Method for preparing microcrystalline silicon film

Abstract

The invention relates to a method for preparing a microcrystalline silicon film, which is carried out by adopting hot filament chemical vapor deposition equipment, and comprises the following steps of: fixing a glass slide on a carrier plate, placing a textured silicon wafer on a silicon wafer groove adjacent to the glass slide, then moving the carrier plate into a feeding cavity, and carrying out vacuumizing treatment; moving the carrier plate in the feeding cavity into a heating cavity, and heating the carrier plate; the carrier plate heated in the heating cavity is moved into the uniform heating cavity, the carrier plate continues to be slowly heated, and the temperature uniformity of the whole carrier plate is guaranteed; and moving the carrier plate which is heated in the uniform heating cavity into a process cavity, and depositing a thin film on the glass slide under a low hydrogen dilution ratio to obtain a microcrystalline silicon thin film sample wafer. HoFCVD equipment is used for preparing the microcrystalline silicon thin film, and the microcrystalline silicon thin film with the high crystallization rate can be prepared at the low hydrogen dilution ratio. Due to the fact that the hydrogen feeding amount is small, the lower pressure can be controlled, the coating uniformity is guaranteed, and meanwhile the cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and more specifically, to a method for preparing a microcrystalline silicon thin film. Background Art

[0002] Crystalline silicon heterojunction cells have multiple advantages such as high conversion efficiency and simple process structure, and have received increasing attention in recent years. The current process route of heterojunction cells has transitioned from amorphous process to microcrystalline process. By using doped microcrystalline silicon oxide instead of doped amorphous silicon, the doping concentration can be further increased, the light transmittance can be increased, and the resistance of the doped layer can be reduced, and the current density can be ultimately increased, so that the battery efficiency can be further improved. However, how to make high-quality microcrystalline silicon films has always been a difficult problem. The current mainstream large-scale coating equipment, such as PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, mainly uses ultra-high hydrogen dilution ratios (about 1:200) and powerful RF power supplies to form high-quality microcrystalline silicon film layers.

[0003] However, when active hydrogen atoms are used to etch away weak bonds in the thin film deposition process to achieve the transformation from amorphous to microcrystalline, the gas utilization rate in the PECVD equipment is low, and a large amount of hydrogen needs to be introduced to form an ultra-high hydrogen dilution ratio, which will increase the cost and pose certain safety risks. If you are not careful, it may cause an explosion. In addition, the PECVD equipment uses a large process gas pressure (500Pa) combined with an ultra-high hydrogen dilution ratio in the process of preparing microcrystalline silicon thin films, which will also make the film thickness uniformity between wafers relatively poor (10%-20%); in addition, in order to improve the quality of microcrystalline silicon thin films and increase the coating rate, very high frequency power supplies are often used, which are expensive and have high costs, resulting in poor market competitiveness.

[0004] Therefore, it is urgent to design a new method for preparing microcrystalline silicon thin films that can overcome the above-mentioned defects. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to use the developed HoFCVD (Hot Filament Chemical Vapor Deposition) equipment to prepare a microcrystalline silicon film with a high crystallization rate at a low hydrogen dilution ratio. For example, at a hydrogen dilution ratio of 1:15, a microcrystalline silicon film with a crystallization rate of 95% can be prepared, and the process gas pressure can be controlled within 6Pa, and the intra-wafer / inter-wafer coating uniformity can be controlled within 5%. In addition, the HoFCVD equipment has a low cost and a fast coating rate, which can greatly reduce costs and increase production capacity, bringing strong market competitiveness.

[0006] In order to solve the above technical problems or achieve the above objectives, the present invention adopts the following technical solutions:

[0007] According to an aspect of the present invention, there is provided a method for preparing a microcrystalline silicon thin film, which is performed using a hot wire chemical vapor deposition device, comprising:

[0008] The glass slide is fixed on the carrier, and the textured silicon wafer is placed on the silicon wafer groove adjacent to the glass slide, and then the carrier is moved into the feeding chamber and vacuumized;

[0009] Moving the carrier plate in the feeding chamber into the heating chamber and heating the carrier plate to increase the temperature;

[0010] Move the carrier plate heated in the heating chamber to the uniform heating chamber and continue to heat the carrier plate slowly to ensure the temperature uniformity of the entire carrier plate;

[0011] The carrier plate heated in the uniform heating chamber is moved to the process chamber, and a thin film is deposited on the glass slide at a low hydrogen dilution ratio to obtain a microcrystalline silicon thin film sample.

[0012] In one embodiment of the present invention, the method further comprises:

[0013] The microcrystalline silicon thin film sample obtained in the process chamber is moved to the discharge chamber and the discharge chamber is subjected to vacuum breaking treatment to take out the microcrystalline silicon thin film sample;

[0014] Repeat the above steps to obtain microcrystalline silicon thin film samples at different hydrogen dilution ratios by changing the hydrogen dilution ratio in the process chamber.

[0015] In one embodiment of the present invention, the method further comprises:

[0016] Raman tests were performed on microcrystalline silicon thin film samples at different hydrogen dilution ratios;

[0017] The Raman test results were processed by peak separation to obtain the crystallization rates of microcrystalline silicon films under different hydrogen dilution ratios.

[0018] In one embodiment of the present invention, a temperature measuring sticker is attached to the back of the textured silicon wafer and then placed on a silicon wafer groove adjacent to a glass slide.

[0019] In one embodiment of the present invention, the carrier is heated to 120-130° C. in the heating chamber; and the carrier is further slowly heated to 150-160° C. in the uniform heating chamber.

[0020] In one embodiment of the present invention, the process conditions in the process chamber are: 0<vacuum pressure≤6Pa, hot wire current≥30A, and hydrogen dilution ratio is 1:6-1:20.

[0021] In one embodiment of the present invention, when the hydrogen dilution ratio in the process chamber is 1:15, the crystallization rate of the microcrystalline silicon film reaches 95%.

[0022] In one embodiment of the present invention, the diameter of the hot wire in the process chamber is 0.7 mm.

[0023] In one embodiment of the present invention, the highest temperature of the silicon wafer is also obtained when a thin film is deposited on a glass slide in the process chamber.

[0024] In one embodiment of the present invention, the film thickness of the obtained microcrystalline silicon thin film sample is 10-30 nm; the maximum temperature of the obtained silicon wafer is ≤200°C.

[0025] The technical solution provided by the present invention has the following advantages compared with the prior art:

[0026] The present invention uses HoFCVD equipment to prepare microcrystalline silicon thin films, and can prepare microcrystalline silicon thin films with high crystallization rates at a relatively low hydrogen dilution ratio. Due to the small amount of hydrogen passed through the present invention, a lower pressure can be controlled, the uniformity of the coating is ensured, and the cost is reduced. In addition, the gas utilization rate in the HoFCVD equipment is high, the coating rate is fast, and the production capacity can be effectively improved.

[0027] Since the silicon wafer used in the heterojunction process has a small heat capacity, the temperature will rise sharply when irradiated by the hot wire, causing the silicon wafer to overheat and damage the amorphous silicon film layer. Therefore, the present invention solves this problem by using, for example, a 0.7 mm ultra-thin hot wire. When the power per unit cross-sectional area of ​​the hot wire remains the same, the heat irradiated by the hot wire will be less. This can ensure that the decomposed active atomic groups have enough energy to migrate to form a film and form a high-quality microcrystalline silicon film, and can also prevent the silicon wafer from overheating due to irradiation by the hot wire. For example, the maximum temperature of the silicon wafer is ≤200°C. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0029] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the description of the embodiments or the prior art are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0030] Figure 1 A schematic flow chart of a method for preparing a microcrystalline silicon thin film provided in one embodiment of the present invention is shown;

[0031] Figure 2A partial schematic flow chart of a method for preparing a microcrystalline silicon thin film provided in another embodiment of the present invention is shown;

[0032] Figure 3 A partial schematic flow chart of a method for preparing a microcrystalline silicon thin film provided in another embodiment of the present invention is shown;

[0033] Figure 4 Schematic diagram of the cavity structure of the HoFCVD device used in the present invention is shown in FIG.

[0034] Among them, 1. Feeding chamber; 2. Heating chamber; 3. Heat uniforming chamber; 4. Process chamber; 5. Discharging chamber. DETAILED DESCRIPTION

[0035] In order to more clearly understand the above-mentioned objects, features and advantages of the present invention, the embodiments of the present invention will be further described below. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0036] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present invention, rather than all of the embodiments.

[0037] like Figure 1 As shown, the present invention provides a method for preparing a microcrystalline silicon thin film, which is carried out using a hot wire chemical vapor deposition device, and the method comprises the following steps:

[0038] S10: fixing the glass slide on the carrier, placing the textured silicon wafer on the silicon wafer groove adjacent to the glass slide, and then moving the carrier into the feed chamber and performing a vacuum treatment;

[0039] S11: moving the carrier in the feeding chamber into the heating chamber and heating the carrier;

[0040] S12: moving the carrier plate heated in the heating chamber to the uniform heating chamber and continuing to heat the carrier plate slowly to ensure the temperature uniformity of the entire carrier plate;

[0041] S13: Move the carrier plate heated in the uniform heating chamber to the process chamber, and deposit a thin film on the glass slide at a low hydrogen dilution ratio to obtain a microcrystalline silicon thin film sample.

[0042] Through the above method of the present invention, the present invention uses the HoFCVD device to prepare a microcrystalline silicon thin film, and can prepare a microcrystalline silicon thin film with a high crystallization rate at a lower hydrogen dilution ratio. Due to the small amount of hydrogen passed, the present invention can control a lower pressure, ensure the uniformity of the coating, and reduce the cost. In addition, the gas utilization rate in the HoFCVD device is high, the coating rate is fast, and the production capacity can be effectively improved.

[0043] In the above method, if Figure 2 As shown, the method further comprises the following steps:

[0044] S14: moving the microcrystalline silicon thin film sample obtained in the process chamber to the discharge chamber and breaking the vacuum of the discharge chamber to take out the microcrystalline silicon thin film sample;

[0045] S15: Repeat the above steps S10-S14 to obtain microcrystalline silicon thin film samples at different hydrogen dilution ratios by changing the hydrogen dilution ratio in the process chamber.

[0046] Through the above method, the present invention can use HoFCVD equipment to prepare microcrystalline silicon thin films under processes with different hydrogen dilution ratios.

[0047] In the above method, if Figure 3 As shown, the method further comprises the following steps:

[0048] S16: Performing Raman testing on microcrystalline silicon thin film samples at different hydrogen dilution ratios;

[0049] S17: performing peak separation processing on the Raman test results to obtain the crystallization rates of the microcrystalline silicon thin films under different hydrogen dilution ratios.

[0050] Through the above method, the present invention can measure the crystallization rate of the microcrystalline silicon film obtained under different hydrogen dilution ratios.

[0051] In the above method, in step S10: attach a temperature measuring sticker to the back of the textured silicon wafer and place it on the silicon wafer groove adjacent to the glass slide. Attaching a temperature measuring sticker to the back of the textured silicon wafer facilitates further obtaining the silicon wafer temperature when the microcrystalline silicon film is deposited in the process chamber.

[0052] In the above method, in steps S11 and S12, the carrier is heated to 120-130°C, preferably 120°C, in the heating chamber; and the carrier is slowly heated to 150-160°C, preferably 150°C, in the uniform heating chamber.

[0053] In the above method, in step S13, the process conditions in the process chamber are: 0<vacuum pressure≤6Pa, hot wire current≥30A, hydrogen dilution ratio is 1:6-1:20. Preferably, when the hydrogen dilution ratio in the process chamber is 1:15, the crystallization rate of the microcrystalline silicon film reaches 95%.

[0054] In the above method, in step S13, the diameter of the hot wire in the process chamber is 0.7 mm. Since the heat capacity of the silicon wafer used in the heterojunction process is small, the temperature will rise sharply when irradiated by the hot wire, causing the silicon wafer to overheat and damage the amorphous silicon film layer. Therefore, the present invention can solve this problem by using, for example, a 0.7 mm ultra-thin hot wire. When the power per unit cross-sectional area of ​​the hot wire remains the same, the heat irradiated by the thin wire will be less, which can ensure that the decomposed active atomic groups have enough energy to migrate to form a film and form a microcrystalline silicon film layer with better quality, and can also prevent the silicon wafer from being overheated due to the irradiation of the hot wire.

[0055] In the above method, in step S13, the highest temperature of the silicon wafer is also obtained when the thin film is deposited on the glass slide in the process chamber.

[0056] In the above method, preferably, the obtained microcrystalline silicon thin film sample has a film thickness of 10-30 nm; and the obtained silicon wafer has a maximum temperature of ≤200°C.

[0057] The above technical solution of the present invention is described in detail below through specific embodiments.

[0058] The present invention uses HoFCVD equipment to prepare microcrystalline silicon thin films, such as Figure 4 As shown, the chamber of the HoFCVD equipment includes a feed chamber 1, a heating chamber 2, a uniform heating chamber 3, a process chamber 4 and a discharge chamber 5. The feed chamber 1 and the discharge chamber 5 are responsible for completing the transition between vacuum and atmosphere. The heating chamber 2 heats the carrier quickly by high-power heating, and the uniform heating chamber 3 heats slowly to achieve the goal of uniform heating, which can ensure that the temperature uniformity of the carrier is controlled within ±5°C. The process chamber 4 is equipped with evenly arranged hot wires with a diameter of 0.7mm. When a large current is connected, the special gas introduced can be catalytically cracked to achieve the deposition of microcrystalline silicon thin film. Then, the crystallization rate of the microcrystalline silicon thin film is calculated by performing Raman testing and data processing on the microcrystalline silicon thin film sample.

[0059] Example 1

[0060] A method for preparing a microcrystalline silicon thin film, the specific steps are as follows:

[0061] Step 1: Fix the glass slide on the carrier of the HoFCVD equipment, attach a temperature measuring sticker to the back of a textured silicon wafer and place it on the silicon wafer slot near the glass slide, and move the carrier to the feed chamber through an automated device to evacuate the chamber to complete the transition between the atmosphere and vacuum.

[0062] Step 2: Move the carrier to the heating chamber through an automated device, and heat the carrier to 120°C through the heating chamber;

[0063] Step 3: Move the carrier to the uniform heating chamber through the automation device, and slowly heat the carrier to 150°C through the uniform heating chamber to ensure the temperature uniformity of the whole plate;

[0064] Step 4: Move the carrier to the process chamber through an automated device, set the process recipe, deposit a thin film on a glass slide, and obtain a microcrystalline silicon thin film sample. In the process recipe, the process gas pressure is 6Pa, the hot wire current is 30A with a diameter of 0.7mm, and the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) is 1:15. The film thickness of the obtained sample is 10nm; the maximum temperature of the silicon wafer is 200℃;

[0065] Step 5: Move the microcrystalline silicon thin film sample obtained in the process chamber to the discharge chamber and break the vacuum of the discharge chamber to take out the microcrystalline silicon thin film sample.

[0066] Example 2

[0067] This Example 2 is similar to Example 1, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:10.

[0068] Example 3

[0069] This Example 3 is similar to Example 1, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:8.

[0070] Example 4

[0071] This Example 4 is similar to Example 1, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:6.

[0072] Example 5

[0073] This Example 5 is similar to Example 1, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:18.

[0074] Example 6

[0075] This Example 6 is similar to Example 1, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:20.

[0076] Example 7

[0077] A method for preparing a microcrystalline silicon thin film, the specific steps are as follows:

[0078] Step 1: Fix the glass slide on the carrier of the HoFCVD equipment, attach a temperature measuring sticker to the back of a textured silicon wafer and place it on the silicon wafer slot near the glass slide, and move the carrier to the feed chamber through an automated device to evacuate the chamber to complete the transition between the atmosphere and vacuum.

[0079] Step 2: Move the carrier to the heating chamber through an automated device, and heat the carrier to 125°C through the heating chamber;

[0080] Step 3: Move the carrier to the uniform heating chamber through the automation device, and slowly heat the carrier to 155°C through the uniform heating chamber to ensure the temperature uniformity of the whole plate;

[0081] Step 4: Move the carrier to the process chamber through an automated device, set the process recipe, deposit a thin film on a glass slide, and obtain a microcrystalline silicon thin film sample. In the process recipe, the process gas pressure is 5Pa, the hot wire current is 40A with a diameter of 0.7mm, and the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) is 1:15; the film thickness of the sample is 15nm; and the maximum temperature of the silicon wafer is 150°C;

[0082] Step 5: Move the microcrystalline silicon thin film sample obtained in the process chamber to the discharge chamber and break the vacuum of the discharge chamber to take out the microcrystalline silicon thin film sample.

[0083] Example 8

[0084] This Example 8 is similar to Example 7, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:10.

[0085] Example 9

[0086] This Example 9 is similar to Example 7, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:20.

[0087] Example 10

[0088] A method for preparing a microcrystalline silicon thin film, the specific steps are as follows:

[0089] Step 1: Fix the glass slide on the carrier of the HoFCVD equipment, attach a temperature measuring sticker to the back of a textured silicon wafer and place it on the silicon wafer slot near the glass slide, and move the carrier to the feed chamber through an automated device to evacuate the chamber to complete the transition between the atmosphere and vacuum.

[0090] Step 2: Move the carrier to the heating chamber through an automated device, and heat the carrier to 130°C through the heating chamber;

[0091] Step 3: Move the carrier to the uniform heating chamber through the automation device, and slowly heat the carrier to 160°C through the uniform heating chamber to ensure the temperature uniformity of the whole plate;

[0092] Step 4: Move the carrier to the process chamber through an automated device, set the process recipe, deposit a thin film on a glass slide, and obtain a microcrystalline silicon thin film sample. In the process recipe, the process gas pressure is 4Pa, the hot wire current is 50A, and the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) is 1:15; the film thickness of the sample is 30nm; and the maximum temperature of the silicon wafer is 100°C;

[0093] Step 5: Move the microcrystalline silicon thin film sample obtained in the process chamber to the discharge chamber and break the vacuum of the discharge chamber to take out the microcrystalline silicon thin film sample.

[0094] Embodiment 11:

[0095] This Example 11 is similar to Example 10, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:10.

[0096] Embodiment 12:

[0097] This Example 12 is similar to Example 10, except that the hydrogen dilution ratio (silane flow rate: hydrogen flow rate) in the process formula is 1:20.

[0098] The microcrystalline silicon thin film samples taken out in the above embodiments 1-12 were subjected to Raman testing to obtain Raman testing results, and the Raman testing results were subjected to peak processing to obtain the crystallization rates of the samples under different hydrogen dilution ratios. The results are shown in Table 1 below.

[0099] Table 1: Process gas pressure, hydrogen dilution ratio and crystallization rate of microcrystalline silicon thin film samples in Examples 1-12

[0100] Example Process gas pressure (Pa) Hydrogen dilution ratio Crystallization rate 1 6 1:15 95％ 2 6 1:10 90％ 3 6 1:8 82％ 4 6 1:6 80％ 5 6 1:18 91％ 6 6 1:20 88％ 7 5 1:15 95％ 8 5 1:10 90％ 9 5 1:20 88％ 10 4 1:15 95％ 11 4 1:10 90％ 12 4 1:20 88％

[0101] It can be seen from Table 1 above that the present invention uses HoFCVD equipment to prepare microcrystalline silicon thin films, and can prepare microcrystalline silicon thin films with high crystallization rates at a relatively low hydrogen dilution ratio. For example, most preferably, when the hydrogen dilution ratio is 1:15, a microcrystalline silicon thin film with a crystallization rate of 95% can be prepared.

[0102] It can be seen that, through the above method of the present invention, the present invention uses the HoFCVD equipment to prepare a microcrystalline silicon thin film, and can prepare a microcrystalline silicon thin film with a high crystallization rate at a lower hydrogen dilution ratio. Due to the small amount of hydrogen passed, the present invention can control a lower pressure, for example, the process pressure is within 6Pa, which ensures the uniformity of the coating and reduces the cost.

[0103] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusions, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to the process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including a..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0104] The foregoing is merely an embodiment of the present invention, which enables those skilled in the art to understand and implement the present invention. Various modifications to the described embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments described herein, but rather to the widest scope consistent with the principles and features disclosed herein.

Claims

1. A method for preparing a microcrystalline silicon thin film, characterized in that: It is carried out using hot wire chemical vapor deposition equipment, including: The glass slide is fixed on the carrier, and the textured silicon wafer is placed on the silicon wafer groove adjacent to the glass slide, and then the carrier is moved into the feeding chamber and vacuumized; Moving the carrier plate in the feeding chamber into the heating chamber and heating the carrier plate to increase the temperature; Move the carrier plate heated in the heating chamber to the uniform heating chamber and continue to heat the carrier plate slowly to ensure the temperature uniformity of the entire carrier plate; The carrier plate heated in the uniform heating chamber is moved to the process chamber, and a thin film is deposited on the glass slide at a low hydrogen dilution ratio to obtain a microcrystalline silicon thin film sample.

2. The method according to claim 1, characterized in that Also includes: The microcrystalline silicon thin film sample obtained in the process chamber is moved to the discharge chamber and the discharge chamber is subjected to vacuum breaking treatment to take out the microcrystalline silicon thin film sample; Repeat the above steps to obtain microcrystalline silicon thin film samples at different hydrogen dilution ratios by changing the hydrogen dilution ratio in the process chamber.

3. The method according to claim 2, characterized in that Also includes: Raman tests were performed on microcrystalline silicon thin film samples at different hydrogen dilution ratios; The Raman test results were processed by peak separation to obtain the crystallization rates of microcrystalline silicon films under different hydrogen dilution ratios.

4. The method according to claim 1, characterized in that: Attach a temperature measuring sticker to the back of the textured silicon wafer and place it on the silicon wafer groove adjacent to the glass slide.

5. The method according to claim 1, characterized in that The carrier is heated to 120-130°C in the heating chamber; the carrier is further slowly heated to 150-160°C in the uniform heating chamber.

6. The method according to claim 3, characterized in that The process conditions in the process chamber are: 0<vacuum pressure≤6Pa, hot wire current≥30A, and hydrogen dilution ratio is 1:6-1:

20.

7. The method according to claim 6, characterized in that When the hydrogen dilution ratio in the process chamber is 1:15, the crystallization rate of the microcrystalline silicon film reaches 95%.

8. The method according to claim 1, characterized in that The diameter of the hot wire in the process chamber is 0.7 mm.

9. The method according to claim 1, characterized in that: The highest temperature of the silicon wafer is also obtained when depositing the thin film on the glass slide in the process chamber.

10. The method according to claim 9, characterized in that The film thickness of the obtained microcrystalline silicon thin film sample is 10-30nm; the maximum temperature of the obtained silicon wafer is ≤200℃.

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