Light emitting diode and light emitting device

Abstract

The invention relates to the related technical field of semiconductors, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises a substrate, a plurality of light-emitting units are arranged on the upper surface of the substrate, each light-emitting unit comprises a first light-emitting unit and a second light-emitting unit which are adjacent to each other, and the first light-emitting units and the second light-emitting units each comprise an epitaxial structure; the epitaxial structure sequentially comprises a first semiconductor layer, an active layer and a second semiconductor layer from top to bottom; the first semiconductor layer is provided with a first table top, the second semiconductor layer is provided with an upper surface, and the part, not covered by the first semiconductor layer and the active layer, of the upper surface is a second table top; the first light-emitting unit comprises a second port, and the second light-emitting unit comprises a first port; the bridging electrodes are connected with the first light emitting units and the second light emitting units, the bridging electrodes are connected with the adjacent first ports and second ports in the Y direction, penetrate through the first table facet in the X direction and cover part of the second table facet, and through the arrangement, the reliability of the light emitting diode can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor-related technologies, and in particular to a light emitting diode and a light emitting device. Background Art

[0002] Light-emitting diodes, also known as LEDs, are currently widely used in lighting and display fields.

[0003] A high voltage light emitting diode is a special type of light emitting diode, which uses isolation paths to divide the epitaxial structure into a number of light emitting units, and then uses bridge electrodes to connect adjacent light emitting units.

[0004] In the current process, the bridging electrode is usually connected in series in a single direction, that is, the direction in which the adjacent light-emitting units are arranged. However, during the process of die bonding and use of the light-emitting diode, it is easy to cause damage to the metal surface of the bridging electrode, thereby causing short circuit failure and seriously affecting the reliability of the high-voltage light-emitting diode. Therefore, how to improve the reliability of the high-voltage light-emitting diode has become an urgent problem to be solved. Summary of the invention

[0005] The present application provides a light emitting diode and a light emitting device to solve at least one of the above problems.

[0006] In a first aspect, the present invention provides a light emitting diode, comprising: A substrate including an upper surface; A plurality of light-emitting units are arranged on the upper surface of the substrate, the light-emitting units include adjacent first light-emitting units and second light-emitting units, an isolation path is provided between the first light-emitting units and the second light-emitting units, the arrangement direction from the first light-emitting units to the second light-emitting units is the Y direction, and the direction perpendicular to the Y direction is the X direction; The first light-emitting unit and the second light-emitting unit both contain an epitaxial structure, and the epitaxial structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer from top to bottom; The first semiconductor layer has an upper surface, which is a first mesa; the second semiconductor layer has an upper surface, and a portion of the upper surface not covered by the first semiconductor layer and the active layer is a second mesa; The first light emitting unit further comprises a first electrode disposed on the first table surface, and a second port disposed on the second table surface; The second light emitting unit further comprises a second electrode disposed on the second mesa, and a first port disposed on the first mesa; A bridging electrode connecting the first light-emitting unit and the second light-emitting unit, wherein the bridging electrode connects adjacent first ports and second ports along the Y direction. In the second light-emitting unit, the bridging electrode passes through the first mesa along the X direction and covers a portion of the second mesa, and the portion covering the second mesa is the bridging electrode extension portion.

[0007] In a second aspect, the present invention further provides a light-emitting device, comprising the above-mentioned light-emitting diode.

[0008] The light emitting diode provided by the present invention has a bridging electrode, which not only electrically connects the first and second light emitting units in the Y direction (the arrangement direction of the first light emitting unit to the second light emitting unit), but also passes through the first table surface of the second light emitting unit in the X direction (the direction perpendicular to the Y direction) and covers part of the second table surface. Therefore, the bridging electrode is equivalent to having two current paths on the second light emitting unit, one of which can connect to the first light emitting unit from the first table surface of the second light emitting unit along the Y direction, and the other can connect to the first light emitting unit from the second table surface of the second light emitting unit along the Y direction, which greatly reduces the possibility of short circuit failure of the bridging electrode and greatly improves the reliability of the light emitting diode.

[0009] The light emitting device provided by the present invention includes the above-mentioned light emitting diode, and therefore also has the above-mentioned advantages. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a top view of an existing light emitting diode; Figure 2 is a cross-sectional view of the first embodiment of the present invention; Figure 3 A top view of the first embodiment of the present invention; Figure 4 In the first embodiment of the present invention, Figure 3 Further showing a top view of the bridging electrode extension portion on the basis of; Figure 5 In the first embodiment of the present invention, Figure 3 and Figure 4 A top view that further reflects the structural parameters; Figure 6 In the first embodiment of the present invention, Figure 4 Based on the above, the cross-sectional view is obtained along the AA' direction tangent line; Figure 7 In the first embodiment of the present invention, Figure 4 Based on the above, the cross-sectional view is obtained along the BB' direction tangent line; Figure 8 The top view of the pad electrode is supplemented in the first embodiment of the present invention; Fig. 9 is a top view of a light emitting diode according to a second embodiment of the present invention; Fig.10 It is a cross-sectional view of a light emitting device according to a third embodiment of the present invention.

[0011] Reference numerals: 10 light emitting diode 20 light emitting unit 21 first light emitting unit 22 second light emitting unit 30 bridge electrode 31 bridge electrode extension 40 isolation channel 100 substrate 200 epitaxial structure 201 first semiconductor layer 202 active layer 203 second semiconductor layer 301 first electrode 302 second electrode 401 first port 402 second port 501 first pad 502 second pad 600 bonding layer 700 insulation layer 800 protection layer S1 First table S2 Second table K1 First side wall K2 Second side wall 50 light emitting device 51 driving substrate DETAILED DESCRIPTION

[0012] The following specific embodiments illustrate the embodiments of the present invention, and those familiar with the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0013] It should be noted that the diagrams provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Although the diagrams only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of each component can be changed at will during actual implementation, and the layout of the components may also be more complex. The structures, proportions, sizes, etc. illustrated in the drawings of the specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in this application, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by the present invention.

[0014] like Figure 1As shown, the existing high-voltage light-emitting diode 10 includes a plurality of light-emitting units, and the light-emitting units include adjacent first light-emitting units 21 and second light-emitting units 22. The arrangement direction of the first light-emitting unit 21 and the second light-emitting unit 22 is the Y direction, and they are separated from each other by the isolation path 40. The bridge electrode 30 connects the adjacent light-emitting units along the Y direction, and electrically connects the first light-emitting unit 21 and the second light-emitting unit 22. For the existing high-voltage light-emitting diode, the bridge electrode only connects the adjacent light-emitting units in series in a single direction (the Y direction in the figure), that is, the direction in which the adjacent light-emitting units are arranged. However, during the process of die bonding and use of the light-emitting diode, it is easy to cause damage to the metal surface of the bridge electrode, thereby causing only a single-path bridge electrode to short-circuit and fail, which seriously affects the reliability of the high-voltage light-emitting diode.

[0015] In order to solve the above problems, the inventors have invented a light emitting diode after experimental design and verification, including: A substrate, comprising an upper surface; a plurality of light-emitting units are arranged on the upper surface of the substrate, the light-emitting units include adjacent first light-emitting units and second light-emitting units, an isolation path is provided between the first light-emitting units and the second light-emitting units, an arrangement direction from the first light-emitting units to the second light-emitting units is a Y direction, and a direction perpendicular to the Y direction is an X direction; The first light-emitting unit and the second light-emitting unit both contain an epitaxial structure, and the epitaxial structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer from top to bottom; The first semiconductor layer has an upper surface, which is a first mesa; the second semiconductor layer has an upper surface, and a portion of the upper surface not covered by the first semiconductor layer and the active layer is a second mesa; The first light emitting unit further comprises a first electrode disposed on its first surface, and a second port disposed on its second surface; The second light emitting unit further comprises a second electrode disposed on its second surface, and a first port disposed on its first surface; A bridging electrode connecting the first light-emitting unit and the second light-emitting unit, the bridging electrode connecting the adjacent first port and the second port along the Y direction, in the second light-emitting unit, the bridging electrode passes through the first mesa along the X direction and covers part of the second mesa, and the part covering the second mesa is the bridging electrode extension.

[0016] Optionally, a horizontal projection area of ​​the bridging electrode extension portion on the second mesa occupies 0.8%-15% of a horizontal projection area of ​​the second mesa.

[0017] Optionally, the second platform where the bridging electrode extension portion is located has a width D in the X direction, the bridging electrode extension portion has a width d in the X direction, and the ratio of d to D ranges from 60% to 90%.

[0018] Optionally, the bridging electrode extension portion has a width d in the X direction, and the width d ranges from 4 μm to 60 μm.

[0019] Optionally, the second stage where the bridging electrode extension portion is located has a width D in the X direction, and the width of D ranges from 6 μm to 70 μm.

[0020] Optionally, a portion of the bridge electrode at the first mesa of the second unit has a minimum width W in the X direction, and W is 1 μm to 30 μm.

[0021] Optionally, the isolation track has a width g in the Y direction, and the width g is in the range of 3 μm to 30 μm.

[0022] Optionally, the bridging electrode extension portion has a length L1 in the Y direction, and the length L1 ranges from 5 μm to 95 μm.

[0023] Optionally, the bridging electrode has a length L2 in the Y direction, and the range of L2 is 18 μm-110 μm.

[0024] Optionally, a first side wall is provided between the first table surface and the second table surface of the second light emitting unit, and the first side wall forms an angle α with the horizontal surface, and the angle α ranges from 35° to 75°.

[0025] Optionally, the bridging electrode extension portion has a thickness h1 on the second mesa, and the thickness is 0.5 μm-8 μm.

[0026] Optionally, a second side wall is provided between the second table of the second light-emitting unit and the isolation channel, and the second side wall forms an angle β with the horizontal surface, and the angle β is in the range of 50° to 85°.

[0027] Optionally, the bridge electrode has a thickness h2 on the isolation track, and the thickness is 0.5 μm-8 μm.

[0028] Optionally, the light emitting diode has one or two pairs of adjacent first light emitting units and second light emitting units.

[0029] Optionally, a bonding layer is also provided on the substrate.

[0030] Optionally, an insulating layer is further provided outside the epitaxial structure, and the insulating layer is a single-layer or multi-layer structure.

[0031] Optionally, a first pad is disposed on the first electrode, and a second pad is disposed on the second electrode.

[0032] Optionally, the first electrode and / or the second electrode has an extension portion.

[0033] Optionally, the material of the bridging electrode is one or a combination of Ti, Pt, and Au.

[0034] The present invention also provides a light-emitting device, comprising any one of the light-emitting diodes described above.

[0035] The present invention is described in detail below with reference to specific embodiments. Embodiment 1

[0036] This embodiment provides a light emitting diode, see Figure 2 and Figure 3 , a plurality of light-emitting units 20 are arranged on the substrate 100, such as a first light-emitting unit 21 and a second light-emitting unit 22, the two light-emitting units are adjacent and separated by an isolation path 40, and the arrangement direction of the first light-emitting unit 21 and the second light-emitting unit 22 is set as Y, and the direction perpendicular to Y is set as X. It should be noted that the X and Y directions in this document are only set for the convenience of understanding the present invention, and are not the actual arrangement directions. The substrate 100 can be sapphire, silicon substrate, silicon carbide, etc., and sapphire is selected in this embodiment.

[0037] The first light-emitting unit 21 and the second light-emitting unit 22 both contain an epitaxial structure 200, and the epitaxial structure 200 is composed of a first semiconductor layer 201, an active layer 202, and a second semiconductor layer 203 from top to bottom. The first semiconductor layer 201 can be an N-type semiconductor layer, the active layer 202 can be a multi-layer quantum well layer, which can provide red light or infrared light radiation, and the second semiconductor layer 203 can be a P-type semiconductor layer. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only the basic constituent units of the semiconductor stacking layer. On this basis, the semiconductor stacking layer can also include other functional structural layers that have an optimization effect on the performance of the light-emitting diode, such as an ohmic contact layer or a current spreading layer. In this embodiment, the light-emitting diode is preferably a flip-chip light-emitting diode, and is preferably a red light diode or an infrared light diode.

[0038] The upper surface of the first semiconductor layer 201 is a first mesa S1 , and the upper surface of the second semiconductor layer 203 that is not covered by the first semiconductor layer 201 or the active layer 202 is a second mesa S2 .

[0039] A first electrode 301 is disposed on the first mesa S1 of the first light-emitting unit 21, and a second port 402 is disposed on the second mesa S2 of the first light-emitting unit. The second port 402 can be electrically connected to the second semiconductor layer 203 and can serve as a bridging point of the bridge electrode 30 on the first light-emitting unit 21. In this embodiment, the first electrode 301 is a cathode, and the second port 402 is an anode.

[0040] A second electrode 302 is disposed on the second table S2 of the second light emitting unit 22, and a first port 401 is disposed on the first table of the second light emitting unit 22. The first port 401 can be electrically connected to the first semiconductor layer 201 and can serve as a bridging point of the bridge electrode 30 on the second light emitting unit 22. In this embodiment, the second electrode 302 is a positive electrode, and the first port 401 is a negative electrode.

[0041] In this embodiment, the first port and the first electrode are negative electrodes, and the material is selected from one or more alloys or combinations of Au, Pt, Ti, Ge, and Ni. The second port and the second electrode are positive electrodes, and the material is selected from one or more alloys or combinations of Au, Be, Ti, and Pt.

[0042] The bridge electrode 30 connects the first port 401 and the second port 402. Figure 3 As shown, the bridging electrode 30 crosses the isolation path 40 in the Y direction to electrically connect the first light emitting unit 21 with the second light emitting unit 22. In this embodiment, the material of the bridging electrode 30 is one or an alloy or a combination of Ti, Pt, Au, and Al.

[0043] Compared with the conventional light emitting diode bridge electrode 30 (such as Figure 1 ), in this embodiment, the bridging electrode is relatively arranged to the right, so that it passes through the first table S1 of the second light-emitting unit 22 in the X direction and covers part of the second table S2. Therefore, the bridging electrode 30 can not only conduct electricity on the first table S1, but also transmit current on the second table S2. When the bridging electrode 30 on the S1 table is damaged, the bridging electrode 30 can also be transmitted to the second table S2 through the side wall and continue to complete the current transmission, which is equivalent to having one more current transmission channel than the traditional light-emitting diode, greatly improving the reliability of the light-emitting diode.

[0044] like Figure 4 As shown, the bridge electrode 30 passes through the first mesa S1 along the X direction and covers a portion of the second mesa S2 , and the portion covering the second mesa (the gray shaded portion in the bridge electrode) is the bridge electrode extension portion 31 .

[0045] In some embodiments, the horizontal projection area of ​​the bridge electrode extension 31 on the second table S2 accounts for 0.8% to 15% of the area of ​​the second table S2. If the area is too small, effective current transmission cannot be provided on the second table. If the area is too large, the remaining portion of the bridge electrode 30 on the first table S1 will be too small, which will affect the transmission of the bridge electrode 30 on the first table S1. In this embodiment, the area ratio is selected to be 3% to 8%.

[0046] like Figure 5The bridge electrode extension 31 has a width d in the X direction. In some embodiments, d ranges from 4 μm to 60 μm. If it is less than 4 μm, the bridge electrode extension 31 is too narrow and it is difficult for the current to be effectively transmitted on the second mesa S2. If it is greater than 60 μm, it will affect the transmission of the current on the first mesa S1 and easily cause voltage problems. In this embodiment, d is 5 μm to 25 μm.

[0047] The second table S2 at the bridging electrode extension portion 31 also has a width D in the X direction, which is the lateral (X direction) spacing between the edge of the first table S1 and the edge of the second table S2. In some embodiments, D ranges from 6μm to 70μm. This value affects the difficulty of setting the bridging electrode 31 between the first table S1 and the second table S2. In this embodiment, D is 10μm-40μm.

[0048] In some embodiments, the ratio d / D of d to D is in the range of 60%-90%, which can ensure that the bridging electrode extension 31 has a suitable area ratio, has a suitable current channel, and does not affect the current transmission of the bridging electrode 30 on the first table S1.

[0049] The portion of the bridging electrode 30 at the first table S1 of the second unit 22 (i.e., the portion of the bridging electrode 30 at the second unit 22 minus the bridging electrode extension 31) has a minimum width W in the X direction. In some embodiments, W ranges from 1 μm to 30 μm. The value of this portion represents the minimum portion of the bridging electrode 31 at the first table S1 of the second light-emitting unit 22. That is, if the range is too small (e.g., W is less than 1 μm), it proves that the bridging electrode 31 is too much offset to the right, and most of it falls on the second table S2, which is not conducive to the current transmission of the bridging electrode 30 on the first table S1, and it is easy to cause the bridging electrode extension 31 to be too large, which may exceed the second table S2 and cause voltage problems and ESD problems. If the range is too large (such as W is greater than 30μm), the current will be largely distributed in the portion of the bridging electrode 31 at the first table S1, and only a very small portion of the bridging electrode extension 31, which means that only a small amount of current can be transmitted at the second table S2, which is not conducive to the light-emitting performance of the high-voltage light-emitting diode and is not easy to prevent short-circuit problems. In this embodiment, the range of W is 1μm-20μm.

[0050] like Figure 4The first light-emitting unit 21 is separated from the second light-emitting unit 22 by an isolation path 40. There is no epitaxial structure at the isolation path 40, so it cannot conduct electricity. The isolation path 40 can be an exposed substrate or another oxide insulating layer. In some embodiments, the isolation path has a width g in the Y direction, and the range of g is 3μm-30μm. If the range is too small, it will be unfavorable for the arrangement of the light-emitting units, the process will be difficult, and it will also cause the evaporated metal on the side wall of the bridge electrode to be thin, which is prone to short circuit. If the range is too large, the area of ​​the light-emitting diode will be too large, and the bridge electrode 30 will have to increase in length, which is easy to cause ESD or other voltage problems. In this embodiment, g is 3-25μm.

[0051] like Figure 5 , the bridge electrode extension 31 has a length L1 in the Y direction, and the bridge electrode 30 has a length L2 in the Y direction. In some embodiments, L1 ranges from 5μm to 95μm. As described above, the range of d can ensure the width of the bridge electrode extension 31, and the range of L1 ensures the length of the bridge electrode extension 31. L1 within a suitable range is conducive to the transmission of current on the S2 table. In this embodiment, L1 is 5μm-85μm In some embodiments, L2 ranges from 18 μm to 110 μm, and preferably ranges from 30 μm to 90 μm in this embodiment.

[0052] according to Figure 4 The tangent line in the AA' direction can be obtained Figure 6 The cross-sectional diagram of Figure 6 As shown, there is a first side wall K1 between the first table S1 and the second table S2 of the second light-emitting unit 22, and the side wall K1 has an angle α with the horizontal surface. In some embodiments, the angle α ranges from 35° to 75°. The range of the angle α affects the coverage of the bridge electrode 30 on the second table S2. For example, when evaporating the bridge electrode 30, if the first side wall K1 is too steep, such as α>75°, the bridge electrode 30 cannot be well covered and connected at the first side wall K1, which easily leads to the breakage of the bridge electrode at the first table S1 and the bridge electrode at the second table S2, resulting in failure to work normally; if the second side wall K2 is too gentle, if α<30°, it is easy to cause most of the bridge electrode 30 to cover the first side wall K1, and cannot be deposited on the second table S2, affecting the reliability of the light-emitting diode. In this embodiment, the angle α ranges from 40° to 70°.

[0053] The bridge electrode extension 31 has a thickness h1 on the second table S2. In some embodiments, the thickness is 0.5 μm-8 μm. If the thickness is too thin, effective current transmission cannot be provided. If the thickness is too thick, it is easy to cause a large height difference on the chip surface, and the process difficulty and cost will also be greatly increased. In this embodiment, the thickness h1 is 1.5 μm-3 μm.

[0054] according to Figure 4 The tangent line in the BB' direction can be obtained Figure 7 The cross-sectional diagram of Figure 7 As shown, there is a second side wall K2 between the second table S2 of the second light-emitting unit 22 and the isolation channel 40, and the second side wall K2 has an angle β with the horizontal surface. In some embodiments, the range of the angle β is 50°-85°. The range of the angle β affects the reliability of the bridge electrode 30 passing through the isolation channel 40 in the Y direction. The angle is too small or too large, which is not conducive to the deposition of the bridge electrode 30 on the isolation channel 40. Further, the bridge electrode 30 has a thickness h2 on the isolation channel 40, and the thickness is 0.5μm-8μm. In this embodiment, the range of β is 65°-85°, and the range of h2 is 1.5μm-3μm.

[0055] Since the top view of the present invention involves more structures, it is easy to understand. Figure 3 , 4 , 5, and 8 are schematic pad electrodes. Figure 8 As shown, in some embodiments, a first pad 501 is disposed on the first electrode 301, and a second pad 502 is disposed on the second electrode 302. The material of the first pad 501 and the second pad 502 is one or more of Ti / Al / Ni / Au / Pt / Sn.

[0056] like Figure 2 As shown, in some embodiments, a bonding layer 600 is further provided on the substrate 100. The function of the bonding layer 600 is to bond the substrate 100 and a plurality of light-emitting units 20 together. The bonding layer can be a metal bonding layer or an oxide bonding layer. In this embodiment, the bonding layer is an oxide. In some embodiments, the bonding layer 600 can also be roughened to obtain a better light-emitting effect.

[0057] like Figure 2As shown, in some embodiments, an insulating layer 700 is further provided outside the epitaxial structure 200, and the insulating layer 700 can protect the epitaxial structure and can cover the isolation path 40, so as to better realize the electrical isolation between the first light-emitting unit 21 and the second light-emitting unit 22. In some embodiments, the insulating layer 700 can be a single-layer structure, such as magnesium fluoride or silicon nitride, or a double-layer structure, such as a DBR reflector composed of SiO2 and TiO2, or a multi-layer structure, such as a combination of at least two of a plurality of structures such as magnesium fluoride, silicon nitride, SiO2, TiO2, ZnO2, ZrO2, Cu2O3, etc.

[0058] In some embodiments, a protective layer 800 ( Figure 2 The shaded part) can prevent short circuit at the electrode, and the material can be one or more of magnesium fluoride, silicon nitride, and silicon oxide.

[0059] In some embodiments, the first electrode 301 or the second electrode 302 may have an extended portion, such as a finger-shaped electrode. Embodiment 2

[0060] like Figure 3 and Fig. 9 As shown, in some embodiments, the light emitting diode has one or two pairs of adjacent first light emitting units 21 (21') and second light emitting units 22 (22'). In this embodiment, Fig. 9 , having two pairs of adjacent first light emitting units and second light emitting units. Of course, more light emitting units can be arranged according to needs, and the present invention is not limited thereto. Embodiment 3

[0061] like Fig.10 As shown, the present invention further provides a light emitting device 50, which has a driving substrate 51, and a plurality of light emitting diodes 10 are arranged on the driving member 51. The light emitting diodes 10 are any one of the light emitting diodes mentioned above or a combination thereof.

[0062] In summary, the present invention provides a light emitting diode 10, which is different from the conventional light emitting diode having a bridge electrode 30 (such as Figure 1 ), the present invention provides several embodiments, and the bridging electrode 30 is arranged in the X direction, passing through the first table S1 of the second light-emitting unit 22, and covering part of the second table S2. Therefore, the bridging electrode 30 can not only conduct electricity on the first table S1, but also transmit current on the second table S2. When the bridging electrode 30 on the S1 table is damaged, the bridging electrode 30 can also be transmitted to the second table S2 through the side wall, and continue to complete the current transmission, which is equivalent to having one more current transmission channel than the traditional light-emitting diode, greatly improving the reliability of the light-emitting diode.

[0063] The present invention further provides a light emitting device 50, which is equipped with the above-mentioned light emitting diode 10 and thus also has the above-mentioned advantages.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode, characterized in that: include: A substrate including an upper surface; A plurality of light-emitting units are arranged on the upper surface of the substrate, the light-emitting units include adjacent first light-emitting units and second light-emitting units, an isolation path is provided between the first light-emitting units and the second light-emitting units, the arrangement direction from the first light-emitting units to the second light-emitting units is the Y direction, and the direction perpendicular to the Y direction is the X direction; The first light-emitting unit and the second light-emitting unit both contain an epitaxial structure, and the epitaxial structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer from top to bottom; The first semiconductor layer has an upper surface, which is a first mesa; the second semiconductor layer has an upper surface, and a portion of the upper surface not covered by the first semiconductor layer and the active layer is a second mesa; The first light emitting unit further comprises a first electrode disposed on the first table surface, and a second port disposed on the second table surface; The second light emitting unit further comprises a second electrode disposed on the second mesa, and a first port disposed on the first mesa; A bridging electrode connecting the first light-emitting unit and the second light-emitting unit, wherein the bridging electrode connects adjacent first ports and second ports along the Y direction. In the second light-emitting unit, the bridging electrode passes through the first mesa along the X direction and covers a portion of the second mesa, and the portion covering the second mesa is the bridging electrode extension portion.

2. A light emitting diode according to claim 1, characterized in that: The horizontal projection area of ​​the bridging electrode extension portion on the second table surface accounts for 0.8%-15% of the horizontal projection area of ​​the second table surface.

3. A light emitting diode according to claim 1, characterized in that: The second platform where the bridging electrode extension portion is located has a width D in the X direction, and the bridging electrode extension portion has a width d in the X direction, and the ratio of d to D ranges from 60% to 90%.

4. A light emitting diode according to claim 1, characterized in that: The bridge electrode extension portion has a width d in the X direction, and the width d ranges from 4 μm to 60 μm.

5. A light emitting diode according to claim 4, characterized in that: The second platform where the bridging electrode extension portion is located has a width D in the X direction, and the width of D ranges from 6 μm to 70 μm.

6. A light emitting diode according to claim 1, characterized in that: The portion of the bridge electrode at the first terrace of the second unit has a minimum width W in the X direction, and W is 1 μm to 30 μm.

7. A light emitting diode according to claim 1, characterized in that: The isolation track has a width g in the Y direction, and the range of g is 3 μm-30 μm.

8. A light emitting diode according to claim 1, characterized in that: The bridge electrode extension portion has a length L1 in the Y direction, and the range of L1 is 5 μm-95 μm.

9. A light emitting diode according to claim 8, characterized in that: The bridge electrode has a length L2 in the Y direction, and the range of L2 is 18 μm-110 μm.

10. The light emitting diode according to claim 1, characterized in that: A first side wall is provided between the first table surface and the second table surface of the second light emitting unit. The first side wall forms an angle α with the horizontal surface, and the angle α is in the range of 35-75°.

11. The light emitting diode according to claim 1, characterized in that: The bridge electrode extension portion has a thickness h1 on the second mesa, and the thickness is 0.5 μm-8 μm.

12. The light emitting diode according to claim 1, characterized in that: A second side wall is provided between the second table surface of the second light emitting unit and the isolation channel. The second side wall forms an angle β with the horizontal surface. The angle β is in the range of 50° to 85°.

13. The light emitting diode according to claim 1, characterized in that: The bridge electrode has a thickness h2 on the isolation track, and the thickness is 0.5 μm-8 μm.

14. The light emitting diode according to claim 1, characterized in that: The light emitting diode has one or two pairs of adjacent first light emitting units and second light emitting units.

15. The light emitting diode according to claim 1, characterized in that: A bonding layer is also arranged on the substrate.

16. The light emitting diode according to claim 1, characterized in that: An insulating layer is also arranged outside the epitaxial structure, and the insulating layer is a single-layer or multi-layer structure.

17. The light emitting diode according to claim 1, characterized in that: The first electrode has a first pad thereon, and the second electrode has a second pad thereon.

18. The light emitting diode according to claim 1, characterized in that: The first electrode and / or the second electrode has an extended portion.

19. A light emitting diode according to claim 1, characterized in that: The material of the bridge electrode is one or a combination of Ti, Pt and Au.

20. A light emitting device, characterized in that: A light emitting diode comprising any one of items 1-19 above.

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