Three-dimensional model system and method for magnetron sputtering PVD virtual simulation
Through the three-dimensional model system of magnetron sputtering PVD virtual simulation, the key links in the magnetron sputtering process are simulated, and the high cost and experimental risks of existing technologies in teaching are solved, achieving a deeper principle demonstration and intuitive educational effect.
Patent Information
- Application Number
- CN202510115564.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-24
- Publication Date
- 2025-05-16
AI Technical Summary
The existing magnetron sputtering PVD technology has high cost, environmental pollution, experimental danger and time-consuming problems in teaching. The virtual simulation software on the market is mainly based on equipment operation, but lacks in-depth analysis of the process principles.
The three-dimensional model system of magnetron sputtering PVD virtual simulation is adopted, including a three-dimensional modeling module, simulation parameter setting module, simulation module and data output module. By simulating key links such as ion bombardment, target sputtering, particle transport and film growth, a deeper principle demonstration is provided.
It realizes intuitive and accurate virtual simulation of magnetron sputtering PVD technology, reduces teaching costs, reduces experimental risks, provides a more vivid educational platform, and supports the promotion and application of technology.
Smart Images
Figure CN120012534A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to a method for visualizing the principle of magnetron sputtering, and relates to a three-dimensional model system and method for virtual simulation of magnetron sputtering PVD. Background Art
[0002] Magnetron sputtering coating technology is a very important part of integrated circuit manufacturing, and teaching in this area is particularly important. However, in actual experimental teaching, there are problems such as high cost, environmental pollution, experimental dangers, and long and irreversible time. The virtual simulation technology that came into being can solve this problem more perfectly. Most of the virtual simulation teaching software on the market is based on the operability of the equipment, and there is less analysis of the principles of the process. Therefore, this patent reflects the principles of the process through three-dimensional modeling, converting the invisible microscopic animation into a visible one, which is easier for students to understand. Summary of the invention
[0003] 1. Purpose of the Invention The purpose of the present invention is to provide a three-dimensional model method for virtual simulation of magnetron sputtering PVD, which can simulate key links such as ion bombardment, target sputtering, particle transport and thin film growth in the magnetron sputtering process, provide a deeper principle and microscopic level demonstration, and provide a more intuitive and accurate virtual simulation environment for the education of magnetron sputtering PVD technology.
[0004] 2. Technical solutions The 3D model system for magnetron sputtering PVD virtual simulation includes: 3D modeling module: used to build 3D model and microscopic particle model of magnetron sputtering equipment; Simulation parameter setting module: used to set the simulation parameters of magnetron sputtering experiments; Simulation module: used to simulate the magnetron sputtering process, including ion bombardment of target, target particle sputtering, particle transport and film growth; Data output module: used to output simulation results, including three-dimensional graphics and data tables.
[0005] Preferably, the three-dimensional modeling module uses Unity 3D software to perform three-dimensional modeling.
[0006] Preferably, the simulation module uses the Monte Carlo method to perform simulation calculations.
[0007] Preferably, the data output module uses visualization technology to output data.
[0008] The three-dimensional model method of magnetron sputtering PVD virtual simulation includes the following steps: Step 1: Establish a 3D model: Use 3D modeling software to establish a 3D model of the magnetron sputtering equipment; the model should accurately reflect the structure and size of the magnetron sputtering equipment and provide a basis for subsequent simulation calculations; Step 2: Set simulation parameters: Set simulation parameters according to the actual conditions of the magnetron sputtering experiment; these simulation parameters will directly affect the accuracy and reliability of the simulation results; Step 3: Simulate the vacuuming of the cavity: There is air in the cavity, and particles such as nitrogen and oxygen are used to simulate the content of molecules in the air. Gas special effects are used to expel these particles from the cavity. This step is crucial to ensure the gas discharge and sputtering conditions during the simulation; Step 4: Simulate the background magnetic field: Use the glow effect to simulate the background magnetic field, making it more visual and intuitive; the background magnetic field has a restraining effect on the movement of charged particles and is a key factor in increasing plasma density and sputtering rate; Step 5: Simulate gas discharge: Use gas special effects to simulate gas injection, generate a microscopic particle argon model, and use discharge special effects to simulate the effect of argon being ionized as the gas is injected to form argon ions. The ions generated by gas discharge provide important conditions for the subsequent bombardment of the target and sputtering of particles; Step 6: Simulate target sputtering: The copper atom model is used as a target material to participate in sputtering. After being bombarded by argon ions, a collision animation is created to simulate sputtering, providing conditions for subsequent particle movement. Step 7: Simulate particle transport: After the copper atoms are bombarded, make a motion animation of the copper atoms to simulate the motion trajectory of the copper atoms after being sputtered, collision, scattering and deposition. Through particle transport, the film growth will be carried out later; Step 8: Simulate film growth: After many copper atoms are deposited on the wafer, they gradually become thin films. Use animation to transform microscopic atoms into macroscopic films, and the film also grows from thin to thick to simulate the film growth process. By simulating the film growth process, you can understand key parameters such as film thickness, morphology and composition; Step 9: Output results and analysis: Finally, the simulation results are output in the form of three-dimensional graphics, data tables, etc., and analyzed and compared. By comparing the simulation results with the experimental results, the accuracy and reliability of the simulation method can be verified.
[0009] Preferably, the three-dimensional model includes a vacuum chamber, a target material, a substrate, a magnetic field generating device, and the production of various microscopic particle models, including nitrogen, oxygen, argon, and argon ions.
[0010] Preferably, the gas special effects include nitrogen, oxygen and argon.
[0011] Preferably, the copper atom model is used to simulate the target material.
[0012] Preferably, the animation is used to simulate particle motion and thin film growth process.
[0013] Beneficial effects: The present invention provides an intuitive and accurate virtual simulation method for magnetron sputtering PVD, which can simulate the key links such as ion bombardment, target sputtering, particle transport and film growth in the magnetron sputtering process. Through simulation calculation, the growth of films under different parameters can be simulated, combining macroscopic and microscopic principle demonstrations, thereby providing students with a more vivid and intuitive educational platform. It reduces the risk and cost of the research and development and application of magnetron sputtering PVD technology, and provides strong support for the promotion and application of magnetron sputtering PVD technology. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 :Schematic diagram of the three-dimensional model of the magnetron sputtering equipment chamber; Figure 2 : Schematic diagram of vacuum particle distribution; Figure 3 :Schematic diagram of magnetron sputtering particle distribution; DETAILED DESCRIPTION
[0015] Embodiment 1: The three-dimensional model method of magnetron sputtering PVD virtual simulation includes the following steps: Step 1: Establish a 3D model: Use 3D modeling software to establish a 3D model of the magnetron sputtering equipment, including key components such as the vacuum chamber, target material, substrate, magnetic field generator, and the production of various microscopic particle models, including nitrogen, oxygen, argon, and argon ions; the model should accurately reflect the structure and size of the magnetron sputtering equipment, providing a basis for subsequent simulation calculations; Step 2: Set simulation parameters: According to the actual conditions of the magnetron sputtering experiment, set the simulation parameters, including gas type, gas pressure, target material type, substrate type, magnetic field strength, etc. These parameters will directly affect the accuracy and reliability of the simulation results; Step 3: Simulate the vacuuming of the cavity: There is air in the cavity, and particles such as nitrogen and oxygen are used to simulate the content of molecules in the air. Gas special effects are used to expel these particles from the cavity. This step is crucial to ensure the gas discharge and sputtering conditions during the simulation; Step 4: Simulate the background magnetic field: Use the glow effect to simulate the background magnetic field, making it more visual and intuitive. The background magnetic field has a restraining effect on the movement of charged particles and is a key factor in increasing plasma density and sputtering rate; Step 5: Simulate gas discharge: Use gas special effects to simulate gas injection, generate a microscopic particle argon model, and use discharge special effects to simulate the effect of argon being ionized as the gas is injected to form argon ions. The ions generated by gas discharge provide important conditions for the subsequent bombardment of the target and sputtering of particles; Step 6: Simulate target sputtering: The copper atom model is used as a target material to participate in sputtering. After being bombarded by argon ions, a collision animation is created to simulate sputtering, providing conditions for subsequent particle movement. Step 7: Simulate particle transport: After the copper atoms are bombarded, make a motion animation of the copper atoms to simulate the motion trajectory of the copper atoms after being sputtered, collision, scattering and deposition. Through particle transport, the film growth will be carried out later; Step 8: Simulate film growth: After many copper atoms are deposited on the wafer, they gradually become thin films. Use animation to transform microscopic atoms into macroscopic films, and the film also grows from thin to thick to simulate the film growth process. By simulating the film growth process, you can understand key parameters such as film thickness, morphology and composition; Step 9: Output results and analysis: Finally, the simulation results are output in the form of three-dimensional graphics, data tables, etc., and analyzed and compared. By comparing the simulation results with the experimental results, the accuracy and reliability of the simulation method can be verified.
[0016] The three-dimensional modeling software is Unity 3D; Example 2 The three-dimensional model system of magnetron sputtering PVD virtual simulation is characterized by comprising: 3D modeling module: used to build 3D model and microscopic particle model of magnetron sputtering equipment; Simulation parameter setting module: used to set the simulation parameters of magnetron sputtering experiments; Simulation module: used to simulate the magnetron sputtering process, including ion bombardment of target, target particle sputtering, particle transport and film growth; Data output module: used to output simulation results, including three-dimensional graphics and data tables.
[0017] Furthermore, the three-dimensional modeling module uses Unity 3D software to perform three-dimensional modeling.
[0018] Furthermore, the simulation module uses the Monte Carlo method to perform simulation calculations.
[0019] Furthermore, the data output module uses visualization technology to output data.
[0020] How it works: 1. Experimental process 1. System initialization and setup Start the magnetron sputtering virtual simulation system, perform necessary initialization settings, and input parameters such as the material and size of the target and substrate.
[0021] Set the sputtering environment parameters, such as vacuum degree, gas type, gas flow rate, etc.
[0022] Set the sputtering parameters, such as sputtering power, sputtering time, sputtering voltage and current, etc.
[0023] 2. Virtual sputtering process The magnetron sputtering process is simulated in a virtual environment, including ion bombardment of the target, target particle sputtering, particle transport and thin film growth.
[0024] Observe and record the changes of various parameters during the virtual experiment, such as sputtering rate, ion energy distribution, film thickness, etc.
[0025] 3. Data Collection and Processing After the virtual experiment is completed, relevant data such as sputtering rate, film quality, deposition efficiency, etc. are collected and processed.
[0026] Compare the processed data with the preset experimental objectives to evaluate the effectiveness of the virtual experiment.
[0027] 2. Experimental Results 1. Sputtering rate Under the set sputtering power, time and target material mass, the sputtering rate of the virtual experiment was calculated. This rate is consistent with the theoretical expectation, indicating that the virtual simulation system can accurately simulate the sputtering process.
[0028] 2. Film quality The thin films prepared by the virtual simulation system have good quality, uniform thickness and good crystallinity, which shows that the virtual simulation system can simulate the high-quality thin film preparation process.
[0029] 3. Deposition efficiency The deposition efficiency in the virtual experiment was high, which was consistent with theoretical expectations, indicating that the virtual simulation system can optimize sputtering parameters and improve deposition efficiency.
[0030] 3. Data Analysis 1. Effect of sputtering power on sputtering rate By analyzing the sputtering rate data under different sputtering powers, it is found that the higher the sputtering power, the faster the sputtering rate. This is consistent with the basic principle of magnetron sputtering, that is, the increase of sputtering power will increase the bombardment energy of ions, thereby increasing the sputtering yield of the target material.
[0031] 2. The influence of vacuum degree on film quality Comparing the film quality data under different vacuum degrees, it is found that the higher the vacuum degree, the better the film quality. High vacuum degree can reduce the collision and scattering of gas molecules and reduce the interference with sputtered particles, thereby improving the uniformity and crystallinity of the film.
[0032] 3. Effect of gas flow rate on deposition efficiency By analyzing the deposition efficiency data under different gas flow rates, it is found that the appropriate gas flow rate can improve the deposition efficiency. This is because the appropriate gas flow rate can provide enough reactive gas to promote the chemical reaction and deposition of sputtered particles; however, excessive gas flow rate will increase the collision and scattering of sputtered particles during the transmission process, reducing the deposition efficiency.
[0033] 4. Reliability evaluation of virtual simulation system The results of the virtual experiment were compared with the theoretical expectations and the actual experimental results, and it was found that the virtual simulation system has high reliability. It can accurately simulate the magnetron sputtering process and obtain experimental results that are consistent with theoretical expectations. At the same time, the virtual simulation system can also optimize sputtering parameters and improve deposition efficiency and film quality.
[0034] Summarize The present invention provides a three-dimensional model method for virtual simulation of magnetron sputtering PVD, which can simulate the key links such as ion bombardment, target sputtering, particle transport and film growth in the magnetron sputtering process, and provides a deeper level of principle and microscopic level demonstration, providing a more intuitive and accurate virtual simulation environment for the education of magnetron sputtering PVD technology. The present invention has the advantages of reducing costs, optimizing process parameters, enhancing educational effects and promoting technology promotion, and has important application value.
Claims
1. A three-dimensional model system for virtual simulation of magnetron sputtering PVD, characterized in that: include: 3D modeling module: used to build 3D model and microscopic particle model of magnetron sputtering equipment; Simulation parameter setting module: used to set the simulation parameters of magnetron sputtering experiments; Simulation module: used to simulate the magnetron sputtering process, including ion bombardment of target, target particle sputtering, particle transport and film growth; Data output module: used to output simulation results, including three-dimensional graphics and data tables.
2. The three-dimensional model system for magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The three-dimensional modeling module uses Unity 3D software to perform three-dimensional modeling.
3. The three-dimensional model system for magnetron sputtering PVD virtual simulation according to claim 1 is characterized in that: The simulation module uses the Monte Carlo method to perform simulation calculations.
4. The three-dimensional model system for magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The data output module uses visualization technology to output data.
5. A three-dimensional model method for virtual simulation of magnetron sputtering PVD, characterized in that: The following steps are involved: Step 1: Establish a 3D model: Use 3D modeling software to establish a 3D model of the magnetron sputtering equipment; Step 2: Set simulation parameters: Set simulation parameters according to the actual conditions of the magnetron sputtering experiment; Step 3: Simulate the vacuum of the cavity: There is air in the cavity, and nitrogen and oxygen particles are used to simulate the content of molecules in the air. Use gas special effects to expel these particles from the cavity; Step 4: Simulate background magnetic field: Use glow effects to simulate background magnetic field; Step 5: Simulate gas discharge: Use gas special effects to simulate gas injection, generate a microscopic particle argon model, and as the gas is injected, use discharge special effects to simulate the effect of argon being ionized to form argon ions; Step 6: Simulate target sputtering: The copper atom model is used as the target material to participate in sputtering. After being bombarded by argon ions, a collision animation is made to simulate sputtering. Step 7: Simulate particle transport: After the copper atoms are bombarded, make a motion animation of the copper atoms to simulate the motion trajectory of the copper atoms after being sputtered, collision, scattering and deposition; Step 8: Simulate film growth: After many copper atoms are deposited on the wafer, they gradually become thin films. Use animation to transform microscopic atoms into macroscopic thin films, and the film also goes from thin to thick to simulate the film growth process; Step 9: Output results and analysis: Finally, the simulation results are output in the form of three-dimensional graphics, data tables, etc., and analyzed and compared.
6. The three-dimensional model method of magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The three-dimensional model includes a vacuum chamber, a target material, a substrate, a magnetic field generating device, and the production of various microscopic particle models, including nitrogen, oxygen, argon, and argon ions.
7. The three-dimensional modeling method of magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The simulation parameters include gas type, gas pressure, target material type, substrate type, magnetic field strength, sputtering power, sputtering time, sputtering voltage and current.
8. The three-dimensional modeling method of magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The gas special effects include nitrogen, oxygen and argon.
9. The three-dimensional model method of magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The copper atom model is used to simulate the target material.
10. The three-dimensional modeling method of magnetron sputtering PVD virtual simulation according to claim 1, characterized in that: The animation described is used to simulate particle motion and film growth process.