Etching deviation compensation method and related product

Abstract

The invention relates to an etching deviation compensation method and a related product. The compensation method comprises the following steps: extracting to-be-selected line segments on an obtained design layout; a plurality of spatial measurement attributes of the to-be-selected line segment are obtained, each spatial measurement attribute is used for describing the size of the to-be-selected line segment on one spatial measurement dimension, and each spatial measurement attribute is pre-configured to have a plurality of set numerical value ranges; and determining a target deviation compensation amount according to the set numerical range to which the plurality of spatial measurement attributes of the line segment to be selected belong. According to the method, the coverage rate of the etching deviation rule on the design pattern of the chip can be improved, so that the compensation work efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an etching deviation compensation method, a computer-readable storage medium, a computer program product and a computer device. Background Art

[0002] Photolithography and etching technology are both core technologies used to manufacture very large-scale integrated circuits. Photolithography is a process in which a photolithography system uses a light source to illuminate a mask and uses a projection lens to image the integrated circuit layout on the mask onto a photoresist. Etching technology relies on plasma and other etching processes to transfer the pattern on the photoresist to a substrate mainly made of silicon. The size of the pattern on the photoresist is usually different from the size of the pattern on the substrate after etching. There is a deviation between them, which is called the etch bias. The size of the etch bias is not only related to the material of the substrate, but also to the size and type of the pattern. In order to ensure that the pattern etched on the substrate is consistent with the designed pattern Figure 1 Therefore, it is necessary to compensate for the etching deviation of the design graphics to obtain the mask graphics. In the related art, characteristic line segments are usually selected based on the spatial measurement attributes such as the length attribute (length), thickness attribute (width) and spacing attribute (space) of the line segments of the design graphics, and the corresponding compensation value is moved for each characteristic line segment of the design graphics based on the etching bias rule (etch bias rule) summarized from process experience. The design graphics of a chip include a large number of characteristic line segments with different combinations of spatial measurement attributes. When each characteristic line segment corresponds to a line of script code, etching compensation of a chip design layout requires thousands of lines of script code. The combination of all script codes is the above-mentioned etching bias rule.

[0003] When developing a new chip, the combination of spatial metric attributes of each characteristic line segment in the design pattern of the new chip may be different from that in the existing etching deviation rules. Each spatial metric attribute usually has a certain fluctuation in value. This results in a low coverage rate of the existing etching deviation rules for the new chip. In order to compensate for the etching deviation of the design pattern of the new chip, the existing etching deviation rules need to be significantly modified to cover the characteristic line segments in the design pattern of the new chip. The modification process is inefficient and the modification cycle is long. Summary of the invention

[0004] In view of the above problems, the present invention is proposed to provide an etching deviation compensation method, a computer-readable storage medium, a computer program product and a computer device that overcome the above problems or at least partially solve the above problems.

[0005] An object of the present invention is to provide an etching deviation compensation method for improving the coverage of etching deviation rules on chip design patterns, thereby improving the efficiency of etching deviation compensation work.

[0006] Specifically, according to one aspect of the present invention, the present invention provides a method for compensating etching deviation, comprising:

[0007] Extracting line segments to be selected on the acquired design layout;

[0008] Acquire multiple spatial metric attributes of the line segment to be selected, each of the spatial metric attributes is used to describe the size of the line segment to be selected in a spatial metric dimension, and each of the spatial metric attributes is pre-configured to have multiple set value ranges;

[0009] The target deviation compensation amount is determined according to the set value ranges to which the plurality of spatial metric attributes of the line segment to be selected respectively belong.

[0010] Optionally, the plurality of spatial metric attributes include a length attribute, a thickness attribute and a spacing attribute.

[0011] Optionally, the step of determining the target deviation compensation amount according to the set value ranges to which the plurality of spatial metric attributes of the line segment to be selected belong respectively includes:

[0012] Determining the set value range to which each of the plurality of spatial metric attributes belongs;

[0013] Matching a value range combination according to the determined multiple set value ranges, each of the value range combinations includes a set value range of the multiple spatial metric attributes and is pre-configured with a corresponding deviation compensation amount;

[0014] The deviation compensation amount corresponding to the matched numerical range combination is used as the target deviation compensation amount.

[0015] Optionally, the process of setting the set value range for each of the spatial metric attributes includes:

[0016] Setting a plurality of reference values ​​at intervals within a range of values ​​covered by the spatial metric attribute according to a first preset interval rule;

[0017] Configuring a tolerance threshold for each of the reference values, wherein the size of the tolerance threshold is positively correlated with the size of the reference value;

[0018] The set value range is obtained by taking each of the reference values ​​as the midpoint of the interval and extending the corresponding tolerances to both sides.

[0019] Optionally, the process of setting a corresponding deviation compensation amount for each of the numerical range combinations includes:

[0020] Determine a plurality of reference attribute combinations, each of the reference attribute combinations comprising a reference value of the plurality of spatial metric attributes;

[0021] Configuring a corresponding deviation compensation amount for each of the reference attribute combinations;

[0022] The deviation compensation amount corresponding to the reference attribute combination is configured as the deviation compensation amount of the value range combination to which the reference attribute combination belongs.

[0023] Optionally, configuring a tolerance threshold for each of the reference values ​​includes:

[0024] Dividing the value coverage range of the spatial metric attribute into a plurality of value intervals according to a first preset partitioning rule, each of the value intervals having a plurality of the set value ranges;

[0025] A corresponding tolerance threshold is configured for each of the numerical intervals, and the size of the tolerance threshold is positively correlated with the size of the numerical value in the numerical interval;

[0026] The tolerance threshold corresponding to the numerical interval is configured as the tolerance threshold of each of the reference values ​​in the numerical interval.

[0027] Optionally, configuring a corresponding tolerance threshold for each of the numerical intervals includes:

[0028] Determine a minimum tolerance threshold and a maximum tolerance threshold according to the process technology of the design layout;

[0029] Setting a plurality of tolerance thresholds at intervals between the minimum tolerance threshold and the maximum tolerance threshold according to a second preset interval rule;

[0030] The corresponding tolerance threshold is allocated to each of the numerical intervals according to the magnitude of the numerical values ​​in the numerical intervals.

[0031] Optionally, in each of the reference values ​​of the plurality of spatial metric attributes, two reference values ​​of the same size are both configured with the tolerance threshold of the same size.

[0032] According to another aspect of the present invention, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above-mentioned etching deviation compensation method are implemented.

[0033] According to another aspect of the present invention, a computer program product is provided, comprising a computer program, which implements the steps of the above-mentioned etching deviation compensation method when executed by a processor.

[0034] According to yet another aspect of the present invention, a computer device is provided, comprising a memory, a processor, and a computer program stored in the memory, wherein the processor executes the computer program to implement the steps of the above-mentioned etching deviation compensation method.

[0035] The etching deviation compensation method of the present invention establishes a correspondence between a set value range to which multiple spatial measurement attributes belong and a deviation compensation amount, and can determine a target deviation compensation amount according to the set value range to which multiple spatial measurement attributes of the line segment to be selected belong, and then adjust the line segment to be selected. Compared with the existing etching deviation rule of "point-to-point" correspondence, this scheme improves the coverage of the etching deviation rule on the design pattern of the chip by establishing the etching deviation rule of "spatial range-to-point" correspondence, and achieves the effect of improving the efficiency of compensation work.

[0036] Based on the following detailed description of specific embodiments of the present invention in conjunction with the accompanying drawings, those skilled in the art will become more aware of the above and other objects, advantages and features of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Hereinafter, some specific embodiments of the present invention will be described in detail in an exemplary and non-limiting manner with reference to the accompanying drawings. The same reference numerals in the accompanying drawings indicate the same or similar components or parts. It should be understood by those skilled in the art that these drawings are not necessarily drawn to scale. In the accompanying drawings:

[0038] Figure 1 is a flow chart of a compensation method according to an embodiment of the present invention;

[0039] Figure 2 is a schematic flow chart of obtaining a set value range according to a compensation method of an embodiment of the present invention;

[0040] Figure 3 is a schematic diagram of a flow chart of configuring a tolerance threshold for a reference value according to a compensation method of an embodiment of the present invention;

[0041] Figure 4 is a schematic diagram of a flow chart of configuring a tolerance threshold for a numerical interval according to a compensation method of an embodiment of the present invention;

[0042] Figure 5 is a schematic diagram of a flow chart of obtaining a target deviation compensation amount according to a compensation method of an embodiment of the present invention;

[0043] Figure 6 is a schematic diagram of a flow chart of configuring a deviation compensation amount for a value range combination according to a compensation method of an embodiment of the present invention;

[0044] Figure 7is a flow chart of a compensation method according to another embodiment of the present invention;

[0045] Figure 8 is a partial schematic diagram of a design layout of a compensation method according to an embodiment of the present invention;

[0046] Fig. 9 is a schematic diagram of spatial metric properties of a compensation method according to an embodiment of the present invention;

[0047] Fig.10 is a schematic diagram of a computer program product according to an embodiment of the present invention;

[0048] Fig.11 is a schematic diagram of a computer-readable storage medium according to an embodiment of the present invention; and

[0049] Fig.12 is a schematic diagram of a computer device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0050] The purpose of the etching deviation compensation method of this embodiment is to improve the coverage of the etching deviation rule on the design pattern of the chip, thereby improving the efficiency of the etching deviation compensation work.

[0051] Figure 1 FIG. 1 is a flow chart of a compensation method according to an embodiment of the present invention. The method may generally include:

[0052] S100, extracting line segments to be selected on the acquired design layout;

[0053] S200, obtaining multiple spatial metric attributes of the line segment to be selected, each spatial metric attribute is used to describe the size of the line segment to be selected in a spatial metric dimension, and each spatial metric attribute is pre-configured to have multiple set value ranges;

[0054] S300, determining a target deviation compensation amount according to set value ranges to which multiple spatial metric attributes of the line segment to be selected belong.

[0055] The design layout is an electronic layout of the chip layout design. In this embodiment, the design layout can be a mask layout to be used for etching deviation compensation, and a design pattern is arranged on the mask layout, and the design pattern illustrates the shape of the photoresist in the etching process. Figure 8As shown, the shaded area may be the photoresist covered area, and the blank area may be the area to be removed by photolithography and etching. The design graphics usually include several polygons, such as rectangles of different sizes. The polygon is composed of multiple line segments, each of which has multiple spatial measurement attributes, and each spatial measurement attribute is used to describe the size of the line segment in a spatial measurement dimension. The multiple spatial measurement attributes include but are not limited to the length attribute (length), thickness attribute (width), spacing attribute (space) of the line segment, uniformity of the graphic distribution, graphic aspect ratio, graphic directionality, etc. Take the polygon as a rectangle as an example, such as Fig. 9 As shown in FIG. 1 , the figure illustrates multiple spatial metric attributes of a line segment (thick solid line in the figure) in the design figure, wherein the length attribute (see length in the figure) illustrates the length of the line segment, the thickness attribute (see width in the figure) illustrates the distance between the line segment and the opposite side of the same rectangle, and the spacing attribute (see space in the figure) illustrates the distance between the line segment and the opposite side of the adjacent rectangle. During the etching process, the size of each spatial metric attribute of the line segment may affect the distribution of the etchant (such as plasma, etc.) and / or the physical and chemical reaction between the etchant and the substrate, thereby causing etching deviation. Therefore, each line segment or each combination of spatial metric attributes (composed of multiple spatial metric attributes, such as {length attribute, thickness attribute, spacing attribute}) needs to be set with a corresponding deviation compensation amount, and this corresponding relationship is the etching deviation rule. By pre-moving the line segment with the deviation compensation amount corresponding to its etching deviation in the mask layout design stage, the etching deviation can be offset in the actual etching process, thereby improving the manufacturing quality of the chip.

[0056] In the related art, each rule in the existing etching deviation rules is a "point-to-point" correspondence, that is, one spatial measurement attribute combination corresponds to one deviation compensation amount. It should be understood that each spatial measurement attribute is set as a coordinate axis of the vector space, and a spatial measurement attribute combination is mapped to a point in the vector space. For example, when the spatial measurement attribute combination includes two attributes, namely, the length attribute and the thickness attribute, the vector space is a two-dimensional space, and a spatial measurement attribute combination is mapped to a point in the two-dimensional space. For another example, when the spatial measurement attribute combination includes three attributes, namely, the length attribute, the thickness attribute, and the spacing attribute, the vector space is a three-dimensional space, and a spatial measurement attribute combination is mapped to a point in the three-dimensional space. For another example, when the spatial measurement attribute combination includes four attributes, the vector space is a four-dimensional space, and a spatial measurement attribute combination is mapped to a point in the four-dimensional space.

[0057] When developing a new chip, the value of any spatial metric attribute in the spatial metric attribute combination of the line segment may fluctuate (for example, from {100, 80, 60} to {104, 78, 62}, and the unit of the spatial metric attribute may be nanometers), so it is necessary to add a corresponding new rule. Each new line segment in the new chip needs to add a new rule, which leads to low efficiency of the modification process and a long modification cycle.

[0058] In this embodiment, the "point-to-point" correspondence of the existing etching deviation rule is improved to a "spatial range-to-point" correspondence. Specifically, a value of the spatial metric attribute is expanded into a set value range, so that a point corresponding to the spatial metric attribute combination is expanded into a spatial range in the vector space. That is, in the etching deviation rule of this embodiment, one spatial range corresponds to one deviation compensation amount.

[0059] Exemplarily, the spatial metric attribute combination includes three attributes: length attribute, thickness attribute and spacing attribute. If a certain spatial metric attribute combination is {100, 80, 60}, then the spatial metric attribute combination is mapped to a point in the vector space. After expansion, it can become {[95, 105], [76, 84], [57, 63]}, which is mapped to a volume block (spatial range) in the vector space. Any point in the volume block corresponds to the same deviation compensation amount. The length attribute, thickness attribute and spacing attribute are all set with multiple set value ranges in their value coverage ranges. In this way, multiple volume blocks are formed in the vector space, and each volume block corresponds to a deviation compensation amount.

[0060] In this embodiment, after obtaining the spatial metric attribute combination of the line segment to be selected, the preset numerical range of each spatial metric attribute can be searched and matched. When it is determined that the spatial metric attribute combination is within a certain volume block range, the deviation compensation amount corresponding to the volume block can be determined as the target deviation compensation amount of the line segment to be selected. For example, when a spatial metric attribute combination of {100, 80, 60} becomes {104, 78, 62} in the new chip, it will be within the range of, for example, the volume block {[95, 105], [76, 84], [57, 63]}, so its target deviation compensation amount can be determined. After obtaining the target deviation compensation amount of the line segment to be selected, the line segment to be selected can be moved a distance corresponding to its target deviation compensation amount. After adjusting all the line segments that need to be compensated in the design layout, the compensated mask layout is obtained.

[0061] The etching deviation compensation method of this embodiment sets the etching deviation rule of the correspondence relationship of "spatial range to point". When one or more spatial measurement attributes in the spatial measurement attribute combination of the line segment of the new chip fluctuate within a certain range, its spatial measurement attribute combination will still be in the same spatial range. Therefore, the deviation compensation amount corresponding to the spatial range can be determined as the target deviation compensation amount of the line segment, thereby improving the coverage of the etching deviation rule on the design graphics of the chip and achieving the effect of improving the efficiency of the compensation work.

[0062] In some embodiments of the compensation method of the present invention, the plurality of spatial metric attributes include a length attribute (length), a thickness attribute (width) and a spacing attribute (space). Compared with the uniformity of the pattern distribution, the aspect ratio of the pattern, the directionality of the pattern and other attributes, the length attribute, thickness attribute and spacing attribute of the line segment have a greater influence on the size of the etching deviation during the etching process. On the one hand, the etching deviation of the line segment can be more accurately predicted based on the length attribute, thickness attribute and spacing attribute of the line segment. On the other hand, by reducing the number of parameters in the combination of spatial metric attributes, the calculation rate can be increased, thereby improving the efficiency of the compensation work.

[0063] In some embodiments of the compensation method of the present invention, Figure 5 As shown, the step of determining the target deviation compensation amount according to the set value ranges to which the multiple spatial metric attributes of the line segment to be selected belong respectively includes:

[0064] S311, determining a set value range to which each of the plurality of spatial metric attributes belongs;

[0065] S313, matching a value range combination according to the determined multiple set value ranges, each value range combination including a set value range of multiple spatial metric attributes and pre-configured with a corresponding deviation compensation amount;

[0066] S315: The deviation compensation amount corresponding to the matched numerical range combination is used as the target deviation compensation amount.

[0067] In each spatial metric attribute, multiple set numerical ranges are pre-set. Generally speaking, the numerical range of the length attribute, thickness attribute or spacing attribute of the line segment is from a few nanometers to hundreds of nanometers, and the width of each set numerical range can be set to a few nanometers. For example, the numerical range [57, 63] is set, and its width is 6nm. In this way, multiple numerical range combinations can be formed, such as {[95, 105], [76, 84], [57, 63]}, etc. Each numerical range combination is mapped into a volume block (spatial range) in the vector space, and any point in the volume block corresponds to the same deviation compensation amount.

[0068] In this embodiment, each of the multiple spatial metric attributes of the line segment to be selected can be mapped to the vector space in sequence, and the set value range of each attribute can be determined, and then the value range combination or volume block of the line segment to be selected can be determined, and then the target deviation compensation amount can be obtained. For example, if the spatial metric attribute combination of the line segment to be selected is {104, 78, 62}, it can be determined that it is in the value range combination {[95, 105], [76, 84], [57, 63]}, and its target deviation compensation amount is the deviation compensation amount corresponding to the value range combination.

[0069] In some embodiments of the compensation method of the present invention, Figure 2 As shown, the process of setting the value range for each spatial metric attribute setting includes:

[0070] S211, setting a plurality of reference values ​​at intervals within a range of values ​​covered by the spatial metric attribute according to a first preset interval rule;

[0071] S213, configuring a tolerance threshold for each benchmark value, wherein the size of the tolerance threshold is positively correlated with the size of the benchmark value;

[0072] S215, taking each reference value as the midpoint of the interval, the corresponding tolerance is expanded to both sides to obtain a set value range.

[0073] It should be understood that, in theory, each spatial metric attribute combination should determine a deviation compensation amount based on calculation and / or experience. When the range of the numerical fluctuation of each attribute in the spatial metric attribute combination is small, the impact on the value of the etching deviation is weak, or the impact on the value of the etching deviation is within an acceptable range. It is based on this that the embodiment of the present invention expands the spatial metric attribute combination into a numerical range combination. However, when the range of the numerical fluctuation of each attribute in the spatial metric attribute combination is large, the impact on the value of the etching deviation is strong, or the impact on the value of the etching deviation will exceed the acceptable range. In other words, when the width of the set numerical range of each spatial metric attribute is large (the volume block of the numerical range combination in the vector space is also large), the corresponding deviation compensation amount deviates greatly from the actual etching deviation in the etching process, which will lead to over-compensation or under-compensation.

[0074] In this embodiment, the tolerance threshold is used to limit the width of the set value range to prevent over-compensation or under-compensation. Taking the spatial metric attribute as the length attribute as an example, the reference value can be 100, 80, 60, etc. (the unit can be nanometers), and the corresponding tolerance threshold can be 5, 4, 3, etc., and the corresponding set value range can be [95, 105], [76, 84], [57, 63], etc. It should be understood that the set value range can be a closed interval, a left-open and right-closed interval, or a left-closed and right-open interval, which can be set as needed.

[0075] In this embodiment, the size of the tolerance threshold is positively correlated with the size of the reference value, and the tolerance threshold corresponding to the larger value of two adjacent reference values ​​is greater than or equal to the tolerance threshold of the smaller value. In this way, the ratio of the width of the set value range of the reference value to the reference value is always within an acceptable range, so as to avoid or reduce over-compensation or under-compensation as much as possible.

[0076] In this embodiment, the first preset interval rule may be equal or unequal intervals. Preferably, the interval between two adjacent reference values ​​is the sum of the tolerance thresholds corresponding to the two reference values. Taking the spatial metric attribute as the length attribute as an example, the adjacent reference values ​​may be 90 and 100, and the tolerance thresholds corresponding to the two reference values ​​may both be 5, so the interval between the two reference values ​​is 10. In this way, the two set value ranges expanded from the two reference values ​​may be (85, 95], (95, 105], and the two set value ranges are connected, thereby covering a longer continuous interval, further improving the coverage of the etching deviation rule for the design graphics of the chip.

[0077] In some embodiments of the compensation method of the present invention, Figure 6 As shown, the process of setting the corresponding deviation compensation amount for each value range combination includes:

[0078] S331, determining a plurality of benchmark attribute combinations, each benchmark attribute combination including a benchmark value of a plurality of spatial metric attributes;

[0079] S333, configuring a corresponding deviation compensation amount for each reference attribute combination;

[0080] S335: configure the deviation compensation amount corresponding to the reference attribute combination as the deviation compensation amount of the value range combination to which the reference attribute combination belongs.

[0081] Each reference attribute combination corresponds to a line segment and is configured with a corresponding deviation compensation amount. The reference attribute combination can be a spatial measurement attribute combination of a rule in an existing etching deviation rule, or it can be a spatial measurement attribute combination obtained by calculation and / or experience. Exemplarily, the spatial measurement attribute combination includes three attributes: length attribute, thickness attribute and spacing attribute. A reference attribute combination in an existing etching deviation rule is {100, 80, 60}, and its corresponding deviation compensation amount is 15.6nm. After expanding it, a numerical range combination {[95, 105], [76, 84], [57, 63]} can be obtained, and 15.6nm is configured as the deviation compensation amount of this numerical range combination.

[0082] In this embodiment, each rule in the existing etching deviation rules can be expanded by the above method, thereby improving the "point-to-point" correspondence into a "spatial range-to-point" correspondence. The scheme is relatively simple to operate, and the correspondence between multiple value range combinations and deviation compensation amounts can be quickly obtained. In actual use, each rule in the existing etching deviation rules can be expanded first, and then the volume overlapped parts in the vector space can be deduplicated. It is also possible to first select multiple important rules from the existing etching deviation rules, and then expand them, so as to avoid the intersection or overlap of each value range combination in the vector space.

[0083] In some embodiments of the compensation method of the present invention, Figure 3 As shown, configuring a tolerance threshold for each benchmark value includes:

[0084] S231, dividing the value coverage range of the spatial metric attribute into a plurality of value intervals according to a first preset partitioning rule, each value interval having a plurality of set value ranges;

[0085] S233, configuring a corresponding tolerance threshold for each numerical interval, wherein the size of the tolerance threshold is positively correlated with the size of the numerical value in the numerical interval;

[0086] S235: configuring the tolerance threshold corresponding to the numerical interval as the tolerance threshold of each reference numerical value in the numerical interval.

[0087] The first preset partitioning rule may be an equal width rule or an unequal width rule. Taking the spatial measurement attribute as a length attribute as an example, please refer to Table 1, which is a numerical interval-tolerance threshold correspondence table, where INF indicates the upper limit value of the numerical coverage range, the unit of the length attribute corresponding to the numerical value in the numerical interval is nm, and the unit of the tolerance threshold is nm. In Table 1, the numerical coverage range of the spatial measurement attribute is divided into 8 numerical intervals, and each set numerical range in a numerical interval corresponds to a tolerance threshold. For different numerical intervals, the size of the tolerance threshold is positively correlated with the size of the numerical value in the numerical interval.

[0088] Value range (nm) Tolerance threshold (nm) (0，20] 1 (20，40] 2 (40，60] 3 (60，80] 4 (80，100] 5 (100，120] 6 (120，300] 7 (300, INF] 8

[0089] Table 1

[0090] By dividing the value intervals and configuring the tolerance thresholds accordingly, the corresponding set value ranges can be quickly configured for each benchmark attribute combination, thereby improving the efficiency of constructing new etching deviation rules.

[0091] In some embodiments of the compensation method of the present invention, Figure 4 As shown, the configuration of the corresponding tolerance threshold for each numerical interval includes:

[0092] S251, determining a minimum tolerance threshold and a maximum tolerance threshold according to a process technology of the design layout;

[0093] S253, setting a plurality of tolerance thresholds between the minimum tolerance threshold and the maximum tolerance threshold according to a second preset interval rule;

[0094] S255: assigning a corresponding tolerance threshold to each numerical interval according to the magnitude of the numerical value in each numerical interval.

[0095] Generally, under the same process technology, the same type of design graphics (such as the same component) of different chip design layouts have similarities, and their size fluctuations usually have an upper limit value. Through this upper limit value, the maximum tolerance threshold corresponding to the process technology can be determined. The minimum tolerance threshold can be 0, 1nm, etc. Taking the 28nm process technology as an example, the size difference of the same type of graphics in its metal layer usually does not exceed 5nm, and the maximum tolerance threshold can be set to 8nm. In this way, when each benchmark attribute in the existing etching deviation rule is expanded into a set numerical range, and each benchmark attribute combination is expanded into a numerical range combination, the spatial measurement attribute combination of each line segment to be selected of the new chip with the same process can be covered, thereby improving the coverage of the new etching deviation rule.

[0096] For different process technologies, corresponding minimum tolerance threshold and maximum tolerance threshold may be set, which will not be described in detail here.

[0097] In this embodiment, the second preset interval rule can be equal or unequal intervals. Please refer to Table 1, which is a numerical interval-tolerance threshold correspondence table. In Table 1, the minimum tolerance threshold is 1nm, the maximum tolerance threshold is 8nm, 6 tolerance thresholds are set at equal intervals, and the 8 tolerance thresholds are assigned to each numerical interval according to the size of the value in each numerical interval. By setting the tolerance threshold at intervals and assigning it to each numerical interval, the corresponding set numerical range can be quickly configured for each benchmark attribute combination, thereby improving the efficiency of constructing a new etching deviation rule.

[0098] In some embodiments of the compensation method of the present invention, in each reference value of multiple spatial metric attributes, two reference values ​​of the same size are configured with the same tolerance threshold. In other words, a value interval-tolerance threshold correspondence table can be used for length attributes, thickness attributes, and spacing attributes. In this way, the efficiency of constructing new etching deviation rules can be improved.

[0099] In some embodiments of the compensation method of the present invention, Figure 7 As shown, the compensation methods include:

[0100] S511, obtaining a design layout to be compensated;

[0101] S512, obtaining an existing etching deviation rule;

[0102] S513, obtaining a numerical range-tolerance threshold correspondence table;

[0103] S514, traversing the existing etching deviation rules according to the value range-tolerance threshold correspondence table, and selecting multiple specific line segments from the existing etching deviation rules as multiple reference attribute combinations;

[0104] S515, expanding each reference attribute combination according to the value range-tolerance threshold correspondence table to obtain multiple value range combinations, and configuring corresponding deviation compensation amounts one by one, thereby generating a new etching deviation rule;

[0105] S516, adjusting the design layout to be compensated according to the new etching deviation rule to obtain a mask pattern.

[0106] The flow chart provided by the present embodiment is not intended to indicate that the operation of the method will be performed in any particular order, or that all operations of the method are included in all every case. In addition, the method may include additional operations. Within the scope of the technical thinking provided by the present embodiment method, additional changes may be made to the above method.

[0107] It should be understood that in some embodiments, each part can be implemented by hardware, software, firmware or a combination thereof. In the above embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system.

[0108] The embodiment of the present invention further provides a computer program product 10 , a computer readable storage medium 20 , and a computer device 30 . Fig.10 is a schematic diagram of a computer program product 10 according to an embodiment of the present invention, Fig.11 is a schematic diagram of a computer-readable storage medium 20 according to an embodiment of the present invention, Fig.12 is a schematic diagram of a computer device 30 according to an embodiment of the present invention. The computer program product 10 includes a computer program 11, which implements the steps of any of the above compensation methods when executed by a processor 32. The computer readable storage medium 20 stores the above computer program 11, which implements the steps of any of the above compensation methods when executed by the processor 32. The computer device 30 may include a memory 31, a processor 32, and the computer program 11 stored in the memory 31 and running on the processor 32.

[0109] The computer program 11 for performing the operation of the present invention may be an assembly instruction, an instruction set architecture (ISA) instruction, a machine instruction, a machine-related instruction, a microcode, a firmware instruction, a state setting data, a configuration data of an integrated circuit, or a source code or an object code written in any combination of one or more programming languages ​​and process programming languages. The computer program 11 may be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the latter case, the remote computer may be connected to the user's computer via any type of network (including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., using an Internet service provider via the Internet). In some embodiments, in order to perform various aspects of the present invention, an electronic circuit including, for example, a programmable logic circuit, a field programmable gate array (FPGA) or a programmable logic array (PLA) may execute computer-readable program instructions by utilizing the state information of the computer-readable program instructions to personalize the electronic circuit.

[0110] In the description of this embodiment, the computer program product 10 is a related product including the computer program 11 .

[0111] For the purpose of the description of the present embodiment, the computer readable storage medium 20 is a tangible device capable of retaining and storing the computer program 11, which can be any device that can contain, store, communicate, propagate or transmit the computer program 11 for use with an instruction execution system, device or apparatus or in conjunction with these instruction execution systems, devices or apparatuses. More specific examples (a non-exhaustive list) of the computer readable storage medium 20 include the following: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), a static random access memory (SRAM), a portable compact disk read-only memory (CD-ROM), a digital versatile disk (DVD), a memory stick, a floppy disk, a mechanical encoding device, and any suitable combination of the above.

[0112] The computer device 30 may be, for example, a server, a desktop computer, a notebook computer, a tablet computer, or a smart phone. In some examples, the computer device 30 may be a cloud computing node. The computer device 30 may be described in the general context of computer system executable instructions (such as program modules) executed by a computer system. Typically, a program module may include routines, programs, target programs, components, logic, data structures, etc. that perform specific tasks or implement specific abstract data types. The computer device 30 may be implemented in a distributed cloud computing environment where remote processing devices linked via a communication network perform tasks. In a distributed cloud computing environment, program modules may be located on a local or remote computing system storage medium including a storage device.

[0113] The computer device 30 may include a processor 32 adapted to execute stored instructions, and a memory 31 providing temporary storage space for the operation of the instructions during operation. The processor 32 may be a single-core processor, a multi-core processor, a computing cluster, or any number of other configurations. The memory 31 may include a random access memory (RAM), a read-only memory, a flash memory, or any other suitable storage system.

[0114] The computer device 30 may also include a network adapter / interface and an input / output (I / O) interface. The I / O interface allows data to be input and output with external devices that may be connected to the computer device. The network adapter / interface may provide communication between the computer device and a network, which is typically shown as a communication network.

[0115] At this point, those skilled in the art should recognize that, although multiple exemplary embodiments of the present invention have been shown and described in detail herein, many other variations or modifications that conform to the principles of the present invention can still be directly determined or derived based on the content disclosed in the present invention without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be understood and recognized as covering all these other variations or modifications.

Claims

1. A method for compensating etching deviation, characterized in that: include: Extracting line segments to be selected on the acquired design layout; Acquire multiple spatial metric attributes of the line segment to be selected, each of the spatial metric attributes is used to describe the size of the line segment to be selected in a spatial metric dimension, and each of the spatial metric attributes is pre-configured to have multiple set value ranges; The target deviation compensation amount is determined according to the set value ranges to which the plurality of spatial metric attributes of the line segment to be selected respectively belong.

2. The method for compensating etching deviation according to claim 1, characterized in that: The step of determining the target deviation compensation amount according to the set value ranges to which the plurality of spatial metric attributes of the line segment to be selected belong respectively comprises: Determining the set value range to which each of the plurality of spatial metric attributes belongs; Matching a value range combination according to the determined multiple set value ranges, each of the value range combinations includes a set value range of the multiple spatial metric attributes and is pre-configured with a corresponding deviation compensation amount; The deviation compensation amount corresponding to the matched numerical range combination is used as the target deviation compensation amount.

3. The method for compensating etching deviation according to claim 2, characterized in that: The process of setting the set value range for each of the spatial metric attributes includes: Setting a plurality of reference values ​​at intervals within a range of values ​​covered by the spatial metric attribute according to a first preset interval rule; Configuring a tolerance threshold for each of the reference values, wherein the size of the tolerance threshold is positively correlated with the size of the reference value; The set value range is obtained by taking each of the reference values ​​as the midpoint of the interval and extending the corresponding tolerances to both sides.

4. The method for compensating etching deviation according to claim 3, characterized in that: The process of setting the corresponding deviation compensation amount for each of the numerical range combinations includes: Determine a plurality of reference attribute combinations, each of the reference attribute combinations comprising a reference value of the plurality of spatial metric attributes; Configuring a corresponding deviation compensation amount for each of the reference attribute combinations; The deviation compensation amount corresponding to the reference attribute combination is configured as the deviation compensation amount of the value range combination to which the reference attribute combination belongs.

5. The method for compensating etching deviation according to claim 3, characterized in that: The configuration of a tolerance threshold for each of the reference values ​​includes: Dividing the value coverage range of the spatial metric attribute into a plurality of value intervals according to a first preset partitioning rule, each of the value intervals having a plurality of the set value ranges; A corresponding tolerance threshold is configured for each of the numerical intervals, and the size of the tolerance threshold is positively correlated with the size of the numerical value in the numerical interval; The tolerance threshold corresponding to the numerical interval is configured as the tolerance threshold of each of the reference values ​​in the numerical interval.

6. The method for compensating etching deviation according to claim 5, characterized in that: The configuration of a corresponding tolerance threshold for each of the numerical intervals includes: Determine a minimum tolerance threshold and a maximum tolerance threshold according to the process technology of the design layout; Setting a plurality of tolerance thresholds at intervals between the minimum tolerance threshold and the maximum tolerance threshold according to a second preset interval rule; The corresponding tolerance threshold is allocated to each of the numerical intervals according to the magnitude of the numerical values ​​in the numerical intervals.

7. The method for compensating etching deviation according to any one of claims 3 to 6, characterized in that: In each of the reference values ​​of the plurality of spatial metric attributes, two reference values ​​having the same value are both configured with the tolerance threshold having the same value.

8. A computer-readable storage medium, characterized in that: A computer program is stored thereon, and when the computer program is executed by a processor, the steps of the method for compensating etching deviation according to any one of claims 1 to 7 are implemented.

9. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method for compensating etching deviation according to any one of claims 1 to 7 are implemented.

10. A computer device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory, wherein the processor executes the computer program to implement the steps of the method for compensating etching deviation according to any one of claims 1 to 7.

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