Heat source arrangement for facilitating adjustability of deposition

Abstract

The present disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating adjustability of deposition processes. In one implementation, a processing chamber suitable for semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space, and the substrate support includes a support surface. The processing chamber includes one or more internal heat sources. Each of the one or more internal heat sources is oriented substantially parallel to a surface of the support surface. The processing chamber includes one or more external heat sources disposed outside the internal heat source. Each of the one or more external heat sources is oriented non-parallel to a surface of the support surface.

Description

Technical Field

[0001] The present disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating tunability of deposition processes. Background Art

[0002] Semiconductor substrates are processed for a wide variety of applications, including the production of integrated devices and micro-devices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. The quality and consistency (e.g., of an epitaxial layer) can depend on accurate temperature and flow control within the chamber. For example, the temperature of the substrate and / or the temperature of the processing chamber components can affect the deposition uniformity.

[0003] Therefore, temperature non-uniformity can affect deposition uniformity, especially after adjusting parameters such as temperature, pressure, and gas flow rate. Adjusting parameters such as temperature, gas flow rate, and gas pressure for deposition uniformity can be difficult. As an example, it can be difficult to adjust the temperature outside the substrate without inadvertently affecting the temperature of other parts of the substrate and / or chamber components. If substrate rotation is used, this can make adjustment more difficult. Relatively low rotation speeds, high pressures, and low flow rates can also make adjustment more difficult.

[0004]

[0006] Therefore, there is a need for improved processing chambers and related methods that facilitate parameter uniformity and regulate processing parameters (eg, temperature). Summary of the invention

[0005] The present disclosure relates to heat source arrangements, processing chambers, and related methods that facilitate deposition process tunability, such as for silicon substrates.

[0006] In one implementation, a processing chamber suitable for semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space, and the substrate support includes a support surface. The processing chamber includes one or more internal heat sources. Each of the one or more internal heat sources is oriented substantially parallel to the surface of the support surface. The processing chamber includes one or more external heat sources disposed outside the one or more internal heat sources. Each of the one or more external heat sources is oriented non-parallel to the surface of the support surface.

[0007] In one implementation, a processing chamber suitable for semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an interior space. The processing chamber includes a substrate support disposed in the interior space. The substrate support includes an outer radius and a support surface. The processing chamber includes one or more heat sources. Each of the one or more heat sources is aligned with an offset relative to the center of the substrate support. The offset is a ratio of the outer radius, and the ratio is 0.65 or higher.

[0008] In one implementation, the method includes heating a substrate positioned on a substrate support in a processing volume of a chamber. The heating includes directing radial light radially outwardly and toward an inner portion of the substrate relative to one or more inner heat sources, and directing linear light linearly and toward an outer portion of the substrate relative to one or more outer heat sources. The method includes flowing one or more process gases through the substrate to form one or more layers on the substrate, and exhausting the one or more process gases. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above briefly summarized disclosure may be more particularly described with reference to the embodiments, in order to understand the above-mentioned features of the disclosure in more detail, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered to limit the scope of the embodiments, and other equivalent embodiments may be admitted.

[0010] Figure 1 is a schematic side cross-sectional view of a processing chamber according to one implementation.

[0011] Figure 2 According to an implementation Figure 1 A schematic enlarged view of a processing chamber is shown.

[0012] Figure 3 is a schematic side cross-sectional view of a processing chamber according to one implementation.

[0013] Figure 4 According to an implementation Figure 3 A schematic partial top view of a processing chamber is shown.

[0014] Figure 5 According to an implementation Figure 3 A schematic partial top view of a processing chamber is shown.

[0015] Figure 6 is a schematic side cross-sectional view of a processing chamber according to one implementation.

[0016] Figure 7 is a schematic block diagram of a method of processing a substrate according to one implementation.

[0017] Figure 8 is a schematic graphical view showing a graph of normalized irradiance versus horizontal position (in mm) in a processing chamber according to one implementation.

[0018] Fig. 9 According to an implementation Figure 3 Schematic diagram of one of the lower external heat sources shown.

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0020] The present disclosure relates to heat source arrangements, processing chambers, and related methods for facilitating tunability of deposition processes.

[0021] The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, fusing, melting together, interfitting, and / or fastening such as by using bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couple," "couple," "couple," and "coupled" may include, but are not limited to, integrally formed. The present disclosure contemplates that terms such as "couple," "couple," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links.

[0022] Figure 1 1 is a schematic side cross-sectional view of a process chamber 100 according to one implementation. The process chamber 100 is a deposition chamber. In one embodiment, which may be combined with other embodiments, the process chamber 100 is an epitaxial deposition chamber. The process chamber 100 is used to grow an epitaxial film on a substrate 102. The process chamber 100 generates a cross flow of precursors on a top surface 150 of the substrate 102.

[0023] The processing chamber 100 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. In one or more embodiments, the upper body 156 includes an upper clamping ring and the lower body 148 includes a lower clamping ring. In one or more embodiments, the flow module 112 includes a base ring. The processing chamber 100 includes an upper reflector structure 154 and a lower reflector structure 149 (the reflector structures 154 and 149 can each be referred to as a heat shield). The upper body 156, the flow module 112, the lower body 148, the upper reflector structure 154, and the lower reflector structure 149 form a chamber body.

[0024] A substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), a plurality of upper heat sources 141, 171, and a plurality of lower heat sources 143, 173 are disposed within the chamber body. The present disclosure contemplates that each upper heat source 141, 171 and each lower heat source 143, 173 may include, for example, a heating lamp, a side resistive heater, a light emitting diode (LED), and / or a laser. In one or more embodiments, each upper heat source 141, 171 and each lower heat source 143, 173 includes a lamp configured to emit infrared radiation (IR) light.

[0025] As shown, a controller 120 is in communication with the processing chamber 100 and is used to control operations of processes and methods, such as those described herein. The substrate support 106 has a supporting surface 109 that supports the substrate 102 .

[0026] The substrate support 106 is disposed between the upper window 108 and the lower window 110. The substrate support 106 has a support surface 123 that supports the substrate 102. A plurality of upper heat sources 141, 171 are disposed between the upper window and an upper reflector structure 154. The upper reflector structure 154 may be part of a cover. The upper reflector structure 154 may include a plurality of sensors (not shown) disposed therein or thereon for measuring the temperature within the processing chamber 100.

[0027] A reflective coating is formed on one or more inner surfaces of the upper reflector structure 154 and one or more inner surfaces of the lower reflector structure 149. The reflective coating may be similar or identical to the inner coating 183 described below.

[0028] A plurality of lower heat sources 143, 173 are disposed between the lower window 110 and the bottom plate 152. The upper window 108 is an upper dome and is formed of an energy transmitting material such as quartz. The lower window 110 is a lower dome and is formed of an energy transmitting material such as quartz. In one or more embodiments, each of the windows 108, 110 is formed of a material that is at least 95% transmissive to light having a wavelength in the infrared (IR) range.

[0029] The processing space 136 and the purification space 138 are formed between the upper window 108 and the lower window 110. The processing space 136 and the purification space 138 are a part of an inner space at least partially defined by the upper window 108, the lower window 110, and one or more gaskets 163.

[0030] The interior space has a substrate support 106 disposed therein. The substrate support 106 includes a surface 161 on which the substrate 102 is disposed and an outer shoulder 165 surrounding the surface 161. The processing chamber includes a first support frame 198 and a second support frame 199 disposed at least partially around the first support frame 198. The second support frame 199 includes an arm coupled to the substrate support 106 so that raising and lowering the second support frame 199 raises and lowers the substrate support 106. A plurality of lift pins 132 are suspended from the substrate support 106. Lowering the substrate support 106 initiates contact of the lift pins 132 with the arms of the first support frame 198. Continued lowering of the substrate support 106 initiates contact of the lift pins 132 with the substrate 102, causing the lift pins 132 to raise the substrate 102. The rods 118 (e.g., shafts) of each support frame 198, 199 extend through the bottom of the lower body 148.

[0031] The substrate support 106 is attached to the rods 118 of the second support frame 199 via arms. The rods 118 of each support frame 198, 199 are connected to the motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that provide movement and / or adjustment for the support frames 198, 199 within the processing space 136. The substrate support 106 may include lift rod holes 107 disposed therein. The lift rod holes 107 are each sized to accommodate a corresponding one of the lift rods 132 for lifting the substrate 102 from the substrate support 106 before or after performing a deposition process. The lift rods 132 may rest on lift rod stops 134 when the substrate support 106 is lowered from the processing position to the transfer position. In Figure 1 In the illustrated implementation, the lift rod stop 134 is part of an arm of the first support frame 198 .

[0032] The flow module 112 includes a plurality of gas inlets 114, a plurality of purge gas inlets 164, and one or more exhaust outlets 116. The plurality of gas inlets 114 and the plurality of purge gas inlets 164 are disposed on a side of the flow module 112 opposite to the one or more exhaust outlets 116. One or more flow guides 117a, 117b are disposed below the plurality of gas inlets 114 and the one or more exhaust outlets 116. One or more flow guides 117a, 117b are disposed above the purge gas inlet 164. In one or more embodiments, one or more flow guides 117A, 117B are integrated into a preheating ring. One or more gaskets 163 are disposed on the inner surface of the flow module 112 and protect the flow module 112 from the reaction gas used during the deposition operation and / or the cleaning operation. The gas inlet 114 and the purge gas inlet 164 are each positioned so that the gas flows parallel to the top surface 150 of the substrate 102 disposed in the processing space 136. The gas inlet 114 is fluidly connected to one or more processing gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet 164 is fluidly connected to one or more purge gas sources 162. The one or more exhaust outlets 116 are fluidly connected to the exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P) and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2)). The one or more purge gases supplied using the one or more purge gas sources 162 may include one or more inert gases (e.g., one or more of argon (Ar), helium (He) and / or nitrogen (N2)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment that may be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and the one or more cleaning gases include hydrochloric acid (HCl).

[0033] The one or more exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more exhaust outlets 116 to the exhaust pump 157. The exhaust system 178 can facilitate controlled deposition of layers on the substrate 102. The exhaust system 178 is disposed on an opposite side of the processing chamber 100 relative to the flow module 112.

[0034] The controller 120 includes a central processing unit (CPU), a memory including instructions, and support circuits for the CPU. The controller 120 controls various items directly or via other computers and / or controllers. In one or more embodiments, the controller 120 is communicatively coupled to a dedicated controller, and the controller 120 acts as a central controller.

[0035] The controller 120 is any form of general purpose computer processor that is used in an industrial environment to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory (or non-transitory computer readable medium) may be one or more of readily available memories, such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of local or remote digital memory. The support circuits of the controller 120 are coupled to the CPU to support the CPU (processor). The support circuits include cache, power supply, frequency circuit, input / output circuit system and subsystem, etc. Operating parameters (such as heating power applied to various heat sources (e.g., lamps), pressure of process gas, flow rate of process gas, and / or rotational position of substrate support 106) and operations are stored in the memory as software routines that are executed or called to transform the controller 120 into a dedicated controller to control the operation of the various chambers / modules described herein. The controller 120 is configured to perform any of the operations described herein. The instructions stored on the memory, when executed, result in performance of one or more operations described herein (eg, operations 602, 604, 606 of method 600).

[0036] The various operations described herein may be performed automatically using the controller 120 , or may be performed automatically or manually by certain operations performed by a user.

[0037] The processing chamber 100 includes a plurality of internal heat sources 141, 143. Each of the plurality of internal heat sources 141, 143 is oriented substantially parallel to the surface 161 of the support surface 123, such that the longitudinal axis of each internal heat source 141, 143 is oriented with a difference of 5° or less relative to the plane of the surface 161. In one or more embodiments, the difference is 0 degrees, such that each internal heat source 141, 143 is parallel to the surface 161. The plurality of internal heat sources 141, 143 include a first group of internal heat sources 143 below the lower window 110 and a second group of internal heat sources 141 above the upper window 108. The present disclosure contemplates that the internal heat sources 141, 143 may be oriented non-parallel to the surface 161, such that the longitudinal axis of each internal heat source 141, 143 is oriented with a difference of greater than 5 degrees relative to the plane of the surface 161.

[0038] The processing chamber 100 includes a plurality of external heat sources 171, 173 disposed outside the internal heat sources 141, 171. Each of the plurality of external heat sources 171, 173 is oriented to be non-parallel to the surface 161 of the support surface 123, so that the longitudinal axis LA1 of each external heat source 171, 173 is greater than 5 degrees relative to the plane of the surface 161. The plurality of external heat sources 171, 173 includes a first group of external heat sources 173 below the lower window 110 and a second group of external heat sources 171 above the upper window 108. The longitudinal axis LA1 of each of the plurality of external heat sources 171, 173 is oriented at an angle A1 relative to the surface 161 of the support surface 123. The angle A1 is in the range of 65 degrees to 90 degrees. The present disclosure contemplates that the first group of external heat sources 173 or the second group of external heat sources 171 may be omitted.

[0039] In one or more embodiments, the first group of internal heat sources 143 is configured to heat an inner portion of the substrate 102 on the back side of the substrate 102 (e.g., a back side inner region) using radial light directed toward the substrate 102. The inner portion may include the center of the substrate 102. The second group of internal heat sources 141 is configured to heat an inner portion of the substrate 102 on the front side of the substrate 102 (e.g., a front side inner region) using radial light directed toward the substrate 102.

[0040] The first group of external heat sources 173 below the lower window 110 and the second group of external heat sources 171

[0041] In one or more embodiments, the first group of external heat sources 173 is configured to heat an outer portion of the substrate 102 on the back side of the substrate 102 (e.g., a back side outer region) using linear light directed toward the substrate 102. The outer portion of the substrate 102 includes an outer edge 103 of the substrate 102. The second group of external heat sources 171 is configured to heat an outer portion of the substrate 102 on the front side of the substrate 102 (including the outer edge 103) (e.g., a front side outer region) using linear light directed toward the substrate 102.

[0042] Each external heat source 171, 173 of the plurality of heat sources 171, 173 is directed toward the substrate support 106, the preheat rings 117A, 117B disposed outside the substrate support 106, and / or one or more pads 163 disposed outside the substrate support 106. In one or more embodiments, each external heat source 171, 173 is directed such that each longitudinal axis LA1 is directed to extend through one or more of the surface 161 supporting the substrate 102, the outer shoulder 177, and / or the space between the substrate 102 and the outer shoulder 177. In one or more embodiments, each external heat source 171, 173 is oriented such that each longitudinal axis LA1 is oriented to extend through the one or more preheat rings 117A, 117B and / or the one or more pads 163.

[0043] A reflective sleeve 181 is disposed around each of the plurality of external heat sources 171, 173. One end of each reflective sleeve 181 is disposed at a distance D1 relative to the nearest lower window 110 or upper window 108. In one or more embodiments, the distance D1 is 10 mm or greater. The end of each reflective sleeve 181 extends beyond the end of the corresponding external heat source 171, 173 (e.g., beyond the end of the bulb of the corresponding external heat source 171, 173). The reflective sleeve 181 helps to linearly direct light to the outer portion of the substrate 102 for targeted heating.

[0044] Figure 2 According to an implementation Figure 1 A schematic enlarged view of the processing chamber 100 is shown. In one or more embodiments, each external heat source 171, 173 comprises a lamp, and the longitudinal axis LA1 extends through a coil of a filament of the lamp.

[0045] Each reflective sleeve 181 includes a substrate 182 and an inner coating 183. The inner coating 183 has a reflectivity of 0.8 or higher. In one or more embodiments, the inner coating 183 includes one or more of the following: gold (Au), silver (Ag) and / or one or more ceramics. Other materials are also considered for the inner coating 183. In one or more embodiments, the substrate 182 includes a metal, such as aluminum or stainless steel. Other materials are also considered for the substrate 182 and the coatings 183, 184. The material used for the base metal 182 and / or the material used for the coatings 183, 184 will be affected by the processing temperature used during (e.g., deposition). In one or more embodiments, each reflective sleeve 181 includes an outer coating 184 similar to or the same as the inner coating 183. The thickness T1 of the substrate 182 is in the range of 1.0 mm to 5.00 mm. In one or more embodiments, the thickness T1 is in the range of 1.8 mm to 2.2 mm, for example 2.0 mm. The thickness T2 of the inner coating 183 and the outer coating 184 is in the range of 80 micrometers to 150 micrometers. In one or more embodiments, the thickness T2 of each coating 183, 184 is in the range of 95 micrometers to 105 micrometers, for example 100 micrometers.

[0046] The present disclosure contemplates that a polished surface (eg, a mirror-polished surface) may be used in place of the inner coating 183, outer coating 184, and / or reflective coating described above. As an example, the inner and / or outer surfaces of the substrate 182 may be mirror-polished.

[0047] Figure 3 is a schematic side cross-sectional view of a processing chamber 300 according to one implementation. The processing chamber 300 is similar to the processing chamber 100 and includes one or more of its aspects, features, operations, components and / or characteristics.

[0048] The substrate support 106 has an outer radius OR1. As described above, each external heat source 171, 173 of the plurality of heat sources 171, 173 is not oriented parallel to the surface 161 of the support surface 123. In one or more embodiments, each external heat source 171, 173 is oriented substantially perpendicular to the surface 161, such that the angle A1 is in the range of 85 to 90 degrees. Each external heat source 171, 173 of the plurality of heat sources 171, 173 is aligned with an offset OF1 relative to the center 169 of the substrate support 106. The offset OF1 is a ratio of the outer radius OR1. This ratio is 0.65 or higher. In one or more embodiments, the ratio is 0.7 or higher. In one or more embodiments, the ratio is 0.8 or higher, such as 1.0 or higher. In one or more embodiments, the ratio is in the range of 0.65 to 1.35.

[0049] exist Figure 3In the illustrated implementation, each internal heat source 141 , 143 is oriented horizontally and each external heat source 171 , 173 is oriented vertically.

[0050] exist Figure 3 In the illustrated implementation, each external heat source 171, 173 is positioned such that each longitudinal axis LA1 is aligned with the outer edge 103 of the substrate 102. In one or more embodiments, each external heat source 171, 173 as shown can be moved horizontally so that each vertical longitudinal axis LA1 can be aligned outward from the outer edge 103, such as with the preheat rings 117A, 117B, one or more liners 163, and / or the flow module 112 (which can be part of one or more sidewalls of the processing chamber 300). As an example, the longitudinal axis LA1 can be oriented to heat the sidewalls of the processing chamber 300, one or more liners 163, and / or the processing gas (e.g., precursor gas).

[0051] The present disclosure contemplates that one of the upper external heat source 171 or the lower external heat source 173 may be aligned with the outer edge 103 (e.g., as Figure 3 The vertical direction or Figure 1 and 2 ), and the other of the upper external heat source 171 or the lower external heat source 173 can be aligned outward from the outer edge 171 (e.g., as Figure 3 The vertical direction in Figure 1 and Figure 2 For example, the upper external heat source 171 can be aligned with the outer edge 103, and the lower external heat source 173 can be aligned with the preheat rings 117a, 117b, one or more liners 163 and / or the flow module 112.

[0052] The present disclosure contemplates that the external heat sources 171, 173 may include various forms of heat sources. For example, the upper external heat source 171 may include a laser, an LED, and / or a resistive heater, while the lower external heat source 173 may include a lamp.

[0053] One or more (e.g., all) of the external heat sources 171, 173 may be linearly moved using a base motor 179. Each base motor 179 may include, for example, a linear actuator (e.g., an electric actuator). A separate base motor 179 may be used for each external heat source 171, 173, or multiple heat sources 171, 173 may be mounted to a common plate that is moved by the base motor 179. The linear position of the external heat sources 171, 173 may be affected by the process recipe (and controlled accordingly by the controller 120).

[0054] Figure 4 According to an implementation Figure 3 A schematic partial top view of a processing chamber 300 is shown.

[0055] Each of the first group of external heat sources 173 and the second group of external heat sources 171 includes four heat sources. For each group of external heat sources, various other numbers of heat sources (eg, one or two) are contemplated.

[0056] Each of the first group of internal heat sources 143 and the second group of internal heat sources 141 includes four heat sources. Various other numbers of heat sources (eg, one or two) are contemplated for each group of internal heat sources.

[0057] The number of heat sources discussed herein may be influenced by, for example, the temperature recipe used for the process.

[0058] Figure 5 According to an implementation Figure 3 A schematic partial top view of a processing chamber 300 is shown.

[0059] exist Figure 5 In the illustrated implementation, each of the first group of external heat sources 173 and the second group of external heat sources 171 is replaced by an arc-shaped heat source 571, 573 (e.g., an arc-shaped lamp), such that the first arc-shaped heat source 573 is below the lower window 110 and the second arc-shaped heat source 571 is above the upper window 108. Each arc-shaped heat source 571, 573 is curved and can be a circular heat source (e.g., a circular lamp). In one or more embodiments, each arc-shaped heat source 571, 573 includes a cylindrical bulb tube 574 and a filament 575 extending along an arc (e.g., a circle). Each cylindrical bulb tube 574 can be a single tube for each arc-shaped heat source 571, 573, or can be a plurality of arc-shaped segments. Each filament 575 can be a single filament for each arc-shaped heat source 517, 573, or can be a plurality of arc-shaped segments. In Figure 5 In the illustrated implementation, the longitudinal axis of the filament 575 (and cylindrical bulb tube 574) is aligned and parallel to the outer edge 103 of the substrate 102. The longitudinal axis of the filament 575 (and cylindrical bulb tube 574) may be positioned at an offset OF1. The present disclosure contemplates that one of the arc heat sources 571, 573 may be omitted.

[0060] Figure 6 is a schematic side cross-sectional view of a process chamber 600 according to one implementation. The process chamber 600 is similar to the process chambers 100, 300 and may include one or more of their aspects, features, components, operations, and / or characteristics.

[0061] exist Figure 6In the illustrated implementation, one or more outer arc-shaped heat sources 571 are disposed below the lower window 110. One or more reflective segments 581 are partially disposed around each of the one or more outer arc-shaped heat sources 571. The one or more reflective segments 581 can be similar to the reflective segment 181 and can include one or more aspects, features, components, operations, and / or characteristics thereof. The one or more reflective segments 581 direct heat (e.g., light) along the axis AX1. Figure 6 In the illustrated implementation, the axis AX1 points toward the outer edge 103. As discussed herein, other directions are contemplated for the axis AX1. Each of the one or more reflective segments 581 is curvilinear and has a parabolic shaped cross-section.

[0062] Figure 7 is a schematic block diagram illustration of a method 700 of processing a substrate according to one implementation.

[0063] At operation 702, method 700 includes heating a substrate positioned on a substrate support in a processing volume of a chamber. The heating includes directing radial light radially outward relative to one or more internal heat sources and toward an inner portion of the substrate. The radial light is directed radially outward relative to a bulb of each of the one or more internal heat sources.

[0064] Heating also includes directing the linear light linearly relative to the one or more external heat sources and toward an outer portion of the substrate. The outer portion includes an outer edge of the substrate. The linear light is directed linearly along a linear axis of a filament of each of the one or more external heat sources.

[0065] Operation 704 includes flowing one or more process gases over the substrate to form one or more layers on the substrate.

[0066] The method 700 may include rotating the substrate (eg, using a substrate support) while heating the substrate and / or flowing one or more process gases.

[0067] Operation 706 includes exhausting the one or more process gases.

[0068] Figure 8 is a schematic graphical view of a graph 800 showing normalized irradiance versus horizontal position (in mm) in a processing chamber according to one implementation. A zero value for position corresponds to the center 169 of the substrate support 106. The outer radius OR2 is the outer radius of the substrate 102.

[0069] A first profile 801 shows the normalized irradiance of a processing chamber having the objectives described herein.

[0070] A second profile 802 illustrates the normalized irradiance of a processing chamber according to another configuration.

[0071] As shown by comparing the first profile 801 to the second profile 802, it is believed that the first profile 801 involves a more uniform irradiance (and therefore has a more uniform temperature distribution and a more uniform deposition thickness). For example, it can be seen that the first profile 801 shows a more uniform irradiance with respect to the center of the substrate at the outer radius OR2 (e.g., at the outer edge 103) relative to the second profile 802. The uniformity facilitates the adjustability of processing parameters, such as the temperature of the outer portion of the substrate 102 (e.g., at the outer edge 103).

[0072] Fig. 9 According to an implementation Figure 3 A schematic diagram of one of the lower external heat sources 173 is shown. The heat source 173 is linearly movable (eg, using the base motor 179 described above).

[0073] As the heat source moves relative to plane 901 (defined by the back side 188 of substrate support 106), the cone 902 of illumination and the irradiance intensity of illumination change. As the heat source moves closer to plane 901 (so that the distance (d) decreases), the width (y) of cone 902 decreases and the irradiance intensity increases. As the heat source moves away from plane 901, the width (y) of cone 902 increases and the irradiance intensity decreases. The height (x) is equal to the distance (d). The incident irradiance power intensity (Iy) can be determined using the following equation 1:

[0074]

[0075] Ip is the peak intensity for the heat source. The coefficient (h) can be determined using the following equation 2:

[0076]

[0077] The controller 120 can use, for example, Equations 1 and 2 to determine the distance (d) to which one or more heat sources are linearly moved to facilitate achieving a target incident irradiance power intensity (Iy) during processing. The target incident irradiance power intensity (Iy) can be determined by the controller 120, for example, based on a process recipe. Such an approach facilitates irradiance intensity adjustability for temperature adjustability (e.g., at an outer portion of the substrate support 106 and / or an outer portion of the substrate 102).

[0078] Benefits of the present disclosure include reduction or elimination of temperature non-uniformity; enhanced center-to-edge deposition uniformity; adjustability (and uniformity) of processing parameters (e.g., temperature, pressure, and gas flow rates), such as in outer portions of a substrate including the outer edge; accurate adjustment of processing temperature of portions of a substrate (including during substrate rotation); reduction of heat loss and power consumption; modularity of adjustability; and targeted heating.

[0079] As an example, the ratios and / or configurations of the inner heat sources 141, 143, the outer heat sources 171, 173, the outer heat sources 571, 573, the reflective sleeve 181, and / or the reflective sleeve 581 described herein facilitate accurately adjusting the heating (e.g., temperature) of the outer portion (including the outer edge 103) of the substrate 102 relative to the inner portion and other chamber components. Such adjustability is facilitated while facilitating reducing or eliminating heat loss to other chamber components, reducing or eliminating power waste, and reducing or eliminating power consumption.

[0080] As another example, implementations of the present disclosure are modular and can be used for a variety of processing (eg, deposition) operations and / or cleaning operations, including a variety of operating parameters.

[0081] It is contemplated that one or more aspects disclosed herein may be combined. As an example, the processing chamber 100, Figure 1 and Figure 2 The heat source configuration shown, the processing chamber 300, Figure 3 and Figure 4 The heat source configuration shown, external heat sources 571, 573, Figure 3 and Figure 6 The heat source configuration, reflector section 581, method 700 and / or Fig. 9 One or more aspects, features, components, operations and / or characteristics of the methods of can be combined. In addition, it is expected that one or more aspects disclosed herein may include some or all of the above benefits.

[0082] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the foregoing, and the scope of the foregoing is determined by the claims that follow.

Claims

1. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: Lower window; an upper window, the lower window and the upper window at least partially defining an interior space; a substrate support, the substrate support being disposed in the inner space, the substrate support comprising a support surface; one or more internal heat sources, each of the one or more internal heat sources being oriented substantially parallel to a surface of the support surface; as well as One or more external heat sources, the one or more external heat sources are arranged outside the one or more internal heat sources, and each of the one or more external heat sources is oriented to be non-parallel to the surface of the support surface.

2. The processing chamber of claim 1, wherein: The one or more internal heat sources include a first group of internal heat sources below the lower window and a second group of internal heat sources above the upper window; The one or more external heat sources include a first group of external heat sources below the lower window and a second group of external heat sources above the upper window; and Each internal heat source and each external heat source includes a lamp configured to emit infrared radiation (IR) light.

3. The processing chamber of claim 1, wherein each of the one or more external heat sources is oriented at an angle relative to the surface of the support surface.

4. The processing chamber of claim 3, wherein the angle is in the range of 65 degrees to 90 degrees.

5. The processing chamber of claim 1, wherein a reflective sleeve is disposed around each of the one or more external heat sources.

6. The processing chamber of claim 5, wherein each reflective sleeve comprises a substrate and an inner coating.

7. The processing chamber of claim 6, wherein the substrate comprises stainless steel or aluminum, and the inner coating comprises one or more of gold (Au), silver (Ag), and / or one or more ceramics.

8. The processing chamber of claim 6, wherein an end of the reflective sleeve is disposed at a distance from the closest one of the lower window or the upper window, and the distance is 10 mm or greater.

9. The processing chamber of claim 1, wherein each of the one or more external heat sources is linearly movable using a base motor.

10. The processing chamber of claim 1, wherein the one or more external heat sources include: a first set of one or more external heat sources, the first set of one or more external heat sources being above the upper window, wherein: Each heat source of the first group includes a laser, a light emitting diode (LED), or a resistive heater, and Each heat source of the first group is directed toward the substrate support; and a second set of one or more external heat sources, the second set of one or more external heat sources being below the lower window, wherein: Each heat source of the second group comprises a lamp, and Each heat source of the second group is directed toward one or more of a preheat ring disposed external to the substrate support, one or more liners disposed external to the substrate support, or one or more sidewalls of the processing chamber.

11. A processing chamber suitable for semiconductor manufacturing, the processing chamber comprising: Lower window; an upper window, the lower window and the upper window at least partially defining an interior space; a substrate support disposed in the interior space, the substrate support comprising an outer radius and a support surface; as well as One or more heat sources, each of the one or more heat sources is aligned with an offset relative to a center of the substrate support, the offset being a ratio of the outer radius, and the ratio is 0.65 or greater.

12. The processing chamber of claim 11, wherein each of the one or more heat sources comprises an arc lamp having a cylindrical bulb tube and a filament having a longitudinal axis aligned with the offset.

13. A processing chamber as described in claim 11, wherein each of the one or more heat sources is oriented to be non-parallel to the surface of the support surface, and the processing chamber further includes a plurality of internal heat sources, wherein the plurality of internal heat sources are arranged inside the one or more heat sources, and each of the plurality of internal heat sources is oriented to be substantially parallel to the surface of the support surface.

14. The processing chamber of claim 13, wherein the ratio is 0.7 or higher.

15. The processing chamber of claim 13, wherein each heat source and each internal heat source comprises a lamp configured to emit infrared radiation (IR) light.

16. The processing chamber of claim 11, wherein each of the one or more heat sources is oriented at an angle relative to a surface of the support surface.

17. The processing chamber of claim 16, wherein the angle is in a range of 65 degrees to 90 degrees.

18. A method for processing a substrate, comprising: Heating a substrate positioned on a substrate support in a processing volume of a chamber, the heating step comprising: directing radial light radially outward relative to one or more internal heat sources and toward an interior portion of the substrate, and directing linear light relative to one or more external heat sources and toward an outer portion of the substrate; flowing one or more process gases over the substrate to form one or more layers on the substrate; and The one or more process gases are exhausted.

19. The method of claim 18, wherein the outer portion comprises an outer edge of the substrate.

20. The method of claim 18, wherein: The radial light is directed radially outwardly relative to a bulb of each of the one or more internal heat sources; and The linear light is directed linearly along a linear axis of a filament of each of the one or more external heat sources.

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