Full-band state switching type active frequency selective surface, antenna and communication equipment

Abstract

The invention discloses a full-band state switching type active frequency selective surface, an antenna and communication equipment, and the active frequency selective surface comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate and a fifth dielectric substrate which are sequentially stacked from top to bottom. A first capacitor layer is arranged at the top of the first dielectric substrate, a first feed metal via hole penetrates through the first dielectric substrate, a first inductor layer is arranged on the second dielectric substrate, a second inductor layer is arranged on the fourth dielectric substrate, a second capacitor layer is arranged at the bottom of the fifth dielectric substrate, and a second feed metal via hole penetrates through the fifth dielectric substrate. And a second feed metal via hole penetrates through the fifth dielectric substrate, the first feed metal via hole is connected with the first capacitor layer and the first inductor layer at the upper part, and the second feed metal via hole is connected with the second inductor layer and the second capacitor layer at the lower part. According to the invention, function adjustability is realized, switching between a transmission state and a shielding state can be realized, and limitation of a single function of the frequency selective surface is broken through.

Description

Technical Field

[0001] The invention relates to a full-band state switching active frequency selective surface, an antenna and a communication device, belonging to the technical field of wireless communication and super surface design. Background Art

[0002] With the rapid development of electronic information technology and electromagnetic pulse technology, electronic equipment is getting smaller and smaller, more integrated, more complex, more frequency, and lower power consumption, making its electromagnetic sensitivity problem more and more prominent; in addition, the electromagnetic environment in which electronic equipment is located is becoming more and more complex, facing the electromagnetic pulse threats caused by natural phenomena and electromagnetic pulse threats caused by human factors. The electromagnetic pulse threats caused by natural phenomena include: electrostatic discharge, lightning, etc.; the strong electromagnetic pulse threats caused by human factors include: nuclear electromagnetic pulses generated by high-altitude nuclear explosions, high-power microwaves generated by high-power microwave weapons, etc. Therefore, the development and research of strong electromagnetic pulse protection technology has very important engineering application value.

[0003] Compared with frequency selective surfaces, active frequency selective surfaces have the characteristics of flexible switching between transmission and shielding, and can be well applied to the current complex and changeable electromagnetic environment. Under the premise of ensuring normal signal transmission and reception, the state can be changed at any time to protect against high-power electromagnetic pulses. In addition, with the continuous expansion of communication frequency bands, the existing active frequency selective surfaces still have the design difficulty of covering ultra-wide communication frequency bands, and it is difficult to meet the requirements of today's wireless communication systems. Summary of the invention

[0004] The first purpose of the present invention is to overcome the shortcomings and deficiencies of the prior art and provide a full-band state switching active frequency selective surface. The active frequency selective surface realizes adjustable functions and can switch between the transmission and shielding states, breaking the limitation of the single function of the frequency selective surface. It can achieve ultra-wideband transmission covering the S / C / X / Ku bands, with a transmission bandwidth of 16 GHz, which is far beyond the existing broadband active frequency selective surfaces, and can achieve ultra-wideband shielding characteristics covering 0-18 GHz, which is better than the existing broadband active frequency selective surfaces.

[0005] A second object of the present invention is to provide an antenna comprising the above-mentioned active frequency selective surface.

[0006] A third object of the present invention is to provide a communication device comprising the above antenna.

[0007] The first object of the present invention can be achieved by adopting the following technical solutions:

[0008] A full-band state switching active frequency selective surface comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate and a fifth dielectric substrate which are stacked in sequence from top to bottom, wherein a first capacitor layer is arranged on the top of the first dielectric substrate and a first feeding metal via is penetrated through the first dielectric substrate, a first inductor layer is arranged on the second dielectric substrate, a second inductor layer is arranged on the fourth dielectric substrate, a second capacitor layer is arranged on the bottom of the fifth dielectric substrate and a second feeding metal via is penetrated through the fifth dielectric substrate, the first capacitor layer, the second capacitor layer, the first inductor layer and the second inductor layer are all centrally symmetrical structures, forming a surface periodic unit, the first feeding metal via is connected to the first capacitor layer on the top and the first inductor layer on the bottom, and the second feeding metal via is connected to the second inductor layer on the top and the second capacitor layer on the bottom.

[0009] Further, the first capacitor layer includes four first metal strips, two of which are arranged in parallel in the vertical direction, and the other two are arranged in parallel in the horizontal direction, wherein the two first metal strips are vertically connected to the other two first metal strips, and each first metal strip is provided with a plurality of first diodes;

[0010] The second capacitor layer includes four second metal strips, two of which are arranged in parallel in the vertical direction, and the other two are arranged in parallel in the horizontal direction, two of which are vertically connected to the other two second metal strips, and each second metal strip is provided with a plurality of second diodes.

[0011] Furthermore, each first metal strip includes a plurality of first metal patches, a first welding gap is provided between every two adjacent first metal patches, and a first diode is welded in each first welding gap;

[0012] Each second metal strip includes a plurality of second metal patches, a second welding gap is arranged between every two adjacent second metal patches, and a second diode is welded to each second welding gap.

[0013] Furthermore, the first feeding metal via is located at the intersection of the upper left side and the lower right side of the first metal strip of the first capacitor layer, and the second feeding metal via is located at the intersection of the upper right side and the lower left side of the second metal strip of the second capacitor layer.

[0014] Furthermore, the first inductor layer includes two first spiral inductors, and the two first spiral inductors are arranged in parallel in a vertical direction.

[0015] Furthermore, each first spiral inductor includes a first metal thin wire, a second metal thin wire and a first metal via, the first metal thin wire is arranged in parallel on the top layer of the second dielectric substrate, the second metal thin wire is arranged in parallel on the bottom layer of the second dielectric substrate, and the first metal via connects the first metal thin wire and the second metal thin wire respectively.

[0016] Furthermore, the second inductor layer includes two second spiral inductors, and the two second spiral inductors are arranged in parallel in a horizontal direction.

[0017] Furthermore, each second spiral inductor includes a third metal wire, a fourth metal wire and a second metal via, the third metal wire is arranged in parallel on the top layer of the fourth dielectric substrate, the fourth metal wire is arranged in parallel on the bottom layer of the fourth dielectric substrate, and the second metal via is connected to the third metal wire and the fourth metal wire respectively.

[0018] Furthermore, the thickness of the first dielectric substrate and the fifth dielectric substrate is 0.5 mm to 0.6 mm, the thickness of the second dielectric substrate and the fourth dielectric substrate is 0.2 mm to 0.3 mm, and the thickness of the third dielectric substrate is 1.5 mm to 1.6 mm.

[0019] The second object of the present invention can be achieved by adopting the following technical solutions:

[0020] An antenna comprises at least one full-band state switching active frequency selective surface as described above.

[0021] The third object of the present invention can be achieved by adopting the following technical solutions:

[0022] A communication device comprises the above antenna.

[0023] The present invention has the following beneficial effects compared with the prior art:

[0024] 1. The present invention realizes that when the active frequency selective surface is irradiated by a low-power signal, it has an ultra-wide transmission band. When a high-power microwave (HPM) is incident, the active frequency selective surface has an ultra-wide stop band. It has the functions of high shielding effectiveness and selective energy transmission, low insertion loss transmission at low power, and ultra-wideband protection at high power.

[0025] 2. The present invention adopts a series-parallel hybrid feeding design, which reduces the current and voltage values ​​when large-scale metasurface arrays are deployed, thereby reducing the difficulty of feeding.

[0026] 3. When the diode is cut off, the insertion loss of the present invention is less than 1.5dB in the range of 2-18GHz, and when the diode is turned on, the shielding is greater than 15dB in the range of 0-18GHz, and has the advantages of ultra-wide passband and ultra-wide stopband. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0028] Figure 1 It is a schematic structural diagram of a full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0029] Figure 2 This is a main structural diagram of a full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0030] Figure 3 It is a schematic diagram of the structure of the first capacitor layer of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0031] Figure 4 It is a schematic diagram of the second capacitor layer structure of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0032] Figure 5 It is a top view of the first inductor layer structure of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0033] Figure 6 It is a bottom view of the first inductor layer structure of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0034] Figure 7 It is a top view of the second inductor layer structure of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0035] Figure 8 It is a bottom view of the second inductor layer structure of the full-band state switching active frequency selective surface according to an embodiment of the present invention.

[0036] Fig. 9 It is a schematic diagram of the current direction of the first capacitor layer of the full-band state-switching active frequency selective surface when a DC bias is applied according to an embodiment of the present invention.

[0037] Fig.10It is a transmission coefficient curve diagram of the full-band state switching active frequency selective surface in the wave transmission and protection states according to an embodiment of the present invention.

[0038] Among them, 100-a first dielectric substrate, 101-a first capacitor layer, 102-a first metal strip, 103-a first diode, 110-a first feeding metal via, 200-a second dielectric substrate, 201-a first inductor layer, 202-a first spiral inductor, 300-a third dielectric substrate, 400-a fourth dielectric substrate, 401-a second inductor layer, 402-a second spiral inductor, 500-a fifth dielectric substrate, 501-a second capacitor layer, 502-a second metal strip, 503-a second diode, and 510-a second feeding metal via. DETAILED DESCRIPTION

[0039] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0040] It should be noted that, in the embodiments of the present invention, words such as "for example" are used to indicate examples, illustrations or explanations. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0041] In the embodiments of the present invention, "at least one" refers to one or more, and "more than one" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b and c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0042] Example:

[0043] like Figure 1-2As shown, this embodiment provides a full-band state switching active frequency selective surface, which can be applied to antennas and thus applied to various communication devices, and includes a first dielectric substrate 100, a second dielectric substrate 200, a third dielectric substrate 300, a fourth dielectric substrate 400 and a fifth dielectric substrate 500 stacked in sequence from top to bottom, a first capacitor layer 101 is arranged on the top of the first dielectric substrate 100, and the first dielectric substrate 100 is penetrated by a first feeding metal via 110, and a first inductor layer 200 is arranged on the second dielectric substrate 200. 01, a second inductor layer 401 is disposed on the fourth dielectric substrate 400, a second capacitor layer 501 is disposed at the bottom of the fifth dielectric substrate 500, and a second feeding metal via 510 runs through the fifth dielectric substrate 500, the first capacitor layer 101, the second capacitor layer 501, the first inductor layer 201 and the second inductor layer 202 are all centrally symmetrical structures, forming a surface periodic unit, the first feeding metal via 110 is connected to the first capacitor layer 101 on the top and to the first inductor layer 201 on the bottom, and the second feeding metal via 510 is connected to the second inductor layer 401 on the top and to the second capacitor layer 501 on the bottom.

[0044] like Figure 1 to Figure 3 As shown, the first capacitor layer 101 includes four first metal strips 102, two of which are arranged in parallel in the vertical direction, and the other two of which are arranged in parallel in the horizontal direction, two of which are vertically connected to the other two first metal strips 102, and four first diodes 103 are arranged on each of the first metal strips 102.

[0045] Furthermore, each first metal strip 102 includes five first metal patches, and a first welding gap is arranged between every two adjacent first metal patches, that is, there are four symmetrically arranged first welding gaps, and the positions of the four first welding gaps correspond one-to-one to the four first diodes 103, so that each first welding gap welds a first diode 103.

[0046] like Figure 1-2 , Figure 4 As shown, the structure of the second capacitor layer 501 is the same as that of the first capacitor layer 101, and includes four second metal strips 502, two of which are arranged in parallel in the vertical direction, and the other two second metal strips 502 are arranged in parallel in the horizontal direction, two of which are vertically connected to the other two second metal strips 502, and four second diodes 503 are arranged on each second metal strip 502.

[0047] Furthermore, each second metal strip 502 includes five second metal patches, and a second welding gap is arranged between every two adjacent second metal patches, that is, there are four symmetrically arranged second welding gaps, and the positions of the four second welding gaps correspond one-to-one to the four second diodes 503, so that each second welding gap welds a second diode 503.

[0048] like Figure 1 to Figure 4 As shown, the first feeding metal via 110 is located at the intersection of the upper left and lower right sides of the first metal strip 102 of the first capacitor layer 101, and the second feeding metal via 510 is located at the intersection of the upper right and lower left sides of the second metal strip 502 of the second capacitor layer 501.

[0049] like Figure 1-2 , Figure 5-6 As shown, the first inductor layer 201 includes two first spiral inductors 202 , and the two first spiral inductors 202 are arranged in parallel in the vertical direction.

[0050] Furthermore, each first spiral inductor 202 includes a first metal fine wire, a second metal fine wire and a first metal via. In this embodiment, there are twenty-eight first metal fine wires, which are arranged in parallel on the top layer of the second dielectric substrate 200. In this embodiment, there are twenty-nine second metal fine wires, which are arranged in parallel on the bottom layer of the second dielectric substrate 200. The first metal vias are connected to the first metal fine wires and the second metal fine wires respectively.

[0051] like Figure 1-2 , Figure 7-8 As shown, the second inductor layer 401 includes two second spiral inductors 402 , and the two second spiral inductors 402 are arranged in parallel in the horizontal direction.

[0052] Furthermore, each second spiral inductor includes a third metal fine wire, a fourth metal fine wire and a second metal via. In this embodiment, there are twenty-eight third metal fine wires, which are arranged in parallel on the top layer of the fourth dielectric substrate 400. In this embodiment, there are twenty-nine fourth metal fine wires, which are arranged in parallel on the bottom layer of the fourth dielectric substrate 400. The second metal vias are respectively connected to the third metal fine wires and the fourth metal fine wires.

[0053] In this embodiment, the first dielectric substrate 100, the second dielectric substrate 200, the third dielectric substrate 300, the fourth dielectric substrate 400 and the fifth dielectric substrate 500 are made of the same material, Rogers RT5880, with a dielectric constant of 2.2, wherein the thickness of the first dielectric substrate 100 and the fifth dielectric substrate 500 is 0.508 mm, the thickness of the second dielectric substrate 200 and the fourth dielectric substrate 400 is 0.254 mm, and the thickness of the third dielectric substrate 300 is 1.524 mm; the first diode 103 and the second diode 203 are both PIN diodes.

[0054] like Fig. 9 As shown, it is a schematic diagram of the current direction of the top capacitor layer when a DC bias is applied to the active frequency selective surface of this embodiment; it includes 2*2 units, wherein the + sign represents that the metal patch is connected to the +6V first spiral inductor 102 through the first feeding metal via 110, and the - sign represents that the metal patch is connected to the grounded first spiral inductor 202 through the first feeding metal via 110.

[0055] like Fig.10 As shown, it is a transmission coefficient curve of the active frequency selective surface of this embodiment in the wave-transmitting and protection states. When the diode is cut off, the insertion loss is less than 1.5dB in the range of 2-18GHz. When the diode is turned on, the shielding is greater than 15dB in the range of 0-18GHz. It can be seen that the active frequency selective surface has the advantages of ultra-wide passband, ultra-wide stopband, series-parallel feeding, etc.

[0056] In summary, the active frequency selective surface of the present invention realizes adjustable functions and can switch between the transmission and shielding states, breaking the limitation of the single function of the frequency selective surface. It can achieve ultra-wideband transmission covering the S / C / X / Ku bands, with a transmission bandwidth of 16 GHz, which is far beyond the existing broadband active frequency selective surfaces, and can achieve ultra-wideband shielding characteristics covering 0-18 GHz, which is better than the existing broadband active frequency selective surfaces.

[0057] Although the present invention is described herein in conjunction with the embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the drawings, etc. In the specification, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit can implement several functions listed in the specification. Certain measures are recorded in different embodiments, but this does not mean that these measures cannot be combined to produce good results.

[0058] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the present invention and its equivalents.

Claims

1. A full-band state switching active frequency selective surface, characterized in that: The invention comprises a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate and a fifth dielectric substrate which are stacked in sequence from top to bottom, wherein a first capacitor layer is arranged on the top of the first dielectric substrate, and a first feeding metal via is penetrated through the first dielectric substrate, a first inductor layer is arranged on the second dielectric substrate, a second inductor layer is arranged on the fourth dielectric substrate, a second capacitor layer is arranged on the bottom of the fifth dielectric substrate, and a second feeding metal via is penetrated through the fifth dielectric substrate, the first capacitor layer, the second capacitor layer, the first inductor layer and the second inductor layer are all centrally symmetrical structures, forming a surface periodic unit, the first feeding metal via is connected to the first capacitor layer on the top and the first inductor layer on the bottom, and the second feeding metal via is connected to the second inductor layer on the top and the second capacitor layer on the bottom.

2. The full-band state switching active frequency selective surface according to claim 1, characterized in that: The first capacitor layer includes four first metal strips, two of which are arranged in parallel in the vertical direction, and the other two are arranged in parallel in the horizontal direction, wherein the two first metal strips are vertically connected to the other two first metal strips, and each first metal strip is provided with a plurality of first diodes; The second capacitor layer includes four second metal strips, two of which are arranged in parallel in the vertical direction, and the other two are arranged in parallel in the horizontal direction, two of which are vertically connected to the other two second metal strips, and each second metal strip is provided with a plurality of second diodes.

3. The full-band state switching active frequency selective surface according to claim 2, characterized in that: Each first metal strip includes a plurality of first metal patches, a first welding gap is provided between every two adjacent first metal patches, and a first diode is welded to each first welding gap; Each second metal strip includes a plurality of second metal patches, a second welding gap is arranged between every two adjacent second metal patches, and a second diode is welded to each second welding gap.

4. The full-band state switching active frequency selective surface according to claim 2, characterized in that: The first feeding metal via is located at the intersection of the upper left side and the lower right side of the first metal strip of the first capacitor layer, and the second feeding metal via is located at the intersection of the upper right side and the lower left side of the second metal strip of the second capacitor layer.

5. The full-band state switching active frequency selective surface according to claim 1, characterized in that: The first inductor layer includes two first spiral inductors, and the two first spiral inductors are arranged in parallel in a vertical direction.

6. The full-band state switching active frequency selective surface according to claim 5, characterized in that: Each first spiral inductor includes a first metal thin wire, a second metal thin wire and a first metal via, the first metal thin wire is arranged in parallel on the top layer of the second dielectric substrate, the second metal thin wire is arranged in parallel on the bottom layer of the second dielectric substrate, and the first metal via is connected to the first metal thin wire and the second metal thin wire respectively.

7. The full-band state switching active frequency selective surface according to claim 1, characterized in that: The second inductor layer includes two second spiral inductors, and the two second spiral inductors are arranged in parallel in a horizontal direction.

8. The full-band state switching active frequency selective surface according to claim 7, characterized in that: Each second spiral inductor includes a third metal fine wire, a fourth metal fine wire and a second metal via, the third metal fine wire is arranged in parallel on the top layer of the fourth dielectric substrate, the fourth metal fine wire is arranged in parallel on the bottom layer of the fourth dielectric substrate, and the second metal via is connected to the third metal fine wire and the fourth metal fine wire respectively.

9. An antenna, characterized in that: The invention comprises at least one full-band state switching active frequency selective surface as described in any one of claims 1 to 8.

10. A communication device, characterized in that: Comprising the antenna as claimed in claim 9.

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