Temperature and pressure sensor for monitoring state of power system

Abstract

The invention relates to the technical field of power system detection, and provides a temperature and pressure sensor for power system monitoring, which is made of a flexible material and comprises a first shielding layer, a temperature sensing layer, a protective layer, a pressure sensing layer and a second shielding layer which are arranged in sequence, first micro-channel structures are arranged in the first shielding layer and the second shielding layer, and first liquid metal is poured into the first micro-channel structures to form a shielding body; the temperature sensing layer can realize a temperature detection electrode; and the pressure sensing layer can realize pressure detection. According to the invention, the temperature and pressure dual-parameter detection function is integrated, the anti-electromagnetic interference capability is also realized, and the application in an electric power system is wider and more reliable. Especially in the state monitoring of an intelligent power grid, the measurement precision and the reliability of equipment can be improved, and a more powerful guarantee is provided for the stable operation of a power system.

Description

Technical Field

[0001] The present invention relates to the technical field of power system detection, and in particular to a temperature and pressure sensor for power system state monitoring. Background Art

[0002] As the power system develops towards intelligence, the demand for automatic and real-time monitoring of the system's operating status has increased significantly. By detecting key parameters such as temperature and pressure, the working status of key components in the power system, such as transformers and transmission cables, can be obtained, and fault detection can be performed to ensure the efficient operation of the power system. The temperature and pressure sensor is a sensor device that can measure two physical quantities, temperature and pressure, at the same time.

[0003] However, the temperature and pressure sensors in the prior art usually do not have an electromagnetic shielding function, and are difficult to work normally in a high electromagnetic interference environment, and cannot meet the working environment of a modern smart grid. Summary of the invention

[0004] The present invention provides a temperature and pressure sensor for power system status monitoring, which is used to solve the defect in the prior art that the reliability and life of the temperature and pressure sensors will be significantly reduced when they are exposed to a high electromagnetic interference environment for a long time. In the status monitoring of the smart grid, the measurement accuracy of the temperature and pressure sensors and the reliability of the equipment can be improved.

[0005] The present invention provides a temperature and pressure sensor for power system status monitoring, which is made of flexible material. The temperature and pressure sensor comprises a first shielding layer, a temperature sensing layer, a protective layer, a pressure sensing layer and a second shielding layer which are arranged in sequence; A first microchannel structure is disposed inside the first shielding layer and the second shielding layer, and a first liquid metal is poured inside the first microchannel structure to form a shielding body; A second microchannel structure is provided inside the temperature sensing layer, and a second liquid metal is poured inside the second microchannel structure to form a temperature detection electrode; A third microchannel structure is arranged inside the pressure sensing layer, and a third liquid metal is poured inside the third microchannel structure to form a pressure detection electrode.

[0006] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the temperature and pressure sensor is flat, and the total thickness of the temperature and pressure sensor is less than 2 mm.

[0007] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the length and width of the first microchannel structure, the second microchannel structure and the third microchannel structure are all greater than 5μm, and the first microchannel structure, the second microchannel structure and the third microchannel structure all include at least one inlet and outlet for perfusion.

[0008] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the first shielding layer, the temperature sensing layer, the protective layer, the pressure sensing layer and the second shielding layer are all made of silicone material.

[0009] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the first liquid metal includes a eutectic alloy or a single metal having a melting point lower than 300°C; the second liquid metal includes a eutectic alloy or a single metal having a melting point between 150°C and 300°C; the third liquid metal includes a eutectic alloy or a single metal having a melting point lower than 150°C.

[0010] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the first microchannel structure is configured as a grid structure, and the coverage area of ​​the first liquid metal is greater than 55% of the plane area of ​​the first shielding layer.

[0011] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the second microchannel structure has inlets and outlets at both ends, and the two inlets and outlets are measurement ports of resistance.

[0012] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the third microchannel structure includes two parallel channels, the two parallel channels are arranged in a zigzag shape, each of the two ends of the parallel channel has at least one inlet and outlet, there is a silicone layer between two adjacent parallel channels, the two parallel channels serve as electrodes, and the silicone layer serves as an internal medium to form a capacitor structure.

[0013] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the spacing between the two parallel flow channels is between 50 μm and 200 μm.

[0014] According to a temperature and pressure sensor for power system status monitoring provided by the present invention, the side of the protective layer facing the temperature sensing layer and the pressure sensing layer is flat, and the thickness of the protective layer is between 500 μm and 1000 μm.

[0015] The temperature and pressure sensor for power system status monitoring provided by the present invention is set as a flexible material, and a first shielding layer, a temperature sensing layer, a protective layer, a pressure sensing layer and a second shielding layer are arranged in sequence. The first shielding layer and the second shielding layer are both provided with a first microchannel structure, and the first microchannel structure is filled with a first liquid metal to form a shielding body. By utilizing the electromagnetic wave reflection characteristics of the first liquid metal, the shielding body can achieve electromagnetic field shielding for the temperature sensing layer and the pressure sensing layer; the temperature sensing layer is provided with a second microchannel structure, and the second microchannel structure is filled with a second liquid metal to form a temperature detection electrode, and the resistance value of the second liquid metal changes linearly with the temperature, and the temperature is obtained by measuring the resistance value of the second liquid metal resistor; the pressure sensing layer is provided with a third microchannel structure, and the third microchannel structure is filled with a third liquid metal to form a capacitive pressure detection electrode, thereby realizing pressure detection.

[0016] Therefore, the temperature and pressure sensor for power system status monitoring provided by the present invention not only integrates the dual parameter detection function of temperature and pressure, but also has the ability to resist electromagnetic interference, making its application in the power system more extensive and reliable. In particular, in the status monitoring of smart grids, the use of it helps to improve the measurement accuracy and the reliability of the equipment, providing a stronger guarantee for the stable operation of the power system. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a cross-sectional view of a temperature and pressure sensor for power system status monitoring provided by the present invention.

[0019] Figure 2 It is an exploded diagram of the temperature and pressure sensor for power system status monitoring provided by the present invention.

[0020] Figure 3 It is a structural schematic diagram of a temperature and pressure sensor for power system status monitoring provided by the present invention.

[0021] Figure 4 This is the first application example of the temperature and pressure sensor for power system status monitoring provided by the present invention.

[0022] Figure 5 This is the second application example of the temperature and pressure sensor for power system status monitoring provided by the present invention.

[0023] Reference numerals: 1. First shielding layer; 2. Temperature sensing layer; 3. Protective layer; 4. Pressure sensing layer; 5. Second shielding layer; 6. First microfluidic channel structure; 7. Second microfluidic channel structure; 8. Third microfluidic channel structure; 9. Inlet and outlet; 10. High-voltage cable; 11. Transformer. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In the description of the embodiments of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as limitations on the embodiments of the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0026] Combine the following Figure 1-Figure 5 The present invention describes a temperature and pressure sensor for power system status monitoring.

[0027] like Figure 1 As shown, an embodiment of the present invention provides a temperature and pressure sensor for power system status monitoring, which is made of flexible material. The temperature and pressure sensor includes a first shielding layer 1, a temperature sensing layer 2, a protective layer 3, a pressure sensing layer 4 and a second shielding layer 5 which are arranged in sequence, that is, the first shielding layer 1 and the second shielding layer 5 are located at the outermost sides of the temperature and pressure sensor; the temperature sensing layer 2 and the pressure sensing layer 4 are respectively located on the inner sides of the first shielding layer 1 and the second shielding layer 5, and the protective layer 3 is located in the middle of the temperature sensing layer 2 and the pressure sensing layer 4.

[0028] like Figure 1 , Figure 2 and Figure 3As shown, the first shielding layer 1 and the second shielding layer 5 are both provided with a first microchannel structure 6, and the first microchannel structure 6 is filled with a first liquid metal to form a shielding body. The principle of the shielding body is to utilize the high conductivity and electromagnetic wave reflectivity of the first liquid metal to effectively shield external electromagnetic interference, protect the internal temperature sensing layer 2 and the pressure sensing layer 4 from the influence of noise, and realize electromagnetic field shielding of the internal sensing layer, thereby improving the accuracy and stability of the sensor measurement data.

[0029] The temperature sensing layer 2 is provided with a second microchannel structure 7, and the second microchannel structure 7 is filled with a second liquid metal to form a temperature detection electrode. The temperature measurement principle is to use the resistance value of the second liquid metal to change linearly with the temperature, and the temperature is obtained by measuring the resistance value of a liquid metal resistor. There is a single liquid metal flow channel inside the temperature measurement layer. When the flow channel is filled with the second liquid metal, the metal therein constitutes a resistor, and the current temperature can be calculated by measuring the resistance value. The above structural setting enables the sensor to respond quickly to temperature changes and provide high-precision temperature readings. At the same time, the fluidity of the second liquid metal and the application of flexible materials give the sensor good flexibility and adaptability, enabling it to adapt to various complex shapes and dynamically changing monitoring environments.

[0030] A third microfluidic structure 8 is provided inside the pressure sensing layer 4, and a third liquid metal is poured inside the third microfluidic structure 8 to form a pressure detection electrode. There are two parallel liquid metal channels on the third microfluidic structure 8, and both liquid metal channels are arranged in a zigzag structure. There is a silicone layer in the middle of the two parallel channels. The two parallel channels serve as electrodes, and the silicone layer serves as an internal medium to form a capacitor structure. When pressure acts on the sensing layer, the microfluidic channel will deform, and the silicone layer in the middle of the electrode will also deform, thereby changing the capacitance value, realizing non-contact, high-precision measurement of pressure, which not only improves the sensitivity of pressure measurement, but also avoids the performance degradation problem of traditional mechanical pressure sensors due to long-term wear.

[0031] The temperature and pressure sensor for power system monitoring provided in the embodiment of the present invention can solve the shortcomings of sensors in the prior art in power system applications. It not only integrates the dual parameter monitoring functions of temperature and pressure, but also has anti-electromagnetic interference capabilities, making its application in power systems more extensive and reliable, especially in the status monitoring of smart grids, which helps to improve the measurement accuracy and equipment reliability, and provides a stronger guarantee for the stable operation of the power system.

[0032] In a feasible embodiment of the present invention, the temperature and pressure sensor is flat, and the total thickness of the temperature and pressure sensor is less than 2 mm. Through the above structural setting, the temperature and pressure sensor is more compact and lightweight in physical size. Such a size advantage makes it easier to integrate the sensor into various small spaces or complex equipment structures without significantly increasing the additional volume or weight. Moreover, due to the small size and light weight of the temperature and pressure sensor, the installation process becomes simpler and faster. The staff can more easily fit the sensor to the location that needs to be monitored without complicated adjustments or modifications.

[0033] In a feasible embodiment of the present invention, the length and width of the first microfluidic channel structure 6, the second microfluidic channel structure 7 and the third microfluidic channel structure 8 are all greater than 5 μm. The microfluidic channel size greater than 5 μm ensures that the liquid metal can flow smoothly, while providing sufficient space to accommodate the liquid metal and achieve a stable sensing function. The first microfluidic channel structure 6, the second microfluidic channel structure 7 and the third microfluidic channel structure 8 each include at least one inlet and outlet 9 for perfusion. The liquid metal is injected into the microfluidic channel through the inlet and outlet 9 through specific process steps. At the same time, the inlet and outlet 9 can also be used as a channel for subsequent maintenance and replacement of the liquid metal, thereby improving the maintainability and scalability of the sensor.

[0034] In a feasible embodiment of the present invention, the first shielding layer 1, the temperature sensing layer 2, the protective layer 3, the pressure sensing layer 4 and the second shielding layer 5 are all made of silicone material, which has excellent flexibility and ductility, so the temperature and pressure sensor can easily adapt to various complex curved surfaces and dynamically changing monitoring environments. Whether it is bent, twisted or stretched, the silicone sensor can maintain the integrity of its structure and function, ensuring the accuracy and reliability of the monitoring data.

[0035] Furthermore, the first shielding layer 1 , the temperature sensing layer 2 , the protective layer 3 , the pressure sensing layer 4 and the second shielding layer 5 may be made of polydimethylsiloxane (PDMS), Eco-flex (elastomeric compound), human silicone and the like.

[0036] In a feasible embodiment of the present invention, the first liquid metal includes a eutectic alloy or a single metal having a melting point below 300°C, including metal gallium, gallium-based eutectic alloys, metal bismuth, bismuth-based eutectic alloys, etc. The second liquid metal includes a eutectic alloy or a single metal having a melting point between 150°C and 300°C, including metal bismuth, bismuth-based eutectic alloys, etc. The third liquid metal includes a eutectic alloy or a single metal having a melting point below 150°C, including metal gallium and gallium-based eutectic alloys.

[0037] In a feasible embodiment of the present invention, the first microfluidic channel structure 6 is set to a grid structure, a zigzag structure or a plane structure, etc. Among them, the grid structure has excellent fluid distribution performance and heat dissipation performance, which can ensure the uniform flow and effective heat dissipation of liquid metal in the first microfluidic channel structure 6. The zigzag structure increases the effective contact area between the fluid and the sensing layer by changing the flow path of the liquid metal, thereby improving the sensing performance. This structure is suitable for sensors with special requirements for the fluid flow path. The planar structure is relatively simple, easy to manufacture and integrate, and is suitable for scenes with additional requirements for the sensor structure and manufacturing process. The area range of the first liquid metal should at least completely cover the effective sensing area of ​​the sensing layer, and within this area, the coverage area of ​​the first liquid metal is greater than 55% of the plane area of ​​the first shielding layer 1, which can achieve a better shielding effect.

[0038] In a feasible embodiment of the present invention, the second microchannel structure 7 has an inlet and outlet 9 at both ends, and the two inlets and outlets 9 are measuring ports of resistance. The two inlets and outlets 9 not only serve as channels for liquid metal to enter and exit the microchannel, but more importantly, they are used as measuring ports of resistance. That is, when liquid metal flows through the microchannel, the state or temperature of the liquid metal and other parameters can be monitored by measuring the resistance value between the two ports. In addition, in order to ensure the accuracy and reliability of resistance measurement, the two inlets and outlets 9 should maintain a high degree of consistency and symmetry in structure and size. This can reduce the measurement error caused by structural differences and improve the accuracy and stability of the sensor.

[0039] In a feasible embodiment of the present invention, the third microfluidic channel structure 8 includes two parallel channels, both of which are arranged in a zigzag shape, each of which has at least one inlet and outlet 9 at both ends, and there is a silicone layer between two adjacent parallel channels. The two parallel channels serve as electrodes, and the silicone layer serves as an internal medium to form a capacitor structure. When pressure acts on the pressure sensing layer, the third microfluidic channel structure 8 will deform, and the silicone layer in the middle of the electrode will also deform, resulting in a change in the capacitance value.

[0040] In a feasible embodiment of the present invention, the distance between the two parallel flow channels is between 50 μm and 200 μm.

[0041] In a feasible embodiment of the present invention, the side of the protective layer 3 facing the temperature sensing layer 2 and the pressure sensing layer 4 is flat, and the thickness of the protective layer is between 500 μm and 1000 μm, which can ensure the shielding effect while taking into account the feasibility and economy of manufacturing. The function of the protective layer is to reduce the influence of pressure on the temperature layer.

[0042] like Figure 4As shown, the embodiment of the present invention is applied to detect high-voltage cables 10 and connectors. When in use, the temperature and pressure sensors provided by the embodiment of the present invention have good flexibility, so they can be rotated and wrapped around the outside of the high-voltage cable 10 as shown in the figure to completely wrap the high-voltage cable 10 or the connector to fully detect the status of the high-voltage cable 10 or the connector. By detecting the temperature and pressure of the high-voltage cable 10 and the connector, it can be determined whether the cable has poor contact, insulation aging, or damage or leakage of the cable insulation layer. Not only can the fault location of the cable be quickly found, but also the potential fault points of the cable can be discovered in advance for preventive maintenance.

[0043] like Figure 5 As shown, an embodiment of the present invention is used to detect the internal state of the transformer 11. When in use, the temperature and pressure sensor provided by the embodiment of the present invention has a maximum thickness of only 2 mm, so it can be attached to the inner wall of the transformer 11 as shown in the figure to achieve optimal monitoring of the working state of the transformer 11. By monitoring the temperature and pressure inside the transformer 11, problems in the use of the power transformer can be determined, overheating of the transformer can be avoided, or maintenance of potential faults can be performed.

[0044] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0045] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "mode", "specific mode", or "some modes" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or mode are included in at least one embodiment or mode of the embodiment of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or mode. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or modes in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or modes described in this specification and the features of the different embodiments or modes, without contradiction.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A temperature and pressure sensor for power system status monitoring, characterized in that: The temperature and pressure sensor comprises a first shielding layer (1), a temperature sensing layer (2), a protective layer (3), a pressure sensing layer (4) and a second shielding layer (5) which are arranged in sequence; A first microchannel structure (6) is disposed inside the first shielding layer (1) and the second shielding layer (5), and a first liquid metal is poured into the first microchannel structure (6) to form a shielding body; A second microchannel structure (7) is provided inside the temperature sensing layer (2), and a second liquid metal is poured inside the second microchannel structure (7) to form a temperature detection electrode; A third microchannel structure (8) is arranged inside the pressure sensing layer (4), and a third liquid metal is poured into the interior of the third microchannel structure (8) to form a pressure detection electrode.

2. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The temperature and pressure sensor is flat, and the total thickness of the temperature and pressure sensor is less than 2 mm.

3. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The length and width of the first microfluidic channel structure (6), the second microfluidic channel structure (7) and the third microfluidic channel structure (8) are all greater than 5 μm, and the first microfluidic channel structure (6), the second microfluidic channel structure (7) and the third microfluidic channel structure (8) each include at least one inlet and outlet for perfusion.

4. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The first shielding layer (1), the temperature sensing layer (2), the protective layer (3), the pressure sensing layer (4) and the second shielding layer (5) are all made of silicone material.

5. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The first liquid metal includes a eutectic alloy or a single metal having a melting point below 300°C; the second liquid metal includes a eutectic alloy or a single metal having a melting point between 150°C and 300°C; the third liquid metal includes a eutectic alloy or a single metal having a melting point below 150°C.

6. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The first microchannel structure (6) is configured as a grid structure, and the coverage area of ​​the first liquid metal is greater than 55% of the plane area of ​​the first shielding layer (1).

7. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The second microchannel structure (7) has an inlet and an outlet (9) at both ends, respectively, and the two inlets and outlets (9) are measurement ports for resistance.

8. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The third microchannel structure (8) comprises two parallel channels, the two parallel channels are arranged in a zigzag shape, each of the two parallel channels has at least one inlet and outlet (9) at each end, a silicone layer is present between two adjacent parallel channels, the two parallel channels serve as electrodes, and the silicone layer serves as an internal medium, forming a capacitor structure.

9. The temperature and pressure sensor for power system status monitoring according to claim 8, characterized in that: The distance between the two parallel flow channels is between 50 μm and 200 μm.

10. The temperature and pressure sensor for power system status monitoring according to claim 1, characterized in that: The side of the protective layer (3) facing the temperature sensing layer (2) and the pressure sensing layer (4) is a plane, and the thickness of the protective layer is between 500 μm and 1000 μm.

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