Display device, display panel and manufacturing method thereof

Abstract

The invention relates to a display device, a display panel and a manufacturing method of the display panel, and relates to the technical field of display. The display panel comprises a driving backboard, a plurality of light-emitting devices, a pixel definition layer and a truncation layer. The light-emitting device comprises a first electrode, a light-emitting layer and a second electrode. The pixel definition layer is provided with a plurality of pixel openings, and one pixel opening exposes one first electrode; the pixel definition layer comprises a definition layer and a protection layer covering the definition layer; the material of the protective layer comprises an inorganic material; the truncation layer is arranged on the surface, away from the driving backboard, of the pixel definition layer and provided with a plurality of truncation holes which are overlapped with the pixel openings in a one-to-one correspondence mode, and the light-emitting layer and the second electrode of the light-emitting device are located in the range surrounded by one truncation hole; the side wall of the truncation hole is provided with a truncation groove surrounding the pixel opening overlapped with the truncation hole; the second electrode in the truncation hole is in contact with the truncation layer, and at least part of the second electrode is electrically connected through the truncation layer. And the cost can be reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular, to a display device, a display panel, and a method for manufacturing a display panel. Background Art

[0002] At present, self-luminous display panels using light-emitting diodes as light-emitting devices have been widely used, but their manufacturing process is complicated and has high requirements on equipment, resulting in high production costs.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0004] The present disclosure provides a display device, a display panel and a method for manufacturing the display panel, which are beneficial to reducing production costs.

[0005] According to one aspect of the present disclosure, there is provided a display panel, comprising:

[0006] Driver backplane;

[0007] A plurality of light-emitting devices are provided on the driving backplane, wherein the light-emitting devices include a first electrode, a light-emitting layer, and a second electrode which are sequentially stacked in a direction away from the driving backplane;

[0008] A pixel definition layer is provided on the same surface of the driving backplane as the light-emitting device; the pixel definition layer is provided with a plurality of pixel openings, one of the pixel openings exposes one of the first electrodes, and a light-emitting layer of one of the light-emitting devices is stacked on the first electrode exposed by one of the pixel openings; the pixel definition layer comprises a definition layer and a protective layer covering the definition layer; the material of the protective layer comprises an inorganic material;

[0009] A truncation layer is provided on the surface of the pixel definition layer away from the driving backplane, and has a plurality of truncation holes corresponding to and overlapping with each of the pixel openings. The light-emitting layer and the second electrode of the light-emitting device are located within a range surrounded by the truncation holes. The sidewalls of the truncation holes are provided with truncation grooves surrounding the pixel openings overlapping therewith. The second electrode in the truncation hole contacts the truncation layer, and at least a portion of the second electrode is electrically connected through the truncation layer.

[0010] In an exemplary embodiment of the present disclosure, the protective layer includes a first protective sublayer and a second protective sublayer; the first protective sublayer covers the defining layer; the second protective sublayer covers the first protective sublayer and extends to the surface of the first electrode away from the driving backplane.

[0011] In an exemplary embodiment of the present disclosure, the truncation layer includes a conductive layer and a shielding layer stacked in sequence in a direction away from the driving backplane, and the shielding layer and the conductive layer are made of different materials; the truncation groove is located in the conductive layer; the second electrode in the truncation hole extends into the truncation groove and contacts the conductive layer.

[0012] In an exemplary embodiment of the present disclosure, the depth of the truncation groove decreases in a direction away from the driving back plate.

[0013] In an exemplary embodiment of the present disclosure, the display panel further includes:

[0014] The encapsulation layer includes a first inorganic layer, an organic layer and a second inorganic layer, wherein the first inorganic layer covers the second electrode and the cutoff layer and extends continuously at the cutoff groove; the organic layer is arranged on the surface of the first inorganic layer away from the driving backplane, and the second inorganic layer covers the organic layer.

[0015] In an exemplary embodiment of the present disclosure, the light emitting device includes at least three light emitting devices with different luminous colors, and the depths of the truncation grooves of the truncation holes overlapping the pixel openings corresponding to two of the light emitting devices with different luminous colors are different.

[0016] In an exemplary embodiment of the present disclosure, the light-emitting device includes a first light-emitting device emitting red light, a second light-emitting device emitting green light, and a third light-emitting device emitting blue light; the depth of the truncation groove of the truncation hole overlapping the pixel opening corresponding to the first light-emitting device is a first depth; the depth of the truncation groove of the truncation hole overlapping the pixel opening corresponding to the second light-emitting device is a second depth; the depth of the truncation groove of the truncation hole overlapping the pixel opening corresponding to the third light-emitting device is a third depth;

[0017] The first depth is greater than the second depth, and the second depth is greater than the third depth.

[0018] In an exemplary embodiment of the present disclosure, the first depth is not less than 0.3 μm and not more than 1.5 μm; the second depth is not less than 0.3 μm and not more than 1.2 μm; the third depth is not less than 0.3 μm and not more than 1 μm.

[0019] In an exemplary embodiment of the present disclosure, the light emitting device includes a first light emitting device and a second light emitting device that are adjacent to each other;

[0020] The display panel further comprises a light-emitting extension portion, which is stacked on a surface of the cut-off layer away from the driving backplane and is located between two adjacent light-emitting devices; the second electrode comprises an electrode extension portion covering the light-emitting extension portion and disconnected from the second electrode;

[0021] The light-emitting extension portion includes a first light-emitting extension portion that is arranged on the same layer as the light-emitting layer of the first light-emitting device and is disconnected, and a second light-emitting extension portion that is arranged on the same layer as the light-emitting layer of the second light-emitting device and is disconnected; the first light-emitting extension portion is away from the boundary of the first light-emitting device and is connected to the second light-emitting extension portion that is away from the boundary of the second light-emitting device.

[0022] In an exemplary embodiment of the present disclosure, the light emitting device includes a first light emitting device and a second light emitting device that are adjacent to each other;

[0023] The display panel further comprises a light-emitting extension portion, which is stacked on a surface of the cut-off layer away from the driving backplane and is located between two adjacent light-emitting devices; the second electrode comprises an electrode extension portion covering the light-emitting extension portion and disconnected from the second electrode;

[0024] The side walls of the electrode extension portion and the light emitting extension portion covered by the electrode extension portion shrink in a direction away from the driving back plate.

[0025] According to one aspect of the present disclosure, there is provided a method for manufacturing a display panel, comprising:

[0026] forming a driving backplane;

[0027] forming a plurality of first electrodes of light-emitting devices on the driving backplane;

[0028] forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to each of the first electrodes;

[0029] forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material;

[0030] A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into at least n groups, where n is a positive integer not less than 2;

[0031] Executing device steps for each group of the truncated holes in sequence, the device steps comprising:

[0032] A truncated groove is formed on the side wall of the truncated hole, surrounding and overlapping the defined opening;

[0033] removing at least a portion of the protective layer covering the first electrode in the cut-off hole to expose the first electrode;

[0034] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off hole, wherein the light-emitting layer is disconnected at the cut-off groove;

[0035] A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0036] In an exemplary embodiment of the present disclosure, before performing the device step for the i+1th group of truncated holes, the manufacturing method further includes:

[0037] The second electrode and the light-emitting layer formed in the (i+1)th group of the truncation holes when the device step is performed on the i-th group of the truncation holes are removed, 1≤i≤n.

[0038] In an exemplary embodiment of the present disclosure, forming a protective layer covering the defining layer and the first electrode exposed by the defining opening comprises:

[0039] forming a first protective sublayer covering the defining layer and the first electrode exposed by the defining opening;

[0040] Patterning the first protective sublayer, removing the first protective sublayer defining the bottom of the opening, so that the first protective sublayer exposes the first electrode;

[0041] A second protective sublayer is formed to cover the first protective sublayer and the first electrode exposed by the first protective sublayer.

[0042] In an exemplary embodiment of the present disclosure, a truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate; comprising:

[0043] forming a conductive layer covering the protective layer;

[0044] forming a shielding layer covering the conductive layer; the shielding layer and the conductive layer are made of different materials;

[0045] A plurality of truncation holes are provided which penetrate through the shielding layer and the conductive layer, and each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence.

[0046] In an exemplary embodiment of the present disclosure, a truncated groove is formed on the side wall of the truncated hole, surrounding the defined opening overlapping therewith; comprising:

[0047] The conductive layer is etched in the truncation hole to form a truncation groove.

[0048] In an exemplary embodiment of the present disclosure, the device step further includes:

[0049] A first inorganic layer covering the second electrode is formed, wherein the first inorganic layer continuously extends at the cut-off groove.

[0050] In an exemplary embodiment of the present disclosure, after performing the device step for the nth group of truncated holes, the manufacturing method further includes:

[0051] forming an organic layer on a surface of the first inorganic layer away from the driving backplane;

[0052] A second inorganic layer is formed covering the organic layer.

[0053] In an exemplary embodiment of the present disclosure, n is equal to 3, and the truncated holes include a first group of truncated holes, a second group of truncated holes, and a third group of truncated holes; the luminescent colors of the luminescent layers in any two groups of the first group of truncated holes, the second group of truncated holes, and the third group of truncated holes are different.

[0054] According to one aspect of the present disclosure, there is provided a method for manufacturing a display panel, comprising:

[0055] forming a driving backplane;

[0056] forming a plurality of first electrodes of light-emitting devices on the driving backplane;

[0057] forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to each of the first electrodes;

[0058] forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material;

[0059] A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into a first group and a second group, and the second group of truncation holes includes a first group and a second group;

[0060] forming a truncated groove on the sidewall of the first group of truncated holes, surrounding and overlapping the defined opening;

[0061] removing at least a portion of the protective layer covering the first electrode in the first group of truncation holes to expose the first electrode;

[0062] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0063] forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer;

[0064] removing the light-emitting layer and the second electrode formed in the second group of the cut-off holes when the light-emitting layer and the second electrode are formed in the first group of the cut-off holes;

[0065] forming a truncated groove on the sidewall of the second group of truncated holes, surrounding and overlapping the defined opening;

[0066] removing at least a portion of the protective layer covering the first electrode and covering the second group of truncated holes to expose the first electrode;

[0067] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off holes of the first group, wherein the light-emitting layer is disconnected at the cut-off groove;

[0068] forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer;

[0069] When the light-emitting layer and the second electrode are formed in the cut-off holes of the first group, the light-emitting layer and the second electrode formed in the cut-off holes of the second group are removed to expose the first electrode;

[0070] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off holes of the second group, wherein the light-emitting layer is disconnected at the cut-off groove;

[0071] A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0072] According to one aspect of the present disclosure, there is provided a method for manufacturing a display panel, comprising:

[0073] forming a driving backplane;

[0074] forming a plurality of first electrodes of light-emitting devices on the driving backplane;

[0075] forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to each of the first electrodes;

[0076] forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material;

[0077] A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into a first group, a second group and a third group;

[0078] A truncated groove is formed on the side wall of each truncated hole, surrounding and overlapping the defined opening;

[0079] removing at least a portion of the protective layer covering the first electrode to expose the first electrode;

[0080] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0081] forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer;

[0082] When the light-emitting layer and the second electrode are formed in the first group of cut-off holes, the light-emitting layer and the second electrode are removed in the second group and the third group of cut-off holes to expose the first electrode;

[0083] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the second group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0084] forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer;

[0085] When the light-emitting layer and the second electrode are formed in the second group of cut-off holes, the light-emitting layer and the second electrode are removed, so as to expose the first electrode;

[0086] forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the third group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0087] A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0088] According to one aspect of the present disclosure, a display device is provided, comprising any one of the display panels described above.

[0089] The display device, display panel and manufacturing method disclosed herein are provided with a truncation layer on the pixel definition layer, and an undercut structure, i.e., a truncation groove, is formed on the side wall of the truncation layer; when forming the light-emitting layer, the light-emitting material can be cut off at the stage of the truncation groove to realize the patterning of the light-emitting layer, thereby avoiding the use of a special mask, saving the design and production costs of the mask, and being conducive to reducing costs. When the truncation groove is formed in the truncation layer, the first electrode can be protected by the protective layer of the pixel definition layer to prevent the first electrode from being corroded; after the truncation groove is formed, the protective layer covering the first electrode is first removed to expose the first electrode, and then the light-emitting layer is formed to ensure that the light-emitting layer can contact the first electrode.

[0090] In addition, the first electrodes of adjacent light-emitting devices are arranged at intervals, and the light-emitting layers of adjacent light-emitting devices are also arranged at intervals; when the second electrode is formed, it will also be cut off by the cut-off groove, but it is in contact with the bottom of the cut-off groove, so that the second electrodes of adjacent light-emitting devices are not in direct contact, but can be electrically connected to form a conductive whole through the cut-off layer, and then can share the same signal. By controlling the signal of the first electrode, the light-emitting device can emit light independently.

[0091] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0092] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0093] Figure 1 FIG. 1 is a schematic top view of an embodiment of a display panel disclosed herein.

[0094] Figure 2 It is a cross-sectional schematic diagram of an embodiment of the display panel disclosed in the present invention.

[0095] Figure 3 FIG. 1 is a schematic diagram of a light-emitting layer in an embodiment of a display panel disclosed herein.

[0096] Figure 4 FIG. 4 is a schematic diagram of a light-emitting layer in another embodiment of a display panel disclosed herein.

[0097] Figure 5-Figure 24 It is a cross-sectional schematic diagram corresponding to some steps in the first embodiment of the first type of the display panel disclosed in the present invention.

[0098] Fig.25 and Fig.26It is a cross-sectional schematic diagram corresponding to some steps in the second implementation manner of the first type of the display panel disclosed in the present invention.

[0099] Fig. 27 It is a cross-sectional schematic diagram corresponding to some steps in the second type of implementation of the display panel disclosed in the present invention. DETAILED DESCRIPTION

[0100] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present disclosure will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0101] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express an open-ended inclusive meaning and mean that additional elements / components / etc. may exist in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used merely as labels and are not intended to limit the quantity of their objects.

[0102] The "overlap" of feature A and feature B in this article means that the orthographic projection of feature A on a plane and the orthographic projection of feature B on the same plane at least partially overlap; the plane can be the surface of the driving backplane or other plane parallel to the driving backplane.

[0103] The present disclosure provides a display panel. Figure 1 As shown, the display panel can be divided into at least a display area AA and a peripheral area WA outside the display area AA. The peripheral area WA can be a continuous annular area surrounding the display area AA; or it can be a discontinuous area surrounding the display area AA. For example, the peripheral area WA can be distributed on both sides of the display area AA. The display area AA can be used to emit light to display images, while the peripheral area WA does not emit light.

[0104] like Figure 2 As shown, the display panel may include a driving backplane BP and a plurality of light emitting devices LD arranged on one side of the driving backplane BP, wherein:

[0105] The driving backplane BP has a driving circuit, which can drive the light-emitting device LD to emit light to display an image. In some embodiments of the present disclosure, the driving backplane BP may include a substrate SU and a circuit layer located on one side of the substrate SU. The substrate SU may be a flat plate structure, and its material may be a hard material such as glass, or a flexible material such as polyimide. At the same time, the substrate SU may be a single-layer or multi-layer structure.

[0106] The circuit layer includes the above-mentioned driving circuit. For example, the driving circuit may include a pixel circuit located in the display area AA and a peripheral circuit located in the peripheral area WA. The pixel circuit may be a 7T1C, 8T1C or other structure. As long as it can drive the light-emitting device LD to emit light, its structure is not specifically limited. nTmC means that a pixel circuit includes n thin-film transistors (indicated by the letter "T") and m capacitors (indicated by the letter "C"). The number of pixel circuits may be the same as the number of light-emitting devices LD, and each light-emitting device LD is connected in a one-to-one correspondence. Of course, the same pixel circuit may also be connected to multiple light-emitting devices LD, which is not specifically limited here.

[0107] The peripheral circuit is connected to the pixel circuit and is used to input a driving signal to the pixel circuit so as to control the light emitting device LD to emit light. The peripheral circuit may include a gate driving circuit and a light emitting control circuit, and of course, may also include other circuits. The specific structure of the peripheral circuit is not particularly limited here.

[0108] like Figure 2 As shown, in some embodiments of the present disclosure, the above-mentioned circuit layer may include a transistor layer TL and a connection layer CL stacked on the side of the transistor layer TL away from the substrate SU, and the thin film transistor and capacitor of the driving circuit may be located in the transistor layer TL, wherein the thin film transistor may be a top-gate or bottom-gate thin film transistor, and each thin film transistor may include an active layer and a gate arranged in an overlapping manner, and the active layers of each thin film transistor are arranged in the same semiconductor layer; or, the active layers of different thin film transistors may also be distributed in different semiconductor layers. The material of the semiconductor layer may be polysilicon or metal oxide, which is not particularly limited here.

[0109] Taking the top-gate thin film transistor as an example, the transistor layer TL may include a semiconductor layer, a first gate insulating layer, a first gate layer, a second gate insulating layer, a second gate layer and an interlayer dielectric layer stacked in sequence in a direction away from the substrate SU. The active layer of each thin film transistor is located in the semiconductor layer, the gate is located in the gate layer, and the two plates of the capacitor are located in the first gate layer and the second gate layer. The connection layer CL may include at least one source and drain layer and a flat layer. The surface of the flat layer farthest from the substrate SU away from the substrate SU is the surface of the driving backplane BP for setting the light-emitting device LD.

[0110] Each source-drain layer SD is covered by a flat layer PLN to achieve flattening. Through the source-drain layer SD, connection can be achieved between at least some thin film transistors and between thin film transistors and capacitors to transmit drive signals. The type of drive signal and the specific pattern of each film layer depend on the specific composition of the drive circuit and are not specifically limited here. For example, the number of source-drain layer SD and flat layer PLN is one, and the source-drain layer SD is stacked on the surface of the transistor layer TL away from the substrate SU, and the flat layer PLN covers the source-drain layer SD; or, the number of source-drain layer SD and flat layer PLN is two, including a first source-drain layer, a first flat layer, a second source-drain layer, and a second flat layer stacked in sequence in a direction away from the substrate SU, and the second source-drain layer is arranged on the surface of the first flat layer away from the substrate SU. Further, the first source-drain layer may be covered by a passivation layer, and the first flat layer covers the passivation layer.

[0111] like Figure 2 As shown, the light emitting device LD can be stacked on the driving backplane BP, for example, the light emitting device LD is stacked on the surface of the flat layer PLN farthest from the substrate SU. At the same time, the light emitting device LD is located in the display area AA, which can be an OLED (organic light emitting diode) using organic light emitting materials, or a Mini LED (sub-millimeter light emitting diode, size 100μm-200μm), Micro LED (micro light emitting diode, size not greater than 100μm) and LED (light emitting diode, size greater than 200μm) using inorganic light emitting materials, etc., without special limitation here, as long as it can emit light.

[0112] like Figure 2 As shown, taking the light-emitting device LD using OLED as an example, the light-emitting device LD may include a first electrode ANO, a light-emitting layer EL and a second electrode CAT stacked in sequence in a direction away from the driving backplane BP. By applying an electrical signal to the first electrode ANO and the second electrode CAT, the light-emitting layer EL can be stimulated to emit light. The specific light-emitting principle will not be described in detail here.

[0113] The first electrode ANO can be used as an anode, and its material can include conductive materials such as metals and metal oxides, for example, metals such as Ti (titanium), Al (aluminum), Mg (magnesium), Ag (silver), and of course, metal oxides such as ITO (indium tin oxide). At the same time, the first electrode ANO can be a single-layer or multi-layer structure. For example, the first electrode ANO can include a first metal layer, a second metal layer, and a third metal layer stacked in sequence in a direction away from the driving backplane BP. The materials of the first metal layer and the third metal layer are Ti, and the material of the second metal layer is Al.

[0114] The second electrode CAT can be used as a cathode, and its material may include conductive materials such as metals and metal oxides, for example, metals such as Al (aluminum), Mg (magnesium), Ag (silver), and Yb (ytterbium); it may also include metal oxides such as IZO (indium zinc oxide) and ITO; it may also be metal oxides doped with other elements, for example, aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), gallium-doped zinc oxide (GZO), etc. Of course, zinc oxide may also be doped with other elements, or titanium oxide (TiO2) doped with other elements; for example, the second electrode CAT may include a first conductive layer, a second conductive layer, and a third conductive layer stacked in sequence in a direction away from the driving backplane BP, the material of the first conductive layer is one of Al and Mg, or an alloy of the two, the material of the second conductive layer is IZO, and the material of the third conductive layer is Al. 2 O 3 .

[0115] like Figure 3 and Figure 4 As shown, the light-emitting layer EL may include at least one light-emitting sublayer, and one light-emitting sublayer may include a hole transport layer HTL, a light-emitting material layer EML, and an electron transport layer ETL stacked in sequence in a direction away from the driving backplane BP. At the same time, the light-emitting sublayer may also include a hole injection layer HIL and an electron injection layer EIL distributed in a direction away from the driving backplane BP, and the hole transport layer HTL, the light-emitting material layer EML, and the electron transport layer ETL are distributed between the hole injection layer HIL and the electron injection layer EIL in a direction away from the driving backplane BP; at the same time, for multiple light-emitting sublayers, a charge generation layer CGL may be provided between adjacent light-emitting sublayers, and adjacent light-emitting sublayers are electrically connected through the charge generation layer CGL. The specific structure of the light-emitting layer EL is not particularly limited here, as long as it can cooperate with the first electrode ANO and the second electrode CAT to emit light.

[0116] In addition, an electron blocking layer EBL can be set between the hole transport layer HTL and the light-emitting material layer EML to block electrons; alternatively, a light-emitting functional layer Prime can be set between the hole transport layer HTL and the light-emitting material layer EML, which can be made of amines, biphenyls, naphthalenes and other materials, which can reduce potential barriers, block electrons and improve luminous efficiency; a hole blocking layer HBL can also be set between the electron transport layer ETL and the light-emitting material layer EML to block holes.

[0117] In some embodiments of the present disclosure, each light-emitting sublayer in the same light-emitting device LD can emit light, and the light-emitting colors of each light-emitting sublayer in the same light-emitting device LD can be the same, and the brightness can be improved by multiple light-emitting sublayers.

[0118] It should be noted that this document only describes an implementation method of a light emitting device LD with multiple different luminous colors, but the present disclosure does not exclude other situations. For example, different luminous sublayers of the same light emitting device LD have different luminous colors, and different light emitting devices LD have the same luminous colors. In this case, a color filter layer can be provided on the side of the light emitting device LD away from the driving backplane BP. The color filter layer has filter portions of different colors, and a filter portion overlaps with a light emitting device LD, so that color display can be achieved through the colored color filter layer + light emitting device LD.

[0119] like Figure 2 As shown, the display panel may further include a pixel definition layer PDL separating the light emitting devices LD, which may be disposed on the same surface of the driving backplane BP as the light emitting devices LD. For example, the pixel definition layer PDL may be disposed on the surface of the flat layer farthest from the substrate SU and away from the substrate SU together with the first electrode ANO. At the same time, the thickness of the pixel definition layer PDL is greater than the thickness of the first electrode ANO, and the pixel definition layer PDL has a pixel opening PH exposing each first electrode ANO, and one pixel opening PH exposes one first electrode ANO. At the same time, one pixel opening PH is smaller than the first electrode ANO exposed therein, that is, the pixel definition layer PDL extends to the surface of the first electrode ANO away from the driving backplane BP, covering the edge of the first electrode ANO.

[0120] like Figure 2 As shown, the light-emitting layer EL and the second electrode CAT are sequentially stacked on the first electrode ANO in the pixel opening PH. In some embodiments, the light-emitting layer EL is a discontinuous structure, and the light-emitting layers EL of each light-emitting device LD are independently arranged at intervals, and the light-emitting colors of different light-emitting devices LD can be different; the second electrodes CAT of different light-emitting devices LD can be an integrated structure or conductively connected.

[0121] like Figure 2 As shown, each light-emitting device LD is defined by the pixel definition layer PDL, wherein the range of the pixel opening PH is the range of the light-emitting device LD, that is, the shape and size of the orthographic projection of the pixel opening PH on the substrate SU are the shape and size of the orthographic projection of the light-emitting device LD on the substrate SU. At the same time, the shape of the pixel opening PH is the shape of its orthographic projection on the driving backplane BP and the substrate SU, etc., and the shape can be a polygon such as a rectangle, or a circle, etc. The definition of the shape and size of the light-emitting device LD in this article is explained based on the shape and size of the pixel opening PH. For example, the size of the light-emitting device LD is the size of its pixel opening PH.

[0122] The above-mentioned light emitting device LD includes at least two light emitting devices LD with different luminous colors. Each light emitting device LD can be divided into multiple light emitting units. One light emitting unit includes multiple light emitting devices LD, and at least some of the light emitting devices LD in the same light emitting unit have different luminous colors.

[0123] like Figure 2 As shown, in some embodiments of the present disclosure, each light emitting device LD includes a first light emitting device LD1, a second light emitting device LD2 and a third light emitting device LD3 with different light emitting colors. For example, the first light emitting device LD1 emits red light, the second light emitting device LD2 emits green light, and the third light emitting device LD3 emits blue light.

[0124] There are multiple light-emitting devices LD of each color, but the numbers of light-emitting devices LD of different colors are not necessarily the same. For example, a light-emitting unit may include a first light-emitting device LD1, a second light-emitting device LD2 and a third light-emitting device LD3; or, a light-emitting unit may include a first light-emitting device LD1, two second light-emitting devices LD2 and a third light-emitting device LD3.

[0125] In some embodiments of the present disclosure, since the lifespan of the light-emitting layer EL of the light-emitting devices LD of different light-emitting colors is different, the degree of decay of the light-emitting efficiency is different as the light-emitting time increases. In order to ensure different light-emitting efficiencies, the size of the light-emitting device LD can be different, and a larger size can be used to make up for the lack of light-emitting efficiency. For example, under the same light-emitting time, in terms of the degree of decay of the light-emitting efficiency, the material that emits blue light is smaller than the material that emits red light, and the material that emits red light is smaller than the material that emits green light. Therefore, the size of the third light-emitting device LD3 can be larger than the size of the first light-emitting device LD1, and the size of the first light-emitting device LD1 can be larger than the size of the second light-emitting device LD2, so that the brightness of the three can be uniformly improved.

[0126] Of course, the sizes of the first light emitting device LD1 and the second light emitting device LD2 may also be the same, and both are larger than the second light emitting device LD2, or the sizes of the light emitting devices LD1 and LD2 may be the same.

[0127] like Figure 2 As shown, in order to prevent corrosion from external water vapor, the display panel may further include an encapsulation layer TFE, which may cover each light-emitting device LD. For example, the encapsulation layer TFE may be encapsulated in a thin film manner, which may include a first inorganic layer CVD1, an organic layer IJP, and a second inorganic layer CVD2, wherein:

[0128] The first inorganic layer CVD1 can cover each light emitting device LD, that is, the first inorganic layer CVD1 can cover the surface of the second electrode CAT away from the driving backplane BP; the material of the first inorganic layer CVD1 may include inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide.

[0129] The organic layer IJP may be disposed on the surface of the first inorganic layer CVD1 away from the driving backplane BP, and the boundary of the organic layer IJP may be limited to the inner side of the boundary of the first inorganic layer CVD1 by the blocking dam located in the peripheral area WA. At the same time, the boundary of the orthographic projection of the organic layer IJP on the driving backplane BP may be located in the peripheral area WA, ensuring that the organic layer IJP can cover each light-emitting device LD.

[0130] The second inorganic layer CVD2 can cover the organic layer IJP and the first inorganic layer CVD1 not covered by the organic layer IJP, and can block water and oxygen intrusion through the second inorganic layer CVD2, and achieve planarization through the organic layer IJP having fluidity before curing. The material of the second inorganic layer CVD2 may include inorganic insulating materials such as silicon nitride and silicon oxide.

[0131] When forming the light-emitting layer EL of the display panel, a mask is required to form the light-emitting material on the first electrode ANO through processes such as evaporation, and in order to achieve requirements such as high resolution, high brightness, long life and low power consumption, the mask usually adopts FFM (Fine Metal Mask) to realize the array arrangement of the light-emitting layer EL and the independent light emission of the light-emitting device LD. However, due to the limitations of materials and meshing processes, the larger the size of the display panel, the greater the amount of droop of the mask under the action of gravity, and the worse the PPA (Pixel Position Accuracy, reflecting the difference between the opening position of the mask and the pixel position), resulting in a significant increase in the risk of poor evaporation color mixing, and thus the mask limits the increase in pixel aperture rate and brightness.

[0132] To this end, the inventors have provided a solution for forming the light-emitting layer EL without using an external mask, thereby eliminating the high cost of mask design and production and the cost of purchasing equipment such as a net-stretching device, which is described in detail below:

[0133] like Figure 2 As shown, a truncation layer CSL may be provided on the surface of the pixel definition layer PDL away from the driving back plate BP, and a plurality of truncation holes CH corresponding to and overlapping each pixel opening PH may be provided on the truncation layer CSL, that is, one light emitting device LD is exposed by another truncation hole CH; further, a truncation groove CHs surrounding the pixel opening PH overlapping therewith may be provided on the side wall of the truncation hole CH to form an undercut structure, that is, the side wall of the truncation groove CHs away from the driving back plate BP is a cantilever structure. When forming the light emitting layer EL, the truncation layer CSL may be used as a mask to evaporate the light emitting material, and the light emitting material cannot be continuous due to the existence of the truncation groove CHs, and is disconnected at the truncation groove CHs, thereby forming a light emitting layer EL of a light emitting device LD in the truncation hole CH, and the light emitting layer EL in the adjacent truncation hole CH is truncated by the truncation groove CHs, so as to realize independent light emission.

[0134] When the second electrode CAT is formed, the second electrode CAT is also disconnected at the truncation groove CHs, and the second electrode CAT in the truncation hole CH can contact the truncation layer CSL, and the truncation layer CSL is at least partially a conductive structure, so that at least part of the second electrode CAT can be electrically connected through the truncation layer CSL, so as to simultaneously transmit signals to the second electrodes CAT of multiple light-emitting devices LD.

[0135] In order to facilitate the formation of the truncation groove CHs, the truncation layer CSL can be a multi-layer structure, and at least two layers of different materials can be etched by wet etching to form the above-mentioned undercut structure, that is, to form the truncation groove CHs. Of course, the truncation layer CSL can also be a single-layer structure, and the truncation groove CHs can be directly opened on the side wall of the truncation hole CH.

[0136] like Figure 2 As shown, in some embodiments of the present disclosure, the cut-off layer CSL includes a conductive layer CS1 and a shielding layer CS2 stacked in sequence in a direction away from the driving backplane BP, wherein:

[0137] The truncation groove CHs is an annular groove surrounding the pixel opening PH, and it is located in the conductive layer CS1, that is, the truncation groove CHs causes the conductive layer CS1 to retract relative to the shielding layer CS2 to form an undercut structure, and a portion of the shielding layer CS2 is a cantilever structure. The shielding layer CS2 and the conductive layer CS1 are made of different materials. For example, the material of the conductive layer CS1 includes metals or alloys such as Cu (copper), Ag, Al, Mo (molybdenum), AlNd (aluminum neodymium alloy), and may also include metal oxides such as ITO and IZO; the material of the shielding layer SC2 may include inorganic insulating materials such as silicon oxide and silicon nitride. The truncation hole CH may penetrate the shielding layer CS2 and the conductive layer CS1, overlap with the pixel opening PH, and be not less than the pixel opening PH to avoid blocking the light-emitting device LD.

[0138] The truncation layer CSL formed with the truncation hole CH can be etched by wet etching to shrink the conductive layer CS1, thereby forming a truncation groove CHs. The truncation groove CHs has two opposite side walls and a bottom surface connecting the two side walls. The two side walls are distributed in a direction away from the driving backplane BP, one of the side walls is the surface of the pixel definition layer PDL away from the driving backplane BP, and the other side wall is the surface of the shielding layer CS2 close to the driving backplane BP.

[0139] The cut-off layer CSL can be used to replace the specially set mask. When the light-emitting material is evaporated to form the light-emitting layer EL, the light-emitting material is disconnected at the cut-off groove CHs and cannot be continuously extended, so that the light-emitting layer EL is patterned through the cut-off hole CH and the cut-off groove CHs, saving the cost of the mask. At the same time, the cut-off groove CHs will also disconnect the second electrode CAT, but the second electrode CAT in the cut-off hole CH can extend into the cut-off groove CHs and contact the bottom surface of the cut-off groove CHs, that is, contact the conductive layer CS1, so that the second electrodes CAT of different light-emitting devices LD can be electrically connected through the conductive layer CS1, so as to simultaneously transmit the same common power signal to multiple light-emitting devices LD.

[0140] The evaporated light-emitting material is deposited from the side of the cut layer CSL away from the driving back plate BP toward the cut layer CSL. Furthermore, in some embodiments, the depth of the cut groove CHs can be reduced in the direction away from the driving back plate BP, that is, the inner wall of the cut groove CHs shrinks in the direction away from the driving back plate BP, which can prevent the light-emitting material from continuously passing through the cut groove CHs to the greatest extent, thereby ensuring that the light-emitting layer EL can be disconnected at the cut groove CHs.

[0141] In addition, if Figure 2 As shown, the first inorganic layer CVD1 of the encapsulation layer TFE can cover the second electrode CAT and the cut-off layer CSL, and because the light-emitting layer EL and the second electrode CAT have filled the cut-off groove CHs to a certain extent, the first inorganic layer CVD1 can extend continuously at the cut-off groove CHs without being disconnected, thereby preventing external water vapor and oxygen from corroding the light-emitting device LD.

[0142] Based on the above-mentioned embodiments, the light emitting layer EL and the second electrode CAT of the same light emitting device LD can be located within a range surrounded by a cut-off hole CH and stacked on the first electrode ANO corresponding to the cut-off hole CH.

[0143] The inventors also found that when the cut-off layer CSL is used to pattern the light-emitting layer EL, only the light-emitting layer EL of the light-emitting device LD of one color can be formed each time, so it is necessary to form light-emitting layers EL of various colors in sequence; and when forming light-emitting devices LD of other colors, it is necessary to remove the light-emitting layers EL remaining when forming light-emitting devices LD of other colors; but these residues are difficult to completely remove, especially in the cut-off groove CHs, because it has a certain depth, it is easier to have residues inside, and the greater the depth, the easier it is to have residues, but if the depth is too small, it is not easy to cut off the light-emitting layer EL. For this reason, the inventors propose to limit the depth of the cut-off groove CHs according to the formation order of light-emitting layers EL of different colors, and reduce the influence of residues. Specifically, for any two light-emitting devices LD of different light-emitting colors, the depth of the cut-off groove CHs of the cut-off hole CH overlapped by the pixel opening PH of the two can be different, and the depth of the cut-off groove CHs corresponding to the light-emitting device LD formed first can be greater than the cut-off groove CHs corresponding to the light-emitting device LD formed later, because the cut-off groove CHs formed later is more likely to have more light-emitting material remaining.

[0144] like Figure 2 As shown, in some embodiments of the present disclosure, the light emitting device LD includes a first light emitting device LD1 that emits red light, a second light emitting device LD2 that emits green light, and a third light emitting device that emits blue light. Organic light emitting materials of different colors have different sensitivities to temperature, wherein red light emitting materials are less affected by high temperature, green light emitting materials are second, and blue light emitting materials are most sensitive to high temperature. When light emitting devices LD of different colors are formed in sequence, the light emitting materials formed first need to experience multiple high temperatures. Therefore, when forming light emitting devices LD of three colors, the first light emitting device LD1 can be formed first, then the second light emitting device LD2, and finally the third light emitting device LD3.

[0145] For the convenience of description, the depth of the truncation groove CHs of the truncation hole CH overlapping with the pixel opening PH corresponding to the first light-emitting device LD1 can be taken as the first depth S1; the depth of the truncation groove CHs of the truncation hole CH overlapping with the pixel opening PH corresponding to the second light-emitting device LD2 can be taken as the second depth S2; the depth of the truncation groove CHs of the truncation hole CH overlapping with the pixel opening PH corresponding to the third light-emitting device LD3 can be taken as the third depth S3.

[0146] Based on the above description, the first depth S1 can be greater than the second depth S2, and the second depth S2 can be greater than the third depth S3, that is, the depth of the truncated groove CHs corresponding to the third light-emitting device LD3 formed last is the smallest, and the depth of the truncated groove CHs corresponding to the first light-emitting device LD1 formed first is the largest. Further, the first depth S1 can be not less than 0.3μm and not more than 1.5μm, the second depth S2 can be not less than 0.3μm and not more than 1.2μm; the third depth S3 can be not less than 0.3μm and not more than 1μm. This can prevent the shielding layer CS2 from collapsing at the truncated groove CHs, and ensure that the truncated groove CHs can cut off the light-emitting layer EL and can compress the space of the residual light-emitting material to the greatest extent.

[0147] The depth of the above-mentioned truncation groove CHs is the maximum distance between the bottom surface and the side wall of the truncation groove CHs. If the bottom surface shrinks in the direction away from the driving back plate BP, the depth is the distance between the boundary of the bottom surface close to the driving back plate BP and the side wall of the truncation groove CHs close to the boundary.

[0148] With respect to the above-mentioned embodiments, the inventors found that when forming the truncation groove CHs on the side wall of the truncation hole CH, a wet etching process is usually used, but when etching the truncation layer CSL, the first electrode ANO is easily damaged. Therefore, the inventors proposed a new structure of the pixel definition layer PDL, which protects the first electrode ANO when forming the truncation groove CHs, and removes the pixel definition layer PDL covering the first electrode ANO when forming the light-emitting layer EL, exposing the first electrode ANO, and then forming the light-emitting layer EL.

[0149] like Figure 2 As shown, in some embodiments of the present disclosure, the pixel definition layer PDL may include a definition layer PD1 and a protection layer PD2, wherein:

[0150] The limiting layer PD1 can be arranged on the same surface of the driving backplane BP as the light-emitting device LD. For example, the limiting layer PD1 can be arranged on the surface of the flat layer PLN farthest from the substrate SU and away from the substrate SU together with the first electrode ANO. At the same time, the limiting layer PD1 can be made of resin or other organic materials, and the thickness of the limiting layer PD1 is greater than the thickness of the first electrode ANO, and the limiting layer PD1 has a limiting opening that exposes each first electrode ANO, and one limiting opening exposes one first electrode ANO. At the same time, one limiting opening is smaller than the first electrode ANO exposed by it, that is, the limiting layer PD1 extends to the surface of the first electrode ANO away from the driving backplane BP, covering the edge of the first electrode ANO.

[0151] The protective layer PD2 may cover the limiting layer PD1 and extend to the surface of the first electrode ANO away from the driving backplane BP, that is, extend to the limited opening of the limiting layer PD1. The pixel opening PH is opened in the protective layer PD2, and the sidewalls of the limited opening of the limiting layer PD1 surround the outside of the pixel opening PH. At the same time, the material of the protective layer PD2 includes inorganic materials that are not easily corroded, such as silicon oxide, silicon nitride, silicon oxynitride, and aluminum oxide. Before forming the truncation groove CHs, the protective layer PD2 may cover the first electrode ANO, that is, no pixel opening PH is opened, but the thickness of the protective layer PD2 may be less than the limiting layer PD1, so that it is recessed at the limited opening of the limiting layer PD1. When forming the truncation groove CHs, the protective layer PD2 may protect the first electrode ANO to prevent the etching solution from corroding the first electrode ANO. After forming the truncation groove CHs, before forming the light-emitting layer EL, the protective layer PD2 covering the first electrode ANO may be removed to form the pixel opening PH.

[0152] Further, such as Figure 2 As shown, in some embodiments of the present disclosure, the protection layer PD2 includes a first protection sub-layer PD21 and a second protection sub-layer PD22, wherein:

[0153] The first protective sublayer PD21 covers the limiting layer PD1 and extends into the limiting opening, that is, extends to the surface of the first electrode ANO away from the driving backplane BP, and the first protective sublayer PD21 exposes the first electrode ANO, that is, the first protective sublayer PD21 has a protective opening exposing the first electrode ANO, and the protective opening is smaller than the limiting opening. The material of the first protective sublayer PD21 may include corrosion-resistant inorganic materials such as silicon oxide, aluminum oxide and silicon nitride, and the thickness may be 500 angstroms to 2000 angstroms.

[0154] The second protective sublayer PD22 may cover the first protective sublayer PD21 and extend to the surface of the first electrode ANO away from the driving backplane BP, that is, extend to the protective opening. The pixel opening PH may be opened in the second protective sublayer PD22. The material of the second protective sublayer PD22 may include corrosion-resistant inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride, and the thickness may be 500 angstroms to 1500 angstroms.

[0155] Under the same etching process, the etching rate of the first protective sublayer PD21 is lower than the etching rate of the second protective sublayer PD22. For example, the ratio of the etching rate of the second protective sublayer PD22 to the etching rate of the first protective sublayer PD21 is greater than 2. Therefore, the first protective sublayer PD21 can be used as an etching barrier for the second protective sublayer PD22 to protect the limiting layer PD1 of the organic material. When forming the truncation groove CHs, the second protective sublayer PD22 covers the first electrode ANO, and the first protective sublayer PD21 exposes the first electrode ANO. The first electrode ANO is protected by the second protective sublayer PD22. After the truncation groove CHs is formed, before the light-emitting layer EL is formed, a pixel opening PH exposing the first electrode ANO can be opened in the second protective sublayer PD22.

[0156] like Figure 2 As shown, in some embodiments of the present disclosure, the display panel may further include a light-emitting extension portion Es, which is stacked on a surface of the truncation layer CSL away from the driving backplane BP and is located between two adjacent light-emitting devices LD; the second electrode CAT includes an electrode extension portion CAs covering the light-emitting extension portion Es and disconnected from the second electrode CAT;

[0157] With the adjacent first light emitting device LD1 and second light emitting device LD2: the light emitting extension portion Es includes a first light emitting extension portion Es1 which is arranged on the same layer as the light emitting layer EL of the first light emitting device LD1 and is disconnected, and a second light emitting extension portion Es2 which is arranged on the same layer as the light emitting layer EL of the second light emitting device LD2 and is disconnected; the boundary of the first light emitting extension portion Es1 away from the first light emitting device LD1 is butted against the boundary of the second light emitting extension portion Es2 away from the second light emitting device LD2, that is, the first light emitting extension portion Es1 and the second light emitting extension portion Es2 do not overlap.

[0158] It should be noted that the "same-layer arrangement" of A and B in this article means that A and B belong to different continuous or disconnected regions in the same film layer, and each region can be formed at the same time. The light-emitting extension portion Es can be regarded as the portion of the light-emitting layer EL that has not been removed, and the electrode extension portion CAs can be regarded as the portion of the second electrode CAT that has not been removed.

[0159] In addition, although the above embodiment is described based on the example that the light-emitting extension portion Es and the electrode extension portion Cas exist between the first light-emitting device LD1 and the second light-emitting device LD2, the first light-emitting device LD1 and the second light-emitting device LD2 here do not specifically refer to the light-emitting devices LD that emit red light and green light in the above example. Here, they refer to any two adjacent light-emitting devices LD, rather than specific two light-emitting devices LD.

[0160] like Figure 2As shown, in some embodiments of the present disclosure, the side walls of the electrode extension portion CAs and the light-emitting extension portion Es covered by it may shrink in a direction away from the driving backplane BP, that is, gradually narrow. For example, the cross-section of the electrode extension portion CAs and the light-emitting extension portion Es covered by it along a plane perpendicular to the driving backplane BP may be trapezoidal.

[0161] The embodiments of the present disclosure also provide a method for manufacturing a display panel, which may be a display panel of any of the above embodiments, and the specific structure of the display panel will not be described in detail here. In the manufacturing method, light-emitting devices LD of different colors can be formed in sequence, and the truncated grooves CHs can also be formed in batches or simultaneously. There are multiple implementation methods. For the convenience of description, the manufacturing method can be divided into two categories according to the formation timing of the truncated grooves CHs. The first category is that the truncated grooves CHs are formed in batches, wherein the first category of manufacturing methods can be divided into at least two types, and the second category is that each truncated groove CHs is formed simultaneously, which is described in detail below:

[0162] like Figure 5-Figure 24 As shown, the first type of the first manufacturing method includes steps S10 to S50, wherein:

[0163] Step S110, forming a driving backplane;

[0164] Step S120, forming first electrodes of a plurality of light-emitting devices on the driving backplane;

[0165] Step S130, forming a defining layer covering each first electrode, wherein the defining layer has defining openings corresponding to and exposing each first electrode;

[0166] Step S140, forming a protective layer covering the limiting layer and the first electrode exposed by the defined opening, wherein the material of the protective layer includes an inorganic material;

[0167] Step S150, forming a truncation layer having a plurality of truncation holes on a surface of the protection layer away from the driving back plate, wherein each truncation hole overlaps with each limiting opening in a one-to-one correspondence; each truncation hole is divided into at least n groups, where n is a positive integer not less than 2;

[0168] Step S160, sequentially executing device steps for each group of truncated holes; the device steps include steps S161 to S162, wherein:

[0169] Step S161, forming a truncation groove on the side wall of the truncation hole, surrounding and overlapping the limiting opening;

[0170] Step S162, removing at least a portion of the protective layer covering the first electrode in the cut-off hole to expose the first electrode;

[0171] Step S163, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off hole, wherein the light-emitting layer is disconnected at the cut-off groove;

[0172] Step S164, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0173] Through the first type and first manufacturing method of the above-mentioned embodiment, the cut-off layer CSL can be used to pattern the light-emitting layer EL, avoiding the use of a high-cost mask plate, which is beneficial to reducing production costs; at the same time, when the cut-off groove CHs is formed, the first electrode ANO is protected by the protective layer PD2 to prevent it from being corroded, thereby reducing the risk of abnormal light emission and helping to improve product yield.

[0174] The following is an exemplary description of the steps of the first type of manufacturing method described above:

[0175] In step S110 and step S120, a driving circuit can be prepared on the substrate SU by processes such as coating, exposure and etching to obtain a driving backplane BP, the specific structure of which can refer to the embodiment of the display panel above. The first electrode ANO of each light-emitting device LD can be prepared on the driving backplane BP by photolithography.

[0176] like Figure 5 As shown, in step S130, a limiting layer PD1 of the pixel definition layer PDL can be formed on the driving backplane BP and patterned by exposure and other processes to form a limiting opening LH that limits and exposes the first electrode ANO; the limiting layer PD1 can be made of resin such as photoresist or other organic materials.

[0177] like Figure 6 and Figure 7 As shown, in step S140, a protection layer PD2 of the pixel definition layer PDL may be formed, wherein:

[0178] The protective layer PD2 may be a single layer or a multi-layer structure, for example:

[0179] In some embodiments of the present disclosure, step S140 may include steps S140 to S143, wherein:

[0180] Step S141 : forming a first protection sublayer covering the defining layer and the first electrode exposed by the defined opening.

[0181] like Figure 6 As shown, the first protection sub-layer PD21 of an inorganic material may be formed by plasma enhanced chemical vapor deposition (PECVD) or other processes.

[0182] Step S142 , patterning the first protection sublayer, removing the first protection sublayer defining the bottom of the opening, so that the first protection sublayer exposes the first electrode.

[0183] like Figure 6 As shown, the first protection sublayer PD21 may be patterned by a photolithography process to obtain a protection opening SH exposing the first electrode ANO.

[0184] Step S143 , forming a second protection sublayer covering the first protection sublayer and the first electrode exposed by the first protection sublayer.

[0185] like Figure 7 As shown, the second protection sublayer PD22 may be formed by plasma enhanced chemical vapor deposition or other processes, and the second protection sublayer PD22 covers the region of the first electrode ANO exposed by the protection opening.

[0186] If the protection layer PD2 is a single-layer structure, the protection layer covering the limiting layer PD1 and the first electrode ANO may be directly formed.

[0187] like Figure 8 As shown, in step S150, a truncation layer CSL may be formed on the pixel definition layer PDL and patterned to form a plurality of truncation holes CH, wherein one truncation hole CH overlaps with one defined opening. Meanwhile, when performing step S150, the protection layer PD2 keeps covering the first electrode ANO to serve as an etching stop layer to protect the first electrode ANO.

[0188] For the cut-off layer CSL including the conductive layer CS1 and the blocking layer CS2, step S150 may include steps S151 to S153, wherein:

[0189] Step S151, forming a conductive layer covering the protective layer.

[0190] The conductive layer CS1 may be formed by a sputtering process, and its material may be a conductive material such as metal or metal oxide.

[0191] Step S152, forming a shielding layer covering the conductive layer; the shielding layer and the conductive layer are made of different materials.

[0192] The shielding layer CS2 is formed by a plasma enhanced chemical vapor deposition process.

[0193] Step S153: opening a plurality of truncation holes penetrating the shielding layer and the conductive layer, wherein each truncation hole overlaps with each defined opening in a one-to-one correspondence.

[0194] like Figure 8As shown, patterning can be achieved through exposure and etching processes to form a cut-off hole CH exposing the protective layer PD2. The materials of the conductive layer CS1 and the shielding layer CS2 can refer to the above display panel implementation, which will not be described in detail here.

[0195] In some embodiments of the present disclosure, the light emitting device LD includes n light emitting devices LD of different light emitting colors, and a cut-off hole CH overlaps with a light emitting device LD. Accordingly, each cut-off hole CH can be divided into at least n groups, and a group of cut-off holes CH corresponds to a light emitting device LD of one color, and n is a positive integer not less than 2. Figure 2 and Figure 8 As shown, for example, the light-emitting device LD includes a first light-emitting device LD1, a second light-emitting device LD2 and a third light-emitting device LD3, n=3, and the truncated holes CH are divided into 3 groups, the truncated holes CH corresponding to the first light-emitting device LD1 are the first group, the truncated holes CH corresponding to the second light-emitting device LD2 are the second group, and the truncated holes CH corresponding to the third light-emitting device LD3 are the third group.

[0196] In step S160, the device step is executed for each group of cut-off holes CH in sequence, that is, the device step is executed for each group of cut-off holes CH. Each time the device step is executed, a light-emitting device LD is formed in a group of cut-off holes CH. Therefore, after executing the device step n times, all light-emitting devices LD can be formed.

[0197] The above-mentioned device steps may include step S161-step S162, wherein:

[0198] Step S161 , forming a truncation groove on the side wall of the truncation hole, surrounding and overlapping the defined opening.

[0199] like Fig. 9 As shown, the structures of the cut-off layer CSL and the cut-off groove CHs can refer to the above display panel implementation, and will not be described in detail here. Before forming the cut-off groove CHs, the area outside the cut-off groove CHs targeted by the device step can be covered with a resist layer P1, and the material of the resist layer P1 can be photoresist.

[0200] like Fig.10 As shown, a group of truncated holes CH corresponding to the light-emitting devices LD of the same luminous color can be etched inward through exposure and wet etching processes. For example, for the truncated layer CSL having a conductive layer CS1 and a shielding layer CS2, the etching liquid can etch the conductive layer CS1 of the conductive material in the truncated hole CH, while the shielding layer CS of the inorganic material is not etched or is etched at a lower etching rate than the conductive layer CS1, thereby forming truncated grooves CHs on the sidewalls of the truncated hole CH. At the same time, the other groups of truncated holes CH are covered and filled by the anti-etching layer P1, so that truncated grooves CHs are not formed.

[0201] Each time the device step is executed, the truncated hole CH corresponding to the light-emitting device LD of the same color is targeted, and when the device step is executed for the truncated holes CH corresponding to different light-emitting devices LD, the depth of the shrinkage etching in step S161 can be different. As mentioned above, the first depth can be greater than the second depth, and the second depth can be greater than the third depth, that is, the depth of the truncated groove CHs corresponding to the third light-emitting device LD3 formed last is the smallest, and the depth of the truncated groove CHs corresponding to the first light-emitting device LD1 formed first is the largest. Further, the first depth can be not less than 0.3μm and not more than 1.5μm, the second depth can be not less than 0.3μm and not more than 1.2μm; the third depth can be not less than 0.3μm and not more than 1μm. This can prevent the shielding layer CS2 from collapsing at the truncated groove CHs, and ensure that the truncated groove CHs can cut off the light-emitting layer EL and can compress the space of the residual light-emitting material to the greatest extent.

[0202] In the process of forming the truncation groove CHs, the first electrode ANO is always covered by the protective layer PD2, that is, the bottom surface of the truncation hole CH is the surface of the protective layer PD2 away from the driving back plate BP, rather than the surface of the first electrode ANO away from the driving back plate BP. The protective layer PD2 can act as an etching barrier to protect the first electrode ANO from being etched. For example, for the protective layer PD2 including the first protective sublayer PD21 and the second protective sublayer PD22 mentioned above, it is the second protective sublayer PD22 that protects the first electrode ANO.

[0203] Step S162 , removing at least a portion of the protection layer covering the first electrode in the cut-off hole to expose the first electrode.

[0204] like Fig.10 As shown, for the truncation hole CH in which the truncation groove CHs is formed in step S161, the exposed protection layer PD2 can be removed, thereby exposing the first electrode ANO. For example, the area outside the truncation hole CH with the truncation groove CHs can be covered by the resist layer P2, thereby exposing the truncation hole CH with the truncation groove CHs; the material of the resist layer P2 can be photoresist; and then, through exposure and dry etching processes, at least a portion of the protection layer PD2 exposed by the truncation hole CH is removed, thereby exposing the pixel first electrode ANO, and the removed protection layer PD2 can be the second protection sublayer PD22.

[0205] Step S163 , forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off hole, wherein the light-emitting layer is disconnected at the cut-off groove.

[0206] like Fig.11As shown, a light-emitting layer EL of one color can be formed on the truncation layer CSL after executing step S162 by vacuum evaporation equipment, and the light-emitting layer EL is disconnected at the truncation groove CHs. At the same time, the light-emitting layer EL also extends into the truncation hole CH where the truncation groove CHs is not formed, and extends continuously, but because the first electrode ANO corresponding to the truncation hole CH where the truncation groove CHs is not formed is still covered by the protective layer PD2, the light-emitting layer EL does not contact the first electrode ANO covered by the protective layer PD2. In this way, it can be ensured that the light-emitting layer EL only contacts the first electrode ANO exposed by the same group of truncation holes CH, so as to form light-emitting devices LD of the same color, and the light-emitting layer EL in other groups of truncation holes CH will not form light-emitting devices LD.

[0207] Step S164, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0208] like Fig.11 As shown, the second electrode CAT covering the light-emitting layer EL can be formed by a vacuum evaporation device or the like, and the second electrode CAT can be disconnected at the cut groove CHs, and form a light-emitting device LD with the light-emitting layer EL and the first electrode ANO within the range surrounded by the cut groove CHs. At the same time, the disconnected second electrode CAT can extend into the cut groove CHs and contact the bottom surface of the cut groove CHs, that is, contact the conductive layer CS1, thereby achieving electrical connection with the conductive layer CS1. In addition, the second electrode CAT extends continuously in the cut hole CH where the cut groove CHs is not formed, and although it covers the light-emitting layer EL, due to the presence of the protective layer PD2, no light-emitting device LD is formed in these cut holes CH.

[0209] The above device steps can be performed n times, each time for a group of truncated holes CH, to form a light-emitting device LD of one color, thereby forming n light-emitting devices LD with different luminous colors. In some embodiments of the present disclosure, n is equal to 3, and the light-emitting device LD includes a first light-emitting device LD1, a second light-emitting device LD2, and a third light-emitting device LD3 with different luminous colors. Accordingly, the truncated holes CH include a first group of truncated holes CH for forming the first light-emitting device LD1, a second group of truncated holes CH for forming the second light-emitting device LD2, and a third group of truncated holes CH for forming the third light-emitting device LD3. The above device steps can be performed for the first group of truncated holes CH first, then the device steps are performed for the second group of truncated holes CH, and finally the device steps are performed for the third group of truncated holes CH.

[0210] Figure 13-Figure 17 It is a schematic diagram of each step in the second execution of the device step. Fig.15 The middle resist layer P4 is used to protect the already formed first light emitting device LD1 and the cut-off hole CH where the third light emitting device LD3 does not need to be formed temporarily.

[0211] Figure 18-Figure 23 Schematic diagram of each step in the third execution of the device step. Fig.18 The middle anti-etching layer P5 is used to protect the second light-emitting device LD2 that has been formed. When removing the light-emitting layer EL and the second electrode CAT in the third group of cutoff holes CH, the film layer stacked on the first light-emitting device LD1 can be thinned at the same time, that is, the light-emitting layer EL and the second electrode CAT stacked on the first light-emitting device LD1 can be removed.

[0212] In addition, each time the device step is performed, the light-emitting layer EL and the second electrode CAT are formed in the truncation hole CH where the truncation groove CHs is not formed, and the light-emitting layer EL and the second electrode CAT are also formed on the surface of the truncation layer CSL away from the driving backplane BP, but only the light-emitting layer EL and the second electrode CAT that form the light-emitting device LD with the first electrode ANO participate in the light emission. After the device step is performed multiple times, the light-emitting layer EL and the second electrode CAT formed multiple times will be accumulated in the same area, with a large thickness and a step difference. Therefore, before each device step is performed, the light-emitting layer EL and the second electrode CAT that do not form the light-emitting device LD after the previous device step can be removed. For example, in some embodiments of the present disclosure, before the device step is performed for the i+1th group of truncation holes, the manufacturing method further includes:

[0213] Step S170, removing the second electrode and the light-emitting layer formed in the (i+1)th group of cut-off holes when performing the device step for the i-th group of cut-off holes, 1≤i≤n.

[0214] like Fig.13 and Fig.14 As shown, when the device step is performed on the i-th group, the light-emitting layer EL and the second electrode CAT will be formed in the i-th group and the truncated holes CH outside the i-th group and on the surface of the truncated layer CSL away from the driving backplane BP, but only the i-th group of truncated holes CH has a truncated groove CHs, and a light-emitting device LD that can emit light is formed; before the light-emitting device LD is formed in the i+1 group of truncated holes CH through the device step, a resist layer P3 can be formed by a process such as low-temperature exposure, and the resist layer P3 can cover the i-th group of truncated holes CH and the light-emitting devices LD therein, as well as the truncated holes CH before the i-th group of truncated holes CH and the light-emitting devices LD therein, that is, the light-emitting device LD that has been formed is covered with the resist layer P3 to protect the light-emitting device LD; subsequently, the light-emitting layer EL and the second electrode CAT of the i+1 group of truncated holes CH can be removed by a process such as dry etching to expose the protective layer PD2 in the i+1 group of truncated holes CH.

[0215] After performing the above step S170, the surface of the cut-off layer CSL away from the driving backplane BP may have a light-emitting layer EL and a second electrode CAT, but due to the existence of the cut-off groove CHs, the remaining light-emitting layer EL and the second electrode CAT are disconnected from the light-emitting device LD. Further, after performing the above device steps n times, the surface of the cut-off layer CSL away from the driving backplane BP may have a light-emitting layer EL of multiple colors, and the surface may have a light-emitting layer EL of two colors in the area between two adjacent cut-off holes CH, which is the same as the color of the light-emitting device LD in the two cut-off holes CH.

[0216] In some embodiments of the present disclosure, the device step may further include:

[0217] Step S165 , forming a first inorganic layer covering the second electrode, wherein the first inorganic layer extends continuously at the truncation groove.

[0218] like Fig.12 As shown, the first inorganic layer CVD1 can be formed by low-temperature chemical vapor deposition or other processes. The first inorganic layer CVD1 can cover the second electrode CAT, and due to the stacking of the light-emitting layer EL and the second electrode CAT, the first inorganic layer CVD1 can extend continuously at the truncation groove CHs, so that the formed light-emitting device LD can be protected by the first inorganic layer CVD1 to prevent water vapor and oxygen from corroding the light-emitting device LD. Each time a device step is performed, a first inorganic layer CVD1 is formed.

[0219] like Fig.24 As shown, in some embodiments of the present disclosure, the manufacturing method further includes:

[0220] Step S100: After forming the last group of light emitting devices LD, the last group of light emitting devices LD may be covered with an anti-etching layer P7, and the light emitting layer EL, the second electrode CAT and the first inorganic layer CVD1 on the previously formed light emitting devices LD are removed to reduce the step difference.

[0221] Furthermore, step S170 may further include: removing the first inorganic layer CVD1 formed in the (i+1)th group of cut-off holes CH when performing the device step for the i-th group of cut-off holes, and removing it simultaneously with the light-emitting layer EL and the second electrode CAT by dry etching or other processes.

[0222] In some embodiments of the present disclosure, each time the device step is performed, the first inorganic layer CVD1 can be formed, and part of the first inorganic layer CVD1 will be removed in step S170. After performing the device step n times, the first inorganic layer CVD1 formed in each device step and not removed can be used as a whole to cover each light-emitting device LD. At the same time, the first inorganic layer CVD1 can be a single-layer structure, and its thickness can be 1.5 times the thickness of the conductive layer CS1; of course, the first inorganic layer CVD1 can also be a multi-layer structure, and the thickness range can be 400nm-1200nm.

[0223] In some embodiments of the present disclosure, after performing the device steps for the nth group of truncation holes CH, that is, after performing the device steps for all truncation holes CH, the manufacturing method further includes steps S180 and S190, wherein:

[0224] Step S180 , forming an organic layer on a surface of the first inorganic layer away from the driving backplane.

[0225] like Figure 2 As shown, the organic layer IJP can be coated on the surface of the first inorganic layer CVD1 away from the driving backplane BP by printing or the like, and the boundary of the organic layer IJP can be limited to the inner side of the boundary of the first inorganic layer CVD1 by the blocking dam located in the peripheral area WA.

[0226] Step S190 , forming a second inorganic layer covering the organic layer.

[0227] like Figure 2 As shown, the second inorganic layer CVD2 can cover the organic layer IJP and the first inorganic layer CVD1 not covered by the organic layer IJP, and the second inorganic layer CVD2 can block the intrusion of water and oxygen, and the organic layer IJP with fluidity before curing can be planarized. The material of the second inorganic layer CVD2 can include inorganic insulating materials such as silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide.

[0228] The second manufacturing method of the first category can divide light-emitting devices LD of n colors into m groups, m<n. If the display panel includes light-emitting devices LD of 3 or more different colors, but can be divided into 2 groups, the light-emitting devices LD of different colors can be grouped together, and the number of light-emitting devices LD in different groups can be different. Accordingly, the truncated holes CH corresponding to the light-emitting devices LD of different colors can be grouped together.

[0229] For example, there are three types of light-emitting devices LD, including a first light-emitting device LD1, a second light-emitting device LD2 and a third light-emitting device LD3, and n can be 2; accordingly, the truncated holes CH include a first group of truncated holes corresponding to the first light-emitting device LD1 and a second group of truncated holes corresponding to the second light-emitting device LD2 and the third light-emitting device LD3.

[0230] The first type of manufacturing method includes steps S210 to S225, wherein:

[0231] Step S210, forming a driving backplane;

[0232] Step S211, forming first electrodes of a plurality of light-emitting devices on a driving backplane;

[0233] Step S212, forming a defining layer covering each first electrode, wherein the defining layer has defining openings corresponding to and exposing each first electrode;

[0234] Step S213, forming a protective layer covering the limiting layer and the first electrode exposed by the defined opening, wherein the material of the protective layer includes an inorganic material;

[0235] Step S214, forming a truncation layer having a plurality of truncation holes on a surface of the protection layer away from the driving back plate, wherein each truncation hole overlaps with each defined opening in a one-to-one correspondence; each truncation hole is divided into a first group and a second group, and the second group of truncation holes includes the first group and the second group;

[0236] Step S215, forming a truncation groove on the sidewall of the first group of truncation holes, surrounding the defined opening overlapping therewith;

[0237] Step S216, removing at least a portion of the protective layer covering the first electrode in the first group of cut-off holes to expose the first electrode;

[0238] Step S217, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0239] Step S218, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cut-off groove; at least a portion of the second electrode is in contact with the cut-off layer and is electrically connected through the cut-off layer;

[0240] Step S219, removing the light-emitting layer and the second electrode formed in the second group of cut-off holes when the light-emitting layer and the second electrode are formed in the first group of cut-off holes;

[0241] Step S220, forming a truncation groove on the sidewall of the second group of truncation holes, surrounding the defined opening overlapping therewith;

[0242] Step S221, removing at least a portion of the protective layer covering the first electrode and the areas within the second group of cut-off holes to expose the first electrode;

[0243] Step S222, forming a light-emitting layer covering the cutoff layer and the first electrode exposed by the first group of cutoff holes, wherein the light-emitting layer is disconnected at the cutoff groove;

[0244] Step S223, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cut-off groove; at least a portion of the second electrode is in contact with the cut-off layer and is electrically connected through the cut-off layer;

[0245] When the light-emitting layer and the second electrode are formed in the first group cut-off hole, the light-emitting layer and the second electrode are removed, so as to expose the first electrode;

[0246] Step S224, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the second group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0247] Step S225, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0248] like Fig.25 and Fig.26 As shown, based on the second manufacturing method described above, a truncation groove CHs may be firstly opened for the first group of truncation holes CH, and the first light-emitting device LD1 may be formed. The specific process may refer to the content of the first device execution step in the first embodiment, which will not be described in detail here. Then, a truncation groove CHs may be opened for the first group of truncation holes CH in the second group of truncation holes CH, and the second light-emitting device LD2 may be formed. Subsequently, a truncation groove CHs may be opened for the second group of truncation holes CH, and the third light-emitting device LD3 may be formed. The specific method of forming the truncation groove CHs may refer to the method of forming the truncation groove CHs in the above embodiment, which will not be described in detail here.

[0249] Before forming the second light-emitting device LD2, it is necessary to remove the film layers (light-emitting layer EL, second electrode CAT and protective layer PD2) in the second group of truncation holes CH until the first electrode ANO is exposed, wherein the light-emitting layer EL and the second electrode CAT can be removed simultaneously before forming the truncation groove CHs, and the protective layer PD2 can be removed after forming the truncation groove CHs. The removal process can refer to the first embodiment above. Before forming the third light-emitting device LD3, it is necessary to remove the film layers (light-emitting layer EL and second electrode CAT) in the second group of truncation holes CH until the first electrode ANO is exposed, and since the truncation groove CHs of the second group of truncation holes CH has been opened when forming the second light-emitting device LD2, the process of opening the truncation groove CHs and removing the protective layer PD2 before forming the light-emitting device LD each time can be omitted, which is conducive to simplifying the process.

[0250] In addition, after each formation of the light-emitting device LD, the first inorganic layer CVD1 can also be formed. Therefore, the second manufacturing method needs to form the first inorganic layer CVD1 three times, and in the step of removing the film layer in the cutoff hole CH to expose the first electrode ANO, part of the first inorganic layer CVD1 formed previously is also removed.

[0251] The second type of manufacturing method may include steps S310 to S360, wherein:

[0252] Step S310, forming a driving backplane;

[0253] Step S311, forming first electrodes of a plurality of light-emitting devices on a driving backplane;

[0254] Step S312, forming a defining layer covering each first electrode, wherein the defining layer has defining openings corresponding to and exposing each first electrode;

[0255] Step S313, forming a protective layer covering the limiting layer and the first electrode exposed by the defined opening, wherein the material of the protective layer includes an inorganic material;

[0256] Step S314, forming a truncation layer having a plurality of truncation holes on the surface of the protection layer away from the driving back plate, wherein each truncation hole overlaps with each defined opening in a one-to-one correspondence; and each truncation hole is divided into a first group, a second group and a third group;

[0257] Step S315, forming a truncation groove on the side wall of each truncation hole to surround and overlap the defined opening;

[0258] Step S316, removing at least a portion of the protective layer covering the first electrode to expose the first electrode;

[0259] Step S317, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0260] Step S318, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer;

[0261] Step S319, removing the light-emitting layer and the second electrode formed in the second and third groups of cut-off holes when the light-emitting layer and the second electrode are formed in the first group of cut-off holes, to expose the first electrode;

[0262] Step S320, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the second set of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0263] Step S321, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cut-off groove; at least a portion of the second electrode is in contact with the cut-off layer and is electrically connected through the cut-off layer;

[0264] Step S322, removing the light-emitting layer and the second electrode formed in the third group of cut-off holes when the light-emitting layer and the second electrode are formed in the second group of cut-off holes, to expose the first electrode;

[0265] Step S323, forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the third group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove;

[0266] Step S324, forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

[0267] The details of each step of the second manufacturing method can refer to the above-mentioned embodiments of the display panel and the first manufacturing method. The main difference between the second manufacturing method and the first manufacturing method is that Fig. 27 As shown, in the second manufacturing method, a truncated groove CHs is formed for each truncated hole CH at the same time, and then light-emitting devices LD of different colors are formed respectively. In this way, the process can be simplified to the greatest extent, but the first manufacturing method can reduce the risk of residual light-emitting material in the truncated groove CHs, especially the first manufacturing method of the first category. Each time the light-emitting layer EL of a light-emitting device LD of one color is formed, only the corresponding truncated hole CH has a truncated groove CHs formed, while the truncated groove CHs corresponding to the truncated hole CH of the light-emitting device LD of other colors have not yet been formed, which can avoid the light-emitting material remaining in the truncated groove CHs.

[0268] The manufacturing method disclosed in the present invention can complete the preparation of a full-color OLED display panel without FMM by depositing multiple light-emitting devices LD and multiple photolithography processes. The dimensional accuracy is higher, and the effective light-emitting area (aperture ratio) can be increased from that of traditional FMM to about 60%. The pixel density can also be increased to more than 1500ppi. In addition, the manufacturing method can also be applied to the field of silicon-based Micro OLED, replacing the existing white light OLED (multiple light-emitting layers with different colors) + color film to achieve color display. It can even achieve 6 times the device life or 4 times the brightness. At the same time, the truncation layer CSL between the light-emitting devices LD can solve the color mixing problem between the light-emitting devices LD of the display panel and the crosstalk problem during low-brightness driving, further improving the display clarity, color performance (color gamut), uniformity and other picture quality performances.

[0269] It should be noted that, although the steps of the manufacturing method in the present disclosure are described in a specific order in the drawings, this does not require or imply that the steps must be performed in this specific order, or that all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps, etc.

[0270] The present disclosure also provides a display device, which may include a display panel, which may be a display panel of any embodiment described above, and its specific structure and beneficial effects are not described in detail here. The display device may be a mobile phone, a television, a tablet computer, or a wearable device such as a VR (Virtual Reality) device and a smart watch, which are not listed here one by one.

[0271] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

Claims

1. A display panel, characterized in that: include: Driver backplane; A plurality of light-emitting devices are provided on the driving backplane, wherein the light-emitting devices include a first electrode, a light-emitting layer, and a second electrode which are sequentially stacked in a direction away from the driving backplane; A pixel definition layer is provided on the same surface of the driving backplane as the light-emitting device; the pixel definition layer is provided with a plurality of pixel openings, one of the pixel openings exposes one of the first electrodes, and a light-emitting layer of one of the light-emitting devices is stacked on the first electrode exposed by one of the pixel openings; the pixel definition layer comprises a definition layer and a protective layer covering the definition layer; the material of the protective layer comprises an inorganic material; A truncation layer is provided on the surface of the pixel definition layer away from the driving backplane, and has a plurality of truncation holes corresponding to and overlapping with each of the pixel openings. The light-emitting layer and the second electrode of the light-emitting device are located within a range surrounded by the truncation holes. The sidewalls of the truncation holes are provided with truncation grooves surrounding the pixel openings overlapping therewith. The second electrode in the truncation hole contacts the truncation layer, and at least a portion of the second electrode is electrically connected through the truncation layer.

2. The display panel according to claim 1, characterized in that: The protection layer includes a first protection sublayer and a second protection sublayer; the first protection sublayer covers the limiting layer; the second protection sublayer covers the first protection sublayer and extends to the surface of the first electrode away from the driving backplane.

3. The display panel according to claim 1, characterized in that: The truncation layer includes a conductive layer and a shielding layer stacked in sequence in a direction away from the driving backplane, and the shielding layer and the conductive layer are made of different materials; the truncation groove is located in the conductive layer; the second electrode in the truncation hole extends into the truncation groove and contacts the conductive layer.

4. The display panel according to claim 2, characterized in that: The depth of the truncation groove decreases in a direction away from the driving back plate.

5. The display panel according to claim 1, characterized in that: The display panel further includes: The encapsulation layer includes a first inorganic layer, an organic layer and a second inorganic layer, wherein the first inorganic layer covers the second electrode and the cutoff layer and extends continuously at the cutoff groove; the organic layer is arranged on the surface of the first inorganic layer away from the driving backplane, and the second inorganic layer covers the organic layer.

6. The display panel according to claim 1, characterized in that: The light emitting device comprises at least three light emitting devices with different luminous colors, and the depths of the truncation grooves of the truncation holes overlapping the pixel openings corresponding to two of the light emitting devices with different luminous colors are different.

7. The display panel according to claim 6, characterized in that: The light-emitting device comprises a first light-emitting device emitting red light, a second light-emitting device emitting green light, and a third light-emitting device emitting blue light; the depth of the truncated groove of the truncated hole overlapping with the pixel opening corresponding to the first light-emitting device is a first depth; the depth of the truncated groove of the truncated hole overlapping with the pixel opening corresponding to the second light-emitting device is a second depth; the depth of the truncated groove of the truncated hole overlapping with the pixel opening corresponding to the third light-emitting device is a third depth; The first depth is greater than the second depth, and the second depth is greater than the third depth.

8. The display panel according to claim 7, characterized in that: The first depth is not less than 0.3 μm and not more than 1.5 μm; the second depth is not less than 0.3 μm and not more than 1.2 μm; the third depth is not less than 0.3 μm and not more than 1 μm.

9. The display panel according to claim 1, characterized in that: The light emitting device comprises a first light emitting device and a second light emitting device that are adjacent to each other; The display panel further comprises a light-emitting extension portion, which is stacked on a surface of the cut-off layer away from the driving backplane and is located between two adjacent light-emitting devices; the second electrode comprises an electrode extension portion covering the light-emitting extension portion and disconnected from the second electrode; The light-emitting extension portion includes a first light-emitting extension portion that is arranged on the same layer as the light-emitting layer of the first light-emitting device and is disconnected, and a second light-emitting extension portion that is arranged on the same layer as the light-emitting layer of the second light-emitting device and is disconnected; the first light-emitting extension portion is away from the boundary of the first light-emitting device and is connected to the second light-emitting extension portion that is away from the boundary of the second light-emitting device.

10. The display panel according to claim 1, characterized in that: The light emitting device comprises a first light emitting device and a second light emitting device that are adjacent to each other; The display panel further comprises a light-emitting extension portion, which is stacked on a surface of the cut-off layer away from the driving backplane and is located between two adjacent light-emitting devices; the second electrode comprises an electrode extension portion covering the light-emitting extension portion and disconnected from the second electrode; The side walls of the electrode extension portion and the light emitting extension portion covered by the electrode extension portion shrink in a direction away from the driving back plate.

11. A method for manufacturing a display panel, characterized in that: include: forming a driving backplane; forming a plurality of first electrodes of light-emitting devices on the driving backplane; forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to each of the first electrodes; forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material; A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into at least n groups, where n is a positive integer not less than 2; Executing device steps for each group of the truncated holes in sequence, the device steps comprising: A truncated groove is formed on the side wall of the truncated hole, surrounding and overlapping the defined opening; removing at least a portion of the protective layer covering the first electrode in the cut-off hole to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off hole, wherein the light-emitting layer is disconnected at the cut-off groove; A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

12. The manufacturing method according to claim 11, characterized in that: Before performing the device step for the i+1th group of truncated holes, the manufacturing method further includes: The second electrode and the light-emitting layer formed in the (i+1)th group of the truncation holes when the device step is performed on the i-th group of the truncation holes are removed, 1≤i≤n.

13. The manufacturing method according to claim 11, characterized in that: Forming a protective layer covering the defining layer and the first electrode exposed by the defining opening; comprising: forming a first protective sublayer covering the defining layer and the first electrode exposed by the defining opening; Patterning the first protective sublayer, removing the first protective sublayer defining the bottom of the opening, so that the first protective sublayer exposes the first electrode; A second protective sublayer is formed to cover the first protective sublayer and the first electrode exposed by the first protective sublayer.

14. The manufacturing method according to claim 11, characterized in that: A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate; comprising: forming a conductive layer covering the protective layer; forming a shielding layer covering the conductive layer; the shielding layer and the conductive layer are made of different materials; A plurality of truncation holes are provided which penetrate through the shielding layer and the conductive layer, and each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence.

15. The manufacturing method according to claim 14, characterized in that: A truncated groove is formed on the side wall of the truncated hole, surrounding and overlapping the defined opening; comprising: The conductive layer is etched in the truncation hole to form a truncation groove.

16. The manufacturing method according to claim 11, characterized in that: The device step also includes: A first inorganic layer covering the second electrode is formed, wherein the first inorganic layer continuously extends at the cut-off groove.

17. The manufacturing method according to claim 16, characterized in that: After performing the device step for the nth group of truncated holes, the manufacturing method further includes: forming an organic layer on a surface of the first inorganic layer away from the driving backplane; A second inorganic layer is formed covering the organic layer.

18. The manufacturing method according to any one of claims 11 to 17, characterized in that: n is equal to 3, the truncated holes include a first group of truncated holes, a second group of truncated holes and a third group of truncated holes; the luminescent colors of the luminescent layers in any two groups of the first group of truncated holes, the second group of truncated holes and the third group of truncated holes are different.

19. A method for manufacturing a display panel, characterized in that: include: forming a driving backplane; forming a plurality of first electrodes of light-emitting devices on the driving backplane; forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to and exposing each of the first electrodes; forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material; A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into a first group and a second group, and the second group of truncation holes includes a first group and a second group; forming a truncated groove on the sidewall of the first group of truncated holes, surrounding and overlapping the defined opening; removing at least a portion of the protective layer covering the first electrode in the first group of truncation holes to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove; forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer; removing the light-emitting layer and the second electrode formed in the second group of the cut-off holes when the light-emitting layer and the second electrode are formed in the first group of the cut-off holes; forming a truncated groove on the sidewall of the second group of truncated holes, surrounding and overlapping the defined opening; removing at least a portion of the protective layer covering the first electrode and the areas within the second group of truncated holes to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off holes of the first group, wherein the light-emitting layer is disconnected at the cut-off groove; forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer; When the light-emitting layer and the second electrode are formed in the cut-off holes of the first group, the light-emitting layer and the second electrode formed in the cut-off holes of the second group are removed to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the cut-off holes of the second group, wherein the light-emitting layer is disconnected at the cut-off groove; A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

20. A method for manufacturing a display panel, characterized in that: include: forming a driving backplane; forming a plurality of first electrodes of light-emitting devices on the driving backplane; forming a defining layer covering each of the first electrodes, wherein the defining layer has defining openings corresponding to each of the first electrodes; forming a protective layer covering the defining layer and the first electrode exposed by the defining opening, wherein the material of the protective layer comprises an inorganic material; A truncation layer having a plurality of truncation holes is formed on a surface of the protection layer away from the driving back plate, wherein each of the truncation holes overlaps with each of the limiting openings in a one-to-one correspondence; each of the truncation holes is divided into a first group, a second group and a third group; A truncated groove is formed on the side wall of each truncated hole, surrounding and overlapping the defined opening; removing at least a portion of the protective layer covering the first electrode to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the first group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove; forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer; When the light-emitting layer and the second electrode are formed in the first group of cut-off holes, the light-emitting layer and the second electrode are removed in the second group and the third group of cut-off holes to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the second group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove; forming a second electrode covering the light-emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer; When the light-emitting layer and the second electrode are formed in the second group of cut-off holes, the light-emitting layer and the second electrode are removed, so as to expose the first electrode; forming a light-emitting layer covering the cut-off layer and the first electrode exposed by the third group of cut-off holes, wherein the light-emitting layer is disconnected at the cut-off groove; A second electrode is formed to cover the light emitting layer, wherein the second electrode is disconnected at the cutoff groove; at least a portion of the second electrode is in contact with the cutoff layer and is electrically connected through the cutoff layer.

21. A display device, characterized in that: A display panel comprising any one of claims 1 to 10.

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