Thermal coupling IGBT static real-time model modeling method and related device

Abstract

The invention discloses a thermal coupling IGBT static real-time model modeling method and a related device, and the method comprises the steps: carrying out the modeling of an electrical characteristic part of an IGBT according to an equipment data table of the IGBT, and the electrical characteristic part comprises an electrical element and power loss; according to the equipment data table and in combination with a power loss thermal resistance circuit, modeling is carried out on the electric heating characteristic part of the IGBT, and the power loss thermal resistance circuit comprises an in-module series thermal resistor, a thermal conductive adhesive thermal resistor, a radiator thermal resistor and an environment temperature voltage bias; an interaction portion of the electrical characteristic portion and the electrothermal characteristic portion is modeled. According to the method, thermal coupling refined modeling of the IGBT is realized, and the calculation efficiency can achieve a real-time effect, so that the requirements of behavior-level modeling and real-time simulation can be met in the absence of semiconductor physical parameters, and the hardware-in-the-loop test requirements of normal working on-state and closed-state power consumption requirements are met.

Description

Technical Field

[0001] The present application relates to the field of power electronics technology, and in particular to a thermally coupled IGBT static real-time modeling method and related devices. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor), whose full Chinese name is insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar junction transistor) and MOS (insulated gate field effect transistor).

[0003] The construction of IGBT model involves the interaction of multiple physical fields such as electricity, magnetism, heat, and force. Multi-physics modeling and analysis are important tools for studying its thermal management, electromagnetic compatibility, and mechanical fatigue. The following circuit models are used in traditional IGBT circuit simulation: 1) analytical model; 2) behavioral model; 3) numerical model; 4) hybrid model. Generally speaking, behavioral models have the best real-time performance and require the least computing resources, while other models consume a lot of resources and execution time. The behavioral model can achieve rapid modeling and real-time simulation at the device level only through the device data sheet. However, analytical models, numerical models, and hybrid models require specific dimensions and manufacturing descriptions to extract dedicated physical parameters. Generally speaking, the device data sheet does not provide such detailed manufacturer design specifications, which makes the modeling of general devices very difficult. Therefore, it is a feasible and recommended modeling solution to select a behavioral model with acceptable accuracy and low computing resource consumption for rapid modeling and real-time simulation of IGBT. However, for ordinary users, they can only get the data sheet of IGBT devices provided by the manufacturer. The data sheet does not provide very specific data such as specific material parameters and doping concentration, which makes it very difficult for users to use multi-physics modeling tools. Obviously, the existing technology cannot achieve behavioral-level modeling and real-time simulation requirements in the absence of semiconductor physical parameters. Summary of the invention

[0004] The present application provides a thermally coupled IGBT static real-time modeling method and related devices, which are used to meet the behavioral level modeling and real-time simulation requirements in the absence of semiconductor physical parameters, and realize the hardware-in-the-loop testing requirements of normal operating on-state and off-state power consumption requirements.

[0005] In view of this, the first aspect of the present application provides a method for modeling a thermally coupled IGBT static real-time model, the method comprising:

[0006] Modeling the electrical characteristics of the IGBT according to the device data sheet of the IGBT, wherein the electrical characteristics include: electrical components and power loss;

[0007] Modeling the electrothermal characteristics of the IGBT based on the device data sheet and in combination with a power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: a series thermal resistance within the module, a thermal resistance of a thermal conductive adhesive, a thermal resistance of a heat sink, and an ambient temperature voltage bias;

[0008] The interaction part between the electrical characteristic part and the electrothermal characteristic part is modeled.

[0009] Optionally, modeling the electrical characteristics of the IGBT according to the device data sheet of the IGBT includes:

[0010] Based on the temperature curve in the IGBT device data sheet, a linear fitting method is used to obtain the static curve of the current temperature for electrical component modeling;

[0011] The chart data in the device data sheet is analyzed to obtain switching loss modeling, and the conduction loss is obtained through Joule's law for power loss modeling.

[0012] Optionally, modeling the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with a power loss thermal resistance circuit includes:

[0013] The capacitance pair parameters of the series thermal resistance in the module are obtained through the device data sheet, the parameters of the thermal resistance of the thermal conductive glue and the thermal resistance of the heat sink are set according to the model of the IGBT, the ambient temperature voltage bias is set to the ambient room temperature, and combined with the power loss, it is used to model the electrothermal characteristics of the IGBT.

[0014] Optionally, modeling the interaction between the electrical characteristic part and the electrothermal characteristic part includes:

[0015] The electrical properties in the electrical part within the step are updated according to the electrothermal properties in the electrothermal characteristic part, so as to model the interaction part between the electrical characteristic part and the electrothermal characteristic.

[0016] A second aspect of the present application provides a thermally coupled IGBT static real-time modeling system, the system comprising:

[0017] A first modeling unit is used to model the electrical characteristic part of the IGBT according to the device data sheet of the IGBT, wherein the electrical characteristic part includes: electrical components and power loss;

[0018] A second modeling unit is used to model the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with a power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: a series thermal resistance in the module, a thermal resistance of a thermal conductive glue, a thermal resistance of a heat sink, and an ambient temperature voltage bias;

[0019] The third modeling unit is used to model the interaction part between the electrical characteristic part and the electrothermal characteristic part.

[0020] Optionally, the first modeling unit is specifically configured to:

[0021] Based on the temperature curve in the IGBT device data sheet, a linear fitting method is used to obtain the static curve of the current temperature for electrical component modeling;

[0022] The chart data in the device data sheet is analyzed to obtain switching loss modeling, and the conduction loss is obtained through Joule's law for power loss modeling.

[0023] Optionally, the second modeling unit is specifically used to:

[0024] The capacitance pair parameters of the series thermal resistance in the module are obtained through the device data sheet, the parameters of the thermal resistance of the thermal conductive glue and the thermal resistance of the heat sink are set according to the model of the IGBT, the ambient temperature voltage bias is set to the ambient room temperature, and combined with the power loss, it is used to model the electrothermal characteristics of the IGBT.

[0025] Optionally, the third modeling unit is specifically used to:

[0026] The electrical properties in the electrical part within the step are updated according to the electrothermal properties in the electrothermal characteristic part, so as to model the interaction part between the electrical characteristic part and the electrothermal characteristic.

[0027] A third aspect of the present application provides a thermally coupled IGBT static real-time modeling device, the device comprising a processor and a memory:

[0028] The memory is used to store program code and transmit the program code to the processor;

[0029] The processor is used to execute the steps of the thermally coupled IGBT static real-time modeling method as described in the first aspect according to the instructions in the program code.

[0030] A fourth aspect of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium is used to store program code, and the program code is used to execute the thermally coupled IGBT static real-time modeling method described in the first aspect above.

[0031] It can be seen from the above technical solutions that this application has the following advantages:

[0032] The present application provides a method for modeling a thermally coupled IGBT static real-time model. According to the device data sheet, the electrical characteristics part and the electrothermal characteristics part are modeled respectively, and the interactive part of the two is modeled, that is, the modeling is performed using a two-stage linearization method, which greatly reduces the time-consuming problem of nonlinear iteration, as well as its algorithm for predicting other operating temperatures. Further, the electrical properties of the IGBT device are updated using the temperature variability of the electrical properties. The method of the present application realizes the refined modeling of the thermal coupling of the IGBT, and can achieve real-time computing efficiency. It can be connected to the hardware-in-the-loop test to evaluate the safety and adequacy of the power system and its control system, thereby solving the problem of being able to meet the behavioral modeling and real-time simulation requirements in the absence of semiconductor physical parameters, and realizing the hardware-in-the-loop test requirements of normal working on-state and closed-state power consumption requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic flow chart of a method for modeling a thermally coupled IGBT static real-time model provided in an embodiment of the present application;

[0034] Figure 2 It is a static characteristic curve of the same IGBT at different temperatures provided in the embodiment of the present application;

[0035] Figure 3 The chart data in the device data table provided in the embodiments of the present application;

[0036] Figure 4 A power loss thermal resistance circuit diagram provided in an embodiment of the present application;

[0037] Figure 5 The parameters of the series resistance and capacitance pairs in the module provided in the device data sheet provided in the embodiments of the present application;

[0038] Figure 6 A schematic diagram of the interaction between the electrical characteristics part and the electrothermal characteristics part provided in the embodiments of the present application;

[0039] Figure 7 It is a structural schematic diagram of a thermally coupled IGBT static real-time modeling system provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] See also Figure 1 , a thermally coupled IGBT static real-time modeling method provided in an embodiment of the present application includes:

[0042] Step 101 : Model the electrical characteristics of the IGBT according to the device data sheet of the IGBT, where the electrical characteristics include electrical components and power loss.

[0043] In one embodiment, step 101 includes: based on the temperature curve in the device data sheet of the IGBT, a static curve of the current temperature is obtained by linear fitting for electrical component modeling; the chart data in the device data sheet is analyzed to obtain switching loss modeling, and the conduction loss is obtained by Joule's law for power loss modeling.

[0044] It should be noted that step 101 is that the modeling description of the electrical characteristics includes the modeling description of equivalent electrical components and the modeling of IGBT switching losses.

[0045] Electrical components: such as Figure 2 As shown in the figure, the static characteristic curve of the same IGBT at different temperatures can be roughly divided into two sections, the low current section and the high current section, with the 60% nominal current point as the boundary. It can be seen that the linearization degree is high for points greater than 60%, and the linearization degree is slightly lower for points less than 60%. If most of the normal operating points are less than 60%, it means that the device selection current parameter is too large, so under normal circumstances, it should all work in the linear area greater than 60%. The slope of the linear fitting area is the conductivity value of the current working area. The static characteristic curve of other temperatures can be obtained by linear fitting when working at temperatures between 25°C and 125°C. If there are temperature curves in multiple device data sheets, the static characteristic curve of the current temperature can be obtained by linear fitting.

[0046] Power loss: Switching loss modeling is based on the data in the device data sheet, such as Figure 3 As shown, the current switching loss can be queried each time the switch is turned on and off, and the superposition provides interactive data for the power loss of the electrothermal characteristics. In addition to the switching loss, the power loss also includes the conduction loss, which can be calculated by Joule's law: P = I 2 R gives the conduction loss.

[0047] Step 102: Model the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with the power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: the series thermal resistance in the module, the thermal resistance of the thermal conductive glue, the thermal resistance of the heat sink and the ambient temperature voltage bias.

[0048] In one embodiment, step 102 includes: obtaining capacitor pair parameters of series thermal resistance in the module through a device data sheet, setting parameters of thermal resistance of thermal conductive adhesive and thermal resistance of heat sink according to the model of IGBT, setting the ambient temperature voltage bias to ambient room temperature, and combining power loss for modeling the electrothermal characteristics of the IGBT.

[0049] It should be noted that for step 102, Figure 4 As shown, it is a power loss thermal resistance circuit diagram, which includes the series thermal resistance in the module, the thermal resistance of the thermal conductive glue, the thermal resistance of the heat sink and the ambient temperature voltage bias. The power loss is the sum of the turn-on and turn-off loss and the conduction loss of the IGBT, and this parameter can be obtained by modeling in step 101. Among them, the series thermal resistance in the module in the power loss thermal resistance circuit is provided by the parameters of different series resistors and capacitors in the device data sheet, the parameters of the thermal conductive glue and the heat sink are filled in the circuit according to the model selected by yourself, and the ambient temperature voltage bias is the ambient room temperature. Figure 5 The parameters of the series resistance and capacitance pair in the module provided in the device data sheet: the power loss includes switching loss and conduction loss. The switching loss is the loss at the moment when the device is turned on and off. The current loss of turning on or off can be obtained from the device data sheet and accumulated into the current power loss. The conduction loss is the loss of the device in the on-state after it is turned on. The on-state loss within the current step can be obtained through Joule's law and accumulated into the current power loss.

[0050] Step 103: Model the interaction between the electrical characteristic part and the electrothermal characteristic part.

[0051] In one embodiment, step 103 includes: updating the electrical properties in the electrical part within the step length according to the electrothermal properties in the electrothermal characteristic part, so as to model the interaction part between the electrical characteristic part and the electrothermal characteristic part.

[0052] It should be noted that for step 103, Figure 6 As shown in the figure, the temperature at the junction of the module and the thermal conductive adhesive is calculated through the power loss thermal resistance circuit as the characteristic temperature of the static characteristics of the device. According to the temperature under this electrothermal characteristic, the static curve corresponding to the characteristic temperature at this temperature is obtained.

[0053] , thereby updating the static characteristic curve of the current temperature of the electrical properties within this step and the switching power loss, where the power loss is also a curve with temperature characteristics. The electrical characteristics and electrothermal characteristics affect each other, and the step requirements of the electrothermal characteristics can be adjusted to tens of microseconds and hundreds of microseconds. The parameters of the electrical characteristics do not change within the electrothermal characteristic step, and the new electrical characteristics are updated after the next step calculation of the electrothermal characteristics.

[0054] It should be noted that the calculation step size of the electrical characteristic change can be in the micro-nanosecond level, and the calculation of the electrothermal characteristic circuit can be expanded to about 100 times the electrical characteristic step size to maintain its high calculation accuracy. In other words, the electrical characteristic circuit runs 100 steps and then the accumulated data interacts with the electrothermal characteristic circuit once.

[0055] The present application provides a method for modeling a thermally coupled IGBT static real-time model. The modeling is performed using a two-stage linearization method according to the device data sheet, which greatly reduces the time-consuming problem of nonlinear iteration, as well as its algorithm for predicting other operating temperatures. In addition, by utilizing the temperature variability of the electrical properties of the IGBT device, the node voltage is solved as the thermal resistance circuit is used to obtain the updated electrical properties of the device at the temperature, including static characteristics and power loss (switching and conduction), etc. In turn, the electrical properties affect parameters such as electrothermal properties. The method of the present application can achieve refined modeling of the thermal coupling of the IGBT, and can also achieve real-time computing efficiency. It can be connected to hardware-in-the-loop testing to evaluate the safety and adequacy of the power system and its control system, thereby solving the problem of being able to meet the behavioral modeling and real-time simulation requirements in the absence of semiconductor physical parameters, and achieving the hardware-in-the-loop testing requirements for normal working on-state and closed-state power consumption requirements.

[0056] The above is a thermally coupled IGBT static real-time modeling method provided in an embodiment of the present application, and the following is a thermally coupled IGBT static real-time modeling system provided in an embodiment of the present application.

[0057] See also Figure 7 , a thermally coupled IGBT static real-time modeling system provided in an embodiment of the present application includes:

[0058] The first modeling unit 201 is used to model the electrical characteristic part of the IGBT according to the device data sheet of the IGBT, where the electrical characteristic part includes: electrical components and power loss.

[0059] The second modeling unit 202 is used to model the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with the power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: the series thermal resistance in the module, the thermal resistance of the thermal conductive glue, the thermal resistance of the heat sink and the ambient temperature voltage bias.

[0060] The third modeling unit 203 is used to model the interaction between the electrical characteristic part and the electrothermal characteristic part.

[0061] Furthermore, in an embodiment of the present application, a thermally coupled IGBT static real-time modeling device is provided, the device comprising a processor and a memory:

[0062] The memory is used to store program code and transmit the program code to the processor;

[0063] The processor is used to execute the steps of the thermally coupled IGBT static real-time modeling method as described in the above method embodiment according to the instructions in the program code.

[0064] Furthermore, a computer-readable storage medium is provided in an embodiment of the present application, and the computer-readable storage medium is used to store program code, and the program code is used to execute the thermally coupled IGBT static real-time modeling method described in the above method embodiment.

[0065] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0066] The terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0067] It should be understood that in this application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0068] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0069] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0070] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0071] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (full name in English: Read-Only Memory, English abbreviation: ROM), random access memory (full name in English: Random Access Memory, English abbreviation: RAM), disk or optical disk and other media that can store program codes.

[0072] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for modeling a thermally coupled IGBT static real-time model, characterized in that: include: Modeling the electrical characteristics of the IGBT according to the device data sheet of the IGBT, wherein the electrical characteristics include: electrical components and power loss; Modeling the electrothermal characteristics of the IGBT based on the device data sheet and in combination with a power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: a series thermal resistance within the module, a thermal resistance of a thermal conductive adhesive, a thermal resistance of a heat sink, and an ambient temperature voltage bias; The interaction part between the electrical characteristic part and the electrothermal characteristic part is modeled.

2. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that: According to the device data sheet of the IGBT, the electrical characteristics of the IGBT are modeled, including: Based on the temperature curve in the IGBT device data sheet, a linear fitting method is used to obtain the static curve of the current temperature for electrical component modeling; The chart data in the device data sheet is analyzed to obtain switching loss modeling, and the conduction loss is obtained through Joule's law for power loss modeling.

3. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that: The modeling of the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with the power loss thermal resistance circuit includes: The capacitance pair parameters of the series thermal resistance in the module are obtained through the device data sheet, the parameters of the thermal resistance of the thermal conductive glue and the thermal resistance of the heat sink are set according to the model of the IGBT, the ambient temperature voltage bias is set to the ambient room temperature, and the electrothermal characteristics of the IGBT are modeled in combination with the power loss.

4. The method for modeling a thermally coupled IGBT static real-time model according to claim 1, characterized in that: Modeling the interaction between the electrical characteristic part and the electrothermal characteristic part includes: The electrical properties in the electrical part within the step are updated according to the electrothermal properties in the electrothermal characteristic part, so as to model the interaction part between the electrical characteristic part and the electrothermal characteristic.

5. A thermally coupled IGBT static real-time modeling system, characterized in that: include: A first modeling unit is used to model the electrical characteristic part of the IGBT according to the device data sheet of the IGBT, wherein the electrical characteristic part includes: electrical components and power loss; A second modeling unit is used to model the electrothermal characteristic part of the IGBT according to the device data sheet and in combination with a power loss thermal resistance circuit, wherein the power loss thermal resistance circuit includes: a series thermal resistance in the module, a thermal resistance of a thermal conductive glue, a thermal resistance of a heat sink, and an ambient temperature voltage bias; The third modeling unit is used to model the interaction part between the electrical characteristic part and the electrothermal characteristic part.

6. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that: The first modeling unit is specifically used for: Based on the temperature curve in the IGBT device data sheet, a linear fitting method is used to obtain the static curve of the current temperature for electrical component modeling; The chart data in the device data sheet is analyzed to obtain switching loss modeling, and the conduction loss is obtained through Joule's law for power loss modeling.

7. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that: The second modeling unit is specifically used for: The capacitance pair parameters of the series thermal resistance in the module are obtained through the device data sheet, the parameters of the thermal resistance of the thermal conductive glue and the thermal resistance of the heat sink are set according to the model of the IGBT, the ambient temperature voltage bias is set to the ambient room temperature, and combined with the power loss, it is used to model the electrothermal characteristics of the IGBT.

8. The thermally coupled IGBT static real-time modeling system according to claim 5, characterized in that: The third modeling unit is specifically used for: The electrical properties in the electrical part within the step are updated according to the electrothermal properties in the electrothermal characteristic part, so as to model the interaction part between the electrical characteristic part and the electrothermal characteristic.

9. A thermally coupled IGBT static real-time modeling device, characterized in that: The device comprises a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the thermally coupled IGBT static real-time modeling method according to any one of claims 1 to 4 according to the instructions in the program code.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium is used to store program codes, and the program codes are used to execute the thermally coupled IGBT static real-time modeling method according to any one of claims 1 to 4.

Images