Photoelectric conversion device, apparatus and method of manufacturing same

Abstract

The present application provides a photoelectric conversion device including: a semiconductor substrate; the P-type doped region and / or the N-type doped region are / is arranged in the semiconductor substrate, and a PN junction formed by the P-type doped region and the N-type doped region forms a corresponding depletion region; or the semiconductor substrate and the PN junction formed by the P-type doped region or the N-type doped region form corresponding depletion regions; the depletion region adjusting structure is arranged in the semiconductor base material and used for limiting expansion of the depletion region, the semiconductor base material comprises a silicon substrate on an insulator and an epitaxial layer growing on the silicon substrate on the insulator, the silicon substrate on the insulator comprises top silicon, an oxide layer and bottom silicon which are sequentially stacked, and the top silicon, the oxide layer and the bottom silicon are sequentially stacked. The epitaxial layer grows from the top layer silicon and is obtained by highly doping the top layer silicon as a highly doped region of the depletion region adjusting structure. The invention further provides a photoelectric sensing device and a manufacturing method.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a photoelectric conversion device, apparatus and a manufacturing method thereof. Background Art

[0002] Photon detection efficiency (PDE) is a key factor in measuring the detection capability of single-photon avalanche diodes. At present, in order to improve the photon detection efficiency, an epitaxial layer with high resistance is usually used as the light absorption area. The epitaxial layer with high resistance has a higher photoelectric conversion efficiency than the epitaxial layer with low resistance. However, processing deviations in the production process can easily cause an excessively large depletion region to form in the high-resistance epitaxial layer, which may have an adverse effect on the performance of the device. Summary of the invention

[0003] In view of this, the embodiments of the present application are directed to providing a photoelectric conversion device, an apparatus and a manufacturing method thereof to solve the problems in the prior art.

[0004] In a first aspect, a photoelectric conversion device is provided, comprising: a semiconductor substrate; a P-type doped region and / or an N-type doped region, which is arranged in the semiconductor substrate, and a PN junction formed by the P-type doped region and the N-type doped region or the semiconductor substrate and the P-type doped region or the N-type doped region respectively forms a corresponding depletion region; a depletion region adjustment structure, which is arranged in the semiconductor substrate and is used to limit the expansion of the depletion region, and the semiconductor substrate comprises a silicon substrate on an insulator and an epitaxial layer grown on the silicon substrate on an insulator, and the silicon substrate on an insulator comprises a top silicon layer, an oxide layer and a bottom silicon layer stacked in sequence, and the epitaxial layer is grown on the top silicon layer, and is obtained by highly doping the top silicon layer as a high-doped region of the depletion region adjustment structure.

[0005] In a second aspect, a photoelectric sensing device is provided, comprising a photoelectric conversion device as described in any implementation of the first aspect, wherein the photoelectric sensing device obtains relevant information by sensing an electrical signal generated in response to a light signal received by the photoelectric conversion device.

[0006] According to a third aspect, an electronic device is provided, comprising the photoelectric sensing device according to the second aspect, wherein the electronic device is configured to execute a corresponding function according to relevant information acquired by sensing an electrical signal by the photoelectric sensing device.

[0007] In a fourth aspect, a method for manufacturing a photoelectric conversion device is provided, comprising: providing a semiconductor substrate; forming a P-type doped region and / or an N-type doped region on the semiconductor substrate, wherein a PN junction formed by the P-type doped region and the N-type doped region or the semiconductor substrate and the P-type doped region or the N-type doped region respectively forms a corresponding depletion region; the semiconductor substrate comprises a silicon substrate on an insulator, wherein the silicon substrate on an insulator comprises a top silicon layer, an oxide layer and a bottom silicon layer stacked in sequence, an epitaxial layer is grown on the top silicon layer, and the top silicon layer is highly doped to form a highly doped region as a depletion region regulating structure, wherein the depletion region regulating structure is used to limit the expansion of the depletion region.

[0008] In the embodiment of the present application, a depletion region adjustment structure is provided in the photoelectric conversion device, and the depletion region adjustment structure is used to adjust the size of the depletion region, which helps to improve the performance of the photoelectric conversion device and also avoids the depletion region being too large to cause crosstalk with surrounding devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a schematic diagram of the structure of an avalanche photodiode.

[0010] Figure 2 It is a schematic diagram of crosstalk generated by photoelectric conversion devices.

[0011] Figure 3 It is a schematic diagram of the structure of a photoelectric conversion device provided in an embodiment of the present application.

[0012] Figure 4 It is a schematic diagram of the structure of another photoelectric conversion device provided in an embodiment of the present application.

[0013] Figure 5 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0014] Figure 6 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0015] Figure 7 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0016] Figure 8 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0017] Fig. 9 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0018] Fig.10 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0019] Fig.11 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0020] Fig.12 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0021] Fig.13 It is a structural schematic diagram of another photoelectric conversion device provided in an embodiment of the present application.

[0022] Fig.14 It is a schematic flow chart of a method for manufacturing a photoelectric conversion device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0024] The photoelectric conversion device of the embodiment of the present application can be a semiconductor device based on a PN junction. The PN junction is a unidirectional conductive device. Under the action of a forward voltage, the PN junction is in a conductive state; under the action of a reverse voltage, the PN junction is in a cut-off state, and can only pass a very weak reverse current. For a PN junction in a reverse biased state, when light irradiates the PN junction, the reverse current on the PN junction will increase rapidly. Based on this principle, the photoelectric conversion device of the embodiment of the present application can detect the optical signal by detecting the reverse current change or the external load voltage change. Of course, the photoelectric conversion device of the embodiment of the present application can also be a semiconductor device that only includes a P-type doping region or an N-type doping region. At this time, the doping type of the epitaxial layer in the photoelectric conversion device can correspond to the P-type doping region or the N-type doping region to form a depletion region. For example, when the photoelectric conversion device only includes a P-type doping region, the doping type of the epitaxial layer is N-type; when the photoelectric conversion device only includes an N-type doping region, the doping type of the epitaxial layer is P-type. For ease of understanding, the following describes the scheme of the embodiment of the present application by taking a photoelectric conversion device including a P-type doping region and an N-type doping region as an example.

[0025] There may be many types of photoelectric conversion devices in the embodiments of the present application. For example, according to the number of electrodes, the photoelectric conversion device may be a photodiode, a phototransistor, etc. For another example, according to the different photosensitive surfaces, the photoelectric conversion device may be a front-illuminated photoelectric conversion device or a back-illuminated photoelectric conversion device. For another example, according to the different detection principles, the photoelectric conversion device may be an avalanche photon diode (APD), a photomultiplier tube, an enhanced photodiode, etc.

[0026] Avalanche photodiodes have multiple working states, such as linear mode, Geiger mode, etc. Geiger mode avalanche photodiodes are often used for single photon detection due to their extremely high gain, and are also called single photon avalanche photodiodes (SPAD). Among them, single photon detection is a technology that can detect weak light, and its high sensitivity enables it to capture and sense single photons. Single photon detection technology is a key technology for detecting, analyzing and processing optical signals at the photon scale, and its scientific significance and application prospects are very broad.

[0027] Photoelectric conversion devices can be divided into two types: front-illuminated and back-illuminated. Each type has its own characteristics. The embodiment of the present application can be selected according to the usage scenario.

[0028] For a front-illuminated device structure, the metal wiring is located on the top surface of the device, and light is incident from the top surface of the device. The metal wiring located on the top surface will block the incident light, reducing the photon detection efficiency.

[0029] For a back-illuminated device structure, the metal traces are located on the top surface of the device, and the device is set upside down so that light is incident from the original back side of the device. The metal traces located on the top surface will not block the incident light, and the photon detection efficiency is relatively high.

[0030] Combine the following Figure 1 , taking avalanche photodiode as an example, the structure of photoelectric conversion devices is introduced.

[0031] Figure 1 The photoelectric conversion device 10 in the embodiment may include a first doping region 1 , a second doping region 2 , an epitaxial layer 3 and a substrate 8 .

[0032] The substrate 8 can be a semiconductor substrate. For example, the substrate 8 can be a silicon-based substrate, a germanium-based substrate, or a III-V substrate, such as an InP substrate. The substrate 8 can be a high-purity substrate, or a substrate doped with impurities, such as the substrate 8 can be a substrate doped with N-type impurities, or a substrate doped with P-type impurities. The doping concentration of the substrate 8 can be various, such as the substrate 8 can be a lightly doped substrate (such as a P-substrate, an N-substrate), a medium-doped substrate (such as a P substrate, an N substrate), or a heavily doped substrate (such as a P+ substrate, an N+ substrate). Wherein, +, - represent the doping concentration of the substrate.

[0033] The epitaxial layer 3 may be formed on the substrate 8. For example, for a heavily doped substrate, a lightly doped epitaxial layer may be grown on the heavily doped layer. It should be understood that in the semiconductor structure of some embodiments, there is no strict distinction between the substrate and the epitaxial layer grown thereon, and they may be collectively referred to as a substrate or semiconductor substrate.

[0034] The first doping region 1 and the second doping region 2 may be formed on the substrate 8 or the epitaxial layer 3 of the substrate 8. For example, in some embodiments, corresponding types of impurities may be doped into the epitaxial layer 3 by ion implantation or thermal diffusion to form the first doping region 1 and the second doping region 2 inside the epitaxial layer 3, the first doping region 1 is formed on the upper surface of the epitaxial layer 3 away from the substrate 8, and the second doping region 2 is formed below the first doping region 2, that is, the second doping region 2 is located between the first doping region 2 and the substrate 8. The first doping region 1 may be an N-type doping region or a P-type doping region, and the second doping region 2 may be a P-type doping region or an N-type doping region, and the first doping region 1 and the second doping region 2 have different doping types.

[0035] The first doping region 1 and the second doping region 2 can form a PN junction and form a depletion region 11 across the interface of the PN junction. In order to improve the photon detection efficiency, the material parameters of each structural region of the photoelectric conversion device, such as doping concentration, resistance value, etc., can be set so that the second doping region 2 of the photoelectric conversion device closer to the substrate 8 is close to full depletion. For example, setting the epitaxial layer 3 to have a higher resistance, such as above 100Ω·cm, can make the doping concentration of the epitaxial layer 3 relatively low, where the recombination probability of photogenerated carriers is lower, that is, more freely moving charges can enter the central avalanche region of the PN junction, thereby improving the PDE of the photoelectric conversion device 10. Optionally, in Figure 1 In the embodiment, the second doping region 2 is a P-type doping region, and the depletion region 11 indicates that the second doping region 2 is close to being fully depleted. It should be noted that the shape of the depletion region 11 is only an example and not a limitation, and the depletion region 11 may also be other shapes.

[0036] However, when the resistance of the epitaxial layer 3 is high, since the second doped region 2 is close to full depletion, a small jitter of the implanted dose energy during processing, or a small overvoltage bias during use, may cause the depletion region 11 of the photoelectric conversion device 10 to expand sharply, and the sharp expansion of the depletion region 11 will bring some negative effects to the photoelectric conversion device 10, affecting the performance of the photoelectric conversion device 10. For example, in the case where there is no isolation between adjacent pixels, the sharp expansion of the depletion region 11 may cause the depletion regions 11 of adjacent pixels to overlap, causing serious crosstalk. Figure 2 As shown, the depletion region 11 formed in the photoelectric conversion device 10 and the depletion region 21 formed in the photoelectric conversion device 20 overlap, causing serious crosstalk.

[0037] Introducing a deep trench isolation (DTI) or a shallow trench isolation (STI) at the side edge of the photoelectric conversion device 10 can isolate the device to a certain extent and reduce crosstalk. However, the introduction of DTI or STI also brings a large number of impurity defect states, which increases the dark noise of the device to a certain extent.

[0038] In summary, for photoelectric conversion devices based on high-resistance epitaxial layers, how to improve the performance of photoelectric conversion devices and avoid the rapid expansion of depletion regions and the resulting crosstalk to peripheral devices has become a technical problem that needs to be solved urgently.

[0039] Based on the above technical problems, the embodiment of the present application proposes a photoelectric conversion device, including: a semiconductor substrate; a P-type doping region and / or an N-type doping region, which is arranged in the semiconductor substrate, and the PN junction formed by the P-type doping region and the N-type doping region forms a corresponding depletion region; or the semiconductor substrate and the P-type doping region or the N-type doping region respectively form a PN junction to form a corresponding depletion region; a depletion region adjustment structure, which is arranged in the semiconductor substrate. The depletion region adjustment structure is used to adjust the size of the depletion region, which helps to improve the performance of the photoelectric conversion device. At the same time, it can also avoid the depletion region being too large to cause mutual crosstalk with surrounding devices.

[0040] Optionally, in some embodiments, the depletion region regulating structure includes a high-doping region, and the type of the high-doping region is the same as the doping type of the semiconductor substrate.

[0041] Optionally, in some embodiments, the highly doped region is formed on the side and / or bottom of the semiconductor substrate.

[0042] Optionally, in some embodiments, an isolation trench is provided on a side of the photoelectric conversion device, the isolation trench is filled with a substance with a fixed charge, and the depletion region adjustment structure includes the isolation trench filled with the substance with a fixed charge.

[0043] Optionally, in some embodiments, an isolation trench is provided on a side of the photoelectric conversion device, an adjustment electrode is buried in the isolation trench, and the depletion region adjustment structure includes the isolation trench in which the adjustment electrode is buried.

[0044] Optionally, in some embodiments, the relative height between the electric potential formed on the adjustment electrode and the electric potential in the semiconductor substrate near the isolation groove is related to the semiconductor type of the semiconductor substrate; if the semiconductor substrate is a P-type semiconductor, the electric potential formed on the adjustment electrode is smaller than the electric potential in the semiconductor substrate near the isolation groove; if the semiconductor substrate is an N-type semiconductor, the electric potential formed on the adjustment electrode is larger than the electric potential in the semiconductor substrate near the isolation groove.

[0045] Optionally, in some embodiments, the photoelectric conversion device is a front-illuminated structure or a back-illuminated structure.

[0046] Optionally, in some embodiments, the photoelectric conversion device is a back-illuminated structure, and the P-type doping region and / or the N-type doping region are formed on the lower surface of the semiconductor substrate.

[0047] Optionally, in some embodiments, the semiconductor substrate includes a silicon substrate on an insulator and an epitaxial layer grown on the silicon substrate on an insulator, the silicon substrate on an insulator includes a top silicon layer, an oxide layer and a bottom silicon layer stacked in sequence, the epitaxial layer is grown on the top silicon, and the high-doped region serving as the depletion region adjustment structure is obtained by highly doping the top silicon.

[0048] Optionally, in some embodiments, the high-doping region is a concentration gradient doping region whose doping concentration has a preset gradient change.

[0049] Optionally, in some embodiments, a dielectric layer is disposed on the upper surface of the semiconductor substrate, the dielectric layer carries a fixed charge, and the depletion region adjustment structure includes the dielectric layer carrying a fixed charge.

[0050] Optionally, in some embodiments, if the semiconductor substrate is a P-type semiconductor, the fixed charge is a negative charge; if the semiconductor substrate is an N-type semiconductor, the fixed charge is a positive charge.

[0051] Optionally, in some embodiments,

[0052] Optionally, in some embodiments, the resistivity of the semiconductor substrate is greater than a first threshold value, and the first threshold value is 50 Ω·cm or 100 Ω·cm.

[0053] Optionally, in some embodiments, the photoelectric conversion device is a single-photon avalanche photodiode.

[0054] Optionally, in some embodiments, the semiconductor substrate includes a substrate and an epitaxial layer grown thereon.

[0055] On this basis, an embodiment of the present application further provides a photoelectric sensing device, which includes the photoelectric conversion device as described above, and the photoelectric sensing device obtains relevant information by sensing an electrical signal generated in response to a light signal received by the photoelectric conversion device.

[0056] On this basis, an embodiment of the present application further provides an electronic device, which includes the photoelectric sensing device as described above, and the electronic device is used to perform corresponding functions according to the relevant information obtained by sensing the electrical signal by the photoelectric sensing device.

[0057] The present application is mainly described by taking a photoelectric conversion device based on the avalanche effect as an example. The photoelectric conversion device based on the avalanche effect may include a vacuum avalanche photodiode, an avalanche photodiode and a single-photon avalanche photodiode.

[0058] Combine the following Figure 3 , the structure of the photoelectric conversion device 10 according to the embodiment of the present application is described.

[0059] The epitaxial layer 3 is provided with an N-type doping region and a P-type doping region. The N-type doping region and the P-type doping region can be made by ion implantation or thermal diffusion. For example, the N-type doping region and the P-type doping region can be formed by implanting P-type ions and N-type ions on the substrate 8 or its epitaxial layer 3, respectively.

[0060] The epitaxial layer 3 may be a high resistance epitaxial layer. Optionally, the resistivity of the epitaxial layer 3 may be greater than a first threshold value. For example, the first threshold value may be 50 Ω·cm or 100 Ω·cm. For example, the resistivity of the epitaxial layer 3 may be 120 Ω·cm, 130 Ω·cm, 150 Ω·cm, 200 Ω·cm, 250 Ω·cm, 260 Ω·cm, 300 Ω·cm, 330 Ω·cm or 350 Ω·cm.

[0061] The N-type doping region and the P-type doping region may be arranged one above the other. For example, the N-type doping region may be located above the P-type doping region, or the P-type doping region may be located above the N-type doping region. Figures 3 to 12 In the corresponding embodiment, description is made by taking the N-type doping region 1 being located above the P-type doping region 2 as an example.

[0062] like Figure 3 As shown, the N-type doping region 1 and the P-type doping region 2 can form a depletion region 11 .

[0063] The depletion region adjustment structure 14 is disposed in the epitaxial layer 3. The depletion region adjustment structure 14 can be used to adjust the size of the depletion region 11 to prevent the depletion region 11 from expanding rapidly, which helps to improve the performance of the photoelectric conversion device 10. The depletion region adjustment structure 14 can be disposed on the side and / or bottom of the photoelectric conversion device 10, or it can be disposed inside the photoelectric conversion device 10 (for example, in the epitaxial layer 3). For example, the depletion region adjustment structure 14 can be disposed on part or all of the side of the photoelectric conversion device 10; or, it can also be disposed on the bottom of the photoelectric conversion device 10, or, as shown in FIG. Figure 3 As shown, the photoelectric conversion device 10 is provided on both the side and the bottom.

[0064] Optionally, a substrate 8 may be further disposed at the bottom of the photoelectric conversion device 10 , and the depletion region adjustment structure 14 may be disposed on the substrate 8 .

[0065] In some embodiments, for example, Figure 4 As shown, the photoelectric conversion device 10 may include a semiconductor substrate 8 and an epitaxial layer 3 of the semiconductor substrate 8, wherein a first doping region 1 is formed on the semiconductor surface of the epitaxial layer 3 facing away from the semiconductor substrate 8, and a second doping region 2 is formed below the first doping region 1, that is, the second doping region 2 is located between the first doping region 1 and the substrate 8. Among them, the first doping region 1 is an N-type doping region 1, and the doping concentration of the first doping region 1 is higher than the doping concentration of the epitaxial layer 3, and can be regarded as having a medium doping concentration. The second doping region 2 is a P-type doping region 2, and the doping concentration of the second doping region 2 is higher than the doping concentration of the epitaxial layer 3, which can be equivalent to or slightly higher than the doping concentration of the first doping region 1, and can also be regarded as having a medium doping concentration. The N-type first doping region 1 and the P-type second doping region 2 contact each other to form a PN junction. The depletion region adjustment structure 14 can be arranged on the side of the photoelectric conversion device 10.

[0066] Optionally, the depletion region regulating structure 14 may include a high-doped region, the semiconductor type of the high-doped region is the same as that of the substrate 8 or the epitaxial layer 3 of the substrate 8, and the high-doped region has a higher doping concentration than the epitaxial layer 3. For example, a P-type high-doped region may be formed at the side edge of the photoelectric conversion device 10 by ion implantation or plasma doping as the depletion region regulating structure 14, and the high-doped region may limit the expansion of the depletion region 11.

[0067] The photoelectric conversion device 10 may further include one or more first heavily doped regions 6 formed on the first doped region 1, wherein the first heavily doped region 6 has the same semiconductor type as the first doped region 1 and a higher doping concentration than the first doped region 1. Figure 4As shown, the first heavily doped region 6 is an N-type heavily doped region, formed in the N-type first doped region 1. Optionally, the first heavily doped region 6 may form a ring region around the center of the N-type first doped region 1. Electrodes of corresponding types on the photoelectric conversion device 10 may be led out of the first heavily doped region 6, for example, the cathode of the photoelectric conversion device 10 may be led out of the N-type first heavily doped region 6, and the anode of the photoelectric conversion device 10 may be led out of the P-type first heavily doped region 6. Figure 4 In the illustrated embodiment, a cathode of the photoelectric conversion device 10 is led out from the N-type first heavily doped region 6 .

[0068] The photoelectric conversion device 10 may further include a well region 4, which is formed on the semiconductor surface of the semiconductor substrate 8 or its epitaxial layer 3 facing away from the bottom surface of the semiconductor substrate 8 and extends to a preset depth toward the bottom surface of the substrate 8. The well region 4 may be an annular region surrounding the PN junction formed by the entire first doping region 1 and the second doping region 2. The semiconductor type of the well region 4 is the same as that of the substrate 8 or its epitaxial layer 3, and the doping concentration of the well region 4 is higher than the doping concentration of the portion of the substrate 8 or the epitaxial layer 3 of the substrate 8 in contact with it. Figure 4 As shown, the well region 4 is a P-type well region 4 of the same type as the epitaxial layer 3. The well region 4 can be used to lead out the electrode to reduce the on-resistance of the electrode.

[0069] The photoelectric conversion device 10 may further include one or more second heavily doped regions 5 formed on the well region 4, wherein the second heavily doped regions 5 have the same semiconductor type as the well region 4 and a higher doping concentration than the well region 4. Figure 4 As shown, the second heavily doped region 5 is a P-type heavily doped region, formed in the P-type well region 4, and can also be a ring-shaped region surrounding the PN junction formed by the entire first doped region 1 and the second doped region 2. Electrodes of corresponding types on the photoelectric conversion device 10 can be led out of the second heavily doped region 5, for example: the cathode of the photoelectric conversion device 10 can be led out of the N-type second heavily doped region 5, and the anode of the photoelectric conversion device 10 can be led out of the P-type second heavily doped region 5. Figure 4 In the illustrated embodiment, an anode of the photoelectric conversion device 10 is led out from the P-type second heavily doped region 5 .

[0070] like Figure 4 As shown, the first doping region 1 is an N-type doping region, the second doping region 2, the substrate 8 and its epitaxial layer 3 are P-type doping regions, and correspondingly, the depletion region adjustment structure 14 includes a P-type high doping region. It should be understood that in other embodiments, if the first doping region 1 is a P-type doping region, the second doping region 2, the substrate 8 and its epitaxial layer 3 are N-type doping regions, then the depletion region adjustment structure 14 corresponds to an N-type high doping region. It should be understood that in Figure 4In the embodiment shown, the photoelectric conversion device 10 is not provided with an isolation structure. In this case, the high-doped region as the depletion region adjustment structure 14 can be arranged at the outermost side of the photoelectric conversion device 10, and can penetrate from the upper surface of the epitaxial layer 3 away from the substrate 8 to the substrate 8. The well region 4 can be arranged on the side of the depletion region adjustment structure 14 close to the first doping region 1 and the second doping region 2, that is, the well region 4 is located between the depletion region adjustment structure 14 and the first doping region 1 and the second doping region 2. Optionally, as Figure 4 As shown, the depth of the well region 4 extending from the upper surface of the epitaxial layer 3 away from the substrate 8 into the epitaxial layer 3 may be less than the depth of the depletion region adjusting structure 14 .

[0071] Optionally, in some embodiments, the high-doped region as the depletion region adjustment structure 14 may be a concentration gradient doped region. The concentration gradient doped region may refer to: the doping concentration in the depletion region adjustment structure 14 has a preset gradient change, for example: the doping concentration may gradually decrease from the edge (such as the side and / or the bottom) of the photoelectric conversion device 10 to the center of the photoelectric conversion device 10. The concentration gradient doped region helps the photogenerated carriers drift to the central region with high resistance and low concentration, thereby improving the performance of the photoelectric conversion device 10.

[0072] Further, the depletion region adjustment structure 14 may be: a concentration gradient doped region having a certain width in the horizontal direction (i.e., in the direction perpendicular to the side wall of the photoelectric conversion device 10) and / or in the vertical direction (i.e., in the direction perpendicular to the bottom of the photoelectric conversion device 10). Since the high-doped region (in the horizontal direction and / or in the vertical direction) has a certain width, the size of the depletion region can be further reduced, thereby reducing the breakdown voltage of the photoelectric conversion device 10. The width of the concentration gradient doped region can be designed according to actual needs.

[0073] like Figure 5 and Figure 6 As shown, in some embodiments, the side of the photoelectric conversion device 10 may be provided with an isolation groove 7, and the isolation groove 7 may be filled with an insulating oxide, such as silicon dioxide. Figure 5 and Figure 6 The isolation trench 7 shown may be a deep trench isolation (DTI); or, the isolation trench 7 may be a shadow trench isolation (STI).

[0074] like Figure 5 As shown, before the isolation trench 7 is filled with oxide, a P-type high-doped region serving as the depletion region adjustment structure 14 can be formed by performing angled ion implantation on the region near the epitaxial layer 3 in the isolation trench 7; or, as shown in FIG. Figure 6As shown, before the isolation groove 7 is filled with oxide, a P-type high-doped region serving as a depletion region adjustment structure 14 can be formed by plasma doping the region near the epitaxial layer 3 in the isolation groove 7. The P-type high-doped region serving as the depletion region adjustment structure 14 can not only limit the excessive expansion of the depletion region 11, but also play a certain passivation role for the defect state on the surface of the isolation groove 7, thereby reducing the dark noise generated after the isolation groove 7 is introduced. It should be understood that in the embodiment in which the photoelectric conversion device is provided with the isolation groove 7, as shown in FIG. Figure 5 and Figure 6 As shown, the isolation groove 7 is arranged at the outermost side of the photoelectric conversion device 10, and in this case, the depletion region adjustment structure 14 is arranged on the side of the isolation groove 7 located inside the photoelectric conversion device 10. That is, the depletion region adjustment structure 14 is located between the PN junction formed by the isolation groove 7 and the first doping region 1 and the second doping region 2. If the photoelectric conversion device 10 in this case also includes a well region 4, the well region 4 can be arranged on the side of the depletion region adjustment structure 14 located inside the photoelectric conversion device 10, that is, the edge portion of the photoelectric conversion device 10 is the isolation groove 7, the depletion region adjustment structure 14 and the well region 4 from the outside to the inside.

[0075] exist Figures 4 to 6 In the illustrated embodiment, the highly doped regions serving as the depletion region adjustment structure 14 are all disposed on the side surfaces of the photoelectric conversion device 10, for example, the left side, the right side and / or all four sides. It should be noted that in the embodiment of the present application, the highly doped regions serving as the depletion region adjustment structure may also be disposed on one side of the photoelectric conversion device 10, or, may also be disposed inside the photoelectric conversion device 10.

[0076] Optionally, in some embodiments, an isolation groove may be provided on the side of the photoelectric conversion device, and the isolation groove may be filled with an oxide with a fixed charge. In this case, the depletion region adjustment structure may include an isolation groove filled with an oxide with a fixed charge. The oxide with a fixed charge may attract charges with a polarity opposite to the fixed charge on the side of the isolation groove located inside the photoelectric conversion device to form a charge accumulation region. The charge accumulation region may achieve an effect similar to a highly doped region at the side edge of the photoelectric conversion device, thereby limiting excessive expansion of the depletion region and reducing the dark noise caused by the isolation groove.

[0077] Optionally, the isolation trench may be filled with an insulating oxide with a fixed charge, such as Al2O3, HfO2, etc.

[0078] Specifically, Figure 7As shown, the photoelectric conversion device 10 may include an N-type first doping region 1 and a P-type second doping region 2, the first doping region 1 is located above the second doping region 2, the first doping region 1 and the second doping region 2 are in contact with each other to form a PN junction, and the epitaxial layer 3 of the substrate 8 is a P-type doping region. An isolation groove 7 may be provided at the outer edge of the photoelectric conversion device 10, and the isolation groove 7 is filled with an oxide with a negative fixed charge. In order to balance the potential, the oxide with a negative fixed charge will accumulate holes on the side of the isolation groove 7 close to the epitaxial layer 3 to shield the negative charge to achieve electrostatic balance. As a result, the hole accumulation region formed at the surface of the isolation groove 7 on the side of the epitaxial layer 3 can achieve an effect similar to that of a high-doping region, can limit the excessive expansion of the depletion region 11 to reduce the breakdown voltage, and can also reduce the dark noise generated after the isolation groove 7 is introduced.

[0079] It should be noted that the polarity of the fixed charge may be related to the type of the substrate, the epitaxial layer of the substrate, or the doped region located below the PN junction. For example, if the doping type of the epitaxial layer is P-type and the doped region located below the PN junction is P-type, the isolation groove may be filled with a substance with a negative fixed charge; if the doping type of the epitaxial layer is N-type and the doped region located below the PN junction is N-type, the isolation groove may be filled with a substance with a positive fixed charge.

[0080] Optionally, in some embodiments, an adjustment electrode may be buried in the isolation groove disposed on the side of the photoelectric conversion device, and the adjustment electrode may be made of a conductive material, such as metal. In this case, the depletion region adjustment structure may include an isolation groove in which the adjustment electrode is buried, and a preset bias voltage may be applied between the adjustment electrode and the electrode derived from the well region to attract charges of a corresponding type on one side of the isolation groove located inside the photoelectric conversion device to form a charge accumulation region, and the charge accumulation region may form an effect similar to a high-doping region at the side edge of the photoelectric conversion device, thereby limiting the excessive expansion of the depletion region and reducing the dark noise caused by the isolation groove.

[0081] Specifically, Figure 8As shown, the photoelectric conversion device 10 may include an N-type first doping region 1 and a P-type second doping region 2, the first doping region 1 is located above the second doping region 2, the first doping region 1 and the second doping region 2 are in contact with each other to form a PN junction, and the epitaxial layer 3 of the substrate 8 is a P-type doping region. An isolation groove 7 may be provided at the outer edge of the photoelectric conversion device 10, and an adjustment electrode 12 is buried in the isolation groove 7 as a depletion region adjustment structure 14. A bias voltage lower than the potential at the electrode drawn from the well region 4 may be applied to the adjustment electrode 12, so that the potential of the adjustment electrode 12 is lower than the potential near the isolation groove 7 in the epitaxial layer 3. In order to balance the potential, the potential difference between the adjustment electrode 12 and the electrode drawn from the well region 4 will accumulate holes on the side of the isolation groove 7 near the epitaxial layer 3 to achieve electrostatic balance. As a result, the hole accumulation region formed at the surface of the isolation groove 7 on the side of the epitaxial layer 3 can achieve an effect similar to that of a high-doping region, limit the excessive expansion of the depletion region 11 and reduce the dark noise caused by the introduction of the isolation groove 7.

[0082] It should be noted that the voltage applied to the adjustment electrode in the isolation trench may be related to the semiconductor type of the doped region, substrate or epitaxial layer of the substrate located below the PN junction. Figure 8 As shown, if the doping type of the epitaxial layer 3 is P-type, and the second doping region 2 located below in the PN junction is P-type, the voltage applied to the adjustment electrode 12 is less than the voltage applied to the electrode near the isolation groove 7 in the epitaxial layer 3, for example, the electrode drawn from the well region 4. In this case, the potential formed on the adjustment electrode 12 is lower than the potential near the isolation groove 7 in the epitaxial layer 3, so as to form a hole accumulation region on the side of the isolation groove 7 close to the epitaxial layer 3 to limit the excessive expansion of the depletion region 11, and reduce the dark noise caused by the isolation groove. For another example, in other embodiments, if the doping type of the epitaxial layer 3 is N-type, and the second doping region 2 located below in the PN junction is N-type, the voltage applied to the adjustment electrode 12 is greater than the voltage applied to the electrode near the isolation groove 7 in the epitaxial layer 3, for example, the electrode drawn from the well region 4. Accordingly, the potential formed on the adjustment electrode 12 is higher than the potential in the epitaxial layer 3 near the isolation groove 7, so as to form an electron accumulation region on the side of the isolation groove 7 close to the epitaxial layer 3 to limit the excessive expansion of the depletion region and reduce the dark noise caused by the isolation groove 7.

[0083] It should be understood that in some embodiments, the photoelectric conversion device is a frontside illuminated (FSI) structure. In the FSI structure, the substrate region has a higher doping concentration than the epitaxial layer of the substrate. Therefore, for the photoelectric conversion device of the FSI structure, the substrate itself can serve as a high-doping region of the depletion region adjustment structure.

[0084] Optionally, in some embodiments, the photoelectric conversion device may be a backside illuminated (BSI) structure. Since the substrate is reversed during the manufacturing process of the BSI photoelectric conversion device so that the substrate faces upward as the upper surface of the BSI photoelectric conversion device for receiving optical signals, and the substrate needs to be thinned, the thinning process will cause the substrate at the top of the BSI photoelectric conversion device to not have a high-doping area. Therefore, compared with the FSI photoelectric conversion device, the BSI photoelectric conversion device needs to be highly doped on the substrate after the thinning process.

[0085] For example, Fig. 9 As shown, the photoelectric conversion device is a BSI structure, which may include a substrate 8, an epitaxial layer 3 of the substrate 8, and a PN junction formed by the contact between an N-type first doping region 1 and a P-type second doping region 2. Among them, the substrate 8 and its epitaxial layer 3 are P-type semiconductors, the substrate 8 is arranged upward to form the top of the BSI photoelectric conversion device 10, the first doping region 1 and the second doping region 2 are formed in the epitaxial layer 3 of the substrate 8, the N-type first doping region 1 is formed on the lower surface of the epitaxial layer 3 facing away from the substrate 8, and the P-type second doping region 2 is formed above the N-type first doping region 1. For such a BSI photoelectric conversion device, a P-type high doping region can be formed on the substrate 8 or the epitaxial layer 3 of the substrate 8 as the top setting as a depletion region adjustment structure by multiple ion implantation or plasma doping.

[0086] like Fig.10 As shown, optionally, for the photoelectric conversion device 10 with a BSI structure, a highly doped region serving as a depletion region regulating structure can also be formed on the thinned substrate 8 or the epitaxial layer 3 of the substrate 8 by a low-temperature molecular beam epitaxial growth method.

[0087] Optionally, the high-doped region formed as the depletion region adjustment structure may have a variable doping concentration gradient along the vertical direction, for example, the high-doped region of the substrate 8 formed as the depletion region adjustment structure may have a gradient change in doping concentration by controlling the concentration of the doped ions or controlling the growth conditions, and the doping concentration may gradually decrease from the edge (such as the side, bottom and / or top) of the photoelectric conversion device 10 to the center of the photoelectric conversion device 10. The gradient change of the doping concentration in the high-doped region as the depletion region adjustment structure helps the photogenerated carriers drift to the central region with high resistance and low concentration, thereby improving the performance of the photoelectric conversion device 10.

[0088] like Fig.11As shown, in some embodiments, the depletion region adjustment structure may also include a dielectric layer 13 with fixed charges disposed on the upper surface of the BSI photoelectric conversion device 10, that is, the outer surface of the substrate 8 or the epitaxial layer 3 of the substrate 8 located on the top of the BSI photoelectric conversion device 10. In this case, the dielectric layer 13 can attract charges with opposite polarity to the fixed charges carried by the dielectric layer 13 at a position close to the dielectric layer 13 in the epitaxial layer 3 to form a charge accumulation region, and the charge accumulation region can achieve an effect similar to a high-doping region at the edge of the photoelectric conversion device 10, and can limit the excessive expansion of the depletion region. Optionally, the material of the dielectric layer can be an insulating oxide.

[0089] It should be noted that the polarity of the fixed charge carried by the dielectric layer 13 is related to the doping type of the substrate 8, the epitaxial layer 3 of the substrate 8 or the second doping region in the PN junction. Fig.11 As shown, the substrate 8 or the epitaxial layer 3 of the substrate 8 is P-type doped, and the second doping region 2 of the PN junction is also P-type, then the dielectric layer 13 carries a negative fixed charge, and the dielectric layer 13 accumulates holes at a position close to the dielectric layer 13 in the epitaxial layer 3 to form a hole accumulation region to limit the excessive expansion of the depletion region 11. In other embodiments, if the substrate or the epitaxial layer of the substrate is N-type doped, and the second doping region of the PN junction is also N-type, then the dielectric layer carries a positive fixed charge, and the dielectric layer accumulates electrons at a position close to the dielectric layer in the epitaxial layer to form an electron accumulation region to limit the excessive expansion of the depletion region.

[0090] Optionally, in some embodiments, the substrate of the BSI photoelectric conversion device may be a silicon on insulator (SOI) substrate. In this case, the highly doped region serving as the depletion region adjustment structure may be obtained by highly doping the top silicon in the SOI substrate.

[0091] For example, Fig.12 As shown, the SOI substrate 8 may include three layers stacked in sequence: a top silicon 83, an oxide layer 82, and a bottom silicon 81. The top silicon 83 may be ion implanted to form a P-type highly doped region as the depletion region regulating structure 14. Subsequently, an epitaxial layer 3 may be grown on the top silicon 83 of the SOI substrate 8, and other semiconductor structures of the BSI optoelectronic device may be formed on this basis. In this case, when the BSI optoelectronic conversion device is inverted and the SOT substrate 8 is thinned, the P-type highly doped region serving as the depletion region regulating structure 14 will be retained due to the presence of the oxide layer 82. During the growth of the epitaxial layer 3, the growth and annealing process will cause the acceptor atoms in the P-type highly doped region in the SOI substrate to diffuse, thereby forming a P-type concentration gradient doped region.

[0092] It should be understood that, similar to the above embodiments, the doping type of the high doping region formed on the SOI substrate as a depletion region adjustment structure may also be the same as the doping region type of the second doping region in the substrate, the epitaxial layer of the substrate or the PN junction.

[0093] Optionally, when the photoelectric conversion device is a back-illuminated device, the highly doped region serving as the depletion region regulating structure may also be disposed at other locations on the side or inside the photoelectric conversion device with reference to the above embodiments.

[0094] The above embodiments can also be combined, and the depletion region adjustment structure can be realized by superposition of the above methods. For example, ion implantation, oxide with fixed charge can be filled in the isolation groove, and adjustment electrode can be buried in the isolation groove and corresponding voltage can be applied. In addition, the structure and type of the photoelectric conversion device are not limited to those described in the above embodiments. The substrate type, implantation type, epitaxial layer type, device structure, etc. can be changed. At the same time, according to the change of the device, the type of edge and bottom doping regions also changes accordingly.

[0095] Optionally, in some embodiments, the photoelectric conversion device may also include only a P-type doping region or an N-type doping region, for example, Fig.13 As shown, the photoelectric conversion device 10 may include a substrate 8, an epitaxial layer 3 formed on the substrate 8, and a first doping region 1. The first doping region 1 is formed on the upper surface of the epitaxial layer 3 facing away from the substrate 8. The first doping region 1 may be a P-type doping region or an N-type doping region. The type of the first doping region 1 may be opposite to the doping type of the epitaxial layer 3. For example, when the first doping region 1 is a P-type doping region, the doping type of the epitaxial layer 3 is N-type; when the first doping region 1 is an N-type doping region, the doping type of the epitaxial layer 3 is P-type. Thus, the PN junction formed by the first doping region 1 and the epitaxial layer 3 may form a depletion region 11.

[0096] Fig.13 The photoelectric conversion device 10 in the embodiment may further include a depletion region adjustment structure 14, which is disposed in the epitaxial layer 3. The depletion region adjustment structure 14 may be used to adjust the size of the depletion region 11 to prevent the depletion region 11 from being excessively enlarged, thereby helping to improve the performance of the photoelectric conversion device 10. The depletion region adjustment structure 14 may be disposed on the side of the photoelectric conversion device 10; or, it may also be disposed on the bottom of the photoelectric conversion device 10; or, it may also be disposed on the bottom of the epitaxial layer 3. Fig.13 As shown, the photoelectric conversion device 10 is provided on both the side and the bottom.

[0097] Optionally, the depletion region regulating structure 14 may include a high-doped region, and the type of the high-doped region may be the same as the type of the epitaxial layer 3. Fig.13In the embodiment shown, the high doping region can be a P-type high doping region, and the doping type of the epitaxial layer 3 can also be P-type. In other embodiments, the doping type of the epitaxial layer 3 can also be N-type, and the high doping region can be an N-type high doping region.

[0098] Optionally, an isolation groove may be provided on the side of the photoelectric conversion device 10, and the depletion layer adjustment structure may include an isolation groove filled with an oxide with a fixed charge. In this case, the depletion region adjustment structure 14 may form a hole accumulation region or an electron accumulation region in the epitaxial layer 3 through the fixed charge carried to limit the excessive expansion of the depletion region 11. The polarity of the fixed charge carried by the depletion region adjustment structure 14 may be related to the doping type of the epitaxial layer 3. For example, if the doping type of the epitaxial layer 3 is P-type, the isolation groove may be filled with a substance with a negative fixed charge; if the doping type of the epitaxial layer 3 is N-type, the isolation groove may be filled with a substance with a positive fixed charge.

[0099] Optionally, an isolation trench may be provided on the side of the photoelectric conversion device 10, and the depletion region adjustment structure 14 may include an isolation trench in which an adjustment electrode is buried.

[0100] Optionally, the photoelectric conversion device 10 may be a back-illuminated device, and the depletion region adjustment structure 14 may include a high-doped region, which may be formed on a substrate located on top of the photoelectric conversion device or on an epitaxial layer 3 of the substrate. The semiconductor type of the high-doped region may be the same as that of the epitaxial layer 3.

[0101] It should be noted that Fig.13 The specific implementation of the photoelectric conversion device 10 can refer to the above Figures 3 to 12 The various embodiments in the description will not be repeated here.

[0102] It should be understood that, in order to unify the description of photoelectric conversion devices of different structures, the surface of the photoelectric conversion device that receives the optical signal can be defined as the upper surface of the photoelectric conversion device, the surface of the photoelectric conversion device facing away from the upper surface can be defined as the lower surface, and the side surface connecting the upper surface and the lower surface can be defined as the side surface of the photoelectric conversion device. Thus, for the photoelectric conversion device of FSI structure, the N-type doping region and / or P-type doping region used to form the avalanche zone PN junction are arranged in the top area of ​​the substrate or the substrate epitaxial layer as the upper surface of the photoelectric conversion device; for the photoelectric conversion device of BSI structure, the N-type doping region and / or P-type doping region used to form the avalanche zone PN junction are arranged in the bottom area of ​​the substrate or the substrate epitaxial layer as the lower surface of the photoelectric conversion device.

[0103] The embodiment of the present application also provides a photoelectric sensing device, which may include any of the photoelectric conversion devices described above, and the photoelectric sensing device may obtain relevant information by sensing the electrical signal generated by the photoelectric conversion device in response to the received light signal. For example, the photoelectric sensing device may include a transmitting module, a receiving module and a processing circuit, the transmitting module transmits a sensing light signal, the receiving module includes the photoelectric conversion device to sense the sensing light signal reflected by the external object and output a corresponding electrical signal, and the processing circuit obtains the distance information of the external object by processing and analyzing the output electrical signal. The photoelectric sensing device may include a plurality of photoelectric conversion devices arranged in an array. The photoelectric sensing device may be a sensing chip or a sensing circuit, for example, a proximity sensor, a time of flight (ToF) sensor, a laser radar, etc.

[0104] An embodiment of the present application also provides an electronic device, which may include the photoelectric sensing device described above, and the electronic device may execute corresponding functions based on relevant information obtained by sensing electrical signals by the photoelectric sensing device.

[0105] The corresponding functions include but are not limited to any one or more of unlocking, payment, launching preset applications, obstacle avoidance, and judging the user's emotions and health status by using deep learning technology after recognizing the user's facial expression.

[0106] The electronic device may be, for example but not limited to, suitable electronic products such as consumer electronic products, household electronic products, smart mobile tools, and financial terminal products. Among them, consumer electronic products may be, for example but not limited to, mobile phones, tablet computers, laptop computers, desktop monitors, all-in-one computers, etc. Household electronic products may be, for example but not limited to, smart door locks, televisions, refrigerators, wearable devices, etc. Smart mobile tools may be, for example but not limited to, cars, robots, unmanned delivery vehicles, etc. Financial terminal products may be, for example but not limited to, ATMs, self-service terminals, etc.

[0107] Combination of the above Figures 1 to 13 , describes in detail the device embodiment of the present application, and the following is combined with Fig.14 , the method embodiment of the present application is described in detail. It should be understood that the description of the device embodiment corresponds to the description of the method embodiment, so the parts not described in detail can refer to the previous device embodiment.

[0108] Fig.14 It is a schematic flow chart of a method for manufacturing a photoelectric conversion device provided in the present application, and the method includes steps S110 to S130.

[0109] S110, providing a substrate or an epitaxial layer grown on the substrate;

[0110] S120, forming a first doped region and / or a second doped region on the substrate or the epitaxial layer of the substrate, wherein the first doped region and the second doped region have different doping types and contact each other to form a PN junction and a depletion region spanning two sides of the PN junction interface;

[0111] S130, a depletion region adjustment structure is provided in the substrate or the epitaxial layer of the substrate, wherein the depletion region adjustment structure is used to adjust the size of the depletion region to avoid excessive expansion of the depletion region. The formation position, specific structure, formation method, etc. of the depletion region adjustment structure can refer to the description of the above embodiments, and will not be repeated here.

[0112] Optionally, in some embodiments, the photoelectric conversion device is a single-photon avalanche photodiode.

[0113] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A photoelectric conversion device, characterized in that: include: Semiconductor substrates; A P-type doping region and / or an N-type doping region are disposed in the semiconductor substrate, and a PN junction formed by the P-type doping region and the N-type doping region forms a corresponding depletion region; or a PN junction formed by the semiconductor substrate and the P-type doping region or the N-type doping region respectively forms a corresponding depletion region, and the photoelectric conversion device is a back-illuminated structure, and the P-type doping region and / or the N-type doping region are formed on the lower surface of the semiconductor substrate; and A depletion region regulating structure is arranged in the semiconductor substrate and is used to limit the expansion of the depletion region. The semiconductor substrate includes a silicon substrate on an insulator and an epitaxial layer grown on the silicon substrate on the insulator. The silicon substrate on the insulator includes a top silicon layer, an oxide layer and a bottom silicon layer stacked in sequence. The epitaxial layer is grown on the top silicon layer and is obtained by highly doping the top silicon layer as a highly doped region of the depletion region regulating structure.

2. The photoelectric conversion device according to claim 1, characterized in that: The high-doping region is a concentration gradient doping region whose doping concentration has a preset gradient change.

3. The photoelectric conversion device according to claim 2, characterized in that: A dielectric layer is disposed on the upper surface of the semiconductor substrate, and the dielectric layer carries fixed charges. The depletion region regulating structure also includes the dielectric layer carrying fixed charges.

4. The photoelectric conversion device according to claim 3, characterized in that: If the semiconductor substrate is a P-type semiconductor, the fixed charge is a negative charge; if the semiconductor substrate is an N-type semiconductor, the fixed charge is a positive charge.

5. The photoelectric conversion device according to claim 1, characterized in that: The resistivity of the semiconductor substrate is greater than a first threshold value, and the first threshold value is 50 Ω·cm or 100 Ω·cm.

6. The photoelectric conversion device according to claim 1, characterized in that: The photoelectric conversion device is a single-photon avalanche photodiode.

7. The photoelectric conversion device according to claim 1, characterized in that: The semiconductor substrate comprises a substrate and an epitaxial layer grown thereon.

8. A photoelectric sensing device, characterized in that: The photoelectric conversion device comprises a photoelectric conversion device as claimed in any one of claims 1 to 7, wherein the photoelectric sensing device obtains relevant information by sensing an electrical signal generated in response to a light signal received by the photoelectric conversion device.

9. An electronic device, characterized in that: The electronic device comprises the photoelectric sensing device as claimed in claim 8, and is used to execute corresponding functions according to the relevant information obtained by sensing the electrical signal by the photoelectric sensing device.

10. A method for manufacturing a photoelectric conversion device, characterized in that: include: Providing a semiconductor substrate; A P-type doping region and / or an N-type doping region is formed on the semiconductor substrate, and a PN junction formed by the P-type doping region and the N-type doping region forms a corresponding depletion region; or a PN junction formed by the semiconductor substrate and the P-type doping region or the N-type doping region respectively forms a corresponding depletion region; The semiconductor substrate includes a silicon substrate on an insulator, and the silicon substrate on an insulator includes a top silicon layer, an oxide layer and a bottom silicon layer stacked in sequence. An epitaxial layer is grown on the top silicon, and the top silicon is highly doped to form a highly doped region as a depletion region regulating structure, and the depletion region regulating structure is used to limit the expansion of the depletion region.

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