel runs through the supporting mechanism, the vacuum mechanism is connected to the gas flow channel, and the vacuum mechanism is used to create a vacuum environment in the gas flow channel to ensure that the supporting mechanism drives the target wafer to move to the second position and separate from the conductive mechanism, thereby facilitating the removal of the target wafer after electroplating from the electroplating fixture.

[0020] In a second aspect, the present application also provides an electroplating device, comprising: Electroplating the shell to form a reaction chamber; An electroplating fixture is installed in the reaction chamber, wherein the electroplating fixture is any one of the electroplating fixtures described above.

[0021] Optionally, it also includes: The electroplating housing and the electroplating fixture are installed in the housing. A vacuum interface is provided on the housing. The vacuum interface is used to connect to a vacuum generator. The vacuum generator is used to create a vacuum environment in the housing.

[0022] The beneficial effect of the electroplating device provided by the present application is that: compared with the prior art, the electroplating device provided by the present application includes an electroplating fixture provided by any one of the above items, and the electroplating fixture includes a conductive mechanism, a supporting mechanism and a vacuum mechanism, wherein the conductive mechanism is used to conduct electricity to the target wafer; the supporting mechanism is used to carry the target wafer and drive the target wafer to move between a first position and a second position, when the supporting mechanism is located at the first position, the supporting mechanism is used to clamp the target wafer together with the conductive mechanism, and the conductive mechanism conducts electricity to the target wafer to facilitate electroplating of the target wafer, a gas flow channel is provided in the supporting mechanism, the gas flow channel runs through the supporting mechanism, the vacuum mechanism is connected to the gas flow channel, and the vacuum mechanism is used to create a vacuum environment in the gas flow channel to ensure that the supporting mechanism drives the target wafer to move to the second position and separate from the conductive mechanism, thereby facilitating the removal of the target wafer after electroplating from the electroplating fixture. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0024] Figure 1 A schematic diagram of the structure of an electroplating device provided in an embodiment of the present application; Figure 2 A three-dimensional diagram of the electroplating fixture and the electroplating housing provided in an embodiment of the present application after being assembled; Figure 3 A front view of the electroplating fixture and the electroplating housing provided in an embodiment of the present application after being assembled; Figure 4 An exploded view of an electroplating fixture and an electroplating housing provided in an embodiment of the present application; Figure 5 A cross-sectional view of the electroplating fixture and the electroplating housing provided in an embodiment of the present application after being assembled; Figure 6 A cross-sectional view of an electroplating fixture provided in an embodiment of the present application; Figure 7 This is an enlarged view of the structure of section A in 6; Figure 8 A schematic diagram of the gas flow channel structure provided in an embodiment of the present application; Fig. 9 A schematic diagram of a conductive ring structure provided in an embodiment of the present application; Fig.10 A schematic diagram of a conductive ring structure provided in another embodiment of the present application; Fig.11 A schematic diagram of a conductive ring structure provided in another embodiment of the present application;. Fig.12 A schematic diagram of the structure of the guide rod provided in the embodiment of the present application; Fig.13 A schematic diagram of the structure of the guide rod and the support platform after cooperation provided in an embodiment of the present application.

[0025] Among them, the reference numerals in the figure are: 10. Conductive mechanism; 11. Fixing ring; 11a. First fixing ring; 11a1. Third sealing part; 11b. Second fixing ring; 11b1. Guide slope; 12. Conducting coil; 13. Conductive ring; 131. Conductive ring body; 132. Conductive contact; 1321. Contact part; 1322. Connecting part; 14. Sealing ring; 142. First sealing part; 143. Second sealing part; 20. Carrying mechanism; 21. Carrying platform; 211. Sealing ring; 212. Guide hole; 22. Pillar; 23. Telescopic rod; 24. Telescopic driving member; 25. Driving plate; 26. Pad sheet; 27, carrier base; 28, cavity; 30, vacuum mechanism; 31, airway axis; 32, rotary joint; 33, first flow channel; 34, second flow channel; 35, third flow channel; 40, target wafer; 50, rotating mechanism; 51, hollow rotating motor; 511, stator; 512, rotating shaft; 52, rotating disk; 521, metal rotating disk; 522, non-metallic rotating disk; 53, guide rod; 54, conductive rotating shaft; 55, conductive slip ring; 60, electroplating device; 70, electroplating shell; 71, reaction chamber; 72, liquid injection port; 73, liquid outlet; 80, shell. DETAILED DESCRIPTION

[0026] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0027] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0028] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0029] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0030] Please also read Figures 1 to 13 , the electroplating fixture provided in the embodiment of the present application is now described.

[0031] A first aspect of the present application is to provide an electroplating fixture, comprising a conductive mechanism 10 , a supporting mechanism 20 and a vacuum mechanism 30 .

[0032] See also Figures 2 to 8 , wherein the conductive mechanism 10 is used to conduct electricity to the target wafer 40 , and the conductive structure is in a fixed state, such as fixing the conductive mechanism 10 at a preset position so that the supporting mechanism 20 can move relative to the conductive mechanism 10 .

[0033] The carrying mechanism 20 is used to carry the target wafer 40 and has a first position and a second position. The carrying mechanism 20 is used to drive the target wafer 40 to move relative to the conductive mechanism 10 between the first position and the second position, wherein the first position is the position when the carrying mechanism 20 is in contact with the conductive mechanism 10, and at this time, the target wafer 40 and the conductive mechanism 10 can be located below the liquid surface of the electroplating solution, or can be located above the liquid surface of the electroplating solution. When the target wafer 40 and the conductive mechanism 10 can be located below the liquid surface of the electroplating solution, the electroplating process is performed on the surface to be electroplated of the target wafer 40. The second position is the position when the carrying mechanism 20 is separated from the conductive mechanism 10, and at this time, the target wafer 40 and the conductive mechanism 10 are located above the liquid surface of the electroplating solution.

[0034] Initially, the supporting mechanism 20 is located at the second position. After the target wafer 40 to be electroplated is placed on the supporting mechanism 20, the supporting mechanism 20 moves to the first position so that the target wafer 40 abuts against the conductive mechanism 10. The supporting mechanism 20 and the conductive mechanism 10 jointly clamp the target wafer 40, and the target wafer 40 and the conductive mechanism 10 are located below the liquid surface of the electroplating solution, and the conductive mechanism 10 conducts electricity to the target wafer 40 to facilitate electroplating of the target wafer 40.

[0035] A gas flow channel is provided in the carrier mechanism 20, and the gas flow channel runs through the carrier mechanism 20. The vacuum mechanism 30 is connected to the gas flow channel, and the vacuum mechanism is used to create a vacuum environment in the gas flow channel.

[0036] After the target wafer 40 is electroplated, the vacuum mechanism 30 creates a vacuum environment in the gas flow channel, so that the gas flow channel in the supporting mechanism 20 drives the target wafer 40 to move to the second position under the adsorption of the vacuum environment. When the supporting mechanism 20 is located at the second position, the supporting mechanism 20 drives the target wafer 40 to separate from the conductive mechanism 10 to facilitate the replacement of the target wafer 40 that has completed electroplating.

[0037] Compared with the prior art, the electroplating fixture provided in the present application includes a conductive mechanism 10, a supporting mechanism 20 and a vacuum mechanism 30, wherein the conductive mechanism 10 is used to conduct electricity to a target wafer 40; the supporting mechanism 20 is used to carry the target wafer 40 and drive the target wafer 40 to move between a first position and a second position. When the supporting mechanism 20 is located at the first position, the supporting mechanism 20 is used to clamp the target wafer 40 together with the conductive mechanism 10, and the conductive mechanism 10 conducts electricity to the target wafer 40, so as to facilitate electroplating the target wafer 40. A gas flow channel is provided in the supporting mechanism 20, and the gas flow channel runs through the supporting mechanism 20. The vacuum mechanism 30 is connected to the gas flow channel. The vacuum mechanism 30 is used to create a vacuum environment in the gas flow channel to ensure that the supporting mechanism 20 drives the target wafer 40 to move to the second position and separate from the conductive mechanism 10, so as to facilitate removing the target wafer 40 after electroplating from the electroplating fixture.

[0038] See also Figures 2 to 6 In the present application, the bearing mechanism 20 includes a bearing platform 21 , a support column 22 , a telescopic rod 23 and a telescopic driving member 24 .

[0039] Specifically, the carrier platform 21 has a first position and a second position. The support column 22 is protrudingly disposed on a side of the carrier platform 21 facing the conductive mechanism 10 , and is used to support and absorb the target wafer 40 .

[0040] The telescopic rod 23 is fixedly connected to the bearing platform 21 . A driving plate 25 is provided on the telescopic rod 23 . The driving plate 25 is protruded on the side wall of the telescopic rod 23 along a direction perpendicular to the axial direction of the telescopic rod 23 .

[0041] The telescopic driving member 24 is a cylinder, which includes a cylinder body and a piston rod connected to the cylinder body and sliding relative to the cylinder body along the axial direction of the telescopic rod 23. The piston rod is connected to the driving plate 25 of the telescopic rod 23, and the cylinder body is in a fixed state. When the piston rod moves along the axial direction of the telescopic rod 23, the driving plate 25 drives the telescopic rod 23 to drive the supporting platform 21 to move between the first position and the second position.

[0042] The telescopic rod 23 is hollow, and the gas flow channel sequentially passes through the pillar 22, the carrier 21 and the telescopic rod 23. That is, the gas flow channel is partially arranged in the pillar 22, partially arranged on the carrier 21, and another part is arranged in the telescopic rod 23, and one opening of the gas flow channel is located on the side of the pillar 22 facing the target wafer 40, and the other opening of the gas flow channel is located on the telescopic rod 23, and the vacuum mechanism 30 is connected to the opening of the gas flow channel located on the telescopic rod 23.

[0043] After completing the electroplating process on the target wafer 40, the vacuum mechanism 30 is started to create a vacuum environment in the gas flow channel. The target wafer 40 is adsorbed on the end of the pillar 22 facing the target wafer 40 under the action of the adsorption force of the vacuum environment in the gas flow channel. Then the telescopic drive member 24 is started to move the carrier table 21 to the second position. Since the pillar 22 protrudes on the carrier table 21, there is a gap between the target wafer 40 and the carrier table 21. The robot can be inserted into the gap to take out the target wafer 40 after electroplating, and place a new target wafer 40 to be electroplated on the pillar 22.

[0044] See also Figures 2 to 4 In one embodiment of the present application, the cylinder is disposed above the driving plate 25. When the piston rod extends relative to the cylinder body, the carrier 21 moves from the first position to the second position, and when the piston rod retracts relative to the cylinder body, the carrier 21 moves from the second position to the first position.

[0045] In another embodiment of the present application, the cylinder is disposed below the driving plate 25. When the piston rod extends relative to the cylinder body, the carrier 21 moves from the second position to the first position, and when the piston rod retracts relative to the cylinder body, the carrier 21 moves from the first position to the second position.

[0046] In another embodiment of the present application, the telescopic driving member 24 is a servo motor, a lead screw is connected to the rotating shaft 512 of the servo motor, a lead screw nut is fixedly connected to the driving plate 25, and the lead screw nut is threadedly connected to the lead screw. When the servo motor rotates, the lead screw drives the driving plate 25 through the lead screw nut to drive the telescopic rod 23 to move, thereby realizing the movement of the support platform 21 between the first position and the second position.

[0047] In one embodiment of the present application, the vacuum mechanism 30 includes an airway shaft 31 , a rotary joint 32 , and a vacuum generator (not shown in the figure).

[0048] See also Figure 7 Specifically, the airway shaft 31 is installed in the telescopic rod 23. The airway shaft 31 is away from the support platform 21 and extends to the outside of the telescopic rod. The rotary joint 32 is connected to the end of the airway shaft 31 away from the support platform 21. The vacuum generator is connected to the rotary joint 32.

[0049] The gas flow channel includes a first flow channel 33, a second flow channel 34 and a third flow channel 35, which are connected in sequence. The first flow channel 33 is arranged in the pillar 22 and passes through the pillar 22, the second flow channel is arranged in the supporting platform 21, the third flow channel 35 is arranged in the gas channel shaft 31, and the third flow channel 35 is connected to the rotating joint 32.

[0050] See also Figure 4 In one embodiment of the present application, a gasket 26 is provided at one end of the pillar 22 facing the target wafer 40, wherein the gasket 26 can be made of any one material selected from the group consisting of polyethylene, polyester, and polyimide, wherein the gasket 26 is used to increase the friction between the target wafer 40 and the pillar 22 to prevent the target wafer 40 from moving relative to the support platform 21 along the radial direction of the support platform 21.

[0051] In one implementation of the present application, there are multiple pillars 22 , and the multiple pillars 22 are evenly spaced along the circumference of the supporting platform 21 .

[0052] Specifically, the number of the pillars 22 is an even number greater than four.

[0053] Preferably, the number of the pillars 22 is 6, and the 6 pillars 22 are evenly spaced along the circumference of the carrier 21. The gap between any two adjacent pillars 22 allows the robot to pass through, so that the robot can place the wafer to be electroplated on the pillars 22 and the robot can remove the target wafer 40 that has completed the electroplating process from the pillars 22.

[0054] It should be noted that when the number of the pillars 22 is 6, the number of the first flow channels 33 and the number of the second flow channels 34 are both 6. Each first flow channel 33 is arranged in the pillar 22 opposite thereto. The 6 second flow channels 34 extend radially outward from the center of the carrier 21, and each second flow channel 34 is connected to the corresponding first flow channel 33, and the end of each second flow channel 34 away from the first flow channel 33 is connected to the third flow channel 35.

[0055] The six pillars 22 are all in contact with the edge of the target wafer 40 to provide a uniform clamping force to the target wafer 40 when the carrier 21 is located at the first position.

[0056] In one embodiment of the present application, the conductive mechanism 10 includes a fixing ring 11 and a conductive component.

[0057] See also Figures 6 to 8 Specifically, the fixing ring 11 is fixed at a preset position, and a first mounting cavity is provided on the fixing ring 11. The conductive component is connected in the first mounting cavity. When the carrying mechanism 20 is located at the first position, the conductive component abuts against the target wafer 40.

[0058] The conductive assembly includes a conductive coil 12 and a conductive ring 13. Both the conductive coil 12 and the conductive ring 13 are installed in the installation cavity. The conductive ring 13 abuts against the conductive coil 12 and abuts against the target wafer 40 when the supporting mechanism 20 is in the first position to conduct cathode current to the target wafer 40.

[0059] In another embodiment of the present application, please refer to Figures 6 to 8 There are two fixing rings 11, the two fixing rings 11 are respectively a first fixing ring 11a and a second fixing ring 11b, the second fixing ring 11b is fixed at a preset position, and the first fixing ring 11a is fixedly connected to the first fixing ring 11a by screws.

[0060] The first installation cavity is annular and is formed in the first fixing ring 11a. The first installation cavity has an opening, and the opening of the first installation cavity faces the target wafer 40. The bottom wall of the first installation cavity and a side wall adjacent to the bottom wall are arranged on the first fixing ring 11a, and the other side wall adjacent to the bottom wall in the first installation cavity is arranged on the second fixing ring 11b.

[0061] The conductive coil 12 and the conductive ring 13 are both installed in the first installation cavity and are located on the side wall of the first installation cavity located on the second fixing ring 11 b.

[0062] The conductive ring 13 includes a conductive ring body 131 and a conductive contact 132. The conductive ring body 131 is installed in the first installation cavity. The conductive contact 132 is protrudingly arranged on the inner side of the conductive ring body 131 for contacting with the target wafer 40.

[0063] See also Fig. 9 The conductive contact 132 includes a contact portion 1321 and a connecting portion 1322. The contact portion 1321 is connected to the conductive ring 13 body through the connecting portion 1322. The contact portion 1321 and the conductive ring 13 body are arranged at an angle, and the contact portion 1321 is parallel to the conductive ring 13 body. When the carrier 21 is located at the first position, the contact portion 1321 abuts against the surface to be plated of the target wafer 40.

[0064] There are multiple conductive contacts 132 , and the multiple conductive contacts 132 are evenly spaced apart along the circumference of the conductive ring 13 body.

[0065] By providing a plurality of conductive contacts 132 , a uniform cathode current is provided to the surface to be electroplated of the target wafer 40 in the circumferential direction of the target wafer 40 .

[0066] In another embodiment of the present application, see Fig.10 , the conductive contact 132 and the conductive ring 13 body are located in the same plane.

[0067] In another embodiment of the present application, please refer to Fig.11The contact portion 1321 on the conductive contact 132 is disposed at an angle to the connecting portion 1322 , and the connecting portion 1322 is disposed at an angle to the body of the conductive ring 13 .

[0068] Specifically, the connection portion 1322 is bent relative to the conductive ring 13 body from the second fixing ring 11b toward the first fixing ring 11a, and the contact portion 1321 is bent relative to the connection portion 1322 from the first fixing ring 11a toward the second fixing ring 11b.

[0069] In one embodiment of the present application, the conductive mechanism 10 further includes a sealing ring 14 .

[0070] See also Figure 8 The sealing ring 14 is installed in the first installation cavity, and a second installation cavity is provided on the sealing ring 14, the opening of the second installation cavity faces the second fixing ring 11b, the conductive ring 12 and the conductive ring 13 are both installed in the second installation cavity, and the side of the sealing ring 14 facing away from the opening of the second installation cavity abuts against the side wall of the first installation cavity located on the first fixing ring 11a.

[0071] The sealing ring 14 is provided with a first sealing portion 142 for contacting the target wafer 40 , and the contacting portion between the first sealing portion 142 and the target wafer 40 is located inside the contacting portion between the conductive contact 132 and the target wafer 40 .

[0072] The sealing ring 14 is provided with a second sealing portion 143 , which abuts against the inner wall of the first installation cavity.

[0073] Specifically, the second sealing portion 143 abuts against the side wall of the first installation cavity located on the second fixing ring 11 b to seal the connection portion 1322 between the first fixing ring 11 a and the second fixing ring 11 b .

[0074] See also Figure 6 and Figure 7 A third sealing portion 11a1 is provided on the first fixing ring 11a, and the third sealing portion 11a1 is used to abut against the carrier platform 21 when the carrier platform 21 is located at the first position, thereby cooperating with the first sealing portion 142 to seal the second fixing ring 11b, the wire coil 12 and the conductive ring 13 to prevent the plating liquid from contaminating the wire coil 12 and the conductive ring 13.

[0075] It should be noted that, initially, the carrier 21 is located in the second position, when the target wafer 40 to be electroplated is placed on the pillar 22, at this time, the conductive mechanism 10 is located above the liquid level of the electroplating solution, and when the carrier 21 drives the target wafer 40 to move to the first position, at this time, the carrier 21 abuts against the third sealing portion 11a1 on the first fixing ring 11a, and the first sealing portion 142 abuts against the surface to be electroplated of the target wafer 40, and the conductive coil 12 and the conductive ring 13 are sealed, and then the conductive mechanism 10 is immersed below the liquid level of the electroplating solution to facilitate the electroplating process on the target wafer 40.

[0076] In one embodiment of the present application, see Figure 6 and Figure 7 A sealing ring 211 is provided on the carrier platform 21. When the carrier platform 21 is located at the first position, the sealing ring 211 abuts against the third sealing portion 11a1.

[0077] In one embodiment of the present application, see Figure 8 A guiding inclined surface 11b1 is provided on the second fixing ring 11b, and the guiding inclined surface 11b1 is arranged at an angle with the direction from the second position to the first position.

[0078] The second fixing ring 11b is provided with a guiding inclined surface 11b1 so that the second fixing ring 11b has a guiding function for the target wafer 40. When the center of the target wafer 40 deviates from the center of the carrier 21, the guiding inclined surface 11b1 guides the target wafer 40 during the process of the carrier 21 moving from the second position to the first position, so as to guide the center of the target wafer 40 to move to the center of the carrier 21.

[0079] In one embodiment of the present application, the electroplating fixture further includes a rotating mechanism 50. The rotating mechanism 50 is connected to the supporting mechanism 20 and is used to drive the supporting mechanism 20 to rotate.

[0080] Please refer to 2 to Figure 6 , wherein, when the carrier 21 in the carrier mechanism 20 is located at the first position and the target wafer 40 and the conductive mechanism 10 are both located below the liquid surface of the electroplating solution, the rotating mechanism 50 drives the target wafer 40 to rotate through the carrier mechanism 20 to achieve rotary electroplating of the target wafer 40. When the carrier 21 in the carrier mechanism 20 is located at the first position and the target wafer 40 and the conductive mechanism 10 are both located above the liquid surface of the electroplating solution, the rotating mechanism drives the target wafer 40 to rotate through the carrier mechanism 20, so that the excess electroplating solution on the target wafer 40 is separated from the target wafer 40.

[0081] Alternatively, when the carrier 21 in the carrier mechanism 20 is located at the second position and the target wafer 40 and the conductive mechanism 10 are both located above the liquid surface of the electroplating solution, the rotating mechanism drives the target wafer 40 to rotate through the carrier mechanism 20, thereby separating excess electroplating solution on the target wafer 40 from the target wafer 40.

[0082] For details, please refer to Figures 2 to 6 ,as well as Fig.12 and Fig.13 In the present application, the rotating mechanism 50 includes a hollow rotating motor 51 , a rotating disk 52 and a guide rod 53 .

[0083] The hollow rotating motor 51 includes a stator 511 and a rotating shaft 512 connected to and driven by the stator 511 . The stator 511 and the rotating shaft 512 are both hollow and located outside the telescopic rod 23 in the supporting mechanism 20 .

[0084] The rotating disk 52 is connected to one end of the rotating shaft 512 of the hollow rotating motor 51 away from the stator 511. The guide rod 53 is connected to one end of the rotating disk 52 away from the rotating shaft 512. The bearing platform 21 in the bearing mechanism 20 is provided with a guide hole 212, and the guide rod 53 is slidably connected in the guide hole 212.

[0085] When the carrier 21 is located at the first position and the target wafer 40 and the conductive mechanism 10 are both located below the liquid surface of the electroplating solution, the hollow rotating motor 51 is started, and the rotating shaft 512 of the hollow rotating motor 51 drives the rotating disk 52 to rotate when rotating. When the rotating disk 52 rotates, the carrier 21 and the conductive mechanism 10 in the carrier mechanism 20 are driven by the guide rod 53 to drive the target wafer 40 to rotate, thereby realizing rotational electroplating of the target wafer 40.

[0086] When the carrier 21 is located at the first position and the target wafer 40 and the conductive mechanism 10 are both located above the liquid surface of the electroplating solution, the hollow rotary motor 51 is started, and the rotating shaft 512 of the hollow rotary motor 51 drives the rotating disk 52 to rotate when rotating. When the rotating disk 52 rotates, the carrier 21 and the conductive mechanism 10 in the carrier mechanism 20 drive the target wafer 40 to rotate through the guide rod 53, so that the excess electroplating solution on the target wafer 40 is separated from the target wafer 40. Subsequently, the vacuum generator and the telescopic driving member are started, so that the carrier 21 drives the target wafer 40 to move to the second position, so that the robot can take off the target wafer 40 that has completed the electroplating process and place the next target wafer 40 to be electroplated on the pillar 22.

[0087] After the electroplating process of the target wafer 40 is completed, the vacuum generator and the telescopic driving member are started, so that the carrier 21 drives the target wafer 40 to move to the second position, at which time the hollow rotary motor 51 is started, and the rotating shaft 512 of the hollow rotary motor 51 drives the rotating disk 52 to rotate when rotating, and the rotating disk 52 drives the carrier 21 and the conductive mechanism 10 in the carrier mechanism 20 to drive the target wafer 40 to rotate through the guide rod 53, so that the excess electroplating liquid on the target wafer 40 is separated from the target wafer 40. Subsequently, the robot removes the target wafer 40 that has completed the electroplating process and places the next target wafer 40 to be electroplated on the pillar 22.

[0088] In another embodiment of the present application, see Fig.12 and Fig.13 The guide hole 212 passes through the supporting platform 21, and the end of the guide rod 53 away from the rotating disk 52 passes through the supporting mechanism 20 and is connected to the second fixing ring 11b in the conductive mechanism 10, thereby fixing the conductive mechanism 10, wherein the second fixing ring 11b is fixedly connected to the guide rod 53 by bolts.

[0089] When the guide rod 53 drives the carrying platform 21 to rotate, the guide rod 53 drives the conductive mechanism 10 and the carrying platform 21 to rotate synchronously.

[0090] In one embodiment of the present application, the supporting mechanism 20 also includes a supporting platform base 27, which is connected to the side of the supporting platform 21 away from the conductive mechanism 10, and a cavity 28 is formed between the supporting platform base 27 and the supporting platform 21, and the rotating disk 52 is rotatably connected in the cavity 28.

[0091] Specifically, one end of the rotating shaft 512 of the hollow rotating motor 51 away from the stator 511 extends into the cavity 28 between the supporting base and the supporting platform 21 , and the rotating shaft 512 of the hollow rotating motor 51 is fixedly connected to the rotating disk 52 to drive the rotating disk 52 to rotate.

[0092] In one embodiment of the present application, the rotating mechanism 50 further includes a conductive rotating shaft 54 ​​.

[0093] See also Figure 5 and Figure 6 The conductive rotating shaft 54 ​​is arranged between the hollow rotating motor 51 and the supporting mechanism 20 and is connected to the rotating disk 52 for conducting electricity to the conductive mechanism 10 through the rotating disk and the guide rod 53 .

[0094] Specifically, in the present application, the conductive rotating shaft 54 ​​is disposed between the hollow rotating motor 51 and the telescopic rod 23 , and the conductive rotating shaft 54 ​​rotates relative to the telescopic rod 23 .

[0095] The rotating disk 52 includes a metal rotating disk 521 and a non-metal rotating disk 522, the metal rotating disk 521 is fixedly connected to the non-metal rotating disk 522 by bolts, the guide rod 53 is connected to the metal rotating disk, the non-metal rotating disk 522 is fixedly connected to the rotating shaft 512 of the hollow rotating motor 51, and one end of the conductive rotating shaft 54 ​​extends to the inside of the cavity 28 and is fixedly connected to the metal rotating disk 521. The other end of the conductive rotating shaft 54 ​​extends to the outside of the stator 511 of the hollow rotating motor 51, and a conductive slip ring 55 is connected to one end of the conductive rotating shaft 54 ​​located outside the stator 511.

[0096] When the carrier 21 is located at the first position and the target wafer 40 and the conductive mechanism 10 are both located below the liquid surface of the electroplating solution, and the shaft 512 of the hollow rotating motor 51 is rotating, the shaft 512 drives the non-metallic rotating disk 522 to rotate, the non-metallic rotating disk 522 drives the metal rotating disk 521 to rotate, the metal rotating disk 521 drives the carrier 20 to rotate through the guide rod 53, and at the same time, the metal rotating disk 521 drives the conductive rotating shaft 54 ​​to rotate, and the guide rod 53 drives the conductive mechanism 10 to rotate.

[0097] The conductive shaft 54 ​​, the metal rotating disk 521 , the guide rod 53 , the second fixing ring 11 b , the conductive coil 12 and the conductive ring 13 are all made of stainless steel, and when the carrier 21 is located at the first position, the target wafer 40 is subjected to rotational conduction.

[0098] In another embodiment of the present application, the number of the guide rods 53 is an even number greater than 0, such as 2, 4 or 6.

[0099] Preferably, the number of the guide rods 53 is 4, and the 4 guide rods 53 are spaced along the circumference of the metal rotating disk 521, and the distance between any two adjacent guide rods 53 can allow the robot to pass through, so that the robot can place the wafer to be electroplated on the pillar 22 and the robot can remove the target wafer 40 that has completed the electroplating process from the pillar 22.

[0100] In another embodiment of the present application, the electroplating fixture further includes a lifting mechanism (not shown in the figure).

[0101] The lifting mechanism is connected to the hollow rotary motor 51 , and is used to immerse the target wafer 40 into the electroplating solution and to separate the target wafer 40 from the electroplating solution.

[0102] Specifically, in the present application, the lifting mechanism includes a lifting cylinder, the cylinder body of the lifting cylinder is in a fixed state, the stator 511 of the hollow rotating motor 51 is connected to the piston rod of the lifting cylinder, and the cylinder body of the lifting cylinder is located below the hollow rotating motor 51.

[0103] After the carrier 21 and the conductive mechanism 10 complete the clamping of the target wafer 40, the piston rod of the lifting cylinder is retracted, so that the hollow rotary motor 51 drives the carrier 20 and the conductive mechanism 10 through the rotating shaft 512 thereon to drive the target wafer 40 to enter below the liquid surface of the electroplating solution, thereby performing the electroplating process on the target wafer 40. After the electroplating process on the target wafer 40 is completed, the piston rod of the lifting cylinder is extended, so that the hollow rotary motor 51 drives the carrier 20 and the conductive mechanism 10 through the rotating shaft 512 thereon to drive the target wafer 40 to move above the liquid surface of the electroplating solution.

[0104] It should be noted that the lifting device is also used to adjust the position of the target wafer 40. When a spraying device is used to make the plating liquid flow to the surface to be plated of the target wafer 40, the lifting device can be used to adjust the distance between the target wafer 40 and the spraying device as needed, such as adjusting the distance between the surface to be plated of the target wafer 40 and the spraying device to within 1-10mm. Preferably, the distance between the surface to be plated of the target wafer 40 and the spraying device can be adjusted to 3mm.

[0105] In a second aspect, the present application further provides an electroplating device 60, including an electroplating shell 70 and an electroplating fixture.

[0106] See also Figures 1 to 5 The electroplating housing 70 is formed with a reaction chamber 71, and the reaction chamber 71 is used to contain the electroplating solution. The electroplating fixture is installed in the reaction chamber 71, wherein the electroplating fixture is the electroplating fixture provided by any one of the above embodiments.

[0107] In one implementation of the present application, a liquid injection port 72 and a liquid outlet 73 are provided on the reaction chamber 71, and the liquid injection port 72 and the liquid outlet 73 are both connected to the reaction chamber 71, wherein the liquid injection port 72 is connected to a liquid injection pump (not shown in the figure), and the liquid outlet 73 is connected to a liquid outlet pump (not shown in the figure). The liquid injection pump is used to inject the plating liquid into the reaction chamber 71, and the liquid outlet pump is used to discharge the plating liquid in the reaction chamber 71, so as to adjust the liquid level of the plating liquid in the reaction chamber 71. For example, the plating liquid in the reaction chamber 71 is discharged by the liquid outlet pump so that the target wafer 40 is located above the liquid level of the plating liquid, and the plating liquid is injected into the reaction chamber 71 by the liquid injection pump so that the target wafer 40 is located below the liquid level of the plating liquid.

[0108] In another embodiment of the present application, see Figure 1 The electroplating device 60 also includes a shell 80, in which the electroplating shell 70 and the electroplating fixture are installed. A vacuum interface is provided on the shell 80, and the vacuum interface is used to connect to a vacuum generator, and the vacuum generator is used to create a vacuum environment in the shell 80.

[0109] It should be noted that the pressure in the vacuum environment of the shell 80 is lower than the atmospheric pressure in the environment of the wafer electroplating device 60, and when the vacuum environment is generated in the shell 80, the force acting upward on the electroplating liquid in the shell 80 is lower than the gravity of the electroplating liquid, so as to prevent the electroplating liquid from being drawn out of the reaction chamber 71. Under the action of the negative pressure in the vacuum environment, the bubbles adhering to the surface to be electroplated of the target wafer 40 are separated from the surface to be electroplated of the target wafer 40, so as to prevent the surface to be electroplated of the target wafer 40 from generating holes and defects during the electroplating process, thereby ensuring the electroplating effect of the target wafer 40.

[0110] Compared with the prior art, the electroplating device 60 provided in the present application includes an electroplating fixture provided by any one of the above items, and the electroplating fixture includes a conductive mechanism 10 and a supporting mechanism 20, wherein the conductive mechanism 10 is used to conduct electricity to the target wafer 40; the supporting mechanism 20 is used to carry the target wafer 40 and drive the target wafer 40 to move between a first position and a second position. When the supporting mechanism 20 is in the first position, the supporting mechanism 20 is used to clamp the target wafer 40 together with the conductive mechanism 10, and the conductive mechanism 10 conducts electricity to the target wafer 40 to facilitate electroplating of the target wafer 40. A gas flow channel is provided in the supporting mechanism 20, and the gas flow channel runs through the supporting mechanism 20. When the supporting mechanism 20 is in the second position, a vacuum environment is generated in the gas flow channel to ensure that the supporting mechanism 20 drives the target wafer 40 to separate from the conductive mechanism 10, thereby facilitating the removal of the target wafer 40 after electroplating from the electroplating fixture. The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An electroplating fixture, characterized in that: include: A conductive mechanism, used for conducting electricity to the target wafer; A carrying mechanism, used for carrying a target wafer, and having a first position and a second position, wherein a gas flow channel is provided in the carrying mechanism, and the gas flow channel runs through the carrying mechanism; A vacuum mechanism, connected to the gas flow channel, for creating a vacuum environment in the gas flow channel; When the carrying mechanism is located at the first position, the carrying mechanism is used to clamp the target wafer together with the conductive mechanism, and the conductive mechanism conducts electricity to the target wafer; The carrying mechanism is used to drive the target wafer to move to the second position when a vacuum environment is generated in the gas flow channel, so as to separate the target wafer from the conductive mechanism.

2. The electroplating fixture according to claim 1, characterized in that: The carrying mechanism comprises: A carrying platform having the first position and the second position; A support column, protruding from a side of the carrier platform facing the conductive mechanism, for supporting and adsorbing the target wafer; A telescopic rod connected to the bearing platform; A telescopic driving member, connected to the telescopic rod, and used to drive the telescopic rod to drive the bearing platform to move between the first position and the second position; The gas flow channel sequentially passes through the support column, the bearing platform and the telescopic rod.

3. The electroplating fixture according to claim 2, characterized in that: The vacuum mechanism comprises: an airway shaft, mounted in the telescopic rod; A rotary joint connected to an end of the airway axis away from the supporting platform; A vacuum generator connected to the rotary joint; The gas flow channel includes a first flow channel, a second flow channel and a third flow channel, the first flow channel, the second flow channel and the third flow channel are connected in sequence, and the first flow channel is arranged in the pillar and passes through the pillar, the second flow channel is arranged in the supporting platform, the third flow channel is arranged in the gas channel axis, and the third flow channel is connected to the rotating joint.

4. The electroplating fixture according to claim 3, characterized in that: There are multiple pillars, and the multiple pillars are evenly spaced along the circumference of the supporting platform.

5. The electroplating fixture according to claim 1 or 4, characterized in that: The conductive mechanism comprises: A fixing ring, provided with a first mounting cavity; A conductive component connected to the first mounting cavity; When the carrying mechanism is located at the first position, the conductive component abuts against the target wafer.

6. The electroplating fixture according to claim 5, characterized in that: The conductive component comprises: A conductive coil installed in the first installation cavity; A conductive ring abuts against the conductive ring and abuts against the target wafer when the supporting mechanism is located at the first position.

7. The electroplating fixture according to claim 6, characterized in that: The conductive ring comprises: A conductive ring body is installed in the installation cavity; A conductive contact point is convexly disposed on the inner side of the conductive ring body and is used for abutting against a target wafer; There are multiple conductive contacts, and the multiple conductive contacts are evenly spaced along the circumference of the conductive ring body.

8. The electroplating fixture according to claim 7, characterized in that: The conductive mechanism further comprises: A sealing ring is installed in the first installation cavity, and a second installation cavity is provided, and the conductive wire coil is installed in the second installation cavity; The sealing ring is provided with a first sealing portion, and the first sealing portion is used to abut against the target wafer; and the contact portion between the first sealing portion and the target wafer is located inside the contact portion between the conductive contact and the target wafer; The sealing ring is provided with a second sealing portion, and the second sealing portion abuts against the inner wall of the first installation cavity.

9. The electroplating fixture according to claim 8, characterized in that: The fixing ring is provided with a guiding inclined surface, and the guiding inclined surface is arranged at an angle with the direction in which the second position points to the first position.

10. The electroplating fixture according to claim 1, characterized in that: Also includes: The rotating mechanism is connected to the supporting mechanism and is used to drive the supporting mechanism to rotate.

11. The electroplating fixture according to claim 10, characterized in that: The rotating mechanism comprises: A hollow rotating motor is arranged outside the supporting mechanism; A rotating disc is connected to the rotating shaft of the hollow rotating motor; A guide rod connected to the rotating disk, and a guide hole is provided on the bearing mechanism, and the guide rod is slidably connected in the guide hole; The rotating disk drives the supporting mechanism to rotate via the guide rod.

12. The electroplating fixture according to claim 11, characterized in that: One end of the guide rod away from the rotating disk passes through the bearing mechanism and is connected to the conductive mechanism; When the carrying mechanism is located at the first position, the rotating disk drives the carrying mechanism to rotate via the guide rod.

13. The electroplating fixture according to claim 12, characterized in that: The rotating mechanism also includes: The conductive rotating shaft is arranged between the hollow rotating motor and the bearing mechanism and connected to the rotating disk, and is used for conducting electricity to the conductive mechanism through the rotating disk and the guide rod.

14. The electroplating fixture according to claim 13, characterized in that: Also includes: The lifting mechanism is connected to the hollow rotary motor and is used for immersing the target wafer into the electroplating solution and separating the target wafer from the electroplating solution.

15. An electroplating device, characterized in that: include: Electroplating the shell to form a reaction chamber; An electroplating fixture is installed in the reaction chamber, wherein the electroplating fixture is the electroplating fixture according to any one of claims 1-14.

16. The electroplating device according to claim 15, characterized in that: Also includes: The electroplating housing and the electroplating fixture are installed in the housing. A vacuum interface is provided on the housing. The vacuum interface is used to connect to a vacuum generator. The vacuum generator is used to create a vacuum environment in the housing.

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