Preparation method of Mo2CTx / Mo9O26 quantum dot heterostructure electrode material

The small layer of Mo2CTx MXene prepared by hydrochloric acid etching method and ultrasonic-assisted pre-intercalation treatment was carried out, and converted into Mo9O26 quantum dots through oxidation to form a Mo2CTx/Mo9O26 quantum dot heterostructure, which solved the problem of lower specific capacity and re-stack of the MXenes electrode material, and significantly improved the cyclic stability and rate performance.

CN120015800AActive Publication Date: 2025-05-16JILIN UNIVERSITY
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Patent Information

Application Number
CN202510175131.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-18
Publication Date
2025-05-16
Estimated Expiration
2045-02-18

AI Technical Summary

Technical Problem

The specific capacity of the existing MXenes electrode materials is relatively low, and re-stacking is prone to occur during charging and discharging, resulting in poor rate performance and rapid attenuation of specific capacity.

Method used

Multi-layer Mo2CTx MXene was prepared by hydrochloric acid etching method, and pre-intercalation was performed through ultrasonic assisted method to expand the layer spacing. Then, some of the few-layer Mo2CTx MXene was ultrasonic broken and oxidized and converted into Mo9O26 quantum dots to form a small-layer Mo2CTx/Mo9O26 quantum dot heterostructure.

Benefits of technology

The transportation and storage space of electrolyte Li+ is significantly expanded, the re-stack of Mo2CTx MXene is suppressed, the charge storage site is improved, the cycle stability and rate performance is significantly improved, and the reversible charge and discharge with high specific capacity is achieved.

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Abstract

The invention is suitable for the technical field of new energy, and provides a preparation method of a Mo2CTx / Mo9O26 quantum dot heterostructure electrode material. According to the preparation method, an organic quaternary ammonium cation is taken as an intercalator, and pre-intercalation treatment is carried out on multi-layer Mo2CTx MXene, so that few-layer Mo2CTx MXene is prepared. Meanwhile, part of the few-layer Mo2CTx MXene is converted into Mo9O26 quantum dots, and finally the few-layer Mo2CTx / Mo9O26 quantum dot heterostructure negative electrode material is obtained. In the prepared few-layer Mo2CTx / Mo9O26 quantum dot heterostructure negative electrode material, the few-layer Mo2CTx MXene and the Mo9O26 quantum dots have a synergistic effect, so that the few-layer Mo2CTx / Mo9O26 quantum dot heterostructure negative electrode material shows excellent cycling stability. And after 100 cycles under the current density of 200mAg <-1 >, the excellent reversible specific capacity of 631.9 mAh g <-1 > is shown.
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Citation Information

Patent Citations

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  • Dispersion and stabilization of mxene materials and mxene materials for energy storage applications

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