Chamber for batch cooling or heating and related method and structure

Abstract

The present disclosure relates to chambers for batch cooling or heating and related methods and structures. In one embodiment, a chamber suitable for semiconductor manufacturing includes a base, a cover, and one or more sidewalls between the base and the cover. The base, the cover, and the one or more sidewalls at least partially define an interior space. The chamber includes a cartridge disposed in the interior space. The cartridge includes a first outer panel, a second outer panel spaced apart from the first outer panel, and a plurality of decks between the first outer panel and the second outer panel. The plurality of decks includes a plurality of substrate supports spaced apart from each other between the first outer panel and the second outer panel. The chamber includes one or more baffles disposed outside the cartridge.

Description

Technical Field

[0001] The present disclosure relates to chambers for batch cooling or heating associated with semiconductor manufacturing and related methods and structures.

[0002] In one or more embodiments, a chamber is used to batch heat or cool multiple substrates before (eg, pre-processing) or after (eg, post-processing) a processing operation for a semiconductor application, such as an epitaxial deposition operation. Background Art

[0003] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. The substrate may be heated or cooled before or after a processing operation, such as an epitaxial deposition operation. Heating and cooling the substrate may be difficult for batch operations. For example, the position of the substrate may affect the rate at which the substrate is heated or cooled. Additionally, bottleneck effects may occur in areas of the chamber that may result in reduced heat transfer rates and / or uneven heating or cooling. Furthermore, adjustability may be limited. As an example, increasing the gas flow rate may not necessarily result in a corresponding change in the heat transfer rate.

[0004] Such obstacles may result in reduced yield, increased cycle time, increased processing time, reduced modularity in applications, increased cost and carbon footprint, and / or non-uniform substrate processing (e.g., deposition). Such obstacles may also result in non-uniformity and reduced performance of batch processing operations.

[0005] Therefore, there is a need for improved chambers for batch heating and / or cooling in semiconductor processing. Summary of the Invention

[0006] The present disclosure relates to chambers for batch cooling or heating, and related methods and structures. In one or more embodiments, the chamber is used to batch heat or cool multiple substrates before (e.g., pre-processing) or after (e.g., post-processing) a processing operation for semiconductor applications, such as an epitaxial deposition operation.

[0007] In one embodiment, a chamber suitable for semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and the one or more sidewalls at least partially define an interior space. The chamber includes a box disposed within the interior space. The box includes a first outer panel, a second outer panel spaced apart from the first outer panel, and a plurality of levels between the first and second outer panels. The plurality of levels include a plurality of substrate supports spaced apart from each other. The chamber includes one or more baffles disposed on the exterior of the box.

[0008] In one embodiment, a chamber suitable for semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and the one or more sidewalls at least partially define an interior space. The chamber includes a box disposed within the interior space. The box includes a first outer panel, a second outer panel spaced apart from the first outer panel, and a plurality of levels between the first and second outer panels. The plurality of levels include a plurality of substrate supports spaced apart from one another. The chamber includes a plurality of baffles disposed outside the box. The plurality of baffles include a first baffle positioned adjacent to the first outer panel, a second baffle spaced apart from the first baffle and positioned adjacent to the second outer panel, and a third baffle between the first and second baffles. The chamber includes a plurality of gas inlets formed in one or more sidewalls. The plurality of gas inlets include one or more first gas inlets aligned between the first baffle and the first outer panel, one or more second gas inlets aligned between the second baffle and the second outer panel, one or more third gas inlets aligned between the first baffle and the third baffle, and one or more fourth gas inlets aligned between the second and third baffles.

[0009] In one embodiment, a chamber suitable for semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, lid, and one or more sidewalls at least partially define an interior space. The chamber includes a housing disposed within the interior space. The housing includes a housing base, a housing lid, and one or more housing walls between the housing base and the housing lid. The housing base, the housing lid, and the one or more housing walls at least partially define a housing space. The housing includes a plurality of gas inlets formed in and spaced apart from one another along the one or more housing walls, and a plurality of gas outlets formed in and spaced apart from one another along the one or more housing walls. The chamber includes a box disposed within the housing space. The box includes a first outer plate, a second outer plate spaced apart from the first outer plate, and a plurality of levels between the first and second outer plates. The plurality of levels include a plurality of substrate supports spaced apart from one another. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order that the above-mentioned features of the present disclosure can be understood in detail, the disclosure briefly summarized above will be described in more detail with reference to the embodiments, some of which are shown in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope, as the disclosure may admit to other equally effective embodiments.

[0011] Figure 1 is a schematic top view of a system for processing a substrate according to one embodiment.

[0012] Figure 2 is a schematic partial cross-sectional side view of a chamber according to one embodiment.

[0013] Figure 3 for Figure 2 A schematic top cross-sectional view of the chamber is shown taken along section 3-3.

[0014] Figure 4 for Figure 2 A schematic top cross-sectional view of the chamber is shown taken along section 4-4.

[0015] Figure 5 is a schematic partial cross-sectional side view of a chamber according to one embodiment.

[0016] Figure 6 for Figure 5 A schematic top cross-sectional view of the chamber is shown taken along section 6-6.

[0017] Figure 7 is a schematic partial cross-sectional side view of a chamber according to one embodiment.

[0018] Figure 8 for Figure 7 The chamber is shown in a schematic top cross-sectional view taken along section 8-8.

[0019] Figure 9 According to one embodiment Figure 7 and Figure 8 A schematic partial perspective view of a chamber is shown.

[0020] Figure 10 is a schematic partial cross-sectional side view of a chamber according to one embodiment.

[0021] Figure 11 According to one embodiment Figure 10 The chamber shown along Figure 10 A schematic top cross-sectional view taken along section 11-11 is shown.

[0022] Figure 12 According to one embodiment Figure 11 A schematic partial perspective view of the housing is shown.

[0023] Figure 13 According to one embodiment Figure 10 A schematic partial perspective view of the housing is shown.

[0024] Figure 14 and Figure 15 is a schematic graphical view showing temperature (in degrees Celsius) versus time (in seconds) according to one or more embodiments.

[0025] Figure 16is a schematic graphical view showing temperature (in degrees Celsius) versus time (in seconds) according to one embodiment.

[0026] Figure 17 is a schematic partial cross-sectional side view of a chamber according to one embodiment.

[0027] Figure 18 According to one embodiment Figure 17 The chamber shown along Figure 17 A schematic top cross-sectional view is shown taken at section 18 - 18 .

[0028] To facilitate understanding, identical reference numerals have been used, where possible, to designate components that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0029] The present disclosure relates to chambers for batch cooling or heating, and related methods and structures. In one or more embodiments, the chamber is used to batch heat or cool multiple substrates before (e.g., pre-processing) or after (e.g., post-processing) a processing operation for semiconductor applications, such as an epitaxial deposition operation.

[0030] The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, welding, fusing, melting together, interference fit, and / or fastening such as through the use of bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, integrally formed. The present disclosure contemplates that terms such as "couples," "coupling," "couple," and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through a component such as a connecting rod.

[0031] Figure 11 is a schematic top view of a system 100 for processing substrates according to one embodiment. The system 100 includes a cluster tool 180. The cluster tool 180 includes a factory interface 102 and one or more transfer chambers 108 (one shown), wherein a transfer robot 110 is positioned in the one or more transfer chambers. The cluster tool 180 includes one or more processing chambers 124, 125, 126, 127 (four shown) and one or more cleaning chambers 128 (one shown), such as a pre-clean chamber, mounted on a mainframe 151 of a single cluster tool 180. Figure 1 In the illustrated embodiment, two processing chambers are positioned on opposite sides of the transfer chamber 108 and include a cleaning chamber 128. The present disclosure contemplates that a greater or lesser number of processing chambers and / or pre-cleaning chambers may be used. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload substrates to and from each of the two processing volumes of one of the processing chambers 124, 125, 126, 127. In one or more embodiments, the transfer robot 110 is configured to simultaneously load and unload two or more substrates to and from each of the two cassettes positioned in the two processing volumes of one of the processing chambers 124, 125, 126, 127. Figure 1 In the illustrated embodiment, the transfer robot 110 is configured to load and unload at least four substrates 109 simultaneously.

[0032] exist Figure 1 In the illustrated embodiment, the factory interface 102 includes a docking station 140 and a factory interface robot 142 to facilitate the transfer of cassettes and / or substrates. The docking station 140 is configured to receive one or more front opening unified pods (FOUPs) 149. In one embodiment, which may be combined with other embodiments, each factory interface robot 142 includes a support structure 148 (such as a pallet) that is configured to transfer cassettes and / or substrates from the factory interface 102 to the load lock chambers 104, 106. The load lock chambers 104, 106 have respective doors 150, 152 that interface with the factory interface 102 and respective doors 154, 156 that interface with the transfer chamber 108. The chambers 124, 125, 126, 127, 128 have respective doors that interface with the transfer chamber 108. The door may include, for example, a slit opening having a slit valve for the transfer robot 110 to pass the cassette and / or substrate therethrough and to provide a seal between the respective chambers to prevent gas from being transferred between the respective chambers. During loading or unloading of a chamber, a door may be opened to transfer the cassette and / or substrate therethrough. The door may be closed otherwise.

[0033] One or more load lock chambers 104, 106 may include one or more chamber embodiments described herein. For example, as described below, each load lock chamber 104, 106 may be used to heat or cool multiple substrates in a batch manner. The chamber embodiments described herein may be used in other chambers of the system 100, such as one or more temporary storage chambers for the system 100. One or more of the processing chambers 124, 125, 126, 127 may include one or more processing chambers (such as one or more epitaxial deposition chambers) available from Applied Materials, Inc. of Santa Clara, California.

[0034] The system 100 includes a controller 190 for controlling the system 100 or its components. For example, the controller 190 can control the operation of the system 100 using direct control of the chambers 124, 125, 126, 127, 128 of the system 100 or by controlling controllers associated with the chambers 124, 125, 126, 127, 128. In operation, the controller 190 enables the collection of data and feedback from the respective chambers to coordinate and control the execution of the system 100.

[0035] The controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuits 196. The CPU 192 can be any form of general-purpose processor that can be used in an industrial environment. The memory 194, or non-transitory computer-readable medium, can be accessed by the CPU 192 and can be one or more memories such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or any other form of local or remote digital storage. The support circuits 196 are coupled to the CPU 192 and can include cache memory, clock circuits, input / output subsystems, power supplies, and the like.

[0036] The various methods and operations described herein may generally be implemented under the control of CPU 192, which executes a computer script, such as a software routine, stored in memory 194 (or the memory of a particular processing chamber). When the computer script is executed by CPU 192, CPU 192 controls the chamber to operate according to the various methods and operations described herein. In one embodiment, which may be combined with other embodiments, memory 194 (a non-transitory computer-readable medium) includes instructions stored therein that, when executed, cause the methods and operations described herein to be implemented. Controller 190 may communicate with one or more gas sources 228 and one or more pumping devices 229, for example, to cause a plurality of operations to be performed.

[0037] Other processing systems in other configurations are contemplated. For example, more or fewer processing chambers may be coupled to the transfer apparatus. Figure 1 In the illustrated embodiment, the transfer apparatus includes a transfer chamber 108. In other embodiments, more or fewer transfer chambers (eg, one transfer chamber) may be implemented as a transfer device for processing substrates in the system.

[0038] Figure 2 FIG2 is a schematic partial cross-sectional side view of a chamber 200 according to one embodiment. As discussed above, the subject matter of chambers described herein, such as chamber 200, can be used in load lock chambers. The subject matter of chambers described herein can also be used in other chambers, such as temporary storage chambers. For example, a temporary storage chamber can be used to hold substrates that have reached a target temperature until a pre-clean chamber or deposition chamber is available and / or until a transfer robot is available.

[0039] The chamber 200 includes a base 202, a lid 204, and one or more sidewalls 206 between the base 202 and the lid 204. In one or more embodiments, the base 202 and / or the lid 204 are curved, such as dome-shaped. The base 202, the lid 204, and the one or more sidewalls 206 at least partially define an interior space 208. In one or more embodiments, the base 202, the lid 204, and / or the one or more sidewalls 206 are coupled to one another, such as being integrally formed.

[0040] The chamber 200 includes a box 210 disposed in the interior space 208. The box 210 includes a first outer panel 212, a second outer panel 214 spaced apart from the first outer panel 212, and a plurality of layers 213 between the first outer panel 212 and the second outer panel 214. In one or more embodiments, the first outer panel 212 is curved, such as dome-shaped.

[0041] The plurality of levels 213 include a plurality of substrate supports 216 spaced apart from each other between a first outer plate 212 and a second outer plate 214. The cassette 210 includes a plurality of support rods 215 extending between the first outer plate 212 and the second outer plate 214. For each level 213 in the plurality of levels 213, a set of substrate supports 216 is coupled to the plurality of support rods 215 and extends inwardly relative to the plurality of support rods 215. In one or more embodiments, the plurality of support rods 215 includes three support rods, and each support rod 215 includes one or more substrate supports 216. In one or more embodiments, each substrate support 216 includes a flange, such as a pin or an arcuate ring segment. For example, the cassette 210 can be supported in the chamber 200 using the second outer plate 214 supported by the base 202 using one or more support structures 219. The one or more support structures 219 can include beams and / or can be circular, cylindrical, and / or rectangular in shape.

[0042] The chamber 200 includes one or more baffles 220 disposed outside of the box 210. The one or more baffles 220 are mounted on the one or more side walls 206. The present disclosure contemplates that the one or more baffles 220 may be coupled to the one or more side walls 206, such as being integrally formed with the one or more side walls 206. A plurality of support rods 215 are positioned between the one or more baffles 220 and the plurality of substrate supports 216. The one or more baffles 220 each include an arcuate ring having a flow opening 221 to define an arcuate ring segment of the corresponding baffle 220. Each level 213 of the box 210 includes a baffle 220. In Figure 2 In the illustrated embodiment, the chamber 200 includes 25 levels 213 and 25 baffles 220. Each level 213 of the cassette 210 supports one substrate 225 of the plurality of substrates 225. Other numbers of levels 213, substrates 225, and baffles 220 (such as a higher or lower number) are contemplated.

[0043] exist Figure 2 In the illustrated embodiment, the one or more baffles 220 include a first baffle 220a having a first flow opening 221a and a second baffle 220b spaced apart from the first baffle 220a. The second baffle 220b has a second flow opening 221b. The second flow opening 221b is offset from the first flow opening 221a in a direction D1 from the second outer plate 214 toward the first outer plate 212.

[0044] The chamber 200 includes one or more gas inlets 226 formed in the lid 204 and located outside the first outer plate 212, and one or more gas outlets 227 formed in the base 202 and located outside the second outer plate 214. The one or more gas inlets 226 are in fluid communication with one or more gas sources 228, which are configured to supply one or more purge gases P1 to the interior 208 of the chamber 200. The one or more purge gases P1 include an inert or low-reactive gas. In one or more embodiments, the one or more purge gases P1 include one or more of argon (Ar), helium (He), hydrogen (H2), nitrogen (N2), and / or any other purge gas. The one or more gas outlets 227 are in fluid communication with one or more pumping devices 229 (such as one or more vacuum pumps), which are configured to exhaust the one or more purge gases P1 from the interior 208 of the chamber 200.

[0045] During a heat transfer operation that simultaneously heats or cools the substrate 225, one or more purge gases P1 are supplied to the interior space 208 at a target temperature. The one or more purge gases P1 may be heated or cooled to the target temperature before entering the interior space 208. The target temperature is greater than (when heating, such as pre-process heating of the substrate 225) or less than (when cooling, such as post-process cooling of the substrate 225) a reference temperature. The target temperature and / or the reference temperature may depend on subsequent operation or process temperature parameters (such as process temperature parameters of the subsequent operation). In one or more embodiments, the reference temperature is a process temperature that will be used or has been used for the substrate 225 during a deposition operation to form one or more layers on the substrate 225. In one or more embodiments, the target temperature is in the range of 100 degrees Celsius to 400 degrees Celsius (such as for pre-cleaning). In one or more embodiments, the target temperature is in the range of 350 degrees Celsius to 1100 degrees Celsius (such as for post-process cooling followed by additional processing), such as in the range of 800 degrees Celsius to 1100 degrees Celsius. In one or more embodiments, the target temperature is 30 degrees Celsius or higher (such as for storing the substrate after processing). The deposition operation can be, for example, an epitaxial operation, a chemical vapor deposition (CVD) operation, an atomic layer deposition (ALD) operation, and / or a physical vapor deposition (PVD) operation. Other processing operations are also contemplated, and the chamber 200 can be used for heating and / or cooling before or after these other processing operations.

[0046] Baffles 220 with flow openings 221 facilitate directing one or more purge gases P1 across the front and back surfaces of each substrate 225 to heat or cool the substrates 225. For example, baffles 220 with flow openings 221 facilitate directing one or more purge gases P1 between substrates 225, reducing or eliminating bottlenecks that would otherwise cause the one or more purge gases P1 to flow outward from the substrates 225. Chamber 200 facilitates higher purge gas P1 velocities between substrates 225 and increased convection between the one or more purge gases P1 and the substrates 225, which facilitates increased heat transfer coefficients, batch heating and / or cooling of substrates, reduced cycle and processing times, reduced operating costs, a reduced carbon footprint (through better utilization of purge gases), increased throughput, increased cooling and / or heating rates, adjustability of gas flow rates and heat transfer rates, and modularity in applications. By way of example, chamber 200 facilitates higher heat transfer when the gas flow rate of the one or more purge gases P1 increases.

[0047] exist Figure 2In the illustrated embodiment, the flow openings 221 of the baffles 220 are offset from one another in an alternating arrangement in the flow direction D2 (opposite to D1) such that there is no line of sight through the flow openings 221 in the flow direction D2. This alternating arrangement defines a serpentine airflow pattern that includes linear portions (between the substrates 225) and turns (outside the substrates 225).

[0048] In one or more embodiments, the first outer plate 212, the second outer plate 214, the support rods 215, the one or more baffles 220, the base 202, the cover 204, and the one or more sidewalls 206 are all made of aluminum. Other materials are contemplated for the chamber 200, such as materials that reduce cost and / or increase heat transfer rates.

[0049] Figure 3 for Figure 2 The chamber 200 is shown in a schematic top cross-sectional view taken along section 3-3. The flow opening 221 of each baffle 220 is defined by an angle A1, which is 10 degrees or greater, such as 30 degrees or greater. In one or more embodiments, angle A1 is in the range of 55 degrees to 65 degrees. In one or more embodiments, angle A1 is approximately 60 degrees. Each baffle 220 is an arcuate ring segment of a C-shaped ring segment. Angle A2 of the arcuate ring segment is equal to 360 degrees minus angle A1 of the flow opening 221. For example, if angle A1 of the flow opening 221 is 30 degrees, angle A2 of the arcuate ring segment is 330 degrees.

[0050] An annular gap 240 is defined between the substrate 225 and the one or more baffles 220. In one or more embodiments, the annular gap 240 is approximately 5.0 mm or less. In one or more embodiments, the annular gap 240 is approximately 2.0 mm. The size of the annular gap 240 may depend on process parameters and / or performance parameters.

[0051] The position of the support rod 215 is shown in Figure 3 in order to Figure 2 More clearly. In one or more embodiments, Figure 3 The two support rods 215 aligned horizontally with each other can be moved to Figure 3 The two positions 301a, 301b shown in phantom allow the three support rods 215 to be arranged in a triangle.

[0052] Figure 4 for Figure 2 The chamber 200 is shown as a schematic top cross-sectional view taken along section 4-4. Figure 3 and Figure 4 As shown, the flow openings 221 of the baffles 220 are positioned on opposite sides of the interior space 208 in an alternating arrangement.

[0053] Figure 5 FIG is a schematic partial cross-sectional side view of a chamber 500 according to one embodiment. The chamber 500 is similar to Figure 2 The chamber 200 is shown and may include one or more features, aspects, components, operations and / or properties of the chamber.

[0054] In chamber 500, one or more baffles include a first baffle 220a having a first flow opening 221a and a second baffle 220b spaced apart from first baffle 220a. Second baffle 220b has a second flow opening 221b. Chamber 500 includes a third baffle 520 between first baffle 220a and second baffle 220b. Third baffle 520 has a solid ring. In one or more embodiments, third baffle 520 is an intermediate baffle aligned with an intermediate level 213 among the plurality of levels 213.

[0055] The solid ring of the third baffle 520 divides the interior space 208 into a first side 508a and a second side 508b, so that the one or more purge gases P1 are diverted to each side 508a, 508b. On each side of the third baffle 520, the flow openings 221 of the baffle 220 are offset from each other in an alternating arrangement, so that a serpentine gas flow pattern is defined on each side of the third baffle 520.

[0056] The chamber 500 includes a first gas inlet 526 a formed in one or more sidewalls 206 on a first side of the third baffle 520 and a second gas inlet 526 b formed in one or more sidewalls 206 on a second side of the third baffle 520. The chamber 500 includes a first gas outlet 527 a formed in the lid 204 and outside the first outer plate 212 and a second gas outlet 527 b formed in the base 202 and outside the second outer plate 214.

[0057] Figure 6 for Figure 5 The chamber 500 is shown in a schematic top cross-sectional view taken along section 6-6.

[0058] Figure 7 FIG is a schematic partial cross-sectional side view of a chamber 700 according to one embodiment. The chamber 700 is similar to Figure 2 The chamber 200 shown is similar to the chamber 200 and may include one or more features, aspects, components, operations and / or properties of the chamber. Figure 5 The chamber 500 is shown and may include one or more features, aspects, components, operations and / or properties of the chamber.

[0059] The chamber 700 includes a plurality of baffles 520 disposed outside the box 210. Each baffle 520 has a solid ring. The plurality of baffles 520 include a first baffle 520a positioned adjacent to the first outer plate 212, a second baffle 520b spaced apart from the first baffle 520a and positioned adjacent to the second outer plate 214, and a third baffle 520c between the first baffle 520a and the second baffle 520b. Figure 7 In the illustrated embodiment, 22 baffles 520 , excluding the third baffle 520 c , are positioned between the first baffle 520 a and the second baffle 520 b .

[0060] The chamber 700 includes a plurality of gas inlets 726 formed in one or more sidewalls 206. The plurality of gas inlets 726 include one or more first gas inlets 726a aligned between the first baffle 520a and the first outer plate 212, and one or more second gas inlets 726b aligned between the second baffle 520b and the second outer plate 214. The plurality of gas inlets 726 include one or more third gas inlets 726c aligned between the first baffle 520a and the third baffle 520c, and one or more fourth gas inlets 726d aligned between the second baffle 520b and the third baffle 520c.

[0061] The chamber 700 includes a plurality of gas outlets 727 formed in one or more sidewalls 206. The plurality of gas outlets 727 include one or more first gas outlets 727a aligned between the first baffle 520a and the first outer plate 212, and one or more second gas outlets 727b aligned between the second baffle 520b and the second outer plate 214. The plurality of gas outlets 727 include one or more third gas outlets 727c aligned between the first baffle 520a and the third baffle 520c, and one or more fourth gas outlets 727d aligned between the second baffle 520b and the third baffle 520c. As described above, each of the first baffle 520a, the second baffle 520b, and the third baffle 520c has a solid ring.

[0062] Each of the plurality of gas inlets 726 includes an inlet opening 731 and each of the plurality of gas outlets 727 includes an outlet opening 732 formed in one or more sidewalls 206. Each of the plurality of gas inlets 726 and the plurality of gas outlets 727 includes a nozzle 733, 734 mounted to one or more sidewalls 206.

[0063] exist Figure 7In the illustrated embodiment, one or more support structures 719 are included, and the one or more support structures 719 include one or more walls. The one or more walls 720 are positioned between the first outer panel 212 and the lid 204. Using the one or more walls of the one or more support structures 719 and the one or more walls 720, the gas inlet 731 is fluidly separated (e.g., isolated) from the gas outlet 732 in an area outside the cartridge 210.

[0064] Figure 8 for Figure 7 The chamber 700 is shown in a schematic top cross-sectional view taken along section 8-8.

[0065] Each of the one or more first gas inlets 726a, the one or more second gas inlets 726b, the one or more third gas inlets 726c, and the one or more fourth gas inlets 726d includes a set of inlet openings 731 ( Figure 8 ), which are spaced apart from each other at angles A3 along one or more sidewalls 206 (such as Figure 8 731). The set of inlet openings 731 can facilitate cross-flow of the purge gas P1 over the substrate 225. Angle A3 is between the central axes 739 of the inlet openings 731. In one or more embodiments, angle A3 is in the range of 10 to 90 degrees (such as 10, 20, 45, 60, or 90 degrees). In one or more embodiments, each inlet opening 731 includes a nozzle 733 that is in fluid communication with the corresponding inlet opening 731 and / or is at least partially inserted into the corresponding inlet opening 731. In one or more embodiments, each outlet opening 732 includes a nozzle 734 that is in fluid communication with the corresponding outlet opening 732 and / or is at least partially inserted into the corresponding outlet opening 732.

[0066] The present disclosure contemplates that a series of nozzles may be used while each nozzle 733, 734 is illustrated. In one or more embodiments, the inlet opening 731 and the outlet opening 732 each have a circular or oval cross-sectional shape.

[0067] like Figure 7 As shown, the present disclosure contemplates that each gas outlet 727 may utilize an outlet opening 732 .

[0068] One or more walls 720 are disposed at an angle A4 relative to a direction 741 extending from the gas inlet 731 to the gas outlet 734. Angle A4 is in the range of 20 to 150 degrees, such as in the range of 20 to 90 degrees, or in the range of 90 to 150 degrees. Angle A4 is in the range of Figure 8 The middle diagram shows 90 degrees.

[0069] Figure 9According to one embodiment Figure 7 and Figure 8 A schematic partial perspective view of chamber 700 is shown.

[0070] Each inlet opening 731 and / or outlet opening 732 is aligned such that each central axis 739 is aligned at a distance DS1 from the upper surface 257 of the adjacent substrate 225, which is located below the corresponding opening 731, 732. In one or more embodiments, distance DS1 is 0.5 mm or greater, such as in the range of 0.5 mm to 1.5 mm. In one or more embodiments, distance DS1 is 1.0 mm.

[0071] Figure 10 FIG is a schematic partial cross-sectional side view of a chamber 1000 according to one embodiment. The chamber 1000 is similar to Figure 2 The chamber 200 is shown and may include one or more features, aspects, components, operations and / or properties of the chamber.

[0072] The chamber 1000 includes a housing 1010 disposed within the interior space 208. The housing 1010 includes a housing base 1012, a housing lid 1014, and one or more housing walls 1016 between the housing base 1012 and the housing lid 1014. The housing base 1012, the housing lid 1014, and the one or more housing walls 1016 at least partially define a housing space 1018. The housing 1010 includes a plurality of gas inlets 1031 formed in and spaced apart from one another along the one or more housing walls 1016, and a plurality of gas outlets 1032 formed in and spaced apart from one another along the one or more housing walls 1016. Each gas inlet 1031 and gas outlet 1032 is aligned between the first outer plate 212 and the second outer plate 214. Each gas inlet 1031 and gas outlet 1032 is aligned between the substrate supports 216 of two adjacent layers 213. The gas outlet 1032 is circumferentially spaced approximately 180 degrees from the gas inlet 1031 along the one or more sidewalls 206 .

[0073] For example, housing 1010 can be supported in chamber 1000 using housing base 1012 supported by base 202 using one or more secondary support structures 1039. Second support structure(s) 1039 can include beams and / or can be circular, cylindrical, and / or rectangular.

[0074] The cassette 210 is disposed in the housing space 1018. The present disclosure contemplates that the baffle 220 (such as Figure 10 As shown) or a baffle 220 is included in the chamber 1000.

[0075] The chamber 1000 includes a closed end 1027 of the housing base 1012 and a common outlet 1028 formed in the base 202. Each of a plurality of gas inlets 1031 is in fluid communication with a common gas conduit 1029 extending through the base 202. The chamber 1000 includes an outer annular flow path 1041 around the housing 1010 and an inner annular flow path 1042 within the housing 1010. The inner annular flow path 1042 is disposed around the cartridge 210 and is fluidically separated (e.g., partitioned) using one or more walls 720 and one or more support structures 719. One or more purge gases P1 flow from the gas inlets 1031, through the substrate 225, through the gas outlets 1032, and out the common outlet 1028.

[0076] exist Figure 10 In the illustrated embodiment, one or more walls 720 are located between the first exterior panel 212 and the housing cover 1014 .

[0077] exist Figure 10 In the illustrated embodiment, the gas inlet 1031 and the gas outlet 1032 each include a size gradient that decreases from two middle inlets 1031a and two middle outlets 1032a to two end inlets 1031b, 1031c and two end outlets 1032b, 1032c. The present disclosure contemplates that the sizes of the gas inlet 1031 and the gas outlet 1031 may be substantially equal to each other, such as Figure 17 The embodiment shown in (see below).

[0078] Figure 11 According to one embodiment Figure 10 The chamber 1000 is shown along Figure 10 A schematic top cross-sectional view taken along section 11-11 is shown. Figure 11 A single layer 213 of the plurality of layers 213 is shown. Figure 11In the illustrated embodiment, one or more of the gas inlets 1031 of each level 213 comprises one or more slots extending circumferentially along one or more housing walls 1016 at a slot angle SA1. In one or more embodiments, the slot angle SA1 is 10 degrees or greater, such as 30 degrees or greater, for example, 45 degrees, 60 degrees, 90 degrees, or 120 degrees. In one or more embodiments, one or more of the gas outlets 1032 of each level 213 comprises one or more slots extending circumferentially along one or more housing walls 1016 at a second slot angle SA2. In one or more embodiments, the second slot angle SA2 is less than the slot angle SA1. In one or more embodiments, the slot angle SA1 is in the range of 20 degrees to 40 degrees, and the slots of each gas inlet 1031 and gas outlet 1032 have a height H1 in the range of 0.5 mm to 1.5 mm. In one or more examples, the slot angle SA1 is 30 degrees and the height H1 is 1.0 mm.

[0079] For example, the slot angle SA1 can promote greater coverage of the purge gas P1 over the substrate 225 to promote a greater forced convection effect. The chamber 1000 promotes a heat transfer rate of 0.35 degrees Celsius per second or greater (such as 0.375 degrees Celsius per second or greater) on a batch of multiple substrates 225 (such as 25 substrates).

[0080] Figure 12 According to one embodiment Figure 11 A schematic partial perspective view of housing 1010 is shown.

[0081] Figure 13 According to one embodiment Figure 10 A schematic partial perspective view of housing 1010 is shown.

[0082] Figure 14 and Figure 15 is a schematic graphical illustration of curves 1400, 1500 showing temperature (in degrees Celsius) versus time (in seconds) according to one or more embodiments. Each curve corresponds to the temperature of a respective substrate in each curve 1400, 1500.

[0083] exist Figure 15 In graph 1500, a chamber including the subject matter described herein is used to cool a plurality of substrates to a target temperature TE1. Figure 14 In graph 1400 , another chamber configuration is used to cool multiple substrates to the same target temperature TE1 using the same parameters (eg, purge gas composition, purge gas temperature, and purge gas flow rate).

[0084] like Figure 15As shown, using the subject matter described herein, in the Figure 14 The time TI2 shown is faster than the time TI1, cooling all substrates to the target temperature TE1. Faster heat transfer time is beneficial, for example, to increase production and reduce costs.

[0085] Time TI1 may be approximately 80% of time TI2, representing a cycle time reduction of 20% or more. Using adjustability (such as by increasing the gas flow rate of the purge gas), time TI1 may be 50% to 60% of time TI2, which may represent a cycle time reduction of 40% to 50% or more.

[0086] Figure 16 is a schematic graphical illustration of a curve 1600 showing temperature (in degrees Celsius) versus time (in seconds), according to one embodiment.

[0087] like Figure 16 As shown, using the subject matter described herein, for example, Figure 14 The curves shown provide a more uniform cooling rate for cooling multiple substrates.

[0088] Figure 17 FIG is a schematic partial cross-sectional side view of a chamber 1700 according to one embodiment. The chamber 1700 is similar to Figure 10 The chamber 1000 is shown and may include one or more features, aspects, components, operations and / or properties of the chamber.

[0089] Figure 18 According to one embodiment Figure 17 The chamber 1700 is shown along Figure 17 A schematic top cross-sectional view is shown taken at section 18 - 18 . Figure 18 A single level 213 of the plurality of levels 213 is shown.

[0090] Benefits of the present disclosure include: batch heating and / or cooling of substrates with more uniform heating and / or cooling rates; increased batch capacity (e.g., 25 or more substrates); reduced cycle time and processing time; increased throughput; increased cooling and / or heating rates; adjustability of gas flow rates and heat transfer rates; modularity in applications; reduced or eliminated bottleneck effects; and increased heat transfer coefficients (such as convective heat transfer coefficients). Such benefits are achieved in a simple, cost-effective, and easy-to-use manner. Such benefits of the present application are facilitated by embodiments of the present disclosure. As an example, one or more embodiments (such as chamber 700) facilitate the ability and flexibility to use each individual gas inlet 731 and gas outlet 732 to individually adjust the flow rate of the purge gas at each level so that all substrates 225 are cooled or heated to the target temperature substantially simultaneously. Reaching the target temperature substantially simultaneously facilitates time savings (including reduced delays in subsequent processing) and increased throughput.

[0091] It is contemplated that various aspects described herein may be combined. For example, one or more features, aspects, components, operations, and / or properties of system 100, chamber 200, chamber 500, chamber 700, chamber 1000, and / or chamber 1700 may be combined. It is further contemplated that any combination may achieve the aforementioned benefits.

[0092] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the disclosure is to be determined by the claims that follow.

Claims

1. A chamber for semiconductor manufacturing, comprising: base; build; one or more side walls, the one or more side walls being between the base and the cover, the base, the cover and the one or more side walls at least partially defining an interior space; A box is placed in the inner space, and the box includes: The first outer panel, a second outer panel, the second outer panel being spaced apart from the first outer panel, and a plurality of levels, the plurality of levels being between the first outer plate and the second outer plate, the plurality of levels comprising a plurality of substrate supports spaced apart from one another; as well as One or more baffles are disposed outside of the box.

2. The chamber of claim 1, wherein the one or more baffles are mounted to the one or more side walls, and the cartridge further comprises: A plurality of support rods extend between the first outer plate and the second outer plate, wherein the plurality of support rods are positioned between the one or more baffles and the plurality of substrate supports.

3. The chamber of claim 2, wherein for each of the plurality of levels, a set of substrate supports are coupled to and extend inwardly relative to the plurality of support rods.

4. The chamber of claim 1, wherein the one or more baffles each comprise an arcuate ring having flow openings to define arcuate ring segments.

5. The chamber of claim 4, wherein the flow opening is defined by an angle of 10 degrees or greater.

6. The chamber of claim 4, wherein the one or more baffles comprise: a first baffle having a first flow opening; as well as A second baffle is spaced apart from the first baffle, the second baffle having a second flow opening, wherein the second flow opening is offset from the first flow opening in a direction from the second outer plate toward the first outer plate.

7. The chamber of claim 6, further comprising: one or more gas inlets formed in the cover and external to the first outer panel; as well as One or more gas outlets are formed in the base and external to the second outer panel.

8. The chamber of claim 1, wherein the one or more baffles comprise: a first baffle having a first flow opening; a second baffle, the second baffle being spaced apart from the first baffle, the second baffle having a second flow opening; as well as The third baffle is between the first baffle and the second baffle, and has a solid ring.

9. The chamber of claim 8, further comprising: a first gas inlet formed in the one or more sidewalls on a first side of the third baffle; a second gas inlet formed in the one or more sidewalls on a second side of the third baffle; a first gas outlet formed in the cover and external to the first outer panel; as well as A second gas outlet is formed in the base and outside the second outer panel.

10. The chamber of claim 1, wherein each of the first outer plate, the second outer plate, and the one or more baffles are formed of aluminum.

11. A chamber suitable for semiconductor manufacturing, comprising: base; build; one or more side walls, the one or more side walls being between the base and the cover, the base, the cover and the one or more side walls at least partially defining an interior space; A box is placed in the inner space, and the box includes: The first outer panel, a second outer panel, the second outer panel being spaced apart from the first outer panel, and a plurality of levels between the first outer plate and the second outer plate, the plurality of levels comprising a plurality of substrate supports spaced apart from one another; and A plurality of baffles, the plurality of baffles being disposed outside the box, the plurality of baffles comprising: a first baffle, the first baffle being positioned adjacent to the first outer panel, a second baffle spaced from the first baffle and positioned adjacent to the second outer panel, and a third baffle, the third baffle being between the first baffle and the second baffle; and a plurality of gas inlets formed in the one or more sidewalls, the plurality of gas inlets comprising: one or more first gas inlets, the one or more first gas inlets being aligned between the first baffle plate and the first outer plate, one or more second gas inlets, the one or more second gas inlets being aligned between the second baffle plate and the second outer plate, one or more third gas inlets aligned between the first baffle and the third baffle, and One or more fourth gas inlets are aligned between the second baffle and the third baffle.

12. The chamber of claim 11, further comprising a plurality of gas outlets formed in the one or more sidewalls, the plurality of gas outlets comprising: one or more first gas outlets, the one or more first gas outlets being aligned between the first baffle plate and the first outer plate, one or more second gas outlets, the one or more second gas outlets being aligned between the second baffle plate and the second outer plate, one or more third gas outlets aligned between the first baffle and the third baffle, and One or more fourth gas outlets are aligned between the second baffle and the third baffle.

13. The chamber of claim 12, wherein each of the first baffle, the second baffle, and the third baffle has a solid ring.

14. The chamber of claim 11, wherein each of the plurality of gas inlets comprises an inlet opening formed in the one or more side walls, and a nozzle mounted to the one or more side walls.

15. The chamber of claim 11, wherein each of the one or more first gas inlets, the one or more second gas inlets, the one or more third gas inlets, and the one or more fourth gas inlets comprises a set of inlet openings, the set of inlet openings being spaced apart from each other at an angle in a circumferential direction along the one or more side walls, and the angle is in the range of 10 degrees to 90 degrees.

16. A chamber suitable for semiconductor manufacturing, comprising: base; build; one or more side walls, the one or more side walls being between the base and the cover, the base, the cover and the one or more side walls at least partially defining an interior space; A housing is disposed in the inner space, and comprises: Shell base, a housing cover, and one or more housing walls, the one or more housing walls being between the housing base plate and the housing cover, the housing base plate, the housing cover and the one or more housing walls at least partially defining a housing space, a plurality of gas inlets formed in and spaced apart from one another along the one or more housing walls, and a plurality of gas outlets formed in and spaced apart from one another along the one or more housing walls; and A box is placed in the housing space, and the box includes: The first outer panel, a second outer panel, the second outer panel being spaced apart from the first outer panel, and A plurality of levels are provided between the first outer plate and the second outer plate, the plurality of levels comprising a plurality of substrate supports spaced apart from one another.

17. The chamber of claim 16, further comprising a common outlet formed in the base, wherein each of the plurality of gas inlets is in fluid communication with a common gas conduit extending through the base.

18. The chamber of claim 16, further comprising an outer annular flow path surrounding the housing.

19. The chamber of claim 16, wherein each of the plurality of gas inlets and each of the plurality of gas outlets comprises a slot extending circumferentially along the one or more housing walls at a slot angle.

20. The chamber of claim 19, wherein the slot angle is in the range of 10 degrees to 120 degrees, and the slot has a height in the range of 0.5 millimeters to 1.5 millimeters.

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